TWI782747B - Thermal profile monitoring wafer and methods of monitoring temperature - Google Patents
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- H01L22/10—Measuring as part of the manufacturing process
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Abstract
Description
本揭示一般涉及用於量測和監測基座溫度的設備和方法。具體言之,本揭示的實施例涉及用於熱分佈監測的晶圓以及監測處理腔室的熱分佈的方法。The present disclosure generally relates to apparatus and methods for measuring and monitoring susceptor temperature. In particular, embodiments of the present disclosure relate to wafers for thermal profile monitoring and methods of monitoring thermal profile of processing chambers.
當前,TC晶圓用於量測處理腔室中基座的溫度。量測溫度的過程可能是耗時的,而導致有長的前置時間來打開腔室、將腔室泵回(pump-down)到處理條件及執行溫度量測。隨著產量需求的增加,溫度監測過程引起的延遲成為更大的問題。Currently, TC wafers are used to measure the temperature of susceptors in processing chambers. The process of measuring temperature can be time consuming, resulting in long lead times to open the chamber, pump-down the chamber to process conditions, and perform the temperature measurement. As throughput demands increase, delays caused by the temperature monitoring process become more of an issue.
對於用於決定基座溫度的設備與方法在處理中減少延遲是有其需求的。There is a need for an apparatus and method for determining susceptor temperature that reduces delays in processing.
本揭示的一個或更多個實施例係針對熱監控器,其包括基板、無線通信控制器和電池。該基板具有頂表面和底表面。至少一個攝影機定位在基板的底表面上。該至少一個攝影機具有一視野。電池連接到該至少一個攝影機和該無線通信控制器。該熱監控器具有足以穿過處理腔室的狹縫閥之總厚度。One or more embodiments of the present disclosure are directed to a thermal monitor that includes a substrate, a wireless communication controller, and a battery. The substrate has a top surface and a bottom surface. At least one camera is positioned on the bottom surface of the substrate. The at least one camera has a field of view. A battery is connected to the at least one camera and the wireless communication controller. The thermal monitor has an overall thickness sufficient to pass through the slit valve of the processing chamber.
本揭示的另外的實施例係針對熱監控器,其包括基板、複數個高解析度熱成像攝影機、無線通信控制器、電池和微控制器。基板具有頂表面和底表面。複數個高解析度熱成像攝影機至少定位在基板的底表面上。每個高解析度熱成像攝影機產生代表溫度變化的顏色梯度圖像。每個高解析度熱成像攝影機具有視野,且高解析度熱成像攝影機的視野重疊,以提供完整圖像。無線通信控制器經配置而透過Wi-Fi或藍牙標準中的一個或更多個來通信。電池連接到複數個高解析度熱成像攝影機和無線通信控制器。微控制器連接到該無線通信控制器、攝影機和電池。微處理器經配置而處理自複數個高解析度熱成像攝影機接收的資料及透過無線通信控制器傳輸該經處理的資料。熱監控器具有足以穿過處理腔室的狹縫閥之總厚度。複數個攝影機、電池和無線通信控制器可在約100℃至約500℃的溫度範圍內操作。Additional embodiments of the present disclosure are directed to a thermal monitor that includes a substrate, a plurality of high-resolution thermal imaging cameras, a wireless communication controller, a battery, and a microcontroller. The substrate has a top surface and a bottom surface. A plurality of high resolution thermal imaging cameras are positioned on at least the bottom surface of the substrate. Each high-resolution thermal imaging camera produces a color gradient image representing temperature changes. Each high-resolution thermal imaging camera has a field of view, and the fields of view of the high-resolution thermal imaging cameras overlap to provide a complete image. The wireless communication controller is configured to communicate via one or more of Wi-Fi or Bluetooth standards. The battery is connected to a plurality of high-resolution thermal imaging cameras and a wireless communication controller. A microcontroller is connected to the wireless communication controller, camera and battery. The microprocessor is configured to process data received from the plurality of high-resolution thermal imaging cameras and transmit the processed data through the wireless communication controller. The thermal monitor has an overall thickness sufficient to pass through the slit valve of the processing chamber. The plurality of cameras, batteries and wireless communication controller are operable in a temperature range of about 100°C to about 500°C.
本揭示另外的實施例係針對監測處理腔室中的晶圓支撐件溫度的方法。該方法包括將熱監控器定位在複數個升舉銷上。熱監控器具有基板,該基板具有至少一個攝影機、無線通信控制器和電池。至少一個攝影機定位在基板的底表面上且具有一視野。電池連接到該至少一個攝影機和無線通信控制器。複數個升降銷支撐熱監控器,以便在晶圓支撐件和熱監控器的底表面之間有一縫隙。使用熱監控器上的至少一個攝影機來量測晶圓支撐件的溫度。Additional embodiments of the present disclosure are directed to methods of monitoring the temperature of a wafer support in a processing chamber. The method includes positioning a thermal monitor on a plurality of lift pins. A thermal monitor has a base plate with at least one camera, a wireless communication controller, and a battery. At least one camera is positioned on the bottom surface of the substrate and has a field of view. A battery is connected to the at least one camera and the wireless communication controller. A plurality of lift pins support the thermal monitor such that there is a gap between the wafer support and the bottom surface of the thermal monitor. The temperature of the wafer support is measured using at least one camera on the thermal monitor.
在描述本揭示的幾個示例性實施例之前,應當理解,本揭示不限於以下說明書中闡述的構造或處理步驟之細節。本揭示能夠具有其他實施例且能夠以各種方式實施或執行。Before describing several exemplary embodiments of the disclosure, it is to be understood that the disclosure is not limited to the details of construction or process steps set forth in the following specification. The disclosure is capable of other embodiments and of being practiced or carried out in various ways.
本揭示的實施例提供例如裝配有一個或更多個熱成像攝影機的鋁/玻璃的模擬(mock)晶圓。與熱成像攝影機相關聯的控制電子裝置也可包含於模擬晶圓上。本揭示的一些實施例有利地提供了可以與標準處理腔室一起使用的溫度量測裝置。Embodiments of the present disclosure provide, for example, a mock wafer of aluminum/glass equipped with one or more thermal imaging cameras. Control electronics associated with the thermal imaging camera may also be included on the analog die. Some embodiments of the present disclosure advantageously provide a temperature measurement device that can be used with standard processing chambers.
熱成像晶圓可以透過移送腔室(裝載閘)而裝載到處理腔室中。本揭示的一些實施例有利地提供熱成像部件以量測可以裝配在標準裝載閘中的支撐基座的溫度。熱成像晶圓可以收集來自各種半導體處理設備的基座、處理套組、靶材和噴頭的熱圖像資料。資料可以無線傳輸到控制系統。無線傳輸可以藉由任何合適的技術發生,包括但不限於藍牙(Bluetooth®)和Wi-Fi。在一些實施例中,有利地調整熱成像晶圓的尺寸以被包含於具有用於處理的晶圓的匣(cassette)中,使得熱成像晶圓和待處理的基板一起定位於系統中,從而減小對產量的影響。Thermally imaged wafers can be loaded into the processing chamber through a transfer chamber (load gate). Some embodiments of the present disclosure advantageously provide a thermal imaging component to measure the temperature of a support base that can fit in a standard load lock. Thermal imaging wafers can collect thermal image data from susceptors, process stacks, targets and showerheads of various semiconductor processing equipment. Data can be transmitted wirelessly to the control system. Wireless transmission may occur via any suitable technology, including but not limited to Bluetooth® and Wi-Fi. In some embodiments, the thermal imaging wafer is advantageously sized to be contained in a cassette with wafers for processing such that the thermal imaging wafer is positioned in the system with the substrate to be processed, thereby Minimize impact on yield.
圖1和圖2繪示熱監控器100的實施例。熱監控器100的主體包括基板110。如此方式所使用的,基板110是其他部件(如攝影機)定位於其上的表面或部件。基板110可以由任何合適的材料製成,包括但不限於矽、鋁、石英、玻璃和陶瓷。雖然圖式中所示為圓形基板110,但發明所屬領域中具有通常知識者將理解,這僅僅是一種可能的基板形狀,且其他形狀亦在本揭示的範圍內。1 and 2 illustrate an embodiment of a
基板110包括頂表面112、底表面114和側壁116。在圖1所示的實施例中,熱監控器100經倒置,使得基板110的底表面114是可見的。基板110具有一厚度,其被界定為頂表面112和底表面114之間的距離。如果頂表面112和底表面114實質平坦且平行,則基板110的厚度實質與側壁116的垂直尺寸相同。
至少一個攝影機120定位於基板110的底表面114上。圖1所示的實施例具有五個攝影機120;然而,發明所屬領域中具有通常知識者將理解,可以有任何合適數量的攝影機。在一些實施例中,定位於基板110的底表面114上有一個攝影機120。在一些實施例中,有兩個、三個、四個、五個、六個、七個、八個、九個、十個、十一個、十二個、十五個、二十個、二十五個或更多個攝影機120定位在基板110的底表面114或其他部分上。例如,如圖3所示,基板110具有定位於基板110的底表面114、頂表面112和側壁116上的複數個攝影機120。在一些實施例中,有多於或等於2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19或20個攝影機120在基板110上。At least one
攝影機120可以是能夠在大於約50℃的溫度下操作的任何合適的攝影機。在一些實施例中,攝影機120包括高解析度熱成像攝影機。在一些實施例中,攝影機120可以獲得可見光、紫外線(UV)、近紅外線(NIR)、短波長紅外線(SWIR)、中波長紅外線(MWIR)、長波長紅外線(LWIR)或遠紅外線(FIR)的圖像。在一些實施例中,攝影機120可經操作以在電磁光譜的長波長紅外線(LWIR)區域拍攝圖像。例如,攝影機120可經操作以擷取在約8至約15μm範圍內波長的光。在一些實施例中,攝影機120可經操作以擷取光譜的LWIR和FIR區域中的波長,例如波長在約8至約1000μm範圍內。
攝影機120可以是任何合適的尺寸,例如取決於可用於將熱監控器100插入處理腔室的空間量。攝影機120的尺寸也可能影響攝影機的解析度。較小的攝影機具有較少可用於成像部件的物理空間。術語「高解析度」用於描述在約100mm2
的面積中具有多於或等於約3000個像素的成像陣列的攝影機。在一些實施例中,攝影機是在約100mm2
的面積中具有多於或等於約3500、4000或4500像素的高解析度攝影機。
在一些實施例中,攝影機120的熱敏感性小於約200mK。在這方面所使用的術語「熱敏感性」是指攝影機120的電子裝置能夠量測小至200milli-Kelvin的溫差。在一些實施例中,攝影機120的熱敏感性小於或等於約150mK、100mK、75mK或50mK。In some embodiments, the thermal sensitivity of
在一些實施例中,攝影機120產生代表溫度變化的顏色梯度圖像。例如,受試物(subject)的相對較冷的溫度區域可由藍色代表,而受試物的相對較熱的溫度區域可由紅色代表,其中由中間的顏色代表冷熱區域之間的溫度梯度。攝影機120可以能夠產生彩色圖像,或者可藉由分析攝影機所拍攝的圖像資料之單獨的控制器或處理器來產生彩色圖像。In some embodiments,
每個攝影機120具有視野122。可以調整每個攝影機的視野122,使得個別視野122沒有重疊或者使得視野122有重疊。如圖3所示,重疊視野122可藉由將單獨的圖像組合(如拼接(stitching))在一起以形成單個圖像來允許晶圓支撐件160或處理腔室的完整圖像。Each
在圖2所示的實施例中,每個攝影機120具有不重疊的視野122。所示的攝影機120具有彼此對準的視野122,使得整個晶圓支撐件160被複數個攝影機120觀察到。在一些實施例中,視野122不重疊,且在攝影機視野之間存在縫隙,使得可以看到晶圓支撐件160的局部視圖。In the embodiment shown in FIG. 2 , each
攝影機120的視野122可以與圖2所示的實質相同(如相同的角度和相對方向)。所示的所有攝影機120具有向下朝向晶圓支撐件160的視野122。在一些實施例中,複數個攝影機120中的各者具有不同的視野,允許監測與基板110不同的方向。例如,在圖3所示的實施例中,攝影機120的部分攝影機具有指向不同方向及具有與其他攝影機120不同的角度之視野122。這可以用於形成處理腔室的處理區域的三維溫度圖。The field of
熱監控器100包括無線通信控制器130。無線通信控制器130可以透過連接件135而連接到攝影機120和電池140。如圖1和圖2所示,連接件135可以在基板110的相同側上或穿過基板110。圖示中所示的連接順序僅僅為代表性的,不應被視為指示特定組合和電路連接。
無線通信控制器130可以是可以無線傳輸來自處理腔室內部的資料之任何部件。無線通信協議可以是任何合適類型的通信處理。通信處理可以使用通信標準,例如Wi-Fi或藍牙。The
熱監控器100亦包括為攝影機120和無線通信控制器130供電的電池140。電池140透過連接件135連接到攝影機120和無線通信控制器130。電池140可以是能夠提供足夠電力來操作攝影機120和無線通信控制器130及使用電力的熱監控器100上的任何其他部件(如微控制器或微處理器)的任何合適的電池。合適的電池包括但不限於手機兼容電源供應、鋰離子電池、鋰聚合物電池和鹼性電池。The
在一些實施例中,如圖2所示,熱監控器100進一步包括連接到無線通信控制器130、攝影機120和電池140的微控制器150。如以這種方式使用,「微控制器」包括基於韌體的微控制器和基於軟體的微處理器。微控制器150是能夠控制攝影機120和無線通信控制器130的任何部件。某些實施例的微控制器150能夠分析或處理自攝影機120接收的資料,並透過無線通信控制器130傳輸經處理的資料。在一些實施例中,無線通信控制器130是在微控制器150的一個組成部件。在一些實施例中,微控制器150經配置而處理自至少一個攝影機120接收的資料且透過無線通信控制器130傳輸該經處理的資料。一些實施例的微控制器150係由電池140供電。在一些實施例中,微控制器150具有與電池140分離的電源。In some embodiments, as shown in FIG. 2 , the
參考圖3,本揭示的一些實施例係針對監測處理腔室200中的晶圓支撐件160溫度的方法。處理腔室200包括腔室壁202,腔室壁202具有底壁203和側壁204。定位於腔室壁202上的蓋件205包圍處理體積206。Referring to FIG. 3 , some embodiments of the present disclosure are directed to a method of monitoring the temperature of a
晶圓支撐件160(亦稱為基板支撐件)定位於處理腔室200的處理體積206內。晶圓支撐件160包括軸161和至少一個熱元件162。軸161穿過處理腔室200的底壁203中的開口163且連接到馬達164。馬達164能夠旋轉晶圓支撐件160且使晶圓支撐件160在z軸上移動。波紋管166形成繞底壁203中的開口163的真空緊密密封件。A wafer support 160 (also referred to as a substrate support) is positioned within the
處理腔室亦可以包括氣體分配組件170,氣體分配組件170可以如圖所示定位於蓋件205附近,或者定位於處理體積206內的其他位置中。氣體分配組件170經配置而使至少一個活性氣體或惰性氣體流入處理體積206。氣體分配組件170通常與晶圓支撐件160間隔開。The processing chamber may also include a
熱監控器100定位在處理腔室200中的複數個升舉銷180上。升舉銷180的數量可以是發明所屬領域中具有通常知識者所理解的任何合適的數量。圖4的實施例繪示兩個升舉銷180;然而,發明所屬領域中具有通常知識者將理解,通常有三個或更多個升舉銷180來支撐熱監控器100或用於處理的晶圓。The
熱監控器100藉由機器人185經由狹縫閥186而被帶入處理體積206。機器人185和升舉銷180可以由控制器220控制,以協調升舉銷180和機器人185的移動。
機器人185將熱監控器100沉積在升舉銷上,使得在晶圓支撐件160的頂表面168和熱監控器100的底表面114之間存在有縫隙182。縫隙182可以是任何合適的尺寸,這取決於例如升舉銷180的長度和攝影機120的視野122。在一些實施例中,縫隙大於約1英吋、2英吋、3英吋或4英吋。The
可以使用熱監控器100的攝影機120來量測晶圓支撐件160或晶圓支撐件160頂表面168的溫度。在一些實施例中,攝影機120產生代表晶圓支撐件160上的溫度變化的顏色梯度圖像。自攝影機120接收的資料可以透過無線通信控制器130直接傳送到處理腔室200外的系統以用於進一步處理。在一些實施例中,自攝影機120接收的資料由微控制器150處理,及經處理的資料透過無線通信控制器130傳輸。The temperature of the
在一些實施例中,評估經處理的顏色梯度圖像以決定晶圓支撐件160的溫度變化。可以基於經處理的資料改變晶圓支撐件160的局部溫度,以減小或增加晶圓支撐件160中的溫度變化。例如,控制器220可以評估資料或微控制器150對資料評估的動作(act),及可以增加或減少晶圓支撐件160中的熱元件162的功率。晶圓支撐件160中的多區域熱元件系統可以允許對溫度和熱變化的精確標點(pinpoint)控制。In some embodiments, the processed color gradient image is evaluated to determine the temperature variation of the
在量測溫度和任何資料處理之後,將熱監控器100自處理腔室200的處理體積206移除。熱監控器100可以藉由機器人185經由狹縫閥186移除。在一些實施例中,升舉銷180沒有降低熱監控器100以接觸晶圓支撐件160。換句話說,一些實施例的升舉銷180保持晶圓支撐件160的頂表面168和熱監控器100上的任何部件之間的距離。After measuring the temperature and any data processing, the
包括其上所有部件(如電池、通信控制器、攝影機)的熱監控器100的厚度足夠小以穿過狹縫閥186。在一些實施例中,熱監控器100具有小於或等於約1英吋的總厚度。The thickness of the
包括定位於其上的任何部件(如攝影機120、無線通信控制器130、電池140和微控制器150)的熱監控器100可在約50℃至約500℃範圍內的溫度下操作。在一些實施例中,熱監控器100及其上的任何部件可在大於或等於約100℃、150℃、200℃或250℃的溫度下操作。
量測晶圓支撐件的溫度分佈的過程可以相對較快。該整個過程( 將熱監控器裝載入處理腔室中、量測溫度分佈及移除熱監控器)可以在少於約一分鐘的時間內完成。在一些實施例中,整個過程發生在約5至約30秒或約10至約20秒的範圍內。The process of measuring the temperature distribution of the wafer support can be relatively fast. The entire process (loading the thermal monitor into the processing chamber, measuring the temperature distribution, and removing the thermal monitor) can be completed in less than about one minute. In some embodiments, the entire process occurs within a range of about 5 to about 30 seconds or about 10 to about 20 seconds.
在本說明書中,「一個實施例」、「某些實施例」、「一個或更多個實施例」或「實施例」的引用是指與該實施例結合描述的特定特徵、結構、材料或特性包含於本揭示的至少一個實施例中。因此,整個說明書中各個地方的用語如「在一個或更多個實施例中」、「在某些實施例中」、「在一個實施例中」或「在一實施例中」的出現不一定代表本揭示的相同實施例。此外,特定特徵、結構、材料或特性可以在一個或更多個實施例中以任何合適的方式結合。In this specification, reference to "one embodiment," "certain embodiments," "one or more embodiments," or "an embodiment" refers to a particular feature, structure, material, or embodiment described in connection with that embodiment. Features are included in at least one embodiment of the present disclosure. Thus, appearances of phrases such as "in one or more embodiments," "in some embodiments," "in one embodiment," or "in an embodiment" in various places throughout the specification do not necessarily Represents the same embodiment of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.
雖然已經參考特定實施例描述了本揭示案,但應當理解,這些實施例僅僅是本揭示的原理和應用的說明。對於發明所屬領域中具有通常知識者所彰顯的是,可以在不背離本揭示的精神和範圍下對本揭示的方法和設備進行各種修改和變化。因此,本揭示旨在包括落於所附專利申請範圍及其等效物的範圍內的修改和變化。While the disclosure has been described with reference to specific embodiments, it should be understood that these embodiments are merely illustrative of the principles and applications of the disclosure. It will be apparent to those having ordinary skill in the art to which the invention pertains that various modifications and changes can be made in the disclosed methods and apparatus without departing from the spirit and scope of the disclosure. Accordingly, it is intended that the present disclosure embrace modifications and variations that come within the scope of the appended patent applications and their equivalents.
100:熱監控器 110:基板 112:頂表面 114:底表面 116:側壁 120:攝影機 122:視野 130:無線通信控制器 135:連接件 140:電池 150:微控制器 160:晶圓支撐件 161:軸 162:熱元件 163:開口 164:馬達 166:波紋管 168:頂表面 170:氣體分配組件 180:升舉銷 182:縫隙 185:機器人 186:狹縫閥 200:處理腔室 202:腔室壁 203:底壁 204:側壁 205:蓋件 206:處理體積 220:控制器100: thermal monitor 110: Substrate 112: top surface 114: bottom surface 116: side wall 120: camera 122: Vision 130: Wireless communication controller 135: connector 140: battery 150: microcontroller 160: Wafer support 161: axis 162: thermal element 163: opening 164: motor 166: Bellows 168: top surface 170: gas distribution components 180:Lift pin 182: Gap 185: Robot 186: Slit valve 200: processing chamber 202: chamber wall 203: bottom wall 204: side wall 205: cover 206: Processing volume 220: controller
本揭示之特徵已簡要概述於前,並在以下有更詳盡之討論,可以藉由參考所附圖式中繪示之本案實施例以作瞭解。然而,值得注意的是,所附圖式僅繪示了本揭示的典型實施例,而由於本揭示可允許其他等效之實施例,因此所附圖式並不會視為本揭示範圍之限制。The features of the present disclosure, briefly summarized above and discussed in more detail below, can be understood by reference to the embodiments of the present invention which are illustrated in the accompanying drawings. It is worth noting, however, that the appended drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of the scope of the disclosure since the disclosure may allow other equivalent embodiments .
圖1繪示根據本揭示的一個或更多個實施例的熱監控器的透視圖;FIG. 1 illustrates a perspective view of a thermal monitor according to one or more embodiments of the present disclosure;
圖2繪示根據本揭示的一個或更多個實施例的熱監控器的截面圖;Figure 2 illustrates a cross-sectional view of a thermal monitor according to one or more embodiments of the present disclosure;
圖3繪示根據本揭示的一個或更多個實施例的熱監控器的截面圖;及Figure 3 illustrates a cross-sectional view of a thermal monitor according to one or more embodiments of the present disclosure; and
圖4繪示根據本揭示的一個或更多個實施例具有熱監控器的處理腔室的截面圖。4 illustrates a cross-sectional view of a processing chamber with a thermal monitor according to one or more embodiments of the present disclosure.
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無Domestic deposit information (please note in order of depositor, date, and number) none
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無Overseas storage information (please note in order of storage country, organization, date, and number) none
112:頂表面 112: top surface
114:底表面 114: bottom surface
116:側壁 116: side wall
120:攝影機 120: camera
122:視野 122: Vision
160:晶圓支撐件 160: Wafer support
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030218741A1 (en) * | 2002-05-22 | 2003-11-27 | Applied Materials Israel Ltd | Optical inspection system with dual detection heads |
US6820028B2 (en) * | 2002-11-04 | 2004-11-16 | Brion Technologies, Inc. | Method and apparatus for monitoring integrated circuit fabrication |
US7233841B2 (en) * | 2002-04-19 | 2007-06-19 | Applied Materials, Inc. | Vision system |
US20090014657A1 (en) * | 2007-05-01 | 2009-01-15 | Honeywell International Inc. | Infrared fire detection system |
US20140192840A1 (en) * | 2013-01-07 | 2014-07-10 | Kla-Tencor Corporation | High temperature sensor wafer for in-situ measurements in active plasma |
US20140374602A1 (en) * | 2013-06-20 | 2014-12-25 | Excelitas Technologies Corp. | Illumination Device with Integrated Thermal Imaging Sensor |
US20160088287A1 (en) * | 2014-09-22 | 2016-03-24 | Samsung Electronics Company, Ltd. | Image stitching for three-dimensional video |
WO2016069808A1 (en) * | 2014-10-31 | 2016-05-06 | Watlow Electric Manufacturing Company | Thermal dynamic response sensing systems for heaters |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8812957D0 (en) * | 1988-06-01 | 1988-10-05 | Thorn Emi Electronics Ltd | Thermal imaging |
US5182624A (en) * | 1990-08-08 | 1993-01-26 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector fet array |
US6926440B2 (en) * | 2002-11-01 | 2005-08-09 | The Boeing Company | Infrared temperature sensors for solar panel |
US9048270B2 (en) | 2007-03-08 | 2015-06-02 | Joseph M. Wander | Apparatus and method for heating semiconductor wafers via microwaves |
US8104342B2 (en) | 2007-02-23 | 2012-01-31 | Kla-Tencor Corporation | Process condition measuring device |
KR101734963B1 (en) * | 2010-07-05 | 2017-05-12 | 삼성전자주식회사 | Imaging device including a plurality of imaging modules |
JP5964626B2 (en) * | 2012-03-22 | 2016-08-03 | 株式会社Screenホールディングス | Heat treatment equipment |
US9440844B2 (en) * | 2012-04-02 | 2016-09-13 | Semiconductor Components Industries, Llc | Optical and infrared imaging system |
US20150060013A1 (en) * | 2013-09-05 | 2015-03-05 | Applied Materials, Inc. | Tunable temperature controlled electrostatic chuck assembly |
US9831111B2 (en) * | 2014-02-12 | 2017-11-28 | Applied Materials, Inc. | Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck |
-
2017
- 2017-08-09 US US15/672,886 patent/US10651095B2/en active Active
- 2017-08-10 WO PCT/US2017/046208 patent/WO2018031716A1/en active Application Filing
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-
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7233841B2 (en) * | 2002-04-19 | 2007-06-19 | Applied Materials, Inc. | Vision system |
US20030218741A1 (en) * | 2002-05-22 | 2003-11-27 | Applied Materials Israel Ltd | Optical inspection system with dual detection heads |
US6820028B2 (en) * | 2002-11-04 | 2004-11-16 | Brion Technologies, Inc. | Method and apparatus for monitoring integrated circuit fabrication |
US20090014657A1 (en) * | 2007-05-01 | 2009-01-15 | Honeywell International Inc. | Infrared fire detection system |
US20140192840A1 (en) * | 2013-01-07 | 2014-07-10 | Kla-Tencor Corporation | High temperature sensor wafer for in-situ measurements in active plasma |
US20140374602A1 (en) * | 2013-06-20 | 2014-12-25 | Excelitas Technologies Corp. | Illumination Device with Integrated Thermal Imaging Sensor |
US20160088287A1 (en) * | 2014-09-22 | 2016-03-24 | Samsung Electronics Company, Ltd. | Image stitching for three-dimensional video |
WO2016069808A1 (en) * | 2014-10-31 | 2016-05-06 | Watlow Electric Manufacturing Company | Thermal dynamic response sensing systems for heaters |
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