TWI756984B - Operation method of lithography machine - Google Patents

Operation method of lithography machine Download PDF

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TWI756984B
TWI756984B TW109144130A TW109144130A TWI756984B TW I756984 B TWI756984 B TW I756984B TW 109144130 A TW109144130 A TW 109144130A TW 109144130 A TW109144130 A TW 109144130A TW I756984 B TWI756984 B TW I756984B
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exposure
area
areas
layer
mode
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TW109144130A
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TW202223544A (en
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王承宏
徐嘉祥
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南亞科技股份有限公司
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Priority to CN202110306971.9A priority patent/CN114624961A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Abstract

An operation method of lithography machine includes performing exposing on a first layer of a wafer, and the step of exposing is sequentially performed on a plurality of first exposing regions covering the first layer; performing exposing on a second layer of a wafer, and the step of exposing is sequentially performed on a plurality of second exposing regions covering the second layer; and performing exposing on a third exposing region covering the wafer, and the amount of exposure energy corresponding to the third exposing region is zero.

Description

曝光機的操作方法How to operate the exposure machine

本揭露是有關於一種曝光機的操作方法。 The present disclosure relates to an operation method of an exposure machine.

現行的曝光機大多具有固定的曝光方式，曝光的上下掃描曝光方向無法讓使用者自行定義或調整。然而，當晶圓的不同疊層個別透過不同機型的曝光機進行曝光時，會因為對應的曝光區域之間的掃描方向不同而導致對應區域上圖案的疊對誤差。 Most of the current exposure machines have a fixed exposure mode, and the exposure direction of the up and down scanning exposure cannot be defined or adjusted by the user. However, when different stacks of wafers are individually exposed by exposure machines of different models, the alignment error of the patterns on the corresponding regions will be caused due to the different scanning directions between the corresponding exposure regions.

有鑑於此，如何提供一種可以讓不同疊層中對應的曝光區域的掃描方向一致的曝光機操作方法，仍是目前須研究的方向之一。 In view of this, how to provide an exposure machine operation method that can make the scanning directions of the corresponding exposure areas in different stacks consistent is still one of the directions to be researched at present.

本揭露之一技術態樣為一種曝光機的操作方法。 One technical aspect of the present disclosure is an operating method of an exposure machine.

在一些實施例中，一種曝光機的操作方法包括執行曝光於晶圓的第一層上，其中曝光之步驟依序地執行於覆蓋第一層的複數個第一曝光區域上；執行曝光於晶圓的第二層上，其中第二層在該第一層上，曝光之步驟依序地執行於覆蓋第一層的複數個第二曝光區域上；以 及執行曝光於覆蓋晶圓的第三曝光區域上，且第三曝光區域對應的曝光能量為零。 In some embodiments, an operating method of an exposure machine includes performing exposure on a first layer of a wafer, wherein the steps of exposing are sequentially performed on a plurality of first exposure areas covering the first layer; performing exposure on the wafer On the second layer of the circle, wherein the second layer is on the first layer, the step of exposing is sequentially performed on a plurality of second exposure areas covering the first layer; with and performing exposure on the third exposure area covering the wafer, and the exposure energy corresponding to the third exposure area is zero.

在一些實施例中，執行曝光於第三曝光區域以及執行曝光於第一曝光區域時具有相同的聚焦深度，第一曝光區域與第三曝光區域最相鄰之一者與第三曝光區域之間距小於兩相鄰的第一曝光區域之間距。 In some embodiments, the exposure in the third exposure area and the exposure in the first exposure area have the same depth of focus, and the distance between the first exposure area and the third exposure area that are most adjacent to the third exposure area less than the distance between two adjacent first exposure areas.

在一些實施例中，第三曝光區域的曝光方式不同於與第三曝光區域最靠近的第一曝光區域的曝光方式。 In some embodiments, the exposure pattern of the third exposure area is different from the exposure pattern of the first exposure area closest to the third exposure area.

在一些實施例中，執行曝光於第三曝光區域以及執行曝光於第二曝光區域時具有相同的聚焦深度，第二曝光區域與第三曝光區域最相鄰之一者與第三曝光區域之間距小於兩相鄰的第二曝光區域之間距。 In some embodiments, the exposure in the third exposure area and the exposure in the second exposure area have the same depth of focus, and the distance between the second exposure area and the third exposure area that are most adjacent to the third exposure area less than the distance between two adjacent second exposure areas.

在一些實施例中，第三曝光區域的曝光方式不同於與第三曝光區域最靠近的第二曝光區域的曝光方式。 In some embodiments, the exposure pattern of the third exposure area is different from the exposure pattern of the second exposure area closest to the third exposure area.

在一些實施例中，曝光第一層、第二層及第三曝光區域是藉由第一曝光方式以及第二曝光方式執行，其中第一曝光方式及第二曝光方式具有相反的掃描方向。 In some embodiments, exposing the first layer, the second layer and the third exposure area is performed by a first exposure mode and a second exposure mode, wherein the first exposure mode and the second exposure mode have opposite scanning directions.

在一些實施例中，執行曝光於第一層包含交錯地於每一第一曝光區域執行第一曝光方式以及第二曝光方式。 In some embodiments, performing the exposure on the first layer includes performing the first exposure mode and the second exposure mode alternately on each of the first exposure regions.

在一些實施例中，執行曝光於第二層包含交錯地於每一第二曝光區域執行第一曝光方式以及第二曝光方式。 In some embodiments, performing the exposure on the second layer includes performing the first exposure mode and the second exposure mode alternately on each of the second exposure regions.

在一些實施例中，第一曝光區域分別對應第二曝 光區域，且每一第一曝光區域的曝光方式與對應的第二曝光區域的曝光方式相同。 In some embodiments, the first exposure areas correspond to the second exposure areas respectively light area, and the exposure mode of each first exposure area is the same as the exposure mode of the corresponding second exposure area.

在一些實施例中，曝光第三區域還包含使得第三曝光區域與第一曝光區域中之一者以及第二曝光區域中之一者至少部分重疊。 In some embodiments, exposing the third area further includes causing the third exposure area to at least partially overlap with one of the first exposure areas and one of the second exposure areas.

10,20:操作方法 10,20: How to operate

100:晶圓 100: Wafer

110:第一層 110: first floor

120:第二層 120: Second floor

200,201~253:第一曝光區域 200,201~253: The first exposure area

300,301~353:第二曝光區域 300,301~353: Second exposure area

400:第三曝光區域 400: Third exposure area

S1,S2,E1,E2:箭頭 S1,S2,E1,E2: Arrow

M1:第一曝光方式 M1: The first exposure method

M2:第二曝光方式 M2: Second exposure method

X,Y:方向 X,Y: direction

d1,d2,d3,d4:間距 d1,d2,d3,d4: spacing

S11~S14:步驟 S11~S14: Steps

第1圖為根據本揭露一實施例之執行曝光於晶圓的操作方法的流程圖。 FIG. 1 is a flowchart of a method of performing exposure on a wafer according to an embodiment of the present disclosure.

第2圖為根據本揭露一實施例執行曝光於晶圓的第一層的示意圖。 FIG. 2 is a schematic diagram of performing exposure on a first layer of a wafer according to an embodiment of the present disclosure.

第3圖為根據本揭露一實施例執行曝光於晶圓的第二層的示意圖。 FIG. 3 is a schematic diagram of performing exposure to a second layer of a wafer according to an embodiment of the present disclosure.

第4圖為第2圖及第3圖之晶圓的每一曝光區域對應的曝光方式示意圖。 FIG. 4 is a schematic diagram of an exposure manner corresponding to each exposure area of the wafer in FIGS. 2 and 3 .

第5圖為第3圖之第二曝光區域的局部放大圖。 FIG. 5 is a partial enlarged view of the second exposure area of FIG. 3 .

以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一 些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。且為了清楚起見，圖式中之層和區域的厚度可能被誇大，並且在圖式的描述中相同的元件符號表示相同的元件。 Several embodiments of the present invention will be disclosed in the drawings below, and for the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the invention, these practical details are unnecessary. In addition, to simplify the diagram, a Some well-known and conventional structures and elements are shown in a simple and schematic manner in the drawings. Also, the thicknesses of layers and regions in the drawings may be exaggerated for clarity, and like reference numerals refer to like elements in the description of the drawings.

第1圖為根據本揭露一實施例之執行曝光於晶圓100的操作方法10的流程圖。第2圖為根據本揭露一實施例執行曝光於晶圓100的第一層110的示意圖。同時參閱第1圖及第2圖。在步驟S11中，執行曝光於晶圓100的第一層110上，其中曝光之步驟依序地執行於複數個第一曝光區域200上。第一曝光區域200為曝光機之光線掃描的範圍，且第一曝光區域200覆蓋晶圓100的第一層110。在本實施例中，第一曝光區域200共排列成七列，且每一列具有不同數量的第一曝光區域200。當曝光的光線掃描完所有第一曝光區域200後，晶圓100的第一層110可完整地被曝光。在本實施例中，曝光機例如可以是艾斯摩爾(ASML)的曝光機，但本揭露並不以此為限。 FIG. 1 is a flowchart of an operating method 10 for performing exposure to a wafer 100 according to an embodiment of the present disclosure. FIG. 2 is a schematic diagram of performing exposure on the first layer 110 of the wafer 100 according to an embodiment of the present disclosure. See also Figure 1 and Figure 2. In step S11 , exposure is performed on the first layer 110 of the wafer 100 , wherein the exposure steps are sequentially performed on a plurality of first exposure regions 200 . The first exposure area 200 is the range scanned by the light of the exposure machine, and the first exposure area 200 covers the first layer 110 of the wafer 100 . In this embodiment, the first exposure areas 200 are arranged in seven columns, and each column has a different number of the first exposure areas 200 . After the exposure light scans all the first exposure areas 200, the first layer 110 of the wafer 100 can be completely exposed. In this embodiment, the exposure machine may be, for example, an ASML exposure machine, but the present disclosure is not limited thereto.

如第2圖所示，對晶圓100的第一層110執行曝光的步驟起始於箭頭S1，從第一曝光區域201以第一曝光方式M1掃描。如第2圖所示，第一曝光方式M1是指曝光機的光線自下而上地掃描第一曝光區域201。接著，曝光機於第一曝光區域202以第二曝光方式M2掃描。如第2圖所示，第二曝光方式M2是指曝光機的光線自上而下地掃描第一曝光區域202。換句話說，第 一曝光方式M1與第二曝光方式M2具有相反的掃描方向。接著，曝光機依序並交錯地於第一曝光區域203~第一曝光區域253執行第一曝光方式M1以及第二曝光方式M2。在本實施例中，對每一列的第一曝光區域200執行曝光的順序是左右相反的。最後，對晶圓100的第一層110執行曝光的步驟結束於箭頭E1處的第一曝光區域253，且曝光機於第一曝光區域253以第一曝光方式M1掃描。 As shown in FIG. 2 , the step of exposing the first layer 110 of the wafer 100 starts with arrow S1 and scans from the first exposure area 201 in the first exposure mode M1 . As shown in FIG. 2 , the first exposure mode M1 means that the light of the exposure machine scans the first exposure area 201 from bottom to top. Next, the exposure machine scans the first exposure area 202 in the second exposure mode M2. As shown in FIG. 2 , the second exposure mode M2 means that the light of the exposure machine scans the first exposure area 202 from top to bottom. In other words, the first The first exposure mode M1 and the second exposure mode M2 have opposite scanning directions. Next, the exposure machine executes the first exposure mode M1 and the second exposure mode M2 in the first exposure area 203 to the first exposure area 253 in sequence and staggered. In this embodiment, the order of performing exposure on the first exposure areas 200 of each column is reversed from left to right. Finally, the step of exposing the first layer 110 of the wafer 100 ends at the first exposure area 253 at the arrow E1, and the exposure machine scans the first exposure area 253 in the first exposure mode M1.

第3圖為根據本揭露一實施例執行曝光於晶圓100的第二層120的示意圖。對晶圓100的第二層120曝光執行於複數個第二曝光區域300。第二曝光區域300覆蓋晶圓100的第二層120。在一些實施例中，第二層120位在第一層110上方，且曝光第二層120之步驟是接續地執行於曝光第一層110之步驟後。同時參閱第2圖及第3圖。第一曝光區域200分別對應第二曝光區域300。舉例來說，圖中左上角的第二曝光區域301對應第一曝光區域248，圖中左下角的第一曝光區域201對應第二曝光區域349。在一些實施例中，第二層120是藉由不同機型的曝光機執行曝光步驟。 FIG. 3 is a schematic diagram of performing exposure on the second layer 120 of the wafer 100 according to an embodiment of the present disclosure. Exposure of the second layer 120 of the wafer 100 is performed on a plurality of second exposure regions 300 . The second exposure area 300 covers the second layer 120 of the wafer 100 . In some embodiments, the second layer 120 is positioned over the first layer 110 , and the step of exposing the second layer 120 is performed sequentially after the step of exposing the first layer 110 . See also Figures 2 and 3. The first exposure areas 200 correspond to the second exposure areas 300 respectively. For example, the second exposure area 301 in the upper left corner in the figure corresponds to the first exposure area 248 , and the first exposure area 201 in the lower left corner in the figure corresponds to the second exposure area 349 . In some embodiments, the exposure step of the second layer 120 is performed by different types of exposure machines.

接著，在步驟S12中，執行曝光於晶圓100的第二層120上，且曝光機以第二曝光方式M2對第二曝光區域301進行掃描。如此一來，對第二曝光區域301及對應的第一曝光區域248執行的曝光可藉由相同的曝光方式執行。接續地，曝光機依序並交錯地於第二曝光 區域302~第二曝光區域314執行第一曝光方式M1以及第二曝光方式M2。 Next, in step S12, exposure is performed on the second layer 120 of the wafer 100, and the exposure machine scans the second exposure area 301 in the second exposure mode M2. In this way, the exposure performed on the second exposure area 301 and the corresponding first exposure area 248 can be performed by the same exposure method. Successively, the exposure machine is sequentially and staggered in the second exposure The first exposure mode M1 and the second exposure mode M2 are executed in the area 302 to the second exposure area 314 .

在本實施例中，操作方法10還包含步驟S13。在對第二曝光區域315執行曝光之前還包含執行曝光於第三曝光區域400。執行曝光於第三曝光區域400以及執行曝光於第二曝光區域300具有相同的聚焦深度，也就是第三曝光區域400覆蓋晶圓100的第二層120，但本揭露並不以此為限。曝光於第三曝光區域400的步驟是以第二曝光方式M2執行。此外，對第三曝光區域400執行曝光時的曝光能量為零，也就是對第三曝光區域400進行虛擬的曝光步驟。 In this embodiment, the operation method 10 further includes step S13. Before exposing the second exposing area 315 , it also includes exposing the third exposing area 400 . The exposure in the third exposure area 400 and the exposure in the second exposure area 300 have the same depth of focus, that is, the third exposure area 400 covers the second layer 120 of the wafer 100 , but the disclosure is not limited thereto. The step of exposing the third exposure area 400 is performed in the second exposure mode M2. In addition, the exposure energy when exposing the third exposure area 400 is zero, that is, a virtual exposure step is performed on the third exposure area 400 .

接著，在操作方法10的步驟S14中，以第一曝光方式M1對第二曝光區域315進行掃描。接著，曝光機依序並交錯地於第二曝光區域315~第二曝光區域353執行第一曝光方式M1以及第二曝光方式M2。如此一來，對第二曝光區域301~353及對應的第一曝光區域201~253曝光時皆可藉由相同的曝光方式執行。最後，對晶圓100的第二層120執行曝光的步驟結束於箭頭E2處的第二曝光區域353。 Next, in step S14 of the operation method 10, the second exposure area 315 is scanned in the first exposure mode M1. Next, the exposure machine executes the first exposure mode M1 and the second exposure mode M2 in the second exposure area 315 to the second exposure area 353 in sequence and staggered. In this way, the exposure of the second exposure areas 301 to 353 and the corresponding first exposure areas 201 to 253 can be performed by the same exposure method. Finally, the step of exposing the second layer 120 of the wafer 100 ends at the second exposure area 353 at arrow E2.

第4圖為第1圖及第2圖之晶圓100的每一第曝光區域200、第二曝光區域300對應的曝光方式示意圖。藉由前述增加第三曝光區域400之方式，可讓互相對應的第一曝光區域201~253與第二曝光區域301~353具有相同的曝光方式。藉由這樣的方式，可降 低第一層110及第二層120對應的圖案之間的疊對誤差。 FIG. 4 is a schematic diagram of an exposure manner corresponding to each of the first exposure area 200 and the second exposure area 300 of the wafer 100 in FIGS. 1 and 2 . By adding the third exposure area 400 as described above, the first exposure areas 201 to 253 and the second exposure areas 301 to 353 corresponding to each other can have the same exposure method. In this way, it is possible to reduce The overlay error between the patterns corresponding to the first layer 110 and the second layer 120 is reduced.

第5圖為第3圖之第二曝光區域300的局部放大圖。如圖所示，相鄰的兩個第二曝光區域300之間具有沿著方向X的間距d1以及沿著方向Y的間距d2。第三曝光區域400與第二曝光區域300之間具有沿著方向X的間距d3以及沿著方向Y的間距d4。間距d3小於間距d1且間距d4小於間距d2。換句話說，第三曝光區域400會與第二曝光區域300部分重疊。由於對第三曝光區域400進行曝光的方式為虛擬曝光，因此第二曝光區域300的曝光效果並不會受影響。此外，藉由讓間距d3小於間距d1且間距d4小於間距d2，可讓執行虛擬曝光所需的時間縮減，而不會過度增加執行曝光於第一層110或第二層120所需的時間。 FIG. 5 is a partial enlarged view of the second exposure area 300 of FIG. 3 . As shown in the figure, two adjacent second exposure regions 300 have a distance d1 along the direction X and a distance d2 along the direction Y between them. There is a distance d3 along the direction X and a distance d4 along the direction Y between the third exposure area 400 and the second exposure area 300 . The pitch d3 is smaller than the pitch d1 and the pitch d4 is smaller than the pitch d2. In other words, the third exposure area 400 may partially overlap with the second exposure area 300 . Since the manner of exposing the third exposure area 400 is virtual exposure, the exposure effect of the second exposure area 300 will not be affected. In addition, by making the interval d3 smaller than the interval d1 and the interval d4 smaller than the interval d2, the time required to perform the dummy exposure can be reduced without excessively increasing the time required to perform the exposure on the first layer 110 or the second layer 120.

在一些其他實施例中，執行於第三曝光區域400的虛擬曝光步驟可為任意數量，且虛擬曝光的步驟也可能被安插在對第一曝光區域200執行曝光的過程之前或過程之中。換句話說，本實施例中的步驟S12及步驟S14可根據實際情況調整，只要可讓第一曝光區域200與對應的第二曝光區域300皆具有相同的曝光方式即可。 In some other embodiments, the virtual exposure steps performed on the third exposure area 400 may be any number, and the virtual exposure step may also be inserted before or during the exposure process on the first exposure area 200 . In other words, step S12 and step S14 in this embodiment can be adjusted according to actual conditions, as long as the first exposure area 200 and the corresponding second exposure area 300 can both have the same exposure method.

根據上述，藉由在相鄰的兩個曝光步驟之間安插虛擬曝光的步驟(即步驟S13)，即可調整第一曝光方式M1及第二曝光方式M2被應用在第二曝光區域301~353的順序。藉由這樣的方式，可降低第一層110 及第二層120對應的圖案之間的疊對誤差。此外，藉由這樣的方式，使曝光的製程可適用於不同曝光機機型，避免因曝光的起始位置及結束位置不同而增加疊對誤差。 According to the above, by interposing a virtual exposure step (ie, step S13 ) between two adjacent exposure steps, the first exposure mode M1 and the second exposure mode M2 can be adjusted to be applied to the second exposure areas 301 to 353 Order. In this way, the first layer 110 can be lowered and the stacking error between the patterns corresponding to the second layer 120 . In addition, in this way, the exposure process can be applied to different types of exposure machines, so as to avoid increasing the stacking error due to the different start and end positions of exposure.

100:晶圓 100: Wafer

120:第二層 120: Second floor

300,301,302,306,307,314,315,349,350,353:第二曝光區域 300, 301, 302, 306, 307, 314, 315, 349, 350, 353: Second exposure area

400:第三曝光區域 400: Third exposure area

S2,E2:箭頭 S2, E2: Arrow

M1:第一曝光方式 M1: The first exposure method

M2:第二曝光方式 M2: Second exposure method

Claims (10)

一種曝光機的操作方法，包括：執行曝光於一晶圓的一第一層上，其中曝光之步驟依序地執行於覆蓋該第一層的複數個第一曝光區域上；執行曝光於該晶圓的一第二層上，其中該第二層在該第二層上，曝光之步驟依序地執行於覆蓋該第一層的複數個第二曝光區域上，其中該些第二曝光區域一對一地對應於該些第一曝光區域；以及執行曝光於覆蓋該晶圓的該第二層的一第三曝光區域上，且該第三曝光區域對應的曝光能量為零。 An operation method of an exposure machine, comprising: performing exposure on a first layer of a wafer, wherein the steps of exposing are sequentially performed on a plurality of first exposure areas covering the first layer; performing exposure on the wafer On a second layer of the circle, wherein the second layer is on the second layer, the step of exposing is sequentially performed on a plurality of second exposure areas covering the first layer, wherein the second exposure areas are One-to-one corresponding to the first exposure areas; and performing exposure on a third exposure area covering the second layer of the wafer, and the exposure energy corresponding to the third exposure area is zero. 如請求項1所述之曝光機的操作方法，其中執行曝光於該第三曝光區域以及執行曝光於該些第一曝光區域時具有相同的聚焦深度，該些第一曝光區域與該第三曝光區域最相鄰之一者與該第三曝光區域之間距小於兩相鄰的該些第一曝光區域之間距。 The operation method of an exposure machine as claimed in claim 1, wherein the exposure in the third exposure area and the exposure in the first exposure areas have the same depth of focus, the first exposure areas and the third exposure The distance between the most adjacent one of the areas and the third exposure area is smaller than the distance between two adjacent first exposure areas. 如請求項2所述之曝光機的操作方法，其中該第三曝光區域的曝光方式不同於與該第三曝光區域最靠近的該第一曝光區域的曝光方式。 The operation method of the exposure machine according to claim 2, wherein the exposure mode of the third exposure area is different from the exposure mode of the first exposure area closest to the third exposure area. 如請求項1所述之曝光機的操作方法，其中執行曝光於該第三曝光區域以及執行曝光於該些第二曝光區域時具有相同的聚焦深度，該些第二曝光區域與該第三 曝光區域最相鄰之一者與該第三曝光區域之間距小於兩相鄰的該些第二曝光區域之間距。 The operation method of an exposure machine as claimed in claim 1, wherein the exposure in the third exposure area and the exposure in the second exposure areas have the same depth of focus, the second exposure areas and the third exposure area have the same depth of focus The distance between the most adjacent one of the exposure areas and the third exposure area is smaller than the distance between two adjacent second exposure areas. 如請求項4所述之曝光機的操作方法，其中該第三曝光區域的曝光方式不同於與該第三曝光區域最靠近的該第二曝光區域的曝光方式。 The operation method of the exposure machine according to claim 4, wherein the exposure mode of the third exposure area is different from the exposure mode of the second exposure area closest to the third exposure area. 如請求項1所述之曝光機的操作方法，其中曝光該第一層、該第二層及該第三曝光區域是藉由一第一曝光方式以及一第二曝光方式執行，其中該第一曝光方式及該第二曝光方式具有相反的掃描方向。 The operation method of an exposure machine as claimed in claim 1, wherein exposing the first layer, the second layer and the third exposure area is performed by a first exposure method and a second exposure method, wherein the first exposure method The exposure mode and the second exposure mode have opposite scanning directions. 如請求項6所述之曝光機的操作方法，其中執行曝光於該第一層包含交錯地於每一該些第一曝光區域執行該第一曝光方式以及該第二曝光方式。 The operating method of an exposure machine as claimed in claim 6, wherein performing the exposure on the first layer comprises performing the first exposure method and the second exposure method alternately on each of the first exposure areas. 如請求項6所述之曝光機的操作方法，其中執行曝光於該第二層包含交錯地於每一該些第二曝光區域執行該第一曝光方式以及該第二曝光方式。 The operating method of an exposure machine as claimed in claim 6, wherein performing the exposure on the second layer comprises performing the first exposure mode and the second exposure mode alternately in each of the second exposure areas. 如請求項6所述之曝光機的操作方法，其中該些第一曝光區域分別對應該些第二曝光區域，且每一該些第一曝光區域的曝光方式與對應的該第二曝光區域的曝光方式相同。 The operation method of an exposure machine according to claim 6, wherein the first exposure areas correspond to the second exposure areas, and the exposure mode of each of the first exposure areas is the same as the exposure mode of the corresponding second exposure area. Exposure is the same. 如請求項1所述之曝光機的操作方法，其中曝光該第三曝光區域還包含使得該第三曝光區域與該些第一曝光區域中之一者以及該些第二曝光區域中之一者至少部分重疊。 The operation method of an exposure machine as claimed in claim 1, wherein exposing the third exposure area further comprises making the third exposure area, one of the first exposure areas and one of the second exposure areas at least partially overlap.
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TW201248334A (en) * 2011-05-24 2012-12-01 Pinebrook Imaging Technology Ltd An optical imaging writer system
TWI559095B (en) * 2009-08-25 2016-11-21 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI559095B (en) * 2009-08-25 2016-11-21 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
TW201248334A (en) * 2011-05-24 2012-12-01 Pinebrook Imaging Technology Ltd An optical imaging writer system

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