TWI747798B - Semiconductor device, imaging device, and electronic device - Google Patents

Abstract

Provided is a novel semiconductor device, a semiconductor device with reduced area, or a versatile semiconductor device. The semiconductor device includes a pixel portion including a first pixel, a second pixel, a third pixel, and a fourth pixel; a first switch and a second switch located outside the first to fourth pixels; a first wiring located outside the first to fourth pixels; a second wiring electrically connected to the first and second pixels; and a third wiring electrically connected to the third and fourth pixels. A first terminal of the first switch is electrically connected to the first wiring. A second terminal of the first switch is electrically connected to the second wiring. A first terminal of the second switch is electrically connected to the first wiring. A second terminal of the second switch is electrically connected to the third wiring.

Description

Semiconductor device, imaging device and electronic device

One embodiment of the present invention relates to a semiconductor device, an imaging device, and an electronic device.

Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of an embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, an embodiment of the present invention relates to a process, machine, product, or composition of matter. In addition, one embodiment of the present invention relates to a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof.

Technical development has been carried out on a light detection device using a light detection circuit (also called a light sensor) capable of generating data corresponding to the illuminance of incident light.

As the light detection device, for example, an image sensor can be cited. As the image sensor, there are CCD (Charge Coupled Device) image sensor, CMOS (Complementary Metal Oxide Semiconductor: Complementary Metal Oxide Semiconductor) image sensor, etc. As an imaging element, CMOS image sensors are installed in many portable devices such as digital cameras or mobile phones. In recent years, the sharpness of imaging has increased, portable devices have been miniaturized, and power consumption has been reduced, so the pixels in CMOS image sensors have been made smaller.

Patent Document 1 discloses an imaging element in which a transistor is commonly used between adjacent pixels to reduce the area of the pixel.

[Patent Document 1] Japanese Patent Application Publication No. 11-126895

Because the commonly used elements in the image sensor are provided in the pixel area, even when a transistor or the like is commonly used in a plurality of pixels, the commonly used element occupies a fixed area in the pixel area. Therefore, even if a plurality of pixels in the pixel area use elements in common, there is a limit to the reduction in the area of the pixel area.

In addition, in Patent Document 1, the amplifier and the reset transistor are connected to the same power supply line. As a result, it is impossible to set the voltage of the power supply for amplification and the voltage of the power supply for resetting separately, resulting in a decrease in design flexibility of the pixel. On the other hand, when the power supply line for amplification is different from the power supply line for resetting, it is necessary to secure a space to provide two power supply lines in the pixel, which leads to an increase in the area of the pixel and a decrease in the aperture ratio.

One of the objects of an embodiment of the present invention is to provide a novel semiconductor device. One of the objects of one embodiment of the present invention is to provide a semiconductor device capable of reducing the area. One of the objects of one embodiment of the present invention is to provide a semiconductor device with high versatility. One of the objects of one embodiment of the present invention is to provide a semiconductor device capable of high-precision imaging. One of the objects of one embodiment of the present invention is to provide a semiconductor device capable of reducing power consumption. One of the objects of one embodiment of the present invention is to provide a semiconductor device capable of high-speed imaging.

Note that an embodiment of the present invention does not need to achieve all the above-mentioned objects, as long as it can achieve at least one object. In addition, the description of the above purpose does not prevent the existence of other purposes. It is obvious that there are purposes other than the above-mentioned purposes in the descriptions of the specification, drawings, and the scope of patent application, and purposes other than the above-mentioned purposes can be derived from the descriptions of the specification, drawings, and the scope of patent application.

One embodiment of the present invention is a semiconductor device including: a pixel portion including a first pixel, a second pixel, a third pixel, and a fourth pixel; External first switch and second switch; first wiring located outside the first pixel, second pixel, third pixel, and fourth pixel; second wiring electrically connected to the first pixel and second pixel; and A third wiring electrically connected to the third pixel and the fourth pixel, wherein the first terminal of the first switch is electrically connected to the first wiring, the second terminal of the first switch is electrically connected to the second wiring, and the first terminal of the second switch is electrically connected to the second wiring. The terminal is electrically connected to the first wiring, and the second terminal of the second switch is electrically connected to the third wiring.

One embodiment of the present invention is a semiconductor device including: a pixel portion including a first pixel, a second pixel, a third pixel, and a fourth pixel; External first switch and second switch; first wiring located outside the first pixel, second pixel, third pixel, and fourth pixel; second wiring electrically connected to the first pixel and second pixel; and A third wiring electrically connected to the third pixel and the fourth pixel, wherein the first terminal of the first switch is electrically connected to the first wiring, the second terminal of the first switch is electrically connected to the second wiring, and the first terminal of the second switch is electrically connected to the second wiring. The terminal is electrically connected to the first wiring, and the second terminal of the second switch is electrically connected to the third wiring. The semiconductor device of one embodiment of the present invention includes the following steps: The first step of pixel reset; after the first step, the first switch is turned on, the potential of the first wiring is supplied to the second wiring, and the second step of reading out electrical signals from the first pixel and the second pixel ; After the second step, the third step of resetting the first pixel, the second pixel, the third pixel, and the fourth pixel; and after the third step, the second switch is turned on, and the first wiring The potential is supplied to the third wiring, and the fourth step of reading out electrical signals from the third pixel and the fourth pixel.

The semiconductor device of one embodiment of the present invention may further include a fourth wiring capable of supplying a reset potential to the first pixel, the second pixel, the third pixel, and the fourth pixel, wherein the first wiring may be supplied with a higher voltage than the fourth wiring. The potential.

In the semiconductor device of one embodiment of the present invention, the first pixel, the second pixel, the third pixel, and the fourth pixel may all include a photoelectric conversion element and a transistor. The photoelectric conversion element is electrically connected to the transistor, and the transistor is The channel formation region may include an oxide semiconductor.

In the semiconductor device of an embodiment of the present invention, the first switch may include a first transistor, the second switch may include a second transistor, and the first pixel, the second pixel, the third pixel, and the fourth pixel may all include The photoelectric conversion element and the third transistor, the photoelectric conversion element can be electrically connected to the third transistor, the channel forming region of the first transistor and the second transistor can both include a single crystal semiconductor, and the channel forming region of the third transistor can be The oxide semiconductor is included, and the third transistor may be laminated on the first transistor and the second transistor.

In the semiconductor device of one embodiment of the present invention, the photoelectric conversion element may include a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and the photoelectric conversion layer may contain selenium.

One embodiment of the present invention is an imaging device including: a photodetection section including the above-mentioned semiconductor device; and a data processing section capable of generating image data based on a signal from the photodetection section.

One embodiment of the present invention is an electronic device including: one of the aforementioned semiconductor device and the aforementioned imaging device; and at least one of a lens, a display portion, an operation key, and a shutter button.

According to an embodiment of the present invention, a novel semiconductor device can be provided. According to an embodiment of the present invention, it is possible to provide a semiconductor device capable of reducing the area. According to an embodiment of the present invention, a semiconductor device with high versatility can be provided. According to an embodiment of the present invention, it is possible to provide a semiconductor device capable of high-precision imaging. According to an embodiment of the present invention, a semiconductor device capable of reducing power consumption can be provided. According to an embodiment of the present invention, a semiconductor device capable of high-speed imaging can be provided.

Note that the description of the above effects does not prevent the existence of other effects. An embodiment of the present invention does not need to have all the above-mentioned effects. It is obvious that there are effects other than the above-mentioned effects in the descriptions of the specification, drawings, and the scope of patent application, and effects other than the above-mentioned effects can be derived from the descriptions of the specification, drawings, and the scope of patent application.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the description in the following embodiments, and those of ordinary skill in the art can easily understand the fact that the method and details can be modified without departing from the spirit and scope of the present invention. Transform into various forms. Therefore, the present invention should not be interpreted as being limited to only the content described in the embodiments shown below.

In addition, an embodiment of the present invention includes devices including an imaging device, an RF (Radio Frequency) tag, a display device, and an integrated circuit in its category. In addition, display devices include liquid crystal display devices, light-emitting devices in which each pixel includes light-emitting elements represented by organic light-emitting elements, electronic paper, DMD (Digital Micromirror Device: Digital Micromirror Device), and PDP (Plasma Display Panel: Plasma display panels), FED (Field Emission Display: Field Emission Display) and other display devices with integrated circuits.

Note that when the structure of the invention is described by the drawings, the component symbols representing the same object are sometimes used in common in different drawings.

In addition, in this specification and the like, when it is clearly stated as "X and Y are connected", the following cases are disclosed in this specification and the like: the case where X and Y are electrically connected; the case where X and Y are functionally connected; and When X and Y are directly connected. Therefore, it is not limited to the prescribed connection relations such as the connection relations shown in the drawings or the text, and connection relations other than the connection relations shown in the drawings or the text are also described in the drawings or the text. Here, X and Y are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

As an example of the case where X and Y are directly connected, one can cite: elements that can electrically connect X and Y (for example, switches, transistors, capacitors, inductors, resistance elements, diodes, display elements, light-emitting elements, and loads). Etc.) The case where X and Y are not connected; and the case where X and Y are not connected by components that can electrically connect X and Y.

As an example of the case where X and Y are electrically connected, for example, one or more elements (such as switches, transistors, capacitors, inductors, resistance elements, diodes) that can electrically connect X and Y can be connected between X and Y. , Display components, light-emitting components and loads, etc.). The switch has the function of controlling opening and closing. In other words, by making the switch in a conducting state (open state) or non-conducting state (closed state) to control whether to allow current to flow. Alternatively, the switch has the function of selecting and switching the current path. In addition, the case where X and Y are electrically connected includes the case where X and Y are directly connected.

As an example of a case where X and Y are functionally connected, for example, more than one circuit capable of functionally connecting X and Y (for example, logic circuit (inverter, NAND circuit, NOR circuit) can be connected between X and Y. Circuit, etc.), signal conversion circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), change the potential level of the signal Quasi-transfer circuits, etc.), voltage sources, current sources, switching circuits, amplifier circuits (circuits that can increase signal amplitude or current, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal Generation circuit, memory circuit, control circuit, etc.). Note that, for example, even if there are other circuits sandwiched between X and Y, when the signal output from X is transmitted to Y, it can be said that X and Y are functionally connected. In addition, the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

In addition, when it is clearly stated that "X and Y are electrically connected", the following is disclosed in this specification and the like: the case where X is electrically connected to Y (in other words, X and Y are connected with other elements or other circuits interposed therebetween. The case of Y); the case where X and Y are functionally connected (in other words, the case where X and Y are functionally connected with other circuits in between); and the case where X and Y are directly connected (in other words, the case where there is no middle Connect X and Y with other components or other circuits). In other words, in this specification and the like, what is clearly stated as "electrically connected" is the same as what is clearly stated as only "connected".

In addition, even if independent constituent elements are electrically connected to each other in the drawings, there are cases where one constituent element has the functions of multiple constituent elements. For example, when a part of the wiring is also used as an electrode, one conductive film has the functions of two components of the wiring and the electrode. Therefore, the category of "electrical connection" in this specification also includes the case where such a single conductive film has the functions of a plurality of constituent elements.

Embodiment 1 In this embodiment mode, a configuration example of a semiconductor device according to an embodiment of the present invention will be described.

<Structure example of semiconductor device 10> FIG. 1 shows a structural example of a semiconductor device 10 according to an embodiment of the present invention. The semiconductor device 10 includes a pixel unit 20, a circuit 30, and a circuit 40. The semiconductor device 10 includes a wiring VIN and a plurality of switches S outside the pixel portion 20.

The pixel portion 20 includes a plurality of pixels 21. Here, a configuration example in which pixels 21 (pixels 21 [1, 1] to [n, m]) of n rows and m columns (n and m are natural numbers) are provided in the pixel portion 20 is shown. The pixel 21 has a function of converting the irradiated light into an electrical signal (hereinafter, also referred to as an optical data signal). Therefore, the pixel 21 is used as a light detection circuit in the imaging device. Specifically, the light irradiated to the photoelectric conversion element provided in the pixel 21 is converted into an electric signal.

The pixels 21 are all connected to the wiring SE and the wiring OUT. Specifically, the pixel 21 (pixel 21[i,1]) in the i-th row (i is an integer greater than or equal to 1 and less than n) is connected to the wiring SE[i], and the j-th column (where j is 1 or greater and m or less Integer) pixels 21 (pixels 21 [1, j] to [n, j]) are connected to the wiring OUT[j]. The optical data signal generated in each pixel 21 is output to the circuit 40 through the wiring OUT.

In the pixel portion 20, by providing a pixel 21 that receives red light, a pixel 21 that receives green light, and a pixel 21 that receives blue light, it is also possible to generate optical data signals from each pixel 21 and combine them. These optical data signals are used to generate data signals of full-color image signals. In addition, instead of or in addition to these pixels 21, pixels 21 that receive light in one or more of cyan, magenta, and yellow may be provided. By installing pixels 21 that receive light in one or more of cyan, magenta, and yellow, it is possible to increase the types of colors that can be reproduced in the image based on the generated image signal . For example, by providing a color layer that transmits light of a specific color in the pixel 21, and allowing the light to pass through the color layer and enter the pixel 21, a light data signal based on the amount of light of the specific color can be generated. In addition, the light detected in the pixel 21 may be either visible light or invisible light.

In addition, a cooling unit may be provided for the pixel 21. By installing a cooling unit, noise caused by heat can be suppressed.

The circuit 30 is a driving circuit having a function of selecting the pixels 21 of a specific row among the pixels 21 of n rows. The circuit 30 selects the pixels 21 of a specific row that output the optical data signal. Specifically, the circuit 30 controls the conduction state of the plurality of switches S by outputting control signals to the plurality of switches S (switches S1 to Sn), and selects the pixels 21 in a specific row. The circuit 30 may be constituted by a decoder or the like.

In addition, the circuit 30 may also have a function of supplying a reset signal to the pixel 21.

The circuit 40 is a readout circuit having a function of outputting the optical data signal obtained in the pixel portion to the outside. Specifically, the circuit 40 is connected to the pixel 21 through the wiring OUT, and has a function of outputting the optical data signal input from the predetermined pixel 21 through the wiring OUT to the outside. The circuit 40 may be composed of a current source, a transistor, and the like.

The circuit 40 has a function of supplying a predetermined potential to the wiring OUT. Thus, when the signal generated in the pixel 21 is output to the outside, the potential of the wiring OUT used for output can be reset. In addition, the circuit 40 can also be used as a constant current source. Therefore, the circuit 40 can supply a predetermined potential to the wiring OUT in accordance with the signal input from the pixel 21.

The semiconductor device 10 includes a plurality of switches S (switches S1 to Sn) and wiring VIN outside the pixel portion 20. In addition, the first terminal of the switch Si is connected to the wiring SE[i], and the second terminal is connected to the wiring VIN. The switch S has a function of controlling the conduction state between the wiring SE and the wiring VIN in accordance with a control signal input from the circuit 30.

The wiring VIN is a power line for outputting optical data signals. When the switch Si is in the on state and the wiring VIN and the wiring SE[i] are in the conductive state, the optical data signal is output to the circuit 40 from the pixels 21[i, 1] to [i, m] connected to the wiring SE[i].

For example, when reading out optical data signals from the pixels 21 [1, 1] to [1, m] in the first row, a predetermined control signal is output from the circuit 40 to the switch S1, and the switch S1 is turned on. Thus, the wiring SE[1] and the wiring VIN are in a conductive state, and the potential (power supply potential) of the wiring VIN is supplied to the pixels 21[1,1] to [1,m], so that the optical data signal can be read out.

As such, in one embodiment of the present invention, the switch S for selecting the pixel 21 is commonly used in the pixels 21 in the same row, and the switch S is provided outside the pixel portion 20. Therefore, it is not necessary to provide a switch (transistor or the like) for selecting the pixel 21 in the pixel portion 20 and a power supply line connected to the switch, and thus the area of the pixel portion 20 can be reduced.

In one embodiment of the present invention, the wiring VIN used as a power supply line for reading out the optical data signal from the pixel 21 is also provided outside the pixel section 20. Therefore, even if the wiring VIN is configured by a wiring different from other power supply lines (reset power supply lines, etc.) connected to the pixels 21, it is possible to suppress an increase in the area of the pixel portion 20. In addition, the wiring VIN can be supplied with a different potential from other power supply lines connected to the pixels 21. Therefore, the power supply potential for reading out the optical data signal can be freely set, and the design flexibility and versatility of the semiconductor device 10 can be improved.

Note that when the optical data signal is read out in a specific row, it is preferable that the wiring SE and the wiring OUT are in a non-conducting state in other rows. Therefore, the optical data signal can be read out more accurately.

＜Example of circuit structure＞ Next, the specific circuit configuration of the semiconductor device 10 will be described. FIG. 2 shows an example of the circuit structure of the semiconductor device 10 including the pixel 21 and the circuit 41. Note that although the transistors are all examples of n-channel type transistors shown here, each of the transistors described below may be an n-channel type transistor or a p-channel type transistor.

First, an example of the structure of the pixel 21 will be described.

The pixel 21 shown in FIG. 2 includes a photoelectric conversion element 101, transistors 102, 103, and 104, and a capacitor 105. The first terminal of the photoelectric conversion element 101 is connected to one of the source and drain of the transistor 102, and the second terminal is connected to the wiring VPD. The gate of the transistor 102 is connected to the wiring TX, and the other of the source and drain is connected to the gate of the transistor 104. The gate of the transistor 103 is connected to the wiring PR, one of the source and drain is connected to the gate of the transistor 104, and the other of the source and drain is connected to the wiring VPR. One of the source and drain of the transistor 104 is connected to the wiring SE, and the other of the source and drain is connected to the wiring OUT. One electrode of the capacitor 105 is connected to the gate of the transistor 104, and the other electrode is connected to the wiring VPD. Here, the node connected to the other of the source and drain of the transistor 102, one of the source and drain of the transistor 103, the gate of the transistor 104 and one electrode of the capacitor 105 is referred to as a node FN. The capacitor 105 may be composed of a capacitive element or parasitic capacitance. When the gate capacitance of the transistor 104 is sufficiently large, the capacitor 105 and the wiring VPD can be omitted.

Note that in this specification and the like, the source of the transistor refers to a source region of a part of a semiconductor used as an active layer or a source electrode connected to the above-mentioned semiconductor. Similarly, the drain of the transistor refers to a part of the drain region of the above-mentioned semiconductor or the drain electrode connected to the above-mentioned semiconductor. The gate refers to the gate electrode.

The names of the source and drain of the transistor are interchanged according to the conductivity type of the transistor and the level of the potential applied to each terminal. Generally speaking, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. On the other hand, in a p-channel transistor, the terminal to which a low potential is applied is called a drain, and the terminal to which a high potential is applied is called a source. In this specification, although in some cases it is assumed that the source and drain are fixed to describe the connection relationship of the transistors for convenience, the names of the source and the drain are actually interchanged according to the above-mentioned potential relationship.

The wirings VPD and VPR are wirings supplied with a predetermined potential, and are used as power supply lines. The potential supplied to the wirings VPD and VPR may be either a high power supply potential or a low power supply potential (ground potential, etc.). Here, as an example, a case where the wiring VPD is a high-potential power supply line and the wiring VPR is a low-potential power supply line will be described. That is, the high power supply potential VDD is supplied to the wiring VPD, and the low power supply potential VSS is supplied to the wiring VPR. The wirings VPD and VPR can also be used in common in all the pixels 21.

The photoelectric conversion element 101 has a function of converting irradiated light into an electric signal. As the photoelectric conversion element 101, an element capable of obtaining a photocurrent corresponding to the irradiated light can be used. As specific examples of the photoelectric conversion element 101, PN type photodiode, PIN type photodiode, avalanche type diode, NPN embedded type diode, Schottky type diode, photoelectricity Crystals, X-ray photoconductors and infrared sensors, etc. In addition, as the photoelectric conversion element 101, an element containing selenium in the photoelectric conversion layer may also be used. Here, a photodiode is used as the photoelectric conversion element 101. The anode of the photodiode is connected to one of the source and drain of the transistor 102, and the cathode is connected to the wiring VPD. In the case where the low power supply potential VSS is supplied to the wiring VPD and the high power supply potential VDD is supplied to the wiring VPR, it is preferable to exchange the anode and the cathode of the photodiode.

The conduction state of the transistor 102 is controlled according to the potential of the wiring TX. When the transistor 102 is in the conductive state, the electrical signal output from the photoelectric conversion element 101 is supplied to the node FN. Therefore, the potential of the node FN depends on the amount of light irradiated to the photoelectric conversion element 101. Exposure can be performed while the transistor 102 is in the on state and the transistor 103 is in the off state.

The conduction state of the transistor 103 is controlled according to the potential of the wiring PR. When the transistor 103 is turned on, the potential of the wiring VPR is supplied to the node FN, and the potential of the node FN is reset. The potential of the wiring PR that turns the transistor 103 into the conductive state corresponds to the reset signal, and the period during which the reset signal is supplied to the wiring PR corresponds to the reset period. The potential of the wiring PR can be controlled by the circuit 30 and other drive circuits.

In this way, by supplying the potential of the wiring VPR to the node FN, the pixel 21 is reset. The potential of the wiring VPR for resetting the pixel 21 is also referred to as a reset potential.

The conduction state of the transistor 104 is controlled according to the potential of the node FN. Specifically, the resistance value between the source and the drain of the transistor 104 changes according to the potential of the node FN. Therefore, the potential supplied from the wiring SE to the wiring OUT by the transistor 104 is determined by the potential of the node FN.

In one embodiment of the present invention, the potential of the wiring SE is controlled based on the transistor 110 and the wiring VIN. The gate of the transistor 110 is connected to the wiring CSE, one of the source and drain is connected to the wiring SE, and the other of the source and drain is connected to the wiring VIN. Note that the transistor 110 is equivalent to the switch S in FIG. 1. When the wiring CSE is supplied with a potential (hereinafter, also referred to as a selection signal) that turns the transistor 110 into a conductive state, the wiring VIN and the wiring SE are in a conductive state, and the potential of the wiring VIN is supplied to the pixel 21 as a power supply potential. In this way, it is possible to select the pixel 21 from which the optical data signal is to be read out.

Here, the transistor 110 used to select the pixel 21 is commonly used in the pixels 21 in the same row and is arranged outside the pixel 21. Therefore, the number of transistors provided in the pixel 21 can be reduced, and the area of the pixel 21 can be reduced.

Next, the structure of the circuit 41 will be described.

The circuit 41 is a circuit included in the circuit 40 of FIG. 1. Here, a configuration example in which the circuit 41 is provided for each column of the pixel 21 will be described.

The circuit 41 includes a transistor 120. The gate of the transistor 120 is connected to the wiring BR, one of the source and drain is connected to the wiring VO, and the other of the source and drain is connected to the wiring OUT.

The conduction state of the transistor 120 is controlled according to the potential of the wiring BR. When the transistor 120 is turned on, the potential of the wiring VO is supplied to the wiring OUT, and the potential of the wiring OUT is reset. Then, when the power supply potential is supplied from the wiring VIN to the wiring SE through the transistor 110, the potential corresponding to the node FN is output to the wiring OUT. Here, the transistor 104 is used in the source follower, and a potential corresponding to the critical value of the transistor 104 from the potential of the node FN lowered is output to the wiring OUT.

The wiring VO is a wiring supplied with a predetermined potential, and is used as a power supply line. The potential supplied to the wiring VO may be either a high power supply potential or a low power supply potential (ground potential, etc.). Here, as an example, a case where the wiring VO is a low-potential power supply line will be described. That is, the low power supply potential VSS is supplied to the wiring VO.

In the case where the wiring BR continues to be supplied with a predetermined potential that causes the transistor 120 to be in a conductive state, the transistor 120 is used as a current source. In addition, a potential obtained by dividing the combined resistance of the resistance between the source and the drain of the transistor 120 and the resistance between the source and the drain of the transistor 104 into resistance division is output to the wiring OUT.

In one embodiment of the present invention, the wiring VIN is separated from the wiring VPR, and the wiring VIN can be supplied with a different potential from the wiring VPR. For example, even when the low power supply potential VSS is supplied to the wiring VPR, the high power supply potential VDD can be supplied to the wiring VIN. Thus, the source follower can be formed by the transistor 104 and the transistor 120, so that the optical data signal can be read out at a high speed. In addition, by adjusting the high power supply potential VDD supplied to the wiring VIN, the dynamic range of the output potential of the wiring OUT can be changed.

＜Example of reading job＞ Next, the operation when the optical data signal is read from the pixel 21 will be described.

When the optical data signal is read from the pixel 21 in FIG. 2, the potential of the signal line CSE is set to a high level, and the transistor 110 is turned on. Therefore, the high power supply potential VDD is supplied from the wiring VIN to the wiring SE. The resistance value between the source and the drain of the transistor 104 at this time corresponds to the potential of the node FN. Thus, the potential corresponding to the potential of the node FN is output from the wiring SE to the wiring OUT through the transistor 104. Therefore, the optical data signal can be read out from the pixel 21.

On the other hand, when the optical data signal from the pixel 21 is not read, the potential of the signal line CSE is set to a low level, and the transistor 110 is in the off state. At this time, since the power supply potential is not supplied from the wiring VIN to the wiring SE, the optical data signal is not output to the wiring OUT.

Note that in the period when the optical data signal is not read, the pixel 21 is preferably in a reset state. Specifically, the node FN is preferably at a low level, and the transistor 104 is preferably in an off state. As a result, the wiring SE and the wiring OUT can be in a non-conducting state, and the supply of an unintended potential to the wiring OUT can be prevented. In order to turn the transistor 104 into the off state, the transistor 103 may be turned on to supply the low power supply potential VSS of the wiring VPR to the node FN.

Through the above work, the optical data signal can be output to the wiring OUT. In addition, the optical data signal output to the wiring OUT is input to the circuit 40 and output from the circuit 40 to the outside.

Although there are no particular restrictions on the materials used for each transistor shown in FIG. 2, the transistors 102, 103, and 104 included in the pixel 21 are particularly preferably transistors whose channel formation regions include oxide semiconductors. (Hereinafter, also referred to as OS transistor). Compared with other semiconductors such as silicon, oxide semiconductors have a wide band gap and low intrinsic carrier density, so the off-state current of OS transistors is extremely small. Thus, by using an OS transistor for the pixel 21, it is possible to maintain a predetermined potential for a long period of time. The details of the oxide semiconductor and the OS transistor will be described in the fourth and seventh embodiments.

For example, in the case where the transistor 102 is an OS transistor, the charge movement between the node FN and the photoelectric conversion element 101 can be suppressed while the transistor 102 is in the off state. Therefore, the electric charge accumulated in the node FN can be maintained for an extremely long period of time, and the potential variation of the node FN can be prevented.

In addition, when the transistor 103 is an OS transistor, the charge movement between the node FN and the wiring VPR can be suppressed while the transistor 103 is in the off state. Therefore, the electric charge accumulated in the node FN can be maintained for an extremely long period of time, and the potential variation of the node FN can be prevented.

When the transistor 104 is an OS transistor, the charge movement between the wiring SE and the wiring OUT can be suppressed while the transistor 104 is in the off state, so that unintended potential fluctuations of the wiring OUT can be suppressed. Therefore, when the optical data signal of another pixel 21 connected to the same wiring OUT is read during the period in which the transistor 104 of a certain pixel 21 is in the off state, more accurate readout can be performed.

When the OS transistor is used as the transistor 102 and the transistor 103, even when the potential of the node FN is extremely small, the potential of the node FN can be reliably maintained and the optical data signal can be output accurately. Therefore, the illuminance range of light that can be detected in the pixels 21, that is, the dynamic range can be expanded.

Since the temperature dependence of the variation of the electrical characteristics of the OS transistor is smaller than that of a transistor whose channel formation region contains silicon (hereinafter, also referred to as a Si transistor), the OS transistor can be used in an extremely wide temperature range. Therefore, by using semiconductor devices including OS transistors, imaging devices suitable for installation in automobiles, airplanes, spacecraft, and the like can be realized.

When an element using a selenium-based material as a photoelectric conversion layer is used as the photoelectric conversion element 101, it is preferable to apply a relatively high voltage (for example, 10 V or more) so that the avalanche phenomenon is likely to occur. For example, it is preferable to set the potential of the wiring VPD to 10V or more, and to set the potential of the wiring VPR to 0V. Here, since the drain withstand voltage of the OS transistor is higher than that of the Si transistor, the OS transistors are preferably used for the transistors 102 to 104. In this way, by combining the OS transistor and the photoelectric conversion element using the selenium-based material, an imaging device capable of high-precision imaging and high reliability can be realized. Note that the details of the photoelectric conversion element using the selenium-based material as the photoelectric conversion layer will be described in Embodiment 6.

Note that the transistors 102, 103, and 104 are not limited to OS transistors. For example, a transistor whose channel formation region is formed in a part of a substrate containing a single crystal semiconductor and contains a single crystal semiconductor in the channel formation region (hereinafter, also referred to as a single crystal transistor) can be used. As a substrate including a single crystal semiconductor, a single crystal silicon substrate, a single crystal germanium substrate, or the like can be used. Due to the high current supply capability of the single crystal transistor, the working speed of the pixel 21 can be increased by using the above-mentioned transistor to form the pixel 21.

In addition, as the transistors 102, 103, and 104, a transistor whose channel formation region other than the OS transistor contains a non-single crystal semiconductor (hereinafter, also referred to as a non-single crystal transistor) may also be used. Examples of non-single crystal semiconductors other than OS transistors include non-single crystal silicon such as amorphous silicon, microcrystalline silicon, and polycrystalline silicon; non-single crystal germanium such as amorphous germanium, microcrystalline germanium, and polycrystalline germanium.

As the transistors 110 and 120, the above-mentioned OS transistors, single crystal transistors, non-single crystal transistors, etc. can be suitably used.

Here, since the transistor 110 is connected to a plurality of pixels 21 (m pixels 21 in FIG. 1 ), the transistor 110 is required to have a high current supply capability. Therefore, it is preferable to use a single crystal transistor with high current supply capability as the transistor 110. Therefore, the power supply potential can be easily supplied to the plurality of pixels 21 from the wiring VIN. At this time, the transistors 102 to 104 are preferably laminated on the transistor 110. Therefore, it is possible to suppress an increase in the area caused by the placement of the transistor 110. The details of the structure of the laminated transistor will be described in the fourth embodiment.

In the case of using a transistor containing the same semiconductor material as the transistors 102 to 104 as the transistor 110 (OS transistor, etc.), the channel width of the transistor 110 is preferably larger than the channel width of the transistors 102 to 104. As a result, the current supply capability of the transistor 110 can be improved.

＜Working example of semiconductor device 10＞ Next, a specific operation example of the semiconductor device 10 will be described.

Here, the pixels 21 [1, 1], [1, 2] as the pixels in the first row and the pixels 21 [2, 1], [2, 2] as the pixels in the second row shown in FIG. 3 will be explained. Working example. In FIG. 3, the wirings TX connected to the pixels 21 [1, 1], [1, 2], and connected to the pixels 21 [2, 1], [2, 2] are referred to as TX[1], TX[ 2]. The transistor 110 connected to the wiring SE[1] and the wiring SE[2] are referred to as a transistor 110[1] and a transistor 110[2], respectively. The wiring CSE connected to the transistor 110[1] and the transistor 110[2] are referred to as wiring CSE[1] and wiring CSE[2], respectively. The nodes FN in pixels 21 [1, 1], [1, 2], [2, 1], [2, 2] are called node FN[1, 1], node FN[1, 2], node FN[2,1], node FN[2,2]. The circuit 41 connected to the wiring OUT[1] and the wiring OUT[2] is referred to as a circuit 41[1] and a circuit 41[2], respectively.

FIG. 4 shows a timing chart of the semiconductor device 10 shown in FIG. 3. Note that the period Ta in FIG. 4 is a period during which reset, exposure, and readout are performed in the pixels in the first row, and the period Tb is a period during which reset, exposure, and readout are performed in pixels in the second row.

First, in the period T1, the potential of the wiring PR becomes a high level. As a result, the transistor 103 is turned on in all the pixels 21, and the potential (low level) of the wiring VPR is supplied to the node FN. Therefore, the potentials of the nodes FN[1,1], [1,2], [2,1], and [2,2] are reset to a low level. In addition, in all the pixels 21, the transistor 104 is turned off. Through the above work, the pixels 21 [1, 1], [1, 2], [2, 1], [2, 2] are reset.

In addition, in the period T1, the potential of the wiring TX[1] becomes a high level, and the transistors 102 in the pixels 21 [1, 1] and [1, 2] are turned on. Therefore, the photoelectric conversion element 101 and the node FN are in a conductive state.

Next, in the period T2, the potential of the wiring PR becomes a low level, and the transistors 103 in all the pixels 21 are turned off. As a result, the node FN becomes a floating state. In addition, the potential of the node FN[1, 1] and the node FN[1, 2] rises in accordance with the amount of light irradiated to the photoelectric conversion element 101. Here, the case where the potential of the node FN[1, 1] rises larger than that of the node FN[1, 2] is shown. Therefore, the light irradiated to the photoelectric conversion element 101 is converted into an electrical signal, and exposure can be performed in the pixels 21 [1, 1], [1, 2]. The period T2 is also referred to as the exposure period of the pixels 21 [1, 1] and [1, 2].

Next, in the period T3, the potential of the wiring TX[1] becomes a low level, and the transistors 102 in the pixels 21 [1, 1] and [1, 2] are turned off. Thereby, the potentials of the nodes FN[1,1] and the nodes FN[2,2] are maintained, and the exposure period of the pixels 21[1,1] and [1,2] ends.

Next, in the period T4, when the potential of the wiring BR becomes a high level, the transistor 120 is turned on, and the potential of the wiring VO is supplied to the wiring OUT[1] and the wiring OUT[2]. Here, since the potential of the wiring VO is at a low level, the potentials of the wiring OUT[1] and the wiring OUT[2] are at a low level.

Next, in the period T5, the potential of the wiring BR becomes a low level, and the transistor 120 is turned off. In addition, the potential of the wiring CSE[1] becomes a high level, and the transistor 110[1] becomes a conductive state. As a result, the potential of the wiring VIN is supplied to the wiring SE[1], and the potential of the wiring SE[1] becomes a high level.

Note that although the potential of the wiring BR is changed to control the potential of the wiring OUT here, it is also possible to always supply a predetermined potential to the wiring BR. In this case, the transistor 120 is used as a current source, and the potential of the wiring OUT is determined according to the potential of the wiring BR.

Here, the wiring SE[1] is used as a power supply line for the pixels 21 [1, 1], [1, 2]. Specifically, the potential of the wiring SE[1] is supplied to the transistor 104 serving as an amplifying transistor. Thereby, the potentials of the wiring OUT[1] and the wiring OUT[2] become potentials corresponding to the potentials of the node FN[1, 1] and the node FN[1, 2], respectively. At this time, the potentials of the wiring OUT[1] and the wiring OUT[2] correspond to the optical data signals of the pixel 21[1,1] and the pixel 21[1,2], respectively. In this way, in the period T5, the transistor 110 [1] is used as a selection transistor, and has the function of selecting the pixel 21 for reading the optical data signal.

In addition, in the period T5, the pixels 21 [2, 1] and [2, 2] are in the reset state. Specifically, the nodes FN[2,1] and [2,2] are at a low level, and the transistors 104 of the pixel 21[2,1] and the pixel 21[2,2] are in the off state. Therefore, the wiring SE[2] and the wiring OUT[1], [2] are in a non-conducting state. As a result, it is possible to prevent the potential of the wiring OUT[1], [2] from fluctuating due to the potential of the wiring SE[2] when the optical data signal is read from the pixels 21 [1, 1], [1, 2].

Next, in the period T6, the potential of the wiring CSE[1] becomes a low level, and the transistor 110[1] is turned off. As a result, the supply of the power supply potential to the wiring SE[1] is stopped, and the reading of the optical data signal ends.

Through the above-mentioned work, reset, expose and read out the pixels in the first row.

Next, in the period T7, the potential of the wiring PR becomes a high level. As a result, the transistor 103 is turned on in all the pixels 21, and the potential (low level) of the wiring VPR is supplied to the node FN. Therefore, the potentials of the nodes FN[1,1], [1,2], [2,1], and [2,2] are reset to a low level. In addition, in all the pixels 21, the transistor 104 is turned off. Through the above work, the pixels 21 [1, 1], [1, 2], [2, 1], [2, 2] are reset.

In addition, in the period T7, the potential of the wiring TX[2] becomes a high level, and the transistors 102 in the pixels 21 [2, 1] and [2, 2] are turned on. Therefore, the photoelectric conversion element 101 and the node FN are in a conductive state.

Next, in the period T8, the potential of the wiring PR becomes a low level, and the transistors 103 in all the pixels 21 are turned off. As a result, the node FN becomes a floating state. In addition, the potential of the node FN[2, 1] and the node FN[2, 2] rises in accordance with the amount of light irradiated to the photoelectric conversion element 101. Here, it is shown that the rise of the potential of the node FN[2,1] is smaller than that of the node FN[2,2]. Therefore, the light irradiated to the photoelectric conversion element 101 is converted into an electric signal, and exposure can be performed in the pixels 21 [2, 1], [2, 2]. The period T8 is also referred to as the exposure period of the pixels 21 [2, 1] and [2, 2].

Next, in the period T9, the potential of the wiring TX[2] becomes a low level, and the transistors 102 in the pixels 21 [2, 1] and [2, 2] are turned off. Thereby, the potentials of the nodes FN[2,1] and the nodes FN[2,2] are maintained, and the exposure period of the pixels 21[2,1] and [2,2] ends.

Next, in the period T10, when the potential of the wiring BR becomes a high level, the transistor 120 is turned on, and the potential of the wiring VO is supplied to the wiring OUT[1] and the wiring OUT[2]. Here, since the potential of the wiring VO is at a low level, the potentials of the wiring OUT[1] and the wiring OUT[2] are at a low level.

Next, in the period T11, the potential of the wiring BR becomes a low level, and the transistor 120 is turned off. In addition, the potential of the wiring CSE[2] becomes a high level, and the transistor 110[2] becomes a conductive state. As a result, the potential of the wiring VIN is supplied to the wiring SE[2], and the potential of the wiring SE[2] becomes a high level.

Note that although the potential of the wiring BR is changed to control the potential of the wiring OUT here, it is also possible to always supply an arbitrary potential to the wiring BR. In this case, the transistor 120 is used as a current source, and the potential of the wiring OUT is determined according to the potential of the wiring BR.

Here, the wiring SE[2] is used as a power supply line for the pixels 21 [2, 1], [2, 2]. Specifically, the potential of the wiring SE[2] is supplied to the transistor 104 serving as an amplifying transistor. Thereby, the potentials of the wiring OUT[1] and the wiring OUT[2] become potentials corresponding to the potentials of the node FN[2,1] and the node FN[2,2], respectively. At this time, the potentials of the wiring OUT[1] and the wiring OUT[2] respectively correspond to the optical data signals of the pixel 21[2,1] and the pixel 21[2,2]. In this way, in the period T11, the transistor 110[2] is used as a selection transistor, and has the function of selecting the pixel 21 for reading the optical data signal.

In addition, in the period T11, the pixels 21 [1, 1] and [1, 2] are in the reset state. Specifically, the nodes FN[1,1] and [1,2] are at a low level, and the transistor 104 of the pixel 21[1,1] and the pixel 21[1,2] are in the off state. Therefore, the wiring SE[1] and the wiring OUT[1], [2] are in a non-conducting state. As a result, it is possible to prevent the potential of the wiring OUT[1], [2] from fluctuating due to the potential of the wiring SE[1] when the optical data signal is read from the pixels 21 [2, 1], [2, 2].

Next, in the period T12, the potential of the wiring CSE[2] becomes a low level, and the transistor 110[2] is turned off. As a result, the supply of the power supply potential to the wiring SE[2] is stopped, and the reading of the optical data signal ends.

Through the above-mentioned work, reset, expose and read out the pixels in the second row.

Next, in the period T13, the potential of the wiring PR becomes a high level. As a result, the transistor 103 is turned on in all the pixels 21, and the potential of the node FN is reset to a low level. After that, by the same work as the above-mentioned work, the exposure and readout of the pixels 21 on the third row and later, and the reset, exposure, and readout of the pixels 21 on the fourth row and later are performed.

In this way, in one embodiment of the present invention, a switch for selecting the pixel 21 is commonly used in the pixels 21 in the same row, and the switch is provided outside the pixel portion 20. Therefore, it is not necessary to provide a switch for selecting the pixel 21 and a power supply line connected to the switch in the pixel portion 20, and thus the area of the pixel portion 20 can be reduced.

In one embodiment of the present invention, the wiring VIN used as a power supply line for selecting the pixel 21 is provided outside the pixel portion 20. Therefore, even if the wiring VIN is configured by a wiring different from other power supply lines (wiring VPR, etc.) connected to the pixel 21, it is possible to suppress an increase in the area of the pixel portion 20. In addition, the wiring VIN can be supplied with a different potential from other power supply lines connected to the pixels 21. Therefore, the power supply potential for reading out the optical data signal can be freely set, and the design flexibility and versatility of the semiconductor device 10 can be improved.

In this embodiment mode, an embodiment of the present invention is described. However, one embodiment of the present invention is not limited to this. That is, since various aspects of the invention are described in this embodiment, one embodiment of the present invention is not limited to a specific aspect. For example, although an example of a semiconductor device in which switches commonly used in pixels in the same row are provided outside the pixel portion is shown as one embodiment of the present invention, one embodiment of the present invention is not limited to this. Depending on the situation or situation, one embodiment of the present invention may have a structure in which the switches are not used in common in the same row, or may have a structure in which the switches are provided inside the pixel portion. In addition, although an example of a semiconductor device that uses a wiring different from the power supply line connected to the pixel to form a commonly used switch and a power supply line connected thereto is shown as an embodiment of the present invention, one embodiment of the present invention is not limited Here. In an embodiment of the present invention, depending on the situation or situation, these power lines may also be the same wiring.

Although this embodiment describes the work of performing exposure for each row, a global shutter method can also be used: Exposure is performed in multiple rows of pixels 21 (the largest is all pixels 21) at the same time, and then press Each row is read out in turn. In this case, an image with less distortion can be obtained. Here, in the global shutter method, the period from exposure to readout (that is, the period during which the charge is held at the node FN) varies according to the row in which the pixels 21 are arranged. Therefore, when the global shutter method is used, the change in the potential of the node FN that occurs with the passage of time is preferably small. Here, by using the OS transistor in the pixel 21, the electric charge accumulated in the node FN can be maintained for an extremely long period of time, so even if the global shutter method is used, the optical data signal can be read out accurately.

This embodiment mode can be combined with descriptions of other embodiments as appropriate. Therefore, the content described in this embodiment (or a part of it) can be applied to, combined with, or replaced with other content described in this embodiment (it can also be a part of the content) and/or in The content described in one or more other implementations (may also be part of the content). Note that the content described in the embodiments refers to the content described using various drawings in each embodiment or the content described in the article of the specification. In addition, by combining the drawing (may be a part of it) shown in one embodiment with other parts of the drawing, the other drawing (may be a part of it) shown in this embodiment, and/ Or a combination of the figures shown in one or more other embodiments (or a part of them) can form more figures. The same applies to the following embodiments.

Embodiment 2 In this embodiment, an example of the structure of a pixel according to an embodiment of the present invention will be described.

<Example of pixel layout> FIG. 5 shows an example of the layout of the pixels 21 that can be used in the above-described embodiment. Note that in FIG. 5, the wiring, the conductive layer, and the semiconductor layer represented by the same hatching can be formed by the same process and using the same material.

The pixel 21 shown in FIG. 5 includes a transistor 102, a transistor 103, a transistor 104, and a capacitor 105. Regarding the connection relationship of each element, reference can be made to the description of FIG. 2, and thus detailed description is omitted. Note that although the photoelectric conversion element 101 is not shown in FIG. 5, the photoelectric conversion element 101 is connected to the conductive layer 250.

The semiconductor layer 221 is used as the active layer of the transistor 102 and the transistor 103. In other words, the semiconductor layer 221 is commonly used in the transistor 102 and the transistor 103. In addition, the semiconductor layer 222 is used as an active layer of the transistor 104.

The semiconductor layer 221 is connected to the conductive layer 231 and the conductive layer 232. The conductive layer 231 is connected to the conductive layer 250 through the opening 251. The conductive layer 232 is connected to the conductive layer 212 through the opening 255. In addition, the semiconductor layer 221 is connected to the conductive layer 243 through the opening 255.

The conductive layer 231 is used as one of the source and drain of the transistor 102. The conductive layer 232 is used as one of the source and drain of the transistor 103. The conductive layer 243 is used as the other of the source and drain of the transistor 102, the other of the source and drain of the transistor 103, the gate of the transistor 104, and one electrode of the capacitor 105.

The semiconductor layer 222 is connected to the conductive layer 233 and the conductive layer 234. The conductive layer 233 is connected to the conductive layer 202 through the opening 256. The conductive layer 234 is connected to the conductive layer 211 through the opening 257.

The conductive layer 233 is used as one of the source and drain of the transistor 104. The conductive layer 234 is used as the other of the source and drain of the transistor 104.

Here, the conductive layer 212 corresponds to the wiring VPR, the conductive layer 202 corresponds to the wiring SE, and the conductive layer 211 corresponds to the wiring OUT. In addition, the node to which the semiconductor layer 221 and the conductive layer 243 are connected corresponds to the node FN.

As the semiconductor layer 221 and the semiconductor layer 222, various single crystal semiconductor layers, non-single crystal semiconductor layers, etc. can be used, and it is particularly preferable to use an oxide semiconductor layer. In this case, the transistors 102 to 104 are OS transistors.

The conductive layer 241 is connected to the conductive layer 203 through the opening 252. The conductive layer 241 is used as the gate electrode of the transistor 102. In addition, the conductive layer 241 may be formed of a part of the conductive layer 203. Here, the conductive layer 203 corresponds to the wiring TX.

The conductive layer 242 is connected to the conductive layer 204 through the opening 254. The conductive layer 242 is used as the gate electrode of the transistor 103. In addition, the conductive layer 242 may be formed of a part of the conductive layer 204. Here, the conductive layer 204 corresponds to the wiring PR.

The conductive layer 201 includes a region overlapping the conductive layer 243 via an insulating layer (not shown). The conductive layer 201 is used as the other electrode of the capacitor 105. Here, the conductive layer 201 corresponds to the wiring VPD.

Although the transistors 102, 103, and 104 are top gate type transistors in FIG. 5, the transistors 102, 103, and 104 may also be top gate type transistors or bottom gate type transistors.

In addition, although FIG. 5 shows a structure in which semiconductor layers 221, 222, conductive layers 231 to 234, conductive layers 241 to 243, conductive layers 211, 212, conductive layers 201 to 204, and a conductive layer 250 are sequentially stacked, each layer The upper and lower relationship is not limited to this, but can be set freely.

＜Variation of pixel＞ Next, a modification example of the pixel 21 described in the first embodiment will be described.

The pixel 21 may also have the structure shown in FIG. 6A. The pixel 21 shown in FIG. 6A is different from FIG. 2 in that the anode of the pixel 21 shown in FIG. 6A and the photoelectric conversion element 101 is connected to the wiring VPD, and the cathode is connected to one of the source and drain of the transistor 102. In FIG. 6A, the wiring VPD is used as a low-potential power supply line, and the wiring VPR is used as a high-potential power supply line.

In one embodiment of the present invention, the transistor 104 is preferably turned off when the potential of the wiring VPR, which is the reset potential, is supplied to the node FN. Therefore, in FIG. 6A, the transistor 104 is preferably turned off when the transistor 104 is a p-channel type transistor and a high-level potential is supplied from the wiring VPR to the node FN.

In addition, the pixel 21 may have the structure shown in FIG. 6B. The pixel 21 shown in FIG. 6B is different from that in FIG. 2 in that the pixel 21 shown in FIG. 6B includes a plurality of photoelectric conversion elements 101 and a plurality of transistors 102. The first terminal of the photoelectric conversion element 101a is connected to one of the source and drain of the transistor 102a, and the second terminal is connected to the wiring VPD. The first terminal of the photoelectric conversion element 101b is connected to one of the source and drain of the transistor 102b, and the second terminal is connected to the wiring VPD. The gate of the transistor 102a is connected to the wiring TXa, and the gate of the transistor 102b is connected to the wiring TXb. The other of the source and drain of the transistor 102a and the other of the source and the drain of the transistor 102b are connected to the node FN.

The gate of the transistor 102a and the gate of the transistor 102b are respectively connected to different wirings, so the exposure by the photoelectric conversion element 101a and the exposure by the photoelectric conversion element 101b are independently controlled. By adopting this structure, two photoelectric conversion elements can be used for exposure in one pixel. Note that the number of photoelectric conversion elements provided in the pixel 21 is not particularly limited, and it may be three or more.

In addition, the pixel 21 may have the structure shown in FIG. 6C. The circuit shown in FIG. 6C has a structure in which the transistor 103 in FIG. 2 is omitted. The anode of the photoelectric conversion element 101 is connected to one of the source and drain of the transistor 102, and the cathode is connected to the wiring VPR.

When resetting the pixel 21 (for example, the operations corresponding to the periods T1 and T7 in FIG. 4), the potential of the wiring VPR is set to a low level, and the potential of the wiring TX is set to a high level. Therefore, the photoelectric conversion element 101 is forward biased, and the potential of the node FD is reset to a low level. After resetting the node FD, the potential of the wiring VPR can be set to a high level.

In addition, the pixel 21 may also have the structure shown in FIG. 6D. The pixel 21 shown in FIG. 6D differs from the pixel 21 shown in FIG. 6C in that the pixel 21 shown in FIG. One of the connections.

When the reset operation of the pixel 21 (for example, the operation corresponding to the periods T1 and T7 in FIG. 4) is performed, the potentials of the wiring VPR and the wiring TX are set to a high level. Therefore, the photoelectric conversion element 101 is forward biased, and the potential of the node FD is reset to a high level. After resetting the node FD, the potential of the wiring VPR may be set to a low level.

In one embodiment of the present invention, the transistor 104 is preferably turned off by supplying the potential of the wiring VPR as the reset potential to the node FN. Therefore, in FIG. 6D, the transistor 104 is preferably turned off when the transistor 104 is a p-channel type transistor and the potential of the node FN is reset to a high level.

In FIG. 2, the transistor 102 may also be omitted. FIG. 7A shows a structure in which the transistor 102 is omitted in FIG. 2, and FIG. 7B shows a structure in which the transistor 102 is omitted in FIG. 6A.

In the transistor used for the pixel 21, in addition to the first gate electrode (hereinafter, also referred to as a front gate), a second gate electrode (hereinafter, also referred to as a back gate) may also be provided. 8A to 8D show structures in which back gates are provided in the transistors 102, 103, and 104.

FIG. 8A shows a structure in which a back gate connected to the front gate is provided in the transistors 102, 103, and 104 in FIG. 2 and the back gate is supplied with the same potential as the front gate. FIG. 8B shows a structure in which the back gate connected to the front gate is provided in the transistors 102, 103, and 104 in FIG. 6A, and the back gate is supplied with the same potential as the front gate. By adopting the above structure, the on-state currents of the transistors 102, 103, and 104 can be increased, so that high-speed imaging can be realized.

FIG. 8C shows a structure in which a back gate connected to the wiring VPR is provided in the transistors 102, 103, and 104 in FIG. 2 and a fixed potential is supplied to the back gate. Here, the ground potential is supplied to the wiring VPR. FIG. 8D shows a structure in which a back gate connected to the wiring VPD is provided in the transistors 102, 103, and 104 in FIG. 6A, and a fixed potential is supplied to the back gate. Here, the ground potential is supplied to the wiring VPD. Therefore, it is possible to control the threshold voltages of the transistors 102, 103, and 104, thereby enabling highly reliable imaging.

Note that although FIG. 8C shows a structure in which the back gates of the transistors 102, 103, and 104 are connected to the wiring VPR, and FIG. 8D shows a structure in which the back gates of the transistors 102, 103, and 104 are connected to the wiring VPD, the back gate The pole can also be connected to other wiring supplied with a fixed potential. In addition, the pixel 21 shown in FIGS. 6B to 6D, 7A, and 7B can also be provided with a back gate in the same manner.

The transistors 102, 103, and 104 may all have any structure in which the back gate is supplied with the same potential as the front gate, the back gate is supplied with a fixed potential, and the back gate is not provided. In other words, one pixel 21 may also include more than two types of transistors.

In FIGS. 2 and 6A to 8D, a plurality of pixels may also use the elements included in the pixel 21 in common. FIG. 9 shows the structure of the pixel portion 20 in which four pixels 21 use the transistor 103, the transistor 104, and the capacitor 105 in FIG. 2 in common. In FIG. 9, four transistors 102 are connected to the node FN, and the node FN is connected to the transistor 103, the transistor 104, and the capacitor 105. By adopting the above structure, the number of elements in the pixel portion 20 can be reduced.

Note that although FIG. 9 shows a structure in which pixels 21 in different rows use transistors and capacitors in common, it is also possible to have a structure in which pixels 21 in different columns use transistors and/or capacitors in common. In addition, although the structure in which four pixels use the transistor 103, the transistor 104, and the capacitor 105 in common is shown here, the number of pixels that use the elements in common is not limited to this, and may also be two pixels, three pixels, or More than five pixels. In addition, the same structure can also be applied to the pixel 21 shown in FIGS. 6A to 8D.

The structures shown in FIGS. 2 and 6A to 9 can be freely combined.

This embodiment mode can be combined with descriptions of other embodiments as appropriate.

Implementation Mode 3 In this embodiment mode, an imaging device using a semiconductor device according to an embodiment of the present invention will be described.

FIG. 10 shows an example of the structure of the imaging device 300. The imaging device 300 includes a photodetection unit 310 and a data processing unit 320.

The photodetection section 310 includes a pixel section 20, a circuit 30, a circuit 40, a circuit 50, and a circuit 60. As the pixel portion 20, the circuit 30, and the circuit 40, the pixel portion and the circuit described in the above-mentioned embodiment can be used.

The circuit 50 has a function of converting an analog signal input from the circuit 40 into a digital signal. The circuit 50 may be constituted by an A/D converter or the like.

The circuit 60 is a drive circuit having a function of reading out the digital signal input from the circuit 50. The circuit 60 can be configured using a selection circuit or the like. In addition, the selection circuit can be configured using a transistor or the like. As this transistor, an OS transistor or the like can be used.

The data processing unit 320 includes a circuit 321. The circuit 321 has a function of generating image data using the optical data signal generated in the photodetection unit 310.

In addition, a circuit having a function of displaying an image may be provided in the pixel unit 20. Thus, the imaging device 300 can also be used as a touch panel.

Next, an example of a driving method of the imaging device 300 shown in FIG. 10 will be described.

First, in the pixel 21, an optical data signal is generated by the method shown in Embodiment 1. The optical data signal generated in the pixel 21 is output to the circuit 40. The circuit 40 converts the optical data signal into an analog signal and outputs it to the circuit 50.

The analog signal output from the circuit 40 is converted into a digital signal in the circuit 50 and output to the circuit 60. And, in the circuit 60, the digital signal is read. The digital signal read in the circuit 60 is used for processing in the circuit 321 and the like.

This embodiment mode can be combined with descriptions of other embodiments as appropriate.

Embodiment 4 In this embodiment mode, an example of the structure of an element that can be used in the semiconductor device 10 will be described.

11A to 11C show structural examples of transistors and photoelectric conversion elements that can be used in the semiconductor device 10. Note that in this embodiment, an example in which a photodiode is used as a photoelectric conversion element is described.

＜Structure example 1＞ FIG. 11A shows an example of the structure of a transistor 801, a transistor 802, and a photodiode 803. The transistor 801 is connected to the transistor 802 through the wiring 819 and the conductive layer 823, and the transistor 802 is connected to the photodiode 803 through the conductive layer 830.

The transistor 801 and the transistor 802 can be freely applied to the transistors shown in FIGS. 2, 3, and 6A to 9 or other transistors included in the semiconductor device 10. For example, the transistor 801 can be used as the transistors 110 and 120 shown in FIGS. 2 and 3, and the transistor 802 can be used as the transistor 102 to the transistors shown in FIGS. 2, 3, and 6A to 9 104 and so on. In addition, the photodiode 803 can be used as the photoelectric conversion element 101 shown in FIGS. 2, 3, and 6A to 9.

[Transistor 801] First, the transistor 801 will be explained.

The transistor 801 is formed using a semiconductor substrate 810 and includes an element separation layer 811 on the semiconductor substrate 810 and an impurity region 812 formed in the semiconductor substrate 810. The impurity region 812 has the function of a source region or a drain region of the transistor 801, and a channel region is formed between the impurity regions 812. In addition, the transistor 801 includes an insulating layer 813 and a conductive layer 814. The insulating layer 813 has the function of the gate insulating layer of the transistor 801, and the conductive layer 814 has the function of the gate electrode of the transistor 801. Note that sidewalls 815 may also be formed on the sides of the conductive layer 814. Furthermore, an insulating layer 816 having a function of a protective layer and an insulating layer 817 having a function of a planarizing film may be formed on the conductive layer 814.

A silicon substrate is used for the semiconductor substrate 810. As the substrate material, in addition to silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, aluminum gallium arsenide, indium phosphide, gallium nitride, and organic semiconductors can also be used.

The element isolation layer 811 can be formed by a LOCOS (Local Oxidation of Silicon) method, an STI (Shallow Trench Isolation) method, or the like.

The impurity region 812 is a region containing an impurity element that imparts conductivity to the material of the semiconductor substrate 810. When a silicon substrate is used as the semiconductor substrate 810, the n-type conductivity impurities include, for example, phosphorus or arsenic, and the p-type conductivity impurities include, for example, boron, aluminum, and gallium. . An impurity element can be added to a predetermined region of the semiconductor substrate 810 using an ion implantation method, an ion doping method, or the like.

The insulating layer 813 can include aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and oxide One or more insulating layers in tantalum. In addition, the insulating layer 813 may also be constructed using a laminated layer including one or more insulating layers among the above-mentioned materials.

As the conductive layer 814, a conductive film of aluminum, titanium, chromium, cobalt, nickel, copper, yttrium, zirconium, molybdenum, silver, manganese, tantalum, and tungsten can be used. In addition, alloys of the above-mentioned materials or conductive nitrides of the above-mentioned materials may also be used. In addition, a stack of multiple materials selected from the above-mentioned materials, alloys of the above-mentioned materials, and conductive nitrides of the above-mentioned materials may also be used.

The insulating layer 816 can be used including magnesium oxide, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. More than one insulating layer. In addition, the insulating layer 816 may also be constructed using a laminated layer including one or more insulating layers among the above-mentioned materials.

As the insulating layer 817, an insulating layer containing organic materials such as acrylic resin, epoxy resin, benzocyclobutene resin, polyimide, and polyamide can be used. In addition, the insulating layer 817 may also be constructed using a laminate of insulating layers containing the above-mentioned materials. In addition, the insulating layer 817 can also use the same material as the insulating layer 816.

Note that the impurity region 812 may adopt a structure in which the conductive layer 818 is connected to the wiring 819.

[Transistor 802] Next, the transistor 802 will be described. Transistor 802 is an OS transistor.

The transistor 802 includes an oxide semiconductor layer 824 on the insulating layer 822, a conductive layer 825 on the oxide semiconductor layer 824, an insulating layer 826 on the conductive layer 825, and a conductive layer 827 on the insulating layer 826. The conductive layer 825 has the function of the source electrode or the drain electrode of the transistor 802. The insulating layer 826 functions as a gate insulating layer of the transistor 802. The conductive layer 827 has the function of the gate electrode of the transistor 802. Furthermore, an insulating layer 828 having a function of a protective layer and an insulating layer 829 having a function of a planarizing film may be formed on the conductive layer 827.

In addition, a conductive layer 821 may be formed under the insulating layer 822. The conductive layer 821 has the function of the second gate electrode (back gate electrode) of the transistor 802. When forming the conductive layer 821, an insulating layer 820 may be formed on the wiring 819 and a conductive layer 821 may be formed on the insulating layer 820. In addition, a part of the wiring 819 may be used as the back gate electrode of the transistor 802. For example, an OS transistor including a back gate electrode can be used for the transistors 102 to 104 in FIGS. 8A to 8D and so on.

For example, the transistor 802, when a certain transistor T includes a pair of gate electrodes with a semiconductor film therebetween, a signal A can be supplied to one of the gate electrodes, and a fixed potential Vb can be supplied to the other gate electrode.

The signal A is, for example, a signal used to control the conduction state/non-conduction state. The signal A may also be a digital signal having two potentials, the potential V1 or the potential V2 (V1>V2). For example, the potential V1 may be set to a high power supply potential and the potential V2 may be set to a low power supply potential. Signal A can also be an analog signal.

The fixed potential Vb is, for example, a potential used to control the threshold voltage VthA of the transistor T. The fixed potential Vb may be the potential V1 or the potential V2. At this time, there is no need to separately provide a potential generating circuit for generating the fixed potential Vb, so it is preferable. The fixed potential Vb may be a potential different from the potential V1 or the potential V2. By lowering the fixed potential Vb, the threshold voltage VthA can sometimes be increased. As a result, the drain current when the voltage Vgs between the gate and the source is 0V can be reduced, and the leakage current of the circuit including the transistor T can be reduced. For example, the fixed potential Vb can be made lower than the low power supply potential. By increasing the fixed potential Vb, the threshold voltage VthA can sometimes be lowered. As a result, the drain current when the voltage Vgs between the gate and the source is VDD can sometimes be increased, and the operating speed of the circuit including the transistor T can be increased. For example, the fixed potential Vb can be made higher than the low power supply potential.

In addition, the signal A may be supplied to one gate of the transistor T and the signal B may be supplied to the other gate. The signal B is, for example, a signal used to control the conduction state/non-conduction state of the transistor T. The signal B may also be a digital signal having two potentials: the potential V3 or the potential V4 (V3>V4). For example, the potential V3 can be set to a high power supply potential and the potential V4 can be set to a low power supply potential. Signal B can also be an analog signal.

In the case where both the signal A and the signal B are digital signals, the signal B may also be a signal having the same digital value as the signal A. At this time, sometimes the on-state current of the transistor T can be increased, and the operating speed of the circuit including the transistor T can be increased. At this time, the potential V1 of the signal A may be different from the potential V3 of the signal B. In addition, the potential V2 of the signal A may be different from the potential V4 of the signal B. For example, when the thickness of the gate insulating film corresponding to the back gate of the input signal B is greater than the gate insulating film corresponding to the gate of the input signal A, the potential amplitude (V3-V4) of the signal B can be made larger than The potential amplitude of signal A (V1-V2). As a result, the effects of the signal A and the signal B on the conduction state or the non-conduction state of the transistor T can be made approximately the same in some cases.

In the case where both the signal A and the signal B are digital signals, the signal B may also be a signal having a different digital value from the signal A. At this time, sometimes signal A and signal B can be used to control transistor T, and higher functions can be achieved. For example, when the transistor T is an n-channel transistor, the transistor is in the conducting state only when the signal A is at the potential V1 and the signal B is at the potential V3, or only when the signal A is at the potential V2 and the signal B is at When the transistor is in a non-conducting state at the potential V4, sometimes a single transistor can realize the functions of a NAND circuit or a NOR circuit. In addition, the signal B may also be a signal used to control the threshold voltage VthA. For example, the signal B may also have a different potential during the operation of the circuit including the transistor T and during the non-operation of the circuit. The signal B can also have different potentials according to the working mode of the circuit. At this time, the signal B may not switch the potential as frequently as the signal A.

When both signal A and signal B are analog signals, signal B can also be an analog signal with the same potential as signal A, an analog signal obtained by multiplying the potential of signal A by a constant, or adding a constant to signal A The potential of the signal A or the analog signal obtained by subtracting a constant from the potential of the signal A. At this time, sometimes by increasing the on-state current of the transistor T, the operating speed of the circuit including the transistor T can be increased. Signal B can also be an analog signal different from signal A. At this time, sometimes signal A and signal B can be used to control transistor T, and higher functions can be achieved.

It is also possible to make signal A a digital signal and make signal B an analog signal. It is also possible to make signal A an analog signal and make signal B a digital signal.

In addition, it is also possible to supply a fixed potential Va to one gate of the transistor T and a fixed potential Vb to the other gate. When a fixed potential is supplied to the two gates of the transistor T, the transistor T can sometimes be used as an element equivalent to the resistance element. For example, when the transistor T is an n-channel transistor, by increasing (decreasing) the fixed potential Va or the fixed potential Vb, the effective resistance of the transistor T can sometimes be reduced (increased). By increasing (decreasing) both the fixed potential Va and the fixed potential Vb, it is sometimes possible to obtain a lower (higher) effective resistance than a transistor with only one gate.

The insulating layer 822 can be used including magnesium oxide, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. More than one insulating layer. In addition, the insulating layer 822 may also be constructed using a laminated layer including one or more insulating layers among the above-mentioned materials. Note that the insulating layer 822 preferably has a function of being able to supply oxygen to the oxide semiconductor layer 824. This is because even if oxygen vacancies are included in the oxide semiconductor layer 824, the oxygen vacancies are filled by oxygen supplied from the insulating layer. As the treatment for supplying oxygen, for example, there is heat treatment and the like.

As the oxide semiconductor layer 824, an oxide semiconductor layer can be used. As the oxide semiconductor, indium oxide, tin oxide, gallium oxide, zinc oxide, In-Zn oxide, Sn-Zn oxide, Al-Zn oxide, Zn-Mg oxide, Sn-Mg oxide, In -Mg oxide, In-Ga oxide, In-Ga-Zn oxide, In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga-Zn oxide, Al-Ga-Zn oxide , Sn-Al-Zn oxide, In-Hf-Zn oxide, In-La-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide, In -Sm-Zn oxide, In-Eu-Zn oxide, In-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er -Zn oxide, In-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn oxide, In-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In -Al-Ga-Zn oxide, In-Sn-Al-Zn oxide, In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide. In-Ga-Zn oxide is particularly preferred.

Here, In-Ga-Zn oxide refers to an oxide containing In, Ga, and Zn as main components. Note that metal elements other than In, Ga, and Zn are sometimes included as impurities. The film composed of In-Ga-Zn oxide is also referred to as an IGZO film.

As the conductive layer 825, a conductive film of aluminum, titanium, chromium, cobalt, nickel, copper, yttrium, zirconium, molybdenum, silver, manganese, tantalum, and tungsten can be used. In addition, alloys of the above-mentioned materials or conductive nitrides of the above-mentioned materials may also be used. In addition, a stack of multiple materials selected from the above-mentioned materials, alloys of the above-mentioned materials, and conductive nitrides of the above-mentioned materials may also be used. Typically, it is particularly preferable to use titanium which is easily bonded to oxygen or tungsten which has a high melting point and allows a higher temperature in the subsequent process. In addition, a laminate of low-resistance copper or copper-manganese alloys and the above-mentioned materials can also be used. The conductive layer 825 uses a material that easily bonds with oxygen. When the conductive layer 825 and the oxide semiconductor layer 824 are in contact, a region including oxygen vacancies is formed in the oxide semiconductor layer 824. A small amount of hydrogen contained in the film diffuses into the oxygen defect, and the region becomes significantly n-type. The n-typed region can be used as a source region or a drain region of the transistor.

The insulating layer 826 may include aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and oxide One or more insulating layers in tantalum. In addition, the insulating layer 826 may also be constructed using a laminated layer including one or more insulating layers among the above-mentioned materials.

As the conductive layer 827, a conductive film of aluminum, titanium, chromium, cobalt, nickel, copper, yttrium, zirconium, molybdenum, silver, manganese, tantalum, and tungsten can be used. In addition, alloys of the above-mentioned materials or conductive nitrides of the above-mentioned materials may also be used. In addition, a stack of multiple materials selected from the above-mentioned materials, alloys of the above-mentioned materials, and conductive nitrides of the above-mentioned materials may also be used.

The insulating layer 828 can be used including magnesium oxide, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. More than one type of insulating film. In addition, the insulating layer 828 may also be constructed using a laminated layer including one or more insulating layers among the above-mentioned materials.

The insulating layer 829 may use organic materials including acrylic resin, epoxy resin, benzocyclobutene resin, polyimide, and polyamide. In addition, the insulating layer 817 may also be constructed using a laminate of insulating layers containing the above-mentioned materials. In addition, the insulating layer 829 can also use the same material as the insulating layer 828.

[Photodiode 803] Next, the photodiode 803 will be described.

The photodiode 803 is formed in such a manner that an n-type semiconductor layer 832, an i-type semiconductor layer 833, and a p-type semiconductor layer 834 are sequentially stacked. The i-type semiconductor layer 833 preferably uses amorphous silicon. In addition, the n-type semiconductor layer 832 and the p-type semiconductor layer 834 can use amorphous silicon or microcrystalline silicon containing conductivity-imparting impurities. Since the photodiode using amorphous silicon has a high sensitivity in the wavelength range of visible light, it is preferable. When the p-type semiconductor layer 834 is the light-receiving surface, the output current of the photodiode can be increased.

The n-type semiconductor layer 832 that functions as a cathode is connected to the conductive layer 825 of the transistor 802 through the conductive layer 830. In addition, the p-type semiconductor layer 834 that functions as an anode is connected to the wiring 837. In addition, the photodiode 803 may also adopt a structure in which the photodiode 803 is connected to other wiring via the wiring 831 or the conductive layer 836. Furthermore, an insulating layer 835 having the function of a protective film can also be formed.

As shown in FIG. 11A, by laminating the transistor 802 on the transistor 801, and laminating the photodiode 803 on the transistor 802, the area of the semiconductor device can be reduced. In addition, by adopting a structure in which the transistor 801, the transistor 802, and the photodiode 803 overlap each other, the area of the semiconductor device can be further reduced.

Note that although the structure in which the impurity region 812 is connected to the conductive layer 825 is shown in FIG. 11A, that is, one of the source and drain of the transistor 801 is connected to one of the source and drain of the transistor 802 However, the connection relationship between the transistor 801 and the transistor 802 is not limited to this. For example, as shown in FIG. 11B, a structure in which the conductive layer 814 is connected to the conductive layer 825 may also be adopted, that is, a structure in which the gate of the transistor 801 is connected to one of the source and drain of the transistor 802.

In addition, although not shown here, a structure in which the gate of the transistor 801 is connected to the gate of the transistor 802 or one of the source and drain of the transistor 801 is connected to the gate of the transistor 802 may also be adopted. Structure.

In addition, as shown in FIG. 11C, a structure in which the OS transistor is omitted and the photodiode 803 and the transistor 801 are connected can also be adopted. For example, in the case of using single crystal transistors as all the transistors in FIG. 2, the structure shown in FIG. 11C can be adopted. In this way, by omitting the OS transistor, the manufacturing process of the semiconductor device can be reduced.

＜Structure example 2＞ Although the structure in which the photodiode 803 is laminated on the transistor 802 is shown in FIGS. 11A to 11C, the position of the photodiode 803 is not limited to this. For example, as shown in FIG. 12A, the photodiode 803 may also be disposed between the transistor 801 and the transistor 802.

In addition, as shown in FIG. 12B, the photodiode 803 can also be arranged in the same layer as the transistor 802. In this case, the conductive layer 825 can be used as the source electrode or the drain electrode of the transistor 802 and the electrode of the photodiode 803.

In addition, as shown in FIG. 12C, the photodiode 803 can also be provided in the same layer as the transistor 801. In this case, the conductive layer 814 having the function of the gate electrode of the transistor 801 and the wiring 831 having the function of the electrode of the photodiode 803 can be formed at the same time using the same material.

＜Structure example 3＞ The semiconductor substrate 810 may also be used to form a plurality of transistors. FIG. 13A shows an example in which a semiconductor substrate 810 is used to form a transistor 804 and a transistor 805.

The transistor 804 includes an impurity region 842, an insulating layer 843 having a function of a gate insulating film, and a conductive layer 844 having a function of a gate electrode. The transistor 805 includes an impurity region 852, an insulating layer 853 having a function of a gate insulating film, and a conductive layer 854 having a function of a gate electrode. Since the structures and materials of the transistor 804 and the transistor 805 are the same as those of the transistor 801, detailed descriptions are omitted.

Here, the impurity region 842 contains an impurity element imparting a conductivity type opposite to that of the impurity region 852. That is, the transistor 804 has a polarity opposite to that of the transistor 805. In addition, as shown in FIG. 13A, the impurity region 842 may adopt a structure connected to the impurity region 852. In this way, a CMOS (Complementary Metal Oxide Semiconductor) inverter using the transistor 804 and the transistor 805 can be constructed.

By using the structure of FIG. 13A, the circuit 30, the circuit 40, the circuit 50, the circuit 60, and the data processing unit 320 in FIGS. 1 and 10 can be formed from a transistor using a semiconductor substrate 810, and these circuits can be laminated The pixel portion 20 formed by the OS transistor. As a result, the area of the semiconductor device can be reduced.

In addition, as shown in FIG. 13B, in a structure in which a transistor 807 as an OS transistor is laminated on a transistor 806 formed using a semiconductor substrate 810, a structure in which the impurity region 861 is connected to the conductive layer 862 can be adopted, that is, A structure in which one of the source and drain of the transistor 806 is connected to one of the source and the drain of the transistor 807. In this way, a CMOS inverter including a transistor formed using the semiconductor substrate 810 and an OS transistor can be constructed.

The transistor 806 formed using the semiconductor substrate 810 is easier to manufacture a p-channel type transistor than an OS transistor. Therefore, preferably, the transistor 806 is a p-channel type transistor and the transistor 807 is an n-channel type transistor. Thus, the CMOS inverter can be formed without forming two types of transistors with different polarities on the semiconductor substrate 810, and the manufacturing process of the semiconductor device can be reduced.

This embodiment mode can be combined with descriptions of other embodiments as appropriate.

Embodiment 5 In this embodiment, a configuration example of an imaging device to which a color filter or the like is added will be described.

14A is a cross-sectional view of an example of a method of adding color filters and the like to the structure shown in FIGS. 11A to 13B, etc., showing the area occupied by circuits corresponding to three pixels (pixel 21a, pixel 21b, pixel 21c) . An insulating layer 1500 is formed on the photodiode 803 formed in the layer 1100. As the insulating layer 1500, a silicon oxide film with high transparency to visible light or the like can be used. In addition, a structure in which silicon nitride films are laminated may also be adopted as the passivation film. In addition, a structure in which a dielectric film such as hafnium oxide is laminated may be adopted as the anti-reflection film.

A light shielding layer 1510 is formed on the insulating layer 1500. The light shielding layer 1510 has a function of preventing color mixing of light passing through the color filter. As the light shielding layer 1510, a metal layer such as aluminum and tungsten, or a structure in which this metal layer and a dielectric film used as an anti-reflection film are laminated can be used.

An organic resin layer 1520 used as a planarizing film is formed on the insulating layer 1500 and the light-shielding layer 1510, and filters are formed on the pixels 21a, 21b, and 21c in pairs with the pixels 21a, 21b, and 21c, respectively. Color chips 1530a, 1530b and 1530c. By assigning R (red), G (green), and B (blue) to the color filter 1530a, the color filter 1530b, and the color filter 1530c, respectively, a color image can be obtained.

The color filters 1530a, 1530b, and 1530c are provided with a microlens array 1540, and the light passing through a lens is irradiated to the photodiode through the color filter located under the lens.

In addition, a supporting substrate 1600 is provided in contact with the layer 1400. As the supporting substrate 1600, a semiconductor substrate such as a silicon substrate, a glass substrate, a metal substrate, and a rigid substrate such as a ceramic substrate can be used. In addition, an inorganic insulating layer or an organic resin layer serving as an adhesive layer may be formed between the layer 1400 and the supporting substrate 1600.

In the structure of the imaging device described above, the optical conversion layer 1550 may be used instead of the color filter 1530a, the color filter 1530b, and the color filter 1530c (see FIG. 14B). By using the optical conversion layer 1550, an imaging device that can obtain images in various wavelength ranges can be realized.

For example, by using a filter that blocks light below the wavelength of visible light as the optical conversion layer 1550, an infrared imaging device can be formed. In addition, by using a filter that blocks light below the wavelength of infrared rays as the optical conversion layer 1550, a far-infrared imaging device can be formed. In addition, an ultraviolet imaging device can be formed by using a filter that blocks light above the wavelength of visible light as the optical conversion layer 1550.

If a scintillator is used for the optical conversion layer 1550, an imaging device that obtains an image that visualizes the intensity of radiation, such as an X-ray imaging device for medical use, can be realized. When radiation such as X-rays passing through a photographed object is incident on the scintillator, the radiation is converted into light (fluorescence) such as visible light or ultraviolet light due to a phenomenon called photoluminescence. The image data is obtained by detecting the light by the photodiode 803.

The scintillator is composed of the following substances or materials: when it is irradiated by X-rays or gamma rays, a substance that absorbs its energy and emits visible light or ultraviolet light or a material containing the substance, such as Gd ₂ O ₂ S: Tb, Gd ₂ O ₂ S: Pr, Gd ₂ O ₂ S: Eu, BaFCl: Eu, NaI, CsI, CaF ₂ , BaF ₂ , CeF ₃ , LiF, LiI, ZnO and other materials and disperse the above materials in resin or Materials in ceramics.

This embodiment mode can be combined with descriptions of other embodiments as appropriate.

Embodiment 6 In this embodiment, another configuration example of the semiconductor device 10 will be described.

FIG. 15A shows an example of the structure of the pixel 21. In the pixel 21 in FIG. 15A, an element 900 including a selenium-based semiconductor is used as the photoelectric conversion element 101 in the pixel 21 shown in FIG. 2 and the like.

An element including a selenium-based semiconductor is an element capable of photoelectric conversion using the avalanche multiplication effect in which a plurality of electrons can be extracted from one irradiated photon by applying a voltage. Therefore, in the pixel 21 including the selenium-based semiconductor, electrons relative to the amount of incident light can be amplified, and a sensor with high sensitivity can be obtained. In a photoelectric conversion element using a selenium-based material as a photoelectric conversion layer, it is preferable to apply a relatively high voltage (for example, 10 V or more) so that the sudden collapse phenomenon is likely to occur. At this time, as the transistors 102 to 104, it is preferable to use an OS transistor with a high drain withstand voltage.

As the selenium-based semiconductor, a selenium-based semiconductor with an amorphous structure or a selenium-based semiconductor with a crystalline structure can be used. A selenium-based semiconductor with a crystalline structure can be obtained by performing a heat treatment after forming a selenium-based semiconductor with an amorphous structure. By making the grain size of the crystal structure of the selenium-based semiconductor smaller than the pixel pitch, the deviation of the characteristics of each pixel can be reduced, and the obtained image quality can be uniform, which is preferable.

Selenium-based semiconductors, especially selenium-based semiconductors with a crystalline structure, have the following characteristics: they have a light absorption coefficient in a wide wavelength range. Therefore, the selenium-based semiconductor with a crystal structure can be used as an imaging element in a wide wavelength range such as visible light, ultraviolet light, X-ray, and gamma rays, and the selenium-based semiconductor with a crystal structure can be used as a so-called direct conversion element. , The direct conversion element can directly convert light in the short wavelength range such as X-rays and gamma rays into electric charges.

FIG. 15B shows an example of the structure of the element 900. As shown in FIG. The element 900 includes a substrate 901, an electrode 902, a photoelectric conversion layer 903, and an electrode 904. The electrode 904 is connected to one of the source and drain of the transistor 102. Note that although an example in which the element 900 includes a plurality of photoelectric conversion layers 903 and a plurality of electrodes 904 and each of the plurality of electrodes 904 is connected to the transistor 102 is shown here, the number of photoelectric conversion layers 903 and electrodes 904 is not Special restrictions can be single or multiple.

Light enters the photoelectric conversion layer 903 through the substrate 901 and the electrode 902. Therefore, the substrate 901 and the electrode 902 are preferably transparent. As the substrate 901, a glass substrate can be used. In addition, as the electrode 902, indium tin oxide (ITO: Indium Tin Oxide) can be used.

The photoelectric conversion layer 903 contains selenium. As the photoelectric conversion layer 903, various selenium-based semiconductors can be used.

The photoelectric conversion layer 903 and the electrode 902 laminated on the photoelectric conversion layer 903 can be used without processing the shape of each pixel 21. Therefore, the manufacturing process for processing the shape can be reduced, and the manufacturing cost can be reduced and the manufacturing yield can be improved.

As an example of selenium-based semiconductors, chalcopyrite-based semiconductors can be cited. Specifically, CuIn _1-x Ga _x Se ₂ (x is 0 or more and 1 or less) (referred to as CIGS for short) can be used. CIGS can be formed by vapor deposition, sputtering, or the like.

When chalcopyrite-based semiconductors are used as selenium-based semiconductors, avalanche multiplication can occur by applying a voltage of several volts or more (about 5V to 20V). Therefore, by applying a voltage to the photoelectric conversion layer 903, it is possible to improve the linearity of the movement of signal charges due to light irradiation. By making the film thickness of the photoelectric conversion layer 903 1 µm or less, the applied voltage can be reduced. In addition, by using OS transistors for the transistors 102 to 104, the pixel 21 can be operated normally even when the above-mentioned voltage is applied.

Note that when the film thickness of the photoelectric conversion layer 903 is thin, dark current will flow when a voltage is applied. However, by providing the above-mentioned chalcopyrite-based semiconductor CIGS with a layer (hole Injecting into the barrier layer) can suppress the flow of dark current. FIG. 15C shows a structure in which the hole injection energy barrier layer 905 is provided in FIG. 15B.

As the hole injection barrier layer, an oxide semiconductor may be used. For example, gallium oxide may be used. The film thickness of the hole injection barrier layer is preferably smaller than the film thickness of the photoelectric conversion layer 903.

As described above, by forming the sensor using selenium-based semiconductors, a sensor with high sensitivity can be realized. Therefore, by combining with an embodiment of the present invention, imaging data with higher accuracy can be obtained.

This embodiment mode can be combined with descriptions of other embodiments as appropriate.

Embodiment 7 In this embodiment mode, the structure of a transistor that can be used in the above embodiment mode is described.

＜Structure example of transistor 1＞ FIG. 16A shows the structure of a transistor 400 that can be used in the above-described embodiment. A transistor 400 is formed on the insulating layer 401 with the insulating layer 402 and the insulating layer 403 interposed therebetween. Note that although the case where the transistor 400 is a transistor with a top gate structure is shown in this example, the transistor 400 may also be a transistor with a bottom gate structure.

In addition, as the transistor 400, a reverse staggered transistor or a forward staggered transistor may also be used. In addition, a dual gate type transistor having a structure in which a semiconductor layer in which a channel is formed is sandwiched by two gate electrodes may also be used. In addition, it is not limited to a transistor with a single gate structure, and a multi-gate transistor with multiple channel formation regions, such as a double gate transistor, can also be used.

In addition, as the transistor 400, a planar type, a FIN (fin) type, a TRI-GATE (tri-gate) type, or other structure transistors may also be used.

The transistor 400 includes: an electrode 443 that can be used as a gate electrode; an electrode 444 that can be used as one of a source electrode and a drain electrode; an electrode 445 that can be used as the other of a source electrode and a drain electrode; An insulating layer 411 that can be used as a gate insulating layer; and a semiconductor layer 421.

The insulating layer 402 is preferably formed using an insulating film having a function of preventing the diffusion of impurities such as oxygen, hydrogen, water, alkali metals, and alkaline earth metals. As the insulating film, there are silicon oxide, silicon oxynitride, silicon nitride, silicon oxynitride, gallium oxide, hafnium oxide, yttrium oxide, aluminum oxide, aluminum oxynitride, and the like. In addition, by using silicon nitride, gallium oxide, hafnium oxide, yttrium oxide, aluminum oxide, or the like as the insulating film, mixing of impurities diffused from the insulating layer 401 side into the semiconductor layer 421 can be suppressed. In addition, the insulating layer 402 can be formed by a sputtering method, a CVD method, an evaporation method, a thermal oxidation method, or the like. The insulating layer 402 can be formed using a single layer or a stacked layer of the above-mentioned materials.

The insulating layer 403 can use oxide materials such as aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide, or nitride Single layer or multilayer formation of nitride materials such as silicon, silicon oxynitride, aluminum nitride, and aluminum oxynitride. The insulating layer 403 can be formed by a sputtering method, a CVD method, a thermal oxidation method, a coating method, a printing method, or the like.

When an oxide semiconductor is used as the semiconductor layer 421, the insulating layer 402 is preferably formed using an insulating layer whose oxygen content exceeds the stoichiometric composition. The insulating layer whose oxygen content exceeds the stoichiometric composition is heated and part of the oxygen is detached. An insulating layer whose oxygen content exceeds the stoichiometric composition has an amount of oxygen desorption converted into oxygen atoms during TDS analysis of 1.0×10 ¹⁸ atoms/cm ³ or more, preferably 3.0×10 ²⁰ atoms/cm ³ or more. Note that the surface temperature of the layer in the above-mentioned TDS analysis is preferably 100°C or higher and 700°C or lower, or 100°C or higher and 500°C or lower.

In addition, an insulating layer whose oxygen content exceeds the stoichiometric composition can also be formed by adding oxygen to the insulating layer. The oxygen addition treatment can be performed by heat treatment in an oxygen atmosphere, an ion implantation device, an ion doping device, or a plasma treatment device. As the gas for adding oxygen, oxygen gas such as ¹⁶ O ₂ or ¹⁸ O ₂ , nitrous oxide gas, ozone gas, or the like can be used. Note that in this specification, the treatment of adding oxygen is sometimes referred to as "oxygen doping treatment".

The semiconductor layer 421 may be formed using a single crystal semiconductor, a polycrystalline semiconductor, a microcrystalline semiconductor, a nanocrystalline semiconductor, a semi-amorphous semiconductor (Semi Amorphous Semiconductor), an amorphous semiconductor, or the like. For example, amorphous silicon or microcrystalline germanium can be used. In addition, compound semiconductors such as silicon carbide, gallium arsenic, oxide semiconductors, and nitride semiconductors, organic semiconductors, and the like can also be used.

In this embodiment mode, an example in which an oxide semiconductor is used as the semiconductor layer 421 will be described. In addition, in this embodiment mode, a case where a stack of the semiconductor layer 421a, the semiconductor layer 421b, and the semiconductor layer 421c is used as the semiconductor layer 421 will be described.

The semiconductor layer 421a, the semiconductor layer 421b, and the semiconductor layer 421c may be formed using a material containing one or both of In and Ga. Typically, there are In-Ga oxide (containing In and Ga oxide), In-Zn oxide (containing In and Zn oxide), In-M-Zn oxide (containing In, element M and Zn) Oxide. Element M is one or more elements selected from Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf, and is a metal element that has a stronger bonding force with oxygen than that between In and oxygen ).

The semiconductor layer 421a and the semiconductor layer 421c are preferably formed using a material containing one or more of the same metal elements among the metal elements constituting the semiconductor layer 421b. By using this material, the interface between the semiconductor layer 421a and the semiconductor layer 421b and the interface between the semiconductor layer 421c and the semiconductor layer 421b can not easily generate an interface energy level. As a result, scattering and trapping of carriers in the interface are not prone to occur, and the field effect mobility of the transistor can be improved. In addition, the non-uniformity of the threshold voltage of the transistor can also be reduced. Therefore, a semiconductor device with good electrical characteristics can be realized.

The thickness of the semiconductor layer 421a and the semiconductor layer 421c is 3 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less. In addition, the thickness of the semiconductor layer 421b is 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less, and more preferably 3 nm or more and 50 nm or less.

In addition, when the semiconductor layer 421b is In-M-Zn oxide, and the semiconductor layer 421a and the semiconductor layer 421c are also In-M-Zn oxide, when the semiconductor layer 421a and the semiconductor layer 421c are set to In:M: Zn=x ₁ :y ₁ :z ₁ [atomic ratio], and the semiconductor layer 421b is set to In:M:Zn=x ₂ :y ₂ :z ₂ [atomic ratio], y ₁ /x ₁ greater than y ₂ / x ₂ selection mode semiconductor layers 421a, 421c of the semiconductor layer and the semiconductor layer 421b. Preferably, the semiconductor layer 421a, the semiconductor layer 421c, and the semiconductor layer 421b are selected _{such that y 1} /x ₁ is _{1.5 times or more of y 2} /x _2. More preferably, the semiconductor layer 421a, the semiconductor layer 421c, and the semiconductor layer 421b are selected _{such that y 1} /x ₁ is _{more than twice y 2} /x _2. More preferably, the semiconductor layer 421a, the semiconductor layer 421c, and the semiconductor layer 421b are selected in such a way that _{y 1} /x ₁ is _{three times or more of y 2} /x _2. At this time, in the semiconductor layer 421b, if y ₁ is x ₁ or more, the transistor can have stable electrical characteristics, which is preferable. However, when y ₁ is _{more than 3 times x 1} , the field-effect mobility of the transistor decreases, so y _{1 is} preferably less than 3 times _{x 1.} By adopting the above-mentioned structure as the semiconductor layer 421a and the semiconductor layer 421c, the semiconductor layer 421a and the semiconductor layer 421c can be made into layers that are less prone to oxygen defects than the semiconductor layer 421b.

In addition, when the semiconductor layer 421a and the semiconductor layer 421c are In-M-Zn oxide, the content of In and the element M other than Zn and O are preferably: In is less than 50 atomic%, and the element M is 50 atomic% or more. , More preferably: In is less than 25atomic%, and element M is more than 75atomic%. In addition, when the semiconductor layer 421b is an In-M-Zn oxide, the content of In and element M other than Zn and O is preferably: In is 25 atomic% or more, and element M is less than 75 atomic%, more preferably : In is 34atomic% or more, and element M is less than 66atomic%.

For example, as the semiconductor layer 421a containing In or Ga and the semiconductor layer 421c containing In or Ga, the atomic ratios of In:Ga:Zn=1:3:2, 1:3:4, 1:3 can be used. : In-Ga-Zn oxide formed from targets such as 6, 1:6:4 or 1:9:6, and In-Ga formed using targets with an atomic ratio of In:Ga=1:9, etc. Oxide, gallium oxide, etc. In addition, as the semiconductor layer 421b, a target material having an atomic ratio of In:Ga:Zn=3:1:2, 1:1:1, 5:5:6, 4:2:4.1, etc. can be used. In-Ga-Zn oxide. In addition, the atomic number ratios of the semiconductor layer 421a and the semiconductor layer 421b both include an error of ±20% of the above-mentioned atomic number ratio.

In order to impart stable electrical characteristics to the transistor using the semiconductor layer 421b, it is preferable to reduce impurities and oxygen defects in the semiconductor layer 421b to achieve high-purity essence, and to use the semiconductor layer 421b as an essential or substantially essential oxide semiconductor layer . In addition, it is preferable to use at least the channel formation region in the semiconductor layer 421b as an essential or substantially essential semiconductor layer.

Note that the substantially essential oxide semiconductor layer means that the carrier density in the oxide semiconductor layer is lower than 1×10 ¹⁷ /cm ³ , lower than 1×10 ¹⁵ /cm ³ or lower than 1×10 ¹³ /cm ³的oxide semiconductor layer.

Here, the function and effect of the semiconductor layer 421 composed of a stack of the semiconductor layer 421a, the semiconductor layer 421b, and the semiconductor layer 421c will be described with reference to the energy band structure diagram shown in FIG. 16B. Fig. 16B is an energy band structure diagram of the part indicated by the chain line A1-A2 in Fig. 16A. FIG. 16B shows the energy band structure of the channel formation region of the transistor 400.

In FIG. 16B, Ec403, Ec421a, Ec421b, Ec421c, and Ec411 show the energy at the bottom end of the conduction band of the insulating layer 403, the semiconductor layer 421a, the semiconductor layer 421b, the semiconductor layer 421c, and the insulating layer 411, respectively.

Here, the energy difference between the vacuum level and the energy at the bottom of the conduction band (also called "electron affinity") is the energy difference between the vacuum level and the upper end of the valence band (also called the free potential) minus the energy gap Value. In addition, the energy gap can be measured with a spectral ellipsometer (UT-300 manufactured by HORIBA JOBIN YVON). In addition, the energy difference between the vacuum level and the top of the valence band can be measured using an Ultraviolet Photoelectron Spectroscopy (UPS: Ultraviolet Photoelectron Spectroscopy) device (VersaProbe manufactured by PHI).

The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=1:3:2 is about 3.5 eV, and the electron affinity is about 4.5 eV. The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=1:3:4 is about 3.4 eV, and the electron affinity is about 4.5 eV. The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=1:3:6 is about 3.3 eV, and the electron affinity is about 4.5 eV. The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=1:6:2 is about 3.9eV, and the electron affinity is about 4.3eV. The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=1:6:8 is about 3.5 eV, and the electron affinity is about 4.4 eV. The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=1:6:10 is about 3.5 eV, and the electron affinity is about 4.5 eV. The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=1:1:1 is about 3.2eV, and the electron affinity is about 4.7eV. The energy gap of the In-Ga-Zn oxide formed using the target material whose atomic ratio is In:Ga:Zn=3:1:2 is about 2.8eV, and the electron affinity is about 5.0eV.

Since the insulating layer 403 and the insulating layer 411 are insulators, Ec403 and Ec411 are closer to the vacuum level (smaller electron affinity) than Ec421a, Ec421b, and Ec421c.

In addition, Ec421a is closer to the vacuum level than Ec421b. Specifically, Ec421a is preferably closer to the vacuum energy level of 0.05 eV or more, 0.07 eV or more, 0.1 eV or more, or 0.15 eV or more and 2 eV or less, 1 eV or less, 0.5 eV or less, or 0.4 eV or less than Ec421b.

In addition, Ec421c is closer to the vacuum level than Ec421b. Specifically, Ec421c is preferably closer to the vacuum energy level of 0.05 eV or more, 0.07 eV or more, 0.1 eV or more, or 0.15 eV or more and 2 eV or less, 1 eV or less, 0.5 eV or less, or 0.4 eV or less than Ec421b.

In addition, since a mixed region is formed near the interface between the semiconductor layer 421a and the semiconductor layer 421b and near the interface between the semiconductor layer 421b and the semiconductor layer 421c, the energy at the bottom of the conduction band continuously changes. In other words, there are no energy levels or almost no energy levels in these interfaces.

Therefore, in the laminated structure having this energy band structure, electrons mainly move in the semiconductor layer 421b. Thus, even if there is an energy level at the interface between the semiconductor layer 421a and the insulating layer 401 or the interface between the semiconductor layer 421c and the insulating layer 411, the energy level hardly affects the movement of electrons. In addition, because there is no energy level or almost no energy level at the interface between the semiconductor layer 421a and the semiconductor layer 421b and the interface between the semiconductor layer 421c and the semiconductor layer 421b, the movement of electrons is not hindered in this region. Therefore, the transistor 400 having the above-described stacked structure of the oxide semiconductor can realize a high field-efficiency mobility.

In addition, as shown in FIG. 16B, although trap levels 490 due to impurities or defects may be formed near the interface between the semiconductor layer 421a and the insulating layer 403 and the interface between the semiconductor layer 421c and the insulating layer 411, due to the semiconductor layer 421a and The existence of the semiconductor layer 421c can keep the semiconductor layer 421b away from the trap energy level.

In particular, in the transistor 400 exemplified in this embodiment, the top and side surfaces of the semiconductor layer 421b are in contact with the semiconductor layer 421c, and the bottom surface of the semiconductor layer 421b is in contact with the semiconductor layer 421a. In this way, by adopting a structure in which the semiconductor layer 421a and the semiconductor layer 421c cover the semiconductor layer 421b, the influence of the trap energy level can be further reduced.

Note that when the energy difference between Ec421a or Ec421c and Ec421b is small, electrons in the semiconductor layer 421b sometimes exceed the energy difference to reach the trap level. When electrons are trapped by the trap energy level, a fixed negative charge is generated at the interface of the insulating layer, which causes the threshold voltage of the transistor to shift to the positive direction.

Therefore, by setting the energy difference between Ec421a and Ec421b and the energy difference between Ec421c and Ec421b to be 0.1 eV or more, preferably 0.15 eV or more, the variation of the threshold voltage of the transistor is suppressed, and the electrical characteristics of the transistor can be improved. Good, so it is better.

In addition, the energy band gap of the semiconductor layer 421a and the semiconductor layer 421c is preferably wider than the energy band gap of the semiconductor layer 421b.

According to an embodiment of the present invention, a transistor with less unevenness in electrical characteristics can be realized. Therefore, a semiconductor device with less unevenness in electrical characteristics can be realized. According to an embodiment of the present invention, a reliable transistor can be provided. Therefore, a reliable semiconductor device can be realized.

In addition, since the band gap of the oxide semiconductor is 2 eV or more, the off-state current of the transistor using the oxide semiconductor for the semiconductor layer forming the channel can be extremely small. Specifically, the off-state current with a width of 1 µm per channel at room temperature can be set to less than 1×10 ^-20 A, preferably less than 1×10 ^-22 A, and more preferably less than 1×10 ^-24 A. In other words, the on-off ratio can be set to 20 digits or more and 150 digits or less.

According to an embodiment of the present invention, a transistor with low power consumption can be realized. Therefore, an imaging device and a semiconductor device with low power consumption can be realized. According to an embodiment of the present invention, an imaging device and a semiconductor device with high light-receiving sensitivity can be realized. According to an embodiment of the present invention, an imaging device and a semiconductor device with a large dynamic range can be realized.

In addition, since the oxide semiconductor has a wide energy band gap, the temperature range of the environment in which the semiconductor device including the oxide semiconductor can be used is wide. According to an embodiment of the present invention, an imaging device and a semiconductor device with a wide operating temperature range can be realized.

In addition, the above-mentioned three-layer structure is an example. For example, a two-layer structure in which one of the semiconductor layer 421a and the semiconductor layer 421c is not formed may also be adopted.

As an example of an oxide semiconductor applicable to the semiconductor layer 421a, the semiconductor layer 421b, and the semiconductor layer 421c, an oxide containing indium can be cited. The oxide has a high carrier mobility (electron mobility) when it contains indium, for example. In addition, the oxide semiconductor preferably contains the element M. The element M is preferably aluminum, gallium, yttrium, tin, or the like. As other elements that can be applied to the element M, there are boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and the like. Note that as the element M, a plurality of the above-mentioned elements may be combined in some cases. For example, the bond energy between element M and oxygen is high. The element M increases the energy gap of the oxide, for example. In addition, the oxide semiconductor preferably contains zinc. When the oxide contains zinc, for example, it is easy to be crystallized.

Note that the oxide semiconductor is not limited to oxides containing indium. The oxide semiconductor may be, for example, zinc tin oxide, gallium tin oxide, or gallium oxide.

The oxide semiconductor uses an oxide with a wide energy gap. The energy gap of the oxide semiconductor is, for example, 2.5 eV or more and 4.2 eV or less, preferably 2.8 eV or more and 3.8 eV or less, and more preferably 3 eV or more and 3.5 eV or less.

The influence of impurities in the oxide semiconductor is explained. In order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the oxide semiconductor to achieve low carrier density and high purification. The carrier density of the oxide semiconductor is less than 1×10 ¹⁷ cells/cm ³ , less than 1×10 ¹⁵ cells/cm ³ or less than 1×10 ¹³ cells/cm ³ . Preferably, the carrier density of an oxide semiconductor is less than 8 × 10 ¹¹ / cm ^3, less than 1 × 10 ¹¹ / cm ³ or less than 1 × ¹⁰ 10 / cm ^3, and 1 × 10 ^{- 9} / cm ³ or more. In order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the nearby film.

For example, silicon in an oxide semiconductor sometimes becomes a carrier trap or a source of carrier generation. Therefore, the silicon concentration measured by secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry) analysis in an oxide semiconductor is set to be less than 1×10 ¹⁹ atoms/cm ³ , preferably less than 5×10 ¹⁸ atoms/cm ³ , And more preferably less than 2×10 ¹⁸ atoms/cm ³ .

In addition, when the oxide semiconductor contains hydrogen, the carrier density may increase. The hydrogen concentration in the oxide semiconductor measured by SIMS is set to 2×10 ²⁰ atoms/cm ³ or less, preferably 5×10 ¹⁹ atoms/cm ³ or less, more preferably 1×10 ¹⁹ atoms/cm ³ or less , More preferably 5×10 ¹⁸ atoms/cm ³ or less. In addition, when nitrogen is contained in the oxide semiconductor, the carrier density may increase. The nitrogen concentration in the oxide semiconductor measured by SIMS is set to be less than 5×10 ¹⁹ atoms/cm ³ , preferably 5×10 ¹⁸ atoms/cm ³ or less, more preferably 1×10 ¹⁸ atoms/cm ³ or less , More preferably 5×10 ¹⁷ atoms/cm ³ or less.

In addition, in order to reduce the hydrogen concentration in the oxide semiconductor, it is preferable to reduce the hydrogen concentration in the insulating layer 403 and the insulating layer 411 that are in contact with the semiconductor layer 421. The hydrogen concentration in the insulating layer 403 and the insulating layer 411 measured by SIMS is set to 2×10 ²⁰ atoms/cm ³ or less, preferably 5×10 ¹⁹ atoms/cm ³ or less, more preferably 1×10 ¹⁹ atoms /cm ³ or less, more preferably 5×10 ¹⁸ atoms/cm ³ or less. In addition, in order to reduce the nitrogen concentration in the oxide semiconductor, it is preferable to reduce the nitrogen concentration in the insulating layer 403 and the insulating layer 411. The nitrogen concentration in the insulating layer 403 and the insulating layer 411 measured by SIMS is set to be less than 5×10 ¹⁹ atoms/cm ³ , preferably 5×10 ¹⁸ atoms/cm ³ or less, more preferably 1×10 ¹⁸ atoms /cm ³ or less, more preferably 5×10 ¹⁷ atoms/cm ³ or less.

In this embodiment, first, the semiconductor layer 421a is formed on the insulating layer 403, and the semiconductor layer 421b is formed on the semiconductor layer 421a.

In addition, when forming the oxide semiconductor layer, it is preferable to use a sputtering method. As the sputtering method, an RF sputtering method, a DC sputtering method, an AC sputtering method, etc. can be used. By using the DC sputtering method or the AC sputtering method, a film with better uniformity than the RF sputtering method can be formed.

In the present embodiment, as the semiconductor layer 421a, an In-Ga-Zn oxide target (In:Ga:Zn=1:3:2) having a thickness of 20 nm is formed by a sputtering method. Oxide. In addition, the constituent elements and compositions that can be applied to the semiconductor layer 421a are not limited to these.

In addition, oxygen doping treatment may be performed after the semiconductor layer 421a is formed.

Next, a semiconductor layer 421b is formed on the semiconductor layer 421a. In this embodiment, as the semiconductor layer 421b, an In-Ga-Zn oxide target (In:Ga:Zn=1:1:1) is used to form a thickness of 30nm by a sputtering method. Oxide. In addition, the constituent elements and compositions that can be applied to the semiconductor layer 421b are not limited to these.

In addition, oxygen doping treatment may be performed after the semiconductor layer 421b is formed.

Next, in order to further reduce impurities such as moisture or hydrogen contained in the semiconductor layer 421a and the semiconductor layer 421b so as to highly purify the semiconductor layer 421a and the semiconductor layer 421b, heat treatment may be performed.

For example, when measuring in a reduced pressure atmosphere, inert gas atmosphere such as nitrogen or rare gas, oxidizing atmosphere, or ultra-dry air (using CRDS (cavity ring-down laser spectroscopy: laser cavity resonance attenuation method) method) The semiconductor layer 421a and the semiconductor layer 421b are heated in an atmosphere with a moisture content of 20 ppm (dew point conversion to -55°C) or less, preferably 1 ppm or less, and more preferably 10 ppb or less air. In addition, the oxidizing atmosphere refers to an atmosphere containing 10 ppm or more of oxidizing gas such as oxygen, ozone, or oxygen nitride. In addition, the inert atmosphere refers to an atmosphere in which the above-mentioned oxidizing gas is less than 10 ppm and is also filled with nitrogen or rare gas.

In addition, by performing heat treatment, oxygen contained in the insulating layer 403 is diffused into the semiconductor layer 421a and the semiconductor layer 421b while releasing impurities, thereby reducing oxygen defects in the semiconductor layer 421a and the semiconductor layer 421b. In addition, after the heat treatment is performed under an inert gas atmosphere, the heat treatment may be performed under an oxidizing gas atmosphere containing 10 ppm or more, 1% or more, or 10% or more. In addition, as long as the semiconductor layer 421b is formed, the heat treatment can be performed at any time. For example, the heat treatment may be performed after the semiconductor layer 421b is selectively etched.

The heat treatment may be performed at a temperature of 250°C or higher and 650°C or lower, preferably at a temperature of 300°C or higher and 500°C or lower. The processing time is within 24 hours.

An electric furnace, RTA device, etc. can be used for the heat treatment. By using the RTA device, heat treatment can be performed only at a temperature above the strain point of the substrate in a short time. As a result, the heat treatment time can be shortened.

Next, a photoresist mask is formed on the semiconductor layer 421b, and the semiconductor layer 421a and a part of the semiconductor layer 421b are selectively etched using the photoresist mask. At this time, a part of the insulating layer 403 may be etched to form protrusions in the insulating layer 403.

As the etching of the semiconductor layer 421a and the semiconductor layer 421b, one or both of a dry etching method and a wet etching method can be used. After the etching is completed, the photoresist mask is removed.

In addition, the transistor 400 includes an electrode 444 and an electrode 445 on the semiconductor layer 421b so as to be in contact with a part of the semiconductor layer 421b. The electrode 444 and the electrode 445 may use metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, manganese, silver, tantalum, or tungsten, or a single-layer structure or a laminated structure of an alloy containing these elements as main components. Examples include a single-layer structure of a copper film containing manganese, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, and a copper-magnesium-aluminum alloy film is laminated on copper. The two-layer structure of the film, the two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or a titanium nitride film, an aluminum film or a copper film, and a titanium film or nitrogen film are sequentially laminated A three-layer structure of a titanium oxide film, a three-layer structure of sequentially stacking a molybdenum film or a molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or a molybdenum nitride film, and a three-layer structure of sequentially stacking a tungsten film, a copper film, and a tungsten film Structure etc. In addition, an alloy film or a nitride film combining aluminum and one or more elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may also be used.

In addition, the transistor 400 includes a semiconductor layer 421c on the semiconductor layer 421b, the electrode 444, and the electrode 445. The semiconductor layer 421c is in contact with a part of each of the semiconductor layer 421b, the electrode 444, and the electrode 445.

In this embodiment, the semiconductor layer 421c is formed by a sputtering method using an In-Ga-Zn oxide target (In:Ga:Zn=1:3:2). In addition, the constituent elements and compositions that can be applied to the semiconductor layer 421c are not limited to these. For example, gallium oxide may be used as the semiconductor layer 421c. In addition, oxygen doping treatment may be performed on the semiconductor layer 421c.

In addition, the transistor 400 includes an insulating layer 411 on the semiconductor layer 421c. The insulating layer 411 may be used as a gate insulating layer. The insulating layer 411 can be formed using the same material and method as the insulating layer 403. In addition, the insulating layer 411 may also be subjected to oxygen doping treatment.

After the semiconductor layer 421c and the insulating layer 411 are formed, a mask is formed on the insulating layer 411, and a part of the semiconductor layer 421c and the insulating layer 411 is selectively etched, thereby forming an island-shaped semiconductor layer 421c and an island-shaped insulating layer 411.

In addition, the transistor 400 includes an electrode 443 on the insulating layer 411. The electrode 443 (including other electrodes or wiring formed using the same layer as this) can be formed using the same material and method as the electrode 444 and the electrode 445.

In this embodiment mode, an example is shown in which the electrode 443 has a stacked structure including an electrode 443a and an electrode 443b. For example, tantalum nitride is used to form the electrode 443a, and copper is used to form the electrode 443b. The electrode 443a serves as a barrier layer to prevent the diffusion of copper. Therefore, a highly reliable semiconductor device can be realized.

In addition, the transistor 400 includes an insulating layer 412 covering the electrode 443. The insulating layer 412 can be formed using the same material and method as the insulating layer 403. In addition, the insulating layer 412 may also be subjected to oxygen doping treatment. In addition, the surface of the insulating layer 412 may also be subjected to CMP treatment.

In addition, the insulating layer 413 is formed on the insulating layer 412. The insulating layer 413 can be formed using the same material and method as the insulating layer 403. In addition, the surface of the insulating layer 413 may also be subjected to CMP treatment. The CMP treatment can reduce the unevenness of the sample surface, thereby improving the coverage of the insulating layer and the conductive layer to be formed later.

＜Structural example of transistor 2＞ Next, a structure example of a transistor that can be used instead of the above-mentioned transistor 400 will be described with reference to FIGS. 17A1 to 21C.

[Bottom gate type transistor] The transistor 510 illustrated in FIG. 17A1 is a channel protection type transistor which is one of the bottom gate type transistors. The transistor 510 includes an electrode 446 capable of serving as a gate electrode on the insulating layer 403. In addition, the electrode 446 includes a semiconductor layer 421 with an insulating layer 411 interposed therebetween. The electrode 446 can be formed using the same material and method as the electrode 444 and the electrode 445.

In addition, the transistor 510 has an insulating layer 450 that can be used as a channel protection layer on the channel formation region of the semiconductor layer 421. The insulating layer 450 can be formed using the same materials and methods as the insulating layer 411. A part of the electrode 444 and a part of the electrode 445 are formed on the insulating layer 450.

By providing the insulating layer 450 on the channel formation region, it is possible to prevent the semiconductor layer 421 from being exposed when the electrode 444 and the electrode 445 are formed. Therefore, when the electrode 444 and the electrode 445 are formed, thinning of the semiconductor layer 421 can be prevented. According to an embodiment of the present invention, a transistor with good electrical characteristics can be provided.

The difference between the transistor 511 and the transistor 510 shown in FIG. 17A2 is that the transistor 511 has an electrode 451 on the insulating layer 412 that can be used as a back gate electrode. The electrode 451 can be formed by the same material and method as the electrode 444 and the electrode 445.

Generally speaking, the back gate electrode is formed using a conductive layer, and is arranged in such a way that the channel formation area of the semiconductor layer is sandwiched by the gate electrode and the back gate electrode. Therefore, the back gate electrode can have the same function as the gate electrode. The potential of the back gate electrode can be equal to the gate electrode, GND potential or any potential. In addition, by independently changing the potential of the back gate electrode without interlocking with the potential of the gate electrode, the threshold voltage of the transistor can be changed.

Both the electrode 446 and the electrode 451 can be used as gate electrodes. Therefore, the insulating layer 411, the insulating layer 450, and the insulating layer 412 can be used as gate insulating layers.

Note that one of the electrode 446 or the electrode 451 is sometimes referred to as a "gate electrode", and the other is referred to as a "back gate electrode". For example, in the transistor 511, the electrode 451 is sometimes referred to as a "gate electrode" and the electrode 446 is referred to as a "back gate electrode". In addition, when the electrode 451 is used as a "gate electrode", the transistor 511 can be regarded as a kind of top gate type transistor. In addition, one of the electrode 446 and the electrode 451 may be referred to as a “first gate electrode”, and the other may be referred to as a “second gate electrode”.

By arranging the electrode 446 and the electrode 451 via the semiconductor layer 421 and setting the potentials of the electrode 446 and the electrode 451 to be equal, the region through which the carriers in the semiconductor layer 421 flows is further expanded in the film thickness direction, so the movement of the carriers The amount increases. As a result, the on-state current of the transistor 511 increases, and the field effect mobility also increases.

Therefore, the transistor 511 is a transistor having a large on-state current relative to the occupied area. That is, the area occupied by the transistor 511 can be reduced relative to the required on-state current. According to an embodiment of the present invention, the area occupied by the transistor can be reduced. Therefore, according to an embodiment of the present invention, a highly integrated semiconductor device can be realized.

In addition, since the gate electrode and the back gate electrode are formed using a conductive layer, they have a function of preventing an electric field generated outside the transistor from affecting the semiconductor layer in which the channel is formed (especially an electric field shielding function against static electricity). By forming the back gate electrode larger than the semiconductor layer and covering the semiconductor layer with the back gate electrode, the electric field shielding function can be improved.

In addition, since the electrode 446 and the electrode 451 each have a function of shielding an electric field from the outside, the electric charge such as charged particles generated on the side of the insulating layer 403 or above the electrode 451 does not affect the channel formation region of the semiconductor layer 421. As a result, it is possible to suppress degradation caused by stress test (for example, -GBT (Gate Bias-Temperature) stress test in which negative charge is applied to the gate) and the on-state when the drain voltage is different The rise of current and the change in voltage. Note that this effect is obtained when the electrode 446 and the electrode 451 have the same potential or different potentials.

Note that the BT stress test is an accelerated test that can evaluate the characteristic change (that is, change over time) of the transistor due to a long time of use in a short period of time. In particular, the amount of change in the critical voltage of the transistor before and after the BT stress test is an important index for checking reliability. It can be said that before and after the BT stress test, the less the variation of the threshold voltage, the higher the reliability of the transistor.

In addition, by having the electrode 446 and the electrode 451 and setting the electrode 446 and the electrode 451 to the same potential, the amount of variation in the threshold voltage can be reduced. Therefore, the unevenness in the electrical characteristics of the plurality of transistors is also reduced at the same time.

In addition, the variation of the threshold voltage before and after the +GBT stress test in which a positive charge is applied to the gate of the transistor with the back gate electrode is smaller than that of the transistor without the back gate electrode.

In addition, when light enters from the back gate electrode side, by forming the back gate electrode using a light-shielding conductive film, it is possible to prevent light from entering the semiconductor layer from the back gate electrode side. As a result, it is possible to prevent the light deterioration of the semiconductor layer and prevent the deterioration of electrical characteristics such as the threshold voltage shift of the transistor.

According to an embodiment of the present invention, a reliable transistor can be realized. In addition, a reliable semiconductor device can be realized.

The transistor 520 illustrated in FIG. 17B1 is a channel protection type transistor which is one of bottom gate type transistors. Although the transistor 520 has approximately the same structure as the transistor 510, the difference is that in the transistor 520, the insulating layer 450 covers the semiconductor layer 421. In addition, in the opening formed by selectively removing a part of the insulating layer 450 overlapping the semiconductor layer 421, the semiconductor layer 421 and the electrode 444 are electrically connected. In addition, in the opening formed by selectively removing a part of the insulating layer 450 overlapping the semiconductor layer 421, the semiconductor layer 421 and the electrode 445 are electrically connected. The region of the insulating layer 450 overlapping the channel formation region may be used as a channel protection layer.

The difference between the transistor 521 and the transistor 520 shown in FIG. 17B2 is that the transistor 521 has an electrode 451 on the insulating layer 412 that can be used as a back gate electrode. Both the electrode 446 and the electrode 451 can be used as gate electrodes. Therefore, the insulating layer 411, the insulating layer 450, and the insulating layer 412 can be used as gate insulating layers.

In addition, compared with the transistor 510 and the transistor 511, the distance between the electrode 444 and the electrode 446 of the transistor 520 and the transistor 521 and the distance between the electrode 445 and the electrode 446 are longer. Therefore, the parasitic capacitance generated between the electrode 444 and the electrode 446 can be reduced. In addition, the parasitic capacitance generated between the electrode 445 and the electrode 446 can be reduced. According to an embodiment of the present invention, a transistor with good electrical characteristics can be provided.

[Top Gate Transistor] The transistor 530 illustrated in FIG. 18A1 is one of the top gate type transistors. The transistor 530 has a semiconductor layer 421 on the insulating layer 403, an electrode 444 connected to a part of the semiconductor layer 421, and an electrode 445 connected to a part of the semiconductor layer 421 on the semiconductor layer 421 and the insulating layer 403. 421, the electrode 444, and the electrode 445 have an insulating layer 411 on the insulating layer 411, and an electrode 446 on the insulating layer 411.

Since the electrode 446 and the electrode 444 and the electrode 446 and the electrode 445 do not overlap in the transistor 530, the parasitic capacitance generated between the electrode 446 and the electrode 444 and the parasitic capacitance generated between the electrode 446 and the electrode 445 can be reduced. In addition, after the electrode 446 is formed, the impurity element 455 is introduced into the semiconductor layer 421 by using the electrode 446 as a mask, thereby forming an impurity region in the semiconductor layer 421 in a self-alignment manner (refer to FIG. 18A3). According to an embodiment of the present invention, a transistor with good electrical characteristics can be realized.

In addition, an ion implantation device, an ion doping device, or a plasma processing device may be used to introduce the impurity element 455. In addition, as the ion doping device, an ion doping device having a mass separation function can also be used.

As the impurity element 455, for example, at least one element of a group 13 element and a group 15 element can be used. In addition, when an oxide semiconductor is used as the semiconductor layer 421, as the impurity element 455, at least one element of a rare gas, hydrogen, and nitrogen may also be used.

The difference between the transistor 531 and the transistor 530 shown in FIG. 18A2 is that the transistor 531 has an electrode 451 and an insulating layer 417. The transistor 531 has an electrode 451 formed on the insulating layer 403 and an insulating layer 417 formed on the electrode 451. As described above, the electrode 451 can be used as a back gate electrode. Therefore, the insulating layer 417 can be used as a gate insulating layer. The insulating layer 417 can be formed by the same material and method as the insulating layer 411.

Like the transistor 511, the transistor 531 is a transistor having a large on-state current relative to the occupied area. That is, the area occupied by the transistor 531 can be reduced relative to the required on-state current. According to an embodiment of the present invention, the area occupied by the transistor can be reduced. Therefore, according to an embodiment of the present invention, a highly integrated semiconductor device can be realized.

The transistor 540 illustrated in FIG. 18B1 is one of the top gate type transistors. The difference between the transistor 540 and the transistor 530 is that in the transistor 540, the semiconductor layer 421 is formed after the electrode 444 and the electrode 445 are formed. In addition, the difference between the transistor 541 and the transistor 540 illustrated in FIG. 18B2 is that the transistor 541 has an electrode 451 and an insulating layer 417. In the transistor 540 and the transistor 541, a part of the semiconductor layer 421 is formed on the electrode 444, and the other part of the semiconductor layer 421 is formed on the electrode 445.

Like the transistor 511, the transistor 541 is a transistor having a large on-state current relative to the occupied area. In other words, the area occupied by the transistor 541 can be reduced relative to the required on-state current. According to an embodiment of the present invention, the area occupied by the transistor can be reduced. Therefore, according to an embodiment of the present invention, a highly integrated semiconductor device can be realized.

In the transistor 540 and the transistor 541, the electrode 446 is also used as a mask after the electrode 446 is formed to introduce the impurity element 455 into the semiconductor layer 421, thereby forming an impurity region in the semiconductor layer 421 in a self-aligned manner. . According to an embodiment of the present invention, a transistor with good electrical characteristics can be realized. In addition, according to an embodiment of the present invention, a highly integrated semiconductor device can be realized.

[s-channel type transistor] The transistor 550 illustrated in FIGS. 19A to 19C has a structure in which the top and side surfaces of the semiconductor layer 421b are covered by the semiconductor layer 421a. FIG. 19A is a top view of transistor 550. FIG. FIG. 19B is a cross-sectional view of the part indicated by the chain line X1-X2 in FIG. 19A (a cross-sectional view in the channel length direction). FIG. 19C is a cross-sectional view of the part indicated by the chain line Y1-Y2 in FIG. 19A (a cross-sectional view in the channel width direction).

By providing the semiconductor layer 421 on the convex portion formed on the insulating layer 403, the side surface of the semiconductor layer 421b can also be covered by the electrode 443. That is, the transistor 550 has a structure in which the semiconductor layer 421b can be electrically surrounded by the electric field of the electrode 443. In this way, the transistor structure in which the semiconductor is electrically surrounded by the electric field of the conductive film is called the surrounded channel (s-channel) structure. In addition, a transistor with an s-channel structure is also referred to as an "s-channel type transistor" or an "s-channel transistor".

In the s-channel structure, a channel may be formed in the entire semiconductor layer 421b (bulk). In the s-channel structure, the drain current of the transistor can be increased to obtain a higher on-state current. In addition, the entire area of the channel formation area formed in the semiconductor layer 421b may be depleted by the electric field of the electrode 443. Therefore, the s-channel structure can further reduce the off-state current of the transistor.

In addition, by increasing the height of the convex portion of the insulating layer 403 and shortening the channel width, the effect of increasing the on-state current and reducing the off-state current when the s-channel structure is adopted can be further improved. In addition, when the semiconductor layer 421b is formed, the exposed semiconductor layer 421a may also be removed. At this time, the side surface of the semiconductor layer 421a and the side surface of the semiconductor layer 421b may coincide.

In addition, in the transistor 551 shown in FIGS. 20A to 20C, an electrode 451 may be provided under the semiconductor layer 421 with an insulating layer 403 interposed therebetween. FIG. 20A is a top view of transistor 551. FIG. Fig. 20B is a cross-sectional view of the part indicated by the chain line X1-X2 in Fig. 20A. Fig. 20C is a cross-sectional view of the part indicated by the chain line Y1-Y2 in Fig. 20A.

In addition, the transistor 452 shown in FIGS. 21A to 21C may also be provided with a layer 414 above the electrode 443. FIG. 21A is a top view of transistor 452. FIG. Fig. 21B is a cross-sectional view of a part indicated by a chain line X1-X2 in Fig. 21A. Fig. 21C is a cross-sectional view of the part indicated by the chain line Y1-Y2 in Fig. 21A.

Although the layer 414 is provided on the insulating layer 413 in FIGS. 21A to 21C, it may also be provided on the insulating layer 412. By forming the layer 414 with a material having light-shielding properties, it is possible to prevent the characteristics of the transistor from being irradiated with light, the decrease in reliability, and the like. In addition, by forming the layer 414 at least larger than the semiconductor layer 421b and covering the semiconductor layer 421b with the layer 414, the above effect can be improved. The layer 414 may be formed using an organic material, an inorganic material, or a metal material. In addition, in the case of using a conductive material to form the layer 414, either a voltage can be supplied to the layer 414, or it can be in an electrically floating state.

＜Structure of oxide semiconductor＞ Next, the structure of the oxide semiconductor will be described.

In this specification, "parallel" refers to a state where the angle formed by two straight lines is -10° or more and 10° or less. Therefore, the state where the angle is -5° or more and 5° or less is also included. In addition, "substantially parallel" refers to a state where the angle formed by two straight lines is -30° or more and 30° or less. In addition, "perpendicular" refers to a state where the angle of two straight lines is 80° or more and 100° or less. Therefore, the state where the angle is 85° or more and 95° or less is also included. In addition, "substantially perpendicular" refers to a state where the angle formed by two straight lines is 60° or more and 120° or less. In this specification, the hexagonal crystal system includes the trigonal crystal system and the rhombohedral crystal system.

The oxide semiconductor film can be classified into a non-single crystal oxide semiconductor film and a single crystal oxide semiconductor film. Alternatively, oxide semiconductors can be classified into crystalline oxide semiconductors and amorphous oxide semiconductors, for example.

Examples of non-single crystal oxide semiconductors include CAAC-OS, polycrystalline oxide semiconductors, microcrystalline oxide semiconductors, and amorphous oxide semiconductors. In addition, examples of crystalline oxide semiconductors include single crystal oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and microcrystalline oxide semiconductors.

[CAAC-OS] The CAAC-OS film is one of oxide semiconductor films including a plurality of crystal parts in a c-axis alignment.

According to the composite analysis image (also called high-resolution TEM image) of the bright-field image and diffraction pattern of the CAAC-OS film observed with a transmission electron microscope (TEM: Transmission Electron Microscope), multiple crystal parts can be observed. However, in the high-resolution TEM image, no clear boundary between the crystal part and the crystal part, that is, the grain boundary, is not observed. Therefore, in the CAAC-OS film, a decrease in the electron mobility due to grain boundaries does not easily occur.

According to the high-resolution cross-sectional TEM image of the CAAC-OS film observed from a direction substantially parallel to the sample surface, it can be seen that the metal atoms are arranged in layers in the crystal part. Each metal atomic layer has a shape that reflects the surface on which the CAAC-OS film is formed (also referred to as the surface to be formed) or the convex and concave shapes of the top surface of the CAAC-OS film, and is parallel to the formed surface of the CAAC-OS film or CAAC- The OS film is arranged in a way on the top surface.

On the other hand, from a high-resolution planar TEM image of the CAAC-OS film viewed from a direction substantially perpendicular to the sample surface, it can be seen that the metal atoms are arranged in a triangular shape or a hexagonal shape in the crystal portion. However, there is no regularity in the arrangement of metal atoms between different crystal parts.

Use X-ray diffraction (XRD: X-Ray Diffraction) device to analyze the structure of CAAC-OS film. For example, when using the out-of-plane method to analyze _{a CAAC-OS film including InGaZnO 4} crystals, a peak appears when the diffraction angle (2θ) is around 31°. Since this peak is derived from _{the (009) plane of the InGaZnO 4} crystal, it can be seen that the crystals in the CAAC-OS film have c-axis orientation, and the c-axis is oriented substantially perpendicular to the formed surface or top surface of the CAAC-OS film .

_{Note that when the CAAC-OS film including InGaZnO 4} crystals is analyzed by the out-of-plane method, in addition to the peak around 31° 2θ, a peak around 36° 2θ is sometimes observed. The peak of 2θ near 36° means that a part of the CAAC-OS film contains crystals that are not aligned in the c-axis. Preferably, in the CAAC-OS film, a peak appears when 2θ is around 31° and does not appear when 2θ is around 36°.

The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities refer to elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, silicon and other elements have stronger bonding force with oxygen than the metal elements constituting the oxide semiconductor film and oxygen. This element will deprive the oxide semiconductor film of oxygen, thereby disrupting the oxide semiconductor film. The arrangement of atoms leads to a decrease in crystallinity. In addition, since heavy metals such as iron or nickel, argon, carbon dioxide, and the like have a large atomic radius (or molecular radius), when contained in the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disturbed, resulting in a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film sometimes become carrier traps or carrier generation sources.

In addition, the CAAC-OS film is an oxide semiconductor film with a low density of defect states. For example, oxygen vacancies in an oxide semiconductor film sometimes become carrier traps or become carrier generation sources by trapping hydrogen.

The state in which the impurity concentration is low and the defect state density is low (the number of oxygen vacancies is small) is called "high purity nature" or "substantially high purity nature". An oxide semiconductor film of high purity nature or substantially high purity nature has fewer sources of carrier generation, and therefore can have a lower carrier density. Therefore, transistors using this oxide semiconductor film rarely have electrical characteristics of negative threshold voltage (also referred to as normally-on characteristics). In addition, oxide semiconductor films of high purity nature or substantially high purity nature have fewer carrier traps. Therefore, a transistor using this oxide semiconductor film has little variation in electrical characteristics and becomes a highly reliable transistor. In addition, it takes a long time for the electric charge trapped by the carrier trap of the oxide semiconductor film to be discharged, and it sometimes moves like a fixed electric charge. Therefore, the electrical characteristics of a transistor using an oxide semiconductor film with a high impurity concentration and a high defect state density may be unstable.

In addition, in the transistor using the CAAC-OS film, the change in electrical characteristics due to irradiation of visible light or ultraviolet light is small.

[Microcrystalline Oxide Semiconductor Film] In the high-resolution TEM image of the microcrystalline oxide semiconductor film, there are regions where crystal parts are observed and regions where no clear crystal parts are observed. The size of the crystal portion included in the microcrystalline oxide semiconductor film is often 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film of nanocrystals (nc: nanocrystal) having microcrystals with a size of 1 nm or more and 10 nm or less or 1 nm or more and 3 nm or less is called nc-OS (nanocrystalline Oxide Semiconductor: nanocrystalline oxide). Semiconductor) film. In addition, for example, in the high-resolution TEM image of the nc-OS film, clear grain boundaries may not be observed in some cases.

The nc-OS film has periodic atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In addition, in the nc-OS film, the regularity of crystal alignment between different crystal parts is not observed. Therefore, no alignment was observed in the entire film. Therefore, sometimes the nc-OS film is not different from the amorphous oxide semiconductor film in some analysis methods. For example, when the structure of the nc-OS film is analyzed by an out-of-plane method using an XRD device that uses an X-ray whose beam diameter is larger than that of the crystal portion, the peak indicating the crystal plane cannot be detected. In addition, when the nc-OS film was subjected to electron diffraction (selected area electron diffraction) using electron beams whose beam diameter was larger than the crystal portion (for example, 50 nm or more), a diffraction pattern similar to a halo pattern was observed. On the other hand, when the nc-OS film was subjected to nano-beam electron diffraction using electron beams whose beam diameter was close to or smaller than the crystal portion, spots were observed. In addition, in the nano-beam electron diffraction pattern of the nc-OS film, a circle-like (annular) area with high brightness may be observed. In addition, in the nano-beam electron diffraction pattern of the nc-OS film, multiple spots in a ring-shaped area are sometimes observed.

The nc-OS film is an oxide semiconductor film whose regularity is higher than that of an amorphous oxide semiconductor film. Therefore, the defect state density of the nc-OS film is lower than that of the amorphous oxide semiconductor film. However, in the nc-OS film, the regularity of crystal alignment between different crystal parts is not observed. Therefore, the defect state density of the nc-OS film is higher than that of the CAAC-OS film.

[Amorphous Oxide Semiconductor Film] The amorphous oxide semiconductor film is an oxide semiconductor film that has a disordered atomic arrangement and does not have a crystal part. An example of this is an oxide semiconductor film having an amorphous form like quartz.

In the high-resolution TEM image of the amorphous oxide semiconductor film, no crystallized part was observed.

The structure of the amorphous oxide semiconductor film was analyzed using an XRD device. When analyzed by the out-of-plane method, no peaks indicating crystal planes were detected. In addition, in the electron diffraction pattern of the amorphous oxide semiconductor film, a halo pattern was observed. In addition, in the nano-beam electron diffraction pattern of the amorphous oxide semiconductor film, no spots were observed, but a halo pattern was observed.

In addition, the oxide semiconductor film may have a structure exhibiting physical properties between the nc-OS film and the amorphous oxide semiconductor film. The oxide semiconductor film having such a structure is specifically called an amorphous-like oxide semiconductor (a-like OS: amorphous-like Oxide Semiconductor) film.

In the high-resolution TEM image of a-like OS film, voids are sometimes observed. In addition, in the high-resolution TEM image of the a-like OS film, there are areas where crystal parts can be clearly observed and areas where crystal parts cannot be observed. The a-like OS film may be crystallized due to irradiation of a small amount of electrons during TEM observation, and thus the growth of crystal parts may be observed. On the other hand, in a high-quality nc-OS film, almost no crystallization due to a small amount of electron irradiation during TEM observation was observed.

In addition, the measurement of the size of the crystal parts of the a-like OS film and the nc-OS film can be performed using high-resolution TEM images. For example, the InGaZnO ₄ crystal has a layered structure with two Ga-Zn-O layers between the In-O layers. The unit lattice of the InGaZnO ₄ crystal has a layered structure in which a total of nine layers of three In-O layers and six Ga-Zn-O layers are overlapped in the c-axis direction. Therefore, the interval between these layers adjacent to each other is approximately equal to the lattice surface interval (also referred to as the d value) of the (009) plane, and the value obtained from the crystal structure analysis is 0.29 nm. Therefore, focusing on the lattice fringes of the high-resolution TEM image, in the region where the interval of the lattice fringes is 0.28 nm or more and 0.30 nm or less, each lattice fringe corresponds to the ab plane of the _{InGaZnO 4 crystal.}

In addition, the density of the oxide semiconductor film may vary depending on the structure. For example, when the composition of a certain oxide semiconductor film is known, the structure of the oxide semiconductor film can be estimated by comparing the density of a single crystal oxide semiconductor in the same composition as the composition. For example, with respect to the density of a single crystal oxide semiconductor, the density of the a-like OS film is 78.6% or more and less than 92.3%. For example, with respect to the density of a single crystal oxide semiconductor, the density of the nc-OS film and the density of the CAAC-OS film are both 92.3% or more and less than 100%. Note that it is difficult to form an oxide semiconductor film whose density is less than 78% of that of a single crystal oxide semiconductor.

Use specific examples to explain the above content. For example, in an oxide semiconductor film having an atom number ratio that satisfies In:Ga:Zn=1:1:1, _{the density of single crystal InGaZnO 4} having a rhombohedral structure is 6.357 g/cm ³ . Therefore, for example, in an oxide semiconductor film whose atomic number ratio satisfies In:Ga:Zn=1:1:1, the density of the a-like OS film is 5.0 g/cm ³ or more and less than 5.9 g/cm ³ . In addition, for example, in an oxide semiconductor film whose atomic ratio satisfies In:Ga:Zn=1:1:1, the density of the nc-OS film and the density of the CAAC-OS film are 5.9 g/cm ³ or more and less than 6.3g/cm ³ .

Note that sometimes there is no single crystal of the same composition. At this time, by combining single crystals with different compositions in an arbitrary ratio, the density of the single crystals corresponding to the desired composition can be calculated. The density of the single crystals of the desired composition may be calculated by using the weighted average according to the combination ratio of the single crystals of different compositions. Note that it is preferable to calculate the density by reducing the types of single crystals to be combined as much as possible.

Note that the oxide semiconductor film may be, for example, a stacked film including two or more types of an amorphous oxide semiconductor film, an a-like OS film, a microcrystalline oxide semiconductor film, and a CAAC-OS film.

Even if the oxide semiconductor film is a CAAC-OS film, sometimes the same diffraction pattern as that of the nc-OS film or the like is partially observed. Therefore, the ratio of the area where the diffraction pattern of the CAAC-OS film is observed in a certain range (also referred to as the CAAC conversion rate) may sometimes be used to indicate the quality of the CAAC-OS film. For example, a good CAAC-OS film has a CAAC conversion rate of 50% or more, preferably 80% or more, more preferably 90% or more, and still more preferably 95% or more.

＜Off-state current＞ In this specification, unless otherwise specified, the off-state current refers to the drain current when the transistor is in the off state (also referred to as the non-conducting state or the blocking state). Unless otherwise specified, in n-channel transistors, the off state refers to the state where the voltage Vgs between the gate and the source is lower than the threshold voltage Vth, and in p-channel transistors, the off state refers to the gate A state where the voltage Vgs between the source and the source is higher than the threshold voltage Vth. For example, the off-state current of an n-channel transistor sometimes refers to the drain current when the voltage Vgs between the gate and the source is lower than the threshold voltage Vth.

The off-state current of the transistor sometimes depends on Vgs. Therefore, when there is a Vgs that causes the off-state current of the transistor to be I or less, the off-state current of the transistor is sometimes referred to as I or less. The off-state current of a transistor sometimes refers to: the off-state current when Vgs is a predetermined value; the off-state current when Vgs is a value within a predetermined range; or when Vgs is a sufficiently low off-state current The off-state current at the value.

As an example, imagine an n-channel transistor, the threshold voltage Vth of the n-channel transistor is 0.5V, the drain current when Vgs is 0.5V is 1×10 ^-9 A, and the drain current when Vgs is 0.1V of 1 × 10 ^-13 a, Vgs is the drain current at -0.5V was 1 × 10 ^-19 a, Vgs is the drain current at -0.8V is 1 × 10 ^-22 A. When Vgs is -0.5V or in the range of -0.5V to -0.8V, the drain current of the transistor is ^{less than 1×10 -19} A, so the off-state current of the transistor is sometimes called 1×10 ^-19 A or less. Since there is a Vgs that makes the drain current of the transistor 1×10 ^-22 A or less, the off-state current of the transistor is sometimes referred to as 1×10 ^-22 A or less.

In this specification, sometimes the off-state current of a transistor having a channel width W is expressed by the value of each channel width W. In addition, sometimes the off-state current of a transistor having a channel width W is expressed as a current value per predetermined channel width (for example, 1 µm). In the latter case, the unit of off-state current is sometimes expressed as current/length (for example, A/µm).

The off-state current of a transistor sometimes depends on temperature. In this specification, unless otherwise specified, the off-state current sometimes means the off-state current at room temperature, 60°C, 85°C, 95°C, or 125°C. Or, sometimes it means at a temperature that guarantees the reliability of the semiconductor device or the like including the transistor or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any temperature from 5°C to 35°C) The off-state current. At room temperature, 60°C, 85°C, 95°C, 125°C, at a temperature that guarantees the reliability of a semiconductor device including the transistor or the like, or at a temperature (for example, 5°C to 5°C to At any temperature of 35°C), when there is Vgs that makes the off-state current of the transistor less than I, the off-state current of the transistor is sometimes referred to as I or less.

The off-state current of the transistor sometimes depends on the voltage Vds between the drain and the source. In this manual, unless otherwise specified, the off-state current sometimes indicates that the absolute value of Vds is 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V , 16V or 20V off-state current. Alternatively, it may indicate the off-state current at the time of Vds that guarantees the reliability of the semiconductor device including the transistor or the like or the Vds used in the semiconductor device including the transistor. When Vds is a predetermined value, when there is Vgs that causes the off-state current of the transistor to be I or less, the off-state current of the transistor is sometimes referred to as I or less. Here, for example, the predetermined value refers to: 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, 20V, semiconductor devices guaranteed to include the transistor, etc. The value of the reliability of Vds or the value of Vds used in a semiconductor device including the transistor.

In the above description of the off-state current, the drain can be referred to as the source. In other words, the off-state current sometimes refers to the current flowing through the source when the transistor is in the off state.

In this specification, the off-state current is sometimes referred to as the leakage current.

In this specification, the off-state current sometimes refers to, for example, the current flowing between the source and the drain when the transistor is in the off state.

＜Film forming method＞ Although various films such as metal films, semiconductor films, and inorganic insulating films disclosed in this specification can be formed by sputtering or plasma CVD, thermal CVD (Chemical Vapor Deposition) can also be used. Other methods are formed. As an example of the thermal CVD method, a MOCVD (Metal Organic Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method can be cited.

Since the thermal CVD method is a film formation method that does not use plasma, it has the advantage of not generating defects caused by plasma damage.

The film formation by the thermal CVD method can be performed by supplying a source gas and an oxidizing agent into the processing chamber at the same time, and setting the pressure in the processing chamber to atmospheric pressure or reduced pressure to cause a reaction near or on the substrate.

In addition, the film formation by the ALD method may be performed in a method of setting the pressure in the processing chamber to atmospheric pressure or reduced pressure, introducing the source gas for the reaction into the processing chamber sequentially, and repeatedly introducing the gas in this order. For example, by switching each on-off valve (also called a high-speed valve), two or more source gases are sequentially supplied into the processing chamber. In order to prevent the mixing of multiple source gases, for example, an inert gas (argon or nitrogen, etc.) or the like is introduced simultaneously with or after the introduction of the first source gas, and then the second source gas is introduced. Note that when the first source gas and the inert gas are introduced at the same time, the inert gas is used as a carrier gas. In addition, the inert gas may be introduced at the same time as the second source gas. In addition, instead of introducing inert gas, the first source gas may be exhausted by vacuum pumping, and then the second source gas may be introduced. The first source gas is attached to the surface of the substrate to form a first layer, and then the introduced second source gas reacts with the first layer, whereby the second layer is laminated on the first layer to form a thin film. By repeatedly introducing gas in this order until the desired thickness is obtained, a thin film with good step coverage can be formed. Since the thickness of the film can be adjusted according to the number of times that the gas is repeatedly introduced in sequence, the ALD method can accurately adjust the thickness and is suitable for the formation of micro-FETs (Field Effect Transistor: Field Effect Transistor).

Various films such as metal films, semiconductor films, and inorganic insulating films disclosed in the above embodiments can be formed by thermal CVD methods such as MOCVD or ALD. For example, when forming an In-Ga-Zn-O film, three Methyl indium, trimethyl gallium and dimethyl zinc. The chemical formula of trimethylindium is In(CH ₃ ) ₃ . The chemical formula of trimethylgallium is Ga(CH ₃ ) ₃ . The chemical formula of dimethyl zinc is Zn(CH ₃ ) ₂ . However, it is not limited to the above combination. Triethylgallium (chemical formula is Ga(C ₂ H ₅ ) ₃ ) can also be used instead of trimethylgallium, and diethyl zinc (chemical formula is Zn(C ₂ H ₅ ) ₂₎ ) Instead of dimethyl zinc.

For example, when a hafnium oxide film is formed using a deposition device using the ALD method, the following two gases are used: by making a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide or tetradimethyl amide hafnium (TDMAH)), etc. Hafnium amine) source gas obtained by gasification; and ozone (O ₃ ) used as an oxidant. Note that the chemical formula of Hafnium Tetradimethylamide is Hf[N(CH ₃ ) ₂ ] ₄ . In addition, as other material liquids, there are tetrakis (ethyl methyl amide) hafnium and the like.

For example, when an aluminum oxide film is formed using a deposition apparatus using the ALD method, the following two gases are used: a source obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (trimethylaluminum (TMA), etc.) Gas; and H ₂ O used as an oxidant. Note that the chemical formula of trimethylaluminum is Al(CH ₃ ) ₃ . In addition, as other material liquids, there are tris(dimethylamide) aluminum, triisobutyl aluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedione), and the like.

For example, when a silicon oxide film is formed using a deposition device using the ALD method, hexachloroethane is attached to the film-forming surface to remove the chlorine contained in the attached matter and supply oxidizing gas (O ₂ , nitrous oxide) The free radicals make it react with attachments.

For example, when forming a tungsten film using a deposition apparatus using an ALD method, WF ₆ gas and B ₂ H ₆ gas are sequentially and repeatedly introduced to form an initial tungsten film, and then WF ₆ gas and H ₂ gas are used to form a tungsten film. _{Note that SiH 4} gas can also be used instead of B ₂ H ₆ gas.

For example, when an oxide semiconductor film such as an In-Ga-Zn-O film is formed using a deposition apparatus using the ALD method, In(CH ₃ ) ₃ gas and O ₃ gas are sequentially and repeatedly introduced to form an In-O layer, and then Ga( CH ₃ ) ₃ gas and O ₃ gas are used to form a GaO layer, and then Zn(CH ₃ ) ₂ gas and O ₃ gas are used to form a ZnO layer. Note that the order of these layers is not limited to the above example. In addition, these gases can also be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, a Ga-Zn-O layer, and the like. Note that, although it may be used for H ₂ O gas bubbling water using an inert gas such as Ar obtained instead of the O ₃ gas, but preferably does not contain H O ₃ gas. In addition, In(C ₂ H ₅ ) ₃ gas may be used instead of In(CH ₃ ) ₃ gas. In addition, Ga(C ₂ H ₅ ) ₃ gas may be used instead of Ga(CH ₃ ) ₃ gas. In addition, Zn(CH ₃ ) ₂ gas can also be used.

This embodiment mode can be combined with descriptions of other embodiments as appropriate.

Embodiment 8 In this embodiment, an example of an electronic device using the imaging device according to an embodiment of the present invention will be described.

As specific examples of electronic devices that use the imaging device according to an embodiment of the present invention, display devices such as televisions, monitors, lighting equipment, desktop or laptop personal computers, word processors, and reproductions stored on DVDs can be cited. (Digital Versatile Disc: digital audio-visual disc) and other recording media such as still images or moving images in image reproduction devices, portable CD players, radios, tape recorders, headset speakers, audio systems, navigation systems, desk clocks, wall clocks , Wireless phone handsets, walkie-talkies, mobile phones, car phones, portable game consoles, tablet terminals, pachinko machines and other large game consoles, calculators, portable information terminals, electronic notebooks, e-book reader terminals, Electronic translators, voice input devices, video cameras, digital still cameras, electric shavers, microwave ovens and other high-frequency heating devices, electric cookers, washing machines, vacuum cleaners, water heaters, electric fans, hair dryers, air-conditioning equipment such as air conditioners, humidifiers, Dehumidifiers, dishwashers, dish dryers, clothes dryers, quilt dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, DNA storage freezers, flashlights, chainsaws and other tools, smoke detectors, Dialysis equipment and other medical equipment, fax machines, printers, compound printers, automatic teller machines (ATM), vending machines, etc. Furthermore, industrial equipment such as guide lights, semaphores, conveyor belts, escalators, elevators, industrial robots, power storage systems, and power storage devices for power homogenization or smart grids can also be cited. In addition, fuel-based engines, electric motors using electric power from non-aqueous secondary batteries, or mobile bodies propelled by fuel-based engines are also included in the category of electronic devices. Examples of the above-mentioned moving bodies include electric vehicles (EV), hybrid electric vehicles (HEV) with both an internal combustion engine and an electric motor, plug-in hybrid electric vehicles (PHEV), crawler-type vehicles that use crawlers instead of these wheels, including Electric bicycles such as electric bicycles, motorcycles, electric wheelchairs, golf carts, small or large ships, submarines, helicopters, airplanes, rockets, artificial satellites, space probes, planetary probes, space ships, etc.

FIG. 22A is a video camera, which includes a first housing 1041, a second housing 1042, a display portion 1043, operation keys 1044, a lens 1045, a connecting portion 1046, and the like. The operation keys 1044 and the lens 1045 are provided in the first housing 1041, and the display portion 1043 is provided in the second housing 1042. Moreover, the first housing 1041 and the second housing 1042 are connected by a connecting portion 1046, and the angle between the first housing 1041 and the second housing 1042 can be changed by the connecting portion 1046. The image of the display portion 1043 can also be switched according to the angle between the first housing 1041 and the second housing 1042 at the connecting portion 1046. The imaging device according to one embodiment of the present invention may be provided at the position of the focal point of the lens 1045.

FIG. 22B is a mobile phone, and a housing 1051 is provided with a display unit 1052, a microphone 1057, a speaker 1054, a camera 1059, an input/output terminal 1056, operation buttons 1055, and the like. The imaging device of one embodiment of the present invention can be used for the camera 1059.

FIG. 22C is a digital camera that includes a housing 1021, a shutter button 1022, a microphone 1023, a light-emitting part 1027, a lens 1025, and the like. The imaging device according to one embodiment of the present invention may be provided at the position of the focal point of the lens 1025.

22D is a portable game machine. The portable game machine includes a housing 1001, a housing 1002, a display portion 1003, a display portion 1004, a microphone 1005, a speaker 1006, operation keys 1007, a stylus 1008, a camera 1009, and the like. Note that although the portable game machine shown in FIG. 22D includes two display parts 1003 and a display part 1004, the number of display parts included in the portable game machine is not limited to this. The imaging device of one embodiment of the present invention can be used for the camera 1009.

22E is a watch-type information terminal. The watch-type information terminal includes a housing 1031, a display portion 1032, a wristband 1033, a camera 1039, and the like. The display unit 1032 may be a touch panel. The imaging device of one embodiment of the present invention can be used for the camera 1039.

FIG. 22F is a portable data terminal. The portable data terminal includes a first housing 1011, a display portion 1012, a camera 1019, and the like. The touch panel function of the display unit 1012 can realize the input and output of information. The imaging device of one embodiment of the present invention can be used for the camera 1019.

Of course, as long as the imaging device of one embodiment of the present invention is provided, it is not limited to the electronic device shown above.

This embodiment mode can be combined with descriptions of other embodiments as appropriate.

10 Semiconductor device 20 Pixel 21 pixels 30 Circuit 40 Circuit 41 Circuit 50 Circuit 60 Circuit 101 Photoelectric conversion element 102 Transistor 103 Transistor 104 Transistor 105 Capacitor 110 Transistor 120 Transistor 201 Conductive layer 202 Conductive layer 203 Conductive layer 204 Conductive layer 211 Conductive layer 212 Conductive layer 221 Semiconductor layer 222 Semiconductor layer 231 Conductive layer 232 Conductive layer 233 Conductive layer 234 Conductive layer 241 Conductive layer 242 Conductive layer 243 Conductive layer 250 conductive layer 251 Opening 252 Opening 253 Opening 254 Opening 255 Opening 256 Opening 257 Opening 300 imaging device 310 Photoelectric detection department 320 Data Processing Department 321 Circuit 400 Transistor 401 Insulation layer 402 Insulation layer 403 Insulation layer 411 Insulation layer 412 Insulation layer 413 Insulation layer 414 floors 417 Insulation layer 421 Semiconductor layer 443 Electrode 444 Electrode 445 Electrode 446 Electrode 450 insulation layer 451 Electrode 452 Transistor 455 Impurity Elements 490 Trap Energy Level 510 Transistor 511 Transistor 520 Transistor 521 Transistor 530 Transistor 531 Transistor 540 Transistor 541 Transistor 550 Transistor 551 Transistor 801 Transistor 802 Transistor 803 Photodiode 804 Transistor 805 Transistor 806 Transistor 807 Transistor 810 Semiconductor substrate 811 Component separation layer 812 Impurity area 813 Insulation layer 814 Conductive layer 815 Side Wall 816 Insulation layer 817 Insulation layer 818 Conductive layer 819 Wiring 820 Insulation layer 821 Conductive layer 822 Insulation layer 823 Conductive layer 824 Oxide semiconductor layer 825 Conductive layer 826 Insulation layer 827 Conductive layer 828 Insulation layer 829 Insulation layer 830 Conductive layer 831 Wiring 832 n-type semiconductor layer 833 i-type semiconductor layer 834 p-type semiconductor layer 835 Insulation layer 836 Conductive layer 837 Wiring 842 Impurity area 843 Insulation layer 844 Conductive layer 852 Impurity area 853 Insulation layer 854 Conductive layer 861 Impurity area 862 Conductive layer 900 components 901 Substrate 902 Electrode 903 Photoelectric conversion layer 904 Electrode 905 The hole is injected into the energy barrier layer 1001 Shell 1002 Shell 1003 Display 1004 Display 1005 Microphone 1006 Speaker 1007 Operation key 1008 stylus 1009 Camera 1011 Shell 1012 Display 1019 Camera 1021 Shell 1022 Shutter button 1023 Microphone 1025 Lens 1027 Light-emitting part 1031 Shell 1032 Display 1033 Wristband 1039 Camera 1041 Shell 1042 Shell 1043 Display 1044 Operation key 1045 Lens 1046 Connection part 1051 Shell 1052 Display 1054 Speaker 1055 button 1056 Input and output terminals 1057 Microphone 1059 Camera 1100 floors 1400 floors 1500 Insulation layer 1510 Shading layer 1520 Organic resin layer 1530a Color filter 1530b Color filter 1530c color filter 1540 Micro lens array 1550 Optical conversion layer 1600 Support substrate

In the scheme: FIG. 1 is a diagram illustrating an example of the structure of a semiconductor device; FIG. 2 is a circuit diagram illustrating an example of the structure of a semiconductor device; FIG. 3 is a circuit diagram illustrating an example of the structure of a semiconductor device; Figure 4 is a timing diagram; FIG. 5 is a diagram illustrating an example of the structure of a pixel; 6A to 6D are circuit diagrams illustrating an example of the structure of a pixel; 7A and 7B are circuit diagrams illustrating an example of the structure of a pixel; 8A to 8D are circuit diagrams illustrating an example of the structure of a pixel; FIG. 9 is a circuit diagram illustrating an example of the structure of the pixel portion; FIG. 10 is a diagram illustrating an example of the structure of an imaging device; 11A to 11C are diagrams illustrating an example of a cross-sectional structure of a semiconductor device; 12A to 12C are diagrams illustrating an example of a cross-sectional structure of a semiconductor device; 13A and 13B are diagrams illustrating an example of a cross-sectional structure of a semiconductor device; 14A and 14B are diagrams illustrating an example of the structure of an imaging device; 15A to 15C are diagrams illustrating an example of the structure of a pixel; 16A and 16B are diagrams illustrating an example of the structure of a transistor; 17A1, FIG. 17A2, FIG. 17B1, and FIG. 17B2 are diagrams illustrating an example of the structure of a transistor; 18A1, 18A2, 18A3, 18B1, and 18B2 are diagrams illustrating an example of the structure of a transistor; 19A to 19C are diagrams illustrating an example of the structure of a transistor; 20A to 20C are diagrams illustrating an example of the structure of a transistor; 21A to 21C are diagrams illustrating an example of the structure of a transistor; 22A to 22F are diagrams illustrating an electronic device.

none

10 Semiconductor device 20 Pixel 21 pixels 30 Circuit 40 Circuit S1~Sn switch OUT[1]~OUT[m] Wiring SE[1]~SE[n] Wiring VIN wiring

Claims (4)

An imaging device including a pixel portion, the pixel portion including: a photodiode; a silicon oxide film on the photodiode; a light-shielding layer including tungsten on the silicon oxide film; and a color filter on the light-shielding layer A first transistor; a second transistor; a third transistor; and a capacitor, wherein one of the source and drain of the first transistor is electrically connected to an electrode of the photodiode, and the first transistor The other of the source and drain of a transistor is electrically connected to one of the source and drain of the second transistor, the gate of the third transistor, and an electrode of the capacitor, the photoelectric The other electrode of the diode is electrically connected to the other electrode of the capacitor, and the gate line of the first transistor, the gate line of the second transistor, and the other electrode of the photodiode The first wiring electrically connected and the second wiring electrically connected to one of the source and drain of the third transistor are formed on the same layer. An imaging device including a pixel portion, the pixel portion including: a photodiode; a silicon oxide film on the photodiode; a light shielding layer including tungsten on the silicon oxide film; The color filter on the light-shielding layer; a first transistor; a second transistor; a third transistor; and a capacitor, wherein one of the source and drain of the first transistor is connected to the photodiode One electrode is electrically connected, the other of the source and drain of the first transistor and one of the source and drain of the second transistor, the gate of the third transistor, and the capacitor One electrode is electrically connected, and the other electrode of the photodiode is electrically connected to the other electrode of the capacitor. In a plan view, the first transistor, the second transistor, and the third transistor have different shapes from each other. Gate electrode, and the gate line of the first transistor, the gate line of the second transistor, the first wiring electrically connected to the other electrode of the photodiode, and the third transistor The second wiring electrically connected to one of the source and drain is formed on the same layer. An imaging device including a pixel portion, the pixel portion including: a photodiode; a silicon oxide film on the photodiode; a light-shielding layer including tungsten on the silicon oxide film; and a color filter on the light-shielding layer Slice; first transistor; second transistor; A third transistor; and a capacitor, wherein one of the source and drain of the first transistor is electrically connected to an electrode of the photodiode, and the source and the drain of the first transistor are The other is electrically connected to one of the source and drain of the second transistor, the gate of the third transistor and one electrode of the capacitor, and the other electrode of the photodiode is electrically connected to the other electrode of the capacitor. One electrode is electrically connected. In a plan view, the first transistor, the second transistor, and the third transistor have conductive films of different shapes from each other. The conductive films include regions used as gate electrodes. , The openings reaching the gate electrode of the second transistor and the gate electrode of the third transistor are offset from the center of each of the gate electrodes, and the gate line of the first transistor , The gate line of the second transistor, the first wiring electrically connected to the other electrode of the photodiode, and the second wiring electrically connected to one of the source and drain of the third transistor The lines are formed on the same layer. The imaging device according to any one of claims 1 to 3, wherein the silicon oxide film is in contact with the photodiode; and the light shielding layer including tungsten is in contact with the silicon oxide film.

Images