TWI745172B - Board, plating device, and method for manufacturing board - Google Patents

Abstract

The present invention can improve the accuracy of the porosity of each part of the board and/or the freedom of adjustment of the porosity. The plate of the present invention is arranged in the plating tank between the substrate and the anode, and is provided with a hole forming range formed with a plurality of holes, the hole forming range having: a central part; an intermediate part outside the central part; and In the outer peripheral part outside the middle part; the center part and the outer peripheral part of the hole forming range have a plurality of long holes, and the middle part of the hole forming range has a plurality of circular holes.

Description

Board, plating device, and method for manufacturing board

The present invention relates to a board, a plating device, and a method for manufacturing the board.

In the past, wiring and bumps (protruding electrodes) were formed on the surface of substrates such as semiconductor wafers and printed circuit boards. An electrolytic plating method is conventionally known as a method of forming the wiring and bumps.

The conventional plating apparatus used for the electrolytic plating method is to arrange a plate (resistance) for adjusting an electric field with many holes between a circular substrate such as a wafer and an anode (for example, refer to Patent Documents 1 and 2). In addition, in order to suppress the adverse effect caused by the placement of the holes on the thickness distribution of the plating film, the distribution density (or porosity) of the holes formed in the plate is determined in a way that the distribution of the holes is uniform in each area of the plate (patent Literature 3). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2004-225129 A [Patent Document 2] International Publication No. 2004/009879 [Patent Document 3] Japanese Patent Application No. 2020-083568 Specification

(The problem to be solved by the invention)

When opening holes of the same size based on the target porosity, because the hole density in the area near the center of the board is low, there will be a problem of error between the porosity based on the actual number of holes formed and the target porosity. For this reason, the number of pores needs to be integerized when the theoretical total pore area of the target porosity is divided by the pore diameter. If the error is large and exceeds the specified value, it may adversely affect the coating thickness distribution. Therefore, in order to reduce the error, the error of porosity is reduced by increasing the number of holes. However, when the number of holes is increased in order to reduce the error, the space between the holes between adjacent holes in the circumferential or radial direction cannot be ensured, and it is difficult to process the holes or there is no drilling hole corresponding to the required diameter. .

In addition, when a paddle for stirring the plating solution is installed between the wafer and the plate, in order to ensure the space for installing the paddle and the space for movement, the distance between the wafer and the plate must be increased, and the plating tank must be in the direction of the water range. The size of the electric field may increase the influence of the electric field, the film thickness of the edge of the substrate, and the in-plane uniformity of the plating film thickness may be adversely affected.

The present invention is made in view of the above-mentioned problems, and one of its objects is to improve the accuracy of the porosity in each area of the plate and/or the degree of freedom of adjustment of the porosity. In addition, an object of the present invention is to improve the in-plane uniformity of the plating film thickness. (Means to solve the problem)

The present invention provides a plate, which is arranged between a substrate and an anode in a plating bath, and is provided with a hole forming range formed with a plurality of holes. The hole forming range has: a central part and a middle part outside the central part; And the outer peripheral part outside the middle part; the central part and the outer peripheral part of the hole forming range have a plurality of long holes, and the middle part of the hole forming range has a plurality of circular holes.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or equivalent elements are marked with the same symbols, and repeated descriptions are omitted.

FIG. 1 is a perspective view showing the overall structure of the plating apparatus of this embodiment. Fig. 2 is a plan view showing the overall structure of the plating apparatus of this embodiment. As shown in Figures 1 and 2, the plating device 1000 includes: a loading port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a prepreg module 300, a plating module 400, a cleaning module 500, The spin rinse dryer 600, the conveying device 700, and the control module 800.

The loading port 100 is used to carry in the substrates of cassettes such as FOUP (Front Opening Wafer Carrier) not shown in the figure in the plating apparatus 1000, or to carry out the modules from the plating apparatus 1000 to the cassettes. In this embodiment, four load ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of load ports 100 are not limited. The transfer robot 110 is a robot for transferring substrates, and is configured to transfer substrates between the loading port 100, the aligner 120, and the transfer device 700. When the transfer robot 110 and the transfer device 700 transfer the substrate between the transfer robot 110 and the transfer device 700, the transfer of the substrate can be performed via a temporary stage (not shown).

The aligner 120 is used to remove the high resistance oxide film formed on the surface of the seed layer of the plated surface of the substrate before the plating process, cleaning or activating the plating groove, etc. The module position is aligned with the specified direction. In this embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are not limited. The pre-wetting module 200 wets the plated surface of the substrate before plating with a treatment liquid such as pure water or degassed water, and replaces the air inside the pattern formed on the substrate surface with the treatment liquid. The pre-wetting module 200 is constructed in such a way that it is easy to supply the plating solution inside the pattern by replacing the processing solution inside the pattern with the plating solution during plating. In this embodiment, two pre-wetting modules 200 are arranged side by side in the vertical direction, but the number and arrangement of the pre-wetting modules 200 are not limited.

The prepreg module 300 is implemented, for example, by etching with a treatment solution such as sulfuric acid or hydrochloric acid to remove the high-resistance oxide film formed on the seed layer surface of the plated surface of the substrate before plating, cleaning or activation plating The method of prepreg treatment on the surface of the substrate is constituted. In this embodiment, two prepreg modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the prepreg modules 300 are not limited. The plating module 400 performs plating processing on the substrate. In this embodiment, there are two sets of 12 plating modules 400, which are arranged side by side in the vertical direction, and 4 are arranged side by side in the horizontal direction. A total of 24 plating modules 400 are provided, but the plating module 400 is The quantity and configuration are not limited.

The cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are not limited. The spin rinse dryer 600 is a module used to dry the substrate after the cleaning process by rotating at a high speed. In this embodiment, two spin-wash dryers are arranged side by side in the vertical direction, but the number and arrangement of the spin-wash dryers are not limited. The conveying device 700 is a device for conveying substrates between a plurality of modules in the plating device 1000. The control module 800 is configured to control a plurality of modules of the plating device 1000, for example, may be composed of a general computer or a dedicated computer with an input and output interface with the operator.

Hereinafter, an example of a series of plating processes in the plating apparatus 1000 will be described. First, the substrate stored in the cassette is carried into the loading port 100. Continuing, the transfer robot 110 takes out the substrate from the cassette of the loading port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the orientation range of the substrate or the position of the groove, etc. in a specified direction. The transfer robot 110 transfers the substrate whose direction is aligned by the aligner 120 to the transfer device 700.

The transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-wetting module 200. The pre-wetting module 200 performs pre-wetting processing on the substrate. The conveying device 700 conveys the substrate after the pre-wet treatment to the prepreg module 300. The prepreg module 300 performs prepreg processing on the substrate. The conveying device 700 conveys the substrate after the prepreg treatment to the plating module 400. The plating module 400 performs plating processing on the substrate.

The transport device 700 transports the substrate after the plating process to the cleaning module 500. The cleaning module 500 performs cleaning processing on the substrate. The transport device 700 transports the substrate after the cleaning process has been performed to the spin rinse dryer 600. The spin rinse dryer 600 performs drying processing on the substrate. The transfer device 700 transfers the dried substrate to the transfer robot 110. The transfer robot 110 transfers the substrate received from the transfer device 700 to the cassette of the load port 100. Finally, the cassette containing the substrate is removed from the loading port 100.

Fig. 3 is a schematic diagram showing an example of a plating module provided with a board of this embodiment. As shown in FIG. 3, the plating module 400 of this embodiment is a so-called face-down type or cup type plating module. The plating module 400 includes a plating tank 401, a substrate holder 403, and a plating solution storage tank 404. The substrate holder 403 is configured to hold the substrate 402 such as a wafer with its plated surface facing down. The plating module 400 has a motor 411 that rotates the substrate holder 403 in the circumferential direction. In the plating tank 401, the anode 410 is arranged so as to face the substrate 402.

The plating module 400 further has a plating solution storage tank 408. The plating solution in the plating solution storage tank 404 is supplied to the plating tank 401 from the bottom of the plating tank 401 by the pump 405 passing through the filter 406 and the plating solution supply pipe 407. The plating solution overflowing from the plating tank 401 is received by the plating solution storage tank 408 and returned to the plating solution storage tank 404.

The plating module 400 further has a power source 409 connected to the substrate 402 and the anode 410. The motor 411 rotates the substrate holder 403, and the power supply 409 applies a specified voltage between the substrate 402 and the anode 410, so that the plating current flows between the anode 410 and the substrate 402, and the plating is formed on the plated surface of the substrate 402. Laminated.

The plate 10 for adjusting the electric field is arranged between the substrate 402 and the anode 410. In addition, a paddle 412 is arranged between the base plate 402 and the plate 10. The paddle 412 is moved back and forth parallel to the substrate 402 by a driving mechanism not shown in the figure to stir the plating solution, and a strong flow of the plating solution is formed on the surface of the substrate 402.

FIG. 4 is a front view of the board 10. As shown in FIG. 4, the plate 10 has a plurality of holes 12 that are round (perfect circle) or long holes. The hole 12 penetrates between the surface and the back surface of the plate 10 and constitutes a path for the plating solution and the ions in the plating solution to pass.

In the plate 10 of the present embodiment, a plurality of holes 12 are arranged on a plurality of (for example, three or more) virtual reference circles that are concentric and have different diameters with the center of the plate 10 as a reference. In other words, the plurality of holes 12 are arranged so as to be dispersed in the radial direction of the plate 10. Furthermore, the plate 10 is preferably such that the difference between the diameter of any reference circle and the diameter of the adjacent reference circle is constant. In other words, the holes 12 are preferably arranged at equal intervals in the radial direction. Thereby, the holes 12 can be more dispersedly arranged along the radial direction of the reference circle. In addition, it is preferable that the plate 10 has a plurality of holes 12 arranged at equal intervals along the circumferential direction on the reference circle. Thereby, the holes 12 can be dispersedly arranged along the circumferential direction of the reference circle. In addition, the term "equal interval" here is not limited to a numerically completely equal interval, and may also include some deviations caused by errors in machining and the like. In addition, in the example of FIG. 4, the entire outline of the plurality of holes 12 (outside the hole forming range, the envelope of the outermost plurality of holes 12 from the outside) is circular, but it may be any shape other than circular. The hole forming range encompasses the inner area of the envelope of the plurality of holes 12 furthest from the center of the plate 10 from the outside.

In the example of FIG. 4, the hole 12 in the center and the outer periphery of the hole forming range of the plate 10 is formed as a long hole, and the hole 12 in the middle part between the center and the outer periphery is formed as a circular hole. In addition, at least one hole 12 of the central part or the outer peripheral part may be an elongated hole. In addition, the holes 12 on one or more reference circles including the reference circle of the innermost circumference of the central part can also be long holes, and the holes 12 on one or more reference circles including the reference circle of the outermost circumference of the outer circumference part can also be Long hole. In the present embodiment, the circular hole 12 is difficult to achieve a porosity close to the target porosity P (described later). Since the hole 12 is a long hole, it is possible to achieve a porosity close to or close to the target porosity P in each region of the hole formation range. Consistent porosity.

Next, the manufacturing method of the board 10 will be described. 5A and 5B are flowcharts of the manufacturing process of the display panel 10. First, prepare the board 10 which becomes the material of the board 10 and has not yet drilled 12 (step S201). The board 10 that has not yet been drilled 12 is made of an electrically insulating material, for example, PVC (polyvinyl chloride) or the like.

Next, the target porosity P of the plate 10 is set (step S202). Here, the porosity can be expressed as "the total area of the plurality of holes 12/the area of the region where the holes 12 are formed (range area)". In the following description, the entire area of the plurality of holes 12 is referred to as the total hole area. In addition, the range area is also referred to as the hole formation range area. The hole formation range corresponds to the area where the hole 12 is formed in FIG. 4. In addition, the so-called target porosity P is the target porosity used in the manufacturing process of the board 10. The target porosity P can be obtained by experiment or simulation in advance to obtain an appropriate value. Specifically, the target porosity P is determined to have a suitable target porosity P depending on the distance between the substrate 402 and the board 10. Therefore, the distance between the substrate 402 and the board 10 in the plating module 400 shown in FIG. 3 can be used. Obtain the appropriate target porosity P by experiment or simulation.

_{Next, the pore diameter D pore} and the range radius R of the hole 12 formed in the plate 10 are set (step S203). The pore diameter D _pore can be arbitrarily set according to empirical rules, etc., as long as it is a size that can be machined. The range radius R is the radius of the circular area (hole forming range) where the hole 12 is formed on the plate, and can be set arbitrarily according to the size of the plating tank 401, the substrate 402, and/or the anode 410 shown in FIG. 3, for example. In addition, in the present embodiment, when only "radial direction" or "circumferential direction" is referred to, it means "radial direction of range radius R" or "circumferential direction of range radius R".

After setting the target porosity P, the pore diameter D _pore , and the range radius R, the number of division ranges Div is calculated (step S204). Here, the division range, as shown in FIG. 6, has a certain wide ring-shaped range, and is a range in which a plurality of reference circles with concentric and different diameters are arranged respectively. Therefore, by determining the number Div of the division range, it is determined to what extent the holes 12 are dispersed and arranged in the range radius R direction.

FIG. 6 is a schematic diagram showing the area where the hole 12 is defined by the radius R of the range of the plate 10. The number of division ranges Div in the example shown in the figure is 6, and the division range N ₁ to the division range N _{6 are} sequentially displayed from the center side of the range radius R toward the outside. The so-called reference circle Cref _k indicates the position where a plurality of holes 12 (the center of the hole 12) are arranged, and is a circle formed by connecting the center points of the width of _{each division range N k.} In addition, "k" in this embodiment is an algebra showing the number of the division range (1 to 6 in this embodiment). The division range N ₁ includes the center of the range radius R, which is different from the other division ranges N ₂ to N ₆ , and is circular. The reference circle radius Rref _k is a radius based on the center of the range radius R of each reference circle Cref _k.

As shown in FIG. 6, the range radius R corresponds to the diameter of the outer side of the _{maximum division range N k} (the example of the illustration is the division range N _{6 ).} In addition, the difference AP of the divided range radius R is the difference in the radial direction between _{each divided range N k} and the adjacent divided range N _{k + 1} (or divided range N _{k-1 ).} In other words, the difference AP of the divided range radius R can also be referred to as the width of _{each divided range N k.}

The hole 12 of the plate 10 has a pore size D _pore . The pore area S _{pore of the pore} 12 can be represented by π*(pore diameter D _pore /2)^2. The hole 12 on the reference circle Cref _k of each division range N _{k is arranged at the position of the initial angle θ int_k from an arbitrary diameter, and is arranged} away from the hole 12 at every angular interval θ pitch_k. The initial angle θ _{int_k} and the angle interval θ _{pitch_k will be} described in detail later.

FIG. 7 is a schematic diagram illustrating the relationship between the circumferential space and the radial space of the plurality of holes 12. As shown in FIG. 7, the circumferential space Sc of the plurality of holes 12 corresponds to the separation distance in the circumferential direction of the plurality of holes 12 _{arranged on the reference circle Cref k of each division range.} In addition, the radial space Sr of the plurality of holes 12 corresponds to the separation distance of the plurality of holes 12 arranged on the reference circle Cref _{k of each division range N k in the range radius R direction.} Here, a plurality of holes 12 in order to uniformly disperse the plate 10 is configured, arranged in the circumferential direction, a plurality of reference holes on respective divisions N _k of the pitch circle Cref _k 12 in the radial direction pitch of Sc and Sr should be the same as or similar .

Therefore, by defining the circumferential distance Sc and the radial distance Sr of the plurality of holes 12 to be the same, the number of division ranges Div can be _{calculated from the target porosity P, the pore diameter D pore,} and the range radius R. Specifically, the number of division ranges Div can be expressed by the following formula. The number of division ranges Div =ROUND[SQRT{(4*range radius R^2*target porosity P)/(pore diameter D _pore ^2*π)}] From this, the circumferential distance Sc and the radial distance Sr can be calculated approximately The number of divisions Div. In addition, in this embodiment, the Round function is used, and the number of division ranges Div is formed into an integer by rounding. It is not limited to this, and any function that rounds the calculation result into an integer can also be used.

Continuing, the difference AP of the divided range radius R, the area _Sk of each divided range, the number of holes Pr _k in each divided range, and the reference circle radius Rref _{k of} each divided range are calculated (step S205). In this embodiment, _{the widths of the divided ranges Nk are} the same, and their widths are the same as the difference AP. Therefore, the difference AP can be represented by (range radius R/division range number Div), and can be calculated from range radius R and division range number Div.

The area S _{k of} each division range can be calculated as long as the difference AP is determined. Specifically, the divided range area S _k can be represented by (difference AP*k)^2*π-(difference AP*(k-1)^2*π, and can be calculated from the difference AP.

The number of pores Pr _k in each segmentation range can be calculated _{from the area S k of} each segmentation range, the target porosity P, and the pore diameter D _pore. Specifically, the number of holes Pr _{k in} each division range can be expressed by the following formula. The number of pores in each segmentation range Pr _k =ROUND ((area of each segmentation range S _k * target porosity P)/pore area S _pore ) In addition, this embodiment uses the Round function and rounds the range to The number of holes Pr _k forms an integer. It is not limited to this, and any function that rounds the calculation result into an integer can also be used.

The reference circle radius Rref _k can be calculated from the difference AP of the divided range radius R. Specifically, the reference circle radius Rref _k can be represented by (difference AP*(k-0.5)).

As described above, by the processing of step S205, the number of holes Pr _{k of the holes 12 formed in each division range N k is} calculated. However, the number of holes Pr _k in the division range N _k is an integer in the middle of the calculation. Further, each of the division range in order to calculate the area S _k lines each divided range of the number of holes Pr _k N _k used were derived from the division of the integer number range Div. Therefore, the total pore area S _act calculated from the number of pores in each segmentation range Pr _k (=the number of pores in each segmentation range N _{k Pr k} * pore area S _pore : corresponds to the actual porosity of each segmentation range); and from the target _{There will be a difference between the theoretical total pore area S theo} (=target porosity P*split range area S _k : target porosity corresponding to each split range) calculated as the target theoretical total pore area S theo calculated by the porosity P. Therefore, the total hole area S _act (total area of the holes 12) calculated based on the number of holes Pr _k in one division range N _k is calculated and theoretically calculated _{based on the target porosity P in the same division range N k} The error of the total hole area S _theo (theoretically the total area of the hole 12). Specifically, in this embodiment, the ratio of the total hole area S _act calculated from the integerized hole number Pr _k to the theoretical total hole area S _{theo is calculated for each division range N k} (step S206 ). Specifically, the ratio is expressed as (total pore area S _act /theoretical total pore area S _theo *100).

Continuing, each segmentation range is based on _{whether the error between the calculated total hole area S act} and the total hole area S _theo is less than a specified value. When it is greater than the specified value, the _{number of holes Pr k} of the hole 12 in _{the segmentation range N k} is increased, and Reduce the pore size D _pore . Specifically, in this embodiment, when _{the error between the total hole area S theo} and the total hole area S _act is less than 2% (step S207, Yes), the process proceeds to step S211 (FIG. 5B ). In addition, when _{the error between the total pore area S theo} and the total pore area S _act is greater than 2% (step S207, No), the number of pores Pr _{k in the segmentation range N k} is 2.25 times, and the pore diameter D _pore Reduce to 2/3) (step S208). When the number of holes Pr _k reaches 2.25 times, if the value has a decimal, it can also be rounded using any function. Thereby, in the division range N _k , the total pore area S _act (the actual porosity based on the number of pores Pr _k * pore diameter D _pore ) can be closer to the total pore area S _theo (target porosity). In addition, the increase in the number of pores Pr _{k and the decrease in the pore} diameter D pore at this time can be performed at any magnification within the range where the error of the total pore area S _act calculated from the changed number of pores Pr _k and the pore diameter D _{pore is less than 2%.} .

Continue to calculate the inter-hole spaces Sc and Sr calculated by the adjusted number of holes Pr _k and the pore diameter D _pore , and determine whether the inter-hole space Sc and the inter-hole space Sr are larger than the minimum mechanically machined inter-hole space Ss (step S209). Step S209 is implemented for each division range.

Figure 8 shows that the plurality of holes 12 on the outer side are on the reference circle Cr _k (radius Rref _k ), and the plurality of holes 12 on the inner side are on the reference circle Cr _k-1 (radius Rref _k-1 ). The space between the holes Sc is the space between the holes 12 in the circumferential direction, and as shown in FIG. 8, it can be determined by the distance between the centers of the holes 12 adjacent in the circumferential direction _{on the reference circle Cr k} (radius Rref _k) The pitch Pc in the circumferential direction is obtained by subtracting the total of the radii of the holes 12 adjacent in the circumferential direction. Specifically, it can be calculated by the following formula. Space between pores Sc=2π*Rref _k /Pr _k -D _pore ‧‧‧ (Formula 1)

In addition, the inter-hole space Sr is the space between the holes 12 adjacent in the radial direction, and as shown in FIG. The sum of the radii of the holes 12 adjacent in the radial direction is obtained. Specifically, it can be calculated by the following formula. Space between pores Sr=(Rref _{k -Rref k-1} )-D _pore ‧‧‧ (Formula 2)

Then, it is determined whether the calculated inter-hole space Sc and the inter-hole space Sr are larger than the minimum machinable inter-hole space Ss, that is, it is determined whether the following is satisfied. Sc≧Ss and Sr≧Ss‧‧‧ (Formula 3) As a result, when the inter-hole space Sc and the inter-hole space Sr are greater than the minimum inter-hole space Ss, step S211 (FIG. 5B) is entered.

When the inter-hole space Sc or the inter-hole space Sr is smaller than the minimum inter-hole space Ss, _{the hole 12 of the division range N k} is made into a long hole (step S210). Specifically, the number of holes Pr _k and the pore diameter D _pore adjusted in step S208 are restored, and as shown in Figures 9 and 10, the circular hole 12 is turned into a long hole extending along the circumference of the reference circle. 12. For example, in the case of milling cutter processing, the length/area of the long hole is controlled by the length of the track processed by the end milling cutter. In Fig. 9, 121 is the circular part corresponding to the shape of the front end of the end mill at the starting point of end mill machining, and 122 shows the circular part corresponding to the shape of the front end of the end mill at the end of end mill machining. The circular part connecting the circular part 121 and the circular part 122 (the centers C ₁₂₁ and C _{122 of} each circular part) represent the trajectory of the end mill.

The number of holes in the elongated holes 12 will not appear as the film thickness distribution on the wafer (the elongated holes should not be too long), and should be selected by keeping the minimum inter-hole space Sc and forming as many elongated holes as possible. _{In this embodiment, the number of holes Pr k of the long holes 12 and the center angle θ L} of the reference circle corresponding to the track length of the long holes 12 are obtained by ensuring the minimum space Sc between the holes and realizing the maximum number of holes (refer to the figure) 11). Hereinafter, the calculation method of the _{number of holes Pr k} and the central angle θ _L will be described with reference to FIGS. 11 and 12.

In addition, if the elongated hole is formed in step S210, since the error of the total hole area is larger than the division range of the specified value (No in step S207), the hole 12 is from the circle near the center of the center of the hole forming range with a small number of holes. Shape change into a long hole.

As shown in Fig. 11, the total inter-hole space Sc between adjacent long holes 12 _{in the reference circle Cref k} can be obtained by subtracting the total length of the long holes 12 from the circumferential length _{of the reference circle Cref k where the long holes 12 are arranged} And figure it out. Specifically, it can be calculated by the following formula. The sum of the space between holes Sc = 2π*Rref _k -(2π*Rref _k ＊θ _L /360+D _pore )*Pr _k ‧‧‧ (Formula 4) and the space between holes Sc is greater than the minimum space between holes Ss Way, satisfy the following formula. 2π＊Rref _k -(2π＊Rref _k ＊θ _L /360+D _pore )＊Pr _k ≧Ss＊Pr _k ‧‧‧ (Formula 5) In formula 5, the left side is the space between holes in the _{reference circle Cref k} The total of Sc, on the right is the total _{of the minimum space between holes Ss in the reference circle Cref k} , and corresponds to the condition that the space between holes Sc is greater than the minimum space between holes Ss.

Furthermore, in order to make _{the porosity of the divided range N k} forming the long holes 12 equal to the target porosity P, in order to make the total area of the long holes 12 (total pore area S _act ) equal to the target porosity calculated from the divided range N _k The total hole area S _theo needs to satisfy the following formula. S _theo /Pr _k =π(D _pore /2) ² ＋{π(Rref _k ＋D _pore /2) ² -π(Rref _k -D _pore ) ² }*θ _L /360 (Equation 6) Here, on the left porosity lines dividing the target range of the P N _k multiplied by the area of the division range N _k is calculated pore area S _theo wholly divided by the long hole 12 of the hole by the number of Pr _k. On the right, the central angle θ _{L of the} long hole 12 is used to indicate the area of a long hole. As shown in Fig. 12, π(D _pore /2) ² represents the area of the semicircles 121-1 and 122-1 that merge the two ends of the elongated hole 12. {π(r+D _pore /2) ² -π(rD _pore ) ² }*θ _L /360 represents the area of the semicircular annular part 123 except for the two ends of the elongated hole 12.

By expressing θ _L with Pr _{k in} Equation 6, and substituting it into θ _{L in Equation 5, the number of holes Pr k} of the largest long hole satisfying Equation 5 can be obtained. In addition, substituting the calculated number of holes Pr _k into Equation 6 to obtain θ _L. Therefore, by determining the hole number Pr _{k of the} long holes 12 and the central angle θ _L , the space between the holes Sc can be secured, and the total hole area (porosity) of the long holes 12 in the _{division range N k can be made to be the target total hole} The area S _theo (target porosity P) is the same or close. In addition, since the elongated hole 12 is formed by extending the original circular hole 12 in the circumferential direction, the hole diameter D _{pore is} not changed during the process of making the circular hole 12 into an elongated hole. Therefore, there is no need to consider the space Sr between the holes in the radial direction.

Next, step S211 based results from experiments or simulations, a thickness of the entire substrate is formed of a flat profile, the adjustment range of the pore radius R, the porosity of N _k Pk of each divided range. This embodiment does not change the range radius R set in step S203, so that the pore diameter D _pore of one or more of the divided ranges N _{k including the outermost divided range N k} is set to 0, which substantially forms the area of the hole. Adjust the way the radius (the actual range radius) is reduced. This prevents recalculation due to resetting the range radius R. In addition, the target porosity P is increased in one of the pore diameters D _pore =0 or one or the plurality of division ranges N _k inside the plurality of division ranges N _k.

The outer periphery (edge portion) of the substrate 402 tends to increase in film thickness due to the electric field surrounding it. Especially as shown in FIG. 3, when a paddle 412 is provided between the substrate 402 and the board 10, in order to ensure the installation space and movement space of the paddle 412, it is necessary to increase the distance between the substrate 402 and the board 10 and plating The dimension of the groove 401 in the horizontal direction. Therefore, the influence of the electric field surrounding the outer periphery of the substrate 402 becomes greater, and as shown in FIG. 13(a), the tendency of the film thickness at the edge of the substrate to become thicker. Therefore, in order to suppress the increase in the film thickness of the outer peripheral portion of the substrate 402, the radius R of the hole formation range is optimized (reduced) (FIG. 13(b)), and the division range N _{k corresponding to the portion of the low film thickness is adjusted} The pore area (porosity Pk) is optimized (increased) (Figure 13(c)). The paddle 412 is omitted in FIG. 13.

Specifically, as shown in FIG. 13( b ), the range radius R is reduced to weaken the electric field reaching the outer periphery of the substrate 402. However, just reducing the range radius R, as shown in the figure, produces a portion with a film thickness smaller than the central portion side in the outer peripheral portion of the substrate. Therefore, as shown in FIG. 13(c), the porosity (target porosity P) of the outer periphery of the hole formation range of the plate 10 corresponding to the outer periphery of the substrate 402 is increased, and the film thickness of the periphery of the substrate 402 is increased Therefore, the film thickness distribution of the entire substrate 402 can be made flatter.

Next, change the range of the radius R, the target porosity P, to respective divisions N _k of the whole pore area _{S act (π (D pore /} 2) 2) * Pr k becomes a target porosity after the change / target before the change The pore size D pore is adjusted in a manner of _{multiplying the} porosity (step S212). Specifically, in one of the pore diameter D _pore =0 or one or the plurality of division ranges N _k inside the plurality of division ranges N _k , the total pore area S _act (π(D _pore /2) ² )*Pr _{Increase the pore diameter D pore in such a way that k} becomes the target porosity after the change/the target porosity before the change times. The example in Fig. 13 includes the pore size D _pore of one or more of the outermost segmentation range. Pore =0 is the way to achieve the increased target porosity P in the inner one or more of the segmentation range. Increase the pore size D _pore.

When following steps S211 and S212, the actual range radius can be reduced (Figure 13(b)), and the pore area (porosity Pk) _{of the segmentation range N k corresponding to the part with low film thickness can be increased (Figure 13(c))} ). In addition, depending on the substrate, in order to make the film thickness distribution more even, it is also possible to add a division range outside the outermost division range to increase the substantial range radius. In addition, it can also be combined to reduce the pore area (porosity Pk) of a part of the division range, increase the pore area (porosity Pk) of a part of the division range and decrease the pore area (porosity Pk) of a part of the division range, etc., to make each division The range of pore area (porosity Pk) increases or decreases as needed.

Then, using the modified D _pore , the circumferential hole space Sc and the radial hole space Sr are obtained by formula 1 and formula 2, and it is determined whether Sc and Sr are larger than the minimum processing space Ss (step S213). As a result, when the inter-hole space Sc and the inter-hole space Sr are larger than the minimum inter-hole space Ss, the process proceeds to step S215.

When the inter-pore space Sc or the inter-pore space Sr is smaller than the minimum inter-pore space Ss, the pore diameter D _pore changed in step S212 is restored, and as described in step S210, the pore 12 changed in step S211 is used to achieve The target porosity P after the change is made into long holes (step S214). Then, it transfers to step S215. In addition, when the elongated pores are formed in step S214, since the segmentation range of the target porosity P is changed (step S211), the pore formation range is outside the circumference (one of the pore diameters D _pore =0 or a plurality of segmentation ranges N _{One or more divided ranges inside k} , that is, one or more divided ranges including the outermost divided range in the changed substantial range radius), the hole 12 is changed from a circular shape to a long hole. Here, in step S211, according to the film thickness distribution shown in FIG. 13, an example of changing the target porosity P at the outer periphery of the hole forming range of the plate 10 is explained. However, it can also be based on the plating film thickness on the substrate 402. Distribution, and adjust the target porosity P in any division range of the hole formation range of the plate 10. In addition, the adjustment of step S211 can be implemented regardless of whether the blade 412 is present or not.

Through the processing of step S202 to step S214, determine the number of division ranges Div, that is, the arrangement number of the holes 12 in the radial direction and the radial space Sr, and the arrangement of the holes 12 in the circumferential direction in _{the reference circle Cref k of each division range} number. Secondly, the arrangement angle of the holes 12 in each reference circle Cref _{k can be determined.} Specifically, the angular interval θ _{pitch_k} and the initial angle θ _{int_k} of the holes 12 arranged in each division range N _k are calculated (step S215 ). First, the angular interval θ _{pitch_k of the} holes 12 is represented by (360°/the number of holes in each division range Pr _k ).

Next, the calculation method of the initial angle θ _{int_k will be explained.} In the present embodiment, the initial angle θ _{int_k refers to} the angle of the hole 12 that is a reference to an arbitrary radius of the reference circle Cref _k. The plurality of holes 12 formed in the plate 10 are arranged on the reference circle _{at an angular interval θ pitch_k from the hole 12 serving as the reference. In this embodiment, the initial angle θ int_k is} calculated so that the centers of the three holes 12 respectively arranged on the three adjacent reference circles Cref _k are not arranged on any radius. Specifically, for example based respectively arranged in the divided range N _k of the reference circle to the division range Cref _k N _{k + 2} of the reference circle embodiment Cref _{k +} 12 are not in parallel on the same radius of the hole _2, are disposed at the division range is calculated _{The initial angle θ int_k} of the hole 12 from N _k to the division range N _{k + 2} . In addition, in the case of the elongated hole 12, the center of the hole 12 is a position at the center of the circumference passing through the centers of the circular parts 121 and 122 at both ends of the elongated hole (a position equidistant from the centers of the circular parts at both ends).

Form of one case of the present embodiment divides the range of N ₁ is the angle θ ₁ is set to the initial angular intervals _θ pitch_1, N ₂ and divides the range of the initial set angle θ _{2 (θ} pitch_1 + initial angular interval angle θ _1/2). Continuing, the initial angle θ _{3 of the} divided range N ₃ is set to (angle interval θ _{pitch_1} +(initial angle θ ₁ +initial angle θ ₂ )/2). That is, the initial angle θ _{1 of the arbitrary division range N k} can be calculated by the following formula. [Math 1]

In another example, the initial angle θ ₁ of the divided range N ₁ is set to the angular interval θ _{pitch_1} , and the initial angle θ _{2 of the} divided range N ₂ is set to the angular interval θ _{pitch_2} . The initial angle θ _{3 of the} divided range N ₃ is set to (angle interval θ _{pitch_3} + (initial angle θ ₁ + initial angle θ ₂ )/2). In addition, the initial angle θ _{4 of the divided range N 4} is set to an angular interval θ _{pitch_4} . Next, the initial angle θ _{5 of the} divided range N ₅ is set to (angle interval θ _{pitch_5} + (initial angle θ ₁ + initial angle θ ₂ + initial angle θ ₃ + initial angle θ ₄ )/2). That is, the initial angle θ _{i of the} arbitrary division range N _k , when i=2n (n is an integer greater than 1), can be calculated by the following formula. [Math 2]

In addition, when i=2n+1, the initial angle θ _{i of the arbitrary division range N k} can be calculated by the following formula. [Math 3]

_When the holes 12 are arranged on the reference circle Cref _{k of each division range N k with the initial angle θ int_k} and the angle interval θ pitch_k calculated by the two calculation examples listed above, they are respectively arranged on three adjacent reference circles Cref _k The centers of the three upper holes 12 are not arranged on any radius of the board 10. In addition, the aforementioned Mathematical Formula 1 to Mathematical Formula 3 are examples, _{and any initial angle θ int_k in which the centers of the three holes 12 respectively arranged on the three adjacent reference circles Cref k} are not arranged on any radius may be used. _{In addition, the initial angle θ int_k} can also be calculated according to the pattern of the holes 12 in each division range. _{Specifically, in the divided range of the hole 12 forming the long hole, the initial angle θ int_k} may be calculated by a method other than the above-mentioned example, and the approach to the adjacent divided range of the hole 12 is suppressed.

After calculating the initial angle θ _{int_k} and the angle interval θ _{pitch_k} of each division range N _k , according to the parameters calculated from step S202 to step S215, the division range N _k on the center side of the plate 10 is formed sequentially from the division range N ₁ Hole 12 (step S216).

As explained above, each division range will be reduced to the length of the hole when the space between the holes is smaller than the space between the minimum machining holes, so it can solve the problem of hole machining difficulties or there is no drilling diameter corresponding to the required hole diameter. In each division range, the total pore area of the holes actually formed can be made closer to or _{equal to the theoretical total pore area S theo calculated from the target porosity P.} That is, the porosity of the holes actually formed can be made closer to or consistent with the target porosity. In addition, in addition to the above reasons, there is no problem corresponding to the drilling diameter of the required hole diameter, or from the viewpoint of processing cost and other reasons, when it is judged that the long hole is suitable, the step S209 of FIG. 5A and FIG. 5B may not be followed. , S213 is determined as a result of long hole formation.

In addition, by adjusting _{the porosity Pk of each division range N k,} the porosity of the plate 10 can be changed locally. Thereby, the film thickness distribution of the plating on the substrate can be improved, and the in-plane uniformity can be improved. In addition, in order to adjust the film thickness of the outer periphery of the substrate, by adjusting the radius R of the hole forming range of the plate 10, and optimizing the porosity of each divided range of the hole forming range (for example, FIG. 13), the entire The film thickness of the substrate becomes flat. In addition, by adjusting the porosity, when the space between the holes is smaller than the minimum processing hole space, the hole can be processed to achieve the adjusted porosity by increasing the hole length.

Since the centers of the three holes 12 respectively arranged on the three adjacent reference circles Cref _k are not arranged on any radius of the plate 10, it is suppressed that the holes 12 are densely arranged on any radius, and therefore the local distribution of the holes 12 can be suppressed. Anisotropic.

Further, since the intermediate plate 10, on a reference circle Cref _k arranged along the circumferential direction of a plurality of spaced holes 12, holes 12 are densely arranged can be suppressed in the reference circle Cref _k, and to suppress local anisotropic pore distribution of 12.

Furthermore, in the plate 10, the difference between the diameter of _{the arbitrary reference circle Cref k} of the placement hole 12 and the diameter of the adjacent reference circle Cref _{k +1 is constant.} In other words, since the holes 12 are arranged at equal intervals in the radial direction, it is possible to prevent the holes 12 from being densely arranged in the radial direction and to suppress the local anisotropy of the hole 12 distribution.

Some aspects disclosed in this specification are described below. The first form provides a plate, which is arranged in a plating bath between the substrate and the anode, and has a hole forming range in which a plurality of holes are formed. The hole forming range has: a central part and a middle part outside the central part; And the outer peripheral part outside the middle part; the central part and the outer peripheral part of the hole forming range have a plurality of long holes, and the middle part of the hole forming range has a plurality of circular holes. The hole formation range can also be the entire board or a part of the board. For example, there may be an area where no hole is formed outside the periphery of the hole formation range.

With this configuration, the porosity of the distribution density of the pores can easily approach the desired target porosity at the center or the outer periphery of the pore formation range. For example, in the case of circular holes, the number of holes calculated from the target porosity will produce a decimal, and it needs to be integerized to determine the number of holes. Therefore, the porosity of holes formed with an integer number of holes, especially in the center part where the number of holes is small, will cause an error with the target porosity. In addition, because the porosity is close to the target, when the number of holes is increased and/or the hole diameter is decreased, the space between adjacent holes will be lower than the minimum machineable space, resulting in difficulty in machining, or combined There is no drill diameter corresponding to the required hole diameter. At this time, by forming a long hole in this part of the hole, the minimum space between the holes can be ensured, and the hole can be formed in a manner close to the target porosity.

In addition, in order to improve the in-plane uniformity of the plating film formed on the substrate, it is sometimes appropriate to change the target porosity of a specific part of the hole formation range in a different way from other parts. However, when the hole diameter (and/or the number of holes) is changed according to the changed target porosity, the space between the holes may sometimes be smaller than the minimum space between the holes. At this time, by forming long holes in this part of the holes, the holes can be formed in such a way that the minimum space between the holes is ensured and the porosity is close to the target.

Long holes can ensure the smallest space between holes and achieve the desired distribution density. The reason is different from that of circular holes. This is because the long holes suppress/prevent the change of the hole size in the radial direction of the plate; and suppress the increase in the number of holes, And adjust the size of the hole in the circumferential direction of the board, and the area of the hole can be adjusted accurately. In addition, for reasons other than the above reasons (there is no drilling diameter problem corresponding to the required hole diameter, the viewpoint of processing cost, etc.), when it is judged that forming a long hole is better than changing the hole diameter, the long hole can also be implemented. In addition, regardless of the necessity of changing the hole diameter, when it is judged that the elongated hole should be formed for any other reason, the elongated hole may be formed instead of the circular hole.

In addition, when the holes are arranged concentrically, the number of holes in the middle part is larger than that in the center part, and the porosity error due to the integerization of the number of holes is reduced, and the error tends to be smaller than the specified value. In addition, there is a tendency for the plating film to become thicker or thinner on the outer periphery of the substrate. For the purpose of improving the in-plane uniformity of the plating film thickness, it is sometimes desirable to change the hole diameter and adjust the target porosity outside the hole formation area. . Therefore, long holes are formed in the central part and/or the outer peripheral part to achieve a desired target porosity. In addition, the middle part is formed with a circular hole that is easier to process, so that the plate can be manufactured more easily.

The second form is like the plate of the first form, in which part or all of the aforementioned plurality of holes are formed on the circumference of a plurality of concentric circles, including the innermost circumference and one or more adjacent holes on the circumference are elongated holes , And/or one or more adjacent holes on the circumference including the outermost circumference are elongated holes.

In this configuration, by forming long holes on the innermost circumference, which has a large influence by the integerization of the number of holes, and the adjacent one or more of the circumferences, errors caused by the integerization of the number of holes can be suppressed. In addition, by forming a long hole corresponding to the outermost circumference of the outer periphery of the substrate where the plating film tends to be uneven, and a plurality of holes on the adjacent one or more circumferences, the degree of freedom in adjusting the target porosity can be improved. It can also improve the in-plane uniformity of the coating film on the substrate. At the center of the hole formation range, only the holes on the innermost circumference may be long holes. In addition, in the peripheral portion outside the hole formation range, only the holes on the outermost circumference may be long holes.

The third form is like the plate of the first or second form, in which the distribution density and porosity of the holes in the outer peripheral part are different from those of other parts.

In this form, by adjusting the target porosity of the outer periphery of the hole formation area differently from other parts, the thickness of the plating film on the outer periphery of the substrate where the plating film tends to become thicker can be locally adjusted, and the thickness of the plating film can be increased. The in-plane uniformity is improved.

The fourth aspect provides a plate which is arranged in a plating bath between the substrate and the anode, and has a hole forming range, which is formed with a plurality of holes, and the porosity of the hole distribution density outside the hole forming range and The other parts are different, and the aforementioned outer peripheral part has a long hole.

In this form, the target porosity is adjusted locally in the portion of the hole formation range of the plate corresponding to the portion where the plating film thickness is unevenly distributed on the substrate, and the in-plane uniformity of the plating film thickness can be improved. In addition, by adjusting the porosity with long holes, the adjustment range of the porosity can be expanded. For example, by adjusting the target porosity of the outer periphery of the hole formation area with long holes, the thickness of the plating film on the outer periphery of the substrate where the plating film tends to become thinner or thicker can be accurately adjusted locally. Improved in-plane uniformity.

The fifth form is the plate of the fourth form, in which a plurality of circular holes are provided in the middle part inside the outer peripheral part, and a plurality of long holes are provided in the center part inside the middle part.

In this form, by forming long holes in the central part, which has a large influence on the number of holes in the above integer, and forming the central part of the hole into a circular hole that is easy to process, the desired porosity can be achieved, and it can be easily Manufacture the board.

The sixth form is the same as the fourth or fifth form, in which the porosity of the central part and the middle part are equal.

In this configuration, by making the porosity of the center portion and the middle portion on the inner side of the outer peripheral portion equal, the in-plane uniformity on the inner side of the outer peripheral portion of the substrate can be improved.

The seventh form is the same as any one of the first to sixth forms, wherein the longitudinal direction of the elongated hole is along the circumference, and the elongated hole has: a semicircular portion at both ends and an annular portion in the middle a part of.

In this form, the long hole is formed by moving the end mill in the milling cutter processing along the circumference. By controlling the length of the track processed by the end mill, the length/area of the long hole can be controlled. Because the hole size can be suppressed/prevented from increasing in the plate diameter direction, the number of holes can be suppressed from increasing in the circumferential direction, and the hole size can be adjusted, the hole size can be ensured and the desired porosity can be achieved.

An eighth aspect provides a plating device, which includes: any one of the first to seventh aspects of the board; and a plating tank for accommodating the foregoing board. When this form is adopted, it is possible to provide a plating device that achieves the above-mentioned effects with respect to the plate of any one of the forms, and the in-plane uniformity of the plating film can be improved.

The ninth aspect is the plating device of the eighth aspect, which further includes a paddle, which is arranged between the substrate and the plate.

In this configuration, a strong flow of the plating solution is formed on the surface of the substrate by paddle stirring, and the in-plane uniformity can be improved. In addition, by arranging the blades to increase the distance between the substrate and the board, the sensitivity of the axis deviation between the substrate and the board can be alleviated. In addition, the electric field is usually concentrated on the outer periphery of the substrate, and the film thickness tends to increase. In addition, when there are paddles between the board and the substrate, in order to ensure the installation space and movement space of the paddles, the distance between the substrate and the board and the size of the plating tank in the plane direction become larger, and the electric field changes to the outer periphery of the substrate. Larger, the tendency of the film thickness to become thicker at the outer periphery of the substrate is more pronounced. Even in this case, by using the above-mentioned plate, the target porosity of the outer periphery of the plate can be adjusted, and the in-plane uniformity of the coating film on the substrate can be improved.

The tenth aspect provides a method for manufacturing a plate. The plate is arranged in a plating bath between the substrate and the anode, and has a plurality of holes, and includes: determining the radius of the range in which the plurality of holes are formed in the plate The range radius, the aperture of the plurality of holes, and the target porosity in the foregoing range within the foregoing range radius; according to the foregoing range radius, the foregoing aperture, and the foregoing target porosity, the foregoing range is divided into the center of the foregoing range A circular division range, and a plurality of division ranges having a ring shape with the same width as the aforementioned circular division range; and the aforementioned plurality of holes are formed on the reference circles respectively located in the aforementioned plurality of division ranges of the aforementioned plate; One of the division ranges or a plurality of division ranges forms a long hole on the aforementioned reference circle.

When this form is adopted, it is easy to make the porosity of the distribution density of pores close to the desired target porosity in each division range. That is, it is difficult to achieve the target porosity division range in the circular hole. By forming the hole into a long hole, the change of the hole size in the radial direction of the plate can be suppressed, and the hole size in the circumferential direction of the plate can be increased or reduced to ensure the hole Space, and increase or decrease the hole area. Thereby, the adjustment range of the porosity can be increased in each division range.

The eleventh aspect is like the tenth aspect of the board manufacturing method, which includes the following steps: each segmentation range is determined by dividing the total pore area of the target determined by the area of the segmentation range and the target porosity by the area corresponding to the aforementioned hole diameter The aforementioned hole area is integerized to determine the number of holes; each segmentation range determines whether the error between the total hole area formed by the aforementioned integer number of holes and the aforementioned target total hole area is greater than the specified value. If the aforementioned error is greater than the specified value, use The increase in the number of holes and the decrease in the hole diameter; and the change in the number of holes and the hole diameter results in that the space between the holes is smaller than the minimum space between the holes that can be processed, and the holes in the divided range are formed into long holes.

In the case of a circular hole, as described above, in the case of a circular hole, in order to reduce the error in the porosity caused by the number of holes calculated from the target porosity and rounded up, if the number of holes is increased and/or the hole diameter is reduced, there will be holes The space between the holes is lower than the minimum space between the holes, which causes difficulty in machining. In this case, by forming a long hole in this part of the hole, the minimum space between the holes can be ensured and the porosity can be close to the target.

The twelfth aspect, such as the tenth or eleventh aspect, includes the following steps: changing the aforementioned target porosity in at least a part of the division range, and changing the aforementioned target porosity after the change is achieved Aperture; and as a result of changing the foregoing aperture, when the space between holes is smaller than the minimum inter-hole space that can be processed by the foregoing holes, the plurality of holes corresponding to the division range are formed into long holes.

For the purpose of improving the in-plane uniformity of the plating film formed on the substrate, etc., it is sometimes appropriate to change the target porosity of a specific part of the hole formation range to make it different from other parts. However, when the number of holes and/or the hole diameter are changed according to the changed target porosity, the space between the holes will be smaller than the minimum space between the holes. In this form, by forming long holes in specific parts of the holes, the minimum space between the holes can be ensured, and the holes can be formed in a manner close to the target porosity.

The thirteenth aspect is the method for manufacturing a plate in any one of the tenth to twelfth aspects, wherein the space between the holes is determined by dividing the circumferential length of the reference circle by the number of holes and the difference between the hole diameter and the hole diameter. The space between the holes in the circumferential direction; and the difference between the reference circle radius of the adjacent division range and the space between the holes in the radial direction determined by the aforementioned hole diameter; in each division range, at least one of the space between the holes in the circumferential direction and the radial direction is smaller than In the case of the minimum space between holes, the plurality of holes are formed into long holes.

With this configuration, in each division range, the holes are elongated according to the space between the holes in the circumferential direction and the radial direction, so that the space between the holes in the circumferential direction and the radial direction can be ensured to be larger than the minimum space between the holes.

The fourteenth aspect is the manufacturing method of any one of the tenth to twelfth aspects, which includes setting a reference circle for arranging the plurality of holes in each division range, and the elongated hole has: a semicircular shape at both ends Part; and a part of the annular part therebetween, and includes the plurality of long holes formed by controlling the circumferential length or central angle of the reference circle between the centers of the semicircular parts at the two ends.

In this configuration, for example, by moving the front end of the processing tool along the circumference of the reference circle, the area of the long hole can be easily controlled. In addition, the radius of the reference circle and the radius of the circular hole can be used to accurately calculate the area of the long hole.

The fifteenth aspect is the manufacturing method of any one of the tenth to fourteenth aspects, wherein the elongated hole is formed by milling cutter processing, and the area of the elongated hole is controlled by controlling the track length of the end mill processing.

In this form, the desired long hole can be easily formed by machining with an end mill. In addition, since the length/area of the long hole is calculated using the radius of the circular shape at the front end of the end mill, the long hole size corresponding to the target porosity can be accurately set.

As mentioned above, the embodiments of the present invention have been described, but the above-mentioned embodiments of the present invention are intended to facilitate the understanding of the present inventors, and are not intended to limit the present inventors. The present invention can be changed and improved without departing from the scope of its gist, and the equivalents thereof are of course included in the present invention. In addition, within the scope of solving at least a part of the above-mentioned problems, or achieving at least a part of the effect, each element described in the scope of the patent application and the specification can be combined or omitted arbitrarily.

10: Plate 12: Hole 100: Load port 110: Transport robot 120: Aligner 200: Pre-wet module 300: Pre-dip module 400: Plating module 401: Plating tank 402: Substrate 403: Substrate holder 404: plating solution storage tank 405: pump 406: filter 407: plating solution supply pipe 408: plating solution storage tank 409: power supply 410: anode 411: motor 412: paddle 500: cleaning module 600: self Rotary rinse dryer 700: conveying device 800: control module 1000: plating device P: target porosity Pc: pitch D _pore : aperture S _pore : pore area R: range radius Div: number of division ranges N ₁ to N ₆ : Division range N _k : Division range Cref _k : Reference circle Rref _k : Reference circle radius AP: Difference θ _{int_k} : Initial angle θ _{pitch_k} : Angle interval θ _L : Center angle S _k : Division range area S _act : Total hole area S _theo : Total hole area Pr _k : Number of holes Sc: Space in the circumferential direction Sr: Space in the radial direction Sc: Space in the circumferential direction Sr: Space in the radial direction Sc: Space between holes Sr: Space between holes Ss: Minimum space between holes 121, 122: Circular part C ₁₂₁ , C ₁₂₂ : the center of the circular part

FIG. 1 is a perspective view showing the overall structure of the plating apparatus of this embodiment. Fig. 2 is a plan view showing the overall structure of the plating apparatus of this embodiment. Fig. 3 is a schematic diagram showing an example of a plating module provided with a board of this embodiment. Figure 4 is the front view of the board. Fig. 5A is a flow chart of the manufacturing process of the display panel. Fig. 5B is a flow chart of the manufacturing procedure of the display panel. Fig. 6 is a schematic diagram showing the area where the hole delineated by the radius of the board is formed. Fig. 7 is a schematic diagram illustrating the relationship between the space between holes in the circumferential direction and the space between holes in the radial direction. Fig. 8 is a schematic diagram illustrating the calculation method of the space between the holes in the circumferential direction and the space between the holes in the radial direction. Fig. 9 is a schematic diagram illustrating a method of processing a long hole. Fig. 10 is a schematic diagram illustrating the relationship between a circular hole and an elongated hole. Fig. 11 is a schematic diagram illustrating a method of arranging long holes. Fig. 12 is a schematic diagram illustrating a method of calculating the area of a long hole. FIG. 13 is a schematic diagram illustrating a method of improving the film thickness distribution of plating.

10: Board

12: Hole

Claims (15)

A plate is arranged in a plating tank between a substrate and an anode, and has a hole forming range formed by a plurality of holes. The hole forming range has: a center part; a middle part outside the center part; and in the middle The outer peripheral portion of the outer portion; the central portion and the outer peripheral portion of the hole forming range have a plurality of long holes, and the middle portion of the hole forming range has a plurality of circular holes. Such as the plate of claim 1, wherein part or all of the aforementioned plurality of holes are formed on the circumference of a plurality of concentric circles, including the innermost circumference and one or more adjacent holes on the circumference are long holes, and/ Or one or more adjacent holes on the circumference including the outermost circumference are long holes. For the board of claim 1 or 2, the porosity, which is the distribution density of the holes, is different in the aforementioned outer peripheral part from that in other parts. A plate arranged in a plating tank between a substrate and an anode, and having a hole forming range formed by a plurality of holes, and the porosity system as the distribution density of the holes on the outer periphery of the hole forming range and other parts The outer peripheral part has long holes, wherein the middle part inside the outer peripheral part has a plurality of circular holes, and the central part inside the middle part has a plurality of long holes. Such as the board of request item 4, The porosity of the aforementioned central part and the aforementioned middle part are equal. For the board of claim 4 or 5, in the aforementioned hole forming range, a plurality of holes are arranged in concentric circles. The plate of any one of claims 1, 2, 4, and 5, wherein the longitudinal direction of the elongated hole is along the circumference, and the elongated hole has: a semicircular portion at both ends and a circle in the middle Part of the ring part. A plating device is provided with: a plate according to any one of claims 1, 2, 4, and 5; and a plating tank for accommodating the aforementioned plate. The coating device according to claim 8, which is further provided with a paddle, which is arranged between the aforementioned substrate and the aforementioned plate. A method for manufacturing a plate. The plate is arranged between a substrate and an anode in a plating bath and has a plurality of holes. The manufacturing method includes: determining a radius of a range, wherein the radius of the range refers to forming the plurality of holes in the plate. The radius of the range of each hole determines the aperture of the plurality of holes and determines the target porosity in the foregoing range within the radius of the foregoing range; the foregoing range is divided according to the foregoing range radius, the foregoing aperture, and the foregoing target porosity Into a circular division range including the center of the aforementioned range, and a plurality of circular division ranges having the same width as the aforementioned circular division range; and formed on the reference circles of the plurality of division ranges of the aforementioned plate, respectively The aforementioned plural holes; One of the plurality of division ranges or the plurality of division ranges forms a long hole on the reference circle. For example, the manufacturing method of claim 10, which includes the following steps: each segmentation range is determined by dividing the total pore area of the target determined by the area of the segmentation range and the target porosity by the pore area corresponding to the aforementioned pore size, and integer To determine the number of holes; each segmentation range determines whether the error between the total hole area formed by the integer number of holes and the target total hole area is greater than the specified value. If the error is greater than the specified value, the number of holes is increased and The aforementioned hole diameter is reduced; and as a result of changing the number of holes and the hole diameter, when the space between the holes is smaller than the minimum space between the holes that can be processed, the holes in the divided range are formed into long holes. For example, the manufacturing method of claim 10 or 11, which includes the following steps: changing the aforementioned target porosity in at least a part of the division range, and changing the aforementioned pore size in a manner that realizes the aforementioned target porosity after the change; and changing the aforementioned pore size result, When the space between the holes is smaller than the minimum space between the holes that can be processed, the plurality of holes corresponding to the division range are formed into long holes. Such as the manufacturing method of claim 11, wherein the space between the holes includes: the circumferential length of the reference circle divided by the number of holes on the reference circle, and the difference between the hole diameter and the diameter in the circumferential direction. The space between the holes; and the difference between the radius of the reference circle of the adjacent division range and the space between the holes in the radial direction determined by the aforementioned aperture; In each division range, when at least one of the space between the holes in the circumferential direction and the radial direction is smaller than the minimum space between the holes that can be processed, the plurality of holes are formed into long holes. The manufacturing method of claim 10 or 11, wherein the elongated hole has: a semicircular part at both ends thereof; and a part of an annular part therebetween; and includes controlling the semicircular part at the both ends The length of the circumference or the center angle of the reference circle between the centers forms the plurality of long holes. The manufacturing method of claim 10 or 11, wherein the long hole is formed by milling cutter processing, and the area of the long hole is controlled by controlling the track length of the end mill processing.

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