TWI749533B - Metal mask - Google Patents
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- TWI749533B TWI749533B TW109113610A TW109113610A TWI749533B TW I749533 B TWI749533 B TW I749533B TW 109113610 A TW109113610 A TW 109113610A TW 109113610 A TW109113610 A TW 109113610A TW I749533 B TWI749533 B TW I749533B
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Abstract
一種金屬掩膜,其係於低熱膨脹係數薄形掩膜本體中形成多個鍍膜圖案成形構造,掩膜本體之預定區域形成狹縫圖案構造,狹縫圖案構造之多個開口狹縫分別包括有蝕刻成形之第一凹穴部與連通第一凹穴部之雷射切割成形的狹縫圖案成形部,第一凹穴部之斜向側壁之斜角角度範圍為35 0~85 0,第一凹穴部深度小於或等於掩膜本體厚度的4/5倍,具有垂直周壁的狹縫圖案成形部深度大於或等於掩膜本體的厚度的1/5倍,藉由先蝕刻、後雷射切射的兩階段加工,搭配第一凹穴部與狹縫圖案成形部的深度尺寸控制,使其易於控制與製作高分辨率的開口狹縫形狀,縮短雷射光束在切割狹縫圖案成形部之加工時間,有效地克服雷射切割之高溫而變形,提高金屬掩膜的產品良率。 A metal mask is formed in a thin mask body with a low thermal expansion coefficient to form a plurality of coating pattern forming structures, a predetermined area of the mask body forms a slit pattern structure, and a plurality of opening slits of the slit pattern structure respectively include a first recess portion communicates with the slit pattern forming portion of the first laser cavity forming portion of cut shaped etch, oblique sidewalls of the first recess portion of the bevel angle range of 350 ~ 850, a first The depth of the cavity is less than or equal to 4/5 times the thickness of the mask body, and the depth of the slit pattern forming part with vertical peripheral walls is greater than or equal to 1/5 times the thickness of the mask body, by first etching and then laser cutting The two-stage processing of the laser beam, combined with the depth size control of the first cavity part and the slit pattern forming part, makes it easy to control and produce high-resolution opening slit shapes, and shorten the laser beam in the cutting slit pattern forming part. The processing time effectively overcomes the deformation caused by the high temperature of laser cutting, and improves the product yield of the metal mask.
Description
本發明係關於一種金屬掩膜,尤指一種應用於有機發光二極體(Organic Light-Emitting Diode, OLED)鍍膜製程中形成鍍膜層之共通用性金屬掩膜 (common/open mask, CMM),且具有極精細狹縫圖案構造之金屬掩膜。The present invention relates to a metal mask, in particular to a common/open mask (CMM) used in the organic light-emitting diode (Organic Light-Emitting Diode, OLED) coating process to form a coating layer, And has a metal mask with a very fine slit pattern structure.
智慧型手機及各種顯示幕之屏下攝影頭技術已經逐步被商品化,並實現智慧型手機及各種顯示幕呈全屏化之目標。目前應用於有機發光二極體(以下簡稱OLED)顯示幕製造領域之屏下攝影頭技術中,壓縮編碼孔徑(coded aperture camera)技術或是局部半穿透顯示屏為已知之重要技術。但是OLED顯示幕在實現全屏化時,必須兼顧OLED顯示幕在前置攝影鏡頭功能啟動時,OLED顯示幕外觀的一致性,同時前置攝影鏡頭也需獲得足夠的光通量,才能達到最低分辨率的編碼圖像,因此,具有極精細狹縫圖案的掩膜為此屏下攝影編碼圖像技術或光學成像的解決方案。The under-screen camera technology of smart phones and various display screens has been gradually commercialized, and the goal of making smart phones and various display screens full-screen has been realized. Currently used in the field of under-screen camera technology in the field of organic light-emitting diode (OLED) display screen manufacturing, the coded aperture camera technology or the partial semi-transmissive display is an important technology known. However, when the OLED display screen is full-screen, it must take into account the consistency of the appearance of the OLED display screen when the front camera lens function is activated. At the same time, the front camera lens also needs to obtain sufficient luminous flux to achieve the lowest resolution. Coded image, therefore, a mask with extremely fine slit patterns is a solution for this under-screen photography coded image technology or optical imaging.
為能在OLED屏下攝影技術領域中實現該編碼圖像技術達到全屏顯示的目的,目前主要係利用OLED鍍膜製程中蒸鍍膜層藉由圖形化陰極極精細金屬掩膜(Fine Metal Mask, FMM)的設計來達成,或是在共通性金屬掩膜(CMM)中增加一特定之狹縫圖案構造,藉由極精細的狹縫圖案構造,搭配透明及或非透明鍍膜的製程來達到入射光可穿透該區域而在成像系統上成像、重新解碼。In order to achieve the purpose of full-screen display by encoding image technology in the field of photography under OLED screens, currently the vapor-deposited film layer in the OLED coating process is mainly used through the patterned cathode ultra-fine metal mask (Fine Metal Mask, FMM) Design to achieve, or add a specific slit pattern structure in the common metal mask (CMM), through the very fine slit pattern structure, with transparent and or non-transparent coating process to achieve the incident light Penetrate the area to image on the imaging system and re-decode.
目前已知蒸鍍膜層利用圖形化陰極精细金屬掩膜(FMM)之技術中,因會縮短圖形化陰極的使用壽命,且增加製程工序,而有製造成本上升、產能下降的缺點。至於現有的共通性金屬掩膜(CMM)在形成該精細的狹縫圖案構造時,一般皆係利用黃光微影蝕刻手段在薄形的金屬板材中來製作。如圖7所示,其係在薄形金屬板材30中,利用兩面黃光微影蝕刻形成相連通之第一凹穴311與第二凹穴312構成的開口狹縫31,並以第一凹穴311與第二凹穴312連接部位作為鍍膜成形部。由於黃光微影蝕刻技手段在現有技術中雖能達成相當精密度,但是,就狹縫圖案構造之極為精細的尺度與形狀要求標準而言,黃光微影蝕刻手段在薄形金屬板材中製作狹縫圖案構造不易達成具備高分辨率之特定尖角的開口狹縫形狀,且品質控制困難,有產品良率偏低之問題。Currently, the technology of using a patterned cathode fine metal mask (FMM) for the vapor-deposited film layer will shorten the service life of the patterned cathode and increase the manufacturing process, which has the disadvantages of increased manufacturing cost and decreased productivity. As for the existing common metal mask (CMM), when the fine slit pattern structure is formed, it is generally manufactured in a thin metal plate by means of yellow light lithography etching. As shown in FIG. 7, it is in a
再者,雷射切割手段也是一種能在薄形金屬板材中切割形成具有精細尺寸與形狀之狹縫圖案構造的現有技術,惟雷射切割手段利用高能量雷射光在薄形金屬板材切割狹縫圖案構造時,易因高能量雷射光中投射在薄形金屬板材的切割時間偏長而因高溫產生變形,故於製作狹縫圖案構造時,仍有不易達成具備高分辨率之特定尖角的開口狹縫形狀,且有產品良率偏低之問題。Furthermore, the laser cutting method is also an existing technology that can cut the thin metal sheet to form a slit pattern structure with fine size and shape. However, the laser cutting method uses high-energy laser light to cut the slits on the thin metal sheet. In the pattern structure, the cutting time of the high-energy laser light projected on the thin metal plate is prolonged and the deformation is caused by the high temperature. Therefore, it is still difficult to achieve the specific sharp corner with high resolution when making the slit pattern structure. The shape of the opening is slit, and there is a problem of low product yield.
本發明之目的在於提供一種金屬掩膜,解決現有OLED顯示幕鍍膜製程中使用之掩膜難以控制其對應極精細狹縫圖案之狹縫開口之成形部形狀與尺寸等精度之問題。The purpose of the present invention is to provide a metal mask to solve the problem that the mask used in the existing OLED display screen coating process is difficult to control the accuracy of the shape and size of the slit opening corresponding to the extremely fine slit pattern.
為了達成前述目的,本發明所提出之金屬掩膜係包括: 一低熱膨脹係數的掩膜本體,其厚度為15μm~150μm,該掩膜本體之厚度方向的相對兩側面分別為一第一側面與一第二側面,且界定有平行於該第一側面與該第二側面之一基準平面; 多個鍍膜圖案成形構造,係形成於該掩膜本體中,且每一所述鍍膜圖案成形構造包括一圖案成形孔,所述圖案成形孔係自該掩膜本體之第一側面貫穿至第二側面;以及 一狹縫圖案構造,其成形於該掩膜本體之預定區域,所述狹縫圖案構造包括多個開口狹縫,所述開口狹縫自該掩膜本體之第一側面貫穿至第二側面,且所述開口狹縫包括蝕刻成形之一第一凹穴部與雷射切割成形的一狹縫圖案成形部,所述第一凹穴部係自該掩膜本體的第一側面朝第二側面方向尺寸遞減的斜狀凹穴,該第一凹穴部周邊之斜向側壁之參考斜面相對於該基準平面之斜角的角度區間範圍為35 0~85 0,該第一凹穴部之深度尺寸範圍係大於0且小於或等於該掩膜本體的厚度的4/5倍,該狹縫圖案成形部自該第一凹穴部之小徑端朝該第二側面方向延伸,且該掩膜本體之側壁垂直於該基準平面,該狹縫圖案成形部之深度尺寸範圍係小於該掩膜本體的厚度且大於或等於該掩膜本體的厚度的1/5倍。 In order to achieve the foregoing objective, the metal mask proposed by the present invention includes: a mask body with a low coefficient of thermal expansion, the thickness of which is 15 μm to 150 μm, and the two opposite sides in the thickness direction of the mask body are a first side surface and a first side surface. A second side surface defining a reference plane parallel to the first side surface and the second side surface; a plurality of coating pattern forming structures are formed in the mask body, and each of the coating pattern forming structures includes A pattern forming hole which penetrates from the first side to the second side of the mask body; and a slit pattern structure formed in a predetermined area of the mask body, the slit pattern structure It includes a plurality of opening slits that penetrate from the first side surface to the second side surface of the mask body, and the opening slits include a first cavity portion formed by etching and a portion formed by laser cutting. A slit pattern forming part, the first recess part is an oblique recess whose size decreases from the first side surface of the mask body to the second side surface, and the reference slope of the oblique side wall around the first recess part an oblique angle relative to the reference plane of the angular interval in the range of 350 - 850, the depth dimension of the pocket portion of the system of the first range is greater than 0 and less than or equal to 4/5 times the thickness of the mask body, the slots The slit pattern forming portion extends from the small-diameter end of the first cavity portion toward the second side surface, and the side wall of the mask body is perpendicular to the reference plane, and the depth dimension range of the slit pattern forming portion is smaller than that of the mask. The thickness of the film body is greater than or equal to 1/5 times the thickness of the mask body.
前述金屬掩膜之構造發明,其應用於具備屏下攝影之OLED顯示幕之鍍膜製程使用之共通性金屬掩膜(CMM)時,利用薄形的掩膜本體預定區域之狹縫圖案構造的每一開口狹縫包括蝕刻成形之一第一凹穴部與雷射切割成形的一狹縫圖案成形部,並設定該第一凹穴部之深度尺寸範圍大於0且小於或等於該掩膜本體的厚度的4/5倍,連通第一凹穴部之小徑端之狹縫圖案成形部之深度尺寸範圍小於該掩膜本體的厚度且大於或等於該掩膜本體的厚度的1/5倍等,藉此,使該狹縫圖案構造的每一開口狹縫能以蝕刻手段先完成開口狹縫的第一階段成形,然後以雷射切割法以獲得準確的狹縫圖案成形部的形狀與尺寸,並藉由先蝕刻而後雷射切射之兩階段加工方式,搭配第一凹穴部與狹縫圖案成形部兩者之深度尺寸控制,能達成具備高分辨率之特定尖角的開口狹縫形狀,縮短高能量雷射光束在薄形掩膜本體的切割狹縫圖案成形部之加工時間,有效地克服雷射切割之高溫而產生變形之情形,使該金屬掩膜能易於控制與製作極精細的狹縫圖案,改善金屬掩膜之產品良率。The aforementioned metal mask construction invention is applied to a common metal mask (CMM) used in the coating process of an OLED display screen with under-screen photography, using a thin mask body for each slit pattern structure in a predetermined area An opening slit includes a first cavity portion formed by etching and a pattern forming portion formed by laser cutting, and the depth size range of the first cavity portion is set to be greater than 0 and less than or equal to that of the mask body 4/5 times the thickness, the depth size range of the slit pattern forming part connected to the small diameter end of the first cavity part is smaller than the thickness of the mask body and greater than or equal to 1/5 times the thickness of the mask body, etc. As a result, each opening slit of the slit pattern structure can be formed by etching the first stage of the opening slit, and then laser cutting is used to obtain the accurate shape and size of the slit pattern forming part , And through the two-stage processing method of etching first and then laser cutting, combined with the depth size control of the first cavity part and the slit pattern forming part, it can achieve a specific sharp-angled opening slit with high resolution Shape, shorten the processing time of the high-energy laser beam in the cutting slit pattern forming part of the thin mask body, effectively overcome the deformation caused by the high temperature of the laser cutting, and make the metal mask easy to control and make Fine slit patterns improve the product yield of metal masks.
再者,本發明金屬掩膜之構造中,因無需增加額外的鍍層,可提升金屬掩膜的壽命,更進而可克服0.1mm板材厚度無法滿足精細狹縫尺寸精度要求及低分辨率的缺點。Furthermore, in the structure of the metal mask of the present invention, since no additional plating layer is required, the life of the metal mask can be increased, and further, the disadvantages of the 0.1mm sheet thickness that cannot meet the fine slit dimensional accuracy requirements and low resolution can be overcome.
本發明金屬掩膜還可進一步令所述開口狹縫包括一蝕刻成形之一第二凹穴部,該第二凹穴部係自該掩膜本體的第二側面朝第一側面方向尺寸遞減的斜狀凹穴,該狹縫圖案成形部之兩端分別連接於該第一凹穴部之小徑端與該第二凹穴部之小徑端,藉由第二凹穴部位於掩膜本體的第二側面,使金屬掩膜在鍍膜製程中,能夠有效地避免鍍膜陰影效應,進而能控制微精細尺寸的狹縫圖案的鍍膜形狀與尺寸的品質。The metal mask of the present invention can further enable the opening slit to include an etched and formed second cavity portion, the second cavity portion being from the second side surface of the mask body to the first side surface with decreasing size Oblique recesses, both ends of the slit pattern forming portion are respectively connected to the small diameter end of the first recess portion and the small diameter end of the second recess portion, and the second recess portion is located on the mask body The second side of the metal mask can effectively avoid the shadow effect of the coating during the coating process, thereby controlling the quality of the coating shape and size of the micro-fine slit pattern.
以下配合圖式及本發明之較佳實施例,進一步說明本發明為了達成預定發明目的所採取的技術手段。In the following, in conjunction with the drawings and preferred embodiments of the present invention, the technical means adopted by the present invention to achieve the intended purpose of the invention are further described.
本發明所提出之金屬掩膜係作為OLED鍍膜製程中使用之共通性金屬掩膜(CMM),如圖1至圖4所示,本發明所提出之金屬掩膜之數種較佳實施例,該金屬掩膜係具有低膨脹系數(coefficient of thermal expansion,CTE)之金屬材料製成的薄片形平板物件,所述低膨脹系數之金屬材料係指常溫下平均膨脹系數低於2.5×10
-6/℃的金屬材料,如:鐵鎳合金(Fe-36Ni,Invar)等材料。該金屬掩膜包括一掩膜本體10、多個鍍膜圖案成形構造以及一狹縫圖案構造20A、20B。
The metal mask proposed in the present invention is used as a common metal mask (CMM) used in the OLED coating process. As shown in FIG. 1 to FIG. 4, several preferred embodiments of the metal mask proposed in the present invention are: The metal mask is a sheet-shaped flat object made of a metal material with a low coefficient of thermal expansion (CTE). The metal material with a low coefficient of thermal expansion means that the average coefficient of expansion at room temperature is lower than 2.5×10 -6 /℃ metal materials, such as: iron-nickel alloy (Fe-36Ni, Invar) and other materials. The metal mask includes a
如圖3、圖4所示,該掩膜本體10的厚度H尺寸範圍為15μm~150μm,該掩膜本體10相對兩側分別為一第一側面101與一第二側面102,且該掩膜本體10界定有一基準平面100,該基準平面100實質上平行於第一側面101與第二側面102。As shown in FIGS. 3 and 4, the thickness H of the
多個所述鍍膜圖案成形構造分布成形於該掩膜本體中(圖未示),所述鍍膜圖案成形構造之形狀係依據金屬掩膜於鍍膜製程中預定形成的圖案鍍膜的形狀而設定,基本上,每一鍍膜圖案成形構造包括一圖案成形孔,所述圖案成形孔係自該掩膜本體的第一側面貫通至第二側面。前述鍍膜圖案成形構造係屬現有技術,於此不再贅述。A plurality of the coating pattern forming structures are distributed and formed in the mask body (not shown), and the shape of the coating pattern forming structure is set according to the shape of the pattern coating that the metal mask is to be formed in the coating process, basically Above, each coating pattern forming structure includes a pattern forming hole, which penetrates from the first side surface to the second side surface of the mask body. The aforementioned coating pattern forming structure belongs to the prior art and will not be repeated here.
如圖1及圖2所示,所述狹縫圖案構造20A、20B係成形於該掩膜本體10之預定區域,所述預定區域係指該掩膜本體10之預定的局部區域或是特定的區域,所述狹縫圖案構造20A、20B之形狀係依據金屬掩膜於鍍膜製程中預定形成的開口狹縫鍍膜的形狀而設定,且所述開口狹縫鍍膜的形狀係對應於壓縮編碼孔徑(coded aperture camera)技術所設定之編碼圖像。於圖1及圖2所示較佳實施例中,所述狹縫圖案構造20A、20B包括多個開口狹縫21A、21B,所述開口狹縫21A、21B之形狀分別為弧形、十字形等狹縫圖案形狀。需陳明的是,所述開口狹縫之形狀不以前述之形狀為限。As shown in FIGS. 1 and 2, the
如圖3所示之較佳實施例,所述開口狹縫21C係自該掩膜本體10的第一側面101貫通至第二側面102,所述開口狹縫21C包括一第一凹穴部22C與一狹縫圖案成形部23C,第一凹穴部22C係蝕刻成形於該掩膜本體10中,且第一凹穴部22C形成自該掩膜本體10的第一側面101朝第二側面102方向由外向內尺寸遞減的斜狀凹穴,其中,第一凹穴部22C位於掩膜本體10的第一側面101之一端為一大徑端,第一凹穴部22C相對於該大徑端之另一端為一小徑端。該狹縫圖案成形部23C係雷射切割成形於該掩膜本體10中,且該狹縫圖案成形部23C自該第一凹穴部22C之小徑端延伸至掩膜本體10的第二側面102,該狹縫圖案成形部23C之周壁230C實質上垂直於該基準平面100。As shown in the preferred embodiment of FIG. 3, the
如圖4所示之另一較佳實施例,所述開口狹縫21D係自該掩膜本體10的第一側面101貫通至第二側面102,所述開口狹縫21D包括一第一凹穴部22D、一第二凹穴部24D與一狹縫圖案成形部23D,第一凹穴部22D與第二凹穴部24D係蝕刻成形於該掩膜本體10中,該狹縫圖案成形部23D係雷射切割成形於該掩膜本體10中且位於第一凹穴部22D與第二凹穴部24D之間而相連通。其中,該第一凹穴部22D形成自該掩膜本體10的第一側面101朝第二側面102方向由外向內尺寸遞減的斜狀凹穴,第一凹穴部22D位於掩膜本體10的第一側面101之一端為一大徑端,第一凹穴部22D相對於該大徑端之另一端為一小徑端;該第二凹穴部24D形成自該掩膜本體10的第二側面102朝第一側面方向由外向內尺寸遞減的斜狀凹穴,第二凹穴部24D位於掩膜本體10的第二側面102之一端為一大徑端,第二凹穴部24D相對於該大徑端之另一端為一小徑端。該狹縫圖案成形部23D連接於第一凹穴部22D之小徑端與第二凹穴部24D之小徑端,該狹縫圖案成形部23D之周壁實質上垂直於該基準平面100。As shown in another preferred embodiment of FIG. 4, the
如圖3及圖4所示,前述中,該第一凹穴部22C、22D周邊之斜向側壁221C、221D界定其連接於大徑端與小徑端為一參考斜面220C、220D,該第一凹穴部22C、22D周邊之斜向側壁221C、221D之參考斜面220C、220D相對於該基準平面100之斜角θ的角度區間範圍為35
0~85
0,該第一凹穴部22C、22D(於厚度方向)的深度尺寸Y範圍係大於0,且小於或等於該掩膜本體10的厚度H的4/5倍,亦即Y=0~(4/5)H。該狹縫圖案成形部23C、23D(於厚度方向)的深度尺寸N範圍係小於該掩膜本體10的厚度H且大於或等於該掩膜本體10的厚度H的1/5倍,亦即Y=(1/5)H~H。
As shown in FIGS. 3 and 4, in the foregoing, the
為了實現本發明金屬掩膜,於製造圖3所示較佳實施例的金屬掩膜時,其係取用一可為鐵鎳合金(Fe-36Ni,Invar)或其他低熱膨脹系數的金屬材料之薄形金屬基材10A,該金屬基材10A相對的兩側分別為一第一表面與一第二表面,該金屬基材的厚度約為15μm~150μm。接續施以黃光微影蝕刻步驟,使金屬基材10A的第一表面形成第一凹穴部22C後,移除黃光微影步驟使用之光阻,再以雷射切手段於金屬基材10A中形成連通該第一凹穴部22C之狹縫圖案成形部23C。In order to realize the metal mask of the present invention, when manufacturing the metal mask of the preferred embodiment shown in FIG. 3, it is made of iron-nickel alloy (Fe-36Ni, Invar) or other low thermal expansion coefficient metal materials. The
於製造圖4所示較佳實施例的金屬掩膜時,其同樣取用一可為鐵鎳合金(Fe-36Ni,Invar)或其他低熱膨脹系數的金屬材料之薄形金屬基材10A,該金屬基材10A相對的兩側分別為一第一表面與一第二表面,該金屬基材的厚度約為15μm~150μm。接續施以黃光微影蝕刻步驟,使金屬基材的第一表面形成第一凹穴部22D、於金屬基材10的第二表面形成第二凹穴部24D後,移除黃光微影步驟使用之光阻,再以雷射切割手段於金屬基材10中形成連通該第一凹穴部22D與第二凹穴部24D之狹縫圖案成形部23D。When manufacturing the metal mask of the preferred embodiment shown in FIG. 4, it also uses a
由前述說明可知,本發明金屬掩膜應用於具備屏下攝影之OLED顯示幕之鍍膜製程使用之共通性金屬掩膜(CMM)時,利用薄形的掩膜本體預定區域之狹縫圖案構造的每一開口狹縫包括蝕刻成形之第一凹穴部與雷射切割成形的狹縫圖案成形部,或進一步包括蝕刻成形之第二凹穴部,並設定該第一凹穴部之深度尺寸範圍大於0且小於或等於該掩膜本體的厚度的4/5倍,連通第一凹穴部之小徑端之狹縫圖案成形部之深度尺寸範圍小於該掩膜本體的厚度且大於或等於該掩膜本體的厚度的1/5倍等,藉此,使該狹縫圖案構造的每一開口狹縫能以蝕刻手段先完成形成開口狹縫的第一階段的第一凹穴(或及第二凹穴),然後以雷射切割法以獲得準確的狹縫圖案成形部的形狀與尺寸,並藉由先蝕刻而後雷射切射之兩階段加工方式,搭配第一凹穴部與狹縫圖案成形部兩者之深度尺寸控制,能達成具備高分辨率之特定尖角的開口狹縫形狀,縮短高能量雷射光束在薄形掩膜本體的切割狹縫圖案成形部之加工時間,有效地克服雷射切割之高溫而產生變形之情形,使本發明之金屬掩膜能易於控制與製作極精細的狹縫圖案。From the foregoing description, it can be seen that when the metal mask of the present invention is applied to a common metal mask (CMM) used in the coating process of an OLED display screen with under-screen photography, a thin mask body is constructed with a slit pattern in a predetermined area. Each opening slit includes a first cavity portion formed by etching and a slit pattern forming portion formed by laser cutting, or further includes a second cavity portion formed by etching, and the depth size range of the first cavity portion is set Greater than 0 and less than or equal to 4/5 times the thickness of the mask body, the depth dimension range of the slit pattern forming portion connected to the small diameter end of the first cavity is less than the thickness of the mask body and greater than or equal to 1/5 times the thickness of the mask body, etc., so that each opening slit of the slit pattern structure can be formed by etching the first cavity (or and the first cavity in the first stage of the opening slit). Two cavities), and then laser cutting method to obtain the accurate shape and size of the slit pattern forming part, and through the two-stage processing method of first etching and then laser cutting to match the first cavity part and the slit The depth and size control of both pattern forming parts can achieve a high-resolution and specific sharp-angled opening slit shape, shortening the processing time of the high-energy laser beam in the cutting slit pattern forming part of the thin mask body, which is effective To overcome the deformation caused by the high temperature of laser cutting, the metal mask of the present invention can be easily controlled and made extremely fine slit patterns.
本發明金屬掩膜在其狹縫圖案構造之高精度的形狀與尺寸控制下,使其能在OLED顯示幕鍍膜製程中蒸鍍膜層的共通性金屬掩膜(CMM)中增加特定之狹縫圖案構造,藉由極精細的狹縫圖案構造,搭配透明及或非透明鍍膜的製程來達到入射光可穿透該區域而在成像系統上成像、重新解碼。Under the high-precision shape and size control of the slit pattern structure of the metal mask of the present invention, it can add a specific slit pattern to the common metal mask (CMM) of the vapor-deposited film layer in the OLED display screen coating process Structure, through the very fine slit pattern structure, with transparent and or non-transparent coating process to achieve the incident light can penetrate the area to be imaged and re-decoded on the imaging system.
10:掩膜本體
100:基準平面
101:第一側面
102:第二側面
10A:金屬板材
20A:狹縫圖案構造
20B:狹縫圖案構造
21A:開口狹縫
21B:開口狹縫
21C:開口狹縫
21D:開口狹縫
22C:第一凹穴部
22D:第一凹穴部
220C:參考斜面
220D:參考斜面
221C:斜向側壁
221D:斜向側壁
23C:狹縫圖案成形部
230C:狹縫圖案成形部之周壁
23D:狹縫圖案成形部
24D:第二凹穴部
H:掩膜本體的厚度
Y:第一凹穴部的深度尺寸
N:狹縫圖案成形部的深度尺寸
θ:第一凹穴部周邊之斜向側壁之參考斜面相對於基準平面之斜角
30:金屬板材
31:開口狹縫
311:第一凹穴
312:第二凹穴
10: Mask body
100: Datum plane
101: first side
102:
圖1係本發明金屬掩膜之一較佳實施例的局部平面示意圖。 圖2係本發明金屬掩膜之另一較佳實施例的局部平面示意圖。 圖3本發明金屬掩膜中之開口狹縫之一較佳實施例的剖面示意圖。 圖4本發明金屬掩膜中之開口狹縫之另一較佳實施例的剖面示意圖。 圖5係製作圖3所示開口狹縫較佳實施例之流程圖。 圖6係製作圖4所示開口狹縫較佳實施例之流程圖。 圖7係現有薄形金屬板材利用兩面黃光微影蝕刻形成開口狹縫之平面示意圖。 FIG. 1 is a schematic partial plan view of a preferred embodiment of the metal mask of the present invention. 2 is a partial plan view of another preferred embodiment of the metal mask of the present invention. Fig. 3 is a schematic cross-sectional view of a preferred embodiment of the opening slit in the metal mask of the present invention. Fig. 4 is a schematic cross-sectional view of another preferred embodiment of the opening slit in the metal mask of the present invention. FIG. 5 is a flowchart of a preferred embodiment of making the opening slit shown in FIG. 3. FIG. FIG. 6 is a flowchart of a preferred embodiment of making the opening slit shown in FIG. 4. FIG. Fig. 7 is a schematic plan view of a conventional thin metal sheet using two-sided yellow light photolithography to form openings and slits.
10:掩膜本體
100:基準平面
101:第一側面
102:第二側面
21C:開口狹縫
22C:第一凹穴部
220C:參考斜面
221C:斜向側壁
23C:狹縫圖案成形部
230C:狹縫圖案成形部之周壁
H:掩膜本體的厚度
Y:第一凹穴部的深度尺寸
N:狹縫圖案成形部的深度尺寸
θ:第一凹穴部周邊之斜向側壁之參考斜面相對於基準平面之斜角
10: Mask body
100: Datum plane
101: first side
102:
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