TWI762315B - A kind of preparation method of modified quantum dot and quantum dot masterbatch - Google Patents
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Abstract
本發明公開了一種改性量子點之製備方法,其製備原料包括:量子點、改性劑;所述量子點與改性劑的重量比為1:(2~20);所述改性量子點的量子產率維持率90%;通過與改性劑相互作用,提高了量子點在高分子母粒中的分散性,解決了量子點在高溫製程中量子產率下降的問題;本發明還公開了一種量子點母粒之製備方法,將改性量子點製成母粒,技術簡單,擴大了量子點的應用範圍。 The invention discloses a preparation method of modified quantum dots. The preparation raw materials include: quantum dots and modifier; the weight ratio of the quantum dots to the modifier is 1:(2-20); Quantum Yield Maintenance Rate of Dots 90%; by interacting with the modifier, the dispersibility of the quantum dots in the polymer master batch is improved, and the problem of the quantum yield drop of the quantum dots in the high temperature process is solved; the invention also discloses a quantum dot master batch In the preparation method, the modified quantum dots are made into master batches, the technology is simple, and the application range of the quantum dots is expanded.
Description
本發明涉及量子點技術領域,尤其涉及一種改性量子點、量子點母粒之製備方法。 The invention relates to the technical field of quantum dots, in particular to a method for preparing modified quantum dots and quantum dot master batches.
量子點是一種奈米級別的半導體,通過對這種奈米半導體材料施加一定的電場或光壓,它們便會發出特定頻率的光,由於這種奈米半導體擁有限制電子和電子空穴的特性,類似於自然界中的原子或分子,因而被稱為量子點。將量子點加入高分子材料並進一步製成型材,可用於背光、照明行業等。 Quantum dots are nanoscale semiconductors. By applying a certain electric field or light pressure to the nanosemiconductor material, they will emit light of a specific frequency, due to the properties of this nanosemiconductor that confine electrons and electron holes. , similar to atoms or molecules in nature, so they are called quantum dots. Quantum dots are added to polymer materials and further made into profiles, which can be used in backlight and lighting industries.
用於背光模組的量子點擴散板主要以擠出成型作為量產方式,將高分子母粒與量子點混合擠壓得到板材,其製程溫度約為180~250℃。在量子點擴散板的製程中存在以下困難需要克服,一是如何將量子點均勻分散在高分子母粒中,二是量子點在高溫造粒或擠出製程中會出現量子產率下降。 The quantum dot diffuser used in the backlight module is mainly produced by extrusion molding, and the polymer masterbatch and quantum dots are mixed and extruded to obtain a plate. There are the following difficulties to be overcome in the process of quantum dot diffusion plate, one is how to uniformly disperse the quantum dots in the polymer masterbatch, and the other is that the quantum yield of quantum dots will decrease during the high temperature granulation or extrusion process.
為了解決上述問題,本發明的第一方面提供了一種改性量子點之製備方法,其製備原料包括:量子點、改性劑;所述量子點與改性劑的重量比為1:(2~20);所述改性量子點的量子產率維持率90%;所述改性劑為重均分子量為5,000~100,000的丙烯酸聚合物;所述丙烯酸聚合物的聚合單體選自甲基丙烯酸甲酯、甲基丙烯酸、甲基丙烯酸月桂酯、丙烯酸甲酯、丙烯酸、丙烯酸 丁酯、丙烯酸甲酯、丙烯酸乙酯、丙烯酸異辛酯、甲基丙烯酸乙酯、甲基丙烯酸丁酯中的一種或多種的混合。 In order to solve the above problems, the first aspect of the present invention provides a method for preparing modified quantum dots, the preparation raw materials include: quantum dots and modifier; the weight ratio of the quantum dots to the modifier is 1:(2 ~20); quantum yield maintenance rate of the modified quantum dots 90%; the modifier is an acrylic polymer with a weight average molecular weight of 5,000-100,000; the polymerized monomer of the acrylic polymer is selected from methyl methacrylate, methacrylic acid, lauryl methacrylate, methyl acrylate , a mixture of one or more of acrylic acid, butyl acrylate, methyl acrylate, ethyl acrylate, isooctyl acrylate, ethyl methacrylate, and butyl methacrylate.
作為一種優選的技術方案,所述量子點為由Cd、Zn、Se、S、In、P中的三種組成三元合金材料和/或由Cd、Zn、Se、S、In、P中的四種組成的四元合金材料。 As a preferred technical solution, the quantum dots are ternary alloy materials composed of three kinds of Cd, Zn, Se, S, In, and P and/or four kinds of Cd, Zn, Se, S, In, and P. A quaternary alloy material with various compositions.
本發明的第二方面提供了一種如上所述的改性量子點的製備方法,包括以下步驟:將量子點和改性劑分別溶於良性溶劑中,混合兩種溶液,反應完成後將混合溶液加入不良溶劑中,沉澱析出,去除溶劑,烘乾沉澱,粉碎,即得。 The second aspect of the present invention provides a method for preparing the modified quantum dots as described above, comprising the following steps: dissolving the quantum dots and the modifier in a benign solvent, mixing the two solutions, and after the reaction is completed, the mixed solution is Add in poor solvent, precipitate out, remove the solvent, dry the precipitate, and pulverize it.
作為一種優選的技術方案,所述量子點與溶解量子點的良性溶劑的重量比為1:(4~5);所述改性劑溶於良性溶劑後的濃度為20~40wt%。 As a preferred technical solution, the weight ratio of the quantum dots to the benign solvent for dissolving the quantum dots is 1:(4~5); the concentration of the modifier dissolved in the benign solvent is 20~40wt%.
本發明的協力廠商面提供了一種量子點母粒之製備方法,其製備原料包括:如上所述的改性量子點1~5wt%、芳香族化合物0.5~20wt%,餘量為樹脂。 The third-party manufacturer of the present invention provides a method for preparing quantum dot masterbatch.
作為一種優選的技術方案,所述樹脂選自烯丙基二甘醇二碳酸酯、聚甲基丙烯酸甲酯、聚苯乙烯、聚碳酸酯、聚4-甲基1-戊烯、苯乙烯-丙烯腈共聚物、聚甲基丙烯酸甲酯-苯乙烯共聚物、環烯烴聚合物中的一種或多種的混合。 As a preferred technical solution, the resin is selected from allyl diethylene glycol dicarbonate, polymethyl methacrylate, polystyrene, polycarbonate, poly-4-methyl-1-pentene, styrene- A mixture of one or more of acrylonitrile copolymer, polymethyl methacrylate-styrene copolymer, and cycloolefin polymer.
作為一種優選的技術方案,所述芳香族化合物選自1,3,5-三(4-叔丁基-3-羥基-2,6-二甲基苄基)-1,3,5-三嗪-2,4,6-(1H,3H,5H)-三酮、1,3,5-三(3,5-二叔丁基-4-羥基苄基)異氰尿酸、β-(3,5-二叔丁基-4-羥基苯基)丙酸異辛醇酯、β-(3,5-二叔丁基-4-羥基苯基)丙酸十八醇酯、1,3,5-三甲基-2,4,6-(3,5-二叔丁基-4-羥基苯甲基)苯、四[β-(3,5-二叔丁基-4-羥基苯基)丙酸]季戊四醇酯、三[2,4-二叔丁基苯基]亞磷酸酯中的一種或多種的混合。 As a preferred technical solution, the aromatic compound is selected from 1,3,5-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-tris Azine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid, β- (3 , 5-di-tert-butyl-4-hydroxyphenyl) propionate isooctyl ester, β- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate octadecyl ester, 1,3, 5-trimethyl-2,4,6-(3,5-di-tert-butyl-4-hydroxybenzyl)benzene, tetrakis[beta-(3,5-di-tert-butyl-4-hydroxyphenyl) ) propionate] pentaerythritol ester, tris [2,4-di-tert-butylphenyl] phosphite in one or more mixtures.
本發明的第四方面提供了一種如上所述的量子點母粒的製備方法,包括以下步驟:將改性量子點、芳香族化合物、樹脂混合,擠出造粒,製程溫度為150~250℃。 The fourth aspect of the present invention provides a method for preparing quantum dot masterbatches as described above, comprising the following steps: mixing modified quantum dots, aromatic compounds and resins, extruding and granulating, and the process temperature is 150-250° C. .
有益效果:本發明提供了一種改性量子點之製備方法,通過與改性劑相互作用,提高了量子點在高分子母粒中的分散性,解決了量子點在高溫製程中量子產率下降的問題;本發明還提供了一種量子點母粒之製備方法,將改性量子點製成母粒,技術簡單,擴大了量子點的應用範圍。 Beneficial effects: The present invention provides a method for preparing modified quantum dots. By interacting with modifiers, the dispersibility of quantum dots in polymer master batches is improved, and the quantum yield decline of quantum dots in high temperature process is solved. The present invention also provides a preparation method of quantum dot master batch, the modified quantum dot is made into master batch, the technology is simple, and the application range of quantum dot is expanded.
圖1為本發明改性劑的作用機理示意圖。 Figure 1 is a schematic diagram of the action mechanism of the modifier of the present invention.
圖2為本發明實施例3的技術示意圖。 FIG. 2 is a technical schematic diagram of Embodiment 3 of the present invention.
圖3為本發明實施例3的樣品圖。 FIG. 3 is a sample diagram of Example 3 of the present invention.
結合以下本發明的優選實施方法的詳述以及包括的實施例可進一步地理解本發明的內容。除非另有說明,本文中使用的所有技術及科學術語均具有與本申請所屬領域普通技術人員的通常理解相同的含義。如果現有技術中披露的具體術語的定義與本申請中提供的任何定義不一致,則以本申請中提供的術語定義為准。 The content of the present invention can be further understood in conjunction with the following detailed description of the preferred embodiments of the present invention and the included examples. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. To the extent that definitions of specific terms disclosed in the prior art are inconsistent with any definitions provided in this application, the definitions of terms provided in this application shall control.
在本文中使用的,除非上下文中明確地另有指示,否則沒有限定單複數形式的特徵也意在包括複數形式的特徵。還應理解的是,如本文所用術語“由…製備”與“包含”同義,“包括”、“包括有”、“具有”、“包含”和/或“包含有”,當在本說明書中使用時表示所陳述的組合物、步驟、方法、 製品或裝置,但不排除存在或添加一個或多個其它組合物、步驟、方法、製品或裝置。此外,當描述本申請的實施方式時,使用“優選的”、“優選地”、“更優選的”等是指,在某些情況下可提供某些有益效果的本發明實施方案。然而,在相同的情況下或其他情況下,其他實施方案也可能是優選的。除此之外,對一個或多個優選實施方案的表述並不暗示其他實施方案不可用,也並非旨在將其他實施方案排除在本發明的範圍之外。 As used herein, features in the singular and plural are not intended to include features in the plural unless the context clearly dictates otherwise. It is also to be understood that the term "prepared from" as used herein is synonymous with "comprising" and that "comprising", "including", "having", "comprising" and/or "comprising" when used in this specification used to mean the stated compositions, steps, methods, article or device, but does not preclude the presence or addition of one or more other compositions, steps, methods, articles or devices. Furthermore, the use of "preferred," "preferably," "more preferred," etc. when describing embodiments of the present application refers to embodiments of the invention that, under certain circumstances, may provide certain benefits. However, other embodiments may also be preferred, under the same or other circumstances. In addition, the recitation of one or more preferred embodiments does not imply that other embodiments are not available, nor is it intended to exclude other embodiments from the scope of the present invention.
本文中的術語“量子產率”是指在光化學反應中光量子的利用率,具體地,一個光化學反應的量子產率可以定義為每吸收一個量子所產生的反應物的分子數,這通常是對於特定的波長而言,即量子產率=(生成產物的分子數)/(吸收的量子數)。 The term "quantum yield" as used herein refers to the utilization rate of light quantum in a photochemical reaction. Specifically, the quantum yield of a photochemical reaction can be defined as the number of molecules of reactant produced per absorption of one quantum, which is usually is for a specific wavelength, that is, quantum yield = (number of molecules generated product) / (quantum number of absorbed).
本文中的術語“量子產率維持率”是指改性後或製程後量子點的量子產率與改性前或製程前量子點的量子產率的百分比。 The term "quantum yield maintenance" herein refers to the percentage of the quantum yield of the quantum dots after modification or processing to the quantum yield of the quantum dots before modification or processing.
為了解決上述問題,本發明的第一方面提供了一種改性量子點之製備方法,其製備原料包括:量子點、改性劑;所述量子點與改性劑的重量比為1:(2~20);所述改性量子點的量子產率維持率90%;所述改性劑為重均分子量為5,000~100,000的丙烯酸聚合物;所述丙烯酸聚合物的聚合單體選自甲基丙烯酸甲酯、甲基丙烯酸、甲基丙烯酸月桂酯、丙烯酸甲酯、丙烯酸、丙烯酸丁酯、丙烯酸甲酯、丙烯酸乙酯、丙烯酸異辛酯、甲基丙烯酸乙酯、甲基丙烯酸丁酯中的一種或多種的混合。 In order to solve the above problems, the first aspect of the present invention provides a method for preparing modified quantum dots, the preparation raw materials include: quantum dots and modifier; the weight ratio of the quantum dots to the modifier is 1:(2 ~20); quantum yield maintenance rate of the modified quantum dots 90%; the modifier is an acrylic polymer with a weight average molecular weight of 5,000-100,000; the polymerized monomer of the acrylic polymer is selected from methyl methacrylate, methacrylic acid, lauryl methacrylate, methyl acrylate , a mixture of one or more of acrylic acid, butyl acrylate, methyl acrylate, ethyl acrylate, isooctyl acrylate, ethyl methacrylate, and butyl methacrylate.
在一些優選的實施方式中,所述量子點與改性劑的重量比為1:(2.2~18);進一步優選的,所述量子點與改性劑的重量比為1:(2.4~16);更進一步的,所述量子點與改性劑的重量比為1:(3~12)。 In some preferred embodiments, the weight ratio of the quantum dots to the modifier is 1:(2.2~18); further preferably, the weight ratio of the quantum dots to the modifier is 1:(2.4~16 ); further, the weight ratio of the quantum dots to the modifier is 1:(3~12).
在一些優選的實施方式中,所述量子點為由Cd、Zn、Se、S、In、P中的三種組成三元合金材料和/或由Cd、Zn、Se、S、In、P中的四種組成的四 元合金材料;進一步優選的,所述量子點選自CdZnSeS、CdZnSe、CdZnS、InZnP中的一種或多種的混合。 In some preferred embodiments, the quantum dots are ternary alloy materials composed of three of Cd, Zn, Se, S, In, P and/or composed of Cd, Zn, Se, S, In, P four made up of four Element alloy material; further preferably, the quantum dots are selected from a mixture of one or more of CdZnSeS, CdZnSe, CdZnS, and InZnP.
在一些優選的實施方式中,所述量子點的粒徑10nm。 In some preferred embodiments, the particle size of the quantum dots 10nm.
本發明中的量子點可為市售,本領域量子點的製備方法可分為三類:化學溶液生長法、外延生長法、電場約束法。發明人發現使用化學溶液生長法製得的量子點效果較好,其原因在於,此類量子點在合成過程中通過加入配體或螯合劑確保粒徑控制並保護量子點,這種方式利於選擇粒徑分佈較窄的量子點,提高量子產率穩定性。此外,發明人還發現,採用特定粒徑的三元或四元合金材料作為量子點,使得量子點具有優異的光學特性與量子產率,且耐熱性有所提高,其原因在於,三元、四元合金材料的結構存在梯度,其缺陷狀態對耐熱性有所影響,配合大於10nm的粒徑,材料的耐熱性進一步提高,熱回復性增強,更適於製作母粒、擴散板等。 The quantum dots in the present invention can be commercially available, and the preparation methods of quantum dots in the art can be divided into three categories: chemical solution growth method, epitaxial growth method, and electric field confinement method. The inventors found that the quantum dots prepared by the chemical solution growth method have better effect. Quantum dots with narrower diameter distribution can improve the stability of quantum yield. In addition, the inventor also found that the use of ternary or quaternary alloy materials with specific particle sizes as quantum dots makes quantum dots have excellent optical properties and quantum yield, and the heat resistance is improved. The reason is that the ternary, The structure of the quaternary alloy material has a gradient, and its defect state has an impact on the heat resistance. With the particle size larger than 10nm, the heat resistance of the material is further improved, and the heat recovery is enhanced, and it is more suitable for making masterbatches, diffusion plates, etc.
在一些優選的實施方式中,所述改性劑為重均分子量為8,000~80,000的丙烯酸聚合物;進一步優選的,所述改性劑為重均分子量為10,000~70,000的丙烯酸聚合物。 In some preferred embodiments, the modifier is an acrylic polymer with a weight average molecular weight of 8,000-80,000; further preferably, the modifier is an acrylic polymer with a weight average molecular weight of 10,000-70,000.
在一些優選的實施方式中,所述丙烯酸聚合物的聚合單體選自甲基丙烯酸甲酯、甲基丙烯酸、甲基丙烯酸月桂酯、丙烯酸甲酯、丙烯酸、丙烯酸丁酯中的一種或多種的混合;進一步優選的,所述丙烯酸聚合物的聚合單體選自甲基丙烯酸甲酯、甲基丙烯酸、甲基丙烯酸月桂酯、丙烯酸甲酯中的一種或多種的混合。 In some preferred embodiments, the polymerized monomer of the acrylic polymer is selected from one or more of methyl methacrylate, methacrylic acid, lauryl methacrylate, methyl acrylate, acrylic acid, and butyl acrylate Mixing; further preferably, the polymerized monomer of the acrylic polymer is selected from a mixture of one or more of methyl methacrylate, methacrylic acid, lauryl methacrylate, and methyl acrylate.
在一些優選的實施方式中,所述改性劑選自甲基丙烯酸甲酯-甲基丙烯酸月桂酯-甲基丙烯酸共聚物(P(MMA-co-LMA-co-MAA),重量平均分子量Mw~36000,單體mole組成49.4%、44.4%、6.2%))、甲基丙烯酸甲酯-甲基丙烯酸共聚物(P(MMA-co-MAA),重量平均分子量Mw~34000,單體mole組成比1:0.016)中的一 種或多種的混合。 In some preferred embodiments, the modifier is selected from methyl methacrylate-lauryl methacrylate-methacrylic acid copolymer (P(MMA-co-LMA-co-MAA), weight average molecular weight Mw ~36000, monomer mole composition 49.4%, 44.4%, 6.2%)), methyl methacrylate-methacrylic acid copolymer (P(MMA-co-MAA), weight average molecular weight Mw~34000, monomer mole composition ratio 1: 0.016) of one a mixture of one or more.
本發明中所述共聚物的製備方法可為本領域技術人員熟知的任何一種,例如乳液聚合法、溶液聚合法、懸浮聚合法等。 The preparation method of the copolymer in the present invention can be any one well known to those skilled in the art, such as emulsion polymerization, solution polymerization, suspension polymerization and the like.
發明人在研究中發現,採用恰當的改性劑可以改變量子點的表面性質,其結構中的官能團與量子點表面的配體進行交換,與量子點牢牢鍵結,主鏈一方面與溶劑或樹脂基材相容,另一方面在量子點周圍形成立體障礙,避免量子點聚集,改善量子點的分散性,且改性劑可以在不良溶劑中與量子點沉澱析出,提高改性量子點的產率和性能,且不影響量子點的光學性能。圖1為本發明改性劑的作用機理示意圖。 In the research, the inventor found that the surface properties of quantum dots can be changed by using appropriate modifiers. The functional groups in the structure are exchanged with the ligands on the surface of the quantum dots and are firmly bonded to the quantum dots. On the one hand, the main chain is connected with the solvent. Or the resin substrate is compatible, on the other hand, it forms a three-dimensional barrier around the quantum dots, avoids the aggregation of quantum dots, improves the dispersibility of quantum dots, and the modifier can precipitate with quantum dots in poor solvents, improving the modification of quantum dots. yield and performance without affecting the optical properties of quantum dots. Figure 1 is a schematic diagram of the action mechanism of the modifier of the present invention.
本發明的第二方面提供了一種如上所述的改性量子點的製備方法,包括以下步驟:將量子點和改性劑分別溶於良性溶劑中,混合兩種溶液,反應完成後將混合溶液加入不良溶劑中,沉澱析出,去除溶劑,烘乾沉澱,粉碎,即得。 The second aspect of the present invention provides a method for preparing the modified quantum dots as described above, comprising the following steps: dissolving the quantum dots and the modifier in a benign solvent, mixing the two solutions, and after the reaction is completed, the mixed solution is Add in poor solvent, precipitate out, remove the solvent, dry the precipitate, and pulverize it.
在一些優選的實施方式中,所述量子點與溶解量子點的良性溶劑的重量比為1:(4~5);所述改性劑溶於良性溶劑後的濃度為20~40wt%。 In some preferred embodiments, the weight ratio of the quantum dots to the benign solvent for dissolving the quantum dots is 1:(4~5); the concentration of the modifier dissolved in the benign solvent is 20~40wt%.
在一些優選的實施方式中,所述良性溶劑選自甲苯、乙醇、乙醚、丙酮、醋酸、氯仿中的一種或多種的混合;進一步優選的,所述良性溶劑為甲苯。 In some preferred embodiments, the benign solvent is selected from a mixture of one or more of toluene, ethanol, ether, acetone, acetic acid, and chloroform; further preferably, the benign solvent is toluene.
在一些優選的實施方式中,所述不良溶劑選自正己烷、正辛烷、環己烷中的一種或多種的混合;進一步優選的,所述不良溶劑為正己烷。 In some preferred embodiments, the poor solvent is selected from a mixture of one or more of n-hexane, n-octane, and cyclohexane; further preferably, the poor solvent is n-hexane.
在一些優選的實施方式中,所述量子點和改性劑溶液的重量比為1:(4.5~15);進一步優選的,所述量子點和改性劑溶液的重量比為1:(5~12)。 In some preferred embodiments, the weight ratio of the quantum dots to the modifier solution is 1:(4.5~15); further preferably, the weight ratio of the quantum dots to the modifier solution is 1:(5 ~12).
在一些優選的實施方式中,所述量子點和不良溶劑的重量比為1:(40~70);進一步優選的,所述量子點和不良溶劑的重量比為1:(50~68); 更進一步的,所述量子點和不良溶劑的重量比為1:(55~65)。 In some preferred embodiments, the weight ratio of the quantum dots to the poor solvent is 1:(40~70); further preferably, the weight ratio of the quantum dots to the poor solvent is 1:(50~68); Further, the weight ratio of the quantum dots to the poor solvent is 1:(55~65).
在一些優選的實施方式中,所述改性量子點的製備方法包括以下步驟:稱取20~40克量子點,加入100~150克甲苯,攪拌加熱至40~60℃,將300~380克改性劑甲苯溶液(濃度為20~40wt%)滴入量子點溶液中,保溫1~5天後,冷卻至室溫;將上述混合溶液加入1,000~2,000克正己烷中,沉澱析出,去除溶劑,40~60℃真空烘乾沉澱,粉碎至粉體尺寸達到微米等級或毫米等級,即得。 In some preferred embodiments, the preparation method of the modified quantum dots includes the following steps: weighing 20-40 grams of quantum dots, adding 100-150 grams of toluene, stirring and heating to 40-60° C., adding 300-380 grams of The modifier toluene solution (concentration is 20~40wt%) is dropped into the quantum dot solution, and after being incubated for 1~5 days, it is cooled to room temperature; the above mixed solution is added to 1,000~2,000 grams of n-hexane, precipitated out, and the solvent is removed , 40 ~ 60 ℃ vacuum drying precipitation, pulverized until the powder size reaches the micron level or millimeter level, that is, it is obtained.
在一些優選的實施方式中,所述改性量子點的製備方法的產率不低於88%。 In some preferred embodiments, the yield of the method for preparing modified quantum dots is not less than 88%.
本發明的協力廠商面提供了一種量子點母粒,其製備原料包括:如上所述的改性量子點1~5wt%、芳香族化合物0.5~20wt%,餘量為樹脂。 The third-party manufacturer of the present invention provides a quantum dot masterbatch, and the preparation raw materials include: 1-5wt% of the modified quantum dots described above, 0.5-20wt% of an aromatic compound, and the remainder is resin.
在一些優選的實施方式中,所述樹脂選自烯丙基二甘醇二碳酸酯、聚甲基丙烯酸甲酯、聚苯乙烯、聚碳酸酯、聚4-甲基1-戊烯、苯乙烯-丙烯腈共聚物、聚甲基丙烯酸甲酯-苯乙烯共聚物、環烯烴聚合物中的一種或多種的混合;進一步優選的,所述樹脂選自聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯(PS)、聚碳酸酯(PC)中的一種或多種的混合。 In some preferred embodiments, the resin is selected from the group consisting of allyl diethylene glycol dicarbonate, polymethyl methacrylate, polystyrene, polycarbonate, poly-4-methyl-1-pentene, styrene - a mixture of one or more of acrylonitrile copolymer, polymethyl methacrylate-styrene copolymer, and cycloolefin polymer; further preferably, the resin is selected from polymethyl methacrylate (PMMA), polymethyl methacrylate (PMMA), A mixture of one or more of styrene (PS) and polycarbonate (PC).
本發明中的改性量子點用於製備光學材料,與傳統無機光學材料相比,光學高分子材料具有密度小、耐衝擊、成本低、易加工等優點,近年來得到了廣泛的應用。本發明中的聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯(PS)、聚碳酸酯(PC)可為市售原料。 The modified quantum dots in the present invention are used to prepare optical materials. Compared with traditional inorganic optical materials, optical polymer materials have the advantages of low density, impact resistance, low cost, easy processing and the like, and have been widely used in recent years. In the present invention, polymethyl methacrylate (PMMA), polystyrene (PS), and polycarbonate (PC) may be commercially available raw materials.
在一些優選的實施方式中,所述芳香族化合物選自1,3,5-三(4-叔丁基-3-羥基-2,6-二甲基苄基)-1,3,5-三嗪-2,4,6-(1H,3H,5H)-三酮(CAS號:40601-76-1)、1,3,5-三(3,5-二叔丁基-4-羥基苄基)異氰尿酸(CAS號:27676-62-6)、β-(3,5-二叔丁基-4-羥基苯基)丙酸異辛醇酯(CAS號: 125643-61-0)、β-(3,5-二叔丁基-4-羥基苯基)丙酸十八醇酯(CAS號:2082-79-3)、1,3,5-三甲基-2,4,6-(3,5-二叔丁基-4-羥基苯甲基)苯(CAS號:1709-70-2)、四[β-(3,5-二叔丁基-4-羥基苯基)丙酸]季戊四醇酯(CAS號:6683-19-8)、三[2,4-二叔丁基苯基]亞磷酸酯(CAS號:31570-04-4)中的一種或多種的混合。 In some preferred embodiments, the aromatic compound is selected from 1,3,5-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5- Triazine-2,4,6-(1H,3H,5H)-trione (CAS No.: 40601-76-1), 1,3,5-tris(3,5-di-tert-butyl-4-hydroxyl) Benzyl) isocyanuric acid (CAS number: 27676-62-6), β- (3,5-di-tert-butyl-4-hydroxyphenyl) isooctyl propionate (CAS number: 125643-61-0 ), β- (3,5-di-tert-butyl-4-hydroxyphenyl) octadecyl propionate (CAS number: 2082-79-3), 1,3,5-trimethyl-2,4 ,6-(3,5-di-tert-butyl-4-hydroxybenzyl)benzene (CAS No.: 1709-70-2), tetrakis[β-(3,5-di-tert-butyl-4-hydroxybenzene) one or more of tris[2,4-di-tert-butylphenyl]phosphite (CAS number: 31570-04-4) mix.
發明人在研究中發現,在量子點母粒中引入芳香族化合物,能夠提高母粒在製程中出現的量子產率下降問題,其原因在於,芳香族化合物可以將體系中因熱分解產生的高能量自由基轉變成低能量的芳香族自由基,抑制破壞性的氧化反應繼續進行,苯環中的共軛結構還可吸收紫外線,避免量子點出現劣化、母粒變色黃化等現象,此外還可以引入硫、磷等元素,使高溫時產生的氧化性自由基被迅速破壞。在對芳香族化合物進行選擇時,需注意選用受熱前後均不影響產品光學特性的種類。 The inventor found in the research that the introduction of aromatic compounds into the quantum dot masterbatch can improve the quantum yield drop problem of the masterbatch in the process. The energy free radicals are converted into low-energy aromatic free radicals, which inhibit the destructive oxidation reaction from continuing. The conjugated structure in the benzene ring can also absorb ultraviolet rays, avoiding the deterioration of quantum dots and the discoloration and yellowing of masterbatches. Elements such as sulfur and phosphorus can be introduced, so that the oxidative free radicals generated at high temperature are rapidly destroyed. When choosing an aromatic compound, it should be noted that the type that does not affect the optical properties of the product before and after heating.
本發明的第四方面提供了一種如上所述的量子點母粒的製備方法,包括以下步驟:將改性量子點、芳香族化合物、樹脂混合,擠出造粒,製程溫度為150~250℃。 The fourth aspect of the present invention provides a method for preparing quantum dot masterbatches as described above, comprising the following steps: mixing modified quantum dots, aromatic compounds and resins, extruding and granulating, and the process temperature is 150-250° C. .
在一些優選的實施方式中,所述量子點母粒的製備方法包括以下步驟:將改性量子點及芳香族化合物混合,再與樹脂混合均勻後,加入擠出機進料漏斗,進料溫度為200~240℃,出料溫度為180~220℃,水冷,切粒,乾燥,即得。 In some preferred embodiments, the preparation method of the quantum dot masterbatch includes the following steps: mixing the modified quantum dots and the aromatic compound, and then mixing with the resin uniformly, adding the extruder to the feed funnel, and the feeding temperature It is 200~240℃, the discharge temperature is 180~220℃, water-cooled, diced, and dried.
實施例 Example
以下通過實施例對本發明技術方案進行詳細說明,但是本發明的保護範圍不局限於所述實施例。本申請中所用原料,如無特殊說明,均為市售。 The technical solutions of the present invention will be described in detail below through the examples, but the protection scope of the present invention is not limited to the examples. The raw materials used in this application are commercially available unless otherwise specified.
實施例1 Example 1
實施例1提供了一種改性量子點之製備方法,其製備方法如下所 述:稱取30g量子點於1L錐形瓶中,加入120g甲苯,攪拌加熱至50℃,將360g改性劑甲苯溶液(濃度為33.33wt%)滴入上述錐形瓶中,保溫2天後,冷卻至室溫;將上述混合溶液加入1,600g正己烷中,沉澱析出,去除溶劑,50℃真空烘乾沉澱,粉碎至粉體尺寸達到毫米等級,得到135g改性量子點,產率>99%。 Embodiment 1 provides a kind of preparation method of modified quantum dots, and its preparation method is as follows: Description: Weigh 30g of quantum dots in a 1L conical flask, add 120g of toluene, stir and heat to 50°C, drop 360g of modifier toluene solution (with a concentration of 33.33wt%) into the above-mentioned conical flask, keep warm for 2 days , cooled to room temperature; added the above mixed solution to 1,600g of n-hexane, precipitated out, removed the solvent, dried the precipitation in a vacuum at 50°C, and pulverized until the powder size reached the millimeter level to obtain 135g of modified quantum dots with a yield of >99 %.
所述量子點為CdZnSeS,本實施例分別改性了綠色CdZnSeS(粒徑12nm)和紅色CdZnSeS(粒徑14nm);所述改性劑為PMMA-LMA-MAA共聚物,重均分子量為36000。 The quantum dots are CdZnSeS. In this example, green CdZnSeS (particle size 12 nm) and red CdZnSeS (particle size 14 nm) are modified respectively; the modifier is PMMA-LMA-MAA copolymer, and the weight average molecular weight is 36000.
取少量未改性量子點及改性量子點樣品溶於甲苯,測量兩者的量子產率(Quantum yield,QY)、發光波長(λ)及半峰寬(FWHM),結果見表1。QY量測試結果發現,改性綠色CdZnSeS的QY為85%,比未改性綠色CdZnSeS(88%)下降約3%;改性紅色CdZnSeS的QY為85%,與未改性紅色CdZnSeS(85%)相比,沒有下降。此外,改性量子點的發光峰值(PL peak)顯示峰值紅移量小於1~3nm,證實改性量子點有良好的分散狀態(一般若量子點未分散,紅移量會大於5~15nm)。 A small amount of unmodified quantum dots and modified quantum dot samples were dissolved in toluene, and their quantum yield (QY), emission wavelength (λ) and half-peak width (FWHM) were measured. The results are shown in Table 1. The QY quantity test results found that the QY of the modified green CdZnSeS is 85%, which is about 3% lower than that of the unmodified green CdZnSeS (88%); the QY of the modified red CdZnSeS is 85%, which is comparable to that of the unmodified red CdZnSeS (85%). ) did not decrease. In addition, the luminescence peak (PL peak) of the modified quantum dots shows that the peak red shift is less than 1-3 nm, which confirms that the modified quantum dots have a good dispersion state (generally, if the quantum dots are not dispersed, the red shift will be greater than 5-15 nm). .
實施例2 Example 2
實施例2提供了一種量子點母粒之製備方法,其製備方法如下所 述:稱取50g實施例1中製得的改性量子點與3,950g聚苯乙烯(奇美PH-88)混合均勻後,加入擠出機進料漏斗,進料溫度為220℃,出料溫度為200℃,水冷,切粒,乾燥,即得。所述實施例1中製得的改性量子點分別為改性紅色CdZnSeS和改性綠色CdZnSeS。 Embodiment 2 provides a kind of preparation method of quantum dot master batch, and its preparation method is as follows: Description: Weigh 50g of modified quantum dots prepared in Example 1 and 3,950g of polystyrene (Chi Mei PH-88) and mix them evenly, then add to the extruder feed funnel, the feed temperature is 220°C, and the discharge temperature 200 ° C, water cooling, dicing, drying, that is, it is obtained. The modified quantum dots prepared in Example 1 are respectively modified red CdZnSeS and modified green CdZnSeS.
取少量量子點母粒溶於甲苯,測量量子產率(Quantum yield,QY)、發光波長(λ)及半峰寬(FWHM),將所得資料與改性量子點對比,結果見表2。QY量測試結果發現,量子產率在造粒後有顯著的下降,紅色改性量子點的QY由85%掉至61%,綠色改性量子點的QY由85%掉至40%,這主要是受到造粒過程中的高溫氧化影響。此外,改性量子點的發光峰值(PL peak)顯示峰值紅移量小於1~3nm。 Take a small amount of quantum dot masterbatch and dissolve it in toluene, measure quantum yield (Quantum yield, QY), emission wavelength (λ) and half-peak width (FWHM), and compare the obtained data with the modified quantum dots. The results are shown in Table 2. The results of the QY quantity test found that the quantum yield decreased significantly after granulation. The QY of the red modified quantum dots dropped from 85% to 61%, and the QY of the green modified quantum dots dropped from 85% to 40%. It is affected by high temperature oxidation during the granulation process. In addition, the luminescence peak (PL peak) of the modified quantum dots shows that the peak red shift is less than 1~3 nm.
實施例3 Example 3
實施例3提供了一種量子點母粒,其製備方法如下所述:將實施例1中製得的改性量子點及芳香族化合物混合,再與聚苯乙烯(奇美PH-88)混合均勻後,加入擠出機進料漏斗,進料溫度為220℃,出料溫度為200℃,水冷,切粒,乾燥,即得。本實施例分別製備了含有一種芳香族化合物的母粒及含有兩種芳香族化合物的母粒,各母粒的原料用量見表3。 Embodiment 3 provides a quantum dot masterbatch, and its preparation method is as follows: mixing the modified quantum dots and aromatic compounds obtained in embodiment 1, and then mixing with polystyrene (Chi Mei PH-88) uniformly. , into the extruder feeding funnel, the feeding temperature is 220 ° C, the discharging temperature is 200 ° C, water cooling, dicing, drying, that is, it is obtained. In this example, a master batch containing one aromatic compound and a master batch containing two aromatic compounds were prepared respectively, and the raw material consumption of each master batch is shown in Table 3.
所述實施例1中製得的改性量子點分別為改性紅色CdZnSeS和改 性綠色CdZnSeS;所述芳香族化合物為四[β-(3,5-二叔丁基-4-羥基苯基)丙酸]季戊四醇酯(CAS號:6683-19-8)和/或三[2,4-二叔丁基苯基]亞磷酸酯(CAS號:31570-04-4)。 The modified quantum dots prepared in the embodiment 1 are respectively modified red CdZnSeS and modified red CdZnSeS. green CdZnSeS; the aromatic compound is tetrakis[beta-(3,5-di-tert-butyl-4-hydroxyphenyl)propionic acid]pentaerythritol ester (CAS number: 6683-19-8) and/or tri[ 2,4-Di-tert-butylphenyl]phosphite (CAS number: 31570-04-4).
取本實施例中少量量子點母粒溶於甲苯,測量量子產率(Quantum yield,QY)、發光波長(λ)及半峰寬(FWHM),將所得資料與實施例2對比,結果見表3。根據測試結果可以得知,含有兩種芳香族化合物的母粒效果最佳,可使綠色量子點的量子產率維持率(EQY/AQY)由0.45提升至0.74,紅色量子點的量子產率由0.72提升至0.94。圖3為不含芳香族化合物、含改性紅色CdZnSeS的母粒(左上)、含芳香族化合物和改性紅色CdZnSeS的母粒(右上)、不含芳香族化合物、含改性綠色CdZnSeS的母粒(左下)、含芳香族化合物和改性綠色CdZnSeS的母粒(右下)的樣品圖,由量子點母粒外觀可觀察到添加芳香族化合物的量子點母粒顯現出較明亮的螢光色。 Get a small amount of quantum dot master batch and be dissolved in toluene in the present embodiment, measure quantum yield (Quantum yield, QY), luminescence wavelength (λ) and half-peak width (FWHM), the obtained data is compared with Example 2, the results are shown in the table 3. According to the test results, it can be seen that the masterbatch containing two aromatic compounds has the best effect, which can increase the quantum yield retention ratio (EQY/AQY) of green quantum dots from 0.45 to 0.74, and the quantum yield of red quantum dots from 0.45 to 0.74. 0.72 increased to 0.94. Figure 3 shows the masterbatch containing no aromatic compounds and modified red CdZnSeS (top left), the masterbatch containing aromatic compounds and modified red CdZnSeS (top right), and the masterbatch containing no aromatic compounds and modified green CdZnSeS Sample images of the masterbatch (bottom left) and the masterbatch containing aromatic compounds and modified green CdZnSeS (bottom right), from the appearance of the quantum dot masterbatch, it can be observed that the quantum dot masterbatch added with aromatic compounds shows brighter fluorescence color.
最後指出,以上所述僅為本發明的較佳實施例而已,並不用以限制本發明,凡在本發明的精神和原則之內所作的任何修改、等同替換和改進等,均應包含在本發明的保護範圍之內。 Finally, it is pointed out that the above descriptions are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included in the present invention. within the scope of protection of the invention.
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