TWI756282B - Method for producing a micromechanical component - Google Patents
Method for producing a micromechanical component Download PDFInfo
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- TWI756282B TWI756282B TW106136492A TW106136492A TWI756282B TW I756282 B TWI756282 B TW I756282B TW 106136492 A TW106136492 A TW 106136492A TW 106136492 A TW106136492 A TW 106136492A TW I756282 B TWI756282 B TW I756282B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
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Abstract
Description
本發明係基於根據請求項1之前言的一種方法。
The invention is based on a method according to the preamble of
此方法大體已知。若在微機械構件之腔體中需要特定內部壓力,或若希望具有特定化學組成物之氣體混合物被圍封於該腔體中,則通常在該微機械構件之加蓋期間或在基板晶圓與蓋晶圓之間的黏合過程期間設定該內部壓力或該化學組成物。在加蓋期間,例如,將蓋連接至基板,從而蓋與基板一起圍封腔體。藉由在加蓋期間設定存在於周圍空間中之大氣或壓力及/或氣體混合物之化學組成物,可以此方式在腔體中設定特定內部壓力及/或特定化學組成物。 This method is generally known. If a specific internal pressure is required in the cavity of the micromechanical component, or if a gas mixture with a specific chemical composition is desired to be enclosed in the cavity, usually during capping of the micromechanical component or at the substrate wafer The internal pressure or the chemical composition is set during the bonding process with the cover wafer. During capping, for example, the lid is attached to the substrate so that the lid together with the substrate encloses the cavity. By setting the atmosphere or pressure and/or the chemical composition of the gas mixture present in the surrounding space during capping, a specific internal pressure and/or a specific chemical composition can be set in the cavity in this way.
諸如(例如)慣性感測器之微機械構件較佳藉由晶圓接合程序密閉性密封,以便保護感測器不受環境影響(灰塵、濕氣、氣體)或故意圍封特定氣體或真空。用於晶圓級下微機械慣性感測器之密閉式密封的方法之實例為:共晶接合、玻璃粉接合及熱壓接合。迄今為止,已在晶圓級設定所定義壓力(舉例而言,約1毫巴之真空、約幾百毫巴之平均壓力,或達至2000毫巴之正壓)或特定氣體(舉例而言,氮或氖)。大體而言,在旋轉速率感測器之情況下設定低內部壓力(高品質系統),且在加速度感測器之情況 下設定高內部壓力(高衰減),其藉由在晶圓接合程序期間排氣或藉由故意饋入氣體來達成。 Micromechanical components such as, for example, inertial sensors are preferably hermetically sealed by the wafer bonding process in order to protect the sensors from environmental influences (dust, moisture, gases) or intentionally enclose certain gases or vacuums. Examples of methods for hermetic sealing of micromachined inertial sensors at wafer level are: eutectic bonding, glass frit bonding, and thermocompression bonding. To date, defined pressures (e.g. vacuum of about 1 mbar, average pressures of about a few hundred mbar, or positive pressures up to 2000 mbar) or specific gases (e.g. , nitrogen or neon). In general, set a low internal pressure (high quality system) in the case of the rotation rate sensor, and in the case of the acceleration sensor A high internal pressure (high damping) is set down, either by venting during the wafer bonding process or by deliberately feeding in gas.
本發明之目標為以一種相比先前技術簡單、節省資源且低成本的方式提供一種用於製造具有第一腔體及第二腔體之微機械構件的方法,其中可在該第一腔體中設定第一壓力,且可在該第二腔體中設定第二壓力。 It is an object of the present invention to provide a method for fabricating a micromechanical component having a first cavity and a second cavity in which the first cavity can be A first pressure can be set in the second cavity, and a second pressure can be set in the second cavity.
該目標藉由提供以下項來達成,--在第二子步驟中,--設定第二壓力及/或第二化學組成物,且--該基板器件及該蓋器件以形成第二腔體之方式彼此連接,其相對於該微機械構件之周圍空間且相對於該第一腔體閉合(詳言之,密閉性閉合),其中該第二壓力占主導,及/或該第二化學組成物圍封於該第二腔體中。 This objective is achieved by providing, - in a second sub-step, - setting a second pressure and/or a second chemical composition, and - the substrate device and the lid device to form a second cavity are connected to each other in such a way that they are closed with respect to the surrounding space of the micromechanical component and with respect to the first cavity (in detail, hermetically closed), wherein the second pressure prevails, and/or the second chemical composition The object is enclosed in the second cavity.
藉由提供該基板器件及該蓋器件在第一子步驟及在第二子步驟中彼此連接,其中該第一腔體形成於該第一子步驟中且該第二腔體形成於該第二子步驟中,有利地可能在一定相(phased)接合過程中,可首先在該第一腔體中設定該第一壓力,且可隨後在該相同接合過程內於該第二腔體中設定該第二壓力。 by providing the substrate device and the lid device connected to each other in a first sub-step and in a second sub-step, wherein the first cavity is formed in the first sub-step and the second cavity is formed in the second sub-step In a sub-step, advantageously possibly during a phased bonding process, the first pressure can first be set in the first cavity, and the first pressure can be subsequently set in the second cavity during the same bonding process. second pressure.
在一定相過程中組合該第一子步驟與該第二子步驟使得省掉兩個完整接合過程有利地成為可能,且因此相比該先前技術顯著減少過程時間。此外,詳言之由於該製備步驟與該第一子步驟及該第二子步驟組合,因此有利地有可能實現較小晶片大小(「佔據面積(footprint)」),且因此減少每個微機械構件的材料成本,且提高每個晶圓的微機械構件數目,藉此可以較低成本產生該微機械構件或包含該微機械構件之該晶片。 Combining the first sub-step with the second sub-step in a certain phase process makes it advantageously possible to dispense with two complete joining processes, and thus significantly reduce the process time compared to the prior art. Furthermore, in particular due to the combination of the fabrication step with the first sub-step and the second sub-step, it is advantageously possible to achieve a smaller wafer size ("footprint") and thus reduce each micromechanical The material cost of the components and the number of micromechanical components per wafer are increased, whereby the micromechanical components or the wafer containing the micromechanical components can be produced at a lower cost.
詳言之,有利地有可能用本發明實現在一個晶片中在晶圓級下設定兩個壓力值,其由加速度感測器及旋轉速率感測器組成。詳言之,作為使用故意設定之表面形態的結果且作為該等晶圓接合方法之機制之組合的結果,此處可能在一個過程內在晶圓級下於晶片中設定不同內部壓力。 In detail, it is advantageously possible with the present invention to set two pressure values at wafer level in one wafer, consisting of an acceleration sensor and a rotational rate sensor. In particular, it is here possible to set different internal pressures in the wafer at the wafer level within one process as a result of the use of deliberately set surface topography and as a result of the combination of the mechanisms of these wafer bonding methods.
因此,以一種相比先前技術簡單、節省資源且低成本的方式提供一種用於製造具有第一腔體及第二腔體之微機械構件的方法,其中可在該第一腔體中設定第一壓力,且可在該第二腔體中設定第二壓力。 Therefore, a method for fabricating a micromechanical component having a first cavity and a second cavity in which the a pressure, and a second pressure can be set in the second cavity.
結合本發明,術語「微機械構件」應理解為意謂覆蓋微機械構件及微機電構件兩者之術語。 In connection with the present invention, the term "micromechanical member" should be understood as a term meant to cover both micromechanical and microelectromechanical members.
本發明較佳意欲用於一種具有兩個腔體之微機械構件的產生或用於該具有兩個腔體之微機械構件。然而,本發明(例如)亦意欲用於一種具有三個腔體或具有多於三個腔體(亦即,四個、五個、六個或多於六個腔體)之微機械構件。 The invention is preferably intended to be used for the production of a micromechanical component with two cavities or for such a micromechanical component with two cavities. However, the present invention, for example, is also intended for use with a micromechanical component having three cavities or having more than three cavities (ie, four, five, six, or more than six cavities).
可自附屬項及參考圖式之說明得出對本發明之有利改進及發展。 Advantageous refinements and developments of the invention can be derived from the description of the appendices and referenced figures.
根據一較佳開發,得知該第一壓力比該第二壓力高,其中用於量測加速度之第一感測器單元配置於該第一腔體中,且用於量測旋轉速率之第二感測器單元配置於該第二腔體中。根據一較佳開發,得知該第一壓力比該第二壓力低,用於量測旋轉速率之第一感測器單元配置於該第一腔體中且用於量測加速度之第二感測器單元配置於該第二腔體中。因此, 以有利方式提供一種用於旋轉速率量測及加速度量測之機械穩固微機械構件,其針對該第一感測器單元及該第二感測器單元兩者具有最佳操作條件。 According to a preferred development, it is known that the first pressure is higher than the second pressure, wherein the first sensor unit for measuring the acceleration is arranged in the first cavity, and the first sensor unit for measuring the rotation rate is Two sensor units are arranged in the second cavity. According to a preferred development, knowing that the first pressure is lower than the second pressure, a first sensor unit for measuring the rotation rate is disposed in the first cavity and a second sensor unit for measuring the acceleration The detector unit is arranged in the second cavity. Thus, advantageously, a mechanically robust micromechanical component for rotational rate measurement and acceleration measurement is provided, which has optimal operating conditions for both the first sensor unit and the second sensor unit.
根據一較佳開發,得知該基板器件包含第一基板框及第二基板框,其中該第一基板框及該第二基板框以一方式形成,使得在該第一子步驟之前垂直於該基板器件之基板範圍主平面的該第一基板框之範圍大於垂直於該基板範圍主平面的該第二基板框之範圍。以此方式,有利地使得以下情況成為可能:藉助於該第一基板框及該第二基板框之形成,可在該第一子步驟中形成該閉合(詳言之,密閉性閉合)之第一腔體,且可在該第二子步驟中形成該閉合(詳言之,密閉性閉合)之第二腔體。 According to a preferred development, it is known that the substrate device includes a first substrate frame and a second substrate frame, wherein the first substrate frame and the second substrate frame are formed in a manner such that before the first sub-step, they are perpendicular to the The extent of the first substrate frame of the main plane of the substrate area of the substrate device is larger than the extent of the second substrate frame perpendicular to the main plane of the substrate area. In this way, it is advantageously made possible that, by means of the formation of the first substrate frame and the second substrate frame, the first sub-step of the closure (in detail, the hermetic closure) can be formed in the first sub-step A cavity, and the closed (specifically, hermetically closed) second cavity can be formed in the second sub-step.
根據一較佳開發,得知該蓋器件包含第一蓋框及第二蓋框,其中該第一蓋框及該第二蓋框以一方式形成,使得在該第一子步驟之前,垂直於該蓋器件之蓋範圍主平面的該第一蓋框之範圍大於垂直於該蓋範圍主平面的該第二蓋框之範圍。以此方式,有利地使得藉助於該第一蓋框及該第二蓋框之形成,可在該第一子步驟中形成該閉合(詳言之,密閉性閉合)之第一腔體,且可在該第二子步驟中形成該閉合(詳言之,密閉性閉合)之第二腔體成為可能。 According to a preferred development, it is known that the cover device includes a first cover frame and a second cover frame, wherein the first cover frame and the second cover frame are formed in such a way that before the first sub-step, perpendicular to the The extent of the first cover frame of the main plane of the cover area of the cover device is larger than the area of the second cover frame perpendicular to the main plane of the cover area. In this way, by means of the formation of the first cover frame and the second cover frame, the closed (in detail, hermetically closed) first cavity can be formed in the first sub-step, and It becomes possible to form the closed (in detail, hermetically closed) second cavity in this second sub-step.
根據一較佳開發,得知該基板器件包含第一基板框及第二基板框,其中在該第一子步驟之前,該第二基板框以一方式建構,使得在該第一子步驟期間於該第二腔體與該周圍空間之間形成接取開口。以此方式,有利地使得以下情況成為可能:即使在該第一基板框及該第二基板框之相同範圍垂直於該基板範圍主平面的情況下,藉助於該第二基板框之該建構,在該第一子步驟中該第二腔體尚未閉合(詳言之,尚未密閉性閉合), 且在該第二子步驟中該第二腔體可閉合(詳言之,密閉性閉合)。 According to a preferred development, it is known that the substrate device comprises a first substrate frame and a second substrate frame, wherein prior to the first sub-step, the second substrate frame is constructed in a manner such that during the first sub-step An access opening is formed between the second cavity and the surrounding space. In this way, it is advantageously made possible that, by virtue of the construction of the second substrate frame, even in the case where the same extent of the first substrate frame and the second substrate frame is perpendicular to the main plane of the substrate extent, The second cavity is not yet closed (in detail, not yet hermetically closed) in the first sub-step, and the second cavity may be closed (in detail, hermetically closed) in the second sub-step.
根據一較佳開發,得知該蓋器件包含第一蓋框及第二蓋框,其中在該第一子步驟之前,該第二蓋框以一方式建構,使得在該第一子步驟期間於該第二腔體與該周圍空間之間形成接取開口。以此方式,有利地使得以下情況成為可能:即使在該第一蓋框及該第二蓋框之相同範圍垂直於該蓋範圍主平面的情況下,藉助於該第二蓋框之該建構,在該第一子步驟中該第二腔體尚未閉合(詳言之,尚未密閉性閉合),且在該第二子步驟中該第二腔體可閉合(詳言之,密閉性閉合)。 According to a preferred development, it is known that the cover device comprises a first cover frame and a second cover frame, wherein prior to the first sub-step, the second cover frame is constructed in a manner such that during the first sub-step An access opening is formed between the second cavity and the surrounding space. In this way, it is advantageously made possible that, by virtue of this construction of the second cover frame, even in the case where the same extent of the first cover frame and the second cover frame is perpendicular to the main plane of the cover extent, The second cavity is not yet closed (in detail, not yet hermetically closed) in the first sub-step, and the second cavity may be closed (in detail, hermetically closed) in the second sub-step.
根據一較佳開發,得知該第一子步驟及該第二子步驟在一個接合過程中執行。詳言之,以此方式,有利地使得省掉兩個完整接合過程成為可能。 According to a preferred development, it is known that the first sub-step and the second sub-step are performed in one bonding process. In particular, in this way it is advantageously possible to dispense with two complete joining processes.
根據一較佳開發,得知該基板器件及該蓋器件以一方式在該第一子步驟中彼此連接,使得該第一基板框及/或該第一蓋框圍封該閉合(詳言之,密閉性閉合)的第一腔體,其中該基板器件及該蓋器件以一方式在該第二子步驟中彼此連接,使得該第二基板框及/或該第二蓋框圍封該閉合(詳言之,密閉性閉合)的第二腔體。以此方式,有利地使得以下情況成為可能:藉助於該第一基板框及/或該第一蓋框,可在該第一腔體中設定該第一壓力,且藉助於該第二基板框及/或該第二蓋框,可在該第二腔體中設定該第二壓力。 According to a preferred development, it is known that the substrate device and the cover device are connected to each other in the first sub-step in such a way that the first substrate frame and/or the first cover frame enclose the closure (in detail , hermetically closed) first cavity, wherein the substrate device and the cover device are connected to each other in the second sub-step in such a way that the second substrate frame and/or the second cover frame enclose the closure (in detail, hermetically closed) second cavity. In this way, it is advantageously made possible that, by means of the first substrate frame and/or the first cover frame, the first pressure can be set in the first cavity, and by means of the second substrate frame And/or the second cover frame, the second pressure can be set in the second cavity.
根據一較佳開發,得知在該第一子步驟中,該基板器件與該蓋器件藉助於熱壓接合彼此連接。根據一較佳開發,得知在該第一子步驟中,該基板器件與該蓋器件藉助於密封玻璃接合彼此連接。根據一較佳開 發,得知在該第一子步驟中,該基板器件與該蓋器件藉助於共晶接合彼此連接。根據一較佳開發,得知在該第二子步驟中,該基板器件與該蓋器件藉助於共晶接合彼此連接。根據一較佳開發,得知在該第二子步驟中,該基板器件與該蓋器件藉助於密封玻璃接合彼此連接。以此方式,提供用於將不同接合機制整合至一個接合過程中的有利可能性。 According to a preferred development, it is known that in the first substep, the substrate component and the cover component are connected to each other by means of thermocompression bonding. According to a preferred development, it is known that in this first substep, the substrate component and the cover component are connected to each other by means of sealing glass bonding. According to a preferred development, it is known that in the first sub-step, the substrate device and the lid device are connected to each other by means of eutectic bonding. According to a preferred development, it is known that in the second sub-step, the substrate device and the lid device are connected to each other by means of eutectic bonding. According to a preferred development, it is known that in the second sub-step, the substrate component and the cover component are connected to each other by means of sealing glass bonding. In this way, advantageous possibilities for integrating different joining mechanisms into one joining process are provided.
1:微機械構件 1: Micromechanical components
3:基板器件 3: Substrate device
5:蓋器件 5: Cover device
7:周圍空間 7: Surrounding space
11:第一腔體 11: The first cavity
12:第二腔體 12: Second cavity
30:基板晶圓 30: substrate wafer
31:第一基板框 31: The first substrate frame
32:第二基板框 32: Second substrate frame
40:第一接取開口/間隙或空隙 40: First access opening/gap or void
41:間隙或空隙 41: Gap or void
42:間隙或空隙 42: Gap or void
43:間隙或空隙 43: Gap or void
50:蓋晶圓 50: Cover wafer
51:第一蓋框 51: The first cover frame
52:第二蓋框 52: Second cover frame
53:密封唇緣 53: Sealing lip
54:切割道 54: Cutting Road
55:結構 55: Structure
100:基板範圍主平面 100: The main plane of the substrate range
101:蓋範圍主平面 101: Main plane of cover range
131:第一鋁框 131: The first aluminum frame
151:氧化物框/氧化矽窄框 151: oxide frame/silicon oxide narrow frame
151':氧化矽窄框 151': Silicon oxide narrow frame
200:製備步驟 200: Preparation steps
201:第一子步驟 201: First substep
202:第二子步驟 202: Second substep
231:第二鋁框 231: Second aluminum frame
251:鍺/鍺框/鍺接合框 251: germanium/germanium frame/germanium bonding frame
300:平面 300: Flat
圖1展示藉助於實例給定的根據本發明之具體實例的微機械構件之製造方法的示意性表示。 FIG. 1 shows a schematic representation of a method of manufacturing a micromechanical component according to an embodiment of the invention, given by way of example.
圖2至圖7以示意性表示來展示藉助於實例給定的在根據本發明之具體實例之方法期間的微機械構件。 2 to 7 show, in schematic representations, the micromechanical components given by way of example during a method according to an embodiment of the invention.
在各個圖式中,相同部件始終具備相同標示,且因此通常在每一情況下亦僅參考或提到一次。 In the various figures, the same parts are always provided with the same designations and are therefore generally referenced or mentioned only once in each case.
在圖1中,展示藉助於實例給定的根據本發明之具體實例的用於製造微機械構件1之方法的示意性表示。此外,在圖2至圖7中,存在藉助於實例給定的在根據本發明之具體實例之方法期間的微機械構件1之示意性表示。 In FIG. 1 a schematic representation of a method for producing a
根據本發明,提出微機械構件1包含基板器件3及蓋器件5。較佳地,基板器件3沿基板範圍主平面100延伸,且蓋器件5沿蓋範圍主平面101延伸。此外,基板器件3較佳至少包含基板晶圓30之部分,且蓋器件5較佳至少包含蓋晶圓50之部分。較佳地,基板晶圓30包含功能 晶圓。而且,基板器件3較佳包含第一基板框31及第二基板框32,且蓋器件5較佳包含第一蓋框51及第二蓋框52。此外,第一基板框31至少包含結構層中配置於基板晶圓30上的部分,且第二基板框32至少包含該結構層中配置於基板晶圓30上的另一部分。此外,第一蓋框51至少包含結構層中配置於蓋晶圓50上的部分,且第二蓋框52至少包含結構層中配置於蓋晶圓50上的另一部分。 According to the invention, it is proposed that the
較佳地,第一基板框31包含鋁。此外,第二基板框32較佳包含鋁。而且,第一蓋框51較佳包含鍺。此外,第二蓋框52較佳包含鍺。尤其較佳地,第一蓋框51包含鍺及氧化矽。此外,基板晶圓30較佳包含矽晶圓及/或蓋晶圓50較佳包含另一矽晶圓。 Preferably, the
此外,根據本發明得知:--在製備步驟200中,建構基板器件3及/或蓋器件5。此處較佳提供,藉由在基板晶圓30之部分上,及/或在蓋晶圓50之部分上,及/或在第一基板框31及/或第二基板框32及/或第一蓋框51及/或第二蓋框52之尚未建構的層上沉積及/或生長且建構其他層,來建構基板晶圓30之部分及/或蓋晶圓50之部分及/或第一基板框31及/或第二基板框32及/或第一蓋框51及/或第二蓋框52之各別層,較佳地在製備步驟200期間。而且,較佳提供,基板器件3藉助於表面微機械加工進行建構。 Furthermore, according to the present invention, it is known that: -- in the
此外,蓋器件5較佳藉助於主體微機械加工進行建構。 Furthermore, the
較佳地,在第一子步驟201之前,詳言之在製備步驟200中,第一基板框31及第二基板框32以一方式形成,使得在第一子步驟201之前,尤其較佳地亦在第二子步驟202之前,垂直於基板器件3之基板範 圍主平面100的第一基板框31之範圍大於垂直於基板範圍主平面100的第二基板框32之範圍。此外,在第一子步驟201之前,詳言之在製備步驟200中,較佳地第一蓋框51及第二蓋框52以一方式形成,使得在第一子步驟201之前,尤其較佳地亦在第二子步驟202之前,垂直於蓋器件5之蓋範圍主平面101的第一蓋框51之範圍大於垂直於蓋範圍主平面101的第二蓋框52之範圍。 Preferably, before the
此外,在製備步驟200之後且在第一子步驟201之前,基板器件3及蓋器件5較佳地以一方式關於彼此配置,使得基板範圍主平面100與蓋範圍主平面101經配置彼此平行。此處較佳提供,基板器件3及蓋器件5以一方式關於彼此配置,使得第一基板框31及第二基板框32面向蓋器件5。此外,基板器件3及蓋器件5較佳地以一方式關於彼此配置,該方式使得第一蓋框51及第二蓋框52面向基板器件3。 Furthermore, after the
而且,根據本發明,--在第一子步驟201中,較佳地在製備步驟200之後執行,--設定第一壓力及/或第一化學組成物,及--基板器件3及蓋器件5以形成第腔體11的一方式彼此連接,其關於微機械構件1之周圍空間7閉合(詳言之密閉性閉合),其中第一壓力占主導及/或第一化學組成物圍封於第一腔體11中。較佳地,第一化學組成物包含氮。此外,第一化學組成物較佳包含氮,其按體積計占至少90%的比例(尤其較佳地至少99%,最為較佳地至少99.9%)。此外,第一化學組成物較佳包含氖。此外,第一化學組成物較佳包含氖,其按體積計占至少90%的比例(尤其較佳地至少99%,最為較佳地至少99.9%)。 Furthermore, according to the present invention, -- in the
較佳提供,尤其較佳地在設定第一壓力及/或第一化學組成物之前,基板器件3及蓋器件5經配置彼此間隔一距離。此外,基板器件3及蓋器件5較佳以一方式關於彼此配置,使得第一基板框31中位於基板範圍主平面100上的突出部與第一蓋框51中位於基板範圍主平面100上的突出部重疊。此外,基板器件3及蓋器件5較佳以一方式關於彼此配置,使得第二基板框32中位於基板範圍主平面100上的突出部與第二蓋框52中位於基板範圍主平面100上的突出部重疊。以藉助於實例展示之例示性具體實例的方式進行配置的基板器件3及蓋器件5在圖3至圖6中進行展示。 It is preferably provided, especially preferably before the setting of the first pressure and/or the first chemical composition, that the substrate device 3 and the
一旦基板器件3及蓋器件5已如圖3至圖6中所示的例如進行配置,便設定第一壓力及/或第一化學組成物。較佳地,第一壓力及/或第一化學組成物在周圍空間7中進行設定,且因此亦在基板器件3與蓋器件5之間於空間上占主導,詳言之在尚未閉合(詳言之,尚未密閉性閉合)的第一腔體11及在尚未閉合(詳言之,尚未密閉性閉合)的第二腔體12中。 Once the substrate device 3 and the
較佳地根據本發明,尤其較佳地在設定第一壓力及/或第一化學組成物期間及/或之後,在移動步驟中減少基板範圍主平面100與蓋範圍主平面101之間的距離或基板器件3與蓋器件5之間的距離。換言之,基板器件3相對於基板範圍主平面100且在蓋器件5之方向上垂直移動,及/或蓋器件5相對於蓋範圍主平面101且在基板器件3之方向上垂直移動。 Preferably according to the invention, it is especially preferred to reduce the distance between the
在藉助於圖3、圖4及圖6中之實例展示的例示性具體實例中,較佳地,第一基板框31及第一蓋框51首先藉由所執行之移動步驟彼此接觸。 In the illustrative embodiment shown by means of the example in FIGS. 3 , 4 and 6 , preferably, the
較佳地,在藉助於圖7中之實例展示的例示性具體實例中, 不僅第一基板框31及第一蓋框51,第二基板框32及第二蓋框52亦較佳地藉由所執行之移動步驟彼此接觸。 Preferably, in the illustrative embodiment shown by means of the example in FIG. 7, not only the
此外,在第一子步驟201之前,詳言之在製備步驟200,第二基板框32以一方式架構且形成,使得在第一子步驟201期間,於詳言之尚未密閉性閉合的第二腔體12與周圍空間7之間形成第一接取開口40。此外,在第一子步驟201之前,詳言之在製備步驟200中,第二蓋框52以一方式進行建構及形成,以便在第一子步驟201期間,於詳言之尚未閉合(詳言之,尚未密閉性閉合)的第二腔體12與周圍空間7之間形成一接取開口或另一接取開口。換言之,微機械構件1在第一子步驟201之後及在第二子步驟202之前包含:第一腔體11,其相對於周圍空間7閉合(詳言之,密閉性閉合);及第二腔體12,其相對於周圍空間7並非閉合(詳言之,並非密閉性閉合)。 Furthermore, before the
而且,根據本發明,得知--在第二子步驟202中,較佳地在第一子步驟201之後執行,--設定第二壓力及/或第二化學組成物,且--基板器件3及蓋器件5以形成第二腔體12之一方式彼此連接,其相對於微機械構件1之周圍空間7且相對於第一腔體11閉合(詳言之,密閉性閉合),其中第二壓力占主導,及/或第二化學組成物圍封於第二腔體12中。 Moreover, according to the present invention, it is known that - in the
較佳地,第二壓力及/或第二化學組成物在周圍空間7中進行設定,且因此亦在基板器件3與蓋器件5之間於空間上占主導,詳言之在尚未閉合(詳言之,尚未密閉性閉合)的第二腔體12中。 Preferably, the second pressure and/or the second chemical composition is set in the surrounding
較佳地根據本發明,尤其較佳地在設定第二壓力及/或第二化學組成物期間及/或之後,進一步在另一移動步驟中減少基板範圍主平面100與蓋範圍主平面101之間的距離。換言之,基板器件3相對於基板範圍主平面100且在蓋器件5之方向上垂直移動,及/或蓋器件5相對於基板範圍主平面100且在基板器件3之方向上垂直移動。基板器件3及蓋器件5此處較佳以一方式移動,使得基板範圍主平面100與蓋範圍主平面101在每一時間點較佳地配置為彼此平行。較佳地,在藉助於圖3、圖4、圖6及圖7中之實例展示的例示性具體實例中,第一基板框31及/或第一蓋框51較佳地經塑性變形,及/或藉助於機械壓力及/或溫度轉變為聚合之液態。較佳地,在藉助於圖7中之實例展示的例示性具體實例中,不僅第一基板框31及/或第一蓋框51,第二基板框32及/或第二蓋框52亦較佳地經塑性變形,及/或藉助於機械壓力及/或溫度轉變為聚合之液態。 Preferably according to the present invention, especially preferably during and/or after setting the second pressure and/or the second chemical composition, the difference between the substrate area
在藉助於圖3、圖4及圖6中之實例展示的例示性具體實例中,第二基板框32及第二蓋框52較佳地藉由所執行之另一移動步驟彼此接觸。 In the illustrative embodiment shown by means of the example in FIGS. 3 , 4 and 6 , the
較佳地,根據本發明,得知在另一移動步驟期間,第一腔體11相對於微機械構件1之周圍空間7保持閉合(詳言之,密閉性閉合)。此外,第一腔體11之體積在第二子步驟202期間較佳地減少最大10%,尤其較佳地減少最大1%,最為較佳地減少最大0.1%。而且,在第二子步驟202之後的第一壓力比第二子步驟202之前的第一壓力較佳地高出最大10%,尤其較佳地高出最大1%,最為較佳地高出最大0.1%。此外,第一化學組成物較佳地在第二子步驟202期間保持實質上恆定。 Preferably, according to the invention, it is known that during another moving step, the
而且,基板器件3及蓋器件5較佳地在第一子步驟201中以一方式彼此連接,使得第一基板框31及/或第一蓋框51圍封閉合(詳言之密閉性閉合)的第一腔體11,其中基板器件3及蓋器件5在第二子步驟202中以一方式彼此連接,使得第二基板框32及/或第二蓋框52圍封閉合(詳言之密閉性閉合)的第二腔體12。 Furthermore, the substrate device 3 and the
根據本發明,較佳地提供,在第一子步驟201及第二子步驟202中,基板器件3及蓋器件5藉由接合彼此連接。此外,在第一子步驟201中,基板器件3及蓋器件5較佳地藉助於熱壓接合彼此連接。此外,在第一子步驟201中,基板器件3及蓋器件5較佳地藉助於密封玻璃接合彼此連接。而且,在第一子步驟201中,基板器件3及蓋器件5較佳地藉助於共晶接合彼此連接。此外,在第二子步驟202中,基板器件3及蓋器件5較佳地藉助於共晶接合彼此連接。而且,在第二子步驟202中,基板器件3及蓋器件5較佳地藉助於密封玻璃接合彼此連接。 According to the present invention, it is preferably provided that, in the
而且,第二子步驟202較佳地以一方式執行,使得在第二子步驟202之後,垂直於基板器件3之基板範圍主平面100的第一基板框31之範圍實質上等於垂直於基板範圍主平面100的第二基板框32之範圍。此外,第二子步驟202較佳地以一方式執行,使得垂直於蓋器件5之蓋範圍主平面101的第一蓋框51之範圍等於垂直於蓋範圍主平面101的第二蓋框52之範圍。此外,第二子步驟202較佳地以一方式執行,使得在第二子步驟202之後,垂直於基板範圍主平面100的第一基板框31及第一蓋框51之範圍實質上等於垂直於基板範圍主平面100的第二基板框32及第二蓋框52之範圍。 Furthermore, the
較佳地,在圖3至圖5中所示之例示性具體實例的情況下,基板器件3及蓋器件5在第一子步驟201中藉助於熱壓彼此連接,且在第二子步驟202中藉助於共晶接合彼此連接。 Preferably, in the case of the illustrative embodiment shown in FIGS. 3 to 5 , the substrate device 3 and the
在圖3中所示之例示性具體實例的情況下,在第一子步驟201之前,較佳地在製備步驟200中,接合框表面形態係在鍺251下用氧化物框151產生,較佳地用氧化矽框產生。換言之,第一蓋框51包含氧化物框151,其中氧化物框151較佳地包含氧化矽,及鍺框251或鍺接合框251。較佳地,在製備步驟200中,首先,氧化物框151沉積或生長及建構(尤其較佳地預結構化)於蓋晶圓50之部分上,且隨後鍺框251沉積於氧化物框151上。如藉助於圖3中之實例所示,意欲在第一子步驟201之後及在第二子步驟202之後圍封第一壓力或圍封第一腔體11的晶片較佳地在平行於基板範圍主平面100的平面上藉由一個(或多個)氧化矽窄框151、151'圍繞在蓋邊上,其中該一個(或多個)氧化矽窄框151、151'位於接合框之鍺或鍺接合框251之下,且造成接合框或鍺接合框251之高度增大。在接合過程之第一部分中或在第一子步驟201中,此等晶片在第一壓力及低於共晶溫度之溫度下藉由熱壓接合密封。在另一方面,意欲圍封第二壓力或圍封第二腔體12之彼等晶片的接合框在接合框高度上並不增大,從而使得其在第一晶片密封之後或在第一子步驟201之後仍打開。在周圍空間7或接合腔室中的壓力改變之後,其在接合過程之第二部分中或在第二子步驟202中僅僅用第二壓力密封。第二密封在共晶溫度之上執行,從而使得包括經首先密封之彼等晶片的所有晶片共晶接合。尤其較佳地,位於加速度感測器之鍺框251下的高度藉由氧化物框151增大的表面形態對較高壓力下的氮最 初藉由熱壓接合圍封(較佳地在第一子步驟201中)產生影響,且接著當接合過程在真空下繼續時(較佳地在第二子步驟202中),旋轉速率感測器經共晶接合,其中加速度感測器亦經歷共晶反應。 In the case of the illustrative embodiment shown in Figure 3, prior to the
而且,在藉助於圖4中之實例展示的例示性具體實例之情況下,在第一子步驟201之前,較佳地在製備步驟200中,產生接合框拓樸,其中鋁變厚。較佳地,藉助於圖4中之實例展示的例示性具體實例之原理大體上對應於藉助於圖3中之實例展示的例示性具體實例之原理,其中在藉助於圖4中之實例展示的例示性具體實例之情況下,形成感測器邊鋁接合框,其高度藉由窄框而增大,該窄框同樣由鋁構成且位於接合框之下或鋁接合框之下。換言之,較佳地在第一子步驟201之前,第一鋁層以在基板晶圓30上形成第一鋁框131之方式沉積及建構於基板晶圓30上,且隨後第二鋁層以在基板晶圓30及第一鋁框131上形成第二鋁框231的方式沉積及建構於基板晶圓30及所建構之第一鋁層上或第一鋁框131上。換言之,藉助於圖4中之實例展示的第一基板框31包含第一鋁框131及第二鋁框231。在接合腔室或周圍空間7中執行壓力改變(較佳地自第一壓力改變至第二壓力)之前用第一壓力密封接合框高度增大的晶片或密封第一腔體11,且用第二壓力密封接合框高度未增大的其他晶片或用第二壓力密封第二腔體12。 Furthermore, in the case of the illustrative embodiment shown by means of the example in FIG. 4 , prior to the
此外,在藉助於圖5中之實例展示的例示性具體實例之情況下,在第一子步驟201之前,較佳地在製備步驟200中,在切割道中形成密封唇緣。此處,較佳地規定,基板器件3及/或蓋器件5以一方式建構,使得首先密封或圍封第一腔體11之晶片由密封唇緣53圍繞,該密封唇緣 處於切割道54中。換言之,基板器件3及/或蓋器件5較佳地以一方式建構,使得基板器件3及/或蓋器件5包含密封唇緣53,其中該密封唇緣53較佳配置於第一腔體11與第二腔體12之間。此外,在感測器側上,圍繞接合框的切割道54在具有氧化矽結構之蓋側上填充有鋁。較佳地,密封唇緣53包含氧化矽或氧化矽結構或切割道氧化物。而且,基板器件3較佳地以一方式進行建構,使得基板器件3在切割道54中包含結構55,其中結構55較佳包含鋁或切割道鋁。在接合期間或在第一子步驟201中,藉由將密封唇緣53壓至結構55中且將第一壓力圍封於第一腔體11中,用密封唇緣密封晶片或第一腔體11。在壓力改變之後或在已設定第二壓力及/或第二化學組成物之後,用第二壓力密封其他晶片或用第二壓力密封第二腔體12,且所有晶片或第一腔體11及第二腔體12藉由共晶接合緊緊密封(詳言之密閉性緊緊密封),較佳地在第二子步驟202中。 Furthermore, in the case of the illustrative embodiment shown by means of the example in FIG. 5 , before the
在藉助於圖6中之實例展示的例示性具體實例之情況下,在第一子步驟201之前,較佳地在製備步驟200中,於鋁接合框中產生表面形態。換言之,較佳地在第一子步驟201之前,第一鋁層以在基板晶圓30上形成第一鋁框131之方式沉積及建構於基板晶圓30上,且隨後第二鋁層以在基板晶圓30及第一鋁框131上形成第二鋁框231的方式沉積及建構於基板晶圓30及所建構之第一鋁層上或第一鋁框131上。較佳地,在第一子步驟201之前,在感測器邊或基板晶圓上應用鋁框,該鋁框較佳地在較佳地平行於基板範圍主平面100的平面中圍封經配置於基板晶圓30上及第一腔體11中的微機械結構,且與蓋邊密封玻璃接合框相對或與第一蓋框51及第二蓋框52相對,其中第一蓋框51及第二蓋框52較佳地分別包含密封 玻璃接合框。在晶片首先用第一壓力密封或圍封第一腔體11之情況下,第一基板框31(其較佳包含鋁框)相比於第二基板框32高度增大。此變體在兩階段過程中用密封玻璃接合。換言之,基板器件3及蓋器件5在子步驟201中且在第二子步驟202中藉由密封玻璃接合彼此連接。此處,較佳地首先軟化第一蓋框51(其包含密封玻璃)及第二蓋框52(其包含密封玻璃)。隨後,第一蓋框51抵靠著第一基板框31,較佳地在移動步驟中或在其結束處。此處,晶片或第一腔體11圍封第一壓力。在壓力改變之後或在已設定第二壓力及/或第二化學組成物之後,基板器件3與蓋器件5之間的按壓力增大,從而使得高度增大的沒有鋁框之其他晶片在第二壓力下接合,或從而使得第二腔體12相對於周圍空間7且相對於第一腔體11閉合(詳言之,密閉性閉合)。 In the case of the illustrative embodiment shown by means of the example in FIG. 6 , prior to the
而且,在藉助於圖7中之實例展示的例示性具體實例之情況下,在Al接合框或第一基板框31及第二基板框32中具有或不具有打開區域之情況下執行共晶接合。較佳地,在第一子步驟201之前,尤其較佳地在製備步驟200中,此處形成第一基板框31,其在平行於基板範圍主平面100的平面300中完全圍封第一腔體11。此外,較佳地在第一子步驟201之前,尤其較佳地在製備步驟200中,形成第二基板框32,其在平行於基板範圍主平面100的平面300中僅僅部分圍封第二腔體12。此處較佳地提供意欲圍封第一壓力或圍封第一腔體11的晶片具有以標準方式組態之接合框。僅僅在接合過程之第二步中用第二壓力密封或圍封第二腔體12的彼等晶片在感測器邊鋁接合框中具備間隙。換言之,第二基板框32包含間隙或空隙40、41、42、43。間隙或空隙40、41、42、43並不在接合期間或在第一子步驟201中即刻閉合,從而使得可在接合過程期間或在第二子步驟202中執行壓力改變,或一旦晶片已經在第一壓力下用標準接合框密封,或已形成相對於微機械構件1之周圍空間7閉合(詳言之,密閉性閉合)的第一腔體11,但在其他晶片或第二基板框32之間隙或空隙40、41、42、43填充有流動共晶之前,可設定第二壓力及/或第二化學組成物。因此,間隙圍封第二壓力之晶片或基板器件3及蓋器件5以一方式彼此連接,以便形成相對於微機械構件1之周圍空間7且相對於第一腔體11閉合(詳言之,密閉性閉合)的第二腔體12,其中第二壓力占主導及/或第二化學組成物圍封於第二腔體12中。
Also, in the case of the illustrative embodiment shown by means of the example in FIG. 7 , the eutectic bonding is performed with or without open regions in the Al bonding frame or the
200‧‧‧製備步驟 200‧‧‧Preparation steps
201‧‧‧第一子步驟 201‧‧‧First sub-step
202‧‧‧第二子步驟 202‧‧‧Second sub-step
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