TWI749832B - Etching solution, touch panel and manufacturing method thereof - Google Patents

Abstract

The present invention discloses an etching solution, a touch panel and a manufacturing method thereof. The manufacturing method of the touch panel includes the following operations. A substrate is provided, in which the substrate has a display area and a peripheral area. A metal layer and a metal nanowires layer are disposed, in which a first portion of the metal nanowires layer is disposed in the display area, and a second portion of the metal nanowires layer and the metal layer are disposed in the peripheral area. A patterning step is performed. The patterning step includes forming the metal layer into multiple peripheral wires and simultaneously forming the second portion of the metal nanowires layer into multiple etching layers, by using an etching solution that can etch the metal layer and the metal nanowire layer. The etching solution includes 0.2-40 wt% of a hydrogen peroxide, 0.2-20 wt% of an acid, 0.1-10 wt% of a metal corrosion inhibitor, 0.1-10 wt% of a stabilizer, and a balance of a solvent. In addition, an etching solution and a touch panel are also provided.

Description

Etching liquid, touch panel and manufacturing method thereof

The invention relates to an etching solution, a touch panel and a manufacturing method thereof.

In recent years, transparent conductors can allow light to pass through at the same time and provide appropriate conductivity, so they are often used in many display or touch-related devices. Generally speaking, the transparent conductor can be a variety of metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (Cadmium Tin Oxide, CTO), or aluminum-doped oxide. Zinc (Aluminum-doped Zinc Oxide, AZO). However, these metal oxide films cannot meet the flexibility requirements of the display device. Therefore, a variety of flexible transparent conductors have been developed today, such as transparent conductors made of materials such as nanowires.

However, there are still many problems that need to be solved in the process technology of nanowires. For example, when using nanowires to make touch electrodes, the leads of the nanowires and the surrounding area need to be reserved for alignment errors. , The alignment error area causes the lead size of the peripheral area to be unable to be reduced, which in turn leads to a larger width of the peripheral area. In particular, the roll to roll (Roll to Roll) process is adopted, and the deformation of the substrate causes the alignment error The size of the area is more enlarged (such as 150um), so that the minimum width of the peripheral area is only 2.5mm, so it cannot meet the needs of the narrow bezel of the display. Furthermore, the choice of etching solution is also a problem.

In some embodiments of the present invention, the patterning of the metal nanowire layer or the metal layer is directly performed by the etching solution, so as to achieve the purpose of simplifying the manufacturing process and controlling the manufacturing cost. The etching solution can provide good etching characteristics.

In some embodiments of the present invention, a one-time etching of the metal nanowire layer and the metal layer is used to achieve the effect of not needing to reserve an alignment error area during alignment, so as to form a peripheral lead with a smaller width. Meet the needs of narrow bezels.

In some embodiments of the present invention, the step-by-step etching of the metal nanowire layer and the metal layer is used to achieve the effect of eliminating the need to reserve an alignment error area when alignment, so as to form a peripheral lead with a smaller width, and then Meet the needs of narrow bezels. At the same time, the etching solution only selectively etches the metal nanowire layer, not the metal layer, thereby avoiding the problem of incomplete etching of the metal nanowire layer in the peripheral area and the display area or side etching of the metal layer in the peripheral area. .

According to some embodiments of the present invention, a method for fabricating a touch panel includes: providing a substrate, wherein the substrate has a display area and a peripheral area; disposing a metal layer and a metal nanowire layer, wherein the metal nano A first portion of the wire layer is located in the display area, a second portion of the metal nanowire layer and the metal layer are located in the peripheral area; and performing a patterning step, wherein the patterning step includes using the metal layer to be etched An etching solution with the metal nanowire layer forms the metal layer into a plurality of peripheral leads and simultaneously forms a plurality of etching layers on the second part of the metal nanowire layer, wherein the etching solution includes 0.2-40 wt% Of hydrogen peroxide, 0.2-20 wt% acid, 0.1-10 wt% metal corrosion inhibitor, 0.1-10 wt% stabilizer and the balance solvent.

In some embodiments of the present invention, the patterning step further includes using the etching solution to form the first portion of the metal nanowire layer into a touch sensing electrode, and the touch sensing electrode is disposed on the display area of the substrate, The touch sensing electrode is electrically connected to the peripheral leads.

In some embodiments of the present invention, the metal corrosion inhibitor includes nitrogen-containing, sulfur-containing or hydroxyl-containing organic compounds with surface activity, mercaptobenzothiazole, benzotriazole and tolyltriazole. At least one.

In some embodiments of the present invention, the stabilizer includes ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, and N-hydroxyethylethylenediaminetriacetic acid. At least one of acetic acid and polyacrylamide.

In some embodiments of the present invention, disposing the metal layer and the metal nanowire layer includes: disposing the metal layer in the peripheral area; and then disposing the metal nanowire layer in the display area and the peripheral area, the The first part is located in the display area and is formed on the substrate, and the second part is located in the peripheral area and is formed on the metal layer.

In some embodiments of the present invention, disposing the metal layer in the peripheral area includes: forming the metal layer in the peripheral area and the display area; and removing the metal layer located in the display area.

In some embodiments of the present invention, the composition of the etching solution includes 1.0-10.0 wt% hydrogen peroxide, 1.0-5.0 wt% acid, 2.0-7.0 wt% metal corrosion inhibitor, 3.0-8.0 wt% stabilizer, and The remainder of the solvent.

In some embodiments of the present invention, the patterning step further includes using the etching solution to form a plurality of marks on the metal layer. The etching layers include a plurality of first coverings and a plurality of second coverings, each of which The first covering is arranged on the corresponding peripheral leads, and each of the second coverings is arranged on the corresponding marks.

In some embodiments of the present invention, disposing the metal layer and the metal nanowire layer includes: disposing the metal nanowire layer in the display area and the peripheral area; and then disposing the metal layer in the peripheral area, wherein The metal layer is on the second part.

In some embodiments of the present invention, disposing the metal layer and the metal nanowire layer includes: disposing the metal layer in the peripheral area; and then disposing the metal nanowire layer in the display area and the peripheral area, the The first part is located in the display area and is formed on the substrate, and the second part is located in the peripheral area and is formed on the metal layer.

In some embodiments of the present invention, the composition of the etching solution includes 1.0-5.0 wt% hydrogen peroxide, 0.1-0.6 wt% acid, 2.0-7.0 wt% metal corrosion inhibitor, 3.0-8.0 wt% stabilizer, and The remainder of the solvent.

In some embodiments of the present invention, the patterning step further includes using the etching solution to form a plurality of marks on the metal layer. The etching layers include a plurality of first intermediate layers and a plurality of second intermediate layers. The first intermediate layer is arranged between the corresponding peripheral leads and the substrate, and each of the second intermediate layers is arranged between the corresponding marks and the substrate.

In some embodiments of the present invention, it further includes providing a film layer.

In some embodiments of the present invention, the manufacturing method is performed on one side or both sides of the substrate.

In some embodiments of the present invention, a touch panel is proposed.

According to some embodiments of the present invention, an etching solution for performing a patterning step includes: 0.2-40 wt% hydrogen peroxide, 0.2-20 wt% acid, 0.1-10 wt% metal corrosion inhibitor, 0.1 -10 wt% stabilizer and the balance solvent.

In some embodiments of the present invention, the acids include organic acids, inorganic acids or a combination thereof.

In some embodiments of the present invention, organic acids include carboxylic acid, dicarboxylic acid, tricarboxylic acid, alkyl carboxylic acid, acetic acid, oxalic acid, mellitic acid, formic acid, chloroacetic acid, benzoic acid, trifluoroacetic acid , At least one of propionic acid and butyric acid.

In some embodiments of the present invention, the inorganic acid includes at least one of phosphoric acid, nitric acid, and hydrochloric acid.

In some embodiments of the present invention, the metal corrosion inhibitor includes nitrogen-containing, sulfur-containing or hydroxyl-containing organic compounds with surface activity, mercaptobenzothiazole, benzotriazole and tolyltriazole. At least one.

In some embodiments of the present invention, the stabilizer includes ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, and N-hydroxyethylethylenediaminetriacetic acid. At least one of acetic acid and polyacrylamide.

According to some embodiments of the present invention, an etching solution for performing a patterning step includes: 0.01-50 wt% hydrogen peroxide, 0.1-10 wt% metal corrosion inhibitor, 0.1-10 wt% stabilizer, and The remainder of the solvent.

According to some embodiments of the present invention, a method for fabricating a touch panel includes: providing a substrate, wherein the substrate has a display area and a peripheral area; disposing a metal layer and a metal nanowire layer, wherein the metal nano A first portion of the wire layer is located in the display area, a second portion of the metal nanowire layer and the metal layer are located in the peripheral area; and performing a patterning step, wherein the patterning step includes using an etching solution for the metal The nanowire layer is etched, and another etching solution is used to etch the metal layer to form a plurality of peripheral leads on the metal layer and simultaneously form a plurality of etching layers on the second part of the metal nanowire layer, wherein The etching solution includes 0.01-50 wt% hydrogen peroxide, 0.1-10 wt% metal corrosion inhibitor, 0.1-10 wt% stabilizer, and the balance solvent.

Hereinafter, multiple embodiments of the present invention will be disclosed with the accompanying drawings. For clear description, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit the present invention. That is to say, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventionally used structures and elements will be shown in the drawings in a simple schematic manner.

Regarding the "about", "approximately" or "approximately" used in this article, the error or range of the index value is generally within 20%, preferably within 10%, and more preferably Within five percent. If there is no clear description in the text, the mentioned values are regarded as approximate values, that is, they have the error or range indicated by "about", "approximately" or "approximately".

The present invention provides an etching solution, the composition of which includes about 0.2-40 wt% hydrogen peroxide, about 0.2-20 wt% acids, about 0.1-10 wt% metal corrosion inhibitor, about 0.1-10 wt% stabilizer, and The remainder of the solvent. With the above etching solution, the first cover C1 can be disposed on the upper surface 124 of the peripheral lead 120 by a one-time etching step, so that the upper and lower layers of materials can be formed into the first cover C1 and the peripheral lead 120 without aligning. At a predetermined position, it is possible to reduce or avoid the need for setting a bit error area in the manufacturing process, thereby reducing the width of the peripheral area PA, thereby achieving the narrow frame requirement of the display. The etching solution of the present invention also includes about 20wt% to 99.9wt% of a solvent.

The present invention also provides an etching solution, the composition of which includes 0.01-50 wt% hydrogen peroxide, 0.1-10 wt% metal corrosion inhibitor, 0.1-10 wt% stabilizer, and the balance solvent. The above-mentioned etching solution selectively etches the metal nanowire layer NWL instead of the metal layer ML. The first cover C1 is arranged on the upper surface 124 of the peripheral lead 120 by step-by-step etching, so that the upper and lower layers of materials do not need to be aligned. The first cover C1 and the peripheral lead 120 can be formed in a predetermined position by the position, so it can reduce or avoid the need to set the bit error area in the manufacturing process, thereby reducing the width of the peripheral area PA, and thus achieve the narrowness of the display. Border requirements. The etching solution of the present invention also includes about 30wt%-99.9wt% solvent.

Please refer to FIGS. 2 to 2B first, which are schematic top views and schematic cross-sectional views of the touch panel 100 according to some embodiments of the present invention. The touch panel 100 includes a substrate 110, a peripheral lead 120, a first cover C1, a patterned layer PL, and a touch sensing electrode TE. Referring to Figure 2, the substrate 110 has a display area VA and a peripheral area PA. The peripheral area PA is arranged on the side of the display area VA. For example, the peripheral area PA may be arranged around the display area VA (that is, covering the right, left, and upper sides). And the lower side), but in other embodiments, the peripheral area PA may be an L-shaped area disposed on the left and lower sides of the display area VA. As shown in Figure 2, in this embodiment, there are a total of eight sets of peripheral leads 120 and the first cover C1 corresponding to the peripheral leads 120 are provided in the peripheral area PA of the substrate 110; the touch sensing electrode TE is roughly provided on the substrate 110 Display area VA.

The touch panel 100 further includes a mark 140 and a second cover C2. Referring to FIG. 2, the present embodiment has two sets of marks 140 and a second cover C2 corresponding to the marks 140 disposed on the peripheral area PA of the substrate 110. The number of the aforementioned peripheral leads 120, the marks 140, the first cover C1, the second cover C2, and the touch sensing electrode TE can be one or more, and the numbers drawn in the following specific embodiments and drawings are only For illustrative purposes, the present invention is not limited.

Specifically, referring to FIGS. 1A to 1C, the touch panel 100 in the embodiment of the present invention can be manufactured in the following manner: First, a substrate 110 is provided, on which a pre-defined peripheral area PA and a display area VA are provided. Next, a metal layer ML is formed in the peripheral area PA (as shown in Figure 1A); then a metal nanowires layer NWL is formed in the peripheral area PA and the display area VA (as shown in Figure 1B); and then a patterned layer PL is formed On the metal nanowire layer NWL (as shown in Figure 1C); then patterning is performed according to the patterned layer PL to form a patterned metal layer ML and a metal nanowire layer NWL. A more detailed description is given below.

Referring to FIG. 1A, a metal layer ML is formed on the peripheral area PA of the substrate 110, and the metal layer ML can be patterned to become the peripheral lead 120. In detail, in some embodiments of the present invention, the metal layer ML can be made of a metal with better conductivity, preferably a single-layer metal structure, such as a silver layer, a copper layer, etc.; or a multilayer conductive structure, such as molybdenum/ Aluminum/molybdenum, copper/nickel, titanium/aluminum/titanium, molybdenum/chromium, etc., the above metal structure is preferably opaque, for example, visible light (such as a wavelength between 400nm-700nm) has a light transmittance (Transmission) less than About 90%.

In this embodiment, the aforementioned metal can be formed on the substrate 110 by a sputtering method (such as but not limited to physical sputtering, chemical sputtering, etc.). The metal layer ML can be selectively formed in the peripheral area PA without being formed in the display area VA, or it can be formed in the peripheral area PA and the display area VA first, and then the metal located in the display area VA is removed by etching and other steps. Layer ML.

In one embodiment, the copper layer is deposited on the peripheral area PA of the substrate 110 by electroless plating. The electroless plating means that the metal ions in the plating solution are catalyzed by the metal catalyst with the help of a suitable reducing agent under the condition of no applied current. It is reduced to metal and plated on its surface. This process is called electroless plating, also called chemical plating or autocatalytic plating. Therefore, the metal layer ML of this embodiment It can also be called electroless plating, electroless plating or autocatalytic plating. Specifically, for example, a plating solution whose main component is copper sulfate can be used, and its composition can be, but not limited to: copper sulfate with a concentration of 5 g/L, and ethylenediaminetetraacetic acid with a concentration of 12 g/L. acid), formaldehyde with a concentration of 5g/L, the pH of the electroless copper plating solution is adjusted to about 11 to 13 with sodium hydroxide, the bath temperature is about 50 to 70°C, and the immersion reaction time For 1 to 5 minutes. In one embodiment, a catalytic layer (not shown) may be formed on the peripheral area PA of the substrate 110 first. Since there is no catalytic layer in the display area VA, the copper layer is only deposited on the peripheral area PA and not formed in the display area. VA. During the electroless plating reaction, the copper material can nucleate on the catalytic layer with catalytic/activation ability, and then continue to grow the copper film by the self-catalysis of copper.

Next, referring to Figure 1B, the metal nanowire layer NWL including at least metal nanowires, such as silver nanowires layer, gold nanowires layer, or copper nanowires nanowires) layer is coated on the peripheral area PA and the display area VA; the first part of the metal nanowire layer NWL is located in the display area VA, the first part is mainly formed on the substrate 110, and the second part of the peripheral area PA is mainly It is formed on the metal layer ML. The specific method in this embodiment is as follows: a dispersion or ink with metal nanowires is formed on the substrate 110 by a coating method, and dried to coat the substrate 110 and the aforementioned metal layer with the metal nanowires. The surface of the ML is further formed into a metal nanowire layer NWL disposed on the substrate 110 and the aforementioned metal layer ML. After the above-mentioned curing/drying step, the solvent and other substances are volatilized, and the metal nanowires are randomly distributed on the surface of the substrate 110 and the aforementioned metal layer ML; preferably, the metal nanowires are fixed on the substrate The metal nanowire layer NWL is formed on the surface of 110 and the aforementioned metal layer ML without falling off, and the metal nanowires can contact each other to provide a continuous current path, thereby forming a conductive network.

In the embodiment of the present invention, the above-mentioned dispersion liquid may be water, alcohol, ketone, ether, hydrocarbon or aromatic solvent (benzene, toluene, xylene, etc.); the above-mentioned dispersion liquid may also contain additives, surfactants or bonding agents. Agents, such as carboxymethyl cellulose (CMC), 2-hydroxyethyl cellulose (hydroxyethyl Cellulose; HEC), hydroxypropyl methylcellulose (HPMC), sulfonate, sulfate, Disulfonate, sulfosuccinate, phosphate or fluorine-containing interfacial active agent, etc. The dispersion or slurry containing metal nanowires can be formed on the surface of the substrate 110 and the aforementioned metal layer ML in any manner, such as but not limited to: screen printing, nozzle coating, roller coating, etc.; in a In an embodiment, a roll to roll (RTR) process may be used to coat the dispersion or slurry containing metal nanowires on the continuously supplied substrate 110 and the surface of the aforementioned metal layer ML.

As used herein, "metal nanowires" is a collective term that refers to a collection of metal wires containing multiple element metals, metal alloys or metal compounds (including metal oxides), which contain metal nanowires. The number does not affect the scope of protection claimed by the present invention; and at least one cross-sectional dimension (ie the diameter of the cross-section) of a single metal nanowire is less than about 500 nm, preferably less than about 100 nm, and more preferably less than about 50 nm ; And the metal nanostructure called "wire" in the present invention mainly has a high aspect ratio, such as between about 10 and 100,000. In more detail, the aspect ratio of the metal nanowire ( Length: the diameter of the section) can be greater than about 10, preferably greater than about 50, and more preferably greater than about 100; the metal nanowire can be any metal, including (but not limited to) silver, gold, copper, nickel, and gold-plated silver . Other terms, such as silk, fiber, tube, etc., if they also have the above-mentioned size and high aspect ratio, are also covered by the present invention.

Next, referring to FIG. 1C, a patterned layer PL is formed on the metal nanowire layer NWL. In one embodiment, the patterned layer PL is formed on the metal nanowire layer NWL in a patterned structure using flexography technology; in other words, the patterned layer PL is formed on the working surface (in In this embodiment, the metal nanowire layer (NWL) already has a specific pattern at the same time, so there is no need to perform a patterning step for the coated material. According to one or more specific examples of the present invention, the patterned layer PL uses relief printing, gravure printing, or screen printing to transfer the material to be printed onto the metal nanowire layer NWL according to a specific pattern. The patterned layer PL produced according to the foregoing method may have a printed side surface, which is different from the side surface that is processed and formed through traditional processes such as exposure, development or etching. In one embodiment, photoresist, dry film, etc. can be used to fabricate the patterned layer PL by yellow light lithography and etching processes.

The patterned layer PL can be formed in the peripheral area PA according to the aforementioned method, and can also be formed in the peripheral area PA and the display area VA. The patterned layer PL (also referred to as the second patterned layer) located in the peripheral area PA is mainly used as an etching mask in the peripheral area PA to be used to combine the metal nanowire layer NWL and the metal layer ML in the peripheral area PA in the following steps For patterning, the patterned layer PL (also known as the first patterned layer) located in the display area VA is mainly used as an etching mask in the display area VA for the metal nanowire layer in the display area VA in the following steps NWL is patterned.

The embodiment of the present invention does not limit the material of the patterned layer PL (that is, the aforementioned material to be printed). For example, the polymer material includes the following: various photoresist materials, undercoating materials, outer coating materials, protective layer materials, and insulating materials. Layer materials, etc., and the polymer material can be phenolic resin, epoxy resin, acrylic resin, PU resin, ABS resin, amino resin, silicone resin, etc. In terms of material characteristics, the material of the patterned layer PL may be a photo-curing type or a heat-curing type. In one embodiment, the material of the patterned layer PL has a viscosity of about 200-1500 cps and a solid content of about 30-100%.

Then, patterning is performed, and after the patterning step, the touch panel 100 as shown in FIG. 2 can be manufactured. In one embodiment, an etching solution that can simultaneously etch the metal nanowire layer NWL and the metal layer ML is used in the peripheral area PA. In the process, a patterned metal layer ML and a metal nanowire layer NWL are produced. As shown in Figures 2 and 2B, the patterned metal layer ML formed on the peripheral area PA is the peripheral lead 120, and the patterned metal nanowire layer NWL is the etching layer. Because of this embodiment The etching layer in the example is located on the peripheral lead 120, so it can also be called the first cover C1; in other words, after the patterning step, the peripheral area PA forms the first cover formed by the second part of the metal nanowire layer NWL The object C1 and the peripheral lead 120 formed by the metal layer ML. In another embodiment, an etching layer composed of the second part of the metal nanowire layer NWL and a peripheral lead 120 and a mark 140 composed of the metal layer ML can be fabricated on the peripheral area PA (please refer to Section 2 Figure, Figure 2A and Figure 2B), the etching layer may include a first cover C1 and a second cover C2, the first cover C1 is disposed on the corresponding peripheral lead 120, and the second cover C2 is disposed on the corresponding Mark on 140. In one embodiment, the ability to simultaneously etch the metal nanowire layer NWL and the metal layer ML means that the ratio of the etching rate to the metal nanowire layer NWL and the metal layer ML is about 0.1-10 or 0.01-100.

According to a specific embodiment, when the metal nanowire layer NWL is a nanosilver layer and the metal layer ML is a copper layer, the etching solution can be used to etch copper and silver. For example, the composition of the etching solution includes hydrogen peroxide, such as about 1.0-2.0 , 5.0-10.0, 20.0-40.0, or 1.0-10.0 wt%; acids, such as about 1.0-5.0, 1.0-20.0, or 0.1-10.0 wt%; metal corrosion inhibitors, such as about 0.1-10.0, 1.0-10.0, or 2.0- 7.0 wt%; stabilizer, for example, about 0.1-10.0, 1.0-10.0, or 3.0-8.0 wt%; and the remainder of the solvent. Acids may include organic acids, inorganic acids, or combinations thereof, where organic acids may include such as carboxylic acid, dicarboxylic acid, tricarboxylic acid, alkyl carboxylic acid, acetic acid, oxalic acid, mellitic acid, formic acid, chloroacetic acid, At least one of benzoic acid, trifluoroacetic acid, propionic acid, butyric acid, etc.; the inorganic acid may include at least one of phosphoric acid, nitric acid, hydrochloric acid, and the like. The metal corrosion inhibitor may include at least one of nitrogen-containing, sulfur-containing or hydroxyl-containing organic compounds with surface activity, mercaptobenzothiazole, benzotriazole, and tolyltriazole. The stabilizer may include at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide . According to a specific embodiment, when the metal nanowire layer NWL is a nanosilver layer and the metal layer ML is an electroless copper plating layer, the etching solution can be used to etch copper and silver. For example, the composition of the etching solution includes about 1.0-10.0 wt % Hydrogen peroxide, about 1.0-5.0 wt% acid, about 2.0-7.0 wt% metal corrosion inhibitor, about 3.0-8.0 wt% stabilizer and the balance solvent. According to a specific embodiment, when the metal nanowire layer NWL is a nanosilver layer and the metal layer ML is an electroless copper-nickel layer, the etching solution can be used to etch copper-nickel and silver. For example, the composition of the etching solution includes about 0.2- 10.0 wt% hydrogen peroxide, about 1.0-20.0 wt% acids, about 2.0-5.0 wt% metal corrosion inhibitors, about 3.0-5.0 wt% stabilizers, and the balance solvent.

In the step of patterning, it may further include: simultaneously performing NWL patterning of the metal nanowire layer in the display area VA. In other words, as shown in Figure 1C, the etching mask formed by the patterned layer PL (that is, the first patterned layer) can be used to perform the first part of the metal nanowire layer NWL in the display area VA with the aforementioned etching solution. Patterning is used to fabricate the touch sensing electrode TE of this embodiment in the display area VA, and the touch sensing electrode TE can be electrically connected to the peripheral lead 120. Specifically, the touch sensing electrode TE can also be a metal nanowire layer including at least a metal nanowire, that is, the patterned metal nanowire layer NWL forms the touch sensing electrode TE in the display area VA. The first cover C1 is formed in the peripheral area PA, so the touch sensing electrode TE can achieve electrical connection with the peripheral lead 120 for signal transmission through the contact between the first cover C1 and the peripheral lead 120. The metal nanowire layer NWL will also form a second cover C2 in the peripheral area PA, which is disposed on the upper surface 144 of the mark 140. The mark 140 can be widely interpreted as a pattern with non-electrical functions, but not as a pattern. limit. In some embodiments of the present invention, the peripheral lead 120 and the mark 140 may be made of the same layer of metal layer ML (that is, both are made of the same metal material, such as the aforementioned electroless copper layer or sputtered copper layer); The touch sensing electrode TE, the first covering C1 and the second covering C2 can be made of the same metal nanowire layer NWL.

In one embodiment, the width of the pattern in the display area VA can be at least 100 um, so the aforementioned etching solution will not cause the problem of side etching on the metal nanowire layer NWL in the display area VA.

In another embodiment, when the patterning step is performed, a selective etching solution is used to perform step-by-step etching in the peripheral area PA. The etching solution is only used to etch the metal nanowire layer NWL, and not the metal layer ML. . In detail, first, the metal nanowire layer NWL of the peripheral area PA and the display area VA is etched with an etching solution, and then another etching solution is used to etch the metal layer ML of the peripheral area PA. In this way, the etching mask formed by the patterned layer PL (also called the second patterned layer) is used to produce the patterned metal layer ML and the metal nanowire layer NWL in the same process. As shown in Figures 2 and 2B, the patterned metal layer ML formed on the peripheral area PA is the peripheral lead 120, and the patterned metal nanowire layer NWL is the etching layer. Because of this embodiment The etching layer in the example is located on the peripheral lead 120, so it can also be called the first cover C1; in other words, after the patterning step, the peripheral area PA forms the first cover formed by the second part of the metal nanowire layer NWL The object C1 and the peripheral lead 120 formed by the metal layer ML. In another embodiment, an etching layer composed of the second part of the metal nanowire layer NWL and a peripheral lead 120 and a mark 140 composed of the metal layer ML can be fabricated on the peripheral area PA (please refer to Section 2 Figure, Figure 2A and Figure 2B), the etching layer may include a first cover C1 and a second cover C2, the first cover C1 is disposed on the corresponding peripheral lead 120, and the second cover C2 is disposed on the corresponding Mark on 140.

According to another specific embodiment, when the metal nanowire layer NWL is a nanosilver layer and the metal layer ML is a copper layer, the etching solution is only used to etch silver and not copper. For example, the composition of the etching solution includes 0.01- 50 wt% hydrogen peroxide, 0.1-10 wt% metal corrosion inhibitor, 0.1-10 wt% stabilizer and the balance solvent. The metal corrosion inhibitor may include at least one of nitrogen-containing, sulfur-containing or hydroxyl-containing organic compounds with surface activity, mercaptobenzothiazole, benzotriazole, and tolyltriazole. The stabilizer may include at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide .

Since the aforementioned etching solution does not etch the metal layer ML, the problem of incomplete etching of the metal nanowire layer NWL in the peripheral area PA and the display area VA or side etching of the metal layer ML in the peripheral area PA is avoided.

After the step of patterning, the method may further include: removing the patterned layer PL.

In addition, the film layer and the metal nanowire layer NWL (such as the first cover C1, the second cover C2 or the touch sensing electrode TE) can be coated before or after the aforementioned etching step to form a composite structure with certain specific chemistry. , Mechanical and optical properties, such as providing the touch sensing electrode TE, the adhesion of the first cover C1, the second cover C2 and the substrate 110, or better physical mechanical strength, so the film layer can also be called a matrix (matrix). On the other hand, some specific polymers are used to make the film layer, so that the touch sensing electrode TE, the first cover C1, and the second cover C2 have additional surface protection against scratches and abrasion. In this case, The film layer can also be called an overcoat, and it can be touch sensitive by using polyacrylate, epoxy resin, polyurethane, polysiloxane, polysiloxane, poly(silicon-acrylic acid), etc. The electrode TE, the first cover C1, and the second cover C2 have higher surface strength to improve scratch resistance. However, the foregoing is only to illustrate the possibility of other additional functions/names of the film layer, and is not intended to limit the present invention. It is worth noting that, in one embodiment, the polymer used to make the film layer can penetrate between the metal nanowires to form a filler before being cured or in a pre-cured state. When the polymer is cured, the metal Nanowires will be embedded in the film. That is, the present invention does not limit the structure between the film layer and the metal nanowire layer NWL (for example, the first cover C1, the second cover C2 or the touch sensing electrode TE).

In one embodiment, the film layer may be a photocurable material with high light transmittance, low dielectric constant, and low haze, so as to maintain the TE penetration of the touch sensing electrode in the display area VA at about 88% -94%, haze is about 0-2, sheet resistance is about 10-150 ohm/square (ohm/square). The photoelectric properties of the above film make the combination of film and metal nanowire layer NWL consistent with The optical and touch sensing requirements of the display area VA. For example, the light transmittance (Transmission) of the visible light (such as the wavelength between about 400nm-700nm) of the composite structure may be greater than about 80%, and the surface resistance (surface resistance) is about 10 to 1000 ohms/square (ohm /square); preferably, the visible light (for example, the wavelength is between about 400nm-700nm) of the composite structure has a light transmittance (Transmission) greater than about 85%, and a surface resistance (surface resistance) of about 50 to 500 Between ohm/square. In this embodiment, a curing step (such as UV curing) may also be included.

FIG. 2 shows a schematic top view of the touch panel 100 according to an embodiment of the present invention. FIG. 2A and FIG. 2B are cross-sectional views taken along the lines A-A and B-B of FIG. 2, respectively. Please refer to FIG. 2A first. As shown in FIG. 2A, the peripheral lead 120 and the mark 140 are both disposed in the peripheral area PA, and the first cover C1 and the second cover C2 are respectively formed and cover the upper surface 124 and the upper surface of the peripheral lead 120 Mark the upper surface 144 of 140. In some embodiments of the present invention, the metal nanowire may be a silver nanowire. For the convenience of description, the cross-section of the peripheral lead 120 and the mark 140 is a quadrilateral (for example, the rectangle drawn in FIG. 2A), but the side 122 and the upper surface 124 of the peripheral lead 120, and the side 142 and the upper surface of the mark 140 The structure and number of 144 can be changed according to actual applications, and are not limited by the text and drawings in this article.

In this embodiment, the mark 140 is provided in the bonding area BA of the peripheral area PA, which is a docking bit mark, that is, in the step of connecting an external circuit board, such as the flexible circuit board 170, to the touch panel 100 (Ie, the bonding step) is used to mark the position of the flexible circuit board 170 and the touch panel 100 (please refer to Fig. 2). However, the present invention does not limit the placement position or function of the mark 140. For example, the mark 140 can be any check mark, pattern or label required in the manufacturing process, which is within the scope of protection of the present invention. The mark 140 may have any possible shape, such as a circle, a quadrilateral, a cross, an L-shape, a T-shape, and so on. On the other hand, the portion of the peripheral lead 120 that extends to the bonding area BA can also be referred to as a bonding section. Similar to the foregoing embodiment, the upper surface of the connection portion in the bonding area BA is also covered by the first cover C1. cover.

As shown in FIGS. 2A and 2B, in the peripheral area PA, there is a non-conductive area 136 between adjacent peripheral leads 120 to electrically block the adjacent peripheral leads 120 to avoid short circuits. In other words, there is a non-conductive area 136 between the side surfaces 122 of adjacent peripheral leads 120, and in this embodiment, the non-conductive area 136 is a gap to isolate the adjacent peripheral leads 120. With the patterned layer PL, the aforementioned etching solution can be used to make the above-mentioned gap, so the side surface 122 of the peripheral lead 120 and the side surface C1L of the first cover C1 are a common etching surface and are aligned with each other, that is, the patterned layer PL is used as a reference, the side surface 122 of the peripheral lead 120 and the side surface C1L of the first cover C1 are formed in the same etching step according to the printed side surface of the patterned layer PL, so the printed side surface and the common etching surface are aligned with each other; similarly, The side surface 142 of the mark 140 and the side surface C2L of the second cover C2 are a common etching surface and are aligned with each other, and the printed side surface of the patterned layer PL is also aligned with the common etching surface. In one embodiment, the side surface C1L of the first cover C1 and the side surface C2L of the second cover C2 will not have the metal nanowires on them due to the above-mentioned etching step. Furthermore, the patterned layer PL, the peripheral leads 120, and the first cover C1 will have the same or similar patterns and sizes, such as long and straight patterns, and the same or similar widths; the patterned layer PL, the mark 140 It also has the same or similar pattern and size as the second cover C2, such as a circle with the same or similar radius, a quadrilateral with the same or similar side length, etc., or other the same or similar cross, L-shape, T Shapes and other patterns.

As shown in FIG. 2B, in the display area VA, there is a non-conductive area 136 between adjacent touch sensing electrodes TE to electrically block the adjacent touch sensing electrodes TE to avoid short circuits. In other words, there is a non-conductive area 136 between the sidewalls of adjacent touch sensing electrodes TE, and in this embodiment, the non-conductive area 136 is a gap to isolate the adjacent touch sensing electrodes TE; In one embodiment, the above-mentioned etching method may be used to form the gap between adjacent touch sensing electrodes TE. In this embodiment, the touch sensing electrode TE and the first cover C1 can use the same metal nanowire layer NWL (such as a silver nanowire layer, or a composite layer formed by a silver nanowire layer and a film layer). ), so at the junction of the display area VA and the peripheral area PA, the metal nanowire layer NWL will form a climbing structure, so that the metal nanowire layer NWL is formed and covers the upper surface 124 of the peripheral lead 120, and The first cover C1 is formed.

In some embodiments of the present invention, the first cover C1 of the touch panel 100 is disposed on the upper surface 124 of the peripheral lead 120, and the first cover C1 and the peripheral lead 120 are formed in the same etching process, so the reduction or reduction can be achieved. To avoid the need to set bit error areas in the manufacturing process, so as to reduce the width of the peripheral area PA, thereby achieving the narrow frame requirement of the display; and the etching solution proposed in the present invention can simultaneously target the material layers of different areas, such as the peripheral area PA. The metal/nanosilver and the nanosilver in the display area VA are etched to form lines, and have good linearity and CD bias control, and no material remains in the non-conductive area 136. Specifically, the width of the peripheral leads 120 of the touch panel 100 in some embodiments of the present invention is about 5um to 30um, and the distance between adjacent peripheral leads 120 is about 5um to 30um, or the peripheral leads 120 of the touch panel 100 The width is about 3um to 20um, the distance between adjacent peripheral leads 120 is about 3um to 20um, and the width of the peripheral area PA can also reach a size of less than 2mm, which is reduced by about 20% compared to traditional touch panel products. More border sizes.

In some embodiments of the present invention, the touch panel 100 further has a second cover C2 and a mark 140. The second cover C2 is disposed on the upper surface 144 of the mark 140. The second cover C2 and the mark 140 are in the same etching process. In molding.

Figure 3 shows the assembly structure of the flexible circuit board 170 and the touch panel 100 after alignment, wherein the electrode pads (not shown) of the flexible circuit board 170 can be made of conductive glue (not shown, such as anisotropic conductive The glue) is electrically connected to the peripheral leads 120 of the bonding area BA on the substrate 110. In some embodiments, the first cover C1 located in the bonding area BA may have an opening (not shown) to expose the peripheral leads 120, and conductive adhesive (for example, anisotropic conductive adhesive) may be filled into the first cover C1 The opening directly contacts the peripheral lead 120 to form a conductive path. In this embodiment, the touch sensing electrodes TE are arranged in a non-staggered arrangement. For example, the touch sensing electrode TE is an elongated electrode extending along the first direction D1 and having a width change in the second direction D2, and does not intersect each other. However, in other embodiments, the touch sensing electrode TE It can have an appropriate shape, and should not limit the scope of the present invention. In this embodiment, the touch sensing electrode TE adopts a single-layer configuration, in which the touch position can be obtained by detecting the change in the capacitance value of each touch sensing electrode TE.

The present invention can also apply the above method to both sides of the substrate 110 to produce a double-sided touch panel 100. For example, it can be produced in the following manner: first, a substrate 110 is provided, which has a predefined peripheral area PA and a display District VA. Next, a metal layer ML is formed on the opposite first and second surfaces (such as the upper surface and the lower surface) of the substrate 110, and the metal layer ML is located in the peripheral area PA; then, a metal nanowire layer NWL is formed on the second surface respectively. The peripheral area PA and the display area VA of the first surface and the second surface; then a patterned layer PL is formed on the metal nanowire layer NWL on the first and second surfaces, respectively; The step of patterning with the second surface is to form the touch sensing electrode TE and the peripheral lead 120 on the first and second surfaces, and the first covering C1 will cover the peripheral lead 120, as shown in FIG. 4. The specific implementation of this embodiment (for example, the composition parameters of the etching solution) can refer to the foregoing, and will not be repeated here.

According to some embodiments of the present invention, a double-sided touch panel is further proposed. The manufacturing method of the double-sided touch panel can be formed by stacking two sets of single-sided touch panels in the same direction or in the opposite direction. Taking reverse direction stacking as an example, the touch electrodes of the first group of single-sided touch panels can be set up (for example, closest to the user, but not limited to this), and the second group of single-sided touch panels The touch electrodes of the touch panel are arranged downwards (for example, farthest away from the user, but not limited to this), and the two sets of touch panel substrates are assembled and fixed with optical glue or other similar adhesives to form a double-sided Type of touch panel. The specific implementation of this embodiment (for example, the composition parameters of the etching solution) can refer to the foregoing, and will not be repeated here.

Figure 5 is a touch panel 100 according to an embodiment of the present invention. The sensing electrode TE1 and the second touch sensing electrode TE2) and the peripheral leads 120 formed on the upper and lower surfaces of the substrate 110; for brevity of the drawing, the first and second coverings C1 and C2 are not shown in FIG. Viewed from the upper surface of the substrate 110, the first touch sensing electrode TE1 of the display area VA and the peripheral leads 120 of the peripheral area PA are electrically connected to each other to transmit signals; similarly, viewed from the lower surface of the substrate 110, the display The second touch sensing electrode TE2 of the area VA and the peripheral lead 120 of the peripheral area PA are electrically connected to each other to transmit signals. In addition, the first touch sensing electrode TE1 and the second touch sensing electrode TE2 are formed alternately; the peripheral lead 120 is composed of a metal layer ML, on which a first cover C1 is formed (also shown in FIG. 5A). The present embodiment may also have a mark 140 and a second cover C2 corresponding to the mark 140 disposed on the peripheral area PA of the substrate 110. For details, please refer to the foregoing content.

Please refer to FIG. 5 in conjunction with the cross-sectional view shown in FIG. 5A. In one embodiment, the first touch sensing electrode TE1 is substantially located in the display area VA, and it may include a plurality of electrodes extending in the same direction (such as the first direction D1) The long and straight sensing electrode, and the area removed by the aforementioned etching solution can be defined as a non-conductive area 136 to electrically block adjacent sensing electrodes. Similarly, the second touch sensing electrode TE2 is roughly located in the display area VA, and it can include a plurality of long and straight sensing electrodes extending in the same direction (such as the second direction D2), and the removed area can be defined as a non- The conductive area 136 electrically blocks adjacent sensing electrodes. The first touch sensing electrode TE1 and the second touch sensing electrode TE2 are interlaced in structure, and the two can form the touch sensing electrode TE for sensing touch or controlling gestures.

Referring to FIGS. 6A to 6C, the touch panel in another embodiment of the present invention can be manufactured in the following manner: first, a substrate 110 is provided, on which a pre-defined peripheral area PA and a display area VA are provided. Next, a metal nanowires layer NWL is formed in the peripheral area PA and the display area VA; then a metal layer ML is formed in the peripheral area PA (as shown in Figure 6A); then a patterned layer PL is formed on the metal nanowire layer On the NWL (as shown in Figure 6B); then patterning is performed according to the patterned layer PL to form a patterned metal layer ML and a metal nanowire layer NWL (as shown in Figure 6C). The difference between this embodiment and the previous embodiment is at least the forming sequence of the metal layer ML and the metal nanowire layer NWL. In other words, this embodiment first produces the metal nanowire layer NWL and then the metal layer ML. The specific implementation of this step can refer to the foregoing, for example, the pattern of the patterned layer PL is transferred to the metal layer ML and the metal nanowire layer NWL through steps such as etching.

In this embodiment, the etching solution can also be used to etch copper (ie, metal layer ML) and silver nanowire layer (ie, metal nanowire layer NWL). For example, the composition of the etching solution includes hydrogen peroxide, such as about 1.0-2.0, 5.0- 10.0, 20.0-40.0, or 1.0-5.0 wt%; acids, such as about 0.1-0.6, 1.0-5.0, 1.0-20.0, or 0.1-10.0 wt%; metal corrosion inhibitors, such as about 0.1-10.0, 1.0-10.0 or 2.0 -7.0 wt%; stabilizer, for example, about 0.1-10.0, 1.0-10.0, or 3.0-8.0 wt%; and the balance of the solvent. Acids may include organic acids, inorganic acids, or combinations thereof, where organic acids may include such as carboxylic acid, dicarboxylic acid, tricarboxylic acid, alkyl carboxylic acid, acetic acid, oxalic acid, mellitic acid, formic acid, chloroacetic acid, At least one of benzoic acid, trifluoroacetic acid, propionic acid, butyric acid, etc.; the inorganic acid may include at least one of phosphoric acid, nitric acid, hydrochloric acid, and the like. The metal corrosion inhibitor may include at least one of nitrogen-containing, sulfur-containing or hydroxyl-containing organic compounds with surface activity, mercaptobenzothiazole, benzotriazole, and tolyltriazole. The stabilizer may include at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide . According to a specific embodiment, when the metal nanowire layer NWL is a nanosilver layer and the metal layer ML is an electroless copper plating layer, the etching solution can be used to etch copper and silver. For example, the etching solution includes about 1.0-5.0 wt. % Hydrogen peroxide, about 0.1-0.6 wt% acid, about 2.0-7.0 wt% metal corrosion inhibitor, about 3.0-8.0 wt% stabilizer and the balance solvent. According to a specific embodiment, when the metal nanowire layer NWL is a nanosilver layer and the metal layer ML is an electroless copper-nickel layer, the etching solution can be used to etch copper-nickel and silver. For example, the composition of the etching solution includes about 0.2- 10.0 wt% hydrogen peroxide, about 0.1-10.0 wt% acids, about 2.0-5.0 wt% metal corrosion inhibitors, about 3.0-5.0 wt% stabilizers, and the balance solvent.

After the step of patterning, the step of removing the patterned layer PL is further included. In specific embodiments, it can be stripped off by organic solvents or alkaline removers, such as KOH, K ₂ CO ₃ , Propylene Glycol Methyl Ether Acetate (PGMEA), and the like. In other words, after the above steps, the patterned layer PL will be removed without remaining in the structure of the product.

Please refer to Figures 13A to 13E. In another embodiment, for the above-mentioned case where the metal nanowire layer NWL is first fabricated, and then the metal layer ML is fabricated, the touch panel can also be fabricated in the following way: first provide a substrate 110, there is a pre-defined peripheral area PA and a display area VA thereon. Next, a metal nanowires (metal nanowires) layer NWL is formed in the peripheral area PA and the display area VA. The difference from the above embodiment is that a metal layer ML is then formed on the peripheral area PA and the display area VA (as shown in Figure 13A); then a patterned layer PL is formed on the metal layer ML (as shown in Figure 13B); and then according to the patterning The layer PL is patterned to form a patterned metal layer ML and a metal nanowire layer NWL. In this embodiment, when the patterning step is performed, a selective etching solution is used to perform stepwise etching. The etching solution is only used to etch the metal nanowire layer NWL, and not the metal layer ML. In detail, first use another etching solution to etch the metal layer ML in the peripheral area PA and the display area VA (as shown in Figure 13C). The other etching solution only etches the metal layer ML, but does not etch the metal nanowire layer NWL. Then, an etching solution is used to etch the metal nanowire layer NWL in the peripheral area PA and the display area VA (as shown in Figure 13D). The patterned layer PL of the display area VA is removed, and another etching solution is used to continue etching the metal layer ML of the display area VA to completely etch and remove the metal layer ML of the display area VA (as shown in FIG. 13E). Finally, the patterned layer PL of the peripheral area PA is removed.

According to another specific embodiment, when the metal nanowire layer NWL is a nanosilver layer and the metal layer ML is a copper layer, the etching solution is only used to etch silver and not copper. For example, the composition of the etching solution includes 0.01- 50wt% hydrogen peroxide, 0.1-10 wt% metal corrosion inhibitor, 0.1-10 wt% stabilizer and the balance solvent. The metal corrosion inhibitor may include at least one of nitrogen-containing, sulfur-containing or hydroxyl-containing organic compounds with surface activity, mercaptobenzothiazole, benzotriazole, and tolyltriazole. The stabilizer may include at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide .

Since the aforementioned etching solution does not etch the metal layer ML, the problem of incomplete etching of the metal nanowire layer NWL in the peripheral area PA and the display area VA or side etching of the metal layer ML in the peripheral area PA is avoided.

The step of removing the patterned layer PL. In specific embodiments, it can be stripped off by organic solvents or alkaline removers, such as KOH, K ₂ CO ₃ , Propylene Glycol Methyl Ether Acetate (PGMEA), and the like. In other words, after the above steps, the patterned layer PL will be removed without remaining in the structure of the product.

For other detailed manufacturing methods of this embodiment, reference may be made to the foregoing, and will not be repeated here.

Please refer to FIG. 7, which shows the touch panel 100 (with the patterned layer PL removed) completed according to the embodiment of the present invention. In this way, the AA profile can be seen in the peripheral area PA, and the BB profile can be seen in the peripheral area PA and the display area VA. As shown in Figures 7A and 7B, the metal nanowire layer NWL and the metal layer ML located in the peripheral area PA can form voids (ie, non-conductive regions 136) after an etching step (such as using the aforementioned one-time etching solution) That is, in the peripheral area PA, an etching layer formed by patterning the metal nanowire layer NWL and a peripheral lead 120 formed by the metal layer ML are formed; since the etching layer is located between the peripheral lead 120 and the substrate 110, it can be It is called the first intermediate layer M1. In other words, there is a first intermediate layer M1 that is also patterned under the peripheral leads 120, and there is a non-conductive area 136 between adjacent peripheral leads 120; The side surface M1L of an intermediate layer M1 is a common etching surface and is aligned with each other, that is to say, the side wall of the patterned layer PL is used as a reference in the patterning step, the side surface 122 of the peripheral lead 120 and the side surface M1L of the first intermediate layer M1 It is formed according to the sidewall of the patterned layer PL by using the aforementioned disposable etching solution in the same etching step. Since the structure layer of the peripheral area PA is patterned in the same step, the traditional bit alignment step can be omitted, thereby reducing or avoiding the need for setting bit error areas in the manufacturing process, thereby reducing the width of the peripheral area PA , And then meet the requirement of narrow bezel of touch panel/touch display.

In another embodiment, the peripheral area PA may have an etching layer composed of a metal nanowire layer NWL and a peripheral lead 120 and a mark 140 composed of a metal layer ML, and the etching layer may include a first intermediate layer M1 and the second intermediate layer M2. The first intermediate layer M1 is arranged between the peripheral lead 120 and the substrate 110, the second intermediate layer M2 is arranged between the mark 140 and the substrate 110, and the side surface 142 of the mark 140 is connected to the second intermediate layer M2 The side surface M2L is a common etching surface, and they are aligned with each other.

As shown in FIG. 7B, in the display area VA, the metal nanowire layer NWL also uses the patterned layer PL as an etching mask, and the touch sensing electrode TE is formed in the aforementioned patterning step. In this embodiment, the metal nanowire layer NWL is patterned to form voids to form non-conductive areas 136 between adjacent touch sensing electrodes TE. Furthermore, the touch sensing electrode TE can be electrically connected to the peripheral lead 120 through the metal nanowire layer NWL extending to the peripheral area PA.

In another embodiment, the aforementioned touch panel 100 may include a film layer 130 or a protective layer. For example, FIG. 8 is a schematic diagram of the film layer 130 formed on the embodiment shown in FIG. 7B. In one embodiment, the film layer 130 covers the touch panel 100 comprehensively. For example, the film layer 130 may be disposed in the display area VA and the peripheral area PA to cover the touch sensing electrode TE, the peripheral leads 120 and/or the markings. Above 140. As shown in the figure, in the peripheral area PA, the film layer 130 covers the first peripheral lead 120, and the film 130 fills the non-conductive area 136 between adjacent peripheral leads 120, that is, adjacent peripheral leads 120 There is a filling layer made of the same material as the film layer 130 in the non-conductive area 136 therebetween. In addition, in terms of a single set of corresponding peripheral leads 120 and the first intermediate layer M1, the film layer 130 will surround the single set of corresponding peripheral leads 120 and the first intermediate layer M1. Similarly, in terms of a single set of corresponding marks 140 and the second intermediate layer M2, the film layer 130 will surround the single set of corresponding marks 140 and the second intermediate layer M2.

In the display area VA, the film layer 130 covers the touch sensing electrode TE, and the film layer 130 fills the non-conductive area 136 between adjacent touch sensing electrodes TE, that is, adjacent touch sensing electrodes TE The non-conductive area 136 between the electrodes TE has a filling layer made of the same material as the film layer 130 to isolate adjacent touch sensing electrodes TE.

In some embodiments of the present invention, the material of the film layer 130 may be non-conductive resin or other organic materials. For example, the film layer 130 may be polyethylene (PE), polypropylene (PP), or polypropylene. Vinyl butyral (Polyvinyl butyral; PVB), polycarbonate (PC), acrylonitrile-butadiene-styrene copolymer (Acrylonitrile butadiene styrene; ABS), poly(3,4-ethylenedioxy) Thiophene) (PEDOT), poly(styrene sulfonic acid) (PSS) or ceramic materials, etc. In an embodiment of the present invention, the film layer 130 may be the following polymer, but is not limited thereto: Polyacrylic resin, such as polymethacrylate (for example, poly(methyl methacrylate)), polyacrylate And polyacrylonitrile; polyvinyl alcohol; polyester (for example, polyethylene terephthalate (PET), polyester naphthalate and polycarbonate); polymers with high aromaticity, such as phenolic resins Or cresol-formaldehyde, polystyrene, polyvinyl toluene, polyvinyl xylene, polyimide, polyimide, polyimide imine, polyether imide, polysulfide, polyvinylidene, Polyphenylene and polyphenyl ether; polyurethane (PU); epoxy resin; polyolefin (such as polypropylene, polymethylpentene and cycloolefin); cellulose; polysiloxane and Other silicon-containing polymers (such as polysilsesquioxane and polysiloxane); polyvinyl chloride (PVC); polyacetate; polynorbornene; synthetic rubber (such as ethylene-propylene rubber (EPR) , Styrene-butadiene rubber (SBR), ethylene-Propylene-Diene Monomer (EPDM); and fluoropolymers (for example, polyvinylidene fluoride, polytetrafluoroethylene (TFE) or Polyhexafluoropropylene); copolymers of fluoro-olefins and hydrocarbon olefins, etc. In other embodiments, silica, mullite, alumina, SiC, carbon fiber, MgO-Al ₂ O ₃ -SiO _2. Inorganic materials such as Al ₂ O ₃ -SiO ₂ or MgO-Al ₂ O ₃ -SiO ₂ -Li ₂ O. In some embodiments of the present invention, the film layer 130 is formed of an insulating material. In part of the present invention In an embodiment, the film layer 130 may be formed by spin coating, spray coating, printing, etc. In some embodiments, the thickness of the film layer 130 is approximately 20 nanometers to 10 microns, or 50 nanometers to 200 nanometers, or 30 nanometers. To 100 nanometers, for example, the thickness of the film layer 130 can be approximately 90 nanometers or 100 nanometers.

In addition, similar to the foregoing, the film layer 130 can form a composite structure with a metal nanowire (such as a touch sensing electrode TE) to have certain specific chemical, mechanical, and optical properties, such as providing a metal nanowire and a substrate 110 Adhesion, or better physical mechanical strength, so the film layer 130 can also be called a matrix. It is worth noting that the drawings in this article draw the film layer 130 and the touch sensing electrode TE as different layers, but the polymer used to make the film layer 130 can penetrate into the metal before being cured or in a pre-cured state. The filler is formed between the nanowires. When the polymer is cured, the metal nanowires will be embedded in the film layer 130. That is, the present invention does not specifically limit the film layer 130 and the metal nanowire layer NWL (such as contact Control the structure between the sensing electrodes TE). It is worth noting that the film layer 130 or the protective layer can be applied to the embodiment of the present disclosure, and is not limited to the embodiment shown in FIG. 7B.

Fig. 9 shows the double-sided touch panel manufactured in the embodiment of the present invention, which can be manufactured in the following manner: first, a substrate 110 is provided, on which a pre-defined peripheral area PA and a display area VA are provided. Next, a metal nanowire layer NWL is formed on the first and second opposite surfaces (such as the upper surface and the lower surface) of the substrate 110, respectively, on the peripheral area PA and the display area VA of the first and second surfaces; then the metal layer ML is formed , And the metal layer ML is located in the peripheral area PA; then a patterned layer PL is formed on the metal nanowire layer NWL and the metal layer ML on the first and second surfaces respectively; then the first and second surfaces are performed according to the patterned layer PL It is patterned to form the first touch sensing electrode TE1, the second touch sensing electrode TE2 and the peripheral lead 120 on the first and second surfaces, and the peripheral lead 120 will cover the first intermediate layer M1. Embodiments of the present invention may further include removing the patterned layer PL. For brevity of the drawings, Fig. 9 does not show the first intermediate layer M1.

The specific implementation of this step can refer to the foregoing. For example, the etching solution proposed in the present invention can simultaneously target material layers in different areas, such as metal/nanosilver in the peripheral area PA and nanosilver in the display area VA to etch out lines. And it has good linearity and CD bias control, and no material remains in the non-conductive area 136. In addition, this embodiment can directly perform the double-sided etching process, which is beneficial to simplify the process and improve the yield.

Please refer to Figures 9 and 9A, the first touch sensing electrode TE1 is formed on one side of the substrate 110 (such as the upper surface), and the second touch sensing electrode TE2 is formed on the other side of the substrate 110 (the lower surface), so that A touch sensing electrode TE1 and a second touch sensing electrode TE2 are electrically insulated from each other; and a peripheral lead 120 electrically connected to the first touch sensing electrode TE1 covers the first intermediate layer M1; for the same reason, it is connected to the second The peripheral lead 120 of the touch sensing electrode TE2 covers its corresponding first intermediate layer M1. The first touch sensing electrode TE1 is a plurality of elongated electrodes arranged along the first direction D1, and the second touch sensing electrode TE2 is a plurality of elongated electrodes arranged along the second direction D2. As shown in the figure, the elongated touch sensing electrode TE1 and the elongated touch sensing electrode TE2 extend in different directions, but are intersected with each other. The first touch sensing electrode TE1 and the second touch sensing electrode TE2 can be used to transmit control signals and receive touch sensing signals, respectively. From then on, the touch position can be obtained by detecting the signal change (for example, the capacitance change) between the first touch sensing electrode TE1 and the second touch sensing electrode TE2. With this configuration, the user can perform touch sensing at various points on the substrate 110. The touch panel 100 of this embodiment may further include a film layer 130, which covers the touch panel 100 in a comprehensive manner, that is, the film layer 130 is provided on both the upper and lower sides of the substrate 110 and covers the first touch sensing electrode On the TE1, the second touch sensing electrode TE2 and the peripheral leads 120, the film layer 130 also covers and fills the upper and lower non-conductive areas 136 of the substrate 110.

Similar to the foregoing embodiment, any surface (such as the upper surface or the lower surface) of the substrate 110 may further include a mark 140 and a second intermediate layer M2.

FIG. 10 is a schematic top view of a touch panel 100 according to some embodiments of the present invention. This embodiment is similar to the previous embodiment. The main difference is that: in this embodiment, the touch panel 100 further includes a mask wire 160 disposed in the peripheral area PA, which mainly surrounds the touch sensing electrode TE and the peripheral lead 120, and The shield wire 160 extends to the bonding area BA and is electrically connected to the ground terminal on the flexible circuit board 170. Therefore, the shield wire 160 can shield or eliminate signal interference or electrostatic discharge (ESD) protection, especially A small current change caused by a human hand touching the connecting wires around the touch device.

According to the aforementioned manufacturing method, the mask wire 160 and the peripheral lead 120 can be made of the same metal layer ML (that is, the two are the same metal material, such as the aforementioned electroless copper plating layer), and metal nanometers are stacked on them. The wire layer NWL (or the third covering layer) is made after etching according to the pattern of the patterned layer PL. It can also be understood that the mask wire 160 includes the metal nanowire layer NWL (or its combination with the film layer). For the composite structure layer of the composite layer) and the metal layer ML, refer to the description of the embodiment shown in FIG. 2A and FIG. 2B for details. In addition, in another embodiment, the mask wire 160 and the peripheral lead 120 can be made of the same metal layer ML (that is, the two are the same metal material, such as the aforementioned electroless copper plating layer), and follow the patterning The pattern of the layer PL is etched, and then the patterned layer PL is removed. Therefore, it can also be understood that the mask wire 160 is a composite of the metal nanowire layer NWL (or the third intermediate layer) and the metal layer ML The structure layer can also be understood as the mask wire 160 is a composite structure layer including a metal nanowire layer NWL (or a composite layer with a film layer) and a metal layer ML. For details, please refer to Figures 7A and 7B. Description of Examples.

FIG. 11 shows another embodiment of the single-sided touch panel 100 of the present invention, which is a single-sided bridge touch panel. The difference between this embodiment and the above-mentioned embodiment is at least that the transparent conductive layer (ie, the metal nanowire layer NWL) formed on the substrate 110 after the above-mentioned patterning step formed the touch sensing electrode TE may include: The first touch sensing electrodes TE1 arranged in the direction D1, the second touch sensing electrodes TE2 arranged in the second direction D2, and the connecting electrodes CE electrically connected to two adjacent first touch sensing electrodes TE1; in addition, an insulating block 164 can be disposed on the connecting electrode CE, for example, silicon dioxide is used to form an insulating block 164; and the bridging wire 162 is further disposed on the insulating block 164, for example, a material such as copper/ITO/metal nanowire is used to form the bridging wire 162, and the The bridge wire 162 is connected to two adjacent second touch sensing electrodes TE2 in the second direction D2, and the insulating block 164 is located between the connection electrode CE and the bridge wire 162 to electrically isolate the connection electrode CE and the bridge wire 162. The touch electrodes in the first direction D1 and the second direction D2 are electrically isolated from each other. For the specific method, please refer to the previous article, so I won't repeat it here. Similar to the above embodiment, the peripheral lead 120 is made of a metal layer ML (for example, the aforementioned electroless copper plating layer), on which a metal nanowire layer NWL is laminated, and both are formed using the aforementioned etching solution; similar The first touch sensing electrode TE1 and the second touch sensing electrode TE2 are formed using the aforementioned etching solution, and the peripheral lead 120 is connected to the first touch sensing electrode TE1 and the second touch sensing electrode TE2, respectively.

The touch panel of the embodiment of the present invention can be assembled with other electronic devices, such as a display with touch function. For example, the substrate 110 can be bonded to a display element, such as a liquid crystal display element or an organic light emitting diode (OLED) display element, Optical glue or other similar adhesives can be used for bonding between the two; and the touch sensing electrode TE can also be bonded with the outer cover layer (such as protective glass) by optical glue. The touch panel of the embodiment of the present invention can be applied to electronic devices such as portable phones, tablet computers, and notebook computers.

In some embodiments, the touch panel 100 described herein can be manufactured through a roll to roll (Roll to Roll) process. The roll to roll (Roll to Roll) coating process uses conventional equipment and can be fully automated, which can be significantly Reduce the cost of manufacturing touch panels. The specific process of roll-to-roll coating is as follows: First, select a flexible substrate 110, and install the roll-shaped substrate 110 between two rollers, and use a motor to drive the rollers so that the substrate 110 can run between the two rollers. Continuity of the manufacturing process on the moving path. For example, using a plating tank to deposit the metal layer ML, using a storage tank, a spray device, a brushing device, and the like to deposit a metal nanowire-containing slurry on the surface of the substrate 110 and apply a curing step to form Metal nanowire layer NWL; forming a patterned patterned layer PL (for example, using the aforementioned flexographic printing method) on the metal layer ML and/or metal nanowire layer NWL; patterning by etching grooves or spraying etching solutions, etc. step. Subsequently, the completed touch panel 100 is rolled out by the roller at the end of the production line to form a touch sensor tape.

The touch sensor tape of this embodiment may also include a film layer 130, which is a comprehensive covering of the uncut touch panel 100 on the touch sensor roll, that is to say, the film layer 130 may cover the touch sensor. The uncut touch panels 100 on the control sensor roll are cut and separated into individual touch panels 100.

In some embodiments of the present invention, the substrate 110 is preferably a transparent substrate. Specifically, it may be a rigid transparent substrate or a flexible transparent substrate. The material may be selected from glass and acrylic (polymethylmethacrylate; PMMA). , Polyvinyl Chloride (PVC), Polypropylene (PP), Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), Transparent materials such as polycarbonate (PC), polystyrene (PS), Cyclo Olefin Polymers (COP), and cycloolefin copolymer (COC).

The roll-to-roll production line can adjust the sequence of multiple coating steps along the movement path of the substrate as required or can incorporate any number of additional platforms as required. For example, in order to achieve an appropriate post-processing process, pressure rollers or plasma equipment can be installed in the production line.

In some embodiments, the formed metal nanowires can be further subjected to post-processing to increase their conductivity. The post-processing can include process steps such as heating, plasma, corona discharge, UV ozone, pressure, or a combination of the above processes. . For example, after the step of curing to form the metal nanowire layer NWL, a roller can be used to apply pressure thereon. In one embodiment, 50 to 3400 psi can be applied to the metal nanowire layer NWL through one or more rollers. The pressure may preferably be 100 to 1000 psi, 200 to 800 psi, or 300 to 500 psi; and the step of applying pressure is preferably implemented before the step of coating the film layer 130. In some embodiments, heating and pressure post-processing can be performed at the same time; in detail, the formed metal nanowire can be heated through one or more rollers as described above and heated at the same time, such as those applied by rollers. The pressure is 10 to 500 psi, preferably 40 to 100 psi; while heating the roller to between about 70°C and 200°C, preferably between about 100°C and 175°C, it can improve the conductivity of the metal nanowire Spend. In some embodiments, the metal nanowire can preferably be exposed to a reducing agent for post-treatment. For example, a metal nanowire composed of silver nanowires can preferably be exposed to a silver reducing agent for post-treatment. The silver reducing agent includes Borohydrides, such as sodium borohydride; boron nitrogen compounds, such as dimethylaminoborane (DMAB); or gaseous reducing agents, such as hydrogen (H ₂ ). The exposure time is about 10 seconds to about 30 minutes, preferably about 1 minute to about 10 minutes.

The other details of this embodiment are roughly as described in the foregoing embodiment, and will not be repeated here.

The structures of different embodiments of the present invention can be mutually cited, and are not limited to the foregoing specific embodiments.

In some embodiments of the present invention, the metal nanowire layer NWL or/and the metal layer ML are etched at one time by the etching solution, so the error space reserved in the alignment process can be avoided, so the width of the peripheral area can be effectively reduced .

In some embodiments of the present invention, the two-layer structure (for example, the upper layer is the metal nanowire layer NWL and the lower layer is the metal layer ML, or the upper layer is the metal layer ML and the lower layer is the metal nanowire layer NWL) can be etched at one time By making the peripheral leads and/or marks of the peripheral area, the error space reserved in the alignment process can be avoided, so the width of the peripheral area can be effectively reduced.

In some embodiments of the present invention, the copper layer and the silver nanowire layer are etched with the above-mentioned etching solution. As shown in FIG. 12, after 60 seconds of etching, the CD bias is 3um.

Although the present invention has been disclosed in various embodiments as above, it is not intended to limit the present invention. Anyone familiar with the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be subject to the scope defined by the scope of the attached patent application.

100: Touch panel 110: substrate 120: Peripheral lead 122: side 124: upper surface 140: mark 142: Side 144: upper surface 130: Membrane 136: Non-conductive area 160: mask wire 170: flexible circuit board ML: Metal layer NWL: Metal Nanowire Layer PL: Patterned layer M1: The first middle layer M1L: side M2: The second middle layer M2L: side VA: Display area PA: Peripheral area BA: junction area TE1: The first touch sensing electrode TE2: second touch sensing electrode TE: Touch sensing electrode C1: First cover C1L: side C2: second cover C2L: side D1: First direction D2: second direction

1A to 1C are schematic diagrams of steps of a manufacturing method of a touch panel according to some embodiments of the present invention. FIG. 2 is a schematic top view of a touch panel according to some embodiments of the present invention. Fig. 2A is a schematic cross-sectional view taken along the line A-A in Fig. 2. Fig. 2B is a schematic cross-sectional view taken along the line B-B in Fig. 2. FIG. 3 is a schematic top view of the touch panel and the flexible circuit board after assembly according to some embodiments of the present invention. FIG. 4 is a schematic diagram of a touch panel according to another embodiment of the present invention. FIG. 5 is a schematic top view of a touch panel according to another embodiment of the present invention. Fig. 5A is a schematic cross-sectional view taken along the line A-A in Fig. 5. 6A to 6C are schematic diagrams of steps of a method of manufacturing a touch panel according to some embodiments of the present invention. FIG. 7 is a schematic top view of a touch panel according to another embodiment of the present invention. Fig. 7A is a schematic cross-sectional view taken along the line A-A in Fig. 7. Fig. 7B is a schematic cross-sectional view taken along the line B-B in Fig. 7. FIG. 8 is a schematic diagram of a touch panel according to another embodiment of the present invention. FIG. 9 is a schematic top view of a touch panel according to another embodiment of the present invention. Fig. 9A is a schematic cross-sectional view taken along the line A-A in Fig. 9. FIG. 10 is a schematic top view of a touch panel according to another embodiment of the present invention. FIG. 11 is a schematic top view of a touch panel according to another embodiment of the present invention. Figure 12 is an SEM image after etching according to the present invention. 13A to 13E are schematic diagrams of steps of another manufacturing method of a touch panel according to some embodiments of the present invention.

Domestic deposit information (please note in the order of deposit institution, date and number) none Foreign hosting information (please note in the order of hosting country, institution, date, and number) none

110: substrate

ML: Metal layer

NWL: Metal Nanowire Layer

PL: Patterned layer

Claims (27)

A method for manufacturing a touch panel includes: providing a substrate, wherein the substrate has a display area and a peripheral area; disposing a metal layer and a metal nanowire layer, wherein a first part of the metal nanowire layer is located on the In the display area, a second portion of the metal nanowire layer and the metal layer are located in the peripheral area; and performing a patterning step, wherein the patterning step includes using a metal layer that can etch the metal layer and the metal nanowire layer An etching solution forms the metal layer into a plurality of peripheral leads and simultaneously forms a plurality of etching layers on the second part of the metal nanowire layer, wherein the etching solution includes 0.2-40wt% hydrogen peroxide and 0.2-20wt% acid , 0.1-10wt% metal corrosion inhibitor, 0.1-10wt% stabilizer and the balance solvent. The method of manufacturing a touch panel according to claim 1, wherein the patterning step further comprises using the etching solution to form the first part of the metal nanowire layer into a touch sensing electrode, and the touch sensing electrode is disposed on In the display area of the substrate, the touch sensing electrode is electrically connected to the peripheral leads. The method for manufacturing a touch panel according to claim 1, wherein the metal corrosion inhibitor comprises a nitrogen-containing, sulfur-containing or hydroxyl-containing organic compound with surface activity, mercaptobenzothiazole, benzotriazole and methyl alcohol. At least one of benzotriazole. The method for manufacturing a touch panel according to claim 1, wherein the stabilizer includes ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, and N- At least one of hydroxyethylethylenediaminetriacetic acid and polyacrylamide. The manufacturing method of the touch panel according to claim 1, wherein the arranging the metal layer and the metal nanowire layer includes: arranging the metal layer on the peripheral area; and then arranging the metal nanowire layer on the display Area and the peripheral area, the first part is located in the display area and formed on the substrate, and the second part is located in the peripheral area and formed on the metal layer. The manufacturing method of the touch panel according to claim 5, wherein the arranging the metal layer in the peripheral area includes: forming the metal layer in the peripheral area and the display area; and removing the metal located in the display area Floor. The manufacturing method of the touch panel according to claim 5, wherein the composition of the etching solution includes 1.0-10.0wt% of hydrogen peroxide, 1.0-5.0wt% of acids, 2.0-7.0wt% of metal corrosion inhibitor, 3.0- 8.0wt% stabilizer and the balance solvent. The manufacturing method of the touch panel according to claim 4, wherein the patterning step further comprises using the etching solution to form a plurality of metal layers Mark, the etching layers include a plurality of first coverings and a plurality of second coverings, each of the first coverings is arranged on the corresponding peripheral leads, and each of the second coverings is arranged on the corresponding On those marks. The manufacturing method of the touch panel according to claim 1, wherein the arranging the metal layer and the metal nanowire layer includes: arranging the metal nanowire layer in the display area and the peripheral area; and then arranging the metal Layer in the peripheral area, wherein the metal layer is located on the second part. The manufacturing method of the touch panel according to claim 9, wherein the composition of the etching solution includes 1.0-5.0wt% hydrogen peroxide, 0.1-0.6wt% acids, 2.0-7.0wt% metal corrosion inhibitor, 3.0-5.0wt% 8.0wt% stabilizer and the balance solvent. The method for manufacturing a touch panel according to claim 9, wherein the patterning step further includes using the etching solution to form a plurality of marks on the metal layer, and the etching layers include a plurality of first intermediate layers and a plurality of second intermediate layers. In the intermediate layer, each of the first intermediate layers is arranged between the corresponding peripheral leads and the substrate, and each of the second intermediate layers is arranged between the corresponding marks and the substrate. The manufacturing method of the touch panel according to claim 1, further comprising providing a film layer. The manufacturing method of the touch panel according to claim 1, wherein the manufacturing method is performed on one side or both sides of the substrate. A touch panel manufactured by the manufacturing method of the touch panel according to claim 1. A method for manufacturing a touch panel includes: providing a substrate, wherein the substrate has a display area and a peripheral area; disposing a metal layer and a metal nanowire layer, wherein a first part of the metal nanowire layer is located on the In the display area, a second portion of the metal nanowire layer and the metal layer are located in the peripheral area; and performing a patterning step, wherein the patterning step includes etching the metal nanowire layer with an etching solution, Use another etching solution to etch the metal layer to form a plurality of peripheral leads on the metal layer and simultaneously form a plurality of etching layers on the second part of the metal nanowire layer, wherein the etching solution includes 0.01-50wt % Hydrogen peroxide, 0.1-10wt% metal corrosion inhibitor, 0.1-10wt% stabilizer and the balance solvent. The method for manufacturing a touch panel according to claim 15, wherein the patterning step further comprises using the etching solution to form the first part of the metal nanowire layer into a touch sensing electrode, and the touch sensing electrode is disposed on In the display area of the substrate, the touch sensing electrode is electrically connected to the peripheral leads. The method for manufacturing a touch panel according to claim 15, wherein the metal corrosion inhibitor comprises a nitrogen-containing, sulfur-containing or hydroxyl-containing organic compound with surface activity, mercaptobenzothiazole, benzotriazole, and methyl alcohol. At least one of benzotriazole. The method for manufacturing a touch panel according to claim 15, wherein the stabilizer includes ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, and N- At least one of hydroxyethylethylenediaminetriacetic acid and polyacrylamide. The manufacturing method of the touch panel according to claim 15, wherein the arranging the metal layer and the metal nanowire layer includes: arranging the metal layer on the peripheral area; and then arranging the metal nanowire layer on the display Area and the peripheral area, the first part is located in the display area and formed on the substrate, and the second part is located in the peripheral area and formed on the metal layer. The manufacturing method of the touch panel according to claim 19, wherein the arranging the metal layer in the peripheral area includes: forming the metal layer in the peripheral area and the display area; and removing the metal located in the display area Floor. The manufacturing method of the touch panel as described in claim 18, The patterning step further includes using the etching solution to form a plurality of marks on the metal layer, and the etching layers include a plurality of first coverings and a plurality of second coverings, and each of the first coverings is arranged at a corresponding On the peripheral leads, each of the second coverings is arranged on the corresponding marks. The manufacturing method of the touch panel according to claim 15, wherein the arranging the metal layer and the metal nanowire layer includes: arranging the metal nanowire layer in the display area and the peripheral area; and then arranging the metal Layer in the peripheral area, wherein the metal layer is located on the second part. The manufacturing method of the touch panel according to claim 22, wherein the arranging the metal layer in the peripheral area includes: forming the metal layer in the peripheral area and the display area; and removing the metal located in the display area Floor. The method for manufacturing a touch panel according to claim 22, wherein the patterning step further includes using the etching solution to form a plurality of marks on the metal layer, and the etching layers include a plurality of first intermediate layers and a plurality of second intermediate layers. In the intermediate layer, each of the first intermediate layers is arranged between the corresponding peripheral leads and the substrate, and each of the second intermediate layers is arranged between the corresponding marks and the substrate. The manufacturing method of the touch panel as described in claim 15, It also includes the provision of a film layer. The manufacturing method of the touch panel according to claim 15, wherein the manufacturing method is performed on one side or both sides of the substrate. A touch panel manufactured by the manufacturing method of a touch panel according to claim 15.

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