TWI797572B - Humidity sensor - Google Patents
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- TWI797572B TWI797572B TW110108747A TW110108747A TWI797572B TW I797572 B TWI797572 B TW I797572B TW 110108747 A TW110108747 A TW 110108747A TW 110108747 A TW110108747 A TW 110108747A TW I797572 B TWI797572 B TW I797572B
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Abstract
Description
本發明是有關於一種感測器,且特別是有關於一種濕度感測器。The present invention relates to a sensor, and in particular to a humidity sensor.
一般濕度感測器分為電阻式和電容式的濕度感測器。電阻式的濕度感測器是利用感測層本身受濕度影響導致自身電阻值改變的特性,藉由量測感測層本身的電阻值來換算成相對濕度,其反應速度快,相較於電容式的濕度感測器量測成本較低,但電阻式的濕度感測器所測得的電阻與相對濕度並非線性關係,需經過對數運算處理,互換性較差。電容式的濕度感測器是利用感測層本身受濕度影響導致自身介電常數改變的特性,使電容值也隨濕度改變,因此可藉由量測感測層的電容值而得到相對濕度,其中電容值與相對濕度為線性關係,因此互換性佳,但電容式的濕度感測器反應速度較慢,相較於電阻式的濕度感測器量測成本較高。Generally, humidity sensors are divided into resistive and capacitive humidity sensors. The resistive humidity sensor uses the characteristic that the sensing layer itself is affected by humidity to cause its own resistance to change. By measuring the resistance of the sensing layer itself to convert it into relative humidity, its response speed is fast, compared with capacitance The measurement cost of the type humidity sensor is low, but the resistance measured by the resistance type humidity sensor has no linear relationship with the relative humidity, and it needs to be processed by logarithm operation, so the interchangeability is poor. The capacitive humidity sensor uses the characteristic that the sensing layer itself is affected by humidity to cause its own dielectric constant to change, so that the capacitance value also changes with humidity. Therefore, the relative humidity can be obtained by measuring the capacitance value of the sensing layer. Among them, the capacitance value has a linear relationship with the relative humidity, so the interchangeability is good, but the response speed of the capacitive humidity sensor is slower, and the measurement cost is higher than that of the resistive humidity sensor.
本發明提供一種濕度感測器,其為電阻和相對濕度具有線性關係的電阻式濕度感測器。The invention provides a humidity sensor, which is a resistive humidity sensor with a linear relationship between resistance and relative humidity.
本發明的濕度感測器包括基板、感測層以及單一電極結構。所述感測層,設置於所述基板上。所述單一電極結構,設置於所述感測層的表面,並根據所述單一電極結構的兩端點的電阻值得到相對濕度。The humidity sensor of the present invention includes a substrate, a sensing layer and a single electrode structure. The sensing layer is arranged on the substrate. The single electrode structure is disposed on the surface of the sensing layer, and the relative humidity is obtained according to the resistance values at both ends of the single electrode structure.
在本發明的一實施例中,上述的單一電極結構為直線電極,且所述感測層的吸水厚度膨脹率小於10%。In an embodiment of the present invention, the above-mentioned single electrode structure is a linear electrode, and the water absorption thickness expansion rate of the sensing layer is less than 10%.
在本發明的一實施例中,上述的單一電極結構為蛇形電極或螺旋形電極,且所述感測層的吸水厚度膨脹率在0%~10%之間。In an embodiment of the present invention, the above-mentioned single electrode structure is a serpentine electrode or a spiral electrode, and the water absorption thickness expansion rate of the sensing layer is between 0% and 10%.
在本發明的一實施例中,上述的單一電極結構的厚度與所述感測層的厚度之比例小於1。In an embodiment of the present invention, the ratio of the thickness of the above-mentioned single electrode structure to the thickness of the sensing layer is less than 1.
本發明的濕度感測器包括基板、立體感測結構以及單一電極結構。所述立體感測結構,設置於所述基板上,所述立體感測結構的表面為非平面。所述單一電極結構,設置於所述立體感測結構的表面,並根據所述單一電極結構的兩端點的電阻值得到相對濕度。The humidity sensor of the present invention includes a substrate, a three-dimensional sensing structure and a single electrode structure. The stereoscopic sensing structure is disposed on the substrate, and the surface of the stereoscopic sensing structure is non-planar. The single electrode structure is arranged on the surface of the three-dimensional sensing structure, and the relative humidity is obtained according to the resistance values at both ends of the single electrode structure.
在本發明的一實施例中,上述的立體感測結構為圓錐結構、四角錐結構或金字塔型結構。In an embodiment of the present invention, the above-mentioned stereoscopic sensing structure is a cone structure, a quadrangular pyramid structure or a pyramid structure.
在本發明的一實施例中,上述的單一電極結構的厚度與所述立體感測結構的最大厚度之比例小於1。In an embodiment of the present invention, the ratio of the thickness of the above-mentioned single electrode structure to the maximum thickness of the stereoscopic sensing structure is less than 1.
在本發明的一實施例中,上述的單一電極結構為直線電極,且所述立體感測結構的吸水厚度膨脹率小於10%。In an embodiment of the present invention, the above-mentioned single electrode structure is a linear electrode, and the water absorption thickness expansion rate of the three-dimensional sensing structure is less than 10%.
在本發明的一實施例中,上述的單一電極結構為蛇形電極或螺旋形電極,且所述立體感測結構的吸水厚度膨脹率在0%~10%之間。In an embodiment of the present invention, the above-mentioned single electrode structure is a serpentine electrode or a spiral electrode, and the water absorption thickness expansion rate of the three-dimensional sensing structure is between 0% and 10%.
在本發明的一實施例中,上述的單一電極與所述基板互不接觸。In an embodiment of the present invention, the above-mentioned single electrode is not in contact with the substrate.
基於上述,本發明的濕度感測器包括感測層或立體感測結構設置於基板與單一電極結構之間,藉由量測單一電極結構的電阻值,可得感測層或立體感測結構的應力變化,進而得到相對濕度,且單一電極結構的電阻值與相對濕度為線性關係,因此單一電極結構的電阻值無需再經對數運算而可得相對濕度,實現互換性佳的電阻式濕度感測器的需求,解決了傳統電阻式濕度感測器需將電阻值經對數運算才能得到相對濕度的問題。Based on the above, the humidity sensor of the present invention includes a sensing layer or a three-dimensional sensing structure disposed between the substrate and a single electrode structure. By measuring the resistance value of the single electrode structure, the sensing layer or three-dimensional sensing structure can be obtained. The stress change of the single electrode structure can be used to obtain the relative humidity, and the resistance value of the single electrode structure has a linear relationship with the relative humidity. Therefore, the resistance value of the single electrode structure does not need to be logarithmically calculated to obtain the relative humidity, and the resistance humidity sensor with good interchangeability can be realized. It solves the problem that traditional resistive humidity sensors need to logarithmically calculate the resistance value to obtain relative humidity.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
下文列舉實施例並配合所附圖式來進行詳細地說明,但所提供的實施例並非用以限制本發明所涵蓋的範圍。此外,圖式僅以說明為目的,並未依照原尺寸作圖。為了方便理解,下述說明中相同的元件將以相同的符號標示來說明。The following examples are listed and described in detail with the accompanying drawings, but the provided examples are not intended to limit the scope of the present invention. In addition, the drawings are for illustrative purposes only and are not drawn to original scale. In order to facilitate understanding, the same elements in the following description will be described with the same symbols.
此外,關於文中所使用「包含」、「包括」、「具有」等等用語,均為開放性的用語,也就是指「包括但不限於」。In addition, terms such as "comprising", "including", and "having" used in the text are all open terms, which means "including but not limited to".
應當理解,儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的「第一元件」、「部件」、「區域」、「層」、或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or or parts thereof shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer," or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
另外,文中所提到的方向性用語,例如「上」、「下」等,僅是用以參考圖式的方向,並非用來限制本發明。In addition, the directional terms mentioned in the text, such as "up" and "down", are only used to refer to the directions of the drawings, and are not used to limit the present invention.
圖1為依照本發明第一實施例的濕度感測器的分層示意圖。FIG. 1 is a layered diagram of a humidity sensor according to a first embodiment of the present invention.
請參照圖1,濕度感測器10a包括基板100、感測層110及單一電極結構120。基板100可以包括硬質基板或可撓性基板,本發明並不以此為限。感測層110設置於基板100上,單一電極結構120設置於感測層110的表面111,並與感測層110貼合。單一電極結構120在基板100的投影範圍不超出感測層110在基板100的投影範圍,也就是說,單一電極結構120與基板100互不接觸。Referring to FIG. 1 , the
感測層110基本上為一具有均勻厚度t1的平面,例如可藉由旋塗法、浸塗法或其他合適方法形成。感測層110的材料可以為吸水膨脹材料,其膨脹程度隨相對濕度提升而線性增加,例如聚醯亞胺(polyimide)、聚苯乙烯磺酸鈉(sodium po1ystyrenesu1fonate)、聚甲基丙烯酸甲酯(poly(methyl methacrylate), PMMA)、醋酸丁酸纖維素(cellulose acetate-butyrate)、苯環丁烯(benzocyclobutene)或其他合適材料,本發明並不以此為限。感測層110的吸水厚度膨脹率可小於10%,以避免單一電極結構120超出其可承受的應力範圍而崩壞,也就是說,可避免造成單一電極結構120不可逆的形變,同時,單一電極結構120的訊號變化可較穩定,即不會有過大的電阻變化致使訊號變化過大。前述感測層110的吸水厚度膨脹率是指質量的膨脹率經換算而得的厚度膨脹率,進一步地說,吸水厚度膨脹率是藉由量測材料在吸水前後的質量的差值,即為水所造成的質量增加,透過水的密度可回推材料所增加的體積,再經材料的面積可推算出其厚度的變化而得吸水厚度膨脹率,其中吸水厚度膨脹率為0%表示其在無濕度環境中的吸水厚度膨脹率。The
單一電極結構120的形狀並沒有特別限定,只要能感測到感測層110的形變並可量測出單一電極結構120的電阻值即可。在第一實施例中,單一電極結構120為直線電極,沿x方向延伸,但本發明並不以此為限。在一些實施例中,單一電極結構120為可蛇形或螺旋形電極。單一電極結構120的材料可包括金、銀、銅、鉑、鋁、或前述金屬的合金,但本發明並不以此為限。單一電極結構120基本上具有均勻厚度t2,例如可藉由絲網印刷法、物理/化學氣相沉積法或其他合適方法形成。單一電極結構120的厚度t2小於感測層110的厚度t1,且單一電極結構120的厚度t2與感測層110的厚度t1之比例小於1。The shape of the
由於感測層110會隨著相對濕度的改變而有線性膨脹或收縮的變化,且單一電極結構120與感測層110的表面111貼合,會隨著感測層110的形變,一同產生應力變化,可藉由量測單一電極結構120的兩端點的電阻值,得知感測層110的應力變化,進而得到相對濕度。也就是說,基於本實施例的濕度感測器10a的結構,可根據單一電極結構120的兩端點的電阻值得到相對濕度,且相對濕度與單一電極結構120的兩端點的電阻值呈線性關係,因此解決了傳統電阻式濕度計需經過對數運算,互換性差的缺點,並且仍保有傳統電阻式濕度計反應速度快,量測成本較低的優點。換句話說,本發明的濕度感測器10a同時具有傳統電阻式濕度感測器和電容是濕度感測器的優點。Since the
圖2為依照本發明第二實施例的濕度感測器的分層示意圖。圖2的分層示意圖大致相似於圖1的分層示意圖,因此第二實施例中與第一實施例記載的相同構件可參照前述的相關內容,故第一與第二實施例中相同的配置,在此不再贅述。FIG. 2 is a layered schematic diagram of a humidity sensor according to a second embodiment of the present invention. The layered schematic diagram of FIG. 2 is roughly similar to the layered schematic diagram of FIG. 1, so the same components recorded in the second embodiment and the first embodiment can refer to the aforementioned related content, so the same configurations in the first and second embodiments , which will not be repeated here.
在圖2中,本實施例之濕度感測器10b不同於第一實施例之處在於,濕度感測器10b的單一電極結構120為蛇形電極,具有沿x方向及沿y方向延伸的連續結構。單一電極結構120在基板100的投影範圍在感測層110在基板100的投影範圍內。由於單一電極結構120為具有沿x方向及沿y方向延伸的連續結構,可以感測到感測層110的二維應力變化,使濕度感測器10b的應力感測提升、電阻增加,進而使濕度感測器10b的靈敏度提升,且易於微小化。In FIG. 2, the
圖3為依照本發明第三實施例的濕度感測器的分層示意圖。圖4為圖3的A-A剖線的剖面示意圖。FIG. 3 is a layered schematic diagram of a humidity sensor according to a third embodiment of the present invention. FIG. 4 is a schematic cross-sectional view along line A-A of FIG. 3 .
請參照圖3,濕度感測器20a包括基板200、立體感測結構210及單一電極結構220。基板200可以包括硬質基板或可撓性基板,本發明並不以此為限。立體感測結構210設置於基板100上,其中立體感測結構210的表面211為非平面。單一電極結構220設置於立體感測結構210的表面211,並與立體感測結構210貼合。單一電極結構220在基板200的投影範圍不超出立體感測結構210在基板200的投影範圍,也就是說,單一電極結構220與基板200互不接觸。Please refer to FIG. 3 , the
請同時參照圖3及圖4,立體感測結構210可以為中間厚度較厚,周邊區域厚度較薄的結構,例如圓錐結構、四角錐結構或金字塔型結構,在圖3中,立體感測結構210為四角錐結構,但本發明並不以此為限。立體感測結構210可藉由3D列印的方式形成,但本發明並不以此為限。前述立體感測結構210的厚度指的是立體感測結構210的表面211至基板200的表面的垂直距離。在圖4中,立體感測結構210的表面211與基板200所夾的夾角在30∘~90∘之間。立體感測結構210的材料可以為吸水膨脹材料,其膨脹程度隨相對濕度提升而線性增加,例如聚醯亞胺(polyimide)、聚苯乙烯磺酸鈉(sodium po1ystyrenesu1fonate) 、聚甲基丙烯酸甲酯(polymethyl methacrylate)、醋酸丁酸纖維素(cellulose acetate butyrate, CAB)、苯環丁烯(benzocyclobutene)或其他合適材料,本發明並不以此為限。立體感測結構210的吸水厚度膨脹率小於10%,以避免單一電極結構220超出其可承受的應力範圍而崩壞,也就是說,可避免造成單一電極結構220不可逆的形變,同時,單一電極結構220的訊號變化可較穩定,即不會有過大的電阻變化致使訊號變化過大。前述立體感測結構210的吸水厚度膨脹率是指質量的膨脹率經換算而得的厚度膨脹率,進一步地說,吸水厚度膨脹率是藉由量測材料在吸水前後的質量的差值,即為水所造成的質量增加,透過水的密度可回推材料所增加的體積,再經材料的面積可推算出其厚度的變化而得吸水厚度膨脹率,其中吸水厚度膨脹率為0%表示其在無濕度環境中的吸水厚度膨脹率。Please refer to FIG. 3 and FIG. 4 at the same time. The three-
單一電極結構220的形狀並沒有特別限定,只要能感測到立體感測結構210的形變並可量測出單一電極結構220的電阻值即可。在圖3中,單一電極結構220為直線電極,沿x方向延伸,但本發明並不以此為限。在一些實施例中,單一電極結構220為可蛇形或螺旋形電極。單一電極結構220的材料可包括金、銀、銅、鉑、鋁、或前述金屬的合金,但本發明並不以此為限。單一電極結構220基本上具有均勻厚度t4,例如可藉由絲網印刷法、物理/化學氣相沉積法或其他合適方法形成。單一電極結構220的厚度t4小於立體感測結構210的最大厚度t3,且單一電極結構220的厚度t4與立體感測結構210的最大厚度t3之比例小於1。The shape of the
由於立體感測結構210會隨著相對濕度的改變而有線性膨脹或收縮的變化,且單一電極結構220與立體感測結構210的表面211貼合,會隨著立體感測結構210的形變,一同產生應力變化,可藉由量測單一電極結構220的兩端點的電阻值,得知感測層210的應力變化,進而得到相對濕度。也就是說,基於本實施例的濕度感測器20a的結構,可根據單一電極結構220的兩端點的電阻值得到相對濕度,且相對濕度與單一電極結構220的兩端點的電阻值呈線性關係,因此解決了傳統電阻式濕度計需經過對數運算,互換性差的缺點,並且仍保有傳統電阻式濕度計反應速度快,量測成本較低的優點。且由於立體感測結構210的厚度非單一厚度,單一電極結構220可感測到立體感測結構210在x方向及z方向的應力變化,提升應力感測,使濕度感測器20a的靈敏度提升。Since the three-
圖5為依照本發明第四實施例的濕度感測器的分層示意圖。圖5的分層示意圖大致相似於圖3的分層示意圖,因此第四實施例中與第三實施例記載的相同構件可參照前述的相關內容,故第三與第四實施例中相同的配置,在此不再贅述。圖6為圖5的B-B剖線的剖面示意圖。FIG. 5 is a layered schematic diagram of a humidity sensor according to a fourth embodiment of the present invention. The layered schematic diagram of Figure 5 is roughly similar to the layered schematic diagram of Figure 3, so the same components recorded in the fourth embodiment and the third embodiment can refer to the aforementioned related content, so the same configurations in the third and fourth embodiments , which will not be repeated here. FIG. 6 is a schematic cross-sectional view of the line B-B in FIG. 5 .
在圖5以及圖6中,本實施例之濕度感測器20b不同於第三實施例之處在於,濕度感測器20b的單一電極結構220為蛇形電極,具有沿x方向及沿y方向延伸的連續結構,立體感測結構210的吸水厚度膨脹率可在0%~10%之間,以避免造成單一電極結構220不可逆的形變,同時,單一電極結構220的訊號變化可較穩定,即不會有過大的電阻變化致使訊號變化過大。由於單一電極結構220為具有沿x方向及沿y方向延伸的連續結構且立體感測結構210的厚度非單一厚度,單一電極結構220可以感測到立體感測結構210的三維應力變化,使濕度感測器20b的應力感測提升、電阻增加,進而使濕度感測器20b的靈敏度提升,且易於微小化。In FIGS. 5 and 6, the
圖7為依照本發明第五實施例的濕度感測器的分層示意圖。圖7的分層示意圖大致相似於圖3的分層示意圖,因此第五實施例中與第三實施例記載的相同構件可參照前述的相關內容,故第三與第五實施例中相同的配置,在此不再贅述。FIG. 7 is a layered diagram of a humidity sensor according to a fifth embodiment of the present invention. The layered schematic diagram of FIG. 7 is roughly similar to the layered schematic diagram of FIG. 3 , so the same components recorded in the fifth embodiment and the third embodiment can refer to the aforementioned related content, so the same configurations in the third and fifth embodiments , which will not be repeated here.
在圖7中,本實施例之濕度感測器20c不同於第三實施例之處在於,濕度感測器20c的立體感測結構210為圓錐結構,且單一電極結構220貼合於立體感測結構210的表面211,類似於圖4的剖面圖所示。單一電極結構220在基板200的投影範圍不超出立體感測結構210在基板200的投影範圍。由於立體感測結構210的厚度為非單一厚度,單一電極結構220可感測到立體感測結構210在x方向及z方向的應力變化,提升應力感測,使濕度感測器20c的靈敏度提升。In FIG. 7, the
圖8為依照本發明第六實施例的濕度感測器的分層示意圖。圖8的分層示意圖大致相似於圖7的分層示意圖,因此第六實施例中所記載的相同構件可參照前述內容,而第五與第六實施例中相同的配置,在此不再贅述。FIG. 8 is a layered diagram of a humidity sensor according to a sixth embodiment of the present invention. The layered schematic diagram of FIG. 8 is roughly similar to the layered schematic diagram of FIG. 7, so the same components recorded in the sixth embodiment can refer to the foregoing content, and the same configurations in the fifth and sixth embodiments will not be repeated here. .
在圖8中,本實施例之濕度感測器20d不同於第五實施例之處在於,濕度感測器20d的單一電極結構220為螺旋形電極,以逆時針或順時針的方向環繞立體感測結構210,且貼合於立體感測結構210的表面211,類似於圖6的剖面圖所示。單一電極結構220在基板200的投影範圍不超出立體感測結構210在基板200的投影範圍。由於單一電極結構220為螺旋形的連續結構且立體感測結構210的厚度非單一厚度,單一電極結構220可以感測到立體感測結構210的三維應力變化,使濕度感測器20d的應力感測提升、電阻增加,進而使濕度感測器20d的靈敏度提升,且易於微小化。立體感測結構210的吸水厚度膨脹率同樣可在0%~10%之間,以避免造成單一電極結構220不可逆的形變,同時,單一電極結構220的訊號變化可較穩定,即不會有過大的電阻變化致使訊號變化過大。In FIG. 8, the
綜上所述,本發明的濕度感測器包括感測層或立體感測結構設置於基板與單一電極結構之間,藉由量測單一電極結構的電阻值,可得感測層或立體感測結構的應力變化,進而得到相對濕度,且單一電極結構的電阻值與相對濕度為線性關係,因此單一電極結構的電阻值無需再經對數運算而可得相對濕度,實現互換性佳的電阻式濕度感測器的需求,解決了傳統電阻式濕度感測器需將電阻值經對數運算才能得到相對濕度的問題,並保有傳統電阻式濕度感測器反應速度快,量測成本較低的優點。To sum up, the humidity sensor of the present invention includes a sensing layer or a three-dimensional sensing structure disposed between the substrate and a single electrode structure. By measuring the resistance value of the single electrode structure, the sensing layer or three-dimensional sensing structure can be obtained. Measure the stress change of the structure, and then obtain the relative humidity, and the resistance value of the single electrode structure has a linear relationship with the relative humidity. The demand for the humidity sensor solves the problem that the traditional resistive humidity sensor needs to logarithmically calculate the resistance value to obtain the relative humidity, and maintains the advantages of the traditional resistive humidity sensor with fast response speed and low measurement cost .
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.
10a、10b、20a、20b、20c、20d:濕度感測器
100、200:基板
110:感測層
111、211:表面
120、220:單一電極結構
210:立體感測結構
A-A、B-B:剖線
t1、t2、t3、t4:厚度
x、y:方向
θ:夾角
10a, 10b, 20a, 20b, 20c, 20d:
圖1為依照本發明第一實施例的濕度感測器的分層示意圖。 圖2為依照本發明第二實施例的濕度感測器的分層示意圖。 圖3為依照本發明第三實施例的濕度感測器的分層示意圖。 圖4為圖3的A-A剖線的剖面示意圖。 圖5為依照本發明第四實施例的濕度感測器的分層示意圖。 圖6為圖5的B-B剖線的剖面示意圖。 圖7為依照本發明第五實施例的濕度感測器的分層示意圖。 圖8為依照本發明第六實施例的濕度感測器的分層示意圖。 FIG. 1 is a layered diagram of a humidity sensor according to a first embodiment of the present invention. FIG. 2 is a layered schematic diagram of a humidity sensor according to a second embodiment of the present invention. FIG. 3 is a layered schematic diagram of a humidity sensor according to a third embodiment of the present invention. FIG. 4 is a schematic cross-sectional view along line A-A of FIG. 3 . FIG. 5 is a layered schematic diagram of a humidity sensor according to a fourth embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of the line B-B in FIG. 5 . FIG. 7 is a layered diagram of a humidity sensor according to a fifth embodiment of the present invention. FIG. 8 is a layered diagram of a humidity sensor according to a sixth embodiment of the present invention.
10a:濕度感測器 10a: Humidity sensor
100:基板 100: Substrate
110:感測層 110: Sensing layer
111:表面 111: surface
120:單一電極結構 120:Single electrode structure
t1、t2:厚度 t1, t2: Thickness
x、y:方向 x, y: direction
Claims (6)
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020136664A1 (en) * | 1999-12-13 | 2002-09-26 | Lee Don Hee | Absolute humidity sensor |
US20080092649A1 (en) * | 2006-10-18 | 2008-04-24 | Industrial Technology Research Institute | Resistive-type humidity sensing structure with microbridge and method therefor |
TWM380473U (en) * | 2009-12-30 | 2010-05-11 | zhi-qin Yang | Impedance-type humidity sensor |
US20100307238A1 (en) * | 2009-06-05 | 2010-12-09 | The Governors Of The University Of Alberta | Humidity sensor and method of manufacturing the same |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020136664A1 (en) * | 1999-12-13 | 2002-09-26 | Lee Don Hee | Absolute humidity sensor |
US20080092649A1 (en) * | 2006-10-18 | 2008-04-24 | Industrial Technology Research Institute | Resistive-type humidity sensing structure with microbridge and method therefor |
US20100307238A1 (en) * | 2009-06-05 | 2010-12-09 | The Governors Of The University Of Alberta | Humidity sensor and method of manufacturing the same |
TWM380473U (en) * | 2009-12-30 | 2010-05-11 | zhi-qin Yang | Impedance-type humidity sensor |
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