TWI771049B - Wafer fixture structure and processing apparatus for causing high-temperature creep deformation - Google Patents

Abstract

A wafer fixture structure includes a first fixture, a second fixture and a force applying assembly. The first fixture has a first inclined surface and the second fixture has a second inclined surface. When the first fixture and the second fixture lean against each other to clamp a wafer between the first inclined surface and the second inclined surface, the first inclined surface and the second inclined surface are parallel to each other and inclined relatively to a pressure applying direction, and the first fixture and the second fixture are adapted to apply a pressure to the wafer through a force applied along the pressure applying direction. The force applying assembly is adapted to be connected to the first fixture and the second fixture and apply the force to the first and second fixtures. The force applying assembly includes first, second and third screw coupling components, the first fixture is adapted to be connected to the first screw coupling component, the third screw coupling component is adapted to be screw-coupled to the first screw coupling component, the second screw coupling component is adapted to be screw-coupled to the third screw coupling component , and the force is generated by the first, second and third screw coupling components.

Description

Wafer fixture structure and processing equipment causing high temperature creep deformation

The present invention relates to a jig structure and processing equipment, and in particular, to a wafer jig inclined design structure, and a high-temperature processing equipment for wafers that can easily activate and develop high-temperature creep deformation.

In the semiconductor industry, wafer materials include, for example, silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), indium antimonide (InSb), gallium nitride (GaN), silicon carbide ( SiC) or zinc selenide (ZnSe). Generally speaking, the method of manufacturing a wafer includes first forming an ingot, and then slicing the ingot to obtain a wafer. Ingots are produced, for example, in a high temperature environment. At present, the growth methods of crystal ingots include Czochralski process, Physical Vapor Transport (PVT), High Temperature Chemical Vapor Deposition (HT-CVD) method. And liquid phase epitaxy (Liquid Phase Epitaxy, LPE) and so on.

A seed crystal is placed in a high temperature furnace, and the seed crystal contacts the gaseous or liquid feedstock and forms semiconductor material on the surface of the seed crystal until an ingot of the desired size is obtained. Crystal ingots can have different crystal structures depending on the manufacturing method and the raw materials. For example, silicon carbide crystals include 3C-silicon carbide, 4H-silicon carbide, 6H-silicon carbide, and the like. 3C-silicon carbide belongs to the cubic crystal system, while 4H-silicon carbide and 6H-silicon carbide belong to the hexagonal crystal system.

Crystal ingots grow in a high temperature environment ranging from hundreds of degrees Celsius to thousands of degrees Celsius. During the growth of the crystal ingot, the upper end of the ingot, that is, the end adjacent to the seed crystal, is called the seed end. The lower end of the ingot, which is also the end away from the seed, is called the dome end. The temperature difference between the seed end and the dome tip may vary from tens to hundreds of degrees Celsius depending on the location. In this case, residual stress may occur inside the crystal due to temperature difference, and there is no time for stress re-distribution and strain relief. If the ingot is silicon carbide, the end of the seed crystal is a silicon surface, and the top of the dome is a carbon surface. The silicon surface of the ingot can develop residual compressive stress, and the carbon surface of the ingot can exhibit residual tensile stress.

After the ingot growth is completed, the ingot is cooled to room temperature by furnace cooling or other means. When the crystal ingot is cooled below the plastic-elastic transition temperature, the shrinkage deformation caused by the cooling continues, and the stress can no longer be relieved by the timely plastic deformation of the crystal (such as dislocation generation, slippage and/or bonding) . For example, the dislocation can slip along a specific slip direction on a corresponding slip plane and disappear to the crystal surface. If the crystal ingot only considers elastic deformation and ignores the characteristics of slow plastic deformation (for example: high temperature creep), the thermal shrinkage of the ingot roughly conforms to the following formula:

ɛ= kΔΤ

In the above formula, ɛ is the strain, k is the thermal expansion coefficient, and ΔΤ is the temperature difference. When cooling the ingot, if the temperature of the seed crystal end is different from that of the dome end, the seed end and the dome end will start to cool down from different temperatures, so that the heat shrinkage of the seed end is different from that of the dome end. For example, the seed end may be cooled from 1800°C to 20°C at room temperature, and the dome tip may be cooled from 1900°C to 20°C. This situation leads to different temperature gradients at the two ends of the crystal ingot, and the time sequence of shrinkage is not synchronized, resulting in residual compressive stress and tensile stress. Simply put, since the ΔΤ at the seed end is different from the ΔΤ at the dome end, the ɛ at the seed end is different from the ɛ at the dome end.

After the ingot is cooled, the head and tail ends of the ingot with poor shape are removed by a cutting machine, and then the ingot is ground to a desired size (eg, 3 inches to 12 inches) with a grinding wheel. In some processes, a flat edge or V-shaped groove is ground on the edge of the ingot. This flat edge or V-shaped groove is suitable for marking the crystal orientation of the ingot or for fixing the ingot.

Then the ingot is sliced to obtain a plurality of wafers. For example, the method of slicing the ingot includes cutting with a knife or steel wire in combination with abrasive grains (eg, diamond grains). In some cases, compressive and tensile stresses remain within the wafer like the ingot. In some processes, the corners of the wafer are ground to be rounded to prevent the corners of the wafer from cracking due to collision.

Next, grinding and polishing processes are performed on the wafer to improve the surface quality of the wafer. Methods of performing grinding and polishing processes on wafers include, for example, physical grinding processes and chemical mechanical grinding processes. In the physical polishing process, for example, a polishing slurry containing diamond particles or other particles with higher hardness is used to polish the wafer surface with a polishing pad. The physical polishing process mainly uses mechanical force to treat the wafer surface. The chemical mechanical polishing process uses corrosive slurry and abrasives with polishing pads to polish the wafer surface. The corrosive slurry in the chemical mechanical polishing process can chemically react with the wafer surface, turning the uneven part of the wafer surface into a material with less hardness, thereby making it easier for the abrasive to remove the wafer surface Uneven parts.

After the grinding and polishing process, the thickness of the wafer is reduced (eg, hundreds of microns). The residual tensile stress and compressive stress inside the wafer will be partially released (stress relaxation and stress re-distribution) due to the reduction of wafer thickness, resulting in bow and/or wafer appearance. Geometric warping of deflection (Warp).

Therefore, how to improve the above-mentioned geometric warpage after dicing or grinding a silicon carbide wafer is an important issue in physical vapor transport (PVT) crystal growth and semiconductor material manufacturing process.

The present invention provides an inclined design structure of a wafer jig, and a wafer processing equipment, which can effectively improve the geometric warpage of the wafer by annealing treatment at a lower temperature.

The wafer jig structure of the present invention includes a first jig, a second jig and a force applying component. The first fixture has a first inclined surface, and the second fixture has a second inclined surface. The first jig and the second jig are abutted against each other so that the first inclined surface faces the second inclined surface. The force applying component is connected to the first jig and the second jig. The force applying component includes a first screw element, a second screw element and a third screw element, the first fixture is connected to the first screw element, and the third screw element is screwed to the first screw element and the second screw joint is screwed to the third screw joint so that the first fixture and the second fixture are located between the first screw joint piece and the second screw joint piece.

In an embodiment of the present invention, when the wafer is sandwiched between the first inclined surface and the second inclined surface, the first jig and the second jig together form a cylindrical structure.

In an embodiment of the present invention, the above-mentioned first screwing member has a first external thread, the second screwing member has a second external thread, the third screwing member has an internal thread, the first external thread and The second external thread is adapted to be screwed to different sections of the internal thread respectively.

In an embodiment of the present invention, the above-mentioned third screw element is cylindrical and is suitable for accommodating the first jig, the second jig, at least part of the first screw element and at least part of the second screw element.

In an embodiment of the present invention, the first fixture and the second fixture each have a concave portion, the first screw element and the second screw element each have a convex portion, and each convex portion is suitable for being embedded in a corresponding recess.

In an embodiment of the present invention, the above-mentioned concave portion is an annular groove, and the convex portion is an annular flange.

In an embodiment of the present invention, the above-mentioned concave portion includes a concave tapered structure, and the convex portion includes a convex tapered structure.

In an embodiment of the present invention, the above-mentioned wafer jig structure further includes a stopper, wherein a groove is formed on the first inclined surface, and the stopper is movably arranged in the groove, when the second jig is separated from the groove. When the first fixture is used, the stopper is suitable for protruding from the groove to stop the wafer on the first inclined surface. When the second fixture is abutted against the first fixture, the stopper is blocked by the second fixture. Pushed against and buried in the groove.

In an embodiment of the present invention, the above-mentioned wafer fixture structure further includes two sacrificial layers, and the two sacrificial layers are adapted to be respectively disposed on the first inclined surface and the second inclined surface to contact the wafer.

In an embodiment of the present invention, each of the above-mentioned sacrificial layers is a silicon carbide stopper or a silicon carbide CVD coating.

The wafer jig structure of the present invention includes a first jig, a second jig and a force applying component. The first fixture has a first inclined surface, and the second fixture has a second inclined surface. When the first jig and the second jig abut against each other to sandwich a wafer between the first inclined surface and the second inclined surface, the first inclined surface and the second inclined surface are parallel to each other and inclined to a pressing direction, and The first jig and the second jig are suitable for pressing the wafer by an external force applied along the pressing direction. The force applying component is suitable for being connected to the first jig and the second jig, and applies external force to the first jig and the second jig. The force applying component includes a first screw element, a second screw element and a third screw element, the first fixture is suitable for connecting with the first screw element, and the third screw element is suitable for screwing with the first screw element. A screw element, the second screw element is suitable for screwing on the third screw element, so that the first fixture and the second fixture are located between the first screw element and the second screw element, and the external force is driven by the first and second screw elements. It is generated by the screwing force between the screwing member, the second screwing member and the third screwing member.

The wafer processing equipment of the present invention includes the above-mentioned wafer fixture structure and a heat source. The heat source is adapted to heat the wafer sandwiched between the first bevel and the second bevel.

Based on the above, in the wafer jig structure of the present invention, the first jig and the second jig clamp the wafer by the first inclined surface and the second inclined surface respectively, so that the wafer is annealed in a tilted state, And part of the stress can be properly relieved. Therefore, the wafer jig structure of the present invention can effectively improve the geometric defects of the wafer through the annealing process.

FIG. 1 is a schematic top view of a wafer processing apparatus according to an embodiment of the present invention. Please refer to FIG. 1 , the wafer processing apparatus 10 of this embodiment includes a wafer fixture structure 100 and a heat source 12 . The wafer fixture structure 100 is used for holding the diced or ground wafer, and the heat source 12 is used for heating the wafer held by the wafer fixture structure 100 to perform annealing and creep treatment on the wafer. In FIG. 1, only a part of the heat source 12 is shown, and the heat source 12 is shown as being disposed around the wafer fixture structure 100, but this is only for illustration, and the heat source 12 can be any suitable form of heating device, For example, the provided heat is conducted to the wafer through the wafer fixture structure 100 , which may be thermal resistance heating or induction heating, which is not limited in the present invention.

FIG. 2 is a side view of the wafer fixture structure of FIG. 1 . FIG. 3 is a cross-sectional view of the wafer fixture structure of FIG. 2 along line I-I. FIG. 4 is an exploded view of the wafer fixture structure of FIG. 2 . FIG. 5 is a schematic cross-sectional view of the first jig and the second jig of FIG. 2 clamping the wafer. Referring to FIGS. 2 to 4 , the wafer jig structure 100 of this embodiment includes a base 105 , a first jig 110 and a second jig 120 . The material of the first jig 110 and the second jig 120 is, for example, graphite. BC and other materials or W, Mo and other high-temperature anti-carbonization metal materials or metal compounds, and the materials of the first jig 110 and the second jig 120 can be selected from different or the same material according to the design or requirements of the process. This is restricted. The base 105 is used for carrying the first jig 110 and the second jig 120 . The first fixture 110 has a first inclined surface 110a, and the second fixture 120 has a second inclined surface 120a. When the first jig 110 and the second jig 120 abut against each other as shown in FIG. 5 , the first inclined surface 110a faces the second inclined surface 120a and a clamping space CS is formed between the first inclined surface 110a and the second inclined surface 120a, A wafer W is sandwiched between the first inclined surface 110a and the second inclined surface 120a in the sandwiching space CS. The first jig 110 and the second jig 120, for example, together form a cylindrical structure, and the first slope 110a and the The second inclined surfaces 120a are parallel to each other and are inclined to a pressing direction D1, D2 along the inclined direction D3, and the pressing directions D1, D2 are parallel to the axial direction A of the cylindrical structure (marked in FIG. 2). The heat source 12 shown in FIG. 1 is suitable for heating the wafer W sandwiched between the first inclined surface 110a and the second inclined surface 120a. The first jig 110 and the second jig 120 are adapted to apply the pressure required for the annealing process to the wafer W by the external force applied along the pressing directions D1 and D2 . The wafer jig structure 100 of this embodiment can apply and adjust the external force to the first jig 110 and the second jig 120 by any suitable force-applying component or weight, which is not limited in the present invention.

Referring to FIG. 3 , the inner thread 166a of the third screw element 166 in the present embodiment has a distance d between the first jig 110 and the second jig 120 without contacting each other, so as to prevent the third screw element 166 from contacting with each other. The first jig 110 and the second jig 120 generate a force with each other to affect the pressing force on the wafer W by the first jig 110 and the second jig 120 . The distance d may be 2-6 mm, preferably 2.2-5.57 mm, more preferably 2.28-5.57 mm, and most preferably 2-3 mm.

FIG. 6 is a partial enlarged view of the first jig, the second jig and the wafer of FIG. 5 . Referring to FIG. 6 , when the first jig 110 and the second jig 120 clamp the wafer W, the peripheral portion 110d of the first jig 110 and the peripheral portion 120d of the second jig 120 surround the clamping space CS and its surrounding area. inside the wafer W, and there is a gap G between the peripheral portion 110d of the first jig 110 and the peripheral portion 120d of the second jig 120 without contacting each other, so as to prevent the first jig 110 and the second jig 120 from being in contact with each other. The pressing directions D1 and D2 generate a force with each other to affect the pressing on the wafer W. The gap G is greater than 0, which is, for example, about 200 microns.

As described above, the first jig 110 and the second jig 120 in this embodiment clamp the wafer W by the first inclined surface 110 a and the second inclined surface 120 a respectively, so that the wafer W is annealed in a tilted state. The geometric warpage of the wafer W is effectively improved by the annealing creep process. Specifically, in the case of residual tensile stress and compressive stress in the wafer W, after the wafer W is thinned by grinding and polishing, the degree of influence of the stress on it gradually becomes larger and will cause it to be bowed ( Geometry changes in Bow and/or Warp. Wherein, the tensile stress and the compressive stress have a tendency to change the bow value of the wafer W to a negative value, for example. In order to improve this geometric defect, in this embodiment, in a graphite heating reduction furnace with a temperature of about 1200-1600 degrees Celsius and a pressure of about 100-1000 Mpa, the first jig 110 and the second jig 120 are used to pair the cut and Wafers W that have not been ground, polished, or have been ground, but unpolished, exert an external compressive force. The wafer W is inclined due to the arrangement of the first inclined surface 110a of the first jig 110 and the second inclined surface 120a of the second jig 120 , that is, the normal line of the carbon surface of the wafer W is inclined and is along the line of <11 -20> Directional extension. Therefore, as long as the external compressive force exerted by the first jig 110 and the second jig 120 on the wafer W exceeds a certain critical value, the shearing force will drive the existing dislocation in the <11-20> direction. The carbon surface of the wafer W slides to eliminate the shear force parallel to the carbon surface of the wafer W, and the inner dislocation of the silicon carbide crystal can be in the <0001> crystal plane along the <11-20> direction with the smallest shear force The slip is driven to an annealing creep effect, where the smaller the tilt angle of the wafer W, the greater the external compressive force required. The sliding and climbing of the misalignment allows the residual stress in the wafer W to be partially relieved. In this embodiment, for example, the above-mentioned process of applying the external compressive force is performed at a predetermined temperature (such as the above-mentioned 1200-1600 degrees Celsius) for 1-3 hours, and then the furnace power is turned off. The bow value of the wafer W is improved after being processed in this way, and even becomes a positive bow value, which is changed according to the surface curvature design of 11a and 11b, wherein the first inclined surface 110a and the second inclined surface 120a have a predetermined positive bow shape, for example (Bow) value without preventing the bow value of the wafer W sandwiched therebetween from becoming positive, for example, FIG. bow value, or according to process design or requirements, by changing the surface curvatures of 11a and 11b to have different or same predetermined bow values. Then, after further grinding and polishing (such as chemical mechanical polishing, CMP) to thin the wafer W, the influence of the stress on the wafer W gradually increases, and its bow value changes to a negative value. Before grinding and polishing, the circle W has a positive arc shape value by heat treatment as above, so after grinding and polishing, its arc shape value is changed to be between -25 microns and 25 microns due to the influence of the stress. normal values between -15 microns and 15 microns.

In this embodiment, the inclination angles of the first inclined surface 110a and the second inclined surface 120a relative to the pressing directions D1 and D2 may be between 0 and 45 degrees, preferably between 15 and 35 degrees, and more preferably between 20 and 20 degrees. Between 30 degrees, the best is between 22 and 28 degrees, and the best is 25 degrees. By designing the inclination angles of the first inclined surface 110a and the second inclined surface 120a to the above-mentioned angles, the inclination directions of the first inclined surfaces 110a and the second inclined surfaces 120a can be roughly corresponding to the aforementioned <11-20> direction, so as to make the dislocation along the <11-20> direction as described above. The shear force parallel to the carbon surface of the wafer W is eliminated by sliding on the carbon surface of the wafer W.

The wafer jig structure 100 of this embodiment may further include two sacrificial layers 140 as shown in FIG. 5 . The two sacrificial layers 140 can be respectively disposed on the first inclined surface 110a of the first jig 110 and the second inclined surface 120a of the second jig 120 to contact the wafer W, so as to prevent the wafer W from directly contacting the first jig 110 and the second jig 120 . The jig 120 produces an unexpected chemical reaction at a high temperature. For example, if the material of the wafer W is silicon carbide, the material of the sacrificial layer 140 can be the same as the material of the wafer W, which is a silicon carbide stopper, but the invention is not limited to this. FIG. 8 is a partial enlarged view of a first jig, a second jig and a wafer according to another embodiment of the present invention. The difference between the embodiment shown in FIG. 8 and the embodiment shown in FIG. 6 is that the first jig 110 and the second jig 120 of FIG. 8 are respectively coated with silicon carbide CVD on the first inclined surface 110 a and the second inclined surface 120 a A sacrificial layer 140' is formed by coating.

In other embodiments, the first sloped surface 110a and the second sloped surface 120a may have recesses, respectively, so that when the sacrificial layer 140 is a wafer, the wafer can be positioned in the recesses and is less likely to slip off. The depth of the recessed portion is greater than the thickness of the sacrificial layer.

The wafer jig structure 100 further includes a force applying component 160. The force applying component 160 is adapted to be connected to the first jig 110 and the second jig 120 and apply the external force to the first jig 110 and the second jig 120.

Specifically, the force applying component 160 of this embodiment includes a first screw element 162 , a second screw element 164 and a third screw element 166 . The first screw element 162 has a first external thread 162 a , the second screw member 164 has a second external thread 164a, the third screw member 166 is cylindrical and has an internal thread 166a, the first external thread 162 and the second external thread 164 are suitable for screwing on the internal thread respectively Different sections of 166a. The user can first connect the first jig 110 to the first screw element 162, and then screw the inner thread 166a of the third screw element 166 to the first outer thread 162a of the first screw element 162, so that the first The fixture 110 and the first screw member 162 are accommodated inside the third screw member 166 . Next, when the first jig 110 has already carried the wafer, the user can accommodate the second jig 120 inside the third screw element 166 so that the second jig 120 and the first jig 110 share the same Clamp the wafer. Then, the user can screw the second outer thread 164a of the second screw element 164 to the inner thread 166a of the third screw element 166 so that at least part of the second screw element 164 is accommodated inside the third screw element 166 , and the first jig 110 and the second jig 120 are located between the first screw element 162 and the second screw element 164 . At this time, the first screw element 162 and the second screw element 164 abut against the first jig 110 and the second jig 120, respectively. Therefore, the external force can be generated by the screwing force between the first screwing member 162 , the second screwing member 164 and the third screwing member 166 , and the magnitude of the external force can be changed by changing the screwing force. and be adjusted. In this embodiment, for example, a torque wrench capable of applying a predetermined torque is used to rotate the second screw member 164 to accurately adjust the magnitude of the external force.

FIG. 9 illustrates the wafer fixture structure of FIG. 4 viewed from another perspective. Referring to FIGS. 4 and 9 , in this embodiment, the first jig 110 and the second jig 120 each have a concave portion C1 , and the first threaded member 162 and the second threaded member 164 each have a convex portion P1 . Each concave portion C1 is, for example, an annular concave groove, and each convex portion P1 is, for example, an annular flange, and each convex portion P1 is suitable for being embedded in the corresponding concave portion C1, so that the first jig 110 and the second jig 120 are respectively stable. It is combined with the first screw element 162 and the second screw element 164 .

FIG. 10 is a partial enlarged view of the wafer fixture structure of FIG. 4 , which corresponds to the region R of FIG. 4 . 11A and 11B are flow charts of operations of the stopper of FIG. 4 . The wafer jig structure 100 of this embodiment further includes a stopper 170 shown in FIG. 10 . Correspondingly, the first inclined surface 110a of the first fixture 110 has a groove 110c, and the stopper 170 is movably disposed in the groove 110c. When the second jig 120 is separated from the first jig 110, the stopper 170 protrudes from the groove 110c as shown in FIG. 11A to stop the wafer on the first slope 110a and prevent the wafer from slipping off the first jig 110a. Jig 110. When the second jig 120 abuts against the first jig 110 , the stopper 170 is pushed by the second jig 120 and embedded in the groove 110 c as shown in FIG. 11B .

FIG. 12 is a partial exploded view of a wafer fixture structure according to another embodiment of the present invention. The difference between the embodiment shown in FIG. 12 and the embodiment shown in FIG. 4 is that the convex part P2 and the concave part C2 in FIG. The joint piece 164 can be accurately positioned on the first jig 110 and the second jig 120 by the mutual cooperation of the convex tapered structure and the concave tapered structure.

FIG. 13 is a partial exploded view of a wafer fixture structure according to another embodiment of the present invention. The difference between the embodiment shown in FIG. 13 and the embodiment shown in FIG. 12 is that the concave portion C3 in FIG. 13 includes an inner surface C31 parallel to the pressing directions D1 and D2, and the convex portion P3 includes an inner surface C31 parallel to the pressing directions D1 and D2. There is an outer surface P31, the inner surface C31 and the outer surface P31 are suitable for abutting against each other. By the mutual cooperation of the inner surface C31 and the outer surface P31, the lateral blocking force between the first and second screw elements 162, 164 and the first and second jigs 110, 120 can be increased, which can resist The component force of the external force applied to the first jig 110 and the second jig in the inclined direction, so that the upper limit of the external force can be correspondingly increased.

FIG. 14 is a partial exploded view of a wafer fixture structure according to another embodiment of the present invention. The difference between the embodiment shown in FIG. 14 and the embodiment shown in FIGS. 12 and 13 is that the convex part P4 and the concave part C4 in FIG. 14 respectively include a convex conical structure and a concave conical structure, and the concave part C4 further includes a parallel An inner surface C41 in the pressing directions D1 and D2, and the convex portion P4 further includes an outer surface P41 parallel to the pressing directions D1 and D2. The inner surface C41 and the outer surface P41 are adapted to abut against each other. Thereby, the first threaded member 162 and the second threaded member 164 can be positioned on the first jig 110 and the second jig reliably by the mutual cooperation of the convex tapered structure and the concave tapered structure 120, and by the mutual cooperation of the inner surface C41 and the outer surface P41, the lateral blocking force between the first and second screw elements 162, 164 and the first and second jigs 110, 120 can be increased, It can resist the component force of the external force applied to the first jig 110 and the second jig in the inclined direction, so that the upper limit of the external force can be correspondingly increased.

10: Wafer Processing Equipment 12: Heat source 100, 100A, 100B: Wafer Fixture Structure 105: Base 110: The first fixture 110a: first bevel 110c: groove 110d, 120d: Peripheral part 120: Second Jig 120a: Second bevel 140, 140': sacrificial layer 160: Force components 162: The first screw joint 162a: The first external thread 164: Second screw 164a: Second external thread 166: The third screw 166a: Internal thread 170: Stopper A: Axial CS:Clamping Space C1~C4: Recess C31, C41: inner surface D1, D2: pressure direction D3: Tilt direction d: spacing G: Gap P1~P4: convex part P31, P41: outer surface R: area W: Wafer

FIG. 1 is a schematic top view of a wafer processing apparatus according to an embodiment of the present invention. FIG. 2 is a side view of the wafer fixture structure of FIG. 1 . FIG. 3 is a cross-sectional view of the wafer fixture structure of FIG. 2 along line I-I. FIG. 4 is an exploded view of the wafer fixture structure of FIG. 2 . FIG. 5 is a schematic cross-sectional view of the first jig and the second jig of FIG. 2 clamping the wafer. FIG. 6 is a partial enlarged view of the first jig, the second jig and the wafer of FIG. 5 . FIG. 7 shows that the first slope and the second slope of FIG. 5 have positive arcuate values. FIG. 8 is a partial enlarged view of a first jig, a second jig and a wafer according to another embodiment of the present invention. FIG. 9 illustrates the wafer fixture structure of FIG. 4 viewed from another perspective. FIG. 10 is a partial enlarged view of the wafer jig structure of FIG. 4 . 11A and 11B are flow charts of operations of the stopper of FIG. 4 . FIG. 12 is a partial exploded view of a wafer fixture structure according to another embodiment of the present invention. FIG. 13 is a partial exploded view of a wafer fixture structure according to another embodiment of the present invention. FIG. 14 is a partial exploded view of a wafer fixture structure according to another embodiment of the present invention.

110: The first fixture

110a: first bevel

110d, 120d: Peripheral part

120: Second Jig

120a: Second bevel

140: Sacrificial Layer

CS:Clamping Space

D1, D2: pressure direction

D3: Tilt direction

W: Wafer

Claims (13)

A wafer jig structure, comprising: a first jig with a first slope; a second jig with a second slope, wherein the first jig and the second jig abut against each other to make the The first inclined surface faces the second inclined surface; and a force applying component is connected to the first fixture and the second fixture, wherein the force applying component includes a first screw element, a second screw element and a A third screw element, the first fixture is connected to the first screw element, the third screw element is screwed to the first screw element, the second screw element is screwed to the third screw element so that the first jig and the second jig are located between the first screw part and the second screw part. The wafer jig structure as claimed in claim 1, wherein when the wafer is sandwiched between the first inclined surface and the second inclined surface, the first jig and the second jig together form a cylindrical shape structure. The wafer fixture structure according to claim 1, wherein the first screw element has a first outer thread, the second screw element has a second outer thread, and the third screw element has an inner thread , the first external thread and the second external thread are suitable for screwing on different sections of the internal thread respectively. The wafer jig structure according to claim 1, wherein the third screw member is cylindrical and is suitable for accommodating the first jig, the second jig, at least part of the first screw member and at least part of the first jig the second screw. The wafer jig structure of claim 1, wherein the first jig and the second jig each have a concave portion, the first screw member and the second screw member each have a convex portion, and each The convex portion is adapted to be embedded in the corresponding concave portion. The wafer jig structure according to claim 5, wherein the concave portion is an annular groove, and the convex portion is an annular flange. The wafer fixture structure of claim 5, wherein the concave portion includes a concave tapered structure, and the convex portion includes a convex tapered structure. The wafer jig structure according to claim 1, further comprising a stopper, wherein a groove is formed on the first inclined surface, the stopper is movably arranged in the groove, and when the second jig is separated When the first fixture is used, the stopper is adapted to protrude from the groove to stop the wafer on the first inclined surface. When the second fixture is abutted against the first fixture, The stopper is pushed against by the second fixture and embedded in the groove. The wafer jig structure according to claim 1, further comprising two sacrificial layers, the two sacrificial layers are adapted to be respectively disposed on the first inclined surface and the second inclined surface to contact the wafer. The wafer fixture structure according to claim 9, wherein each of the sacrificial layers is a silicon carbide stopper or a silicon carbide CVD coating. A wafer jig structure, comprising: a first jig with a first slope; a second jig with a second slope, wherein when the first jig and the second jig abut against each other, the When a wafer is sandwiched between the first inclined surface and the second inclined surface, the first inclined surface and the second inclined surface are parallel to each other and inclined to a pressing direction, and The first jig and the second jig are adapted to press the wafer by an external force applied along the pressing direction; and a force-applying component is adapted to be connected to the first jig and the first jig and the first jig. Two jigs, and the external force is applied to the first jig and the second jig, wherein the force applying component includes a first screw element, a second screw element and a third screw element, the first screw element The fixture is suitable for being connected to the first screwing piece, the third screwing piece is suitable for screwing on the first screwing piece, and the second screwing piece is suitable for screwing on the third screwing piece so that the The first jig and the second jig are located between the first threaded member and the second threaded member, and the external force is caused by the first threaded member, the second threaded member and the third threaded member The screw force between the parts is generated. A wafer processing equipment includes: a wafer fixture structure as claimed in claim 11; and a heat source suitable for heating the wafer sandwiched between the first inclined surface and the second inclined surface. The wafer jig structure according to claim 1, wherein there is a distance between the inner thread of the third screw element, the first jig and the second jig.

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