TWI748731B - Chip over current and over temperature protection method - Google Patents

Chip over current and over temperature protection method Download PDF

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TWI748731B
TWI748731B TW109138719A TW109138719A TWI748731B TW I748731 B TWI748731 B TW I748731B TW 109138719 A TW109138719 A TW 109138719A TW 109138719 A TW109138719 A TW 109138719A TW I748731 B TWI748731 B TW I748731B
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current
chip
threshold
temperature
control module
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TW109138719A
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TW202220322A (en
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劉俊欣
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新唐科技股份有限公司
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Priority to CN202011498871.2A priority patent/CN114447875B/en
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02Details
    • H02H3/025Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/093Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current with timing means
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/041Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature additionally responsive to excess current
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current

Abstract

A chip over current and over temperature protection method is disclosed. The current supply is controlled by a control module. The protection method includes detecting an output current of the chip by a current detection module and sensing an operation temperature of the chip by a temperature sensing module. When the output current reaches a current threshold value, the control module maintains the output current at the current threshold value. When the output current is maintained for a current maintain time, the control module stop the current supply to the chip. When the operation temperature is back to a restart threshold value, the control module continuously stop current supply for a close delay time, then restart the current supply to the chip.

Description

晶片過電流及過溫保護方法Chip overcurrent and overtemperature protection method

本發明是關於一種晶片過電流及過溫保護方法,特別是關於一種無須調整過電流門檻值及過溫門檻值即可降低功耗及平均溫度的晶片過電流及過溫保護方法。The invention relates to a chip overcurrent and overtemperature protection method, in particular to a chip overcurrent and overtemperature protection method that can reduce power consumption and average temperature without adjusting the overcurrent threshold and the overtemperature threshold.

在電腦系統或各種電子裝置內部,已設有各種控制晶片、驅動晶片來實現各種控制電路、驅動電路的運作。現今的晶片體積朝向微型化發展,操作的頻率、效能也大幅提升,晶片當中的電路設計或是製作過程中稍有異常,就可能影響晶片的功能,造成晶片內部異常的電流驅動及操作,晶片內的溫度也可能相應的大幅提升。Inside the computer system or various electronic devices, various control chips and drive chips have been installed to realize the operation of various control circuits and drive circuits. Today’s chip volume is developing towards miniaturization, and the frequency and performance of operation have also been greatly improved. A slight abnormality in the circuit design or production process of the chip may affect the function of the chip and cause abnormal current drive and operation inside the chip. The temperature inside may also increase substantially accordingly.

現有的晶片會設置過電流保護或過溫保護的機制,在內部電流達到臨界值時,控制電流以避免店流量持續升高,直到異常排除而回復到正常工作電流。過溫保護則是在溫度達到臨界值時,關閉電路或啟動降溫裝置來避免晶片溫度持續上升。但在這些保護機制下,過電流及過溫的臨界值往往是預先設定的固定值,難以依據晶片需求調整,造成在保護晶片的過程中,消耗過多的功耗或是過高的溫度,增加晶片損毀的風險。The existing chip will be equipped with an over-current protection or over-temperature protection mechanism. When the internal current reaches a critical value, the current is controlled to prevent the store flow from continuously increasing until the abnormality is eliminated and the normal operating current is restored. Over-temperature protection is to close the circuit or activate the cooling device when the temperature reaches a critical value to prevent the wafer temperature from rising continuously. However, under these protection mechanisms, the critical values of overcurrent and overtemperature are often preset fixed values, which are difficult to adjust according to the demand of the chip. As a result, excessive power consumption or excessive temperature is consumed in the process of protecting the chip. Risk of chip damage.

綜觀前所述,本發明之發明者思索並設計一種晶片過電流及過溫保護方法,以期針對習知技術之問題加以改善,進而增進產業上之實施利用。In summary, the inventor of the present invention considered and designed a chip overcurrent and overtemperature protection method, in order to improve the problems of the conventional technology, and further enhance the industrial application.

有鑑於先前技術所述之問題,本發明的目的在於提供一種晶片過電流及過溫保護方法,避免晶片在操作時因為電流過大或溫度過高而造成晶片損壞的問題。In view of the problems described in the prior art, the purpose of the present invention is to provide a chip over-current and over-temperature protection method to avoid chip damage caused by excessive current or high temperature during operation of the chip.

基於上述目的,本發明提供一種晶片過電流及過溫保護方法,是由控制模組控制晶片的電流供應,晶片保護方法包含:藉由電流偵測模組偵測晶片的通過電流;藉由溫度感測模組感測晶片的操作溫度;當通過電流達到電流門檻值時,控制模組維持通過電流於電流門檻值;當維持電流門檻值持續達到電流維持時間,控制模組停止晶片的電流供應;以及當操作溫度回復至重啟門檻值時,控制模組持續停止電流供應關閉延遲時間後,重新啟動晶片的電流供應。Based on the above objective, the present invention provides a chip overcurrent and overtemperature protection method. A control module controls the current supply of the chip. The chip protection method includes: detecting the passing current of the chip by the current detection module; The sensing module senses the operating temperature of the chip; when the passing current reaches the current threshold, the control module maintains the passing current at the current threshold; when the holding current threshold continues to reach the current holding time, the control module stops the current supply to the chip ; And when the operating temperature returns to the restart threshold, the control module continues to stop the current supply for the shutdown delay time, and restarts the current supply of the chip.

較佳地,電流維持時間可包含當操作溫度達到溫度門檻值,控制模組停止晶片的電流供應。Preferably, the current maintaining time may include when the operating temperature reaches the temperature threshold, the control module stops the current supply to the chip.

較佳地,關閉延遲時間可包含當操作溫度降低至重啟溫度值,控制模組重新啟動晶片的電流供應。Preferably, the shutdown delay time may include when the operating temperature drops to the restart temperature value, the control module restarts the current supply of the chip.

較佳地,晶片過電流及過溫保護方法可進一步包含:當重新啟動晶片的電流供應時,若通過電流仍為電流門檻值,控制模組維持通過電流於電流門檻值;當維持電流門檻值持續達到電流維持時間,控制模組停止晶片的電流供應;以及當操作溫度回復至重啟門檻值時,控制模組持續停止電流供應關閉延遲時間後,重新啟動晶片的電流供應。Preferably, the chip over-current and over-temperature protection method may further include: when the chip's current supply is restarted, if the passing current is still at the current threshold, the control module maintains the passing current at the current threshold; when the current threshold is maintained When the current sustaining time is continuously reached, the control module stops the current supply of the chip; and when the operating temperature returns to the restart threshold, the control module continues to stop the current supply for the off delay time, and then restarts the current supply of the chip.

較佳地,晶片過電流及過溫保護方法可進一步包含:當重新啟動晶片的電流供應時,若通過電流低於電流門檻值,電流偵測模組持續偵測通過電流是否達到電流門檻值。Preferably, the chip overcurrent and overtemperature protection method may further include: when the chip's current supply is restarted, if the passing current is lower than the current threshold, the current detection module continuously detects whether the passing current reaches the current threshold.

較佳地,關閉延遲時間可為電流維持時間的2倍。Preferably, the turn-off delay time can be twice the current holding time.

較佳地,溫度門檻值可為150℃,重啟門檻值可為110℃。Preferably, the temperature threshold may be 150°C, and the restart threshold may be 110°C.

承上所述,依本發明之晶片過電流及過溫保護方法,其可具有一或多個下述優點:In summary, according to the chip overcurrent and overtemperature protection method of the present invention, it can have one or more of the following advantages:

(1) 此晶片過電流及過溫保護方法能在不改變電流門檻值、溫度門檻值及重啟門檻值的情況下,降低晶片操作所耗費的功耗,提升晶片操作的效率。(1) This chip over-current and over-temperature protection method can reduce the power consumption of chip operation and improve the efficiency of chip operation without changing the current threshold, temperature threshold and restart threshold.

(2) 此晶片過電流及過溫保護方法能在不改變電流門檻值、溫度門檻值及重啟門檻值的情況下,降低晶片的平均溫度,避免晶片因高溫而損壞,增加晶片的耐用度及可靠度。(2) This chip over-current and over-temperature protection method can reduce the average temperature of the chip without changing the current threshold, temperature threshold and restart threshold, avoiding damage to the chip due to high temperature, and increasing the durability of the chip. Reliability.

(3) 此晶片過電流及過溫保護方法可避免晶片在操作過程中因為通過電流過高或操作溫度過高而造成電路損毀,增加晶片的使用壽命。(3) This chip over-current and over-temperature protection method can prevent the chip from being damaged due to excessive current or operating temperature during operation, and increase the service life of the chip.

為利貴審查委員瞭解本發明之技術特徵、內容與優點及其所能達成之功效,茲將本發明配合附圖,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的權利範圍,合先敘明。In order to facilitate the reviewers to understand the technical features, content and advantages of the present invention and the effects that can be achieved, the present invention is described in detail with the accompanying drawings and in the form of embodiment expressions as follows, and the diagrams used therein are The subject matter is only for the purpose of illustration and auxiliary description, and may not be the true proportions and precise configuration after the implementation of the invention. Therefore, it should not be interpreted in terms of the proportions and configuration relationships of the attached drawings, and should not limit the scope of rights of the present invention in actual implementation. Hexian stated.

請參閱第1圖,第1圖係為本發明實施例之晶片過電流及過溫保護方法之流程圖。如圖所示,晶片過電流及過溫保護方法包含以下步驟(S11~S15):Please refer to FIG. 1, which is a flowchart of a chip overcurrent and overtemperature protection method according to an embodiment of the present invention. As shown in the figure, the chip over-current and over-temperature protection method includes the following steps (S11~S15):

步驟S11:藉由電流偵測模組偵測晶片的通過電流。對於電子裝置當中的晶片,包括各種驅動晶片、控制晶片,可設置相關的感測元件來監測晶片的操作狀態,防止晶片因為異常的電性或溫度而造成損壞。首先,在晶片中設置電流偵測模組,其可為比對電路,連接至晶片電路中選擇的操作節點,偵測此操作節點的通過電流是否超過臨界電流,進而判斷晶片中是否有電路異常或短路而造成操作上的異常。Step S11: Detect the passing current of the chip by the current detection module. For the chips in electronic devices, including various driving chips and control chips, related sensing elements can be set to monitor the operating status of the chips to prevent the chips from being damaged due to abnormal electrical properties or temperature. First, set up a current detection module in the chip, which can be a comparison circuit, connected to the selected operation node in the chip circuit, to detect whether the current through the operation node exceeds the critical current, and then determine whether there is a circuit abnormality in the chip Or short-circuit and cause abnormal operation.

步驟S12:藉由溫度感測模組感測晶片的操作溫度。除了偵測晶片的通過電流,也設置溫度感測模組來感測晶片的操作溫度,例如設置溫度感測器來量測晶片中預設接點的溫度。晶片在運作時,會設定的操作溫度區間,也會設計相關的散熱或降溫裝置來降低操作溫度,若是操作溫度超過設定的臨界溫度,可能會影響晶片的操作,甚至造成內部電路損壞而影響晶片原有的功能。Step S12: Sensing the operating temperature of the chip by the temperature sensing module. In addition to detecting the passing current of the chip, a temperature sensing module is also provided to sense the operating temperature of the chip. For example, a temperature sensor is set to measure the temperature of the predetermined contacts in the chip. When the chip is in operation, the operating temperature range is set, and related heat dissipation or cooling devices are also designed to reduce the operating temperature. If the operating temperature exceeds the set critical temperature, it may affect the operation of the chip, and even cause internal circuit damage and affect the chip The original function.

步驟S13:當通過電流達到電流門檻值時,控制模組維持通過電流於電流門檻值。晶片中的電流偵測模組會持續偵測晶片的通過電流,當通過電流超過預設的電流門檻值時,為保護晶片內部電路,晶片的控制模組會控制通過電流維持在電流門檻值,避免通過電流持續增加而超過內部電路所能承受的負荷。在本實施例中,控制模組包含過電流保護電路,當操作節點的通過電流持續增加達電流門檻值時,即啟動過電流保護電路,將通過電流鎖定於固定值。Step S13: When the passing current reaches the current threshold, the control module maintains the passing current at the current threshold. The current detection module in the chip will continuously detect the passing current of the chip. When the passing current exceeds the preset current threshold, in order to protect the internal circuits of the chip, the chip's control module will control the passing current to maintain the current threshold. Avoid the continuous increase of the current through which the internal circuit can withstand the load. In this embodiment, the control module includes an overcurrent protection circuit. When the through current of the operating node continues to increase to reach the current threshold, the overcurrent protection circuit is activated to lock the through current at a fixed value.

步驟S14:當維持電流門檻值持續達到電流維持時間,控制模組停止晶片的電流供應。當過電流保護電路啟動時,會將晶片的通過電流持續維持在電流門檻值,直到造成通過電流上升的原因解除,即偵測通過電流下降或恢復正常時,才會解除鎖定。然而,持續將通過電流維持於高電流的狀況,會持續增加晶片及整個電子裝置的功耗,造成無謂的浪費,因此,當維持電流門檻值持續一個預設的電流維持時間後,控制模組會將晶片的電流供應切斷,即關閉晶片的操作電路系統來將電流降為零,讓晶片不再持續消耗功耗,降低晶片所需的耗電量。Step S14: When the maintenance current threshold value continues to reach the current maintenance time, the control module stops the current supply of the chip. When the over-current protection circuit is activated, the through current of the chip will continue to be maintained at the current threshold until the cause of the through current rise is removed, that is, when the through current is detected to decrease or return to normal, the lock will be released. However, continuously maintaining the passing current at a high current condition will continue to increase the power consumption of the chip and the entire electronic device, causing unnecessary waste. Therefore, when the current threshold value is maintained for a preset current sustaining time, the control module The current supply of the chip is cut off, that is, the operating circuit system of the chip is turned off to reduce the current to zero, so that the chip no longer consumes power continuously, and reduces the power consumption of the chip.

在降低晶片功耗的目標下,最直接的操作方式是降低電流門檻值,使得整體電流供應能下降,但一般的過電流保護電路所設定的電流門檻值都是固定的,難以直接更動來配合不同晶片需求。因此,通過在電流維持時間後關閉晶片系統以停止電流供應,將能在不更動預設電流門檻值的情況下,達到降低功耗的效果。Under the goal of reducing chip power consumption, the most direct way of operation is to lower the current threshold, so that the overall current supply can be reduced, but the current threshold set by the general over-current protection circuit is fixed, and it is difficult to directly change it to match. Different chip requirements. Therefore, by shutting down the chip system after the current maintenance time to stop the current supply, the power consumption can be reduced without changing the preset current threshold.

在本實施例中,這個預設的電流維持時間可配合溫度感測模組所感測的操作溫度來決定,由於操作電流持續上升的情況,往往會伴隨操作溫度的上升,在造成通過電流上升的原因未解決前,晶片的操作溫度會持續上升。當溫度感測模組感測的操作溫度達到溫度門檻值時,通過控制模組的過溫保護電路關閉晶片的操作電路系統,使得通過電流降為零,不但能降低功耗,也能通過關閉系統來進行晶片的降溫。在另一實施例中,預設的電流維持時間也可為固定的預設時間區間,即在固定的時間切斷電流供應,降低晶片的功耗。In this embodiment, the preset current holding time can be determined in accordance with the operating temperature sensed by the temperature sensing module. As the operating current continues to rise, it is often accompanied by an increase in operating temperature, which will cause the passing current to rise. Until the cause is resolved, the operating temperature of the wafer will continue to rise. When the operating temperature sensed by the temperature sensing module reaches the temperature threshold, the over-temperature protection circuit of the control module closes the operating circuit system of the chip, so that the passing current is reduced to zero, which not only reduces power consumption, but also shuts down System to cool down the wafer. In another embodiment, the preset current maintenance time can also be a fixed preset time interval, that is, the current supply is cut off at a fixed time to reduce the power consumption of the chip.

步驟S15:當操作溫度回復至重啟門檻值時,控制模組持續停止電流供應關閉延遲時間後,重新啟動晶片的電流供應。由於控制模組會關閉電路使得晶片不再獲得電流供應,在未進行操作的情況下,晶片的操作溫度會隨時間降低,當溫度感測電路感測的操作溫度降至重啟門檻值時,過溫保護電路應重啟晶片使其恢復運作,但為了降低晶片的操作溫度,控制模組中設有控制電路,在過溫保護電路欲重啟系統時,仍持續切斷電流供應一段關閉延遲時間,使得晶片恢復供電的時間延後,增加晶片降溫的時間。Step S15: When the operating temperature returns to the restart threshold, the control module restarts the current supply of the chip after continuously stopping the current supply for the off delay time. Since the control module will close the circuit so that the chip no longer receives current supply, the operating temperature of the chip will decrease over time when it is not operating. When the operating temperature sensed by the temperature sensing circuit drops to the restart threshold, the The temperature protection circuit should restart the chip to resume operation. However, in order to reduce the operating temperature of the chip, a control circuit is provided in the control module. The time for the chip to restore power is delayed, increasing the time for the chip to cool down.

在本實施例中,關閉延遲時間可為預設的固定時間,例如關閉延遲時間為電流維持時間的2倍時間,當溫度感測電路感測操作溫度達到重啟門檻值時,控制電路延遲兩倍的電流維持時間,使得晶片在關閉延遲時間過後才重新啟動。在另一實施例中,關閉延遲時間也可配合溫度感測模組,當操作溫度持續降至溫度門檻值時,才重新啟動晶片的電流供應。延遲晶片重啟的時間,主要是為了降低晶片的溫度,不過一般的過溫保護電路,啟動過溫保護的溫度門檻值及恢復供電的重啟門檻值都是固定的,難以隨著晶片需求調整,當晶片正常的溫度操作區間較低時,可通過關閉延遲時間使得操作溫度進一步下降,進而降低晶片的平均溫度,使其符合晶片的正常操作範圍,避免高溫造成晶片電路或結構的損壞。In this embodiment, the turn-off delay time can be a preset fixed time, for example, the turn-off delay time is twice the current holding time. When the temperature sensing circuit senses that the operating temperature reaches the restart threshold, the control circuit delays twice. The current is maintained for the time, so that the chip restarts after the turn-off delay time has elapsed. In another embodiment, the turn-off delay time can also be matched with the temperature sensing module. When the operating temperature continues to drop to the temperature threshold, the current supply to the chip is restarted. Delaying the restart time of the chip is mainly to reduce the temperature of the chip. However, the general over-temperature protection circuit, the temperature threshold for starting the over-temperature protection and the restart threshold for power recovery are fixed, and it is difficult to adjust with the demand of the chip. When the normal temperature operating range of the wafer is low, the operating temperature can be further reduced by the turn-off delay time, thereby reducing the average temperature of the wafer to conform to the normal operating range of the wafer, and avoiding damage to the circuit or structure of the wafer caused by high temperature.

請參閱第2圖,第2圖係為本發明另一實施例之晶片過電流及過溫保護方法之流程圖。如圖所示,晶片過電流及過溫保護方法包含以下步驟(S21~S26):Please refer to FIG. 2, which is a flowchart of a chip over-current and over-temperature protection method according to another embodiment of the present invention. As shown in the figure, the chip over-current and over-temperature protection method includes the following steps (S21~S26):

步驟S21:藉由電流偵測模組偵測晶片的通過電流;步驟S22:藉由溫度感測模組感測晶片的操作溫度;步驟S23:當通過電流達到電流門檻值時,控制模組維持通過電流於電流門檻值;步驟S24:當維持電流門檻值持續達到電流維持時間,控制模組停止晶片的電流供應;以及步驟S25:當操作溫度回復至重啟門檻值時,控制模組持續停止電流供應關閉延遲時間後,重新啟動晶片的電流供應。上述步驟S21~S25的內容對應於前述實施例的步驟S11~S15,相同技術內容不再重複描述,請參閱第1圖中之說明。Step S21: Detect the passing current of the chip by the current detection module; Step S22: Detect the operating temperature of the chip by the temperature detection module; Step S23: When the passing current reaches the current threshold, the control module maintains Pass the current to the current threshold; Step S24: When the maintenance current threshold continues to reach the current maintenance time, the control module stops the current supply to the chip; and Step S25: When the operating temperature returns to the restart threshold, the control module continues to stop the current After the supply shutdown delay time, the current supply to the chip is restarted. The content of the above steps S21 to S25 corresponds to the steps S11 to S15 of the foregoing embodiment, and the same technical content will not be described repeatedly, please refer to the description in Figure 1.

與前述實施例不同,本實施例包含步驟S26:判斷通過電流是否仍為電流門檻值。若是,則重新回到步驟S23:當通過電流達到電流門檻值時,控制模組維持通過電流於電流門檻值。當步驟S25結束後,重新啟動晶片操作系統,對晶片進行供電,若是判斷通過電流仍維持在電流門檻值,表示晶片仍處於過電流的狀態,並未解決電流過高的問題,此時控制模組將持續維持通過電流於電流門檻值,同樣在經過電流維持時間後,停止晶片的電流供應以降低功耗。此外,當操作溫度回復至重啟門檻值時,控制模組持續停止電流供應關閉延遲時間後,才重新啟動晶片的電流供應。由於過電流的狀態可能是電路短路或斷路造成,無法即時排除,因此重複本實施例的操作流程,能持續降低晶片的功耗及平均溫度,直到電路異常狀態排除。Different from the foregoing embodiment, this embodiment includes step S26: judging whether the through current is still the current threshold value. If yes, return to step S23: when the passing current reaches the current threshold, the control module maintains the passing current at the current threshold. After step S25 is over, restart the chip operating system to supply power to the chip. If it is determined that the passing current is still maintained at the current threshold, it means that the chip is still in an overcurrent state, and the problem of excessive current is not solved. At this time, the control mode The group will continue to maintain the passing current at the current threshold, and also after the current holding time has elapsed, stop the current supply to the chip to reduce power consumption. In addition, when the operating temperature returns to the restart threshold, the control module continues to stop the current supply for a shutdown delay time before restarting the current supply to the chip. Since the overcurrent state may be caused by a short circuit or open circuit, it cannot be eliminated immediately. Therefore, repeating the operation process of this embodiment can continuously reduce the power consumption and average temperature of the chip until the abnormal circuit state is eliminated.

同樣在步驟S26當中,當異常狀態排除時,晶片的通過電流應恢復正常而降低至電流門檻值下,此時晶片的操作回復正常,回到步驟S21持續監測通過電流及步驟S22感測操作溫度,若通過電流或操作溫度產生異常,才接續後續過電流及過溫保護的步驟。Also in step S26, when the abnormal state is eliminated, the passing current of the chip should return to normal and drop below the current threshold. At this time, the operation of the chip returns to normal. Return to step S21 to continuously monitor the passing current and step S22 to sense the operating temperature. , If there is an abnormality in the passing current or the operating temperature, the subsequent steps of over-current and over-temperature protection will be continued.

請參閱第3圖,第3圖係為本發明實施例之晶片過電流及過溫保護方法之示意圖。晶片實際操作的狀態,通過溫度感測模組感測的操作溫度T及通過電流偵測模組偵測的通過電流I,在時間軸t所呈現的溫度及電流大小如圖所示。在起始時間t0時,晶片接收電流而啟動,但晶片內部電路的短路或斷路,造成電路異常作動,通過電流I在超過工作電流後仍持續上升,同時晶片的操作溫度T也相應的持續上升。在第一時間點t1,通過電流I達到電流門檻值I OCP,為了保護晶片,過電流保護電路會鎖住電路,控制通過電流I維持在電流門檻值I OCP而不再上升,等待故障或異常排除。 Please refer to FIG. 3, which is a schematic diagram of a chip over-current and over-temperature protection method according to an embodiment of the present invention. The actual operating state of the chip, the operating temperature T sensed by the temperature sensing module and the passing current I sensed by the current sensing module, the temperature and current magnitude displayed on the time axis t are shown in the figure. At the initial time t0, the chip receives current and starts, but the internal circuit of the chip is short-circuited or open, causing the circuit to operate abnormally. The passing current I continues to rise after exceeding the operating current, and the operating temperature T of the chip also continues to rise accordingly. . At the first time point t1, the passing current I reaches the current threshold I OCP , in order to protect the chip, the overcurrent protection circuit will lock the circuit and control the passing current I to maintain the current threshold I OCP without rising anymore, waiting for failure or abnormality exclude.

不過,當通過電流I持續維持在電流門檻值I OCP時,晶片仍處於異常操作的狀態,高電流也持續增加晶片的操作溫度T,為了避免溫度持續升高且降低晶片的功耗,當維持時間達到預設的電流維持時間t det時,晶片的控制模組關閉晶片操作系統,停止對晶片的電流供應,即在第二時間點t2,通過電流I降為零。在本實施例中,電流維持時間t det為操作溫度達到溫度門檻值T D時,通過控制模組的過溫保護電路關閉系統供電,使得晶片能進行降溫來保護晶片中的電路。當晶片經過一段關閉時間t c到達第三時間點t3時,操作溫度T降至重啟門檻值T R,此時過溫保護電路應恢復供電重啟晶片,但晶片的控制模組進一步延遲一段的關閉延遲時間t delay後,才於第四時間點t4重新啟動晶片,重新提供晶片的電流供應。 However, when the passing current I is continuously maintained at the current threshold I OCP , the chip is still in an abnormal operation state, and the high current also continues to increase the operating temperature T of the chip. In order to avoid the continuous increase in temperature and reduce the power consumption of the chip, when maintaining When the time reaches the preset current maintenance time t det , the control module of the chip turns off the chip operating system and stops the current supply to the chip, that is, at the second time point t2, the passing current I drops to zero. In the present embodiment, the current is maintained for the time t det operating temperature reaches the threshold temperature T D, through the protection circuit of the system has power control module, such that the wafer can cool the wafer to protect the circuit. When the chip is turned off for a period of time t c and reaches the third time point t3, the operating temperature T drops to the restart threshold value TR . At this time, the over-temperature protection circuit should restore power to restart the chip, but the control module of the chip further delays its shutdown for a period of time After the delay time t delay , the chip is restarted at the fourth time point t4 to re-provide the current supply of the chip.

由於在第二時間點t2至第三時間點t3之間電流供應為零,並不會產生電能的消耗,若是為關閉時間t c為電流維持時間t det的2倍,從第一時間點t1至第三時間點t3之間,晶片的功耗為原本通過電流持續在電流門檻值I OCP時所消耗功耗的1/3。當本實施利進一步延長關閉延遲時間t delay後,若是為關閉延遲時間t delay也同樣是電流維持時間t det的2倍,從第一時間點t1至第四時間點t4之間,晶片的功耗為原本通過電流持續在電流門檻值I OCP時所消耗功耗的1/5。在預設的電流門檻值I OCP、溫度門檻值T D及重啟門檻值T R不改變的情況下,有效的降低晶片所消耗的功耗,避免不必要的電能浪費。 Since the current supply is zero between the second time point t2 and the third time point t3, no electrical energy consumption will be generated. If the off time t c is twice the current maintenance time t det , from the first time point t1 Between the third time point t3, the power consumption of the chip is 1/3 of the power consumption when the original passing current continues to be the current threshold I OCP. When the present embodiment further extends the turn-off delay time t delay , if it is the turn-off delay time t delay, it is also twice the current holding time t det . From the first time point t1 to the fourth time point t4, the power of the chip The power consumption is 1/5 of the power consumption when the original passing current continues to be at the current threshold I OCP. Under the condition that the preset current threshold I OCP , temperature threshold T D, and restart threshold TR are not changed, the power consumption of the chip is effectively reduced, and unnecessary power waste is avoided.

另一方面,若是原本溫度門檻值T D為150℃且重啟門檻值T R為110℃,晶片的平均溫度應為兩者平均的130℃。但在本實施例中,再操作溫度T降至重啟門檻值T R後,進一步延遲一段的關閉延遲時間t delay,同樣以上述關閉時間t c和關閉延遲時間t delay都是電流維持時間t det的2倍來計算,當第四時間點t4時,真正的重啟溫度值T O應為70℃。晶片的平均溫度也因此下降至110℃,相較之下晶片平均溫度下降了20℃,在溫度門檻值T D及重啟門檻值T R不改變的情況下,有效的降低晶片的平均溫度。 On the other hand, if the original threshold temperature of 150 deg.] C and T D restart threshold T R of 110 deg.] C, the average temperature of the wafer should be the average of both 130 ℃. However, in this embodiment, after the operating temperature T drops to the restart threshold TR , the turn-off delay time t delay is further delayed for a period of time. Similarly, the above-mentioned turn-off time t c and the turn-off delay time t delay are both the current maintenance time t det Calculated by 2 times of, when the fourth time point t4, the real restart temperature T O should be 70°C. The average temperature of the wafer is therefore decreased to 110 deg.] C, the average temperature of the wafer decreased contrast of 20 ℃, when the temperature threshold T D T R and restart thresholds are not changed, effectively reducing the average temperature of the wafer.

當第四時間點t4系統重啟時,重新供應晶片通過電流I,此時若晶片異常尚未排除,晶片的通過電流I仍將達到電流門檻值I OCP,此時,重複前述的保護方式,維持通過電流I在電流門檻值I OCP,經過電流維持時間t det後於第五時間點t5關閉系統,停止晶片的電流供應,當晶片操作溫度T於第六時間點t6下降至重啟門檻值T R後,再進一步延遲一段的關閉延遲時間t delay,於第七時間點t7達到重啟溫度值T O,重啟系統恢復電流供應。不斷重複上述的過電流及過溫保護流程,直到晶片異常排除,通過電流I恢復至低於電流門檻值I OCP的正常工作電流,此時,晶片的電流偵測模組及溫度感測模組持續監測通過電流I及操作溫度T,當通過電流I再次達到電流門檻值I OCP時,重新執行上述的過電流及過溫保護流程。 When the system restarts at the fourth time t4, the chip passing current I is re-supplied. At this time, if the abnormality of the chip has not been eliminated, the chip passing current I will still reach the current threshold I OCP . At this time, the aforementioned protection method is repeated to maintain the passing the threshold current of the current I I in the OCP, elapsed time t det current is maintained after the fifth time point t5 shut down the system, to stop the current supply of the wafer, when the wafer is at operating temperature T drops to the sixth time point t6 R & lt restart threshold T and further delayed by a delay the closing time t delay, the seventh time point t7 reaches restart temperature T O, the recovery current supply to restart the system. Repeat the above-mentioned over-current and over-temperature protection process until the chip is abnormally eliminated, and the passing current I returns to the normal working current lower than the current threshold I OCP . At this time, the chip’s current detection module and temperature sensing module The passing current I and the operating temperature T are continuously monitored, and when the passing current I reaches the current threshold I OCP again, the above-mentioned over-current and over-temperature protection procedures are re-executed.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above descriptions are merely illustrative, and not restrictive. Any equivalent modifications or alterations that do not depart from the spirit and scope of the present invention shall be included in the scope of the appended patent application.

I:通過電流 I OCP:電流門檻值 S11~S15, S21~S26:步驟 T:操作溫度 T D:溫度門檻值 T R:重啟門檻值 T O:重啟溫度值 t:時間軸 t0:起始時間 t1:第一時間點 t2:第二時間點 t3:第三時間點 t4:第四時間點 t5:第五時間點 t6:第六時間點 t7:第七時間點 t c:關閉時間 t delay:關閉延遲時間 t det:電流維持時間I: Through current I OCP : Current threshold S11~S15, S21~S26: Step T: Operating temperature T D : Temperature threshold T R : Restart threshold T O : Restart temperature t: Time axis t0: Start time t1: first time point t2: second time point t3: third time point t4: fourth time point t5: fifth time point t6: sixth time point t7: seventh time point t c : closing time t delay : Turn-off delay time t det : current maintenance time

為使本發明之技術特徵、內容與優點及其所能達成之功效更為顯而易見,茲將本發明配合以下附圖進行說明: 第1圖係為本發明實施例之晶片過電流及過溫保護方法之流程圖。 第2圖係為本發明另一實施例之晶片過電流及過溫保護方法之流程圖。 第3圖係為本發明實施例之晶片過電流及過溫保護方法之示意圖。 In order to make the technical features, content and advantages of the present invention and the effects it can achieve more obvious, the present invention is illustrated with the following drawings: FIG. 1 is a flowchart of a chip overcurrent and overtemperature protection method according to an embodiment of the present invention. FIG. 2 is a flowchart of a chip overcurrent and overtemperature protection method according to another embodiment of the invention. FIG. 3 is a schematic diagram of a chip overcurrent and overtemperature protection method according to an embodiment of the present invention.

S11~S15:步驟 S11~S15: steps

Claims (7)

一種晶片過電流及過溫保護方法,係由一控制模組控制一晶片的電流供應,該晶片保護方法包含: 藉由一電流偵測模組偵測該晶片的一通過電流; 藉由一溫度感測模組感測該晶片的一操作溫度; 當該通過電流達到一電流門檻值時,該控制模組維持該通過電流於該電流門檻值; 當維持該電流門檻值持續達到一電流維持時間,該控制模組停止該晶片的電流供應;以及 當該操作溫度回復至一重啟門檻值時,該控制模組持續停止電流供應一關閉延遲時間後,重新啟動該晶片的電流供應。 A chip over-current and over-temperature protection method. A control module controls the current supply of a chip. The chip protection method includes: Detect a passing current of the chip by a current detection module; Sensing an operating temperature of the chip by a temperature sensing module; When the through current reaches a current threshold, the control module maintains the through current at the current threshold; When the current threshold is maintained for a current sustaining time, the control module stops the current supply of the chip; and When the operating temperature returns to a restart threshold, the control module continues to stop the current supply for a turn-off delay time, and then restarts the current supply of the chip. 如請求項1所述之晶片過電流及過溫保護方法,其中該電流維持時間包含當該操作溫度達到一溫度門檻值,該控制模組停止該晶片的電流供應。The chip overcurrent and overtemperature protection method of claim 1, wherein the current maintenance time includes when the operating temperature reaches a temperature threshold, the control module stops the current supply of the chip. 如請求項1所述之晶片過電流及過溫保護方法,其中該關閉延遲時間包含當該操作溫度降低至一重啟溫度值,該控制模組重新啟動該晶片的電流供應。The chip overcurrent and overtemperature protection method according to claim 1, wherein the shutdown delay time includes when the operating temperature drops to a restart temperature value, the control module restarts the current supply of the chip. 如請求項1所述之晶片過電流及過溫保護方法,進一步包含: 當重新啟動該晶片的電流供應時,若該通過電流仍為該電流門檻值,該控制模組維持該通過電流於該電流門檻值; 當維持該電流門檻值持續達到該電流維持時間,該控制模組停止該晶片的電流供應;以及 當該操作溫度回復至該重啟門檻值時,該控制模組持續停止電流供應該關閉延遲時間後,重新啟動該晶片的電流供應。 The chip overcurrent and overtemperature protection method as described in claim 1, further comprising: When the current supply of the chip is restarted, if the through current is still at the current threshold, the control module maintains the through current at the current threshold; When the current threshold is maintained for the current sustaining time, the control module stops the current supply of the chip; and When the operating temperature returns to the restart threshold, the control module continues to stop the current supply for the shutdown delay time, and then restarts the current supply of the chip. 如請求項1所述之晶片過電流及過溫保護方法,進一步包含: 當重新啟動該晶片的電流供應時,若該通過電流低於該電流門檻值,該電流偵測模組持續偵測該通過電流是否達到該電流門檻值。 The chip overcurrent and overtemperature protection method as described in claim 1, further comprising: When the current supply of the chip is restarted, if the through current is lower than the current threshold, the current detection module continuously detects whether the through current reaches the current threshold. 如請求項1所述之晶片過電流及過溫保護方法,其中該關閉延遲時間為該電流維持時間的2倍。The chip over-current and over-temperature protection method according to claim 1, wherein the turn-off delay time is twice the current holding time. 如請求項2所述之晶片過電流及過溫保護方法,其中該溫度門檻值為150℃,該重啟門檻值為110℃。The chip overcurrent and overtemperature protection method according to claim 2, wherein the temperature threshold is 150°C, and the restart threshold is 110°C.
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