TWI800686B - 對用於電漿處理之電漿源進行改善及穩定性監測的方法 - Google Patents

對用於電漿處理之電漿源進行改善及穩定性監測的方法 Download PDF

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Publication number
TWI800686B
TWI800686B TW108134358A TW108134358A TWI800686B TW I800686 B TWI800686 B TW I800686B TW 108134358 A TW108134358 A TW 108134358A TW 108134358 A TW108134358 A TW 108134358A TW I800686 B TWI800686 B TW I800686B
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TW
Taiwan
Prior art keywords
plasma
methods
stability monitoring
plasma processing
sources
Prior art date
Application number
TW108134358A
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English (en)
Other versions
TW202023326A (zh
Inventor
吉田祐介
傑生 馬里昂
謝爾蓋 沃羅寧
艾洛克 蘭傑
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202023326A publication Critical patent/TW202023326A/zh
Application granted granted Critical
Publication of TWI800686B publication Critical patent/TWI800686B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2441—Semiconductor detectors, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
TW108134358A 2018-09-27 2019-09-24 對用於電漿處理之電漿源進行改善及穩定性監測的方法 TWI800686B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862737242P 2018-09-27 2018-09-27
US62/737,242 2018-09-27
US201862741406P 2018-10-04 2018-10-04
US62/741,406 2018-10-04

Publications (2)

Publication Number Publication Date
TW202023326A TW202023326A (zh) 2020-06-16
TWI800686B true TWI800686B (zh) 2023-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108134358A TWI800686B (zh) 2018-09-27 2019-09-24 對用於電漿處理之電漿源進行改善及穩定性監測的方法

Country Status (3)

Country Link
US (1) US10818482B2 (zh)
KR (1) KR102533948B1 (zh)
TW (1) TWI800686B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102477054B1 (ko) 2020-03-24 2022-12-14 주식회사 바이오앱 웅취 제거용 재조합 단백질 및 이를 포함하는 백신 조성물
US20220392785A1 (en) * 2021-06-07 2022-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Small gas flow monitoring of dry etcher by oes signal
KR20240031344A (ko) * 2021-07-02 2024-03-07 램 리써치 코포레이션 플라즈마 조건들의 이미지 분석

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762849B1 (en) * 2002-06-19 2004-07-13 Novellus Systems, Inc. Method for in-situ film thickness measurement and its use for in-situ control of deposited film thickness
US20050070104A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Method and processing system for monitoring status of system components
US8460945B2 (en) * 2003-09-30 2013-06-11 Tokyo Electron Limited Method for monitoring status of system components
TW201618225A (zh) * 2014-07-25 2016-05-16 東京威力科創股份有限公司 晶圓夾持用靜電夾頭充電控制方法及設備

Family Cites Families (9)

* Cited by examiner, † Cited by third party
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JP3485896B2 (ja) * 2000-07-11 2004-01-13 東京エレクトロン株式会社 プラズマ処理装置
US6633391B1 (en) * 2000-11-07 2003-10-14 Applied Materials, Inc Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy
JP2006186222A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
US20180298488A1 (en) * 2014-09-22 2018-10-18 Hitachi Kokusai Electric Inc. Film formation apparatus and film formation method
US10651017B2 (en) * 2016-06-30 2020-05-12 Tokyo Electron Limited Method for operation instability detection in a surface wave plasma source
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US10748797B2 (en) * 2017-01-18 2020-08-18 Applied Materials, Inc. Plasma parameters and skew characterization by high speed imaging
KR102149644B1 (ko) * 2017-08-14 2020-08-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법, 플라스마 생성부, 프로그램, 플라스마 생성 방법, 전극 및 반응관
US10916411B2 (en) * 2018-08-13 2021-02-09 Tokyo Electron Limited Sensor-to-sensor matching methods for chamber matching

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762849B1 (en) * 2002-06-19 2004-07-13 Novellus Systems, Inc. Method for in-situ film thickness measurement and its use for in-situ control of deposited film thickness
US20050070104A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Method and processing system for monitoring status of system components
US8460945B2 (en) * 2003-09-30 2013-06-11 Tokyo Electron Limited Method for monitoring status of system components
TW201618225A (zh) * 2014-07-25 2016-05-16 東京威力科創股份有限公司 晶圓夾持用靜電夾頭充電控制方法及設備

Also Published As

Publication number Publication date
KR20200035897A (ko) 2020-04-06
TW202023326A (zh) 2020-06-16
US10818482B2 (en) 2020-10-27
US20200105510A1 (en) 2020-04-02
KR102533948B1 (ko) 2023-05-17

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