TWI771982B - A double-edge triggered flip-flop circuit and a shift register thereof - Google Patents

A double-edge triggered flip-flop circuit and a shift register thereof Download PDF

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TWI771982B
TWI771982B TW110113248A TW110113248A TWI771982B TW I771982 B TWI771982 B TW I771982B TW 110113248 A TW110113248 A TW 110113248A TW 110113248 A TW110113248 A TW 110113248A TW I771982 B TWI771982 B TW I771982B
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transistor
gate
flip
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flop circuit
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TW202240593A (en
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王朝欽
藍那 基
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國立中山大學
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Abstract

A double-edge triggered flip-flop circuit and a shift register thereof are provided. The circuit flip-flop structure utilizes two parallel data paths, and can complete the signal trigger of opposite phase in a single time pulse signal under the condition of reducing reverse input trigger.

Description

雙邊緣觸發的正反器電路與其移位暫存器 Double edge-triggered flip-flop circuit and its shift register

本申請涉及一種正反器電路,且具體地,有關一種雙邊緣觸發的正反器電路與其移位暫存器。 The present application relates to a flip-flop circuit, and in particular, to a double-edge-triggered flip-flop circuit and a shift register thereof.

在現行技術中,有幾種方法來實現雙邊沿觸發觸發器,第一種是額外設置輔助電路,一般為延遲的XOR電路,其在每個時脈信號邊緣產生內部脈衝信號。第二種方法是複製路徑,使觸發器能夠在每個時脈信號邊緣採樣數據,即是對於雙數據通路方法,此已有許多設計,如使用傳輸門邏輯、通過電晶體邏輯等。 In the prior art, there are several ways to realize the double edge-triggered flip-flop. The first is to additionally provide an auxiliary circuit, generally a delayed XOR circuit, which generates an internal pulse signal at each clock signal edge. The second method is to duplicate the path so that the flip-flop can sample the data at each clock signal edge, that is, for the dual data path method, there are many designs for this, such as using transmission gate logic, pass transistor logic, etc.

Johnson等人(T.A.Johnson and I.S.Kourtev,“A single latch,high speed double-edge triggered flip-flop(DETFF),”in Proc.Int.Conf.on Electronics,Circuits and Systems IEEE,pp.189-192,Jan.2001.)開發了一種靜態雙邊沿觸發觸發器,其與單邊觸發器(SETFF)在固定數據吞吐量相較下,需求的工作頻率下降將近一半,但卻未改善其運作功耗。 Johnson et al. (T.A.Johnson and I.S.Kourtev, "A single latch, high speed double-edge triggered flip-flop (DETFF)," in Proc.Int.Conf.on Electronics, Circuits and Systems IEEE, pp.189-192, Jan. 2001.) developed a static double-edge-triggered flip-flop, which compared with a single-edge flip-flop (SETFF) at a fixed data throughput, the required operating frequency was reduced by nearly half, but its operating power consumption was not improved.

Hossain等人(R.Hossain,L.D.Wronski,and A.Albicki,"Lowpower design using double edge trigger-ed flip-flops,"IEEE Trans.on VLSI Systems.,vol.2,no.2,pp.261-265,June 1994.)指出,雙邊沿觸發觸發器能夠顯著地節省能源,因為其複雜度比單邊觸發器(SETFF)要低。然而,該電路需要設計正反相輸入端, 因此需要設計雙端信號輸入電路,電晶體數量無法降低,製造工藝上亦相對複雜。 Hossain et al. (R. Hossain, L.D. Wronski, and A. Albicki, "Lowpower design using double edge trigger-ed flip-flops," IEEE Trans. on VLSI Systems., vol. 2, no. 2, pp. 261- 265, June 1994.) pointed out that the double-edge-triggered flip-flop can save energy significantly because its complexity is lower than that of the single-edge flip-flop (SETFF). However, this circuit needs to design the positive and negative input terminals, Therefore, a double-ended signal input circuit needs to be designed, the number of transistors cannot be reduced, and the manufacturing process is relatively complicated.

Sung等人(Y.-Y.Sung and R.-C.Chang,“A novel CMOS double-edge triggered flipflop for low-power application,”in Proc.IEEE Inter.Symp.on Circuits and Systems,pp:II-665,vol.2,May 2004.)設計了一種低功耗的雙緣觸發正反器(double edge triggered data flip flop,DETFF),其採用了低擺幅的時序選通技術。然而,該方法採用多電壓互感器,其存在著低電壓互感器比普通電晶體占地面積大,亞閾值電流增大的問題。 Sung et al. (Y.-Y.Sung and R.-C.Chang, "A novel CMOS double-edge triggered flipflop for low-power application," in Proc.IEEE Inter.Symp.on Circuits and Systems, pp:II -665, vol.2, May 2004.) designed a low-power double edge triggered data flip flop (DETFF), which uses a low-swing timing gating technology. However, this method uses multi-voltage transformers, which have the problems that low-voltage transformers occupy a larger area than ordinary transistors, and the subthreshold current increases.

此外,內建自測試(built-in self-test,BIST)由於提供了更廣泛的低功耗應用,被廣泛應用於任何VLSI電路的測試。Prayeen等人(Y.G.Praveen Kumar,B.S.Kariyappa and M.Z.Kurian,“Implementation of power efficient 8-bit reversible linear feedback shift register for BIST,”in Proc.Int.Conf.on Inventive Systems and Control(ICISC),pp.1-5.Jan.2017.)開發了一種可逆線性相移寄存器(8位),與傳統LFSR相比,該寄存器的功耗降低了10%,然而設計上的複雜性,造成對CMOS常規的工藝的適用性較低。 In addition, the built-in self-test (BIST) is widely used in the testing of any VLSI circuit because it provides a wider range of low-power applications. Prayeen et al. (Y.G.Praveen Kumar, B.S.Kariyappa and M.Z.Kurian, "Implementation of power efficient 8-bit reversible linear feedback shift register for BIST," in Proc.Int.Conf.on Inventive Systems and Control (ICISC), pp.1 -5.Jan.2017.) developed a reversible linear phase shift register (8-bit), which reduces the power consumption of the register by 10% compared with the traditional LFSR. applicability is low.

Abhilash等人(A.Bagalkoti,S.B.Shirol,S.Rama Krishna,P.Kumar and R.B.S,“Design and implementation of 8-bit LFSR,bit-swapping LFSR and weighted random test pattern generator:A performance improvement,”in Proc.Int.Conf.on Intelligent Sustainable Systems(ICISS),pp.82-86,Feb.2019.)提出了一種使用加權隨機測試模式發生器的LFSR(8位)來提高總體性能,這種方法可以很好地減少時延,但最終會導致更高的功耗。 Abhilash et al. (A. Bagalkoti, S.B. Shirol, S. Rama Krishna, P. Kumar and R.B.S, "Design and implementation of 8-bit LFSR, bit-swapping LFSR and weighted random test pattern generator: A performance improvement," in Proc .Int.Conf.on Intelligent Sustainable Systems (ICISS), pp.82-86, Feb.2019.) proposed an LFSR (8-bit) using a weighted random test pattern generator to improve the overall performance, which can be very Good for reducing latency, but ultimately leads to higher power consumption.

為了解決上述問題,本申請提出一種雙邊緣觸發的正反器電路與其移位暫存器,利用了兩條並行的數據路徑,在減少反向輸入觸發器的情況下,可以在單一時脈信號內完成相反相位的信號觸發。 In order to solve the above problems, the present application proposes a double-edge-triggered flip-flop circuit and its shift register, which utilizes two parallel data paths. Signal triggering of the opposite phase is completed within the

本申請通過以下技術方案予以實現:一種雙邊緣觸發的正反器電路,其包括:第一電晶體與第二電晶體的第一端共接資料輸入端,第二端分別連接第一非閘與第二非閘的輸入端;第三電晶體與第四電晶體的第二端共接第三非閘的輸入端,第一端分別連接第一非閘與第二非閘的輸出端,第三非閘的輸出端連接第一資料輸出端;第一電晶體與第四電晶體的控制端連接第一時脈信號,第二電晶體與第三電晶體的控制端連接第二時脈信號,第一時脈與第二時脈為反相。 The present application is achieved through the following technical solutions: a double-edge-triggered flip-flop circuit, comprising: first ends of a first transistor and a second transistor are connected to a data input end in common, and second ends are respectively connected to a first non-gate and the input end of the second non-gate; the second end of the third transistor and the fourth transistor are connected to the input end of the third non-gate, and the first end is respectively connected to the output end of the first non-gate and the second non-gate, The output terminal of the third non-gate is connected to the first data output terminal; the control terminals of the first transistor and the fourth transistor are connected to the first clock signal, and the control terminals of the second transistor and the third transistor are connected to the second clock signal signal, the first clock and the second clock are inverted.

可選的,第一時脈信號處於邏輯高電位且第二時脈信號為邏輯低電位時,第一電晶體和第四電晶體接通,第二電晶體和第三電晶體斷開;資料輸入端輸入的數據信號通過第一電晶體,由第一非閘翻轉形成第一翻轉信號,第一翻轉信號存儲在第一非閘與第三電晶體之間的節點。 Optionally, when the first clock signal is at a logic high potential and the second clock signal is at a logic low potential, the first transistor and the fourth transistor are connected, and the second transistor and the third transistor are disconnected; The data signal input from the input end passes through the first transistor, and is inverted by the first non-gate to form a first inversion signal, and the first inversion signal is stored at the node between the first non-gate and the third transistor.

可選的,第二時脈信號變為邏輯高電位且第三電晶體接通時,存儲在第一非閘與第三電晶體之間的節點的第一翻轉信號,其通過第三電晶體並被第三非閘作信號翻轉,以通過第一資料輸出端作信號輸出。 Optionally, when the second clock signal becomes a logic high potential and the third transistor is turned on, the first inversion signal stored at the node between the first non-gate and the third transistor passes through the third transistor. The signal is inverted by the third non-gate for signal output through the first data output terminal.

可選的,第一時脈信號處於邏輯低電位且第二時脈信號為邏輯高電位時,第一電晶體和第四電晶體斷開,第二電晶體和第三電晶體接通;資料輸入端輸入的數據信號通過第二電晶體,由第二非閘翻轉形成第二翻轉信號,第二翻轉信號存儲在第二非閘與第四電晶體之間的節點。 Optionally, when the first clock signal is at a logic low potential and the second clock signal is at a logic high potential, the first transistor and the fourth transistor are disconnected, and the second transistor and the third transistor are connected; The data signal input from the input end passes through the second transistor, and is inverted by the second non-gate to form a second inversion signal, and the second inversion signal is stored in the node between the second non-gate and the fourth transistor.

可選的,第二時脈信號變為邏輯高電位且第四電晶體接通時,存儲在第二非閘與第四電晶體之間的節點的第二翻轉信號,其通過第四電晶體並被第三非閘作信號翻轉,以通過第一資料輸出端作信號輸出。可選的,每一非閘分別並接再生電晶體,再生電晶體的第一端連接電源,控制端連接非閘的輸出端,第二端連接非閘的輸人端。 Optionally, when the second clock signal becomes a logic high level and the fourth transistor is turned on, the second inversion signal stored at the node between the second non-gate and the fourth transistor passes through the fourth transistor. The signal is inverted by the third non-gate for signal output through the first data output terminal. Optionally, each non-gate is connected in parallel with a regenerative transistor, the first end of the regenerative transistor is connected to the power supply, the control end is connected to the output end of the non-gate, and the second end is connected to the input end of the non-gate.

可選的,再生電晶體的控制端獲取所並接的非閘的輸出端的翻轉信號時,再生電晶體接通,電源通過再生電晶體傳輸至非閘的輸入端,以增加非閘接收到的數據信號的信號強度。 Optionally, when the control terminal of the regenerative transistor obtains the flip signal of the output terminal of the non-gate connected in parallel, the regenerative transistor is turned on, and the power is transmitted to the input terminal of the non-gate through the regenerative transistor, so as to increase the output received by the non-gate. The signal strength of the data signal.

可選的,第一電晶體、第二電晶體、第三電晶體與第四電晶體為N-型金氧半導體電晶體、P-型金氧半導體電晶體、互補式金氧半導體傳輸閘三種元件之任意組合。 Optionally, the first transistor, the second transistor, the third transistor and the fourth transistor are three types of N-type metal oxide semiconductor transistors, P-type metal oxide semiconductor transistors, and complementary metal oxide semiconductor transmission gates. Any combination of components.

可選的,第一時脈信號連接至第四反閘,以產生第二時脈信號。 Optionally, the first clock signal is connected to the fourth reverse gate to generate the second clock signal.

第二方面,本申請公開一種N位元移位暫存器,其包括N個正反器電路,N為大於1的正整數,每一正反器電路如申請專利範圍第1項至第8項中任一者形成;其中,每一正反器電路的輸入端連接前級正反器電路的輸出端,每一正反器電路的輸出信號經組合而形成N位元位移數據,第1級正反器電路的輸入端連接資料輸入端,第一時脈信號與第二時脈信號分別連接至每一正反器電路。 In a second aspect, the present application discloses an N-bit shift register, which includes N flip-flop circuits, where N is a positive integer greater than 1, and each flip-flop circuit is as described in items 1 to 8 in the scope of the patent application. Any one of the items is formed; wherein, the input terminal of each flip-flop circuit is connected to the output terminal of the previous stage flip-flop circuit, and the output signals of each flip-flop circuit are combined to form N-bit displacement data, the first The input terminal of the stage flip-flop circuit is connected to the data input terminal, and the first clock signal and the second clock signal are respectively connected to each flip-flop circuit.

本申請的有益效果為: The beneficial effects of this application are:

(1)本申請同採用雙邊緣觸發設計,與單邊觸發器(SETFF)在固定數據吞吐量相較下,仍具有需求的工作頻率下降將近一半的優勢,同為雙數據通路方法並減少反向輸入觸發器,可以在單一時脈信號內完成相反相位的信 號觸發。 (1) This application also adopts the double edge trigger design. Compared with the single edge trigger (SETFF) in fixed data throughput, it still has the advantage that the required operating frequency is reduced by nearly half. To input flip-flops, signals of opposite phases can be completed within a single clock signal. trigger.

(2)本案提出由設計通過去除反相輸入觸發器,同時通過再生電晶體使得輸入端連接的電晶體,其通過的信號得到了有效的增強,能明顯的維持或提升正反器的性能。 (2) This case proposes that by removing the inverting input trigger by design, and at the same time regenerating the transistor to make the input end connected to the transistor, the signal passing through it is effectively enhanced, which can significantly maintain or improve the performance of the flip-flop.

(3)就積體電路工藝上,在維持觸發器性能的前提下,省略反相輸入觸發器,無需增設額外的延遲電路,明確的減少電晶體的數量以減少內核面積,從而降低成本和功耗。 (3) In terms of integrated circuit technology, on the premise of maintaining the performance of the flip-flop, the inverting input flip-flop is omitted, no additional delay circuit needs to be added, and the number of transistors is clearly reduced to reduce the core area, thereby reducing cost and power. consumption.

100:1位元雙邊緣觸發正反器 100:1 bit double edge-triggered flip-flop

110:鎖存器 110: Latch

120:輸出保持器電路 120: Output Holder Circuit

MN11、MN12、MN13、MP11、MP12、MP13、MP14:電晶體 MN11, MN12, MN13, MP11, MP12, MP13, MP14: Transistor

I11、I12、I13、I14、I15、I16:非閘 I11, I12, I13, I14, I15, I16: non-gate

N11、N12、N13、N14、N15:1位元雙邊緣觸發正反器100的電路節點 N11, N12, N13, N14, N15: circuit nodes of 1-bit double edge-triggered flip-flop 100

200:正反器電路 200: Flip-flop circuit

MN21:第一電晶體 MN21: first transistor

MN22:第二電晶體 MN22: Second transistor

MN23:第三電晶體 MN23: The third transistor

MN24:第四電晶體 MN24: Fourth transistor

I21:第一非閘 I21: The first non-gate

I22:第二非閘 I22: Second non-gate

I23:第三非閘 I23: The third non-gate

I24:第四非閘 I24: Fourth non-gate

N21、N22、N23、N24、N25:正反器電路200的電路節點 N21, N22, N23, N24, N25: circuit nodes of the flip-flop circuit 200

MP21、MP22、MP24:再生電晶體 MP21, MP22, MP24: Regenerative transistors

MP23:重置電晶體 MP23: Reset Transistor

300:移位暫存器 300: Shift register

為了更清楚地說明本申請實施例或現有技術中的技術方案,下面將對實施例或現有技術描述中所需要使用的附圖作簡單地介紹,顯而易見地,下面描述中的附圖僅僅是本申請的一些實施例,對於本領域普通技術人員來講,在不付出創造性勞動的前提下,還可以根據這些附圖獲得其他的附圖。 In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the For some embodiments of the application, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

〔圖1〕為範例性的正反器電路;〔圖2〕是本申請一實施例的雙邊緣觸發的正反器電路;〔圖3〕為本申請一實施例的移位暫存器。 [FIG. 1] is an exemplary flip-flop circuit; [FIG. 2] is a double-edge-triggered flip-flop circuit according to an embodiment of the present application; [FIG. 3] is a shift register according to an embodiment of the present application.

技術方案和優點更加清楚,下面將結合本申請實施例中的附圖,對本申請實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例是本申請一部分實施例,而不是全部的實施例。基於本申請中的實施例,本領域普通技術人員在沒有作出創造性勞動前提下所獲得的所有其他實施例,都屬於本申請保護的範圍。 The technical solutions and advantages are clearer. The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not All examples. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

圖1為範例性的正反器電路,其公開了Hossain等人所描述的1位元雙邊緣觸發正反器的原理圖設計,該1位雙邊緣觸發正反器100由六個電晶體(MN11、MN12、MN13、MP11、MP12、MP13)、兩個鎖存器110和一個連接電源(VDD)輸出保持器電路120組成,非閘I15的輸入節點與輸出節點分別作為數據正相輸出(Q)與數據反相輸出(Qbar)。其中,電晶體(MN11、MN12、MN13)為NMOS電晶體,電晶體(MP11、MP12、MP13)為PMOS電晶體,鎖存器分別由非閘(I11)和非閘(I12)以及非閘(I13)和非閘(I14)的背靠背配置構成,輸出保持器電路120由非閘I15與電晶體MP14組成。當時脈信號(CK)由低至高時,上方路徑保持住資料(holding data),而下方路徑則在取樣資料(sampling data)。然而當時脈信號(CK)由高至低時,上方路徑保持住資料(holding data),而下方路徑則在取樣資料(sampling data)。然而當時脈由高至低時,上方路徑切換至取樣資料,而下方路徑則切換至保持資料。數據正相輸入(D)與數據反相輸入(Dbar)可以通過非閘(I16)配合數據的正相輸入產生。1位雙邊緣觸發正反器100的電路節點(N11、N12、N13、N14、N15)為示意相連接元件的等效接點。然而不論是通過正相(D)與反相(Dbar)的輸入,都需經過上/下方路徑的切換,才能完成保持資料與取樣資料的整體過程,不但時間長,資料路徑執行也長,這會導致消耗更多的功率。 FIG. 1 is an exemplary flip-flop circuit, which discloses the schematic design of the 1-bit dual-edge-triggered flip-flop described by Hossain et al. The 1-bit dual-edge-triggered flip-flop 100 consists of six transistors ( MN11, MN12, MN13, MP11, MP12, MP13), two latches 110 and an output holder circuit 120 connected to the power supply (VDD), the input node and output node of the non-gate I15 are respectively used as the data positive phase output (Q ) and the data inverted output (Qbar). Among them, the transistors (MN11, MN12, MN13) are NMOS transistors, the transistors (MP11, MP12, MP13) are PMOS transistors, and the latches are respectively composed of non-gate (I11) and non-gate (I12) and non-gate ( I13) and the non-gate (I14) are configured in a back-to-back configuration, and the output holder circuit 120 is composed of the non-gate I15 and the transistor MP14. When the clock signal (CK) goes from low to high, the upper path is holding data, while the lower path is sampling data. However, when the clock signal (CK) goes from high to low, the upper path is holding data, while the lower path is sampling data. However, when the clock goes from high to low, the upper path switches to sample data, and the lower path switches to hold data. The data non-inverting input (D) and the data inversion input (Dbar) can be generated through the non-gate (I16) with the data non-inverting input. The circuit nodes ( N11 , N12 , N13 , N14 , N15 ) of the 1-bit dual-edge-triggered flip-flop 100 are equivalent contacts representing connected elements. However, whether it is input through the normal phase (D) or the reverse phase (Dbar), it is necessary to switch the upper/lower path to complete the overall process of holding data and sampling data, which not only takes a long time, but also takes a long time to execute the data path. resulting in more power consumption.

圖2為本申請公開的一種雙邊緣觸發的正反器電路200,其包括:第一電晶體MN21與第二電晶體MN22的第一端共接資料輸入端(Din),第二端分別連接第一非閘I21與第二非閘I22的輸入端;第三電晶體MN23與第四電晶體MN24的第二端共接第三非閘I23的輸入端,第一端分別連接下面第一非閘I21與下面第二非閘I22的輸出端,下面第三非閘I23的輸出端連接第一資料輸出端;下面第一電晶體MN21與下面第四電晶體MN24的控制端連接第一時脈信號 (CK),下面第二電晶體與下面第三電晶體MN23的控制端連接第二時脈信號(CKB),下面第一時脈(CK)與下面第二時脈(CKB)為反相。正反器電路200的電路節點(N21、N22、N23、N24、N25)為示意相連接元件的等效接點,後續簡化說明為節點N21、節點N22、節點N23、節點N24、節點N25。 FIG. 2 is a double edge-triggered flip-flop circuit 200 disclosed in the present application, which includes: the first ends of the first transistor MN21 and the second transistor MN22 are connected to the data input terminal (Din) in common, and the second ends are respectively connected to the data input terminal (Din). The input terminals of the first non-gate I21 and the second non-gate I22; the second terminals of the third transistor MN23 and the fourth transistor MN24 are connected to the input terminal of the third non-gate I23, and the first terminals are respectively connected to the following first non-gate I23. The gate I21 is connected to the output terminal of the second non-gate I22 below, and the output terminal of the third non-gate I23 below is connected to the first data output terminal; the control terminal of the first transistor MN21 below and the control terminal of the fourth transistor MN24 below are connected to the first clock pulse Signal (CK), the control terminals of the second lower transistor and the lower third transistor MN23 are connected to the second clock signal (CKB), and the lower first clock (CK) and the lower second clock (CKB) are in opposite phases. The circuit nodes (N21, N22, N23, N24, N25) of the flip-flop circuit 200 are equivalent contacts representing connected elements, and the subsequent simplified descriptions are node N21, node N22, node N23, node N24, and node N25.

在本申請的一實施例中,如前述,本申請同為雙數據通道結構,與前述範例不同在於,本申請省略了反相輸入觸發電路的設計,採用時脈的正反相進行數據暫存與取樣作業。 In an embodiment of the present application, as mentioned above, the present application also has a dual data channel structure. The difference from the above example is that the present application omits the design of the inverting input trigger circuit, and uses the positive and negative phases of the clock to temporarily store data. work with sampling.

在本申請的一實施例中,第一時脈信號(CK)處於邏輯高電位且第二時脈信號(CKB)為邏輯低電位時,第一電晶體MN21和第四電晶體MN24接通,第二電晶體MN22和第三電晶體MN23斷開;資料輸入端(Din)輸入的數據信號通過第一電晶體MN21,由第一非閘I21翻轉形成第一翻轉信號,第一翻轉信號存儲在第一非閘I21與第三電晶體MN23之間的節點N23。 In an embodiment of the present application, when the first clock signal (CK) is at a logic high level and the second clock signal (CKB) is at a logic low level, the first transistor MN21 and the fourth transistor MN24 are turned on, The second transistor MN22 and the third transistor MN23 are disconnected; the data signal input from the data input terminal (Din) passes through the first transistor MN21 and is inverted by the first non-gate I21 to form a first inversion signal, and the first inversion signal is stored in A node N23 between the first non-gate I21 and the third transistor MN23.

在本申請的一實施例中,第二非閘I22與第四電晶體MN24之間的節點N24,其在前次時脈信號期間暫存有第二翻轉信號時,因為第四電晶體MN24接通,第二翻轉信號會被轉送至第三非閘I23。 In an embodiment of the present application, the node N24 between the second non-gate I22 and the fourth transistor MN24 temporarily stores the second inversion signal during the previous clock signal period, because the fourth transistor MN24 is connected to On, the second inversion signal will be forwarded to the third non-gate I23.

在本申請的一實施例中,第二時脈信號(CKB)變為邏輯高電位且第三電晶體MN23接通時,存儲在第一非閘I21與第三電晶體MN23之間的節點N23的第一翻轉信號,其通過第三電晶體MN23並被第三非閘I23作信號翻轉,以通過第一資料輸出端作信號輸出。 In an embodiment of the present application, when the second clock signal (CKB) becomes a logic high level and the third transistor MN23 is turned on, the node N23 stored between the first non-gate I21 and the third transistor MN23 The first inversion signal of , which passes through the third transistor MN23 and is inverted by the third non-gate I23 for signal output through the first data output terminal.

在本申請的一實施例中,第一時脈信號(CK)處於邏輯低電位且第二時脈信號(CKB)為邏輯高電位時,第一電晶體MN21和第四電晶體MN24斷開,第二電晶體MN22和第三電晶體MN23接通;資料輸入端(Din)輸入的數據 信號通過第二電晶體MN22,由第二非閘I22翻轉形成第二翻轉信號,第二翻轉信號存儲在第二非閘I22與第四電晶體MN24之間的節點N24。 In an embodiment of the present application, when the first clock signal (CK) is at a logic low level and the second clock signal (CKB) is at a logic high level, the first transistor MN21 and the fourth transistor MN24 are turned off, The second transistor MN22 and the third transistor MN23 are turned on; the data input from the data input terminal (Din) The signal passes through the second transistor MN22 and is inverted by the second non-gate I22 to form a second inversion signal, and the second inversion signal is stored at the node N24 between the second non-gate I22 and the fourth transistor MN24.

在本申請的一實施例中,第一時脈信號(CK)變為邏輯高電位且第四電晶體(MN24)接通時,存儲在第二非閘I22與第四電晶體MN24之間的節點(N24)的第二翻轉信號,其通過第四電晶體MN24並被第三非閘I23作信號翻轉,以通過第一資料輸出端作信號輸出。 In an embodiment of the present application, when the first clock signal (CK) becomes a logic high level and the fourth transistor (MN24) is turned on, the voltage stored between the second non-gate I22 and the fourth transistor MN24 The second inversion signal of the node (N24) passes through the fourth transistor MN24 and is inverted by the third non-gate I23 for signal output through the first data output terminal.

在本申請的一實施例中,第一非閘I21與第三電晶體MN23之間的節點N23,其在前次時脈信號期間暫存有第一翻轉信號時,因為第三電晶體MN23接通,第一翻轉信號會被轉送至第三非閘I23。 In an embodiment of the present application, the node N23 between the first non-gate I21 and the third transistor MN23 temporarily stores the first inversion signal during the previous clock signal period, because the third transistor MN23 is connected to On, the first inversion signal will be forwarded to the third non-gate I23.

在本申請的一實施例中,每一非閘(I21、I22、I23)分別並接再生電晶體(MP21、MP22、MP24),如圖2,再生電晶體MP21的第一端連接電源(VDD),控制端連接非閘I21的輸出端(同節點N23),再生電晶體MP21的第二端連接非閘I21的輸入端(同節點N21);再生電晶體MP22的第一端連接電源(VDD),控制端連接非閘I22的輸出端(同節點N24),再生電晶體MP22的第二端連接非閘I22的輸入端(同節點N22);再生電晶體MP24的第一端連接電源(VDD),控制端連接非閘I23的輸出端(同第一資料輸出端Q),再生電晶體MP24的第二端連接非閘I23的輸入端(同節點N25與第二資料輸出端Qbar)。 In an embodiment of the present application, each non-gate (I21, I22, I23) is respectively connected in parallel with a regenerative transistor (MP21, MP22, MP24), as shown in FIG. 2, the first end of the regenerative transistor MP21 is connected to a power supply (VDD ), the control terminal is connected to the output terminal of the non-gate I21 (same node N23), the second terminal of the regeneration transistor MP21 is connected to the input terminal of the non-gate I21 (same node N21); the first terminal of the regeneration transistor MP22 is connected to the power supply (VDD ), the control terminal is connected to the output terminal of the non-gate I22 (same node N24), the second terminal of the regeneration transistor MP22 is connected to the input terminal of the non-gate I22 (same node N22); the first terminal of the regeneration transistor MP24 is connected to the power supply (VDD ), the control terminal is connected to the output terminal of the non-gate I23 (same as the first data output terminal Q), and the second terminal of the regenerative transistor MP24 is connected to the input terminal of the non-gate I23 (same as the node N25 and the second data output terminal Qbar).

在本申請的一實施例中,再生電晶體(MP21、MP22、MP24)的控制端獲取所並接的非閘(I21、I22、I23)的輸出端的翻轉信號時,再生電晶體(MP21、MP22、MP24)接通,電源(VDD)通過再生電晶體(MP21、MP22、MP24)傳輸至非閘(I21、I22、I23)的輸入端,以增加非閘(I21、I22、I23)接收到的數據信號的信號強度。 In an embodiment of the present application, when the control terminal of the regenerative transistors (MP21, MP22, MP24) obtains the inversion signal of the output terminals of the non-gates (I21, I22, I23) connected in parallel, the regenerative transistors (MP21, MP22) , MP24) is turned on, the power supply (VDD) is transmitted to the input terminal of the non-gate (I21, I22, I23) through the regeneration transistor (MP21, MP22, MP24), so as to increase the received by the non-gate (I21, I22, I23) The signal strength of the data signal.

即是指,本申請公開的雙路徑模型,其使正反器電路能夠在每個時脈信號邊緣上採樣數據。當時脈信號(CK)處於邏輯高電位時,第一電晶體MN21和第四電晶體MN24接通,其中第二電晶體MN22和第三電晶體MN23斷開。輸入信號(Din)通過第一電晶體MN21,然後信號被第一非閘I21翻轉。該翻轉信號存儲在節點N23,直到時脈信號變為邏輯低。然而,對於下一個半時脈信號週期,時脈信號CKB變為邏輯高電位,第三電晶體MN23打開。因此,節點N23處先前存儲的翻轉信號通過第三電晶體MN23並被第三非閘I23翻轉,並且給出關於複位的輸出Q。另一方面,當時脈信號為邏輯低時,輸入信號(Din)通過第二電晶體MN22,並且繼續與先前所述的路徑進行相同的數據處理。再生電晶體MP21、再生電晶體MP22和再生電晶體MP24是與電源VDD相關聯的再生電晶體,它們有助於增強信號並且不會遇到任何電壓降。通過這個連續的過程,在時脈信號的每一個邊緣都可以觀察到輸出Q。因此,當時脈信號進行逆轉換時,兩通路的作用被交換,表現出交替的數據採樣、暫存與轉移行為。 That is, the dual path model disclosed in this application enables the flip-flop circuit to sample data on each clock signal edge. When the clock signal (CK) is at a logic high level, the first transistor MN21 and the fourth transistor MN24 are turned on, and the second transistor MN22 and the third transistor MN23 are turned off. The input signal (Din) passes through the first transistor MN21, and then the signal is inverted by the first non-gate I21. The toggle signal is stored at node N23 until the clock signal goes logic low. However, for the next half clock signal period, the clock signal CKB goes to a logic high level and the third transistor MN23 is turned on. Therefore, the previously stored inversion signal at the node N23 passes through the third transistor MN23 and is inverted by the third non-gate I23, and gives an output Q on reset. On the other hand, when the clock signal is logic low, the input signal (Din) passes through the second transistor MN22 and continues the same data processing as previously described. Regenerative transistor MP21, regenerative transistor MP22, and regenerative transistor MP24 are regenerative transistors associated with power supply VDD that help boost the signal and do not experience any voltage drop. Through this continuous process, the output Q is observed at each edge of the clock signal. Therefore, when the clock signal is inversely converted, the roles of the two channels are exchanged, showing alternate data sampling, temporary storage and transfer behavior.

在本申請的一實施例中,第一電晶體MN21、第二電晶體MN22、第三電晶體MN23與第四電晶體MN24為N-型金氧半導體電晶體、P-型金氧半導體電晶體、互補式金氧半導體傳輸閘三種元件之任意組合。 In an embodiment of the present application, the first transistor MN21 , the second transistor MN22 , the third transistor MN23 and the fourth transistor MN24 are N-type metal-oxide-semiconductor transistors and P-type metal-oxide-semiconductor transistors , Complementary metal oxide semiconductor transmission gate any combination of three components.

如圖2,正反器電路200還包括重置電晶體MP23,重置電晶體MP23的第一端連接電源VDD,重置電晶體MP23的第二端連接節點25,重置電晶體MP23的控制端連接重置信號端(Reset),當重置信號端(Reset)的信號為邏輯高電位時,重置電晶體MP23為接通,整個正反器電路200的第一資料輸出端(Q)與第二資料輸出端(Qbar)的輸出會被重置,如第一資料輸出端(Q)持續輸出為0,第二資料輸出端(Qbar)持續輸出為1。 2, the flip-flop circuit 200 further includes a reset transistor MP23, the first terminal of the reset transistor MP23 is connected to the power supply VDD, the second terminal of the reset transistor MP23 is connected to the node 25, and the control of the reset transistor MP23 The terminal is connected to the reset signal terminal (Reset), when the signal of the reset signal terminal (Reset) is a logic high level, the reset transistor MP23 is turned on, and the first data output terminal (Q) of the entire flip-flop circuit 200 The output of the second data output terminal (Qbar) will be reset. For example, the first data output terminal (Q) continuously outputs 0, and the second data output terminal (Qbar) continuously outputs 1.

如圖2,在一些實施例中,第一時脈信號(CK)可連接至第四反閘(I24),以產生第二時脈信號(CKB),再將第一時脈信號(CK)與第二時脈信號(CKB)分別連接至各電晶體的控制端,如此得以簡化時脈信號的輸入線路。 As shown in FIG. 2, in some embodiments, the first clock signal (CK) can be connected to the fourth flip gate (I24) to generate the second clock signal (CKB), and then the first clock signal (CK) and the second clock signal (CKB) are respectively connected to the control terminals of the transistors, so that the input circuit of the clock signal can be simplified.

就圖1與圖2相較,在圖1所示1位元雙邊緣觸發正反器的電路節點N11上,有兩個因電路運行而產生的柵極電容(電晶體MN12/電晶體MP13產生)和兩個擴散電容(非閘I11/非閘I12產生)。而圖2所示正反器電路200的節點N23處,有兩個因運行而產生的柵極電容(由第一電晶體MN21/再生電晶體MP21產生),但只有一個擴散電容(由第一非閘I21)。因此,節點N23的負載隨著充放電時間的減少而減小,從而導致功率和能耗的降低。在數位CMOS電路中,開關功率定義為:Psw

Figure 110113248-A0305-02-0012-1
f.C.V2 (1) Comparing Fig. 1 and Fig. 2, on the circuit node N11 of the 1-bit double edge-triggered flip-flop shown in Fig. 1, there are two gate capacitances (transistor MN12/transistor MP13 generated by the circuit operation) ) and two diffusion capacitors (generated by non-gate I11/non-gate I12). However, at the node N23 of the flip-flop circuit 200 shown in FIG. 2, there are two gate capacitors (generated by the first transistor MN21/regenerative transistor MP21) due to operation, but only one diffusion capacitor (generated by the first transistor MN21/regenerative transistor MP21). not gate I21). Therefore, the load of the node N23 decreases as the charging and discharging time decreases, resulting in a decrease in power and energy consumption. In digital CMOS circuits, the switching power is defined as: Psw
Figure 110113248-A0305-02-0012-1
fCV2 (1)

其中PSW是電晶體的開關功率,C是電容,V是電源,f是頻率。假設兩種設計的f和V相同,節點N11(公式2)和節點N23(公式3)的功率可以表示為:PN11

Figure 110113248-A0305-02-0012-3
2Cg+2Cdiff (2) where PSW is the switching power of the transistor, C is the capacitance, V is the power supply, and f is the frequency. Assuming the same f and V for both designs, the power at node N11 (Equation 2) and node N23 (Equation 3) can be expressed as: PN11
Figure 110113248-A0305-02-0012-3
2Cg+2Cdiff (2)

PN23

Figure 110113248-A0305-02-0012-4
2Cg+Cdiff (3) PN23
Figure 110113248-A0305-02-0012-4
2Cg+Cdiff (3)

其中CG為柵極電容(0.4nF),Cdiff為擴散電容(0.25nF),其比值分別為8:5。就0.18-μm的CMOS製作工藝。得出PN11大於PN23的1.2倍。在時脈的相反階段,節點N13和節點N24消耗相同數量的功率。但由於本申請圖2所示正反器電器200,其使用的電晶體數量小於圖1的電路設計,因此有助於減少功耗。 CG is the gate capacitance (0.4nF), Cdiff is the diffusion capacitance (0.25nF), and the ratios are 8:5. On the 0.18-μm CMOS fabrication process. It is concluded that PN11 is 1.2 times larger than PN23. During opposite phases of the clock, node N13 and node N24 consume the same amount of power. However, since the number of transistors used in the flip-flop appliance 200 shown in FIG. 2 of the present application is smaller than that of the circuit design in FIG. 1 , it helps to reduce power consumption.

圖3為本申請一實施例的移位暫存器,如圖3所示,其公開N 位元的移位暫存器300。此移位暫存器包括N個正反器電路200,N為大於1的正整數,每一個正反器電路的輸出(Q)可表示一個位元,如第0級正反器電路至第7級正反器(DETFF-0~DETFF-7)的輸出即能組成8位元(bits)數據信號。每一正反器電路如前述中任一者正反器電路200形成;其中,每一正反器電路的輸入端連接前級正反器電路的輸出端,每一正反器電路的輸出信號經組合而形成N位元位移數據,第0級正反器電路的輸入端連接資料輸入端(Din),第一時脈信號(CK)與第二時脈信號(CKB)分別連接至每一正反器電路200。時脈信號(Clock)連接每一正反器的觸發信號輸入端,且作反相時脈觸發。重置信號線路(Reset)則連接至每一正反器電路的重置信號端(Reset)。如前述,當重置信號端(Reset)的信號為邏輯高電位時,重置電晶體MP23為接通,每一個正反器電路的第一資料輸出端(Q)與第二資料輸出端(Qbar)的輸出會被重置,如各正反器電路的第一資料輸出端(Q1-Q7)持續輸出為0,最高級的第7級正反器的第二資料輸出端(Q7bar)持續輸出為1。 FIG. 3 is a shift register according to an embodiment of the application, as shown in FIG. 3 , which discloses N Shift register 300 for bits. The shift register includes N flip-flop circuits 200, N is a positive integer greater than 1, and the output (Q) of each flip-flop circuit can represent a bit, such as the 0th stage of the flip-flop circuit to the 1st stage of the flip-flop circuit. The output of the 7-stage flip-flop (DETFF-0~DETFF-7) can form an 8-bit data signal. Each flip-flop circuit is formed as any one of the above-mentioned flip-flop circuits 200; wherein, the input end of each flip-flop circuit is connected to the output end of the previous-stage flip-flop circuit, and the output signal of each flip-flop circuit is N-bit displacement data is formed by combining, the input terminal of the 0th stage flip-flop circuit is connected to the data input terminal (Din), and the first clock signal (CK) and the second clock signal (CKB) are respectively connected to each Flip-flop circuit 200. The clock signal (Clock) is connected to the trigger signal input end of each flip-flop, and is triggered by an inverted clock. The reset signal line (Reset) is connected to the reset signal terminal (Reset) of each flip-flop circuit. As mentioned above, when the signal of the reset signal terminal (Reset) is at a logic high level, the reset transistor MP23 is turned on, and the first data output terminal (Q) and the second data output terminal (Q) of each flip-flop circuit ( The output of Qbar) will be reset. For example, the first data output terminal (Q1-Q7) of each flip-flop circuit continues to output 0, and the second data output terminal (Q7bar) of the seventh-level flip-flop of the highest level continues to output. The output is 1.

綜上,本申請的雙邊緣觸發的正反器電路與其移位暫存器,其(1)本申請同採用雙邊緣觸發設計,與單邊觸發器(SETFF)在固定數據吞吐量相較下,仍具有需求的工作頻率下降將近一半的優勢,同為雙數據通路方法並減少反向輸入觸發器,可以在單一時脈信號內完成相反相位的信號觸發。(2)本案提出由設計通過去除反相輸入觸發器,同時通過再生電晶體使得輸入端連接的電晶體,其通過的信號得到了有效的增強,能明顯的維持或提升正反器的性能。(3)就積體電路工藝上,在維持觸發器性能的前提下,省略反相輸入觸發器,無需增設額外的延遲電路,明確的減少電晶體的數量以減少內核面積,從而降低成本和功耗。(4)本申請所提出的移位暫存器設計可以適用於現行的CMOS工藝(如 90nm)實現的。 To sum up, the dual-edge-triggered flip-flop circuit and its shift register of the present application, (1) the present application also adopts the dual-edge-triggered design, which is compared with the single-edge flip-flop (SETFF) in a fixed data throughput , still has the advantage of reducing the required operating frequency by nearly half. It is also a dual data path method and reduces the reverse input trigger, and can complete the signal triggering of the opposite phase within a single clock signal. (2) This case proposes that by removing the inverting input trigger by design, and at the same time regenerating the transistor to make the input end connected to the transistor, the signal passing through it is effectively enhanced, which can significantly maintain or improve the performance of the flip-flop. (3) In terms of integrated circuit technology, on the premise of maintaining the performance of the flip-flop, the inverting input flip-flop is omitted, no additional delay circuit needs to be added, and the number of transistors is clearly reduced to reduce the core area, thereby reducing cost and power. consumption. (4) The design of the shift register proposed in this application can be applied to the current CMOS process (such as 90nm) to achieve.

以上實施例僅用以說明本申請的技術方案,而非對其限制;儘管參照前述實施例對本申請進行了詳細的說明,本領域的普通技術人員應當理解:其依然可以對前述各實施例所記載的技術方案進行修改,或者對其中部分技術特徵進行等同替換;而這些修改或者替換,並不使相應技術方案的本質脫離本申請各實施例技術方案的精神和範圍。 The above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The recorded technical solutions are modified, or some technical features thereof are equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions in the embodiments of the present application.

200:正反器電路 200: Flip-flop circuit

MN21:第一電晶體 MN21: first transistor

MN22:第二電晶體 MN22: Second transistor

MN23:第三電晶體 MN23: The third transistor

MN24:第四電晶體 MN24: Fourth transistor

I21:第一非閘 I21: The first non-gate

I22:第二非閘 I22: Second non-gate

I23:第三非閘 I23: The third non-gate

I24:第四非閘 I24: Fourth non-gate

N21、N22、N23、N24、N25:正反器電路200的電路節點 N21, N22, N23, N24, N25: circuit nodes of the flip-flop circuit 200

MP21、MP22、MP24:再生電晶體 MP21, MP22, MP24: Regenerative transistors

MP23:重置電晶體 MP23: Reset Transistor

Claims (8)

一種雙邊緣觸發的正反器電路,其包括:第一電晶體(MN21)與第二電晶體(MN22)的第一端共接資料輸入端(Din),第二端分別連接第一非閘(I21)與第二非閘(I22)的輸入端;第三電晶體(MN23)與第四電晶體(MN24)的第二端共接第三非閘(I23)的輸入端,第一端分別連接該第一非閘(I21)與該第二非閘(I22)的輸出端,該第三非閘(I23)的輸出端連接第一資料輸出端;每一非閘(I21、I22、I23)分別並接再生電晶體(MP21、MP22、MP24),該再生電晶體的第一端連接電源(VDD),控制端連接非閘的輸出端,第二端連接非閘的輸入端;該再生電晶體的控制端獲取所並接的該非閘的輸出端的翻轉信號時,該再生電晶體接通,該電源(VDD)通過該再生電晶體傳輸至該非閘的輸入端,以增加該非閘接收到的該數據信號的信號強度;該第一電晶體(MN21)與該第四電晶體(MN24)的控制端連接第一時脈信號(CK),該第二電晶體與該第三電晶體(MN23)的控制端連接第二時脈信號(CKB),該第一時脈(CK)與該第二時脈(CKB)為反相。 A double-edge-triggered flip-flop circuit, comprising: first ends of a first transistor (MN21) and a second transistor (MN22) are commonly connected to a data input end (Din), and second ends are respectively connected to a first non-gate (I21) and the input terminal of the second non-gate (I22); the second terminal of the third transistor (MN23) and the fourth transistor (MN24) are connected to the input terminal of the third non-gate (I23), and the first terminal The output terminals of the first non-gate (I21) and the second non-gate (I22) are respectively connected, and the output terminal of the third non-gate (I23) is connected to the first data output terminal; each non-gate (I21, I22, I23) are respectively connected in parallel with regenerative transistors (MP21, MP22, MP24), the first end of the regenerative transistor is connected to the power supply (VDD), the control end is connected to the output end of the non-gate, and the second end is connected to the input end of the non-gate; the When the control terminal of the regenerative transistor obtains the inversion signal of the output terminal of the non-gate connected in parallel, the regenerative transistor is turned on, and the power (VDD) is transmitted to the input terminal of the non-gate through the regenerative transistor to increase the reception of the non-gate The signal strength of the data signal received; the control terminals of the first transistor (MN21) and the fourth transistor (MN24) are connected to the first clock signal (CK), the second transistor and the third transistor The control terminal of (MN23) is connected to the second clock signal (CKB), and the first clock (CK) and the second clock (CKB) are in opposite phases. 如請求項1所述的雙邊緣觸發的正反器電路,其中,該第一時脈信號(CK)處於邏輯高電位且該第二時脈信號(CKB)為邏輯低電位時,該第一電晶體(MN21)和該第四電晶體(MN24)接通,該第二電晶體(MN22)和該第三電晶體(MN23)斷開;該資料輸入端(Din)輸入的數據信號通過該第一電晶體(MN21),由該第一非閘(I21)翻轉形成第一翻轉信號,該第一翻轉信號存儲在該第一非閘(I21)與該第三電晶體(MN23)之間的節點(N23)。 The double edge-triggered flip-flop circuit of claim 1, wherein when the first clock signal (CK) is at a logic high level and the second clock signal (CKB) is at a logic low level, the first clock signal (CK) is at a logic high level. The transistor (MN21) and the fourth transistor (MN24) are connected, the second transistor (MN22) and the third transistor (MN23) are disconnected; the data signal input from the data input terminal (Din) passes through the The first transistor (MN21) is turned over by the first non-gate (I21) to form a first inversion signal, and the first inversion signal is stored between the first non-gate (I21) and the third transistor (MN23) node (N23). 如請求項2所述的雙邊緣觸發的正反器電路,其中,該第二時脈信號(CKB)變為邏輯高電位且該第三電晶體(MN23)接通時,存儲在該第一非閘(I21)與該第三電晶體(MN23)之間的節點(N23)的該第一翻轉信號,其通過該第三電晶體(MN23)並被該第三非閘(I23)作信號翻轉,以通過第一資料輸出端作信號輸出。 The double-edge-triggered flip-flop circuit as claimed in claim 2, wherein when the second clock signal (CKB) becomes a logic high level and the third transistor (MN23) is turned on, it is stored in the first The first inversion signal of the node (N23) between the non-gate (I21) and the third transistor (MN23), which passes through the third transistor (MN23) and is signaled by the third non-gate (I23) Inverted for signal output through the first data output terminal. 如請求項1所述的雙邊緣觸發的正反器電路,其中,該第一時脈信號(CK)處於邏輯低電位且該第二時脈信號(CKB)為邏輯高電位時,該第一電晶體(MN21)和該第四電晶體(MN24)斷開,該第二電晶體(MN22)和該第三電晶體(MN23)接通;該資料輸入端(Din)輸入的數據信號通過該第二電晶體(MN22),由該第二非閘(I22)翻轉形成第二翻轉信號,該第二翻轉信號存儲在該第二非閘(I22)與該第四電晶體(MN24)之間的節點(N24)。 The double edge-triggered flip-flop circuit of claim 1, wherein when the first clock signal (CK) is at a logic low level and the second clock signal (CKB) is at a logic high level, the first clock signal (CK) is at a logic high level. The transistor (MN21) and the fourth transistor (MN24) are disconnected, the second transistor (MN22) and the third transistor (MN23) are connected; the data signal input from the data input terminal (Din) passes through the The second transistor (MN22) is inverted by the second non-gate (I22) to form a second inversion signal, and the second inversion signal is stored between the second non-gate (I22) and the fourth transistor (MN24) node (N24). 如請求項4所述的雙邊緣觸發的正反器電路,其中,該第一時脈信號(CK)變為邏輯高電位且該第四電晶體(MN24)接通時,存儲在該第二非閘(I22)與該第四電晶體(MN24)之間的節點(N24)的該第二翻轉信號,其通過該第四電晶體(MN24)並被該第三非閘(I23)作信號翻轉,以通過第一資料輸出端作信號輸出。 The double-edge-triggered flip-flop circuit as claimed in claim 4, wherein when the first clock signal (CK) becomes a logic high level and the fourth transistor (MN24) is turned on, it is stored in the second The second inversion signal of the node (N24) between the non-gate (I22) and the fourth transistor (MN24), which passes through the fourth transistor (MN24) and is signaled by the third non-gate (I23) Inverted for signal output through the first data output terminal. 如請求項1所述的雙邊緣觸發的正反器電路,其中,該第一電晶體、該第二電晶體、該第三電晶體與該第四電晶體為N-型金氧半導體電晶體、P-型金氧半導體電晶體、互補式金氧半導體傳輸閘三種元件之任意組合。 The double edge-triggered flip-flop circuit of claim 1, wherein the first transistor, the second transistor, the third transistor and the fourth transistor are N-type metal oxide semiconductor transistors , P-type metal oxide semiconductor transistor, complementary metal oxide semiconductor transmission gate, any combination of three components. 如請求項1所述的雙邊緣觸發的正反器電路,其中,第一時脈信號(CK)連接至第四反閘(I24),以產生第二時脈信號(CKB)。 The double edge-triggered flip-flop circuit of claim 1, wherein the first clock signal (CK) is connected to the fourth flip gate (I24) to generate the second clock signal (CKB). 一種N位元移位暫存器,其包括N個正反器電路,N為大於1的正整數,每一正反器電路如申請專利範圍第1項至第6項中任一者形成;其中,每一正反器電路的輸入端連接前級正反器電路的輸出端,每一正反器電路的輸出信號經組合而形成N位元位移數據,第1級正反器電路的輸入端連接資料輸入端(Din),第一時脈信號(CK)與第二時脈信號(CKB)分別連接至每一正反器電路。 An N-bit shift register, comprising N flip-flop circuits, where N is a positive integer greater than 1, and each flip-flop circuit is formed according to any one of items 1 to 6 in the scope of the patent application; The input end of each flip-flop circuit is connected to the output end of the previous-stage flip-flop circuit, the output signals of each flip-flop circuit are combined to form N-bit displacement data, and the input of the first-stage flip-flop circuit The terminal is connected to the data input terminal (Din), and the first clock signal (CK) and the second clock signal (CKB) are respectively connected to each flip-flop circuit.
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Citations (2)

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Publication number Priority date Publication date Assignee Title
US6794916B1 (en) * 2003-05-30 2004-09-21 International Business Machines Corporation Double edge-triggered flip-flops
TW200830326A (en) * 2006-10-31 2008-07-16 Advanced Micro Devices Inc Memory system including a high-speed serial buffer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794916B1 (en) * 2003-05-30 2004-09-21 International Business Machines Corporation Double edge-triggered flip-flops
TW200830326A (en) * 2006-10-31 2008-07-16 Advanced Micro Devices Inc Memory system including a high-speed serial buffer

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