TWI792992B - Membrane switch circuit - Google Patents
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- TWI792992B TWI792992B TW111116017A TW111116017A TWI792992B TW I792992 B TWI792992 B TW I792992B TW 111116017 A TW111116017 A TW 111116017A TW 111116017 A TW111116017 A TW 111116017A TW I792992 B TWI792992 B TW I792992B
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本發明係關於一種薄膜開關電路,並且特別是關於具有能延緩外部水氣進入的通氣道之薄膜開關電路。The present invention relates to a membrane switch circuit, and in particular to a membrane switch circuit with an air channel capable of delaying the entry of external moisture.
鍵盤已為市面上常見的輸入周邊裝置。薄膜開關電路為鍵盤的必要元件之一。The keyboard has become a common input peripheral device on the market. The membrane switch circuit is one of the necessary components of the keyboard.
一般的薄膜開關電路皆包含有上電路層以及下電路層。上電路層包含有複數個上接點,下電路層包含有相對應之複數個下接點。鍵盤包含複數個按鍵結構係以可上下按動的方式設於每一組相對應的上接點、下接點之上,用來按下上電路層之上接點以接觸相對應之下接點,進而產生相對應的按鍵訊號。每一組相對應的上接點、下接點之間皆具有一個包含空氣的預置空間。當按鍵結構被按下時,上接點會下降並接觸對應的下接點。並且,當按鍵結構未被按下或按下後被放開時,上接點會維持或回復至原高度。A general membrane switch circuit includes an upper circuit layer and a lower circuit layer. The upper circuit layer includes a plurality of upper contacts, and the lower circuit layer includes a plurality of corresponding lower contacts. The keyboard includes a plurality of button structures that are arranged on each set of corresponding upper contacts and lower contacts in a manner that can be pressed up and down, and are used to press the upper contacts of the upper circuit layer to contact the corresponding lower contacts. Point, and then generate the corresponding key signal. There is a pre-set space containing air between each set of corresponding upper contacts and lower contacts. When the button structure is pressed, the upper contact will drop and contact the corresponding lower contact. Moreover, when the button structure is not pressed or is released after being pressed, the upper contact will maintain or return to the original height.
一般而言,先前技術之薄膜開關電路會利用通氣道將複數個預置空間設計成與外界大氣相通。藉由複數個預置空間與外界大氣相通的設計,當外界的氣壓或溫度有所變化時,複數個預置空間內的氣壓與外界的氣壓相同,不會使上接點不易被按下,或按下後不易回復原高度,而導致按鍵觸感不佳,或按鍵訊號錯誤的情形發生。Generally speaking, the membrane switch circuit of the prior art utilizes air passages to design a plurality of preset spaces to communicate with the outside atmosphere. With the design of multiple preset spaces connected to the outside atmosphere, when the outside air pressure or temperature changes, the air pressure in the multiple preset spaces will be the same as the outside air pressure, which will not make the upper contact difficult to be pressed. Or it is not easy to return to the original height after being pressed, resulting in poor tactile feeling of the key, or wrong signal of the key.
然而,先前技術之具有通氣道的薄膜開關電路卻無法有效阻絕水氣等異物進入其內部。However, the prior art membrane switch circuit with an air passage cannot effectively prevent foreign matter such as water vapor from entering its interior.
因此,本發明所欲解決之一技術問題在於提供一種用於鍵盤且具有能延緩外部水氣進入的通氣道之薄膜開關電路。Therefore, one technical problem to be solved by the present invention is to provide a membrane switch circuit for a keyboard with an air passage that can delay the entry of external moisture.
根據本發明之一較佳具體實施例之薄膜開關電路包含上絕緣基材、上電路層、隔離層、上貼合層、下絕緣基材、下電路層以及下貼合層。上絕緣基材具有第一上表面以及第一下表面。上電路層係形成於上絕緣基材的第一下表面上,並且包含複數個上接點。隔離層具有第二上表面、第二下表面以及複數個第一通孔。每一個第一通孔對應一個上接點。上貼合層具有複數個第二通孔、上通氣道以及第一流體二極體(fluidic diode)結構。每一個第二通孔對應一個第一通孔。上通氣道連通複數個第二通孔。上貼合層係貼合於上絕緣基材的第一下表面與隔離層的第二上表面之間,致使每一個上接點係曝露於其對應的第一通孔與其對應的第二通孔內。第一流體二極體結構具有第一通氣口以及第二通氣口。第一流體二極體結構的第一通氣口係形成於上貼合層之第一外緣側面上,並且第一流體二極體結構的第二通氣口係連通上通氣道。第一流向係定義從第一通氣口流向第二通氣口。第二流向係定義從第二通氣口流向第一通氣口。特別地,第一流向之第一流體阻力係大於第二流向之第二流體阻力。下絕緣基材具有第三上表面以及第三下表面。下電路層係形成於下絕緣基材的第三上表面上,並且包含複數個下接點。每一個下接點對應一個第一通孔。下貼合層具有複數個第三通孔。每一個第三通孔對應一個第一通孔。下貼合層係貼合於隔離層的第二下表面與下絕緣基材的第三上表面之間,致使每一個下接點係曝露於其對應的第一通孔與其對應的第三通孔內。The membrane switch circuit according to a preferred embodiment of the present invention comprises an upper insulating substrate, an upper circuit layer, an isolation layer, an upper bonding layer, a lower insulating substrate, a lower circuit layer and a lower bonding layer. The upper insulating substrate has a first upper surface and a first lower surface. The upper circuit layer is formed on the first lower surface of the upper insulating substrate and includes a plurality of upper contacts. The isolation layer has a second upper surface, a second lower surface and a plurality of first through holes. Each first through hole corresponds to an upper contact. The upper bonding layer has a plurality of second through holes, an upper air channel and a first fluidic diode structure. Each second through hole corresponds to a first through hole. The upper airway communicates with a plurality of second through holes. The upper bonding layer is bonded between the first lower surface of the upper insulating substrate and the second upper surface of the isolation layer, so that each upper contact is exposed to its corresponding first through hole and its corresponding second through hole. inside the hole. The first fluid diode structure has a first vent and a second vent. The first air vent of the first fluid diode structure is formed on the first outer edge side of the upper bonding layer, and the second air vent of the first fluid diode structure communicates with the upper air channel. The first flow direction defines flow from the first vent to the second vent. The second flow direction defines flow from the second vent to the first vent. In particular, the first fluid resistance of the first flow direction is greater than the second fluid resistance of the second flow direction. The lower insulating substrate has a third upper surface and a third lower surface. The lower circuit layer is formed on the third upper surface of the lower insulating substrate and includes a plurality of lower contacts. Each lower contact corresponds to a first through hole. The lower bonding layer has a plurality of third through holes. Each third through hole corresponds to one first through hole. The lower bonding layer is bonded between the second lower surface of the isolation layer and the third upper surface of the lower insulating substrate, so that each lower contact is exposed to its corresponding first through hole and its corresponding third through hole. inside the hole.
於根據本發明之較佳具體實施例之薄膜開關電路之一變形中,下貼合層還具有下通氣道以及第二流體二極體結構。下通氣道連通複數個第三通孔。第二流體二極體結構具有第三通氣口以及第四通氣口。第二流體二極體結構的第三通氣口係形成於下貼合層之第二外緣側面上,並且第二流體二極體結構的第四通氣口係連通下通氣道。第三流向係定義從第三通氣口流向第四通氣口。第四流向係定義從第四通氣口流向第三通氣口。特別地,第三流向之第三流體阻力係大於第四流向之第四流體阻力。In a variation of the membrane switch circuit according to a preferred embodiment of the present invention, the lower bonding layer also has a lower air channel and a second fluid diode structure. The lower air passage communicates with a plurality of third through holes. The second fluid diode structure has a third vent and a fourth vent. The third vent of the second fluid diode structure is formed on the second outer edge side of the lower lamination layer, and the fourth vent of the second fluid diode structure communicates with the lower air channel. The third flow direction defines flow from the third vent to the fourth vent. The fourth flow direction defines flow from the fourth vent to the third vent. In particular, the third fluid resistance of the third flow direction is greater than the fourth fluid resistance of the fourth flow direction.
於根據本發明之較佳具體實施例之薄膜開關電路之另一變形中,上貼合層還具有第三流體二極體結構。第三流體二極體結構具有第五通氣口以及第六通氣口。第三流體二極體結構的第五通氣口係連通上通氣道。第三流體二極體結構的第六通氣口係連通複數個第二通孔中之指定的第二通孔。第五流向係定義從第五通氣口流向第六通氣口。第六流向係定義從第六通氣口向該第五通氣口。特別地,第五流向之第五流體阻力係大於第六流向之第六流體阻力。In another variant of the membrane switch circuit according to the preferred embodiment of the present invention, the upper bonding layer also has a third fluid diode structure. The third fluid diode structure has a fifth vent and a sixth vent. The fifth vent of the third fluid diode structure is connected to the upper vent. The sixth vent of the third fluid diode structure communicates with a designated second through hole in the plurality of second through holes. The fifth flow direction defines flow from the fifth vent to the sixth vent. A sixth flow direction is defined from the sixth vent to the fifth vent. In particular, the fifth fluid resistance of the fifth flow direction is greater than the sixth fluid resistance of the sixth flow direction.
於根據本發明之較佳具體實施例之薄膜開關電路之另一變形中,上貼合層還具有第四流體二極體結構。第四流體二極體結構具有第七通氣口以及第八通氣口。上絕緣基材還具有第一破孔。隔離層還具有第二破孔。上貼合層還具有第三破孔。下絕緣基材還具有第四破孔。下貼合層還具有第五破孔。上絕緣基材的第一破孔係與隔離層的第二破孔、上貼合層的第三破孔、下絕緣基材的第四破孔、下貼合層的第五破孔對齊。第四流體二極體結構的第七通氣口係連通上貼合層的第三破孔。第四流體二極體結構的第八通氣口係連通上通氣道。第七流向係定義從第七通氣口流向第八通氣口。第八流向係定義從第八通氣口流向第七通氣口。特別地,第七流向之第七流體阻力係大於第八流向之一第八流體阻力。In another modification of the membrane switch circuit according to the preferred embodiment of the present invention, the upper bonding layer also has a fourth fluid diode structure. The fourth fluid diode structure has a seventh vent and an eighth vent. The upper insulating substrate also has first perforations. The isolation layer also has a second perforation. The upper lamination layer also has a third perforation. The lower insulating substrate also has a fourth hole. The lower lamination layer also has a fifth perforation. The first perforation of the upper insulating substrate is aligned with the second perforation of the isolation layer, the third perforation of the upper bonding layer, the fourth perforation of the lower insulating substrate, and the fifth perforation of the lower bonding layer. The seventh vent of the fourth fluid diode structure communicates with the third hole of the upper bonding layer. The eighth vent of the fourth fluid diode structure is connected to the upper vent. The seventh flow direction defines flow from the seventh vent to the eighth vent. The eighth flow direction defines flow from the eighth vent to the seventh vent. In particular, the seventh fluid resistance of the seventh flow direction is greater than the eighth fluid resistance of the eighth flow direction.
與先前技術不同,根據本發明之薄膜開關電路具有通氣道以及連通通氣道的流體二極體結構,可以有效地延緩外部水氣進入其內部。Different from the prior art, the membrane switch circuit according to the present invention has an air channel and a fluid diode structure connected to the air channel, which can effectively delay the entry of external moisture into its interior.
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。The advantages and spirit of the present invention can be further understood through the following detailed description of the invention and the accompanying drawings.
請參閱圖1至圖5,該等圖式示意地描繪根據本發明之較佳具體實施例之薄膜開關電路1。圖1以元件、構件局部的展開圖示意地繪示根據本發明之較佳具體實例之薄膜開關電路1。圖2係圖1中薄膜開關電路1組裝後並沿A-A線的局部剖面視圖。圖3係根據本發明之較佳具體實施例之薄膜開關電路1移除上絕緣基材10後的局部外觀視圖。圖4係根據本發明之較佳具體實施例之薄膜開關電路1之一變形移除下絕緣基材14後且將下絕緣基材14的第三下表面142朝上的局部外觀視圖。圖5係根據本發明之較佳具體實施例之薄膜開關電路1之另一變形移除上絕緣基材10後的局部外觀視圖。圖6係根據本發明之較佳具體實施例之薄膜開關電路1之另一變形移除上絕緣基材10後的局部外觀視圖。圖7係根據本發明之較佳具體實施例之薄膜開關電路1之另一變形移除下絕緣基材14後且將下絕緣基材14的第三下表面142朝上的局部外觀視圖。圖8係根據本發明之較佳具體實施例之薄膜開關電路1之另一變形移除下絕緣基材14後且將下絕緣基材14的第三下表面142朝上的局部外觀視圖。Please refer to FIG. 1 to FIG. 5 , which schematically depict a
如圖1、圖2及圖3所示,根據本發明之較佳具體實施例之薄膜開關電路1包含上絕緣基材10、上電路層11、隔離層12、上貼合層13、下絕緣基材14、下電路層15以及下貼合層16。As shown in Fig. 1, Fig. 2 and Fig. 3, the
上絕緣基材10具有第一上表面100以及第一下表面102。上電路層11係形成於上絕緣基材10的第一下表面102上,並且包含複數個上接點112。The upper insulating
隔離層12具有第二上表面120、第二下表面122以及複數個第一通孔124。每一個第一通孔124對應一個上接點112。上貼合層13具有複數個第二通孔130、上通氣道131以及第一流體二極體結構132。每一個第二通孔130對應一個第一通孔124。上通氣道131連通複數個第二通孔130。上貼合層13係貼合於上絕緣基材10的第一下表面102與隔離層12的第二上表面120之間,致使每一個上接點112係曝露於其對應的第一通孔124與其對應的第二通孔130內。The
第一流體二極體結構132具有第一通氣口1320以及第二通氣口1322。第一流體二極體結構132的第一通氣口1320係形成於上貼合層13之第一外緣側面133上,並且第一流體二極體結構132的第二通氣口1322係連通上通氣道131。第一流向係定義從第一通氣口1320流向第二通氣口1322。第二流向係定義從第二通氣口1322流向第一通氣口1320。特別地,第一流向之第一流體阻力係大於第二流向之第二流體阻力。藉此,根據本發明之薄膜開關電路1可以有效地延緩外部水氣進入其內部。The first
下絕緣基材14具有第三上表面140以及第三下表面142。下電路層15係形成於下絕緣基材14的第三上表面140上,並且包含複數個下接點152。每一個下接點152對應一個第一通孔124。下貼合層16具有複數個第三通孔160。每一個第三通孔160對應一個第一通孔124。下貼合層16係貼合於隔離層12的第二下表面122與下絕緣基材14的第三上表面140之間,致使每一個下接點152係曝露於其對應的第一通孔124與其對應的第三通孔160內。The lower insulating
於一具體實施例中,上絕緣基材10、下絕緣基材14可以由聚碳酸酯(polycarbonate, PC)、聚氯乙烯(polyvinyl Chloride,PVC)、聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)等高分子材料所形成。
In a specific embodiment, the upper insulating
如圖4所示,於根據本發明之較佳具體實施例之薄膜開關電路1之一變形中,下貼合層16還具有下通氣道161以及第二流體二極體結構162。下通氣道161連通複數個第三通孔160。第二流體二極體結構162具有第三通氣口1620以及第四通氣口1622。第二流體二極體結構162的第三通氣口1620係形成於下貼合層16之第二外緣側面163上,並且第二流體二極體結構162的第四通氣口1622係連通下通氣道161。第三流向係定義從第三通氣口1620流向第四通氣口1622。第四流向係定義從第四通氣口1622流向第三通氣口1620。特別地,第三流向之第三流體阻力係大於第四流向之第四流體阻力。藉此,根據本發明之薄膜開關電路1可以有效地延緩外部水氣進入其內部。
As shown in FIG. 4 , in a modification of the
如圖5所示,於根據本發明之較佳具體實施例之薄膜開關電路1之另一變形中,上貼合層13還具有第三流體二極體結構134。第三流體二極體結構134具有第五通氣口1340以及第六通氣口1342。第三流體二極體結構134的第五通氣口1340係連通上通氣道131。第三流體二極體結構134的第六通氣口1342係連通複數個第二通孔130中之指定的第二通孔130。第五流向係定義從第五通氣口1340流向第六通氣口1342。第六流向係定義從第六通氣口1342向第五通氣口1340。特別地,第五流向之第五流體阻力係大於第六流向之第六流體阻力。藉此,根據本發明之薄膜開關電路1可以有
效地延緩外部水氣進入其內部。
As shown in FIG. 5 , in another variation of the
根據本發明之薄膜開關電路1還具有配合鍵盤組裝所需形成的複數個破孔。水氣等異物也可能從複數個破孔侵入根據本發明之薄膜開關電路1。如圖6所示,於根據本發明之較佳具體實施例之薄膜開關電路1之另一變形中,上貼合層13還具有第四流體二極體結構135。第四流體二極體結構135具有第七通氣口1350以及第八通氣口1352。上絕緣基材10還具有第一破孔104。隔離層12還具有第二破孔126。上貼合層13還具有第三破孔136。下絕緣基材14還具有第四破孔144。下貼合層16還具有第五破孔164。上絕緣基材10的第一破孔104係與隔離層12的第二破孔126、上貼合層13的第三破孔136、下絕緣基材14的第四破孔144、下貼合層16的第五破孔164對齊。第四流體二極體結構135的第七通氣口1350係連通上貼合層13的第三破孔136。第四流體二極體結構135的第八通氣口1352係連通上通氣道131。第七流向係定義從第七通氣口1350流向第八通氣口1352。第八流向係定義從第八通氣口1352流向第七通氣口1350。特別地,第七流向之第七流體阻力係大於第八流向之第八流體阻力。藉此,根據本發明之薄膜開關電路1可以有效地延緩外部水氣進入其內部。
The
如圖7所示,於根據本發明之較佳具體實施例之薄膜開關電路1之另一變形中,下貼合層16還具有第五流體二極體結構165。第五流體二極體結構165具有第九通氣口1650以及第十通氣口1652。第五流體二極體結構165的第九
通氣口1650係連通下通氣道161。第五流體二極體結構165的第十通氣口1652係連通複數個第三通孔160中之指定的第三通孔160。第九流向係定義從第九通氣口1650流向第十通氣口1652。第十流向係定義從第十通氣口1652向第九通氣口1650。特別地,第九流向之第九流體阻力係大於第十流向之第十流體阻力。藉此,根據本發明之薄膜開關電路1可以有效地延緩外部水氣進入其內部。
As shown in FIG. 7 , in another variation of the
如圖8所示,於根據本發明之較佳具體實施例之薄膜開關電路1之另一變形中,同樣地,上絕緣基材10還具有第一破孔104。隔離層12還具有第二破孔126。上貼合層13還具有第三破孔136。下絕緣基材14還具有第四破孔144。下貼合層16還具有第五破孔164。上絕緣基材10的第一破孔104係與隔離層12的第二破孔126、上貼合層13的第三破孔136、下絕緣基材14的第四破孔144、下貼合層16的第五破孔164對齊。下貼合層16還具有第六流體二極體結構166。第六流體二極體結構166具有第十一通氣口1660以及第十二通氣口1662。第六流體二極體結構166的第十一通氣口1660係連通下貼合層16的第五破孔164。第六流體二極體結構166的第十二通氣口1662係連通下通氣道161。第十一流向係定義從第十一通氣口1660流向第十二通氣口1662。第十二流向係定義從第十二通氣口1662流向第十一通氣口1660。特別地,第十一流向之第十一流體阻力係大於第十二流向之第十二流體阻力。藉此,根據本發明之薄膜開關電路1可以有效地延緩外部水氣進入其內部。As shown in FIG. 8 , in another variation of the
於一具體實施例中,上貼合層13可以由紫外線硬化樹脂、水膠、矽膠(silica gel)等高分子材料所形成。上貼合層13可以先行形成於上絕緣基材10的第一下表面102或隔離層12的第二上表面120上。下貼合層16可以由紫外線硬化樹脂、水膠、矽膠等高分子材料所形成。下貼合層16可以先行形成於下絕緣基材14的第三上表面140或隔離層12的第二下表面122上。上通氣道131、下通氣道161、第一流體二極體結構132、第二流體二極體結構162、第三流體二極體結構134、第四流體二極體結構135、第五流體二極體結構165、第六流體二極體結構166可以藉由網印製程形成於上貼合層13、下貼合層16上。In a specific embodiment, the
根據本發明之薄膜開關電路1包含上述第一流體二極體結構132、第二流體二極體結構162、第三流體二極體結構134、第四流體二極體結構135、第五流體二極體結構165、第六流體二極體結構166中至少一個。
藉由以上對本發明之詳述,可以清楚了解根據本發明之薄膜開關電路具有通氣道以及連通通氣道的流體二極體結構,可以有效地延緩外部水氣進入其內部。From the above detailed description of the present invention, it can be clearly understood that the membrane switch circuit according to the present invention has an air channel and a fluid diode structure connected to the air channel, which can effectively delay the entry of external moisture into its interior.
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之面向加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的面向內。因此,本發明所申請之專利範圍的面向應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。Through the above detailed description of the preferred embodiments, it is hoped that the characteristics and spirit of the present invention can be described more clearly, and the aspect of the present invention is not limited by the preferred embodiments disclosed above. On the contrary, the purpose is to cover various changes and equivalent arrangements within the scope of the patent application for the present invention. Therefore, the aspect of the scope of the patent application for the present invention should be interpreted in the broadest way based on the above description, so as to cover all possible changes and equivalent arrangements.
1:薄膜開關電路 10:上絕緣基材 100:第一上表面 102:第一下表面 104:第一破孔 11:上電路層 112:上接點 12:隔離層 120:第二上表面 122:第二下表面 124:第一通孔 126:第二破孔 13:上貼合層 130:第二通孔 131:上通氣道 132:第一流體二極體結構 1320:第一通氣口 1322:第二通氣口 133:第一外緣側面 134:第三流體二極體結構 1340:第五通氣口 1342:第六通氣口 135:第四流體二極體結構 1350:第七通氣口 1352:第八通氣口 136:第三破孔 14:下絕緣基材 140:第三上表面 142:第三下表面 144:第四破孔 15:下電路層 152:下接點 16:下貼合層 160:第三通孔 161:下通氣道 162:第二流體二極體結構 1620:第三通氣口 1622:第四通氣口 163:第二外緣側面 164:第五破孔 165:第五流體二極體結構 1650:第九通氣口 1652:第十通氣口 166:第六流體二極體結構 1660:第十一通氣口 1662:第十二通氣口 1: Membrane switch circuit 10: Upper insulating substrate 100: first upper surface 102: First lower surface 104: The first hole 11: Upper circuit layer 112: upper contact 12: Isolation layer 120: second upper surface 122: second lower surface 124: the first through hole 126: The second hole 13: Upper bonding layer 130: the second through hole 131: upper airway 132: The first fluid diode structure 1320: First vent 1322:Second vent 133: First outer edge side 134: The third fluid diode structure 1340: Fifth Vent 1342: The sixth vent 135: The fourth fluid diode structure 1350: The seventh vent 1352: Eighth vent 136: The third hole 14: Lower insulating substrate 140: The third upper surface 142: The third lower surface 144: The fourth hole 15: Lower circuit layer 152: lower contact 16: Lower bonding layer 160: The third through hole 161: lower airway 162: Second fluid diode structure 1620: Third Vent 1622: Fourth Vent 163: Second outer edge side 164: fifth hole 165: The fifth fluid diode structure 1650: Ninth Vent 1652: Tenth Vent 166: The sixth fluid diode structure 1660: Eleventh Vent 1662: Twelfth Vent
圖1係根據本發明之較佳具體實施例的薄膜開關電路的元件、構件局部之展開圖。 圖2係圖1中薄膜開關電路組裝後並沿A-A線的局部剖面視圖。。 圖3係根據本發明之較佳具體實施例之薄膜開關電路移除上絕緣基材後的局部外觀視圖。 圖4係根據本發明之較佳具體實施例之薄膜開關電路之一變形移除下絕緣基材後且將下絕緣基材的第三下表面朝上的局部外觀視圖。 圖5係根據本發明之較佳具體實施例之薄膜開關電路之另一一變形移除上絕緣基材後的局部外觀視圖。 圖6係根據本發明之較佳具體實施例之薄膜開關電路之另一變形移除上絕緣基材後的局部外觀視圖。 圖7係根據本發明之較佳具體實施例之薄膜開關電路之另一變形移除下絕緣基材後且將下絕緣基材的第三下表面朝上的局部外觀視圖。 圖8係根據本發明之較佳具體實施例之薄膜開關電路之另一變形移除下絕緣基材後且將下絕緣基材的第三下表面朝上的局部外觀視圖。 Fig. 1 is a partial expanded view of elements and components of a membrane switch circuit according to a preferred embodiment of the present invention. Fig. 2 is a partial cross-sectional view along line A-A after the membrane switch circuit in Fig. 1 is assembled. . Fig. 3 is a partial appearance view of the membrane switch circuit according to a preferred embodiment of the present invention after removing the upper insulating substrate. 4 is a partial appearance view of a modification of the membrane switch circuit according to a preferred embodiment of the present invention after removing the lower insulating substrate and turning the third lower surface of the lower insulating substrate upward. Fig. 5 is a partial appearance view of another modification of the membrane switch circuit according to a preferred embodiment of the present invention after removing the upper insulating substrate. Fig. 6 is a partial appearance view of another modification of the membrane switch circuit according to a preferred embodiment of the present invention after removing the upper insulating substrate. 7 is a partial appearance view of another modification of the membrane switch circuit according to a preferred embodiment of the present invention after removing the lower insulating substrate and turning the third lower surface of the lower insulating substrate upward. 8 is a partial appearance view of another modification of the membrane switch circuit according to a preferred embodiment of the present invention after removing the lower insulating substrate and turning the third lower surface of the lower insulating substrate upward.
1:薄膜開關電路 1: Membrane switch circuit
12:隔離層 12: Isolation layer
120:第二上表面 120: second upper surface
122:第二下表面 122: second lower surface
124:第一通孔 124: the first through hole
13:上貼合層 13: Upper bonding layer
130:第二通孔 130: the second through hole
131:上通氣道 131: upper airway
132:第一流體二極體結構 132: The first fluid diode structure
1320:第一通氣口 1320: First vent
1322:第二通氣口 1322:Second vent
133:第一外緣側面 133: First outer edge side
14:下絕緣基材 14: Lower insulating substrate
140:第三上表面 140: The third upper surface
142:第三下表面 142: The third lower surface
15:下電路層 15: Lower circuit layer
152:下接點 152: lower contact
16:下貼合層 16: Lower bonding layer
160:第三通孔 160: The third through hole
Claims (7)
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TW111116017A TWI792992B (en) | 2022-04-27 | 2022-04-27 | Membrane switch circuit |
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TW111116017A TWI792992B (en) | 2022-04-27 | 2022-04-27 | Membrane switch circuit |
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TWI792992B true TWI792992B (en) | 2023-02-11 |
TW202343498A TW202343498A (en) | 2023-11-01 |
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