TWI770758B - High Electron Mobility Transistor with Reflective Structure - Google Patents
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Abstract
本發明提供一種具反射結構之高電子移動率電晶體,其係複數個電極,一源極、一汲極以及一閘極,其各別耦接於一第一基板之一上方,該第一半導體層耦接於該些個電極之一上方,該第二半導體層耦接於該第一半導體層之一上方,該第三半導體層耦接於該第二半導體層之一上方,該緩衝層耦接於該第三半導體層之一上方,該第二基板設置於該緩衝層之一上方,該反射層設置該第二基板之一上方,利用此覆晶式晶片封裝結合反射層之結構,進一步縮小通訊晶片之體積。The present invention provides a high electron mobility transistor with a reflective structure, which comprises a plurality of electrodes, a source electrode, a drain electrode and a gate electrode, which are respectively coupled above one of a first substrate, the first The semiconductor layer is coupled over one of the electrodes, the second semiconductor layer is coupled over one of the first semiconductor layers, the third semiconductor layer is coupled over one of the second semiconductor layers, and the buffer layer is coupled on one of the third semiconductor layers, the second substrate is disposed above one of the buffer layers, the reflective layer is disposed above one of the second substrates, and the flip-chip package is combined with the reflective layer structure, Further reduce the size of the communication chip.
Description
本發明是關於一種具反射結構之高電子移動率電晶體,尤其係指一種覆晶式且具反射層之晶片結構。 The present invention relates to a high electron mobility transistor with a reflective structure, in particular to a flip-chip chip structure with a reflective layer.
隨著時代的發展,無線傳輸及無線通訊的技術已被廣泛地使用於各行各業,並已逐漸取代傳統資訊傳播的方式,進而創造出新世代的電子產業。為滿足無線傳輸及通訊的需求,各式電子產品無一不具有無線傳輸的功能,其中具無線天線的積體電路(integrated circuit,IC)即為不可或缺的元件之一。 With the development of the times, the technology of wireless transmission and wireless communication has been widely used in all walks of life, and has gradually replaced the traditional way of information dissemination, thus creating a new generation of electronic industry. In order to meet the needs of wireless transmission and communication, all kinds of electronic products have the function of wireless transmission, among which an integrated circuit (IC) with a wireless antenna is one of the indispensable components.
傳統無線天線IC晶片主要包括天線及微電路,並具有天線封裝在晶片內(antenna in package,AIP)的結構,通過在電子產品內設置IC晶片,即可和接收或傳送端進行無線訊號傳輸作業,因此,無線天線IC晶片的測試也是生產成本的主要部份。 The traditional wireless antenna IC chip mainly includes an antenna and a microcircuit, and has an antenna in package (AIP) structure. By placing an IC chip in an electronic product, the wireless signal transmission operation can be performed with the receiving or transmitting end. , Therefore, the test of the wireless antenna IC chip is also a major part of the production cost.
而未來的無線晶片產品主要目標是,針對較高的操作頻率範圍(GHz)進行設計,例如5G(第5代行動網路或稱第5代無線系統),5G通訊在預期以大於或等於15GHz的頻率運作,而現今的WiGig(無線千兆聯盟)產品係以60GHz運作,包括車用雷達及醫學成像等其他應用係利用位於公釐波頻率(例如30GHz-300GHz)的無線通訊技術,其中,使用氮化鎵(GaN)的高電子移動率晶體電晶體(High electron mobility transistor,HEMT)備受關注。 The main goal of future wireless chip products is to design for a higher operating frequency range (GHz), such as 5G (5th generation mobile network or 5th generation wireless system). 5G communication is expected to be greater than or equal to 15GHz. The current WiGig (Wireless Gigabit Alliance) products operate at 60GHz, and other applications, including automotive radar and medical imaging, use wireless communication technology at millimeter wave frequencies (such as 30GHz-300GHz). High electron mobility transistors (HEMTs) using gallium nitride (GaN) are attracting attention.
參閱第5圖,其為習知晶片結構示意圖,如圖所示,習知高電子移動率晶體電晶體之結構大致包含:基板、緩衝層、各個含氮化鎵之半導體層以及源極、汲極、閘極,以對外電性連接。 Referring to FIG. 5, which is a schematic diagram of the structure of a conventional chip, as shown in the figure, the structure of a conventional high electron mobility transistor generally includes: a substrate, a buffer layer, each semiconductor layer containing gallium nitride, and a source electrode, a drain electrode and a drain electrode. pole and gate for external electrical connection.
氮化鎵是極穩定的化合物,又是堅硬的高熔點材料,熔點約為1700℃,氮化鎵具有高的電離度,在III-V族化合物中是最高的(0.5或0.43)。在大氣壓力下,氮化鎵晶體一般是六方纖鋅礦結構。 Gallium nitride is a very stable compound and a hard high-melting material with a melting point of about 1700°C. Gallium nitride has a high degree of ionization, which is the highest (0.5 or 0.43) among III-V compounds. At atmospheric pressure, gallium nitride crystals generally have a hexagonal wurtzite structure.
氮化鎵技術可以追溯到1970年代,美國無線電公司(RCA)開發了一種氮化鎵工藝來製造發光二極體(LED),自上世紀90年代開始,基於氮化鎵的發光二極體大放異彩,目前已是發光二極體的主流,現在市場上銷售的很多發光二極體就是使用藍寶石襯底的氮化鎵技術。 Gallium nitride technology dates back to the 1970s, when Radio Corporation of America (RCA) developed a gallium nitride process to manufacture light-emitting diodes (LEDs). It has become the mainstream of light-emitting diodes, and many light-emitting diodes on the market now use gallium nitride technology on sapphire substrates.
隨著氮化鎵半導體的製造成本成本降低,市場成長的空間巨大。氮化鎵與碳化矽(SiC)、矽(Si)材料各有其優勢領域;氮化鎵材料電子飽和漂移速率最高,適合高頻率應用場景,但是在高壓高功率場景不如氮化鎵;又,隨著成本的下降,氮化鎵有望在中低功率領域替代二極體、IGBT、MOSFET等矽基功率元件,以電壓來分,0~300V是矽材料占據優勢,600V以上是碳化矽占據優勢,300V~600V之間則是氮化鎵材料的優勢領域。 As the manufacturing cost of gallium nitride semiconductors decreases, there is huge room for market growth. Gallium nitride and silicon carbide (SiC) and silicon (Si) materials have their own advantages in areas; With the decline in cost, gallium nitride is expected to replace silicon-based power components such as diodes, IGBTs, and MOSFETs in low- and medium-power fields. According to voltage, 0~300V is dominated by silicon materials, and above 600V is dominated by silicon carbide. , 300V~600V is the dominant field of gallium nitride materials.
5G將帶來半導體材料革命性的變化,隨著通訊頻段向高頻遷移,基站和通信設備需要支持高頻性能的射頻器件,氮化鎵的優勢將逐步凸顯,這正是前一節討論的地方。正是這一優勢,使得氮化鎵成為高操作頻率範圍電晶體的關鍵技術。 5G will bring revolutionary changes in semiconductor materials. With the migration of communication frequency bands to high frequencies, base stations and communication equipment need radio frequency devices that support high frequency performance. The advantages of gallium nitride will gradually become prominent, which is exactly what was discussed in the previous section. . It is this advantage that makes gallium nitride a key technology for transistors in the high operating frequency range.
相比3G、4G時代,5G時代的射頻器件將會以幾十倍、甚至上百倍的數量增加。在5G毫米波應用上,氮化鎵的高功率密度特性在實現 相同覆蓋條件及用戶追蹤功能下,可有效減少收發通道數及整體方案的尺寸。 Compared with the 3G and 4G eras, the number of radio frequency devices in the 5G era will increase by dozens or even hundreds of times. In 5G millimeter wave applications, the high power density characteristics of gallium nitride are being realized Under the same coverage conditions and user tracking function, the number of transceiver channels and the overall solution size can be effectively reduced.
然而,對於上述應用無線通訊晶片,目前的設計通常係使用DIP封裝(dual in-line package),其使通訊晶片的體積增加,導致使用該封裝晶片的產品體積、厚度也難以進一步縮小,且習知之無線通訊晶片也因外部環境光之照射(通訊晶片之殼體通常較薄),使其壽命減少,因此,產業界需要一種能減少無線通訊晶片之體積,且能增加其使用時間之封裝結構。 However, for the above-mentioned wireless communication chip, the current design usually uses a DIP package (dual in-line package), which increases the volume of the communication chip, making it difficult to further reduce the volume and thickness of products using the package chip. It is known that the wireless communication chip also has a reduced life due to the external ambient light (the casing of the communication chip is usually thin). Therefore, the industry needs a package structure that can reduce the volume of the wireless communication chip and increase its use time. .
有鑑於上述習知技術之問題,本發明提供一種具反射結構之高電子移動率電晶體,其係將複數個電極以連接件耦接基板,並設置於基板之上方,並利用反射層之設置反射外部光線,以保護下方之半導體層,以此結構進一步減少晶片之厚度。 In view of the above-mentioned problems of the prior art, the present invention provides a high electron mobility transistor with a reflective structure, wherein a plurality of electrodes are coupled to a substrate with connectors, and are arranged above the substrate, and the reflective layer is used. Reflecting external light to protect the underlying semiconductor layer, this structure further reduces the thickness of the chip.
本發明之一目的在於提供一種具反射結構之高電子移動率電晶體,其係將複數個電極各別以連接件耦接於基板上方,並利用反射層之設置於各半導體層之上方,以反射外部之光線,保護下方之該些個半導體層,以此結構進一步減少晶片之厚度,以及增加晶片整體之壽命。 An object of the present invention is to provide a high electron mobility transistor with a reflective structure, wherein a plurality of electrodes are respectively coupled above a substrate by a connector, and a reflective layer is disposed above each semiconductor layer, so as to Reflecting external light and protecting the semiconductor layers below, this structure further reduces the thickness of the chip and increases the overall life of the chip.
為達到上述所指稱之各目的與功效,本發明提供一種具反射結構之高電子移動率電晶體,其包含:一第一基板、複數個電極、一第一半導體層、一第二半導體層、一第三半導體層、一緩衝層、一第二基板以及一反射層,該第一基板之一上方設置複數個線路,該些個電極包含一源極、一汲極以及一閘極,該源極、該汲極以及該閘極各別對應耦接於些個線路之一上方,該第一半導體層耦接於該些個電極之一上方,該 第二半導體層耦接於該第一半導體層之一上方,該第三半導體層耦接於該第二半導體層之一上方,該緩衝層耦接於該第三半導體層之一上方,該第二基板設置於該緩衝層之一上方,該反射層設置該第二基板之一上方;利用此覆晶式晶片封裝結合反射層之結構,進一步縮小通訊晶片之體積。 In order to achieve the above-mentioned objects and effects, the present invention provides a high electron mobility transistor with a reflective structure, comprising: a first substrate, a plurality of electrodes, a first semiconductor layer, a second semiconductor layer, A third semiconductor layer, a buffer layer, a second substrate and a reflective layer, a plurality of lines are arranged on one of the first substrates, the electrodes include a source electrode, a drain electrode and a gate electrode, the source electrode The electrode, the drain electrode and the gate electrode are respectively coupled over one of the lines, the first semiconductor layer is coupled over one of the electrodes, the The second semiconductor layer is coupled over one of the first semiconductor layers, the third semiconductor layer is coupled over one of the second semiconductor layers, the buffer layer is coupled over one of the third semiconductor layers, and the third semiconductor layer is coupled over one of the second semiconductor layers. Two substrates are arranged above one of the buffer layers, and the reflective layer is arranged above one of the second substrates; the structure of the flip chip package and the reflective layer is used to further reduce the volume of the communication chip.
本發明之一實施例中,其中該源極、該汲極以及該閘極各別與該第一基板之間設置一連接件。 In an embodiment of the present invention, a connecting member is respectively disposed between the source electrode, the drain electrode and the gate electrode and the first substrate.
本發明之一實施例中,其中該連接件係錫球或金屬凸塊。 In an embodiment of the present invention, the connecting member is a solder ball or a metal bump.
本發明之一實施例中,其中該第一半導體層之材料以及該第三半導體層之材料係本質氮化鎵。 In one embodiment of the present invention, the material of the first semiconductor layer and the material of the third semiconductor layer are intrinsic gallium nitride.
本發明之一實施例中,其中該第二半導體層之材料係本質氮化鋁鎵。 In one embodiment of the present invention, the material of the second semiconductor layer is intrinsic aluminum gallium nitride.
本發明之一實施例中,其中該第一基板之材料包含氮化鋁。 In an embodiment of the present invention, the material of the first substrate comprises aluminum nitride.
本發明之一實施例中,其中該第二基板之材料包含矽。 In an embodiment of the present invention, the material of the second substrate includes silicon.
本發明之一實施例中,其中該反射層之材料係金屬。 In one embodiment of the present invention, the material of the reflective layer is metal.
本發明之一實施例中,其中該反射層耦接該第一基板之一接地端。 In an embodiment of the present invention, the reflective layer is coupled to a ground terminal of the first substrate.
1:第一基板 1: The first substrate
2:具反射結構之高電子移動率電晶體 2: High electron mobility transistor with reflective structure
3:接地端 3: Ground terminal
10:電極 10: Electrodes
12:源極 12: Source
12’:源極 12': source
14:汲極 14: Drain
14’:汲極 14': Drain
16:閘極 16: Gate
16’:閘極 16': Gate
20:第一半導體層 20: The first semiconductor layer
30:第二半導體層 30: Second semiconductor layer
40:第三半導體層 40: The third semiconductor layer
50:緩衝層 50: Buffer layer
60:第二基板 60: Second substrate
70:反射層 70: Reflective layer
80:連接件 80: Connector
90:線路 90: Line
L:外部光線 L: External light
第1圖:其為本發明之實施例之結構示意圖;第2圖:其為本發明之實施例之光線反射示意圖;第3圖:其為本發明之實施例之第一基板結構示意圖第4圖:其為本發明之實施例之連接件結構示意圖;以及 第5圖:其為習知晶片結構示意圖。 Figure 1: It is a schematic view of the structure of the embodiment of the present invention; Figure 2: It is a schematic view of the light reflection of the embodiment of the present invention; Figure 3: It is a schematic view of the structure of the first substrate of the embodiment of the present invention. Figure: it is a structural schematic diagram of a connector according to an embodiment of the present invention; and FIG. 5 is a schematic diagram of a conventional chip structure.
為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以實施例及配合說明,說明如後:有鑑於上述習知技術之問題,本發明提供將複數個電極各別以連接件耦接於一第一基板之一上方,並利用一反射層設置於複數個半導體層之一上方之晶片結構,利用該反射層反射外部之光線,保護下方之該些個半導體層,以此結構進一步減少晶片之厚度,以及增加晶片整體之壽命,解決習知技術晶片厚度難以減少,且使用壽命較短之問題。 In order to make your examiners have a further understanding and understanding of the features of the present invention and the effects achieved, the following examples are provided and the descriptions are as follows: In view of the above-mentioned problems of the prior art, the present invention provides a plurality of The electrodes are respectively coupled on one of the first substrates by connecting pieces, and a chip structure is arranged above one of the plurality of semiconductor layers by using a reflective layer, and the reflective layer is used to reflect external light to protect the lower ones. The semiconductor layer, with this structure, further reduces the thickness of the chip and increases the lifespan of the entire chip, solving the problems that the conventional technology is difficult to reduce the thickness of the chip and has a short lifespan.
請參閱第1圖,其為本發明之實施例之結構示意圖,如圖所示,本實施例係一種具反射結構之高電子移動率電晶體2,其設置於一第一基板1之一上方,該具反射結構之高電子移動率電晶體2包含,複數個電極10、一第一半導體層20、一第二半導體層30、一第三半導體層40、一緩衝層50、一第二基板60以及一反射層70,其互相疊設形成電晶體結構;於本實施例中,該第一基板1之材料包含氮化鋁(AlN)。
Please refer to FIG. 1 , which is a schematic structural diagram of an embodiment of the present invention. As shown in the figure, the embodiment is a high
再次參閱第1圖以及參閱第2圖,第2圖為本發明之實施例之光線反射示意圖,如圖所示,於本實施例中,該些個電極10包含一源極12(source)、一汲極14(drain)以及一閘極16(gate),該源極12、該汲極14以及該閘極16各別耦接於該第一基板1之該上方,該第一半導體層20耦接於該些個電極10之一上方,即該第一半導體層20耦接於該源極12、該汲極14以及該閘極16之一上方,該第二半導體層30耦接於該第一半導體層20之一上方,該第三半導體層40耦接於該第二半導體層30之一
上方,該緩衝層50耦接於該第三半導體層40之一上方,再將該第二基板60設置於該緩衝層50之一上方,以及將該反射層70設置該第二基板60之一上方,以此互相疊設之結構形成高電子移動率電晶體結構(High electron mobility transistor,HEMT)。
Referring to FIG. 1 and FIG. 2 again, FIG. 2 is a schematic diagram of light reflection according to an embodiment of the present invention. As shown in the figure, in this embodiment, the
接續上述,如圖所示,於本實施例中,該第一半導體層20之材料以及該第三半導體層40之材料係使用本質氮化鎵(i-GaN),該第二半導體層30之材料係使用本質氮化鋁鎵(i-AlGaN),而該第二基板60之材料係包含矽(Si),該反射層70之材料係使用金屬,例如銀(Ag),以反射一外部光線L,防止該些個電極10、該第一半導體層20、該第二半導體層30、該第三半導體層40、該緩衝層50以及該第二基板60受該外部光線L照射,而減少使用壽命。
Continuing the above, as shown in the figure, in this embodiment, the material of the
接續上述,高電子移動率晶體電晶體(High electron mobility transistor,HEMT),或稱調變摻雜場效應管(Modulation-doped FET,MODFET)是場效應電晶體的一種,它使用兩種具有不同能隙的材料形成異質結,為載子提供通道,而不像金屬氧化物半導體場效電晶體那樣,直接使用摻雜的半導體而不是結來形成導電通道;其中,砷化鎵(GaAs)、砷鎵鋁三元化合物半導體是構成這種器件的可選材料,當然根據具體的應用場合,可以有其他多種組合,例如,含銦(In)的器件普遍可表現出較好高頻性能,而氮化鎵(GaN)高電子移動率電晶體則可提供良好的高頻特性,其中,高電子移動率電晶體可以在極高頻下工作,因此在行動電話、衛星電視和雷達中應用廣泛。 Continuing from the above, High electron mobility transistor (HEMT), or Modulation-doped FET (MODFET) is a type of field effect transistor that uses two different The material of the energy gap forms a heterojunction to provide a channel for the carriers, unlike the metal oxide semiconductor field effect transistor, which directly uses a doped semiconductor instead of a junction to form a conductive channel; among them, gallium arsenide (GaAs), Arsenic gallium aluminum ternary compound semiconductor is an optional material for forming this device. Of course, according to the specific application, there can be other combinations. For example, devices containing indium (In) generally show better high-frequency performance, while Gallium Nitride (GaN) High Electron Mobility Transistors (GaN), which can operate at very high frequencies, offer good high-frequency characteristics, making them widely used in mobile phones, satellite TV, and radar.
再次參閱第1圖以及第2圖,如圖所示,於本實施例中,該第一基板1之一上方設置複數個線路90,該些個線路90各別對應耦接該源極12、該汲極14以及該閘極16,以傳輸訊號,更進一步該源極12、該
汲極14以及該閘極16各別與該第一基板1之間設置一連接件80,其中各別之該連接件80係錫球或金屬凸塊,該連接件80係將該具反射結構之高電子移動率電晶體2連接於該第一基板1之元件。
Referring to FIG. 1 and FIG. 2 again, as shown in the figures, in this embodiment, a plurality of
再次參閱第1圖、第2圖以及第3圖,第3圖為本發明之實施例之第一基板結構示意圖,如圖所示,於本實施例中,該第一基板1設置之該些個線路90包含一源極12’、一汲極14’、一閘極16’以及一接地端3,該源極12’、該汲極14’以及該閘極16’以該連接件80耦接該源極12、該汲極14以及該閘極16,該反射層70耦接該接地端3,防止晶片因漏電而損壞。
Referring to FIG. 1, FIG. 2 and FIG. 3 again, FIG. 3 is a schematic diagram of the structure of the first substrate according to the embodiment of the present invention. As shown in the figure, in this embodiment, the
再次參閱第1圖、第2圖、第3圖以及第4圖,第4圖為本發明之實施例之連接件結構示意圖,如圖所示,於本實施例中,該連接件80可使用錫球或金屬凸塊,將該源極12’、該汲極14’以及該閘極16’與該源極12、該汲極14以及該閘極16進行耦接連接。
Referring again to Fig. 1, Fig. 2, Fig. 3 and Fig. 4, Fig. 4 is a schematic diagram of the structure of the connecting member according to the embodiment of the present invention. As shown in the figure, in this embodiment, the connecting
本實施例之一種具反射結構之高電子移動率電晶體2係將該源極12、該汲極14以及該閘極16各別耦接於該第一基板1之該上方,該第一半導體層20耦接於該些個電極10之上方,該第二半導體層30耦接於該第一半導體層20之上方,該第三半導體層40耦接於該第二半導體層30之上方,利用該第一半導體層20與該第三半導體層40產生二維電子氣,進而產生三維之位能井,而該第二半導體層30可侷限其電子通道中之電子氣,該緩衝層50耦接於該第三半導體層40之上方,用於阻止電子移動,防止漏電,該第二基板60設置於該緩衝層50之上方,提供散熱及整體元件支撐,該反射層70設置該第二基板60之上方,以反射該外部光線L,本實施例利用此結合反射層之結構,進一步縮小通訊晶片之體積,並減少外部干擾。
In a high
綜上所述,本發明提供一種具反射結構之高電子移動率電晶體,其係利用複數個電極各別以連接件耦接於基板之一上方,並利用可反射光線反射層設置於複數個半導體層之上方之晶片結構,利用該反射層反射外部之光線,保護下方之該些個半導體層,以此結構進一步減少晶片之厚度,以及增加晶片整體之壽命,以解決習知技術晶片厚度難以減少,且使用壽命較短之問題。 To sum up, the present invention provides a high electron mobility transistor with a reflective structure, which utilizes a plurality of electrodes to be respectively coupled to one of the substrates by connecting elements, and utilizes a reflective light reflective layer disposed on the plurality of substrates. The chip structure above the semiconductor layer uses the reflective layer to reflect external light and protects the semiconductor layers below. This structure further reduces the thickness of the chip and increases the overall life of the chip, so as to solve the difficulty in the thickness of the chip in the prior art. reduction, and the problem of shorter service life.
故本發明實為一具有新穎性、進步性及可供產業上利用者,應符合我國專利法專利申請要件無疑,爰依法提出發明專利申請,祈 鈞局早日賜准專利,至感為禱。 Therefore, the present invention is indeed novel, progressive and available for industrial use, and it should meet the requirements for patent application in my country's patent law.
惟以上所述者,僅為本發明一實施例而已,並非用來限定本發明實施之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。 However, the above is only an embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, all the equivalent changes and modifications made in accordance with the shape, structure, feature and spirit described in the scope of the patent application of the present invention, All should be included in the scope of the patent application of the present invention.
1:第一基板 1: The first substrate
2:具反射結構之高電子移動率電晶體 2: High electron mobility transistor with reflective structure
10:電極 10: Electrodes
12:源極 12: Source
14:汲極 14: Drain
16:閘極 16: Gate
20:第一半導體層 20: The first semiconductor layer
30:第二半導體層 30: Second semiconductor layer
40:第三半導體層 40: The third semiconductor layer
50:緩衝層 50: Buffer layer
60:第二基板 60: Second substrate
70:反射層 70: Reflective layer
80:連接件 80: Connector
90:線路 90: Line
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TW202044355A (en) * | 2019-05-15 | 2020-12-01 | 世界先進積體電路股份有限公司 | Semiconductor device and methods for manufacturing the same |
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