TWI787412B - Black matrix substrate and display device with black matrix substrate - Google Patents

Black matrix substrate and display device with black matrix substrate Download PDF

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TWI787412B
TWI787412B TW107144279A TW107144279A TWI787412B TW I787412 B TWI787412 B TW I787412B TW 107144279 A TW107144279 A TW 107144279A TW 107144279 A TW107144279 A TW 107144279A TW I787412 B TWI787412 B TW I787412B
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black matrix
layer
semi
light
transmissive film
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TW107144279A
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TW202022413A (en
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山內淳
福吉健藏
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日商凸版印刷股份有限公司
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Abstract

本發明的黑色矩陣基板係具備:透明基板;半透射膜,形成於前述透明基板上;第1黑色矩陣層,在前述半透射膜的厚度方向上,以與前述半透射膜接觸的方式形成於前述半透射膜上,且具備複數個第1開口部;透明樹脂層,以覆蓋前述第1黑色矩陣層之方式形成於前述半透射膜上;及第2黑色矩陣層,形成於前述透明樹脂層上,且具備複數個第2開口部;在從與形成有前述半透射膜之前述透明基板的面相反側的面觀看的平面視圖中,前述半透射膜係與複數個前述第1開口部和前述第1黑色矩陣層重疊,在平面視圖中,複數個前述第2開口部的位置係與複數個前述第1開口部的位置對應。 The black matrix substrate of the present invention is provided with: a transparent substrate; a semi-transmissive film formed on the aforementioned transparent substrate; A plurality of first openings are provided on the semi-transmissive film; a transparent resin layer is formed on the semi-transmissive film to cover the first black matrix layer; and a second black matrix layer is formed on the transparent resin layer and having a plurality of second openings; in a plan view viewed from a surface opposite to the surface of the transparent substrate on which the semi-transmissive film is formed, the semi-transmissive film is combined with the plurality of first openings and The first black matrix layers overlap, and the positions of the plurality of second openings correspond to the positions of the plurality of first openings in a plan view.

Description

黑色矩陣基板及具備黑色矩陣基板的顯示裝置 Black matrix substrate and display device with black matrix substrate

本發明係有關於使用於液晶顯示裝置、微型LED(LED顯示器)及有機EL顯示裝置等的黑色矩陣基板,再者係關於具備黑色矩陣基板的顯示裝置。 The present invention relates to a black matrix substrate used in a liquid crystal display device, a micro LED (LED display), an organic EL display device, and the like, and further relates to a display device provided with a black matrix substrate.

液晶顯示裝置係使用以LED(Light Emitting Diode)作為光源的背光(back light),且使用液晶作為切換光的透射、非透射之顯示功能層的顯示裝置。 A liquid crystal display device is a display device that uses LED (Light Emitting Diode) as a backlight as a light source, and uses liquid crystal as a display function layer that switches between light transmission and non-transmission.

近年來,將被稱為Mini LED(次毫米發光二極體)的直下型背光使用於液晶顯示裝置的技術備受矚目,該Mini LED具有將約5μm至100μm尺寸的LED晶片呈矩陣狀排列複數個而成的構成。在Mini LED中,通常,係使用紅色發光、綠色發光、藍色發光的3種LED晶片。 In recent years, attention has been drawn to the technology of using direct-lit backlights called Mini LEDs (submillimeter light-emitting diodes) in liquid crystal display devices. The Mini LEDs have a plurality of LED chips with a size of about 5 μm to 100 μm arranged in a matrix. made up of. In Mini LED, generally, three types of LED chips that emit red light, green light, and blue light are used.

又,因應顯示畫面中之顯示部位的位置,併用局部地調整3種LED晶片的發光輝度、或者局部地使發光停止之區域調光(local dimming)之技術備受矚目。 In addition, local dimming technology that locally adjusts the luminance of the three types of LED chips or partially stops light emission in response to the position of the display part on the display screen has attracted attention.

在使用此種區域調光的液晶顯示裝置中,由於可將顯示畫面的發光局部地關閉(off),所以可大幅改善顯示的對比(contrast)。在以往的液晶顯示裝置中,由於將背光常時點亮,所以在液晶的黑顯示時,會發生些微的漏光,難以獲得與有機EL相同的對比。 In the liquid crystal display device using such local dimming, since the light emission of the display screen can be partially turned off (off), the contrast of the display can be greatly improved. In conventional liquid crystal display devices, since the backlight is always turned on, slight light leakage occurs when the liquid crystal is displayed in black, and it is difficult to obtain the same contrast as that of organic EL.

微型LED(micro LED)係具有大約2μm至50μm尺寸的LED晶片配列成矩陣狀的構造,藉由個別驅動複數個LED晶片的每一者來進行顯示之顯示裝置。此種微型LED可在不使用液晶下進行顯示。 A micro LED (micro LED) is a display device in which LED chips with a size of about 2 μm to 50 μm are arranged in a matrix structure, and each of a plurality of LED chips is individually driven to perform display. Such micro-LEDs can be displayed without the use of liquid crystals.

微型LED係可大致區分成:與上述Mini LED同樣地,使用紅色發光、綠色發光、藍色發光的3種LED晶片的方式;與僅使用發出藍色至近紫外線的波長區域的光之發光LED晶片等的單色發光LED晶片之方式。在微型LED中,各LED晶片係發揮顯示功能層的作用。 The micro LED system can be roughly divided into: the same as the above-mentioned Mini LED, using three types of LED chips that emit red light, green light, and blue light; and light-emitting LED chips that use only light that emits light in the wavelength range from blue to near ultraviolet Such as monochromatic light-emitting LED chips. In micro-LEDs, each LED chip plays the role of a display function layer.

在使用單色發光LED晶片的方式中,藉由在複數個單色發光LED晶片的每一者,積層波長轉換元件(例如量子點等)來實現彩色顯示,該波長轉換元件係進行波長轉換以將發光波長轉換成紅色、綠色及藍色中的任一者。 In the method using a single-color light-emitting LED chip, color display is realized by laminating a wavelength conversion element (such as quantum dots, etc.) that performs wavelength conversion on each of a plurality of single-color light-emitting LED chips. Convert the emission wavelength to any one of red, green and blue.

有機EL係有機電致發光(Organic Electroluminescence)的簡稱。有機EL顯示裝置,係將由注入有機化合物中之電子與電洞的再結合所產生的發光使用於顯示作為顯示功能層之顯示裝置。有機EL顯示裝置係大致區分成:使用發出紅色、綠色及藍色之3種發光層的方式;與在發出白色的白色發光層組合彩色濾光片之方式。 Organic EL is the abbreviation of Organic Electroluminescence. An organic EL display device is a display device that uses the luminescence generated by the recombination of electrons and holes injected into an organic compound to display as a display function layer. Organic EL display devices are broadly classified into: the method using three light-emitting layers that emit red, green, and blue; and the method that combines a color filter with a white light-emitting layer that emits white.

在液晶顯示裝置、微型LED及有機EL顯示裝置中,皆未充分地獲得從顯示功能層的射出光朝向畫素開口部之光的直線性。因此,會產生對於鄰接的畫素之雜散光(stray light)(斜射出光),顯示對比會降低。 In a liquid crystal display device, a micro LED display device, and an organic EL display device, the linearity of the light emitted from the display function layer toward the pixel opening is not sufficiently obtained. Therefore, stray light (obliquely emitted light) to adjacent pixels is generated, and display contrast is lowered.

尤其,隨著畫素尺寸持續微細化,因雜散光所致之顯示對比降低會成為問題。又,在明亮的環境下使用顯示裝置時,因從外部射入顯示裝置的入射光所致之顯示對比降低也會成為問題。 In particular, as the pixel size continues to be miniaturized, the decrease in display contrast due to stray light will become a problem. In addition, when the display device is used in a bright environment, a decrease in display contrast due to incident light entering the display device from the outside becomes a problem.

在有機EL顯示裝置或微型LED中,為了避免由外部射入顯示裝置的入射光所致之對比降低,係使用圓偏光板。在有機EL顯示裝置或微型LED中,圓偏光板係為了消除由具有光反射性的畫素電極所產生的外光反射並改善視認性,而搭載於顯示裝置的上面。然而,由於圓偏光板的價格昂貴,所以在顯示裝置的構造方面,被強烈要求省略圓偏光板。 In an organic EL display device or a micro LED, a circular polarizing plate is used in order to avoid a decrease in contrast caused by incident light entering the display device from the outside. In organic EL display devices or micro LEDs, circular polarizers are mounted on top of the display devices in order to eliminate external light reflections generated by light-reflective pixel electrodes and improve visibility. However, since the circular polarizing plate is expensive, it is strongly requested to omit the circular polarizing plate in terms of the structure of the display device.

專利文獻1係揭示有兩層構成的黑色矩陣(參照圖1)。然而,專利文獻1的技術係對裸眼的觀察者顯示立體影像之技術。專利文獻1並未以使用各種顯示功能層之顯示裝置中的對比降低為課題。專利文獻1中,沒有提出省略昂貴的圓偏光板之構成,此外,也沒有揭示抑制黑色矩陣的表面反射之技術。 Patent Document 1 discloses a two-layer black matrix (see FIG. 1 ). However, the technique of Patent Document 1 is a technique for displaying a stereoscopic image to a naked-eye observer. Patent Document 1 does not address the reduction in contrast in a display device using various display function layers. Patent Document 1 does not propose a configuration that omits an expensive circular polarizing plate, and also does not disclose a technique for suppressing surface reflection of a black matrix.

專利文獻2記載有使用第1遮光層與第2遮光層的彩色濾光片。然而,專利文獻2中,未提出省略昂貴的圓偏光板之構成,此外,也沒有揭示抑制第1遮光層的表面反射之技術。再者,在具備紅色發光元件、綠色發光元件、藍色發光元件的微型LED中,不需要彩色濾光片。又,同樣地,色純度提升之有機EL顯示裝置也不需要彩色濾光片。即便在液晶顯示裝置中,在使LED背光的紅色發光、綠色發光、藍色發光依序點亮而顯示 的場序(field sequential)中,也不需要彩色濾光片。專利文獻2並未考慮不具備彩色濾光片之構成。 Patent Document 2 describes a color filter using a first light-shielding layer and a second light-shielding layer. However, Patent Document 2 does not propose a configuration that omits an expensive circular polarizing plate, and also does not disclose a technique for suppressing surface reflection of the first light-shielding layer. Furthermore, in micro LEDs including red light emitting elements, green light emitting elements, and blue light emitting elements, color filters are not required. Also, similarly, an organic EL display device with improved color purity does not require color filters. Even in liquid crystal display devices, red light, green light, and blue light of the LED backlight are sequentially lit to display In the field sequential (field sequential), no color filter is required. Patent Document 2 does not consider a configuration without color filters.

然而,在專利文獻2中,關於第2遮光層覆蓋著色層的端部之特徵、及請求項3的第2遮光層的寬度之特徵,係與專利文獻1的圖16所示的彩色濾光片大致相同。專利文獻1亦記載有第1遮光層與第2遮光層的對準(alignment)之課題。有關專利文獻2的第2遮光層之[0034]至[0036]段落的技術亦記載於例如專利文獻1的[0105]段落。 However, in Patent Document 2, the feature that the second light-shielding layer covers the end of the colored layer and the feature of the width of the second light-shielding layer in Claim 3 are similar to the color filter shown in FIG. 16 of Patent Document 1. The pieces are roughly the same. Patent Document 1 also describes the subject of alignment between the first light-shielding layer and the second light-shielding layer. The technology related to paragraphs [0034] to [0036] of the second light-shielding layer of Patent Document 2 is also described in, for example, paragraph [0105] of Patent Document 1.

先前技術文獻prior art literature 專利文獻patent documents

專利文獻1 日本國專利第5804196號公報 Patent Document 1 Japanese Patent No. 5804196

專利文獻2 日本國專利第6225524號公報 Patent Document 2 Japanese Patent No. 6225524

本發明係有鑑於上述的習知技術或課題而完成者,提供一種在進一步要求高精細化的液晶顯示裝置、微型LED(LED顯示器)及有機EL顯示裝置等的顯示裝置中,可改善顯示對比之黑色矩陣基板、及具備黑色矩陣基板的顯示裝置。 The present invention is made in view of the above-mentioned conventional technologies or problems, and provides a display device that can improve display contrast in display devices such as liquid crystal display devices, micro LED (LED displays), and organic EL display devices that further require high definition. A black matrix substrate, and a display device with a black matrix substrate.

本發明第1態樣的黑色矩陣基板,具備:透明基板;半透射膜,形成於前述透明基板上;第1黑色矩陣層,在前述半透射膜的厚度方向上,以與前述半 透射膜接觸的方式形成於前述半透射膜上,且具備複數個第1開口部;透明樹脂層,以覆蓋前述第1黑色矩陣層之方式形成於前述半透射膜上;及第2黑色矩陣層,形成於前述透明樹脂層上,且具備複數個第2開口部;在從與形成有前述半透射膜之前述透明基板的面相反側的面觀看的平面視圖中,前述半透射膜係與複數個前述第1開口部與前述第1黑色矩陣層重疊,在平面視圖中,複數個前述第2開口部的位置係與複數個前述第1開口部的位置對應。 The black matrix substrate of the first aspect of the present invention comprises: a transparent substrate; a semi-transmissive film formed on the aforementioned transparent substrate; The transmissive film is formed on the aforementioned semi-transmissive film in a contact manner, and has a plurality of first openings; a transparent resin layer is formed on the aforementioned semi-transmissive film to cover the aforementioned first black matrix layer; and a second black matrix layer , is formed on the aforementioned transparent resin layer, and has a plurality of second openings; in a plan view viewed from a surface opposite to the surface of the aforementioned transparent substrate on which the aforementioned semi-transmissive film is formed, the aforementioned semi-transmissive film is the same as the plurality of The plurality of first openings overlaps with the first black matrix layer, and the positions of the plurality of second openings correspond to the positions of the plurality of first openings in plan view.

在本發明第1態樣的黑色矩陣基板中,亦可為前述半透射膜係含有碳作為顏料,前述半透射膜對可視光的透射率係在98%至60%的範圍內。 In the black matrix substrate of the first aspect of the present invention, the semi-transmissive film may contain carbon as a pigment, and the transmittance of the semi-transmissive film to visible light is in the range of 98% to 60%.

在本發明第1態樣的黑色矩陣基板中,前述半透射膜亦可為具有碳、光學上等向性的微粒子、與分散有前述碳及前述微粒子的樹脂之分散體。 In the black matrix substrate according to the first aspect of the present invention, the semi-transmissive film may be a dispersion having carbon, optically isotropic fine particles, and a resin in which the carbon and the fine particles are dispersed.

在本發明第1態樣的黑色矩陣基板中,前述微粒子亦可為二氧化矽的微粒子。 In the black matrix substrate of the first aspect of the present invention, the fine particles may be fine particles of silicon dioxide.

在本發明第1態樣的黑色矩陣基板中,將含有前述樹脂、前述碳和前述微粒子的全部固體含量設為100質量%,前述碳的量係在0.5質量%至15質量%的範圍內,前述微粒子的量係在1質量%至30質量%的範圍內。 In the black matrix substrate of the first aspect of the present invention, the total solid content of the resin, the carbon, and the fine particles is set to 100% by mass, and the amount of the carbon is within the range of 0.5% by mass to 15% by mass, The amount of the aforementioned fine particles is in the range of 1% by mass to 30% by mass.

在本發明第1態樣的黑色矩陣基板中,前述第2黑色矩陣層的線寬亦可小於第1黑色矩陣層的線寬。 In the black matrix substrate of the first aspect of the present invention, the line width of the second black matrix layer may be smaller than the line width of the first black matrix layer.

在本發明第1態樣的黑色矩陣基板中,前述第2黑色矩陣層亦可對近紅外區域具有光透射性。 In the black matrix substrate of the first aspect of the present invention, the second black matrix layer may have light transmittance in the near-infrared region.

前述第1黑色矩陣層的複數個前述第1開口部的每一者亦可具有著色層。 Each of the plurality of first openings of the first black matrix layer may have a colored layer.

在本發明第1態樣的黑色矩陣基板中,前述著色層亦可為紅色層、藍色層及綠色層,且以與複數個前述第1開口部的三個第1開口部對應之方式,於第1開口部設有前述紅色層、前述綠色層及前述藍色層。 In the black matrix substrate of the first aspect of the present invention, the colored layer may be a red layer, a blue layer, and a green layer, and in a manner corresponding to three first openings of the plurality of first openings, The red layer, the green layer, and the blue layer are provided in the first opening.

本發明第2態樣的顯示裝置係具備:上述第1態樣的黑色矩陣基板;顯示功能層;及具備複數個主動元件之陣列基板。 The display device of the second aspect of the present invention comprises: the black matrix substrate of the above-mentioned first aspect; a display function layer; and an array substrate having a plurality of active elements.

本發明係可提供在進一步要求高精細化的液晶顯示裝置、微型LED(LED顯示器)及有機EL顯示裝置等的顯示裝置中,能夠改善顯示對比之黑色矩陣基板、及具備黑色矩陣基板的顯示裝置。 The present invention can provide a black matrix substrate capable of improving display contrast and a display device equipped with a black matrix substrate in display devices such as liquid crystal display devices, micro LED (LED displays), and organic EL display devices that require further high-definition .

10‧‧‧半透射膜 10‧‧‧Semi-transmissive film

11‧‧‧第1黑色矩陣層(黑色矩陣層) 11‧‧‧The first black matrix layer (black matrix layer)

12‧‧‧第2黑色矩陣層(黑色矩陣層) 12‧‧‧The second black matrix layer (black matrix layer)

13‧‧‧微粒子 13‧‧‧fine particles

21‧‧‧第1透明樹脂層 21‧‧‧The first transparent resin layer

22‧‧‧第2透明樹脂層 22‧‧‧The second transparent resin layer

43‧‧‧表面 43‧‧‧surface

47‧‧‧第4絕緣層 47‧‧‧4th insulating layer

49‧‧‧第6絕緣層 49‧‧‧6th insulating layer

55‧‧‧閘極電極 55‧‧‧gate electrode

56‧‧‧汲極電極 56‧‧‧Drain electrode

58‧‧‧通道層 58‧‧‧channel layer

68‧‧‧薄膜電晶體 68‧‧‧Thin Film Transistor

75‧‧‧輔助導體 75‧‧‧Auxiliary conductor

76‧‧‧透明導電膜 76‧‧‧Transparent conductive film

77‧‧‧接合層 77‧‧‧joining layer

80‧‧‧有機EL層 80‧‧‧Organic EL layer

88‧‧‧下部電極 88‧‧‧lower electrode

90‧‧‧n型半導體層 90‧‧‧n-type semiconductor layer

91‧‧‧p型半導體層 91‧‧‧p-type semiconductor layer

93‧‧‧接觸孔 93‧‧‧contact hole

94‧‧‧堤壩 94‧‧‧embankment

95‧‧‧第2平坦化層 95‧‧‧The second planarization layer

96‧‧‧第1平坦化層 96‧‧‧The first planarization layer

148‧‧‧第3絕緣層 148‧‧‧The third insulating layer

156‧‧‧汲極電極 156‧‧‧Drain electrode

189‧‧‧下部電極 189‧‧‧lower electrode

191‧‧‧電洞注入層 191‧‧‧Hole injection layer

248‧‧‧第5絕緣層 248‧‧‧5th insulating layer

750‧‧‧微型LED顯示裝置 750‧‧‧Micro LED display devices

850‧‧‧有機EL顯示裝置 850‧‧‧Organic EL display device

903‧‧‧背光單元 903‧‧‧Backlight unit

904‧‧‧蓋玻璃 904‧‧‧Cover glass

950‧‧‧液晶顯示裝置 950‧‧‧LCD display device

87、187‧‧‧上部電極 87, 187‧‧‧upper electrode

92、192‧‧‧發光層 92, 192‧‧‧luminescent layer

102、310‧‧‧透明基板 102, 310‧‧‧Transparent substrate

109、195‧‧‧密封層 109, 195‧‧‧Sealing layer

205、305‧‧‧畫素開口部 205, 305‧‧‧pixel opening

202、302、802‧‧‧基板 202, 302, 802‧‧‧substrate

150、300、550、650‧‧‧黑色矩陣層 150, 300, 550, 650‧‧‧black matrix layer

250、350、750、850‧‧‧顯示裝置 250, 350, 750, 850‧‧‧display device

201、301、501、801、901‧‧‧陣列基板 201, 301, 501, 801, 901‧‧‧array substrate

102T‧‧‧外面 102T‧‧‧outside

11S‧‧‧第1畫素開口部 11S‧‧‧1st pixel opening

12S‧‧‧第2畫素開口部 12S‧‧‧2nd pixel opening

31、89、121‧‧‧反射電極 31, 89, 121‧‧‧Reflective electrode

32、122、CHIP‧‧‧發光元件 32, 122, CHIP‧‧‧Light-emitting components

B‧‧‧藍色層(著色層) B‧‧‧blue layer (coloring layer)

BW1、BW2‧‧‧線寬 BW1, BW2‧‧‧line width

CB‧‧‧藍色轉換層 CB‧‧‧blue conversion layer

CF‧‧‧著色層 CF‧‧‧coloring layer

CG‧‧‧綠色轉換層 CG‧‧‧Green conversion layer

CR‧‧‧紅色轉換層 CR‧‧‧red conversion layer

G‧‧‧綠色層(著色層) G‧‧‧green layer (coloring layer)

IL1、IL2、IL3‧‧‧外部光 IL1, IL2, IL3‧‧‧external light

LC‧‧‧液晶層 LC‧‧‧liquid crystal layer

R‧‧‧紅色層(著色層) R‧‧‧Red layer (coloring layer)

RL1、RL2、RL3‧‧‧反射光 RL1, RL2, RL3‧‧‧reflected light

圖1係局部地顯示本發明的第1實施形態之黑色矩陣基板的剖面圖。 FIG. 1 is a partial cross-sectional view showing a black matrix substrate according to a first embodiment of the present invention.

圖2係顯示本發明的第1實施形態之黑色矩陣基板的平面圖。 Fig. 2 is a plan view showing a black matrix substrate according to the first embodiment of the present invention.

圖3係局部地顯示具備本發明的第1實施形態之黑色矩陣基板的顯示裝置之剖面圖,且係說明藉由本發明的實施形態所得到的一個效果之圖。 FIG. 3 is a partially sectional view showing a display device including a black matrix substrate according to the first embodiment of the present invention, and is a diagram illustrating one effect obtained by the embodiment of the present invention.

圖4係局部地顯示具備習知的黑色矩陣基板之顯示裝置的一例之剖面圖,且係將圖3所示的黑色矩陣基板與習知的黑色矩陣基板進行比較說明之圖。 4 is a cross-sectional view partially showing an example of a display device having a conventional black matrix substrate, and is a diagram comparing the black matrix substrate shown in FIG. 3 with a conventional black matrix substrate.

圖5係局部地顯示具備本發明的第1實施形態之黑色矩陣基板的顯示裝置之剖面圖,且係說明藉由本發明的實施形態所得到的一個效果之圖。 Fig. 5 is a partially sectional view showing a display device including a black matrix substrate according to the first embodiment of the present invention, and is a diagram illustrating one effect obtained by the embodiment of the present invention.

圖6係局部地顯示具備習知的黑色矩陣基板之顯示裝置的一例之剖面圖,且係將圖5所示的黑色矩陣基板與習知的黑色矩陣基板進行比較說明之圖。 FIG. 6 is a cross-sectional view partially showing an example of a display device having a conventional black matrix substrate, and is a diagram comparing the black matrix substrate shown in FIG. 5 with a conventional black matrix substrate.

圖7係局部地顯示本發明的第1實施形態之黑色矩陣基板的變形例1之剖面圖。 7 is a cross-sectional view partially showing Modification 1 of the black matrix substrate according to the first embodiment of the present invention.

圖8係局部地顯示本發明的第1實施形態之黑色矩陣基板的變形例2之剖面圖。 Fig. 8 is a cross-sectional view partially showing Modification 2 of the black matrix substrate according to the first embodiment of the present invention.

圖9係將具備本發明的第2實施形態之黑色矩陣基板的顯示裝置局部地顯示之剖面圖。 9 is a cross-sectional view partially showing a display device including a black matrix substrate according to a second embodiment of the present invention.

圖10係將設置於具備本發明的第2實施形態的黑色矩陣基板之顯示裝置的陣列基板之薄膜電晶體等的構件局部地顯示之放大圖。 10 is an enlarged view partially showing members such as thin film transistors provided on the array substrate of the display device including the black matrix substrate according to the second embodiment of the present invention.

圖11係將具備本發明的第3實施形態的黑色矩陣基板之顯示裝置局部地顯示之剖面圖。 11 is a cross-sectional view partially showing a display device including a black matrix substrate according to a third embodiment of the present invention.

圖12係將具備本發明的第4實施形態的黑色矩陣基板之顯示裝置局部地顯示之剖面圖。 12 is a cross-sectional view partially showing a display device including a black matrix substrate according to a fourth embodiment of the present invention.

用以實施發明的形態form for carrying out the invention

以下,參照圖式,說明本發明的實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

以下的說明中,對相同或實質上相同的功能及構成要素,係標註相同符號,並將其說明省略或簡單化,或者僅在必要的情況進行說明。各圖中,由於係將各構成要素設成在圖面上可辨識之程度的大小,所以使各構成要素的尺寸及比例與實際者適當地不同。畫素數量、畫素開口部的數量、畫素開口部的形狀,並未受到以下說明的圖面所限制。又,為使本發明的實施形態易於理解地說明,在剖面圖或平面圖中,有減少構成顯示裝置的構件數,說明顯示裝置的構造之情況。有時將構成顯示裝置之顯示功能層等的圖示簡化。 In the following description, the same or substantially the same functions and components are assigned the same symbols, and the description thereof is omitted or simplified, or described only when necessary. In each drawing, since each constituent element is set to be recognizable on the drawing, the size and ratio of each constituent element are suitably different from the actual ones. The number of pixels, the number of pixel openings, and the shape of the pixel openings are not limited by the drawings described below. In addition, in order to explain the embodiments of the present invention easily, the structure of the display device may be described with the number of components constituting the display device reduced in cross-sectional views or plan views. The illustrations of the display function layers constituting the display device, etc. are sometimes simplified.

在以下所述的各實施形態中,係就特徵的部分進行說明,例如,關於使用於一般的顯示裝置的構成要素、與本實施形態的顯示裝置沒有差異的部分,有時則省略說明。 In each of the embodiments described below, the characteristic parts will be described. For example, descriptions of components used in general display devices that are not different from the display device of this embodiment may be omitted.

此外,說明書中,「平面視圖」一詞係指:觀察者在法線方向觀看沒有形成半透射膜或黑色矩陣層之透明基板的面之平面視圖。 In addition, in the description, the term "plan view" refers to a plane view of the plane view of the surface of the transparent substrate on which the semi-transmissive film or black matrix layer is not formed by the observer in the normal direction.

又,說明書中,「第1」或「第2」等的序數詞係為了避免構成要素的混淆而附加者,不限定數量。第1透明樹脂層或第2透明樹脂層,有時僅稱為透明樹脂層。又,第1黑色矩陣層和第2黑色矩陣層,有時僅稱為黑色矩陣層或黑色矩陣。 In addition, in the specification, ordinal numbers such as "first" and "second" are added to avoid confusion of constituent elements, and the number is not limited. The first transparent resin layer or the second transparent resin layer may be simply referred to as a transparent resin layer. Moreover, the 1st black matrix layer and the 2nd black matrix layer are sometimes only called a black matrix layer or a black matrix.

在本發明的實施形態中,在顯示裝置所具備的「顯示功能層」,可使用稱為LED(Light Emitting Diode)的複數個發光二極體元件、亦稱為OLED(Organic Light Emitting Diode)的複數個有機EL(有機電致發光)元件、或液晶層的任一者。 In the embodiment of the present invention, in the "display function layer" of the display device, a so-called LED (Light Emitting Layer) can be used. Diode) a plurality of light-emitting diode elements, a plurality of organic EL (organic electroluminescence) elements also called OLED (Organic Light Emitting Diode), or any of a liquid crystal layer.

(第1實施形態) (first embodiment) (黑色矩陣基板) (Black Matrix Substrate)

圖1係局部地顯示本發明的第1實施形態之黑色矩陣基板的剖面圖。 FIG. 1 is a partial cross-sectional view showing a black matrix substrate according to a first embodiment of the present invention.

黑色矩陣基板150具備:透明基板102;形成於透明基板102上的半透射膜10;第1黑色矩陣層11,在半透射膜10的厚度方向上以與半透射膜10接觸的方式形成於半透射膜10上;第1透明樹脂層21(透明樹脂層),以覆蓋第1黑色矩陣層11的方式形成於半透射膜10上;形成於第1透明樹脂層21上的第2黑色矩陣層12;及第2透明樹脂層22,以覆蓋第2黑色矩陣層12的方式形成於第1透明樹脂層21上。 The black matrix substrate 150 has: a transparent substrate 102; a semi-transmissive film 10 formed on the transparent substrate 102; On the transmissive film 10; the first transparent resin layer 21 (transparent resin layer), is formed on the semi-transmissive film 10 to cover the first black matrix layer 11; the second black matrix layer formed on the first transparent resin layer 21 12; and the second transparent resin layer 22 is formed on the first transparent resin layer 21 so as to cover the second black matrix layer 12 .

即,黑色矩陣基板150係具有在透明基板102上依序積層有半透射膜10、第1黑色矩陣層11、第1透明樹脂層21、第2黑色矩陣層12及第2透明樹脂層22而成的構造。 That is, the black matrix substrate 150 has a semi-transmissive film 10, a first black matrix layer 11, a first transparent resin layer 21, a second black matrix layer 12, and a second transparent resin layer 22 laminated in sequence on the transparent substrate 102. formed structure.

圖1中,亦可不形成第2透明樹脂層22。 In FIG. 1, the second transparent resin layer 22 may not be formed.

圖2係顯示圖1所示的黑色矩陣基板150之平面圖,且為觀看未形成有半透射膜10之透明基板102的面之圖。亦即,圖2係在圖1的符號OB所示的方向,觀察黑色矩陣基板150時之平面圖。因此,在圖2 中,第1黑色矩陣層11及第2黑色矩陣層12係重疊配設在半透射膜10的下部。第1黑色矩陣層11與第2黑色矩陣層12的重疊,係形成黑色矩陣基板150適用於顯示裝置的情況時的有效顯示區域。在平面視圖中,以覆蓋此有效顯示區域的方式形成有半透射膜10。 FIG. 2 is a plan view of the black matrix substrate 150 shown in FIG. 1 , and is a view of the surface of the transparent substrate 102 on which the semi-transmissive film 10 is not formed. That is, FIG. 2 is a plan view of the black matrix substrate 150 viewed from the direction indicated by the symbol OB in FIG. 1 . Therefore, in Figure 2 Among them, the first black matrix layer 11 and the second black matrix layer 12 are overlapped and arranged on the lower part of the semi-transmissive film 10 . The overlapping of the first black matrix layer 11 and the second black matrix layer 12 forms an effective display area when the black matrix substrate 150 is applied to a display device. The semi-transmissive film 10 is formed so as to cover this effective display area in plan view.

(透明基板) (transparent substrate)

作為可適用於黑色矩陣基板150之透明基板102的材料,係可使用玻璃基板、石英基板、藍寶石基板、塑膠基板等的透明基板。 As the material of the transparent substrate 102 applicable to the black matrix substrate 150, transparent substrates such as glass substrates, quartz substrates, sapphire substrates, and plastic substrates can be used.

此外,將顯示功能層及驅動顯示功能層之陣列基板與黑色矩陣基板150貼合而構成顯示裝置時,陣列基板及黑色矩陣基板150之每一者的基板材料宜相同。 In addition, when the display device is formed by laminating the display functional layer and the array substrate for driving the display functional layer with the black matrix substrate 150 , the substrate materials of each of the array substrate and the black matrix substrate 150 should be the same.

尤其,以構成陣列基板之基板材料的熱膨脹率、與構成黑色矩陣基板150之基板材料的熱膨脹率相同較為理想。將不同的基板材料使用於陣列基板和黑色矩陣基板150時,從熱膨脹率的觀點來看,恐有基板的翹曲或剝落等不良情況產生之虞。 In particular, it is ideal that the thermal expansion coefficient of the substrate material constituting the array substrate is the same as that of the substrate material constituting the black matrix substrate 150 . When different substrate materials are used for the array substrate and the black matrix substrate 150 , from the viewpoint of thermal expansion coefficient, there may be problems such as warpage or peeling of the substrate.

(第1黑色矩陣層、第2黑色矩陣層) (1st black matrix layer, 2nd black matrix layer)

第1黑色矩陣層11具有複數個第1畫素開口部11S(第1開口部)。第2黑色矩陣層12具有複數個第2畫素開口部12S(第2開口部)。 The first black matrix layer 11 has a plurality of first pixel openings 11S (first openings). The second black matrix layer 12 has a plurality of second pixel openings 12S (second openings).

從與形成有半透射膜10之透明基板102的面相反側的面(由符號OB所示的面)觀看的平面視圖中,半透射膜 10係以覆蓋複數個第1畫素開口部11S和第1黑色矩陣層11的方式重疊。在平面視圖中,複數個第2畫素開口部12S的位置係與複數個第1畫素開口部11S的位置對應。 In a plan view viewed from the surface (the surface indicated by symbol OB) opposite to the surface of the transparent substrate 102 on which the semi-transmissive film 10 is formed, the semi-transmissive film Reference numeral 10 overlaps so as to cover the plurality of first pixel openings 11S and the first black matrix layer 11 . In plan view, the positions of the plurality of second pixel openings 12S correspond to the positions of the plurality of first pixel openings 11S.

(黑色矩陣層的構成材料) (Constituent material of black matrix layer)

第1黑色矩陣層11及第2黑色矩陣層12的構成材料可相同或者也可相異。例如,關於第1黑色矩陣層11及第2黑色矩陣層12的製造步驟,第2黑色矩陣層12係在形成第1黑色矩陣層11後,利用一般的光微影法形成。因此,例如,能以可進行光微影步驟之透明基板102的對準方式,提高觀察光的透射率。 The constituent materials of the first black matrix layer 11 and the second black matrix layer 12 may be the same or different. For example, regarding the manufacturing steps of the first black matrix layer 11 and the second black matrix layer 12 , the second black matrix layer 12 is formed by a general photolithography method after the first black matrix layer 11 is formed. Therefore, for example, the transmittance of observation light can be improved by aligning the transparent substrate 102 that can be subjected to a photolithography step.

作為第1黑色矩陣層11及第2黑色矩陣層12的構成材料,使用分散有具有遮光性的碳且可溶於鹼(alkali)的感光性阻劑是簡便的。第1黑色矩陣層11的光學濃度(△OD)只要為2以上4以下即可。亦可將第1黑色矩陣層11的光學濃度設為4以上,惟在本發明的實施形態的構成中,由於第1黑色矩陣層11與第2黑色矩陣層12重疊,所以不需要提高第1黑色矩陣層11及第2黑色矩陣層12之每一者的單獨的遮光性。碳亦稱為碳黑。 As a constituent material of the first black matrix layer 11 and the second black matrix layer 12, it is convenient to use a photoresist in which carbon having light-shielding properties is dispersed and soluble in alkali (alkali). The optical density (ΔOD) of the first black matrix layer 11 should just be 2 or more and 4 or less. Also can make the optical density of the 1st black matrix layer 11 be more than 4, but in the structure of embodiment of the present invention, because the 1st black matrix layer 11 overlaps with the 2nd black matrix layer 12, so need not raise the 1st black matrix layer 11. Individual light-shielding properties of the black matrix layer 11 and the second black matrix layer 12 . Carbon is also known as carbon black.

又,第2黑色矩陣層12亦可對於近紅外區域具有光透射性。於此情況,在光微影步驟中進行透明基板102的對準時,亦可併用近紅外區域作為觀察光。具體而言,作為使用於第2黑色矩陣層12的顏料,例如, 若使用紅色或黃色的有機顏料與加入藍色或紫色的有機顏料而透射近紅外光的顏料時,也可使用近紅外區域的光來進行透明基板102的對準。在使用有機顏料得到可視區域的遮光性時,亦可減少碳對於第2黑色矩陣層12的添加、或者去除碳的添加。 Moreover, the 2nd black matrix layer 12 may have light transmittance to a near-infrared region. In this case, when aligning the transparent substrate 102 in the photolithography step, the near-infrared region may also be used as observation light. Specifically, as the pigment used for the 2nd black matrix layer 12, for example, If red or yellow organic pigments and blue or violet organic pigments are added to transmit near-infrared light, light in the near-infrared region can also be used to align the transparent substrate 102 . When the light-shielding properties of the visible region are obtained using an organic pigment, the addition of carbon to the second black matrix layer 12 can be reduced or removed.

或者,在形成第1黑色矩陣層11時為了讀取形成於基板的端面之對準標記,也可在第2黑色矩陣層的塗布形成步驟,使用EBR(Edge Bead Removal)的技術。EBR係指去除在阻劑塗布時容易產生之基板端部(端面)的阻劑的隆起之技術。例如,藉由在所塗布的第2黑色矩陣層中,僅去除塗布於基板端部的部分,可讀取形成屬於基底的第1黑色矩陣層11時,形成於端面的對準標記。 Alternatively, in order to read the alignment mark formed on the end surface of the substrate when the first black matrix layer 11 is formed, EBR (Edge Bead Removal) technology may be used in the coating formation step of the second black matrix layer. EBR is a technique for removing resist bumps at the end (end face) of a substrate that tends to occur during resist coating. For example, by removing only the portion applied to the end of the substrate in the applied second black matrix layer, it is possible to read the alignment mark formed on the end surface when forming the first black matrix layer 11 which is the base.

使用於第1黑色矩陣層11及第2黑色矩陣層12之碳的粒徑,可設為10nm至100nm。較佳為20nm至60nm。為了使碳均一地分散於阻劑,Sp值(溶解度參數)係以使用例如為10以上的分散劑較佳。藉由碳均一地分散到阻劑,容易使黑色矩陣層的介電常數降低,故在阻劑中提高碳的分散性是較佳的。藉由縮小黑色矩陣層的介電常數,可將黑色矩陣基板150有效地適用於具有液晶層作為顯示功能層的顯示裝置。 The particle diameter of the carbon used for the 1st black matrix layer 11 and the 2nd black matrix layer 12 can be set as 10 nm - 100 nm. Preferably it is 20nm to 60nm. In order to uniformly disperse carbon in the resist, it is preferable to use a dispersant with an Sp value (solubility parameter) of, for example, 10 or more. Since carbon is uniformly dispersed in the resist, the dielectric constant of the black matrix layer is likely to decrease, so it is preferable to increase the dispersion of carbon in the resist. By reducing the dielectric constant of the black matrix layer, the black matrix substrate 150 can be effectively applied to a display device having a liquid crystal layer as a display function layer.

(黑色矩陣層的膜厚) (film thickness of black matrix layer)

可適用於本發明的實施形態之黑色矩陣層的膜厚也可沒有特地規定,例如,作為標準的膜厚,可從1μm至2μm的範圍選擇。 The film thickness of the black matrix layer applicable to the embodiment of the present invention is not particularly specified, for example, as a standard film thickness, it can be selected from the range of 1 μm to 2 μm.

(可添加於黑色矩陣層的無機材料) (Inorganic materials that can be added to the black matrix layer)

亦可在黑色矩陣的阻劑,加入例如鈦黑等的其他遮光性顏料。為了改善分散性,亦可將氧化鈦、碳酸鈣、二氧化矽等的微粒子加入阻劑。 Other light-shielding pigments such as titanium black can also be added to the resist of the black matrix. In order to improve the dispersion, fine particles such as titanium oxide, calcium carbonate, and silicon dioxide can also be added to the resist.

(黑色矩陣層的線寬) (line width of black matrix layer)

第1黑色矩陣層11及第2黑色矩陣層12之每一者的線寬BW1、BW2亦可無特別規定,但是例如,第2黑色矩陣層12的線寬BW2亦可小於第1黑色矩陣層11的線寬BW1,線寬BW2與線寬BW1亦可相等。 The line widths BW1 and BW2 of each of the first black matrix layer 11 and the second black matrix layer 12 may not be particularly specified, but for example, the line width BW2 of the second black matrix layer 12 may also be smaller than that of the first black matrix layer. The line width BW1 of 11, the line width BW2 and the line width BW1 may also be equal.

本發明實施形態的黑色矩陣基板150係可適用於300ppi以上、進而可適用於500ppi以上2000ppi等高精細畫素的顯示裝置。在具有高精細畫素的顯示裝置中,畫素的開口率是重要的。因此,以線寬BW1盡可能變細的方式形成第1黑色矩陣層11較佳。若第2黑色矩陣層12的線寬BW2比第1黑色矩陣層11的線寬BW1寬,則畫素的開口率會降低,並不理想。 The black matrix substrate 150 of the embodiment of the present invention is applicable to display devices with high-definition pixels such as 300 ppi or above, and furthermore, 500 ppi or above 2000 ppi. In a display device having high-definition pixels, the aperture ratio of pixels is important. Therefore, it is preferable to form the first black matrix layer 11 so that the line width BW1 becomes as thin as possible. If the line width BW2 of the second black matrix layer 12 is wider than the line width BW1 of the first black matrix layer 11, the aperture ratio of the pixel will decrease, which is not preferable.

第1黑色矩陣層11及第2黑色矩陣層12之每一者的線寬BW1、BW2或膜厚、或者黑色矩陣基板150的厚度方向之第1黑色矩陣層11與第2黑色矩陣層12分離的距離,係可藉由顯示裝置之畫面的大小或對比的提升而改變。 The line width BW1, BW2 or film thickness of each of the first black matrix layer 11 and the second black matrix layer 12, or the separation of the first black matrix layer 11 and the second black matrix layer 12 in the thickness direction of the black matrix substrate 150 The distance can be changed by increasing the size or contrast of the screen of the display device.

或者,較佳為考量光微影步驟的對準精度,使第2黑色矩陣層12的線寬BW2比第1黑色矩陣層11 的線寬BW1窄。例如,若對準精度為±1.5μm,則只要使第2黑色矩陣層12的線寬BW2與第1黑色矩陣層11的線寬BW1相比較之下,單側窄1.5μm即可(兩側為3μm)。考量對準容許量,使第2黑色矩陣層12的線寬BW2變細。 Or, it is preferable to consider the alignment accuracy of the photolithography step, so that the line width BW2 of the second black matrix layer 12 is larger than that of the first black matrix layer 11. The line width of BW1 is narrow. For example, if the alignment accuracy is ±1.5 μm, then as long as the line width BW2 of the second black matrix layer 12 is compared with the line width BW1 of the first black matrix layer 11, one side is narrower by 1.5 μm (both sides is 3 μm). The line width BW2 of the second black matrix layer 12 is made thinner in consideration of the alignment allowance.

關於膜厚,亦可使第2黑色矩陣層12的膜厚比第1黑色矩陣層11的膜厚薄。形成第2黑色矩陣層12之鹼性可溶性感光性阻劑(後述的碳分散體)的透射率是可調整的。第2黑色矩陣層12的阻劑,係例如可調整曝光波長的透射率或近紅外區域之波長的透射率。在近紅外區域之透射率的調整(後述)中,例如可混合屬於有機顏料之黃色顏料與紫色顏料等相反色的顏料等,在可視區域中可得到“黑”,可活用對有機顏料的紅外線之透射性。 About the film thickness, the film thickness of the 2nd black matrix layer 12 can also be made thinner than the film thickness of the 1st black matrix layer 11. The transmittance of the alkali-soluble photoresist (carbon dispersion to be described later) forming the second black matrix layer 12 can be adjusted. The resist of the second black matrix layer 12 can adjust, for example, the transmittance of the exposure wavelength or the transmittance of the wavelength in the near-infrared region. In the adjustment of the transmittance in the near-infrared region (described later), for example, pigments of opposite colors, such as yellow pigments and purple pigments, which are organic pigments, can be mixed to obtain "black" in the visible region, and the infrared rays of organic pigments can be utilized. The transmittance.

(半透射膜) (semi-transmissive film)

半透射膜10係具有碳、光學上等向性的微粒子、分散有碳及微粒子的樹脂之分散體。 The semi-transmissive film 10 is a dispersion having carbon, optically isotropic fine particles, and a resin in which carbon and fine particles are dispersed.

作為使用於半透射膜10的材料,基本上可適用與上述之黑色矩陣的材料大致相同的材料。較佳為以含有碳作為主顏料的樹脂分散體來形成半透射膜10。較佳為將半透射膜10對可視光的透射率設為98%至60%的範圍,以此透射率的觀點來調整碳對樹脂分散體的添加量。 As a material used for the semi-transmissive film 10, substantially the same material as that of the above-mentioned black matrix can be applied. It is preferable to form the semi-transmissive film 10 with a resin dispersion containing carbon as a main pigment. It is preferable to set the transmittance of the semi-transmissive film 10 to visible light in the range of 98% to 60%, and adjust the amount of carbon added to the resin dispersion from the viewpoint of the transmittance.

在微型LED或有機EL顯示裝置中,多在屬於發光元件的LED或有機EL層的下部具備有光反射 性電極。在具有此種構造的微型LED或有機EL顯示裝置中,由光反射性電極所產生之外部入射光的再反射光會導致辨識性降低。一般而言,為了消除外部入射光的再反射光,高價的圓偏光板係併用於顯示裝置。或者,在大部分的液晶顯示裝置中,係使用正交偏光鏡(crossed Nicol)的(偏光軸正交)2片偏光板。使用此種圓偏光板或偏光板時,為了改善分散性或使半透射膜的折射率降低,不會產生偏光態的改變(collapse of polarization),較佳為將光學上等向性且在可視區域中透明的無機微粒子加到半透射膜。 In micro-LED or organic EL display devices, the lower part of the LED or organic EL layer that is a light-emitting element is often equipped with light reflection sex electrodes. In the micro LED or organic EL display device having such a structure, the re-reflected light of the externally incident light by the light reflective electrode leads to deterioration of visibility. In general, in order to eliminate re-reflected light of externally incident light, an expensive circularly polarizing plate is used in a display device. Alternatively, in most liquid crystal display devices, two polarizing plates (crossed Nicols) (the polarization axes are crossed) are used. When using such a circular polarizing plate or polarizing plate, in order to improve the dispersion or reduce the refractive index of the semi-transmissive film, the change of the polarization state (collapse of polarization) will not occur, and it is preferable to optically isotropic and visible. Transparent inorganic particles in the region are added to the semi-transmissive film.

在半透射膜10,分散有光學上等向的微粒子13。光學上等向的微粒子13,係適用固體含量比18質量%的二氧化矽微粒子。 Optically isotropic fine particles 13 are dispersed in the semi-transmissive film 10 . The optically isotropic microparticles 13 are silica microparticles with a solid content ratio of 18% by mass.

此外,「光學上等向」意指:適用於本發明實施形態的透明微粒子具有a軸、b軸、c軸分別相等的結晶構造、或非晶,光的傳遞不會受到結晶軸或結晶構造影響且為等向。二氧化矽微粒子具有非晶質構造(非晶)。作為樹脂粒珠(resin beads)等的樹脂微粒子,已知有含折射率在內具有各種性質的微粒子,可適用此等微粒子。亦可使用丙烯酸、苯乙烯、胺基甲酸酯、尼龍、三聚氰胺、苯胍

Figure 107144279-A0202-12-0015-13
(benzoguanamine)等的樹脂微粒子。 In addition, "optically isotropic" means that the transparent fine particles applicable to the embodiments of the present invention have a crystal structure in which the a-axis, b-axis, and c-axis are equal, or are amorphous, and the transmission of light is not affected by the crystal axes or the crystal structure. influence and is isotropic. Silica fine particles have an amorphous structure (amorphous). As resin fine particles such as resin beads, fine particles having various properties including a refractive index are known, and such fine particles are applicable. Also available in acrylic, styrene, urethane, nylon, melamine, benzoguanidine
Figure 107144279-A0202-12-0015-13
(Benzoguanamine) and other resin fine particles.

作為在光學上等向且在可視區域中呈透明的無機微粒子之代表,已知有二氧化矽(silica)的微粒子。二氧化矽之微粒子的粒徑,係可選擇自例如5nm至300nm的範圍。亦可使在可視區域中呈透明且粒徑不同 的2種以上的無機微粒子與碳一起分散到半透射膜10。二氧化矽微粒子的併用會妨礙在碳單體中容易產生之2次粒子的生成,可改善碳的分散性。 Microparticles of silicon dioxide (silica) are known as a representative of inorganic fine particles that are optically isotropic and transparent in the visible region. The particle size of the fine particles of silicon dioxide can be selected from the range of, for example, 5nm to 300nm. It is also possible to make transparent in the visible area and have different particle sizes Two or more kinds of inorganic fine particles are dispersed in the semi-transmissive film 10 together with carbon. The combined use of silica fine particles prevents the formation of secondary particles that are likely to be generated in a single carbon, and improves the dispersibility of carbon.

此外,對半透射膜10添加上述微粒子13,並不是為了對半透射膜10賦予光散射。在大部分適用於顯示裝置的散射膜含有粒子的情況,係如專利第3531615號公報的請求項1所記載,必須使用平均粒徑為1.5μm以上3.0μm以下之微米單位的大小的粒子。也就是說,若沒有使用具有比可視區域光的波長大的粒徑之粒子,則作為散射膜就會無法獲得適當的光散射性。 In addition, adding the above-mentioned fine particles 13 to the semi-transmissive film 10 is not for imparting light scattering to the semi-transmissive film 10 . When most scattering films suitable for display devices contain particles, as described in Claim 1 of Patent No. 3531615, particles with an average particle diameter of 1.5 μm to 3.0 μm must be used in micron units. That is, unless particles having a particle size larger than the wavelength of light in the visible region are not used, appropriate light scattering properties cannot be obtained as a scattering film.

又,由於二氧化矽的折射率比碳小,所以二氧化矽具有降低半透射膜10的折射率之效果。具有低折射率的半透射膜10會抑制在半透射膜10與第1黑色矩陣層11的界面之光的反射,具有可提升視認性之效果。 In addition, since the refractive index of silicon dioxide is lower than that of carbon, silicon dioxide has the effect of lowering the refractive index of the semi-transmissive film 10 . The semi-transmissive film 10 having a low refractive index suppresses the reflection of light at the interface between the semi-transmissive film 10 and the first black matrix layer 11 and has the effect of improving visibility.

例如,當半透射膜10的光透射率係在98%至95%等的高透射率區域時,有時在第1黑色矩陣層11與半透射膜10的界面的光反射會產生因干涉所致之波紋,有時可觀察到第1黑色矩陣層11些微地著色。因反射光所產生之此種些微的著色,在將顯示裝置的顯示關閉(off)時的黑顯示時容易被觀察。 For example, when the light transmittance of the semi-transmissive film 10 is in a high transmittance region such as 98% to 95%, sometimes light reflection at the interface between the first black matrix layer 11 and the semi-transmissive film 10 may be caused by interference. As a result, the first black matrix layer 11 may be slightly colored in some cases. Such slight coloring due to reflected light is easy to be observed in black display when the display of the display device is turned off.

相對地,藉由併用二氧化矽微粒子與碳來形成半透射膜10,可得到防止此種波紋產生之效果。從上述的觀點考量,含有在光學上等向且在可視區域中呈透明的無機微粒子之半透射膜是有用的。 On the other hand, by forming the semi-transmissive film 10 together with silica fine particles and carbon, the effect of preventing such moiré can be obtained. From the viewpoints described above, a semi-transmissive film containing inorganic fine particles that are optically isotropic and transparent in a visible region is useful.

此外,如上述之第2黑色矩陣層12的材料構成所示,含有有機顏料作為主要顏料成分之半透射膜與第1黑色矩陣層11的界面之外部光的反射光,有時看起來著色成黃色。 In addition, as shown in the above-mentioned material composition of the second black matrix layer 12, the reflected light of the external light at the interface between the semi-transmissive film containing organic pigments as the main pigment component and the first black matrix layer 11 may appear to be colored. yellow.

相對地,含有碳作為主要的顏料成分之半透射膜10,其反射光是無變化的(flat),幾乎沒有著色。反射光是無變化的係指在400nm至700nm之可視區域的範圍中,例如在100nm等的小範圍(range)中,沒有透射率為2%以上的凹凸(變動),能得到以大致直線表示的透射率曲線。 In contrast, the semi-transmissive film 10 containing carbon as a main pigment component is flat in reflected light and hardly colored. No change in reflected light means that in the range of the visible region from 400nm to 700nm, for example, in a small range (range) such as 100nm, there is no unevenness (variation) with a transmittance of 2% or more, and it can be expressed as a roughly straight line the transmittance curve.

作為可適用於本發明實施形態之半透射膜10的形成方法,係以成為整面塗布膜(在有效顯示區域內未形成具有凹凸的圖案之平坦的膜)的方式形成半透射膜10較佳。藉此,可簡單地形成半透射膜10。半透射膜10的膜厚亦可沒有特別的規定,例如可選擇自0.5μm至1.5μm的範圍。也可配合顯示裝置之畫素開口部的大小,在半透射膜10的一部分設置畫素開口部。 As a method of forming the semi-transmissive film 10 that can be applied to the embodiment of the present invention, it is preferable to form the semi-transmissive film 10 so that it becomes a full-surface coating film (a flat film with no uneven pattern formed in the effective display area). . Thereby, the semi-transmissive film 10 can be easily formed. The film thickness of the semi-transmissive film 10 is not particularly limited, for example, it can be selected from the range of 0.5 μm to 1.5 μm. A pixel opening may be provided in a part of the semi-transmissive film 10 in accordance with the size of the pixel opening of the display device.

半透射膜10對可視光的透射率(代表性而言,光波長為550nm時的透射率),係可選擇自98%至60%的範圍。透射率為99%以上的半透射膜,係如上述容易產生因外光反射的干涉所致之波紋,會損及「黑顯示」的顯示品質。當半透射膜的透射率低於60%時,會導致顯示裝置的亮度降低,所以是不理想的。又,若透射率小於60%,將無法得到低反射率。 The transmittance of the semi-transmissive film 10 to visible light (typically, the transmittance when the light wavelength is 550 nm) can be selected from the range of 98% to 60%. A semi-transmissive film with a transmittance of more than 99% is prone to ripples caused by the interference of external light reflection as mentioned above, which will damage the display quality of "black display". When the transmittance of the semi-transmissive film is lower than 60%, it is not preferable because the brightness of the display device is lowered. Also, if the transmittance is less than 60%, low reflectance cannot be obtained.

半透射膜10的透射率,只要因應使用於黑色矩陣基板之半透射膜的膜厚,調整為98%至60%的範圍即可。 The transmittance of the semi-transmissive film 10 can be adjusted in the range of 98% to 60% according to the film thickness of the semi-transmissive film used on the black matrix substrate.

又,黑色矩陣基板150藉由具備上述的半透射膜10,可在透明基板102與半透射膜10的界面,得到0.3%至1%的低反射率。 In addition, the black matrix substrate 150 can obtain a low reflectance of 0.3% to 1% at the interface between the transparent substrate 102 and the semi-transmissive film 10 by including the above-mentioned semi-transmissive film 10 .

若使添加於半透射膜10的碳量增加來提高碳濃度,則半透射膜10的折射率會變高,半透射膜10的反射率會增加。若半透射膜10的透射率小於60%時,則折射率會變高,反射率會變高。 If the amount of carbon added to the semi-transmissive film 10 is increased to increase the carbon concentration, the refractive index of the semi-transmissive film 10 will increase, and the reflectance of the semi-transmissive film 10 will increase. When the transmittance of the semi-transmissive film 10 is less than 60%, the refractive index becomes high and the reflectance becomes high.

關於半透射膜10之透射率的調整,在將含有構成半透射膜10的分散體之樹脂、光學上等向性的微粒子13、及碳的全部固體含量設為100質量%的情況下,碳量係可選擇自例如0.5質量%至15質量%的範圍。碳量為0.4質量%以下的半透射膜,低反射的效果會變小,且容易發生因上述的波紋所產生的干涉色。當碳量超過15質量%時,半透射膜的光學濃度會提升,將變得難以得到低反射的效果。 Regarding the adjustment of the transmittance of the semi-transmissive film 10, when the total solid content of the resin containing the dispersion constituting the semi-transmissive film 10, the optically isotropic fine particles 13, and carbon is 100% by mass, the carbon The amount can be selected from the range of, for example, 0.5% by mass to 15% by mass. A semi-transmissive film having a carbon content of 0.4% by mass or less has a small effect of low reflection and easily generates interference color due to the above-mentioned moiré. When the amount of carbon exceeds 15% by mass, the optical density of the semi-transmissive film increases, making it difficult to obtain a low reflection effect.

又,在將含有上述之樹脂、微粒子13、及碳的全部固體含量設為100質量%時,二氧化矽微粒子的添加量,係可選擇自例如1質量%至30質量%的範圍。若二氧化矽微粒子為1質量%以下,則容易產生因波紋所致之干涉色。若碳及二氧化矽微粒子的添加量超過45質量%、進而超過50質量%時,後述之阻劑的塗布適性容易降低。若碳及二氧化矽微粒子的添加量變過少時,會無法在半透射膜上獲得所期待的特性。 Also, when the total solid content containing the above-mentioned resin, fine particles 13, and carbon is taken as 100% by mass, the amount of silica fine particles to be added can be selected from a range of, for example, 1% by mass to 30% by mass. When the silica fine particles are 1% by mass or less, interference colors due to moiré are likely to occur. When the added amount of carbon and silica fine particles exceeds 45% by mass, and further exceeds 50% by mass, the coating suitability of the resist described later is likely to decrease. If the amount of carbon and silica fine particles added is too small, desired characteristics cannot be obtained on the semi-transmissive film.

作為可適用於形成半透射膜10或黑色矩陣層11、12時所使用的阻劑之鹼性可溶性樹脂,係可使用例如:自丙烯酸、甲基丙烯酸、丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸丁酯、甲基丙烯酸丁酯等的丙烯酸烷酯或甲基丙烯酸烷酯、環狀的丙烯酸環己酯或甲基丙烯酸酯、丙烯酸羥乙酯(hydroxyethyl acrylate)或甲基丙烯酸酯、苯乙烯等選擇之1~5種左右的單體,且可使用合成為分子量5000~100000左右的樹脂。再者,也可使用環氧(甲基)丙烯酸酯等一般可光聚合的樹脂等。亦可使用圖案化特性、耐熱性優異的卡多樹脂(cardo resin)。 As the alkaline soluble resin applicable to the resist used for forming the semi-transmissive film 10 or the black matrix layers 11 and 12, for example, acrylic acid, methacrylic acid, methyl acrylate, methyl methacrylate, Alkyl acrylate or methacrylate of ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, etc., cyclic cyclohexyl acrylate or methacrylate, hydroxyethyl acrylate (hydroxyethyl acrylate) or methacrylate, styrene, etc. 1 to 5 monomers selected, and resins synthesized with a molecular weight of about 5,000 to 100,000 can be used. In addition, general photopolymerizable resins, such as epoxy (meth)acrylate, etc. can also be used. Cardo resin excellent in patterning properties and heat resistance can also be used.

作為適用於形成半透射膜10或黑色矩陣層11、12時所使用的阻劑之光聚合起始劑,可使用自以往週知的化合物,惟較佳為使用肟酯(oxime ester)化合物,其係在使用於不透射光的黑色感光性樹脂組成物時也可達成高感度化。 As the photopolymerization initiator suitable for the resist used to form the semi-transmissive film 10 or the black matrix layers 11 and 12, conventionally known compounds can be used, but oxime ester compounds are preferably used, It can also achieve high sensitivity when used in a black photosensitive resin composition that does not transmit light.

使用於形成半透射膜10或黑色矩陣層11、12時所用的阻劑之溶劑,係可舉出例如:甲醇、乙醇、乙基賽珞蘇(ethyl cellosolve)、乙基賽珞蘇乙酸酯、二甘二甲醚(diglyme)、環己酮、乙苯、二甲苯、乙酸異戊酯、乙酸正戊酯、丙二醇單甲醚(propylene glycol monomethyl ether)、丙二醇單甲醚乙酸酯(propylene glycol monomethyl ether acetate)、丙二醇單乙醚、丙二醇單乙醚乙酸酯、二乙二醇、二乙二醇單甲醚、二乙二醇單甲醚乙酸酯、二乙二醇單乙醚、二乙二醇單乙醚乙 酸酯、二乙二醇單丁醚、二乙二醇單丁醚乙酸酯、三乙二醇(triethylene glycol)、三乙二醇單甲基醚、三乙二醇單甲醚乙酸酯、三乙二醇單乙醚、三乙二醇單乙醚乙酸酯、液體聚乙二醇(liquid polyethylene glycol)、二丙二醇單甲醚、二丙二醇單甲醚乙酸酯、二丙二醇單乙醚、二丙二醇單乙醚乙酸酯、乳酸酯(lactate)、乙氧基丙酸乙酯(ethyl ethoxypropionate)等。 Solvents used for the resist used in forming the semi-transmissive film 10 or the black matrix layers 11 and 12 include, for example, methanol, ethanol, ethyl cellosolve, and ethyl cellosolve acetate. , diglyme, cyclohexanone, ethylbenzene, xylene, isoamyl acetate, n-pentyl acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (propylene glycol monomethyl ether) glycol monomethyl ether acetate), propylene glycol monoethyl ether, propylene glycol monoethyl ether acetate, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol Glycol Monoethyl Ether B Ester, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, triethylene glycol, triethylene glycol monomethyl ether, triethylene glycol monomethyl ether acetate , triethylene glycol monoethyl ether, triethylene glycol monoethyl ether acetate, liquid polyethylene glycol, dipropylene glycol monomethyl ether, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether, Propylene glycol monoethyl ether acetate, lactate, ethyl ethoxypropionate, etc.

再者,可併用用以使阻劑的塗布性提升之界面活性劑、用以使阻劑對基板的密接性提升之矽烷偶合劑(silane coupling agent)等。 Furthermore, a surfactant for improving the applicability of the resist, a silane coupling agent for improving the adhesion of the resist to the substrate, and the like may be used in combination.

(利用本實施形態的黑色矩陣基板所得到的效果1) (Effect 1 obtained by using the black matrix substrate of the present embodiment)

圖3係局部地顯示具備有本發明第1實施形態的黑色矩陣基板150之顯示裝置250的剖面圖,且說明藉由本發明的實施形態所得到的一個效果之圖。 FIG. 3 is a partial cross-sectional view of a display device 250 including a black matrix substrate 150 according to the first embodiment of the present invention, and is a diagram illustrating an effect obtained by the embodiment of the present invention.

圖3所示的顯示裝置250,係藉由將黑色矩陣基板150與陣列基板201以面對面的方式貼合而構成。 The display device 250 shown in FIG. 3 is formed by laminating the black matrix substrate 150 and the array substrate 201 in a face-to-face manner.

黑色矩陣基板150係具有參照圖1及圖2所說明的構造。陣列基板201具備:基板202;形成於基板202上的複數個反射電極121;形成於複數個反射電極121的每一者之有機EL等的發光元件122;以及連接於反射電極121的主動元件。在陣列基板201上,主動元件係配列成矩陣狀,在圖3中則加以省略。 The black matrix substrate 150 has the structure described with reference to FIGS. 1 and 2 . The array substrate 201 includes: a substrate 202 ; a plurality of reflective electrodes 121 formed on the substrate 202 ; a light-emitting element 122 such as an organic EL formed on each of the plurality of reflective electrodes 121 ; and an active element connected to the reflective electrodes 121 . On the array substrate 201 , active elements are arranged in a matrix, which is omitted in FIG. 3 .

圖4係局部地顯示具備有習知的黑色矩陣基板300之顯示裝置350的剖面圖,為將圖3所示的黑色矩陣基板150與習知的黑色矩陣基板300進行比較說明的圖。 FIG. 4 is a partial cross-sectional view of a display device 350 having a conventional black matrix substrate 300 , and is a diagram comparing the black matrix substrate 150 shown in FIG. 3 with the conventional black matrix substrate 300 .

黑色矩陣基板300係與圖1及圖2所示的黑色矩陣基板150不同,在透明基板310上沒有形成半透射膜,具有1層黑色矩陣層30形成於透明基板310上的構造。陣列基板301具備:基板302;形成於基板302上的複數個反射電極31;形成於複數個反射電極31的每一者之有機EL等發光元件32;以及連接於反射電極31的主動元件。在陣列基板301上,主動元件配列成矩陣狀,圖4中則加以省略。 The black matrix substrate 300 is different from the black matrix substrate 150 shown in FIGS. 1 and 2 in that no semi-transmissive film is formed on the transparent substrate 310 and has a structure in which a black matrix layer 30 is formed on the transparent substrate 310 . The array substrate 301 includes: a substrate 302 ; a plurality of reflective electrodes 31 formed on the substrate 302 ; a light-emitting element 32 such as an organic EL formed on each of the plurality of reflective electrodes 31 ; and an active element connected to the reflective electrodes 31 . Active elements are arranged in a matrix on the array substrate 301 , which is omitted in FIG. 4 .

在參照圖3及圖4之以下的說明中,反射電極121、31之光的反射率設為100%,大概以從反射電極121、31產生平行光為前提(未考慮擴散光的產生)。又,圖3及圖4中均說明未使用偏光板的構成,說明未包含透明基板表面的反射成分之情況。為了說明反射光,簡化了偏光板等的構件。 In the following description referring to FIG. 3 and FIG. 4 , the light reflectance of the reflective electrodes 121 and 31 is set to 100%, presumably on the premise that parallel light is generated from the reflective electrodes 121 and 31 (the generation of diffused light is not considered). 3 and 4 both illustrate the configuration without using a polarizing plate, and describe the case where the reflection component on the surface of the transparent substrate is not included. In order to illustrate reflected light, components such as polarizers are simplified.

又,以下說明的透射率,在以玻璃等透明基板為基準(reference)時係使用顯微分光測定器之可視光(400nm~700nm)的透射率。 In addition, the transmittance described below is the transmittance of visible light (400nm~700nm) using a microspectrometer when a transparent substrate such as glass is used as a reference (reference).

圖3中,外部光IL1、IL2從顯示裝置250的上面射入(圖1的符號OB所示的方向)。例如,當半透射膜10的光透射率為70%時,通過畫素開口部205之外部光IL1的光量係藉由半透射膜10而減少,成為70%的光量而到達反射電極121。此光係藉反射電極121反射, 而產生反射光RL1,反射光RL1係透射半透射膜10。透射半透射膜10之反射光RL2的光量,相對於外部光IL1的光量(100%)成為49%,藉由半透射膜10可抑制反射光。 In FIG. 3 , external lights IL1 and IL2 are incident from the upper surface of the display device 250 (in the direction shown by symbol OB in FIG. 1 ). For example, when the light transmittance of the semi-transmissive film 10 is 70%, the amount of external light IL1 passing through the pixel opening 205 is reduced by the semi-transmissive film 10 , and reaches the reflective electrode 121 at 70%. This light is reflected by the reflective electrode 121, The reflected light RL1 is generated, and the reflected light RL1 is transmitted through the semi-transmissive film 10 . The light quantity of the reflected light RL2 transmitted through the semi-transmissive film 10 becomes 49% with respect to the light quantity (100%) of the external light IL1, and the reflected light can be suppressed by the semi-transmissive film 10 .

藉由設定半透射膜10的透射率,可抑制反射光的光量,而得到目的之視認性。亦可依據發光元件122的發光強度,來調整半透射膜10的透射率。此外,雖圖3中並未顯示出,但在相對於透明基板102的外面102T呈斜向的方向從顯示裝置250的外部射入內部的光,係在第1黑色矩陣層11及第2黑色矩陣層12的積層構成被截斷(cut)。因此,可得到比上述之再反射光的抑制更優異的效果,可大幅提升視認性。 By setting the transmittance of the semi-transmissive film 10, the amount of reflected light can be suppressed to obtain the desired visibility. The transmittance of the semi-transmissive film 10 can also be adjusted according to the luminous intensity of the light emitting element 122 . In addition, although not shown in FIG. 3 , the light that enters the inside from the outside of the display device 250 in a direction oblique to the outer surface 102T of the transparent substrate 102 is reflected in the first black matrix layer 11 and the second black matrix layer 11 . The laminate configuration of the matrix layer 12 is cut. Therefore, an effect more excellent than the above-mentioned suppression of re-reflected light can be obtained, and visibility can be greatly improved.

相對於此,在具備圖4所示之習知的黑色矩陣基板300之顯示裝置350中,未形成有半透射膜,故通過畫素開口部305的外部光IL3係在光量沒有減少的情況下到達反射電極31,藉反射電極31原樣地反射,同樣不會有光量減少,而產生具有100%的光量之反射光RL3。 In contrast, in the display device 350 provided with the conventional black matrix substrate 300 shown in FIG. 4 , no semi-transmissive film is formed, so the external light IL3 passing through the pixel opening 305 is not reduced in light quantity. When it reaches the reflective electrode 31, it is reflected by the reflective electrode 31 as it is, and the reflected light RL3 having a light quantity of 100% is generated without reducing the quantity of light.

又,射入圖3所示的第1黑色矩陣層11之外部光IL2係以往復於第1黑色矩陣層11上的半透射膜10之方式透射,光被吸收。藉此,例如可將反射率抑制為1%以下。 Moreover, external light IL2 incident on the first black matrix layer 11 shown in FIG. 3 is transmitted so as to reciprocate the semi-transmissive film 10 on the first black matrix layer 11, and the light is absorbed. Thereby, for example, the reflectance can be suppressed to 1% or less.

相對地,在未形成有圖4所示的半透射膜之黑色矩陣基板300的情況,黑色矩陣層30與透明基板310之界面的反射率通常為3%左右。在具備圖3所示之半透射膜10的構成中,第1黑色矩陣層11與透明基板310的界面之反射率為以往的1/3以下。 In contrast, in the case of the black matrix substrate 300 without the semi-transmissive film shown in FIG. 4 , the reflectance at the interface between the black matrix layer 30 and the transparent substrate 310 is usually about 3%. In the configuration including the semi-transmissive film 10 shown in FIG. 3 , the reflectance at the interface between the first black matrix layer 11 and the transparent substrate 310 is 1/3 or less of the conventional one.

(藉由本實施形態的黑色矩陣基板獲得的效果2) (Effect 2 obtained by the black matrix substrate of this embodiment)

圖5係局部地表示具備本發明第1實施形態之黑色矩陣基板150的顯示裝置250之剖面圖,且為藉由本發明的實施形態所得到之一個效果的說明圖。圖5所示的顯示裝置250係對應於圖3,故省略顯示裝置250的構造之說明。 5 is a partial cross-sectional view of a display device 250 including a black matrix substrate 150 according to the first embodiment of the present invention, and is an explanatory view of an effect obtained by the embodiment of the present invention. The display device 250 shown in FIG. 5 corresponds to FIG. 3 , so the description of the structure of the display device 250 is omitted.

圖6為局部地顯示具備習知的黑色矩陣基板300之顯示裝置350的剖面圖,為將圖5所示的黑色矩陣基板與習知的黑色矩陣基板作比較說明的圖。圖6所示的顯示裝置350係與圖4對應,故省略顯示裝置350之構造的說明。 FIG. 6 is a partial cross-sectional view of a display device 350 including a conventional black matrix substrate 300 , and is a diagram comparing the black matrix substrate shown in FIG. 5 with a conventional black matrix substrate. The display device 350 shown in FIG. 6 corresponds to FIG. 4 , so the description of the structure of the display device 350 is omitted.

圖5及圖6係在發光元件122、32發光的情況下,說明光對鄰接畫素的影響之說明圖。 5 and 6 are explanatory diagrams illustrating the influence of light on adjacent pixels when the light emitting elements 122 and 32 emit light.

圖5及圖6中,發光元件122、32,係將微型LED(LED發光元件)、有機EL元件、或者作為背光的Mini LED簡化並圖示之元件。 In FIG. 5 and FIG. 6 , the light emitting elements 122 and 32 are simplified and illustrated elements of micro LEDs (LED light emitting elements), organic EL elements, or Mini LEDs used as backlights.

圖5中從發光元件122射出的射出光係以符號E10、E11、E12、E13、E14表示。圖6中,從發光元件32射出的射出光係以符號E20、E21、E22、E23、E24表示。 In FIG. 5 , the emitted lights emitted from the light emitting element 122 are represented by symbols E10 , E11 , E12 , E13 , and E14 . In FIG. 6 , the light emitted from the light emitting element 32 is represented by symbols E20, E21, E22, E23, and E24.

圖5中以符號E10、E11、E13表示的射出光,不會對鄰接畫素造成影響,通過畫素開口部205,朝顯示裝置250的外部正當地射出,發揮顯示的作用。 The emitted light indicated by symbols E10 , E11 , and E13 in FIG. 5 does not affect adjacent pixels, but passes through the pixel opening 205 and is properly emitted to the outside of the display device 250 to play a display role.

同樣地,圖6中以符號E20、E21、E23表示的射出光,不會對鄰接畫素造成影響,通過畫素開口部305,朝顯示裝置350的外部正當地射出,發揮顯示的作用 Similarly, the emitted light represented by symbols E20, E21, and E23 in FIG. 6 does not affect adjacent pixels, but passes through the pixel opening 305, and is properly emitted to the outside of the display device 350 to play a display role.

光在相對於透明基板102的外面102T呈斜向的方向從顯示裝置250的外部射入內部時,在光的入射時及光的反射時兩者的情況中,藉由圖5所示的第2黑色矩陣層12可得到再反射抑制的效果。即便在半透射膜10的透射率高達55%以上時,可以在計算值以上獲得反射光抑制之效果。 When light enters the inside of the display device 250 from the outside in an oblique direction with respect to the outer surface 102T of the transparent substrate 102, in the case of both the incident light and the light reflection, the first display shown in FIG. 2. The black matrix layer 12 can obtain the effect of suppressing re-reflection. Even when the transmittance of the semi-transmissive film 10 is as high as 55% or more, the effect of suppressing reflected light can be obtained above the calculated value.

圖6中雖未圖示,但可理解:若假定例如使用液晶層作為顯示功能層,且發光元件32是背光所具備之Mini LED(次毫米發光二極體),則由發光元件32產生的射出光E22、E24係以雜散光的形式進入鄰接畫素,顯示對比會降低。 Although not shown in FIG. 6 , it can be understood that if it is assumed that, for example, a liquid crystal layer is used as a display function layer, and the light emitting element 32 is a Mini LED (submillimeter light emitting diode) provided in the backlight, then the light generated by the light emitting element 32 The emitted light E22 and E24 enter adjacent pixels in the form of stray light, which reduces the display contrast.

可理解到:即便圖6所示之發光元件32為微型LED或有機EL發光層時,由於係使用習知的黑色矩陣基板300,故同樣地,產生自發光元件32的射出光E22、E24係以雜散光的形式進入鄰接畫素,顯示對比會降低。 It can be understood that even if the light-emitting element 32 shown in FIG. 6 is a micro-LED or an organic EL light-emitting layer, since the conventional black matrix substrate 300 is used, the emitted light E22 and E24 generated from the light-emitting element 32 are similarly Entering adjacent pixels in the form of stray light, the display contrast will be reduced.

相對地,可理解到:在具備圖5所示之本發明第1實施形態的黑色矩陣基板150之顯示裝置250中,第2黑色矩陣層12將射出光E12、E14(雜散光)截斷(cut),雜散光不會對鄰接畫素造成影響。 In contrast, it can be understood that in the display device 250 provided with the black matrix substrate 150 of the first embodiment of the present invention shown in FIG. ), stray light will not affect adjacent pixels.

(變形例1) (Modification 1)

圖7係局部地顯示本發明實施形態的黑色矩陣基板的變形例1之剖面圖。在半透射膜10使用有未添加光學上等向的微粒子13之半透射膜這點上,圖7所示的黑色矩陣基板550係與圖1所示的黑色矩陣基板150不同。 Fig. 7 is a cross-sectional view partially showing Modification 1 of the black matrix substrate according to the embodiment of the present invention. The black matrix substrate 550 shown in FIG. 7 is different from the black matrix substrate 150 shown in FIG. 1 in that the semi-transmissive film 10 uses a semi-transmissive film to which no optically isotropic fine particles 13 are added.

根據此種黑色矩陣基板550,不僅無法得到與上述第1實施形態相同的效果,由於在半透射膜10未添加微粒子13,故半透射膜10的構造是簡單的,有助於黑色矩陣基板的成本降低。 According to such a black matrix substrate 550, not only the same effect as that of the above-mentioned first embodiment cannot be obtained, but also because the microparticles 13 are not added to the semi-transmissive film 10, the structure of the semi-transmissive film 10 is simple, which contributes to the stability of the black matrix substrate. Reduce costs.

(變形例2) (Modification 2)

圖8係局部地顯示本發明實施形態之黑色矩陣基板的變形例2之剖面圖。在設置有紅色層R、綠色層G及藍色層B之著色層這點,圖8所示的黑色矩陣基板650係與圖1所示的黑色矩陣基板150不同。 Fig. 8 is a cross-sectional view partially showing Modification 2 of the black matrix substrate according to the embodiment of the present invention. The black matrix substrate 650 shown in FIG. 8 is different from the black matrix substrate 150 shown in FIG. 1 in that the colored layers of the red layer R, the green layer G, and the blue layer B are provided.

第1黑色矩陣層11之複數個第1畫素開口部11S的每一者係具有著色層CF。著色層CF係由紅色層R、綠色層G及藍色層B所構成。以與三個第1畫素開口部11S對應的方式,紅色層R、綠色層G及藍色層B設置於第1畫素開口部11S。 Each of the plurality of first pixel openings 11S of the first black matrix layer 11 has a colored layer CF. The colored layer CF is composed of a red layer R, a green layer G and a blue layer B. The red layer R, the green layer G, and the blue layer B are provided in the first pixel opening 11S so as to correspond to the three first pixel openings 11S.

尤其,紅色層R、綠色層G及藍色層B係在第1透明樹脂層21與半透射膜10之間,設置於第1黑色矩陣層11的第1畫素開口部11S。亦即,黑色矩陣基板650係為加上有著色層CF的黑色矩陣基板(彩色濾光片基板)。 In particular, the red layer R, the green layer G, and the blue layer B are provided in the first pixel opening 11S of the first black matrix layer 11 between the first transparent resin layer 21 and the semi-transmissive film 10 . That is, the black matrix substrate 650 is a black matrix substrate (color filter substrate) on which a colored layer CF is added.

根據此種黑色矩陣基板650,不僅可獲得與上述第1實施形態同樣的效果,也可實現具有作為彩色濾光片基板的功能之黑色矩陣基板。 According to such a black matrix substrate 650, not only the same effect as that of the above-mentioned first embodiment can be obtained, but also a black matrix substrate having a function as a color filter substrate can be realized.

(顯示裝置) (display device)

作為構成適用上述的第1實施形態、變形例1及變形例2的黑色矩陣基板150、550、650之顯示裝置的顯示功能層,係可選擇自液晶層、有機EL元件及微型LED元件。顯示功能層係以由在陣列基板上配列成矩陣狀之稱為TFT的複數個薄膜電晶體(主動元件)驅動。 The display function layer constituting the display device to which the black matrix substrates 150, 550, 650 of the first embodiment, modification 1, and modification 2 described above can be selected from a liquid crystal layer, an organic EL element, and a micro LED element. The display function layer is driven by a plurality of thin film transistors (active elements) called TFTs arranged in a matrix on the array substrate.

以下,說明關於本發明實施形態的顯示裝置,惟省略了薄膜電晶體的圖示。又,與第1實施形態、變形例1及變形例2相同的構件係標註相同符號,其說明則省略或簡化。 Hereinafter, the display device according to the embodiment of the present invention will be described, but the illustration of the thin film transistor will be omitted. In addition, the same members as those of the first embodiment, modification 1, and modification 2 are denoted by the same reference numerals, and description thereof will be omitted or simplified.

(第2實施形態) (Second Embodiment) (微型LED顯示裝置) (Micro LED display device)

圖9係表示本發明第2實施形態的顯示裝置之圖,為局部地顯示適用了第1實施形態的變形例1之黑色矩陣基板550的微型LED顯示裝置750之剖面圖。 9 is a view showing a display device according to a second embodiment of the present invention, and is a partial cross-sectional view of a micro LED display device 750 to which a black matrix substrate 550 according to Modification 1 of the first embodiment is applied.

圖10係局部地顯示第2實施形態的微型LED顯示裝置750所具備之陣列基板501的放大圖,為表示薄膜電晶體68的位置之圖。 FIG. 10 is an enlarged view partially showing the array substrate 501 included in the micro LED display device 750 according to the second embodiment, and is a diagram showing the position of the thin film transistor 68 .

在陣列基板501的表面43上形成有第4絕緣層47。在第4絕緣層47上,依序積層有:以覆蓋薄 膜電晶體68、第4絕緣層47及薄膜電晶體68的方式形成的第3絕緣層148;以與薄膜電晶體68的通道層58對向之方式形成於第3絕緣層148上的閘極電極55;以覆蓋第3絕緣層148及閘極電極55的方式形成的第6絕緣層49;及以覆蓋第6絕緣層49的方式形成的第1平坦化層96。 A fourth insulating layer 47 is formed on the surface 43 of the array substrate 501 . On the 4th insulating layer 47, laminated in sequence: to cover the thin The third insulating layer 148 formed by means of the film transistor 68, the fourth insulating layer 47, and the thin film transistor 68; the gate electrode formed on the third insulating layer 148 in a manner facing the channel layer 58 of the thin film transistor 68 electrode 55 ; sixth insulating layer 49 formed to cover third insulating layer 148 and gate electrode 55 ; and first planarization layer 96 formed to cover sixth insulating layer 49 .

在第1平坦化層96、第6絕緣層49及第3絕緣層148上,於與薄膜電晶體68的汲極電極56對應的位置形成有接觸孔93。又,在第1平坦化層96上,於與通道層58對應的位置形成有堤壩(bank)94(參照圖10)。在剖面視圖中於彼此相鄰之堤壩94間的區域,即在平面視圖中被堤壩94所包圍的區域,以覆蓋第1平坦化層96的上面、接觸孔93的內部及汲極電極56之方式形成有反射電極89(畫素電極)。此外,反射電極89亦可不形成於堤壩94的上面。反射電極89係隔介導電性的接合層77而與發光元件CHIP的下部電極88電性連接。 On the first planarizing layer 96 , the sixth insulating layer 49 and the third insulating layer 148 , a contact hole 93 is formed at a position corresponding to the drain electrode 56 of the thin film transistor 68 . Also, on the first planarization layer 96 , a bank 94 is formed at a position corresponding to the channel layer 58 (see FIG. 10 ). The area between the banks 94 adjacent to each other in the cross-sectional view, that is, the area surrounded by the banks 94 in the plan view, covers the top of the first planarization layer 96, the inside of the contact hole 93, and the drain electrode 56. A reflective electrode 89 (pixel electrode) is formed in this manner. In addition, the reflective electrode 89 may not be formed on the upper surface of the bank 94 . The reflective electrode 89 is electrically connected to the lower electrode 88 of the light emitting element CHIP via the conductive bonding layer 77 .

以埋設接觸孔93的內部之方式,且以覆蓋反射電極89及發光元件CHIP的方式形成有第2平坦化層95。在第2平坦化層95上形成有稱為ITO(Indium Tin Oxide)的透明導電膜76,在透明導電膜76連接有構成發光元件CHIP的上部電極87。再者,在透明導電膜76上形成有輔助導體75,透明導電膜76係與輔助導體75電性連接。又,在透明導電膜76的表面,以覆蓋輔助導體75的方式形成有密封層109(接著層)。輔助導體75在平面視圖中係用以使透明導電膜76的電阻值減少的導體。 The second planarization layer 95 is formed so as to bury the inside of the contact hole 93 and to cover the reflective electrode 89 and the light emitting element CHIP. A transparent conductive film 76 called ITO (Indium Tin Oxide) is formed on the second planarization layer 95 , and an upper electrode 87 constituting the light emitting element CHIP is connected to the transparent conductive film 76 . Furthermore, an auxiliary conductor 75 is formed on the transparent conductive film 76 , and the transparent conductive film 76 is electrically connected to the auxiliary conductor 75 . Furthermore, a sealing layer 109 (adhesive layer) is formed on the surface of the transparent conductive film 76 so as to cover the auxiliary conductor 75 . The auxiliary conductor 75 is a conductor for reducing the resistance value of the transparent conductive film 76 in plan view.

作為堤壩94的材料,係可使用丙烯酸樹脂、聚醯亞胺樹脂、酚醛清漆酚樹脂等的有機樹脂。在堤壩94,亦可進一步積層氧化矽、氮氧化矽等的無機材料。 As a material of the bank 94, organic resins such as acrylic resins, polyimide resins, and novolak resins can be used. In the embankment 94, inorganic materials such as silicon oxide and silicon oxynitride may be further laminated.

作為第1平坦化層96及第2平坦化層95的材料,亦可使用丙烯酸樹脂、聚醯亞胺樹脂、苯環丁烯樹脂、聚醯胺樹脂等。也可使用低介電率材料(low-k材料)。 As materials for the first planarization layer 96 and the second planarization layer 95 , acrylic resin, polyimide resin, benzocyclobutene resin, polyamide resin, and the like can also be used. Low dielectric constant materials (low-k materials) may also be used.

發光元件CHIP係具有上部電極87、n型半導體層90、發光層92、p型半導體層91及下部電極88依序積層而成的構造。換言之,發光元件CHIP係具有在下部電極88上依序積層p型半導體層91、發光層92、n型半導體層90及上部電極87而成的構成。如圖10所示,使用於LED發光的電極係形成於不同的面,且形成於彼此對向的面。又,在與以成為彼此平行的方式積層的n型半導體層90及p型半導體層91之每一者對向之面的外側,配置有上部電極87及下部電極88。具有此種構造的發光元件CHIP在本實施形態中稱為垂直型發光二極體。在剖面視圖中,LED構造為角錐形狀等異型時,不含於本發明的垂直型發光二極體。在LED構造中,以電極排列於單側的面之方式形成的構造、或者以電極排列於水平方向的方式形成的構造,係稱為水平型發光二極體。 The light-emitting element CHIP has a structure in which an upper electrode 87 , an n-type semiconductor layer 90 , a light-emitting layer 92 , a p-type semiconductor layer 91 , and a lower electrode 88 are sequentially laminated. In other words, the light-emitting element CHIP has a configuration in which p-type semiconductor layer 91 , light-emitting layer 92 , n-type semiconductor layer 90 , and upper electrode 87 are sequentially stacked on lower electrode 88 . As shown in FIG. 10 , the electrodes for the LED to emit light are formed on different surfaces, and are formed on surfaces facing each other. In addition, the upper electrode 87 and the lower electrode 88 are arranged outside the surface facing each of the n-type semiconductor layer 90 and the p-type semiconductor layer 91 stacked in parallel to each other. The light emitting element CHIP having such a structure is called a vertical light emitting diode in this embodiment. In the cross-sectional view, when the LED structure is irregular such as a pyramid shape, it is not included in the vertical light-emitting diode of the present invention. Among LED structures, a structure in which electrodes are arranged on one side or a structure in which electrodes are arranged in a horizontal direction is called a horizontal light emitting diode.

為了進行彩色顯示,可使用紅色發光、綠色發光、藍色發光的LED元件(微型LED)作為發光元件 CHIP。此種LED發光,由於紅色、綠色及藍色的色純度極高,所以可省去彩色濾光片。或者,亦可使用發出藍色至近紫外的波長區域的光之1種LED元件的矩陣。此時,可使用將自LED元件發出之藍色至近紫外的波長區域的光,波長轉換成可視區域之紅色、綠色及藍色之3種量子點的層,來進行彩色顯示。 For color display, LED elements (miniature LEDs) that emit red, green, or blue light can be used as light-emitting elements CHIP. This kind of LED emits light, because the color purity of red, green and blue is extremely high, so color filters can be omitted. Alternatively, a matrix of one type of LED element emitting light in a wavelength range from blue to near ultraviolet may also be used. In this case, color display can be performed using a layer of three types of quantum dots that convert the wavelength of light emitted from the LED element in the blue to near-ultraviolet wavelength range into red, green, and blue in the visible range.

發光元件CHIP的形狀,例如在平面視圖中可適用1邊的長度為2μm~50μm的正方形形狀。惟,亦可適用正方形或矩形以外的形狀。或者,亦可將1邊的大小設為50μm以上。又,在平面視圖中,可分別在畫素安裝1個或2個以上的發光元件且可賦予冗餘度(redundancy)。在發光元件CHIP的安裝中,例如可使正方形形狀之發光元件CHIP的朝向以90度的單位隨機(random)旋轉來安裝。藉由隨機安裝,可減輕由LED結晶成長之些微的偏差所產生之畫面全體的色斑、亮度不均。 The shape of the light-emitting element CHIP is, for example, a square shape with a side length of 2 μm to 50 μm in plan view. However, shapes other than square or rectangle are also applicable. Alternatively, the size of one side may be set to 50 μm or more. In addition, in a plan view, one or two or more light-emitting elements can be mounted on each pixel, and redundancy can be provided. In mounting the light-emitting element CHIP, for example, the orientation of the square-shaped light-emitting element CHIP can be randomly rotated in units of 90 degrees and mounted. By random installation, it can reduce the color spot and brightness unevenness of the whole screen caused by the slight deviation of LED crystal growth.

接合層77係在例如150℃至340℃的溫度範圍內,使發光元件CHIP的下部電極88與反射電極89熔接,可適用能夠進行電性連接之導電性材料。在此導電性材料,亦可使銀、碳、石墨等的導電性骨材(conductive filler)分散於熱流動性樹脂。或者,可將接合層77,使用In(銦)、InBi合金、InSb合金、InSn合金、InAg合金、InGa合金、SnBi合金、SnSb合金等、或者為此等金屬的3元系、4元系之低熔點金屬來形成。或者,亦可僅在如異方性導電膜的厚度方向使用具有電性導通的材料。 The bonding layer 77 is used to weld the lower electrode 88 and the reflective electrode 89 of the light-emitting element CHIP within a temperature range of, for example, 150°C to 340°C, and a conductive material capable of electrical connection can be used. Here, as the conductive material, conductive fillers such as silver, carbon, graphite, etc. may be dispersed in a thermally fluid resin. Alternatively, In (indium), InBi alloy, InSb alloy, InSn alloy, InAg alloy, InGa alloy, SnBi alloy, SnSb alloy, etc., or a ternary or quaternary system of these metals may be used for the bonding layer 77. low melting point metals. Alternatively, a material having electrical conductivity may be used only in the thickness direction of the anisotropic conductive film.

(第3實施形態) (third embodiment) (有機EL顯示裝置) (Organic EL display device)

圖11係表示本發明的第3實施形態之顯示裝置的圖,為局部地表示適用第1實施形態的變形例2之黑色矩陣基板650的有機EL顯示裝置850之剖面圖。 11 is a view showing a display device according to a third embodiment of the present invention, and is a cross-sectional view partially showing an organic EL display device 850 to which a black matrix substrate 650 according to Modification 2 of the first embodiment is applied.

有機EL顯示裝置850係將黑色矩陣基板650與具備有機EL層80的陣列基板801以面對面的方式貼合而構成。有機EL層80係藍色發光的有機電致發光的發光層。黑色矩陣基板650具備有紅色轉換層CR、綠色轉換層CG、及藍色轉換層CB等的色轉換層。色轉換層係將藍色發光(亦可含有近紫外區域)轉換成比此發光波長更長波長的光,例如紅色、綠色及藍色的光之轉換層。色轉換層的材料係可提示無機螢光體、螢光染料、量子點等。 The organic EL display device 850 is constructed by bonding the black matrix substrate 650 and the array substrate 801 including the organic EL layer 80 face to face. The organic EL layer 80 is an organic electroluminescent light-emitting layer that emits blue light. The black matrix substrate 650 includes color conversion layers such as a red conversion layer CR, a green conversion layer CG, and a blue conversion layer CB. The color conversion layer is a conversion layer that converts blue luminescence (may also include near-ultraviolet region) into light with a longer wavelength than this luminescence wavelength, such as red, green and blue light. The material system of the color conversion layer may suggest inorganic phosphors, fluorescent dyes, quantum dots and the like.

亦可在色轉換層(紅色轉換層CR、綠色轉換層CG及藍色轉換層CB)與半透射膜10之間插入彩色濾光片。在色轉換層中,亦可採用省去藍色轉換層CB的構成。此外,在發光色的色純度改善進展中的有機EL顯示裝置中,可作成除去色轉換層,且配設紅色、綠色及藍色等的彩色濾光片之構成。 A color filter may also be inserted between the color conversion layers (the red conversion layer CR, the green conversion layer CG, and the blue conversion layer CB) and the semi-transmissive film 10 . In the color conversion layer, a configuration in which the blue conversion layer CB is omitted may also be employed. In addition, in an organic EL display device in which the color purity of luminescent colors is being improved, it is possible to remove the color conversion layer and arrange color filters such as red, green, and blue.

其次,說明關於有機EL顯示裝置850的構造。 Next, the structure of the organic EL display device 850 will be described.

作為陣列基板801的基板802,不需限定為透明基板,例如,作為可適用的基板,可舉出玻璃基板、陶瓷 基板、石英基板、藍寶石基板、矽、碳化矽或矽鍺等的半導體基板、或者塑膠基板等。 As the substrate 802 of the array substrate 801, it is not necessary to be limited to a transparent substrate. For example, as an applicable substrate, a glass substrate, a ceramic substrate, etc. Substrates, quartz substrates, sapphire substrates, semiconductor substrates such as silicon, silicon carbide or silicon germanium, or plastic substrates.

在陣列基板801的基板802上,形成有第4絕緣層47。在第4絕緣層47上,依序積層有薄膜電晶體(未圖示)、以覆蓋第4絕緣層47及薄膜電晶體的方式所形成的第5絕緣層248、以薄膜電晶體的通道層對向之方式形成於第5絕緣層248上之閘極電極、以覆蓋第5絕緣層248及閘極電極的方式形成的第6絕緣層49、及形成於第6絕緣層49上的第1平坦化層96。 The fourth insulating layer 47 is formed on the substrate 802 of the array substrate 801 . On the fourth insulating layer 47, a thin film transistor (not shown), a fifth insulating layer 248 formed to cover the fourth insulating layer 47 and the thin film transistor, and a channel layer of the thin film transistor are stacked sequentially. The gate electrode formed on the fifth insulating layer 248 in a facing manner, the sixth insulating layer 49 formed to cover the fifth insulating layer 248 and the gate electrode, and the first insulating layer formed on the sixth insulating layer 49 planarization layer 96 .

此外,作為形成於基板802上的薄膜電晶體,亦可採用具有如圖10所示的構造之薄膜電晶體68。 In addition, as the thin film transistor formed on the substrate 802, the thin film transistor 68 having the structure shown in FIG. 10 can also be used.

在第1平坦化層96、第6絕緣層49及第5絕緣層248,在與薄膜電晶體的汲極電極對應之位置形成有接觸孔。又,在第1平坦化層96上,於與通道層對應的位置形成有堤壩94。在剖面視圖中於彼此相鄰的堤壩94間的區域,即在平面視圖中被堤壩94所包圍的區域中,以覆蓋第1平坦化層96的上面、接觸孔93的內部及汲極電極156之方式形成有下部電極189(畫素電極)。此外,下部電極189亦可不形成於堤壩94的上面。 In the first planarization layer 96 , the sixth insulating layer 49 and the fifth insulating layer 248 , contact holes are formed at positions corresponding to the drain electrodes of the thin film transistors. Also, on the first planarization layer 96 , banks 94 are formed at positions corresponding to the channel layer. In the area between the banks 94 adjacent to each other in the cross-sectional view, that is, in the area surrounded by the banks 94 in the plan view, to cover the upper surface of the first planarization layer 96, the inside of the contact hole 93 and the drain electrode 156 The lower electrode 189 (pixel electrode) is formed in such a manner. In addition, the lower electrode 189 may not be formed on the upper surface of the bank 94 .

更者,以覆蓋下部電極189、堤壩94及第1平坦化層96的方式形成有電洞注入層191。在電洞注入層191上依序積層有發光層192、上部電極187及密封層195。 Furthermore, the hole injection layer 191 is formed so as to cover the lower electrode 189 , the bank 94 and the first planarization layer 96 . On the hole injection layer 191, a light emitting layer 192, an upper electrode 187, and a sealing layer 195 are laminated in this order.

下部電極189(反射電極)係如後述,具有銀或銀合金層藉導電性氧化物層所夾持而成的構成。 The lower electrode 189 (reflective electrode) has a structure in which silver or silver alloy layers are sandwiched by conductive oxide layers as will be described later.

下部電極189亦可具有藉導電性金屬氧化物層夾持有銀合金層之3層積層構造。亦可採用將上述複合氧化物層適用於導電性金屬氧化物層,且將銀合金層的膜厚設定在例如100nm至250nm的範圍內或者300nm以上的膜厚,藉由導電性金屬氧化物層夾持有銀合金層之3層積層構造。於此情況,可實現對可視光具有高反射率的下部電極189。例如,亦可將銀合金層的膜厚設在例如9nm至15nm的範圍內,使用具有可視光透射性的3層積層膜作為上部電極。此外,導電性金屬氧化物係可舉出氧化銦或氧化鋅之複合氧化物。關於作為導電性氧化物具代表性的ITO(含氧化銦及氧化錫的混合氧化物),氧化物比銀合金層(或者銅合金層)具抗蝕性(noble)。因此,銀合金(或者銅合金層)會選擇性地被蝕刻,容易變成3層的線寬相異的構成。於是,亦可藉由在氧化銦,添加氧化鋅、氧化鎵、氧化銻等的易溶性氧化物來調整腐蝕電位,作成銀合金層(或者銅合金層)與腐蝕電位一致的混合氧化物層。以此等導電性金屬氧化物夾持銀等的3層積層膜,係可使用作為微型LED或液晶顯示裝置的電極或導電配線。 The lower electrode 189 may also have a three-layer laminate structure in which a silver alloy layer is sandwiched between conductive metal oxide layers. It is also possible to apply the above-mentioned composite oxide layer to the conductive metal oxide layer, and set the film thickness of the silver alloy layer, for example, within the range of 100nm to 250nm or a film thickness of 300nm or more. 3-layer laminate structure sandwiching silver alloy layers. In this case, the lower electrode 189 having a high reflectance to visible light can be realized. For example, it is also possible to set the film thickness of the silver alloy layer within a range of, for example, 9 nm to 15 nm, and use a three-layer laminate film having visible light transmittance as the upper electrode. Moreover, the composite oxide of indium oxide or zinc oxide is mentioned as an electroconductive metal oxide system. Regarding ITO (a mixed oxide containing indium oxide and tin oxide), which is a representative conductive oxide, the oxide is more corrosion-resistant (noble) than the silver alloy layer (or copper alloy layer). Therefore, the silver alloy (or copper alloy layer) is selectively etched, and the three layers tend to have different line widths. Therefore, it is also possible to adjust the corrosion potential by adding soluble oxides such as zinc oxide, gallium oxide, and antimony oxide to indium oxide to form a silver alloy layer (or copper alloy layer) and a mixed oxide layer whose corrosion potential is consistent. A three-layer laminated film in which silver or the like is sandwiched between these conductive metal oxides can be used as electrodes or conductive wiring for micro LEDs or liquid crystal display devices.

作為堤壩94的材料,係可使用丙烯酸樹脂、聚醯亞胺樹脂、酚醛清漆酚樹脂等的有機樹脂。於堤壩94,亦可進一步積層氧化矽、氮氧化矽等的無機材料。 As a material of the bank 94, organic resins such as acrylic resins, polyimide resins, and novolak resins can be used. Inorganic materials such as silicon oxide and silicon oxynitride may be further deposited on the embankment 94 .

作為第1平坦化層96的材料,亦可使用丙烯酸樹脂、聚醯亞胺樹脂、苯環丁烯樹脂、聚醯胺樹脂等。也可使用低介電率材料(low-k材料)。 As the material of the first planarization layer 96, acrylic resin, polyimide resin, benzocyclobutene resin, polyamide resin, etc. can also be used. Low dielectric constant materials (low-k materials) may also be used.

(第4實施形態) (fourth embodiment) (液晶顯示裝置) (Liquid Crystal Display Device)

圖12係顯示本發明第4實施形態的顯示裝置之圖,為局部顯示適用了第1實施形態的變形例2之黑色矩陣基板650的液晶顯示裝置950之剖面圖。 12 is a view showing a display device according to a fourth embodiment of the present invention, and is a cross-sectional view of a liquid crystal display device 950 partially showing a black matrix substrate 650 according to Modification 2 of the first embodiment.

圖12中,省略了包含偏光板的光學膜或擴散板等的光控制元件、配向膜等的圖示。 In FIG. 12 , illustration of a light control element including an optical film of a polarizing plate, a diffusion plate, and the like, an alignment film, and the like is omitted.

液晶顯示裝置950具備:黑色矩陣基板650;陣列基板901;配置在與黑色矩陣基板650與陣列基板901之間的液晶層LC;蓋玻璃904;及背光單元903。在蓋玻璃904與黑色矩陣基板650之間,亦可加入觸控面板。 The liquid crystal display device 950 includes: a black matrix substrate 650 ; an array substrate 901 ; a liquid crystal layer LC arranged between the black matrix substrate 650 and the array substrate 901 ; a cover glass 904 ; and a backlight unit 903 . A touch panel can also be added between the cover glass 904 and the black matrix substrate 650 .

圖12中,背光單元903係將5μm至100μm尺寸的LED晶片配列成矩陣狀的直下型背光單元(以下,稱為BLU),稱為Mini LED。在Mini LED的方式中,通常係採用配合液晶顯示裝置950所顯示的影像,在顯示區域中使BLU的發光局部地降低,變成暗的發光或者高輝度地發光之類的區域調光的方法。此外,使用於Mini LED的LED晶片尺寸亦可為上述以外的尺寸。 In FIG. 12 , the backlight unit 903 is a direct-lit backlight unit (hereinafter referred to as BLU) in which LED chips with a size of 5 μm to 100 μm are arranged in a matrix, and is called Mini LED. In the Mini LED method, a local dimming method such as locally lowering the light emission of the BLU in the display area to dim light or high-intensity light in accordance with the image displayed on the liquid crystal display device 950 is generally adopted. In addition, the size of the LED chip used in the Mini LED can also be other than the above-mentioned size.

以往的液晶顯示裝置中,僅使用液晶層作為顯示功能層,控制來自顯示面的發光(亮度),進行圖像顯示。在以往的液晶顯示裝置中,在影像顯示的期間,背光係維持點亮狀態,所以容易產生來自液晶層的漏光。因此,即便是黑顯示的狀態,也不會成為完全的黑 顯示,有對比降低的缺點。在Mini LED的方式中,藉由所顯示之影像的內容,例如將顯示區域的發光局部地關閉(off),可得到完全的黑顯示。 In a conventional liquid crystal display device, only a liquid crystal layer is used as a display function layer, and light emission (brightness) from a display surface is controlled to display an image. In a conventional liquid crystal display device, the backlight system is kept on during image display, so light leakage from the liquid crystal layer tends to occur. Therefore, even in the state of black display, it will not become completely black. display, has the disadvantage of reduced contrast. In the Mini LED method, depending on the content of the displayed image, for example, by partially turning off the light in the display area, a complete black display can be obtained.

含有Mini LED之LED的發光效率係大幅優於有機EL。含有可得到完全的黑顯示之區域調光技術的Mini LED,有凌駕有機EL之可能性。 The luminous efficiency of LED containing Mini LED is much better than that of organic EL. Mini LED with local dimming technology for completely black display has the possibility of surpassing organic EL.

此外,作為使用於Mini LED之LED的晶片尺寸,係可舉出5μm至100μm的尺寸,惟在電子看板(signage)等大型的顯示裝置中,亦可使用比100μm大的LED晶片。 In addition, as the chip size of LEDs used in Mini LEDs, the size of 5 μm to 100 μm can be mentioned, but in large-scale display devices such as electronic signage, LED chips larger than 100 μm can also be used.

再者,作為取代使用紅色發光、綠色發光、藍色發光各自的LED晶片,亦可將利用白色發光的LED晶片所進行的Mini LED的BLU與彩色濾光片配合來使用。於此情況,BLU控制包含其BLU的配線在內是簡便的。 Furthermore, instead of using LED chips that emit red light, green light, and blue light, a BLU of Mini LED using a white light-emitting LED chip can be used in combination with a color filter. In this case, it is easy to control the BLU including the wiring of the BLU.

又,在適用將紅色發光、綠色發光、藍色發光分時依序進行之場序技術的液晶顯示裝置中,可省略彩色濾光片。 In addition, in a liquid crystal display device to which a field sequential technology is applied to emit red light, green light, and blue light in time-division sequentially, the color filter can be omitted.

上述實施形態的黑色矩陣基板或者具備此黑色矩陣基板的顯示裝置,係可進行各種應用。可適用上述實施形態之顯示裝置的電子機器,可列舉:行動電話、行動式遊戲機、行動資訊終端、個人電腦、電子書、視訊攝影機、數位相機、頭戴式顯示器、導航系統、音響再生裝置(汽車音響、數位聲訊播放機等)、複印機、傳真機、印表機、複合式印表機、自動販賣機、自動櫃員機(ATM)、個人認證設備、光通訊機器,IC卡等的電 子裝置等。上述各實施形態係可自由組合使用。搭載有本發明實施形態的黑色矩陣基板之電子裝置,較佳為進一步搭載天線來進行藉通信或非接觸的受電供電。 The black matrix substrate of the above embodiment or a display device including the black matrix substrate can be used in various applications. Examples of electronic equipment to which the display device of the above-mentioned embodiment is applicable include mobile phones, mobile game machines, mobile information terminals, personal computers, electronic books, video cameras, digital cameras, head-mounted displays, navigation systems, and audio reproduction devices. (Car stereos, digital audio players, etc.), copiers, facsimile machines, printers, multi-function printers, vending machines, automatic teller machines (ATMs), personal authentication equipment, optical communication equipment, IC cards, etc. sub-device etc. The various embodiments described above can be freely combined and used. It is preferable that an electronic device equipped with the black matrix substrate according to the embodiment of the present invention is further equipped with an antenna for receiving and feeding power by communication or non-contact.

說明本發明的較佳實施形態,已說明如上述,但應當理解此等形態乃係本發明的例示形態,不應考慮作為限定的形態。追加、省略、置換及其他的變更可在不脫離本發明的範圍內進行。因此,本發明不應被看作受前述的說明限定,而係受請求的範圍所限制。 Although the preferred embodiments of the present invention have been described as above, it should be understood that these embodiments are illustrative embodiments of the present invention and should not be considered as limited embodiments. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the present invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is only limited by the scope claimed.

Claims (9)

一種黑色矩陣基板,具備:透明基板;半透射膜,形成於前述透明基板上;第1黑色矩陣層,在前述半透射膜的厚度方向上,以與前述半透射膜接觸的方式形成於前述半透射膜上,且具備複數個第1開口部;透明樹脂層,以覆蓋前述第1黑色矩陣層之方式形成於前述半透射膜上;及第2黑色矩陣層,形成於前述透明樹脂層上,且具備複數個第2開口部;在從與形成有前述半透射膜之前述透明基板的面相反側的面觀看的平面視圖中,前述半透射膜係以覆蓋複數個前述第1開口部與前述第1黑色矩陣層的方式重疊,在平面視圖中,複數個前述第2開口部的位置係與複數個前述第1開口部的位置對應。 A black matrix substrate, comprising: a transparent substrate; a semi-transmissive film formed on the aforementioned transparent substrate; a first black matrix layer formed on the aforementioned semi-transmissive film in the thickness direction of the aforementioned semi-transmissive film on the transmissive film, and has a plurality of first openings; a transparent resin layer is formed on the aforementioned semi-transmissive film in a manner covering the aforementioned first black matrix layer; and a second black matrix layer is formed on the aforementioned transparent resin layer, And it is provided with a plurality of second openings; in a plan view viewed from the surface opposite to the surface of the aforementioned transparent substrate on which the aforementioned semi-transmissive film is formed, the aforementioned semi-transmissive film is to cover the plurality of aforementioned first openings and the aforementioned The first black matrix layers are overlapped in such a way that in a plan view, the positions of the plurality of the second openings correspond to the positions of the plurality of the first openings. 如請求項1之黑色矩陣基板,其中前述半透射膜係含有碳作為顏料,前述半透射膜對可視光的透射率係在98%至60%的範圍內。 The black matrix substrate of claim 1, wherein the semi-transmissive film contains carbon as a pigment, and the transmittance of the semi-transmissive film to visible light is in the range of 98% to 60%. 如請求項1之黑色矩陣基板,其中前述半透射膜係具有碳、光學上等向性的微粒子、與分散有前述碳及前述微粒子的樹脂之分散體。 The black matrix substrate according to claim 1, wherein the semi-transmissive film is a dispersion comprising carbon, optically isotropic microparticles, and a resin in which the carbon and the microparticles are dispersed. 如請求項3之黑色矩陣基板,其中前述微粒子為二氧化矽的微粒子。 The black matrix substrate as claimed in claim 3, wherein the aforementioned microparticles are silicon dioxide microparticles. 如請求項3或4之黑色矩陣基板,其中將含有前述樹脂、前述碳和前述微粒子的全部固體含量設為100質量%,前述碳的量係在0.5質量%至15質量%的範圍內,前述微粒子的量係在1質量%至30質量%的範圍內。 Such as the black matrix substrate of claim 3 or 4, wherein the total solid content containing the aforementioned resin, the aforementioned carbon, and the aforementioned fine particles is set to 100% by mass, the amount of the aforementioned carbon is in the range of 0.5% by mass to 15% by mass, and the aforementioned The amount of fine particles is in the range of 1% by mass to 30% by mass. 如請求項1之黑色矩陣基板,其中前述第2黑色矩陣層的線寬小於第1黑色矩陣層的線寬。 The black matrix substrate according to claim 1, wherein the line width of the second black matrix layer is smaller than the line width of the first black matrix layer. 如請求項1之黑色矩陣基板,其中前述第2黑色矩陣層係對近紅外區域具有光透射性。 The black matrix substrate according to claim 1, wherein the second black matrix layer is light-transmissive to the near-infrared region. 如請求項1之黑色矩陣基板,其中前述第1黑色矩陣層的複數個前述第1開口部的每一者係具有著色層。 The black matrix substrate according to claim 1, wherein each of the plurality of first openings of the first black matrix layer has a colored layer. 一種顯示裝置,其具備:如請求項1至8中任一項之黑色矩陣基板;顯示功能層;及具備複數個主動元件之陣列基板。 A display device comprising: the black matrix substrate according to any one of claims 1 to 8; a display function layer; and an array substrate with a plurality of active elements.
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