TWI777447B - Driving circuit - Google Patents
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Description
本案係與顯示裝置有關,且特別是有關於一種應用於微發光二極體顯示器之驅動電路。The present case is related to display devices, and in particular, to a driving circuit applied to a micro-LED display.
微發光二極體(micro LED)顯示器具有高對比、高色彩飽和度和發光效率佳等優點,使其成為下一世代熱門技術之一。傳統的微發光二極體顯示器更新顯示畫面時,進行資料寫入的驅動電路會關閉其微發光二極體,以避免微發光二極體產生不穩定的暫態亮度。然而,驅動電路於關閉與點亮狀態之間的快速切換會造成顯示畫面閃爍。故,如何提供高顯示品質的微發光二極體驅動電路與顯示器,實為業界有待解決的技術問題。The advantages of high contrast ratio, high color saturation, and good luminous efficiency of micro light-emitting diode (micro LED) displays make it one of the next-generation hot technologies. When the conventional micro-LED display updates the display screen, the driving circuit for data writing will turn off the micro-LED to avoid unstable transient brightness generated by the micro-LED. However, the rapid switching of the driving circuit between the off and on states may cause the display screen to flicker. Therefore, how to provide a micro-LED driving circuit and a display with high display quality is a technical problem to be solved in the industry.
發明內容旨在提供本揭示內容的簡化摘要,以使閱讀者對本揭示內容具備基本的理解。此發明內容並非本揭示內容的完整概述,且其用意並非在指出本案實施例的重要/關鍵元件或界定本案的範圍。SUMMARY The purpose of this summary is to provide a simplified summary of the disclosure to give the reader a basic understanding of the disclosure. This summary is not an exhaustive overview of the disclosure, and it is not intended to identify key/critical elements of the present embodiments or to delimit the scope of the present disclosure.
本案內容之一技術態樣係關於一種驅動電路。此驅動電路包含至少一第一驅動單元、至少一第二驅動單元、驅動電晶體及發光二極體。至少一第一驅動單元用以根據第一脈衝信號[n]以儲存第一資料電壓,並根據第一資料電壓以及掃描信號[n]以決定是否提供第一電源供應電壓。至少一第二驅動單元用以根據第二脈衝信號[n]以儲存第二資料電壓,並根據第二資料電壓以及第一電源供應電壓以決定是否提供第二電源供應電壓,其中第一脈衝信號[n]、第二脈衝信號[n]及掃描信號[n]對應第1級至第n級訊號,n為大於1之正整數。驅動電晶體耦接於第二驅動電路,用以根據第二資料電壓以輸出第二電源供應電壓。發光二極體耦接於驅動電晶體,用以根據第二電源供應電壓以進行發光。One technical aspect of the content of this case relates to a driving circuit. The driving circuit includes at least a first driving unit, at least a second driving unit, a driving transistor and a light emitting diode. The at least one first driving unit is used for storing the first data voltage according to the first pulse signal [n], and determining whether to provide the first power supply voltage according to the first data voltage and the scanning signal [n]. At least one second driving unit is used for storing the second data voltage according to the second pulse signal [n], and determining whether to provide the second power supply voltage according to the second data voltage and the first power supply voltage, wherein the first pulse signal [n], the second pulse signal [n] and the scan signal [n] correspond to the first to nth level signals, and n is a positive integer greater than 1. The driving transistor is coupled to the second driving circuit for outputting the second power supply voltage according to the second data voltage. The light emitting diode is coupled to the driving transistor for emitting light according to the second power supply voltage.
因此,根據本案之技術內容,本案實施例所示之驅動電路得以適用於高顯示品質與多脈衝(Multi-Pulse)發光的微發光二極體驅動電路。此外,本案之驅動電路得以抗電壓衰退(Anti-IR Drop),因此,可以改善顯示器亮度顯示不均的問題。Therefore, according to the technical content of this application, the driving circuit shown in the embodiment of this application can be applied to a micro-LED driving circuit with high display quality and multi-pulse light emission. In addition, the driving circuit of this application can resist the voltage drop (Anti-IR Drop), therefore, the problem of uneven display brightness of the display can be improved.
在參閱下文實施方式後,本案所屬技術領域中具有通常知識者當可輕易瞭解本案之基本精神及其他發明目的,以及本案所採用之技術手段與實施態樣。After referring to the following embodiments, those with ordinary knowledge in the technical field of this case can easily understand the basic spirit and other inventive purposes of this case, as well as the technical means and implementation modes adopted in this case.
為了使本揭示內容的敘述更加詳盡與完備,下文針對了本案的實施態樣與具體實施例提出了說明性的描述;但這並非實施或運用本案具體實施例的唯一形式。實施方式中涵蓋了多個具體實施例的特徵以及用以建構與操作這些具體實施例的方法步驟與其順序。然而,亦可利用其他具體實施例來達成相同或均等的功能與步驟順序。In order to make the description of the present disclosure more detailed and complete, the following provides an illustrative description for the implementation aspects and specific embodiments of the present case; but this is not the only form of implementing or using the specific embodiments of the present case. The features of various specific embodiments as well as method steps and sequences for constructing and operating these specific embodiments are encompassed in the detailed description. However, other embodiments may also be utilized to achieve the same or equivalent function and sequence of steps.
除非本說明書另有定義,此處所用的科學與技術詞彙之含義與本案所屬技術領域中具有通常知識者所理解與慣用的意義相同。此外,在不和上下文衝突的情形下,本說明書所用的單數名詞涵蓋該名詞的複數型;而所用的複數名詞時亦涵蓋該名詞的單數型。Unless otherwise defined in this specification, the scientific and technical terms used herein have the same meanings as understood and commonly used by those of ordinary skill in the technical field to which this case belongs. In addition, unless contradicting the context, the singular noun used in this specification covers the plural form of the noun; and the plural noun used also covers the singular form of the noun.
另外,關於本文中所使用之「耦接」或「連接」,可指二或多個元件相互直接作實體或電性接觸,或是相互間接作實體或電性接觸,亦可指二或多個元件相互操作或動作。In addition, "coupled" or "connected" as used herein may refer to two or more elements in direct physical or electrical contact with each other, or in indirect physical or electrical contact with each other, or two or more elements Elements interact or act with each other.
在本文中,用語『電路』泛指由一或多個電晶體與/或一或多個主被動元件按一定方式連接以處理訊號的物件。As used herein, the term "circuit" generally refers to an object that is connected in a certain manner by one or more transistors and/or one or more active and passive components to process signals.
在說明書及申請專利範圍中使用了某些詞彙來指稱特定的元件。然而,所屬技術領域中具有通常知識者應可 理解,同樣的元件可能會用不同的名詞來稱呼。說明書及申請專利範圍並不以名稱的差異做為區分元件的方式,而是以元件在功能上的差異來做為區分的基準。在說明書及申請專利範圍所提及的「包含」為開放式的用語,故應解釋成「包含但不限定於」。Certain terms are used in the specification and claims to refer to particular elements. However, those of ordinary skill in the art should understand that the same elements may be referred to by different nouns. The description and the scope of the patent application do not use the difference in name as a way of distinguishing elements, but use the difference in function of the elements as a basis for distinguishing. The "comprising" mentioned in the description and the scope of the patent application is an open-ended term, so it should be interpreted as "including but not limited to".
第1圖係依照本揭露一實施例繪示一種驅動電路100的示意圖。如圖所示,驅動電路100包含至少一第一驅動單元110、至少一第二驅動單元120、驅動電晶體T5及發光二極體D1。於連接關係上,至少一第一驅動單元110耦接於至少一第二驅動單元120,至少一第二驅動單元120耦接於驅動電晶體T5,驅動電晶體T5耦接於發光二極體D1。FIG. 1 is a schematic diagram of a
為提供高顯示品質的微發光二極體驅動電路技術,本案提供如第1圖所示之驅動電路100,其相關操作詳細說明如後。In order to provide a high display quality micro-LED driving circuit technology, the present application provides a
在一實施例中,至少一第一驅動單元110用以根據第一脈衝信號[n]以儲存第一資料電壓,並根據第一資料電壓以及掃描信號[n]以決定是否提供第一電源供應電壓。至少一第二驅動單元120用以根據第二脈衝信號[n]以儲存第二資料電壓,並根據第二資料電壓以及第一電源供應電壓以決定是否提供第二電源供應電壓,其中第一脈衝信號[n]、第二脈衝信號[n]及掃描信號 [n]對應第1級至第n級訊號,n為大於1之正整數。驅動電晶體T5用以根據第二資料電壓以輸出第二電源供應電壓。發光二極體D1用以根據第二電源供應電壓以進行發光。In one embodiment, at least one
為使驅動電路100之上述操作易於理解,請一併參閱第2圖至第6圖,第2圖係依照本案揭露一實施例繪示多種控制信號位準的波形示意圖,第3圖至第6圖係依照本案揭露一實施例繪示如第1圖中所示之驅動電路100的操作示意圖。
In order to make the above operation of the
如第1圖及第2圖所示,至少一第一驅動單元110根據第一脈衝信號S1[n]以儲存第一資料電壓DATA,並根據第一資料電壓DATA以及掃描信號Sweep[n]以決定是否提供第一電源供應電壓VDD1。第一脈衝信號S1[n]及掃描信號Sweep[n]對應第1級至第n級訊號,n為大於1之正整數。舉例而言,至少一第一驅動單元110透過提供第一資料電壓DATA與掃描信號Sweep[n]至電晶體T3的閘極,藉此控制是否提供第一電源供應電壓VDD1。此外,第一脈衝信號S1[n]可以脈衝寬度調變(Pulse Width Modulation,PWM)信號來實現。
As shown in FIG. 1 and FIG. 2, at least one
隨後,至少一第二驅動單元120用以根據第二脈衝信號S2[n]以儲存第二資料電壓DATA,並根據第二資料電壓DATA以及第一電源供應電壓VDD1以決定是否提供第二電源供應電壓VDD2。第一脈衝信號S1[n]、第二脈衝信號S2[n]及掃描信號Sweep[n]對應第1級至第n級訊號,n為大於1之正整數。此外,第二脈衝信號S2[n]可以脈衝振幅調變(Pulse-amplitude modulation,PAM)信號來實現。在一些實施例中,第一脈衝信號S1[n]與第二脈衝信號S2[n]可以具有時序差異,但本案不以此為限。
Then, at least one
然後,驅動電晶體T5根據第二資料電壓DATA以輸出第二電源供應電壓VDD2。接著,發光二極體D1根據第二電源供應電壓VDD2以進行發光。舉例而言,至少一第二驅動單元120透過提供第二資料電壓DATA與第一電源供應電壓VDD1至驅動電晶體T5的閘極,藉此控制是否提供第二電源供應電壓VDD2給發光二極體D1。此外,電晶體T3與驅動電晶體T5可以任何合適種類的P型電晶體來實現,例如P型薄膜電晶體(Thin-film Transistor,TFT)或是P型金氧半導體場效應電晶體(Metal-Oxide-Semiconductor Field Effect Transistor,MOSFET)等。
Then, the driving transistor T5 outputs the second power supply voltage VDD2 according to the second data voltage DATA. Next, the light emitting diode D1 emits light according to the second power supply voltage VDD2. For example, at least one
請一併參照第2圖與第3圖,在一實施例中,至少一第一驅動單元110包括第一儲存電容C1,且至少一第二驅動單元120包括第二儲存電容C2。在第一階段P1時,第一儲存電容C1根據第一開關訊號RS[n]而於第一端及第二端分別儲存第一電源供應電壓VDD1及第一下拉電壓Vref。此外,第二儲存電容C2根據第一開關訊號RS[n]而於第三端及第四端分別儲存第一電源供應電壓VDD1及第一下拉電壓Vref。再者,發光二極體D1根據第一開關訊號RS[n]而進行重置。上述第一開關訊號RS[n]對應第1級至第n級訊號。
Referring to FIG. 2 and FIG. 3 together, in one embodiment, at least one
請一併參照第2圖與第4圖,在第二階段P2 時,第一儲存電容C1根據第一脈衝信號S1[n]而於第一端及第二端分別儲存第一資料電壓DATA及第一補償電壓。此外,第二儲存電容C2維持第一階段儲存的第一電源供應電壓VDD1及第一下拉電壓Vref。舉例而言,若第一電源供應電壓VDD1為5V,電晶體T3的閾值電壓為Vth_T3,則第一補償電壓為5-Vth_T3。 Please refer to Figure 2 and Figure 4 together, in the second stage P2 At the time, the first storage capacitor C1 stores the first data voltage DATA and the first compensation voltage at the first end and the second end respectively according to the first pulse signal S1[n]. In addition, the second storage capacitor C2 maintains the first power supply voltage VDD1 and the first pull-down voltage Vref stored in the first stage. For example, if the first power supply voltage VDD1 is 5V and the threshold voltage of the transistor T3 is Vth_T3, the first compensation voltage is 5-Vth_T3.
請一併參照第2圖與第5圖,在第三階段P3時,第一儲存電容C1維持第一階段儲存的第一資料電壓DATA及第一補償電壓。此外,第二儲存電容C2根據第二脈衝信號S2[n]而於第三端及第四端分別儲存第二資料電壓DATA及第二補償電壓。舉例而言,若第二電源供應電壓VDD2為7V,驅動電晶體T5的閾值電壓為Vth_T5,則第二補償電壓為7-Vth_T5。 Please refer to FIG. 2 and FIG. 5 together. In the third stage P3, the first storage capacitor C1 maintains the first data voltage DATA and the first compensation voltage stored in the first stage. In addition, the second storage capacitor C2 stores the second data voltage DATA and the second compensation voltage at the third terminal and the fourth terminal respectively according to the second pulse signal S2[n]. For example, if the second power supply voltage VDD2 is 7V and the threshold voltage of the driving transistor T5 is Vth_T5, the second compensation voltage is 7-Vth_T5.
請一併參照第2圖與第6圖,在第四階段P4時,第一儲存電容C1根據第二開關訊號EM[n]而於第一端及第二端分別儲存掃描信號Sweep[n]及耦合電壓。此外,第二驅動單元120根據第二儲存電容C2所儲存的第二資料電壓DATA及第二補償電壓而驅動驅動電晶體T5,俾使驅動電晶體T5輸出第二電源供應電壓VDD2。此外,發光二極體D1根據第二電源供應電壓VDD2而進行發光。再者,第二開關訊號EM[n]對應第1級至第n級訊號。舉例而言,若掃描
信號Sweep[n]為5V、第一補償電壓為5-Vth_T3,則耦合電壓為5+(5-Vth_T3)=10-Vth_T3,在耦合電壓為正值的情況下,由於電晶體T3為P型電晶體,此時電晶體T3狀態為關閉。
Please refer to FIG. 2 and FIG. 6 together, in the fourth stage P4, the first storage capacitor C1 stores the scan signal Sweep[n] at the first end and the second end respectively according to the second switch signal EM[n] and coupling voltage. In addition, the
在第五階段P5時,本案會在第6圖的操作狀態下而有不同變化,例如掃描信號Sweep[n]之電壓位準會逐漸轉為低位準,第一驅動單元110根據低位準的掃描信號Sweep[n]而提供第一電源供應電壓VDD1至第二驅動單元120。此外,第二驅動單元120根據第一電源供應電壓VDD1而驅動驅動電晶體T5,俾使驅動電晶體T5停止輸出第二電源供應電壓VDD2。舉例而言,在第五階段P5的時間末端,若掃描信號Sweep[n]為低位準,則會耦合低位準至電晶體T3的閘極,致使電晶體T3開啟並提供第一電源供應電壓VDD1給驅動電晶體T5的閘極,由於第一電源供應電壓VDD1為正值,致使驅動電晶體T5關閉且停止提供第二電源供應電壓VDD2給發光二極體D1。
In the fifth stage P5, the present case will have different changes under the operating state shown in FIG. 6. For example, the voltage level of the scan signal Sweep[n] will gradually turn to a low level, and the
在另一實施例中,由於不同階段時,顯示面板上的各列驅動電路100陸續有抽載電流,並提供第二電源供應電壓VDD2給各列的發光二極體D1,故第二電源供應電壓VDD2的電壓值穩定,以達到抗電壓衰退(Anti-IR Drop)的功效。
In another embodiment, each
第7圖係依照本案一實施例繪示一種驅動電
路的示意圖。請參照第7圖,相較於第1圖所示之驅動電路100採用相同的開關訊號RS[n]來進行控制,第7圖之驅動電路100採用兩種開關訊號RS1[n]、RS2[n]來進行控制。為使第7圖之驅動電路100的上述操作易於理解,請一併參閱第8圖至第15圖,第8圖係依照本案揭露一實施例繪示多種控制信號位準的波形示意圖,第9圖至第15圖係依照本案揭露一實施例繪示如第7圖中所示之驅動電路100的操作示意圖。
FIG. 7 shows a driving circuit according to an embodiment of the present invention.
Schematic diagram of the road. Referring to FIG. 7, compared with the driving
請一併參照第8圖與第9圖,在第一階段P1時,第一儲存電容C1根據第一開關訊號RS1[n]而於第一端及第二端分別儲存第一電源供應電壓VDD1及第一下拉電壓Vref,其中第一開關訊號RS1[n]對應第1級至第n級訊號。 Please refer to FIG. 8 and FIG. 9 together, in the first stage P1, the first storage capacitor C1 stores the first power supply voltage VDD1 at the first end and the second end respectively according to the first switch signal RS1[n] and the first pull-down voltage Vref, wherein the first switch signal RS1[n] corresponds to the signals of the first level to the nth level.
請一併參照第8圖與第10圖,在第二階段P2時,第一儲存電容C1根據第一脈衝信號S1[n]而於第一端及第二端分別儲存第一資料電壓DATA1及第一補償電壓。此外,第二儲存電容C2根據第二開關訊號RS2[n]而於第三端及第四端分別儲存第一電源供應電壓VDD1及第一下拉電壓Vref。再者,發光二極體D1根據第二開關訊號RS2[n]而進行重置。上述第二開關訊號RS2[n]對應第1級至第n級訊號。舉例而言,若第一資料電壓DATA1為5V,電晶體T3的閾值電壓為Vth_T3,則第一補償電壓為 5-Vth_T3。此外,第一資料電壓DATA1與第一電源供應電壓VDD1可以脈衝寬度調變(Pulse Width Modulation,PWM)信號來實現。 Please refer to FIG. 8 and FIG. 10 together. In the second stage P2, the first storage capacitor C1 stores the first data voltages DATA1 and DATA1 at the first end and the second end respectively according to the first pulse signal S1[n]. the first compensation voltage. In addition, the second storage capacitor C2 stores the first power supply voltage VDD1 and the first pull-down voltage Vref at the third terminal and the fourth terminal respectively according to the second switching signal RS2[n]. Furthermore, the light-emitting diode D1 is reset according to the second switch signal RS2[n]. The above-mentioned second switch signal RS2[n] corresponds to the first-level to n-th level signals. For example, if the first data voltage DATA1 is 5V and the threshold voltage of the transistor T3 is Vth_T3, the first compensation voltage is 5-Vth_T3. In addition, the first data voltage DATA1 and the first power supply voltage VDD1 can be implemented by a pulse width modulation (Pulse Width Modulation, PWM) signal.
請一併參照第8圖與第11圖,在第三階段P3時,第一儲存電容C1維持第二階段P2儲存的第一資料電壓DATA1及第一補償電壓。再者,第二儲存電容C2根據第二脈衝信號S2[n]而於第三端及第四端分別儲存第二資料電壓DATA2及第二補償電壓。舉例而言,若第二資料電壓DATA2為7V,驅動電晶體T5的閾值電壓為Vth_T5,則第二補償電壓為7-Vth_T5。此外,第二資料電壓DATA2可以脈衝振幅調變(Pulse-amplitude modulation,PAM)信號來實現。 Please refer to FIG. 8 and FIG. 11 together. In the third stage P3, the first storage capacitor C1 maintains the first data voltage DATA1 and the first compensation voltage stored in the second stage P2. Furthermore, the second storage capacitor C2 stores the second data voltage DATA2 and the second compensation voltage at the third terminal and the fourth terminal respectively according to the second pulse signal S2[n]. For example, if the second data voltage DATA2 is 7V and the threshold voltage of the driving transistor T5 is Vth_T5, the second compensation voltage is 7-Vth_T5. In addition, the second data voltage DATA2 can be implemented by a pulse-amplitude modulation (Pulse-amplitude modulation, PAM) signal.
請一併參照第8圖與第12圖,在第四階段P4時,第一儲存電容C1根據第三開關訊號EM[n]而於第一端及第二端分別儲存掃描信號Sweep[n]及耦合電壓。此外,第二驅動單元120根據第二儲存電容C2所儲存的第二資料電壓DATA2及第二補償電壓而驅動驅動電晶體T5,俾使驅動電晶體T5輸出第二電源供應電壓VDD2。再者,發光二極體D1根據第二電源供應電壓VDD2而進行發光。上述第三開關訊號EM[n]對應第1級至第n級訊號。舉例而言,若掃描信號Sweep[n]為5V、第一補償電壓為5-Vth_T3,則耦合電壓為
5+(5-Vth_T3)=10-Vth_T3,在耦合電壓為正值的情況下,由於電晶體T3為P型電晶體,此時電晶體T3狀態為關閉。
Please refer to FIG. 8 and FIG. 12 together, in the fourth stage P4, the first storage capacitor C1 stores the scan signal Sweep[n] at the first end and the second end respectively according to the third switch signal EM[n] and coupling voltage. In addition, the
在第五階段P5時,本案會在第12圖的操作狀態下而有不同變化,例如掃描信號Sweep[n]之電壓位準會逐漸轉為低位準,第一驅動單元110根據低位準的掃描信號Sweep[n]而提供第一電源供應電壓VDD1至第二驅動單元120。此外,第二驅動單元120根據第一電源供應電壓VDD1而驅動驅動電晶體T5,俾使驅動電晶體T5停止輸出第二電源供應電壓VDD2。舉例而言,在第五階段P5的時間末端,若掃描信號Sweep[n]為低位準,則會耦合低位準至電晶體T3閘極,致使電晶體T3開啟並提供第一電源供應電壓VDD1給驅動電晶體T5的閘極,由於第一電源供應電壓VDD1為正值,致使驅動電晶體T5關閉且停止提供第二電源供應電壓VDD2給發光二極體D1。再者,第二電源供應電壓VDD2可以脈衝振幅調變(Pulse-amplitude modulation,PAM)信號來實現。
In the fifth stage P5, the present case will have different changes under the operating state shown in FIG. 12. For example, the voltage level of the scan signal Sweep[n] will gradually turn to a low level, and the
請一併參照第8圖與第13圖,在第六階段P6時,第二儲存電容C2根據第二開關訊號RS2[n]而於第三端及第四端分別儲存第一電源供應電壓VDD1及第一下拉電壓Vref。此外,發光二極體D1根據第二開關訊號RS2[n]而進行重置。 Please refer to FIG. 8 and FIG. 13 together. In the sixth stage P6, the second storage capacitor C2 stores the first power supply voltage VDD1 at the third terminal and the fourth terminal respectively according to the second switching signal RS2[n]. and the first pull-down voltage Vref. In addition, the light emitting diode D1 is reset according to the second switch signal RS2[n].
請一併參照第8圖與第14圖,在第七階段P7時,第二儲存電容C2根據第二脈衝信號S2[n]而於第三端及第四端分別儲存第二資料電壓DATA2及第二補償電壓。舉例而言,若第二脈衝信號S2[n]為7V,驅動電晶體T5的閾值電壓為Vth_T5,則第二補償電壓為7-Vth_T5。 Please refer to FIG. 8 and FIG. 14 together. In the seventh stage P7, the second storage capacitor C2 stores the second data voltages DATA2 and DATA2 at the third end and the fourth end respectively according to the second pulse signal S2[n]. The second compensation voltage. For example, if the second pulse signal S2[n] is 7V and the threshold voltage of the driving transistor T5 is Vth_T5, the second compensation voltage is 7-Vth_T5.
請一併參照第8圖與第15圖,在第八階段P8時,第二驅動單元120根據第二儲存電容C2所儲存的第二資料電壓DATA2及第二補償電壓而驅動驅動電晶體T5,俾使驅動電晶體T5輸出第二電源供應電壓VDD2。此外,發光二極體D1根據第二電源供應電壓VDD2而進行發光。舉例而言,若掃描信號Sweep[n]為5V、第一補償電壓為5-Vth_T3,則耦合電壓為5+(5-Vth_T3)=10-Vth_T3,在耦合電壓為正值的情況下,由於電晶體T3為P型電晶體,此時電晶體T3狀態為關閉。
Please refer to FIG. 8 and FIG. 15 together, in the eighth stage P8, the
在第九階段P9時,本案會在第15圖的操作狀態下而有不同變化,例如掃描信號Sweep[n]之電壓位準會逐漸轉為低位準,第一驅動單元110根據低位準的掃描信號Sweep[n]而提供至少一第一電源供應電壓VDD2至至少一第二驅動單元120。此外,至少一第二驅動單元120根據第一電源供應電壓VDD1而驅動驅動電晶體T5,俾使驅動電晶體T5停止輸出第二電源供應電壓VDD2。舉例而言,在第九階段P9
的時間末端,若掃描信號Sweep[n]為低位準,則會耦合低位準至電晶體T3閘極,致使電晶體T3開啟並提供第一電源供應電壓VDD1給驅動電晶體T5的閘極,由於第一電源供應電壓VDD1為正值,致使驅動電晶體T5關閉且停止提供第二電源供應電壓VDD2給發光二極體D1。
In the ninth stage P9, the present case will have different changes under the operating state shown in FIG. 15. For example, the voltage level of the scan signal Sweep[n] will gradually turn to a low level, and the
在另一實施例中,由於在第六階段P6至第九階段P9可以不操作第一驅動單元110,僅操作第二驅動單元120即可使發光二極體D1發光,在操作周期內使發光二極體D1發光至少兩次,藉此達到多脈衝(Multi-Pulse)發光之功效。
In another embodiment, since the
在另一實施例中,由於不同階段時,顯示面板上的各列驅動電路100陸續有抽載電流,並提供第二電源供應電壓VDD2給各列的發光二極體D1,故第二電源供應電壓VDD2的電壓值穩定,以達到抗電壓衰退(Anti-IR Drop)的功效。
In another embodiment, each
由上述本案實施方式可知,應用本案具有下列優點。本案實施例所示之驅動電路100得以適用於高顯示品質與多脈衝(Multi-Pulse)發光的微發光二極體驅動電路。此外,本案之驅動電路100得以抗電壓衰退(Anti-IR Drop),因此,可以改善顯示器亮度顯示不均的問題。
It can be seen from the above embodiments of the present case that the application of the present case has the following advantages. The driving
雖然上文實施方式中揭露了本案的具體實施例,然其並非用以限定本案。請注意,前揭圖式中, 元件之形狀、尺寸及比例等僅為示意,係供本案所屬技術領域具有通常知識者瞭解本案之用,非用以限制本案。本案所屬技術領域中具有通常知識者,在不悖離本案之原理與精神的情形下,當可對其進行各種更動與修飾,因此本案之保護範圍當以附隨申請專利範圍所界定者為準。 Although the above embodiments disclose specific embodiments of the present case, they are not intended to limit the present case. Please note that in the front view, The shapes, sizes and proportions of the components are only for illustration, and are for the purpose of understanding the present case by those with ordinary knowledge in the technical field to which the present case belongs, and are not intended to limit the present case. Those with ordinary knowledge in the technical field to which this case belongs can make various changes and modifications without departing from the principles and spirit of this case. Therefore, the scope of protection of this case shall be defined by the scope of the patent application attached hereto. .
100:驅動電路 100: Drive circuit
110:至少一第一驅動單元 110: At least one first drive unit
120:至少一第二驅動單元 120: At least one second drive unit
121:記憶體 121: Memory
123:處理器 123: Processor
T1~T4:電晶體 T1~T4: Transistor
T5:驅動電晶體 T5: drive transistor
T6~T15:電晶體 T6~T15: Transistor
C1~C2:電容 C1~C2: Capacitor
D1:發光二極體 D1: Light Emitting Diode
DATA:資料電壓 DATA: data voltage
RS[n]:第一開關訊號[n] RS[n]: The first switch signal [n]
S1[n]:第一脈衝信號[n] S1[n]: The first pulse signal [n]
S2[n]:第二脈衝信號[n] S2[n]: The second pulse signal [n]
EM[n]:第二開關訊號[n] EM[n]: Second switch signal [n]
Sweep[n]:掃描信號[n] Sweep[n]: Sweep signal[n]
VDD1:第一電源供應電壓 VDD1: The first power supply voltage
VDD2:第二電源供應電壓 VDD2: The second power supply voltage
Vref:第一下拉電壓 Vref: The first pull-down voltage
VSS:第二下拉電壓 VSS: Second pull-down voltage
DATA1:第一資料電壓 DATA1: The first data voltage
DATA2:第二資料電壓 DATA2: The second data voltage
RS1[n]:第一開關訊號[n] RS1[n]: The first switch signal [n]
RS2[n]:第二開關訊號[n] RS2[n]: The second switch signal [n]
EM[n]:第三開關訊號[n] EM[n]: The third switch signal [n]
為讓本案之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下: 第1圖係依照本案一實施例繪示一種驅動電路的示意圖。 第2圖係依照本案一實施例繪示多種控制信號位準的波形示意圖。 第3圖至第6圖係依照本案一實施例繪示如第1圖中所示之驅動電路的操作示意圖。 第7圖係依照本案一實施例繪示一種驅動電路的示意圖。 第8圖係依照本案一實施例繪示多種控制信號位準的波形示意圖。 第9圖至第15圖係依照本案一實施例繪示如第7圖中所示之驅動電路的操作示意圖。 根據慣常的作業方式,圖中各種特徵與元件並未依比例繪製,其繪製方式是為了以最佳的方式呈現與本案相關的具體特徵與元件。此外,在不同圖式間,以相同或相似的元件符號來指稱相似的元件/部件。 In order to make the above and other objects, features, advantages and embodiments of the present case more clearly understood, the descriptions of the accompanying drawings are as follows: FIG. 1 is a schematic diagram illustrating a driving circuit according to an embodiment of the present invention. FIG. 2 is a schematic diagram illustrating waveforms of various control signal levels according to an embodiment of the present application. FIG. 3 to FIG. 6 are schematic diagrams illustrating the operation of the driving circuit shown in FIG. 1 according to an embodiment of the present application. FIG. 7 is a schematic diagram illustrating a driving circuit according to an embodiment of the present invention. FIG. 8 is a schematic diagram illustrating waveforms of various control signal levels according to an embodiment of the present invention. FIGS. 9 to 15 are schematic diagrams illustrating the operation of the driving circuit shown in FIG. 7 according to an embodiment of the present application. In accordance with common practice, the various features and elements in the figures are not drawn to scale, but are drawn in a manner that best represents the specific features and elements relevant to the present case. Furthermore, the same or similar reference numerals are used to refer to similar elements/components among the different drawings.
100:驅動電路 100: Drive circuit
110:至少一第一驅動單元 110: At least one first drive unit
120:至少一第二驅動單元 120: At least one second drive unit
T1~T4:電晶體 T1~T4: Transistor
T5:驅動電晶體 T5: drive transistor
T6~T15:電晶體 T6~T15: Transistor
C1~C2:電容 C1~C2: Capacitor
D1:發光二極體 D1: Light Emitting Diode
DATA:資料電壓 DATA: data voltage
RS[n]:第一開關訊號[n] RS[n]: The first switch signal [n]
S1[n]:第一脈衝信號[n] S1[n]: The first pulse signal [n]
S2[n]:第二脈衝信號[n] S2[n]: The second pulse signal [n]
EM[n]:第二開關訊號[n] EM[n]: Second switch signal [n]
Sweep[n]:掃描信號[n] Sweep[n]: Sweep signal[n]
VDD1:第一電源供應電壓 VDD1: The first power supply voltage
VDD2:第二電源供應電壓 VDD2: The second power supply voltage
Vref:第一下拉電壓 Vref: The first pull-down voltage
VSS:第二下拉電壓 VSS: Second pull-down voltage
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