TWI776661B - Crystal oscillator and method of making the same - Google Patents

Crystal oscillator and method of making the same Download PDF

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TWI776661B
TWI776661B TW110132308A TW110132308A TWI776661B TW I776661 B TWI776661 B TW I776661B TW 110132308 A TW110132308 A TW 110132308A TW 110132308 A TW110132308 A TW 110132308A TW I776661 B TWI776661 B TW I776661B
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electrode
electrode portion
oscillating
substrate
thinned
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TW110132308A
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TW202312523A (en
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洪瑞華
林逸倫
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國立陽明交通大學
安碁科技股份有限公司
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Priority to TW110132308A priority Critical patent/TWI776661B/en
Priority to JP2022044564A priority patent/JP2023035794A/en
Priority to CN202211008778.8A priority patent/CN115733456A/en
Priority to EP22191657.0A priority patent/EP4152610B1/en
Priority to US17/898,747 priority patent/US11942897B2/en
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Publication of TW202312523A publication Critical patent/TW202312523A/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0561—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0022—Structural aspects of oscillators characterised by the substrate, e.g. material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device

Abstract

一種晶體振盪器，包含一振盪基板、一中空框架、一第一電極，及一第二電極。該振盪基板包括彼此反向的第一表面、第二表面，及一振盪部。該中空框架設置於該第二表面並框圍出該振盪部，且該振盪部由一主振盪區，及一厚度小於該主振盪區的薄化區共同定義而成。該第一電極包括一位於第一表面的第一電極部，及一自該第一電極部延伸至第二表面的第一延伸電極部。該第二電極位於第二表面，包括一位於該振盪部的第二電極部，及一自該第二電極部延伸至與該第一延伸電極部位於同側的第二延伸電極部。此外，本案提供該晶體振盪器的製作方法。A crystal oscillator includes an oscillating substrate, a hollow frame, a first electrode, and a second electrode. The oscillating substrate includes a first surface, a second surface opposite to each other, and an oscillating portion. The hollow frame is disposed on the second surface and surrounds the oscillating portion, and the oscillating portion is jointly defined by a main oscillating region and a thinned region with a thickness smaller than that of the main oscillating region. The first electrode includes a first electrode portion located on the first surface, and a first extending electrode portion extending from the first electrode portion to the second surface. The second electrode is located on the second surface and includes a second electrode part located on the oscillation part, and a second extended electrode part extending from the second electrode part to the same side as the first extended electrode part. In addition, the present application provides a manufacturing method of the crystal oscillator.

Description

晶體振盪器及其製作方法Crystal oscillator and method of making the same

本發明是有關於一種振盪器及其製作方法，特別是指一種具有高振盪頻率的晶體振盪器及其製作方法。 The present invention relates to an oscillator and a manufacturing method thereof, in particular to a crystal oscillator with high oscillation frequency and a manufacturing method thereof.

現有的晶體振盪器的結構大致包含一由石英晶體所構成的振動板，及二分別形成於該振動板相對二表面並用以供對外電連接的電極。因應產業需求，晶體振盪器逐步往輕量化、薄型化的方向發展，透過減薄該振動板的厚度以產生更高的振盪頻率，而有助於應用在高頻通訊領域。例如，日本發明專利第JP2014154994A號公開案即揭示了一種振動元件，利用局部薄化的方式使該振動元件的基板具有一成平板狀的振動部，以及與該振動部一體化且厚度較厚的厚壁部，藉由控制該基板的整體厚度(即中央區域薄化，周緣較厚之態樣)以達成預設的振動頻率，並利用該厚壁部作為加強元件強度以及進行後續製程時用於夾持的部位，以避免振動元件因薄化後基板的強度不足而容易在製程中碎裂的問題。 The structure of the existing crystal oscillator generally includes a vibrating plate made of quartz crystal, and two electrodes respectively formed on two opposite surfaces of the vibrating plate and used for external electrical connection. In response to industrial needs, crystal oscillators are gradually developing towards light weight and thinning. By reducing the thickness of the vibrating plate to generate a higher oscillation frequency, it is helpful for application in the field of high frequency communication. For example, Japanese Invention Patent No. JP2014154994A discloses a vibrating element, in which the substrate of the vibrating element has a flat-plate-shaped vibrating portion by means of partial thinning, and a thicker vibrating portion integrated with the vibrating portion. The thick-walled portion can achieve a preset vibration frequency by controlling the overall thickness of the substrate (that is, the central area is thinned and the peripheral edge is thicker), and the thick-walled portion is used to strengthen the strength of the element and to be used in subsequent processes. At the clamping part, to avoid the problem that the vibration element is easily broken during the manufacturing process due to the insufficient strength of the thinned substrate.

然而，前述為了避免薄化後之基板碎裂而增設的厚壁部 卻也會增加元件整體的重量，而不利於產品的輕量化。 However, the aforementioned thick wall portion is added in order to avoid the breakage of the thinned substrate However, it will also increase the overall weight of the components, which is not conducive to the lightweight of the product.

因此，本發明的目的，即在提供一種輕量化之晶體振盪器的製作方法。 Therefore, the object of the present invention is to provide a method for manufacturing a light-weight crystal oscillator.

於是，本發明晶體振盪器的製作方法，包含一第一電極部製作步驟、一貼合步驟、一第一次薄化步驟、一第二電極製作製作步驟、一延伸電極製作步驟、一框架形成步驟，及一第二次薄化步驟。 Therefore, the manufacturing method of the crystal oscillator of the present invention includes a first electrode part manufacturing step, a laminating step, a first thinning step, a second electrode manufacturing step, an extension electrode manufacturing step, and a frame forming step step, and a second thinning step.

該第一電極部製作步驟是於一壓電基板的其中一表面形成一第一電極部，而得到一第一半成品。 The first electrode part fabrication step is to form a first electrode part on one surface of a piezoelectric substrate to obtain a first semi-finished product.

該貼合步驟是將該第一半成品以該第一電極部朝向一暫時基板的方向貼合於該暫時基板。 In the attaching step, the first semi-finished product is attached to the temporary substrate with the first electrode portion facing the temporary substrate.

該第一次薄化步驟是將該第一半成品的壓電基板進行全面薄化，而得到一具有一第一厚度的薄化壓電基板。 The first thinning step is to completely thin the piezoelectric substrate of the first semi-finished product to obtain a thinned piezoelectric substrate having a first thickness.

該第二電極製作步驟是於該薄化壓電基板反向該暫時基板的表面形成一第二電極，該第二電極具有一對應於該第一電極部且具有至少一孔洞的第二電極部，及一自該第二電極部延伸至該薄化壓電基板的周緣的第二延伸電極部，且令該第二電極部的正投影範圍與該第一電極部至少部分重合。 The second electrode fabrication step is to form a second electrode on the surface of the thinned piezoelectric substrate opposite to the temporary substrate, the second electrode has a second electrode portion corresponding to the first electrode portion and having at least one hole , and a second extending electrode portion extending from the second electrode portion to the periphery of the thinned piezoelectric substrate, and the orthographic projection range of the second electrode portion is at least partially coincident with the first electrode portion.

該延伸電極製作步驟是形成一自該第一電極部延伸並沿著該薄化壓電基板的側周面延伸至該薄化壓電基板形成有該第二電極的表面的第一延伸電極部。 The extended electrode fabrication step is to form a first extended electrode portion extending from the first electrode portion and extending along the side peripheral surface of the thinned piezoelectric substrate to the surface of the thinned piezoelectric substrate on which the second electrode is formed .

該框架形成步驟是在該薄化壓電基板反向該第一電極的表面上形成一具有預定厚度，且框圍該第二電極部並壓設於該第二延伸電極部上的中空框架。 In the frame forming step, a hollow frame with a predetermined thickness is formed on the surface of the thinned piezoelectric substrate opposite to the first electrode, which surrounds the second electrode portion and is pressed on the second extending electrode portion.

該第二次薄化步驟是以該第二電極為遮罩，利用蝕刻的方式將該薄化壓電基板對位於該至少一孔洞的位置進行薄化，以形成一第二半成品。 In the second thinning step, the second electrode is used as a mask, and the thinned piezoelectric substrate is thinned at the position of the at least one hole by etching to form a second semi-finished product.

又，本發明的另一目的，即在提供一種輕量化的晶體振盪器。 Another object of the present invention is to provide a light-weight crystal oscillator.

於是，本發明晶體振盪器，包含一振盪基板、一中空框架、一第一電極，及一第二電極。 Therefore, the crystal oscillator of the present invention includes an oscillating substrate, a hollow frame, a first electrode, and a second electrode.

該振盪基板包括彼此反向的一第一表面、一第二表面，及一振盪部，該振盪部由一主振盪區，及一厚度小於該主振盪區的厚度的薄化區共同定義而成。 The oscillating substrate includes a first surface, a second surface and an oscillating portion which are opposite to each other. The oscillating portion is jointly defined by a main oscillating region and a thinned region with a thickness smaller than that of the main oscillating region. .

該中空框架設置於該振盪基板的第二表面，並界定出該振盪部。 The hollow frame is disposed on the second surface of the oscillating substrate and defines the oscillating portion.

該第一電極包括一形成於該振盪基板的該第一表面的第一電極部，及一自該第一電極部延伸並沿著該振盪基板的側周面延 伸至該第二表面的第一延伸電極部。 The first electrode includes a first electrode portion formed on the first surface of the oscillating substrate, and a first electrode portion extending from the first electrode portion and extending along the side peripheral surface of the oscillating substrate extending to the first extension electrode portion of the second surface.

該第二電極位於該振盪基板的該第二表面，包括一與該第一電極部的正投影範圍至少部分疊合並位於該振盪部的第二電極部，及一自該第二電極部延伸至與該第一延伸電極部位於同側的第二延伸電極部，且該第二電極部具有對應形成於該薄化區的至少一孔洞。 The second electrode is located on the second surface of the oscillating substrate, and includes a second electrode portion that at least partially overlaps with the orthographic projection range of the first electrode portion and is located on the oscillating portion, and a second electrode portion extending from the second electrode portion to A second extension electrode portion located on the same side as the first extension electrode portion, and the second electrode portion has at least one hole corresponding to the thinned region.

本發明的功效在於：利用該第二電極作為遮罩，而可以蝕刻方式對該振盪基板的振盪部未形成電極的區域進行減薄，使該振盪部整體具有兩種不同的厚度，且更加薄化，而可使該晶體振盪器具有符合預期的振盪頻率的同時，還得以進一步減輕該晶體振盪器整體的重量。 The effect of the present invention lies in: using the second electrode as a mask, the area of the oscillating part of the oscillating substrate without electrodes can be thinned by etching, so that the whole oscillating part has two different thicknesses and is thinner Therefore, the crystal oscillator can have an expected oscillation frequency, and at the same time, the overall weight of the crystal oscillator can be further reduced.

200:晶體振盪器 200: crystal oscillator

300:第一半成品 300: The first semi-finished product

400:第二半成品 400: Second semi-finished product

2:振盪基板 2: Oscillation substrate

21:第一表面 21: First surface

22:第二表面 22: Second surface

23:振盪部 23: Oscillation Department

231:主振盪區 231: Main oscillator area

232:薄化區 232: Thinning area

2321:穿孔 2321: Perforation

24:周緣區 24: Peripheral area

3:中空框架 3: Hollow frame

4:第一電極 4: The first electrode

41:第一電極部 41: The first electrode part

42:第一延伸電極部 42: The first extension electrode part

5:第二電極 5: The second electrode

51:第二電極部 51: Second electrode part

511:孔洞 511: Hole

52:第二延伸電極部 52: Second extension electrode part

60:壓電基板 60: Piezoelectric substrate

6:薄化壓電基板 6: Thin piezoelectric substrate

7:暫時基板 7: Temporary substrate

81:第一電極部製作成步驟 81: Steps for making the first electrode part

82:貼合步驟 82: Fitting step

83:第一次薄化步驟 83: First Thinning Step

84:第二電極製作驟 84: Second electrode fabrication step

85:延伸電極製作驟 85: Extended electrode fabrication steps

86:框架形成步驟 86: Frame forming step

87:第二次薄化步驟 87: Second Thinning Step

88:移除步驟 88: Removal step

T1:第一厚度 T1: first thickness

T2:第二厚度 T2: Second thickness

本發明的其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是一俯視示意圖，說明本發明晶體振盪器的一實施例；圖2是一側視剖視圖，輔助說明沿圖1的II-II割面線的剖視結構；圖3是一側視剖視圖，輔助說明沿圖1的III-III割面線的剖視結構； 圖4是一流程圖，說明該晶體振盪器的製作方法；圖5是一側視示意圖，輔助圖4說明該實施例的製作方法；及圖6是一側視示意圖，延續圖5說明該實施例的製作方法。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a schematic top view illustrating an embodiment of the crystal oscillator of the present invention; FIG. 2 is a side cross-sectional view, Auxiliary description is along the sectional structure of the II-II secant line of Fig. 1; Fig. 3 is a side view sectional view, auxiliary description is along the sectional structure of the III-III secant line of Fig. 1; FIG. 4 is a flow chart illustrating a method of manufacturing the crystal oscillator; FIG. 5 is a schematic side view illustrating the manufacturing method of the embodiment in aid of FIG. 4 ; and FIG. 6 is a schematic side view illustrating the implementation following FIG. 5 . Example of how to make it.

在本發明被詳細描述前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。且有關本發明之相關技術內容、特點與功效，在以下配合參考圖式之實施例的詳細說明中，將可清楚的呈現。此外，要說明的是，本發明圖式僅為表示元件間的結構及/或位置相對關係，與各元件的實際尺寸並不相關。 Before the present invention is described in detail, it should be noted that in the following description, similar elements are designated by the same reference numerals. And the related technical content, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the drawings. In addition, it should be noted that the drawings of the present invention only show the relative structure and/or positional relationship among the elements, and are not related to the actual size of each element.

參閱圖1、圖2與圖3，本發明晶體振盪器200的一實施例，包含包含一振盪基板2、一中空框架3、一第一電極4，及一第二電極5。 Referring to FIGS. 1 , 2 and 3 , an embodiment of a crystal oscillator 200 of the present invention includes an oscillating substrate 2 , a hollow frame 3 , a first electrode 4 , and a second electrode 5 .

該振盪基板2包括彼此反向的一第一表面21、一第二表面22，及一振盪部23，該振盪部23是由設置於該第二表面22的中空框架3框圍界定形成(見圖1)，且由一具有一第一厚度T1的主振盪區231，及一具有一第二厚度T2的的薄化區232共同定義而成，且該第二厚度T2小於該第一厚度T1。其中，該振盪基板2是由具有諧振特性(resonance)的壓電材料構成，選自石英晶體。在本實施例中，該主振盪區231的第一厚度T1不大於50μm，該薄化區232的第 二厚度T2不大於10μm。 The oscillating substrate 2 includes a first surface 21 , a second surface 22 opposite to each other, and an oscillating portion 23 , and the oscillating portion 23 is framed and formed by a hollow frame 3 disposed on the second surface 22 (see 1), and is jointly defined by a main oscillation region 231 with a first thickness T1 and a thinned region 232 with a second thickness T2, and the second thickness T2 is smaller than the first thickness T1 . The oscillating substrate 2 is made of a piezoelectric material having resonance properties, and is selected from quartz crystals. In this embodiment, the first thickness T1 of the main oscillation region 231 is not greater than 50 μm, and the first thickness T1 of the thinned region 232 is not greater than 50 μm. The thickness T2 is not greater than 10 μm.

在一些實施例中，該薄化區232的至少部分形成貫穿該振盪基板2的穿孔2321(見圖2)，而可減低該晶體振盪器200的整體重量。較佳地，該薄化區232的該第二厚度T2為0，也就是說，該薄化區232是完全由貫穿該振盪基板2的穿孔2321構成。 In some embodiments, at least a portion of the thinned region 232 forms a through hole 2321 (see FIG. 2 ) through the oscillating substrate 2 , thereby reducing the overall weight of the crystal oscillator 200 . Preferably, the second thickness T2 of the thinned region 232 is 0, that is, the thinned region 232 is completely formed by the through holes 2321 penetrating the oscillating substrate 2 .

該中空框架3設置於該振盪基板2的第二表面22上，並界定出該振盪部23，用以增加厚度以提供夾持位置，而有助於配置於電子構件中。該中空框架3可依需求選自絕緣材料或是光阻材料，且寬度、形狀及其設置位置可依需求或設計而有所不同，並無具體限制。 The hollow frame 3 is disposed on the second surface 22 of the oscillating substrate 2 and defines the oscillating portion 23 for increasing the thickness to provide a clamping position, which is helpful for disposing in electronic components. The hollow frame 3 can be selected from insulating materials or photoresist materials according to requirements, and the width, shape and arrangement position thereof can be different according to requirements or designs, and there is no specific limitation.

該第一電極4包括一形成於該振盪基板2的該第一表面21的第一電極部41，及一自該第一電極部41延伸並沿著該振盪基板2的側周面延伸至該第二表面22的第一延伸電極部42。在本實施例中，該第一電極部41對應形成於該振盪部23的投影範圍內，該第一延伸電極部42位於該中空框架3的外圍。 The first electrode 4 includes a first electrode portion 41 formed on the first surface 21 of the oscillating substrate 2 , and a first electrode portion 41 extending from the first electrode portion 41 and extending along the side peripheral surface of the oscillating substrate 2 to the The first extended electrode portion 42 of the second surface 22 . In this embodiment, the first electrode portion 41 is correspondingly formed within the projection range of the oscillating portion 23 , and the first extending electrode portion 42 is located at the periphery of the hollow frame 3 .

該第二電極5位於該振盪基板2的該第二表面22，包括一位於該振盪部23的第二電極部51，及一自該第二電極部51延伸至與該第一延伸電極部42位於同側的第二延伸電極部52。該第二電極部51與該第一電極部41的正投影範圍至少部分疊合，而位於該振盪部23範圍內，且該第二電極部51具有多個孔洞511，分別對應 形成於該薄化區232。且該等孔洞511的分布位置、數量等可視需求而有不同，也可僅在該第二電極部51上形成單一個孔洞511，並無具體限制。該第二延伸電極部52自該第二電極部51延伸並通過該中空框架3與該第二表面22之間，以延伸至該中空框架3的外圍，並與該第一延伸電極42部位於同側。 The second electrode 5 is located on the second surface 22 of the oscillating substrate 2 , and includes a second electrode portion 51 located on the oscillating portion 23 , and a second electrode portion 51 extending from the second electrode portion 51 to the first extending electrode portion 42 The second extended electrode portion 52 on the same side. The second electrode portion 51 and the orthographic projection range of the first electrode portion 41 at least partially overlap, and are located within the range of the oscillating portion 23 , and the second electrode portion 51 has a plurality of holes 511 corresponding to formed in the thinned region 232 . Moreover, the distribution positions and numbers of the holes 511 may vary according to requirements, and only a single hole 511 may be formed on the second electrode portion 51 , which is not particularly limited. The second extending electrode portion 52 extends from the second electrode portion 51 and passes between the hollow frame 3 and the second surface 22 to extend to the periphery of the hollow frame 3 and is located with the first extending electrode portion 42 ipsilateral.

該第一電極4及該第二電極5是選自金、銀，或鋁等導電材料構成，且彼此可為相同或不同。 The first electrode 4 and the second electrode 5 are made of conductive materials selected from gold, silver, or aluminum, and can be the same or different from each other.

在本實施例中，該中空框架3的至少部分與該振盪基板2的邊緣成一間距間隔，而形成兩個彼此間隔並位於同一側的周緣區24，且令該第一延伸電極部42位於其中一周緣區24，該第二延伸電極部52自該第二電極部51延伸並通過該中空框架3與該第二表面22之間以延伸至其中另一周緣區24，而與該第一延伸電極部42位於同側。此外，設置有該第一延伸電極部42與該第二延伸電極部52之周緣區24的厚度等同於該主振盪區231的第一厚度T1，讓該第一延伸電極部42與該第二延伸電極部52位於接近等高的位置且位於該振盪基板2的同側，而有利於對外接合於其它電子構件。 In this embodiment, at least part of the hollow frame 3 is spaced from the edge of the oscillating substrate 2 to form two peripheral regions 24 that are spaced apart from each other and located on the same side, and the first extending electrode portion 42 is located therein. A peripheral region 24, the second extending electrode portion 52 extends from the second electrode portion 51 and passes between the hollow frame 3 and the second surface 22 to extend to the other peripheral region 24, and the first extending The electrode portion 42 is located on the same side. In addition, the thickness of the peripheral region 24 where the first extension electrode portion 42 and the second extension electrode portion 52 are disposed is equal to the first thickness T1 of the main oscillation region 231 , so that the first extension electrode portion 42 and the second extension electrode portion 52 have a thickness equal to the first thickness T1 of the main oscillation region 231 . The extension electrode portion 52 is located at a position close to the same height and on the same side of the oscillating substrate 2 , so as to facilitate external bonding to other electronic components.

本案晶體振盪器200藉由將該主振盪區231以外的該薄化區232的第二厚度T2控制在極薄(或是形成至少部分穿孔2321或完全鏤空)，而可進一步減輕該晶體振盪器200的整體重量。 By controlling the second thickness T2 of the thinned region 232 other than the main oscillation region 231 to be extremely thin (or forming at least a part of the through hole 2321 or completely hollowing out), the crystal oscillator 200 of the present invention can further reduce the weight of the crystal oscillator. 200 overall weight.

參閱圖4、圖5及圖6，前述該晶體振盪器200是經由下述 的製作方法所製得。且該製作方法包含一第一電極部製作步驟81、一貼合步驟82、一第一次薄化步驟83、一第二電極製作製作步驟84、一延伸電極製作步驟85、一框架形成步驟86、一第二次薄化步驟87，及一移除步驟88。 Referring to FIG. 4 , FIG. 5 and FIG. 6 , the aforementioned crystal oscillator 200 is obtained through the following produced by the production method. And the fabrication method includes a first electrode part fabrication step 81 , a lamination step 82 , a first thinning step 83 , a second electrode fabrication step 84 , an extension electrode fabrication step 85 , and a frame forming step 86 . , a second thinning step 87 , and a removal step 88 .

該第一電極部製作步驟81是於一壓電基板60的其中一表面形成該第一電極部41，而得到一第一半成品300。在本實施例中，壓電基板60選自石英晶體，且該第一電極部製作步驟81是以導電材料透過沉積或印刷方式形成該第一電極部41。 The first electrode portion fabrication step 81 is to form the first electrode portion 41 on one surface of a piezoelectric substrate 60 to obtain a first semi-finished product 300 . In this embodiment, the piezoelectric substrate 60 is selected from quartz crystals, and the first electrode portion fabrication step 81 is to form the first electrode portion 41 by deposition or printing of conductive materials.

該貼合步驟82是將該第一半成品300以該第一電極部41朝向一暫時基板7的方向貼合於該暫時基板7，而可在後續的薄化製程及電極製作過程中提供支撐，以避免該振盪基板2在製程中破碎。 The attaching step 82 is to attach the first semi-finished product 300 to the temporary substrate 7 with the first electrode portion 41 facing the temporary substrate 7, so as to provide support in the subsequent thinning process and electrode fabrication process. In order to prevent the oscillating substrate 2 from being broken during the manufacturing process.

該第一次薄化步驟83是將該壓電基板60進行全面薄化，而得到一具有該第一厚度T1的薄化壓電基板6，且該第一厚度T1小於該壓電基板60的厚度。在本實施例中，是以研磨或化學蝕刻的方式將該壓電基板60進行薄化而形成該薄化壓電基板6。 The first thinning step 83 is to perform overall thinning of the piezoelectric substrate 60 to obtain a thinned piezoelectric substrate 6 having the first thickness T1 , and the first thickness T1 is smaller than the thickness of the piezoelectric substrate 60 . thickness. In this embodiment, the piezoelectric substrate 60 is thinned by grinding or chemical etching to form the thinned piezoelectric substrate 6 .

該第二電極製作步驟84是於該薄化壓電基板6反向該暫時基板7的表面形成該第二電極5。配合參閱圖1，且該第二電極5具有對應於該第一電極部41且令正投影範圍與該第一電極部41至少部分重合的該第二電極部51，及自該第二電極部51延伸至該薄化壓電基板6周緣的第二延伸電極部52，且該第二電極部51形成有 多個如圖1所示的孔洞511，令該薄化壓電基板6的表面自該等孔洞511露出。在本實施例中，該第二電極製作步驟84是以導電材料透過沉積或印刷方式形成該第二電極5。 The second electrode fabrication step 84 is to form the second electrode 5 on the surface of the thinned piezoelectric substrate 6 opposite to the temporary substrate 7 . Referring to FIG. 1 , the second electrode 5 has the second electrode portion 51 corresponding to the first electrode portion 41 and whose orthographic projection range at least partially overlaps the first electrode portion 41 , and the second electrode portion 51 is formed from the second electrode portion 41 . 51 extends to the second extended electrode portion 52 of the periphery of the thinned piezoelectric substrate 6, and the second electrode portion 51 is formed with A plurality of holes 511 as shown in FIG. 1 expose the surface of the thinned piezoelectric substrate 6 from the holes 511 . In this embodiment, the second electrode fabrication step 84 is to form the second electrode 5 by deposition or printing of conductive material.

該延伸電極製作步驟85是形成一自該第一電極部41延伸並沿著該薄化壓電基板6的側周面延伸至該薄化壓電基板6形成有該第二電極5的表面的第一延伸電極部42。在本實施例中，該延伸電極製作步驟85是以導電材料透過印刷或鍍膜方式形成該第一延伸電極部42。 The extended electrode fabrication step 85 is to form an electrode extending from the first electrode portion 41 and extending along the side peripheral surface of the thinned piezoelectric substrate 6 to the surface of the thinned piezoelectric substrate 6 on which the second electrode 5 is formed The first extension electrode portion 42 . In this embodiment, the extended electrode fabrication step 85 is to form the first extended electrode portion 42 by printing or coating through conductive material.

在一些實施例中，也可視製程需求調整該第二電極製作步驟84與該延伸電極製作步驟85的實施順序，即，也可先實施該延伸電極製作步驟85再進行該第二電極製作步驟84。 In some embodiments, the execution sequence of the second electrode fabrication step 84 and the extension electrode fabrication step 85 may also be adjusted according to process requirements, that is, the extension electrode fabrication step 85 may be performed first and then the second electrode fabrication step 84 may be performed .

此外，在一些實施例中，於該延伸電極製作步驟85時，該第一延伸電極部42也可先與該第二電極延伸部52同時製作於該第二表面22，之後，再利用銀膠連接該第一電極部41及該第一延伸電極部42，以完成該第一電極4的製作。 In addition, in some embodiments, in the extending electrode fabrication step 85 , the first extending electrode portion 42 and the second electrode extending portion 52 can also be fabricated on the second surface 22 at the same time, and then using silver paste The first electrode portion 41 and the first extended electrode portion 42 are connected to complete the fabrication of the first electrode 4 .

該框架形成步驟86是在該薄化壓電基板6反向該第一電極部41的表面上形成一具有預定厚度且框圍該第二電極部51的中空框架3，且該中空框架3壓設於該第二延伸電極部52上。要說明的是，該框架形成步驟86依據該中空框架3的構成材料不同，而以不同方式執行。例如，可以光阻材料透過微影方式形成該中空框架 3。或是，也可以利用黏膠將一由絕緣材料構成且事先加工完成，具有預定形狀及厚度的中空框材貼合在該薄化壓電基板6的表面上，以形成該中空框架3。 The frame forming step 86 is to form a hollow frame 3 having a predetermined thickness on the surface of the thinned piezoelectric substrate 6 opposite to the first electrode portion 41 and enclosing the second electrode portion 51 , and the hollow frame 3 presses is disposed on the second extending electrode portion 52 . It should be noted that, the frame forming step 86 is performed in different ways depending on the constituent materials of the hollow frame 3 . For example, the hollow frame can be formed by photolithography through photoresist 3. Alternatively, a hollow frame material made of insulating material and processed in advance and having a predetermined shape and thickness can also be pasted on the surface of the thinned piezoelectric substrate 6 by adhesive to form the hollow frame 3 .

該第二次薄化步驟87是以該第二電極5為遮罩，利用蝕刻的方式將該薄化壓電基板6上對應於該等孔洞511的範圍進行薄化，以形成一第二半成品400。並將經過二次薄化的區域定義為該薄化區232。該薄化壓電基板6於對應形成該第二電極5的區域(即該主振盪區231)厚度維持在該第一厚度T1，該薄化壓電基板6未形成該第二電極5的區域則為薄化區232，且該薄化區232的厚度減薄至小於該第一厚度T1的該第二厚度T2。 The second thinning step 87 uses the second electrode 5 as a mask to thin the area corresponding to the holes 511 on the thinned piezoelectric substrate 6 by etching to form a second semi-finished product 400. The area that has undergone secondary thinning is defined as the thinned area 232 . The thickness of the thinned piezoelectric substrate 6 is maintained at the first thickness T1 in the region corresponding to the second electrode 5 (ie, the main oscillation region 231 ), and the region of the thinned piezoelectric substrate 6 where the second electrode 5 is not formed Then it is the thinned region 232, and the thickness of the thinned region 232 is reduced to the second thickness T2 smaller than the first thickness T1.

在一些實施例，該第二次薄化步87驟還可依需求進一步將該薄化壓電基板6且位於該中空框架3框圍內未形成該第二電極5的區域的至少部分完全蝕刻移除，而在對應於該薄化區232的範圍內，也就是對位於其中至少部分孔洞511的位置薄化至形成該至少一貫穿該薄化壓電基板6的穿孔2321。較佳地，該薄化區232的範圍被完全蝕刻移除，令該薄化區232的第二厚度T2為0，而為完全鏤空。 In some embodiments, the second thinning step 87 may further etch at least part of the thinned piezoelectric substrate 6 and the area within the frame of the hollow frame 3 where the second electrode 5 is not formed as required. Removing, and in the range corresponding to the thinning region 232 , that is, thinning at least part of the hole 511 to form the at least one through hole 2321 penetrating the thinned piezoelectric substrate 6 . Preferably, the area of the thinned region 232 is completely removed by etching, so that the second thickness T2 of the thinned region 232 is 0, which is completely hollow.

該移除步驟88是將該暫時基板7自該第二半成品400移除，而得到該晶體振盪器200。其中，該移除步驟88會依據在該貼合步驟82中，該暫時基板7貼合於該第一半成品300的方式來選擇 相對應的移除方法。例如：該暫時基板7是以一光解黏膠或熱解黏膠貼合於該第一半成品300上，該移除步驟88則會以照光或加熱方式來分解黏膠以移除該暫時基板7。 The removing step 88 is to remove the temporary substrate 7 from the second semi-finished product 400 to obtain the crystal oscillator 200 . The removing step 88 is selected according to the manner in which the temporary substrate 7 is attached to the first semi-finished product 300 in the attaching step 82 . The corresponding removal method. For example, the temporary substrate 7 is attached to the first semi-finished product 300 by a photolytic adhesive or a pyrolytic adhesive, and the removing step 88 is to decompose the adhesive by light or heating to remove the temporary substrate 7.

詳細的說，本案的製作方法是令該第一電極部41與該第二電極5分別先形成於平坦表面的該壓電基板60與該薄化壓電基板6上，因此於電極製作的過程中，無須克服基板表面的高低落差，且該薄化壓電基板6的厚度(第一厚度T1)極薄，相較於習知的晶體振盪器，也大幅縮短了該第一延伸電極部42的延伸高度，而使該第一電極4與該第二電極5的製作更為簡化。之後，再利用該第一次薄化步驟83、該第二次薄化步驟87兩次的薄化製程來調整該晶體振盪器200之振盪基板2的整體厚度。令由該第一電極部41及該第二電極部51所夾設的該主振盪區231維持在該該第一厚度T1，使該晶體振盪器200的振盪頻率符合預期。同時，在有該暫時基板7支撐的情況下，該第二次薄化步驟87中是直接利用形成於該第二表面22的第二電極5作為遮罩，而將該主振盪區231以外的區域(即自該等孔洞511所露出的表面)進行減薄，以進一步移除部分晶體結構，而在該晶體振盪器200具有特定振盪頻率的情況下，進一步減輕元件重量。 In detail, the fabrication method of the present application is to make the first electrode portion 41 and the second electrode 5 respectively firstly form on the flat surface piezoelectric substrate 60 and the thinned piezoelectric substrate 6, so the electrode fabrication process There is no need to overcome the height difference of the substrate surface, and the thickness of the thinned piezoelectric substrate 6 (the first thickness T1 ) is extremely thin. Compared with the conventional crystal oscillator, the first extension electrode portion 42 is also greatly shortened. Therefore, the fabrication of the first electrode 4 and the second electrode 5 is simplified. After that, the overall thickness of the oscillating substrate 2 of the crystal oscillator 200 is adjusted by two thinning processes of the first thinning step 83 and the second thinning step 87 . The main oscillation region 231 sandwiched by the first electrode portion 41 and the second electrode portion 51 is maintained at the first thickness T1 , so that the oscillation frequency of the crystal oscillator 200 is as expected. Meanwhile, in the case of the temporary substrate 7 being supported, in the second thinning step 87, the second electrode 5 formed on the second surface 22 is directly used as a mask, and the area outside the main oscillation area 231 is The area (ie, the surface exposed from the holes 511 ) is thinned to further remove part of the crystal structure, and further reduce the weight of the component if the crystal oscillator 200 has a specific oscillation frequency.

綜上所述，本案利用該第二次薄化步驟87直接利用電極作為蝕刻遮罩，並以蝕刻方式來移除部分的晶體結構(即該薄化壓 電基板6的部分結構)來進行減薄，而可使進一步減少該振盪基板2的重量，並確保該晶體振盪器200的振盪頻率符合預期，故確實能達成本發明的目的。 To sum up, in this case, the second thinning step 87 is used to directly use the electrode as an etching mask, and to remove part of the crystal structure (that is, the thinning pressure) by etching. The weight of the oscillating substrate 2 can be further reduced, and the oscillation frequency of the crystal oscillator 200 can be ensured to meet expectations, so the object of the present invention can be achieved.

惟以上所述者，僅為本發明的實施例而已，當不能以此限定本發明實施的範圍，凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾，皆仍屬本發明專利涵蓋的範圍內。 However, the above are only examples of the present invention, and should not limit the scope of implementation of the present invention. Any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the contents of the patent specification are still included in the scope of the present invention. within the scope of the invention patent.

200:晶體振盪器 200: crystal oscillator

2:振盪基板 2: Oscillation substrate

21:第一表面 21: First surface

22:第二表面 22: Second surface

23:振盪部 23: Oscillation Department

231:主振盪區 231: Main oscillator area

232:薄化區 232: Thinning area

2321:穿孔 2321: Perforation

24:周緣區 24: Peripheral area

3:中空框架 3: Hollow frame

4:第一電極 4: The first electrode

41:第一電極部 41: The first electrode part

42:第一延伸電極部 42: The first extension electrode part

51:第二電極部 51: Second electrode part

511:孔洞 511: Hole

T1:第一厚度 T1: first thickness

T2:第二厚度 T2: Second thickness

Claims (7)

一種晶體振盪器的製作方法，包含： 一第一電極部製作步驟，於一壓電基板的其中一表面形成一第一電極部，而得到一第一半成品； 一貼合步驟，將該第一半成品以該第一電極部朝向一暫時基板的方向貼合於該暫時基板； 一第一次薄化步驟，將該第一半成品的壓電基板進行全面薄化，而得到一具有一第一厚度的薄化壓電基板； 一第二電極製作步驟，於該薄化壓電基板反向該暫時基板的表面形成一第二電極，該第二電極具有一對應於該第一電極部且具有至少一孔洞的第二電極部，及一自該第二電極部延伸至該薄化壓電基板的周緣的第二延伸電極部，且令該第二電極部的正投影範圍與該第一電極部至少部分重合； 一延伸電極製作步驟，形成一自該第一電極部延伸並沿著該薄化壓電基板的側周面延伸至該薄化壓電基板形成有該第二電極的表面的第一延伸電極部； 一框架形成步驟，在該薄化壓電基板反向該第一電極的表面上形成一具有預定厚度，且框圍該第二電極部並壓設於該第二延伸電極部上的中空框架；及 一第二次薄化步驟，以該第二電極為遮罩，利用蝕刻的方式將該薄化壓電基板對位於該至少一孔洞的位置進行薄化，以形成一第二半成品。 A method for manufacturing a crystal oscillator, comprising: a first electrode part manufacturing step, forming a first electrode part on one surface of a piezoelectric substrate to obtain a first semi-finished product; a laminating step, laminating the first semi-finished product to the temporary substrate with the direction of the first electrode portion facing the temporary substrate; a first thinning step, wherein the piezoelectric substrate of the first semi-finished product is fully thinned to obtain a thinned piezoelectric substrate with a first thickness; In a second electrode fabrication step, a second electrode is formed on the surface of the thinned piezoelectric substrate opposite to the temporary substrate, the second electrode has a second electrode portion corresponding to the first electrode portion and having at least one hole , and a second extending electrode portion extending from the second electrode portion to the periphery of the thinned piezoelectric substrate, and making the orthographic projection range of the second electrode portion at least partially coincide with the first electrode portion; an extension electrode fabrication step, forming a first extension electrode portion extending from the first electrode portion and extending along the side peripheral surface of the thinned piezoelectric substrate to the surface of the thinned piezoelectric substrate on which the second electrode is formed ; a frame forming step, forming a hollow frame with a predetermined thickness on the surface of the thinned piezoelectric substrate opposite to the first electrode, and enclosing the second electrode portion and pressing on the second extending electrode portion; and In a second thinning step, using the second electrode as a mask, the thinned piezoelectric substrate is thinned at the position of the at least one hole by etching to form a second semi-finished product. 如請求項1所述的晶體振盪器的製作方法，其中，該第二次薄化步驟是將該薄化壓電基板對位於該至少一孔洞的位置完全蝕刻移除，以形成該第二半成品。The method for manufacturing a crystal oscillator as claimed in claim 1, wherein the second thinning step is to completely etch and remove the thinned piezoelectric substrate from the position located at the at least one hole to form the second semi-finished product . 如請求項1所述的晶體振盪器的製作方法，還包含一實施於該第二次薄化步驟後的移除步驟，將該暫時基板自該第二半成品移除。The method for fabricating a crystal oscillator according to claim 1, further comprising a removing step performed after the second thinning step, wherein the temporary substrate is removed from the second semi-finished product. 一種晶體振盪器，包含： 一振盪基板，包括彼此反向的一第一表面、一第二表面，及一振盪部，該振盪部由一主振盪區，及一厚度小於該主振盪區的厚度的薄化區共同定義而成； 一中空框架，設置於該振盪基板的第二表面，並界定出該振盪部； 一第一電極，包括一形成於該振盪基板的該第一表面的第一電極部，及一自該第一電極部延伸並沿著該振盪基板的側周面延伸至該第二表面的第一延伸電極部；及 一第二電極，位於該振盪基板的該第二表面，包括一與該第一電極部的正投影範圍至少部分疊合並位於該振盪部的第二電極部，及一自該第二電極部延伸至與該第一延伸電極部位於同側的第二延伸電極部，且該第二電極部具有對應形成於該薄化區的至少一孔洞。 A crystal oscillator containing: An oscillating substrate includes a first surface, a second surface and an oscillating portion opposite to each other. The oscillating portion is jointly defined by a main oscillating region and a thinned region with a thickness smaller than that of the main oscillating region. to make; a hollow frame disposed on the second surface of the oscillating substrate and defining the oscillating portion; a first electrode, comprising a first electrode portion formed on the first surface of the oscillating substrate, and a first electrode portion extending from the first electrode portion and extending along the side peripheral surface of the oscillating substrate to the second surface an extension electrode portion; and a second electrode, located on the second surface of the oscillating substrate, including a second electrode part that at least partially overlaps with the orthographic projection range of the first electrode part and is located on the oscillating part, and a second electrode part extending from the second electrode part to a second extended electrode portion located on the same side as the first extended electrode portion, and the second electrode portion has at least one hole corresponding to the thinned region. 如請求項4所述的晶體振盪器，其中，該中空框架的至少部分與該振盪基板的邊緣成一間距間隔而形成兩個彼此間隔並位於同一側的周緣區，該第一延伸電極部位於其中一周緣區，該第二延伸電極部自該第二電極部延伸並通過該中空框架與該第二表面之間而延伸至其中另一周緣區，並與該第一延伸電極部位於同側。The crystal oscillator of claim 4, wherein at least a portion of the hollow frame is spaced apart from the edge of the oscillating substrate to form two peripheral regions that are spaced apart from each other and located on the same side, and the first extension electrode portion is located therein In a peripheral area, the second extending electrode portion extends from the second electrode portion and extends between the hollow frame and the second surface to another peripheral area, and is located on the same side as the first extending electrode portion. 如請求項5所述的晶體振盪器，其中，該振盪基板位於該中空框架外圍的厚度與該主振盪區相同。The crystal oscillator of claim 5, wherein the thickness of the oscillating substrate at the periphery of the hollow frame is the same as that of the main oscillating region. 如請求項4所述的晶體振盪器，其中，該薄化區的至少部分為貫穿該振盪部的穿孔。The crystal oscillator of claim 4, wherein at least part of the thinned region is a through hole penetrating the oscillation portion.
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