TWI787329B - 用於鈷的化學機械拋光方法 - Google Patents

用於鈷的化學機械拋光方法 Download PDF

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Publication number
TWI787329B
TWI787329B TW107129140A TW107129140A TWI787329B TW I787329 B TWI787329 B TW I787329B TW 107129140 A TW107129140 A TW 107129140A TW 107129140 A TW107129140 A TW 107129140A TW I787329 B TWI787329 B TW I787329B
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TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
weight
polishing composition
cobalt
Prior art date
Application number
TW107129140A
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English (en)
Chinese (zh)
Other versions
TW201915132A (zh
Inventor
穆拉利Ｇ 夕凡奈伊甘
紅雨 王
馬修 凡漢翰
Original Assignee
美商羅門哈斯電子材料Ｃｍｐ控股公司
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Publication of TW201915132A publication Critical patent/TW201915132A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
TW107129140A 2017-09-21 2018-08-21 用於鈷的化學機械拋光方法 TWI787329B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/710892 2017-09-21
US15/710,892 US10170335B1 (en) 2017-09-21 2017-09-21 Chemical mechanical polishing method for cobalt

Publications (2)

Publication Number Publication Date
TW201915132A TW201915132A (zh) 2019-04-16
TWI787329B true TWI787329B (zh) 2022-12-21

Family

ID=64739833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107129140A TWI787329B (zh) 2017-09-21 2018-08-21 用於鈷的化學機械拋光方法

Country Status (5)

Country Link
US (1) US10170335B1 (https=)
JP (1) JP7231362B2 (https=)
KR (1) KR102525310B1 (https=)
CN (1) CN109531282B (https=)
TW (1) TWI787329B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10947413B2 (en) * 2019-03-29 2021-03-16 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
CN113004801B (zh) * 2019-12-20 2024-03-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201631110A (zh) * 2014-12-22 2016-09-01 巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物於拋光包含鈷及／或鈷合金之基材的用途
TW201716525A (zh) * 2015-08-12 2017-05-16 巴斯夫歐洲公司 化學機械硏磨（ｃｍｐ）組成物用於硏磨含鈷基板之用途

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
KR100672941B1 (ko) * 2004-10-06 2007-01-24 삼성전자주식회사 구리 부식 억제 세정 용액 및 이를 이용하는 씨엠피 공정
US20090056231A1 (en) * 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2011003665A (ja) 2009-06-17 2011-01-06 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
CN102304327A (zh) 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
US20130186850A1 (en) 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
EP2682441A1 (en) 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US20140011362A1 (en) 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
SG11201506102TA (en) 2013-02-28 2015-09-29 Fujimi Inc Polishing slurry for cobalt removal
JP6156630B2 (ja) 2013-05-24 2017-07-05 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US10059860B2 (en) 2014-02-26 2018-08-28 Fujimi Incorporated Polishing composition
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
WO2016008896A1 (en) 2014-07-15 2016-01-21 Basf Se A chemical mechanical polishing (cmp) composition
US10217645B2 (en) 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US9735030B2 (en) 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
CN107075310B (zh) 2014-10-21 2019-04-02 嘉柏微电子材料股份公司 钴凹陷控制剂
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
US9688885B2 (en) 2014-10-21 2017-06-27 Cabot Microelectronics Corporation Cobalt polishing accelerators
TWI775722B (zh) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
CN104830235B (zh) 2015-04-29 2017-06-23 清华大学 用于钴阻挡层结构化学机械抛光的抛光液及其应用
US9528030B1 (en) 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201631110A (zh) * 2014-12-22 2016-09-01 巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物於拋光包含鈷及／或鈷合金之基材的用途
TW201716525A (zh) * 2015-08-12 2017-05-16 巴斯夫歐洲公司 化學機械硏磨（ｃｍｐ）組成物用於硏磨含鈷基板之用途

Also Published As

Publication number Publication date
KR20190033431A (ko) 2019-03-29
CN109531282A (zh) 2019-03-29
US10170335B1 (en) 2019-01-01
JP7231362B2 (ja) 2023-03-01
KR102525310B1 (ko) 2023-04-24
TW201915132A (zh) 2019-04-16
JP2019057710A (ja) 2019-04-11
CN109531282B (zh) 2024-01-05

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