TWI799794B - 帶電粒子評估工具及檢測方法 - Google Patents

帶電粒子評估工具及檢測方法 Download PDF

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Publication number
TWI799794B
TWI799794B TW110105897A TW110105897A TWI799794B TW I799794 B TWI799794 B TW I799794B TW 110105897 A TW110105897 A TW 110105897A TW 110105897 A TW110105897 A TW 110105897A TW I799794 B TWI799794 B TW I799794B
Authority
TW
Taiwan
Prior art keywords
charged particle
inspection method
assessment tool
particle assessment
tool
Prior art date
Application number
TW110105897A
Other languages
English (en)
Other versions
TW202136764A (zh
Inventor
瑪寇 傑 加寇 威蘭德
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP20158804.3A external-priority patent/EP3869535A1/en
Application filed by 荷蘭商Ａｓｍｌ荷蘭公司 filed Critical 荷蘭商Ａｓｍｌ荷蘭公司
Publication of TW202136764A publication Critical patent/TW202136764A/zh
Application granted granted Critical
Publication of TWI799794B publication Critical patent/TWI799794B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H01J2237/04756—Changing particle velocity decelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW110105897A 2020-02-21 2021-02-20 帶電粒子評估工具及檢測方法 TWI799794B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP20158804.3 2020-02-21
EP20158804.3A EP3869535A1 (en) 2020-02-21 2020-02-21 Charged particle assessment tool, inspection method
EP20206984 2020-11-11
EP20206984.5 2020-11-11

Publications (2)

Publication Number Publication Date
TW202136764A TW202136764A (zh) 2021-10-01
TWI799794B true TWI799794B (zh) 2023-04-21

Family

ID=74556941

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110105897A TWI799794B (zh) 2020-02-21 2021-02-20 帶電粒子評估工具及檢測方法
TW112120000A TW202338342A (zh) 2020-02-21 2021-02-20 帶電粒子評估工具及檢測方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112120000A TW202338342A (zh) 2020-02-21 2021-02-20 帶電粒子評估工具及檢測方法

Country Status (8)

Country Link
US (1) US20220392743A1 (zh)
EP (1) EP4107774A1 (zh)
JP (1) JP7457820B2 (zh)
KR (1) KR20220130196A (zh)
CN (1) CN115152000A (zh)
IL (1) IL295629A (zh)
TW (2) TWI799794B (zh)
WO (1) WO2021165136A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022136064A1 (en) 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060169898A1 (en) * 2005-01-26 2006-08-03 Canon Kabushiki Kaisha Aberration measuring apparatus for charged particle beam optical system, charged particle beam lithography machine having the aberration measuring apparatus, and device fabrication method using the apparatus
US20100133433A1 (en) * 2006-12-27 2010-06-03 Sayaka Tanimoto Electron beam apparatus
US20100276606A1 (en) * 2009-04-29 2010-11-04 Mapper Lithography Ip B.V. Charged particle optical system comprising an electrostatic deflector
US20140014852A1 (en) * 2008-02-26 2014-01-16 Mapper Lithography Ip B.V. Projection lens arrangement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1759465B (zh) 2003-03-10 2010-06-16 迈普尔平版印刷Ip有限公司 用于产生多个小波束的装置
JP4015626B2 (ja) 2004-01-14 2007-11-28 株式会社日立ハイテクノロジーズ 荷電粒子ビーム露光装置
NL2007604C2 (en) 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
EP2779205B1 (en) 2013-03-15 2017-10-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High throughput scan deflector and method of manufacturing thereof
EP2801997B1 (en) 2013-05-06 2016-03-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron beam wafer inspection system and method for operation thereof
JP6649130B2 (ja) 2016-03-08 2020-02-19 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
US10395887B1 (en) 2018-02-20 2019-08-27 Technische Universiteit Delft Apparatus and method for inspecting a surface of a sample, using a multi-beam charged particle column

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060169898A1 (en) * 2005-01-26 2006-08-03 Canon Kabushiki Kaisha Aberration measuring apparatus for charged particle beam optical system, charged particle beam lithography machine having the aberration measuring apparatus, and device fabrication method using the apparatus
US20100133433A1 (en) * 2006-12-27 2010-06-03 Sayaka Tanimoto Electron beam apparatus
US20140014852A1 (en) * 2008-02-26 2014-01-16 Mapper Lithography Ip B.V. Projection lens arrangement
US20100276606A1 (en) * 2009-04-29 2010-11-04 Mapper Lithography Ip B.V. Charged particle optical system comprising an electrostatic deflector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
期刊 H. M. P. van Himbergen,a M. D. Nijkerk, and P. W. H. de Jager High throughput defect detection with multiple parallel electron beams J. Vac. Sci. Technol. B Vol. 25, No. 6 pp. 2521-2525 *

Also Published As

Publication number Publication date
TW202136764A (zh) 2021-10-01
KR20220130196A (ko) 2022-09-26
WO2021165136A1 (en) 2021-08-26
JP7457820B2 (ja) 2024-03-28
EP4107774A1 (en) 2022-12-28
US20220392743A1 (en) 2022-12-08
IL295629A (en) 2022-10-01
TW202338342A (zh) 2023-10-01
JP2023514093A (ja) 2023-04-05
CN115152000A (zh) 2022-10-04

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