TWI782084B - Optoelectronic device and adaptive illumination system using the same - Google Patents
Optoelectronic device and adaptive illumination system using the same Download PDFInfo
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Abstract
Description
本發明一般而言係關於發光元件,且更特定而言係關於一種使用發光元件之光電子元件及適應性照明系統。The present invention relates generally to light emitting elements, and more particularly to an optoelectronic element and adaptive lighting system using light emitting elements.
發光二極體(「LED」)通常在各種應用中用作光源。LED比傳統光源更具能量效益,從而提供比白熾燈及螢光燈(舉例而言)高得多之能量轉換效率。此外,LED將較少熱輻射至經照明區中且提供比傳統光源大的對亮度、發光顏色及光譜之一控制寬度。此等特性使LED成為對於範圍介於自室內照明至汽車光照之各種光照應用的一極好選擇。Light emitting diodes ("LEDs") are commonly used as light sources in a variety of applications. LEDs are more energy efficient than traditional light sources, providing much higher energy conversion efficiencies than incandescent and fluorescent lamps, for example. In addition, LEDs radiate less heat into the illuminated area and provide a greater width of control over brightness, emission color, and spectrum than traditional light sources. These characteristics make LEDs an excellent choice for a variety of lighting applications ranging from interior lighting to automotive lighting.
因此,需要利用LED優於傳統光源之優點來達成較大穩健性及經增加功能性之經改良固態光照設計。Accordingly, there is a need for improved solid-state lighting designs that take advantage of the advantages of LEDs over traditional light sources to achieve greater robustness and increased functionality.
根據本發明之態樣,提供一種設備,該設備包含:一分段式發光二極體(LED)晶片,其具有由形成於該分段式LED晶片上之溝槽分開且配置於複數個區段中之複數個LED,每一區段包含至少一個第一LED及至少一個第二LED;及一控制器,其經組態以:將一正向偏壓施加至該等第一LED中之每一者;將一逆向偏壓施加至該等第二LED中之每一者;且基於由任一區段中之該第二LED產生之一信號而改變彼區段中之該等第一LED之一亮度。According to an aspect of the present invention, there is provided an apparatus comprising: a segmented light emitting diode (LED) wafer having a plurality of regions separated by trenches formed on the segmented LED wafer and arranged in a plurality of regions a plurality of LEDs in segments, each segment comprising at least one first LED and at least one second LED; and a controller configured to: apply a forward bias voltage to one of the first LEDs each; applying a reverse bias voltage to each of the second LEDs; and changing the first LEDs in any segment based on a signal generated by the second LED in that segment. The brightness of one of the LEDs.
相關申請案之交叉參考Cross References to Related Applications
本申請案主張2017年9月8日提出申請且2018年5月15日經發佈為第9,974,135號美國專利之第15/699,573號美國專利申請案、2018年1月16日提出申請之第18151921.6號EP專利申請案及2018年4月9日提出申請之第15/948,642號美國專利申請案之權益,該等專利申請案之內容據此以引用方式併入本文中。This application claims U.S. Patent Application No. 15/699,573 filed on September 8, 2017 and published as U.S. Patent No. 9,974,135 on May 15, 2018, and No. 18151921.6 filed on January 16, 2018 Interest in EP Patent Application and US Patent Application No. 15/948,642 filed April 9, 2018, the contents of which are hereby incorporated herein by reference.
根據本發明之態樣,揭示一種包含複數個LED之分段式發光二極體(LED)晶片。該分段式LED晶片上之每一LED具備准許該LED與其餘LED分開經加偏壓之一對觸點。因此,該分段式LED晶片中之該等LED中之某些LED可用作用於偵測周圍光之偵測器而其他LED可用作發射器。當將正向偏壓施加至該分段式LED晶片中之任一給定LED時彼LED可用作一發射器。類似地,當將一逆向偏壓施加至該分段式LED晶片中之任一LED時彼LED可用作一偵測器。According to an aspect of the invention, a segmented light emitting diode (LED) chip comprising a plurality of LEDs is disclosed. Each LED on the segmented LED chip has a pair of contacts that allows that LED to be biased separately from the rest of the LEDs. Therefore, some of the LEDs in the segmented LED chip can be used as detectors for detecting ambient light while others can be used as emitters. When a forward bias voltage is applied to any given LED in the segmented LED chip, that LED can act as an emitter. Similarly, any LED in the segmented LED chip can function as a detector when a reverse bias voltage is applied to that LED.
根據本發明之態樣,該分段式LED晶片中之該等LED中之某些LED可經最佳化以用作偵測器。舉例而言,該等經最佳化LED中之任一者可具備用於使其吸收頻帶窄化之一濾光器結構。作為另一實例,可藉由離子植入(舉例而言)對該等經最佳化LED中之任一者進行進一步摻雜以使彼LED之吸收頻帶移位及/或擴展。作為再一實例,該等經最佳化LED中之任一者可具備一濾光器結構而且另外經摻雜以對彼LED之吸收頻帶進行精細調諧。According to aspects of the invention, some of the LEDs in the segmented LED chip can be optimized for use as detectors. For example, any of these optimized LEDs may be provided with a filter structure for narrowing its absorption band. As another example, any of the optimized LEDs can be further doped by ion implantation, for example, to shift and/or expand the absorption band of that LED. As yet another example, any of the optimized LEDs may have a filter structure and be additionally doped to fine tune the absorption band of that LED.
根據本發明之態樣,該分段式LED晶片可用於建構一經改良適應性光照系統。傳統適應性光照系統包含位於單獨晶片上之光發射器及光偵測器。然而,由於該分段式LED晶片在同一晶粒上包含光發射器及光偵測器兩者,因此需要包含於該經改良適應性光照系統中之部件之數目連同系統之感測器佔用面積一起減小。According to aspects of the invention, the segmented LED chip can be used to construct an improved adaptive lighting system. Traditional adaptive lighting systems include light emitters and light detectors on separate chips. However, since the segmented LED chip includes both light emitters and light detectors on the same die, the number of components that need to be included in the improved adaptive lighting system along with the sensor footprint of the system decrease together.
根據本發明之態樣,該分段式LED晶片可准許發射器及光偵測器共用相同光學元件。由於發射器及光偵測器彼此緊密接近地設置於晶片之晶粒上,因此其可兩者皆裝配於同一透鏡(或另一類型之光學單元)下方,而不需要光學對準。如可容易地瞭解,將該等發射器及偵測器裝配於同一透鏡下方消除對在該等發射器及光偵測器使用單獨透鏡之情況下可為必要之週期性光學對準之需要。According to aspects of the invention, the segmented LED chip can allow the emitter and photodetector to share the same optical elements. Since the emitter and photodetector are placed in close proximity to each other on the die of the wafer, they can both be mounted under the same lens (or another type of optical unit) without requiring optical alignment. As can be readily appreciated, mounting the emitters and detectors under the same lens eliminates the need for periodic optical alignment that may be necessary if separate lenses were used for the emitters and photodetectors.
根據本發明之態樣,該分段式LED晶片可准許不存在於傳統光照系統中之精細照明控制。由於發射器及光偵測器彼此緊密接近地設置於晶片之晶粒上,因此不同發射器-偵測器對可裝配於一透鏡陣列中之不同透鏡下方。該陣列中之每一透鏡可經組態以在一不同中央方向上導引自其各別發射器發射之光。另外,每一透鏡可經組態以使自該透鏡之各別中央方向入射於該透鏡上之光通過從而到達其各別光偵測器。因此,每一透鏡之各別光偵測器可有效地經組態以量測主要與該透鏡之各別發射器相關聯之周圍光照條件。此又可准許朝向經過度照明之一區域而引導之一發射器LED變暗而不改變朝向未經過度照明之區域而定向的該分段式LED晶片中之其他LED之亮度。According to aspects of the present invention, the segmented LED chip can permit fine lighting control not present in conventional lighting systems. Since the emitters and photodetectors are placed in close proximity to each other on the die of the wafer, different emitter-detector pairs can be fitted under different lenses in a lens array. Each lens in the array can be configured to direct light emitted from its respective emitter in a different central direction. Additionally, each lens can be configured to pass light incident on the lens from a respective central direction of the lens to its respective light detector. Thus, each lens' individual light detectors can be efficiently configured to measure ambient lighting conditions primarily associated with that lens' individual emitters. This in turn may permit dimming of one emitter LED directed towards an over-illuminated area without changing the brightness of other LEDs in the segmented LED chip oriented towards a non-over-illuminated area.
根據本發明之態樣,揭示一種設備,該設備包括:一分段式發光二極體(LED)晶片,其包含由形成於該分段式LED晶片上之溝槽分開之複數個LED,每一LED具有一各別發射頻帶及一各別吸收頻帶,其中該複數個LED包含一或多個第一LED及一或多個第二LED,且該等第二LED中之至少一者經組態以由於在形成該等溝槽之後對該分段式LED晶片執行之處理而具有不同於該等第一LED中之任一者之一吸收頻帶。According to an aspect of the invention, an apparatus is disclosed that includes: a segmented light emitting diode (LED) die comprising a plurality of LEDs separated by trenches formed on the segmented LED die, each An LED has a respective emission band and a respective absorption band, wherein the plurality of LEDs comprises one or more first LEDs and one or more second LEDs, and at least one of the second LEDs is combined state to have a different absorption band than any of the first LEDs due to processing performed on the segmented LED wafer after forming the trenches.
根據本發明之態樣,揭示一種設備,該設備包括:一分段式發光二極體(LED)晶片,其包含由形成於該分段式LED晶片上之溝槽分開之複數個LED;及一控制器,其經組態以:將一正向偏壓施加至該分段式LED晶片中之一第一LED及一第二LED;且使該第一LED及該第二LED中之每一者之一亮度改變不同量,其中基於由該分段式LED晶片中之一經加逆向偏壓之LED產生之一第一信號而改變該第一LED之該亮度且基於與該第一信號同時地由該分段式LED晶片中之另一經加逆向偏壓之LED產生之一第二信號而改變該第二LED之該亮度。According to an aspect of the invention, an apparatus is disclosed that includes: a segmented light emitting diode (LED) die including a plurality of LEDs separated by trenches formed on the segmented LED die; and a controller configured to: apply a forward bias voltage to a first LED and a second LED in the segmented LED chip; and cause each of the first LED and the second LED to A brightness of one of the segmented LED chips is changed by different amounts, wherein the brightness of the first LED is changed based on a first signal generated by a reverse-biased LED in the segmented LED chip and simultaneously with the first signal The brightness of the second LED is changed by a second signal generated by another reverse-biased LED in the segmented LED chip.
根據本發明之態樣,揭示一種設備,該設備包括:一分段式發光二極體(LED)晶片,其包含由形成於該分段式LED晶片上之溝槽分開之複數個LED;及一控制器,其經組態以:將一正向偏壓施加至該複數個LED中之一或多個第一LED;將一逆向偏壓施加至該複數個LED中之一或多個第二LED;及基於由與一給定第一LED共置之一或多個給定第二LED產生之一信號而改變該給定第一LED之一亮度。According to an aspect of the invention, an apparatus is disclosed that includes: a segmented light emitting diode (LED) die including a plurality of LEDs separated by trenches formed on the segmented LED die; and A controller configured to: apply a forward bias voltage to one or more first LEDs of the plurality of LEDs; apply a reverse bias voltage to one or more first LEDs of the plurality of LEDs two LEDs; and varying a brightness of a given first LED based on a signal generated by one or more given second LEDs co-located with the given first LED.
將參考附圖在下文更充分地闡述不同適應性光照系統之實例。此等實例係不相互排斥的,且存在於一項實例中之特徵可與存在於一或多項其他實例中之特徵組合以達成額外實施方案。因此,將理解,附圖中所展示之實例僅出於說明性目的而提供且其不意欲以任一方式限制本發明。通篇中相似編號係指相似元件。Examples of different adaptive lighting systems will be explained more fully below with reference to the accompanying drawings. These examples are not mutually exclusive, and features present in one example can be combined with features present in one or more other examples to achieve additional implementations. Accordingly, it will be understood that the examples shown in the drawings are provided for illustrative purposes only and that they are not intended to limit the invention in any way. Like numbers refer to like elements throughout.
將理解,儘管本文中可使用第一、第二等術語來闡述各種元件,但此等元件不應受此等術語限制。此等術語僅用於將一個元件與另一元件區分開。舉例而言,可將一第一元件稱作一第二元件,且類似地,可將一第二元件稱作一第一元件,此並不背離本發明之範疇。如本文中所使用,術語「及/或」包含相關聯所列物項中之一或多者之任何及所有組合。It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
將理解,當諸如一層、區或基板之一元件稱為「在」另一元件「上」或「延伸至」另一元件「上」時,其可直接在另一元件上或直接延伸至另一元件上,或亦可存在介入元件。相反,當一元件稱為「直接在」另一元件「上」或「直接延伸至」另一元件「上」時,不存在介入元件。亦將理解,當一元件稱為「連接」或「耦合」至另一元件時,其可直接連接或耦合至另一元件,或可存在介入元件。相反,當一元件稱為「直接連接」或「直接耦合」至另一元件時,不存在介入元件。將理解,除圖中所繪示之任何定向以外,此等術語亦意欲囊括元件之不同定向。It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending to" another element, it can be directly on or directly extending to the other element. On one element, or there may be intervening elements. In contrast, when an element is referred to as being “directly on” or “extending directly onto” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. It will be understood that these terms are intended to encompass different orientations of elements in addition to any orientation depicted in the figures.
本文中可使用相對術語(諸如「在……下面」或「在……上面」或者「上部」或「下部」或者「水平」或「垂直」)來闡述如圖中所圖解說明之一個元件、層或區與另一元件、層或區之一關係。將理解,除圖中所繪示之定向以外,此等術語亦意欲囊括元件之不同定向。Relative terms (such as "below" or "above" or "upper" or "lower" or "horizontal" or "vertical") may be used herein to describe an element as illustrated in the figures, One relationship of a layer or region to another element, layer or region. It will be understood that these terms are intended to encompass different orientations of elements in addition to the orientation depicted in the figures.
圖1及圖2繪示根據本發明之態樣之一分段式LED晶片100之一實例。具體而言,圖1係分段式LED晶片100之一俯視圖且圖2係分段式LED晶片100之側視圖。分段式LED晶片100包含劃分成多個節段之一單個LED晶粒,該多個節段中之每一者經組態以與其餘節段分開操作。更特定而言,在本實例中,分段式LED晶片100包含由形成於晶片之晶粒上之溝槽120分開之複數個LED 110。分段式LED晶片100中之LED 110中之每一者具備准許彼LED與其餘LED分開經加偏壓之一各別對觸點130。1 and 2 illustrate an example of a segmented
在某些實施方案中,分段式LED晶片100可係為與一標準LED類似或完全相同之大小,且每一LED 110 (例如,一節段)可比典型LED小。舉例而言,一標準1mm × 1mm LED晶片可由各自為200um × 200um之5 × 5個LED (或節段)構成。大小取決於節段(例如,LED)之間的間距,此由製造能力決定。根據本實例,(舉例而言)藉由對分段式LED晶片100之晶粒進行乾式蝕刻向下至一絕緣基板或基台(submount)以切斷LED 110之間的任何電連接而使LED 110彼此電隔離。觸點將以一眾所周知之方式單獨沈積於每一LED 110上。In certain implementations, the
由於LED能夠單獨經加偏壓,因此可藉由正向加偏壓於LED 110中之某些LED同時逆向加偏壓於其他LED而將分段式LED晶片100同時操作為一發射器及偵測器。如此項技術中眾所周知,當將一正向偏壓施加至一LED時,彼LED發射光且在本說明書之命名法下據稱操作為一發射器(或在發射器模式中)。類似地,當將一逆向偏壓施加至一給定LED時,彼LED操作為一光偵測器且在本說明書之命名法下據稱操作為一偵測器(或在偵測器模式中)。此外,由於分段式LED晶片100中之LED 110中之每一者可獨立地經加偏壓,因此可藉由驅動分段式LED晶片100之任何控制電路選擇性地設定晶片中之發射器及偵測器之位置以及相對數目。如下文進一步論述,一分段式LED晶片中之發射器及偵測器之一給定組態可稱為賦予彼分段式LED晶片之一「操作型樣」。Since LEDs can be individually biased, segmented
圖3A、圖3B及圖3C圖解說明根據本發明之態樣之可賦予一分段式LED晶片之不同操作型樣之實例。更特定而言,圖3A圖解說明經組態以根據一第一操作型樣操作之一分段式LED晶片300a之一實例。如此型樣中所圖解說明,LED 312a係逆向加偏壓的且經組態以操作為偵測器,而LED 314a係正向加偏壓的且經組態以操作為發射器。圖3B圖解說明經組態以根據一第二操作模式操作之一分段式LED晶片300b之一實例。如所圖解說明,根據該第二操作型樣,LED 312b係逆向加偏壓的且經組態以操作為偵測器,而LED 314b係正向偏壓的且經組態以操作為發射器。圖3C圖解說明經組態以根據一第三操作型樣操作之一分段式LED晶片300c之一實例。如所圖解說明,根據該第三操作型樣,LED 312c係逆向加偏壓的且經組態以操作為偵測器,而LED 314c係正向偏壓的且經組態以操作為發射器。3A, 3B, and 3C illustrate examples of different operational patterns that can be imparted to a segmented LED chip in accordance with aspects of the present invention. More particularly, FIG. 3A illustrates an example of a segmented
在某些態樣中,操作為偵測器之LED之數目可取決於所需要敏感度量而變化。若所需要敏感度愈大,則一給定分段式LED晶片中可操作為偵測器之LED愈多。相比而言,若需要一經減小敏感度,則給定分段式LED晶片中可用作偵測器之LED愈少。另外或另一選擇係,在某些實施方案中,一分段式LED晶片中之所有LED可經組態以操作為發射器(例如,放置於正向偏壓中)。另外或另一選擇係,在某些實施方案中,一分段式LED晶片中之所有LED可經組態以操作為偵測器(例如,在逆向反向上經加偏壓)。In some aspects, the number of LEDs operating as detectors may vary depending on the desired measure of sensitivity. The greater the sensitivity required, the more LEDs in a given segmented LED chip can be operated as detectors. In contrast, fewer LEDs can be used as detectors in a given segmented LED chip if reduced sensitivity is desired. Additionally or alternatively, in certain implementations, all LEDs in a segmented LED die can be configured to operate as emitters (eg, placed in forward bias). Additionally or alternatively, in certain implementations, all LEDs in a segmented LED chip can be configured to operate as detectors (eg, biased in reverse).
在某些實施方案中,一分段式LED晶片上之LED可經組態以提供暫態電壓抑制(TVS)。在其中期望將一分段式LED晶片中之所有LED操作為發射器之例項中,然而可使一個LED保持在相反極性中(例如,在逆向反向上經加偏壓)以提供TVS。在其中期望將一分段式LED晶片中之所有LED操作為偵測器之例項中,然而可使一個LED保持在相反極性中(例如,在正向方向上經加偏壓)以提供TVS。In certain implementations, the LEDs on a segmented LED chip can be configured to provide transient voltage suppression (TVS). In instances where it is desired to operate all LEDs in a segmented LED die as emitters, one LED can however be held in the opposite polarity (eg, biased in reverse) to provide TVS. In instances where it is desired to operate all LEDs in a segmented LED chip as detectors, one LED can however be held in the opposite polarity (eg, biased in the forward direction) to provide TVS .
在某些態樣中,一分段式LED晶片中之LED中之某些LED可經最佳化以用作偵測器。圖4係包含由形成於晶片之晶粒上之溝槽430分開之LED 410及420的一分段式LED晶片400之一俯視圖。LED 410及420中之每一者具有一各別吸收頻帶及一各別發射頻帶。然而,LED 420中之任一者之吸收頻帶不同於LED 410中之每一者之吸收頻帶。舉例而言,LED 420中之任一者可具有比LED 410中之每一者之吸收頻帶寬之一吸收頻帶。作為另一實例,LED 420中之任一者可具有相對於LED 410中之任一者之吸收頻帶移位之一吸收頻帶。在某些態樣中,LED 410及420之吸收頻帶之間的差可係對LED 420進行精細調諧以適合一特定應用(諸如偵測由鹵素光源發射之光)之結果,LED 410在用作偵測器時可不能夠良好地偵測由鹵素光源發射之該光。In some aspects, some of the LEDs in a segmented LED chip can be optimized for use as detectors. 4 is a top view of a
LED 420中之任一者可作為與LED 410中之任一者完全相同之一結構而開始,在形成溝槽430之後藉助於離子植入(舉例而言)對該結構進行進一步改質以產生LED 420。作為離子植入之一結果,不存在於LED 410之晶格中之額外原子及/或缺陷(例如,空位、間隙、替代者等)可存在於LED 420之晶格中。彼等額外原子及/或缺陷在LED作用區能隙內形成深能階陷阱,且此等深能階陷阱充當較低能量(亦即,較長波長)吸收中心,該等較低能量吸收中心最終致使LED 420具有不同於LED 410之一吸收頻帶。在某些實施方案中,LED 420中之任一者可包含比LED 410中之每一者大的一給定經植入元素(例如,鐵、磷、砷、銻及鉍)之原子或所得點缺陷(例如,空位、間隙等)之一濃度。舉例而言,該給定元素之原子可以較低濃度存在於LED 410中或根本不存在。另外或另一選擇係,在某些實施方案中,LED 420中之任一者可包含比LED 410中之每一者大之一點缺陷濃度。Any of the
儘管在本實例中所有LED 420具有相同吸收頻帶,但在某些實施方案中LED 420中之至少某些LED可具有不同吸收頻帶。舉例而言,分段式LED晶片400可包含經最佳化以偵測自鹵素前照燈發射之光之一第一LED 420、經最佳化以偵測自氙氣前照燈發射之光之一第二LED 420及經最佳化以偵測來自白熾前照燈之光之一第三LED 420。在某些態樣中,第一LED 420、第二LED 420及第三LED 420中之每一者(或其中之至少兩者)可摻雜有一不同元素及/或以不同量來摻雜以達成吸收頻帶之變化。Although in this example all
在某些實施方案中,第二LED之吸收頻帶可藉由改變在用作一偵測器時所施加之逆向偏壓之量值而變更。在III族氮化物LED (舉例而言)中,逆向偏壓量值之一增加隨著量子井頻帶變平而首先使吸收頻帶移位至較短波長,此乃因所施加偏壓抵消作用區內之極化引發式電場。隨著逆向偏壓量值繼續增加,吸收頻帶移位至較長波長。In certain implementations, the absorption band of the second LED can be altered by varying the magnitude of the applied reverse bias voltage when used as a detector. In III-nitride LEDs, for example, an increase in one of the reverse bias magnitudes first shifts the absorption band to shorter wavelengths as the quantum well band flattens, since the applied bias cancels the active region The polarization-induced electric field inside. As the reverse bias magnitude continues to increase, the absorption band shifts to longer wavelengths.
圖5繪示根據本發明之態樣之包含經最佳化以用作偵測器之LED的一分段式LED晶片500之另一實例。分段式LED晶片500包含由形成於晶片之晶粒上之溝槽530分開之LED 510及LED 520。LED 520中之每一者具備形成於其(若干)各別發光表面中之一或多者上之一濾光器結構。由於具備一濾光器結構,因此LED 520中之任一者可具有比LED 510中之每一者窄之一吸收頻帶。在某些態樣中,LED 510之吸收頻帶與LED 520之吸收頻帶之間的差可係對LED 520進行精細調諧以適合一特定目的之結果。FIG. 5 illustrates another example of a
在某些實施方案中,可在已蝕刻分段式LED晶片500之溝槽之後形成LED 520之各別濾光器結構。LED 520中之每一者可作為與LED 510實質上完全相同之一基底結構(例如,一LED)而開始,進一步處理該基底結構以在其表面中之一或多者上包含一各別濾光器結構。可使用任何適合類型之技術(諸如電漿增強型化學汽相沈積、原子層沈積或濺鍍(舉例而言))來沈積LED 520之各別濾光器結構。該等各別濾光器結構可由用於形成分佈式布拉格反射器(DBR)之任何適合類型之材料(諸如介電層或介電層堆疊)形成,該等分佈式布拉格反射器產生不期望照射在LED上之高反射率之特定波長之光(舉例而言)。本發明不限於用於沈積濾光器結構及/或組合物之任何特定類型之程序。In certain implementations, the individual filter structures of the
如上所述,可藉由用一各別濾光器結構覆蓋與LED 510 中之一者實質上完全相同之一基底結構(例如,一LED)而形成LED 520中之每一者。在某些態樣中,一給定LED 520之濾光器結構可經組態以具有與給定LED 520之基底結構之吸收頻帶僅部分地重疊之一透射頻帶。舉例而言,給定LED 520之濾光器結構可具有一透射頻帶,該透射頻帶具有一各別下限及一各別上限。類似地,給定LED 520之基底結構(或LED 510中之任一者)可具有一吸收頻帶,該吸收頻帶具有一各別下限及一各別上限。在某些態樣中,濾光器結構之透射頻帶之下限可大於基底結構(或LED 510中之任一者)之吸收頻帶之下限。另外或另一選擇係,濾光器結構之透射頻帶之上限可低於給定LED 520之基底結構(或LED 510中之任一者)之吸收頻帶之上限。As noted above, each of
圖6係根據本發明之態樣之一適應性光照系統600之一實例之一示意圖。適應性光照系統600包含一分段式LED晶片610及一控制器620,如所展示。控制器620包含驅動器電路622a至622d及一控制電路624。FIG. 6 is a schematic diagram of an example of an
驅動器電路622a至622d中之每一者耦合至分段式LED晶片610上之一不同LED群組。舉例而言,驅動器電路622a耦合至係群組A之一部分之LED 612a及614a。驅動器電路622b耦合至係群組B之一部分之LED 612b及614b。驅動器電路622c耦合至係群組C之一部分之LED 612c及614c。驅動器電路622d耦合至係群組D之一部分之LED 612d及614d。根據本實例,LED 612a至612d中之每一者經組態以藉由將一正向偏壓施加至其而操作為一發射器。此外,根據本實例,LED 614a至614d中之每一者經組態以藉由將一逆向偏壓施加至其而操作為一偵測器。因此,驅動器電路622a至622d中之每一者連接至一發射器LED及一偵測器LED。儘管在本實例中群組A至D中之每一者僅包含一個發射器及一個偵測器,但其中群組A至D中之任一者包含多個發射器及/或多個偵測器之替代實施方案係可能的。舉例而言,群組A至D中之任一者可包含任一數目個發射器(例如,1個、5個、20個、30個等)。類似地,群組A至D中之任一者可包含任一數目個偵測器(例如,1個、5個、20個、30個等)。例如,在某些實施方案中,群組A至D中之任一者可包含一個偵測器及五個發射器。因此,在某些實施方案中,發射器及偵測器不需要成對匹配。Each of
根據本發明之態樣,驅動器電路622a可經組態以基於由LED 614b產生之一信號而改變LED 612a之亮度。在某些實施方案中,改變LED 612a之亮度可包含增加LED 612a之亮度、減小LED 612a之亮度(例如,使LED 612a變暗)、接通LED 612a及關斷LED 612a。另一選擇係,在某些實施方案中,改變LED 612a之亮度可僅包含增加LED 612a之亮度及減小LED 612a之亮度(例如,使LED 612a變暗)。根據本實例,若LED 612a在比用於在給LED 612a供能量時驅動LED 612a之一脈寬調變(PWM)波之關斷週期長之一週期內保持關斷,則LED 612a可被視為斷電。舉例而言,若在比PWM波之接通週期與關斷週期之總和長之一持續時間內未給LED 612a供應電力,則LED 612a可被視為斷電。作為另一實例,若在1秒或更久內未給LED 612a供應電力,則LED 612a可被視為斷電。在某些實施方案中,增加LED 612a之亮度可包含增加供應至LED 612a之電流。另外或另一選擇係,在某些實施方案中,減小LED 612a之亮度可包含在不完全關斷LED 612a之情況下減小供應至LED 612a之電流。另外或另一選擇係,接通LED 612a可包含在未給LED 612a供能量時開始將電流供應至LED 612a。According to aspects of the invention,
在某些實施方案中,驅動器電路622a可根據入射於群組A中之LED上之光量改變LED 612a之亮度。舉例而言,當由LED 614a產生之信號指示大量光入射於群組A中之LED上時,驅動器電路622a可減小LED 612a之亮度。另一選擇係,當由LED 614a產生之信號指示低量光入射於群組A中之LED上時,驅動器電路622a可增加LED 612a之亮度。因此,根據本實例,驅動器電路622a實施在一LED群組及/或分段式LED晶片610之一部分局部之一適應性光照特徵。In certain implementations, the
在某些實施方案中,當由LED 614a產生之信號超過一第一臨限值時驅動器電路622a可減小LED 612a之亮度。另外或另一選擇係,當由LED 614a產生之信號超過一第二臨限值時驅動器電路622a可增加LED 612a之亮度。另外或另一選擇係,LED 612a之亮度減小或增加之量可與由LED 614a產生之信號之值之一改變成比例。因此,在某些實施方案中,可連續地而非在離散步驟中調整LED 612a之亮度。In some embodiments, the
在某些實施方案中,LED 614a可連續地操作為一偵測器。另一選擇係,在某些實施方案中,LED 614a可操作為一偵測器及一發射器兩者。舉例而言,可由驅動器電路622a將LED 614a之偏壓自正向週期性地切換至逆向以獲取一讀數,且然後返回至正向。(例如,參見圖13)。可非常迅速地(例如<10ns)發生LED 614a之偏壓之切換以允許光收集。在某些實施方案中,可以一非常高頻率切換LED 614a之偏壓,使得LED 614a之狀態之改變對於人眼係察覺不到的。根據本實例,LED 614b至614d可藉由其各別驅動器電路以一類似方式來操作。In some embodiments,
驅動器電路622b至622c中之每一者可以類似於驅動器電路622a之一方式來操作。更特定而言,驅動器電路622b可係經組態以基於由LED 614b產生之一信號而改變LED 612b之亮度之任何適合類型之電路。驅動器電路622c可係經組態以基於由LED 614c產生之一信號而改變LED 612c之亮度之任何適合類型之電路。而且,驅動器電路622d可係經組態以基於由LED 614d產生之一信號而改變LED 612d之亮度之任何適合類型之電路。Each of
控制電路624可包含一場可程式化閘陣列(FPGA)、一特殊應用積體電路(ASIC)、一處理器、一記憶體及/或經組態以改變驅動器電路622a至622d中之任一者之狀態之任何其他適合類型之電路。舉例而言,改變一給定驅動器電路之狀態可包含致使該給定驅動器電路增加或減小施加至一特定偵測器LED之偏壓。作為另一實例,改變一給定驅動器電路之狀態可包含致使驅動器電路增加或減小供應至一特定發射器LED之電流量。因此,在某些實施方案中,控制電路624可經組態以設定由一(若干)給定偵測器LED產生之信號與(若干)相關聯發射器LED之光輸出(隨後由連接至該(等)給定偵測器LED及其(若干)相關聯發射器LED之一驅動器電路執行)之間的一關係。The
在某些實施方案中,可自控制器620省略控制電路624。在此等例項中,LED群組A至D中之每一者可由一單獨驅動器電路完全獨立於其餘LED群組來控制。In certain implementations, the
在本實例中,控制器620經組態以控制包含一單個分段式LED晶片之一LED矩陣。然而,在某些實施方案中,控制器可經組態以控制包含複數個分段式LED晶片及/或一或多個非分段式LED晶片之一LED矩陣。舉例而言,控制器620可經組態以控制包含四個分段式LED晶片之一LED矩陣,使得驅動器電路622a至622d中之每一者連接至分段式LED晶片中之一不同者。In this example,
在本實例中,群組A至D中之LED硬接線至不同驅動器電路。然而,在某些實施方案中,控制器620可具備使得控制電路624能夠將對分段式LED晶片610中之LED之控制選擇性地指派給驅動器電路中之任一者的一切換組構。舉例而言,該切換組構可使得控制電路624能夠將分段式LED晶片610中之所有LED連接至一特定驅動器電路。另一選擇係,該切換組構可使得控制電路624能夠將分段式LED晶片610中之LED之一半連接至一個驅動器電路,同時將另一半連接至另一驅動器電路。簡潔地陳述,該切換組構可准許控制電路624將分段式LED晶片610中之LED動態地分組成任一數目個群組,且將每一群組指派給一不同驅動器電路。In this example, the LEDs in groups A-D are hardwired to different driver circuits. However, in certain implementations, the
圖7係根據本發明之態樣之一適應性光照系統700之一實例之一圖式。適應性光照系統700包含耦合至一控制器720之一分段式LED晶片710。控制器720包含一處理器722、一記憶體724及一驅動器726。處理器722可包含任何適合類型之處理器,諸如一特殊應用整合處理器(ASIC)、一場可程式化閘陣列(FPGA)、一個一般用途處理器(例如,一基於ARM之處理器、一基於x86之處理器、一MIPS處理器等)中之一或多者。記憶體724可包含任何適合類型之揮發性及非揮發性記憶體,諸如DRAM、EEPROM、快閃記憶體、一固態磁碟機(SSD)及一硬碟機。驅動器726可包含經組態以加偏壓於及/或將電流供應至分段式LED晶片710中之LED中之任一者之任何適合類型之電子電路。7 is a diagram of an example of an
在某些實施方案中,控制器720可藉由將一正向偏壓施加至分段式LED晶片710中之LED中之某些LED而組態彼等LED以操作為發射器。此外, 控制器720可藉由逆向加偏壓於分段式LED晶片710中之LED中之其他LED而組態彼等LED以操作為偵測器。然後,控制器720可基於由偵測器LED中之一或多者產生之(若干)信號而改變發射器LED中之任一者之亮度,如下文關於圖15至圖17所論述。In certain implementations, the
在某些實施方案中,控制器720可經組態以個別地對分段式LED晶片710中之LED中之每一者進行定址。舉例而言,控制器720可經組態以使分段式LED晶片710中之任一LED之偏壓之量值及/或極性獨立於其餘LED而改變。作為另一實例,控制器720可經組態以增加或減小供應至分段式LED晶片710中之任一LED之電流而不改變至分段式LED晶片710中之其他LED中之任一者之電流供應。作為另一實例,控制器720可經組態以偵測由分段式LED晶片710中之LED中之一者產生之一信號。儘管在本實例中控制器720用於控制由一單個分段式LED晶片組成之一LED矩陣,但其中控制器720經組態以控制任何適合類型之LED矩陣(諸如包含多個分段式LED晶片之一矩陣及/或包含一或多個非分段式LED晶片之一矩陣)之替代實施方案係可能的。In certain implementations, the
圖8係圖解說明根據本發明之態樣之使用一分段式LED晶片之一適應性汽車光照系統之操作之一實例之一圖式。在此實例中,車輛810及830在一道路800上在相反方向上行進。車輛810及830之前照燈中之每一者包含由一控制器驅動之一分段式LED晶片(或另一類型之LED矩陣),該控制器經組態以在遇到迎面而來之車輛時採取一適應性動作。8 is a diagram illustrating an example of the operation of an adaptive automotive lighting system using a segmented LED chip according to aspects of the invention. In this example,
根據本實例,車輛810包含經接通以分別照明一空間822及一空間824之前照燈812及814。空間822可包含在車輛810前面之道路800之一對應區段以及在該對應區段上面之空間。類似地,空間824可包含在車輛810前面之道路800之另一對應區段以及在該另一對應區段上面之空間。車輛830包含經接通以分別照明一空間842及一空間844之前照燈832及834。空間842包含在車輛830前面之道路800之一對應區段以及在該對應區段上面之空間。類似地,空間844可包含在車輛830前面之道路800之另一對應區段以及在該另一對應區段上面之空間。According to the present example, a
在某些實施方案中,前照燈812及814可由經組態以代表車輛810採取各種適應性動作之同一控制器操作,如下文進一步論述。另外或另一選擇係,前照燈812及814可由不同各別控制器操作。因此,將理解,本發明不限於車輛810及830之適應性光照系統之任何特定系統拓撲。In certain implementations, the
圖9係圖解說明根據本發明之態樣之在遇到迎面而來之車輛時可由圖8之適應性汽車光照系統採取之一適應性動作之一實例之一圖式。更特定而言,當車輛830進入空間822時,前照燈812藉由使用前照燈之分段式LED晶片中之一或多個偵測器LED而偵測自車輛830之前照燈832發射之光。作為回應,關斷前照燈812及814以避免使車輛830之駕駛員目眩。當車輛810及830交錯而過時,自前照燈834發射之光不再照明前照燈812中之偵測器LED且再接通車輛830之前照燈812及814。儘管在本實例中車輛810及830中之僅一者關斷其前照燈,但在某些實施方案中兩個車輛皆可關斷其前照燈(或使其前照燈變暗)。另外或另一選擇係,在某些實施方案中,車輛810及830中之任一者可僅關斷每一前照燈中之LED中之某些LED (或使該等LED變暗)。9 is a diagram illustrating an example of an adaptive action that may be taken by the adaptive automotive lighting system of FIG. 8 when encountering oncoming vehicles in accordance with aspects of the invention. More specifically, when the
根據本發明之態樣,當車輛810及830兩者皆進入其中車輛810及830看到迎面而來之光源之一圓圈且關斷其前照燈(或僅僅使該等前照燈變暗) (此後兩個車輛皆認識到光不再照在其上且再接通其前照燈)時可發生一閃爍狀況。在某些實施方案中,車輛810及830可藉由交換通信以判定車輛810及830中之哪一者將關斷其前照燈(或僅僅使前照燈變暗)而阻止閃爍狀況發生。舉例而言,車輛810及830中之每一者可將指令使其前照燈在一預定時間週期(例如,30秒)內保持關斷(或變暗)之一訊息傳輸至另一車輛。可使用車輛之前照燈、一無線電收發器及/或任何其他適合類型之元件傳輸該訊息。According to an aspect of the invention, when both
在某些態樣中,車輛810可使用係前照燈812之一部分之一分段式LED晶片作為用於與車輛830交換通信以判定哪一車輛將關斷其前照燈之一收發器。類似地,車輛830可使用係前照燈832之一部分之一分段式LED晶片作為用於與車輛830交換通信以判定哪一車輛將關斷其前照燈之一收發器。可使用任何適合類型之可見光通信(VLC)協定來交換通信。簡潔地陳述,根據本實例,車輛810及830中之任一者可使用係其前照燈之一部分之一分段式LED晶片來照明在車輛前面之道路且與迎面而來之車輛交換通信。In some aspects, the
在某些態樣中,車輛810及830中之每一者可包含與車輛之前照燈分開但仍使用一分段式LED晶片(諸如分段式LED晶片100)來在一可見或不可見光頻帶中傳輸通信的一收發器。以此方式使用分段式LED晶片可係有利的,此乃因分段式LED晶片中之發射器LED及偵測器LED由於分段式LED晶片中之LED之間的緊密空間接近而可係實際上自對準的。其可在不以(週期性)對準為代價之情況下經放置於一非常緊密光束中。In some aspects, each of
圖10A係圖解說明根據本發明之態樣之在遇到迎面而來之車輛時可由圖8之適應性汽車光照系統採取之另一適應性動作之一實例之一圖式。在此實例中,車輛810之前照燈812使用至少一個分段式LED晶片來照明在車輛810前面之道路,使得分段式LED晶片中之不同LED經組態以照明空間822之不同部分。分段式LED晶片之使用准許車輛810僅將照明由車輛830佔據之空間之彼等LED (例如,可與車輛830之駕駛員之視野介接之LED)之亮度調小。如所圖解說明,車輛810可將照明空間822之一部分1010之LED之亮度調小至其能夠提供之最大亮度之30%。類似地,車輛810可將照明空間822之一部分1020之LED之亮度調小至其最大亮度之50%。同時,車輛810可繼續以其全容量操作前照燈814中之剩餘發射器LED,如所展示。此外,車輛830可完全關斷照明空間842之一部分1030的前照燈832中之LED。10A is a diagram illustrating an example of another adaptive action that may be taken by the adaptive automotive lighting system of FIG. 8 when encountering oncoming vehicles in accordance with aspects of the present invention. In this example,
儘管在圖10A之實例中使前照燈812及832中之LED側至側變暗,但在某些實施方案中替代地可使前照燈812及832中之LED自頂部至底部變暗。如圖10B中所圖解說明,車輛810可將照明空間822之一部分1040的前照燈812中之LED之亮度調小至其能夠提供之最大亮度之30%。類似地,車輛810可將照明空間822之一部分1050的前照燈812中之LED之亮度調小至其最大亮度之50%。同時,車輛810可繼續以其全容量操作前照燈812中之剩餘發射器LED,如所展示。此外,車輛830可完全關斷照明空間842之一部分1060的前照燈832中之LED。Although the LEDs in the
另外或另一選擇係,在某些實施方案中,可使車輛810及820之前照燈既自左至右變暗又自頂部至底部變暗。如上所述,空間822及842係三維的。因此,可獨立地改變照明空間822之任一特定三維部分的前照燈812中之LED之亮度。類似地,亦可獨立地改變照明空間842之任一特定三維部分的前照燈832中之LED之亮度。如下文進一步論述,藉由分段式LED晶片上之發射器LED與偵測器LED之間的空間接近(此准許其與同一光學元件對準)使此類型之高粒度之適應性光照調整為可能的。Additionally or alternatively, in some implementations,
圖11A係根據本發明之態樣之前照燈812之一實例之一分解視圖。前照燈812包含一分段式LED晶片1110及一光學單元1120。分段式LED晶片1110包含複數個區段1112,複數個區段1112中之每一者包含經組態以操作為一發射器之至少一個LED及經組態以操作為一偵測器之至少一個其他LED。在某些實施方案中,分段式LED晶片1110之任一區段可包含多個偵測器LED。另外或另一選擇係,LED晶片1110之任一區段可包含具有不同各別吸收頻帶之偵測器LED。舉例而言,分段式LED晶片之一或多個區段可包含經最佳化以偵測自鹵素前照燈發射之光之一第一偵測器LED、經最佳化以偵測自氙氣前照燈發射之光之一第二偵測器LED及經最佳化以偵測來自白熾前照燈之光之一第三LED。FIG. 11A is an exploded view of an example of an
區段1112中之每一者與光學單元1120之一不同光學元件1122對準。每一光學元件1122可具有一不同中央方向1130,如圖11B中所展示。在某些實施方案中,光學單元1120可包含一透鏡陣列,且光學元件1122中之每一者可包含係陣列之一部分之一透鏡。另外或另一選擇係,光學單元可包含複數個光圈(例如,鏡筒或透鏡鏡筒)。每一光圈可經組態以在一特定方向上導引光及/或接收自特定方向到達該光圈之光,同時吸收自其他方向入射於該光圈上之光。簡潔地陳述,光學單元1220之每一光學元件可係經組態以導引去往/來自一特定方向之光之任何適合類型之元件。Each of the segments 1112 is aligned with a different optical element 1122 of the
如上文所論述,在前照燈812之操作期間,來自迎面而來之車輛前照燈之光由光學元件1122導引以照在位於與精確發射器LED (其照明由迎面而來之車輛佔據之道路之部分)相同之區段1112中之偵測器LED上。偵測器LED將吸收具有比偵測器LED之作用區內之能隙大之能量的迎面而來之光之波長。偵測器LED中之所吸收光將被轉換成傳遞至偵測器LED之電端子之一電流。當以適當方式經加偏壓時,電流量與入射於偵測器LED上之光量有關,該光量可與迎面而來之汽車之距離有關。因此,可使分段式LED晶片1110之一給定區段中之發射器LED與由彼區段中之偵測器LED感測到之光量成比例地變暗。若偵測到一較大光量,則可使LED變暗至比偵測到一較少光量之情況低之一亮度位準。在某些態樣中,可隨著迎面而來之車輛愈來愈靠近於前照燈812而使發射器LED逐漸變暗。As discussed above, during operation of the
如上所述,感測自迎面而來之車輛之前照燈發射之光之偵測器LED嵌入於與發射光之LED相同之晶片中。因此,可藉由光學單元1120使由一給定發射器LED照明之角度及/或區與位於分段式LED晶片1110之同一區段中之一給定偵測器LED所敏感之角度/區相同。更特定而言,根據本發明之態樣,僅自特定角度及/或區入射之光將入射於分段式LED晶片1110之任一給定區段上。對於分段式LED晶片1110之任一給定區段1112,可主要使來自該給定區段之經對準光學元件1122之中央方向1130之光通過該給定區段之經對準光學元件1122以到達該給定區段。類似地,由分段式LED晶片1110之任一給定區段1112中之發射器LED發射之光可由該給定區段之經對準光學元件在光學元件之中央方向1130上經導引。As mentioned above, the detector LEDs that sense the light emitted from the headlights of oncoming vehicles are embedded in the same die as the LEDs that emit the light. Thus, the angle and/or area illuminated by a given emitter LED can be made comparable by the
如圖11B中所圖解說明,一光學元件1122a經組態以在一中央方向1130a上導引自分段式LED晶片1110之區段1112a發出之光。類似地,光學元件1122a經組態以導引自中央方向1130a入射於光學元件1122a上之光且(主要地)反射及/或吸收自其他方向入射於光學元件1122a上之光。因此,由於與光學元件1122a對準,因此分段式LED晶片1110之區段1112a經組態以接收主要來自中央方向1130之光。類似地,由於與光學元件1122a對準,因此分段式LED晶片1110之區段1112a經組態以主要在中央方向1130上發射光。As illustrated in FIG. 11B , an
此外,如圖11B中所圖解說明,一光學元件1122b經組態以在一中央方向1130b上導引自分段式LED晶片1110之區段1112b發出之光。類似地,光學元件1122b經組態以導引自中央方向 1130b入射於光學元件1122b上之光且(主要地)反射及/或吸收自其他方向入射於光學元件1122b上之光。因此,由於與光學元件1122b對準,因此分段式LED晶片1110之區段1112b經組態以接收主要來自中央方向1130b之光。類似地,由於與光學元件1122b對準,因此分段式LED晶片1110之區段1112b經組態以主要在中央方向1130b上發射光。Furthermore, as illustrated in FIG. 11B , an
此外,如圖11B中所圖解說明,一光學元件1122c經組態以在一中央方向1130c上導引自分段式LED晶片1110之區段1112c發出之光。類似地,光學元件1122c經組態以導引自中央方向1130c入射於光學元件1122c上之光且(主要地)反射及/或吸收自其他方向入射於光學元件1122c上之光。因此,由於與光學元件1122c對準,因此分段式LED晶片1110之區段1112c經組態以接收主要來自中央方向1130c之光。類似地,由於與光學元件1122b對準,因此分段式LED晶片1110之區段1112c經組態以主要在中央方向1130c上發射光。Furthermore, as illustrated in FIG. 11B , an
簡潔地陳述,光學元件1122中之每一者可具有一不同中央方向1130,且分段式LED晶片1110之每一區段1112可與一不同光學元件1122對準。因此,分段式LED晶片1110之每一區段可與由分段式LED晶片1110照明之空間之一不同部分相關聯。Stated succinctly, each of the optical elements 1122 can have a different central direction 1130 , and each segment 1112 of the
圖12係圖解說明根據本發明之態樣之由光學單元1120導引自分段式LED晶片1110之不同區段發射之光之方式之一示意圖。如所圖解說明,光學元件1122a致使自區段1112a發射之光經引導至空間822之部分1210a。類似地,光學元件1122a致使來自部分1210a之光經引導至區段1112a。光學元件1122b致使自區段1112b發射之光經引導至空間822之部分1210b。類似地,光學元件1122b致使來自部分1210b之光經引導至區段1112b。光學元件1122c致使自區段1112c發射之光經引導至空間822之部分1210c。類似地,光學元件1122c致使來自部分1210c之光經引導至區段1112c。光學元件1122d致使自區段1112d發射之光經引導至空間822之部分1210d。類似地,光學元件1122d致使來自部分1210d之光經引導至區段1112d。光學元件1122e致使自區段1112e發射之光經引導至空間822之部分1210e。類似地,光學元件1122e致使來自部分1210e之光經引導至區段1112e。光學元件1122f致使自區段1112f發射之光經引導至空間822之部分1210f。類似地,光學元件1122f致使來自部分1210f之光經引導至區段1112f。光學元件1122g致使自區段1112g發射之光經引導至空間822之部分1210g。類似地,光學元件1122g致使來自部分1210g之光經引導至區段1112g。光學元件1122h致使自區段1112h發射之光經引導至空間822之部分1210h。類似地,光學元件1122h致使來自部分1210h之光經引導至區段1112h。光學元件1122i致使自區段1112i發射之光經引導至空間822之部分1210i。類似地,光學元件1122i致使來自部分1210i之光經引導至區段1112i。12 is a schematic diagram illustrating the manner in which light emitted from different segments of
根據本發明之態樣,分段式LED晶片1110之任一區段中之發射器LED可僅(或主要地)基於由彼區段中之偵測器LED產生之信號而受控制。此又可致使分段式LED晶片1110之任一給定區段中之LED之亮度基於由該等LED照明之特定區域(或空間)中之光照條件而受控制。如關於圖10所論述,對分段式LED晶片1110之不同部分之此類型之粒度控制准許僅對照在迎面而來之車輛上的前照燈812中之彼等LED之調整。According to aspects of the invention, the emitter LEDs in any segment of the
儘管在本實例中前照燈812包含一單個分段式LED晶片,但其中使用多個分段式LED晶片之替代實施方案係可能的。在此等例項中,每一分段式LED晶片可與光學單元1120之一不同光學元件1122對準。此外,儘管在本實例中光學單元1120包含九個光學元件,但其中不同數目個光學元件(例如,2個光學元件、4個光學元件、5個光學元件等)包含於光學單元中之替代實施方案係可能的。此外,前照燈812可包含用於驅動係前照燈812之一部分之分段式LED晶片1110或多個LED晶片之任何適合類型之控制器。舉例而言,前照燈812可包含諸如控制器620或控制器720之一控制器。Although in the present example the
根據本發明之態樣,分段式LED晶片1110中之偵測器LED可易受串擾影響。當自分段式LED晶片1110發射之光由光學單元1120 (或前照燈812之另一元件)往回反射至分段式LED晶片1110中之偵測器LED時可發生串擾。串擾發生可損害偵測器LED之敏感度。因此,為改良偵測器LED對傳入光之敏感度,可在其中對(若干)偵測器LED進行讀取之一短週期內使(若干)發射器LED循環變暗或關斷其。使發射器LED變暗或關斷其之週期可比人眼之時間回應短,從而使變暗(或關斷)察覺不到。According to aspects of the invention, the detector LEDs in the
圖13係根據本發明之態樣之用於避免分段式LED晶片1110中之發射器LED與反射器LED之間的串擾之一程序1300之一實例之流程圖。如所圖解說明,根據程序1300,使分段式LED晶片1110中之一發射器LED在一第一狀態(步驟1310)與一第二狀態(步驟1320)之間循環,而僅在發射器LED處於第二狀態中時自位於分段式LED晶片1110之同一區段(或群組)中之一或多個經指定偵測器LED獲取讀數(步驟1330)。13 is a flowchart of an example of a
在某些實施方案中,可如此連續地操作經指定偵測器LED。另外或另一選擇係,在某些實施方案中,一或多個經指定偵測器LED在發射器LED處於第一狀態中時可操作為發射器,且在其中發射器LED處於第二狀態中之週期期間藉由改變其各別偏壓之極性而切換至偵測器模式。In certain implementations, designated detector LEDs may be operated continuously as such. Additionally or alternatively, in certain implementations, one or more designated detector LEDs are operable as emitters when the emitter LED is in the first state, and wherein the emitter LED is in the second state Switch to detector mode by changing the polarity of their respective bias voltages during the period.
在某些實施方案中,發射器LED之第二狀態可符合用於驅動發射器LED之一PWM波之關斷週期。另外或另一選擇係,第二狀態可符合PWM波之接通週期及關斷週期兩者。舉例而言,當驅動發射器LED之PWM波具有一第一工作循環時發射器LED可處於第一狀態中。此外,當驅動發射器LED之PWM波具有比第一工作循環短之一第二工作循環時發射器LED可處於第二狀態中。簡潔地陳述,在某些實施方案中,可藉由使驅動發射器LED之PWM波之工作循環(及/或電流量)變化而使發射器LED在第一狀態與第二狀態之間轉變。根據本發明之態樣,發射器LED之第一狀態可係其中發射器LED以一第一亮度位準(例如,發射器之最大亮度之100%、發射器之最大亮度之80%等)操作之狀態。發射器LED之第二狀態可係其中發射器LED以比第一亮度位準低之一第二亮度位準操作之狀態。舉例而言,第二狀態可係其中使發射器LED完全斷電之狀態或其中使發射器LED變暗(例如,以其最大亮度之40%操作)之一狀態。在某些態樣中,可使分段式LED晶片1110中之所有發射器LED (或另一類型之LED矩陣)同時在第一狀態與第二狀態之間循環,如所論述,但位於分段式LED晶片1110之不同區段(或群組)中之發射器LED之各別第一狀態及/或各別第二狀態可不同。舉例而言,一個群組(及/或晶片區段)中之發射器LED可在80%亮度與40%亮度之間循環,而另一群組(及/或晶片區段)中之發射器LED可在70%亮度與40%亮度之間循環。In certain implementations, the second state of the emitter LED can coincide with an off-period of the PWM wave used to drive the emitter LED. Additionally or alternatively, the second state may correspond to both the on-period and the off-period of the PWM wave. For example, the transmitter LED may be in the first state when the PWM wave driving the transmitter LED has a first duty cycle. Furthermore, the emitter LED may be in the second state when the PWM wave driving the emitter LED has a second duty cycle shorter than the first duty cycle. Stated briefly, in certain implementations, an emitter LED can be transitioned between a first state and a second state by varying the duty cycle (and/or amount of current) of the PWM wave driving the emitter LED. According to aspects of the invention, the first state of the emitter LED may be wherein the emitter LED operates at a first brightness level (e.g., 100% of the emitter's maximum brightness, 80% of the emitter's maximum brightness, etc.) state. The second state of the emitter LED may be a state in which the emitter LED operates at a second brightness level lower than the first brightness level. For example, the second state may be a state in which the transmitter LED is completely powered off or a state in which the transmitter LED is dimmed (eg, operating at 40% of its maximum brightness). In some aspects, all of the emitter LEDs in segmented LED die 1110 (or another type of LED matrix) can be cycled between the first state and the second state simultaneously, as discussed, but at the The respective first states and/or respective second states of the emitter LEDs in different segments (or groups) of segmented LED die 1110 may be different. For example, the emitter LEDs in one group (and/or die section) may cycle between 80% brightness and 40% brightness, while the emitter LEDs in another group (and/or die section) The LEDs can cycle between 70% brightness and 40% brightness.
根據本發明之態樣,當由分段式LED晶片1110中之一或多個發射器LED發射之光經引導朝向相鄰LED時可發生另一類型之串擾。圖14A及圖14B圖解說明經最佳化以避免此類串擾之一分段式LED晶片1400之一實例。更特定而言,圖14A係分段式LED晶片1400之一俯視圖,而圖14B係分段式LED晶片1400之一側視圖。分段式LED晶片1400包含由溝槽1420分開之複數個LED 1410。在溝槽1420內側,形成包含複數個單元之一柵欄結構。在每一單元內側安置一不同LED 1410,如所展示。每一單元之壁可比包圍在其中之LED高,因此阻止由彼LED發射之光向側面朝向相鄰LED行進。在某些態樣中,柵欄結構1430可由具有反射塗層(諸如一金屬(例如,銀))之任何適合材料(例如,玻璃、金屬等)、介電分佈式布拉格反射器(DBR)或基於聚矽氧之光學散射矩陣(舉例而言)形成。在某些態樣中,柵欄結構1430可由一材料組合(諸如塗佈有一反射金屬之一介電柵欄,舉例而言)形成。在某些實施方案中,柵欄結構1430之每一單元之壁可介於包圍在其中之LED之高度之100%與1000%之間。可使用任何適合類型之程序(諸如電漿增強型化學汽相沈積、原子層沈積、蒸鍍沈積、濺鍍沈積或聚矽氧模製,舉例而言)形成柵欄結構1430之元件。Another type of crosstalk can occur when light emitted by one or more emitter LEDs in segmented LED die 1110 is directed toward adjacent LEDs in accordance with aspects of the invention. 14A and 14B illustrate one example of a segmented LED die 1400 optimized to avoid such crosstalk. More specifically, FIG. 14A is a top view of a
圖15係根據本發明之態樣之用於操作一LED矩陣之一程序1500之一實例之一流程圖。該LED矩陣可由一單個分段式LED組成,或包含多個分段式LED晶片,及/或包含一或多個非分段式LED晶片。可由以操作方式耦合至LED矩陣之任何適合類型之控制器執行程序1500。15 is a flowchart of an example of a
在步驟1510處,將矩陣中之複數個LED配置成若干群組。在某些實施方案中,將LED配置成若干群組可包含將LED中之每一者連接至複數個驅動器電路中之一者。(例如,參見圖6)。另外或另一選擇係,將LED配置成若干群組可包含產生識別該等群組之一資料結構及將該資料結構儲存於一記憶體中。舉例而言,該資料結構可將每一群組之一識別符(例如,「群組1」、「群組2」等)映射至係該群組之一部分之LED之識別符(例如,位址)之一清單。At
例如,該資料結構可係如在下文由表1所圖解說明之一表:
在表1之實例中,每一LED由一雙值(X,Y)來識別,其中X係一LED矩陣中之LED之位置之一行編號且Y係一列編號。儘管在本實例中使用一X-Y座標來對LED矩陣中之LED進行定址,但其中可替代地使用與LED之各別位置對應之任何適合類型之文數識別符之替代實施方案係可能的。如下文進一步論述,在某些實施方案中,可使用位址來識別矩陣中經共置之LED。In the example of Table 1, each LED is identified by a double value (X,Y), where X is the row number and Y is the column number of the LED's position in an LED matrix. Although in this example an X-Y coordinate is used to address the LEDs in the LED matrix, alternative implementations are possible in which any suitable type of alphanumeric identifier corresponding to the respective positions of the LEDs could alternatively be used. As discussed further below, in certain implementations, addresses can be used to identify co-located LEDs in a matrix.
在步驟1520處,組態每一群組中之LED。根據本發明之態樣,組態一給定群組中之LED可包含將一正向偏壓或一逆向偏壓中之一者施加至給定群組中之LED中之每一者,從而有效地致使LED中之每一者操作為一發射器LED或一偵測器LED。在某些實施方案中,施加至發射器LED及偵測器LED之偏壓之量值可係相同的,且僅極性可變化。另外或另一選擇係,在某些實施方案中,施加至偵測器LED之偏壓可在量值及極性兩個方面不同於發射器LED之偏壓。另外或另一選擇係,施加至一給定群組中之不同發射器LED之偏壓之量值可係不同的。另外或另一選擇係,施加至一給定群組中之不同發射器LED之偏壓之量值可係相同的。另外或另一選擇係,施加至一給定群組中之不同偵測器LED之偏壓之量值可係不同的。另外或另一選擇係,施加至一給定群組中之不同偵測器LED之偏壓之量值可係相同的。At
另外或另一選擇係,組態一給定群組中之LED可包含識別經最佳化以操作為偵測器的群組中之一或多個LED及將一逆向偏壓施加至該一或多個LED。(例如,參見圖4及圖5。) 在某些實施方案中,該等經最佳化LED可基於儲存於控制器之記憶體中之一資料結構而識別,該資料結構識別作為接收器經最佳化的群組中之LED。在某些實施方案中,該資料結構亦可識別針對每一經最佳化LED之一偏壓量值,此乃因以不同方式經摻雜之LED可需要不同偏壓。在某些實施方案中,可根據資料結構中所規定之一對應偏壓量值加偏壓於經最佳化LED中之每一者。Additionally or alternatively, configuring the LEDs in a given group may include identifying one or more LEDs in the group that are optimized to operate as detectors and applying a reverse bias to the one or more LEDs in the group. or multiple LEDs. (See, eg, Figures 4 and 5.) In certain embodiments, the optimized LEDs can be identified based on a data structure stored in the controller's memory that identifies LEDs in optimized groups. In certain implementations, the data structure may also identify a bias voltage magnitude for each optimized LED, since LEDs that are doped in different ways may require different bias voltages. In certain implementations, each of the optimized LEDs can be biased according to a corresponding bias magnitude specified in the data structure.
另外或另一選擇係,在某些實施方案中,組態一給定群組中之LED可包含擷取識別一特定操作型樣之一資料結構及因此藉由加偏壓於該給定群組中之LED而將彼操作型樣賦予該給定群組。在某些態樣中,資料結構可包含針對群組中之每一LED之一不同識別符,該不同識別符規定將施加至彼LED之偏壓之極性。舉例而言,資料結構可係如下文所展示之一表:
根據表2之實例,資料結構可係含有二進制值之一3×3矩陣,其中0指示一正向偏壓將施加至一給定LED,且「1」指示將施加一逆向偏壓。資料結構可施加至任一LED群組,其中LED配置於一3×3矩陣中,使得資料結構中之任一值irow, column 規定LEDrow, column 之偏壓。在本實例中,資料結構中之i2,2 之值等於1,其指示位於列2、行2中之LED將被放置於一逆向偏壓中。類似地,資料結構中之i1,1 之值等於0,其指示位於列1、行1中之LED將被放置於一正向偏壓中。儘管在本實例中資料結構僅識別偏壓極性,但其中資料結構識別針對一矩陣中之每一LED之一各別偏壓量值之額外實施方案係可能的,或既識別偏壓極性又識別偏壓量值。According to the example in Table 2, the data structure may contain a 3x3 matrix of binary values, where 0 indicates that a forward bias is to be applied to a given LED, and "1" indicates that a reverse bias is to be applied. The data structure can be applied to any group of LEDs, where the LEDs are arranged in a 3×3 matrix such that any value of i row, column in the data structure specifies the bias voltage of the LED row, column . In this example, the value of i 2,2 in the data structure is equal to 1, which indicates that the LED located in column 2, row 2 is to be placed in a reverse bias. Similarly, the value of i 1,1 in the data structure is equal to 0, which indicates that the LED located in column 1, row 1 is to be placed in a forward bias. Although in this example the data structure only identifies bias polarity, additional implementations are possible where the data structure identifies an individual bias magnitude for each LED in a matrix, or identifies both bias polarity and Bias magnitude.
在步驟1530處,操作群組中之每一者以將適應性光照提供至由彼群組照明之區域。在某些實施方案中,群組中之每一者可獨立於其餘群組而操作。另外或另一選擇係,在某些實施方案中,可根據下文關於圖16所論述之程序1600操作每一群組。At
在步驟1540處,執行對是否產生一重新分組事件之一偵測。在某些實施方案中,可由於一使用者輸入而產生重新分組事件。若偵測到一重新分組事件,則程序1500返回至步驟1510且將LED重新分組。根據本發明之態樣,將LED重新分組可包含以下各項中之一或多者:將所有LED合併成一單個群組、將至少兩個現有群組合併成一個群組及/或將至少一個現有群組劃分成多個群組。就此而言,其中將LED矩陣中之所有LED指派給同一群組之替代實施方案係可能的。此外,其中群組中之每一者由存在於一不同分段式LED晶片中之所有LED組成之替代實施方案係可能的。At
圖16係根據本發明之態樣之用於操作一給定LED群組之一程序1600 (如關於程序1500之步驟1530所論述)之一實例之一流程圖。在步驟1610處,至少部分地由給定群組中之一或多個偵測器LED產生一第一信號。在步驟1620處,基於第一信號而改變群組中之發射器LED之亮度。在步驟1630處,偵測至少部分地由給定群組中之一或多個發射器LED產生之一第二信號。在步驟1640處,基於第二信號而改變群組中之LED中之至少一者之操作模式。16 is a flow diagram of an example of a
根據本發明之態樣,改變一給定LED之操作模式可包含將彼LED之偏壓自逆向改變至正向或自正向改變至逆向。舉例而言,若將一逆向偏壓施加至一發射器LED,則彼LED因此可開始作為一偵測器LED而操作。作為另一實例,若將一正向偏壓施加至一偵測器LED,則彼LED可開始作為一發射器LED而操作。According to aspects of the invention, changing the mode of operation of a given LED may include changing the bias voltage of that LED from reverse to forward or from forward to reverse. For example, if a reverse bias voltage is applied to an emitter LED, that LED can thus start operating as a detector LED. As another example, if a forward bias voltage is applied to a detector LED, that LED can begin to operate as an emitter LED.
在某些實施方案中,可回應於具有滿足一預定臨限值之一特性之第二信號而執行步驟1640。舉例而言,若第二信號之動態範圍降至一臨限值以下,則可改變一或多個發射器LED之偏壓以增加群組中之偵測器LED之數目且獲得較大敏感度。作為另一實例,若第二信號指示未充分地照明LED群組所針對之區域,則可改變一偵測器LED之偏壓以將一額外發射器LED添加至群組。In some implementations,
在某些實施方案中,可如此連續地操作群組中之一或多個偵測器LED。另一選擇係,在某些實施方案中,可將一或多個偵測器LED自正向偏壓週期性地切換至逆向偏壓以獲得一讀數,且然後返回至正向偏壓。可非常迅速地(例如<10ns)發生偏壓極性之切換以允許光收集。在某些實施方案中,可以一高頻率切換給定群組中之一或多個偵測器LED之偏壓之極性,使得該切換對於人眼可係察覺不到的。In some implementations, one or more detector LEDs in a group may be so continuously operated. Alternatively, in some implementations, one or more detector LEDs may be periodically switched from forward bias to reverse bias to take a reading, and then back to forward bias. Switching of bias polarity can occur very rapidly (eg <10 ns) to allow light collection. In certain implementations, the polarity of the bias voltage for one or more detector LEDs in a given group can be switched at such a high frequency that the switching is imperceptible to the human eye.
圖17係根據本發明之態樣之用於操作一LED矩陣之一程序1700之一實例之一流程圖。該LED矩陣可由一單個分段式LED組成,或包含多個分段式LED晶片,及/或包含一或多個非分段式LED晶片。可由以操作方式耦合至LED矩陣之任何適合類型之控制器執行程序1700。17 is a flowchart of an example of a
在步驟1710處,複數個LED中之LED中之至少某些LED經組態以藉由將正向偏壓施加至該等LED而操作為發射器LED。在步驟1720處,該複數個LED中之剩餘LED經組態以藉由將一逆向偏壓施加至該等LED而操作為偵測器LED。At
在步驟1730處,基於由與一給定發射器LED共置之一或多個偵測器LED產生之一信號而改變矩陣中之該給定發射器LED之亮度。根據本發明之態樣,兩個LED可在其處於LED矩陣之同一區段(諸如一右上四分之一、左上四分之一、右下四分之一或一左下四分之一等)中時經共置。At
另外或另一選擇係,兩個LED可在其在LED矩陣中彼此不超過預定距離時經共置。在某些實施方案中,一第一LED與一第二LED之間的距離可等於沿著連接第一LED與第二LED之一筆直線設置之其他LED之計數。例如,若第一LED及第二LED彼此緊挨地定位,則該距離可係零。作為另一實例,若第一LED與第二LED之間存在一個其他LED,則其之間的距離可係1。在某些實施方案中,可基於彼等LED之位址而判定兩個LED之間的距離。Additionally or alternatively, two LEDs may be co-located when they do not exceed a predetermined distance from each other in the LED matrix. In some implementations, the distance between a first LED and a second LED may be equal to the count of other LEDs disposed along a straight line connecting the first LED and the second LED. For example, if the first LED and the second LED are positioned next to each other, the distance may be zero. As another example, the distance between the first LED and the second LED may be 1 if there is one other LED between them. In certain implementations, the distance between two LEDs can be determined based on the addresses of those LEDs.
另外或另一選擇係,在某些實施方案中,若兩個LED與同一光學元件對準,則該兩個LED可經共置。(例如,參見圖11A至圖11B)。另外或另一選擇係,在某些實施方案中,若兩個LED係同一LED群組之一部分,則該兩個LED可經共置。在某些態樣中,可基於儲存於LED矩陣之控制器之一記憶體中之一資料結構而判定兩個LED是否共置。該資料結構可包含複數個清單,其中每一清單包含一特定群組中之LED之識別符。另外或另一選擇係,該資料結構可包含複數個清單,其中每一清單包含與一較大光學單元中之一特定光學元件對準之LED之識別符。(例如,參見展示光學單元1120中之光學元件1122之圖11A至圖11B。)Additionally or alternatively, in certain implementations, two LEDs can be co-located if the two LEDs are aligned with the same optical element. (See, eg, FIGS. 11A-11B ). Additionally or alternatively, in certain embodiments, two LEDs may be co-located if they are part of the same LED group. In some aspects, it may be determined whether two LEDs are co-located based on a data structure stored in a memory of a controller of the LED matrix. The data structure may contain a plurality of lists, where each list contains identifiers for LEDs in a particular group. Additionally or alternatively, the data structure may include a plurality of lists, where each list includes an identifier for an LED aligned with a particular optical element in a larger optical unit. (See, eg, FIGS. 11A-11B showing optical elements 1122 in
儘管在適應性汽車光照之情境中呈現本文中所揭示之概念中之某些概念,但將理解,可在任何情境中採用所揭示分段式LED晶片實施方案、適應性光照系統實施方案及用於操作適應性光照系統之程序。舉例而言,可在室內光照系統、街道光照系統、舞台光照系統、裝飾光照系統及溫室光照系統中使用該等概念。因此,本發明並不限於本文中所呈現之實例。Although some of the concepts disclosed herein are presented in the context of adaptive automotive lighting, it will be understood that the disclosed segmented LED chip implementations, adaptive lighting system implementations, and applications can be employed in any context. Procedures for operating the adaptive lighting system. For example, the concepts can be used in interior lighting systems, street lighting systems, stage lighting systems, decorative lighting systems and greenhouse lighting systems. Accordingly, the invention is not limited to the examples presented herein.
提供圖1至圖17僅作為一實例。關於此等圖所論述之元件中之至少某些元件可以不同次序來配置、經組合及/或共同省略。將理解,提供本文中所闡述之實例以及表述為「諸如」、「例如」、「包含」、「在某些態樣中」、「在某些實施方案中」及諸如此類之子句不應被解釋為將所揭示標的物限於特定實例。1 to 17 are provided as an example only. At least some of the elements discussed with respect to these figures may be arranged in a different order, combined, and/or omitted altogether. It will be understood that the provision of examples set forth herein and clauses such as "such as", "for example", "comprising", "in some aspects", "in certain embodiments" and the like are not to be interpreted It is intended to limit the disclosed subject matter to specific examples.
詳細闡述本發明之後,熟習此項技術者將瞭解,在給出本揭示內容之情況下,可在不背離本文中所闡述之發明概念之精神之情況下對本發明做出修改。因此,並非意欲將本發明之範疇限於所圖解說明及闡述之特定實施例。Having described the invention in detail, those skilled in the art will appreciate that, given the present disclosure, modifications can be made to the invention without departing from the spirit of the inventive concepts set forth herein. Therefore, it is not intended to limit the scope of the invention to the specific embodiments illustrated and described.
100‧‧‧分段式發光二極體晶片 110‧‧‧發光二極體 120‧‧‧溝槽 130‧‧‧觸點 300a‧‧‧分段式發光二極體晶片 300b‧‧‧分段式發光二極體晶片 300c‧‧‧分段式發光二極體晶片 312a‧‧‧發光二極體 312b‧‧‧發光二極體 312c‧‧‧發光二極體 314a‧‧‧發光二極體 314b‧‧‧發光二極體 314c‧‧‧發光二極體 400‧‧‧分段式發光二極體晶片 410‧‧‧發光二極體 420‧‧‧發光二極體/第一發光二極體/第二發光二極體/第三發光二極體 430‧‧‧溝槽 500‧‧‧分段式發光二極體晶片 510‧‧‧發光二極體 520‧‧‧發光二極體 530‧‧‧溝槽 600‧‧‧適應性光照系統 610‧‧‧分段式發光二極體晶片 612a‧‧‧發光二極體 612b‧‧‧發光二極體 612c‧‧‧發光二極體 612d‧‧‧發光二極體 614a‧‧‧發光二極體 614b‧‧‧發光二極體 614c‧‧‧發光二極體 614d‧‧‧發光二極體 620‧‧‧控制器 622a‧‧‧驅動器電路 622b‧‧‧驅動器電路 622c‧‧‧驅動器電路 622d‧‧‧驅動器電路 624‧‧‧控制電路 700‧‧‧適應性光照系統 710‧‧‧分段式發光二極體晶片 720‧‧‧控制器 722‧‧‧處理器 724‧‧‧記憶體 726‧‧‧驅動器 800‧‧‧道路 810‧‧‧車輛 812‧‧‧前照燈 814‧‧‧前照燈 822‧‧‧空間/照明空間 824‧‧‧空間 830‧‧‧車輛 832‧‧‧前照燈 834‧‧‧前照燈 842‧‧‧空間/照明空間 844‧‧‧空間 1010‧‧‧部分 1020‧‧‧部分 1030‧‧‧部分 1040‧‧‧部分 1050‧‧‧部分 1060‧‧‧部分 1110‧‧‧分段式發光二極體晶片/發光二極體晶片 1112a-i‧‧‧區段 1120‧‧‧光學單元 1122a-i‧‧‧光學元件 1130a‧‧‧中央方向 1130b‧‧‧中央方向 1130c‧‧‧中央方向 1210a-1210i‧‧‧部分 1300‧‧‧程序 1310‧‧‧步驟 1320‧‧‧步驟 1330‧‧‧步驟 1400‧‧‧分段式發光二極體晶片 1410‧‧‧發光二極體 1420‧‧‧溝槽 1430‧‧‧柵欄結構 1500‧‧‧程序 1510‧‧‧步驟 1520‧‧‧步驟 1530‧‧‧步驟 1540‧‧‧步驟 1600‧‧‧程序 1610‧‧‧步驟 1620‧‧‧步驟 1630‧‧‧步驟 1640‧‧‧步驟 1700‧‧‧程序 1710‧‧‧步驟 1720‧‧‧步驟 1730‧‧‧步驟 A‧‧‧群組 B‧‧‧群組 C‧‧‧群組 D‧‧‧群組 100‧‧‧Segmented LED chips 110‧‧‧LED 120‧‧‧groove 130‧‧‧contact 300a‧‧‧Segmented LED chip 300b‧‧‧Segmented LED chip 300c‧‧‧Segmented LED chip 312a‧‧‧Light-emitting diodes 312b‧‧‧Light-emitting diodes 312c‧‧‧Light-emitting diodes 314a‧‧‧Light-emitting diodes 314b‧‧‧Light-emitting diodes 314c‧‧‧Light-emitting diodes 400‧‧‧Segmented LED chips 410‧‧‧Light-emitting diodes 420‧‧‧Light-emitting diode/first light-emitting diode/second light-emitting diode/third light-emitting diode 430‧‧‧groove 500‧‧‧Segmented LED chips 510‧‧‧LED 520‧‧‧LED 530‧‧‧groove 600‧‧‧Adaptive lighting system 610‧‧‧Segmented Light Emitting Diode Chip 612a‧‧‧Light-emitting diodes 612b‧‧‧Light-emitting diodes 612c‧‧‧Light-emitting diodes 612d‧‧‧Light-emitting diodes 614a‧‧‧Light-emitting diodes 614b‧‧‧Light-emitting diodes 614c‧‧‧Light-emitting diodes 614d‧‧‧Light-emitting diodes 620‧‧‧Controller 622a‧‧‧Driver Circuit 622b‧‧‧Driver Circuit 622c‧‧‧Driver Circuit 622d‧‧‧Driver Circuit 624‧‧‧Control circuit 700‧‧‧Adaptive lighting system 710‧‧‧Segmented Light Emitting Diode Chip 720‧‧‧Controller 722‧‧‧processor 724‧‧‧memory 726‧‧‧Driver 800‧‧‧road 810‧‧‧vehicle 812‧‧‧Headlamp 814‧‧‧Headlamp 822‧‧‧Space/Lighting Space 824‧‧‧space 830‧‧‧vehicle 832‧‧‧Headlamp 834‧‧‧Headlamps 842‧‧‧Space/Lighting Space 844‧‧‧space Section 1010‧‧‧ Section 1020‧‧‧ Section 1030‧‧‧ Section 1040‧‧‧ Section 1050‧‧‧ Section 1060‧‧‧ 1110‧‧‧Segmented Light-Emitting Diode Chip/Light-Emitting Diode Chip Section 1112a-i‧‧‧ 1120‧‧‧optical unit 1122a-i‧‧‧Optical components 1130a‧‧‧central direction 1130b‧‧‧central direction 1130c‧‧‧central direction Part 1210a-1210i‧‧‧ 1300‧‧‧procedure 1310‧‧‧step 1320‧‧‧step 1330‧‧‧step 1400‧‧‧Segmented LED chip 1410‧‧‧Light-emitting diode 1420‧‧‧groove 1430‧‧‧Fence structure 1500‧‧‧Procedure 1510‧‧‧step 1520‧‧‧step 1530‧‧‧step 1540‧‧‧step 1600‧‧‧procedure 1610‧‧‧step 1620‧‧‧step 1630‧‧‧step 1640‧‧‧step 1700‧‧‧procedure 1710‧‧‧step 1720‧‧‧step 1730‧‧‧step A‧‧‧group B‧‧‧group C‧‧‧group D‧‧‧group
下文所闡述之圖式僅出於圖解說明目的。該等圖式不意欲限制本發明之範疇。圖中所展示之相似參考符號在各種實施例中指定相同部件。The drawings set forth below are for illustration purposes only. These drawings are not intended to limit the scope of the invention. Like reference symbols shown in the figures designate the same components in various embodiments.
圖1係根據本發明之態樣之一分段式發光二極體(LED)晶片之一實例之一示意性俯視圖;1 is a schematic top view of an example of a segmented light emitting diode (LED) chip according to an aspect of the present invention;
圖2係根據本發明之態樣之圖1之分段式LED晶片之一實例之一示意性側視圖;2 is a schematic side view of one example of the segmented LED chip of FIG. 1 in accordance with aspects of the present invention;
圖3A係圖解說明根據本發明之態樣之可賦予一分段式LED晶片之一操作型樣之一實例之一圖式;3A is a diagram illustrating an example of an operational pattern that can be imparted to a segmented LED chip in accordance with aspects of the present invention;
圖3B係圖解說明根據本發明之態樣之可賦予一分段式LED晶片之一操作型樣之另一實例之一圖式;3B is a diagram illustrating another example of an operational pattern that can be imparted to a segmented LED chip in accordance with aspects of the present invention;
圖3C係圖解說明根據本發明之態樣之可賦予一分段式LED晶片之一操作型樣之再一實例之一圖式;3C is a diagram illustrating yet another example of an operational pattern that can be imparted to a segmented LED chip in accordance with aspects of the present invention;
圖4係根據本發明之態樣之一分段式LED晶片之另一實例之一示意性俯視圖;4 is a schematic top view of another example of a segmented LED chip according to an aspect of the present invention;
圖5係根據本發明之態樣之一分段式LED晶片之另一實例之一示意性俯視圖;5 is a schematic top view of another example of a segmented LED chip according to an aspect of the present invention;
圖6係根據本發明之態樣之一適應性光照系統之一實例之一示意圖;Fig. 6 is a schematic diagram of an example of an adaptive lighting system according to an aspect of the present invention;
圖7係根據本發明之態樣之一適應性光照系統之另一實例之一示意圖;Fig. 7 is a schematic diagram of another example of an adaptive lighting system according to aspects of the present invention;
圖8係圖解說明根據本發明之態樣之使用一分段式LED晶片之一適應性汽車光照系統之操作之一實例之一圖式;8 is a diagram illustrating an example of the operation of an adaptive automotive lighting system using a segmented LED chip in accordance with aspects of the present invention;
圖9係圖解說明根據本發明之態樣之可由圖8之適應性汽車光照系統採取之一適應性動作之一實例之一圖式;9 is a diagram illustrating an example of an adaptive action that may be taken by the adaptive automotive lighting system of FIG. 8 in accordance with aspects of the present invention;
圖10A係圖解說明根據本發明之態樣之可由圖8之適應性汽車光照系統採取之另一適應性動作之一實例之一圖式;10A is a diagram illustrating an example of another adaptive action that may be taken by the adaptive automotive lighting system of FIG. 8 in accordance with aspects of the present invention;
圖10B係圖解說明根據本發明之態樣之可由圖8之適應性汽車光照系統採取之另一適應性動作之一實例之一圖式;10B is a diagram illustrating an example of another adaptive action that may be taken by the adaptive automotive lighting system of FIG. 8 in accordance with aspects of the present invention;
圖11A係根據本發明之態樣之可在圖8之適應性汽車光照系統中使用之一前照燈之一示意性分解視圖;11A is a schematic exploded view of a headlamp that may be used in the adaptive automotive lighting system of FIG. 8 in accordance with aspects of the present invention;
圖11B係根據本發明之態樣之圖11A之前照燈之一示意性側視圖;11B is a schematic side view of the headlamp of FIG. 11A according to aspects of the present invention;
圖12係圖解說明根據本發明之態樣之圖11A之前照燈之操作之一圖式;12 is a diagram illustrating the operation of the headlamp of FIG. 11A in accordance with aspects of the present invention;
圖13係根據本發明之態樣之用於避免一分段式LED晶片中之發射器LED與反射器LED之間的串擾之一程序之一實例之流程圖;13 is a flowchart of one example of a procedure for avoiding crosstalk between emitter LEDs and reflector LEDs in a segmented LED chip in accordance with aspects of the present invention;
圖14A係根據本發明之態樣之經最佳化以避免設置於晶片之晶粒上之發射器LED與偵測器LED之間的串擾之一分段式LED晶片之一實例之示意性俯視圖;14A is a schematic top view of an example of a segmented LED chip optimized to avoid crosstalk between emitter LEDs and detector LEDs disposed on dies of the chip in accordance with aspects of the present invention. ;
圖14B係根據本發明之態樣之圖14A之分段式LED晶片之示意性側視圖;14B is a schematic side view of the segmented LED chip of FIG. 14A in accordance with aspects of the present invention;
圖15係根據本發明之態樣之用於操作一LED矩陣之一程序之一實例之一流程圖;15 is a flowchart of an example of a procedure for operating an LED matrix in accordance with aspects of the present invention;
圖16係根據本發明之態樣之用於操作一LED矩陣中之一LED群組之一程序之一實例之一流程圖;及16 is a flowchart of an example of a procedure for operating a group of LEDs in an LED matrix according to aspects of the invention; and
圖17係根據本發明之態樣之用於操作一LED矩陣之一程序之一實例之一流程圖。17 is a flowchart of an example of a procedure for operating an LED matrix in accordance with aspects of the present invention.
600‧‧‧適應性光照系統 600‧‧‧Adaptive lighting system
610‧‧‧分段式發光二極體晶片 610‧‧‧Segmented Light Emitting Diode Chip
612a‧‧‧發光二極體 612a‧‧‧Light-emitting diodes
612b‧‧‧發光二極體 612b‧‧‧Light-emitting diodes
612c‧‧‧發光二極體 612c‧‧‧Light-emitting diodes
612d‧‧‧發光二極體 612d‧‧‧Light-emitting diodes
614a‧‧‧發光二極體 614a‧‧‧Light-emitting diodes
614b‧‧‧發光二極體 614b‧‧‧Light-emitting diodes
614c‧‧‧發光二極體 614c‧‧‧Light-emitting diodes
614d‧‧‧發光二極體 614d‧‧‧Light-emitting diodes
620‧‧‧控制器 620‧‧‧Controller
622a‧‧‧驅動器電路 622a‧‧‧Driver Circuit
622b‧‧‧驅動器電路 622b‧‧‧Driver Circuit
622c‧‧‧驅動器電路 622c‧‧‧Driver Circuit
622d‧‧‧驅動器電路 622d‧‧‧Driver Circuit
624‧‧‧控制電路 624‧‧‧Control circuit
A‧‧‧群組 A‧‧‧group
B‧‧‧群組 B‧‧‧group
C‧‧‧群組 C‧‧‧group
D‧‧‧群組 D‧‧‧group
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US15/948,642 US10285236B2 (en) | 2017-09-08 | 2018-04-09 | Optoelectronic device and adaptive illumination system using the same |
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JP2019048627A (en) | 2019-03-28 |
CN109469839B (en) | 2021-08-31 |
JP6641435B2 (en) | 2020-02-05 |
TW201922052A (en) | 2019-06-01 |
KR102026613B1 (en) | 2019-09-30 |
WO2019050939A1 (en) | 2019-03-14 |
KR20190028342A (en) | 2019-03-18 |
CN109469839A (en) | 2019-03-15 |
JP7000410B2 (en) | 2022-02-04 |
JP2020095963A (en) | 2020-06-18 |
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