TWI800382B - 開關元件 - Google Patents
開關元件 Download PDFInfo
- Publication number
- TWI800382B TWI800382B TW111118807A TW111118807A TWI800382B TW I800382 B TWI800382 B TW I800382B TW 111118807 A TW111118807 A TW 111118807A TW 111118807 A TW111118807 A TW 111118807A TW I800382 B TWI800382 B TW I800382B
- Authority
- TW
- Taiwan
- Prior art keywords
- switch device
- switch
- Prior art date
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111118807A TWI800382B (zh) | 2021-04-21 | 2021-04-21 | 開關元件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111118807A TWI800382B (zh) | 2021-04-21 | 2021-04-21 | 開關元件 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202243205A TW202243205A (zh) | 2022-11-01 |
TWI800382B true TWI800382B (zh) | 2023-04-21 |
Family
ID=85792843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111118807A TWI800382B (zh) | 2021-04-21 | 2021-04-21 | 開關元件 |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI800382B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573549B1 (en) * | 2002-06-21 | 2003-06-03 | Texas Instruments Incorporated | Dynamic threshold voltage 6T SRAM cell |
EP1533901A2 (en) * | 2002-07-09 | 2005-05-25 | National Space Development Agency of Japan | CMOS circuits with protection for a single event upset |
US8878599B2 (en) * | 2010-08-06 | 2014-11-04 | Ricoh Company, Ltd. | Semiconductor integrated circuit device and supply voltage supervisor |
CN107516650A (zh) * | 2016-06-17 | 2017-12-26 | 中国科学院上海微系统与信息技术研究所 | 一种基于soi的单端口sram单元及其制作方法 |
TW202029441A (zh) * | 2019-01-30 | 2020-08-01 | 台達電子工業股份有限公司 | 封裝結構以及製造方法 |
-
2021
- 2021-04-21 TW TW111118807A patent/TWI800382B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573549B1 (en) * | 2002-06-21 | 2003-06-03 | Texas Instruments Incorporated | Dynamic threshold voltage 6T SRAM cell |
EP1533901A2 (en) * | 2002-07-09 | 2005-05-25 | National Space Development Agency of Japan | CMOS circuits with protection for a single event upset |
US8878599B2 (en) * | 2010-08-06 | 2014-11-04 | Ricoh Company, Ltd. | Semiconductor integrated circuit device and supply voltage supervisor |
CN107516650A (zh) * | 2016-06-17 | 2017-12-26 | 中国科学院上海微系统与信息技术研究所 | 一种基于soi的单端口sram单元及其制作方法 |
TW202029441A (zh) * | 2019-01-30 | 2020-08-01 | 台達電子工業股份有限公司 | 封裝結構以及製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202243205A (zh) | 2022-11-01 |
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