TWI786773B - Inspection method and inspection equipment of flux distribution - Google Patents
Inspection method and inspection equipment of flux distribution Download PDFInfo
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本發明係關於一種檢測方法及檢測設備,更特別是關於一種在半導體封裝結構的製程上,用來使助焊劑分布狀況顯現的檢測方法及檢測設備。 The present invention relates to a detection method and detection equipment, more particularly to a detection method and detection equipment for displaying flux distribution in the semiconductor packaging structure manufacturing process.
助焊劑(Flux)是用來確保焊接過程順利進行的一種常用的輔助材料,也是各種電子元件被裝配至基板上的過程中所常用的輔助材料。助焊劑的作用可清除焊料和被焊母材表面的氧化物,使金屬表面可達到一定的清潔度,這也使得助焊劑具有提高焊接品質的功用,進而可影響到電子元件與基板間之電性連接的連接品質。 Flux (Flux) is a common auxiliary material used to ensure the smooth progress of the soldering process, and is also a commonly used auxiliary material in the process of assembling various electronic components on the substrate. The role of the flux can remove the oxides on the surface of the solder and the base metal to be welded, so that the metal surface can reach a certain degree of cleanliness, which also makes the flux have the function of improving the welding quality, which in turn can affect the electrical connection between the electronic component and the substrate. The connection quality of the sexual connection.
在半導體的製程中,具有晶片的半導體封裝結構上另具有分別耦接至晶片對應接點的複數凸點,這些凸點的區域需要被塗佈助焊劑,以於後續的焊接步驟中,可讓這些凸點被順利地焊接至基板上,完成接點之間的接合(bonding)。隨著半導體整體製程能力的逐漸提升,對於封裝精確度的要求也越趨嚴格,當助焊劑塗佈不正確時,就容易導致製程良率下降或對晶片造成不可逆之破壞性損傷。因此,助焊劑的塗佈情況需要被有效檢知。 In the semiconductor manufacturing process, the semiconductor package structure with the chip also has a plurality of bumps that are respectively coupled to the corresponding contacts of the chip. The areas of these bumps need to be coated with flux, so that in the subsequent soldering steps, the These bumps are successfully soldered to the substrate, completing the bonding between the contacts. With the gradual improvement of the overall semiconductor process capability, the requirements for packaging accuracy are becoming more and more stringent. When the flux is not applied correctly, it will easily lead to a decrease in the process yield or cause irreversible destructive damage to the chip. Therefore, the coating condition of the flux needs to be effectively detected.
本發明之一目的在於使助焊劑的分布情況被顯現。 It is an object of the present invention to enable the distribution of flux to be visualized.
本發明之另一目的在於提高助焊劑分布的識別度。 Another object of the present invention is to improve the recognition of flux distribution.
為達上述目的及其他目的,本發明提出一種助焊劑分布狀況的檢測方法,係用於顯現一檢測區內之至少一電子元件之表面的助焊劑,該至少一電子元件的表面定義有一凸點區及一非凸點區,該檢測方法包含:一凸點區取像步驟及一非凸點區取像步驟。該凸點區取像步驟係以一第一凸點區取像方式及一第二凸點區取像方式此二者之其一,進行該凸點區的取像,其中,當所塗佈之助焊劑的預定厚度係小於一厚度門檻值時,係進行該第一凸點區取像方式,該第一凸點區取像方式採用對該電子元件之載板的入射角為45~75度的一第一類型照射光照射該檢測區,以及以與該電子元件之載板的夾角為80~100度的取像角取得一第一影像,其中,當所塗佈之助焊劑的預定厚度係大於或等於該厚度門檻值時,係進行該第二凸點區取像方式,該第二凸點區取像方式採用對該電子元件之載板的入射角為80~90度的一第二類型照射光照射該檢測區,以及以與該電子元件之載板的夾角為60~70度的取像角取得一第二影像。該非凸點區取像步驟係以該第一類型照射光照射該檢測區,以及以與該電子元件之載板的夾角為80~100度的取像角取得一第三影像。其中,所取得的該第一影像或該第二影像係供該凸點區之助焊劑分布區域的判定,所取得的該第三影像係供該非凸點區之助焊劑分布區域的判定。 In order to achieve the above purpose and other purposes, the present invention proposes a detection method for flux distribution, which is used to display the flux on the surface of at least one electronic component in a detection area, and the surface of the at least one electronic component defines a bump area and a non-bump area, the detection method includes: a step of taking an image of the bump area and a step of taking an image of the non-bump area. The bump area imaging step is to use one of a first bump area imaging method and a second bump area imaging method to image the bump area, wherein when the coated When the predetermined thickness of the soldering flux is less than a thickness threshold value, the imaging method of the first bump area is carried out, and the imaging method of the first bump area adopts an incident angle of 45-75° to the carrier board of the electronic component. A first type of irradiating light of 100 degrees irradiates the detection region, and obtains a first image at an imaging angle of 80 to 100 degrees with the carrier board of the electronic component, wherein, when the predetermined amount of flux coated When the thickness is greater than or equal to the thickness threshold value, the second bump area imaging method is carried out, and the second bump area imaging method adopts an incident angle of 80 to 90 degrees to the carrier board of the electronic component. The second type of irradiating light irradiates the detection area, and obtains a second image at an imaging angle of 60-70 degrees with the carrier plate of the electronic component. The non-bump area imaging step is to irradiate the detection area with the first type of irradiating light, and acquire a third image at an imaging angle of 80-100 degrees with the electronic component carrier. Wherein, the obtained first image or the second image is used for determining the flux distribution area of the bump area, and the obtained third image is used for determining the flux distribution area of the non-bump area.
於本發明之一實施例中,該厚度門檻值可為1.8~10(μm)中的一值。 In an embodiment of the present invention, the thickness threshold may be one of 1.8-10 (μm).
根據本發明之一實施例,於該第一凸點區取像方式中所採用的該第一類型照射光的亮度係為第一亮度,於該非凸點區取像步驟中所採用的該第一類型照射光的亮度係為第二亮度,該第一亮度可小於該第二亮度。 According to an embodiment of the present invention, the brightness of the first type of irradiating light used in the imaging method of the first bump area is the first brightness, and the brightness of the first type of illumination light used in the imaging step of the non-bump area is The brightness of one type of irradiating light is the second brightness, and the first brightness may be smaller than the second brightness.
根據本發明之一實施例,該第三影像中包括該凸點區及該非凸點區的影像,在位於該檢測區邊緣的該非凸點區中,該第二亮度可被設定成用以使未塗佈助焊劑之區域在影像中所呈現出的像素灰階值介於150~254,其中,該第二亮度並可被設定成用以使該凸點區在影像中所呈現出的像素灰階值大於254。 According to an embodiment of the present invention, the third image includes images of the bump area and the non-bump area, and in the non-bump area located at the edge of the detection area, the second brightness can be set to enable The gray scale value of the pixel in the image without flux coating is between 150~254, wherein the second brightness can be set to make the pixel of the bump area appear in the image The grayscale value is greater than 254.
根據本發明之一實施例,在該第二凸點區取像方式中的該第二類型照射光可藉由圍繞在該檢測區外圍上方的一低角度光源模組來提供。該第二類型照射光可為一非環形光。該非環形光係指該低角度光源模組鄰近該檢測區的一側邊的一發光單元不對該檢測區提供照射,該檢測區的該側邊係相對於該第二影像的取像側。 According to an embodiment of the present invention, the second type of illumination light in the second bump area imaging mode can be provided by a low-angle light source module surrounding the periphery of the detection area. The second type of illumination light can be a non-ring light. The non-ring light means that a light-emitting unit on a side of the low-angle light source module adjacent to the detection area does not provide illumination to the detection area, and the side of the detection area is an imaging side opposite to the second image.
根據本發明之一實施例,可更包含一全區取像步驟,係以該第二類型照射光照射該檢測區,以及以與該電子元件之載板的夾角為80~100度的取像角取得一第四影像,其中該第四影像係基於供該電子元件的該凸點區及該非凸點區內是否存在異物的判定。 According to an embodiment of the present invention, it may further include a whole-area imaging step, which is to irradiate the detection area with the second type of irradiating light, and take an image at an angle of 80 to 100 degrees with the carrier plate of the electronic component. Obtaining a fourth image, wherein the fourth image is based on the determination of whether there is foreign matter in the bump area and the non-bump area of the electronic component.
根據本發明之一實施例,在該第一凸點區取像方式中及該非凸點區取像步驟中的該第一類型照射光可藉由圍繞在該檢測區上方的一圍繞式高角度光源模組來提供。該全區取像步驟中的該第二類型照射光可藉由圍繞在該檢測區上方的一圍繞式低角度光源模組來提供。該圍繞式高角度光源模組係高 於該圍繞式低角度光源模組,其中該檢測區係僅涵蓋一輸送道上之二個並列成一組的該二個電子元件。 According to an embodiment of the present invention, the first type of irradiating light in the imaging mode of the first bump area and the imaging step of the non-bump area can be illuminated by a surrounding high-angle beam surrounding the detection area. The light source module is provided. The second type of illumination light in the whole-area imaging step can be provided by a surrounding low-angle light source module surrounding the detection area. The surround-type high-angle light source module is high In the surrounding low-angle light source module, the detection area only covers the two electronic components arranged side by side on a conveying path.
根據本發明之一實施例,在該第一凸點區取像方式中的該第一類型照射光可藉由在該檢測區之兩相對側上方的一平行式高角度光源模組來提供。該全區取像步驟中的該第二類型照射光可藉由在該檢測區之兩相對側上方的一平行式低角度光源模組來提供。該平行式高角度光源模組係高於該平行式低角度光源模組,其中該檢測區係涵蓋一輸送道上之至少三個以上並列成一組的該至少三個電子元件。 According to an embodiment of the present invention, the first type of illumination light in the imaging mode of the first bump area can be provided by a parallel high-angle light source module above two opposite sides of the detection area. The second type of illumination light in the whole area imaging step can be provided by a parallel low-angle light source module above two opposite sides of the detection area. The parallel high-angle light source module is higher than the parallel low-angle light source module, wherein the detection area covers at least three or more electronic components arranged in a group on a conveying path.
根據本發明之一實施例,在該凸點區取像步驟中係採用該第一凸點區取像方式的條件下,可在進行該凸點區取像步驟、該非凸點區取像步驟及該全區取像步驟前,更包含一附加取像步驟。該附加取像步驟係以該第一類型照射光或該第二類型照射光照射該檢測區,以及以與該電子元件之載板的夾角為80~100度的取像角取得一第五影像。該第五影像用於供該檢測區是否涵蓋該至少一電子元件的該凸點區及該非凸點區的判定,其中該檢測區係僅涵蓋部分的該電子元件的表面。 According to an embodiment of the present invention, under the condition that the first bump region imaging method is adopted in the bump region image capturing step, the bump region image capturing step and the non-bump region image capturing step can be performed And before the whole region imaging step, an additional imaging step is further included. The additional imaging step is to irradiate the detection area with the first type of irradiating light or the second type of irradiating light, and obtain a fifth image at an imaging angle of 80-100 degrees with the carrier plate of the electronic component . The fifth image is used to determine whether the detection area covers the bump area and the non-bump area of the at least one electronic component, wherein the detection area only covers part of the surface of the electronic component.
為達上述目的及其他目的,本發明復提出一種助焊劑分布狀況的檢測設備,係用於執行前述採用第一凸點區取像方式的檢測方法。該檢測設備配置於定義有供至少一電子元件置放的一承載台的上方,該檢測設備用於使一檢測區內之該至少一電子元件之表面的助焊劑被顯現以及取得對應的影像資料,以供後續進行助焊劑分布區域的判定,該至少一電子元件的表面定義有一凸點區及一非凸點區,該承載台上定義有該檢測區,該檢測設備包含:一第一取像模組、一高角度光源模組、及一低角度光源模組。該第一取像模組可配 置於該檢測區的上方,該第一取像模組被配置為以與該電子元件之載板的夾角為80~100度的取像角取得影像。該高角度光源模組可被配置為提供對該電子元件之載板的入射角為45~75度的一第一類型照射光,以照射該檢測區。該低角度光源模組可被配置為提供對該電子元件之載板的入射角為80~90度的一第二類型照射光,以照射該檢測區。其中,對該凸點區的取像,該低角度光源模組被關閉,該高角度光源模組被配置為產生具有一第一亮度的該第一類型照射光。其中,對該非凸點區的取像,該低角度光源模組被關閉,該高角度光源模組被配置為產生具有一第二亮度的該第一類型照射光。其中,該第一亮度可小於該第二亮度,該第二亮度係令位於該檢測區邊緣的該非凸點區中未塗佈助焊劑之區域在該第一取像模組取得的影像中所呈現出的像素灰階值介於150~254,以及,該第二亮度並令該凸點區在該第一取像模組取得的影像中所呈現出的像素灰階值大於254。 In order to achieve the above and other purposes, the present invention further proposes a detection device for flux distribution, which is used to implement the detection method using the first bump area imaging method. The detection device is arranged above a platform defined for placing at least one electronic component, and the detection device is used to visualize the solder flux on the surface of the at least one electronic component in a detection area and obtain corresponding image data For subsequent determination of the flux distribution area, the surface of the at least one electronic component defines a bump area and a non-bump area, the detection area is defined on the carrier platform, and the detection equipment includes: a first sampling image module, a high-angle light source module, and a low-angle light source module. The first imaging module can be equipped with Placed above the detection area, the first imaging module is configured to acquire images at an imaging angle of 80° to 100° with the carrier board of the electronic component. The high-angle light source module can be configured to provide a first type of irradiating light with an incident angle of 45-75 degrees to the carrier board of the electronic component to irradiate the detection area. The low-angle light source module can be configured to provide a second type of irradiating light with an incident angle of 80-90 degrees to the carrier board of the electronic component to irradiate the detection area. Wherein, the low-angle light source module is turned off to capture the image of the bump area, and the high-angle light source module is configured to generate the first type of irradiating light with a first brightness. Wherein, for capturing the image of the non-bump area, the low-angle light source module is turned off, and the high-angle light source module is configured to generate the first type of irradiating light with a second brightness. Wherein, the first brightness may be smaller than the second brightness, and the second brightness is to make the area not coated with flux in the non-bump area located at the edge of the inspection area appear in the image obtained by the first imaging module. The displayed pixel gray scale value is between 150-254, and the second brightness makes the pixel gray scale value displayed by the bump area greater than 254 in the image obtained by the first imaging module.
根據本發明之一實施例,於該低角度光源模組所產生的該第二類型照射光可用於使該檢測區內之該至少一電子元件之表面的異物被顯現,同時該高角度光源模組被配置為關閉。 According to an embodiment of the present invention, the second type of irradiating light generated by the low-angle light source module can be used to visualize foreign objects on the surface of the at least one electronic component in the detection area, while the high-angle light source module Groups are configured to be closed.
根據本發明之一實施例,該高角度光源模組及該低角度光源模組各個可被以圍繞在該檢測區上方的方式進行配置。該高角度光源模組係高於該低角度光源模組。其中,該檢測區係被配置為僅涵蓋一輸送道上之二個並列成一組的該二個電子元件。 According to an embodiment of the present invention, each of the high-angle light source module and the low-angle light source module can be arranged in a manner surrounding the detection area. The high-angle light source module is higher than the low-angle light source module. Wherein, the detection area is configured to only cover the two electronic components arranged in a group on a conveying lane.
根據本發明之一實施例,該高角度光源模組及該低角度光源模組各個可被以在該檢測區之兩相對側上方具有互呈平行之二光源裝置的方式進行配置。該高角度光源模組係高於該低角度光源模組。其中,該檢測區係被配 置為僅涵蓋一輸送道上之至少三個以上並列成一組的該至少三個電子元件,該至少三個電子元件的並列方向係平行於各該光源裝置,該輸送道的輸送方向係垂直於各該光源裝置。 According to an embodiment of the present invention, each of the high-angle light source module and the low-angle light source module can be configured to have two parallel light source devices on two opposite sides of the detection area. The high-angle light source module is higher than the low-angle light source module. Among them, the detection zone is assigned Arranging to only cover at least three or more of the at least three electronic components arranged in a group on a conveying path, the parallel direction of the at least three electronic components is parallel to each of the light source devices, and the conveying direction of the conveying path is perpendicular to each The light source device.
根據本發明之一實施例,該低角度光源模組及該高角度光源模組各包括複數發光單元,半功率角可採用小於30度的發光單元。 According to an embodiment of the present invention, the low-angle light source module and the high-angle light source module each include a plurality of light-emitting units, and the half-power angle of the light-emitting units can be less than 30 degrees.
為達上述目的及其他目的,本發明復提出一種助焊劑分布狀況的檢測設備,用於執行如前述之採用第二凸點區取像方式的檢測方法。該檢測設備配置於定義有供至少一電子元件置放的一承載台的上方,該檢測設備用於使一檢測區內之該至少一電子元件之表面的助焊劑被顯現以及取得對應的影像資料,以供後續進行助焊劑分布區域的判定。該至少一電子元件的表面定義有一凸點區及一非凸點區,該承載台上定義有該檢測區,該檢測設備包含:一第一取像模組、一第二取像模組、一高角度光源模組及一低角度光源模組。該第一取像模組配置於該檢測區的上方,該第一取像模組被配置為以與該電子元件之載板的夾角為80~100度的取像角取得影像。該第二取像模組配置於該檢測區之第一外側區的上方,該第二取像模組被配置為以與該電子元件之載板的夾角為60~70度的取像角取得影像。該高角度光源模組被配置為提供對該電子元件之載板的入射角為45~75度的一第一類型照射光照射該電子元件。該低角度光源模組被配置為提供對該電子元件之載板的入射角為80~90度的一第二類型照射光照射該電子元件。其中,該低角度光源模組及該第二取像模組的運作係用於取得供判定該凸點區之助焊劑分布區域的一第二影像,該高角度光源模組及該第一取像模組的運作係用於取得供判定該非凸點區之助焊劑分布區域的一第三影像。 In order to achieve the above and other purposes, the present invention further proposes a detection device for flux distribution, which is used to implement the detection method using the second bump area imaging method as described above. The detection device is arranged above a platform defined for placing at least one electronic component, and the detection device is used to visualize the solder flux on the surface of the at least one electronic component in a detection area and obtain corresponding image data , for subsequent determination of the flux distribution area. The surface of the at least one electronic component defines a bump area and a non-bump area, the detection area is defined on the carrying platform, and the detection equipment includes: a first imaging module, a second imaging module, A high-angle light source module and a low-angle light source module. The first imaging module is disposed above the detection area, and the first imaging module is configured to acquire images at an imaging angle of 80-100 degrees with the carrier plate of the electronic component. The second imaging module is arranged above the first outer area of the detection area, and the second imaging module is configured to obtain an image at an included angle of 60 to 70 degrees with the carrier plate of the electronic component. image. The high-angle light source module is configured to provide a first type of irradiating light with an incident angle of 45-75 degrees to the carrier board of the electronic component to irradiate the electronic component. The low-angle light source module is configured to provide a second type of irradiating light with an incident angle of 80-90 degrees to the carrier board of the electronic component to irradiate the electronic component. Wherein, the operation of the low-angle light source module and the second image-taking module is used to obtain a second image for determining the flux distribution area of the bump area, and the high-angle light source module and the first image-taking module The operation of the image module is used to obtain a third image for determining the flux distribution area of the non-bump area.
根據本發明之一實施例,該低角度光源模組可包括分別鄰近該檢測區之該第一外側區、第二外側區、第三外側區及第四外側區的第一低角度光源裝置、第二低角度光源裝置、第三低角度光源裝置及第四低角度光源裝置。該第二類型照射光係由該第一低角度光源裝置、該第三低角度光源裝置及該第四低角度光源裝置的照射光所形成,該第一外側區與該第二外側區係分別位於該檢測區的相對側,該第三外側區與該第四外側區係分別位於該檢測區的相對側。 According to an embodiment of the present invention, the low-angle light source module may include a first low-angle light source device adjacent to the first outer area, the second outer area, the third outer area, and the fourth outer area of the detection area, respectively, The second low-angle light source device, the third low-angle light source device and the fourth low-angle light source device. The second type of irradiating light is formed by the irradiating light of the first low-angle light source device, the third low-angle light source device and the fourth low-angle light source device, and the first outer area and the second outer area are respectively Located on opposite sides of the detection area, the third outer area and the fourth outer area are respectively located on opposite sides of the detection area.
該低角度光源模組及該高角度光源模組各包括複數發光單元,半功率角可採用小於30度的發光單元。 The low-angle light source module and the high-angle light source module each include a plurality of light-emitting units, and the half-power angle of the light-emitting units can be less than 30 degrees.
前揭技術內容針對電子元件的凸點區,藉由所塗佈之助焊劑的預定厚度來做為區分準則,並採用匹配的凸點區取像方式,以及採用相同的非凸點區取像步驟,來取得對應的影像資料,進而供後續凸點區與非凸點區之助焊劑分布情況的判定。前揭技術內容可令所取得的影像具有低干擾與高對比的特性,進而對後續進行之助焊劑分布區域是否正確的判定,甚至是有無異物沾附、生成的判定,提供了正確的取樣影像。 For the bump area of the electronic components, the predetermined thickness of the coated flux is used as the distinguishing criterion, and the matching imaging method of the bump area is adopted, and the same image of the non-bump area is adopted. step, to obtain the corresponding image data, and then provide for the judgment of flux distribution in the subsequent bump area and non-bump area. The technical content disclosed above can make the obtained image have the characteristics of low interference and high contrast, and then provide the correct sampling image for the subsequent determination of whether the flux distribution area is correct, or even the determination of whether there is foreign matter attached or generated. .
100:承載台 100: carrying platform
200:電子元件 200: electronic components
311:第一取像模組 311: The first imaging module
312:第二取像模組 312:Second imaging module
313:反射模組 313: Reflection module
411:高角度光源模組 411: High angle light source module
412:低角度光源模組 412:Low angle light source module
412a:第一低角度光源裝置 412a: First low-angle light source device
412b:第二低角度光源裝置 412b: Second low-angle light source device
412c:第三低角度光源裝置 412c: The third low-angle light source device
412d:第四低角度光源裝置 412d: The fourth low-angle light source device
θ1:第一類型照射光的入射角 θ 1 : the incident angle of the first type of irradiating light
θ2:第二類型照射光的入射角 θ 2 : the incident angle of the second type of irradiating light
A:檢測區 A: Detection area
A’:區域(對應檢測區A) A': area (corresponding to detection area A)
P1:第一外側區 P1: first lateral zone
P2:第二外側區 P2: second lateral region
P3:第三外側區 P3: third lateral zone
P4:第四外側區 P4: fourth lateral zone
C1:第一影像 C1: first image
C2:第二影像 C2:Second Image
C3:第三影像 C3: Third Image
C4:第四影像 C4: Fourth Image
L1:第一類型照射光 L1: The first type of irradiation light
L2:第二類型照射光 L2: The second type of irradiation light
F:輸送道的輸送方向 F: Conveying direction of conveying lane
S100~S200:步驟 S100~S200: Steps
[圖1]為根據本發明一實施例的檢測方法的示意圖。 [ Fig. 1 ] is a schematic diagram of a detection method according to an embodiment of the present invention.
[圖2]為根據圖1實施例在第一凸點區取像方式下的檢測環境配置示意圖。 [ Fig. 2 ] is a schematic diagram of the detection environment configuration in the first bump area imaging mode according to the embodiment of Fig. 1 .
[圖3]為根據圖1實施例在第二凸點區取像方式下的檢測環境配置示意圖。 [ FIG. 3 ] is a schematic diagram of the detection environment configuration in the second bump area imaging mode according to the embodiment of FIG. 1 .
[圖4]為根據本發明另一實施例在第一凸點區取像方式下的檢測環境的配置示意圖。 [ FIG. 4 ] is a schematic configuration diagram of the detection environment in the first bump area imaging mode according to another embodiment of the present invention.
[圖5]為根據本發明在第一凸點區取像方式下的第一實施例的檢測設備配置示意圖。 [ Fig. 5 ] is a schematic configuration diagram of the detection equipment according to the first embodiment of the present invention under the imaging mode of the first bump area.
[圖6]為根據本發明在第一凸點區取像方式下的第二實施例的檢測設備配置示意圖。 [ FIG. 6 ] is a schematic configuration diagram of the detection equipment according to the second embodiment of the present invention under the imaging method of the first bump area.
[圖7]為根據本發明在第二凸點區取像方式下的第一實施例的檢測設備配置示意圖。 [ Fig. 7 ] is a schematic configuration diagram of the detection equipment according to the first embodiment of the present invention under the second bump area imaging mode.
為充分瞭解本發明之目的、特徵及功效,茲藉由下述具體之實施例,並配合所附之圖式,對本發明做一詳細說明,說明如後:於本文中,所描述之用語「一」或「一個」來描述單元、部件、結構、裝置、模組、系統、部位或區域等。此舉只是為了方便說明,並且對本發明之範疇提供一般性的意義。因此,除非很明顯地另指他意,否則此種描述應理解為包括一個或至少一個,且單數也同時包括複數。 In order to fully understand the purpose, characteristics and effects of the present invention, the present invention will be described in detail by means of the following specific embodiments and accompanying drawings, as follows: In this article, the term " "a" or "one" to describe a unit, component, structure, device, module, system, part or region, etc. This is done for convenience of description only and to provide a general sense of the scope of the invention. Accordingly, such description should be read to include one or at least one and the singular also includes the plural unless it is obvious that it is otherwise meant.
於本文中,所描述之用語「包含、包括、具有」或其他任何類似用語意係非僅限於本文所列出的此等要件而已,而是可包括未明確列出但卻是所述單元、部件、結構、裝置、模組、系統、部位或區域通常固有的其他要件。 In this document, the described terms "comprising, including, having" or any other similar terms mean that they are not limited to the elements listed herein, but may include elements not explicitly listed but described, Other elements normally inherent in a component, structure, device, module, system, site or area.
於本文中,所描述之「第一」或「第二」等類似序數之詞語,係用以區分或指關聯於相同或類似的元件、結構、部位或區域,且不必然隱含 此等元件、結構、部位或區域在空間上的順序。應了解的是,在某些情況或配置下,序數詞語係可交換使用而不影響本發明之實施。 In this article, the words "first" or "second" and similar ordinal numbers described are used to distinguish or refer to the same or similar elements, structures, parts or regions, and do not necessarily imply The spatial order of such elements, structures, parts or regions. It should be understood that in some cases or configurations, ordinal terms may be used interchangeably without affecting the practice of the present invention.
具有半導體封裝結構的電子元件可包含晶片及承載該晶片的載板,例如是倒裝晶片(Flip Chip),或是其他利用凸點(Bump)將半導體晶粒之各電極引出的半導體結構。電子元件的表面可區分為分布凸點的一凸點區及未分布凸點的一非凸點區,其係由半導體封裝結構的設計所制定。依據半導體封裝結構的設計,藉由塗佈裝置,進行凸點區的助焊劑塗佈(凸點區可能集中在一區塊或是由多個小區塊組成)。因此,以人工抽檢目視檢測的方式顯然無法精確且全面的對這些電子元件進行逐一檢測,導致在助焊劑塗佈不正確時,可能產生諸如電性連接不良、外觀瑕疵等的各種問題。 An electronic component with a semiconductor package structure may include a chip and a substrate carrying the chip, such as a flip chip (Flip Chip), or other semiconductor structures that use bumps to lead out the electrodes of the semiconductor chip. The surface of the electronic component can be divided into a bump area where bumps are distributed and a non-bump area where no bumps are distributed, which is determined by the design of the semiconductor package structure. According to the design of the semiconductor package structure, the coating device is used to coat the flux on the bump area (the bump area may be concentrated in one block or consist of multiple small blocks). Therefore, it is obviously impossible to accurately and comprehensively inspect these electronic components one by one by means of manual random inspection and visual inspection. As a result, various problems such as poor electrical connection and appearance defects may occur when the flux is not applied correctly.
由於助焊劑本身具有透光屬性且表面曲度容易有不一致的情況。加上在凸點區中,助焊劑底下的凸點亦屬於金屬材質或包含有金屬材料,以及助焊劑底下之載板的平坦表面等的這些情況,使得一般的光學檢測之照光及取像條件下,難以正確區別出反射光是來自凸點、載板的反射光還是來自助焊劑的反射光,造成後續助焊劑分布情況之判定的困難。 Since the flux itself has light-transmitting properties and the surface curvature is prone to inconsistencies. In addition, in the bump area, the bumps under the flux are also made of metal or contain metal materials, and the flat surface of the carrier under the flux, etc., make the lighting and imaging conditions of general optical inspection In this situation, it is difficult to correctly distinguish whether the reflected light is from the bumps, the reflected light from the carrier board or the reflected light from the flux, which makes it difficult to determine the distribution of the subsequent flux.
此外,根據本發明的實施例,助焊劑的塗佈厚度可以做為檢測方式的配置依據。待測之電子元件具有預定規格的助焊劑塗佈厚度(非指實際厚度值),本發明實施例中所提及的助焊劑預定厚度,除了指的是預定塗佈條件下所應達到的助焊劑預定厚度外,更包含但非限定為電子元件上的實際助焊劑厚度。以預定規格的助焊劑塗佈厚度去匹配對應的檢測方式,對於凸點區內助焊劑分布情況來說,能使助焊劑被有效顯現進而提高被辨識度。進一步地,對於非凸點區內的助焊劑分布情況來說,採用另一種對應的檢測步驟,同樣是為了 使助焊劑能被有效顯現進而提高被辨識度。是以,根據本發明的實施例可讓後續助焊劑分布情況之判定較為容易且正確,具有顯著的成效。 In addition, according to the embodiment of the present invention, the coating thickness of the flux can be used as the configuration basis of the detection method. The electronic component to be tested has a flux coating thickness of a predetermined specification (not referring to the actual thickness value). The predetermined thickness of the flux mentioned in the embodiments of the present invention refers to the flux that should be achieved under the predetermined coating conditions. In addition to the predetermined thickness of the flux, it also includes but is not limited to the actual flux thickness on the electronic components. Matching the corresponding detection method with the flux coating thickness of a predetermined specification can effectively display the flux for the distribution of the flux in the bump area and improve the degree of recognition. Furthermore, for the distribution of flux in the non-bump area, another corresponding detection step is adopted, also for the purpose of Make the flux can be effectively displayed to improve the recognition. Therefore, according to the embodiment of the present invention, it is easier and more accurate to determine the distribution of the subsequent soldering flux, which has remarkable effects.
請參照圖1,為根據本發明一實施例的檢測方法的示意圖。藉由匹配的照光及取像條件來對電子元件的表面進行取像,以解決助焊劑分布情況難以被顯現的問題。圖1所示例者,為先進行凸點區取像步驟S100,再進行非凸點區取像步驟S200,惟,此僅為示例,此二步驟的順序亦可調換以及於二者間加入其他步驟。 Please refer to FIG. 1 , which is a schematic diagram of a detection method according to an embodiment of the present invention. The surface of the electronic component is captured by matching lighting and imaging conditions to solve the problem that the flux distribution is difficult to be visualized. As shown in Fig. 1, the image capturing step S100 of the bump area is performed first, and then the image capturing step S200 of the non-bump area is performed. However, this is only an example, and the order of these two steps can also be exchanged and other steps can be added between the two. step.
在凸點區取像步驟S100中,採用的檢測方式是第一凸點區取像方式或第二凸點區取像方式。此兩種凸點區取像方式的其中一種是本發明實施例中針對凸點區所採用的取像步驟。前述的助焊劑的預定厚度被當作是一個厚度門檻值,小於此厚度門檻值的,採用第一凸點區取像方式,反之,大於或等於此厚度門檻值的則採用第二凸點區取像方式。歸納來說,本實施例將具有助焊劑厚度較厚的電子元件採用第二凸點區取像方式,反之,將具有助焊劑厚度較薄的電子元件採用第一凸點區取像方式。 In step S100 of capturing the image of the bump area, the detection mode adopted is the first imaging mode of the bump area or the second imaging mode of the bump area. One of the two imaging methods of the bump area is the imaging step adopted for the bump area in the embodiment of the present invention. The predetermined thickness of the aforementioned solder flux is regarded as a thickness threshold value. If it is less than this thickness threshold value, the first bump area imaging method will be used. Otherwise, if it is greater than or equal to this thickness threshold value, the second bump area will be used. Image acquisition method. To sum up, in this embodiment, the electronic components with thicker flux thickness adopt the second bump area imaging mode, and on the contrary, the electronic components with thinner flux thickness adopt the first bump area imaging mode.
藉由第一凸點區取像方式可取得第一影像,此外,藉由第二凸點區取像方式可取得第二影像。其中,所取得的第一影像或第二影像是用於供凸點區的助焊劑分布區域的判定。本實施例在凸點區取像步驟S100中,可讓凸點區的助焊劑分布情況被顯現出來。第一凸點區取像方式採用的是高角度的第一類型照射光L1(明場照明)及高角度取像的檢測環境,以取得凸點區的助焊劑分布情況的影像(第一影像)。第二凸點區取像方式採用的則是低角度的第二類型照射光L2(暗場照明)及低角度取像的檢測環境,取得凸點區的助焊劑分布情 況的影像(第二影像)。此二者的檢測設備配置情況,會在後述的內容中做進一步說明。 The first image can be obtained by the first bump area imaging method, and the second image can be obtained by the second bump area imaging method. Wherein, the obtained first image or the second image is used for determining the flux distribution area of the bump area. In this embodiment, in the image capturing step S100 of the bump area, the flux distribution in the bump area can be displayed. The imaging method of the first bump area adopts the first type of high-angle illumination light L1 (bright field illumination) and the detection environment of high-angle imaging to obtain the image of the flux distribution in the bump area (the first image ). The second bump area imaging method adopts the second type of low-angle illumination light L2 (dark field illumination) and the detection environment of low-angle imaging to obtain the flux distribution in the bump area. image of the situation (second image). The configuration of the detection equipment of the two will be further explained in the content described later.
在非凸點區取像步驟S200中,無論搭配的是第一凸點區取像方式或第二凸點區取像方式,均可採用高角度的第一類型照射光L1(明場照明)及高角度取像的檢測環境,取得非凸點區的助焊劑分布情況的影像(第三影像)。 In the non-bump area imaging step S200, regardless of whether the first bump area imaging mode or the second bump area imaging mode is used, the first type of high-angle illumination light L1 (bright field illumination) can be used and the detection environment of high-angle imaging to obtain an image (third image) of flux distribution in the non-bump area.
在前述的凸點區取像步驟S100及非凸點區取像步驟S200中,取像的範圍並不限於僅有凸點區或僅有非凸點區。舉例來說,凸點區取像步驟S100中的取像範圍可以包含凸點區及非凸點區,只是對於助焊劑分布狀況的分析來說,在凸點區取像步驟S100中所取得的第一影像或第二影像,適用於判定凸點區內的助焊劑分布狀況,換言之,凸點區內的助焊劑可在第一影像或第二影像中具有較顯著的顯現狀況,易於被判定凸點區內的助焊劑塗佈情況。另一方面,非凸點區內的助焊劑可在第三影像中具有較顯著的顯現狀況,易於被判定非凸點區內的助焊劑塗佈情況。 In the step S100 of capturing an image of the bump area and the step S200 of capturing an image of the non-bump area, the range of imaging is not limited to only the bump area or only the non-bump area. For example, the imaging range in the bump area imaging step S100 may include the bump area and the non-bump area, but for the analysis of the flux distribution, the image obtained in the bump area imaging step S100 The first image or the second image is suitable for judging the flux distribution in the bump area, in other words, the flux in the bump area can have a more obvious appearance in the first image or the second image, which is easy to be judged Flux application in the bump area. On the other hand, the soldering flux in the non-bump area may have a relatively obvious appearance in the third image, which is easy to determine the flux coating in the non-bump area.
接著請同時參照圖1及圖2,圖2為根據圖1實施例在第一凸點區取像方式下的檢測環境配置示意圖。第一凸點區取像方式的取像條件是採用高角度的明場照明及高角度的取像角度來進行檢測環境的配置。在凸點區取像步驟S100的第一凸點區取像方式中,是以照射光的光入射角介於45~75度的第一類型照射光L1來入射至電子元件200。此處的光入射角是指相對於電子元件200之載板表面的法線或是載板的板體中心平面的法線來定義。此外,若定義法線的一側為正,相對側為負,那麼光入射角介於45~75度的第一類型照射光L1相對於法線來說就可包含45~75度及-45~-75度。
Next, please refer to FIG. 1 and FIG. 2 at the same time. FIG. 2 is a schematic diagram of a detection environment configuration in the first bump area imaging mode according to the embodiment of FIG. 1 . The imaging condition of the first bump area imaging method is to use high-angle bright field illumination and high-angle imaging angle to configure the detection environment. In the first bump area imaging method of the bump area imaging step S100 , the first type of illumination light L1 with an incident angle of the illumination light ranging from 45° to 75° is incident on the
圖2示例的檢測環境中,承載台100定義有用來放置電子元件200的檢測區A,在承載台100上方則是配置有用於對檢測區A進行照光的高角度光源模組411以及對檢測區A進行取像的第一取像模組311。承載台100上可被置放單一或複數個電子元件,檢測環境也可以是在產線上的一個檢測站,承載台100可為一種連續輸送帶或輸送帶的一部分。
In the detection environment illustrated in FIG. 2 , the
請參照圖2,高角度光源模組411提供照射光入射至檢測區A,用以打亮電子元件200。此時,高角度光源模組411提供的照射光對電子元件200來說,所具有的入射角θ1是介於40~75度之間(例如40~60度、60~70度、45~75度),用以形成第一類型照射光L1。其中,高角度光源模組411提供的照射光可界定在45~75度間的入射角。對於助焊劑厚度較薄的塗佈情況來說,進一步可界定的是60~70度之間。在高角度光源模組411所提供的照射光中,可以基於高角度光源模組411所產生之光束的中心光束或光軸(如圖2示例的L1箭號)與電子元件200的載板的板體中心平面的法線之間的角度關係來界定入射至電子元件200的入射角θ1。於其他實施態樣來說,也可以基於高角度光源模組411所產生之光束中的所有光束與電子元件200之載板的板體中心平面的法線之間的角度關係來界定,所有光束均符合入射角θ1介於45~75度間的規範。再於其他實施態樣來說,也可以基於高角度光源模組411內之發光單元的半功率角(或稱光束角,Beam angle)的範圍來界定,亦即,在此態樣下,半功率角內的所有光束均需符合入射角θ1介於45~75度間的規範。
Referring to FIG. 2 , the high-angle
如圖2所示,第一取像模組311配置於檢測區A的上方,且被配置為以80~100度之間的取像角取得第一影像C1。第一取像模組311的取像角是指第一取像模組311的光軸(如攝像機之鏡頭的光軸)與電子元件200之載板間的
夾角(不同於前述之入射角)。此夾角例如是電子元件200之載板的板體中心平面與第一取像模組311之光軸間的夾角。對於塗佈有較薄的助焊劑的電子元件來說,基於高角度的照射光以及高角度的取像,可形成以明場照明方式來對電子元件200取像,有助於凸點區內之助焊劑的顯現。這使得有無塗佈到助焊劑的狀況可藉由所呈現出的較佳對比情況來供判別。
As shown in FIG. 2 , the
在凸點區內有被塗佈助焊劑的區域,較薄的助焊劑層塗佈狀況與較厚的助焊劑層塗佈狀況,對於照光角度與取像角度有著相異的敏感程度。雖然凸點區內有塗佈助焊劑的區域,基於電子元件200的載板上的各個凸點間的區域會被填入助焊劑,致使表面較平而提高反射率(未塗則反射率低,反射光不易進入第一取像模組311)。然而,在本實施例中,針對較薄的助焊劑層塗佈狀況,以高角度的照射光以及高角度的取像方式下的檢測環境,更能使助焊劑塗佈情況被有效顯現,有無塗佈助焊劑在影像中可呈現出較高的對比程度,進而能直接以影像中凸點區內具有灰階值較高(即較亮)的區域來判定有塗佈到助焊劑。反之,針對較厚的助焊劑層塗佈狀況,同樣以高角度的照射光以及高角度的取像方式下的檢測環境,基於較厚的助焊劑在表面容易呈現曲度不一的情況容易造成強烈反光,形成檢測上的干擾,進而令有無塗佈助焊劑的區域之間的灰階值差異程度較低,不足以達到有效顯現的效果。以助焊劑的厚薄指標來設定一個區分點,將可更有效地達到助焊劑的顯現效果。
In the area where flux is coated in the bump area, the thinner flux layer and the thicker flux layer have different sensitivities to the illumination angle and imaging angle. Although there is an area coated with flux in the bump area, the area between the bumps on the carrier board of the
據此,採用所塗佈的助焊劑的預定厚度的參數規格來匹配對應的檢測環境,有助於對助焊劑此種材料的塗佈狀況的檢測正確性。在本實施例中,作為此預定厚度的參數規格被視為厚度門檻值,此厚度門檻值對助焊劑此種材料來說,較佳是界定在1.8~10(μm)中的一值,更佳地是,例如2.1、2.2、 2.3、2.4(μm)中的其中一值,又或是例如5.7、5.8、5.9、6.0、6.1、6.2(μm)中的其中一值,再又或是例如8、9、10(μm)中的其中一值。當助焊劑的預定厚度小於此厚度門檻值時,凸點區取像步驟S100中採用第一凸點區取像方式來建置檢測環境;而當助焊劑的預定厚度大於或等於此厚度門檻值時,凸點區取像步驟S100中採用第二凸點區取像方式來建置檢測環境。 Accordingly, adopting the parameter specification of the predetermined thickness of the applied flux to match the corresponding detection environment is helpful to the accuracy of detection of the state of coating of the material such as flux. In this embodiment, the parameter specification as the predetermined thickness is regarded as a thickness threshold value, and this thickness threshold value is preferably defined as a value in 1.8-10 (μm) for this material of flux, more preferably Preferably, for example 2.1, 2.2, One of 2.3, 2.4 (μm), or one of 5.7, 5.8, 5.9, 6.0, 6.1, 6.2 (μm), or 8, 9, 10 (μm) one of the values of . When the predetermined thickness of the flux is less than the thickness threshold value, the first bump area imaging method is used to build the detection environment in the bump area imaging step S100; and when the predetermined thickness of the flux is greater than or equal to the thickness threshold value In this case, the second bump area imaging method is adopted in step S100 of capturing images of the bump areas to establish a detection environment.
是以,在第一凸點區取像方式的檢測環境下,所取得的第一影像C1中,有塗佈到助焊劑的區域,其影像內呈現出的亮度明顯增加,可以與沒有塗佈到助焊劑的區域所呈現出的較低亮度產生明顯區別,有助於提高凸點區內的助焊劑分布情況的識別度,進而有助於後端的分析判定。 Therefore, in the detection environment of the first bump area imaging method, in the first image C1 obtained, there is an area coated with flux, and the brightness in the image increases significantly, which can be compared with that without coating The lower brightness of the area where the flux is exposed to the flux produces a clear difference, which helps to improve the recognition of the flux distribution in the bump area, and then helps the analysis and judgment of the back end.
請再同時參照圖1及圖2,非凸點區取像步驟S200的取像條件同樣是採用明場照明的方式,亦是使用該高角度光源模組411提供的該第一類型照射光L1,以及使用該第一取像模組311以80~100度之間的取像角以取得第三影像C3。非凸點區取像步驟S200中,以照射光的光入射角介於45~75度來入射至電子元件200。此處的光入射角如前所述,可以是指相對於電子元件200之載板表面的法線來界定。
Please refer to FIG. 1 and FIG. 2 at the same time. The imaging conditions of the non-bump area imaging step S200 are also bright field illumination, and the first type of illumination light L1 provided by the high-angle
在進一步的實施例中,凸點區取像步驟S100中的第一凸點區取像方式中所採用的第一類型照射光L1的亮度被設定為第一亮度,在非凸點區取像步驟S200中所採用的第一類型照射光L1的亮度被設定為第二亮度。其中,第一亮度小於第二亮度。 In a further embodiment, the brightness of the first type of irradiating light L1 used in the first bump area imaging method in the bump area imaging step S100 is set to the first brightness, and the image is captured in the non-bump area The brightness of the first type of illumination light L1 employed in step S200 is set as the second brightness. Wherein, the first brightness is smaller than the second brightness.
對於較薄的助焊劑塗佈層來說,要進一步加強影像中的灰階對比度,可針對打光的亮度進行細部設定。第二亮度的第一類型照射光L1須滿足下述一般情況下的條件,在第三影像C3中的非凸點區內,未塗佈助焊劑的區域
處所呈現出的像素灰階值需接近至255,舉例來說需介於245~254。此外,在第三影像C3中的凸點區內所呈現出的像素灰階值需大於254。同時,搭配前述的第一亮度小於第二亮度的條件,可進一步讓助焊劑的預定塗佈厚度小於厚度門檻值的電子元件200在此檢測環境下,更清楚地使助焊劑的分布情況被顯現,提高助焊劑分布的識別度。
For a thinner flux coating layer, to further enhance the grayscale contrast in the image, detailed settings can be made for the brightness of the lighting. The first type of irradiating light L1 with the second brightness must meet the following general conditions. In the non-bump area in the third image C3, the area not coated with flux
The gray scale value of the displayed pixel must be close to 255, for example, it must be between 245~254. In addition, the gray scale value of the pixel displayed in the bump area in the third image C3 needs to be greater than 254. At the same time, with the above-mentioned condition that the first brightness is smaller than the second brightness, the distribution of the flux can be more clearly displayed in the detection environment of the
前述的一般情況是指非凸點區內所顯露的電路板是表面不具有圖案化線路的電路板。然而,當非凸點區內所顯露的電路板是表面具有圖案化線路的電路板時,在第三影像C3中的非凸點區內,未塗佈助焊劑的區域處所呈現出的像素灰階值需接近至150以上,舉例來說可介於150~180、170~200、190~220、210~240等區間,較佳是介於170~180。在第三影像C3中的凸點區內所呈現出的像素灰階值則同樣需大於254。 The aforementioned general situation means that the circuit board exposed in the non-bump area is a circuit board without patterned lines on the surface. However, when the circuit board exposed in the non-bump area is a circuit board with patterned lines on the surface, in the non-bump area in the third image C3, the pixel gray in the area where no flux is applied The order value needs to be close to 150 or more, for example, it can be between 150-180, 170-200, 190-220, 210-240, etc., preferably between 170-180. The grayscale value of the pixel displayed in the bump area in the third image C3 must also be greater than 254.
接著請參照圖3,為根據圖1實施例在第二凸點區取像方式下的檢測環境配置示意圖。第二凸點區取像方式的取像條件是採用暗場照明的方式。步驟S100中,以照射光的光入射角介於80~90度的第二類型照射光L2來入射至電子元件200。此處的光入射角是指相對於電子元件200之載板表面的法線或是載板的板體中心平面的法線來界定。此外,若定義法線的一側為正,相對側為負,那麼光入射角介於80~90度的第二類型照射光L2相對於法線來說就可包含80~90度及-80~-90度。
Next, please refer to FIG. 3 , which is a schematic diagram of a detection environment configuration in the second bump area imaging mode according to the embodiment of FIG. 1 . The imaging condition of the second bump area imaging mode is to adopt the dark field illumination mode. In step S100 , the second type of irradiating light L2 with an incident angle of the irradiating light ranging from 80° to 90° is incident on the
請參照圖3,低角度光源模組412提供照射光以打亮電子元件200的表面,此低角度光源模組412所提供的照射光對電子元件200之載板所具有的入射角θ2是介於80~90度之間,用以形成第二類型照射光L2。其中,更佳的是85~90度之間,接近所謂的0度入射光。低角度光源模組412所提供的照射光
中,可以基於低角度光源模組412所產生之光束的中心光束與電子元件200之載板的板體中心平面來界定此入射角。於其他實施態樣來說,也可以基於低角度光源模組412所產生之光束中的所有光束與電子元件200之載板的板體中心平面來界定,所有光束均需符合入射角介於80~90度間的規範。再於其他實施態樣來說,也可以基於低角度光源模組412內之發光單元的半功率角(或稱光束角,Beam angle)的範圍來界定,亦即,在此態樣下,半功率角內的所有光束均需符合入射角介於80~90度間的規範。
Please refer to FIG. 3 , the low-angle
如圖3所示,於凸點區取像步驟S100中的第二凸點區取像方式下,以及在第二類型照射光L2照射下,第二取像模組312以介於60~70度的取像角進行取像,取得第二影像C2。第二取像模組312的取像角是指第二取像模組312的光軸(如攝像機之鏡頭的光軸)與電子元件200之載板間的夾角(不同於前述之入射角)。此夾角例如是電子元件200之載板的板體中心平面與第二取像模組312之光軸間的夾角。對於塗佈有較厚的助焊劑的電子元件來說,基於低角度的照射光以及低角度的取像角,可形成以暗場照明方式來對電子元件取像,有助於凸點區內之助焊劑的顯現。
As shown in FIG. 3 , under the second bump area imaging mode in the bump area imaging step S100, and under the irradiation of the second type of illumination light L2, the
在第二類型照射光L2以及低角度之斜向取像的檢測環境下,在凸點區內,有被塗佈助焊劑的區域,因透明的助焊劑具有相異於凸點與載板表面的反射率且第二類型照射光L2在透明的助焊劑內的光路徑較長,因而在影像上可呈現出灰階亮度較暗的情況。另一方面,在凸點區內,無塗佈到助焊劑的區域則因保留了金屬(凸點位置)的反光,甚至是保留了載板表面(較平整)的反光,在影像上可呈現出灰階亮度較亮的情況。是以,有塗佈到助焊劑之區域,其影像之亮度明顯下降,可與沒有塗佈到助焊劑之區域所呈現出的較高亮度產 生明顯區別,有助於提高助焊劑分布情況的識別度,進而有益於後端的分析判定。 In the detection environment of the second type of illumination light L2 and oblique imaging at a low angle, there is an area coated with flux in the bump area, because the transparent flux has different properties from the bump and the surface of the carrier The reflectivity and the second type of illumination light L2 have a longer optical path in the transparent soldering flux, so the grayscale brightness can appear darker on the image. On the other hand, in the bump area, the area not coated with flux can be displayed on the image due to the reflection of the metal (bump position) and even the reflection of the carrier surface (flatter). The case where the gray scale brightness is brighter. Therefore, the brightness of the image in the area coated with flux is significantly reduced, which can be compared with the higher brightness of the area not coated with flux. It is helpful to improve the recognition of flux distribution, which is beneficial to the analysis and judgment of the back end.
進一步地,第二類型照射光L2可不包含位於第二取像模組312之對向側的所產生的照射光。亦即,如圖3所示例者,第二取像模組312位於檢測區A之一側的上方係為取像側,該取像側對該檢測區A來說的相對側係不提供照射光,如圖3示例之低角度光源模組412的對向側係不提供照射光(可不設置光源模組或是有設置光源模組但不點亮)。如此也可助於助焊劑分布情況的識別度。
Further, the second type of illumination light L2 may not include the illumination light generated on the opposite side of the
其中,第二影像C2內可能包含非凸點區的影像資料,然而,後端的分析判定可針對第二影像C2內之凸點區的影像資料進行分析,並例如是依據半導體封裝結構的設計資訊而於第二影像C2內界定出所需分析之凸點區內的影像資料。 Wherein, the second image C2 may contain the image data of the non-bump area, however, the back-end analysis and determination can be performed on the image data of the bump area in the second image C2, for example, based on the design information of the semiconductor package structure And in the second image C2, the image data in the bump area to be analyzed is defined.
請再同時參照圖1及圖3,非凸點區取像步驟S200的取像條件是採用明場照明的方式,亦同於前述,使用高角度光源模組411提供的第一類型照射光L1,以及使用第一取像模組311以80~100度之間的取像角以取得第三影像C3。步驟S200中,以照射光的光入射角介於45~75度來入射至電子元件200。此處的光入射角如前所述,可以是指相對於電子元件200之載板表面的法線來界定。
Please refer to FIG. 1 and FIG. 3 at the same time. The imaging condition of the non-bump area imaging step S200 is to adopt the bright field illumination method, which is also the same as the above, using the first type of illumination light L1 provided by the high-angle
於步驟S200中,在第一類型照射光L1照射下,第一取像模組311以介於80~100度的取像角進行取像,取得第三影像C3。其中,第三影像C3更佳的是以介於85~95度的取像角進行取像(正拍)。第一取像模組311的取像角是指第一取像模組311的光軸(如攝像機之鏡頭的光軸)與電子元件200之載板間
的夾角。此夾角例如是電子元件200之載板的板體中心平面與第一取像模組311之光軸間的夾角。對於不具有凸點的非凸點區來說,在高角度的照射光以及高角度的取像之下,可形成以明場照明方式來對電子元件取像,有助於非凸點區內之助焊劑的顯現。
In step S200 , under the irradiation of the first type of light L1 , the
通常助焊劑的塗佈區域會被設定成塗佈在凸點區及凸點區外圍的一定距離內。在非凸點區內,因為無凸點之干擾以及載板表面與助焊劑表面之反射率的不同,於第一類型照射光L1以及高角度之取像的檢測環境下,較平整之載板在有被塗佈到助焊劑的區域可容亦呈現出灰階亮度較暗的情況。相反地,在非凸點區內且無塗佈到助焊劑的區域則在影像上可呈現出灰階亮度較亮的情況。是以,有塗佈到助焊劑之區域,其影像之亮度明顯下降,可與沒有塗佈到助焊劑之區域所呈現出的較高亮度產生明顯區別,有助於提高助焊劑分布情況的識別度,進而第三影像C3有助於後端供非凸點區之助焊劑分布區域的分析判定。 Generally, the flux coating area is set to be coated within a certain distance between the bump area and the periphery of the bump area. In the non-bump area, due to the interference of no bumps and the difference in reflectivity between the surface of the substrate and the surface of the flux, under the detection environment of the first type of illumination light L1 and high-angle imaging, a relatively flat substrate Areas that have been coated with flux may also exhibit darker grayscale brightness. On the contrary, in the non-bump area and the area not coated with flux, the gray scale brightness can be brighter in the image. Therefore, the brightness of the image in the area coated with flux is significantly reduced, which can be clearly distinguished from the higher brightness of the area not coated with flux, which helps to improve the identification of flux distribution degree, and the third image C3 is helpful for the analysis and determination of the flux distribution area for the non-bump area at the rear end.
在圖1及圖3的示例中,對於較厚的助焊劑塗佈層來說,藉由兩種特殊條件的搭配,進一步加大了灰階差異程度,令電子元件上的助焊劑分佈狀況能被有效地識別,克服了載板與凸點之高反射率所帶來之不易正確識別出助焊劑的缺點,進一步地,基於差異程度的拉大,也令助焊劑的檢測動作得以被自動化執行。 In the examples shown in Figure 1 and Figure 3, for the thicker flux coating layer, the combination of two special conditions further increases the gray scale difference, so that the flux distribution on the electronic components can It is effectively identified and overcomes the shortcomings of the high reflectivity of the substrate and bumps that make it difficult to correctly identify the flux. Further, based on the increase in the degree of difference, the detection of the flux can also be automatically performed. .
除了前述步驟S100、步驟S200外,還可包含全區取像步驟(圖1未示),此三步驟的順序無須限制,可個別地在任一順序中執行。於全區取像步驟中,在第二類型照射光L2的照射下,第一取像模組311以介於80~100度的取像角進行取像,取得第四影像C4。第一取像模組311的配置相同於前述描述的
配置,於此不再贅述。該第四影像C4是用於供電子元件200的凸點區及非凸點區內是否存在異物的判定。
In addition to the aforementioned step S100 and step S200, it may also include a whole-area imaging step (not shown in FIG. 1 ). The sequence of these three steps is not limited, and may be individually executed in any sequence. In the whole-area imaging step, under the irradiation of the second type of illumination light L2, the
請參照圖4,為根據本發明另一實施例在第一凸點區取像方式下的檢測環境的配置示意圖。圖4是以第一凸點區取像方式下的檢測環境作為示例,在第二凸點區取像方式下的檢測環境(已具備第一取像模組311及低角度光源模組412)亦同時適用。
Please refer to FIG. 4 , which is a schematic configuration diagram of a detection environment in the first bump area imaging mode according to another embodiment of the present invention. Figure 4 takes the detection environment in the first bump area imaging mode as an example, and the detection environment in the second bump area imaging mode (already equipped with the
在高角度取像(藉由第一取像模組311)及低角度照射光(藉由低角度光源模組412,同時關閉高角度光源模組411)的檢測環境下,大部分自電子元件表面所反射的光線會反射至高角度的取像系統外。但若電子元件表面沾附有異物或其他異物生成的情況,會在電子元件表面形成凸起的狀況,進而在凸起處產生低角度照射光會反射回高角度取像系統的情形,使得凸起處的灰階亮度可高於凸點、助焊劑及載板的灰階亮度,從而可檢測出是否有異物(例如塵點或其他異物)的情況。
In the detection environment of high-angle imaging (by the first image-taking module 311) and low-angle irradiation light (by the low-angle
進一步地,圖4的示例中的低角度光源模組412可用於產生朝向檢測區A照射的環形光,亦即,低角度光源模組412環設於檢測區A周圍的上方。如圖4所示的視角,在檢測區A的兩個相對側均提供低角度的照射光(第二類型照射光L2)。此外,因圖4視角的限制,檢測區A的另外兩個相對側的照射光未於圖4中顯示(可另參照圖7),藉由檢測區A外圍上方的光源,形成作為圍繞檢測區A的第二類型照射先L2(此處的配置為環形光)。
Further, the low-angle
接著請參照圖5,為根據本發明在第一凸點區取像方式下的第一實施例的檢測設備配置示意圖。檢測設備包含:第一取像模組311、高角度光源模組411、及低角度光源模組412。
Next, please refer to FIG. 5 , which is a schematic configuration diagram of a detection device according to a first embodiment of the present invention under the imaging method of the first bump area. The detection equipment includes: a
第一取像模組311配置於檢測區A的上方,第一取像模組311被配置為以與該電子元件之載板的夾角為80~100度的取像角取得影像。第一取像模組311被運作在凸點區取像步驟S100內的第一凸點區取像方式時,用以取得前述的第一影像C1(可參照圖2),此時,低角度光源模組412被關閉,僅開啟高角度光源模組411,並產生具有第一亮度的第一類型照射光L1。第一取像模組311被運作在非凸點區取像步驟S200時,用以取得前述的第三影像C3(可參照圖2),此時,低角度光源模組412同樣被關閉,僅開啟高角度光源模組411,並產生具有第二亮度的第一類型照射光L1。
The
高角度光源模組411被配置為提供對電子元件200之載板的入射角為45~75度的第一類型照射光L1,以照射檢測區A。低角度光源模組412被配置為提供對電子元件200之載板的入射角為80~90度的第二類型照射光L2,以照射檢測區A。
The high-angle
第一類型照射光L1被運作在凸點區取像步驟S100內的第一凸點區取像方式時,使用第一亮度。第一類型照射光L1被運作在非凸點區取像步驟S200時,則是使用第二亮度。如前所述,第一亮度小於第二亮度。第二亮度的定義可以是讓位於檢測區A邊緣的非凸點區中未塗佈助焊劑之區域,在第一取像模組311取得的第三影像C3中所呈現出的像素灰階值介於150~254。以及,第二亮度可讓凸點區在第一取像模組311取得的第三影像C3中所呈現出的像素灰階值大於254。其中,當非凸點區內所顯露的電路板是表面不具有圖案化線路的電路板時,第二亮度須使未塗佈助焊劑的區域所呈現出的像素灰階值接近至255,舉例來說需介於245~254;在另一方面,當非凸點區內所顯露的電路板是表面具有圖案化線路的電路板時,第二亮度須使未塗佈助焊劑的區域所呈現出
的像素灰階值需接近至150以上,舉例來說可介於150~180、170~200、190~220、210~240等區間,較佳是介於170~180。
When the first type of illumination light L1 is operated in the first bump area imaging mode in the bump area imaging step S100 , the first brightness is used. When the first type of illumination light L1 is operated in the non-bump region imaging step S200, the second brightness is used. As mentioned before, the first brightness is smaller than the second brightness. The second brightness can be defined as the gray scale of the pixels in the third image C3 obtained by the
如圖5的示例,為便於說明,作為輸送道的承載台100上,另以區域A’來標示出在第一取像模組311下方的檢測區A所會進行影像擷取的範圍。在圖5的示例中,輸送道上具有兩兩並列成一組的二個電子元件200(被一同檢測),並依序在輸送道上向後排列。標號F為輸送道的輸送方向。
As shown in FIG. 5 , for ease of illustration, on the carrying
此外,在緊湊的光源模組配置下,檢測區A可僅涵蓋部分的電子元件200(搭配本實施例揭露的檢測方式仍可完成助焊劑分布狀況的檢測)。其中,高角度光源模組411及低角度光源模組412各是以圍繞在檢測區A上方的方式進行配置,分別形成圍繞式高角度光源模組及圍繞式低角度光源模組,並分別向檢測區A提供了環形的照射光。高角度光源模組411並被配置為高於低角度光源模組412。
In addition, under the configuration of the compact light source module, the detection area A can only cover part of the electronic components 200 (the detection method disclosed in this embodiment can still complete the detection of the flux distribution). Among them, the high-angle
接著請參照圖6,為根據本發明在第一凸點區取像方式下的第二實施例的檢測設備配置示意圖。檢測設備同樣包含:第一取像模組311、高角度光源模組411、及低角度光源模組412。不同於圖5示例的是輸送道上具有至少三個以上並列成一組的該至少三個電子元件200(圖6示例5個被一同檢測),並依序在輸送道上向後排列。標號F同樣為輸送道的輸送方向。
Next, please refer to FIG. 6 , which is a schematic configuration diagram of a detection device according to a second embodiment of the present invention under the imaging mode of the first bump area. The detection device also includes: a
此外,在圖6中,高角度光源模組411及低角度光源模組412各係以在檢測區A之兩相對側上方具有互呈平行之二光源裝置的方式進行配置。高角度光源模組411高於低角度光源模組412。輸送道的輸送方向F則可垂直於各該光源裝置(411、412)。
In addition, in FIG. 6 , each of the high-angle
進一步地,在第一凸點區取像方式下,可採用緊湊的光源模組的配置(擷取的影像僅涵蓋一個電子元件的部分表面),另可在凸點區取像步驟S100、非凸點區取像步驟S200及全區取像步驟前更加上一個附加取像步驟。附加取像步驟可以使用第一類型照射光或該第二類型照射光來照射檢測區A。以及,以與電子元件200之載板的夾角為80~100度的取像角取得一第五影像(圖未示),第五影像用於供檢測區A是否涵蓋所設定之電子元件200的凸點區及非凸點區的判定,亦即,進行檢測前的定位。其中,檢測區A可被設定為僅涵蓋部分的電子元件的表面(如圖5及6的示例)。
Further, in the first bump area imaging method, a compact light source module configuration can be used (the captured image only covers a part of the surface of an electronic component), and in addition, the bump area image capturing step S100, non- An additional imaging step is performed before the bump area imaging step S200 and the entire area imaging step. The additional imaging step may use the first type of illumination light or the second type of illumination light to illuminate the detection zone A. And, take a fifth image (not shown) at an imaging angle of 80 to 100 degrees with the carrier plate of the
進一步地,在圖6的示例中,可令高角度光源模組411及低角度光源模組412所提供的照射光的波長被配置為與電子元件200的基板的顏色互補,可有助於助焊劑分布狀況的進一步凸顯。這是由於照射光的波長被配置為與基板的顏色互為互補色時,基板的反射光的對比度可被進一步提高,有助於助焊劑分布狀況的顯現。舉例來說,當基板的顏色為綠色時,高角度光源模組411及低角度光源模組412可採用可提供紅光波段的發光單元,或是透過對高角度光源模組411及低角度光源模組412的輸出光波段的切換來實現。
Further, in the example of FIG. 6 , the wavelength of the illumination light provided by the high-angle
接著請參照圖7,為根據本發明在第二凸點區取像方式下的第一實施例的檢測設備配置示意圖。此檢測設備可被架設於產線上,進而可對下方檢測區A逐一通過的電子元件進行檢測。此外,圖7示例的第一取像模組311包括兩組攝像機,用以涵蓋產線上通過之電子元件的面積(對應檢測區A),此僅為示例,並非作為一種限制。
Next, please refer to FIG. 7 , which is a schematic configuration diagram of the detection equipment according to the first embodiment of the present invention under the second bump area imaging mode. The inspection equipment can be erected on the production line, and then can inspect the electronic components passing through the lower inspection area A one by one. In addition, the
圖7所示例的檢測設備包含第一取像模組311、第二取像模組312、低角度光源模組(包括412a~412d)、高角度光源模組411及反射模組313。反射模組313可用於導引來自檢測區A之電子元件表面的光線(例如反射光)進入第二取像模組312,此配置可令檢測設備所需的安裝空間進一步地縮小。於其他實施態樣下,也可不具有該反射模組313,進而可如圖3所示例的態樣配置該第二取像模組312。反射模組313例如為一鏡子及一固定座的組合。
The detection device illustrated in FIG. 7 includes a
低角度光源模組412被配置為鄰近檢測區A,在檢測區A之第一外側區P1上方的是第一低角度光源裝置412a,在檢測區A之第二外側區P2上方的是第二低角度光源裝置412b,在檢測區A之第三外側區P3上方的是第三低角度光源裝置412c,在檢測區A之第四外側區P4上方的是第四低角度光源裝置412d。進一步來說,當四個低角度光源裝置(412a~412d)均點亮時,可形成圍繞檢測區A的環形光源組。前述檢測區A的各個外側是指在此檢測區A的延伸平面上,鄰近檢測區A的相關聯區域。於圖7,係以示例為矩形之檢測區A四個側邊的鄰近區域(P1、P2、P3、P4)來做標示。
The low-angle
低角度光源模組(包括412a~412d)及第二取像模組312的運作係用於取得第二影像C2。第二影像C2可供判定電子元件之凸點區的助焊劑分布區域。高角度光源模組411及第一取像模組311的運作係用於取得第三影像C3。第三影像C3可供判定電子元件之非凸點區的助焊劑分布區域。低角度光源模組(包括412a~412d)及第一取像模組311的運作則是用於取得第四影像C4,該第四影像C4可供判定電子元件的凸點區及非凸點區是否存在異物的情況。
The operation of the low-angle light source module (including 412 a - 412 d ) and the second
用以形成前述第二影像C2的照射光係為第二類型照射光L2(可一併參照圖3),而該第二類型照射光L2較佳可由第一低角度光源裝置412a、第
三低角度光源裝置412c及第四低角度光源裝置412d的照射光所形成。顯見地,該第二類型照射光L2係為低角度照射的非環形光。非環形光是指低角度光源模組(包括412a~412d)鄰近檢測區A的其中一側邊的發光單元,被控制為不對檢測區A提供照射,此其中一側邊指的是相對於第二影像C2的取像側(即412b處)。
The illuminating light used to form the aforementioned second image C2 is the second type of illuminating light L2 (refer to FIG.
It is formed by the irradiation light of the three low-angle
用以形成前述第三影像C3的照射光係為第一類型照射光L1(可一併參照圖3),該第一類型照射光L1可由高角度光源模組411所形成。如圖7所示,高角度光源模組411亦可由配置在檢測區A周圍上方的四組光源裝置來組成。當高角度光源模組411的此四組光源裝置均點亮時,亦可形成對檢測區A照射的環形光。
The illumination light used to form the aforementioned third image C3 is the first type illumination light L1 (refer to FIG. 3 together), and the first type illumination light L1 can be formed by the high-angle
在圖7的示例中,用以形成前述第四影像C4的照射光係為第二類型照射光L2(可參照圖4),而第二類型照射光L2可由第一低角度光源裝置412a、第二低角度光源裝置412b、第三低角度光源裝置412c及第四低角度光源裝置412d的照射光所形成。顯見地,用以形成前述第四影像C4的第二類型照射光L2係為低角度照射的環形光。
In the example of FIG. 7, the illumination light used to form the aforementioned fourth image C4 is the second type illumination light L2 (refer to FIG. It is formed by the irradiation light of the second low-angle
上述各個光源裝置中,可包括單個或複數發光單元(例如發光二極體),其中,各個發光單元可採用半功率角小於30度的發光單元,可進一步地提高光線的集中性與角度匹配程度的準確性。 Each of the above-mentioned light source devices may include a single or multiple light-emitting units (such as light-emitting diodes), wherein each light-emitting unit may use a light-emitting unit with a half-power angle of less than 30 degrees, which can further improve the concentration of light and the degree of angle matching. accuracy.
綜上所述,藉由對電子元件施加特定的檢測條件(包括照光條件及取像條件),可達到凸點區及非凸點區之助焊劑分布情況的正確顯現。其中,以塗佈之助焊劑的預定厚度來選用具有低角度照射光的第一凸點區取像方式或具有高角度照射光的第二凸點區取像方式,使影像資料中具有低干擾與高對比 的特性,進而對後續進行之助焊劑分布區域是否正確的判定,甚至是有無異物沾附、生成的判定,提供了正確的取樣影像。 To sum up, by applying specific detection conditions (including lighting conditions and imaging conditions) to electronic components, the correct visualization of flux distribution in bump areas and non-bump areas can be achieved. Among them, the first bump area imaging mode with low-angle irradiation light or the second bump area imaging mode with high-angle irradiation light are selected according to the predetermined thickness of the coated flux, so that the image data has low noise contrast with high The characteristics of the flux, and then the subsequent determination of whether the flux distribution area is correct, and even the determination of whether there is foreign matter attached and generated, provides the correct sampling image.
本發明在上文中已以較佳實施例揭露,然熟習本項技術者應理解的是,該實施例僅用於描繪本發明,而不應解讀為限制本發明之範圍。應注意的是,舉凡與該實施例等效之變化與置換,均應設為涵蓋於本發明之範疇內。因此,本發明之保護範圍當以申請專利範圍所界定者為準。 The present invention has been disclosed above with preferred embodiments, but those skilled in the art should understand that the embodiments are only used to describe the present invention, and should not be construed as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the embodiment should be included in the scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the patent application.
S100~S200:步驟 S100~S200: Steps
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TW201612511A (en) * | 2014-09-24 | 2016-04-01 | Solomon Technology Corp | Inspection equipment of transparent colloid |
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