TWI795536B - Composition for forming underlayer film for imprint, kit, composition for forming underlayer film for imprint, underlayer film, laminate and method for producing same, method for producing pattern of hardened product, and method for producing circuit board - Google Patents

Composition for forming underlayer film for imprint, kit, composition for forming underlayer film for imprint, underlayer film, laminate and method for producing same, method for producing pattern of hardened product, and method for producing circuit board Download PDF

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TWI795536B
TWI795536B TW108107340A TW108107340A TWI795536B TW I795536 B TWI795536 B TW I795536B TW 108107340 A TW108107340 A TW 108107340A TW 108107340 A TW108107340 A TW 108107340A TW I795536 B TWI795536 B TW I795536B
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後藤雄一郎
袴田旺弘
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日商富士軟片股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract

本發明提供一種壓印用下層膜形成組成物,其包含聚合物及溶劑, 該組成物中,使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,分子量為210以上的特定化合物從上述聚合物脫離。進而,本發明係有關一種與該壓印用下層膜形成組成物有關之壓印用硬化性組成物及使用該等的試劑盒。 The present invention provides a composition for forming an underlayer film for imprinting, which includes a polymer and a solvent, In this composition, when the composition for forming an underlayer film for imprint is made into a film and baked at 80° C., a specific compound having a molecular weight of 210 or more is released from the polymer. Furthermore, the present invention relates to a curable composition for imprint related to the underlayer film-forming composition for imprint and a kit using the same.

Description

壓印用下層膜形成組成物、試劑盒、壓印用下層膜形成組 成物、下層膜、積層體及其製造方法、硬化物圖案的製造方法及電路基板的製造方法 Underlayer film forming composition for imprint, kit, underlayer film forming set for imprint Product, underlayer film, laminate, method for manufacturing same, method for manufacturing cured product pattern, and method for manufacturing circuit board

本發明有關一種壓印用下層膜形成組成物、壓印用硬化性組成物、試劑盒的提供。 The present invention relates to an underlayer film-forming composition for imprinting, a curable composition for imprinting, and a kit.

壓印法係藉由將鑄模壓至硬化性組成物並使組成物硬化之後剝離鑄模而轉印微細的圖案者。正在嘗試將該方法適用於半導體積體電路的製造等精密加工領域。由於壓印法而不需要分節器或電子束等昂貴的微細加工裝置。由於能夠實現降低製造成本、步驟簡單、高解析度及高處理量,因此在各種領域中積極研究器件的量產。 The imprint method transfers a fine pattern by pressing a mold onto a curable composition, hardening the composition, and peeling off the mold. Attempts are being made to apply this method to precision processing fields such as the manufacture of semiconductor integrated circuits. Due to the embossing method, expensive microfabrication devices such as segmenters or electron beams are not required. Since reduction in manufacturing cost, simple steps, high resolution, and high throughput can be achieved, mass production of devices is being actively studied in various fields.

在壓印法中,存在作為適用於圖案化之材料使用感光性樹脂組成物,且組合光透射性鑄模而進行加工之技術。該製造方法中,經由鑄模照射光,從而在配設於基板之感光性樹脂組成物的硬化膜上形成圖案,並將其作為絕緣構件,或將其作為用於進一步進行加工之遮罩。有時將作為照射之光使用紫外線(UV:Ultraviolet)者,特別稱作UV奈米壓印法。以該UV奈米壓印法為代表之光奈米壓印法,與需要使用熱硬化性樹脂組成物進行加熱之熱奈米壓印法不同,能夠進行室溫下的加工。因此,在排斥熱之半導體器件等製造中,能夠作為實現高品質之技術而廣泛地對應。 In the imprint method, there is a technique in which a photosensitive resin composition is used as a material suitable for patterning, combined with a light-transmitting mold, and processed. In this manufacturing method, light is irradiated through a mold to form a pattern on a cured film of a photosensitive resin composition disposed on a substrate, and this is used as an insulating member or a mask for further processing. In some cases, ultraviolet light (UV: Ultraviolet) is used as the light to be irradiated, and it is especially called UV nanoimprint method. The optical nanoimprint method represented by the UV nanoimprint method is different from the thermal nanoimprint method which requires heating using a thermosetting resin composition, and can process at room temperature. Therefore, in the manufacture of heat-repelling semiconductor devices, etc., it can be widely used as a technology for realizing high quality.

在使用感光性樹脂組成物之光奈米壓印法中,提出有利用下層膜 之技術(參閱專利文獻1)。例如,專利文獻1中,揭示有一種下層膜形成用樹脂組成物,其含有:樹脂,具有(甲基)丙烯醯氧基、烷氧基羰基、及選自環氧乙基及氧雜環丁基中的至少1種基團;非離子性界面活性劑;及溶劑。且記載有如下內容:藉此鑄模擠壓後的殘餘膜厚度的偏差小,加壓後的圖案的線寬分佈不易產生偏差。 In the photonanoimprint method using a photosensitive resin composition, it is proposed to use the underlayer film technology (see Patent Document 1). For example, Patent Document 1 discloses a resin composition for forming an underlayer film, which contains: a resin having a (meth)acryloyloxy group, an alkoxycarbonyl group, and a resin selected from the group consisting of oxiranyl and oxetane at least one group in the group; a nonionic surfactant; and a solvent. In addition, it is described that the variation in residual film thickness after die extrusion is small, and the line width distribution of the pattern after pressurization is less prone to variation.

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Document]

[專利文獻1]國際公開第2016/027843號 [Patent Document 1] International Publication No. 2016/027843

如上所述,與基於光刻之技術相比,基於壓印之微細圖案的形成其效率極佳,能夠大幅改善製造半導體器件之製造成本及生產率。而且,隨著半導體技術的進步,要求圖案的微細化或製造品質上的進一步改善。例如,在基於壓印之製造過程中,為了提高基板與壓印用硬化性組成物的密接性,研究使用壓印用下層膜形成組成物在上述壓印用下層膜形成組成物的塗膜的表面適用壓印用硬化性組成物而形成膜,關於該膜的潤濕性,要求進一步提高。又,當然還要求由該等組成物形成之下層膜與壓印層的密接性。 As mentioned above, compared with the technology based on photolithography, the formation of fine patterns by imprint is extremely efficient, and can greatly improve the manufacturing cost and productivity of manufacturing semiconductor devices. Furthermore, with the advancement of semiconductor technology, miniaturization of patterns and further improvement in manufacturing quality are required. For example, in order to improve the adhesiveness between the substrate and the curable composition for imprint in the manufacturing process by imprint, the method of using the underlayer film-forming composition for imprint to coat the underlayer film-forming composition for imprint is studied. The wettability of a film formed by applying a curable composition for imprinting to the surface is required to be further improved. Also, of course, the adhesiveness between the underlayer film formed of these compositions and the imprint layer is also required.

因此,本發明的目的在於,提供一種壓印用硬化性組成物相對於壓印用下層膜形成組成物的塗膜之潤濕性更優異,且由該等組成物形成之下層膜與壓印層的密接性優異之壓印用下層膜形成組成物、壓印用硬化性組成物及使用該等之試劑盒。 Therefore, it is an object of the present invention to provide a curable composition for imprints that is more excellent in wettability of a coating film than an underlayer film-forming composition for imprints, and to provide an underlayer film formed from these compositions that is compatible with imprints. An underlayer film-forming composition for imprints excellent in layer adhesion, a curable composition for imprints, and a kit using them.

以上述課題為基礎,本發明人等進行了研究,其結果發現藉由採用能夠在壓印用下層膜形成組成物中產生特定脫離成分之聚合物,能夠解 決上述課題。具體而言,藉由下述方法<1>,較佳為藉由<2>至<27>解決了上述課題。 Based on the above-mentioned problems, the inventors of the present invention conducted research and found that by using a polymer capable of producing a specific detachment component in the underlayer film-forming composition for imprint, it is possible to solve the problem. resolve the above issues. Specifically, the above-mentioned problems are solved by the following method <1>, preferably <2> to <27>.

<1>一種壓印用下層膜形成組成物,其包含聚合物及溶劑,該組成物中,使上述壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,由下述式(r1)或(r2)表示且分子量為210以上的化合物從上述聚合物脫離,

Figure 108107340-A0305-02-0004-1
<1> An underlayer film-forming composition for imprint, comprising a polymer and a solvent, in which, when the above-mentioned underlayer film-forming composition for imprint is made into a film and baked at 80°C, the following The compound represented by the formula (r1) or (r2) and having a molecular weight of 210 or more is released from the polymer,
Figure 108107340-A0305-02-0004-1

式中,Rr1、Rr2、Rr4、Rr5及Rr6分別獨立地為氫原子或1價的取代基,Rr1及Rr2中的至少一者為取代基,Rr4、Rr5及Rr6中的至少1個為取代基,Rr3為2價的取代基。 In the formula, R r1 , R r2 , R r4 , R r5 and R r6 are each independently a hydrogen atom or a monovalent substituent, at least one of R r1 and R r2 is a substituent, R r4 , R r5 and At least one of R r6 is a substituent, and R r3 is a divalent substituent.

<2>如<1>所述之壓印用下層膜形成組成物,其中由上述式(r1)或(r2)表示之化合物由式(r1-1)表示,

Figure 108107340-A0305-02-0004-2
<2> The underlayer film-forming composition for imprint according to <1>, wherein the compound represented by the above formula (r1) or (r2) is represented by the formula (r1-1),
Figure 108107340-A0305-02-0004-2

式中,Rr1及Rr2分別獨立地為氫原子或1價的取代基,Rr1及Rr2中的至少一者為取代基。 In the formula, R r1 and R r2 are each independently a hydrogen atom or a monovalent substituent, and at least one of R r1 and R r2 is a substituent.

<3>如<1>或<2>所述之壓印用下層膜形成組成物,其中上述聚合物包含由下述式(R-1)~(R-4)中的任一個表示之基團,[化學式3]

Figure 108107340-A0305-02-0005-3
<3> The imprint underlayer film-forming composition according to <1> or <2>, wherein the polymer contains a group represented by any one of the following formulas (R-1) to (R-4) group, [chemical formula 3]
Figure 108107340-A0305-02-0005-3

式中,R1~R3分別獨立地為1價的取代基,R4~R12分別獨立地為氫原子或1價的取代基,X表示向聚合物的主鏈鍵結之位置。 In the formula, R 1 to R 3 are each independently a monovalent substituent, R 4 to R 12 are each independently a hydrogen atom or a monovalent substituent, and X represents a bonding position to the main chain of the polymer.

<4>如<3>所述之壓印用下層膜形成組成物,其中式中的C-O鍵從包含由上述式(R-1)~(R-4)中的任一個表示之取代基之聚合物分解,從而由上述式(r1)或(r2)表示且分子量210以上的化合物從上述聚合物脫離。 <4> The underlayer film-forming composition for imprint according to <3>, wherein the C-O bond in the formula is selected from substituents represented by any one of the above formulas (R-1) to (R-4). The polymer is decomposed, and the compound represented by the above-mentioned formula (r1) or (r2) and having a molecular weight of 210 or more is detached from the above-mentioned polymer.

<5>如<1>至<4>中任一項所述之壓印用下層膜形成組成物,其中上述聚合物包含聚合性基團。 <5> The composition for forming an underlayer film for imprint according to any one of <1> to <4>, wherein the polymer contains a polymerizable group.

<6>如<5>所述之壓印用下層膜形成組成物,其中上述聚合性基團包含(甲基)丙烯醯基。 <6> The composition for forming an underlayer film for imprint according to <5>, wherein the polymerizable group includes a (meth)acryl group.

<7>如<1>至<6>中任一項所述之壓印用下層膜形成組成物,其中上述聚合物包含芳香環。 <7> The composition for forming an underlayer film for imprint according to any one of <1> to <6>, wherein the polymer contains an aromatic ring.

<8>如<1>至<7>中任一項所述之壓印用下層膜形成組成物,其中上述聚合物包含由下述式(1)~式(6)中的任一個表示之構成單元中的至少1種。 <8> The imprint underlayer film-forming composition according to any one of <1> to <7>, wherein the polymer is represented by any one of the following formulas (1) to (6). At least one of the constituent units.

[化學式4]

Figure 108107340-A0305-02-0006-4
[chemical formula 4]
Figure 108107340-A0305-02-0006-4

式中,RP4為氫原子或甲基,RP1表示能夠使由式(r1)或(r2)表示之化合物脫離的基團。 In the formula, R P4 is a hydrogen atom or a methyl group, and R P1 represents a group capable of detaching the compound represented by the formula (r1) or (r2).

<9>如<1>至<8>中任一項所述之壓印用下層膜形成組成物,其中由上述式(r1)或(r2)表示之化合物包含芳香環。 <9> The imprint underlayer film-forming composition according to any one of <1> to <8>, wherein the compound represented by the above formula (r1) or (r2) contains an aromatic ring.

<10>如<1>至<9>中任一項所述之壓印用下層膜形成組成物,其中由上述式(r1)或(r2)表示之化合物包含聚合性基團。 <10> The imprint underlayer film-forming composition according to any one of <1> to <9>, wherein the compound represented by the above formula (r1) or (r2) contains a polymerizable group.

<11>如<10>所述之壓印用下層膜形成組成物,其中上述聚合性基團包含(甲基)丙烯醯基。 <11> The composition for forming an underlayer film for imprint according to <10>, wherein the polymerizable group includes a (meth)acryl group.

<12>如<1>至<11>中任一項所述之壓印用下層膜形成組成物,其中上述式(r1)的Rr1及Rr2中的至少1個及式(r2)的Rr4~Rr6中的至少1個包含聚合性基團。 <12> The composition for forming an underlayer film for imprint according to any one of <1> to <11>, wherein at least one of R r1 and R r2 of the above formula (r1) is the same as that of the formula (r2) At least one of R r4 to R r6 contains a polymerizable group.

<13>如<1>至<12>中任一項所述之壓印用下層膜形成組成物,其中由上述式(r1)或(r2)表示之化合物的分子量為1000以下。 <13> The imprint underlayer film-forming composition according to any one of <1> to <12>, wherein the compound represented by the above formula (r1) or (r2) has a molecular weight of 1000 or less.

<14>如<1>至<13>中任一項所述之壓印用下層膜形成組成物,其還包含脫離反應促進劑或其前驅物。 <14> The composition for forming an underlayer film for imprint according to any one of <1> to <13>, further comprising a release reaction accelerator or a precursor thereof.

<15>如<1>至<14>中任一項所述之壓印用下層膜形成組成物,其 還包含光聚合起始劑。 <15> The composition for forming an underlayer film for imprint according to any one of <1> to <14>, which is A photopolymerization initiator is also included.

<16>如<1>至<15>中任一項所述之壓印用下層膜形成組成物,其中由上述式(r1)或(r2)表示之化合物的表面張力為35~55mN/m。 <16> The imprint underlayer film-forming composition according to any one of <1> to <15>, wherein the compound represented by the above formula (r1) or (r2) has a surface tension of 35 to 55 mN/m .

<17>如<1>至<16>中任一項所述之壓印用下層膜形成組成物,其中以95.0質量%以上的比例包含溶劑。 <17> The imprint underlayer film-forming composition according to any one of <1> to <16>, wherein the solvent is contained in a proportion of 95.0% by mass or more.

<18>一種壓印用硬化性組成物,其包含聚合性化合物,並與<1>至<17>中任一項所述之壓印用下層膜形成組成物組合而使用。 <18> A curable imprint composition containing a polymerizable compound, used in combination with the underlayer film-forming composition for imprint according to any one of <1> to <17>.

<19>一種試劑盒,其包含<1>至<17>中任一項所述之壓印用下層膜形成組成物及包含聚合性化合物之壓印用硬化性組成物。 <19> A kit comprising the imprint underlayer film-forming composition according to any one of <1> to <17> and a curable imprint composition containing a polymerizable compound.

<20>如<19>所述之試劑盒,其中依據由上述式(r1)或(r2)表示之化合物的漢森溶解度參數及上述壓印用硬化性組成物的漢森溶解度參數並由下述數學式(H1)計算之△HSP值為5以下,△HSP=(4.0×△D2+△P2+△H2)0.5......(H1) <20> The kit according to <19>, wherein the Hansen solubility parameter of the compound represented by the above-mentioned formula (r1) or (r2) and the Hansen solubility parameter of the above-mentioned hardening composition for imprinting are determined as follows: The △HSP value calculated by the above mathematical formula (H1) is less than 5, △HSP=(4.0×△D 2 +△P 2 +△H 2 ) 0.5 ......(H1)

上述△D為壓印用硬化性組成物的漢森溶解度參數向量的分散項成分與由式(r1)或(r2)表示之化合物的漢森溶解度參數向量的分散項成分之差,上述△P為壓印用硬化性組成物的漢森溶解度參數向量的極性項成分與由式(r1)或(r2)表示之化合物的漢森溶解度參數向量的極性項成分之差,上述△H為壓印用硬化性組成物的漢森溶解度參數向量的氫鍵項成分與由式(r1)或(r2)表示之化合物的漢森溶解度參數向量的氫鍵項成分之差。 The above ΔD is the difference between the dispersion term component of the Hansen solubility parameter vector of the curable composition for imprinting and the dispersion term component of the Hansen solubility parameter vector of the compound represented by the formula (r1) or (r2), and the above ΔP is the difference between the polar term component of the Hansen solubility parameter vector of the curable composition for imprinting and the polar term component of the Hansen solubility parameter vector of the compound represented by formula (r1) or (r2), and the above ΔH is the imprint The difference between the hydrogen bond component of the Hansen solubility parameter vector of the curable composition and the hydrogen bond component of the Hansen solubility parameter vector of the compound represented by formula (r1) or (r2).

<21>一種下層膜,其由<1>至<17>中任一項所述之下層膜形成組成物形成。 <21> An underlayer film formed of the underlayer film-forming composition according to any one of <1> to <17>.

<22>一種積層體,其由<19>或<20>所述之試劑盒形成,該積層體具有:下層膜,由上述壓印用下層膜形成組成物形成;及壓印層,由上述壓印用硬化性組成物形成,且位於上述下層膜的表面。 <22> A laminate formed from the kit described in <19> or <20>, the laminate comprising: an underlayer film formed of the above-mentioned underlayer film-forming composition for imprinting; and an imprint layer composed of the above-mentioned The emboss is formed of a curable composition and located on the surface of the lower layer film.

<23>一種積層體的製造方法,其使用<19>或<20>所述之試劑盒製造積層體,其中該製造方法包括在由上述壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物。 <23> A method for producing a laminate using the kit described in <19> or <20>, wherein the production method includes forming a surface of an underlayer film formed of the above imprint underlayer film-forming composition Suitable for hardening compositions for imprinting.

<24>如<23>所述之積層體的製造方法,其中上述壓印用硬化性組成物藉由噴墨法適用於上述下層膜的表面。 <24> The method for producing a laminate according to <23>, wherein the curable composition for imprinting is applied to the surface of the underlayer film by an inkjet method.

<25>如<23>或<24>所述之積層體的製造方法,其中該製造方法還包括在基板上將上述壓印用下層膜形成組成物適用為層狀之製程,並包括在80~250℃下加熱適用成上述層狀之壓印用下層膜形成組成物之製程。 <25> The method for producing a laminate according to <23> or <24>, wherein the production method further includes a process of applying the imprint underlayer film-forming composition on a substrate in a layered form, and the step of 80 Heating at ~250°C is suitable for the process of forming the above layered underlayer film-forming composition for imprinting.

<26>一種硬化物圖案的製造方法,其使用<19>或<20>所述之試劑盒製造硬化物圖案,該硬化物圖案的製造方法具有:下層膜形成製程,在基板上適用壓印用下層膜形成組成物而形成下層膜;適用製程,在上述下層膜的表面適用壓印用硬化性組成物;鑄模接觸製程,使上述壓印用硬化性組成物與具有用於轉印圖案形狀之圖案之鑄模接觸;光照射製程,向上述壓印用硬化性組成物照射光而形成硬化物;及脫模製程,分離上述硬化物與上述鑄模。 <26> A method for manufacturing a cured product pattern, which uses the kit described in <19> or <20> to manufacture a cured product pattern, and the method for manufacturing a cured product pattern includes: a lower layer film forming process, and applying embossing on a substrate An underlayer film is formed by using an underlayer film forming composition; an application process is applied to the surface of the above underlayer film with a curable composition for imprinting; a mold contact process is used to combine the above curable composition for imprint with a shape for transferring a pattern The mold contact of the pattern; the light irradiation process, irradiating light to the curable composition for imprint to form a cured product; and the demoulding process, separating the cured product from the mold.

<27>一種電路基板的製造方法,其包括藉由<26>所述之製造方法獲得硬化物圖案之製程。 <27> A method for manufacturing a circuit board, including a process of obtaining a cured product pattern by the method described in <26>.

依本發明,能夠提高壓印用硬化性組成物相對於壓印用下層膜形成組成物的塗膜之潤濕性及由該等組成物形成之下層膜與壓印層的密接性。又,能夠提供適用該技術之壓印用下層膜形成組成物、壓印用硬化性組成物及適用該等之試劑盒。 According to the present invention, it is possible to improve the wettability of the imprint curable composition to the coating film of the imprint underlayer film-forming composition and the adhesion between the underlayer film and the imprint layer formed of the composition. In addition, an underlayer film-forming composition for imprint, a curable composition for imprint, and a kit for applying the same can be provided.

1:基板 1: Substrate

2:下層膜 2: Lower film

3:壓印用硬化性組成物 3: Hardening composition for imprinting

4:鑄模 4: Molding

21:下層膜 21: Lower film

22:壓印用硬化性組成物 22: Hardening composition for imprinting

22a、22b、22c:膜狀的壓印用硬化性組成物 22a, 22b, 22c: film-like curable imprint composition

23:沒有膜的區域 23: Area without membrane

圖1係表示硬化物圖案的形成及將所獲得之硬化物圖案用於基於蝕刻之基板的加工時的製造步驟的一例之製程說明圖。 FIG. 1 is a process explanatory diagram showing an example of a manufacturing step when forming a cured product pattern and using the obtained cured product pattern for processing a substrate by etching.

圖2係示意地表示藉由噴墨法在潤濕性低的下層膜的表面塗佈壓印用硬化性組成物時的、壓印用硬化性組成物的潤濕擴展狀態之俯視圖。 Fig. 2 is a plan view schematically showing the state of wetting and spreading of the curable composition for imprint when the curable composition for imprint is coated on the surface of the underlayer film with low wettability by the inkjet method.

以下,對本發明的內容進行詳細說明。再者,在本說明書中,“~”係指以將記載於其前後之數值作為下限值及上限值而包含之含義使用。 Hereinafter, the content of the present invention will be described in detail. In addition, in this specification, "~" is used in the meaning which includes the numerical value described before and after it as a lower limit and an upper limit.

在本說明書中,“(甲基)丙烯酸酯”表示丙烯酸酯及甲基丙烯酸酯。 In this specification, "(meth)acrylate" means acrylate and methacrylate.

在本說明書中,“壓印”係指較佳為1nm~10mm尺寸的圖案轉印,更佳為係指大約10nm~100μm尺寸的圖案轉印(奈米壓印)。 In this specification, "imprinting" refers to transfer printing of a pattern preferably having a size of 1 nm to 10 mm, more preferably transfer printing of a pattern having a size of about 10 nm to 100 μm (nanoimprinting).

在本說明書中的基團(原子團)的標記中,未記有取代及未經取代之標記為包含不具有取代基者,並且包含具有取代基之者。例如,“烷基”不僅包含不具有取代基之烷基(未經取代烷基),還包含具有取代基之烷基(取代 烷基)。 In the notation of a group (atomic group) in the present specification, the notation of substitution and unsubstituted notation includes those not having a substituent and those having a substituent. For example, "alkyl" includes not only unsubstituted alkyl (unsubstituted alkyl), but also substituted alkyl (substituted alkyl).

在本說明書中,“光”不僅包含紫外、近紫外、遠紫外、可視、紅外等區域的波長的光或電磁波,還包含放射線。放射線例如包含微波、電子束、極紫外線(EUV)、X射線。又,還能夠使用248nm準分子雷射、193nm準分子雷射、172nm準分子雷射等雷射光。該等光可使用通過濾光器之單色光(單一波長光),亦可以是具有複數個不同波長之光(複合光)。 In this specification, "light" includes not only light or electromagnetic waves having wavelengths in ultraviolet, near ultraviolet, far ultraviolet, visible, infrared, and other regions, but also radiation. Radiation includes, for example, microwaves, electron beams, extreme ultraviolet (EUV), and X-rays. In addition, laser light such as a 248 nm excimer laser, a 193 nm excimer laser, or a 172 nm excimer laser can also be used. Such light may be monochromatic light (single-wavelength light) passed through an optical filter, or may be light having a plurality of different wavelengths (composite light).

本發明中的溫度並無特別敘述時,設為23℃。 The temperature in the present invention is set to 23° C. when there is no particular description.

本發明中的沸點係指1個大氣壓(1atm=1013.25hPa)中的沸點。 The boiling point in the present invention refers to the boiling point in 1 atmospheric pressure (1atm=1013.25hPa).

本發明的壓印用下層膜形成組成物的特徵為包含聚合物及溶劑,使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,由下述式(r1)或(r2)表示之化合物(以下,有時稱作脫離成分)從聚合物脫離。藉此,壓印中的壓印用硬化性組成物相對於壓印用下層膜形成組成物的塗膜之潤濕性提高,且由該等組成物形成之下層膜及壓印層的密接性提高。其理由可推斷為如下。亦即,認為低分子成分的生成導致下層膜的表面上的界面張力下降,隨此潤濕性提高。又,認為在下層膜中產生擴散路徑,藉此壓印用硬化性組成物的硬化性成分浸入到下層膜中存在低分子成分之區域,其一部分硬化,藉此與下層膜及硬化物之間的密接性得到提高。 The underlayer film-forming composition for imprint of the present invention is characterized in that it contains a polymer and a solvent. When the underlayer film-forming composition for imprint is made into a film and baked at 80° C., the following formula (r1) or ( The compound represented by r2) (hereinafter, may be referred to as a detachment component) desorbs from the polymer. Thereby, the wettability of the imprint curable composition to the coating film of the imprint underlayer film-forming composition during imprinting is improved, and the adhesiveness between the underlayer film and the imprint layer formed of these compositions is improved. improve. The reason for this can be presumed as follows. That is, it is considered that the generation of low-molecular components leads to a decrease in the interfacial tension on the surface of the underlayer film, thereby improving wettability. In addition, it is considered that a diffusion path is generated in the underlayer film, whereby the curable component of the curable composition for imprint penetrates into the region where the low molecular component exists in the underlayer film, and a part of it is cured, thereby forming a gap between the underlayer film and the cured product. The adhesion is improved.

<壓印用下層膜形成組成物> <Underlayer Film Forming Composition for Imprint>

本發明中,使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,由下述式(r1)或(r2)表示且分子量為210以上的化合物從上述聚合物脫離。以下,本說明書中,將上述化合物稱作脫離成分。 In the present invention, when the underlayer film-forming composition for imprint is formed into a film and baked at 80° C., the compound represented by the following formula (r1) or (r2) and having a molecular weight of 210 or more is released from the polymer. Hereinafter, in this specification, the above-mentioned compound is referred to as a detached component.

<<脫離成分>> <<Departure ingredients>>

脫離成分為使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時從聚合物脫離之成分,且為具有既定結構且分子量為210以上的化合物。 The release component is a component that makes the imprint underlayer film-forming composition into a film and releases from the polymer when baked at 80° C., and is a compound having a predetermined structure and a molecular weight of 210 or more.

本發明的第1實施形態中的脫離成分由下述式(r1)或(r2)表示。若脫離成分為由式(r1)或(r2)表示之化合物,則壓印用硬化性組成物中的聚合起始劑還擴散到壓印用下層膜形成組成物,壓印用硬化性組成物硬化時,壓印用下層膜形成組成物亦同時硬化,從而壓印用硬化性組成物與下層膜的密接性更加優異。 The desorbed component in the first embodiment of the present invention is represented by the following formula (r1) or (r2). If the release component is a compound represented by formula (r1) or (r2), the polymerization initiator in the curable composition for imprint also diffuses into the underlayer film-forming composition for imprint, and the curable composition for imprint When curing, the underlayer film-forming composition for imprint is also cured at the same time, so that the adhesiveness between the curable composition for imprint and the underlayer film is further improved.

Figure 108107340-A0305-02-0011-5
Figure 108107340-A0305-02-0011-5

式中,Rr1、Rr2、Rr4、Rr5及Rr6分別獨立地為氫原子或1價的取代基,Rr1及Rr2中的至少一者為取代基,Rr4、Rr5及Rr6中的至少1個為取代基,Rr3為2價的取代基。 In the formula, R r1 , R r2 , R r4 , R r5 and R r6 are each independently a hydrogen atom or a monovalent substituent, at least one of R r1 and R r2 is a substituent, R r4 , R r5 and At least one of R r6 is a substituent, and R r3 is a divalent substituent.

由式(r1)或(r2)表示之化合物由下述式(r1-1)表示為較佳。 The compound represented by formula (r1) or (r2) is preferably represented by the following formula (r1-1).

Figure 108107340-A0305-02-0011-6
Figure 108107340-A0305-02-0011-6

式中,Rr1及Rr2分別獨立地為氫原子或1價的取代基,Rr1及Rr2中的至少一者為取代基。 In the formula, R r1 and R r2 are each independently a hydrogen atom or a monovalent substituent, and at least one of R r1 and R r2 is a substituent.

脫離成分(由式(r1)或(r2)表示之化合物或由式(r1-1)表示之化合物)包含芳香環(下述環aCy或hCy為較佳)為較佳。 The detached component (the compound represented by the formula (r1) or (r2) or the compound represented by the formula (r1-1)) preferably contains an aromatic ring (preferably the following ring aCy or hCy).

尤其,式(r1)的Rr1及Rr2中的至少1個、式(r2)的Rr4~Rr6中的至 少1個、式(r1-1)的Rr1及Rr2中的至少1個包含芳香環為較佳。作為芳香環為下述環aCy或hCy為較佳。 In particular, at least one of R r1 and R r2 of formula (r1), at least one of R r4 to R r6 of formula (r2), at least one of R r1 and R r2 of formula (r1-1) One containing an aromatic ring is preferred. The aromatic ring is preferably the following ring aCy or hCy.

作為芳香環為芳香族烴環時的具體例,可舉出苯環、萘環、蒽環、菲環、萉環、茀環、苊烯環、聯苯環、三聯苯環、茚環、二氫茚環、聯三伸苯環、四亞苯環、嵌二萘環、

Figure 108107340-A0305-02-0012-41
(chrysene)環、苝環、四氫萘環等。芳香族環可採取經由或不經由連結基L複數個連結而成之結構,例如,可舉出聯苯環、二苯甲烷環、三苯甲烷環。或者,還包括一部分上述中例示者在內,作為複數個苯環連結而成之結構可舉出下述式Ar1~Ar5者。式中從苯環的中心附近向外描繪之直線表示鍵結鍵。係指經由該單鍵與任意連結基鍵結,或者經由或不經由該單鍵與下述式(T1)的L1、L2、P或聚合物的主鏈鍵結。A1為2價的連結基,連結基L的例為較佳,可由氟原子取代之伸烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、羰基、氧原子、磺醯基、亞磺醯基、-NRN-為更佳。A2係指包含氮原子、磷原子之3價的連結基或次甲基。表示式Ar1~Ar5中,鍵結鍵任意存在2個或3個,係指依據所需的連結數在所需的部分鍵結即可。例如,從1個苯環延伸有2個鍵結鍵之態樣亦能夠作為本發明的較佳態樣而舉出。又,具有3個環之Ar2為2價的連結基之態樣亦能夠作為本發明的較佳態樣而舉出。 Specific examples when the aromatic ring is an aromatic hydrocarbon ring include a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a phenanthrene ring, a fenene ring, an acenaphthylene ring, a biphenyl ring, a terphenyl ring, an indene ring, a biphenyl ring, Hydroindene ring, three phenylene rings, tetraphenylene rings, pyrene rings,
Figure 108107340-A0305-02-0012-41
(chrysene) ring, perylene ring, tetrahydronaphthalene ring, etc. The aromatic ring may have a structure in which a plurality of links are connected via or not via a linking group L, for example, a biphenyl ring, a diphenylmethane ring, and a triphenylmethane ring. Alternatively, including some of those exemplified above, the structure in which a plurality of benzene rings are linked includes those of the following formulas Ar1 to Ar5. In the formula, a straight line drawn outward from near the center of the benzene ring indicates a bonding bond. It means bonding to any linking group via the single bond, or bonding to L 1 , L 2 , P of the following formula (T1) or the main chain of the polymer via the single bond or not. A 1 is a divalent linking group, the example of the linking group L is preferred, and an alkylene group that can be substituted by a fluorine atom (1~12 carbons is more preferable, 1~6 is more preferable, 1~3 is further preferable ), carbonyl, oxygen atom, sulfonyl, sulfinyl, -NR N - are more preferred. A 2 means a trivalent linking group or a methine group including a nitrogen atom and a phosphorus atom. In the expressions Ar1~Ar5, there are optionally 2 or 3 bonding bonds, which means that the bonding may be at the required part according to the required number of connections. For example, an aspect in which two bonds extend from one benzene ring can also be mentioned as a preferred aspect of the present invention. Moreover, the aspect in which Ar2 which has 3 rings is a divalent linking group can also be mentioned as a preferable aspect of this invention.

[化學式7]

Figure 108107340-A0305-02-0013-7
[chemical formula 7]
Figure 108107340-A0305-02-0013-7

包括上述化學式者在內,將在此例示之芳香族環的例稱作環aCy。 Examples of the aromatic ring exemplified here, including those of the above chemical formula, are referred to as ring aCy.

芳香環為芳香族雜環時,其碳數為1~12為較佳,1~6為更佳,1~5為進一步較佳。作為其具體例,可舉出噻吩環、呋喃環、吡咯環、咪唑環、吡唑環、三唑環、四唑環、噻唑環、噁唑環、吡啶環、哌嗪環、嘧啶環、噠嗪環、三

Figure 108107340-A0305-02-0013-42
環、異吲哚環、吲哚環、吲唑環、嘌呤環、喹嗪環、異喹啉環、喹啉環、酚嗪環、萘啶環、喹噁啉環、喹唑啉環、噌啉(cinnoline)環、咔唑環、吖啶環、啡嗪(phenazine)環、啡噻嗪(phenothiazine)環、啡
Figure 108107340-A0305-02-0013-43
環等。 When the aromatic ring is an aromatic heterocyclic ring, its carbon number is preferably 1-12, more preferably 1-6, and still more preferably 1-5. Specific examples thereof include thiophene ring, furan ring, pyrrole ring, imidazole ring, pyrazole ring, triazole ring, tetrazole ring, thiazole ring, oxazole ring, pyridine ring, piperazine ring, pyrimidine ring, Oxyzine ring, three
Figure 108107340-A0305-02-0013-42
ring, isoindole ring, indole ring, indazole ring, purine ring, quinazine ring, isoquinoline ring, quinoline ring, phenazine ring, naphthyridine ring, quinoxaline ring, quinazoline ring, cinnamon Cinnoline (cinnoline) ring, carbazole ring, acridine ring, phenazine (phenazine) ring, phenothiazine (phenothiazine) ring,
Figure 108107340-A0305-02-0013-43
Ring etc.

芳香族雜環可為複數個環結構經由或不經由連結基L連結而成之結構。 The aromatic heterocycle may be a structure in which a plurality of ring structures are linked via a linking group L or not.

將在此示出之芳香族雜環稱作環hCy。 The aromatic heterocycle shown here is called ring hCy.

作為脫離成分中所含之芳香環,其中苯環為較佳。 As the aromatic ring contained in the release component, a benzene ring is preferable among them.

芳香環在發揮本發明的效果之範圍內可具有取代基T。取代基T為複數個時可以相互鍵結,或者經由或不經由連結基L與式中的環鍵結而形成環。例如,烷基、烯基、芳基、芳烷基等可進一步被鹵素原子(氟原子為較佳)取代。 An aromatic ring may have a substituent T within the range which exhibits the effect of this invention. When there are plural substituents T, they may be bonded to each other, or may be bonded to the ring in the formula via or not via the linking group L to form a ring. For example, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, etc. may be further substituted with a halogen atom (preferably a fluorine atom).

又,脫離成分包含聚合性基團為較佳。作為聚合性基團,例如,能夠舉出包含乙烯性不飽和基、環氧基、環氧丙基、氧雜環丁烷基等之基團。 作為乙烯性不飽和基,可舉出包含乙烯基、烯丙基、乙烯苯基、(甲基)丙烯醯基、(甲基)丙烯醯氧基之基團。將在此例示之聚合性基團稱作聚合性基團Ps。在本發明中,其中,聚合性基團Ps包含(甲基)丙烯醯基或(甲基)丙烯醯氧基為較佳。 Moreover, it is preferable that a release component contains a polymerizable group. As a polymeric group, the group containing an ethylenically unsaturated group, an epoxy group, a glycidyl group, an oxetanyl group etc. is mentioned, for example. Examples of the ethylenically unsaturated group include groups containing vinyl, allyl, vinylphenyl, (meth)acryl, and (meth)acryloxy. The polymerizable group exemplified here is called polymerizable group Ps. In the present invention, among them, it is preferable that the polymerizable group Ps contains a (meth)acryl group or a (meth)acryloxy group.

尤其,式(r1)的Rr1及Rr2中的至少1個、式(r2)的Rr4~Rr6中的至少1個、式(r1-1)的Rr1及Rr2中的至少1個包含聚合性基團為較佳。作為聚合性基團,上述聚合性基團Ps為較佳。 In particular, at least one of R r1 and R r2 of formula (r1), at least one of R r4 to R r6 of formula (r2), at least one of R r1 and R r2 of formula (r1-1) One containing a polymerizable group is preferred. As the polymerizable group, the aforementioned polymerizable group Ps is preferable.

進而,脫離成分包含乙烯性雙鍵為較佳。尤其,藉由從聚合物脫離形成乙烯性雙鍵為較佳。藉由進行該種脫離,發揮密接力這一效果。 Furthermore, it is preferable that a release component contains an ethylenic double bond. In particular, it is preferable to form an ethylenic double bond by detachment from the polymer. By performing such separation, the effect of adhesion force is exerted.

在式(r1)或(r2)或者式(r1-1)中,Rr1、Rr2、Rr4、Rr5、Rr6為取代基時,作為該取代基可舉出後述的取代基T的例,其中,分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)或由下述式(RL-1)表示之基團為較佳。進而在式(r1)及(r2)中,至少Rr2或Rr6為由下述式(RL-1)表示之基團為特佳。 In formula (r1) or (r2) or formula (r1-1), when R r1 , R r2 , R r4 , R r5 , R r6 are substituents, examples of the substituents include the substituent T described below. For example, wherein, are independently alkyl (1~12 carbon number is better, 1~6 is better, 1~3 is further better), alkenyl (carbon number 2~12 is better, 2~ 6 is more preferable, 2~3 is further preferable), aryl group (carbon number 6~22 is preferable, 6~18 is more preferable, 6~10 is further preferable), aralkyl group (carbon number 7~ 23 is preferable, 7-19 is more preferable, 7-11 is still more preferable) or a group represented by the following formula (RL-1) is preferable. Furthermore, in formulas (r1) and (r2), at least R r2 or R r6 is particularly preferably a group represented by the following formula (RL-1).

Figure 108107340-A0305-02-0014-8
Figure 108107340-A0305-02-0014-8

LR1及LR2分別獨立地為單鍵或連結基,ArR為包含芳香環之連結基,PR為具有聚合性基團之基團。nr為0~8的整數,mr為1~4的整數。 LR1 and LR2 are each independently a single bond or a linking group, Ar R is a linking group including an aromatic ring, and PR is a group having a polymerizable group. nr is an integer of 0~8, and mr is an integer of 1~4.

LR1為1+mr價的芳香環(上述aCy或hCy的例為較佳)、脂環(下述脂環fCy的例為較佳)、直鏈或分支的烷烴結構的基團(碳數1~40為較佳,1~30為更佳,1~20為進一步較佳)、直鏈或分支的烯烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)、或直鏈或分支的炔烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)為較佳。 L R1 is 1+mr valence aromatic ring (the example of above-mentioned aCy or hCy is better), alicyclic (the example of following alicyclic fCy is better), straight chain or branched alkane structure group (carbon number 1-40 is better, 1-30 is better, 1-20 is further better), straight-chain or branched olefin structure group (carbon number 2-40 is better, 2-30 is better, 2-20 is further preferred), or a linear or branched alkyne structure group (2-40 carbons is preferred, 2-30 is more preferred, 2-20 is further preferred) is preferred.

LR2的連結基為包含下述連結基L或下述雜原子之連結基Lh的例為較佳。其中,伸烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)、羰基、氧原子或組合該等而成之基團為較佳。 It is preferable that the linking group of L R2 is a linking group Lh including the following linking group L or the following heteroatom. Among them, alkylene group (preferably 1~12 carbon number, more preferably 1~6, further preferably 1~3), arylylene group (preferably 6~22 carbon number, more preferably 6~18 , 6~10 is further preferred), (oligomeric) alkylene group (the carbon number of the alkylene group in 1 constituent unit is 1~12 is better, 1~6 is more preferably, 1~3 is It is further preferred; the number of repetitions is 1-50 is preferred, 1-40 is more preferred, 1-30 is further preferred), carbonyl group, oxygen atom or a combination thereof are preferred.

LR2可經由或不經由連結基L與LR1鍵結而形成環。 LR2 may be bonded to LR1 via or not via a linker L to form a ring.

ArR為包含芳香環之連結基。其中,nr為0時,ArR為包含芳香環之取代基。作為芳香環,上述的環aCy或hCy為較佳。ArR包含除芳香環之外的取代基時,作為其連結基可舉出下述連結基L的例,其中,伸烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、伸烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、伸炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或其組合之連結基。 ArR可經由或不經由連結基L與LR1、LR2或PR鍵結而形成環。 Ar R is a linking group including an aromatic ring. However, when nr is 0, Ar R is a substituent including an aromatic ring. As the aromatic ring, the aforementioned ring aCy or hCy is preferable. When Ar R contains a substituent other than an aromatic ring, examples of the linking group L include the following linking group L, wherein an alkylene group (preferably 1 to 24 carbons, more preferably 1 to 12 carbons, 1~6 is further preferred), alkenylene group (2~12 carbon number is preferred, 2~6 is more preferred, 2~3 is further preferred), alkynylene group (carbon number 2~12 is preferred , 2~6 is more preferable, 2~3 is further preferable), (oligomeric) alkylene group (the carbon number of the alkylene group in 1 constituent unit is 1~12 is better, 1~6 is More preferably, 1~3 is further more preferable; repeat number is 1~50 is more preferable, 1~40 is more preferable, 1~30 is further more preferable), extended aryl group (carbon number 6~22 is preferable, 6-18 are more preferred, 6-10 are further preferred) or a combination thereof. Ar R may be bonded to LR1 , LR2 or PR via a linker L or not via a linker L to form a ring.

PR為具有聚合性基團之基團,聚合性基團為上述聚合性基團Ps的例為較佳。PR可經由或不經由連結基L與LR1、LR2鍵結而形成環。 PR is a group having a polymerizable group, and the example in which the polymerizable group is the above-mentioned polymerizable group Ps is preferable. PR may be bonded to LR1 and LR2 via a linker L or not via a linker L to form a ring.

LR1、LR2、ArR、PR在發揮本發明的效果之範圍內,可具有取代基T。例如,烷基、烯基、芳基、芳烷基等可進一步被鹵素原子(氟原子為較佳)取代。 LR1 , LR2 , Ar R , and PR may have a substituent T within the range in which the effects of the present invention are exhibited. For example, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, etc. may be further substituted with a halogen atom (preferably a fluorine atom).

nr為0~8的整數,0~6為較佳,0~4為更佳,0~2為進一步較佳。mr為1~4的整數,1~2為較佳。 nr is an integer of 0-8, preferably 0-6, more preferably 0-4, and still more preferably 0-2. mr is an integer of 1-4, preferably 1-2.

作為Rr3的2價的取代基,可舉出CH2(下述第2實施形態)、CHRr8或C(Rr9)2。其中,Rr8及Rr9分別獨立地為後述之取代基T,其中,烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)為較佳。C(Rr9)2的2個Rr9可彼此相同,亦可不同。 Examples of the divalent substituent of R r3 include CH 2 (second embodiment described below), CHR r8 or C(R r9 ) 2 . Wherein, R r8 and R r9 are respectively independently the substituent T described later, wherein, alkyl (carbon number 1~12 is better, 1~6 is more preferable, 1~3 is further preferable), alkenyl ( Carbon number 2~12 is better, 2~6 is better, 2~3 is further better), alkynyl (carbon number 2~12 is better, 2~6 is better, 2~3 is further better) preferably), aryl (preferably 6-22 carbons, more preferably 6-18, further preferably 6-10), aralkyl (preferably 7-23 carbons, more preferably 7-19 , 7~11 is further preferred) is preferred. Two R r9 of C(R r9 ) 2 may be the same as or different from each other.

作為包含雜原子之連結基Lh,可舉出氧原子、硫原子、羰基、硫羰基、磺醯基、亞磺醯基、-NRN-、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)或由該等的組合而成之連結基。構成包含雜原子之連結基Lh之原子數除氫原子之外為1~100為較佳,1~70為更佳,1~50為特佳。Lh的連結原子數為1~25為較佳, 1~20為更佳,1~15為進一步較佳,1~10為更進一步較佳。再者,(低聚)伸烷氧基可為伸烷氧基亦可為低聚伸烷氧基。上述(低聚)伸烷氧基可為鏈狀、環狀,亦可為直鏈、分支。連結基為-NRN-或羧基被取代之情況等能夠形成鹽之基團時,該基團可形成鹽。 Examples of the linking group Lh containing a heteroatom include an oxygen atom, a sulfur atom, a carbonyl group, a thiocarbonyl group, a sulfonyl group, a sulfinyl group, -NR N -, (oligo)alkoxyl (one constituent unit) The carbon number of the alkylene group is preferably 1~12, more preferably 1~6, and further preferably 1~3; the number of repetitions is preferably 1~50, more preferably 1~40, 1~ 30 is further preferred) or a linking group formed by a combination of these. The number of atoms constituting the linking group Lh including heteroatoms is preferably 1-100, more preferably 1-70, and most preferably 1-50, excluding hydrogen atoms. The number of linking atoms of Lh is preferably 1-25, more preferably 1-20, still more preferably 1-15, and still more preferably 1-10. Furthermore, the (oligomeric) alkyleneoxy group may be an alkyleneoxy group or an oligomeric alkyleneoxy group. The above-mentioned (oligo)alkyleneoxy group may be chain or cyclic, straight chain or branched. When the linking group is a group capable of forming a salt such as -NR N- or a carboxyl group substituted, the group can form a salt.

作為取代基T,可舉出烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、芳基烷基(碳數7~21為較佳,7~15為更佳,7~11為進一步較佳)、烯基(碳數2~24為較佳,2~12為更佳,2~6為進一步較佳)、炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、羥基、胺基(碳數0~24為較佳,0~12為更佳,0~6為進一步較佳)、硫醇基、羧基、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、烷氧基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳氧基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、醯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、醯氧基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳醯基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、芳醯氧基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、胺甲醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、胺磺醯基(碳數0~12為較佳,0~6為更佳,0~3為進一步較佳)、磺酸基、烷基磺醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳基磺醯基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜環基(碳數1~12為較佳,1~8為更佳,2~5為進一步較佳、包含5員環或6員環為較佳)、(甲基)丙烯醯基、(甲基)丙烯醯氧基、鹵素原子(例如,氟原子、氯原子、溴原子、碘原子)、氧代基 (=O)、亞胺基(=NRN)、次烷基(=C(RN)2)等。RN為氫原子、烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳),烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、或芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳),其中,氫原子、甲基、乙基或丙基為較佳。各取代基上所含之烷基部位、烯基部位及炔基部位可為鏈狀、環狀,亦可為直鏈、分支。上述取代基T為能夠獲得取代基之基團時,還可具有取代基T。例如,烷基可成為鹵化烷基,亦可成為(甲基)丙烯醯氧基烷基、胺基烷基或羧基烷基。取代基為羧基或胺基等能夠形成鹽之基團時,該基團可形成鹽。 Examples of the substituent T include alkyl (preferably 1 to 24 carbons, more preferably 1 to 12, further preferably 1 to 6), arylalkyl (preferably 7 to 21 carbons, 7~15 is more preferable, 7~11 is further preferable), alkenyl (carbon number 2~24 is preferable, 2~12 is more preferable, 2~6 is further preferable), alkynyl (carbon number 2 ~12 is better, 2~6 is more preferable, 2~3 is further preferable), hydroxyl group, amino group (carbon number 0~24 is preferable, 0~12 is more preferable, 0~6 is further preferable ), thiol, carboxyl, aryl (preferably 6-22 carbons, more preferably 6-18, further preferably 6-10), alkoxy (preferably 1-12 carbons, 1 ~6 is more preferable, 1~3 is further preferable), aryloxy group (6~22 carbon number is preferable, 6~18 is more preferable, 6~10 is further preferable), acyl group (carbon number 2 ~12 is better, 2~6 is more preferable, 2~3 is further preferable), acyloxy group (carbon number 2~12 is preferable, 2~6 is more preferable, 2~3 is further preferable) , Aryl (preferably 7~23 carbons, more preferably 7~19, further preferably 7~11), aryloxy (preferably 7~23 carbons, more preferably 7~19 , 7-11 is further preferred), carbamoyl (carbon number 1-12 is better, 1-6 is more preferred, 1-3 is further preferred), sulfamoyl group (carbon number 0-12 preferably, 0~6 is more preferable, 0~3 is further preferable), sulfonic acid group, alkylsulfonyl group (carbon number 1~12 is preferable, 1~6 is more preferable, 1~3 is more preferably), arylsulfonyl (6~22 carbons is more preferable, 6~18 is more preferable, 6~10 is more preferable), heterocyclyl (1~12 carbons is preferable, 1 ~8 is more preferred, 2~5 is further preferred, comprising 5-membered ring or 6-membered ring is preferred), (meth)acryl group, (meth)acryloxy group, halogen atom (for example, fluorine atom, chlorine atom, bromine atom, iodine atom), oxo group (=O), imino group (=NR N ), alkylene group (=C(R N ) 2 ) and the like. R N is a hydrogen atom, an alkyl group (preferably 1-12 carbons, more preferably 1-6, further preferably 1-3), alkenyl (preferably 2-12 carbons, 2-6 More preferably, 2~3 is more preferably), alkenyl (2~12 is more preferably, 2~6 is more preferably, 2~3 is more preferably), aryl (6~22 is more preferably better, 6~18 is better, 6~10 is further better), or aralkyl (carbon number 7~23 is better, 7~19 is better, 7~11 is further better), wherein, Hydrogen atom, methyl group, ethyl group or propyl group are preferred. The alkyl moiety, alkenyl moiety, and alkynyl moiety contained in each substituent may be chain or cyclic, straight chain or branched. When the said substituent T is a group which can obtain a substituent, it may have a substituent T further. For example, the alkyl group may be a halogenated alkyl group, or may be a (meth)acryloxyalkyl group, an aminoalkyl group or a carboxyalkyl group. When the substituent is a group capable of forming a salt such as a carboxyl group or an amine group, the group can form a salt.

作為連結基L,可舉出伸烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、伸烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、伸炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、氧原子、硫原子、磺醯基、羰基、硫羰基、-NRN-及該等的組合之連結基。伸烷基可具有上述取代基T。例如,伸烷基可具有羥基。連結基L中所含之原子數除氫原子之外為1~50為較佳,1~40為更佳,1~30為進一步較佳。連結原子數係指參與連結之原子團中位於最短路程之原子數。例如,-CH2-(C=O)-O-時,參與連結之原子為6個,除氫原子之外亦為4個。另一方面,參與連結之最短原子為-C-C-O-,成為3個。 作為該連結原子數,1~24為較佳,1~12為更佳,1~6為進一步較佳。再者,上述伸烷基、伸烯基、伸炔基、(低聚)伸烷氧基可為鏈狀、環狀,亦可為直鏈、分支。連結基為-NRN-等能夠形成鹽之基團時,該基團可形成鹽。 As the linking group L, there can be mentioned alkylene (preferably 1-24 carbons, more preferably 1-12, further preferably 1-6), alkenylene (preferably 2-12 carbons, 2~6 is more preferable, 2~3 is further preferable), alkynylene (carbon number 2~12 is preferable, 2~6 is more preferable, 2~3 is further preferable), (oligomeric) stretch Alkoxy (the carbon number of the alkylene group in one constituent unit is preferably 1-12, more preferably 1-6, further preferably 1-3; preferably 1-50 repetitions, 1 ~40 is more preferable, 1~30 is further preferable), extended aryl group (6~22 carbon number is preferable, 6~18 is more preferable, 6~10 is further preferable), oxygen atom, sulfur atom, Linking groups of sulfonyl, carbonyl, thiocarbonyl, -NR N- and combinations thereof. The alkylene group may have the substituent T described above. For example, an alkylene group may have a hydroxyl group. The number of atoms contained in the linking group L other than hydrogen atoms is preferably 1-50, more preferably 1-40, and still more preferably 1-30. The number of linked atoms refers to the number of atoms located in the shortest distance among the atomic groups participating in the link. For example, in the case of -CH 2 -(C=O)-O-, there are 6 atoms participating in the connection, and 4 atoms other than hydrogen atoms. On the other hand, the shortest atoms participating in the connection are -CCO-, which becomes three. As this number of linking atoms, 1-24 are preferable, 1-12 are more preferable, and 1-6 are still more preferable. Furthermore, the above-mentioned alkylene group, alkenylene group, alkynylene group, and (oligo)alkylene group may be chain-like, cyclic, straight-chain, or branched. When the linking group is a group capable of forming a salt such as -NR N- , the group can form a salt.

脫離成分的分子量為210以上。分子量為該下限值以上,藉此烘烤中的揮發得到抑制從而較佳。脫離成分的分子量為210以上為較佳,250以上為更佳,300以上為進一步較佳。作為上限,實際上為1000以下。 The molecular weight of the released component is 210 or more. It is preferable that the molecular weight is more than the lower limit value so that volatilization during baking is suppressed. The molecular weight of the release component is preferably 210 or more, more preferably 250 or more, and still more preferably 300 or more. As an upper limit, it is actually 1000 or less.

脫離成分的表面張力為28mN/m以上為較佳,30mN/m以上為更佳,36mN/m以上為進一步較佳,38mN/m以上為更進一步較佳、40mN/m以上為還更進一步較佳、42mN/m以上為還更進一步較佳。作為上限,80mN/m以下為較佳,60mN/以下為更佳,50mN/m以下為進一步較佳。 The surface tension of the release component is preferably 28 mN/m or more, more preferably 30 mN/m or more, still more preferably 36 mN/m or more, still more preferably 38 mN/m or more, still more preferably 40 mN/m or more Better, 42 mN/m or more is still more preferable. As an upper limit, 80 mN/m or less is preferable, 60 mN/m or less is more preferable, 50 mN/m or less is still more preferable.

脫離成分的漢森溶解度參數(HSP)向量的:(i)分散項成分(d成分)為14.0~20.0為較佳,15.0~19.0為更佳,16.0~19.5為進一步較佳;(ii)極性項成分(p成分)為2.0~9.0為較佳,3.0~6.0為更佳,3.5~5.0為進一步較佳;(iii)氫鍵項成分(h成分)為3.0~12.0為較佳,4.7~7.0為更佳,5.0~6.5為進一步較佳。 The Hansen Solubility Parameter (HSP) vector from the component: (i) dispersion item component (d component) is 14.0~20.0 is better, 15.0~19.0 is better, 16.0~19.5 is further better; (ii) polarity The item component (p component) is 2.0~9.0 is better, 3.0~6.0 is better, 3.5~5.0 is further better; (iii) the hydrogen bond item component (h component) is 3.0~12.0 is better, 4.7~ 7.0 is more preferable, and 5.0-6.5 is still more preferable.

<<特定的聚合物>> <<specific polymer>>

關於在本發明中使用之聚合物(以下,有時將該聚合物稱作特定的聚合物),使包含該特定的聚合物之壓印用下層膜形成組成物成為膜狀並在80~250℃下烘烤時,能夠廣泛使用使脫離成分從聚合物脫離之聚合物。更具體而言,特定的聚合物為在側鏈具有成為脫離成分之基團之聚合物為較佳。 Regarding the polymer used in the present invention (hereinafter, the polymer may be referred to as a specific polymer), the imprint underlayer film-forming composition containing the specific polymer is made into a film and the temperature is 80 to 250 When baking at ℃, polymers that detach the detachment component from the polymer can be widely used. More specifically, it is preferable that the specific polymer has a group serving as a detachment component in a side chain.

在本發明中,構成聚合物之所有構成單元中的較佳為30質量%以上、更佳為40質量%以上能夠使脫離成分脫離的構成單元。上限值並無特別限定,可為100質量%。再者,本發明中,無需使具有能夠使脫離成分脫離的基團之構成單元在80~250℃的加熱下全部脫離,只要至少脫離70質量%即可,脫離80質量%以上為較佳,脫離90質量%以上為進一步較佳,脫離99質量%以上為更進一步較佳。 In the present invention, among all the structural units constituting the polymer, preferably 30% by mass or more, more preferably 40% by mass or more, are structural units capable of detaching the detachment component. The upper limit is not particularly limited, and may be 100% by mass. Furthermore, in the present invention, it is not necessary to detach all the constituent units having a group capable of detachment from the detachment component under heating at 80 to 250° C., as long as at least 70% by mass is detached, preferably 80% by mass or more. It is still more preferable to deviate from 90 mass % or more, and it is still more preferable to deviate from 99 mass % or more.

又,本發明中,使特定的聚合物的質量的較佳為20質量%以上、更佳為30質量%以上、進一步較佳為50質量%以上的脫離成分脫離。上限值並無特別限定,但是,例如為80質量%以下,70質量%以下為較佳,60質量%以下為更佳,50質量%以下為進一步較佳。 In addition, in the present invention, preferably 20% by mass or more, more preferably 30% by mass or more, and still more preferably 50% by mass or more of the detachment component of the mass of the specific polymer are desorbed. The upper limit is not particularly limited, but is, for example, 80% by mass or less, preferably 70% by mass or less, more preferably 60% by mass or less, and still more preferably 50% by mass or less.

特定的聚合物包含由下述式(R-1)~(R-4)中的任一個表示之取代基為較佳。 It is preferable that the specific polymer contains a substituent represented by any one of the following formulas (R-1) to (R-4).

Figure 108107340-A0305-02-0020-9
Figure 108107340-A0305-02-0020-9

式中,R1~R3分別獨立地為1價的取代基,R4~R12分別獨立地為氫原子或1價的取代基,X表示向聚合物的主鏈鍵結之位置。 In the formula, R 1 to R 3 are each independently a monovalent substituent, R 4 to R 12 are each independently a hydrogen atom or a monovalent substituent, and X represents a bonding position to the main chain of the polymer.

在式(R-2)~(R-4)中,R4~R6、R7~R9、R10~R12不均為氫原子為較佳。包含與式(R-1)中的氧原子鍵結之碳原子、亦即R1~R3被取 代之碳原子(以下,在各式中將該位置的碳原子稱作α碳原子)之基團為二級烷基或三級烷基為較佳。在式(R-2)中亦相同,包含α碳原子之基團為二級烷基或三級烷基為較佳。與此不同,包含式(R-3)及(R-4)中的α碳原子之基團為一級烷基或二級烷基為較佳。 In the formulas (R-2)~(R-4), it is preferable that R 4 ~R 6 , R 7 ~R 9 , and R 10 ~R 12 are not all hydrogen atoms. Contains a carbon atom bonded to the oxygen atom in the formula (R-1), that is, a carbon atom in which R 1 to R 3 is substituted (hereinafter, the carbon atom at this position is referred to as an α carbon atom in each formula) The group is preferably a secondary or tertiary alkyl group. Also in the formula (R-2), it is preferable that the group containing an α carbon atom is a secondary alkyl group or a tertiary alkyl group. On the other hand, it is preferable that the group containing the α-carbon atom in the formulas (R-3) and (R-4) is a primary or secondary alkyl group.

R1~R3的至少1個係取代基為較佳,至少2個係取代基為較佳。R4~R6的至少1個係取代基為較佳,至少2個係取代基為較佳。R7~R9的至少1個係取代基為較佳,2個係氫原子且1個係取代基為較佳。R10~R12的至少1個係取代基為較佳,2個係氫原子且1個係取代基為較佳。R1~R3、R4~R6、R7~R9、R10~R12為取代基時,作為該取代基,可舉出與上述Rr1相同含義的基團,較佳範圍亦相同。 It is preferable that at least one of R 1 to R 3 is a substituent, and it is more preferable that at least two are substituents. It is preferable that at least one of R 4 to R 6 is a substituent, and it is more preferable that at least two are substituents. It is preferable that at least one of R 7 to R 9 is a substituent, and it is more preferable that two of them are hydrogen atoms and one of them is a substituent. It is preferable that at least one of R 10 to R 12 is a substituent, and it is more preferable that two of them are hydrogen atoms and one of them is a substituent. When R 1 to R 3 , R 4 to R 6 , R 7 to R 9 , and R 10 to R 12 are substituents, the substituents include groups with the same meaning as R r1 above, and the preferred range is also same.

R1~R3、R4~R6、R7~R9、R10~R12可相互鍵結而形成環。R1~R12為取代基時,在發揮本發明的效果之範圍內,可進一步具有取代基T。例如,烷基、烯基、芳基、芳烷基等可進一步被鹵素原子(氟原子為較佳)取代。 R 1 to R 3 , R 4 to R 6 , R 7 to R 9 , and R 10 to R 12 may be bonded to each other to form a ring. When R 1 to R 12 are substituents, they may further have a substituent T within the range of exerting the effects of the present invention. For example, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, etc. may be further substituted with a halogen atom (preferably a fluorine atom).

本發明中,式中的C-O鍵從包含由式(R-1)~(R-4)中的任一個表示之取代基之聚合物分解,由式(r1)或(r2)或者式(r1-1)表示且分子量210以上的化合物從該聚合物脫離為較佳。 In the present invention, the C-O bond in the formula is decomposed from the polymer comprising the substituent represented by any one of the formulas (R-1) to (R-4), and the formula (r1) or (r2) or the formula (r1 -1) means that a compound with a molecular weight of 210 or more is detached from the polymer.

尤其,式(r1)的Rr1及Rr2被取代之碳原子(將Rr3中所含之碳原子設為1位時2位的碳原子)在脫離前係式(R-1)的R1~R3被取代之碳原子(α碳原子)為較佳。又,式(r1)的上述2位的碳原子在脫離前係式(R-2)的R4~R6被取代之碳原子為較佳。關於式(r2),Rr4~Rr6被取代之三級碳原子在脫離前係上述各α碳原子亦即式(R-1)的R1~R3被取代之碳原子或式(R-2)的R4~R6被取代之碳原子為較佳。 In particular, the carbon atom substituted by R r1 and R r2 of the formula (r1) (the carbon atom at the second position when the carbon atom contained in R r3 is set as the first position) is the R of the formula (R-1) before leaving 1 to R 3 are preferably substituted carbon atoms (α carbon atoms). Also, the carbon atom at the 2-position of the formula (r1) is preferably a carbon atom substituted by R 4 to R 6 of the formula (R-2) before leaving. Regarding formula (r2), the tertiary carbon atoms substituted by R r4 ~ R r6 are the carbon atoms substituted by R 1 ~ R 3 of formula (R-1) or formula (R -2) R 4 ~ R 6 are preferably substituted carbon atoms.

在式(R-1)中,以在C-O的位置分解,且在脫離成分側的脫離位置(α碳原子的位置)形成雙鍵的方式,R1~R3中的至少1個係烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳,乙基為更佳,甲基為進一步較佳。在式(R-2)中亦相同,R4~R6中的至少1個係烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳,乙基為更佳,甲基為進一步較佳。 In formula (R-1), at least one of R 1 to R 3 is an alkyl group in such a way that it decomposes at the position of CO and forms a double bond at the detachment position (position of α carbon atom) on the detachment side of the component (C1-12 is preferred, 1-6 is more preferred, 1-3 is further preferred) is preferred, ethyl is more preferred, and methyl is further preferred. It is also the same in formula (R-2), at least one of R4 ~ R6 is an alkyl group (preferably 1~12 carbons, more preferably 1~6, more preferably 1~3) is Preferably, ethyl is more preferred, and methyl is further preferred.

又,特定的聚合物包含聚合性基團為較佳,聚合性基團係聚合性基團Ps為較佳,包含(甲基)丙烯醯基為更佳。可以由具有能夠使脫離成分脫離的基團之構成單元具有聚合性基團,亦可以由其他構成單元具有聚合性基團。本發明中,至少是除具有能夠使脫離成分脫離的基團之構成單元之外的構成單元具有聚合性基團為較佳。 Moreover, it is preferable that a specific polymer contains a polymeric group, it is preferable that a polymeric group is a polymeric group Ps, and it is more preferable that it contains a (meth)acryl group. The polymerizable group may be contained in a structural unit having a group capable of releasing a releasing component, or may be contained in another structural unit. In the present invention, it is preferable that at least the structural units other than the structural unit having a group capable of releasing the releasing component have a polymerizable group.

在特定的聚合物中,具有聚合性基團之構成單元的比例為所有構成單元的10~100莫耳%為較佳,50~100莫耳%為更佳,80~100莫耳%為進一步較佳。 In a specific polymer, the proportion of constituent units having a polymerizable group is preferably 10 to 100 mole % of all constituent units, more preferably 50 to 100 mole %, and further preferably 80 to 100 mole %. better.

又,特定的聚合物包含芳香環為較佳,芳香環為環aCy或hCy為較佳。可以由具有能夠使脫離成分脫離的基團之構成單元具有芳香環,亦可以由其他構成單元具有芳香環。本發明中,至少是具有能夠使脫離成分脫離的基團之構成單元具有芳香環為較佳。 Also, it is preferable that the specific polymer contains an aromatic ring, and it is preferable that the aromatic ring is ring aCy or hCy. An aromatic ring may be included in a structural unit having a group capable of releasing a releasing component, or an aromatic ring may be included in another structural unit. In the present invention, at least a structural unit having a group capable of detaching a detachment component preferably has an aromatic ring.

在特定的聚合物中,包含芳香環之構成單元的比例為所有構成單元的10~100莫耳%為較佳,40~100莫耳%為更佳。 In a specific polymer, the proportion of structural units including an aromatic ring is preferably 10 to 100 mol%, more preferably 40 to 100 mol%, of all the structural units.

特定的聚合物的種類並無特別限定,但是,例如,可舉出(甲基)丙烯酸酯樹脂、聚烯烴樹脂、聚苯乙烯樹脂、酚樹脂(酚醛清漆樹脂)、環 狀聚烯烴樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚酯樹脂、聚胺酯樹脂及聚矽氧樹脂等。 The type of specific polymer is not particularly limited, but, for example, (meth)acrylate resin, polyolefin resin, polystyrene resin, phenol resin (novolac resin), cyclo Polyolefin resin, polyamide resin, polyimide resin, polyacetal resin, polycarbonate resin, polyester resin, polyurethane resin and silicone resin, etc.

特定的聚合物包含由下述式(1)~式(6)中任一個表示之構成單元中的至少1種為進一步較佳。 It is still more preferable that a specific polymer contains at least 1 sort(s) of the structural unit represented by any one of following formula (1) - a formula (6).

Figure 108107340-A0305-02-0023-10
Figure 108107340-A0305-02-0023-10

RP4為氫原子或甲基。 R P4 is a hydrogen atom or a methyl group.

RP1表示能夠使由式(r1)或(r2)表示之化合物或由式(r1-1)表示之化合物脫離的基團,包含由式(R-1)~(R-4)表示之基團之基團為較佳。在RP1中,連結基可介於式(R-1)~(R-4)的X與主鏈的原子之間。作為連結基可舉出連結基L的例。再者,此時的連結基可為3價以上。該情況下,成為聚合物的構成單元經由連結基伴有複數個由式(R-1)~(R-4)表示之基團。作為3價以上的連結基,可舉出芳香環(aCy、hCy)結構的基團、烷烴結構的基團(碳數1~40為較佳,1~30為更佳,1~20為進一步較佳)、烯烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)、炔烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)或該等的組合之基團或者該等與連結基Lh的組合之基團。烷烴結構的基團、烯烴結構的基團、炔烴結構的基團可為鏈狀、環狀,亦可為直鏈、分支。以下將該3價以上的連結基稱作連結基Lm。 R P1 represents a group capable of leaving a compound represented by formula (r1) or (r2) or a compound represented by formula (r1-1), including groups represented by formulas (R-1) to (R-4) A group of groups is preferred. In R P1 , the linking group may be between X of the formulas (R-1)~(R-4) and the atoms of the main chain. As a linking group, the example of linking group L is mentioned. In addition, the linking group at this time may be trivalent or more. In this case, the structural unit to be a polymer is accompanied by a plurality of groups represented by formulas (R-1) to (R-4) via a linking group. As the linking group having a valence of 3 or more, groups having an aromatic ring (aCy, hCy) structure and alkane structure groups (preferably 1 to 40 carbon atoms, more preferably 1 to 30 carbon atoms, further preferably 1 to 20 carbon atoms) preferably), groups of alkene structure (preferably 2 to 40 carbons, more preferably 2 to 30, further preferably 2 to 20), groups of alkyne structures (preferably 2 to 40 carbons , 2 to 30 are more preferred, 2 to 20 are further preferred) or a combination of these groups or a combination of these and the linking group Lh. The group of alkane structure, the group of alkene structure, and the group of alkyne structure may be chain-like, cyclic, straight-chain or branched. Hereinafter, the linking group having a valence of more than three is referred to as linking group Lm.

式(1)~式(6)中,取代基RP1在相同的構成單元可被取代2個以上。例如,在式(1)、(2)中,在苯環上2個以上的RP1被取代者亦可作為本發明的較佳實施形態而舉出。 In the formulas (1) to (6), the substituent R P1 may be substituted with two or more in the same constitutional unit. For example, in formulas (1) and (2), those in which two or more R P1 are substituted on the benzene ring can also be cited as preferred embodiments of the present invention.

式(1)~(6)中的聚合物的主鏈及取代基RP1在發揮本發明的效果之範圍內可具有取代基T。 The main chain and substituent R P1 of the polymer in formula (1)-(6) may have a substituent T in the range which exhibits the effect of this invention.

上述特定的聚合物係共聚物亦較佳。共聚成分包含由下述式(1-1)~(1-6)中的任一個表示之構成單元(以下,有時稱作其他構成單元)的至少一種為較佳。 The above-mentioned specific polymer-based copolymers are also preferable. It is preferable that a copolymerization component contains at least 1 sort(s) of the structural unit (it may be called another structural unit hereinafter) represented by any one of following formula (1-1)-(1-6).

Figure 108107340-A0305-02-0024-11
Figure 108107340-A0305-02-0024-11

式(1-1)~式(1-6)中,取代基RP2分別獨立地為包含聚合性基團之取代基,RP4為氫原子或甲基。RP2中所含之聚合性基團係上述Ps為較佳。RP2可在聚合性基團與主鏈之間伴有連結基,2價的連結基時可舉出連結基L的例,3價以上的連結基時可舉出連結基Lm的例。式(1-1)~式(1-6)中的RP2為2個以上時,亦即成為(RP2)n(n為1以上的自然數)時,複數個RP2可相互鍵結而形成環。又,RP2可與主鏈鍵結而形成環。又,在發揮本發明的效果之範圍內,在式(1-1)~式(1-6)的主鏈及取代基RP2上,取代基T可被取代。 In the formulas (1-1) to (1-6), the substituents R P2 are each independently a substituent containing a polymerizable group, and R P4 is a hydrogen atom or a methyl group. It is preferable that the polymerizable group contained in R P2 is the above-mentioned Ps. R P2 may have a linking group between the polymerizable group and the main chain. In the case of a divalent linking group, an example of the linking group L is given, and in the case of a trivalent or higher linking group, an example of the linking group Lm is given. When there are two or more R P2 in formulas (1-1) to (1-6), that is, when it becomes (R P2 ) n (n is a natural number greater than or equal to 1), a plurality of R P2 can be bonded to each other And form a ring. Also, R P2 may be bonded to the main chain to form a ring. In addition, substituent T may be substituted on the main chain and substituent R P2 of formula (1-1) to formula (1-6) within the range of exerting the effect of the present invention.

作為RP2,下述式(T2)為較佳。RP2的式量為80以上且1000以下為 較佳,100以上且800以下為更佳,150以上且600以下為進一步較佳。 As R P2 , the following formula (T2) is preferable. The formula weight of R P2 is preferably from 80 to 1000, more preferably from 100 to 800, and still more preferably from 150 to 600.

-(L4)n6-(P)n7......(T2) -(L4) n6 -(P) n7 ......(T2)

L4為上述連結基L或Lm,其中,伸烷基、伸芳基、(低聚)伸烷氧基、羰基、氧原子、烷烴結構的基團、烯烴結構的基團、芳基結構的基團、該等的組合之連結基為較佳。n6為0~6的整數。P為聚合性基團Ps。n7為1~6的整數,1或2為較佳。再者,n7為3以上時,末端的L4成為4價以上的連結基且所有的P可被取代,但亦可在2個以上的L4取代P。 L4 is the above-mentioned linking group L or Lm, wherein, alkylene, aryl, (oligo)alkoxyl, carbonyl, oxygen atom, group of alkane structure, group of alkene structure, group of aryl structure A group and a linking group of a combination of these are preferred. n6 is an integer of 0~6. P is a polymerizable group Ps. n7 is an integer of 1 to 6, preferably 1 or 2. Furthermore, when n7 is 3 or more, the terminal L 4 becomes a linking group having a valency of 4 or more and all Ps may be substituted, but two or more L 4s may be substituted for P.

特定的聚合物包含由式(1)表示之構成單元時,作為其他構成單元,由式(1-1)表示之構成單元為較佳。關於式(2)~式(6),亦同樣地分別包含由式(1-2)~式(1-6)表示之構成單元為較佳。 When a specific polymer contains the structural unit represented by formula (1), as another structural unit, the structural unit represented by formula (1-1) is preferable. Also about formula (2) - formula (6), it is preferable to contain the structural unit represented by formula (1-2) - formula (1-6) respectively similarly.

特定的聚合物還包含沒有聚合性基團之構成單元(有時稱作“另一其他構成單元”)亦較佳。另一其他構成單元具有在上述其他構成單元中規定之式(1-1)~(1-6)的骨架為較佳。其中,取代基RP2成為沒有聚合性基團的取代基RP3。作為另一其他構成單元之式(1-1)、(1-2)、(1-4)、(1-6)中的RP2的2個以上可被取代為環結構基團。再者,另一其他構成單元中,在發揮本發明的效果之範圍內可在其主鏈的部分及RP3取代取代基T。 It is also preferable that the specific polymer further includes a structural unit having no polymerizable group (sometimes referred to as "another structural unit"). Another structural unit preferably has a skeleton of the formulas (1-1) to (1-6) defined in the above other structural units. However, the substituent R P2 is a substituent R P3 having no polymerizable group. Two or more of R P2 in formulas (1-1), (1-2), (1-4), and (1-6) which are another structural unit may be substituted with a ring structural group. Furthermore, in another structural unit, the substituent T may be substituted in a part of the main chain and R P3 within the range in which the effect of the present invention is exhibited.

RP3係下述式(T3)為較佳。RP3的式量為80以上且1000以下為較佳,100以上且800以下為更佳,150以上且600以下為進一步較佳。 R P3 is preferably the following formula (T3). The formula weight of R P3 is preferably from 80 to 1000, more preferably from 100 to 800, and still more preferably from 150 to 600.

-(L5)n8-(T1)n9......(T3) -(L5) n8 -(T1) n9 ......(T3)

L5為上述連結基L或Lm,其中,伸烷基、伸芳基、(低聚)伸烷氧基、羰基、氧原子、烷烴結構的基團、烯烴結構的基團、芳基結構的基團、該等的組合之連結基為較佳。T1為上述取代基T,例如可舉出烷基、芳基、烷氧 基、醯基等。n9為1~6的整數,1或2為較佳。n9為3以上時,末端的L5成為4價以上的連結基且所有的T1可被取代,但亦可在2個以上的L5取代T1 L5 is the above linking group L or Lm, wherein, alkylene, arylylene, (oligo)alkoxyl, carbonyl, oxygen atom, alkane structure group, alkene structure group, aryl structure group A group and a linking group of a combination of these are preferred. T1 is the above-mentioned substituent T, for example, an alkyl group, an aryl group, an alkoxy group, an acyl group, etc. are mentioned. n9 is an integer of 1 to 6, preferably 1 or 2. When n9 is 3 or more, the terminal L 5 becomes a linking group having a valency of 4 or more and all T 1s may be substituted, but T 1 may be substituted at two or more L 5s .

在式T2,T3中,L4、L5、P、T1在發揮本發明的效果之範圍內可具有上述取代基T。例如,烷烴結構的基團、烯烴結構的基團、芳基結構的基團等可進一步被鹵素原子(氟原子為較佳)取代。 In the formulas T2 and T3, L 4 , L 5 , P, and T 1 may have the above-mentioned substituent T within the range in which the effects of the present invention are exerted. For example, groups with alkane structure, groups with alkene structure, groups with aryl structure, etc. may be further substituted with halogen atoms (preferably fluorine atoms).

在特定的聚合物中,由式(1)~式(6)中的任一個表示之構成單元可構成整個聚合物(構成比率100莫耳%的均聚物),亦可成為與其他構成單元或另一其他構成單元的共聚物。 In a specific polymer, the structural unit represented by any one of the formulas (1) to (6) can constitute the entire polymer (a homopolymer with a constituent ratio of 100 mol%), or can be combined with other structural units Or another copolymer of other constituent units.

在特定的聚合物中,以莫耳比基準計,具有能夠將脫離成分脫離的基團之構成單元(例如,由式(1)~式(6)表示之構成單元)/其他構成單元(具有聚合性基團之構成單元)/另一其他構成單元的構成比率為10~100/0~80/0~50為較佳,30~100/0~70/0~30為更佳,50~100/0~50/0~10為更較佳,可為50~90/10~50/0~10。 In a specific polymer, on a molar ratio basis, there are structural units (for example, structural units represented by formula (1) to formula (6))/other structural units (with The constituent unit of the polymerizable group)/another constituent unit ratio is 10~100/0~80/0~50 is better, 30~100/0~70/0~30 is more preferable, 50~ 100/0~50/0~10 is more preferable, and may be 50~90/10~50/0~10.

在特定的聚合物中,可分別僅包含1種或2種以上具有能夠將脫離成分脫離的基團之構成單元、其他構成單元(具有聚合性基團之構成單元)、另一其他構成單元。包含2種以上時,總計成為上述比例為較佳。 In a specific polymer, only one or two or more structural units having a group capable of releasing a releasing component, another structural unit (a structural unit having a polymerizable group), and another other structural unit may be included. When containing 2 or more types, it is preferable that it becomes the said ratio in total.

又,本發明中,在設為實際上不包含具有能夠將脫離成分脫離的基團之構成單元及除具有聚合性基團之構成單元之外的另一其他構成單元之結構亦較佳。實際上不包含係指例如為所有構成單元的5質量%以下,3質量%以下為較佳,1質量%以下為進一步較佳。 In addition, in the present invention, it is also preferable to have a structure that does not actually include a structural unit having a group capable of releasing a releasing component and another structural unit other than a structural unit having a polymerizable group. Substantially not containing means, for example, 5% by mass or less of all structural units, preferably 3% by mass or less, and more preferably 1% by mass or less.

特定聚合物的重量平均分子量為4,000以上為較佳,5,000以上為 更佳,7,000以上為進一步較佳,10,000以上為更較佳。作為上限,2,000,000以下為較佳,1,500,000以下為更佳,1,000,000以下為進一步較佳。重量平均分子量的測量方法設為藉由由下述實施例表示之方法者。 The weight average molecular weight of the specific polymer is preferably 4,000 or more, and 5,000 or more is More preferably, 7,000 or more is still more preferable, and 10,000 or more is still more preferable. The upper limit is preferably at most 2,000,000, more preferably at most 1,500,000, and further preferably at most 1,000,000. The measurement method of the weight average molecular weight is set by the method shown by the following example.

壓印用下層膜形成組成物中的特定聚合物的含有率為0.1質量%以上為較佳,0.5質量%以上為更佳,1.0質量%以上為進一步較佳,1.5質量%以上為更較佳。作為上限,10質量%以下為較佳,7質量%以下為更佳,5質量%以下為進一步較佳,4質量%以下為更較佳,3質量%以下為進一步更較佳。藉由將該量設為上述下限值以上,能夠適當地發揮基於摻合聚合物而引起之效果,又,容易製作均勻的薄膜。另一方面,設為上述上限值以下,藉此適當地發揮使用溶劑之效果,容易在較寬的面積上形成均勻的膜。 The content of the specific polymer in the underlayer film-forming composition for imprinting is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, still more preferably 1.0% by mass or more, and more preferably 1.5% by mass or more . The upper limit is preferably at most 10% by mass, more preferably at most 7% by mass, still more preferably at most 5% by mass, still more preferably at most 4% by mass, and still more preferably at most 3% by mass. By making this amount more than the said lower limit, the effect by blending a polymer can be exhibited suitably, and it becomes easy to manufacture a uniform thin film. On the other hand, by making it below the said upper limit, the effect of using a solvent is exhibited suitably, and it becomes easy to form a uniform film over a wide area.

又,特定的聚合物相對於壓印用下層膜形成組成物中的不揮發性成分(係指除組成物中的溶劑之固體成分)之含有率為90質量%以上為較佳,95質量%以上為更佳,99質量%以上為進一步較佳。作為上限值,為100質量%。藉由將該量設為上述下限值以上,能夠適當地發揮基於摻合聚合物而引起之效果,又,容易製作均勻的薄膜。另一方面,設為上述上限值以下,藉此適當地發揮使用溶劑之效果,容易在較寬的面積上形成均勻的膜。 In addition, the content of the specific polymer relative to the non-volatile component (referring to the solid content excluding the solvent in the composition) in the imprint underlayer film-forming composition is preferably 90% by mass or more, and 95% by mass The above is more preferable, and 99 mass % or more is still more preferable. As an upper limit, it is 100 mass %. By making this amount more than the said lower limit, the effect by blending a polymer can be exhibited suitably, and it becomes easy to manufacture a uniform thin film. On the other hand, by making it below the said upper limit, the effect of using a solvent is exhibited suitably, and it becomes easy to form a uniform film over a wide area.

特定聚合物可以僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。 Only 1 type may be used for a specific polymer, and 2 or more types may be used. When using 2 or more types, it is preferable that a total amount becomes the said range.

在上述聚合物中,形成脫離成分之取代基RP1能夠藉由常規方法導入主鏈。 In the above-mentioned polymer, the substituent R P1 that forms the detachment component can be introduced into the main chain by a conventional method.

<<脫離反應促進劑或其前驅物>> <<Detachment reaction accelerator or its precursor>>

脫離反應促進劑係藉由在系統內與特定的聚合物共存,從而藉由既定 的契機作用於特定的聚合物,而促進將脫離成分從特定的聚合物脫離的反應之化合物。脫離反應促進劑係具有酸性官能基團或具有鹼性官能基團之化合物。脫離反應促進劑在組成物中作為其前驅物存在為較佳。作為前驅物,例如,可舉出藉由賦予熱或光等來自外部的能量進行反應,而轉換成脫離反應促進劑化合物之化合物。具體而言,可舉出熱酸產生劑、光酸產生劑、熱鹼產生劑、光鹼產生劑等,熱酸產生劑、光酸產生劑為較佳,熱酸產生劑為更佳。 By co-existing with a specific polymer in the system, the detachment reaction accelerator can pass through the given A compound that acts on a specific polymer to promote a reaction in which a detachment component is detached from a specific polymer. The detachment reaction accelerator is a compound having an acidic functional group or a basic functional group. It is preferable that the desorption reaction accelerator exists as its precursor in the composition. As a precursor, for example, a compound that reacts by applying external energy such as heat or light, and converts into a compound that is released from a reaction accelerator compound is mentioned. Specifically, thermal acid generators, photoacid generators, thermal base generators, photobase generators, etc. are mentioned, thermal acid generators and photoacid generators are preferable, and thermal acid generators are more preferable.

作為脫離反應促進劑,具有酸性官能基團時,脫離促進劑的pKa為2以下為較佳,1以下為更佳,0以下為進一步較佳。作為下限值,並無特別限定,但是,例如可為-10以上。具有鹼性官能基團時,其共軛酸的pKa為5以上為較佳,7以上為更佳,8以上為進一步較佳。作為上限值,並無特別限定,但是,例如可為15以下。 When the detachment accelerator has an acidic functional group, the pKa of the detachment accelerator is preferably 2 or less, more preferably 1 or less, and still more preferably 0 or less. Although it does not specifically limit as a lower limit, For example, -10 or more may be sufficient. When having a basic functional group, the pKa of the conjugate acid is preferably 5 or more, more preferably 7 or more, and still more preferably 8 or more. Although it does not specifically limit as an upper limit, For example, it may be 15 or less.

本發明中,作為脫離反應促進劑或其前驅物的具體例,能夠使用日本特開2014-047329號公報的0012、0017、0026~0037段中記載的酸增殖劑、0038~0040中記載的光酸產生劑、0041段中記載的熱酸產生劑、日本特開2012-237776號公報的0029~0066段中記載的光鹼增殖劑、0073~0087段中記載的光鹼產生劑、0087~0090段中記載的熱鹼產生劑、日本專利第5687442號公報的0012~0015、0023~0029段中記載的光酸產生劑、國際公開第2009/123122號的0033~0075段中記載的鹼產生劑、日本特開2011-236416號公報的0038~0069中記載的鹼產生劑,該等內容編入本說明書中。 In the present invention, as specific examples of the desorption reaction accelerator or its precursor, the acid proliferators described in paragraphs 0012, 0017, 0026 to 0037 of JP-A-2014-047329 , and the photoproliferators described in 0038 to 0040 can be used. Acid generators, thermal acid generators described in paragraph 0041, photobase multiplying agents described in paragraphs 0029 to 0066 of JP-A-2012-237776, photobase generators described in paragraphs 0073 to 0087, and photobase generators described in paragraphs 0087 to 0090 Thermal base generators described in paragraphs, photoacid generators described in paragraphs 0012 to 0015 and 0023 to 0029 of Japanese Patent No. 5687442, base generators described in paragraphs 0033 to 0075 of International Publication No. 2009/123122 , the base generating agent described in 0038-0069 of JP-A-2011-236416, and these contents are incorporated in this specification.

脫離反應促進劑或其前驅物的含量為不揮發性成分的0.1質量% 以上為較佳,1.0質量%以上為更佳,2.0質量%以上為進一步較佳。作為上限,實際上為10.0質量%以下,可為5.0質量%以下。 The content of the detachment reaction accelerator or its precursor is 0.1% by mass of the non-volatile components The above is preferable, 1.0 mass % or more is more preferable, and 2.0 mass % or more is still more preferable. As an upper limit, it is actually 10.0 mass % or less, and may be 5.0 mass % or less.

脫離反應促進劑或其前驅物可僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。 The desorption reaction accelerator or its precursor may be used only by 1 type, and may use 2 or more types. When using 2 or more types, it is preferable that a total amount becomes the said range.

<<伸烷基二醇化合物>> <<Alkylene glycol compound>>

壓印用下層膜形成組成物可以包含伸烷基二醇化合物。伸烷基二醇化合物具有3~1000個伸烷基二醇構成單元為較佳,具有4~500個為更佳,具有5~100個為進一步較佳,具有5~50個為更較佳。伸烷基二醇化合物的重量平均分子量(Mw)為150~10000為較佳,200~5000為更佳,300~3000為進一步較佳,300~1000為更較佳。 The composition for forming an underlayer film for imprint may contain an alkylene glycol compound. The alkylene glycol compound preferably has 3 to 1,000 alkylene glycol constituent units, more preferably 4 to 500, still more preferably 5 to 100, and more preferably 5 to 50 . The weight average molecular weight (Mw) of the alkylene glycol compound is preferably 150 to 10,000, more preferably 200 to 5,000, further preferably 300 to 3,000, and still more preferably 300 to 1,000.

伸烷基二醇化合物例示有聚乙二醇、聚丙二醇、該等單或二甲基醚、單或二辛基醚、單或二壬醚、單或二癸醚、單硬脂酸酯、單有酸酯、單己二酸酯、單琥珀酸酯,聚乙二醇、聚丙二醇為較佳。 The alkylene glycol compound is exemplified by polyethylene glycol, polypropylene glycol, such mono or dimethyl ether, mono or dioctyl ether, mono or dinonyl ether, mono or didecyl ether, monostearate, Monoacid esters, monoadipate, monosuccinate, polyethylene glycol and polypropylene glycol are preferred.

伸烷基二醇化合物在23℃下的表面張力為38.0mN/m以上為較佳,40.0mN/m以上為更佳。表面張力的上限並無特別限定,例如為48.0mN/m以下。藉由摻合如上化合物,能夠提高設置在下層膜正上方之壓印用硬化性組成物的潤濕性。 The surface tension of the alkylene glycol compound at 23°C is preferably at least 38.0 mN/m, more preferably at least 40.0 mN/m. Although the upper limit of surface tension is not specifically limited, For example, it is 48.0 mN/m or less. By blending the above compounds, the wettability of the imprint curable composition provided directly above the underlayer film can be improved.

當含有伸烷基二醇化合物時,為不揮發性成分的40質量%以下,30質量%以下為較佳,20質量%以下為更佳,1~15質量%為進一步較佳。 When containing an alkylene glycol compound, it is 40 mass % or less of a nonvolatile component, Preferably it is 30 mass % or less, More preferably, it is 20 mass % or less, More preferably, it is 1-15 mass %.

伸烷基二醇化合物可僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。 The alkylene glycol compound may be used alone or in combination of two or more. When using 2 or more types, it is preferable that a total amount becomes the said range.

<<聚合起始劑>> <<polymerization initiator>>

作為不揮發性成分,可包含聚合起始劑。作為聚合起始劑,可舉出熱聚合起始劑或光聚合起始劑等,但從提高與壓印用硬化性組成物的交聯反應性之觀點而言,光聚合起始劑為較佳。作為光聚合起始劑,自由基聚合起始劑、陽離子聚合起始劑為較佳,自由基聚合起始劑為更佳。又,在本發明中,光聚合起始劑可併用複數種。 A polymerization initiator may be contained as a nonvolatile component. Examples of the polymerization initiator include thermal polymerization initiators and photopolymerization initiators, but from the viewpoint of improving crosslinking reactivity with the curable composition for imprints, photopolymerization initiators are preferred. good. As a photopolymerization initiator, a radical polymerization initiator and a cationic polymerization initiator are preferable, and a radical polymerization initiator is more preferable. Moreover, in this invention, several types of photoinitiators can be used together.

作為光聚合起始劑,能夠任意使用公知的化合物。例如,可舉出鹵化烴衍生物(例如,包含三

Figure 108107340-A0305-02-0030-44
骨架之化合物、包含噁二唑骨架之化合物、包含三鹵化甲基之化合物等)、醯基膦氧化物等醯基膦化合物、六芳基雙咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物(thio compound)、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮化合物、茂金屬化合物、有機硼化合物、鐵-芳烴錯合物等。該等中肟化合物為較佳。關於該等的詳細內容,能夠參閱日本特開2016-027357號公報的0165~0182段的記載,該內容編入本說明書中。 As the photopolymerization initiator, any known compound can be used arbitrarily. For example, halogenated hydrocarbon derivatives (for example, containing three
Figure 108107340-A0305-02-0030-44
Skeleton compounds, compounds containing oxadiazole skeletons, compounds containing trihalogenated methyl groups, etc.), acylphosphine compounds such as acylphosphine oxides, hexaarylbiimidazoles, oxime compounds such as oxime derivatives, organic peroxides , sulfur compound (thio compound), ketone compound, aromatic onium salt, ketoxime ether, aminoacetophenone compound, hydroxyacetophenone, azo compound, azide compound, metallocene compound, organoboron compound, iron - Aromatic complexes, etc. Among these oxime compounds are preferred. For details of these, the description in paragraphs 0165 to 0182 of JP-A-2016-027357 can be referred to, and the content is incorporated in this specification.

作為醯基膦化合物,可舉出2,4,6-三甲基苯甲醯基-二苯基-氧化膦等。又,能夠使用作為市售品之IRGACURE-819或IRGACURE1173、IRGACURE-TPO(產品名:均為BASF公司製)。 Examples of the acylphosphine compound include 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide and the like. Moreover, commercially available IRGACURE-819, IRGACURE1173, and IRGACURE-TPO (product names: both are made by BASF Corporation) can be used.

使用於上述壓印用下層膜形成組成物之光聚合起始劑的含量進行摻合時,在不揮發性成分中,例如為0.01~15質量%,較佳為0.1~12質量%,進一步較佳為0.2~7質量%。使用2種以上的光聚合起始劑時,其總計量成為上述範圍。 When blending the content of the photopolymerization initiator used in the underlayer film-forming composition for imprinting, it is, for example, 0.01 to 15% by mass, preferably 0.1 to 12% by mass in the non-volatile components, and further preferably Preferably, it is 0.2 to 7% by mass. When using 2 or more types of photoinitiators, the total amount will be the said range.

<<聚合抑制劑>> <<polymerization inhibitor>>

作為不揮發性成分,可包含聚合抑制劑。本實施形態之聚合抑制劑(B) 係具有由硬化性主劑(A)產生之自由基在引起成長反應之前捕獲其自由基之能力之化合物。藉此,聚合抑制劑(B)作用為抑制硬化性主劑(A)的聚合。 A polymerization inhibitor may be contained as a nonvolatile component. Polymerization inhibitor (B) of this embodiment It is a compound that has the ability to trap free radicals generated by the hardening main agent (A) before causing growth reactions. Thereby, the polymerization inhibitor (B) acts to suppress the polymerization of the curable main agent (A).

聚合抑制劑(B)能夠為氫醌類、鄰苯二酚類、啡噻嗪、吩噁嗪中的任一個。作為聚合抑制劑(B)的具體例,能夠舉出4-甲氧基苯酚、4-甲氧基-1-萘酚、4-三級丁基兒茶酚、2,6-二-三級丁基苯酚、2,6-二三級丁基對甲酚、2-三級丁基-4,6-二甲基苯酚、2,4,6-三-三級丁基苯酚、氫醌、三級丁基氫醌等苯酚系化合物。作為聚合抑制劑(B)的具體例,還能夠舉出萘醌、苯醌等醌系化合物。作為聚合抑制劑(B)的具體例,能夠舉出啡噻嗪、吩噁嗪、4-羥基-2,2,6,6-四甲基哌啶等胺系化合物。作為聚合抑制劑(B)的具體例,還能夠舉出2,2,6,6-四甲基哌啶-N-氧基、4-羥基-2,2,6,6-四甲基哌啶-N-氧基等N-氧基系化合物。在此舉出之化合物僅為例示,聚合抑制劑(B)可為其他化合物。 The polymerization inhibitor (B) can be any one of hydroquinones, catechols, phenanthiazine, and phenoxazine. Specific examples of the polymerization inhibitor (B) include 4-methoxyphenol, 4-methoxy-1-naphthol, 4-tertiary butylcatechol, 2,6-di-tertiary Butylphenol, 2,6-di-tertiary butyl-p-cresol, 2-tertiary butyl-4,6-dimethylphenol, 2,4,6-tri-tertiary butylphenol, hydroquinone, Phenolic compounds such as tertiary butylhydroquinone. Specific examples of the polymerization inhibitor (B) include quinone compounds such as naphthoquinone and benzoquinone. Specific examples of the polymerization inhibitor (B) include amine compounds such as phenanthiazine, phenoxazine, and 4-hydroxy-2,2,6,6-tetramethylpiperidine. Specific examples of the polymerization inhibitor (B) include 2,2,6,6-tetramethylpiperidine-N-oxyl, 4-hydroxy-2,2,6,6-tetramethylpiperidine N-oxyl compounds such as pyridine-N-oxyl. The compounds listed here are merely examples, and the polymerization inhibitor (B) may be other compounds.

聚合抑制劑的含量為固體成分的0.0001質量%以上且10.0質量%以下為較佳,0.001質量%以上且1.0質量%以下為更佳,0.005質量%以上且0.1質量%以下為進一步較佳。聚合抑制劑可僅使用1種,亦可使用2種以上。使用2種以上時,該等總計量成為上述範圍為較佳。 The content of the polymerization inhibitor is preferably from 0.0001% by mass to 10.0% by mass of the solid content, more preferably from 0.001% by mass to 1.0% by mass, still more preferably from 0.005% by mass to 0.1% by mass. Only 1 type may be used for a polymerization inhibitor, and 2 or more types may be used. When using 2 or more types, it is preferable that these total amounts are in the said range.

<<其他成分>> <<Other ingredients>>

作為摻合到壓印用下層膜形成組成物之不揮發性成分,除上述化合物之外,可以包含1種或2種以上熱聚合起始劑、抗氧化劑、均染劑、增黏劑、界面活性劑等。 As a non-volatile component blended into the underlayer film-forming composition for imprint, one or more kinds of thermal polymerization initiators, antioxidants, leveling agents, tackifiers, interface Active agents, etc.

關於熱聚合起始劑等,能夠使用日本特開2013-036027號公報、日本特 開2014-090133號公報、日本特開2013-189537號公報中記載之各成分。關於含量等亦能夠參閱上述公報的記載。 Regarding the thermal polymerization initiator etc., JP 2013-036027 A, JP Components described in KOKAI Publication No. 2014-090133 and JP-A No. 2013-189537. Regarding the content and the like, the description in the above publication can also be referred to.

又,本發明中,還能夠設為壓印用下層膜形成組成物實質上不包含界面活性劑之構成。實質上不包含係為壓印用下層膜形成組成物中的不揮發性成分的0.1質量%以下。 In addition, in the present invention, the composition for forming an underlayer film for imprint can also be configured to substantially not contain a surfactant. Substantially not contained is 0.1% by mass or less of the non-volatile components in the underlayer film-forming composition for imprint.

<<下層膜用溶劑>> <<Solvent for lower film>>

壓印用下層膜形成組成物包含溶劑。溶劑例如以70.0質量%以上的比例包含在23℃為液體且沸點為250℃以下的化合物(下層膜用溶劑)為較佳。通常,不揮發性成分最終形成下層膜。壓印用下層膜形成組成物包含80.0質量%以上的下層膜用溶劑為較佳,90.0質量%以上為更佳,93.0質量%以上為更佳,94.0質量%以上為進一步較佳,可為95.0質量%以上,98.0質量%以上,99.0質量%以上。 The imprint underlayer film-forming composition contains a solvent. The solvent preferably contains, for example, a compound that is liquid at 23° C. and has a boiling point of 250° C. or lower (solvent for the lower layer film) in a proportion of 70.0% by mass or more. Typically, the non-volatile components end up forming the underlying film. The composition for forming an underlayer film for imprinting preferably contains at least 80.0% by mass of the solvent for the underlayer film, more preferably at least 90.0% by mass, more preferably at least 93.0% by mass, still more preferably at least 94.0% by mass, and may be 95.0% by mass. Mass % or more, 98.0 mass % or more, 99.0 mass % or more.

溶劑在壓印用下層膜形成組成物中可僅包含1種,亦可包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。 The solvent may be contained in the underlayer film-forming composition for imprint only by 1 type, or may contain 2 or more types. When containing 2 or more types, it is preferable that a total amount becomes the said range.

下層膜用溶劑的沸點為230℃以下為較佳,200℃以下為更佳,180℃以下為進一步較佳,160℃以下為更較佳,130℃以下為更進一步較佳。下限值為23℃,但實際上為60℃以上。藉由將沸點設為上述範圍,能夠容易從下層膜去除溶劑,因此較佳。 The boiling point of the solvent for the lower layer film is preferably 230°C or lower, more preferably 200°C or lower, still more preferably 180°C or lower, still more preferably 160°C or lower, still more preferably 130°C or lower. The lower limit is 23°C, but actually it is 60°C or higher. Since the solvent can be easily removed from the lower layer film by making a boiling point into the said range, it is preferable.

下層膜用溶劑係有機溶劑為較佳。溶劑係包含酯基、羰基、羥基及醚基中的任意一個以上之溶劑為較佳。其中,使用非質子性極性溶劑為較佳。 The solvent-based organic solvent for the lower film is preferred. It is preferable that the solvent contains any one or more of ester group, carbonyl group, hydroxyl group and ether group. Among them, it is preferable to use an aprotic polar solvent.

作為具體例,選擇烷氧基醇、丙二醇單烷基醚羧酸酯、丙二醇單 烷基醚、乳酸酯、乙酸酯、烷氧基丙酸酯、鏈狀酮、環狀酮、內酯及伸烷基碳酸酯。 As specific examples, select alkoxy alcohol, propylene glycol monoalkyl ether carboxylate, propylene glycol mono Alkyl ethers, lactates, acetates, alkoxypropionates, chain ketones, cyclic ketones, lactones and alkylene carbonates.

作為烷氧基醇,可舉出甲氧基乙醇、乙氧基乙醇、甲氧基丙醇(例如1-甲氧基-2-丙醇)、乙氧基丙醇(例如,1-乙氧基-2-丙醇)、丙氧基丙醇(例如,1-丙氧基-2-丙醇)、甲氧基丁醇(例如,1-甲氧基-2-丁醇、1-甲氧基-3-丁醇)、乙氧基丁醇(例如,1-乙氧基-2-丁醇、1-乙氧基-3-丁醇)、甲基戊醇(例如,4-甲基-2-戊醇)等。 Examples of alkoxy alcohols include methoxyethanol, ethoxyethanol, methoxypropanol (for example, 1-methoxy-2-propanol), ethoxypropanol (for example, 1-ethoxy 2-propanol), propoxypropanol (for example, 1-propoxy-2-propanol), methoxybutanol (for example, 1-methoxy-2-butanol, 1-methyl oxy-3-butanol), ethoxybutanol (for example, 1-ethoxy-2-butanol, 1-ethoxy-3-butanol), methylpentanol (for example, 4-methyl base-2-pentanol), etc.

作為丙二醇單烷基醚羧酸酯,為選自包含丙二醇單甲醚乙酸酯、丙二醇單甲醚丙酸酯及丙二醇單乙醚乙酸酯之群組中之至少1個為較佳,丙二醇單甲醚乙酸酯為特佳。 As the propylene glycol monoalkyl ether carboxylate, at least one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate and propylene glycol monoethyl ether acetate is preferred. Methyl ether acetate is particularly preferred.

又,作為丙二醇單烷基醚,丙二醇單甲醚或丙二醇單乙醚為較佳。 Moreover, propylene glycol monomethyl ether or propylene glycol monoethyl ether is preferable as propylene glycol monoalkyl ether.

作為乳酸酯,乳酸乙酯、乳酸丁酯或乳酸丙酯為較佳。 As the lactate, ethyl lactate, butyl lactate or propyl lactate is preferable.

作為乙酸酯,乙酸甲酯、乙酸乙酯、乙酸丁酯、乙酸異丁酯、乙酸丙酯、乙酸異戊酯(Isoamyl acetate)、甲酸甲酯、甲酸乙酯、甲酸丁酯、甲酸丙酯或乙酸3-甲氧基丁酯為較佳。 As acetate, methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, isoamyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate Or 3-methoxybutyl acetate is preferred.

作為烷氧基丙酸酯,3-甲氧基丙酸甲酯(MMP)或3-乙氧基丙酸乙酯(EEP)為較佳。 As the alkoxypropionate, methyl 3-methoxypropionate (MMP) or ethyl 3-ethoxypropionate (EEP) is preferred.

作為鏈狀酮,1-辛酮、2-辛酮、1-壬酮、2-壬酮、丙酮、4-庚酮、1-己酮、2-己酮、二異丁酮、苯基丙酮、甲基乙基酮、甲基異丁基酮、乙醯基丙酮、丙酮基丙酮、紫羅蘭酮(ionone)、二丙酮醇、乙醯甲醇、苯乙酮、甲基萘基酮、甲基戊基酮為較佳。 As chain ketones, 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, phenylacetone , methyl ethyl ketone, methyl isobutyl ketone, acetyl acetone, acetonyl acetone, ionone, diacetone alcohol, acetyl methanol, acetophenone, methyl naphthyl ketone, methyl penta Ketones are preferred.

作為環狀酮,甲基環己酮、異佛爾酮或環己酮為較佳。 As the cyclic ketone, methylcyclohexanone, isophorone or cyclohexanone is preferred.

作為內酯,γ-丁內酯為較佳。 As the lactone, γ-butyrolactone is preferred.

作為伸烷基碳酸酯,碳酸丙烯酯為較佳。 As the alkylene carbonate, propylene carbonate is preferred.

除上述成分之外,使用碳數為7以上(7~14為較佳,7~12為更佳,7~10為進一步較佳)且雜原子數為2以下的酯系溶劑為較佳。 In addition to the above components, it is preferable to use an ester-based solvent having 7 or more carbon atoms (preferably 7 to 14, more preferably 7 to 12, even more preferably 7 to 10) and 2 or less heteroatoms.

作為碳數為7以上且雜原子數為2以下的酯系溶劑的較佳例,可舉出乙酸戊酯、乙酸2-甲基丁酯、乙酸1-甲基丁酯、乙酸己酯、丙酸戊酯、丙酸己酯、丙酸丁酯、異丁酸異丁酯、丙酸庚酯、丁酸丁酯等,使用乙酸異戊酯(Isoamyl acetate)為特佳。 Preferred examples of ester-based solvents having 7 or more carbon atoms and 2 or less heteroatoms include pentyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, propyl acetate, Amyl propionate, hexyl propionate, butyl propionate, isobutyl isobutyrate, heptyl propionate, butyl butyrate, etc., isoamyl acetate is particularly preferred.

又,使用閃點(以下,還稱作fp)為30℃以上之溶劑亦較佳。作為該種成分,丙二醇單甲醚(fp:47℃)、乳酸乙酯(fp:53℃)、3-乙氧基丙酸乙酯(fp:49℃)、甲基戊基酮(fp:42℃)、環己酮(fp:30℃)、乙酸戊酯(fp:45℃)、2-羥基異丁酸甲酯(fp:45℃)、γ-丁內酯(fp:101℃)或碳酸丙烯酯(fp:132℃)為較佳。該等中,丙二醇單乙醚、乳酸乙酯、乙酸戊酯或環己酮為進一步較佳,丙二醇單乙醚或乳酸乙酯為特佳。 In addition, it is also preferable to use a solvent having a flash point (hereinafter also referred to as fp) of 30° C. or higher. As such components, propylene glycol monomethyl ether (fp: 47°C), ethyl lactate (fp: 53°C), ethyl 3-ethoxypropionate (fp: 49°C), methyl amyl ketone (fp: 42°C), cyclohexanone (fp: 30°C), amyl acetate (fp: 45°C), methyl 2-hydroxyisobutyrate (fp: 45°C), γ-butyrolactone (fp: 101°C) Or propylene carbonate (fp: 132°C) is preferred. Among these, propylene glycol monoethyl ether, ethyl lactate, pentyl acetate, or cyclohexanone are more preferable, and propylene glycol monoethyl ether or ethyl lactate are particularly preferable.

作為下層膜用溶劑,且作為其中較佳之溶劑,為選自包含水、1-甲氧基-2-丙醇、丙二醇單甲醚乙酸酯(PGMEA)、丙酸乙氧基乙酯、環己酮、2-庚酮、γ-丁內酯、乙酸丁酯、丙二醇單甲醚(PGME)、乳酸乙酯及4-甲基-2-戊醇之群組中之至少1種,為選自包含1-甲氧基-2-丙醇、PGMEA、乙酸丁酯之群組中之至少1種為進一步較佳。 As a solvent for the lower film, and as a preferred solvent, it is selected from water, 1-methoxy-2-propanol, propylene glycol monomethyl ether acetate (PGMEA), ethoxyethyl propionate, cyclic At least one selected from the group consisting of hexanone, 2-heptanone, γ-butyrolactone, butyl acetate, propylene glycol monomethyl ether (PGME), ethyl lactate and 4-methyl-2-pentanol At least one selected from the group consisting of 1-methoxy-2-propanol, PGMEA, and butyl acetate is further preferred.

作為壓印用下層膜形成組成物的收容容器能夠使用以往習知的收容容器。又,作為收容容器,以抑制雜質混入原料或組成物中之目的,使用由6種6層樹脂構成容器內壁之多層瓶或將6種樹脂設為7層結構之瓶 亦較佳。作為該種容器,例如可舉出日本特開2015-123351號公報中記載之容器。 A conventionally known container can be used as the container for the imprint underlayer film-forming composition. Also, as a storage container, for the purpose of suppressing the mixing of impurities into the raw material or composition, a multi-layer bottle whose inner wall is composed of 6 kinds of 6-layer resins or a bottle with 6 kinds of resins as a 7-layer structure is used Also better. As such a container, the container described in Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.

<壓印用硬化性組成物> <Curable composition for imprint>

<<聚合性化合物>> <<polymeric compound>>

壓印用硬化性組成物包含聚合性化合物為較佳,包含具有芳香環之聚合性化合物為較佳。聚合性化合物可為單官能聚合性化合物,亦可為多官能聚合性化合物。又,包含單官能聚合性化合物和多官能聚合性化合物這雙方為較佳。 The curable imprint composition preferably contains a polymerizable compound, and preferably contains a polymerizable compound having an aromatic ring. The polymerizable compound may be a monofunctional polymerizable compound or a polyfunctional polymerizable compound. Moreover, it is preferable to contain both a monofunctional polymeric compound and a polyfunctional polymeric compound.

<<<單官能聚合性化合物>>> <<<Monofunctional polymeric compound>>>

使用於壓印用硬化性組成物之單官能聚合性化合物的分子量為50以上為較佳,100以上為更佳,150以上為進一步較佳。又,分子量為1,000以下為較佳,800以下為更佳,300以下為進一步較佳,270以下為更較佳。藉由將分子量設為上述下限值以上,有能夠抑制揮發性之傾向。藉由將分子量設為上述上限值以下,有能夠降低黏度之傾向。 The molecular weight of the monofunctional polymerizable compound used in the curable composition for imprints is preferably at least 50, more preferably at least 100, and still more preferably at least 150. Moreover, the molecular weight is preferably 1,000 or less, more preferably 800 or less, still more preferably 300 or less, and still more preferably 270 or less. Volatility tends to be suppressed by making molecular weight more than the said lower limit. There exists a tendency for a viscosity to be able to be reduced by making molecular weight below the said upper limit.

使用於壓印用硬化性組成物之單官能聚合性化合物的沸點為85℃以上為較佳,110℃以上為更佳,130℃以上為進一步較佳。藉由將沸點設為上述下限值以上,能夠抑制揮發性。關於沸點的上限值,並無特別限定,例如,能夠將沸點設為350℃以下。 The boiling point of the monofunctional polymerizable compound used in the curable composition for imprint is preferably 85°C or higher, more preferably 110°C or higher, still more preferably 130°C or higher. Volatility can be suppressed by making a boiling point more than the said lower limit. Although it does not specifically limit about the upper limit of a boiling point, For example, a boiling point can be made into 350 degreeC or less.

使用於壓印用硬化性組成物之單官能聚合性化合物所具有之聚合性基團的種類並無特別限定,但例示有乙烯性不飽和基、環氧基等,乙烯性不飽和基為較佳。作為乙烯性不飽和基,(甲基)丙烯醯基為較佳,丙烯醯基為更佳。 The type of polymerizable group contained in the monofunctional polymerizable compound used in the imprint curable composition is not particularly limited, but examples include ethylenically unsaturated groups, epoxy groups, etc., and ethylenically unsaturated groups are more preferred. good. As the ethylenically unsaturated group, a (meth)acryl group is preferable, and an acryl group is more preferable.

構成使用於壓印用硬化性組成物之單官能聚合性化合物之原子的種類並無特別限定,但是,僅由選自碳原子、氧原子、氫原子及鹵素原子之原子構成為較佳,僅由選自碳原子、氧原子及氫原子之原子構成為更佳。 The type of atoms constituting the monofunctional polymerizable compound used in the imprint curable composition is not particularly limited, but it is preferably composed of only atoms selected from carbon atoms, oxygen atoms, hydrogen atoms, and halogen atoms. It is more preferably composed of atoms selected from carbon atoms, oxygen atoms and hydrogen atoms.

使用於壓印用硬化性組成物之單官能聚合性化合物的較佳的第1實施形態為具有碳數4以上的直鏈或分支的烴鏈之化合物。 A preferred first embodiment of the monofunctional polymerizable compound used in the curable composition for imprint is a compound having a straight or branched hydrocarbon chain having 4 or more carbon atoms.

本發明中的烴鏈表示烷鏈、烯鏈、炔鏈,烷鏈、烯鏈為較佳,烷鏈為更佳。 The hydrocarbon chain in the present invention means an alkane chain, an alkene chain, and an alkyne chain, and an alkane chain and an alkene chain are preferable, and an alkane chain is more preferable.

在本發明中,烷鏈表示烷基及伸烷基。同樣地,烯鏈表示烯基及伸烯基,炔鏈表示炔基及伸炔基。該等中,直鏈或分支的烷基、烯基為更佳,直鏈或分支的烷基為進一步較佳,直鏈的烷基為更較佳。 In the present invention, the alkyl chain means an alkyl group and an alkylene group. Likewise, an alkene chain represents an alkenyl group and an alkenylene group, and an alkyn chain represents an alkynyl group and an alkynylene group. Among these, straight-chain or branched alkyl and alkenyl groups are more preferable, straight-chain or branched alkyl groups are further preferable, and straight-chain alkyl groups are even more preferable.

上述直鏈或分支的烴鏈(烷基為較佳)為碳數4以上,碳數6以上為較佳,碳數8以上為更佳,碳數10以上為進一步較佳,碳數12以上為更較佳。關於碳數的上限值,並無特別限定,但是,例如,能夠設為碳數25以下。 The above-mentioned linear or branched hydrocarbon chain (preferably an alkyl group) has a carbon number of 4 or more, preferably a carbon number of 6 or more, more preferably a carbon number of 8 or more, further preferably a carbon number of 10 or more, and a carbon number of 12 or more for better. The upper limit of the carbon number is not particularly limited, but, for example, it can be 25 or less.

從提高脫模性的觀點而言,上述直鏈或分支的烴鏈可包含醚基(-O-),但不包含醚基為較佳。 The aforementioned straight or branched hydrocarbon chain may contain an ether group (—O—) from the viewpoint of improving mold release properties, but preferably does not contain an ether group.

藉由使用具有該種烴鏈之單官能聚合性化合物,以比較少的添加量,降低硬化物(圖案)的彈性係數,並提高脫模性。又,若使用具有直鏈或分支的烷基之單官能聚合性化合物,則能夠降低鑄模與硬化物(圖案)的界面能量,並進一步提高脫模性。 By using a monofunctional polymerizable compound having such a hydrocarbon chain, the modulus of elasticity of the hardened product (pattern) is lowered and the release property is improved with a relatively small amount of addition. In addition, if a monofunctional polymerizable compound having a linear or branched alkyl group is used, the interface energy between the mold and the cured product (pattern) can be reduced, and the mold releasability can be further improved.

作為具有使用於壓印用硬化性組成物之單官能聚合性化合物為較佳之烴基,能夠舉出(1)~(3)。 Examples of preferred hydrocarbon groups having a monofunctional polymerizable compound used in curable compositions for imprints include (1) to (3).

(1)碳數8以上的直鏈烷基 (1) Straight-chain alkyl group with 8 or more carbon atoms

(2)碳數10以上的分支烷基 (2) Branched alkyl groups with more than 10 carbon atoms

(3)由碳數1以上的直鏈或分支的烷基取代的脂環、芳香族環或芳香族雜環 (3) Alicyclic rings, aromatic rings or aromatic heterocyclic rings substituted by linear or branched alkyl groups having 1 or more carbon atoms

(1)碳數8以上的直鏈烷基 (1) Straight-chain alkyl group with 8 or more carbon atoms

碳數8以上的直鏈烷基係碳數10以上者為更佳,碳數11以上為進一步較佳,碳數12以上為更較佳。又,碳數20以下為較佳,碳數18以下為更佳,碳數16以下為進一步較佳,碳數14以下為更較佳。 The linear alkyl group having 8 or more carbon atoms is more preferably one having 10 or more carbon atoms, further preferably 11 or more carbon atoms, and still more preferably 12 or more carbon atoms. Also, the carbon number is preferably 20 or less, more preferably 18 or less, still more preferably 16 or less, and still more preferably 14 or less.

(2)碳數10以上的分支烷基 (2) Branched alkyl groups with more than 10 carbon atoms

上述碳數10以上的分支烷基係碳數10~20者為較佳,碳數10~16為更佳,碳數10~14為進一步較佳,碳數10~12更較佳。 The above-mentioned branched alkyl group having 10 or more carbon atoms is preferably one having 10-20 carbon atoms, more preferably 10-16 carbon atoms, further preferably 10-14 carbon atoms, and more preferably 10-12 carbon atoms.

(3)由碳數1以上的直鏈或分支的烷基取代之脂環、芳香族環或芳香族雜環 (3) Alicyclic, aromatic or aromatic heterocyclic rings substituted by linear or branched alkyl groups with 1 or more carbon atoms

碳數1以上的直鏈或分支的烷基係直鏈的烷基為更佳。烷基的碳數為14以下為較佳,12以下為更佳,10以下為進一步較佳。 A linear or branched alkyl group having 1 or more carbon atoms is more preferably a linear alkyl group. The carbon number of the alkyl group is preferably 14 or less, more preferably 12 or less, and still more preferably 10 or less.

脂環、芳香族環或芳香族雜環的環可為單環亦可為縮環,但單環為較佳。為縮環時,環的個數為2個或3個為較佳。環為3~8員環為較佳,5員環或6員環為更佳,6員環為進一步較佳。作為環的具體例,可舉出後述環Cz的例。 The alicyclic ring, aromatic ring or aromatic heterocyclic ring may be a single ring or a condensed ring, but a single ring is preferred. In the case of condensed rings, the number of rings is preferably 2 or 3. The ring is preferably 3-8 membered, more preferably 5-membered or 6-membered, and still more preferably 6-membered. Specific examples of the ring include the example of the ring Cz described later.

使用於壓印用硬化性組成物之單官能聚合性化合物係碳數4以上的直鏈或分支的烴鏈和聚合性基團直接或經由連結基鍵結之化合物為較佳,係上述(1)~(3)的基團中的任一個與聚合性基團直接鍵結之化合物為更 佳。作為連結基,例示有-O-、-C(=O)-、-CH2-或該等的組合。作為在本發明中使用之單官能聚合性化合物,直接鍵結(1)碳數8以上的直鏈烷基與(甲基)丙烯醯氧基之直鏈烷基(甲基)丙烯酸酯為特佳。 It is preferred that the monofunctional polymerizable compound used in the curable composition for imprinting be a linear or branched hydrocarbon chain having 4 or more carbon atoms and a polymerizable group bonded directly or via a linking group, which is the above (1 )~(3) The compound in which any one of the groups in (3) is directly bonded to the polymerizable group is more preferable. As the linking group, -O-, -C(=O)-, -CH 2 -, or combinations thereof are exemplified. As the monofunctional polymerizable compound used in the present invention, straight-chain alkyl (meth)acrylates directly bonded (1) with a straight-chain alkyl group having 8 or more carbon atoms and a (meth)acryloxyl group are particularly preferred. good.

單官能聚合性化合物係由下述式(I-1)表示之化合物為較佳。 The monofunctional polymerizable compound is preferably a compound represented by the following formula (I-1).

Figure 108107340-A0305-02-0038-12
Figure 108107340-A0305-02-0038-12

R12表示選自烷基(碳數1~36為較佳,1~30為更佳,1~24為進一步較佳)、脂環(碳數3~24為較佳,3~12為更佳,3~6為進一步較佳)、芳香族環(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)及芳香族雜環(碳數2~12為較佳,2~6為更佳,2~5為進一步較佳)之至少1種或基於該等的組合之基團。R11表示氫原子或甲基。L11表示單鍵或上述連結基L,伸烷基或伸烯基為較佳。R12與L11可經由或不經由連結基L鍵結而形成環。R12、L11可具有上述取代基T。取代基T可鍵結複數個而形成環,亦可與R12鍵結或與L11鍵結而形成環。取代基T為複數個時,可以彼此相同,亦可彼此不同。R12中的脂環、芳香族環或芳香族雜環的較佳範圍與後述環Cz相同。 R 12 represents an alkyl group (preferably 1 to 36 carbons, more preferably 1 to 30, further preferably 1 to 24), alicyclic (preferably 3 to 24 carbons, more preferably 3 to 12 better, 3~6 is more preferable), aromatic ring (6~22 carbon number is better, 6~18 is more preferable, 6~10 is more preferable) and aromatic heterocycle (carbon number 2~12 Preferably, 2 to 6 are more preferred, and 2 to 5 are further preferred) at least one type or a group based on a combination thereof. R 11 represents a hydrogen atom or a methyl group. L 11 represents a single bond or the above-mentioned linking group L, preferably alkylene or alkenylene. R 12 and L 11 may be bonded through a linking group L or not to form a ring. R 12 and L 11 may have the substituent T described above. A plurality of substituents T may be bonded to form a ring, or may be bonded to R 12 or to L 11 to form a ring. When there are plural substituents T, they may be the same as or different from each other. The preferable range of the alicyclic ring, aromatic ring or aromatic heterocyclic ring in R12 is the same as that of ring Cz described later.

作為第1實施形態的單官能聚合性化合物,能夠例示下述第1群組及第2群組。然而,本發明並不限定於該等自不必敘述。又,第1群組比第2群組更佳。 As the monofunctional polymerizable compound of the first embodiment, the following first group and second group can be illustrated. However, the present invention is not limited to these descriptions. Also, the first group is better than the second group.

第1群組 Group 1

[化學式13]

Figure 108107340-A0305-02-0039-13
[chemical formula 13]
Figure 108107340-A0305-02-0039-13

第2群組 Group 2

Figure 108107340-A0305-02-0039-14
Figure 108107340-A0305-02-0039-14

使用於壓印用硬化性組成物之單官能聚合性化合物的較佳的第2實施形態係具有環狀結構之化合物。作為環狀結構,3~8員環的單環或縮合環為較佳。構成上述縮合環之環的個數為2個或3個為較佳。環狀結構為5員環或6員環為更佳,6員環為進一步較佳。又,單環為更佳。 A preferred second embodiment of the monofunctional polymerizable compound used in the curable composition for imprint is a compound having a ring structure. As a cyclic structure, a monocyclic or condensed ring having 3 to 8 members is preferable. The number of rings constituting the above-mentioned condensed ring is preferably 2 or 3. The ring structure is more preferably a 5-membered ring or a 6-membered ring, and a 6-membered ring is still more preferable. Also, a single ring is more preferable.

聚合性化合物的一分子中的環狀結構的個數可為1個,亦可為2個以上,1個或2個為較佳,1個為更佳。再者,為縮合環時,將縮合環視為1個環狀結構。 The number of cyclic structures in one molecule of the polymerizable compound may be one, or two or more, preferably one or two, and more preferably one. In addition, in the case of a condensed ring, the condensed ring is regarded as one cyclic structure.

作為第2實施形態的單官能聚合性化合物,能夠例示下述化合物。然而,本發明並不限定於該等自不必敘述。又,上述第1實施形態中敘述之化合物中,例示有具有環狀結構之化合物亦作為本實施形態的較佳化合物。 As the monofunctional polymerizable compound of the second embodiment, the following compounds can be illustrated. However, the present invention is not limited to these descriptions. Moreover, among the compounds described in the above-mentioned first embodiment, compounds having a ring structure are exemplified as preferred compounds of the present embodiment.

Figure 108107340-A0305-02-0040-15
Figure 108107340-A0305-02-0040-15

本發明中,在不脫離本發明的主旨之範圍,可使用除上述單官能聚合性化合物之外的單官能聚合性化合物,例示日本特開2014-170949號公報記載之聚合性化合物中的單官能聚合性化合物,該等內容包含在本說明書中。 In the present invention, a monofunctional polymerizable compound other than the monofunctional polymerizable compound described above can be used without departing from the gist of the present invention. Examples of the monofunctional polymerizable compounds described in JP-A-2014-170949 Polymer compounds, these contents are included in this specification.

關於使用於壓印用硬化性組成物之單官能聚合性化合物相對於總聚合性化合物之含量,當含有時,6質量%以上為較佳,8質量%以上為更佳,10質量%以上為進一步較佳,12質量%以上更較佳。又,上述含量為60質量%以下為更佳,可為55質量%以下。 Regarding the content of the monofunctional polymerizable compound used in the curable composition for imprints relative to the total polymerizable compound, when contained, it is preferably 6% by mass or more, more preferably 8% by mass or more, and 10% by mass or more. More preferably, 12% by mass or more is more preferable. Moreover, the said content is more preferably 60 mass % or less, and may be 55 mass % or less.

本發明中可僅包含1種單官能聚合性化合物,亦可包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。 In the present invention, only one type of monofunctional polymerizable compound may be included, or two or more types may be included. When containing 2 or more types, it is preferable that a total amount becomes the said range.

<<<多官能聚合性化合物>>> <<<Multifunctional polymeric compound>>>

使用於壓印用硬化性組成物之多官能聚合性化合物並無特別限定,但包含脂環、芳香族環及芳香族雜環中的至少1種為較佳,包含芳香族環及芳香族雜環中的至少1種為更佳。在以下說明中,有時將包含脂環、芳香族環及芳香族雜環中的至少1種之化合物稱作含環多官能聚合性化合物。 The polyfunctional polymerizable compound used in the curable composition for imprint is not particularly limited, but preferably contains at least one of an alicyclic ring, an aromatic ring, and an aromatic heterocyclic ring, and includes an aromatic ring and an aromatic heterocyclic ring. At least one of the rings is more preferred. In the following description, a compound containing at least one of an alicyclic ring, an aromatic ring, and an aromatic heterocyclic ring may be referred to as a ring-containing polyfunctional polymerizable compound.

使用於壓印用硬化性組成物之含環多官能聚合性化合物的分子量為1,000以下為較佳,800以下為更佳,500以下為進一步較佳,350以下為更較佳。藉由將分子量的上限值設為1,000以下,有能夠降低黏度之傾向。關於分子量的下限值,並無特別限定,但是,例如,能夠設為200以上。 The molecular weight of the ring-containing polyfunctional polymerizable compound used in the curable composition for imprint is preferably 1,000 or less, more preferably 800 or less, still more preferably 500 or less, and more preferably 350 or less. By setting the upper limit of the molecular weight to 1,000 or less, the viscosity tends to be lowered. Although it does not specifically limit about the lower limit of molecular weight, For example, it can set it as 200 or more.

使用於壓印用硬化性組成物之含環多官能聚合性化合物所具有之聚合性基團的個數為2以上,2~7為較佳,2~4為更佳,2或3為進一步較佳,2為更較佳。 The number of polymerizable groups in the ring-containing polyfunctional polymerizable compound used in the curable composition for imprinting is 2 or more, preferably 2 to 7, more preferably 2 to 4, and further preferably 2 or 3. Better, 2 is more preferable.

使用於壓印用硬化性組成物之含環多官能聚合性化合物所具有之聚合性基團的種類並無特別限定,但是,例示有乙烯性不飽和基、環氧基等,乙烯性不飽和基為較佳。作為乙烯性不飽和基,(甲基)丙烯醯基為更佳,丙烯醯基為進一步較佳。1個分子中可包含2種以上的聚合性基團,亦可包含2個以上相同種類的聚合性基團。 The type of polymerizable group contained in the ring-containing polyfunctional polymerizable compound used in the imprint curable composition is not particularly limited, but examples include ethylenically unsaturated groups, epoxy groups, etc., ethylenically unsaturated base is better. As the ethylenically unsaturated group, a (meth)acryl group is more preferable, and an acryl group is still more preferable. One molecule may contain two or more polymerizable groups, or may contain two or more polymerizable groups of the same type.

構成使用於壓印用硬化性組成物之含環多官能聚合性化合物之原子的種類並無特別限定,但是,僅由選自碳原子、氧原子、氫原子及鹵素原子之原子構成為較佳,僅由選自碳原子、氧原子及氫原子之原子構成為更佳。 The type of atoms constituting the ring-containing polyfunctional polymerizable compound used in the imprint curable composition is not particularly limited, but it is preferably composed of only atoms selected from carbon atoms, oxygen atoms, hydrogen atoms, and halogen atoms. , is more preferably constituted only of atoms selected from carbon atoms, oxygen atoms and hydrogen atoms.

使用於壓印用硬化性組成物之含環多官能聚合性化合物中所含之環可為單環,亦可為縮環,但單環為較佳。為縮環時,環的個數為2個或3個為較佳。環為3~8員環為較佳,5員環或6員環為更佳,6員環為進一步較佳。又,環可為脂環,亦可為芳香族環或芳香族雜環,但芳香族環或芳香族雜環為較佳,芳香族環為進一步較佳。作為環的具體例,可舉出環Cz 的例。 The ring contained in the ring-containing polyfunctional polymerizable compound used in the imprint curable composition may be monocyclic or condensed, but monocyclic is preferred. In the case of condensed rings, the number of rings is preferably 2 or 3. The ring is preferably 3-8 membered, more preferably 5-membered or 6-membered, and still more preferably 6-membered. In addition, the ring may be an alicyclic ring, or may be an aromatic ring or an aromatic heterocyclic ring, but an aromatic ring or an aromatic heterocyclic ring is preferred, and an aromatic ring is still more preferred. Specific examples of the ring include the ring Cz example.

使用於壓印用硬化性組成物之含環多官能聚合性化合物中的環的個數可為1個,亦可為2個以上,但1個或2個為較佳,1個為更佳。再者,為縮合環時,將縮合環視為1個。 The number of rings used in the ring-containing polyfunctional polymerizable compound used in the curable composition for imprints may be 1 or 2 or more rings, but 1 or 2 rings are preferred, and 1 ring is more preferred . In addition, when it is a condensed ring, the condensed ring is regarded as one.

使用於壓印用硬化性組成物之含環多官能聚合性化合物的結構由(聚合性基團)-(單鍵或2價的連結基)-(具有環之2價的基團)-(單鍵或2價的連結基)-(聚合性基團)表示為較佳。其中,作為連結基,伸烷基為更佳,碳數1~3的伸烷基為進一步較佳。 The structure of the ring-containing polyfunctional polymerizable compound used in the curable composition for imprinting consists of (polymerizable group)-(single bond or divalent linking group)-(divalent group having a ring)-( A single bond or a divalent linking group)-(polymerizable group) is preferred. Among them, an alkylene group is more preferable as a linking group, and an alkylene group having 1 to 3 carbon atoms is still more preferable.

使用於壓印用硬化性組成物之含環多官能聚合性化合物由下述式(I-2)表示為較佳。 The ring-containing polyfunctional polymerizable compound used in the imprint curable composition is preferably represented by the following formula (I-2).

Figure 108107340-A0305-02-0042-16
Figure 108107340-A0305-02-0042-16

Q表示具有選自脂環(碳數3~24為較佳,3~12為更佳,3~6為進一步較佳)、芳香族環(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)及芳香族雜環(碳數2~12為較佳,2~6為更佳,2~5為進一步較佳)之至少1種之1+q價的基團。R21及R22分別獨立地表示氫原子或甲基。L21及L22分別獨立地表示單鍵或上述連結基L。Q與L21或L22可以經由或不經由連結基L鍵結而形成環。Q、L21及L22可具有上述取代基T。取代基T可鍵結複數個而形成環,亦可與Q鍵結或者與L21或L22鍵結而形成環。取代基T為複數個時,可以彼此相同,亦可彼此不同。Q中的脂環、芳香族環或芳香族雜環的較佳範圍可舉出後述環Cz。q為1~5的整數,1~3的 整數為較佳,1或2為更佳,1為進一步較佳。 Q represents a group selected from alicyclic rings (preferably 3~24 carbons, more preferably 3~12, further preferably 3~6), aromatic rings (preferably 6~22 carbons, 6~18 are 1+q valence of at least one of more preferably, 6~10 is more preferable) and aromatic heterocyclic ring (2~12 is more preferable, 2~6 is more preferable, 2~5 is more preferable) group. R 21 and R 22 each independently represent a hydrogen atom or a methyl group. L 21 and L 22 each independently represent a single bond or the aforementioned linking group L. Q and L21 or L22 may or may not be bonded via a linker L to form a ring. Q, L 21 and L 22 may have the substituent T described above. A plurality of substituents T may be bonded to form a ring, or may be bonded to Q or to L21 or L22 to form a ring. When there are plural substituents T, they may be the same as or different from each other. Preferable ranges of the alicyclic ring, aromatic ring or aromatic heterocyclic ring in Q include ring Cz described later. q is an integer of 1 to 5, preferably an integer of 1 to 3, more preferably 1 or 2, and still more preferably 1.

Q可具有複數個脂環、複數個芳香族環、複數個芳香族雜環、脂環與芳香族環、脂環與芳香族雜環、芳香族環與芳香族雜環鍵結之結構。作為芳香族環所連結之結構可舉出上述式Ar1~Ar5的結構。 Q may have a structure in which plural alicyclic rings, plural aromatic rings, plural aromatic heterocyclic rings, alicyclic rings and aromatic rings, alicyclic rings and aromatic heterocyclic rings, or aromatic rings and aromatic heterocyclic rings are bonded. Examples of the structure to which the aromatic rings are linked include structures of the above-mentioned formulas Ar1 to Ar5.

作為使用於壓印用硬化性組成物之多官能聚合性化合物,能夠例示下述第1群組及第2群組。然而,本發明並不限定於該等自不必敘述。第1群組為更佳。 As the polyfunctional polymerizable compound used in the curable composition for imprints, the following first group and second group can be exemplified. However, the present invention is not limited to these descriptions. Group 1 is better.

第1群組 Group 1

Figure 108107340-A0305-02-0043-17
Figure 108107340-A0305-02-0043-17

第2群組 Group 2

[化學式18]

Figure 108107340-A0305-02-0044-18
[chemical formula 18]
Figure 108107340-A0305-02-0044-18

壓印用硬化性組成物可包含除上述含環多官能聚合性化合物之外的其他多官能聚合性化合物。作為其他多官能聚合性化合物,由下述式(I-3)表示之化合物為較佳。 The curable composition for imprint may contain other polyfunctional polymerizable compounds other than the above-mentioned ring-containing polyfunctional polymerizable compounds. As another polyfunctional polymerizable compound, a compound represented by the following formula (I-3) is preferable.

Figure 108107340-A0305-02-0044-19
Figure 108107340-A0305-02-0044-19

L30表示具有選自直鏈或分支的烷烴結構的基團(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、直鏈或分支的烯烴結構的基團(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、直鏈或分支的炔烴結構的基團(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)之至少1種之1+r價的基團。R25及R26分別獨立地表示氫原子或甲基。L25及L26分別獨立地表示單鍵或上述連結基L。L30與L25或L26可經由或不經由連結基L鍵結而形成環。L25、L26及L30可具有上述取代基T。取代基T可鍵結複數個而形成環,亦可與其他連結基鍵結而形成環。取代基T為複數個時,可以彼此相同,亦可彼此不同。r為1~4的整數,1~3的整數為較佳,1或 2為更佳,1為進一步較佳。再者,L30可介有雜連結基(O、S、NRN)。介有雜連結基之個數按L30的碳數1~6個時為1個之比例為較佳。 L30 represents a group selected from a straight chain or branched alkane structure (1 to 12 carbons is preferred, 1 to 6 is more preferred, and 1 to 3 is further preferred), a straight chain or branched alkene structure Group (2~12 carbon number is preferred, 2~6 is more preferred, 2~3 is further preferred), linear or branched alkyne structure group (carbon number 2~12 is preferred, 2 ~6 is more preferred, and 2~3 is further preferred) at least one 1+r-valent group. R 25 and R 26 each independently represent a hydrogen atom or a methyl group. L 25 and L 26 each independently represent a single bond or the linking group L described above. L 30 and L 25 or L 26 may be bonded via a linker L or not to form a ring. L 25 , L 26 and L 30 may have the substituent T described above. A plurality of substituents T may be bonded to form a ring, or may be bonded to other linking groups to form a ring. When there are plural substituents T, they may be the same as or different from each other. r is an integer of 1 to 4, preferably an integer of 1 to 3, more preferably 1 or 2, and still more preferably 1. Furthermore, L 30 may have a hetero linking group (O, S, NRN ). The number of intervening hetero linking groups is preferably 1 when L 30 has 1 to 6 carbons.

作為使用於壓印用硬化性組成物之其他多官能聚合性化合物,例示有日本特開2014-170949號公報中記載之聚合性化合物中不具有環的多官能聚合性化合物,該等內容包含於本說明書。更具體而言,例如,例示有下述化合物。 Examples of other polyfunctional polymerizable compounds used in the curable composition for imprints include polyfunctional polymerizable compounds that do not have a ring among the polymerizable compounds described in JP-A-2014-170949, which are included in this manual. More specifically, for example, the following compounds are exemplified.

Figure 108107340-A0305-02-0045-20
Figure 108107340-A0305-02-0045-20

作為環Cz,例示有以下芳香族環、芳香族雜環及脂環。 As the ring Cz, the following aromatic rings, aromatic heterocyclic rings and alicyclic rings are exemplified.

作為包含芳香族環之化合物中所含之芳香族環,碳數6~22者為較佳,6~18為更佳,6~10為進一步較佳。作為芳香族環的具體例,可舉出苯環、萘環、蒽環、菲環、萉環、茀環、苊烯環、聯苯環、茚環、二氫茚環、聯三 伸苯環、嵌二萘環、

Figure 108107340-A0305-02-0046-45
(chrysene)環、苝環、四氫萘環等。其中,苯環或萘環為較佳,苯環為更佳。芳香族環可取連結有複數個之結構,例如,可舉出聯苯環、聯二苯環。 As an aromatic ring contained in the compound containing an aromatic ring, those with 6-22 carbon atoms are preferable, 6-18 are more preferable, and 6-10 are still more preferable. Specific examples of the aromatic ring include a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a phenanthrene ring, a fenene ring, an acenaphthylene ring, a biphenyl ring, an indene ring, a dihydroindene ring, and a biphenylene ring. , pyrene ring,
Figure 108107340-A0305-02-0046-45
(chrysene) ring, perylene ring, tetrahydronaphthalene ring, etc. Among them, a benzene ring or a naphthalene ring is preferred, and a benzene ring is more preferred. The aromatic ring may have a structure in which a plurality of them are connected, for example, a biphenyl ring and a biphenyl ring are mentioned.

作為芳香族雜環,碳數1~12者為較佳,1~6為更佳,1~5為進一步較佳。作為其具體例,可舉出噻吩環、呋喃環、吡咯環、咪唑環、吡唑環、三唑環、四唑環、噻唑環、噁唑環、吡啶環、嘧啶環、噠嗪環、異吲哚環、吲唑環、嘌呤環、喹嗪環、異喹啉環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹唑啉環、噌啉(cinnoline)環、咔唑環、吖啶環、啡嗪(phenazine)環、啡噻嗪(phenothiazine)環、啡

Figure 108107340-A0305-02-0046-46
環等。 As the aromatic heterocyclic ring, one having 1 to 12 carbon atoms is preferable, 1 to 6 carbon atoms are more preferable, and 1 to 5 carbon atoms are still more preferable. Specific examples thereof include thiophene ring, furan ring, pyrrole ring, imidazole ring, pyrazole ring, triazole ring, tetrazole ring, thiazole ring, oxazole ring, pyridine ring, pyrimidine ring, pyridazine ring, iso Indole ring, indazole ring, purine ring, quinozine ring, isoquinoline ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinazoline ring, cinnoline (cinnoline) ring, carba Azole ring, acridine ring, phenazine ring, phenothiazine ring, phenanthrene
Figure 108107340-A0305-02-0046-46
Ring etc.

作為脂環,碳數3~22者為較佳,4~18為更佳,6~10為進一步較佳。作為其具體例,可舉出環丙烷環、環丁烷環、環丁烯環、環戊烷環、環己烷環、環己烯環、環庚烷環、環辛烷環、二環戊二烯環、四氫二環戊二烯環、八氫萘環、十氫萘環、六氫茚滿環、莰烷環、降冰片烷環、降冰片烯環、異降冰片烷環、三環癸烷環、四環十二烷環、金剛烷環等。 The alicyclic ring preferably has 3 to 22 carbon atoms, more preferably 4 to 18 carbon atoms, and still more preferably 6 to 10 carbon atoms. Specific examples thereof include a cyclopropane ring, a cyclobutane ring, a cyclobutene ring, a cyclopentane ring, a cyclohexane ring, a cyclohexene ring, a cycloheptane ring, a cyclooctane ring, and a dicyclopentane ring. Diene ring, tetrahydrodicyclopentadiene ring, octahydronaphthalene ring, decahydronaphthalene ring, hexahydroindan ring, camphane ring, norbornane ring, norbornene ring, isonorbornane ring, three Cyclodecane ring, tetracyclododecane ring, adamantane ring, etc.

多官能聚合性化合物相對於壓印用硬化性組成物中的總聚合性化合物含有30質量%以上為較佳,45質量%以上為更佳,50質量%以上為進一步較佳,55質量%以上為更較佳,可為60質量%以上,可進一步為70質量%以上。又,上限值小於95質量%為較佳,90質量%以下為進一步較佳,還能夠設為85質量%以下。 The polyfunctional polymeric compound is preferably contained in an amount of at least 30% by mass, more preferably at least 45% by mass, more preferably at least 50% by mass, and at least 55% by mass, based on the total polymerizable compound in the curable composition for imprint. More preferably, it may be at least 60% by mass, and may be further at least 70% by mass. Also, the upper limit is preferably less than 95% by mass, more preferably 90% by mass or less, and can be set to 85% by mass or less.

壓印用硬化性組成物可僅包含1種多官能聚合性化合物,亦可包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。 The curable imprint composition may contain only one type of polyfunctional polymerizable compound, or may contain two or more types. When containing 2 or more types, it is preferable that a total amount becomes the said range.

在本發明中使用之壓印用硬化性組成物係組成物的85質量%以 上係聚合性化合物為較佳,90質量%以上係聚合性化合物為更佳,93質量%以上係聚合性化合物為進一步較佳。 The curable composition for imprint used in the present invention is 85% by mass or less of the composition The above polymeric compound is preferable, more than 90% by mass of the polymerizable compound is more preferable, and 93% by mass or more of the polymerizable compound is still more preferable.

壓印用硬化性組成物的漢森溶解度參數(HSP)向量的:(i)分散項成分(d成分)為14.0~20.0為較佳,15.0~19.0為更佳,16.0~18.5為進一步較佳;(ii)極性項成分(p成分)為3.5~8.0為較佳,3.8~6.0為更佳,4.0~5.0為進一步較佳;(iii)氫鍵項成分(h成分)為4.0~8.0為較佳,4.7~7.0為更佳,5.2~6.5為進一步較佳。 The Hansen solubility parameter (HSP) vector of the curable composition for imprinting: (i) The dispersion component (d component) is preferably 14.0 to 20.0, more preferably 15.0 to 19.0, and more preferably 16.0 to 18.5 ; (ii) the polar component (p component) is 3.5 ~ 8.0 is better, 3.8 ~ 6.0 is better, 4.0 ~ 5.0 is further better; (iii) the hydrogen bond component (h component) is 4.0 ~ 8.0 is More preferable, 4.7-7.0 is more preferable, 5.2-6.5 is still more preferable.

上述壓印用硬化性組成物的HSP向量的分散項成分、極性項成分、氫鍵項成分分別由後述之實施例中記載之方法設定。 The dispersion-term component, polar-term component, and hydrogen-bond-term component of the HSP vector of the curable composition for imprints are respectively set by methods described in Examples described later.

<<其他成分>> <<Other ingredients>>

壓印用硬化性組成物可含有聚合性化合物之外的添加劑。作為其他添加劑,可以包含聚合起始劑、界面活性劑、敏化劑、脫模劑、抗氧化劑、聚合抑制劑等。 The curable imprint composition may contain additives other than the polymerizable compound. As other additives, polymerization initiators, surfactants, sensitizers, release agents, antioxidants, polymerization inhibitors, and the like may be contained.

作為能夠在本發明中使用之壓印用硬化性組成物的具體例,例示在日本特開2013-036027號公報、日本特開2014-090133號公報、日本特開2013-189537號公報中記載之組成物,並將該等內容編入本說明書。又,關於壓印用硬化性組成物的製備、膜(圖案形成層)的形成方法,亦能夠參閱上述公報的記載,並將該等內容編入本說明書。 Specific examples of curable imprint compositions that can be used in the present invention include those described in JP-A-2013-036027, JP-A-2014-090133, and JP-A-2013-189537. Composition, and these contents are compiled into this manual. Also, regarding the preparation of the curable composition for imprint and the method of forming the film (pattern forming layer), reference can also be made to the descriptions in the above-mentioned gazettes, and these contents are incorporated into the present specification.

<<物性值等>> <<Physical properties, etc.>>

壓印用硬化性組成物的黏度為20.0mPa.s以下為較佳,15.0mPa.s以下 為更佳,可為11.0mPa.s以下,亦可進一步為9.0mPa.s以下。作為上述黏度的下限值,並無特別限定,但是,例如為4.0mPa.以上,能夠進一步設為5.0mPa.s以上。 The viscosity of the curable composition for imprinting was 20.0 mPa. Below s is better, 15.0mPa. below s For better, it can be 11.0mPa. s or less, it can be further 9.0mPa. below s. The lower limit of the above-mentioned viscosity is not particularly limited, but, for example, it is 4.0 mPa. The above can be further set to 5.0 mPa. s or more.

壓印用硬化性組成物的表面張力(γResist)為29.0mN/m以上為較佳,30.0mN/m以上為更佳,31.0mN/m以上為進一步較佳。藉由使用表面張力較高的壓印用硬化性組成物,提高毛細管力,且能夠進行壓印用硬化性組成物向鑄模圖案的高速填充。作為上述表面張力的上限值,並無特別限定,從賦予與下層膜的關係及噴墨適應性之觀點而言,42.0mN/m以下為較佳,40.0mN/m以下為更佳,亦可為38.0mN/m以下。 The surface tension (γResist) of the curable composition for imprinting is preferably at least 29.0 mN/m, more preferably at least 30.0 mN/m, and still more preferably at least 31.0 mN/m. By using a curable composition for imprint with a high surface tension, the capillary force is increased, and high-speed filling of the curable composition for imprint into the mold pattern can be performed. The upper limit of the surface tension is not particularly limited, but it is preferably 42.0 mN/m or less, more preferably 40.0 mN/m or less, from the viewpoint of imparting a relationship with the underlayer film and inkjet suitability. It can be 38.0mN/m or less.

壓印用硬化性組成物的Ohnishi參數為5.0以下為較佳,4.0以下為更佳,3.7以下為進一步較佳。壓印用硬化性組成物的Ohnishi參數的下限值並無特別限定,例如可為1.0以上,進一步為2.0以上。 The Ohnishi parameter of the curable composition for imprint is preferably 5.0 or less, more preferably 4.0 or less, and still more preferably 3.7 or less. The lower limit of the Ohnishi parameter of the curable composition for imprints is not particularly limited, and may be, for example, 1.0 or more, further 2.0 or more.

對於壓印用硬化性組成物的聚合性化合物,分別將所有構成成分的碳原子、氫原子及氧原子的數代入下述公式從而能夠求出Ohnishi參數。 For the polymerizable compound of the curable imprint composition, the Ohnishi parameter can be obtained by substituting the numbers of carbon atoms, hydrogen atoms, and oxygen atoms of all constituent components into the following formula.

Ohnishi參數=碳原子、氫原子及氧原子的數之和/(碳原子的數-氧原子的數) Ohnishi parameter = the sum of the number of carbon atoms, hydrogen atoms and oxygen atoms / (the number of carbon atoms - the number of oxygen atoms)

壓印用硬化性組成物中所含之聚合性化合物的漢森溶解度參數(HSP)向量的:(i)分散項成分(d成分)為14.0~20.0為較佳,15.0~19.0為更佳,16.0~18.5為進一步較佳;(ii)極性項成分(p成分)為3.5~8.0為較佳,3.8~6.0為更佳,4.0~5.0為進一步較佳; (iii)氫鍵項成分(h成分)為4.0~8.0為較佳,4.7~7.0為更佳,5.2~6.5為進一步較佳。 The Hansen solubility parameter (HSP) vector of the polymerizable compound contained in the curable composition for imprinting: (i) dispersive component (d component) is preferably 14.0 to 20.0, more preferably 15.0 to 19.0, 16.0~18.5 is more preferable; (ii) the polar component (p component) is 3.5~8.0 is better, 3.8~6.0 is better, 4.0~5.0 is further better; (iii) The hydrogen bond item component (h component) is preferably 4.0 to 8.0, more preferably 4.7 to 7.0, and still more preferably 5.2 to 6.5.

HSP向量的分散項成分、極性項成分、氫鍵項成分分別由在後述之實施例中記載之方法設定。計算HSP向量時,該成分為複數個時,至少1種滿足上述範圍為較佳,最大量成分滿足上述範圍為更佳。 The dispersion term component, the polar term component, and the hydrogen bond term component of the HSP vector are respectively set by methods described in Examples described later. When calculating the HSP vector, when there are plural components, at least one of them preferably satisfies the above-mentioned range, and more preferably the largest number of components satisfies the above-mentioned range.

本發明中,壓印用硬化性組成物中的溶劑的含量為壓印用硬化性組成物的5質量%以下為較佳,3質量%以下為更佳,1質量%以下為進一步較佳。 In the present invention, the content of the solvent in the curable imprint composition is preferably not more than 5% by mass, more preferably not more than 3% by mass, and still more preferably not more than 1% by mass of the curable imprint composition.

壓印用硬化性組成物還能夠設為實質上不含有聚合物(重量平均分子量大於1,000為較佳,重量平均分子量大於2,000為更佳,進一步較佳為重量平均分子量大於10,000以上的聚合物)之態樣。實質上不含有聚合物係指,例如,聚合物的含量為壓印用硬化性組成物的0.01質量%以下,0.005質量%以下為較佳,完全不含有為更佳。 The imprint curable composition can also be substantially free of polymers (preferably polymers with a weight average molecular weight of more than 1,000, more preferably more than 2,000, and more preferably polymers with a weight average molecular weight of more than 10,000) the state of mind. Substantially not containing a polymer means, for example, that the polymer content is 0.01% by mass or less, preferably 0.005% by mass or less, and more preferably not contained at all, of the curable imprint curable composition.

作為在本發明中使用之壓印用硬化性組成物的收容容器,能夠使用以往習知的收容容器。又,作為收容容器,以抑制雜質混入原料或組成物中之目的,使用由6種6層樹脂構成容器內壁之多層瓶或將6種樹脂設為7層結構之瓶亦較佳。作為該種容器,例如可舉出日本特開2015-123351號公報中記載之容器。 As a storage container for the imprint curable composition used in the present invention, conventionally known storage containers can be used. Also, as a storage container, for the purpose of preventing impurities from mixing into the raw material or composition, it is also preferable to use a multi-layer bottle whose inner wall is composed of 6 types of 6-layer resins or a bottle with 6 types of resins as a 7-layer structure. As such a container, the container described in Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.

<試劑盒> <kit>

本發明公開試劑盒,其包含壓印用下層膜形成組成物及包含聚合性化合物之壓印用硬化性組成物。 The present invention discloses a kit comprising a composition for forming an underlayer film for imprinting and a curable composition for imprinting containing a polymeric compound.

本發明的試劑盒中,依據脫離成分(由式(r1)或(r2)表示之化合物 或者由式(r1-1)表示之化合物)的漢森溶解度參數與壓印用硬化性組成物的漢森溶解度參數且由下述數學式(H1)計算之△HSP值為5以下為較佳,7.0以下為更佳,5.0以下為進一步較佳、4.0以下為更較佳。作為下限值,可為0,但實際上為0.1以上。 In the kit of the present invention, according to the disengaged component (the compound represented by formula (r1) or (r2) Or the Hansen solubility parameter of the compound represented by the formula (r1-1) and the Hansen solubility parameter of the curable composition for imprinting, and the ΔHSP value calculated from the following mathematical formula (H1) is preferably 5 or less , 7.0 or less is more preferable, 5.0 or less is more preferable, and 4.0 or less is more preferable. Although 0 may be sufficient as a lower limit value, it is actually 0.1 or more.

△HSP=(4.0×△D2+△P2+△H2)0.5......(H1) △HSP=(4.0×△D 2 +△P 2 +△H 2 ) 0.5 ......(H1)

△D為壓印用硬化性組成物的漢森溶解度參數向量的分散項成分與脫離成分的漢森溶解度參數向量的分散項成分之差。 ΔD is the difference between the dispersion term component of the Hansen solubility parameter vector of the imprint curable composition and the dispersion term component of the Hansen solubility parameter vector of the detachment component.

△P為壓印用硬化性組成物的漢森溶解度參數向量的極性項成分與脫離成分的漢森溶解度參數向量的極性項成分之差。 ΔP is the difference between the polar term component of the Hansen solubility parameter vector of the imprint curable composition and the polar term component of the Hansen solubility parameter vector of the detached component.

△H為壓印用硬化性組成物的漢森溶解度參數向量的氫鍵項成分與脫離成分的漢森溶解度參數向量的氫鍵項成分之差。 ΔH is the difference between the hydrogen bond term component of the Hansen solubility parameter vector of the imprint curable composition and the hydrogen bond term component of the Hansen solubility parameter vector of the detached component.

<積層體及其製造方法> <Laminated body and its manufacturing method>

作為本發明的試劑盒的較佳實施形態,可舉出由該試劑盒形成之積層體。本實施形態的積層體具有由上述壓印用下層膜形成組成物形成之下層膜及由上述壓印用硬化性組成物形成且位於上述下層膜的表面之壓印層為較佳。其製造方法並無特別限定,但可舉出包含使用上述試劑盒,在由壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物之製程之製造方法。此時,壓印用硬化性組成物藉由噴墨法(IJ法)適用於上述下層膜的表面為較佳。進而,積層體的製造方法包括在基板上將上述壓印用下層膜形成組成物適用為層狀之製程,且包括將適用為上述層狀之壓印用下層膜形成組成物以80~250℃(150~250℃為較佳)(製程溫度)加熱(烘烤)之製程為較佳。 A preferred embodiment of the kit of the present invention includes a laminate formed from the kit. The laminate according to this embodiment preferably has an underlayer film formed of the above-mentioned imprint underlayer film-forming composition and an imprint layer formed of the above-mentioned curable composition for imprint and located on the surface of the above-mentioned underlayer film. The production method is not particularly limited, but examples include a production method comprising applying the imprint curable composition to the surface of the underlayer film formed from the imprint underlayer film-forming composition using the above-mentioned kit. In this case, it is preferable to apply the curable composition for imprint to the surface of the underlayer film by the inkjet method (IJ method). Furthermore, the method for producing a laminate includes a process of applying the above-mentioned underlayer film-forming composition for imprinting on a substrate in a layered form, and includes applying the above-mentioned underlayer film-forming composition for imprinting at a temperature of 80 to 250° C. (150~250°C is better) (process temperature) heating (baking) process is better.

<硬化物圖案及其製造方法> <Pattern of cured product and its manufacturing method>

本發明的較佳實施形態之硬化物圖案的製造方法使用上述試劑盒製造硬化物圖案,該方法具有:下層膜形成製程,在基板上適用壓印用下層膜形成組成物而形成下層膜;適用製程,在上述下層膜的表面適用壓印用硬化性組成物;鑄模接觸製程,使上述壓印用硬化性組成物與具有用於轉印圖案形狀的圖案之鑄模接觸;光照射製程,向上述壓印用硬化性組成物照射光而形成硬化物;及脫模製程,分離上述硬化物與上述鑄模。 A method for producing a pattern of a cured product according to a preferred embodiment of the present invention uses the above-mentioned kit to manufacture a pattern of a cured product. The method includes: an underlayer film forming process, applying an underlayer film forming composition for imprinting to a substrate to form an underlayer film; The process of applying a curable composition for imprinting to the surface of the above-mentioned underlayer film; the mold contact process of bringing the above-mentioned curable composition for imprint into contact with a mold having a pattern for transferring the shape of the pattern; The curable composition for imprinting is irradiated with light to form a cured product; and the mold release process is to separate the cured product from the casting mold.

以下,按照圖1對形成硬化物圖案之方法(硬化物圖案的製造方法)進行說明。很顯然本發明的結構並不限定於圖示。 Hereinafter, a method of forming a cured product pattern (a method of manufacturing a cured product pattern) will be described with reference to FIG. 1 . It is obvious that the structure of the present invention is not limited to the illustrations.

<<下層膜形成製程>> <<Underlayer Film Formation Process>>

下層膜形成製程中,如圖1中的(1)及(2)所示,在基板1上形成下層膜2。下層膜在基板上將壓印用下層膜形成組成物適用為層狀而形成為較佳。 In the underlayer film forming process, as shown in (1) and (2) in FIG. 1 , an underlayer film 2 is formed on the substrate 1 . The underlayer film is preferably formed by applying the underlayer film-forming composition for imprint in a layered form on the substrate.

作為將壓印用下層膜形成組成物應用於基板上的方法,並無特別限定,能夠採用一般周知的適用方法。具體而言,作為適用方法,例如,例示有浸塗法、氣動塗佈法、簾式塗佈法、線棒塗佈法(wire bar coat)、凹版塗佈法、擠壓塗佈法、旋塗法、狹縫掃描法或噴墨法,旋塗法為較佳。 The method of applying the imprint underlayer film-forming composition to the substrate is not particularly limited, and generally known applicable methods can be employed. Specifically, as the applicable method, for example, dip coating method, pneumatic coating method, curtain coating method, wire bar coating method (wire bar coat), gravure coating method, extrusion coating method, spin coating method, etc. Coating method, slit scanning method or inkjet method, spin coating method is preferred.

又,在基板上將壓印用下層膜形成組成物適用為層狀之後,利用熱揮發(乾燥)溶劑而形成作為薄膜之下層膜。 Also, after applying the composition for forming an underlayer film for imprint in a layered form on a substrate, the solvent is volatilized (dried) by heat to form an underlayer film as a thin film.

下層膜2的厚度為2nm以上為較佳,3nm以上為更佳,4nm以上為進一步較佳,可為5nm以上,亦可為7nm以上。又,下層膜的厚度為40nm以下為較佳,30nm以下為更佳,20nm以下為進一步較佳,可為15nm 以下,進一步可為10nm以下。藉由將膜厚設為上述下限值以上,壓印用硬化性組成物在下層膜上的擴展性(潤濕性)得到提高,能夠形成壓印後的均勻的殘餘膜。藉由將膜厚設為上述上限值以下,存在壓印後的殘餘膜變薄,不易發生膜厚不均,殘餘膜的均勻性得到提高之傾向。 The thickness of the underlayer film 2 is preferably at least 2 nm, more preferably at least 3 nm, more preferably at least 4 nm, may be at least 5 nm, and may be at least 7 nm. Also, the thickness of the underlayer film is preferably 40 nm or less, more preferably 30 nm or less, more preferably 20 nm or less, and may be 15 nm. It may be less than or equal to 10 nm or less. By making the film thickness not less than the above lower limit, the spreadability (wettability) of the curable composition for imprint on the underlayer film is improved, and a uniform residual film after imprinting can be formed. By making the film thickness below the above-mentioned upper limit, the remaining film after imprinting becomes thinner, the film thickness unevenness is less likely to occur, and the uniformity of the remaining film tends to be improved.

作為基板的材質,並無特別限定,能夠參閱日本特開2010-109092號公報(對應US申請的公開號為美國專利申請公開第2011/0183127號說明書)的0103段的記載,該等內容編入本說明書。在本發明中,矽基板、玻璃基板、石英基板、藍寶石基板、矽碳化物(碳化矽)基板、氮化鎵基板、鋁基板、非晶氧化鋁基板、多晶氧化鋁基板以及由GaAsP、GaP、AlGaAs、InGaN、GaN、AlGaN、ZnSe、AlGa、InP或ZnO構成之基板。再者,作為玻璃基板的具體的材料例,可舉出鋁矽酸鹽玻璃、鋁硼矽酸鹽玻璃、鋇硼矽酸鹽玻璃。在本發明中,矽基板為較佳。 The material of the substrate is not particularly limited, and reference can be made to the description in paragraph 0103 of Japanese Patent Application Laid-Open No. 2010-109092 (the publication number corresponding to the US application is US Patent Application Publication No. 2011/0183127 specification), and such contents are incorporated herein. manual. In the present invention, silicon substrates, glass substrates, quartz substrates, sapphire substrates, silicon carbide (silicon carbide) substrates, gallium nitride substrates, aluminum substrates, amorphous alumina substrates, polycrystalline alumina substrates, and GaAsP, GaP , AlGaAs, InGaN, GaN, AlGaN, ZnSe, AlGa, InP or ZnO substrates. In addition, as a specific material example of a glass substrate, aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass are mentioned. In the present invention, a silicon substrate is preferred.

<<適用製程>> <<Applicable process>>

在適用製程中,例如,如圖1中的(3)所示,在上述下層膜2的表面適用壓印用硬化性組成物3。 In the applied process, for example, as shown in (3) in FIG. 1 , a curable composition 3 for imprint is applied to the surface of the above-mentioned underlayer film 2 .

作為壓印用硬化性組成物的適用方法,並無特別限定,能夠參閱日本特開2010-109092號公報(對應US申請的公開號為美國專利申請公開第2011/0199592號說明書)的0102段的記載,該內容編入本說明書。上述壓印用硬化性組成物藉由噴墨法適用於上述下層膜的表面為較佳。又,可以藉由多重塗佈進行壓印用硬化性組成物的塗佈。在藉由噴墨法等在下層膜的表面配置液滴之方法中,液滴的量為1~20pL左右為較佳,液滴隔開間隔配置在下層膜表面為較佳。作為液滴間隔,10~1000μm的間隔為較佳。為 噴墨法的情況下,液滴間隔設為噴墨的噴嘴的配置間隔。 The application method of the curable composition for imprinting is not particularly limited, and reference can be made to paragraph 0102 of Japanese Patent Application Laid-Open No. 2010-109092 (the publication number corresponding to the US application is US Patent Application Publication No. 2011/0199592 specification). The contents are incorporated into this instruction manual. It is preferable that the above-mentioned curable composition for imprint is applied to the surface of the above-mentioned underlayer film by an inkjet method. Also, the coating of the curable composition for imprint can be performed by multiple coating. In the method of arranging liquid droplets on the surface of the lower film by an inkjet method or the like, the amount of the liquid droplets is preferably about 1 to 20 pL, and the droplets are preferably arranged at intervals on the surface of the lower film. As the droplet interval, an interval of 10 to 1000 μm is preferable. for In the case of the inkjet method, the droplet interval is the arrangement interval of nozzles for inkjet.

進而,下層膜2與適用於下層膜上之膜狀的壓印用硬化性組成物3的體積比為1:1~500為較佳,1:10~300為更佳,1:50~200為進一步較佳。 Furthermore, the volume ratio of the lower film 2 to the film-like imprint curable composition 3 applied on the lower film is preferably 1:1 to 500, more preferably 1:10 to 300, and 1:50 to 200. for further improvement.

又,本發明的較佳實施形態之積層體的製造方法為使用本發明的試劑盒製造的方法,該方法包含在由上述壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物之製程。進而,本發明的較佳實施形態之積層體的製造方法包括在基板上將上述壓印用下層膜形成組成物適用為層狀之製程,且包括在80~250℃(150℃以上且250℃以下為較佳)下加熱(烘烤)適用為上述層狀之壓印用下層膜形成組成物之製程為較佳。加熱時間能夠設為30秒鐘~5分鐘。 In addition, the method for producing a laminate according to a preferred embodiment of the present invention is a method for producing a laminate using the kit of the present invention, and the method includes applying an embossing agent for imprinting to the surface of the underlayer film formed from the above-mentioned underlayer film-forming composition for imprinting. The process of hardening composition. Furthermore, the method of manufacturing a laminate according to a preferred embodiment of the present invention includes a process of applying the above-mentioned underlayer film-forming composition for imprinting on a substrate in a layered form, and includes a temperature of 80 to 250° C. It is preferable to apply underheating (baking) to the layered underlayer film-forming composition for imprinting as described below. The heating time can be set to 30 seconds to 5 minutes.

<<鑄模接觸製程>> <<Mold contact process>>

例如,如圖1中的(4)所示,在鑄模接觸製程中,使上述壓印用硬化性組成物3與具有用於轉印圖案形狀的圖案之鑄模4接觸。藉由經過該種製程,獲得所希望的硬化物圖案(壓印圖案)。 For example, as shown in (4) in FIG. 1 , in the mold contact process, the above curable composition for imprint 3 is brought into contact with a mold 4 having a pattern for transferring the shape of the pattern. By going through such a process, a desired cured product pattern (imprint pattern) is obtained.

具體而言,為了在膜狀的壓印用硬化性組成物轉印所希望的圖案,在膜狀的壓印用硬化性組成物3的表面覆蓋鑄模4。 Specifically, in order to transfer a desired pattern to the film-like curable imprint composition, the surface of the film-like curable imprint composition 3 is covered with a mold 4 .

鑄模可為光透射性的鑄模,亦可為非光透射性的鑄模。使用光透射性的鑄模時,從鑄模側向壓印用硬化性組成物3照射光為較佳。另一方面,使用非光透射性的鑄模時,作為基板,使用光透射性基板,並從基板側照射光為較佳。在本發明中,使用光透射性鑄模,從鑄模側照射光為更佳。 The casting mold may be a light-transmitting mold or a non-light-transmitting mold. When using a light-transmitting mold, it is preferable to irradiate the curable imprint composition 3 with light from the side of the mold. On the other hand, when using a non-light-transmitting mold, it is preferable to use a light-transmitting substrate as the substrate and to irradiate light from the substrate side. In the present invention, it is more preferable to use a light-transmitting mold and to irradiate light from the side of the mold.

能夠在本發明中使用之鑄模為具有用於轉印之圖案之鑄模。上述鑄模所具有之圖案例如能夠藉由光刻或電子束掃描法等按照所希望之加工精度 形成,但在本發明中,鑄模圖案製造方法並無特別限定。又,還能夠將藉由本發明的較佳實施形態之硬化物圖案製造方法形成之圖案用作鑄模。 A casting mold that can be used in the present invention is a casting mold having a pattern for transfer. The pattern of the above-mentioned mold can be processed according to the desired processing accuracy by photolithography or electron beam scanning, for example. Formed, but in the present invention, the mold pattern manufacturing method is not particularly limited. Moreover, the pattern formed by the hardened|cured material pattern manufacturing method of the preferable embodiment of this invention can also be used as a mold.

構成在本發明中使用之光透射性鑄模之材料並無特別限定,例示有玻璃、石英、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯樹脂等光透射性樹脂、透明金屬蒸鍍膜、聚二甲基矽氧烷等柔軟膜、光硬化膜、金屬膜等,石英為較佳。 The material constituting the light-transmitting mold used in the present invention is not particularly limited, and examples include light-transmitting resins such as glass, quartz, polymethylmethacrylate (PMMA), and polycarbonate resins, transparent metal vapor-deposited films, and polycarbonate resins. Soft films such as dimethyl siloxane, photohardening films, metal films, etc., preferably quartz.

作為在本發明中使用光透射性基板時使用之非光透射型鑄模材,並無特別限定,只要具有規定強度即可。具體而言,例示有陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等金屬基板、SiC、矽、氮化矽、多晶矽、氧化矽、非晶矽等基板等,但並無特別限定。 The non-light-transmitting molding material used when the light-transmitting substrate is used in the present invention is not particularly limited as long as it has a predetermined strength. Specifically, examples include ceramic materials, vapor-deposited films, magnetic films, reflective films, metal substrates such as Ni, Cu, Cr, and Fe, substrates such as SiC, silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon. It is not particularly limited.

在上述硬化物圖案的製造方法中,使用壓印用硬化性組成物進行壓印微影術時,將鑄模壓力設為10氣壓以下為較佳。藉由將鑄模壓力設為10氣壓以下,存在鑄模或基板不易變形且圖案精度得到提高之傾向。又,從存在由於加壓較低而能夠縮小裝置之傾向之觀點而言亦較佳。鑄模壓力從碰觸鑄模凸部之壓印用硬化性組成物的殘餘膜變少,並且能夠確保鑄模轉印的均勻性之範圍選擇為較佳。 In the above method of producing a cured product pattern, when imprint lithography is performed using the curable composition for imprint, it is preferable to set the mold pressure to 10 atmospheres or less. By setting the mold pressure to 10 atmospheres or less, the mold or the substrate is less likely to be deformed, and pattern accuracy tends to be improved. Moreover, it is also preferable from the viewpoint that there is a tendency to reduce the size of the device due to low pressurization. The mold pressure is preferably selected from a range in which the residual film of the curable composition for imprint that touches the convex portion of the mold is reduced and the uniformity of the mold transfer can be ensured.

又,在氦氣或凝結性氣體或者包含氦氣和凝結性氣體雙方之氛圍下進行壓印用硬化性組成物與鑄模的接觸亦較佳。 In addition, it is also preferable to contact the curable composition for imprint with the mold in an atmosphere containing helium gas or condensable gas or both of helium gas and condensable gas.

<<光照射製程>> <<Light irradiation process>>

在光照射製程中,向上述壓印用硬化性組成物照射光而形成硬化物。光照射製程中的光照射的照射量只要充分大於硬化所需的最小限的照射量即可。硬化所需的照射量藉由調查壓印用硬化性組成物的不飽和鍵的消耗量 等而適當進行確定。 In the light irradiation process, light is irradiated to the curable imprint composition to form a cured product. The irradiation amount of light irradiation in the photoirradiation process should just be sufficiently larger than the minimum irradiation amount required for hardening. Irradiation dose required for curing by investigating the consumption of unsaturated bonds in the curable composition for imprint Wait and make a determination as appropriate.

照射之光的種類並無特別限定,例示有紫外光。 The type of light to be irradiated is not particularly limited, and ultraviolet light is exemplified.

又,在適用於本發明之壓印微影術中,光照射時的基板溫度通常設為室溫,但為了提高反應性,亦可加熱的同時進行光照射。作為光照射的準備階段,若設為真空狀態,則在防止混入氣泡、抑制因混入氧而引起之反應性降低、鑄模與壓印用硬化性組成物的密接性提高上有效果,因此可以在真空狀態下進行光照射。又,上述硬化物圖案製造方法中,光照射時的較佳真空度為10-1Pa至正常壓力的範圍。 In addition, in the imprint lithography applied to the present invention, the temperature of the substrate during light irradiation is usually room temperature, but light irradiation may be performed while heating in order to improve reactivity. As a preparatory stage for light irradiation, if it is in a vacuum state, it is effective in preventing air bubbles from being mixed in, suppressing a decrease in reactivity due to oxygen being mixed in, and improving the adhesion between the mold and the curable composition for imprinting. Light irradiation was performed in a vacuum state. In addition, in the above-mentioned method for producing a cured product pattern, a preferable vacuum degree during light irradiation is in the range of 10 −1 Pa to normal pressure.

進行曝光時,將曝光照度設為1~500mW/cm2範圍為較佳,設為10~400mW/cm2範圍為更佳。曝光的時間並無特別限定,0.01~10秒為較佳,0.5~1秒為更佳。曝光量設為5~1000mJ/cm2範圍為較佳,設為10~500mJ/cm2範圍為更佳。 When performing exposure, the exposure illuminance is preferably in the range of 1 to 500 mW/cm 2 , more preferably in the range of 10 to 400 mW/cm 2 . The exposure time is not particularly limited, but is preferably 0.01 to 10 seconds, more preferably 0.5 to 1 second. The exposure amount is preferably in the range of 5~1000mJ/cm 2 , more preferably in the range of 10~500mJ/cm 2 .

在上述硬化物圖案製造方法中,在硬化藉由光照射膜狀的壓印用硬化性組成物(圖案形成層)之後,依據需要,還可包含對硬化之圖案加熱並再進行硬化之製程。作為用於在光照射後加熱硬化壓印用硬化性組成物的溫度,150~280℃為較佳,200~250℃為更佳。又,作為施加熱之時間,5~60分鐘為較佳,15~45分鐘為進一步較佳。 In the above method of producing a pattern of a cured product, after curing the film-like curable composition for imprint (pattern forming layer) by irradiation with light, a process of heating and further curing the cured pattern may be included as necessary. As a temperature for heating and hardening the curable composition for imprints after light irradiation, 150-280 degreeC is preferable, and 200-250 degreeC is more preferable. In addition, the time for applying heat is preferably 5 to 60 minutes, more preferably 15 to 45 minutes.

<<脫模製程>> <<Demolding process>>

在脫模製程中,分離上述硬化物與上述鑄模(圖1中的(5))。獲得之硬化物圖案如後述能夠利用於各種用途。 In the demoulding process, the above-mentioned cured product and the above-mentioned mold are separated ((5) in FIG. 1 ). The obtained cured product pattern can be utilized for various purposes as described later.

亦即,在本發明中公開有在上述下層膜的表面還具有由壓印用硬化性組成物形成之硬化物圖案之積層體。又,包含在本發明中使用之壓印用硬化 性組成物之圖案形成層的膜厚依據使用之用途而不同,但為0.01μm~30μm左右。 That is, the present invention discloses a laminate having, on the surface of the above-mentioned underlayer film, a cured product pattern formed of a curable composition for imprinting. In addition, the embossing hardener used in the present invention includes The film thickness of the pattern-forming layer of the active composition varies depending on the application, but is about 0.01 μm to 30 μm.

另外,如後述,還能夠進行蝕刻等。 In addition, as described later, etching and the like can also be performed.

<硬化物圖案與其適用> <Hardened pattern and its application>

如上所述,藉由上述硬化物圖案的製造方法形成之硬化物圖案能夠用作使用於液晶顯示裝置(LCD)等中之永久膜或半導體元件製造用蝕刻抗蝕劑(微影術用遮罩)。 As described above, the cured product pattern formed by the above-mentioned method for producing a cured product pattern can be used as a permanent film used in a liquid crystal display device (LCD) or the like, or as an etching resist (mask for lithography) for semiconductor element production. ).

尤其,在本發明中公開電路基板的製造方法,該方法包含藉由本發明的較佳實施形態之硬化物圖案的製造方法獲得硬化物圖案之製程。進而,本發明的較佳實施形態之電路基板的製造方法中,可具有將藉由上述硬化物圖案的製造方法獲得之硬化物圖案作為遮罩在基板上進行蝕刻或離子植入之製程及形成電子構件之製程。上述電路基板係半導體元件為較佳。進而,在本發明中公開電子設備的製造方法,該方法具有藉由上述電路基板的製造方法獲得電路基板之製程及將上述電路基板與控制上述電路基板之控制機構連結之製程。 In particular, the present invention discloses a method of manufacturing a circuit board including a process of obtaining a cured product pattern by the method of manufacturing a cured product pattern according to a preferred embodiment of the present invention. Furthermore, in the method of manufacturing a circuit board according to a preferred embodiment of the present invention, there may be a process and formation of etching or ion implantation on a substrate using the cured product pattern obtained by the above-mentioned method of manufacturing a cured product pattern as a mask. Manufacturing process of electronic components. It is preferable that the above-mentioned circuit board is a semiconductor element. Furthermore, the present invention discloses a method of manufacturing an electronic device, which includes a process for obtaining a circuit board by the method for manufacturing the circuit board and a process for connecting the circuit board to a control mechanism that controls the circuit board.

又,利用藉由上述硬化物圖案製造方法形成之圖案在液晶顯示裝置的玻璃基板形成網格圖案,藉此能夠廉價地製造反射或吸收較少,且大屏幕尺寸(例如55英吋、大於60英吋)的偏光板。例如,能夠製造日本特開2015-132825號公報或國際公開第2011/132649號中記載之偏光板。再者,1英吋為25.4mm。 In addition, by using the pattern formed by the above-mentioned cured product pattern manufacturing method to form a grid pattern on the glass substrate of the liquid crystal display device, it is possible to cheaply manufacture a large screen size (for example, 55 inches, greater than 60 inches) with less reflection or absorption. inches) polarizer. For example, a polarizing plate described in JP-A-2015-132825 or WO2011/132649 can be produced. Furthermore, 1 inch is 25.4mm.

如圖1中的(6)、圖1中的(7)所示,由本發明形成之硬化物圖案作為蝕刻抗蝕劑(微影術用遮罩)亦有用。將硬化物圖案用作蝕刻抗蝕劑時, 首先,作為基板使用例如形成SiO2等薄膜之矽基板(矽晶圓等)等,且藉由上述硬化物圖案製造方法在基板上例如形成奈米或微米級微細的硬化物圖案。在本發明中,尤其能夠形成奈米級的微細圖案,進而在還能夠形成尺寸為50nm以下,尤其為30nm以下的圖案之一點上有效。關於由上述硬化物圖案製造方法形成之硬化物圖案的尺寸的下限值並無特別限定,例如,能夠設為1nm以上。 As shown in (6) in FIG. 1 and (7) in FIG. 1 , the cured product pattern formed by the present invention is also useful as an etching resist (mask for lithography). When using a cured product pattern as an etching resist, first, use a silicon substrate (silicon wafer, etc.) on which a thin film such as SiO 2 is formed as a substrate, and form, for example, a nano Or a micron-level fine hardened pattern. In the present invention, it is particularly effective in that it is possible to form a fine pattern on the nanometer order, and furthermore, a pattern with a size of 50 nm or less, especially 30 nm or less, can be formed. The lower limit of the size of the cured product pattern formed by the above-mentioned cured product pattern manufacturing method is not particularly limited, for example, it can be set to 1 nm or more.

作為較佳實施形態,亦可舉出具有藉由硬化物圖案的製造方法在基板上獲得硬化物圖案之製程及使用所獲得之上述硬化物圖案在上述基板進行蝕刻之製程之壓印用鑄模的製造方法。 As a preferred embodiment, there are also examples of an imprint mold having a process of obtaining a cured product pattern on a substrate by a method of producing a cured product pattern and a process of etching the above substrate using the obtained cured product pattern. Manufacturing method.

濕式蝕刻時使用氟化氫等進行蝕刻,乾式蝕刻時使用CF4等蝕刻氣體進行蝕刻,藉此能夠在基板上形成所希望的硬化物圖案。硬化物圖案尤其對乾式蝕刻之蝕刻耐性良好。亦即,藉由上述硬化物圖案製造方法形成之圖案較佳地用作微影術用遮罩。 Etching using hydrogen fluoride or the like during wet etching and etching using an etching gas such as CF4 during dry etching can form a desired cured product pattern on the substrate. The hardened pattern has good etching resistance especially to dry etching. That is, the pattern formed by the above-mentioned hardened product pattern manufacturing method is preferably used as a mask for lithography.

圖2係示意地表示藉由噴墨法在下層膜的表面塗佈壓印用硬化性組成物之情況下的壓印用硬化性組成物的潤濕擴展狀態之俯視圖。壓印用硬化性組成物藉由噴墨(IJ)法適用時,例如,如圖2所示,在下層膜21的表面以等間隔滴加壓印用硬化性組成物22的液滴(圖2中的(a))。若在此接觸鑄模,則上述液滴在下層膜21上擴展,從而成為膜狀的壓印用硬化性組成物22a、22b、22c(圖2中的(b)、圖2中的(c)、圖2中的(d))。然而,壓印用硬化性組成物不會均勻地擴展,例如,若在圖2中的(c)中潤濕擴展停止,則在下層膜21上形成壓印用硬化性組成物22b的狀態沒有完全擴展之膜。亦即,有時存在膜厚較薄或沒有膜的區域23的情況。如此, 則在鑄模的圖案上產生未充分填充壓印用硬化性組成物之部分,從而導致在壓印層產生沒有圖案的部分。例如,在將如上的將局部中有缺損或存在厚度不充分的部分之壓印層的圖案作為遮罩實施蝕刻時,在膜厚較薄的區域至沒有膜的區域23與除此之外的區域22b中發生蝕刻不均,從而很難遍及整個壓印區域均勻地蝕刻並轉印所希望的圖案形狀。 Fig. 2 is a plan view schematically showing the wetting and spreading state of the curable imprint composition when the curable imprint composition is applied to the surface of the underlayer film by an inkjet method. When the curable composition for imprint is applied by the inkjet (IJ) method, for example, as shown in FIG. (a) in 2). If the mold is contacted here, the above-mentioned droplet spreads on the lower layer film 21, thereby forming film-like imprint curable compositions 22a, 22b, 22c ((b) in FIG. 2, (c) in FIG. 2 , (d) in Figure 2). However, the curable composition for imprint does not spread uniformly. For example, if the wetting and spreading stops in (c) in FIG. Fully expanded membrane. That is, there may be a region 23 where the film thickness is thin or there is no film. in this way, Then, a part where the imprint curable composition is not sufficiently filled occurs on the pattern of the mold, resulting in a part without a pattern in the imprint layer. For example, when etching is carried out using the pattern of the above imprint layer with partial defects or insufficient thickness as a mask, the area from the thinner film thickness to the film-free area 23 and the other areas are etched. Etching unevenness occurs in the region 22b, making it difficult to uniformly etch and transfer a desired pattern shape over the entire imprint region.

相對於此,依本發明的壓印用下層膜形成組成物形成之下層膜與壓印用硬化性組成物的表面張力得到改善且潤濕性得到提高。因此,成為更可靠地擴展到圖2中的(d)的狀態的各個角落之壓印用硬化性組成物22c。其結果,壓印用硬化性組成物遍及整體可靠且充分填充於鑄模,在所形成之壓印層中,能夠實現厚度上沒有不均的良好的圖案化。又,藉由填充性的提高能夠進行高速壓印,進而帶來處理量的改善。 On the other hand, according to the imprint underlayer film-forming composition of the present invention, the surface tension between the underlayer film and the imprint curable composition is improved, and the wettability is improved. Therefore, the imprint curable composition 22c is more reliably spread to every corner of the state of (d) in FIG. 2 . As a result, the curable composition for imprint is reliably and sufficiently filled in the mold throughout the entirety, and in the formed imprint layer, good patterning without unevenness in thickness can be realized. In addition, high-speed imprinting can be performed by improving the fillability, which in turn leads to an improvement in throughput.

再者,在上述說明中,舉出藉由噴墨法在下層膜上適用壓印用硬化性組成物之例子對本發明的較佳實施形態之作用機制進行說明,但本發明並不被此限定而解釋。例如,網版塗佈或旋塗等中,良好的潤濕性和優異之填充性亦與加工上及產品品質上的優點相關,能夠適當地發揮發明效果。 In addition, in the above description, the example of applying the curable composition for imprint on the underlayer film by the inkjet method was used to describe the mechanism of action of the preferred embodiment of the present invention, but the present invention is not limited thereto. And explain. For example, in screen coating, spin coating, etc., good wettability and excellent fillability are also related to advantages in processing and product quality, and can appropriately exert the effects of the invention.

具體而言,由本發明形成之圖案能夠較佳地使用於導引圖案等的製作,該導引圖案用於使用如下的自己組織化之微細圖案形成(directed self-assembly、DSA(定向自己組裝)),亦即磁盤等的記錄媒體、固體攝像元件等受光元件、LED(light emitting diode(發光二極管))或有機EL(有機電致發光)等發光元件、液晶顯示裝置(LCD)等光器件、衍射光柵、浮雕全息、光波導、濾光器、微透鏡陣列等光學組件、薄膜晶體管、有機晶體管、濾色器、防反射膜、偏光板、偏光元件、光學膜、柱材等平板顯示器用構件、 奈米生物器件、免疫分析晶片、脫氧核糖核酸(DNA)分離晶片、微反應器、光子液晶、嵌段共聚物。 Specifically, the pattern formed by the present invention can be preferably used in the production of a guide pattern for fine pattern formation (directed self-assembly, DSA (directed self-assembly) using the following self-organization, etc. ), that is, recording media such as magnetic disks, light-receiving elements such as solid-state imaging elements, light-emitting elements such as LED (light emitting diode) or organic EL (organic electroluminescence), optical devices such as liquid crystal display devices (LCD), Optical components such as diffraction gratings, relief holograms, optical waveguides, optical filters, microlens arrays, thin film transistors, organic transistors, color filters, antireflection films, polarizers, polarizing elements, optical films, pillars, and other components for flat panel displays , Nanobiological devices, immunoassay chips, deoxyribonucleic acid (DNA) separation chips, microreactors, photonic liquid crystals, block copolymers.

[實施例] [Example]

以下舉出實施例進一步對本發明進行具體說明。以下實施例中所示出之材料、使用量、比例、處理內容、處理順序等只要不脫離本發明的主旨,能夠適當進行變更。因此,本發明的範圍並不限定於以下所示出之具體例。 The following examples are given to further describe the present invention in detail. Materials, usage amounts, proportions, processing contents, processing procedures and the like shown in the following examples can be appropriately changed unless departing from the gist of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below.

<聚合物G-1的合成例> <Synthesis Example of Polymer G-1>

向流動有N2之三口燒瓶加入甲醇(MeOH)(300g)、5-Bromoisophthalic Acid(5-溴異酞酸)(Tokyo Chemical Industry Co.,Ltd.製、10g)、濃硫酸(1mL),並加溫到90℃且進行了4小時熟化。之後,進行了減壓濃縮。向分液漏斗加入濃縮物和乙酸乙酯(500g)、3%碳酸氫鈉水溶液(300g)並進行了攪拌。濃縮有機層而合成了目標化合物(中間物G-1A)。 Methanol (MeOH) (300 g), 5-Bromoisophthalic Acid (5-bromoisophthalic acid) (manufactured by Tokyo Chemical Industry Co., Ltd., 10 g), concentrated sulfuric acid (1 mL) were added to a three-necked flask flowing with N 2 , and It heated to 90 degreeC, and performed aging for 4 hours. Thereafter, concentration under reduced pressure was performed. The concentrate, ethyl acetate (500 g), and 3% aqueous sodium bicarbonate solution (300 g) were put into a separating funnel, and stirred. The target compound (intermediate G-1A) was synthesized by concentrating the organic layer.

向流動有N2之三口燒瓶加入四氫呋喃(THF)(300g)、G-1A(10g),冷卻到0℃,並一點一點地加入LiAlH4(FUJIFILM Wako Pure Chemical Corporation製、3g),且進行了2小時熟化。之後,加入水(3g)、15%氫氧化鈉水溶液(3g)、水(9g),並進行了1小時熟化。之後,藉由進行過濾並濃縮濾液而合成了目標化合物(中間物G-1B)。 Tetrahydrofuran (THF) (300 g) and G-1A (10 g) were charged into a three-necked flask flowing with N 2 , cooled to 0° C., and LiAlH 4 (manufactured by FUJIFILM Wako Pure Chemical Corporation, 3 g) was added little by little, and Aging was carried out for 2 hours. Then, water (3 g), 15% sodium hydroxide aqueous solution (3 g), and water (9 g) were added, and aging was performed for 1 hour. After that, the target compound (intermediate G-1B) was synthesized by performing filtration and concentrating the filtrate.

向流動有N2之三口燒瓶加入DMF(300g)、咪唑(8g)、G-1B(10g),冷卻到0℃並一點一點地加入tert-Butyldimethylchlorosilane(Tokyo Chemical Industry Co.,Ltd.製、18g),且進行了2小時熟化。之後,進行了加壓濃縮。向分液漏斗加入濃縮物和乙酸乙酯(500g)、3%碳酸氫鈉水溶液 (300g)並進行了攪拌。濃縮有機層並由矽膠色層法進行純化而合成了目標化合物(中間物G-1C)。 Add DMF (300 g), imidazole (8 g), and G-1B (10 g) to a three-necked flask flowing with N , cool to 0° C. and add tert-Butyldimethylchlorosilane (manufactured by Tokyo Chemical Industry Co., Ltd.) little by little. , 18g), and aged for 2 hours. Thereafter, concentration under pressure was carried out. The concentrate, ethyl acetate (500 g), and 3% aqueous sodium bicarbonate solution (300 g) were put into a separating funnel, and stirred. The organic layer was concentrated and purified by silica gel chromatography to synthesize the target compound (intermediate G-1C).

向流動有N2之三口燒瓶加入Mg(1g)、G-1C(10g)、THF(100g),冷卻到0℃並進行了1小時熟化。之後,一點一點地加入丙酮(2g),並進行了2小時熟化。之後,進行了減壓濃縮。向分液漏斗加入濃縮物和乙酸乙酯(500g)、3%碳酸氫鈉水溶液(300g)並進行了攪拌。濃縮有機層並由矽膠色層法進行純化而合成了目標化合物(中間物G-1D)。 Mg (1 g), G-1C (10 g), and THF (100 g) were charged into a three-necked flask flowing with N 2 , cooled to 0° C., and aged for 1 hour. Thereafter, acetone (2 g) was added little by little, and aging was performed for 2 hours. Thereafter, concentration under reduced pressure was performed. The concentrate, ethyl acetate (500 g), and 3% aqueous sodium bicarbonate solution (300 g) were put into a separating funnel, and stirred. The organic layer was concentrated and purified by silica gel chromatography to synthesize the target compound (intermediate G-1D).

向流動有N2之三口燒瓶加入G-1D(10g)、環己烷(100g),冷卻到0℃,並滴加20%丁基鋰環己烷溶液(Tokyo Chemical Industry Co.,Ltd.製、12mL)且進行了1小時熟化。之後,滴加甲基丙烯醯氯(Tokyo Chemical Industry Co.,Ltd.製、3g)並進行了1小時熟化。之後,加入THF(100g)、1M HCl水溶液,並進行了5小時熟化。之後,加入乙酸乙酯(1000g)、3%碳酸氫鈉水溶液(300g)並進行了攪拌。濃縮有機層並由矽膠色層法進行純化而合成了目標化合物(中間物G-1E)。 Add G-1D (10 g) and cyclohexane (100 g) to a three-necked flask flowing with N 2 , cool to 0° C., and dropwise add 20% butyllithium cyclohexane solution (manufactured by Tokyo Chemical Industry Co., Ltd. , 12mL) and aged for 1 hour. Thereafter, methacryl chloride (manufactured by Tokyo Chemical Industry Co., Ltd., 3 g) was added dropwise, followed by aging for 1 hour. Thereafter, THF (100 g) and 1M aqueous HCl solution were added, followed by aging for 5 hours. Then, ethyl acetate (1000g) and 3% sodium bicarbonate aqueous solution (300g) were added and stirred. The organic layer was concentrated and purified by silica gel chromatography to synthesize the target compound (intermediate G-1E).

向流動有N2之三口燒瓶加入PGMEA(30g)並加溫到60℃。在PGMEA(70g)中溶解2-Hydroxyethyl Methacrylate(甲基丙烯酸2-羥乙酯)(Tokyo Chemical Industry Co.,Ltd.製、13g、100mmol)、G-1E(26g、100.0mmol)、光自由基聚合起始劑(FUJIFILM Wako Pure Chemical Corporation製、V-65、1.0g、4.0mmol),並在上述燒瓶的內部溫度不超過65℃之溫度下經2小時滴加所獲得之混合物,並且在90℃下進行了4小時熟化。之後,冷卻到25℃。向另一三口燒瓶加入二異丙醚(435.5g)及己烷(186.6g),冷卻到0℃並進行了攪拌。在不超過5℃之溫度下經30分鐘向另一三口燒 瓶的混合液滴加上述燒瓶中的反應液,並進行了1小時攪拌。之後,靜置1小時,進行了減壓過濾。藉由減壓乾燥所獲得之粉末而合成了目標化合物(中間物G-1F)。 PGMEA (30 g) was added to a three-necked flask flowing with N 2 and heated to 60°C. Dissolve 2-Hydroxyethyl Methacrylate (2-hydroxyethyl methacrylate) (manufactured by Tokyo Chemical Industry Co., Ltd., 13g, 100mmol), G-1E (26g, 100.0mmol), photoradical in PGMEA (70g) A polymerization initiator (manufactured by FUJIFILM Wako Pure Chemical Corporation, V-65, 1.0 g, 4.0 mmol), and the obtained mixture was added dropwise at a temperature at which the internal temperature of the above-mentioned flask did not exceed 65° C. over 2 hours, and at 90 The aging was carried out at ℃ for 4 hours. Afterwards, it was cooled to 25°C. Diisopropyl ether (435.5g) and hexane (186.6g) were added to another three-necked flask, and it cooled to 0 degreeC and stirred. The reaction solution in the above-mentioned flask was added dropwise to the mixed solution in another three-necked flask at a temperature not exceeding 5° C. over 30 minutes, and stirred for 1 hour. Thereafter, it was left still for 1 hour, and filtered under reduced pressure. The target compound (Intermediate G-1F) was synthesized by drying the obtained powder under reduced pressure.

向流動有N2之三口燒瓶加入PGMEA(45.38g)、中間物G-1F(19.7g、100.0mmol)、三乙胺(Tokyo Chemical Industry Co.,Ltd.製、15g、150.0mmol),並冷卻到0℃。混合PGMEA(45.38g)及Acryloyl Choride(丙烯醯氯)(14g、150.0mmol),並在上述燒瓶的內部溫度不超過10℃之溫度下經2小時滴加,並且在20℃下進行了4小時熟化。之後,冷卻到0℃。向另一三口燒瓶加入二異丙醚(435.5g)及己烷(186.6g),冷卻到0℃並進行了攪拌。在不超過5℃之溫度下經30分鐘向另一三口燒瓶的混合液滴加上述燒瓶中的反應液,並進行了1小時攪拌。之後,靜置1小時,進行了減壓過濾。藉由水洗所獲得之粉末,並進行減壓乾燥,從而合成了目標化合物G-1。 PGMEA (45.38 g), intermediate G-1F (19.7 g, 100.0 mmol), and triethylamine (manufactured by Tokyo Chemical Industry Co., Ltd., 15 g, 150.0 mmol) were charged into a three-necked flask flowing with N 2 , and cooled to 0°C. PGMEA (45.38g) and Acryloyl Choride (acryloyl chloride) (14g, 150.0mmol) were mixed and added dropwise over 2 hours while the internal temperature of the above-mentioned flask did not exceed 10°C, and was carried out at 20°C for 4 hours. mature. Afterwards, it was cooled to 0°C. Diisopropyl ether (435.5g) and hexane (186.6g) were added to another three-necked flask, and it cooled to 0 degreeC and stirred. The reaction solution in the above-mentioned flask was added dropwise to the mixed solution in another three-necked flask at a temperature not exceeding 5° C. over 30 minutes, and stirred for 1 hour. Thereafter, it was left still for 1 hour, and filtered under reduced pressure. The obtained powder was washed with water and dried under reduced pressure to synthesize target compound G-1.

其他聚合物效仿上述合成例而進行了合成。 Other polymers were synthesized following the above-mentioned synthesis examples.

<下層膜形成組成物的製備> <Preparation of Underlayer Film Forming Composition>

如下表1~4所示摻合各成分,利用孔徑0.1μm的聚四氟乙烯(PTFE)過濾器和孔徑0.003μm的UPE過濾器(超高分子量聚乙烯)實施兩個階段之過濾,製備出示於實施例及比較例之壓印用下層膜形成組成物。在表1~4內一併標記組合使用之壓印用硬化性組成物的序號。 The ingredients are blended as shown in Tables 1 to 4 below, and two-stage filtration is performed using a polytetrafluoroethylene (PTFE) filter with a pore size of 0.1 μm and a UPE filter (ultra-high molecular weight polyethylene) with a pore size of 0.003 μm to prepare The composition for forming the underlayer film for imprint in Examples and Comparative Examples. In Tables 1 to 4, mark the serial numbers of the curable imprint compositions used in combination.

<在80℃下烘烤時的脫離成分的確認方法> <Confirmation of detached components when baked at 80°C>

在矽晶圓(直徑8英吋)上旋塗壓印用下層膜形成組成物。之後,以80℃、3分鐘、空氣氛圍的烘烤條件下使用加熱板加熱而在晶圓上形成了下 層膜。所獲得之下層膜的厚度約為10nm。將所獲得之下層膜在四氫呋喃(THF)中浸漬30分鐘,並利用LC/MS分析所獲得之THF溶液。 The underlayer film-forming composition for imprinting was spin-coated on a silicon wafer (diameter 8 inches). Afterwards, under the baking conditions of 80°C, 3 minutes, and air atmosphere, a heating plate was used to form a lower layer on the wafer. layer film. The thickness of the obtained underlayer film was about 10 nm. The obtained lower film was immersed in tetrahydrofuran (THF) for 30 minutes, and the obtained THF solution was analyzed by LC/MS.

如此,確認了是否檢測出由式(r1)或(r2)或者由式(r1-1)表示且分子量為210以上的化合物。 In this way, it was confirmed whether or not a compound represented by formula (r1) or (r2) or formula (r1-1) and having a molecular weight of 210 or more was detected.

在後述之聚合物的下方由虛線包圍之化合物為進行了脫離之化合物。關於聚合物H-1~H-3,未確認到分子量210以上的化合物的脫離。關於聚合物H-3,未確認到由式(r1)或(r2)表示之化合物或者由式(r1-1)表示之化合物的脫離。 Compounds surrounded by dotted lines below the polymers described later are compounds that have undergone detachment. With regard to polymers H-1 to H-3, detachment of a compound having a molecular weight of 210 or more was not confirmed. Regarding polymer H-3, detachment of the compound represented by formula (r1) or (r2) or the compound represented by formula (r1-1) was not confirmed.

<壓印用硬化性組成物的製備> <Preparation of Curable Composition for Imprint>

混合表5所示之各化合物,進而作為聚合抑制劑將4-羥基-2,2,6,6-四甲基哌啶-1-氧基自由基(Tokyo Chemical Industry Co.,Ltd.製)以相對於示於表內之化合物中的聚合性化合物的總計量成為200質量ppm(0.02質量%)的方式加入來進行製備,從而獲得了壓印用硬化性組成物。對此利用孔徑0.1μm的聚四氟乙烯(PTFE)過濾器及孔徑0.003μm的UPE(超高分子量聚乙烯)過濾器實施兩個階段之過濾。 The compounds shown in Table 5 were mixed, and 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl radical (manufactured by Tokyo Chemical Industry Co., Ltd.) The total amount of the polymerizable compound among the compounds shown in the table was added so as to be 200 mass ppm (0.02 mass %), and the curable composition for imprint was obtained. For this purpose, two-stage filtration was performed using a polytetrafluoroethylene (PTFE) filter with a pore size of 0.1 μm and a UPE (ultrahigh molecular weight polyethylene) filter with a pore size of 0.003 μm.

<表面張力> <surface tension>

表面張力使用Kyowa Interface Science Co.,Ltd製、表面張力儀SURFACE TENS-IOMETER CBVP-A3,且利用玻璃板在23℃下進行了測量。單位由mN/m表示。每1水準製作2個試樣,且分別測量3次,並將總計6次的算數平均值採用為評價值。 The surface tension was measured at 23° C. using a glass plate using a surface tensiometer SURFACE TENS-IOMETER CBVP-A3 manufactured by Kyowa Interface Science Co., Ltd. The unit is represented by mN/m. Two samples were prepared per one level, and each was measured three times, and the arithmetic mean value of the six times in total was adopted as an evaluation value.

<漢森溶解度參數間距離(△HSP)的計算> <Calculation of distance between Hansen solubility parameters (△HSP)>

漢森溶解度參數利用HSP計算軟件HSPiP進行了計算。 Hansen solubility parameters were calculated using the HSP calculation software HSPiP.

以SMILES形式將各化合物的結構式輸入到上述軟件,藉此計算了漢森溶解度參數的各成分(d成分、p成分、h成分)。關於計算出之漢森溶解度參數,依據需要計算成分之間的漢森溶解度參數間距離(△HSP:△D、△P、△H)。 The structural formula of each compound was input into the above-mentioned software in the SMILES format, thereby calculating each component (d component, p component, h component) of the Hansen solubility parameter. Regarding the calculated Hansen solubility parameters, the Hansen solubility parameter inter-distances (ΔHSP: ΔD, ΔP, ΔH) between components are calculated as necessary.

△HSP=(4.0×△D2+△P2+△H2)0.5......(H1) △HSP=(4.0×△D 2 +△P 2 +△H 2 ) 0.5 ......(H1)

在各計算對象成分中存在複數個化合物時(例如,脫離成分為2種以上時等)、漢森溶解度參數採用該化合物中最大量成分(質量基準)的值。再者,最大量成分為2種以上時,設為(基於混合比之平均值)。 When there are multiple compounds in each calculation target component (for example, when there are two or more detached components, etc.), the Hansen solubility parameter adopts the value of the largest component (mass basis) in the compound. In addition, when there are 2 or more types of components in the maximum quantity, it shall be (the average value based on a mixing ratio).

表1~4中示出由式(H1)計算之脫離成分與硬化性組成物的漢森溶解度參數的距離(△HSP)。 Tables 1 to 4 show the distance (ΔHSP) between the disengaged component and the Hansen solubility parameter of the curable composition calculated from the formula (H1).

<分子量的測量方法> <Measuring method of molecular weight>

聚合物的重量平均分子量(Mw)依據凝膠滲透色譜法(GPC測量)定義為聚苯乙烯換算值。裝置使用HLC-8220(TOSOH CORPORATION製),作為管柱使用了保護管柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000及TSKgel Super HZ2000(TOSOH CORPORATION製)。溶析液使用了THF(四氫呋喃)。檢測使用了UV線(紫外線)的波長254nm檢測器。 The weight average molecular weight (Mw) of the polymer is defined as a polystyrene-equivalent value based on gel permeation chromatography (GPC measurement). HLC-8220 (manufactured by TOSOH CORPORATION) was used as an apparatus, and guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION) were used as columns. As an eluent, THF (tetrahydrofuran) was used. Detection uses a wavelength 254nm detector of UV rays (ultraviolet rays).

<密接性> <Adhesiveness>

在矽晶圓(直徑8英吋)上旋塗了壓印用下層膜形成組成物。之後,在150℃、3分鐘、空氣氛圍的烘烤條件下使用加熱板加熱而在晶圓上形成了下層膜。所獲得之下層膜的厚度約為10nm。 An underlayer film-forming composition for imprint was spin-coated on a silicon wafer (8 inches in diameter). Thereafter, under baking conditions of 150° C., 3 minutes, and an air atmosphere, heating was performed using a hot plate to form an underlayer film on the wafer. The thickness of the obtained underlayer film was about 10 nm.

在下層膜的表面上,利用FUJIFILM Dimatix公司製噴墨打印機DMP- 2831,按每個噴嘴1pL的液滴量噴出調整為23℃溫度之壓印用硬化性組成物,在上述下層膜上以液滴成為約100μm間隔的方形陣列的方式進行了塗佈。 On the surface of the lower film, use the inkjet printer DMP- 2831, a curable imprint composition adjusted to a temperature of 23°C was discharged at a droplet volume of 1 pL per nozzle, and the droplet was coated in a square array at intervals of about 100 μm on the above-mentioned underlayer film.

在其上以與壓印用硬化性組成物層相接的方式搭載石英鑄模(矩形線/間隔圖案(1/1)、線寬40nm、槽深度100nm、線邊緣粗糙度3.5nm),從石英晶圓側使用高壓汞燈並在300mJ/cm2的條件下進行了曝光。曝光後、分離石英晶圓,測量了此時的剝離力。 A quartz mold (rectangular line/space pattern (1/1), line width 40nm, groove depth 100nm, line edge roughness 3.5nm) was mounted on it so as to be in contact with the curable composition layer for imprinting. The wafer side was exposed at 300mJ/cm 2 using a high pressure mercury lamp. After the exposure, the quartz wafer was separated, and the peeling force at that time was measured.

該剝離力相當於密接力F(單位:N)。剝離力依照日本特開2011-206977號公報的0102~0107段中記載之比較例之剝離力的測量方法進行了測量。亦即,按照上述公報的圖5的剝離步驟1~6及16~18進行。 This peeling force corresponds to the adhesion force F (unit: N). The peel force was measured according to the method of measuring the peel force of the comparative example described in paragraphs 0102 to 0107 of JP-A-2011-206977. That is, it carried out according to peeling steps 1-6 and 16-18 of FIG. 5 of said publication.

A:F

Figure 108107340-A0305-02-0064-49
45N A:F
Figure 108107340-A0305-02-0064-49
45N

B:45N>F

Figure 108107340-A0305-02-0064-50
30N B: 45N>F
Figure 108107340-A0305-02-0064-50
30N

C:30N>F

Figure 108107340-A0305-02-0064-51
20N C: 30N>F
Figure 108107340-A0305-02-0064-51
20N

D:20N>F D: 20N>F

<潤濕性的評價> <Evaluation of wettability>

矽晶圓(直徑8英吋)上旋塗了壓印用下層膜形成組成物。之後,以150℃、3分鐘、空氣氛圍的烘烤條件下利用加熱板加熱而在密接層上形成了下層膜。所獲得之下層膜的厚度約為10nm。 A silicon wafer (8 inches in diameter) was spin-coated with an underlayer film-forming composition for imprinting. Thereafter, an underlayer film was formed on the adhesive layer by heating with a hot plate under baking conditions of 150° C., 3 minutes, and an air atmosphere. The thickness of the obtained underlayer film was about 10 nm.

在下層膜的表面上,利用FUJIFILM Dimatix公司製噴墨打印機DMP-2831,按每個噴嘴1pL的液滴量噴出調整為23℃溫度之壓印用硬化性組成物,在上述下層膜上以液滴成為約100μm間隔的方形陣列的方式進行塗佈。 On the surface of the lower layer film, using the inkjet printer DMP-2831 manufactured by FUJIFILM Dimatix Co., Ltd., a curable composition for imprinting adjusted to a temperature of 23° C. was ejected at a droplet volume of 1 pL per nozzle, and the liquid was sprayed on the lower layer film. The droplets are applied in a square array at intervals of approximately 100 μm.

塗佈後、拍攝3秒後的液滴形狀,並測量了液滴直徑。每1水準使用 了2個試樣,且分別測量了3次。並將總計6次的算術平均值採用為評價值。將結果示於表1~4。 After coating, the droplet shape after 3 seconds was photographed, and the droplet diameter was measured. Use per 1 level Two samples were collected and measured three times respectively. And the arithmetic mean value of 6 times in total was adopted as an evaluation value. The results are shown in Tables 1 to 4.

A:IJ液滴的平均直徑>500μm A: The average diameter of IJ droplets > 500 μm

B:400μm<IJ液滴的平均直徑

Figure 108107340-A0305-02-0065-55
500μm B: Average diameter of 400μm<IJ droplet
Figure 108107340-A0305-02-0065-55
500μm

C:320μm<IJ液滴的平均直徑

Figure 108107340-A0305-02-0065-53
400μm C: Average diameter of 320μm<IJ droplet
Figure 108107340-A0305-02-0065-53
400μm

D:IJ液滴的平均直徑

Figure 108107340-A0305-02-0065-56
320μm D: Average diameter of IJ droplets
Figure 108107340-A0305-02-0065-56
320μm

Figure 108107340-A0305-02-0066-21
Figure 108107340-A0305-02-0066-21

Figure 108107340-A0305-02-0067-22
Figure 108107340-A0305-02-0067-22

Figure 108107340-A0305-02-0068-23
Figure 108107340-A0305-02-0068-23

Figure 108107340-A0305-02-0069-24
Figure 108107340-A0305-02-0069-24

聚合物 polymer

[化學式21]

Figure 108107340-A0305-02-0070-25
[chemical formula 21]
Figure 108107340-A0305-02-0070-25

虛線記載脫離後的脫離成分(以下相同) The dotted line shows the detached components after detachment (same below)

Molecular Weight係指分子量。 Molecular Weight refers to the molecular weight.

[化學式22]

Figure 108107340-A0305-02-0071-26
[chemical formula 22]
Figure 108107340-A0305-02-0071-26

Figure 108107340-A0305-02-0071-27
Figure 108107340-A0305-02-0071-27

Figure 108107340-A0305-02-0072-28
Figure 108107340-A0305-02-0072-28

Figure 108107340-A0305-02-0073-29
Figure 108107340-A0305-02-0073-29

Figure 108107340-A0305-02-0074-30
Figure 108107340-A0305-02-0074-30

[化學式27]

Figure 108107340-A0305-02-0075-31
[chemical formula 27]
Figure 108107340-A0305-02-0075-31

Figure 108107340-A0305-02-0075-32
Figure 108107340-A0305-02-0075-32

[化學式29]

Figure 108107340-A0305-02-0076-33
[chemical formula 29]
Figure 108107340-A0305-02-0076-33

脫離反應促進劑或其前驅物 Detachment reaction accelerator or its precursor

T-1、T-4、T-5、T-6及T-7為光酸產生劑。T-2為熱鹼產生劑。T-3為熱酸產生劑。 T-1, T-4, T-5, T-6 and T-7 are photoacid generators. T-2 is a thermal base generator. T-3 is a thermal acid generator.

Figure 108107340-A0305-02-0076-34
Figure 108107340-A0305-02-0076-34

光聚合起始劑 Photopolymerization initiator

Figure 108107340-A0305-02-0077-35
Figure 108107340-A0305-02-0077-35

Figure 108107340-A0305-02-0078-36
Figure 108107340-A0305-02-0078-36

從上述結果明確可知,本發明的壓印用下層膜形成組成物含有脫離特定脫離成分之聚合物,與壓印用硬化性組成物組合而使用時,顯示優異之潤濕性和良好的密接性(實施例1~21)。另一方面,可知脫離成分未進行脫離或者即使脫離成分進行了脫離但亦無法取特定化學結構者,其潤濕性或密接性差(比較例1~3)。 From the above results, it is clear that the underlayer film-forming composition for imprint of the present invention contains a polymer free from a specific release component, and when used in combination with a curable composition for imprint, it exhibits excellent wettability and good adhesion. (Example 1~21). On the other hand, it can be seen that the wettability or adhesiveness is poor when the detachment component is not detachable or the specific chemical structure cannot be obtained even if the detachment component is detachable (Comparative Examples 1 to 3).

對在各實施例製作之壓印用硬化性組成物的膜,接觸實施了寬度500nm的圖案之石英製鑄模。之後,從鑄模側照射紫外線而將膜硬化。接著,分離鑄模,而獲得轉印有鑄模的圖案之硬化物的圖案。其結果,確認到了在任意硬化物中均能夠形成良好的圖案。 The film of the imprint curable composition produced in each example was brought into contact with a quartz mold patterned with a width of 500 nm. Thereafter, the film was cured by irradiating ultraviolet rays from the mold side. Next, the mold is separated to obtain a pattern of a cured product on which the pattern of the mold is transferred. As a result, it was confirmed that a good pattern can be formed in any cured product.

1:基板 1: Substrate

2:下層膜 2: Lower film

3:壓印用硬化性組成物 3: Hardening composition for imprinting

4:鑄模 4: Molding

Claims (24)

一種壓印用下層膜形成組成物,其包含聚合物及溶劑,該組成物中,使該壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,由下述式(r1-1)或式(r2)表示且分子量為210以上且1000以下的化合物從該聚合物脫離,
Figure 108107340-A0305-02-0080-37
式中,Rr1及Rr2分別獨立地為氫原子、烷基、烯基、芳基、芳烷基或由下述式(RL-1)表示之基團,Rr1及Rr2中的至少一者為烷基、烯基、芳基、芳烷基或由下述式(RL-1)表示之基團,Rr4、Rr5及Rr6為芳基,
Figure 108107340-A0305-02-0080-38
式(RL-1)中,LR1及LR2分別獨立地為單鍵或連結基L,ArR為包含芳香環之連結基L,PR為具有聚合性基團之基團,nr為0~4的整數,mr為1~2的整數,該連結基L為伸烷基、伸烯基、伸炔基、(低聚)伸烷氧基、伸芳基、氧原子、羰基或組合該等而成之基團。
An underlayer film-forming composition for imprinting, which includes a polymer and a solvent, in which, when the underlayer film-forming composition for imprinting is made into a film and baked at 80° C., the following formula (r1 -1) or a compound represented by formula (r2) and having a molecular weight of 210 to 1000 is released from the polymer,
Figure 108107340-A0305-02-0080-37
In the formula, R r1 and R r2 are independently a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group or a group represented by the following formula (RL-1), and at least one of R r1 and R r2 One is an alkyl group, an alkenyl group, an aryl group, an aralkyl group or a group represented by the following formula (RL-1), R r4 , R r5 and R r6 are aryl groups,
Figure 108107340-A0305-02-0080-38
In the formula (RL-1), LR1 and LR2 are independently a single bond or a linking group L, Ar R is a linking group L containing an aromatic ring, PR is a group having a polymerizable group, and nr is 0 An integer of ~4, mr is an integer of 1~2, and the linking group L is an alkylene group, an alkenyl group, an alkynyl group, (oligomeric) alkoxyl group, an aryl group, an oxygen atom, a carbonyl group or a combination of the Wait for the group.
如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中該聚合物包含由下述式(R-1)~式(R-4)中的任一個表示之基團,
Figure 108107340-A0305-02-0081-39
式中,R1~R3分別獨立地為1價的取代基,R4~R12分別獨立地為氫原子或1價的取代基,X表示向聚合物的主鏈鍵結之位置。
The composition for forming an underlayer film for imprint according to claim 1, wherein the polymer contains a group represented by any one of the following formula (R-1) to formula (R-4),
Figure 108107340-A0305-02-0081-39
In the formula, R 1 to R 3 are each independently a monovalent substituent, R 4 to R 12 are each independently a hydrogen atom or a monovalent substituent, and X represents a bonding position to the main chain of the polymer.
如申請專利範圍第2項所述之壓印用下層膜形成組成物,其中式中的C-O鍵從包含由該式(R-1)~式(R-4)中的任一個表示之取代基之聚合物分解,從而由該式(r1-1)或式(r2)表示且分子量210以上且1000以下的化合物從該聚合物脫離。 The composition for forming an underlayer film for imprint according to claim 2, wherein the C-O bond in the formula contains a substituent represented by any one of the formulas (R-1) to (R-4) The polymer decomposes, and the compound represented by the formula (r1-1) or the formula (r2) and having a molecular weight of 210 to 1000 is detached from the polymer. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中該聚合物包含聚合性基團。 The composition for forming an underlayer film for imprint according to claim 1, wherein the polymer contains a polymerizable group. 如申請專利範圍第4項所述之壓印用下層膜形成組成物,其中該聚合性基團包含丙烯醯基或甲基丙烯醯基。 The composition for forming an underlayer film for imprint according to claim 4, wherein the polymerizable group contains an acryl group or a methacryl group. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中該聚合物包含芳香環。 The composition for forming an underlayer film for imprint according to claim 1, wherein the polymer contains an aromatic ring. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中該聚合物包含由下述式(1)~式(6)中的任一個表示之構成單元中的至少1種,
Figure 108107340-A0305-02-0082-40
式中,RP4為氫原子或甲基,RP1表示能夠使由式(r1-1)或式(r2)表示之化合物脫離的基團。
The composition for forming an underlayer film for imprint according to claim 1, wherein the polymer contains at least one structural unit represented by any one of the following formulas (1) to (6),
Figure 108107340-A0305-02-0082-40
In the formula, R P4 is a hydrogen atom or a methyl group, and R P1 represents a group capable of detaching the compound represented by formula (r1-1) or formula (r2).
如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中由該式(r1-1)或式(r2)表示之化合物包含芳香環。 The composition for forming an underlayer film for imprint according to claim 1, wherein the compound represented by the formula (r1-1) or formula (r2) contains an aromatic ring. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中由該式(r1-1)或式(r2)表示之化合物包含聚合性基團。 The composition for forming an underlayer film for imprint according to claim 1, wherein the compound represented by the formula (r1-1) or formula (r2) contains a polymerizable group. 如申請專利範圍第9項所述之壓印用下層膜形成組成物,其中該聚合性基團包含丙烯醯基或甲基丙烯醯基。 The composition for forming an underlayer film for imprint according to claim 9, wherein the polymerizable group contains an acryl group or a methacryl group. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中該式(r1-1)的Rr1及Rr2中的至少1個及式(r2)的Rr4~Rr6中的至少1個包含聚合性基團。 The composition for forming an underlayer film for imprint as described in item 1 of the patent claims, wherein at least one of R r1 and R r2 of the formula (r1-1) and R r4 to R r6 of the formula (r2) at least one of which contains a polymerizable group. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其還包含脫離反應促進劑或其前驅物。 The composition for forming an underlayer film for imprint according to claim 1, further comprising a detachment reaction accelerator or its precursor. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其還包含光聚合起始劑。 The composition for forming an underlayer film for imprint according to claim 1, further comprising a photopolymerization initiator. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中由該式(r1-1)或式(r2)表示之化合物的表面張力為35mN/m~55mN/m。 The composition for forming an underlayer film for imprint according to claim 1, wherein the compound represented by the formula (r1-1) or formula (r2) has a surface tension of 35mN/m~55mN/m. 如申請專利範圍第1項所述之壓印用下層膜形成組成物,其中 以95.0質量%以上的比例包含溶劑。 The composition for forming an underlayer film for imprint according to claim 1, wherein The solvent is contained in a ratio of 95.0% by mass or more. 一種試劑盒,其包含申請專利範圍第1項至第15項中任一項所述之壓印用下層膜形成組成物及包含聚合性化合物之壓印用硬化性組成物。 A kit comprising the imprint underlayer film-forming composition described in any one of the first to fifteenth claims of the patent application and a hardening composition for imprint including a polymerizable compound. 如申請專利範圍第16項所述之試劑盒,其中依據由該式(r1-1)或式(r2)表示之化合物的漢森溶解度參數及該壓印用硬化性組成物的漢森溶解度參數並由下述數學式(H1)計算之△HSP值為5以下,△HSP=(4.0×△D2+△P2+△H2)0.5......(H1)上述△D為壓印用硬化性組成物的漢森溶解度參數向量的分散項成分與由式(r1-1)或式(r2)表示之化合物的漢森溶解度參數向量的分散項成分之差,該△P為壓印用硬化性組成物的漢森溶解度參數向量的極性項成分與由式(r1-1)或式(r2)表示之化合物的漢森溶解度參數向量的極性項成分之差,該△H為壓印用硬化性組成物的漢森溶解度參數向量的氫鍵項成分與由式(r1-1)或式(r2)表示之化合物的漢森溶解度參數向量的氫鍵項成分之差。 The kit according to claim 16 of the patent application, wherein the Hansen solubility parameter of the compound represented by the formula (r1-1) or formula (r2) and the Hansen solubility parameter of the hardening composition for imprinting are used And the △HSP value calculated by the following mathematical formula (H1) is 5 or less, △HSP=(4.0×△D 2 +△P 2 +△H 2 ) 0.5 ...(H1) The above △D is The difference between the dispersion term component of the Hansen solubility parameter vector of the curable composition for imprinting and the dispersion term component of the Hansen solubility parameter vector of the compound represented by formula (r1-1) or formula (r2), the ΔP is The difference between the polar term component of the Hansen solubility parameter vector of the curable composition for imprinting and the polar term component of the Hansen solubility parameter vector of the compound represented by formula (r1-1) or formula (r2), the ΔH is The difference between the hydrogen bond term component of the Hansen solubility parameter vector of the curable composition for imprinting and the hydrogen bond term component of the Hansen solubility parameter vector of the compound represented by formula (r1-1) or formula (r2). 一種下層膜,其由申請專利範圍第1項至第15項中任一項所述之下層膜形成組成物形成。 An underlayer film formed from the underlayer film-forming composition described in any one of the first to fifteenth claims of the patent application. 一種積層體,其由申請專利範圍第16項或第17項所述之試劑盒形成,該積層體具有:下層膜,由該壓印用下層膜形成組成物形成;及壓印層,由該壓印用硬化性組成物形成,且位於該下層膜的表面。 A laminate formed from the kit described in claim 16 or claim 17 of the scope of the patent application, the laminate comprising: an underlayer film formed from the underlayer film forming composition for imprinting; and an embossing layer formed from the The imprint is formed with a curable composition and is located on the surface of the lower film. 一種積層體的製造方法,其使用申請專利範圍第16項或第17 項所述之試劑盒製造積層體,該製造方法包括在由該壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物的製程。 A method for manufacturing a laminate, which uses the 16th or 17th item in the scope of the patent application The kit for producing a laminate according to the above item includes a process of applying a hardening composition for imprinting to the surface of the underlayer film formed from the underlayer film-forming composition for imprinting. 如申請專利範圍第20項所述之積層體的製造方法,其中該壓印用硬化性組成物藉由噴墨法適用於該下層膜的表面。 The method for producing a laminate as described in claim 20, wherein the curable composition for imprinting is applied to the surface of the underlayer film by an inkjet method. 如申請專利範圍第20項或第21項所述之積層體的製造方法,該製造方法還包括在基板上將該壓印用下層膜形成組成物適用成層狀之製程,並包括在80℃~250℃下加熱適用成該層狀之壓印用下層膜形成組成物之製程。 The manufacturing method of the laminated body described in the 20th or 21st claim of the patent application, the manufacturing method further includes the process of applying the underlayer film-forming composition for imprinting on the substrate into a layered process, and includes Heating at ~250°C is suitable for the process of forming the layered underlayer film-forming composition for imprinting. 一種硬化物圖案的製造方法,其使用申請專利範圍第16項或第17項所述之試劑盒製造硬化物圖案,該方法具有:下層膜形成製程,在基板上適用壓印用下層膜形成組成物而形成下層膜;適用製程,在該下層膜的表面適用壓印用硬化性組成物;鑄模接觸製程,使該壓印用硬化性組成物與具有用於轉印圖案形狀之圖案之鑄模接觸;光照射製程,向該壓印用硬化性組成物照射光而形成硬化物;及脫模製程,分離該硬化物與該鑄模。 A method for manufacturing a pattern of a hardened object, which uses the kit described in item 16 or item 17 of the scope of the patent application to manufacture a pattern of a hardened object, the method comprising: an underlayer film forming process, and a composition for forming an underlayer film for imprinting on a substrate material to form an underlayer film; application process, applying a curable composition for imprinting on the surface of the underlayer film; mold contact process, making the curable composition for imprint contact with a mold having a pattern for transferring the shape of the pattern a light irradiation process of irradiating light to the curable composition for imprinting to form a cured product; and a demoulding process of separating the cured product from the mold. 一種電路基板的製造方法,其包括藉由申請專利範圍第23項所述之製造方法獲得硬化物圖案之製程。 A method of manufacturing a circuit board, which includes the process of obtaining a cured product pattern through the manufacturing method described in claim 23 of the patent application.
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