TWI752204B - Antistatic film, polarizing plate, touch panel and liquid crystal display device - Google Patents
Antistatic film, polarizing plate, touch panel and liquid crystal display device Download PDFInfo
- Publication number
- TWI752204B TWI752204B TW107110448A TW107110448A TWI752204B TW I752204 B TWI752204 B TW I752204B TW 107110448 A TW107110448 A TW 107110448A TW 107110448 A TW107110448 A TW 107110448A TW I752204 B TWI752204 B TW I752204B
- Authority
- TW
- Taiwan
- Prior art keywords
- antistatic
- film
- layer
- liquid crystal
- acrylate
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/16—Optical coatings produced by application to, or surface treatment of, optical elements having an anti-static effect, e.g. electrically conducting coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Polarising Elements (AREA)
- Liquid Crystal (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
一種抗靜電薄膜,其係包含「由包含含有脂環結構之聚合物的熱塑性樹脂而成的基材薄膜」與「設置於基材薄膜上的抗靜電層」的抗靜電薄膜,其中前述抗靜電層包含丙烯酸酯系黏合劑組成物與金屬氧化物粒子,且前述抗靜電層中的殘留雙鍵率Dre滿足2.5<Dre<6.1。其中,Dre=AC - H /AC = O ×Wa/(Wa+Wm)×100。包含該抗靜電薄膜的偏光板、觸控面板及液晶顯示裝置。An antistatic film comprising "a base film made of a thermoplastic resin containing a polymer containing an alicyclic structure" and "an antistatic layer disposed on the base film", wherein the aforementioned antistatic film The layer includes an acrylate-based binder composition and metal oxide particles, and the residual double bond ratio Dre in the antistatic layer satisfies 2.5<Dre<6.1. Here, Dre=A C − H /A C = O ×Wa/(Wa+Wm)×100. A polarizing plate, a touch panel and a liquid crystal display device comprising the antistatic film are provided.
Description
本發明係關於抗靜電薄膜、偏光板、觸控面板及液晶顯示裝置。The present invention relates to an antistatic film, a polarizing plate, a touch panel and a liquid crystal display device.
液晶顯示裝置具有高畫質、薄型、輕量、低電力消耗等優點,廣泛使用於例如電視、個人電腦、行車導航等。在液晶顯示裝置中,將液晶晶胞配置於以穿透軸正交的方式配置之2片偏光件(亦即,入射側偏光件及出射側偏光件)之間,藉由對於液晶晶胞施加電壓而使液晶分子的配向變化,使畫面顯示影像。Liquid crystal display devices have the advantages of high image quality, thin shape, light weight, and low power consumption, and are widely used in, for example, televisions, personal computers, and car navigation. In the liquid crystal display device, the liquid crystal cell is arranged between two polarizers (ie, the incident-side polarizer and the output-side polarizer) arranged in such a manner that the transmission axes are perpendicular to each other. The voltage changes the alignment of the liquid crystal molecules to display images on the screen.
並且,近年來於例如手機、平板型個人電腦等可攜式終端中,日益廣泛使用具備觸控面板的液晶顯示裝置。在具備觸控面板的液晶顯示裝置中,偶有因使用者觸碰觸控面板而電荷囤積於構成液晶顯示裝置的部件的情況。如此囤積之電荷或有引起觸控面板的故障或擾亂液晶晶胞之液晶分子的驅動控制造成畫質降低的可能。於是,為了控制如前所述之電荷的囤積,考量將抗靜電薄膜設置於液晶顯示裝置。In addition, in recent years, in portable terminals such as mobile phones and tablet personal computers, liquid crystal display devices including touch panels have been widely used. In a liquid crystal display device including a touch panel, electric charges may be accumulated in components constituting the liquid crystal display device when a user touches the touch panel. Such accumulated charges may cause malfunction of the touch panel or disturb the driving control of the liquid crystal molecules of the liquid crystal cell, resulting in a reduction in image quality. Therefore, in order to control the accumulation of electric charges as described above, it is considered to provide an antistatic film on the liquid crystal display device.
專利文獻1中記載了具備基材薄膜與抗靜電層並將霧度值與表面電阻值設為指定範圍的抗靜電薄膜。
『專利文獻』 《專利文獻1》:國際公開第2016/063793號(對應公報:美國專利申請公開第2017/238403號說明書)"Patent Document" "
為了抑制觸控面板的故障並進一步有效抑制液晶晶胞的液晶分子之驅動控制的錯亂以獲得良好畫質,抗靜電薄膜一般設置擴及液晶顯示裝置的整體顯示範圍。因此,使用者透過抗靜電薄膜觀看液晶顯示裝置所顯示之影像。故抗靜電薄膜以透明性高為佳。In order to suppress the failure of the touch panel and further effectively suppress the disorder of the driving control of the liquid crystal molecules of the liquid crystal cell to obtain good image quality, the antistatic film is generally provided to extend the entire display range of the liquid crystal display device. Therefore, the user watches the image displayed by the liquid crystal display device through the antistatic film. Therefore, the antistatic film with high transparency is better.
然而,若如專利文獻1之技術將霧度值與表面電阻值設為指定範圍而希圖兼備優異透明性與抗靜電性,則有抗靜電薄膜之耐光性惡化的情況,且有將抗靜電薄膜曝露於紫外線後的電阻值與曝露前的電阻值相較之下大幅上升的情況。However, if the haze value and the surface resistance value are set to specified ranges as in the technique of
本發明係有鑑於上述而完成者,其目的在於提供:霧度值低而透明性良好,同時抗靜電性良好且耐光性優異的抗靜電薄膜、包含該抗靜電薄膜的偏光板、包含該偏光板的液晶顯示裝置、包含該抗靜電薄膜的觸控面板、進一步包含含有該抗靜電薄膜之觸控面板的液晶顯示裝置。The present invention has been made in view of the above, and an object of the present invention is to provide an antistatic film having a low haze value, good transparency, good antistatic properties and excellent light resistance, a polarizing plate comprising the antistatic film, and a polarizing plate comprising the polarized light. A liquid crystal display device of a panel, a touch panel including the antistatic film, and a liquid crystal display device further including a touch panel including the antistatic film.
本發明人等專心致志研究的結果,發現抗靜電薄膜的耐光性係與抗靜電層中的殘留雙鍵率及金屬氧化物粒子的含有率相關連,完成本發明。As a result of intensive research, the present inventors found that the light resistance of the antistatic film is related to the residual double bond ratio in the antistatic layer and the content ratio of metal oxide particles, and completed the present invention.
亦即,本發明如同下述。That is, the present invention is as follows.
〔1〕一種抗靜電薄膜,其係 包含基材薄膜與 設置於基材薄膜上之抗靜電層的 觸控面板所使用之抗靜電薄膜,其中 前述抗靜電層包含丙烯酸酯系黏合劑組成物與金屬氧化物粒子, 前述抗靜電層滿足式2.5<Dre<6.1, 前述抗靜電層中的前述金屬氧化物粒子之相對於前述丙烯酸酯系黏合劑組成物的重量比為27重量%以上200重量%以下, Dre係藉由式Dre=((AC - H /AC = O )×(Wa/(Wa+Wm)))×100所定義之前述抗靜電層的殘留雙鍵率, AC - H 係前述抗靜電層之紅外線吸收光譜中的丙烯酸酯結構所具有之C-H鍵結的面外彎曲振動相關的紅外線吸收, AC = O 係前述抗靜電層之紅外線吸收光譜中的丙烯酸酯結構所具有之C=O鍵結的伸縮振動相關的紅外線吸收與源自丙烯酸酯結構之C=O鍵結的C=O鍵結的伸縮振動相關的紅外線吸收之和, Wa係單位體積之前述抗靜電層中之丙烯酸酯系黏合劑組成物的重量, Wm係單位體積之前述抗靜電層中之金屬氧化物粒子的重量。[1] An antistatic film, which is an antistatic film used in a touch panel comprising a base film and an antistatic layer disposed on the base film, wherein the antistatic layer comprises an acrylate-based adhesive composition and a Metal oxide particles, the antistatic layer satisfies Formula 2.5<Dre<6.1, and the weight ratio of the metal oxide particles in the antistatic layer to the acrylate-based adhesive composition is 27% by weight or more and 200% by weight or less, Dre by formula based Dre = ((a C - H / a C = O) × (Wa / (Wa + Wm))) of the residual double bond in the antistatic layer as defined in the × 100, a C - H system The infrared absorption related to the out-of-plane bending vibration of the C-H bond of the acrylate structure in the infrared absorption spectrum of the antistatic layer, A C = O is the acrylate structure in the infrared absorption spectrum of the antistatic layer. The sum of the infrared absorption related to the stretching vibration of the C=O bond with the C=O bond and the infrared absorption related to the stretching vibration of the C=O bond derived from the C=O bond of the acrylate structure, Wa is the aforementioned antistatic per unit volume The weight of the acrylate-based adhesive composition in the layer, Wm is the weight of the metal oxide particles in the aforementioned antistatic layer per unit volume.
〔2〕如〔1〕所記載之抗靜電薄膜,其中前述抗靜電層具有單層結構, 前述抗靜電層的厚度為0.5μm以上10.0μm以下。[2] The antistatic film according to [1], wherein the antistatic layer has a single-layer structure, and the thickness of the antistatic layer is 0.5 μm or more and 10.0 μm or less.
〔3〕如〔1〕或〔2〕所記載之抗靜電薄膜,其中前述抗靜電層的表面電阻值為1.0×106 Ω/□以上7.0×108 Ω/□以下。[3] The antistatic film according to [1] or [2], wherein the antistatic layer has a surface resistance value of 1.0×10 6 Ω/□ or more and 7.0×10 8 Ω/□ or less.
〔4〕如〔1〕~〔3〕中之任一項所記載之抗靜電薄膜,其中前述抗靜電層之透過紫外線照射的耐光性試驗後的電阻值變化率為1.0以上且未達4.7。[4] The antistatic film according to any one of [1] to [3], wherein the resistance value change ratio of the antistatic layer after a light resistance test through ultraviolet irradiation is 1.0 or more and less than 4.7.
〔5〕如〔1〕~〔4〕中之任一項所記載之抗靜電薄膜,其中該抗靜電層與該基材薄膜之折射率差的絕對值為0.1以下。[5] The antistatic film according to any one of [1] to [4], wherein the absolute value of the difference in refractive index between the antistatic layer and the base film is 0.1 or less.
〔6〕如〔1〕~〔5〕中之任一項所記載之抗靜電薄膜,其中霧度值為0.3%以下,全光線穿透率為85%以上。[6] The antistatic film according to any one of [1] to [5], wherein the haze value is 0.3% or less, and the total light transmittance is 85% or more.
〔7〕如〔1〕~〔6〕中之任一項所記載之抗靜電薄膜,其中前述基材薄膜係由包含含有脂環結構之聚合物的熱塑性樹脂而成的基材薄膜。[7] The antistatic film according to any one of [1] to [6], wherein the base film is a base film made of a thermoplastic resin containing a polymer containing an alicyclic structure.
〔8〕如〔1〕~〔7〕中之任一項所記載之抗靜電薄膜,其中前述基材薄膜依序具備第一表面層、中間層及第二表面層,其中 前述中間層包含紫外線吸收劑, 前述基材薄膜的厚度為10μm以上60μm以下, 前述基材薄膜的波長380nm的光線穿透率為10%以下。[8] The antistatic film according to any one of [1] to [7], wherein the base film has a first surface layer, an intermediate layer and a second surface layer in this order, wherein the intermediate layer contains ultraviolet rays For the absorber, the thickness of the base film is 10 μm or more and 60 μm or less, and the light transmittance of the base film at a wavelength of 380 nm is 10% or less.
〔9〕如〔1〕~〔8〕中之任一項所記載之抗靜電薄膜,其中前述基材薄膜為斜向延伸薄膜。[9] The antistatic film according to any one of [1] to [8], wherein the base film is an obliquely stretched film.
〔10〕如〔9〕所記載之抗靜電薄膜,其中該基材薄膜滿足下述1及2, 1)在波長550nm的面內延遲為80至180nm, 2)遲相軸相對於長邊方向為45°±5°。[10] The antistatic film according to [9], wherein the base film satisfies the following 1 and 2, 1) the in-plane retardation at a wavelength of 550 nm is 80 to 180 nm, and 2) the retardation axis is relative to the longitudinal direction is 45°±5°.
〔11〕如〔1〕~〔10〕中之任一項所記載之抗靜電薄膜,其係輥狀的薄膜。[11] The antistatic film according to any one of [1] to [10], which is a roll-shaped film.
〔12〕一種偏光板,其包含如〔1〕~〔11〕中之任一項所記載之抗靜電薄膜。[12] A polarizing plate comprising the antistatic film according to any one of [1] to [11].
〔13〕一種觸控面板,其包含如〔1〕~〔11〕中之任一項所記載之抗靜電薄膜與觸控面板部件。[13] A touch panel comprising the antistatic film and touch panel member according to any one of [1] to [11].
〔14〕一種觸控面板,其包含如〔12〕所記載之偏光板與觸控面板部件。[14] A touch panel comprising the polarizing plate and touch panel member as described in [12].
〔15〕一種液晶顯示裝置,其包含如〔1〕~〔11〕中之任一項所記載之抗靜電薄膜與觸控面板部件。[15] A liquid crystal display device comprising the antistatic film and touch panel member according to any one of [1] to [11].
〔16〕一種液晶顯示裝置,其包含如〔12〕所記載之偏光板。[16] A liquid crystal display device comprising the polarizing plate according to [12].
〔17〕一種液晶顯示裝置,其包含如〔13〕或〔14〕所記載之觸控面板。[17] A liquid crystal display device comprising the touch panel according to [13] or [14].
〔18〕如〔15〕至〔17〕中之任一項所記載之液晶顯示裝置,其中前述液晶顯示裝置的液晶晶胞與前述抗靜電層接通。[18] The liquid crystal display device according to any one of [15] to [17], wherein a liquid crystal cell of the liquid crystal display device is connected to the antistatic layer.
〔19〕如〔15〕至〔18〕中之任一項所記載之液晶顯示裝置,其中前述液晶顯示裝置為IPS式。[19] The liquid crystal display device according to any one of [15] to [18], wherein the liquid crystal display device is an IPS type.
根據本發明,可提供:霧度值低而透明性良好,同時抗靜電性良好且耐光性優異的抗靜電薄膜、包含該抗靜電薄膜的偏光板、包含該偏光板的液晶顯示裝置、包含該抗靜電薄膜的觸控面板、進一步包含含有該抗靜電薄膜之觸控面板的液晶顯示裝置。According to the present invention, it is possible to provide an antistatic film having a low haze value, good transparency, good antistatic properties and excellent light resistance, a polarizing plate including the antistatic film, a liquid crystal display device including the polarizing plate, and a liquid crystal display device including the polarizing plate. The touch panel of the antistatic film further comprises a liquid crystal display device containing the touch panel of the antistatic film.
以下針對本發明揭示實施型態及示例物以詳細說明。惟本發明並非限定於以下所揭示之實施型態及示例物者,在不脫離本發明之專利申請範圍及其均等之範圍中,得任意變更而實施。The following describes the embodiments and examples of the present invention in detail. However, the present invention is not limited to the embodiments and examples disclosed below, and can be implemented with arbitrary changes without departing from the scope of the patent application of the present invention and its equivalent scope.
於以下之說明中,所謂「長條狀」的薄膜,係指相對於幅寬具有5倍以上之長度的薄膜,以具有10倍或以上之長度為佳,具體而言係指具有收捲成輥狀以儲存或運輸程度之長度的薄膜。長條狀薄膜的長度上限並無特別限定,舉例而言,得定為10萬倍以下。In the following description, the so-called "long-shaped" film refers to a film having a length of 5 times or more relative to the width, preferably 10 times or more in length. Rolled lengths of film for storage or transport. The upper limit of the length of the elongated film is not particularly limited, but, for example, it may be set to 100,000 times or less.
於以下之說明中,除非另有註明,否則薄膜之面內延遲Re表示係以Re=(nx-ny)×d所示之值。並且,除非另有註明,否則薄膜之厚度方向的延遲Rth係以Rth=[(nx+ny)/2-nz]×d所示之值。於此,nx代表垂直於薄膜之厚度方向的方向(面內方向)且為賦予最大折射率之方向的折射率,ny代表前述面內方向且為正交於nx方向之方向的折射率,nz代表厚度方向的折射率,d代表層體的厚度。除非另有註明,否則量測波長為550nm。In the following description, unless otherwise noted, the in-plane retardation Re of the film is represented by the value represented by Re=(nx−ny)×d. In addition, unless otherwise specified, the retardation Rth in the thickness direction of the film is a value represented by Rth=[(nx+ny)/2−nz]×d. Here, nx represents the direction perpendicular to the thickness direction of the film (in-plane direction) and is the refractive index in the direction giving the maximum refractive index, ny represents the in-plane direction and is the refractive index in the direction orthogonal to the nx direction, nz represents the refractive index in the thickness direction, and d represents the thickness of the layer. Unless otherwise noted, the measurement wavelength is 550nm.
於以下之說明中,除非另有註明,否則所謂要素之方向為「平行」、「垂直」以及「正交」,在不損害本發明之效果的範圍內,亦可包含例如在±5°之範圍內的誤差。In the following description, unless otherwise specified, the so-called directions of elements are "parallel", "perpendicular" and "orthogonal", and within the scope of not impairing the effect of the present invention, for example, the directions of ±5° may be included. error within the range.
於以下之說明中,長條狀薄膜之長邊方向,通常與生產線上之薄膜的流動方向平行。In the following description, the longitudinal direction of the elongated film is generally parallel to the flow direction of the film on the production line.
於以下之說明中,除非另有註明,否則所謂「偏光板」以及「1/4板」,不僅包含剛性的部件,亦包含例如像樹脂製之薄膜般具有可撓性的部件。In the following description, unless otherwise specified, the so-called "polarizing plate" and "1/4 plate" include not only rigid members but also flexible members such as resin films.
於以下之說明中,除非另有註明,否則具備多數薄膜之部件中之各薄膜的光學軸(偏光件的穿透軸、相位差薄膜的遲相軸等)所成之角度表示自厚度方向觀看前述薄膜時的角度。In the following description, unless otherwise specified, the angles formed by the optical axes of each film (the transmission axis of the polarizer, the retardation axis of the retardation film, etc.) in the components with many films are shown from the thickness direction. The angle of the aforementioned film.
於以下之說明中,除非另有註明,否則所謂接合劑不僅包含狹義的接合劑(照射能量線後或者加熱處理後,於23℃的剪切儲存彈性模數為1MPa~500MPa的接合劑),亦包含於23℃的剪切儲存彈性模數未達1MPa的黏合劑。In the following description, unless otherwise specified, the so-called bonding agent includes not only the bonding agent in the narrow sense (the bonding agent with a shear storage elastic modulus of 1MPa to 500MPa at 23°C after irradiation with energy rays or after heat treatment), Also included are adhesives with a shear storage elastic modulus of less than 1 MPa at 23°C.
於以下之說明中,除非另有註明,否則所謂薄膜之遲相軸表示該薄膜之面內的遅相軸。In the following description, unless otherwise noted, the so-called slow axis of a thin film refers to the in-plane elliptic axis of the thin film.
[1.抗靜電薄膜之概要][1. Outline of antistatic film]
本發明之抗靜電薄膜包含基材薄膜與設置於基材薄膜上的抗靜電層。The antistatic film of the present invention comprises a base film and an antistatic layer disposed on the base film.
圖1係概略揭示本發明之抗靜電薄膜之一實施型態的截面圖。FIG. 1 is a cross-sectional view schematically showing an embodiment of the antistatic film of the present invention.
如圖1所示,本實施型態之抗靜電薄膜100包含基材薄膜110與設置於此基材薄膜110上的抗靜電層120。雖然在本實施型態中,抗靜電層120直接設置於基材薄膜110的表面上,但於基材薄膜與抗靜電層之間亦可中介任意層。As shown in FIG. 1 , the
[2.基材薄膜][2. Substrate film]
作為基材薄膜,得適當選擇使用得使用作為光學上之堆疊體的基材的薄膜。其中,就能將具備基材薄膜及抗靜電層的抗靜電薄膜作為光學薄膜利用的觀點而言,作為基材薄膜,以透明的薄膜為佳。具體而言,基材薄膜的全光線穿透率以80%以上為佳,以85%以上為較佳,尤以88%以上為佳。As the base film, a film to be used as a base material of an optically stacked body should be appropriately selected and used. Among them, from the viewpoint that the antistatic film including the base film and the antistatic layer can be used as an optical film, a transparent film is preferable as the base film. Specifically, the total light transmittance of the base film is preferably above 80%, preferably above 85%, and particularly preferably above 88%.
基材薄膜的材料並未特別限定,得使用各式各樣的樹脂。作為樹脂之例,可列舉包含各種聚合物的樹脂。作為該聚合物,可列舉:具有脂環結構的聚合物、纖維素酯、聚酯、聚乙烯醇、聚醯亞胺、UV穿透丙烯酸酯、聚碳酸酯、聚碸、聚醚碸、環氧聚合物、聚苯乙烯及此等的組合。此等之中,就透明性的觀點而言,以具有脂環結構的聚合物及纖維素酯為佳,其中就透明性、低吸濕性、尺寸穩定性、輕量性等觀點而言,以具有脂環結構的聚合物為較佳。The material of the base film is not particularly limited, and various resins can be used. Examples of resins include resins containing various polymers. Examples of the polymer include polymers having an alicyclic structure, cellulose esters, polyesters, polyvinyl alcohols, polyimides, UV-transmitting acrylates, polycarbonates, polysiloxanes, polyethersiloxanes, cyclic Oxypolymers, polystyrene, and combinations of these. Among them, from the viewpoint of transparency, polymers having an alicyclic structure and cellulose esters are preferred, and among them, from the viewpoints of transparency, low hygroscopicity, dimensional stability, light weight, and the like, A polymer having an alicyclic structure is preferred.
具有脂環結構的聚合物,其聚合物的結構單元具有脂環結構。具有脂環結構的聚合物,可於主鏈具有脂環結構,亦可於側鏈具有脂環結構。其中,就機械強度及耐熱性的觀點而言,以於主鏈具有脂環結構的聚合物為佳。A polymer having an alicyclic structure, the structural unit of the polymer has an alicyclic structure. A polymer having an alicyclic structure may have an alicyclic structure in the main chain or may have an alicyclic structure in the side chain. Among them, from the viewpoints of mechanical strength and heat resistance, polymers having an alicyclic structure in the main chain are preferred.
作為脂環結構,可列舉例如:飽和脂環烴(環烷)結構、不飽和脂環烴(環烯、環炔)結構等。其中,就例如機械強度、耐熱性等觀點而言,以環烷結構及環烯結構為佳,其中尤以環烷結構為佳。As an alicyclic structure, a saturated alicyclic hydrocarbon (cycloalkane) structure, an unsaturated alicyclic hydrocarbon (cycloalkene, cycloalkyne) structure etc. are mentioned, for example. Among them, the cycloalkane structure and the cycloalkene structure are preferable from the viewpoints of, for example, mechanical strength, heat resistance, and the like, and among them, the cycloalkane structure is especially preferable.
構成脂環結構的碳原子數,每一個脂環結構,其範圍以4個以上為佳,以5個以上為較佳,且以30個以下為佳,以20個以下為較佳,尤以15個以下為佳。藉由將構成脂環結構的碳原子數設在此範圍,可使包含具有該脂環結構之聚合物的熱可塑性樹脂之機械強度、耐熱性及成形性取得高度平衡。The number of carbon atoms constituting the alicyclic structure, each alicyclic structure, its range is preferably 4 or more, preferably 5 or more, and preferably 30 or less, preferably 20 or less, especially 15 or less is better. By setting the number of carbon atoms constituting the alicyclic structure within this range, the mechanical strength, heat resistance, and moldability of the thermoplastic resin containing the polymer having the alicyclic structure can be highly balanced.
在具有脂環結構的聚合物中,具有脂環結構的結構單元的比例得依使用目的而適當選擇。具有脂環結構的聚合物中之具有脂環結構的結構單元的比例以55重量%以上為佳,以70重量%以上為更佳,尤以90重量%以上為佳。若具有脂環結構的聚合物中之具有脂環結構的結構單元的比例在此範圍內,則包含具有該脂環結構之聚合物的熱可塑性樹脂之透明性及耐熱性良好。In the polymer having an alicyclic structure, the ratio of the structural unit having an alicyclic structure is appropriately selected according to the purpose of use. The proportion of the structural unit having an alicyclic structure in the polymer having an alicyclic structure is preferably 55% by weight or more, more preferably 70% by weight or more, and particularly preferably 90% by weight or more. When the ratio of the structural unit which has an alicyclic structure in the polymer which has an alicyclic structure is in this range, the transparency and heat resistance of the thermoplastic resin containing the polymer which has this alicyclic structure are favorable.
作為具有脂環結構的聚合物,可列舉例如:降𦯉烯系聚合物、單環的環烯烴系聚合物、環狀共軛二烯系聚合物及此等的氫化物等。此等之中,降𦯉烯系聚合物由於成形性良好,故尤為合適。並且,具有脂環結構的聚合物可單獨使用1種,亦可以任意比例組合2種以上使用。Examples of the polymer having an alicyclic structure include noralkene-based polymers, monocyclic cycloolefin-based polymers, cyclic conjugated diene-based polymers, and hydrogenated products thereof. Among these, noralkene-based polymers are particularly suitable because of their good moldability. Moreover, the polymer which has an alicyclic structure may be used individually by 1 type, and may be used in combination of 2 or more types in arbitrary ratios.
作為降𦯉烯系聚合物,得使用例如:日本專利公開第H3-14882號公報、日本專利公開第H3-122137號公報、日本專利公開第H4-63807號公報等所記載者。作為降𦯉烯系聚合物的具體例,可列舉:具有降𦯉烯結構之單體的開環聚合物及其氫化物;具有降𦯉烯結構之單體的加成聚合物及其氫化物;以及此等之改質物。於以下之說明中,有時將具有降𦯉烯結構的單體稱為「降𦯉烯系單體」。作為降𦯉烯系單體的開環聚合物之例,可列舉:具有降𦯉烯結構之1種單體的開環均聚物、具有降𦯉烯結構之2種以上之單體的開環共聚物,以及降𦯉烯系單體及得與之共聚合之其他單體的開環共聚物。再者,作為降𦯉烯系單體的加成聚合物之例,可列舉:具有降𦯉烯結構之1種單體的加成均聚物、具有降𦯉烯結構之2種以上之單體的加成共聚物,以及降𦯉烯系單體及得與之共聚合之其他單體的加成共聚物。此等之中,降𦯉烯系單體的開環聚合物的氫化物,就成形性、耐熱性、低吸濕性、尺寸穩定性、輕量性等觀點而言,尤為合適。As the noralkene-based polymer, for example, those described in Japanese Patent Laid-Open No. H3-14882, Japanese Patent Laid-Open No. H3-122137, and Japanese Patent Laid-Open No. H4-63807 can be used. Specific examples of the noralkene-based polymer include ring-opening polymers of monomers having a noralkene structure and hydrogenated products thereof; addition polymers of monomers having a noralkene structure and hydrogenated products thereof; and such modifications. In the following description, a monomer having a noralkene structure may be referred to as a "noralkene-based monomer". Examples of the ring-opening polymer of the noralkene-based monomer include a ring-opening homopolymer of one monomer having a noralkene structure, and a ring-opening homopolymer of two or more monomers having a noralkene structure. Copolymers, and ring-opening copolymers of noralkene-based monomers and other monomers with which they can be copolymerized. In addition, as an example of the addition polymer of the noralkene-based monomer, an addition homopolymer of one kind of monomer having a noralkene structure, and two or more kinds of monomers having a noralkene structure can be mentioned. Addition copolymers of alkenes, as well as addition copolymers of noralkene-based monomers and other monomers that can be copolymerized with them. Among these, a hydrogenated product of a ring-opening polymer of a noralkene-based monomer is particularly suitable from the viewpoints of moldability, heat resistance, low hygroscopicity, dimensional stability, and light weight.
作為降𦯉烯系單體,可列舉例如:降𦯉烯;降𦯉烯的烷基取代衍生物;降𦯉烯的亞烷基取代衍生物;降𦯉烯的芳族取代衍生物;以及此等的極性基取代物等。於此作為極性基,可列舉例如:鹵素、羥基、酯基、烷氧基、氰基、醯胺基、醯亞胺基、矽基等。此等可單獨使用1種,亦可以任意比率組合2種以上使用。作為此種降𦯉烯系單體之具體例,可列舉:2-降𦯉烯、5-甲基-2-降𦯉烯、5,5-二甲基-2-降𦯉烯、5-乙基-2-降𦯉烯、5-丁基-2-降𦯉烯、5-亞乙基-2-降𦯉烯、5-甲氧基羰基-2-降𦯉烯、5-氰基-2-降𦯉烯、5-甲基-5-甲氧基羰基-2-降𦯉烯、5-苯基-2-降𦯉烯、5-苯基-5-甲基-2-降𦯉烯、5-己基-2-降𦯉烯、5-辛基-2-降𦯉烯、5-十八基-2-降𦯉烯等。Examples of noralkene-based monomers include: noralkene; alkyl substituted derivatives of noralkene; alkylene substituted derivatives of noralkene; aromatic substituted derivatives of noralkene; and the like polar substituents, etc. Here, as a polar group, a halogen, a hydroxyl group, an ester group, an alkoxy group, a cyano group, an imido group, an imino group, a silicon group, etc. are mentioned, for example. These may be used individually by 1 type, and may be used in combination of 2 or more types at arbitrary ratios. Specific examples of such a noralkene-based monomer include 2-noralkene, 5-methyl-2-noralkene, 5,5-dimethyl-2-noralkene, and 5-ethyl yl-2-nor𦯉ene, 5-butyl-2-nor𦯉ene, 5-ethylidene-2-nor𦯉ene, 5-methoxycarbonyl-2-nor𦯉ene, 5-cyano-2 -nor𦯉ene, 5-methyl-5-methoxycarbonyl-2-nor𦯉ene, 5-phenyl-2-nor𦯉ene, 5-phenyl-5-methyl-2-nor𦯉ene, 5-hexyl-2-nor𦯉ene, 5-octyl-2-nor𦯉ene, 5-octadecyl-2-nor𦯉ene, etc.
並且,作為降𦯉烯系單體,可列舉例如:於降𦯉烯加成一個以上環戊二烯的單體;此單體的烷基取代衍生物;此單體的亞烷基取代衍生物;此單體的芳族取代衍生物;以及此等的極性基取代物等。作為此種降𦯉烯系單體之具體例,可列舉:1,4:5,8-二甲橋-1,2,3,4,4a,5,8,8a-八氫-2,3-環戊二烯并萘、6-甲基-1,4:5,8-二甲橋-1,4,4a,5,6,7,8,8a-八氫萘、1,4:5,10:6,9-三甲橋-1,2,3,4,4a,5,5a,6,9,9a,10,10a-十二氫-2,3-環戊二烯并蒽等。In addition, examples of noralkene-based monomers include monomers in which one or more cyclopentadienes are added to noralkenes; alkyl-substituted derivatives of the monomers; alkylene-substituted derivatives of the monomers ; aromatic substituted derivatives of this monomer; and polar substituents of these, etc. Specific examples of such noralkene-based monomers include 1,4:5,8-dimethylbridge-1,2,3,4,4a,5,8,8a-octahydro-2,3 -Cyclopentadienonaphthalene, 6-methyl-1,4:5,8-dimethylbridge-1,4,4a,5,6,7,8,8a-octahydronaphthalene, 1,4:5 , 10:6,9-Trimethyl bridge-1,2,3,4,4a,5,5a,6,9,9a,10,10a-dodecahydro-2,3-cyclopentadienanthracene and so on.
再者,作為降𦯉烯系單體,可列舉例如:係為環戊二烯的多聚物之多環結構的單體;此單體的烷基取代衍生物;此單體的亞烷基取代衍生物;此單體的芳族取代衍生物;以及此等的極性基取代物等。作為此種降𦯉烯系單體之具體例,可列舉:二環戊二烯、2,3-二氫二環戊二烯等。Furthermore, as the noralkene-based monomer, for example, a monomer having a polycyclic structure which is a polymer of cyclopentadiene; an alkyl-substituted derivative of the monomer; an alkylene group of the monomer Substituted derivatives; aromatic substituted derivatives of this monomer; and polar substituents of these, etc. Specific examples of such a noralkene-based monomer include dicyclopentadiene, 2,3-dihydrodicyclopentadiene, and the like.
並且,作為降𦯉烯系單體,可列舉例如:環戊二烯與四氫茚的加成物;此加成物的烷基取代衍生物;此加成物的亞烷基取代衍生物;此加成物的芳族取代衍生物;以及此等的極性基取代物等。作為此種降𦯉烯系單體之具體例,可列舉:1,4-甲橋-1,4,4a,4b,5,8,8a,9a-八氫茀、5,8-甲橋-1,2,3,4,4a,5,8,8a-八氫-2,3-環戊二烯并萘等。In addition, examples of noralkene-based monomers include adducts of cyclopentadiene and tetrahydroindene; alkyl-substituted derivatives of the adducts; alkylene-substituted derivatives of the adducts; Aromatic substituted derivatives of this adduct; and polar substituents of these, and the like. Specific examples of such noralkene-based monomers include 1,4-methano-1,4,4a,4b,5,8,8a,9a-octahydro-, 5,8-methano- 1,2,3,4,4a,5,8,8a-octahydro-2,3-cyclopentadienonaphthalene, etc.
降𦯉烯系單體可單獨使用1種,亦可以任意比率組合2種以上使用。The noralkene-based monomer may be used alone or in combination of two or more at any ratio.
降𦯉烯系聚合物之中,作為結構單元,較佳為:具有X:雙環[3.3.0]辛烷-2,4-二基-乙烯結構與Y:參環[4.3.0.12,5 ]癸烷-7,9-二基-乙烯結構,此等結構單元的含量,相對於降𦯉烯系聚合物之結構單元整體,為90重量%以上,且X之含有比例與Y之含有比例的比以X:Y的重量比為100:0~40:60者。藉由使用此種聚合物,可獲得長久上無尺寸變化、光學特性的穩定性優異的基材薄膜。Among the noralkene-based polymers, as structural units, those having X: bicyclo[3.3.0]octane-2,4-diyl-ethene structure and Y: paracyclo[4.3.0.1 2,5 ] Decane-7,9-diyl-ethylene structure, the content of these structural units is 90% by weight or more relative to the entire structural unit of the noralkene-based polymer, and the content ratio of X and the content ratio of Y The ratio of X:Y weight ratio is 100:0 ~ 40:60. By using such a polymer, a base film having no dimensional change over a long period and excellent stability of optical properties can be obtained.
作為具有X之結構作為結構單元的單體,可列舉例如:具有在降𦯉烯環上鍵結有五員環的結構的降𦯉烯系單體。作為其具體例,可列舉:參環[4.3.0.12,5 ]癸-3,7-二烯(慣用名:二環戊二烯)及其衍生物(在環上具有取代基者)、7,8-苯并三環[4.3.0.12,5 ]癸-3-烯(慣用名:甲橋四氫茀)及其衍生物。並且,作為具有Y之結構作為結構單元的單體,可列舉例如:肆環[4.4.0.12,5 .17,10 ]癸-3,7-二烯(慣用名:四環十二烯)及其衍生物(在環上具有取代基者)。As a monomer which has a structure of X as a structural unit, the nordicene type monomer which has a structure in which a five-membered ring is couple|bonded with a nordicene ring is mentioned, for example. Specific examples thereof include sancyclo[4.3.0.1 2,5 ]dec-3,7-diene (common name: dicyclopentadiene) and derivatives thereof (those having a substituent on the ring), 7,8-Benzotricyclo[4.3.0.1 2,5 ]dec-3-ene (common name: tetrahydrofuran) and its derivatives. Further, as the structure of a monomer having a structural unit Y include for example: shop ring [4.4.0.1 2,5 .1 7,10] deca-3,7-diene (common name: tetracyclododecene ) and its derivatives (those with substituents on the ring).
上述單體的聚合得以眾所周知的方法進行。並且,亦可視需求將上述單體與任意單體共聚合或氫化,藉此獲得預期的聚合物。在氫化的情況下,就耐熱劣化性及耐光劣化性的觀點而言,氫化率為90%以上,以95%以上為佳,以99%以上為較佳。The polymerization of the above-mentioned monomers can be carried out by well-known methods. In addition, the above-mentioned monomers and any monomers can also be copolymerized or hydrogenated according to requirements, thereby obtaining the desired polymer. In the case of hydrogenation, the hydrogenation rate is 90% or more, preferably 95% or more, and more preferably 99% or more, from the viewpoints of thermal deterioration resistance and light deterioration resistance.
再者,亦可視需求使用例如α,β-不飽和羧酸及其衍生物、苯乙烯系烴、具有烯烴系不飽和鍵及能水解之基的有機矽化合物以及不飽和環氧單體等改質劑將所獲得之聚合物改質。Furthermore, it can also be modified by using, for example, α,β-unsaturated carboxylic acid and its derivatives, styrene-based hydrocarbons, organosilicon compounds with olefinic unsaturated bonds and hydrolyzable groups, and unsaturated epoxy monomers, as required. The modifier modifies the obtained polymer.
具有脂環結構的聚合物的數量平均分子量(Mn)以10,000以上為佳,以15,000以上為較佳,尤以20,000以上為佳,且以200,000以下為佳,以100,000以下為較佳,尤以50,000以下為佳。數量平均分子量位於此範圍時,基材薄膜之機械強度及成形加工性取得高度平衡而為合適。The number average molecular weight (Mn) of the polymer having an alicyclic structure is preferably 10,000 or more, preferably 15,000 or more, especially 20,000 or more, preferably 200,000 or less, preferably 100,000 or less, especially Preferably below 50,000. When the number-average molecular weight is within this range, it is suitable that the mechanical strength and formability of the base film are highly balanced.
於此,具有脂環結構之聚合物的數量平均分子量得藉由透過環己烷溶劑的GPC(凝膠滲透層析)法,量測作為聚異戊二烯換算值。Here, the number-average molecular weight of the polymer having an alicyclic structure is measured as a polyisoprene-equivalent value by a GPC (gel permeation chromatography) method permeating a cyclohexane solvent.
於包含具有脂環結構之聚合物的熱塑性樹脂中,具有脂環結構之聚合物的量以50重量%~100重量%為佳,以70重量%~100重量%為較佳。藉由將具有脂環結構之聚合物的量收束在前述範圍,可輕易獲得具有預期物性的基材薄膜。In the thermoplastic resin containing the polymer having an alicyclic structure, the amount of the polymer having an alicyclic structure is preferably 50% by weight to 100% by weight, more preferably 70% by weight to 100% by weight. By constricting the amount of the polymer having an alicyclic structure within the aforementioned range, a substrate film having desired physical properties can be easily obtained.
包含具有脂環結構之聚合物的熱塑性樹脂,得視需求含任意成分組合於具有脂環結構的聚合物。作為任意成分,可列舉例如:紫外線吸收劑;無機微粒子;抗氧化劑、熱穩定劑、近紅外線吸收劑等穩定劑;滑劑、塑化劑等樹脂改質劑;染料、顏料等著色劑;抗老化劑;等摻合劑。任意成分可單獨使用1種,亦可以任意比率組合2種以上使用。The thermoplastic resin containing the polymer having an alicyclic structure may contain any components in combination with the polymer having an alicyclic structure as required. Examples of optional components include: ultraviolet absorbers; inorganic fine particles; stabilizers such as antioxidants, heat stabilizers, and near-infrared absorbers; resin modifiers such as lubricants and plasticizers; colorants such as dyes and pigments; Aging agents; etc. admixtures. An arbitrary component may be used individually by 1 type, and may be used in combination of 2 or more types at arbitrary ratios.
作為纖維素酯,以纖維素的低級脂肪酸酯(例:乙酸纖維素、乙酸丁酸纖維素及乙酸丙酸纖維素)具代表性。低級脂肪酸意指每1分子的碳原子數6以下的脂肪酸。乙酸纖維素包含三乙酸纖維素(TAC)及二乙酸纖維素(DAC)。As the cellulose ester, lower fatty acid esters of cellulose (eg, cellulose acetate, cellulose acetate butyrate, and cellulose acetate propionate) are representative. The lower fatty acid means a fatty acid having 6 or less carbon atoms per molecule. Cellulose acetate includes cellulose triacetate (TAC) and cellulose diacetate (DAC).
乙酸纖維素的乙醯化度以50%~70%為佳,尤以55%~65%為佳。重量平均分子量以70000~120000為佳,尤以80000~100000為佳。並且,上述乙酸纖維素,不僅乙酸,亦可部份經丙酸、丁酸等脂肪酸酯化。並且,構成基材薄膜的樹脂亦可將乙酸纖維素與乙酸纖維素以外的纖維素酯(丙酸纖維素及丁酸纖維素)組合而包含。在此情況下,此等纖維素酯之整體以滿足上述乙醯化度為佳。The acetylation degree of cellulose acetate is preferably 50% to 70%, especially 55% to 65%. The weight average molecular weight is preferably 70,000 to 120,000, especially 80,000 to 100,000. In addition, the above-mentioned cellulose acetate may be partially esterified with fatty acids such as propionic acid and butyric acid as well as acetic acid. In addition, the resin constituting the base film may be contained in combination with cellulose acetate and cellulose esters other than cellulose acetate (cellulose propionate and cellulose butyrate). In this case, it is preferable that the whole of these cellulose esters satisfy the above-mentioned degree of acetylation.
作為三乙酸纖維素的薄膜之較佳例,可列舉:富士軟片公司製「TAC-TD80U」以及在發明協會公開技報公技編號第2001-1745號公開者。As a preferable example of the film of cellulose triacetate, "TAC-TD80U" by Fujifilm Co., Ltd., and those disclosed in Association of Inventions Publication Technical Publication No. 2001-1745 are mentioned.
基材薄膜可為僅具備1層的單層薄膜,亦可為具備2層以上之層體的多層薄膜。其中、基材薄膜以在厚度方向上依序具備第一表面層、包含紫外線吸收劑的中間層及第二表面層的多層薄膜為佳。亦即,基材薄膜以在厚度方向上依序具備例如下述為佳:由包含具有脂環結構之聚合物的熱塑性樹脂而成之第一表面層;由包含具有脂環結構之聚合物及紫外線吸收劑的熱塑性樹脂而成之中間層;由包含具有脂環結構之聚合物的熱塑性樹脂而成之第二表面層。於此種多層薄膜中,藉由第一表面層及第二表面層可抑制中間層所包含之紫外線吸收劑的滲出。The base film may be a single-layer film including only one layer, or may be a multilayer film including two or more layers. Among them, the base film is preferably a multilayer film including a first surface layer, an intermediate layer containing an ultraviolet absorber, and a second surface layer in this order in the thickness direction. That is, it is preferable for the base film to have, for example, the following sequentially in the thickness direction: a first surface layer made of a thermoplastic resin containing a polymer having an alicyclic structure; a first surface layer comprising a polymer having an alicyclic structure and An intermediate layer made of a thermoplastic resin for ultraviolet absorbers; a second surface layer made of a thermoplastic resin containing a polymer having an alicyclic structure. In such a multilayer film, the exudation of the ultraviolet absorber contained in the intermediate layer can be suppressed by the first surface layer and the second surface layer.
為了有效抑制滲出,第一表面層及第二表面層以不包含紫外線吸收劑為佳。並且,第一表面層所包含之聚合物、中間層所包含之聚合物及第二表面層所包含之聚合物可為相同,亦可為相異。因此,第一表面層所包含之熱塑性樹脂與第二表面層所包含之熱塑性樹脂亦可為相異,但就便於形成層體而言,以相同為佳。通常第一表面層及第二表面層除了不包含紫外線吸收劑以外,係藉由與中間層所包含之熱塑性樹脂相同的熱塑性樹脂而形成。In order to effectively suppress exudation, it is preferable that the first surface layer and the second surface layer do not contain an ultraviolet absorber. In addition, the polymer contained in the first surface layer, the polymer contained in the intermediate layer, and the polymer contained in the second surface layer may be the same or different. Therefore, the thermoplastic resin contained in the first surface layer and the thermoplastic resin contained in the second surface layer may also be different, but in terms of facilitating the formation of the layer body, the same is preferred. Usually, the first surface layer and the second surface layer are formed of the same thermoplastic resin as the thermoplastic resin contained in the intermediate layer, except that the ultraviolet absorber is not contained.
作為紫外線吸收劑,可列舉例如:三𠯤系紫外線吸收劑、二苯甲酮系紫外線吸收劑、苯并三唑系紫外線吸收劑、丙烯腈系紫外線吸收劑等有機紫外線吸收劑。其中,在波長380nm附近的紫外線吸收性能優異這點上,以三𠯤系紫外線吸收劑為佳。並且,作為紫外線吸收劑,以分子量400以上者為佳。Examples of the ultraviolet absorber include organic ultraviolet absorbers such as tris-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, benzotriazole-based ultraviolet absorbers, and acrylonitrile-based ultraviolet absorbers. Among them, the three-type ultraviolet absorber is preferable in that it is excellent in ultraviolet absorption performance at a wavelength of around 380 nm. In addition, as the ultraviolet absorber, one having a molecular weight of 400 or more is preferable.
作為三𠯤系紫外線吸收劑,得較佳使用例如具有1,3,5-三𠯤環的化合物。作為三𠯤系紫外線吸收劑的具體例,可列舉:2-(4,6-二苯基-1,3,5-三𠯤-2-基)-5-[(己基)氧基]酚、2,4-雙(2-羥基-4-丁氧基苯基)-6-(2,4-二丁氧基苯基)-1,3,5-三𠯤等。並且,作為三𠯤系紫外線吸收劑的市售品,可列舉例如「TINUVIN 1577」(Ciba Specialty Chemicals公司製)等。As the tris'-based ultraviolet absorber, for example, a compound having a 1,3,5-tris' ring is preferably used. Specific examples of the tris(2)-based ultraviolet absorber include 2-(4,6-diphenyl-1,3,5-tris(2-yl)-5-[(hexyl)oxy]phenol, 2,4-Bis(2-hydroxy-4-butoxyphenyl)-6-(2,4-dibutoxyphenyl)-1,3,5-tris 𠯤 and the like. Moreover, as a commercial item of a ternary ultraviolet absorber, "TINUVIN 1577" (made by Ciba Specialty Chemicals) etc. are mentioned, for example.
作為苯并三唑系紫外線吸收劑,可列舉例如:2,2’-亞甲基雙[4-(1,1,3,3-四甲基丁基)-6-(2H-苯并三唑-2-基)酚]、2-[3,5-二(三級丁基)-2-羥基苯基]-5-氯苯并三唑、2-(2H-苯并三唑-2-基)對甲酚、2-(2H-苯并三唑-2-基)-4,6-雙(1-甲基-1-苯基乙基)酚、2-苯并三唑-2-基-4,6-二(三級丁基)酚、2-[5-氯-(2H-苯并三唑-2-基)]-4-甲基-6-(三級丁基)酚、2-(2H-苯并三唑-2-基)-4,6-二-三級丁基酚、2-(2H-苯并三唑-2-基)-4-(1,1,3,3-四甲基丁基)酚、2-(2H-苯并三唑-2-基)-4-甲基-6-(3,4,5,6-四氫酞醯亞胺基甲基)酚、3-[3-(2H-苯并三唑-2-基)-5-三級丁基-4-羥基苯基]丙酸甲酯/聚乙二醇300的反應生成物、2-(2H-苯并三唑-2-基)-6-(直鏈及側鏈十二基)-4-甲酚等。作為三唑系紫外線吸收劑的市售品,可列舉例如:「ADK STAB LA-31」(旭電化工業公司製)等。Examples of benzotriazole-based ultraviolet absorbers include 2,2'-methylenebis[4-(1,1,3,3-tetramethylbutyl)-6-(2H-benzotri] oxazol-2-yl)phenol], 2-[3,5-bis(tertiarybutyl)-2-hydroxyphenyl]-5-chlorobenzotriazole, 2-(2H-benzotriazole-2 -yl) p-cresol, 2-(2H-benzotriazol-2-yl)-4,6-bis(1-methyl-1-phenylethyl)phenol, 2-benzotriazole-2 -yl-4,6-bis(tertiary butyl)phenol, 2-[5-chloro-(2H-benzotriazol-2-yl)]-4-methyl-6-(tertiary butyl) Phenol, 2-(2H-benzotriazol-2-yl)-4,6-di-tertiary butylphenol, 2-(2H-benzotriazol-2-yl)-4-(1,1 ,3,3-Tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-methyl-6-(3,4,5,6-tetrahydrophthalimide Reaction of methyl) phenol, 3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionate/polyethylene glycol 300 compound, 2-(2H-benzotriazol-2-yl)-6-(straight-chain and side-chain dodecyl)-4-cresol, etc. As a commercial item of a triazole type ultraviolet absorber, "ADK STAB LA-31" (made by Asahi Denka Kogyo Co., Ltd.) etc. is mentioned, for example.
紫外線吸收劑可單獨使用1種,亦可以任意比率組合2種以上使用。An ultraviolet absorber may be used individually by 1 type, and may be used in combination of 2 or more types in arbitrary ratios.
中間層所包含之熱塑性樹脂中,紫外線吸收劑的量,以1重量%以上為佳,以3重量%以上為較佳,且以8重量%以下為佳,以6重量%以下為較佳。於此,所謂紫外線吸收劑的量,表示在使用2種以上的紫外線吸收劑的情形時,此等紫外線吸收劑的整體量。藉由將紫外線吸收劑的量設在前述範圍的下限以上,可有效抑制波長200nm~370nm的紫外線之穿透,並且,藉由設在上限以下,由於可抑制薄膜之黃色調,故可抑制色調的劣化。再者,藉由將紫外線吸收劑的量設在前述範圍,由於不含有多量的紫外線吸收劑,故可抑制熱塑性樹脂之耐熱性的降低。In the thermoplastic resin contained in the intermediate layer, the amount of the ultraviolet absorber is preferably 1 wt % or more, preferably 3 wt % or more, and preferably 8 wt % or less, more preferably 6 wt % or less. Here, the amount of the ultraviolet absorber refers to the total amount of these ultraviolet absorbers when two or more types of ultraviolet absorbers are used. By setting the amount of the ultraviolet absorber to be more than the lower limit of the aforementioned range, the penetration of ultraviolet rays having a wavelength of 200 nm to 370 nm can be effectively suppressed, and by setting the amount below the upper limit, since the yellow tinge of the film can be suppressed, the color tone can be suppressed. deterioration. In addition, by setting the amount of the ultraviolet absorber in the aforementioned range, since a large amount of the ultraviolet absorber is not contained, the reduction in the heat resistance of the thermoplastic resin can be suppressed.
作為包含熱塑性樹脂及紫外線吸收劑之含紫外線吸收劑之熱塑性樹脂的製造方法,可列舉:在透過熔融擠製法或溶液澆鑄法等之基材薄膜的製造前,將紫外線吸收劑摻合於熱塑性樹脂的方法;使用包含高濃度之紫外線吸收劑的母粒的方法;在透過熔融擠製法或溶液澆鑄法等之基材薄膜的製造時,將紫外線吸收劑摻合於熱塑性樹脂的方法;等。在此等方法中,藉由將紫外線吸收劑的量設為前述範圍,可充分提高紫外線吸收劑的分散性。As a method for producing a thermoplastic resin containing a thermoplastic resin and an ultraviolet absorber, the ultraviolet absorber-containing thermoplastic resin includes blending the ultraviolet absorber with the thermoplastic resin before production of the base film by a melt extrusion method, a solution casting method, or the like. method; method of using a master batch containing a high concentration of ultraviolet absorber; method of blending ultraviolet absorber with thermoplastic resin in the production of base film by melt extrusion method or solution casting method, etc.; etc. In these methods, the dispersibility of the ultraviolet absorber can be sufficiently improved by setting the amount of the ultraviolet absorber in the aforementioned range.
熱塑性樹脂的玻璃轉移溫度以70℃以上為佳,以100℃以上為較佳,以120℃以上為更佳,以130℃以上為進一步更佳,其中以150℃以上為佳,尤以160℃以上為佳,且以250℃以下為佳,以180℃以下為較佳。藉由將熱塑性樹脂的玻璃轉移溫度設為前述範圍的下限值以上,可提高在高溫環境下之基材薄膜的耐久性,並且,藉由設為上限值以下,可輕易進行延伸處理。The glass transition temperature of the thermoplastic resin is preferably 70°C or higher, preferably 100°C or higher, more preferably 120°C or higher, and even more preferably 130°C or higher, among which 150°C or higher is preferred, especially 160°C The above is preferable, and the temperature is preferably 250°C or lower, and more preferably 180°C or lower. By setting the glass transition temperature of the thermoplastic resin to be equal to or higher than the lower limit value of the aforementioned range, the durability of the base film in a high temperature environment can be improved, and by setting the glass transition temperature to be equal to or lower than the upper limit value, the stretching treatment can be easily performed.
再者,在基材薄膜具備第一表面層、中間層及第二表面層的情況下,中間層所包含之熱塑性樹脂的玻璃轉移溫度TgA與第一表面層及第二表面層所包含之熱塑性樹脂的玻璃轉移溫度TgB,以滿足TgB-TgA<15℃的關係為佳。Furthermore, when the base film includes a first surface layer, an intermediate layer, and a second surface layer, the glass transition temperature TgA of the thermoplastic resin contained in the intermediate layer and the thermoplastic resin contained in the first surface layer and the second surface layer The glass transition temperature TgB of the resin preferably satisfies the relationship of TgB-TgA<15°C.
基材薄膜在波長380nm的光線穿透率以10%以下為佳,以5%以下為較佳,尤以1%以下為佳。並且,基材薄膜在波長280nm~370nm的光線穿透率,以1.5%以下為佳,以1%以下為較佳。藉此,由於藉由抗靜電薄膜可遮蔽紫外線,故在具備抗靜電薄膜的液晶顯示裝置中,可抑制紫外線所致之對於偏光件及液晶晶胞的損害。因此,可抑制偏光件之偏光度的降低及著色。再者,可使液晶晶胞的液晶驅動穩定。基材薄膜在波長380nm的光線穿透率之下限及基材薄膜在波長280nm~370nm的光線穿透率,理想上得設為0%。The light transmittance of the base film at a wavelength of 380 nm is preferably below 10%, preferably below 5%, especially preferably below 1%. In addition, the light transmittance of the base film at a wavelength of 280 nm to 370 nm is preferably 1.5% or less, and more preferably 1% or less. Thereby, since ultraviolet rays can be shielded by the antistatic film, in the liquid crystal display device provided with the antistatic film, damage to the polarizer and the liquid crystal cell caused by ultraviolet rays can be suppressed. Therefore, a decrease in the degree of polarization and coloring of the polarizer can be suppressed. Furthermore, the liquid crystal driving of the liquid crystal cell can be stabilized. The lower limit of the light transmittance of the base film at a wavelength of 380 nm and the light transmittance of the base film at a wavelength of 280 nm to 370 nm are ideally set to 0%.
於此光線穿透率,得遵循JIS K 0115使用分光光度計量測。This light transmittance must be measured using a spectrophotometer in accordance with JIS K 0115.
基材薄膜可為光學上各向同性的薄膜,亦可為具有光學上各向異性的薄膜。基材薄膜,舉例可言,亦可為具有10nm以下的面內延遲Re的各向同性薄膜。在基材薄膜為各向同性薄膜的情況下,此基材薄膜之厚度方向的延遲Rth以10nm以下為佳。並且,在基材薄膜為具有光學上各向異性的薄膜的情況下,基材薄膜亦可為得發揮作為1/4波長板之功能的薄膜。在基材薄膜層得發揮作為1/4波長板之功能的情況下,該基材薄膜層在量測波長550nm的面內延遲Re以80nm以上為佳,以95nm以上為較佳,且以180nm以下為佳,以150nm以下為較佳。若基材薄膜層的面內延遲Re為前述範圍內,則在將抗靜電薄膜組裝至液晶顯示裝置時,由於即使在以顯示面之法線方向作為旋轉軸而改變設置位置的情況下,透過偏光太陽眼鏡之影像的色調變化仍然較少,故液晶顯示裝置之影像的可見度優異。並且,在基材薄膜層得發揮作為1/4波長板之功能的情況下,此基材薄膜層在量測波長550nm的厚度方向的延遲Rth以50nm~225nm為佳。The base film may be an optically isotropic film or may be an optically anisotropic film. The base film may be, for example, an isotropic film having an in-plane retardation Re of 10 nm or less. When the base film is an isotropic film, the retardation Rth in the thickness direction of the base film is preferably 10 nm or less. In addition, when the base film is a film having optical anisotropy, the base film may be a film capable of functioning as a quarter-wave plate. When the base film layer functions as a quarter-wave plate, the in-plane retardation Re of the base film layer at a measurement wavelength of 550 nm is preferably 80 nm or more, more preferably 95 nm or more, and 180 nm or more. The following is preferable, and 150 nm or less is more preferable. If the in-plane retardation Re of the base film layer is within the above-mentioned range, when the antistatic film is incorporated into a liquid crystal display device, even when the installation position is changed with the normal direction of the display surface as the rotation axis, the transmission The image of polarized sunglasses still has less color tone change, so the visibility of the image of the liquid crystal display device is excellent. In addition, when the base film layer functions as a quarter-wave plate, the retardation Rth of the base film layer in the thickness direction at a measurement wavelength of 550 nm is preferably 50 nm to 225 nm.
再者,在基材薄膜層為得發揮作為1/4波長板之功能之長條狀薄膜的情況下,該基材薄膜層之遲相軸,係以相對於基材薄膜層之長邊方向成為指定範圍的角度之方式設定為佳。以下有時適度將基材薄膜層之遲相軸相對於基材薄膜層之長邊方向所成之角度稱為「配向角」。此配向角的範圍以45°±5°為佳,以45°±3°為較佳,尤以45°±1°為佳。若使用具備具有此種範圍的配向角之基材薄膜層的抗靜電薄膜,可使可提高透過偏光太陽眼鏡之影像的可見度的偏光板便於製造。Furthermore, when the base film layer is an elongated film that can function as a quarter-wave plate, the slow axis of the base film layer is relative to the longitudinal direction of the base film layer. It is preferable to set it so that it becomes the angle of the specified range. Hereinafter, the angle formed by the slow phase axis of the base film layer with respect to the longitudinal direction of the base film layer may be appropriately referred to as an "alignment angle". The range of the alignment angle is preferably 45°±5°, preferably 45°±3°, and particularly preferably 45°±1°. If an antistatic film having a base film layer having an alignment angle of such a range is used, a polarizing plate that can improve the visibility of an image transmitted through polarized sunglasses can be easily manufactured.
基材薄膜之面內延遲Re的離差以10nm以內為佳,以5nm以內為較佳,尤以2nm以內為佳。並且,基材薄膜之厚度方向之延遲Rth的離差以20nm以內為佳,以15nm以內為較佳,尤以10nm以內為佳。藉由將延遲Re及Rth的離差收束在前述範圍,能使適用本發明之抗靜電薄膜的液晶顯示裝置的顯示品質良好。The dispersion of the in-plane retardation Re of the base film is preferably within 10 nm, preferably within 5 nm, and particularly preferably within 2 nm. In addition, the dispersion of retardation Rth in the thickness direction of the base film is preferably within 20 nm, preferably within 15 nm, particularly preferably within 10 nm. By condensing the dispersion of retardation Re and Rth within the aforementioned ranges, the display quality of the liquid crystal display device to which the antistatic film of the present invention is applied can be improved.
基材薄膜的厚度以10μm以上為佳,以15μm以上為較佳,尤以20μm以上為佳,且以100μm以下為佳,以60μm以下為較佳,以50μm以下為更佳。藉由將基材薄膜的厚度收束在前述範圍,能夠實現抗靜電薄膜的薄膜化。並且,在基材薄膜具備第一表面層、中間層及第二表面層的情況下,中間層的厚度以10μm以上且40μm以下為佳,第一表面層及第二表面層的合計厚度以5μm以上且20μm以下為佳。再者,中間層的厚度與第一表面層及第二表面層之合計厚度的比[(中間層的厚度)/(第一表面層及第二表面層的合計厚度)],就生產穩定性的觀點而言,以1~3μm為佳。並且,中間層的厚度的變異,由於可使液晶顯示裝置的影像顯示性良好,故以整面設為±2.0μm以內為佳。The thickness of the base film is preferably 10 μm or more, preferably 15 μm or more, especially 20 μm or more, and preferably 100 μm or less, preferably 60 μm or less, and more preferably 50 μm or less. By constricting the thickness of the base film within the aforementioned range, thinning of the antistatic film can be achieved. Furthermore, when the base film includes a first surface layer, an intermediate layer, and a second surface layer, the thickness of the intermediate layer is preferably 10 μm or more and 40 μm or less, and the total thickness of the first surface layer and the second surface layer is 5 μm. It is preferably more than or equal to 20 μm. In addition, the ratio of the thickness of the intermediate layer to the total thickness of the first surface layer and the second surface layer [(thickness of the intermediate layer)/(the total thickness of the first surface layer and the second surface layer)], the production stability From the viewpoint of , it is preferably 1 to 3 μm. Moreover, since the variation of the thickness of the intermediate layer can improve the image display property of the liquid crystal display device, it is preferable to set it within ±2.0 μm over the entire surface.
基材薄膜,舉例而言,得藉由將熱塑性樹脂成形為薄膜狀而製造。作為成形方法,舉例而言,得使用加熱熔融成形法、溶液澆鑄法等。其中,就可使薄膜中的揮發性成分減少而言,以使用加熱熔融成形法為佳。加熱熔融成形法可更詳細分類為例如熔融擠製成形法、沖壓成形法、充氣成形法、射出成形法、吹氣成形法、延伸成形法等。此等之中,為了獲得機械強度及表面精密度等優異的基材薄膜,以使用熔融擠製成形法為佳。The base film can be produced, for example, by molding a thermoplastic resin into a film. As the molding method, for example, a hot melt molding method, a solution casting method, or the like can be used. Among them, it is preferable to use a heat-melt molding method in order to reduce the volatile components in the film. The heat-melt molding method can be classified into, for example, a melt extrusion molding method, a press molding method, an inflatable molding method, an injection molding method, a blow molding method, a stretch molding method, and the like in more detail. Among these, in order to obtain a base film excellent in mechanical strength, surface precision, and the like, it is preferable to use a melt extrusion molding method.
尤其在製造具備2以上之層體的多層薄膜作為基材薄膜的情況下,以使用共擠製法為佳。舉例而言,具備第一表面層、中間層及第二表面層之多層結構的基材薄膜,得藉由將用以形成第一表面層的熱塑性樹脂、用以形成中間層的熱塑性樹脂與用以形成第二表面層的熱塑性樹脂自模具共擠製而製造。此種共擠製法之中,以共擠製T型模法為佳。並且,作為共擠製T型模法,可列舉:進料模組及多歧管模組。In particular, when a multilayer film having two or more layers is produced as a base film, it is preferable to use a co-extrusion method. For example, a substrate film having a multilayer structure of a first surface layer, an intermediate layer and a second surface layer can be obtained by combining the thermoplastic resin used to form the first surface layer, the thermoplastic resin used to form the intermediate layer with Manufactured by co-extrusion from a mold with a thermoplastic resin forming the second surface layer. Among such co-extrusion methods, the co-extrusion T-die method is preferred. In addition, as a co-extrusion T-die method, a feed module and a multi-manifold module can be mentioned.
在共擠製T型模法中,具有T型模的擠製機中之熱塑性樹脂的熔融溫度以(Tg+80)℃以上為佳,以(Tg+100)℃以上為較佳,且以(Tg+180)℃以下為佳,以(Tg+150)℃以下為較佳。於此「Tg」表示熱塑性樹脂的玻璃轉移溫度,在基材薄膜具備第一表面層、中間層及第二表面層的情況下,表示第一表面層及第二表面層所包含之熱塑性樹脂的玻璃轉移溫度。藉由將在擠製機的熔融溫度設為前述範圍的下限值以上,可充分提高熱塑性樹脂的流動性,並且,藉由設為上限值以下,可抑制熱塑性樹脂的劣化。In the co-extrusion T-die method, the melting temperature of the thermoplastic resin in the extruder with the T-die is preferably (Tg+80)°C or higher, preferably (Tg+100)°C or higher, and preferably (Tg+180)°C The following is preferable, and (Tg+150) ℃ or less is more preferable. Here, "Tg" represents the glass transition temperature of the thermoplastic resin, and when the base film includes a first surface layer, an intermediate layer, and a second surface layer, it represents the temperature of the thermoplastic resin contained in the first surface layer and the second surface layer. glass transition temperature. The flowability of the thermoplastic resin can be sufficiently improved by making the melting temperature in the extruder equal to or more than the lower limit value of the above-mentioned range, and the deterioration of the thermoplastic resin can be suppressed by making it equal to or less than the upper limit value.
再者,在熔融擠製成形法中,擠製機中之熱塑性樹脂的溫度,較佳為:在樹脂投入口為Tg~(Tg+100)℃,在擠製機出口為(Tg+50)~(Tg+170)℃,模具溫度為(Tg+50)℃~(Tg+170)℃。Furthermore, in the melt extrusion molding method, the temperature of the thermoplastic resin in the extruder is preferably Tg~(Tg+100)°C at the resin inlet, and (Tg+50)~(Tg+170) at the extruder outlet. ℃, the mold temperature is (Tg+50)℃~(Tg+170)℃.
基材薄膜之製造方法,亦可包含對於藉由上述成形方法獲得之薄膜施以延伸處理的工序。藉由施以延伸處理,可使基材薄膜顯現延遲等光學特性。The manufacturing method of a base film may include the process of subjecting the film obtained by the said shaping|molding method to an extension process. By performing the stretching treatment, optical properties such as retardation can be exhibited in the base film.
延伸處理得依欲使基材薄膜顯現的延遲,以任意方法進行。舉例而言,可進行僅沿單一方向進行延伸處理的單軸延伸處理,亦可進行沿相異的2方向進行延伸處理的雙軸延伸處理。並且,在雙軸延伸處理中,可進行同時沿2方向進行延伸處理的同時雙軸延伸處理,亦可進行沿某方向進行延伸處理後沿別的方向進行延伸處理的逐次雙軸延伸處理。再者,延伸處理可進行沿薄膜長邊方向進行延伸處理的縱延伸處理、沿薄膜寬幅方向進行延伸處理的横延伸處理、沿既不平行亦不垂直於薄膜寬幅方向的傾斜方向進行延伸處理的斜向延伸處理之任一者,亦可組合此等而進行。延伸處理的方式,可列舉例如:輥方式、浮方式、拉幅方式等。The stretching treatment may be carried out by any method depending on the retardation to be expressed in the base film. For example, it is possible to perform a uniaxial stretching process in which the stretching process is performed only in a single direction, or a biaxial stretching process in which the stretching process is performed in two different directions. Further, in the biaxial stretching treatment, simultaneous biaxial stretching treatment in which stretching treatment is performed in two directions at the same time may be performed, or sequential biaxial stretching treatment in which stretching treatment is performed in a certain direction and then stretching treatment in another direction may be performed. In addition, the stretching treatment can be carried out in the longitudinal direction of the film in the longitudinal direction of the film, in the transverse direction of the film in the width direction of the film, and in the inclined direction which is neither parallel nor perpendicular to the film width direction. Any of the oblique extension treatments of the treatment may be performed in combination. As the method of the stretching treatment, for example, a roll method, a float method, a tenter method, etc. are mentioned.
在基材薄膜為得發揮作為1/4波長板之功能的薄膜的情況下,前述延伸處理之中,以斜向延伸處理為佳。在貼合具備作為1/4波長板之基材薄膜的抗靜電薄膜與偏光件而使用的情況下,通常將偏光件的穿透軸與基材薄膜的遲相軸以既不平行亦不垂直之指定角度交叉的方式貼合而進行。此時,在藉由斜向延伸處理而獲得的基材薄膜中,由於相對於其基材薄膜之寬幅方向在傾斜方向上顯現遲相軸,故無須為了貼合而將抗靜電薄膜裁成一定大小,能夠透過輥對輥法而有效貼合。得使用於斜向延伸處理的延伸機,可列舉例如:拉幅延伸機。拉幅延伸機有横單軸延伸機、同時雙軸延伸機等,其中以得將長條狀之薄膜連續斜向延伸者為佳。When the base film is a film capable of functioning as a quarter-wave plate, among the above-mentioned stretching treatments, it is preferable to use an oblique stretching treatment. In the case of laminating an antistatic film and a polarizer with a base film as a quarter-wave plate, the transmission axis of the polarizer and the slow axis of the base film are usually set so that they are neither parallel nor perpendicular. It is carried out in a way that the specified angle intersects. At this time, in the base film obtained by the diagonal stretching process, since the slow axis appears in the oblique direction with respect to the width direction of the base film, it is not necessary to cut the antistatic film for lamination. A certain size can be effectively attached by the roll-to-roll method. As the stretching machine that can be used for the diagonal stretching process, for example, a tenter stretching machine is exemplified. The tenter stretching machine includes a horizontal uniaxial stretching machine, a simultaneous biaxial stretching machine, etc. Among them, the one that can continuously and obliquely stretch the long film is preferred.
延伸溫度以基材薄膜所包含之熱塑性樹脂的玻璃轉移溫度Tg作為基準,以(Tg-30)℃以上為佳,以(Tg-10)℃以上為較佳,以(Tg+60)℃以下為佳,以(Tg+50)℃以下為較佳。The stretching temperature is based on the glass transition temperature Tg of the thermoplastic resin contained in the base film, and is preferably (Tg-30)°C or higher, preferably (Tg-10)°C or higher, and preferably (Tg+60)°C or lower , preferably below (Tg+50) ℃.
延伸倍率以1.01倍~30倍為佳,以1.01倍~10倍為較佳,以1.01倍~5倍為更佳。The stretching ratio is preferably 1.01 times to 30 times, preferably 1.01 times to 10 times, and more preferably 1.01 times to 5 times.
對於基材薄膜之表面,可視需求施加表面處理。舉例而言,對於設置抗靜電層之側之基材薄膜的面,為提高與抗靜電層的接合性,可施加例如電漿處理、電暈處理、鹼處理、塗布處理等表面處理。For the surface of the base film, surface treatment can be applied as required. For example, surface treatments such as plasma treatment, corona treatment, alkali treatment, coating treatment, etc. can be applied to the surface of the base film on the side where the antistatic layer is provided, in order to improve the adhesion with the antistatic layer.
表面處理之中,以電暈處理為佳。藉由電暈處理,能明顯提高基材薄膜與抗靜電層的接合性。電暈處理時的電暈放電電子的照射量以1W/m2 /min~1000W/m2 /min為佳。施有此種電暈處理的基材薄膜之面的水接觸角以10°~50°為佳。水接觸角的量測得遵循JIS R3257 θ/2法而量測。並且,在施加電暈處理後,為使抗靜電層的外觀良好,以在已施加電暈處理的面上形成抗靜電層前,將基材薄膜除電為佳。Among the surface treatments, corona treatment is preferred. By corona treatment, the adhesion between the base film and the antistatic layer can be significantly improved. The irradiation amount of corona discharge electrons in the corona treatment is preferably 1 W/m 2 /min to 1000 W/m 2 /min. The water contact angle of the surface of the corona-treated substrate film is preferably 10° to 50°. The measurement of the water contact angle was measured in accordance with the JIS R3257 θ/2 method. In addition, after the corona treatment is applied, in order to make the appearance of the antistatic layer good, it is preferable to remove the static electricity of the base film before forming the antistatic layer on the surface to which the corona treatment has been applied.
[3.抗靜電層][3. Antistatic layer]
抗靜電層係設置於基材薄膜上的層體,包含丙烯酸酯系黏合劑組成物與具有導電性的金屬氧化物粒子。於抗靜電層中,金屬氧化物粒子以連結成鏈狀的方式凝集而形成鏈狀連結體,透過此鏈狀連結體而形成導電路徑。因此,本發明的抗靜電薄膜可發揮抗靜電功能。The antistatic layer is a layer body disposed on the base film, and includes an acrylate-based adhesive composition and conductive metal oxide particles. In the antistatic layer, the metal oxide particles are aggregated so as to be linked in a chain shape to form a chain link body, and a conductive path is formed through the chain link body. Therefore, the antistatic film of the present invention can exert an antistatic function.
[3.1.丙烯酸酯系黏合劑組成物][3.1. Acrylic adhesive composition]
抗靜電層包含丙烯酸酯系黏合劑組成物。藉由丙烯酸酯系黏合劑組成物,可將金屬氧化物粒子保持在抗靜電層。The antistatic layer contains an acrylate-based adhesive composition. The metal oxide particles can be held in the antistatic layer by the acrylate-based binder composition.
於本發明中,所謂「丙烯酸酯系黏合劑組成物」,意指合併有丙烯酸酯系黏合劑聚合物與丙烯酸酯系聚合性單體者。丙烯酸酯系黏合劑聚合物,係藉由使包含丙烯酸酯系聚合性單體的單體組成物聚合而獲得之二聚物以上的聚合物。在此種聚合反應完全進行的情況下,丙烯酸酯系黏合劑組成物僅由丙烯酸酯系黏合劑聚合物而成。亦即,丙烯酸酯系黏合劑組成物,可為僅由丙烯酸酯系黏合劑聚合物而成,亦可為由丙烯酸酯系黏合劑聚合物及丙烯酸酯系聚合性單體而成。In the present invention, the "acrylate-based adhesive composition" means a combination of an acrylate-based adhesive polymer and an acrylate-based polymerizable monomer. The acrylate-based binder polymer is a polymer of a dimer or more obtained by polymerizing a monomer composition containing an acrylate-based polymerizable monomer. When such a polymerization reaction proceeds completely, the acrylate-based adhesive composition consists only of the acrylate-based adhesive polymer. That is, the acrylate-based adhesive composition may be composed of only an acrylate-based adhesive polymer, or may be composed of an acrylate-based adhesive polymer and an acrylate-based polymerizable monomer.
所謂丙烯酸酯系聚合性單體,意指含有丙烯酸酯結構的單體。於此,所謂丙烯酸酯結構,意指丙烯酸酯中之由H2 C=CH-(C=O)-O-所表示的結構。The acrylate-based polymerizable monomer means a monomer containing an acrylate structure. Here, the acrylate structure means the structure represented by H 2 C=CH—(C=O)—O— in the acrylate.
作為丙烯酸酯系聚合性單體,可列舉例如:丙烯酸烷酯、丙烯酸與多元醇的酯、丙烯酸與多羥基醚的酯、丙烯酸與包含芳環之醇的酯、多官能丙烯酸胺甲酸酯、環氧丙烯酸酯。Examples of acrylate-based polymerizable monomers include alkyl acrylates, esters of acrylic acid and polyhydric alcohols, esters of acrylic acid and polyhydroxy ethers, esters of acrylic acid and alcohols containing aromatic rings, polyfunctional acrylic urethanes, epoxy acrylate.
作為丙烯酸烷酯,可列舉例如:碳原子數1~30之烷基的丙烯酸酯,具體而言,可列舉例如:丙烯酸甲酯、丙烯酸乙酯、丙烯酸丁酯、丙烯酸己酯、丙烯酸環己酯、丙烯酸-2-乙基己酯、丙烯酸辛酯、丙烯酸壬酯、丙烯酸十二酯及丙烯酸十八酯。Examples of alkyl acrylates include acrylates of alkyl groups having 1 to 30 carbon atoms, and specific examples include methyl acrylate, ethyl acrylate, butyl acrylate, hexyl acrylate, and cyclohexyl acrylate. , 2-ethylhexyl acrylate, octyl acrylate, nonyl acrylate, dodecyl acrylate and octadecyl acrylate.
作為丙烯酸與多元醇的酯,可列舉例如:丙烯酸與新戊四醇的酯(例如:三丙烯酸新戊四醇酯、四丙烯酸新戊四醇酯)、丙烯酸與三羥甲丙烷的酯(例如:三丙烯酸三羥甲丙烷酯)、丙烯酸與乙二醇的酯(例如:二丙烯酸聚乙二醇酯)及丙烯酸與丙三醇的酯。Examples of esters of acrylic acid and polyols include esters of acrylic acid and neotaerythritol (eg, neotaerythritol triacrylate, neotaerythritol tetraacrylate), and esters of acrylic acid and trimethylolpropane (eg : Trimethylolpropane triacrylate), esters of acrylic acid and ethylene glycol (eg: polyethylene glycol diacrylate), and esters of acrylic acid and glycerol.
作為丙烯酸與多羥基醚的酯,可列舉例如:丙烯酸與二新戊四醇的酯(例如:四丙烯酸二新戊四醇酯、五丙烯酸二新戊四醇酯、六丙烯酸二新戊四醇酯)、丙烯酸與二乙二醇的酯(例如:二丙烯酸二乙二醇酯)及丙烯酸與聚乙二醇的酯(例如:二丙烯酸聚乙二醇酯)。Examples of esters of acrylic acid and polyhydroxy ethers include esters of acrylic acid and dipivalerythritol (for example, dipeutaerythritol tetraacrylate, dipeutaerythritol pentaacrylate, dipivalerythritol hexaacrylate, etc.) esters), acrylic acid and diethylene glycol (eg: diethylene glycol diacrylate) and acrylic acid and polyethylene glycol (eg: polyethylene glycol diacrylate).
作為丙烯酸與包含芳環之醇的酯,可列舉例如:二丙烯酸雙苯氧乙醇茀酯、二(甲基)丙烯酸雙酚A環氧乙烷酯、二(甲基)丙烯酸雙酚A環氧丙烯酯。Examples of esters of acrylic acid and alcohol containing an aromatic ring include bisphenoxyethanol perylene diacrylate, bisphenol A ethylene oxide di(meth)acrylate, and bisphenol A epoxy di(meth)acrylate. Acrylate.
作為多官能丙烯酸胺甲酸酯,可列舉例如:二異氰酸酯、丙烯酸與多羥基醚的酯之胺甲酸酯反應丙烯酸酯。作為多官能丙烯酸胺甲酸酯,具體而言,可列舉例如:二異氰酸異佛酮酯、三丙烯酸新戊四醇酯及四丙烯酸新戊四醇酯的混合物之胺甲酸酯反應丙烯酸酯。As polyfunctional acrylate urethane, for example, diisocyanate and urethane reaction acrylate of ester of acrylic acid and polyhydroxy ether are mentioned. Specific examples of polyfunctional urethane acrylates include urethane-reactive acrylic acid of a mixture of isophorone diisocyanate, neotaerythritol triacrylate, and neotaerythritol tetraacrylate. ester.
作為丙烯酸酯系聚合性單體,以1分子中具有3個以上丙烯酸酯結構的化合物為佳。丙烯酸酯系黏合劑組成物藉由包含此種化合物的聚合物,可有效降低抗靜電層的表面電阻值。As an acrylate type polymerizable monomer, the compound which has 3 or more of acrylate structures in 1 molecule is preferable. The acrylate-based adhesive composition can effectively reduce the surface resistance of the antistatic layer by using a polymer containing such a compound.
作為1分子中具有3個以上丙烯酸酯結構的化合物,可列舉例如:三丙烯酸新戊四醇酯、四丙烯酸新戊四醇酯、四丙烯酸二新戊四醇酯、五丙烯酸二新戊四醇酯、六丙烯酸二新戊四醇酯等。As a compound which has 3 or more acrylate structures in 1 molecule, for example, neotaerythritol triacrylate, neotaerythritol tetraacrylate, dipeutaerythritol tetraacrylate, dipeutaerythritol pentaacrylate may be mentioned. esters, dipivaloerythritol hexaacrylate, etc.
並且,作為丙烯酸酯系聚合性單體,可單獨使用1種1分子中具有3個以上丙烯酸酯結構的化合物,亦可以任意比率組合2種以上使用。舉例而言,亦可將三丙烯酸新戊四醇酯與四丙烯酸新戊四醇酯的組合,以及四丙烯酸二新戊四醇酯與五丙烯酸二新戊四醇酯與六丙烯酸二新戊四醇酯的組合,作為用以獲得丙烯酸酯系黏合劑聚合物的丙烯酸酯系聚合性單體使用。Moreover, as an acrylate type polymerizable monomer, the compound which has 3 or more of acrylate structures in 1 molecule can be used individually, and it can also be used combining two or more types in arbitrary ratios. For example, a combination of neotaerythritol triacrylate and neotaerythritol tetraacrylate, as well as dipivoerythritol tetraacrylate and dipivalerythritol pentaacrylate and dipivaloerythritol hexaacrylate can also be used The combination of alcohol esters is used as an acrylate-based polymerizable monomer for obtaining an acrylate-based binder polymer.
作為用以獲得丙烯酸酯系黏合劑聚合物的單體組成物,較佳為:使用合計包含80重量%以上之1分子中含有4個丙烯酸酯結構的化合物、含有5個丙烯酸酯結構的化合物及含有6個丙烯酸酯結構的化合物的單體組成物。As a monomer composition for obtaining an acrylate-based adhesive polymer, it is preferable to use a compound containing 4 acrylate structures in one molecule, a compound containing 5 acrylate structures, and Monomer composition of compounds containing 6 acrylate structures.
並且,作為用以獲得丙烯酸酯系黏合劑聚合物的單體,除了上述已列舉之單體之外,亦可使用任意單體。作為任意單體,可單獨使用1種,亦可以任意比率組合2種以上使用。Moreover, as a monomer for obtaining an acrylate-based adhesive polymer, arbitrary monomers other than the above-mentioned monomers may be used. As arbitrary monomers, one type may be used alone, or two or more types may be used in combination at an arbitrary ratio.
作為任意單體,若將具有羧基與聚合性之碳-碳雙鍵的化合物,相對於用以獲得丙烯酸酯系黏合劑聚合物的單體組成物,使用0.01重量%~5重量%,由於可有效降低抗靜電層的表面電阻值,故為佳。作為前述具有羧基與聚合性之碳-碳雙鍵的化合物,可列舉例如:丙烯酸;甲基丙烯酸;丁烯酸;反丁烯二酸;伊康酸;黏康酸;順丁烯二酐與單醇的半酯類;五丙烯酸二新戊四醇酯及三丙烯酸新戊四醇酯等具有羥基的丙烯酸酯類中之一部分羥基加成於丙烯酸之碳-碳雙鍵的化合物;五丙烯酸二新戊四醇酯及三丙烯酸新戊四醇酯等具有羥基的丙烯酸酯類中之羥基與二羧酸或羧酸酐反應的化合物;等。此等可單獨使用1種,亦可以任意比率組合2種以上使用。As an arbitrary monomer, if a compound having a carboxyl group and a polymerizable carbon-carbon double bond is used in 0.01% by weight to 5% by weight relative to the monomer composition for obtaining the acrylate-based adhesive polymer, since it can be It is better to effectively reduce the surface resistance value of the antistatic layer. Examples of the compound having a carboxyl group and a polymerizable carbon-carbon double bond include acrylic acid; methacrylic acid; crotonic acid; fumaric acid; itaconic acid; muconic acid; maleic anhydride and Half-esters of monoalcohols; compounds in which some of the hydroxyl groups of acrylates with hydroxyl groups such as dipeptaerythritol pentaacrylate and neotaerythritol triacrylate are added to the carbon-carbon double bond of acrylic acid; pentaacrylic acid diacrylate Compounds in which the hydroxyl group in the acrylates having hydroxyl groups, such as neotaerythritol ester and neotaerythritol triacrylate, reacts with dicarboxylic acid or carboxylic acid anhydride; etc. These may be used individually by 1 type, and may be used in combination of 2 or more types at arbitrary ratios.
用以獲得丙烯酸酯系黏合劑聚合物的單體組成物的酸價以0.01mgKOH/g~0.5mgKOH/g為佳。藉由將用以獲得丙烯酸酯系黏合劑聚合物的單體組成物的酸價設在前述範圍的下限值以上,可有效降低抗靜電層的表面電阻值,並且,藉由設在上限值以下,可使抗靜電劑的穩定性良好。The acid value of the monomer composition for obtaining the acrylate-based adhesive polymer is preferably 0.01 mgKOH/g to 0.5 mgKOH/g. The surface resistance value of the antistatic layer can be effectively reduced by setting the acid value of the monomer composition used to obtain the acrylate-based adhesive polymer to be above the lower limit of the aforementioned range, and by setting the upper limit Below the value, the stability of the antistatic agent can be made good.
單體組成物的酸價得藉由遵循JIS K0070(化學製品的酸價、皂化價、酯價、碘價、羥基價及不皂化物的試驗方法)對於指示劑使用溴瑞香草酚藍而量測。The acid value of the monomer composition can be measured by following JIS K0070 (Test methods for acid value, saponification value, ester value, iodine value, hydroxyl value, and unsaponifiable matter of chemical products) using brorevanillin blue for the indicator Measurement.
在抗靜電層中,丙烯酸酯系黏合劑組成物的量以30重量%以上為佳,以40重量%以上為較佳,尤以50重量%以上為佳,且以100重量%以下為佳,以79重量%以下為較佳,尤以78重量%以下為佳。藉由將丙烯酸酯系黏合劑組成物的量設為前述範圍,可提高抗靜電層與基材薄膜之接合性,且可提升金屬氧化物粒子之在抗靜電層中的分散性。並且,可使抗靜電層的厚度均勻。In the antistatic layer, the amount of the acrylate adhesive composition is preferably 30% by weight or more, preferably 40% by weight or more, especially 50% by weight or more, and preferably 100% by weight or less, The content is preferably 79% by weight or less, particularly preferably 78% by weight or less. By setting the amount of the acrylate-based adhesive composition in the aforementioned range, the adhesion between the antistatic layer and the base film can be improved, and the dispersibility of the metal oxide particles in the antistatic layer can be improved. Also, the thickness of the antistatic layer can be made uniform.
[3.2.金屬氧化物粒子][3.2. Metal oxide particles]
作為金屬氧化物粒子所包含之金屬氧化物,可列舉例如:氧化錫;摻銻、氟或磷的氧化錫;氧化銦;摻銻、錫或氟的氧化銦;氧化銻;低氧化鈦等。尤其以摻銻的氧化錫及摻銻的氧化銦為佳。並且,此等可單獨使用1種,亦可以任意比率組合2種以上使用。Examples of the metal oxide contained in the metal oxide particles include tin oxide; tin oxide doped with antimony, fluorine or phosphorus; indium oxide; indium oxide doped with antimony, tin or fluorine; antimony oxide; titanium suboxide. In particular, antimony-doped tin oxide and antimony-doped indium oxide are preferred. In addition, these may be used individually by 1 type, and may be used in combination of 2 or more types at arbitrary ratios.
金屬氧化物粒子的平均粒徑,以2nm以上為佳,以4nm以上為較佳,尤以5nm以上為佳,且以50nm以下為佳,以40nm以下為較佳,尤以10nm以下為佳。藉由將金屬氧化物粒子的平均粒徑設為前述範圍的下限值以上,由於金屬氧化物粒子難以凝集成粒狀,故容易使金屬氧化物粒子以連結成鏈狀的方式凝集。並且,藉由設為上限值以下,由於可減小抗靜電層的霧度,故可提升抗靜電層的透明性。再者,可輕易使金屬氧化物粒子彼此連結成鏈狀。The average particle size of the metal oxide particles is preferably 2 nm or more, more preferably 4 nm or more, especially 5 nm or more, and preferably 50 nm or less, preferably 40 nm or less, especially 10 nm or less. By making the average particle diameter of the metal oxide particles equal to or more than the lower limit of the above-mentioned range, the metal oxide particles are difficult to agglomerate in a granular form, so that the metal oxide particles are easily aggregated in a chain-like manner. And by setting it below an upper limit, since the haze of an antistatic layer can be reduced, the transparency of an antistatic layer can be improved. Furthermore, metal oxide particles can be easily linked to each other in a chain shape.
於此,所謂粒子的平均粒徑,係在假定以雷射繞射法所量測之粒徑分布顯示常態分布的情況下表示散射強度成為最大的粒徑。Here, the average particle diameter of the particles means the particle diameter at which the scattering intensity becomes the maximum, assuming that the particle diameter distribution measured by the laser diffraction method shows a normal distribution.
並且,金屬氧化物粒子以該粒子之表面經水解性的有機矽化合物處理者為佳。施加有此種處理的金屬氧化物粒子,通常由金屬氧化物而成之粒子本身的表面藉由有機矽化合物的水解物改質。於是,以下有時將透過水解性的有機矽化合物之金屬氧化物粒子之表面的處理稱為「改質處理」。並且,有時將粒子表面經水解性的有機矽化合物處理的金屬氧化物粒子稱為「改質粒子」。藉由施以此種修飾處理,可強化金屬氧化物粒子之鏈狀的連結、提升金屬氧化物粒子的分散性。In addition, the surface of the metal oxide particles is preferably treated with a hydrolyzable organosilicon compound. The surface of the metal oxide particles to which such a treatment has been applied is usually modified by the hydrolyzate of the organosilicon compound. Therefore, the treatment of the surface of the metal oxide particles through which the hydrolyzable organosilicon compound is permeated may be referred to as "modification treatment" below. In addition, the metal oxide particles whose particle surfaces are treated with a hydrolyzable organosilicon compound are sometimes referred to as "modified particles". By performing such a modification treatment, the chain connection of the metal oxide particles can be strengthened, and the dispersibility of the metal oxide particles can be improved.
作為水解性的有機矽化合物,可列舉例如:下述式(1)所表示之有機矽化合物。 R1 a Si(OR2 )4−a (1) (式(1)中,R1 及R2 分別獨立表示選自由氫原子、鹵素原子、碳原子數1~10的烴基及碳原子數1~10的有機基而成之群組的基,a表示0~3的整數。)As a hydrolyzable organosilicon compound, the organosilicon compound represented by following formula (1) is mentioned, for example. R 1 a Si(OR 2 ) 4−a (1) (In formula (1), R 1 and R 2 each independently represent a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 10 carbon atoms, and a carbon number 1 A group of a group consisting of organic groups of to 10, and a represents an integer of 0 to 3.)
式(1)中,若要舉出作為R1 的較佳例,可列舉:乙烯基、丙烯醯基、碳原子數1~8的烷基等。In formula (1), a vinyl group, an acryl group, an alkyl group having 1 to 8 carbon atoms, etc. are mentioned as preferable examples of R 1 .
並且,式(1)中,若要舉出作為R2 的較佳例,可列舉:氫原子、乙烯基、芳基、丙烯醯基、碳原子數1~8的烷基、-CH2 OCn H2n+1 (n表示1~4的整數。)等。In addition, in formula (1), preferable examples of R 2 include a hydrogen atom, a vinyl group, an aryl group, an acryl group, an alkyl group having 1 to 8 carbon atoms, and -CH 2 OC n H 2n+1 (n represents an integer of 1 to 4.) etc.
作為式(1)所表示之有機矽化合物,以「a」為0或1的有機矽化合物為佳。式(1)中「a」為0之四官能的有機矽化合物,對於維持金屬氧化物粒子的連結係有效的。並且,式(1)中「a」為1之三官能的有機矽化合物,對於提升已連結成鏈狀之金屬氧化物粒子的抗靜電劑中的分散性係有效的。再者,式(1)中「a」為0或1之三官能以上的有機矽化合物,通常水解速度快。As the organosilicon compound represented by the formula (1), an organosilicon compound in which "a" is 0 or 1 is preferable. The organosilicon compound in which "a" in the formula (1) is a tetrafunctional of 0 is effective for maintaining the bonding system of the metal oxide particles. In addition, the organosilicon compound in which "a" in the formula (1) is a trifunctional 1 is effective in improving the dispersibility in the antistatic agent of the chain-linked metal oxide particles. In addition, the organosilicon compound in which "a" in the formula (1) is 0 or 1 trifunctional or more generally has a fast hydrolysis rate.
並且,作為式(1)所表示的有機矽化合物,以組合「a」為0之四官能的有機矽化合物與「a」為1之三官能的有機矽化合物使用為佳。在如此組合使用的情況下,四官能的有機矽化合物與三官能的有機矽化合物之莫耳比(四官能的有機矽化合物/三官能的有機矽化合物)以20/80以上為佳,以30/70以上為較佳,且以80/20以下為佳,以70/30以下為較佳。藉由使四官能的有機矽化合物不過剩,由於可抑制金屬氧化物粒子凝固成塊,故容易使鏈狀的連結生成。並且,藉由使三官能的有機矽化合物不過剩,可抑制金屬氧化物粒子連結時之凝膠的生成。因此,藉由以如前述之莫耳比組合式(1)所表示之四官能的有機矽化合物與三官能的有機矽化合物,可使金屬氧化物粒子有效連結成鏈狀。In addition, as the organosilicon compound represented by the formula (1), it is preferable to use a combination of a tetrafunctional organosilicon compound in which "a" is 0 and a trifunctional organosilicon compound in which "a" is 1. In the case of such combination, the molar ratio of the tetrafunctional organosilicon compound and the trifunctional organosilicon compound (tetrafunctional organosilicon compound/trifunctional organosilicon compound) is preferably above 20/80, and preferably 30 /70 or more is preferable, and 80/20 or less is more preferable, and 70/30 or less is more preferable. By not making the tetrafunctional organosilicon compound excessive, the metal oxide particles can be inhibited from being solidified and agglomerated, so that chain-like linkages can be easily formed. In addition, by keeping the trifunctional organosilicon compound in an excess, it is possible to suppress the generation of gel when the metal oxide particles are connected. Therefore, by combining the tetrafunctional organosilicon compound and the trifunctional organosilicon compound represented by the aforementioned molar ratio, the metal oxide particles can be effectively linked in a chain shape.
如前所述,藉由組合四官能的有機矽化合物與三官能的有機矽化合物作為式(1)所表示之有機矽化合物使用,可將金屬氧化物粒子彼此強化連結成鏈狀。其理由雖不明確,但推測係如下述。由於金屬氧化物粒子之連結部分的活性高,因此「a」為0之四官能的有機矽化合物容易吸附於金屬氧化物粒子的連結部分。並且,由於四官能的有機矽化合物容易水解,因此在醇之混合的同時,水解會進行,生成許多Si-OH。另一方面,「a」為1之三官能的有機矽化合物對於水的溶解度低,藉由與醇混合而溶解於水,水解會進行。因此,可考量係因三官能的有機矽化合物會先吸附於金屬氧化物粒子的連結部分,之後再對於已水解之四官能的有機矽化合物的Si-OH反應。As described above, by combining a tetrafunctional organosilicon compound and a trifunctional organosilicon compound as the organosilicon compound represented by the formula (1), the metal oxide particles can be reinforced and linked to each other in a chain shape. The reason for this is not clear, but is presumed as follows. Since the activity of the connecting portion of the metal oxide particles is high, the organosilicon compound in which "a" is a tetrafunctional of 0 is easily adsorbed to the connecting portion of the metal oxide particle. In addition, since the tetrafunctional organosilicon compound is easily hydrolyzed, the hydrolysis proceeds simultaneously with the mixing of the alcohol, and a large amount of Si-OH is generated. On the other hand, the organosilicon compound in which "a" is 1-ter-functional has low solubility in water, and is dissolved in water by mixing with alcohol, and hydrolysis proceeds. Therefore, it can be considered that the trifunctional organosilicon compound is first adsorbed to the connecting portion of the metal oxide particles, and then reacts with Si—OH of the hydrolyzed tetrafunctional organosilicon compound.
因此,在組合四官能的有機矽化合物與三官能的有機矽化合物使用的情況下,較佳為:並非將此等有機矽化合物同時與金屬氧化物粒子的水分散液混合,而係首先,將四官能的有機矽化合物與金屬氧化物粒子的水分散液混合後,在混合醇的同時混合三官能的有機矽化合物。Therefore, in the case of using a combination of a tetrafunctional organosilicon compound and a trifunctional organosilicon compound, it is preferable that these organosilicon compounds are not mixed with the aqueous dispersion of metal oxide particles at the same time, but firstly, the After the tetrafunctional organosilicon compound is mixed with the aqueous dispersion of metal oxide particles, the trifunctional organosilicon compound is mixed together with the alcohol.
作為水解性的有機矽化合物的具體例,可列舉:四甲氧基矽烷、四乙氧基矽烷等四烷氧基矽烷類;甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基三乙醯氧基矽烷、甲基三丙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三乙醯氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、苯基三乙醯氧基矽烷、γ-氯丙基三甲氧基矽烷、γ-氯丙基三乙氧基矽烷、γ-氯丙基三丙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基三乙氧基矽烷、γ-(β-環氧丙氧乙氧基)丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ-巰基丙基三乙氧基矽烷等三烷氧基或三醯氧基矽烷類;二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、苯基甲基二乙氧基矽烷、γ-環氧丙氧基丙基甲基二甲氧基矽烷、γ-環氧丙氧基丙基苯基二乙氧基矽烷、γ-氯丙基甲基二甲氧基矽烷、二甲基二乙醯氧基矽烷、γ-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、γ-巰基丙基甲基二甲氧基矽烷、γ-胺基丙基甲基二甲氧基矽烷等二烷氧基矽烷或二醯基矽烷類;三甲基氯矽烷等。此等可單獨使用1種,亦可以任意比率組合2種以上使用。Specific examples of the hydrolyzable organosilicon compound include tetraalkoxysilanes such as tetramethoxysilane and tetraethoxysilane; methyltrimethoxysilane, methyltriethoxysilane, methyl Triacetoxysilane, Methyltripropoxysilane, Ethyltrimethoxysilane, Ethyltriethoxysilane, Vinyltrimethoxysilane, Vinyltriethoxysilane, Vinyltriacetoxysilane Oxysilane, Phenyltrimethoxysilane, Phenyltriethoxysilane, Phenyltriacetoxysilane, γ-Chloropropyltrimethoxysilane, γ-Chloropropyltriethoxysilane, γ-Chloropropyltriethoxysilane -Chloropropyltripropoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-(β-glycidoxyethoxy Trimethoxysilane or trioxosilanes; dimethyldimethoxysilane, dimethyldiethoxysilane, phenylmethyldiethoxysilane, gamma-glycidoxypropylmethyldimethoxysilane Silane, γ-glycidoxypropylphenyldiethoxysilane, γ-chloropropylmethyldimethoxysilane, dimethyldiacetoxysilane, γ-methacryloyloxy Dialkoxysilanes such as propylpropylmethyldimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-aminopropylmethyldimethoxysilane, or diacylsilane; Trimethylchlorosilane, etc. These may be used individually by 1 type, and may be used in combination of 2 or more types at arbitrary ratios.
接下來,說明改質粒子(粒子表面經水解性的有機矽化合物處理的金屬氧化物粒子)的製造方法。在下述說明的製造方法中,改質粒子以分散液的狀態製造。Next, a method for producing modified particles (metal oxide particles whose surfaces are treated with a hydrolyzable organosilicon compound) will be described. In the production method described below, the modified particles are produced in the state of a dispersion liquid.
在改質粒子的製造方法中,準備成為處理對象的金屬氧化物粒子的水分散液。此時,水分散液中的金屬氧化物粒子的濃度,以1重量%以上為佳,以10重量%以上為較佳,且以40重量%以下為佳。In the method for producing modified particles, an aqueous dispersion of metal oxide particles to be treated is prepared. In this case, the concentration of the metal oxide particles in the aqueous dispersion is preferably 1% by weight or more, preferably 10% by weight or more, and preferably 40% by weight or less.
接下來,將前述水分散液的pH調整至以2以上為佳,以2.5以上為較佳,且以5以下為佳,以4以下為較佳。藉由將水分散液的pH設於前述範圍的下限值以上,由於可抑制金屬氧化物粒子之球狀的凝集,故容易使鏈狀的連結生成。並且,藉由設於上限值以下,金屬氧化物粒子在連結成鏈狀時,容易提高連結數。因此,由於容易使金屬氧化物粒子的平均連結數做成2以上之多,故容易提升抗靜電薄膜的抗靜電性能。Next, the pH of the aqueous dispersion is adjusted to preferably 2 or more, more preferably 2.5 or more, more preferably 5 or less, and more preferably 4 or less. By making the pH of an aqueous dispersion more than the lower limit of the said range, since spherical aggregation of a metal oxide particle can be suppressed, it becomes easy to generate|occur|produce a chain connection. In addition, when the metal oxide particles are connected in a chain shape, the number of connections can be easily increased by setting the value to be equal to or less than the upper limit value. Therefore, since it is easy to make the average number of connections of the metal oxide particles to be 2 or more, it is easy to improve the antistatic performance of the antistatic film.
作為調整pH的方法,可列舉:使用離子交換樹脂的離子交換處理法、混合酸的方法等。作為離子交換樹脂,以H型陽離子交換樹脂為佳。通常透過離子交換處理,可使水分散液的pH變化為酸性。並且,在光靠離子交換樹脂處理而pH無法充分變低的情況下,亦可視需求在水分散液中混合酸。As a method of adjusting pH, the ion-exchange treatment method using an ion-exchange resin, the method of mixing an acid, etc. are mentioned. As the ion exchange resin, H-type cation exchange resin is preferable. Usually, the pH of the aqueous dispersion can be changed to be acidic by ion exchange treatment. In addition, when pH cannot be lowered sufficiently by ion exchange resin treatment alone, an acid may be mixed with an aqueous dispersion as required.
並且,通常在離子交換處理時,由於亦進行去離子處理,故金屬氧化物粒子變得容易配向成鏈狀。In addition, since deionization treatment is generally performed during the ion exchange treatment, the metal oxide particles are easily aligned in a chain shape.
在調整pH後,以藉由濃縮或稀釋金屬氧化物粒子的水分散液,將該水分散液的固體成分濃度調整成適當範圍為佳。具體而言,將pH調整後的水分散液的固體成分濃度調整至以10重量%以上為佳,以15重量%以上為較佳,且以40重量%以下為佳,以35重量%以下為較佳。藉由將金屬氧化物粒子的水分散液的固體成分濃度設於前述範圍的下限值以上,可容易使金屬氧化物粒子的鏈狀的連結生成。因此,由於容易使金屬氧化物粒子的平均連結數做成3以上之多,故容易使抗靜電薄膜的抗靜電性能提升。並且,藉由設於上限值以下,可降低金屬氧化物粒子的水分散液的黏度而使透過攪拌的混合充分進行。因此,可使水解性的有機矽化合物均勻吸附於金屬氧化物粒子。After adjusting the pH, it is preferable to adjust the solid content concentration of the aqueous dispersion to an appropriate range by concentrating or diluting the aqueous dispersion of metal oxide particles. Specifically, the solid content concentration of the pH-adjusted aqueous dispersion is preferably adjusted to 10% by weight or more, preferably 15% by weight or more, more preferably 40% by weight or less, and preferably 35% by weight or less better. By setting the solid content concentration of the aqueous dispersion of metal oxide particles to be equal to or higher than the lower limit value of the aforementioned range, chain-like linkages of metal oxide particles can be easily formed. Therefore, since it is easy to make the average number of connections of the metal oxide particles as large as 3 or more, it is easy to improve the antistatic performance of the antistatic film. Furthermore, by setting it below an upper limit, the viscosity of the aqueous dispersion liquid of metal oxide particles can be reduced, and the mixing by stirring can be performed sufficiently. Therefore, the hydrolyzable organosilicon compound can be uniformly adsorbed to the metal oxide particles.
之後,將如前述操作準備的金屬氧化物粒子的水分散液與水解性的有機矽化合物混合。作為水解性的有機矽化合物,可列舉前述式(1)所表示之化合物。After that, the aqueous dispersion of metal oxide particles prepared as described above is mixed with the hydrolyzable organosilicon compound. As a hydrolyzable organosilicon compound, the compound represented by the said Formula (1) is mentioned.
水解性的有機矽化合物的量,得依該有機矽化合物的種類、金屬氧化物粒子的粒徑等要素而適當設定。金屬氧化物粒子與水解性的有機矽化合物之重量比(有機矽化合物/金屬氧化物粒子)以0.01以上為佳,以0.02以上為較佳,以0.5以下為佳,以0.3以下為較佳。在使用2種以上有機矽化合物的情況下,該有機矽化合物的合計量以滿足前述重量比的範圍為佳。藉由將前述重量比設於前述範圍的下限值以上,由於可抑制連結成鏈狀之金屬氧化物粒子的連結在抗靜電劑中斷裂,故可獲得具有優異抗靜電功能的抗靜電薄膜。並且,由於可提升抗靜電劑中之金屬氧化物粒子的分散性、降低抗靜電劑的黏度、使抗靜電劑的時間穩定性良好,故可降低抗靜電層的霧度。並且,藉由將重量比設於前述範圍的上限值以下,由於可抑制將金屬氧化物粒子的表面改質之有機矽化合物的水解物之層體不過份增厚,故可減小抗靜電層的表面電阻值。The amount of the hydrolyzable organosilicon compound can be appropriately set according to factors such as the type of the organosilicon compound and the particle size of the metal oxide particles. The weight ratio of the metal oxide particles to the hydrolyzable organosilicon compound (organosilicon compound/metal oxide particle) is preferably 0.01 or more, 0.02 or more, 0.5 or less, and 0.3 or less. In the case of using two or more kinds of organosilicon compounds, the total amount of the organosilicon compounds preferably satisfies the range of the aforementioned weight ratio. By making the said weight ratio more than the lower limit of the said range, since the connection of the metal oxide particle linked in a chain can be suppressed from being broken in an antistatic agent, the antistatic film which has an excellent antistatic function can be obtained. In addition, since the dispersibility of the metal oxide particles in the antistatic agent can be improved, the viscosity of the antistatic agent can be reduced, and the time stability of the antistatic agent can be improved, so that the haze of the antistatic layer can be reduced. In addition, by setting the weight ratio to be below the upper limit value of the aforementioned range, since the layer of the hydrolyzate of the organosilicon compound that modifies the surface of the metal oxide particles can be suppressed from being excessively thick, the antistatic can be reduced. The surface resistance value of the layer.
並且,於此所說明之改質粒子的製造方法中,藉由混合金屬氧化物粒子的水分散液與醇以進行將水解性的有機矽化合物水解的工序。此工序通常在混合金屬氧化物粒子的水分散液與水解性的有機矽化合物的工序後進行。惟如前所述,在組合四官能的有機矽化合物與三官能的有機矽化合物使用的情況下,較佳為:在將四官能的有機矽化合物與金屬氧化物粒子的水分散液混合後,將醇混合於此水分散液中,在混合金屬氧化物粒子的水分散液與醇的同時或之後,將三官能的有機矽化合物混合於金屬氧化物粒子的水分散液中。And, in the manufacturing method of the modified particle demonstrated here, the process of hydrolyzing a hydrolyzable organosilicon compound is performed by mixing the aqueous dispersion liquid of a metal oxide particle and an alcohol. This step is usually performed after the step of mixing the aqueous dispersion of metal oxide particles and the hydrolyzable organosilicon compound. However, as mentioned above, in the case of using a combination of a tetrafunctional organosilicon compound and a trifunctional organosilicon compound, it is preferable to: after mixing the tetrafunctional organosilicon compound and the aqueous dispersion of metal oxide particles, The alcohol is mixed into this aqueous dispersion, and the trifunctional organosilicon compound is mixed into the aqueous dispersion of metal oxide particles at the same time or after mixing the aqueous dispersion of metal oxide particles and the alcohol.
作為醇,可列舉例如:甲醇、乙醇、正丙醇、異丙醇、丁醇等。此等醇可單獨使用1種,亦可以任意比率組合2種以上使用。並且,亦可使用乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丁基醚、丙二醇單甲基醚、丙二醇單乙基醚等有機溶劑組合於前述醇。As an alcohol, methanol, ethanol, n-propanol, isopropanol, butanol etc. are mentioned, for example. These alcohols may be used alone or in combination of two or more at any ratio. In addition, organic solvents such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether may be used in combination with the aforementioned alcohol.
醇的量以調整成與醇混合後的金屬氧化物粒子的水分散液之固體成分濃度(包含有機矽化合物的全固體成分。有機矽化合物為二氧化矽換算。)收束在預期範圍為佳。於此,水分散液的固體成分濃度的期望範圍,以3重量%以上為佳,以5重量%以上為較佳,且以30重量%以下為佳,以25重量%以下為較佳。The amount of the alcohol is adjusted so that the solid content concentration of the aqueous dispersion of the metal oxide particles mixed with the alcohol (including the total solid content of the organosilicon compound. The organosilicon compound is converted to silica.) is preferably condensed within a desired range. . Here, the desired range of the solid content concentration of the aqueous dispersion is preferably 3 wt % or more, more preferably 5 wt % or more, and preferably 30 wt % or less, more preferably 25 wt % or less.
水解時的溫度以30℃以上為佳,以40℃以上為較佳。水解時的溫度的上限通常係使用溶劑的沸點(大約100℃)以下。藉由將水解時的溫度設於前述下限值以上,可減短水解所需要的時間、抑制水解性的有機矽化合物的殘存,並且,藉由設於上限值以下,由於可使所獲得之改質粒子的穩定性良好,故可抑制粒子的過度凝集。The temperature at the time of hydrolysis is preferably 30°C or higher, more preferably 40°C or higher. The upper limit of the temperature at the time of hydrolysis is usually below the boiling point (about 100° C.) of the solvent used. By setting the temperature at the time of hydrolysis to be equal to or higher than the lower limit value, the time required for the hydrolysis can be shortened and the residual of the hydrolyzable organosilicon compound can be suppressed. The stability of the modified particles is good, so excessive aggregation of the particles can be suppressed.
再者,亦可視需求將酸混合於金屬氧化物粒子的水分散液中作為水解催化劑。作為酸,可列舉:鹽酸、硝酸、醋酸、磷酸。並且,酸可單獨使用1種,亦可以任意比率組合2種以上使用。Furthermore, an acid can also be mixed into the aqueous dispersion of metal oxide particles as a hydrolysis catalyst as required. Examples of the acid include hydrochloric acid, nitric acid, acetic acid, and phosphoric acid. In addition, an acid may be used individually by 1 type, and may be used in combination of 2 or more types at arbitrary ratios.
將有機矽化合物水解時的操作之合適具體例係如同下述。A suitable specific example of the operation at the time of hydrolyzing the organosilicon compound is as follows.
首先,將式(1)中「a」為0之四官能的有機矽化合物與金屬氧化物粒子的水分散液混合,將此水分散液與醇混合以進行四官能的有機矽化合物的水解。之後,將水分散液冷卻至室溫,視需求再次與前述醇混合。之後,將式(1)中「a」為1之三官能的有機矽化合物與前述水分散液混合,升溫至適合前述水解的溫度以進行水解。藉此,透過四官能的有機矽化合物的水解物,可維持金屬氧化物粒子之鏈狀的連結。再者,由於促進三官能的有機矽化合物的水解物之對於金屬氧化物粒子之表面的鍵結,故可提升金屬氧化物粒子的分散性。First, a tetrafunctional organosilicon compound in which "a" in formula (1) is 0 is mixed with an aqueous dispersion of metal oxide particles, and the aqueous dispersion is mixed with alcohol to hydrolyze the tetrafunctional organosilicon compound. After that, the aqueous dispersion is cooled to room temperature, and is mixed with the aforementioned alcohol again if necessary. Then, the organosilicon compound in which "a" in the formula (1) is 1-trifunctional is mixed with the aforementioned aqueous dispersion, and the temperature is raised to a temperature suitable for the aforementioned hydrolysis to perform hydrolysis. Thereby, the chain connection of the metal oxide particles can be maintained through the hydrolyzate of the tetrafunctional organosilicon compound. Furthermore, since the bonding of the hydrolyzate of the trifunctional organosilicon compound to the surface of the metal oxide particles is promoted, the dispersibility of the metal oxide particles can be improved.
藉由如前述般水解有機矽化合物,透過有機矽化合物的水解物將金屬氧化物粒子的表面改質而可獲得改質粒子。在緊接於進行水解之後,前述改質粒子可以分散於水等溶劑之分散液的狀態獲得。此改質粒子的分散液得直接使用於抗靜電劑的製備,但亦可視需求施以清洗處理或去離子處理。藉由透過去離子處理降低離子濃度,可獲得穩定性優異的改質粒子的分散液。此去離子處理,舉例而言,得使用陽離子交換樹脂、陰離子交換樹脂、兩性離子交換樹脂等離子交換樹脂進行。並且,清洗處理,舉例而言,得使用超過濾透膜法等進行。The modified particles can be obtained by hydrolyzing the organosilicon compound as described above and modifying the surface of the metal oxide particles through the hydrolyzate of the organosilicon compound. Immediately after the hydrolysis, the modified particles can be obtained in a state of being dispersed in a dispersion liquid of a solvent such as water. The dispersion of the modified particles can be directly used in the preparation of the antistatic agent, but it can also be subjected to cleaning treatment or deionization treatment as required. By reducing the ion concentration by deionization treatment, a dispersion liquid of modified particles excellent in stability can be obtained. This deionization treatment can be performed, for example, using an ion exchange resin such as a cation exchange resin, an anion exchange resin, and a zwitterion exchange resin. In addition, the cleaning treatment can be performed, for example, using an ultrafiltration permeable membrane method or the like.
再者,所獲得之改質粒子的分散液,亦可視需求在進行溶劑取代後使用。若進行溶劑取代,則對於丙烯酸酯系黏合劑組成物及極性溶劑之分散性提升。因此,可提升抗靜電劑的塗布性。因此,可使抗靜電層的表面的平滑性良好、抑制抗靜電層中之條紋及斑紋不均等外觀上的缺陷的產生。再者,可提升抗靜電層的耐擦傷性、透明性、密合性並減小霧度。並且,可提升抗靜電薄膜的製造可靠性。Furthermore, the obtained dispersion liquid of modified particles can also be used after being substituted with a solvent according to requirements. When solvent substitution is performed, the dispersibility with respect to the acrylate-based adhesive composition and polar solvent is improved. Therefore, the coatability of the antistatic agent can be improved. Therefore, the smoothness of the surface of the antistatic layer can be improved, and the occurrence of appearance defects such as streaks and unevenness in the antistatic layer can be suppressed. Furthermore, the scratch resistance, transparency, and adhesiveness of the antistatic layer can be improved, and the haze can be reduced. Also, the manufacturing reliability of the antistatic film can be improved.
並且,所獲得之改質粒子的分散液,亦可視需求與水混合使用。藉由與水混合,通常改質粒子的連結數會增加而所獲得之抗靜電層的導電性會提升。因此,由於可獲得具有大約102 Ω/□~1012 Ω/□的表面電阻值的抗靜電層,故可獲得抗靜電性優異的抗靜電薄膜。In addition, the obtained dispersion of modified particles can also be mixed with water as required. By mixing with water, the number of linkages of the modified particles is generally increased and the conductivity of the obtained antistatic layer is increased. Therefore, since an antistatic layer having a surface resistance value of about 10 2 Ω/□ to 10 12 Ω/□ can be obtained, an antistatic film excellent in antistatic property can be obtained.
具有上述導電性的金屬氧化物粒子(包含改質粒子。),通常在包含該金屬氧化物粒子的分散液或抗靜電劑中連結成鏈狀。而且,由於此種連結即使在抗靜電層中亦受到維持,故藉由連結的金屬氧化物粒子,於抗靜電層形成導電路徑。因此,抗靜電層推測可發揮優異的抗靜電性。並且,由於金屬氧化物粒子並非凝集成粒狀,而係以連結成鏈狀之方式凝集,故金屬氧化物粒子難以形成如得產生可見光散射般大的凝集塊。因此,推測能夠降低包含此種金屬氧化物粒子的抗靜電層的霧度。惟本發明並非限制於前述推測者。The metal oxide particles (including modified particles) having the above-mentioned conductivity are usually linked in a chain shape in a dispersion liquid or an antistatic agent containing the metal oxide particles. Furthermore, since this connection is maintained even in the antistatic layer, conductive paths are formed in the antistatic layer by the connected metal oxide particles. Therefore, the antistatic layer is presumed to exhibit excellent antistatic properties. In addition, since the metal oxide particles are not aggregated into particles, but aggregated in a chain-like manner, it is difficult for the metal oxide particles to form aggregates as large as visible light scattering. Therefore, it is presumed that the haze of the antistatic layer containing such metal oxide particles can be reduced. However, the present invention is not limited to the aforesaid speculation.
金屬氧化物粒子的平均連結數以2個以上為佳,以3個以上為較佳,尤以5個以上為佳。藉由將金屬氧化物粒子的平均連結數設於前述下限值以上,可提高抗靜電層的抗靜電性能。金屬氧化物粒子的平均連結數的上限,以20個以下為佳,以10個以下為較佳。藉由將金屬氧化物粒子的平均連結數設於前述上限值以下,可輕易進行連結成鏈狀之金屬氧化物粒子的製造。The average number of connections of the metal oxide particles is preferably 2 or more, preferably 3 or more, and particularly preferably 5 or more. The antistatic performance of an antistatic layer can be improved by making the average number of connection of metal oxide particles more than the said lower limit. The upper limit of the average number of connections of the metal oxide particles is preferably 20 or less, more preferably 10 or less. By setting the average number of connections of the metal oxide particles to be equal to or less than the above-mentioned upper limit value, the production of chain-like metal oxide particles can be easily performed.
於此,金屬氧化物粒子的平均連結數得藉由下述方法量測。Here, the average number of connections of the metal oxide particles can be measured by the following method.
藉由穿透型顯微鏡拍攝金屬氧化物粒子的鏈狀連結體的照片。自此照片,針對金屬氧化物粒子的鏈狀連結體100個,求出各個鏈狀連結體中的連結數。然後,計算各鏈狀連結體之連結數的平均值,將小數點後第1位四捨五入,獲得金屬氧化物粒子的平均連結數。Photographs of chain-like linkages of metal oxide particles were taken with a transmission microscope. From this photograph, with respect to 100 chain-like connected bodies of metal oxide particles, the number of connections in each of the chain-like connected bodies was determined. Then, the average value of the number of connections of each chain-like connection body was calculated, and the average number of connections of the metal oxide particles was obtained by rounding off the first decimal place.
於抗靜電層中,金屬氧化物粒子的量通常為25重量%以上,以27重量%以上為佳,以43重量%以上為較佳,尤以58重量%以上為佳,且通常為200重量%以下,以198重量%以下為佳,以98重量%以下為較佳,尤以78重量%以下為佳。藉由將金屬氧化物粒子的量設於前述範圍的下限值以上,可減小抗靜電層的表面電阻值,使抗靜電性能良好。並且,藉由設於上限值以下,由於可減小抗靜電層的霧度,故可提升抗靜電薄膜的透明性,同時可將抗靜電層的耐擦傷性維持在一定值以上。In the antistatic layer, the amount of metal oxide particles is usually 25 wt % or more, preferably 27 wt % or more, preferably 43 wt % or more, especially 58 wt % or more, and usually 200 wt % % or less, preferably 198 wt % or less, more preferably 98 wt % or less, particularly preferably 78 wt % or less. By making the amount of the metal oxide particles more than the lower limit value of the aforementioned range, the surface resistance value of the antistatic layer can be reduced, and the antistatic performance can be improved. In addition, by setting it below the upper limit value, the haze of the antistatic layer can be reduced, so that the transparency of the antistatic film can be improved, and the scratch resistance of the antistatic layer can be maintained at or above a certain value.
於抗靜電層中,金屬氧化物粒子之相對於丙烯酸酯系黏合劑組成物的比率為特定範圍。金屬氧化物粒子之相對於丙烯酸酯系黏合劑組成物的重量比為27重量%以上,以45重量%以上為佳,以60重量%以上為較佳,另一方面為200重量%以下,以100重量%以下為佳,以80重量%以下為較佳。藉由將金屬氧化物粒子之相對於丙烯酸酯型黏合劑組成物的比率設於前述下限值以上,可減小抗靜電層的表面電阻值,使抗靜電性能良好。並且,藉由設於前述上限值以下,由於可減小抗靜電層的霧度,故可提升抗靜電薄膜的透明性,同時可將抗靜電層的耐擦傷性維持在一定值以上。In the antistatic layer, the ratio of the metal oxide particles to the acrylate-based adhesive composition is within a specific range. The weight ratio of the metal oxide particles to the acrylate-based binder composition is 27% by weight or more, preferably 45% by weight or more, more preferably 60% by weight or more, and 200% by weight or less, and 100% by weight or less is preferable, and 80% by weight or less is more preferable. By making the ratio of the metal oxide particle with respect to the acrylate type adhesive composition more than the said lower limit, the surface resistance value of an antistatic layer can be made small, and an antistatic performance can be made favorable. Furthermore, by setting it below the said upper limit, since the haze of an antistatic layer can be reduced, the transparency of an antistatic film can be improved, and the scratch resistance of an antistatic layer can be maintained at a certain value or more.
[3.3.任意成分][3.3. Arbitrary components]
抗靜電層,只要不明顯損及本發明之效果,除了上述丙烯酸酯系黏合劑組成物及金屬氧化物粒子以外,亦可含有任意成分。The antistatic layer may contain any components other than the above-mentioned acrylate-based adhesive composition and metal oxide particles, as long as the effects of the present invention are not significantly impaired.
[3.4.抗靜電層的殘留雙鍵率Dre][3.4. Residual double bond ratio Dre of antistatic layer]
抗靜電層的殘留雙鍵率Dre滿足2.5<Dre<6.1。於此,殘留雙鍵率Dre藉由下述式而定義。 Dre=((AC - H /AC = O )×(Wa/(Wa+Wm)))×100The residual double bond ratio Dre of the antistatic layer satisfies 2.5<Dre<6.1. Here, the residual double bond ratio Dre is defined by the following formula. Dre=((A C - H /A C = O )×(Wa/(Wa+Wm)))×100
於上述式中,AC - H 係前述抗靜電層之紅外線吸收光譜中的丙烯酸酯結構所具有之C-H鍵結的面外彎曲振動相關的紅外線吸收,AC - O 係前述抗靜電層之紅外線吸收光譜中的丙烯酸酯結構所具有之C=O鍵結的伸縮振動的紅外線吸收與源自丙烯酸酯結構之C=O鍵結的C=O鍵結的伸縮振動的紅外線吸收之和,Wa/(Wa+Wm)係丙烯酸酯系黏合劑組成物之相對於丙烯酸酯系黏合劑組成物及金屬氧化物粒子的重量比率。In the above formulas, A C - H infrared-based antistatic layer to absorb the C-H bond of the acrylate structural spectrum has an outer surface of the bending vibration associated infrared absorption, A C - O-based antistatic layer the In the infrared absorption spectrum, the sum of the infrared absorption of the stretching vibration of the C=O bond of the acrylate structure and the infrared absorption of the stretching vibration of the C=O bond of the C=O bond of the acrylate structure, The weight ratio of the Wa/(Wa+Wm)-based acrylate-based binder composition to the acrylate-based binder composition and the metal oxide particles.
Wa係單位體積之抗靜電層中的丙烯酸酯黏合劑組成物的含有重量,Wm係單位體積之抗靜電層中的金屬氧化物粒子的含有重量。Wa is the content weight of the acrylate adhesive composition per unit volume of the antistatic layer, and Wm is the content weight of the metal oxide particles per unit volume of the antistatic layer.
Wa及Wm通常可分別作為摻合於用以獲得抗靜電層的抗靜電劑之烯酸酯系聚合性單體的重量及金屬氧化物粒子的重量,Wa/(Wa+Wm)通常可作為抗靜電劑中的丙烯酸酯系聚合性單體之相對於丙烯酸酯系聚合性單體及金屬氧化物粒子的重量比率。Wa and Wm are generally used as the weight of the alkenoate-based polymerizable monomer and the weight of the metal oxide particles to be blended in the antistatic agent for obtaining the antistatic layer, respectively, and Wa/(Wa+Wm) is generally used as the antistatic agent The weight ratio of the acrylate-based polymerizable monomer to the acrylate-based polymerizable monomer and the metal oxide particles.
抗靜電層的紅外線吸收光譜,舉例而言,可藉由全反射量測法(ATR法)而量測。The infrared absorption spectrum of the antistatic layer can be measured, for example, by total reflection measurement (ATR method).
作為量測裝置,得使用Perkinelmer製「Spectrum Spotlight 300」。As the measuring device, "Spectrum Spotlight 300" manufactured by Perkinelmer was used.
若丙烯酸酯聚合,則丙烯酸酯結構所具有之乙烯基會轉換成伸乙基,鍵結於乙烯基之羰基成為鍵結於伸乙基之羰基。所謂「源自丙烯酸酯結構之C=O鍵結的C=O鍵結」,意指因丙烯酸酯聚合而出現之鍵結於伸乙基之羰基的C=O鍵結。If the acrylate is polymerized, the vinyl group in the acrylate structure will be converted into an ethyl extension, and the carbonyl group bonded to the vinyl group will become a carbonyl group bonded to the ethyl extension. The "C=O bond derived from the C=O bond of the acrylate structure" means the C=O bond bonded to the carbonyl group of the ethylidene group, which occurs due to the polymerization of the acrylate.
在丙烯酸酯結構所具有之C=O鍵結的伸縮振動相關的峰值與源自丙烯酸酯結構之C=O鍵結的C=O鍵結的伸縮振動相關的峰值不分離而成為單一峰值的情況下,可將此單一峰值的紅外線吸收作為丙烯酸酯結構所具有之C=O鍵結的伸縮振動相關的紅外線吸收與源自丙烯酸酯結構的C=O鍵結的C=O鍵結的伸縮振動相關的紅外線吸收之和。When the peak related to the stretching vibration of the C=O bond in the acrylate structure and the peak related to the stretching vibration of the C=O bond derived from the C=O bond of the acrylate structure are not separated and become a single peak The infrared absorption of this single peak can be regarded as the infrared absorption related to the stretching vibration of the C=O bond of the acrylate structure and the stretching vibration of the C=O bond derived from the C=O bond of the acrylate structure. The sum of the associated infrared absorptions.
作為AC - H /AC = O 的值,可使用將丙烯酸酯結構所具有之C-H鍵結的面外彎曲振動相關的峰值的面積(areaC - H )除以丙烯酸酯結構所具有之C=O鍵結的伸縮振動相關的峰值的面積及源自丙烯酸酯結構的C=O鍵結的C=O鍵結的伸縮振動相關的峰值的面積之和(areaC = O )的值(areaC - H /areaC = O )。As the value of A C - H /A C = O , the area (area C - H ) of the peak related to the out-of-plane bending vibration of the C-H bond possessed by the acrylate structure can be used divided by the value possessed by the acrylate structure. The value of the area of the peaks related to the stretching vibration of the C=O bond and the area of the peaks related to the stretching vibration of the C=O bond derived from the C=O bond of the acrylate structure (area C = O ) value (area C - H /area C = O ).
於紅外線吸收光譜中,丙烯酸酯結構所具有之C-H鍵結的面外彎曲振動相關的峰值,通常出現在810cm−1 附近。並且,丙烯酸酯結構所具有之C=O鍵結的伸縮振動相關的峰值及源自丙烯酸酯結構的C=O鍵的C=O鍵結的伸縮振動相關的峰值,通常皆出現於1720cm−1 附近。In the infrared absorption spectrum, the peaks related to the out-of-plane bending vibration of the C-H bond of the acrylate structure usually appear around 810cm −1 . In addition, the peaks related to the stretching vibration of the C=O bond in the acrylate structure and the peaks related to the stretching vibration of the C=O bond derived from the C=O bond of the acrylate structure usually appear at 1720 cm −1 nearby.
AC - H /AC = O 之值係依丙烯酸酯系黏合劑組成物所包含之未反應的丙烯酸酯結構的量而定的值,Dre的值係依抗靜電層的單位體積所包含之未反應的丙烯酸酯結構的量而定的值。The value of A C - H /A C = O depends on the amount of unreacted acrylate structures contained in the acrylate adhesive composition, and the value of Dre depends on the amount contained in the unit volume of the antistatic layer. The value depends on the amount of unreacted acrylate structures.
藉由Dre的值滿足2.5<Dre<6.1,可獲得抗靜電性良好且耐光性優異的抗靜電薄膜。抗靜電性得藉由量測抗靜電層的表面電阻值而確認。耐光性優異得藉由耐光性試驗後的抗靜電薄膜的電阻值變化率小而確認。關於表面電阻值及電阻值變化率,詳述於後。When the value of Dre satisfies 2.5<Dre<6.1, an antistatic film having good antistatic properties and excellent light resistance can be obtained. The antistatic property can be confirmed by measuring the surface resistance value of the antistatic layer. Excellent light resistance was confirmed by the fact that the resistance value change rate of the antistatic film after the light resistance test was small. The surface resistance value and the resistance value change rate will be described in detail later.
藉由Dre的值滿足2.5<Dre<6.1,可獲得抗靜電性良好且耐光性優異的抗靜電薄膜的理由尚未明確,但推測如下。The reason why an antistatic film with good antistatic properties and excellent light resistance can be obtained by satisfying the value of Dre 2.5<Dre<6.1 is not clear, but is presumed as follows.
雖可謂抗靜電層的電阻值愈低則抗靜電層的抗靜電性能愈良好,但推測金屬氧化物粒子愈良好分散於層中,抗靜電層的電阻值愈成為低的值。Although it can be said that the lower the resistance value of the antistatic layer is, the better the antistatic performance of the antistatic layer is, but it is presumed that the better the metal oxide particles are dispersed in the layer, the lower the resistance value of the antistatic layer is.
在抗靜電層的製造過程中或在耐光性試驗中,推測若急遽聚合丙烯酸酯系聚合性單體而做成丙烯酸酯系黏合劑聚合物,則抗靜電層的體積會急遽收縮,由於分散於丙烯酸酯系黏合劑組成物的金屬氧化物粒子凝集成粒狀,故抗靜電層的電阻值會上升。推測藉由將Dre的值做成滿足2.5<Dre<6.1者,可將在抗靜電層的製造過程中或耐光性試驗中聚合之丙烯酸酯系聚合性單體的量控制在金屬氧化物粒子不凝集成粒狀的程度,其結果可實現抗靜電性良好且耐光性試驗後的電阻值變化率小的抗靜電薄膜。In the production process of the antistatic layer or in the light resistance test, it is presumed that if the acrylate-based binder polymer is formed by rapidly polymerizing the acrylate-based polymerizable monomer, the volume of the antistatic layer will be rapidly shrunk. Since the metal oxide particles of the acrylate-based adhesive composition are aggregated into a granular form, the resistance value of the antistatic layer increases. It is presumed that by setting the value of Dre to satisfy 2.5<Dre<6.1, the amount of the acrylate-based polymerizable monomer polymerized in the production process of the antistatic layer or in the light resistance test can be controlled so that the metal oxide particles do not As a result, it is possible to obtain an antistatic film with good antistatic properties and a small resistance value change rate after the light resistance test.
惟本發明不依上述推測而限定。However, the present invention is not limited by the above speculation.
Dre的值大於2.5,以3.2以上為佳,以3.7以上為較佳。藉由使Dre的值為如此之大,得做成抗靜電性良好的抗靜電薄膜。The value of Dre is greater than 2.5, preferably 3.2 or more, and more preferably 3.7 or more. By making the value of Dre so large, an antistatic film with good antistatic properties can be obtained.
Dre的值未達6.1,以5.4以下為佳,以4.8以下為較佳。藉由使Dre的值為如此之小,得將抗靜電薄膜的電阻值變化率做成小者,而做成耐光性優異的抗靜電薄膜。The value of Dre is less than 6.1, preferably less than 5.4, more preferably less than 4.8. By making the value of Dre so small, the resistance value change rate of the antistatic film can be made smaller, and an antistatic film excellent in light resistance can be obtained.
Dre的值,在抗靜電層的製造過程中,得藉由調整所照射之活性能量線的照射強度及時間而控制。The value of Dre can be controlled by adjusting the irradiation intensity and time of the active energy ray to be irradiated during the production process of the antistatic layer.
[3.5.抗靜電層的表面電阻值][3.5. Surface resistance value of antistatic layer]
抗靜電層的表面電阻值以1.0×106 Ω/□以上為佳,以1.0×107 Ω/□以上為較佳,以1.0×108 Ω/□以上為更佳,尤以1.5×108 Ω/□以上為佳,且以7.0×108 Ω/□以下為佳,以6.0×108 Ω/□以下為較佳,尤以5.5×108 Ω/□以下為佳。The surface resistance value of the antistatic layer is preferably 1.0×10 6 Ω/□ or higher, preferably 1.0×10 7 Ω/□ or higher, more preferably 1.0×10 8 Ω/□ or higher, especially 1.5×10 8 Ω/□ or more is preferable, and preferably 7.0×10 8 Ω/□ or less, preferably 6.0×10 8 Ω/□ or less, especially 5.5×10 8 Ω/□ or less.
抗靜電層的表面電阻值愈低,抗靜電性愈良好。The lower the surface resistance value of the antistatic layer, the better the antistatic property.
由於有「上述殘留鍵結雙鍵率Dre值愈小,表面電阻值愈高;Dre值愈大,表面電阻值愈低」的傾向,故藉由控制殘留鍵結雙鍵率Dre,得將表面電阻值做成上述範圍。Since there is a tendency that "the smaller the residual double bond ratio Dre, the higher the surface resistance value; the larger the Dre value, the lower the surface resistance value", so by controlling the residual double bond ratio Dre, the surface resistance can be improved. The resistance value is set in the above-mentioned range.
抗靜電層的表面電阻值得藉由遵循JIS K6911的量測法而量測。作為量測裝置,得使用Mitsubishi Chemical Analytech Co., Ltd.製「HIRESTA-UX MCP-HT800」。The surface resistance value of the antistatic layer is measured by a measurement method in accordance with JIS K6911. As a measuring apparatus, "HIRESTA-UX MCP-HT800" manufactured by Mitsubishi Chemical Analytech Co., Ltd. was used.
[3.6.抗靜電層的電阻值變化率][3.6. Rate of change of resistance value of antistatic layer]
根據本發明的抗靜電薄膜,可將透過紫外線照射之耐光性試驗後的抗靜電層的電阻值變化率做成小者。According to the antistatic film of the present invention, the resistance value change rate of the antistatic layer after the light resistance test by ultraviolet irradiation can be made smaller.
於此,耐光性試驗後的抗靜電層的電阻值變化率,意謂遵照下述實施例的項目(初始電阻值的量測方法)及項目(耐光性試驗)所記載的方法量測的數值,電阻值變化率係藉由耐光性試驗後的電阻值(R1)/初始電阻值(R0)算出。Here, the resistance value change rate of the antistatic layer after the light resistance test means the numerical value measured according to the method described in the item (measurement method of initial resistance value) and item (light resistance test) of the following examples , the resistance value change rate is calculated from the resistance value (R1)/initial resistance value (R0) after the light resistance test.
本發明之抗靜電薄膜,抗靜電層之透過紫外線照射的耐光性試驗後的電阻值變化率以1.0以上為佳,以大於1.0為較佳,以1.7以上為更佳,尤以1.8以上為佳,且以未達4.7為佳,以4.1以下為較佳,尤以3.5以下為佳。In the antistatic film of the present invention, the resistance value change rate of the antistatic layer after the light resistance test through ultraviolet irradiation is preferably 1.0 or more, preferably more than 1.0, more preferably 1.7 or more, especially preferably 1.8 or more. , and preferably less than 4.7, preferably below 4.1, especially preferably below 3.5.
愈將殘留鍵結雙鍵率Dre增大,初始電阻值有愈小而電阻值變化率愈大的傾向;愈將殘留鍵結雙鍵率Dre減小,初始電阻值有愈大而電阻值變化率愈小的傾向。因此,藉由控制殘留雙鍵率Dre,得將初始電阻值與電阻值變化率做成指定範圍內者。The more the residual double bond rate Dre is increased, the smaller the initial resistance value and the greater the resistance value change rate; the more the residual bond double bond rate Dre is decreased, the greater the initial resistance value is and the resistance value changes tend to be smaller. Therefore, by controlling the residual double bond ratio Dre, the initial resistance value and the resistance value change rate can be set within a specified range.
[3.7.抗靜電層的結構][3.7. Structure of antistatic layer]
抗靜電層亦可具有具備2層以上之層的多層結構,但以具有僅由1層而成之單層結構為佳。藉由抗靜電層具有單層結構,可輕易製造抗靜電層且可薄化抗靜電薄膜的厚度。The antistatic layer may have a multilayer structure having two or more layers, but it is preferable to have a single-layer structure consisting of only one layer. Since the antistatic layer has a single-layer structure, the antistatic layer can be easily fabricated and the thickness of the antistatic film can be reduced.
抗靜電層的厚度以0.5μm以上為佳,以0.8μm以上為較佳,尤以1.0μm以上為佳,且以10.0μm以下為佳,以5.0μm以下為較佳,尤以3.0μm以下為佳。The thickness of the antistatic layer is preferably 0.5 μm or more, preferably 0.8 μm or more, especially 1.0 μm or more, and preferably 10.0 μm or less, preferably 5.0 μm or less, especially 3.0 μm or less. good.
抗靜電層的厚度得以干涉式膜厚計(Filmetrics公司製「F20膜厚量測系統」)量測。The thickness of the antistatic layer was measured with an interferometric film thickness meter (“F20 film thickness measurement system” manufactured by Filmetrics).
[4.抗靜電薄膜的物性及形狀][4. Physical properties and shape of antistatic film]
[4.1.折射率][4.1. Refractive index]
抗靜電層與基材薄膜之折射率差的絕對值以0.1以下為佳,以0.07以下為較佳,尤以0.05以下為佳。藉由將折射率差的絕對值設為如此之小,可抑制在基材薄膜層與抗靜電層的界面之光的反射,其結果,可將抗靜電薄膜做成透明性優異者,並且得抑制在抗靜電薄膜上出現光的干涉圖案。並且,由於可做成難以辨識到抗靜電層的塗布不均及光點不均,故容易使抗靜電薄膜的外觀變良好。The absolute value of the refractive index difference between the antistatic layer and the base film is preferably 0.1 or less, preferably 0.07 or less, and particularly preferably 0.05 or less. By making the absolute value of the refractive index difference so small, the reflection of light at the interface between the base film layer and the antistatic layer can be suppressed, and as a result, the antistatic film can be made into one with excellent transparency, and the Suppresses the appearance of interference patterns of light on the antistatic film. In addition, since the coating unevenness and light spot unevenness of the antistatic layer can be hardly recognized, the appearance of the antistatic film can be easily improved.
[4.2.抗靜電薄膜的霧度值][4.2. Haze value of antistatic film]
抗靜電薄膜的霧度值以0.3%以下為佳,以0.2%以下為較佳,尤以0.1%以下為佳。抗靜電薄膜的霧度值的下限,理想上得做成0%。The haze value of the antistatic film is preferably below 0.3%, preferably below 0.2%, especially preferably below 0.1%. The lower limit of the haze value of the antistatic film is ideally 0%.
抗靜電薄膜的霧度值,得遵循JIS K7136使用霧度計(東洋精機公司製「HAZE-GARD II」)而量測。The haze value of the antistatic film can be measured using a haze meter (“HAZE-GARD II” manufactured by Toyo Seiki Co., Ltd.) in accordance with JIS K7136.
[4.3.抗靜電薄膜的全光線穿透率][4.3. Total light transmittance of antistatic film]
抗靜電薄膜的全光線穿透率以85%以上為佳,以86%以上為較佳,尤以87%以上為佳。抗靜電薄膜的全光線穿透率的上限,理想上得做成100%。The total light transmittance of the antistatic film is preferably above 85%, preferably above 86%, especially preferably above 87%. The upper limit of the total light transmittance of the antistatic film should ideally be 100%.
抗靜電薄膜的全光線穿透率,得使用紫外/可見光分光計在波長380nm~780nm的範圍量測。The total light transmittance of the antistatic film must be measured with a UV/Vis spectrometer in the wavelength range of 380nm to 780nm.
抗靜電薄膜的全光線穿透率得遵循JIS K7361-1而量測。作為量測裝置,得使用霧度計(東洋精機公司製「HAZE-GARD II」)。The total light transmittance of the antistatic film is measured in accordance with JIS K7361-1. As a measuring device, a haze meter (“HAZE-GARD II” manufactured by Toyo Seiki Co., Ltd.) was used.
[4.4.抗靜電薄膜的形狀][4.4. Shape of antistatic film]
本發明之抗靜電薄膜的形狀並無限定,可為長條狀的薄膜,亦可為裁成一定大小的薄膜。通常就提高製造效率的觀點而言,抗靜電薄膜係作為長條狀的薄膜而製造。在本發明之抗靜電薄膜為長條狀的薄膜的情況下,通常薄膜收捲成輥狀。並且,在製造裁成一定大小的抗靜電薄膜的情況下,通常藉由將長條狀的抗靜電薄膜切成預期形狀而製造裁成一定大小的抗靜電薄膜。The shape of the antistatic film of the present invention is not limited, and it can be a long film or a film cut into a certain size. Generally, an antistatic film is produced as a long film from the viewpoint of improving production efficiency. When the antistatic film of the present invention is an elongated film, the film is usually wound into a roll shape. Also, in the case of manufacturing the antistatic film cut into a certain size, the antistatic film cut into a certain size is usually produced by cutting the long antistatic film into a desired shape.
[5.抗靜電薄膜的製造方法][5. Manufacturing method of antistatic film]
本發明之抗靜電薄膜,得藉由將包含丙烯酸酯系聚合性單體及金屬氧化物粒子的抗靜電劑塗布在前述基材薄膜上形成抗靜電層而製造。The antistatic film of the present invention can be produced by coating an antistatic agent containing an acrylate-based polymerizable monomer and metal oxide particles on the aforementioned base film to form an antistatic layer.
丙烯酸酯系聚合性單體,通常得藉由紫外線等活性能量線的照射而聚合。因此,抗靜電劑以包含光聚合起始劑為佳。作為光聚合起始劑,可列舉例如:安息香衍生物、二醇縮聯苯甲醯類、α-羥苯乙酮類、α-胺苯乙酮類、氧化醯膦類、O-醯肟類等。並且,作為市售的光聚合起始劑,可列舉例如:二苯甲酮/胺、米其勒酮/二苯甲酮、硫代𠮿口 星酮/胺等組合(商品名:IRGACURE或DAROCUR等,Ciba-Geigy公司製)等。光聚合起始劑可單獨使用1種,亦可以任意比率組合2種以上使用。Acrylate-based polymerizable monomers are usually polymerized by irradiation with active energy rays such as ultraviolet rays. Therefore, the antistatic agent preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, benzoin derivatives, diol condensed benzoyls, α-hydroxyacetophenones, α-aminoacetophenones, phosphine oxides, O-oximes Wait. Further, as commercially available photopolymerization initiators include, for example: benzophenone / amine, which meter Le ketone / benzophenone, thio 𠮿 port star ketone / amine combinations (product name: IRGACURE or DAROCUR etc., manufactured by Ciba-Geigy Corporation) etc. A photopolymerization initiator may be used individually by 1 type, and may be used in combination of 2 or more types in arbitrary ratios.
光聚合起始劑的量,相對於丙烯酸酯系聚合性單體100重量份,以1重量份以上為佳,以2重量份以上為較佳,尤以3重量份以上為佳,且以20重量份以下為佳,以10重量份以下為較佳,尤以5重量份以下為佳。藉由將光聚合起始劑的量設於前述範圍,可使聚合性單體的聚合效率良好地進行,且可避免光聚合起始劑的過度混合,抑制起因於未反應的光聚合起始劑之抗靜電層的黃變或膜物性的變化。The amount of the photopolymerization initiator, relative to 100 parts by weight of the acrylate-based polymerizable monomer, is preferably 1 part by weight or more, preferably 2 parts by weight or more, especially 3 parts by weight or more, and 20 parts by weight or more. It is preferably below 10 parts by weight, especially preferably below 5 parts by weight. By setting the amount of the photopolymerization initiator in the aforementioned range, the polymerization efficiency of the polymerizable monomer can be favorably performed, and excessive mixing of the photopolymerization initiator can be avoided, and the initiation of photopolymerization caused by unreacted can be suppressed. The yellowing of the antistatic layer of the agent or the change of the physical properties of the film.
抗靜電劑得包含溶劑。作為溶劑,以可溶解丙烯酸酯系聚合性單體且得輕易揮發者為佳。作為此種溶劑,可列舉例如:水;甲醇、乙醇、丙醇、丁醇、異丙醇、二丙酮醇、糠醇、四氫糠醇、乙二醇、己二醇、丙二醇等醇類;乙酸甲酯、乙酸乙酯等酯類;二乙基醚、乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丁基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、丙二醇單甲基醚、四氫呋喃等醚類;丙酮、甲基乙基酮、甲基異丁基酮、乙醯丙酮、乙醯乙酸酯、環己酮等酮類;甲賽璐蘇、乙賽璐蘇、丁賽璐蘇等賽璐蘇類;甲苯、二甲苯等芳族化合物;異佛酮等。並且,溶劑可單獨使用1種,亦可以任意比率組合2種以上使用。The antistatic agent must contain a solvent. The solvent is preferably one that can dissolve the acrylate-based polymerizable monomer and can easily volatilize. Examples of such solvents include water; alcohols such as methanol, ethanol, propanol, butanol, isopropanol, diacetone alcohol, furfuryl alcohol, tetrahydrofurfuryl alcohol, ethylene glycol, hexanediol, and propylene glycol; methyl acetate Esters, ethyl acetate and other esters; diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol Alcohol monoethyl ether, propylene glycol monomethyl ether, tetrahydrofuran and other ethers; acetone, methyl ethyl ketone, methyl isobutyl ketone, acetone acetone, acetyl acetate, cyclohexanone and other ketones; Cellulose such as Cellulose, Ethyl Cellulose, Ding Cellulose, etc.; Aromatic compounds such as toluene and xylene; Isophorone, etc. In addition, a solvent may be used individually by 1 type, and may be used in combination of 2 or more types in arbitrary ratios.
前述溶劑之中,以親水性的溶劑為佳。藉由使用親水性的溶劑,在塗布抗靜電劑時,可抑制因吸收空氣中的水分所致之白化。具體而言,以乙醇、甲醇、異丙醇(IPA)的混合溶劑為佳。Among the aforementioned solvents, hydrophilic solvents are preferred. By using a hydrophilic solvent, whitening due to absorption of moisture in the air can be suppressed when the antistatic agent is applied. Specifically, a mixed solvent of ethanol, methanol, and isopropanol (IPA) is preferable.
再者,前述溶劑之中,二丙酮醇、環己酮及乙醯丙酮因塗布後抗靜電劑之膜的表面的平坦性會提升,故為佳。Furthermore, among the aforementioned solvents, diacetone alcohol, cyclohexanone, and acetone acetone are preferable because the surface flatness of the film of the antistatic agent is improved after coating.
並且,在將金屬氧化物粒子以包含水的分散液的狀態準備的情況下,作為抗靜電劑的溶劑,以使用具有水溶性的溶劑為佳。Furthermore, when the metal oxide particles are prepared in the state of a dispersion liquid containing water, it is preferable to use a solvent having water solubility as a solvent of the antistatic agent.
溶劑的量,以抗靜電劑的固體成分濃度收束在預期範圍的方式設定為佳。於此,抗靜電劑的固體成分濃度以10重量%以上為佳,以20重量%以上為較佳,尤以30重量%以上為佳,且以70重量%以下為佳,以55重量%以下為較佳。藉由將抗靜電劑中的固體成分的濃度收束在前述範圍,易於將抗靜電層的厚度收束在適當範圍,而易於製造具有充分抗靜電性能的抗靜電層。再者,通常由於可降低抗靜電層的霧度,故可使抗靜電薄膜的透明性良好。並且,通常可抑制抗靜電層的破裂、基材薄膜的翹曲。再者,由於可降低抗靜電劑的黏度,故可使抗靜電劑的塗布性良好。因此,可提高抗靜電層的表面的平坦性且可抑制條紋不均的產生。The amount of the solvent is preferably set so that the solid content concentration of the antistatic agent is within a desired range. Here, the solid content concentration of the antistatic agent is preferably 10 wt % or more, preferably 20 wt % or more, especially 30 wt % or more, and preferably 70 wt % or less, preferably 55 wt % or less is better. By constricting the concentration of the solid content in the antistatic agent within the aforementioned range, the thickness of the antistatic layer can be easily controlled within an appropriate range, and an antistatic layer having sufficient antistatic performance can be easily produced. Furthermore, since the haze of the antistatic layer can generally be reduced, the transparency of the antistatic film can be improved. In addition, cracking of the antistatic layer and warpage of the base film can generally be suppressed. Furthermore, since the viscosity of the antistatic agent can be lowered, the coatability of the antistatic agent can be improved. Therefore, the flatness of the surface of the antistatic layer can be improved and the occurrence of uneven streaks can be suppressed.
再者,抗靜電劑亦可包含抗靜電層所得含有的任意成分。In addition, the antistatic agent may contain arbitrary components contained in the antistatic layer.
抗靜電劑係藉由以適當的混合裝置混合抗靜電劑所包含之各成分而獲得。作為混合裝置,可列舉例如:均質混合機等。The antistatic agent is obtained by mixing each component contained in the antistatic agent with a suitable mixing device. As a mixing apparatus, a homomixer etc. are mentioned, for example.
在準備抗靜電劑後,以將此抗靜電劑塗布在基材薄膜上,在基材薄膜上形成抗靜電劑之膜為佳。而且,視需求藉由乾燥自抗靜電劑之膜去除溶劑後,以藉由照射紫外線等活性能量線而聚合丙烯酸酯系聚合性單體,使抗靜電劑之膜固化而獲得抗靜電層為佳。After preparing the antistatic agent, it is preferable to coat the antistatic agent on the base film to form a film of the antistatic agent on the base film. Furthermore, after removing the solvent from the film of the antistatic agent by drying as required, it is preferable to polymerize the acrylate-based polymerizable monomer by irradiating active energy rays such as ultraviolet rays to cure the film of the antistatic agent to obtain an antistatic layer. .
作為塗布方法,可列舉例如:棒塗法、狹縫塗布法、旋塗法、輥塗法、簾塗法、網版印刷法等。As a coating method, a bar coating method, a slit coating method, a spin coating method, a roll coating method, a curtain coating method, a screen printing method, etc. are mentioned, for example.
[6.偏光板][6. Polarizing plate]
本發明之抗靜電薄膜,得與偏光件組合作為偏光板使用。The antistatic film of the present invention can be used as a polarizer in combination with a polarizer.
本發明之偏光板具備偏光件與至少設置於該偏光件之單側的抗靜電薄膜。The polarizing plate of the present invention includes a polarizer and an antistatic film disposed on at least one side of the polarizer.
作為偏光件,得使用得使直角相交的兩個的直線偏光之一者穿透,並吸收或反射另一者之薄膜。若要舉出偏光件之具體例,可列舉:對於聚乙烯醇、部分甲醛化聚乙烯醇等乙烯醇系聚合物之薄膜以適當的順序及方式施以透過碘、二色性染料等二色性物質之染色處理、延伸處理、交聯處理等適當處理者。尤其,以包含聚乙烯醇的偏光件為佳。並且,偏光件的厚度通常為5μm~80μm。As a polarizer, a film that allows one of the two linearly polarized lights intersecting at right angles to penetrate and absorb or reflect the other is used. Specific examples of polarizers include applying dichromatic iodine and dichroic dyes to films of vinyl alcohol-based polymers such as polyvinyl alcohol and partially formaldehyde polyvinyl alcohol in an appropriate order and manner. Appropriate treatment such as dyeing treatment, extension treatment, and cross-linking treatment of sexual substances. In particular, a polarizer containing polyvinyl alcohol is preferable. In addition, the thickness of the polarizer is usually 5 μm to 80 μm.
於偏光板中,在抗靜電薄膜的基材薄膜為1/4波長板的情況下,相對於偏光件之穿透軸,抗靜電薄膜之基材薄膜的遲相軸以成為指定角度θ的方式配置為佳。前述角度θ,具體而言,以40°以上為佳,以43°以上為較佳,且以50°以下為佳,以48°以下為較佳,尤以45°±1°之範圍內的角度為佳。藉由如此配置,由於可將穿透液晶晶胞及偏光件且通過抗靜電薄膜而前進的偏光轉換成圓偏光或橢圓偏光,故即使在液晶顯示裝置的使用者穿戴偏光太陽眼鏡的狀態下,亦可使顯示內容能夠辨識。In the polarizer, when the base film of the antistatic film is a 1/4 wavelength plate, with respect to the transmission axis of the polarizer, the retardation axis of the base film of the antistatic film becomes a specified angle θ. Configuration is good. The aforementioned angle θ, specifically, is preferably above 40°, preferably above 43°, preferably below 50°, preferably below 48°, especially within the range of 45°±1° The angle is good. With this configuration, since the polarized light that penetrates the liquid crystal cell and the polarizer and advances through the antistatic film can be converted into circularly polarized light or elliptically polarized light, even when the user of the liquid crystal display device wears polarized sunglasses, It is also possible to make the displayed content identifiable.
偏光板可藉由在偏光件的單側貼合抗靜電薄膜而製造。The polarizer can be manufactured by attaching an antistatic film to one side of the polarizer.
貼合時,亦可視需求使用接合劑。在貼合偏光件與抗靜電薄膜而獲得偏光板的情況下,通常以偏光件、基材薄膜及抗靜電層成為此順序的方式進行貼合。During lamination, adhesive can also be used as required. When a polarizer and an antistatic film are bonded together to obtain a polarizing plate, the polarizer, the base film, and the antistatic layer are usually bonded together in this order.
作為接合劑,可使用任意的接合劑,舉例而言,得使用橡膠系、氟系、丙烯酸系、聚乙烯醇系、聚胺酯系、聚矽氧系、聚酯系、聚醯胺系、聚醚系、環氧系等之接合劑。並且,此等接合劑可單獨使用1種,亦可以任意比率組合2種以上使用。其中,在偏光件與抗靜電薄膜之間,較佳為:設置例如像丙烯酸系接合劑層之紫外線固化型的接合劑層,透過此紫外線固化型的接合劑層將偏光件與抗靜電薄膜貼合。藉此,由於可減小對於偏光件之水分的影響,故可抑制偏光件的劣化。此時,接合劑層的膜厚以0.1μm以上2.0μm以下為佳。As the adhesive, any adhesive can be used, and for example, rubber-based, fluorine-based, acrylic-based, polyvinyl-alcohol-based, polyurethane-based, polysiloxane-based, polyester-based, polyamide-based, and polyether-based can be used. adhesive, epoxy adhesive, etc. In addition, these adhesives may be used individually by 1 type, and may be used in combination of 2 or more types in arbitrary ratios. Among them, between the polarizer and the antistatic film, it is preferable to set an ultraviolet curing adhesive layer such as an acrylic adhesive layer, and attach the polarizer and the antistatic film through the ultraviolet curing adhesive layer. combine. Thereby, since the influence of moisture on the polarizer can be reduced, deterioration of the polarizer can be suppressed. In this case, the film thickness of the adhesive layer is preferably 0.1 μm or more and 2.0 μm or less.
偏光板組合於上述偏光件、抗靜電薄膜,亦可進一步具備任意層。舉例而言,偏光板亦可為了偏光件的保護而具備抗靜電薄膜以外之任意保護薄膜(偏光板保護薄膜)。此種保護薄膜通常設置於與抗靜電薄膜為相反側的偏光件之面。The polarizing plate may be combined with the above-mentioned polarizer and antistatic film, and may further include an arbitrary layer. For example, the polarizer may be provided with any protective film (polarizer protective film) other than the antistatic film for the protection of the polarizer. Such a protective film is usually provided on the surface of the polarizer on the opposite side to the antistatic film.
作為任意保護薄膜,可使用光學上各向同性的各向同性薄膜,亦可使用具有預期延遲的相位差薄膜。在使用相位差薄膜作為任意保護薄膜的情況下,此相位差薄膜可發揮光學補償功能而改善視角依賴性、補償斜視時之偏光件的漏光現象而改善液晶顯示裝置的視角特性。作為此種相位差薄膜,舉例而言,得使用使縱單軸延伸薄膜、橫單軸延伸薄膜、縱橫雙軸延伸薄膜、液晶性化合物聚合而成的相位差薄膜等。作為相位差薄膜之具體例,可列舉:將由包含具有降𦯉烯系聚合物等的脂環結構之聚合物的樹脂等熱塑性樹脂而成之熱塑性樹脂薄膜單軸延伸或雙軸延伸者。並且,作為市售的熱塑性樹脂薄膜,可列舉例如:日本ZEON公司製的「ZeonorFilm」;積水化學工業公司製的「Escena」及「SCA40」;JSR公司製的「ArtonFilm」等。As an arbitrary protective film, an optically isotropic isotropic film can be used, and a retardation film having a desired retardation can also be used. In the case of using a retardation film as any protective film, the retardation film can exert an optical compensation function to improve viewing angle dependence, and compensate for the light leakage phenomenon of the polarizer during squint to improve the viewing angle characteristics of the liquid crystal display device. As such a retardation film, for example, a longitudinally uniaxially stretched film, a laterally uniaxially stretched film, a longitudinally and laterally biaxially stretched film, a retardation film obtained by polymerizing a liquid crystal compound, etc. can be used. Specific examples of the retardation film include uniaxially or biaxially stretched thermoplastic resin films made of thermoplastic resins such as resins containing polymers having an alicyclic structure such as noralkene-based polymers. In addition, examples of commercially available thermoplastic resin films include "ZeonorFilm" manufactured by ZEON Corporation, "Escena" and "SCA40" manufactured by Sekisui Chemical Industry Co., Ltd., and "ArtonFilm" manufactured by JSR Corporation.
[7.觸控面板][7. Touch panel]
本發明之抗靜電薄膜得與觸控面板部件組合而作為觸控面板使用。作為組合之觸控面板部件,得使用任意形式者。The antistatic film of the present invention can be used as a touch panel in combination with a touch panel component. As the combined touch panel components, any form may be used.
所謂觸控面板部件,係設置於顯示裝置,以一邊參照因應需求顯示於顯示裝置的顯示面的影像、一邊透過使用者觸碰指定位置而可進行資料輸入的方式設置的感測器部件。作為觸控面板部件的形式,有:將已圖案化的電極在玻璃或薄膜等基材上設置成與液晶晶胞分離的外掛式、將已圖案化的電極於液晶晶胞內部一體化的內嵌式、將已圖案化之電極於液晶晶胞外部一體化的外嵌式等,得使用此等之任一者。A touch panel component is a sensor component installed on a display device so that data can be input by a user touching a designated position while referring to an image displayed on the display surface of the display device as required. As the form of touch panel components, there are: an external type in which patterned electrodes are provided on a substrate such as glass or film to be separated from the liquid crystal cell, and an internal type in which the patterned electrodes are integrated inside the liquid crystal cell. An in-cell type, an out-cell type in which a patterned electrode is integrated outside a liquid crystal cell, etc., can be used for any of these.
觸控面板得做成包含偏光件者。The touch panel must be made to include polarizers.
並且,得將包含本發明之抗靜電薄膜與偏光件的偏光板與觸控面板部件組合,做成包含偏光板的觸控面板。In addition, a polarizing plate including the antistatic film of the present invention and a polarizer and a touch panel member may be combined to form a touch panel including a polarizing plate.
[8.液晶顯示裝置][8. Liquid crystal display device]
本發明之抗靜電薄膜得使用於液晶顯示裝置。The antistatic film of the present invention can be used in a liquid crystal display device.
本發明之抗靜電薄膜以設置於具備觸控面板部件的影像顯示裝置為佳。並且,液晶顯示裝置以做成具備有包含本發明之抗靜電薄膜的觸控面板者為佳。具備搭載了本發明之抗靜電薄膜的觸控面板的液晶顯示裝置,通常具備液晶晶胞、設置於液晶晶胞之觀看側的偏光件與設置於偏光件之觀看側的抗靜電薄膜,並更具備觸控面板部件。此時,作為搭載觸控面板部件的位置,依其液晶顯示裝置之構成而各式各樣,自觀看側(使用者觀看影像之側)可列舉(1)觸控面板部件/抗靜電薄膜/偏光件/液晶晶胞、(2)抗靜電薄膜/觸控面板部件/偏光件/液晶晶胞、(3)抗靜電薄膜/偏光件/觸控面板部件/液晶晶胞、(4)抗靜電薄膜/偏光件/附有外嵌式觸控面板部件之液晶晶胞、(5)抗靜電薄膜/偏光件/附有內嵌式觸控面板部件之液晶晶胞等構成。於上述構成中,抗靜電薄膜可以偏光件、觸控面板部件或與液晶晶胞預先一體化的狀態使用,亦可以使用黏著劑將抗靜電薄膜後附於具備觸控面板部件的液晶顯示裝置的型態使用。其中,尤其(5)抗靜電薄膜/偏光件/附有內嵌式觸控面板部件之液晶晶胞的構成,易於受到透過觸控面板之帶電所致之液晶晶胞的顯示品質降低的影響,而係最能發揮本發明之抗靜電薄膜的功能之構成。因此,包含本發明之抗靜電薄膜的液晶顯示裝置,以做成上述(5)之構成為佳。The antistatic film of the present invention is preferably installed in an image display device having a touch panel member. In addition, it is preferable that the liquid crystal display device is provided with a touch panel including the antistatic film of the present invention. A liquid crystal display device equipped with a touch panel equipped with the antistatic film of the present invention generally includes a liquid crystal cell, a polarizer disposed on the viewing side of the liquid crystal cell, and an antistatic film disposed on the viewing side of the polarizer, and more Equipped with touch panel parts. At this time, the position where the touch panel member is mounted varies depending on the configuration of the liquid crystal display device. From the viewing side (the side where the user views the image), (1) touch panel member / antistatic film / Polarizer/Liquid Crystal Cell, (2) Antistatic Film/Touch Panel Parts/Polarizer/Liquid Crystal Cell, (3) Antistatic Film/Polarizer/Touch Panel Parts/Liquid Crystal Cell, (4) Antistatic Film/polarizer/liquid crystal cell with in-cell touch panel components, (5) antistatic film/polarizer/liquid crystal cell with in-cell touch panel components, etc. In the above configuration, the antistatic film can be used in a state of a polarizer, a touch panel component or pre-integrated with a liquid crystal cell, or an adhesive can be used to attach the antistatic film to the surface of a liquid crystal display device with a touch panel component. Type use. Among them, especially (5) the composition of the antistatic film/polarizer/liquid crystal cell with in-cell touch panel components is easily affected by the degradation of the display quality of the liquid crystal cell caused by the charging through the touch panel, And it is the structure which can best exert the function of the antistatic film of the present invention. Therefore, the liquid crystal display device including the antistatic film of the present invention preferably has the configuration of (5) above.
本發明之抗靜電薄膜由於耐光性優異,故前述液晶顯示裝置可使液晶晶胞的液晶分子的驅動控制穩定化。並且,尤其在抗靜電薄膜之基材薄膜為由包含含有脂環結構的聚合物的熱塑性樹脂而成的情況下,可使耐熱性及耐濕性良好,再者,由於在貼合時不需使用水系的接合劑,故可抑制在高溫高濕下之耐久試驗的品質降低。再者,在抗靜電薄膜之基材薄膜包含紫外線吸收劑的情況下,可自製造液晶顯示裝置時曝曬的紫外線及使用液晶顯示裝置時曝曬之外光中的紫外線保護液晶晶胞及偏光件等構成部件。Since the antistatic film of the present invention is excellent in light resistance, the liquid crystal display device can stabilize the driving control of the liquid crystal molecules of the liquid crystal cell. In addition, especially when the base film of the antistatic film is made of a thermoplastic resin containing a polymer containing an alicyclic structure, heat resistance and moisture resistance can be improved. A water-based adhesive is used, so it is possible to suppress the deterioration of the quality of the durability test under high temperature and high humidity. Furthermore, in the case where the base film of the antistatic film contains an ultraviolet absorber, the liquid crystal cells and polarizers can be protected from ultraviolet rays exposed to sunlight during the manufacture of the liquid crystal display device and ultraviolet rays exposed to external light when the liquid crystal display device is used. constituent parts.
作為液晶顯示裝置,得使用TN式、VA式、IPS式等之任意者。其中,IPS式的液晶顯示裝置由於在視角改變的情況下液晶顯示之顯示色不會改變,故為佳。並且,在將液晶顯示裝置作為觸控面板感測器使用的情況下,為了降低液晶顯示裝置整體的厚度,亦可使用內嵌型的液晶晶胞。As the liquid crystal display device, any of a TN type, a VA type, and an IPS type can be used. Among them, the IPS type liquid crystal display device is preferable because the display color of the liquid crystal display does not change when the viewing angle changes. In addition, when the liquid crystal display device is used as a touch panel sensor, in order to reduce the thickness of the entire liquid crystal display device, an in-cell type liquid crystal cell may be used.
於液晶顯示裝置中,液晶晶胞與抗靜電薄膜的抗靜電層以導通為佳。藉此,由於可將儲存於液晶晶胞的電荷逸散至抗靜電層而抑制液晶晶胞的帶電,故可有效使液晶晶胞的液晶分子的驅動控制穩定化。In the liquid crystal display device, the liquid crystal cell and the antistatic layer of the antistatic film are preferably connected to each other. Thereby, since the electric charge stored in the liquid crystal cell can be dissipated to the antistatic layer and the charging of the liquid crystal cell can be suppressed, the driving control of the liquid crystal molecules of the liquid crystal cell can be effectively stabilized.
於液晶顯示裝置中,抗靜電薄膜通常設置成基材薄膜比抗靜電層更靠近液晶晶胞的位向。In a liquid crystal display device, the antistatic film is usually arranged such that the substrate film is closer to the orientation of the liquid crystal cell than the antistatic layer.
如液晶晶胞、觸控面板部件、偏光板保護薄膜、偏光件及抗靜電薄膜之液晶顯示裝置的構成部件,亦可貼合而一體化。舉例而言,亦可貼合偏光板保護薄膜、偏光件及抗靜電薄膜做成單一的偏光板。並且,亦可貼合此偏光板與液晶晶胞,將偏光板固定於液晶晶胞。在此種情況下,前述構成部件可透過適當的接合劑層而貼合,亦可透過部件表面之電漿處理等方法直接貼合。The components of the liquid crystal display device, such as liquid crystal cells, touch panel components, polarizer protective films, polarizers and antistatic films, can also be laminated and integrated. For example, a polarizer protective film, a polarizer and an antistatic film can also be laminated together to form a single polarizer. In addition, the polarizing plate and the liquid crystal cell may be bonded together, and the polarizing plate may be fixed to the liquid crystal cell. In this case, the aforementioned constituent members may be bonded through an appropriate adhesive layer, or may be directly bonded by methods such as plasma treatment on the surface of the member.
作為前述接合劑層所使用之接合劑,可使用上述任意接合劑。As the adhesive used for the above-mentioned adhesive layer, any of the above-mentioned adhesives can be used.
『實施例』"Example"
以下揭示實施例以具體說明本發明。惟本發明並非限定於以下所揭示之實施例者,在不脫離本發明之申請專利範圍及其均等範圍的範圍中,得任意變更而實施。於以下之說明中,除非另有註明,否則表示份量之「%」及「份」以重量為基準。並且,除非另有註明,否則於以下說明之操作係在常溫及常壓的條件下進行。The following examples are disclosed to specifically illustrate the present invention. However, the present invention is not limited to the embodiments disclosed below, and can be implemented with arbitrary changes without departing from the scope of the patent application of the present invention and the scope of its equivalents. In the following descriptions, unless otherwise specified, "%" and "parts" indicating parts are based on weight. And, unless otherwise noted, the operations described below are carried out under the conditions of normal temperature and normal pressure.
[評價方法][Evaluation method]
(金屬氧化物粒子之平均連結數的量測方法)(Measuring method of average number of linkages of metal oxide particles)
藉由穿透型電子顯微鏡拍攝金屬氧化物粒子之鏈狀連結體的照片。自此照片,針對金屬氧化物粒子的鏈狀連結體100個,求出各個鏈狀連結體中的連結數,計算其平均值,將小數點後第1位四捨五入,求得金屬氧化物粒子的平均連結數。Photographs of chain-like linkages of metal oxide particles were taken with a transmission electron microscope. From this photograph, with respect to 100 chain links of metal oxide particles, the number of links in each chain link body was obtained, the average value was calculated, and the number of metal oxide particles was rounded off to the first decimal place to obtain the Average number of links.
(基材薄膜之厚度的量測方法)(Measurement method of thickness of substrate film)
基材薄膜之厚度係以接觸式膜厚計(三豐公司製「Dial gauge」)量測。The thickness of the base film was measured with a contact thickness gauge (“Dial gauge” manufactured by Mitutoyo Corporation).
(基材薄膜之量測波長380nm的光線穿透率的量測方法)(Measuring method of light transmittance at the measurement wavelength of 380nm for the base film)
基材薄膜之量測波長380nm的光線穿透率係以分光光度計(日本分光公司製「V-7200」)量測。The light transmittance at the measurement wavelength of 380 nm of the base film was measured with a spectrophotometer (“V-7200” manufactured by JASCO Corporation).
(抗靜電層之殘留雙鍵率的量測方法)(Measurement method of residual double bond ratio of antistatic layer)
抗靜電層的殘留雙鍵率係以如同下述之方法算出。The residual double bond ratio of the antistatic layer was calculated as follows.
藉由ATR法量測抗靜電層的紅外線吸收光譜。The infrared absorption spectrum of the antistatic layer was measured by ATR method.
具體而言,藉由ATR量測裝置(機種名「Spectrum Spotlight 300」,Perkinelmer製),在使用ZeSe作為稜鏡反射1次的條件下,量測暴露於抗靜電薄膜之表面的抗靜電層的紅外線吸收光譜。自作為AC - H 出現於810cm−1 附近之峰值的面積(a1)及作為AC = O 出現於1720cm−1 附近之峰值的面積(a2)算出a1/a2作為AC - H /AC = O 的值。Specifically, with an ATR measuring device (model name "Spectrum Spotlight 300", manufactured by Perkinelmer), under the condition of one reflection using ZeSe as a fluoride, the amount of the antistatic layer exposed on the surface of the antistatic film was measured. Infrared absorption spectroscopy. Since as A C - peak appears in the vicinity of the area of the 810cm -1 H (a1) and as A C = O peak appears in the vicinity of the area of 1720cm -1 (a2) calculating a1 / a2 as A C - H / A C = the value of O.
算出抗靜電劑中的丙烯酸酯系聚合性單體之相對於丙烯酸酯系聚合性單體及金屬氧化物粒子的重量比率,亦即,(丙烯酸酯系聚合性單體之摻合重量)/((丙烯酸酯系聚合性單體之摻合重量)+(金屬氧化物粒子之摻合重量))的值,作為Wa/(Wa+Wm)的值。Calculate the weight ratio of the acrylate-based polymerizable monomer in the antistatic agent to the acrylate-based polymerizable monomer and the metal oxide particles, that is, (the blending weight of the acrylate-based polymerizable monomer)/( The value of (the blending weight of the acrylate-based polymerizable monomer) + (the blending weight of the metal oxide particles)) was taken as the value of Wa/(Wa+Wm).
算出AC - H /AC = O ×Wa/(Wa+Wm)×100,作為抗靜電層的殘留雙鍵率Dre的值。A C - H /A C = O ×Wa/(Wa+Wm)×100 was calculated as the value of the residual double bond ratio Dre of the antistatic layer.
(抗靜電層之表面電阻值的量測方法)(Measuring method of surface resistance value of antistatic layer)
將進行後述耐光性試驗前之抗靜電薄膜切出10cm×10cm的正方形,獲得試料薄膜。以接觸此試料薄膜的基材薄膜側之面的方式配置氟樹脂板,使用電阻率計(Mitsubishi Chemical Analytech Co., Ltd.製「HIRESTA-UX MCP-HT800」,裝配探針URS)以500V、10秒鐘的條件量測抗靜電層側的表面電阻率。表面電阻值愈小,抗靜電性愈優異。The antistatic film before the light resistance test described later was cut out into a square of 10 cm×10 cm to obtain a sample film. A fluororesin plate was placed so as to be in contact with the base film side of the sample film, and a resistivity meter ("HIRESTA-UX MCP-HT800" manufactured by Mitsubishi Chemical Analytech Co., Ltd., with probe URS) was used at 500 V, The surface resistivity of the antistatic layer side was measured under the condition of 10 seconds. The smaller the surface resistance value, the better the antistatic property.
(初始電阻值的量測方法)(Measurement method of initial resistance value)
剪裁抗靜電薄膜(導電性硬塗保護膜),獲得45mm×50mm的矩形樣品。矩形樣品之邊的方向設為長條狀的基材薄膜的長邊方向及與寬幅方向平行的方向,長邊方向設為50mm,寬幅方向設為45mm。Cut the antistatic film (conductive hard coat protective film) to obtain a rectangular sample of 45mm × 50mm. The direction of the side of the rectangular sample was set to be the longitudinal direction of the elongated base film and the direction parallel to the width direction, the longitudinal direction was set to 50 mm, and the width direction was set to 45 mm.
在抗靜電薄膜的基材薄膜側上,以完全包覆抗靜電薄膜的方式依序貼合裁成45mm×50mm的黏合片(CS9621T:日東電工公司製,厚度20μm)、偏光薄膜(SANRITZ公司製「HCL2-5618S」)、黏合片(CS9621T:日東電工公司製,厚度20μm)、玻璃(厚度0.7mm)。另一方面,在抗靜電層上使用黏合片(CS9621T:日東電工公司製,厚度20μm)貼合45mm×45mm的藍色平板玻璃(厚度0.7mm)。此時,以抗靜電層之長邊方向的兩端部各多出2.5mm的方式貼合。藉此,獲得具有(藍色平板玻璃)/(黏合片)/(抗靜電層)/(基材薄膜)/(黏合片)/(偏光薄膜)/(黏合片)/(藍色平板玻璃)的層構成,並在端部具有暴露抗靜電層之結構的堆疊體。On the base film side of the antistatic film, a 45mm x 50mm adhesive sheet (CS9621T: manufactured by Nitto Denko Co., Ltd., thickness 20 μm), a polarizing film (manufactured by SANRITZ Corporation), "HCL2-5618S"), adhesive sheet (CS9621T: manufactured by Nitto Denko Co., Ltd., thickness 20 μm), glass (thickness 0.7 mm). On the other hand, blue flat glass (thickness 0.7mm) of 45mm×45mm was bonded to the antistatic layer using an adhesive sheet (CS9621T: manufactured by Nitto Denko Corporation, thickness 20 μm). At this time, the both ends of the longitudinal direction of the antistatic layer were bonded together so that each of them had an excess of 2.5 mm. In this way, a material having (blue flat glass)/(adhesive sheet)/(antistatic layer)/(substrate film)/(adhesive sheet)/(polarizing film)/(adhesive sheet)/(blue flat glass) is obtained. A stack of layers with exposed antistatic layers at the ends.
在所獲得之堆疊體的抗靜電層暴露的部分塗布銀膏,在室溫下乾燥24小時,製作試片。A silver paste was applied to a portion where the antistatic layer of the obtained stack was exposed, and it was dried at room temperature for 24 hours to prepare a test piece.
將試驗器中介鱷魚夾分別連接至試片兩端的導電膠帶,以電壓250V的條件開始電阻值的量測。將自量測開始經過30秒鐘之時間點的量測值設為初始電阻值R0。Connect the alligator clips in the tester to the conductive tape at both ends of the test piece, and start the measurement of the resistance value under the condition of a voltage of 250V. The measurement value at a time point of 30 seconds from the start of the measurement was set as the initial resistance value R0.
(耐光性試驗)(Light fastness test)
初始電阻值的量測後,對試片的藍色平板玻璃側之面照射紫外線。照射係使用紫外線自動褪色測試儀(U48AUB:Suga試驗機公司製)以500W/m2 、黑板溫度63℃的條件進行。將在照射開始後經過96小時的時間點、經過192小時的時間點、經過288小時的時間點之電阻值之中最大的值設為最大電阻值R1,求取R1/R0的值作為電阻值變化率。根據此值評價耐光性。電阻值變化率愈小,耐光性愈優異。After the measurement of the initial resistance value, ultraviolet rays were irradiated on the blue plate glass side surface of the test piece. Irradiation was performed using an automatic ultraviolet fading tester (U48AUB: manufactured by Suga Testing Machine Co., Ltd.) under the conditions of 500 W/m 2 and a black panel temperature of 63°C. The largest resistance value among the resistance values at the time of 96 hours, the time of 192 hours, and the time of 288 hours after the start of irradiation was set as the maximum resistance value R1, and the value of R1/R0 was obtained as the resistance value rate of change. Light fastness was evaluated based on this value. The smaller the resistance value change rate, the better the light resistance.
(抗靜電薄膜之霧度值的量測方法)(Measurement method of haze value of antistatic film)
抗靜電薄膜之霧度值,係遵循JIS K7136使用霧度計(東洋精機公司製「HAZE-GARD II」)量測。The haze value of the antistatic film was measured using a haze meter (“HAZE-GARD II” manufactured by Toyo Seiki Co., Ltd.) in accordance with JIS K7136.
(抗靜電薄膜之全光線穿透率的量測方法)(Measuring method of total light transmittance of antistatic film)
抗靜電薄膜之全光線穿透率,係遵循JIS K7361-1使用霧度計(東洋精機公司製「HAZE-GARD II」)量測。The total light transmittance of the antistatic film was measured using a haze meter (“HAZE-GARD II” manufactured by Toyo Seiki Co., Ltd.) in accordance with JIS K7361-1.
(抗靜電層之厚度的量測方法)(Measurement method of thickness of antistatic layer)
抗靜電層之厚度係以干涉式膜厚計(Filmetrics公司製「F20膜厚量測系統」)量測。The thickness of the antistatic layer was measured with an interferometric film thickness meter (“F20 film thickness measurement system” manufactured by Filmetrics).
(基材薄膜及抗靜電層的折射率的量測方法)(Measuring method of refractive index of base film and antistatic layer)
基材薄膜及抗靜電層的折射率,係以折射率膜厚量測裝置(Metricon公司製「稜鏡耦合器」)在波長407nm、波長532nm、及波長633nm之3波長量測。在基材薄膜為延伸薄膜的情況下,自延伸方向的折射率(ns)、垂直於延伸方向之面內方向的折射率(nf)、厚度方向的折射率(nz),以(ns+nf+nz)/3之式計算基材薄膜的平均折射率,將此平均折射率採用作為該基材薄膜之折射率的量測值。並且,在基材薄膜為單軸延伸薄膜的情況下,厚度方向的折射率(nz)係近似為與垂直於延伸方向之面內方向的折射率(nf)相等而計算。抗靜電層由於未配向且折射率在任何方向皆一致,故將長邊方向的折射率採用作為該抗靜電層之折射率的量測值。將此所量測之值作為基準進行柯西擬合,算出在波長550nm之基材薄膜及抗靜電層分別的折射率。The refractive indices of the base film and the antistatic layer were measured at three wavelengths of 407 nm, 532 nm, and 633 nm with a refractive index film thickness measuring device ("Hydronium Coupler" manufactured by Metricon). When the base film is a stretched film, the refractive index from the stretching direction (ns), the refractive index in the in-plane direction perpendicular to the stretching direction (nf), and the refractive index in the thickness direction (nz) are expressed as (ns+nf+nz)/
[製造例1:金屬氧化物粒子的製造][Production Example 1: Production of Metal Oxide Particles]
製備將錫酸鉀130g與酒石酸銻鉀30g溶解於純水400g的混合溶液。A mixed solution in which 130 g of potassium stannate and 30 g of potassium antimony tartrate were dissolved in 400 g of pure water was prepared.
準備使硝酸胺1.0g與15%氨水12g溶解於純水1000g的水溶液。一邊將此水溶液在60℃下攪拌,一邊耗費12小時添加前述混合溶液至此水溶液,進行水解。並且,此時以將前述水溶液保持在pH 9.0的方式,同時將10%硝酸溶液添加至前述水溶液。藉由水解,在水溶液中生成沉澱物。An aqueous solution prepared by dissolving 1.0 g of amine nitrate and 12 g of 15% ammonia water in 1000 g of pure water was prepared. While stirring this aqueous solution at 60°C, the aforementioned mixed solution was added to this aqueous solution over 12 hours to perform hydrolysis. In addition, at this time, a 10% nitric acid solution was added to the aforementioned aqueous solution so as to maintain the aforementioned aqueous solution at pH 9.0. By hydrolysis, a precipitate is formed in the aqueous solution.
過濾清洗生成的沉澱物後,再次使其分散於水中,製備固體成分濃度20重量%之摻銻氧化錫前驅物的氫氧化物的分散液。在溫度100℃下噴霧乾燥此分散液,獲得粉末。藉由將所獲得之粉體在空氣環境、550℃下加熱處理2小時,獲得摻銻氧化錫的粉末。After filtering and washing the generated precipitate, it was dispersed in water again to prepare a dispersion liquid of the hydroxide of the antimony-doped tin oxide precursor with a solid content concentration of 20% by weight. This dispersion was spray-dried at a temperature of 100°C to obtain a powder. Antimony-doped tin oxide powder was obtained by heat-treating the obtained powder at 550° C. for 2 hours in an air environment.
將此粉末60份分散於濃度4.3重量%的氫氧化鉀水溶液140份,獲得水分散液。將此水分散液一邊保持在30℃一邊以砂磨機粉碎3小時以製備溶膠。其次,以離子交換樹脂對此溶膠進行去鹼離子處理直到pH成為3.0為止。接下來,於此溶膠加入純水,製備以固體成分濃度20重量%包含摻銻氧化錫之粒子的粒子分散液。此粒子分散液的pH為3.3。並且粒子的平均粒徑為9nm。60 parts of this powder were dispersed in 140 parts of potassium hydroxide aqueous solution having a concentration of 4.3% by weight to obtain an aqueous dispersion. This aqueous dispersion was pulverized with a sand mill for 3 hours while maintaining at 30°C to prepare a sol. Next, this sol was subjected to debasic treatment with an ion exchange resin until the pH became 3.0. Next, pure water was added to this sol to prepare a particle dispersion liquid containing antimony-doped tin oxide particles at a solid content concentration of 20% by weight. The pH of this particle dispersion was 3.3. And the average particle diameter of the particle|grains was 9 nm.
接下來,將前述粒子分散液100g調整至25℃,以3分鐘添加四乙氧基矽烷(多摩化學製:正矽酸乙酯,SiO2 濃度28.8%)4.0g後,進行30分鐘攪拌。之後,於此花費1分鐘添加乙醇100g,以30分鐘升溫至50℃,進行15小時加熱處理。加熱處理後的分散液的固體成分濃度為10%。Next, 100 g of the particle dispersion liquid was adjusted to 25° C., 4.0 g of tetraethoxysilane (manufactured by Tama Chemical Co., Ltd.: ethyl orthosilicate, SiO 2 concentration 28.8%) was added over 3 minutes, and the mixture was stirred for 30 minutes. Thereafter, 100 g of ethanol was added over 1 minute, the temperature was raised to 50° C. over 30 minutes, and a heat treatment was performed for 15 hours. The solid content concentration of the dispersion liquid after the heat treatment was 10%.
接下來,以超過濾透膜將分散介質的水及乙醇取代為乙醇。藉此,獲得以固體成分濃度20%包含被覆矽石的摻銻氧化錫之粒子作為金屬氧化物粒子(P1)的分散液。前述金屬氧化物粒子(P1)藉由多數凝集而連結成鏈狀。此時,金屬氧化物粒子(P1)的平均連結數為5個。Next, the water and ethanol in the dispersion medium were replaced with ethanol by an ultrafiltration membrane. Thereby, the dispersion liquid containing the particle|grains of the antimony-doped tin oxide coated with silica as the metal oxide particle (P1) was obtained at a solid content concentration of 20%. The above-mentioned metal oxide particles (P1) are connected in a chain shape by agglomeration of many. At this time, the average number of connections of the metal oxide particles ( P1 ) was five.
[製造例2-1:抗靜電劑(A1)的製造][Production Example 2-1: Production of Antistatic Agent (A1)]
準備包含係為丙烯酸酯系聚合性單體之六丙烯酸二新戊四醇酯(以下有時省略為「DP6A」。)、五丙烯酸二新戊四醇酯(以下有時省略為「DP5A」。)及四丙烯酸二新戊四醇酯(以下有時省略為「DP4A」。)之紫外線固化型之聚合性單體的組成物(R1)。於此聚合性單體的組成物(R1)中,各成分的重量比為DP6A/DP5A/DP4A=64/17/19。並且,聚合性單體的組成物(R1)的固體成分的濃度為100%。The acrylic polymerizable monomers were prepared containing dipivalerythritol hexaacrylate (hereinafter, sometimes abbreviated as "DP6A") and pentaerythritol pentaacrylate (hereinafter, sometimes abbreviated as "DP5A". ) and the composition (R1) of a UV-curable polymerizable monomer of dipivaloerythritol tetraacrylate (hereinafter, it may be abbreviated as "DP4A".) In the composition (R1) of this polymerizable monomer, the weight ratio of each component is DP6A/DP5A/DP4A=64/17/19. In addition, the solid content concentration of the polymerizable monomer composition (R1) was 100%.
準備二異氰酸異佛酮酯222重量份與三丙烯酸新戊四醇酯(以下有時省略為「PE3A」。)及四丙烯酸新戊四醇酯(以下有時省略為「PE4A」。)的混合物(PE3A/PE4A=75/25(重量比))795重量份之係為胺甲酸酯反應丙烯酸酯的多官能丙烯酸胺甲酸酯(U1)。此多官能丙烯酸胺甲酸酯(U1)為丙烯酸酯系聚合性單體。此多官能丙烯酸胺甲酸酯(U1)的固體成分的濃度為100%。Prepare 222 parts by weight of isophorone diisocyanate, neotaerythritol triacrylate (hereinafter, it may be abbreviated as "PE3A".) and neopentaerythritol tetraacrylate (hereinafter, it may be abbreviated as "PE4A".) The mixture (PE3A/PE4A=75/25 (weight ratio)) of 795 parts by weight is a polyfunctional acrylic urethane (U1) of urethane-reactive acrylate. This polyfunctional urethane acrylate (U1) is an acrylate-based polymerizable monomer. The solid content concentration of this polyfunctional urethane acrylate (U1) was 100%.
準備乙醇、正丙醇、甲醇及水的混合物的混合乙醇。於此混合乙醇中,各成分的重量比為乙醇/正丙醇/甲醇/水=85.5/9.6/4.9/0.2。A mixed ethanol of a mixture of ethanol, n-propanol, methanol, and water was prepared. In this mixed ethanol, the weight ratio of each component was ethanol/n-propanol/methanol/water=85.5/9.6/4.9/0.2.
將前述聚合性單體的組成物(R1)13.7重量份、前述多官能丙烯酸胺甲酸酯(U1)1.5重量份、甲基乙基酮7.3重量份、前述混合乙醇7.3重量份、乙醯丙酮7.3重量份及光聚合起始劑(BASF日本股份有限公司製「IRGACURE 184」,固體成分100%)0.86重量份充分混合,獲得混合液。於此混合液加入在製造例1中製造的金屬氧化物粒子(P1)(固體成分20%)的分散液21.7重量份及丙烯酸系界面活性劑(固體成分100%)0.24重量份,混合均勻,獲得具有活性能量線固化性的液狀組成物作為抗靜電劑(A1)。抗靜電劑(A1)之丙烯酸酯系聚合性單體(聚合性單體的組成物(R1)及多官能丙烯酸胺甲酸酯(U1))之相對於丙烯酸酯系聚合性單體及金屬氧化物粒子(P1)的重量比率為0.78。並且,金屬氧化物粒子之相對於丙烯酸酯系聚合性單體的重量比率為0.28(28重量%)。13.7 parts by weight of the polymerizable monomer composition (R1), 1.5 parts by weight of the polyfunctional urethane acrylate (U1), 7.3 parts by weight of methyl ethyl ketone, 7.3 parts by weight of the mixed ethanol, and acetone acetone 7.3 parts by weight and 0.86 parts by weight of a photopolymerization initiator (“IRGACURE 184” manufactured by BASF Japan Co., Ltd.,
[製造例2-2:抗靜電劑(A2)的製造][Production Example 2-2: Production of Antistatic Agent (A2)]
將比照製造例2-1操作而製備的聚合性單體的組成物(R1)10.3重量份、比照製造例2-1操作而製備的多官能丙烯酸胺甲酸酯(U1)1.1重量份、甲基乙基酮7.3重量份、比照製造例2-1操作而製備的混合乙醇7.3重量份、乙醯丙酮7.3重量份及光聚合起始劑(BASF日本股份有限公司製「IRGACURE 184」,固體成分100%)0.86重量份充分混合,獲得混合液。於此混合液加入在製造例1中製造的金屬氧化物粒子(P1)(固體成分20%)的分散液41.1重量份及丙烯酸系界面活性劑(固體成分100%)0.24重量份,混合均勻,獲得具有活性能量線固化性的液狀組成物作為抗靜電劑(A2)。抗靜電劑(A2)之丙烯酸酯系聚合性單體(聚合性單體的組成物(R1)及多官能丙烯酸胺甲酸酯(U1))之相對於丙烯酸酯系聚合性單體及金屬氧化物粒子(P1)的重量比率為0.58。並且,金屬氧化物粒子之相對於丙烯酸酯系聚合性單體的重量比率為0.72(72重量%)。10.3 parts by weight of the polymerizable monomer composition (R1) prepared in accordance with Production Example 2-1, 1.1 parts by weight of polyfunctional acrylate urethane (U1) prepared in accordance with Production Example 2-1, methyl methacrylate 7.3 parts by weight of methyl ethyl ketone, 7.3 parts by weight of mixed ethanol, 7.3 parts by weight of acetylacetone and photopolymerization initiator (“IRGACURE 184” manufactured by BASF Japan Co., Ltd.,
[實施例1][Example 1]
(1-1.基材薄膜的製造)(1-1. Manufacture of base film)
藉由雙軸擠製機混合已乾燥之包含具有脂環結構之聚合物的熱塑性樹脂(COP1)(日本ZEON公司製,玻璃轉移溫度123℃)100份及苯并三唑系之紫外線吸收劑(ADEKA公司製「LA-31」)5.5份。接下來,將此混合物投入至連接擠製機的進料斗,供給至單軸擠製機熔融擠製,獲得包含紫外線吸收劑的熱塑性樹脂(J1)。此熱塑性樹脂(J1)中之紫外線吸收劑的量為5.2重量%。100 parts of a dried thermoplastic resin (COP1) containing a polymer having an alicyclic structure (manufactured by ZEON Co., Ltd., glass transition temperature: 123°C) and a benzotriazole-based ultraviolet absorber ( ADEKA Corporation "LA-31") 5.5 copies. Next, this mixture was injected|thrown-in to the hopper connected to an extruder, and it supplied to a uniaxial extruder and melt-extruded, and obtained the thermoplastic resin (J1) containing an ultraviolet absorber. The amount of the ultraviolet absorber in this thermoplastic resin (J1) was 5.2% by weight.
準備具備篩孔尺寸3μm之葉圓盤形狀的聚合物過濾器之雙螺紋型的螺桿徑50mm單軸擠製機(螺桿有效長度L與螺桿徑D之比L/D=32)。將前述熱塑性樹脂(J1)投入至裝填於此單軸擠製機的進料斗。然後,使此熱塑性樹脂(J1)熔融,以擠製機的出口溫度280℃、擠製機的齒輪泵的旋轉數10rpm將已熔融之熱塑性樹脂(J1)供給至多歧管模具。此多歧管模具之模隙的算術表面粗糙度Ra為0.1μm。A double-screw type uniaxial extruder with a screw diameter of 50 mm equipped with a leaf disk-shaped polymer filter with a mesh size of 3 μm (ratio of screw effective length L to screw diameter D L/D=32) was prepared. The aforementioned thermoplastic resin (J1) was put into the feed hopper charged in this uniaxial extruder. Then, this thermoplastic resin (J1) was melted, and the melted thermoplastic resin (J1) was supplied to the multi-manifold die at an outlet temperature of 280° C. of the extruder and a rotation speed of the gear pump of the extruder at 10 rpm. The arithmetic surface roughness Ra of the mold gap of this manifold mold was 0.1 μm.
另一方面,準備與已投入有熱塑性樹脂(J1)的單軸擠製機不同之具備篩孔尺寸3μm之葉圓盤形狀的聚合物過濾器之螺桿徑50mm的單軸擠製機(L/D=32)。將與熱塑性樹脂(J1)的製造所使用者相同的包含具有脂環結構之聚合物的熱塑性樹脂(COP1)投入至裝填於此單軸擠製機的進料斗。然後,使此熱塑性樹脂(COP1)熔融,以擠製機的出口溫度285℃、擠製機的齒輪泵的旋轉數4rpm將已熔融之熱塑性樹脂(COP1)供給至前述多歧管模具。On the other hand, a uniaxial extruder (L/ D = 32). The thermoplastic resin (COP1) containing a polymer having an alicyclic structure, which is the same as that used by the manufacturer of the thermoplastic resin (J1), was put into the feed hopper charged in the uniaxial extruder. Then, this thermoplastic resin (COP1) was melted, and the melted thermoplastic resin (COP1) was supplied to the multi-manifold die at an outlet temperature of 285° C. of the extruder and a rotation number of a gear pump of the extruder at 4 rpm.
以280℃使熔融狀態的熱塑性樹脂(COP1)、包含紫外線吸收劑之熔融狀態的熱塑性樹脂(J1)及熔融狀態的熱塑性樹脂(COP1)分別自多歧管模具吐出,澆鑄至已溫度調整為150℃的冷卻輥,獲得延伸前薄膜。樹脂吐出時,空氣隙量設定為50mm。並且,採用邊緣釘扎(edge pinning)作為將吐出之樹脂澆鑄至冷卻輥的方法。The molten thermoplastic resin (COP1), the molten thermoplastic resin containing the ultraviolet absorber (J1), and the molten thermoplastic resin (COP1) were discharged from the manifold mold at 280°C, respectively, and cast until the temperature was adjusted to 150°C. °C cooling roll to obtain the film before stretching. When the resin was discharged, the amount of air gap was set to 50 mm. In addition, edge pinning is employed as a method of casting the discharged resin on the cooling roll.
所獲得之延伸前薄膜係依序具備:由熱塑性樹脂(COP1)而成之厚度15μm的樹脂層、由包含紫外線吸收劑的熱塑性樹脂(J1)而成之厚度40μm的樹脂層及由熱塑性樹脂(COP1)而成之厚度15μm的樹脂層之3層結構的多層薄膜。並且,延伸前薄膜的寬度為1400mm,總厚度為70μm。對於藉此獲得之延伸前薄膜施以將該延伸前薄膜的寬幅方向的兩端部分別切除50mm的修邊處理,將寬度做成1300mm。The obtained pre-stretching film was sequentially provided with: a resin layer made of a thermoplastic resin (COP1) with a thickness of 15 μm, a resin layer made of a thermoplastic resin containing an ultraviolet absorber (J1) with a thickness of 40 μm, and a thermoplastic resin ( COP1) is a multilayer film with a three-layer structure of resin layers with a thickness of 15 μm. In addition, the width of the film before stretching was 1400 mm, and the total thickness was 70 μm. The pre-stretching film thus obtained was subjected to a trimming process in which both end portions in the width direction of the pre-stretching film were each cut by 50 mm, and the width was set to 1300 mm.
對於前述延伸前薄膜,以延伸溫度140℃、延伸速度20m/min的條件,沿相對於延伸前薄膜的長邊方向既不平行亦不垂直的傾斜方向延伸,獲得延伸薄膜作為基材薄膜。所獲得之延伸薄膜係依序具備:由熱塑性樹脂(COP1)而成之厚度8μm的第一表面層、由包含紫外線吸收劑的熱塑性樹脂(J1)而成之厚度31μm的中間層及由熱塑性樹脂(COP1)而成之厚度8μm的第二表面層之3層結構的多層薄膜。並且,此延伸薄膜的寬度為1330mm,厚度為47μm,遲相軸相對於延伸薄膜的長邊方向形成45°的角度。The pre-stretching film was stretched in an oblique direction neither parallel nor perpendicular to the longitudinal direction of the pre-stretching film under the conditions of a stretching temperature of 140° C. and a stretching speed of 20 m/min to obtain a stretched film as a base film. The obtained stretched film was sequentially provided with: a first surface layer made of a thermoplastic resin (COP1) with a thickness of 8 μm, an intermediate layer made of a thermoplastic resin (J1) containing an ultraviolet absorber with a thickness of 31 μm, and a thermoplastic resin. (COP1) is a multilayer film with a 3-layer structure of the second surface layer with a thickness of 8 μm. In addition, the width of this stretched film was 1330 mm, the thickness was 47 μm, and the slow axis formed an angle of 45° with respect to the longitudinal direction of the stretched film.
此延伸薄膜之在量測波長550nm的面內延遲為100nm,量測波長380nm的光線穿透率為0.02%,折射率為1.53。This stretched film has an in-plane retardation of 100 nm at a measurement wavelength of 550 nm, a light transmittance of 0.02% at a measurement wavelength of 380 nm, and a refractive index of 1.53.
(1-2.抗靜電薄膜的製造)(1-2. Manufacture of antistatic film)
對於作為基材薄膜之延伸薄膜的單面施以電暈處理(輸出0.4kW,放電量200W·min/m2 ),使用模塗布機將抗靜電劑(A1)以固化後獲得之抗靜電層的厚度成為2.2μm的方式塗布,形成抗靜電劑(A1)之膜。前述抗靜電劑(A1)的塗布係於相對濕度50%的環境下進行。之後,將此抗靜電劑(A1)之膜以60℃乾燥2分鐘後,藉由以高壓水銀燈照射累積光量564mJ/cm2 的光而使其固化,形成抗靜電層。藉此,獲得具備基材薄膜與設置於此基材薄膜上的抗靜電層之長條狀的抗靜電薄膜。Corona treatment (output 0.4kW, discharge amount 200W·min/m 2 ) was applied to one side of the stretched film as the base film, and the antistatic agent (A1) was cured by using a die coater to obtain an antistatic layer. The thickness of 2.2 μm was applied to form a film of the antistatic agent (A1). The coating of the said antistatic agent (A1) was performed in the environment of 50% of relative humidity. Then, after drying the film of the antistatic agent (A1) at 60° C. for 2 minutes, it was cured by irradiating light with a cumulative light amount of 564 mJ/cm 2 with a high-pressure mercury lamp to form an antistatic layer. Thereby, the elongated antistatic film provided with the base film and the antistatic layer provided on this base film is obtained.
藉由上述方法進行藉此所獲得之抗靜電薄膜的評價。結果揭示於表1。The evaluation of the antistatic film thus obtained was carried out by the above-mentioned method. The results are disclosed in Table 1.
[實施例2][Example 2]
使用在製造例2-2獲得之A2,代替在製造例2-1獲得之A1,作為抗靜電劑。As the antistatic agent, A2 obtained in Production Example 2-2 was used in place of A1 obtained in Production Example 2-1.
變更抗靜電劑的塗布厚度,將固化後獲得之抗靜電層的厚度做成1.51μm。The coating thickness of the antistatic agent was changed, and the thickness of the antistatic layer obtained after curing was set to 1.51 μm.
將為了抗靜電劑之膜的固化而照射之光的累積光量變更為386mJ/cm2 。The cumulative light amount of the light irradiated for curing the film of the antistatic agent was changed to 386 mJ/cm 2 .
除了以上諸點以外,比照實施例1操作,獲得抗靜電薄膜。將所獲得之抗靜電薄膜藉由上述方法評價。結果揭示於表1。Except for the above points, the antistatic film was obtained by operating according to Example 1. The obtained antistatic film was evaluated by the above-mentioned method. The results are disclosed in Table 1.
[實施例3][Example 3]
使用在製造例2-2獲得之A2,代替在製造例2-1獲得之A1,作為抗靜電劑。As the antistatic agent, A2 obtained in Production Example 2-2 was used in place of A1 obtained in Production Example 2-1.
變更抗靜電劑的塗布厚度,將固化後獲得之抗靜電層的厚度做成1.58μm。The coating thickness of the antistatic agent was changed, and the thickness of the antistatic layer obtained after curing was set to 1.58 μm.
將為了抗靜電劑之膜的固化而照射之光的累積光量變更為593mJ/cm2 。The cumulative light amount of the light irradiated for curing the film of the antistatic agent was changed to 593 mJ/cm 2 .
除了以上諸點以外,比照實施例1操作,獲得抗靜電薄膜。將所獲得之抗靜電薄膜藉由上述方法評價。結果揭示於表1。Except for the above points, the antistatic film was obtained by operating according to Example 1. The obtained antistatic film was evaluated by the above-mentioned method. The results are disclosed in Table 1.
[實施例4][Example 4]
使用在製造例2-2獲得之A2,代替在製造例2-1獲得之A1,作為抗靜電劑。As the antistatic agent, A2 obtained in Production Example 2-2 was used in place of A1 obtained in Production Example 2-1.
變更抗靜電劑的塗布厚度,將固化後獲得之抗靜電層的厚度做成1.3μm。The coating thickness of the antistatic agent was changed, and the thickness of the antistatic layer obtained after curing was set to 1.3 μm.
將為了抗靜電劑之膜的固化而照射之光的累積光量變更為300mJ/cm2 。The cumulative light amount of the light irradiated for curing the film of the antistatic agent was changed to 300 mJ/cm 2 .
除了以上諸點以外,比照實施例1操作,獲得抗靜電薄膜。將所獲得之抗靜電薄膜藉由上述方法評價。結果揭示於表1。Except for the above points, the antistatic film was obtained by operating according to Example 1. The obtained antistatic film was evaluated by the above-mentioned method. The results are disclosed in Table 1.
[比較例1][Comparative Example 1]
將為了抗靜電劑之膜的固化而照射之光的累積光量變更為188mJ/cm2 。The cumulative light amount of the light irradiated for curing the film of the antistatic agent was changed to 188 mJ/cm 2 .
除了以上諸點以外,比照實施例1操作,獲得抗靜電薄膜。將所獲得之抗靜電薄膜藉由上述方法評價。結果揭示於表2。Except for the above points, the antistatic film was obtained by operating according to Example 1. The obtained antistatic film was evaluated by the above-mentioned method. The results are disclosed in Table 2.
[比較例2][Comparative Example 2]
將為了抗靜電劑之膜的固化而照射之光的累積光量變更為282mJ/cm2 。The cumulative light amount of the light irradiated for curing the film of the antistatic agent was changed to 282 mJ/cm 2 .
除了以上諸點以外,比照實施例1操作,獲得抗靜電薄膜。將所獲得之抗靜電薄膜藉由上述方法評價。結果揭示於表2。Except for the above points, the antistatic film was obtained by operating according to Example 1. The obtained antistatic film was evaluated by the above-mentioned method. The results are disclosed in Table 2.
[比較例3][Comparative Example 3]
使用在製造例2-2獲得之A2,代替在製造例2-1獲得之A1,作為抗靜電劑。As the antistatic agent, A2 obtained in Production Example 2-2 was used in place of A1 obtained in Production Example 2-1.
變更抗靜電劑的塗布厚度,將固化後獲得之抗靜電層的厚度做成1.11μm。The coating thickness of the antistatic agent was changed, and the thickness of the antistatic layer obtained after curing was set to 1.11 μm.
將為了抗靜電劑之膜的固化而照射之光的累積光量變更為588mJ/cm2 。The cumulative light intensity of the light irradiated for curing the film of the antistatic agent was changed to 588 mJ/cm 2 .
除了以上諸點以外,比照實施例1操作,獲得抗靜電薄膜。將所獲得之抗靜電薄膜藉由上述方法評價。結果揭示於表2。Except for the above points, the antistatic film was obtained by operating according to Example 1. The obtained antistatic film was evaluated by the above-mentioned method. The results are disclosed in Table 2.
『表1』 表1
『表2』 表2
根據表1,可知實施例1~4相關的抗靜電薄膜,霧度值低而具有良好的透明性。From Table 1, it can be seen that the antistatic films according to Examples 1 to 4 have a low haze value and good transparency.
圖2係揭示實施例1~4及比較例1~3相關之抗靜電薄膜之殘留雙鍵率與電阻值變化率的關係的圖表。FIG. 2 is a graph showing the relationship between the residual double bond ratio and the resistance value change rate of the antistatic films according to Examples 1 to 4 and Comparative Examples 1 to 3. FIG.
圖3係揭示實施例1~4及比較例1~3相關之抗靜電薄膜之殘留雙鍵率與表面電阻值的關係的圖表。3 is a graph showing the relationship between the residual double bond ratio and the surface resistance value of the antistatic films according to Examples 1 to 4 and Comparative Examples 1 to 3. FIG.
根據圖2,可知Dre的值為大於2.5且未達6.1之實施例1~4的抗靜電薄膜,電阻值變化率小至未達4.7,抗靜電性的耐光性優異。另一方面,可知Dre的值為6.1以上之比較例1及2的抗靜電薄膜,電阻值變化率大至4.7以上,抗靜電性的耐光性低劣。並且,根據圖3,Dre的值為大於2.5且未達6.1之實施例1~4的抗靜電薄膜,表面電阻值為7.0×108 Ω/□以下,抗靜電性良好。另一方面,Dre的值為2.5以下之比較例3的抗靜電薄膜,電阻值變化率為1.9,但表面電阻值為大至7.1×108 Ω/□,抗靜電性低劣。2 , it can be seen that the antistatic films of Examples 1 to 4 whose Dre value is more than 2.5 and less than 6.1 have a small resistance value change rate of less than 4.7, and are excellent in antistatic and light resistance. On the other hand, it was found that the antistatic films of Comparative Examples 1 and 2 having a Dre value of 6.1 or more had a large resistance value change rate of 4.7 or more, and were inferior in antistatic light resistance. In addition, according to FIG. 3 , the antistatic films of Examples 1 to 4 in which the Dre value was more than 2.5 and less than 6.1 had a surface resistance value of 7.0×10 8 Ω/□ or less, and had good antistatic properties. On the other hand, the antistatic film of Comparative Example 3 with a Dre value of 2.5 or less had a resistance value change rate of 1.9, but the surface resistance value was as large as 7.1×10 8 Ω/□, and the antistatic property was inferior.
據此,可知實施例1~4的抗靜電薄膜,霧度值低而透明性良好,同時實現良好的抗靜電性及優異耐光性之兩者。From this, it was found that the antistatic films of Examples 1 to 4 had a low haze value and good transparency, and simultaneously achieved both good antistatic properties and excellent light resistance.
100‧‧‧抗靜電薄膜110‧‧‧基材薄膜120‧‧‧抗靜電層100‧‧‧Antistatic film110‧‧‧Substrate film120‧‧‧Antistatic layer
〈圖1〉圖1係概略揭示本發明之抗靜電薄膜之一實施型態的截面圖。<FIG. 1> FIG. 1 is a cross-sectional view schematically showing an embodiment of the antistatic film of the present invention.
〈圖2〉圖2係揭示實施例及比較例相關之抗靜電薄膜之殘留雙鍵率與電阻值變化率的關係的圖表。<FIG. 2> FIG. 2 is a graph showing the relationship between the residual double bond ratio and the resistance value change rate of the antistatic films according to the examples and the comparative examples.
〈圖3〉圖3係揭示實施例及比較例相關之抗靜電薄膜之殘留雙鍵率與表面電阻值的關係的圖表。<FIG. 3> FIG. 3 is a graph showing the relationship between the residual double bond ratio and the surface resistance value of the antistatic films according to the examples and the comparative examples.
100‧‧‧抗靜電薄膜 100‧‧‧Antistatic film
110‧‧‧基材薄膜 110‧‧‧Substrate film
120‧‧‧抗靜電層 120‧‧‧Antistatic layer
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-067700 | 2017-03-30 | ||
JP2017067700 | 2017-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201837109A TW201837109A (en) | 2018-10-16 |
TWI752204B true TWI752204B (en) | 2022-01-11 |
Family
ID=63677512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107110448A TWI752204B (en) | 2017-03-30 | 2018-03-27 | Antistatic film, polarizing plate, touch panel and liquid crystal display device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6939877B2 (en) |
KR (1) | KR102471351B1 (en) |
CN (1) | CN110383110B (en) |
TW (1) | TWI752204B (en) |
WO (1) | WO2018181070A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111205758A (en) * | 2020-02-26 | 2020-05-29 | 南京君弘新材料有限公司 | Transparent antistatic liquid and preparation method thereof |
JP2023032450A (en) * | 2021-08-27 | 2023-03-09 | 住友化学株式会社 | optical laminate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200624504A (en) * | 2004-10-08 | 2006-07-16 | Shinetsu Polymer Co | Conductive composition and production method thereof, antistatic coating material, antistatic coating, antistatic film, optical filter, and optical information recording medium, and capacitors and production method thereof |
CN102099716A (en) * | 2008-07-18 | 2011-06-15 | Lg化学株式会社 | Polarization plate and liquid crystal display |
TW201625419A (en) * | 2014-10-23 | 2016-07-16 | Zeon Corp | Antistatic film and liquid crystal display device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102012532B (en) * | 2009-09-03 | 2015-05-20 | 株式会社巴川制纸所 | Optical laminate, polarizing plate, and display apparatus using the same |
WO2013099658A1 (en) * | 2011-12-28 | 2013-07-04 | 大日本印刷株式会社 | Optical stack and image display device |
JP6016548B2 (en) * | 2012-09-19 | 2016-10-26 | 日揮触媒化成株式会社 | Coating liquid for forming transparent film and substrate with transparent film |
JPWO2016208716A1 (en) * | 2015-06-26 | 2018-04-12 | 日本ゼオン株式会社 | Antistatic film and method for producing the same, polarizing plate and liquid crystal display device |
TWI563298B (en) * | 2015-10-19 | 2016-12-21 | Sumika Technology Co Ltd | Electrostatic shielding polarizer and applying appratus thereof |
-
2018
- 2018-03-23 CN CN201880015404.4A patent/CN110383110B/en active Active
- 2018-03-23 KR KR1020197027414A patent/KR102471351B1/en active IP Right Grant
- 2018-03-23 WO PCT/JP2018/011921 patent/WO2018181070A1/en active Application Filing
- 2018-03-23 JP JP2019509743A patent/JP6939877B2/en active Active
- 2018-03-27 TW TW107110448A patent/TWI752204B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200624504A (en) * | 2004-10-08 | 2006-07-16 | Shinetsu Polymer Co | Conductive composition and production method thereof, antistatic coating material, antistatic coating, antistatic film, optical filter, and optical information recording medium, and capacitors and production method thereof |
CN102099716A (en) * | 2008-07-18 | 2011-06-15 | Lg化学株式会社 | Polarization plate and liquid crystal display |
TW201625419A (en) * | 2014-10-23 | 2016-07-16 | Zeon Corp | Antistatic film and liquid crystal display device |
Also Published As
Publication number | Publication date |
---|---|
KR102471351B1 (en) | 2022-11-25 |
JP6939877B2 (en) | 2021-09-22 |
CN110383110B (en) | 2021-05-11 |
CN110383110A (en) | 2019-10-25 |
WO2018181070A1 (en) | 2018-10-04 |
KR20190126087A (en) | 2019-11-08 |
TW201837109A (en) | 2018-10-16 |
JPWO2018181070A1 (en) | 2020-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2016208716A1 (en) | Antistatic film, manufacturing method therefor, polarizing plate and liquid crystal display device | |
US10609801B2 (en) | Antistatic film and liquid crystal display device | |
JP6554817B2 (en) | Optical laminate, hard coat laminate, polarizing plate and liquid crystal display device | |
CN108139505B (en) | Antistatic hard coat film, polarizing plate, touch panel, liquid crystal display device, and method for producing same | |
JP5633566B2 (en) | Hard coat film, polarizing plate and liquid crystal display device | |
JP2015011059A (en) | Polarizing plate and liquid crystal display device | |
TWI752204B (en) | Antistatic film, polarizing plate, touch panel and liquid crystal display device | |
JPWO2017104623A1 (en) | Deformed display device | |
TW201738596A (en) | Polarizing plate set and IPS mode liquid crystal display device using the same | |
WO2014178178A1 (en) | Polarizing plate and liquid crystal display device | |
JPWO2006019086A1 (en) | N3204PCT | |
JP2006178123A (en) | Antireflection laminate, polarizing plate, and liquid crystal display device | |
JP7382450B2 (en) | Polarizing plate and image display device | |
TW202426971A (en) | Polarizing Plate | |
JP2012123181A (en) | Polarization plate set, and liquid crystal panel and liquid crystal display device with the same |