TWI785447B - Extreme ultraviolet light apparatus and operation method thereof - Google Patents

Abstract

An extreme ultraviolet light apparatus includes a chamber, an extreme ultraviolet light source and a radical source. The extreme ultraviolet light source is configured to emit an extreme ultraviolet light beam into the chamber. The radical source is located in the chamber and adjacent to a path through which the extreme ultraviolet light beam passes. The radical source is configured to emit radicals to the path.

Description

Extreme ultraviolet light device and method of operation

Some embodiments of the present disclosure relate to extreme ultraviolet light devices and methods of operation thereof.

In recent years, semiconductor integrated circuits (ICs) have developed rapidly. Whether it is the materials used in the manufacture of ICs or IC design, after several generations of development, great progress has been made. Among them, according to Moore's Law, each generation should have smaller and more complex circuits than the previous generation. In the process of IC development, this corresponds to a significant increase in the functional density (that is, the number of interconnected elements per unit chip area) of each IC, while the geometric size (that is, in the manufacturing process, the smallest The size or length of a component or wire, such as a characteristic length, has been reduced. Increased functional density and reduced geometric size generally provide benefits due to increased efficiencies in manufacturing and associated cost reductions. The shrinking of the overall size also increases the complexity of IC processing and IC manufacturing. For this reason, higher-resolution lithography processes have been developed to cope with ever-shrinking geometric dimensions. For example, the lithography technology includes extreme ultraviolet lithography (EUVL) technology.

According to some embodiments of the present disclosure, an EUV device includes a chamber, an EUV light source, and a free radical source. The EUV light source is configured to emit EUV beams into the chamber. A source of free radicals is located within the chamber adjacent to the path of the EUV beam. The Radical Source is set to emit a complex number of radicals to the path.

According to some embodiments of the present disclosure, an operating method of an EUV device includes the following steps. An EUV light beam is emitted by an EUV light source. The EUV beam is reflected by the reflective surface of the mirror. A complex number of free radicals are emitted towards the reflective surface of the mirror by the free radical source.

According to some embodiments of the present disclosure, an operating method of an EUV device includes the following steps. An EUV light beam is emitted by an EUV light source. The EUV beam is received through the mask. A complex number of radicals are emitted towards the mask by the radical source.

The following disclosure provides many different embodiments or examples in order to achieve the different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the context of some implementations of the present disclosure. Of course, these examples are only examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the ensuing description may include embodiments where the first and second features are formed in direct contact, and may also include that additional features may be formed on Between the first and second features, so that the first and second features may not be in direct contact with each other. In addition, some embodiments of the present disclosure may repeat element symbols and/or letters in each example. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

Additionally, spatially relative terms, such as "below," "below," "lower," "above," "upper," and similar terms, are used for convenience in some embodiments of the present disclosure. The description may be used to describe the relationship of one element or feature depicted in the figures to another element or feature(s). Spatially relative terms are intended to encompass different orientations of elements in use or operation in addition to the orientation depicted in the figures. The device/element can be oriented differently (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly. Additionally, the term "consisting of" may mean "comprising" or "consisting of".

Please refer to Figure 1 and Figure 2 at the same time. FIG. 1 is a schematic diagram of an EUV device 100 according to some embodiments of the present disclosure. FIG. 2 shows a schematic diagram of the EUV device 100 in FIG. 1 emitting an EUV light beam L. Referring to FIG. For the purpose of simple description, in the second figure, the reference numerals of some components are omitted, and the reference numerals of the same components refer to the first figure.

In some embodiments of the present disclosure, as shown in FIG. 1 , an EUV device 100 includes an EUV light source 110 , a chamber 115 and a plurality of free radical sources 155 . As shown in FIG. 2 , the EUV light source 110 is configured to emit an EUV light beam L toward the chamber 115 . The free radical source 155 is located within the chamber 115 adjacent to the path P through which the EUV light beam L passes, wherein the free radical source 155 is arranged to emit a plurality of free radicals to the path P.

In some embodiments of the present disclosure, the EUV light source 110 includes a target droplet generator and a laser light source. The target drop generator is used to generate multiple metal target drops. Once the metal target droplet is generated, the laser light source emits high-power laser to the metal target droplet. A metal target droplet is excited by a high-power laser. Subsequently, when the excited metal target droplet returns to the ground state from the excited state, it will be able to emit an extreme ultraviolet beam L of a corresponding wavelength as shown in FIG. 2 .

For example, in some embodiments from the present disclosure, the material of the metal target droplet includes tin. After the tin is excited by the high-power laser, it will return to the ground state from the excited state, and will be able to emit an extreme ultraviolet beam L with a wavelength of about 13.5 nm.

When the composition of the EUV light source 110 includes a target droplet generator and a laser, when the EUV light source 110 emits the EUV light beam L into the chamber 115, correspondingly, some metal target droplets will remain in the Inside the chamber 115 .

Once the inside of the traditional extreme ultraviolet light equipment is polluted, the chamber must be opened for cleaning. In particular, once the metal target droplet emits EUV beams and returns to the ground state, the metal target droplet becomes solid and remains inside the chamber, which cannot be easily removed by cleaning gas. Since the inside of the chamber of the EUV device is in a vacuum environment during operation, both the vacuum breaking step before cleaning and the vacuum pumping step after cleaning require manpower and time costs.

However, the EUV light device 100 of the present disclosure has a plurality of free radical sources 155 , and the free radicals emitted by the free radical sources 155 can allow solid residual metal target droplets to combine with free radicals to transform into a liquid or a gaseous state. The liquid or gaseous metal target droplet can flow/move to a specific position in the chamber 115 , and the cleaning effect can be achieved in a vacuum environment without opening the chamber 115 .

In some embodiments of the present disclosure, the chamber 115 of the EUV device 100 is provided with a containing area 120 and two pumps 170 for pumping air. In some embodiments of the present disclosure, the accommodation area 120 includes an Illuminator 130 and a Projection optics box (POB) 135 . The EUV light source 110 emits the EUV light beam L into the light output device 130 through the light entrance 116 of the chamber 115 . The receiving area 120 is disposed inside the chamber 115 and has a vent hole 132 and a vent hole 136 for gas circulation. The pump 170 can use the vent hole 132 to extract the gas inside the light extractor 130 , so that the EUV beam L can travel inside the light extractor 130 in a vacuum environment. The pump 170 can draw out the gas inside the containing area 120 through the vent hole 132 and the vent hole 136 to realize a vacuum inside the containing area 120 . As shown in FIG. 1 and FIG. 2 , the EUV light beam L emitted by the EUV light source 110 can pass through the entrance 131 of the light extractor 130 and enter the interior of the light extractor 130 to generate a path P.

For the purpose of simple illustration, in FIG. 2 , unmarked arrows indicate the flow of gas inside the chamber 115 and the containing area 120 .

In some embodiments of the present disclosure, the EUV device 100 includes three pumps 170 . The pumps 170 located on opposite sides of the chamber 115 are respectively configured to extract the gas inside the light extractor 130 and the projection optical box 135 through the vent hole 132 and the vent hole 136 respectively. One of the pumps 170 is disposed adjacent to the inlet 131 and the vent hole 132 of the light extractor 130 so that the gas can be pumped out from the inlet 131 and the vent hole 132 . A pump 170 is disposed adjacent to the vent hole 136 of the projection optics box 135 so that gas can be drawn through the vent hole 136 . Another pump 170 is located in the wafer stage WSDGL, so the gas can also be pumped from the projection optical box 135 to the wafer stage WSDGL.

In some embodiments of the present disclosure, as shown in FIG. 2 , the two pumps 170 located on opposite sides of the chamber 115 can also discharge the gas inside the containing area 120 through the channel 160 . The gas discharged from the channel 160 will move to the mask table 165 and the mask 166 .

In FIG. 1 and FIG. 2 , a mirror 150A and a mirror 150B are disposed inside the optical device 130 . As shown in FIG. 2 , in some embodiments of the present disclosure, part of the EUV beam L does not enter the light output device 130 . The path P of the EUV beam L entering the light extractor 130 inside the light extractor 130 is indicated by a dotted line.

Specifically, in FIG. 2 , the path P of the EUV light beam L inside the light output device 130 first travels to the reflective surface of the reflective mirror 150A, then reflects to the reflective mirror 150B, and then is reflected by the reflective surface of the reflective mirror 150B to The reflection mirror 150G finally makes the path P reach the mask 166 by the reflection surface of the reflection mirror 150G. The path P of the EUV light beam L can be controlled by the mirror 150A, the mirror 150B and the mirror 150G.

It should be noted that the path P is only shown up to the arrival mask 166 for simplicity of illustration. In one or more embodiments of the present disclosure, the path P may be further transmitted to the projection optical box 135 through the reflection of the mask 166 , and then reflected by the mirror 150 in the projection optical box 135 to reach the wafer stage WSDGL. For the subsequent lithography process, in some embodiments of the present disclosure, the patterned side of the wafer disposed on the wafer stage WSDGL faces a mirror 150 in the projection optical box 135 in the direction of the arrow D. Referring to FIG.

Once the EUV light beam L enters the interior of the light output device 130 from the entrance 131, since the entrance 131 is substantially aligned with the reflection surface of the mirror 150A, the EUV beam L will be reflected by the reflection surface of the reflection mirror 150A, and travel along the path P . Through the arrangement of the reflection mirror 150A and the reflection mirror 150B inside the light emitter 130 , the direction in which the EUV light beam L is emitted to the projection optical box 135 can be controlled.

As mentioned above, in some embodiments of the present disclosure, the EUV light source 110 may include a target droplet generator and a high-power laser to emit an EUV beam L through the excited metal target droplet. At this time, as the EUV beam L enters the light extractor 130 , the metal target drop that generates the EUV beam L will also enter the light extractor 130 . Once the metal target drop emits the EUV beam L and returns to the ground state, the metal target drop becomes solid and remains in the light extractor 130 . Solid residual metal target droplets will not be easily removed from the light extractor 130 by the cleaning gas.

According to some embodiments of the present disclosure, the EUV device 100 further includes a free radical source 155 disposed in the chamber 115 . The free radical source 155 is disposed adjacent to the path P of the EUV beam L emitted by the EUV light source 110 . In addition, the reflecting mirror 150A and the reflecting mirror 150B are substantially disposed on the path P of the EUV light beam L traveling inside the light extractor 130 to control the progress of the EUV light beam L inside the light extractor 130 through reflection. Once the metal target droplets that generate the EUV beam L remain inside the containing area 120 , more solid metal target droplets usually accumulate on the reflective surfaces of the mirrors 150A and 150B for reflecting the EUV beam L. Since the EUV light beam L is reflected by the mirror 150A and the mirror 150B, if solid metal target droplets accumulate on the reflecting surface, the EUV beam L may deviate from the designed travel direction unexpectedly, thereby affecting the subsequent lithography process . For this, in some embodiments of the present disclosure, as shown in FIG. 1 and FIG. 2 , two free radical sources 155 are disposed in the accommodation area 120 and adjacent to the mirror 150A and the mirror 150B respectively.

Two free radical sources 155 are respectively disposed adjacent to the mirror 150A and the mirror 150B to provide free radicals to the reflecting surfaces of the mirror 150A and the mirror 150B. The provided free radicals can react with the solid metal target droplet remaining in the mirror 150A and the reflective mirror 150B, so that the remaining solid metal target droplet combines with the free radical and turns into a liquid or a gaseous state. In this way, the liquid or gaseous residual metal target drops can be dropped or removed from the mirrors 150A and 150B to achieve a cleaning effect, thereby reducing the impact on the reflection of the mirrors 150A and 150B.

In some embodiments of the present disclosure, the material of the metal target droplet includes tin, which can excite an extreme ultraviolet beam L with a wavelength of about 13.5 nm, and the free radical source 155 can emit hydrogen radicals or chlorine radicals. Hydrogen free radicals or chlorine free radicals can interact with solid tin metal target droplet to transform the tin metal target droplet into liquid or gaseous state. Specifically, in some embodiments, after free radicals interact with residual solid tin metal target droplets, the solid tin metal target droplets are transformed into gaseous tin hydride (SnH ₄ ), gaseous tin chloride ( SnCl ₄ ) or nano-sized liquid tin (hydrogen embrittlement, hydrogen embrittlement).

In some embodiments of the present disclosure, as shown in FIG. 1 and FIG. 2 , the accommodation area 120 includes a light output device 130 and a projection optical box 135 , wherein a channel 160 exists between the light output device 130 and the projection optical box 135 . In this way, once the EUV light source 110 emits the UV light beam, the EUV light beam L will be able to leave the channel 160 and reach the shield of the EUV light device 100 at the top of the path P through the reflection of the mirror 150A, the mirror 150B, and the mirror 150G. Cover Taiwan 165. The reticle station 165 may be provided with a reticle (reticle, or reticle) 166 .

In one or more embodiments of the present disclosure, the mask 166 may include a pattern for patterning, after the EUV light beam L exits the light emitter 130, it is reflected by the mirror 150G disposed in the channel 160 When reaching the mask 166 (shown as the path P in the second figure), the mask 166 will reflect the EUV light beam L into the projection optical box 135 again, and reflect it to the wafer by the reflector 150 in the projection optical box 135 The wafer stage (wafer stage) WSDGL is used for the wafer of the wafer stage WSDGL to perform lithography process.

In FIG. 1 and FIG. 2 , a free radical source 167 is provided adjacent to the mask table 165 and the mask 166 . The free radical source 167 is similar to the free radical source 155 previously described. Since the mask table 165 and the mask 166 are located at the top of the path P of the EUV light beam L, solid metal target droplets are likely to remain. Once solid metal target droplets remain on the mask 166 , it will affect the result of the subsequent wafer development process. Therefore, in some embodiments of the present disclosure, a free radical source 167 is provided adjacent to the mask stage 165 and the mask 166 to provide free radicals to the mask stage 165 and the mask 166, so that the remaining solid metal target The material droplet changes into a liquid state and falls, or the residual solid metal target droplet combines with free radicals and turns into a gaseous state and leaves the surface of the mask 166 to achieve a cleaning effect.

In some embodiments of the present disclosure, the mask 166 placed on the mask table 165 may not have a patterned pattern. In some embodiments of the present disclosure, the mask 166 is used for testing to confirm the contamination of the chamber 115 and the containing area 120 by the EUV light beam L emitted by the EUV light source 110 . At this time, do not open the free radical source 167, stop emitting free radicals to the mask table 165 and the mask 166, after a period of accumulation, take out the test mask 166, and confirm the solid metal target on the test mask 166 droplet residue. Since taking out the mask 166 has little effect on the vacuum inside the accommodation area 120 , it is possible to detect whether the EUV light source 110 is normal quickly and at a low cost. If there are still too many solid metal target droplets accumulated in the test mask 166, it indicates that the quality of the EUV light source 110 is poor, and it will bring more than a certain amount of metal target droplets into the container with the emission of the EUV light beam L. area 120 , thereby polluting the light extractor 130 of the containing area 120 , affecting the subsequent developing process. Accordingly, it will be possible to determine whether to replace the EUV light source 110 . Such a process does not need to destroy the vacuum environment already established in the EUV device 100 , which can save the overall cost and time.

In some embodiments of the present disclosure, as mentioned above, the mirror 150G is used to reflect the EUV beam L to the mask table 165 and the mask 166 . The mirror 150G and the radical source 155 corresponding to the mirror 150G are respectively disposed on opposite sides of the channel 160 . The free radical source 155 corresponding to the reflector 150G faces the reflective surface of the reflector 150G and provides free radicals, so that the solid metal target droplet remaining in the reflector 150G changes into a liquid state and falls, or the remaining solid metal target The material droplet combines with free radicals and transforms into a gaseous state and leaves the reflector 150G to achieve a cleaning effect. The mirror 150G may also be referred to as a G mirror (G-mirror).

In some embodiments of the present disclosure, as shown in FIG. 1 and FIG. 2 , a plurality of mirrors 150 may be disposed in the projection optical box 135 . After the EUV light beam L is reflected from the mask 166 , it will travel to the projection optical box 135 and be reflected by a plurality of mirrors 150 in the projection optical box 135 .

In FIG. 1 and FIG. 2 , the outlet of the projection optical box 135 is substantially connected to the light outlet 117 of the chamber 115 , and the light outlet 117 is connected to the wafer stage WSDGL for placing wafers. In this way, when the EUV light beam L enters the projection optical box 135, it will be reflected by a plurality of mirrors 150 inside the projection optical box 135, and the EUV beam L will come out from the light outlet 117, so that the pattern information with the mask 166 EUV light is irradiated onto the wafer on wafer stage WSDGL to pattern the wafer for a complete lithography process.

In some embodiments of the present disclosure, since the multiple reflectors 150 inside the projection optical box 135 are also located on the path P of the EUV beam L, one of the multiple reflectors 150 in the projection optical box 135 One or more of the aforementioned free radical sources 155 can be optionally provided to avoid residual solid metal target droplets.

In some embodiments of the present disclosure, one or more of the mirror 150A, the mirror 150B, and the mirror 150G may be further provided with a piezoelectric material 151 (piezoelectric material). The piezoelectric material 151 can be disposed on the opposite side of the reflective mirror 150A, the reflective mirror 150B or the reflective mirror 150G, or integrated inside the reflective mirror 150A, the reflective mirror 150B and the reflective mirror 150G. In this way, by supplying power to the piezoelectric material 151, the piezoelectric material 151 converts the power into pressure, and then shakes/vibrates the corresponding mirror 150A, mirror 150B, and mirror 150G, and further drops the remaining metal target. shake off. Residual metal target droplets can be easily shaken/vibrated from mirrors 150A, 150B, and 150G since they have been converted to liquid by free radicals from free radical source 155. .

Please refer to Figure 2 and Figure 3 at the same time. FIG. 3 shows a flowchart of a method 200 of operating an EUV device 100 according to some embodiments of the present disclosure. It should be noticed that the operation method 200 shown in FIG. 3 is only an embodiment of the present disclosure and should not be limited thereto.

In the process 210 of the operation method 200 , the EUV light source 110 of the EUV device 100 emits the EUV light beam L. As shown in FIG. The EUV beam L enters the interior of the light emitter 130 through the light entrance 116 of the chamber 115 and the entrance 131 of the light emitter 130 .

In some embodiments of the present disclosure, the material of the metal target droplet includes tin. After the tin is excited by the high-power laser, it will return to the ground state from the excited state, and will be able to emit an extreme ultraviolet beam L with a wavelength of about 13.5 nm.

Then, go to process 220 . In the process 220 , the EUV light beam L enters the light output device 130 , and travels along the path P after being reflected by the mirror 150A, the mirror 150B, and the mirror 150G. In one or more embodiments of the present disclosure, the path P may travel into the projection optics box 135 through the reflection of the mask 166 , and then be reflected by the mirror 150 in the projection optics box 135 to reach the wafer stage WSDGL.

Continuing with the process 220, in the process 230, for the reflector 150A, the reflector 150B and the reflector 150G located on the path P, a plurality of corresponding free radical sources 155 respectively reflect to the reflector 150A, the reflector 150B and the reflector 150G Surface emits free radicals. As mentioned above, the EUV light beam L tends to leave solid metal target droplets on the reflective surfaces of the mirror 150A, the mirror 150B, and the mirror 150G. By emitting free radicals towards the reflective surfaces of the reflective mirror 150A, reflective mirror 150B and reflective mirror 150G, the free radicals interact with the solid metal target droplet remaining on the reflective surface, so that the solid metal target droplet is transformed into a liquid or gaseous state, And it is easy to drop from the reflective surfaces of the reflective mirror 150A, the reflective mirror 150B and the reflective mirror 150G.

In some embodiments of the present disclosure, the material of the remaining solid metal target droplet is, for example, tin metal, and the free radicals emitted by the free radical source 155 are hydrogen free radicals or chlorine free radicals. Hydrogen radicals or chlorine radicals can interact with solid tin to transform tin into a liquid or gaseous state, but this does not limit the materials and types of metal target droplets and free radicals.

In some embodiments of the present disclosure, the free radical source 155 can be controlled to maintain the same emission rate of free radicals. In some embodiments of the present disclosure, the free radical source 155 can be controlled to regularly modulate the emission rate of free radicals in a period, or emit free radicals at an irregular rate.

In some embodiments of the present disclosure, as mentioned above, the piezoelectric material 151 is further disposed on the reflector 150A, the reflector 150B and the reflector 150G. In such an embodiment, following the process 230, power is provided to the piezoelectric material 151 of the mirror 150A, the mirror 150B, and the mirror 150G, and the piezoelectric material 151 converts the power into pressure, so that the mirror 150A, the mirror 150B, and the The reflection mirror 150G vibrates/vibrates, further shaking off the liquid metal target droplet on the reflection surface.

Please refer to Figure 2 and Figure 4 at the same time. FIG. 4 illustrates a flowchart of another method 300 of operating an EUV device 100 according to some embodiments of the present disclosure. It should be noted that the operation method 300 shown in FIG. 4 is only an embodiment of the present disclosure and should not be limited thereto.

In process 310 , the EUV light source 110 of the EUV device 100 emits the EUV beam L. The EUV beam L enters the interior of the light emitter 130 through the light entrance 116 of the chamber 115 and the entrance 131 of the light emitter 130 .

Continuing with the process 310, in the process 320, after the EUV light beam L enters the interior of the light emitter 130, it is reflected by the mirror 150A, the mirror 150B, and the mirror 150G, travels along the path P, and then is reflected on the mask table 165 The mask 166. In one or more embodiments of the present disclosure, the path P may travel into the projection optics box 135 through the reflection of the mask 166 , and then be reflected by the mirror 150 in the projection optics box 135 to reach the wafer stage WSDGL.

After the extreme ultraviolet light beam L is reflected to the mask 166 along the path P, it enters the process 330, and for the mirror 150A, the mirror 150B, and the mirror 150G located on the path P, a plurality of corresponding free radical sources 155 are respectively sent to the mirror 150A, reflective mirror 150B, and reflective surfaces of reflective mirror 150G emit free radicals. As mentioned above, the EUV light beam L tends to leave solid metal target droplets on the reflective surfaces of the mirror 150A, the mirror 150B, and the mirror 150G. By emitting free radicals toward the reflecting surfaces of the reflecting mirror 150A, the reflecting mirror 150B and the reflecting mirror 150G, the free radicals interact with the solid metal target droplets remaining on the reflecting surfaces, and when the solid metal target droplets are transformed into a liquid state, it is easy Fall off reflective surfaces.

In some embodiments of the present disclosure, when the material of the remaining solid metal target droplet is tin metal, the free radicals emitted by the free radical source 155 are hydrogen free radicals or chlorine free radicals. Hydrogen radicals or chlorine radicals can interact with solid tin to transform tin into a liquid or gaseous state, but this does not limit the materials and types of metal target droplets and free radicals.

In some embodiments of the present disclosure, the reflector 150A, the reflector 150B, and the reflector 150G may be provided with a piezoelectric material 151 to further shake off liquid metal target droplets on the reflective surface by supplying power. In some embodiments of the present disclosure, the rate at which each free radical source 155 emits free radicals can be controlled, and these are also included in one or more embodiments of the present disclosure.

In process 340, after the mask 166 receives the extreme ultraviolet light beam L, a free radical source 167 adjacent to the mask 166 is arranged to emit free radicals to the mask 166, so that the remaining solid metal target droplet is converted into a liquid state and Falling or remaining solid metal target droplets combine with free radicals and transform into gaseous state and leave the mask 166 to achieve the cleaning effect. A pattern for patterning may be included on the mask 166 . By removing the solid metal target drop remaining on the mask 166, it is possible to avoid unexpected lithography dislocation caused by the residual solid metal target drop after the mask 166 reflects the EUV beam L to the wafer stage WSDGL. or the pattern is damaged.

In some implementations of the present disclosure, based on the purpose of testing, the mask 166 may not be provided with patterns for patterning. After the process 330 , the mask 166 can be made to receive the EUV light beam L to confirm the degree of contamination inside the light extractor 130 of the receiving area 120 in the chamber 115 . If after the mirror 150A, the mirror 150B and the mirror 150G are treated by the free radical source 155, there are still a considerable amount of solid metal target droplets accumulated in the mask 166, which means that the optical device 130 needs to be cleaned, thereby opening the cavity. The interior of the chamber 115 is cleaned of the light extractor 130 . Since the mask 166 is taken out from the inside of the chamber 115, the vacuum environment inside the light emitter 130 and the projection optical box 135 will not be excessively affected. Compared with directly opening the chamber 115 to confirm whether cleaning is required, a mask for detection is provided. 166 to confirm internal contamination is a less costly and more efficient approach.

In the following description, the structures of the aforementioned radical sources 155, 167 will be explained.

Please refer to Figure 5. FIG. 5 shows a schematic diagram of a free radical source 155A according to some embodiments of the present disclosure. As shown in FIG. 5 , in some embodiments of the present disclosure, the free radical source 155A includes a gas supply 156 , a cavity 157 and a coil 158 . The cavity 157 is a unidirectional channel, and the coil 158 is arranged in the channel of the cavity 157 . In this way, the gas can flow from the inlet on one side of the cavity 157 to the outlet on the other side after passing through the coil 158 . Coils 158 are connected to respective controllers 158C. The controller 158C can be used to supply power to the coil 158 and adjust the amount of power provided. After the coil 158 is energized, the power consumed by it is converted into heat energy. That is, the coil 158 essentially acts as a heater.

The gas supplier 156 is capable of injecting the gas G1 toward the inlet of the cavity 157 . The gas G1 includes but not limited to a plurality of hydrogen molecules. After the hydrogen molecules enter the chamber 157 from the inlet, they are heated and converted into hydrogen radicals G2 . The free radicals G2 leave from the outlet of the chamber 157 . In other words, in FIG. 5 , the radical G2 of hydrogen flows in the direction originally supplied by the gas G1 of hydrogen gas molecules. In some embodiments of the present disclosure, the gas G1 includes chlorine gas molecules, and the corresponding free radicals G2 are chlorine free radicals.

Therefore, in some embodiments of the present disclosure, the free radicals G2 can exit from the outlet of the cavity 157 and reach the reflective surface of the mirror 150A, the mirror 150B, or the reflective mirror 150G, thereby interacting with the solid metal target remaining on the reflective surface. The action of the material droplet makes the remaining metal target droplet change into liquid or gaseous state.

Please refer to Figure 6. FIG. 6 shows a schematic diagram of a free radical source 155B according to other embodiments of the present disclosure. As shown in FIG. 6, the free radical source 155B is a remote plasma generator. The free radical source 155B includes a gas supply 156, a chamber 157' and a coil 159.

In Fig. 6, the cavity 157' is annular, and once the gas G1 provided by the gas supplier 156 enters the interior from an inlet of the cavity 157', the gas G1 will be available in the upper and lower sides of the cavity 157'. channel circulation. As shown in FIG. 3, the two sets of coils 159 substantially surround the upper and lower channels of the cavity 157'. The two sets of coils 159 are connected with high-frequency alternating current, which can induce the gas G1 and ionize the gas G1 into free radicals G2. When the gas G1 inside the cavity 157' is saturated with the free radicals G2, and the gas G1 is supplied from the inlet on one side of the cavity 157', the free radicals G2 will flow out from the outlet on the other side of the cavity 157'. As mentioned above, the gas G1 includes hydrogen molecules or chlorine molecules, and the free radical G2 includes hydrogen free radicals or chlorine free radicals.

In detail, the two sets of coils 159 are connected with high-frequency alternating current, which can generate a magnetic field inside the cavity 157', and the magnetic field has the direction C1 of the magnetic force line as indicated by the dotted line. The gas G1 and the ionized free radicals G2 are attracted by the magnetic field, and circulate in the cavity 157' along the gas direction C2, and flow out from an outlet of the cavity 157' after being saturated, so as to ensure that the free radical source 155B provides relatively clean free radical G2.

In this way, the free radical source 155B can provide the free radical G2 of hydrogen to the reflective surface of the reflective mirror 150A, the reflective mirror 150B or the reflective mirror 150G, thereby interacting with the solid metal target droplet remaining on the reflective surface, and making the remaining metal target The drop turns into a liquid or gaseous state.

In some embodiments of the present disclosure, in the above two examples of the free radical source 155A and the free radical source 155B, the gas supplier 156 can be set to supply the gas G1 at the same speed, so that the free radical G2 can be emitted to the reflective surface same rate. In some embodiments of the present disclosure, in the above two examples of the free radical source 155A and the free radical source 155B, the gas supplier 156 can be set to provide the gas G1 at an irregular rate, so that the free radical G2 can be generated at an irregular rate. Rate of emission onto reflective surfaces. The emission of the free radical G2 at an irregular rate can make the metal target droplets remaining on the reflective surface that have been transformed into a liquid or a gaseous state be more efficiently removed from the reflective surface.

It should be noted that the aspect of the free radical source 155A or the free radical source 155B disclosed above is only one of the multiple implementations of the present disclosure, and should not be used to limit the free radical source of the present disclosure. The free radical source 155 in FIGS. 1 and 2 may include, but not limited to, the free radical source 155A in FIG. 5 or the free radical source 155B in FIG. 6 . Other sources of free radicals capable of reacting with metal target droplets are also included in one or more embodiments of the present disclosure.

According to some embodiments of the present disclosure, an EUV device includes a chamber, an EUV light source, and a first free radical source. The EUV light source is configured to emit EUV beams into the chamber. The first free radical source is located in the chamber and arranged on the path of the EUV light beam. A first source of free radicals is used to launch a plurality of free radicals into the pathway.

In one or more embodiments of the present disclosure, the EUV device further includes a mirror. A reflector is located in the chamber and includes a reflective surface. The reflection mirror is arranged on the path of the EUV beam to reflect the EUV beam through the reflection surface. The first free radical source is arranged on the reflective mirror to emit free radicals to the reflective surface of the reflective mirror.

In some embodiments of the present disclosure, the extreme ultraviolet light device further includes a piezoelectric material. The piezoelectric material is arranged on the back of the reflector opposite to the reflective surface.

In one or more embodiments of the present disclosure, the extreme ultraviolet light device further includes a mask and a second free radical source. A mask is arranged at the bottom end of the path to receive the EUV beam. A second source of free radicals is positioned to emit a plurality of sources of free radicals toward the test mask.

According to some embodiments of the present disclosure, an operating method of an EUV device includes the following steps. An EUV light beam is emitted by an EUV light source. The EUV beam is reflected by the reflective surface of the mirror. A complex number of free radicals are emitted towards the reflective surface of the mirror by the free radical source.

In one or more embodiments of the present disclosure, the EUV light source includes a target droplet generator. The target drop generator is configured to generate a plurality of metal target drops. These free radicals react with the metal target droplet, causing the metal target droplet to transform into a liquid or a gaseous state.

In one or more embodiments of the present disclosure, a piezoelectric material is disposed on the mirror. The aforementioned operation method further includes the following steps. Power is supplied to the piezoelectric material of the mirror to shake the mirror.

According to some embodiments of the present disclosure, an operating method of an EUV device includes the following steps. An EUV light beam is emitted by an EUV light source. Reflect the EUV beam through the mask. A plurality of free radicals are emitted towards the mask by the first free radical source.

In one or more implementations of the present disclosure, the aforementioned operation method further includes the following procedures. The EUV beam is reflected to the mask by a mirror. A plurality of free radicals are emitted towards the mirror by a second free radical source.

In one or more embodiments of the present disclosure, the EUV light source includes a target droplet generator. The target drop generator is used for generating multiple metal target drops. These metal target droplets are excited to generate EUV beams. These free radicals react with the metal target droplet, causing the metal target droplet to transform into a liquid or a gaseous state.

It will be understood that not all advantages must be addressed in some embodiments of the present disclosure, that no particular advantage is required for all embodiments or examples, and that other embodiments or examples may provide different advantages.

The features of several embodiments or examples are summarized above so that those skilled in the art can better understand aspects of some implementations of the present disclosure. Those skilled in the art should understand that they can easily use some embodiments of the present disclosure as a basis for designing or modifying other processes and structures in order to achieve the same purpose and/or achieve the same advantages of the embodiments or examples described herein. Those skilled in the art should also realize that such equivalent structures do not depart from the spirit and scope of some embodiments of the present disclosure, and that the present disclosure can be made without departing from the spirit and scope of some embodiments of the present disclosure. Variations, substitutions and modifications of some of the embodiments.

100: extreme ultraviolet light equipment 110: extreme ultraviolet light source 115: chamber 116: light entrance 117: light outlet 120:Accommodating area 130: Light emitter 131: Entrance 132: ventilation hole 135:Projection optical box 136: ventilation hole 150, 150A, 150B, 150G: reflector 151:Piezoelectric material 155,155A,155B: free radical source 156: gas supplier 157,157': cavity 158: Coil 158C: Controller 159: Coil 160: channel 165: mask table 166: mask 167: Free Radical Source 170: pump C1: Direction of magnetic force lines C2: gas direction D: arrow G1: gas G2: free radicals L: extreme ultraviolet beam P: path WSDGL: wafer stage 200: How it works 210~230: Process 300: How it works 310~340: Process

Some embodiments of the present disclosure are better understood from the following detailed description when read with the accompanying drawings. It should be emphasized that, in accordance with industry standard practice, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. FIG. 1 is a schematic diagram of an EUV device according to some embodiments of the present disclosure. FIG. 2 shows a schematic diagram of the EUV device in FIG. 1 emitting an EUV beam. FIG. 3 is a flowchart illustrating a method of operation of an EUV device according to some embodiments of the present disclosure. FIG. 4 is a flowchart illustrating a method of operation of an EUV device according to some embodiments of the present disclosure. FIG. 5 shows a schematic diagram of a free radical source according to some embodiments of the present disclosure. FIG. 6 shows a schematic diagram of a free radical source according to other embodiments of the present disclosure.

100: extreme ultraviolet light equipment

110: extreme ultraviolet light source

130: Light emitter

135:Projection optical box

150A, 150B, 150G: reflector

151:Piezoelectric material

155: Free radical source

165: mask table

166: mask

167: Free Radical Source

170: pump

WSDGL: wafer stage

L: extreme ultraviolet light

P: path

D: arrow

Claims (10)

An extreme ultraviolet light device, comprising: a chamber; an extreme ultraviolet light source emitting an extreme ultraviolet light beam into the chamber; and a first free radical source located in the chamber and adjacent to a passage through which the extreme ultraviolet light beam passes. On the path, wherein the first free radical source is arranged to emit a plurality of free radicals to the path; a mirror, located in the chamber and including a reflective surface, wherein the mirror is arranged on the path of the EUV beam, To reflect the EUV beam through the reflective surface, the first free radical source is adjacent to the reflective mirror and disposed to emit the free radicals toward the reflective surface of the reflective mirror. The EUV device as claimed in claim 1, wherein the first free radical source comprises: a gas source; a channel having an opposite inlet and an outlet, wherein the gas source is disposed at the inlet and configured to inject gas into the channel; and a coil disposed between the inlet and the outlet of the channel, wherein the coil is configured to be energized such that the gas passing through the coil is converted into the free radicals. The EUV device as claimed in claim 1, further comprising a piezoelectric material, wherein the piezoelectric material is disposed on the reflector opposite to the on the back side of the reflective surface. The extreme ultraviolet light device as claimed in claim 1, further comprising: a shield arranged at the top of the path to reflect the extreme ultraviolet light beam; and a second free radical source arranged to emit a plurality of radicals toward the shield free radicals. An operation method of extreme ultraviolet light equipment, comprising: emitting an extreme ultraviolet light beam through an extreme ultraviolet light source; reflecting the extreme ultraviolet light beam through a reflective surface of a reflector, wherein a piezoelectric material is arranged on the reflector; through a free The radical source emits a plurality of free radicals to the reflective surface of the reflective mirror; and provides power to the piezoelectric material of the reflective mirror to vibrate the reflective mirror. The operating method as described in claim 5, wherein the EUV light source includes a target drop generator, the target drop generator is configured to generate a plurality of metal target drops, and the free radicals are configured to interact with the metal targets The metal target droplets react to transform the metal target droplets into a liquid or gaseous state. The operation method as described in claim 5, wherein emitting the free radicals comprises: Gas is provided through a coil which is energized so that the gas is converted into the free radicals. An operation method of an extreme ultraviolet light device, comprising: emitting an extreme ultraviolet light beam through an extreme ultraviolet light source; reflecting the extreme ultraviolet light beam through a mask; emitting a plurality of free radicals to the mask through a first free radical source; A reflective mirror reflects the EUV beam to the shield; and emits a plurality of free radicals to the reflective mirror through a second free radical source. The operation method as described in claim 8, wherein the mask does not have a pattern for patterning, the operation method further comprises: a plurality of metal target droplets receiving the EUV light beam through the mask. The operating method as described in claim 8, wherein the extreme ultraviolet light source includes a target drop generator, the target drop generator is configured to generate a plurality of metal target drops, and the free radicals are configured to interact with the metal targets The droplet reaction turns the metal target droplets into a liquid or gaseous state.

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