TWI743288B - Foreign body detection device, foreign body detection method and storage medium - Google Patents

Abstract

[Problem] To provide a technology that can detect foreign objects flowing in the flow path with high accuracy. [Solution] A foreign object detection device including: a flow path part (15A-15K) through which the fluid supplied to the processed body (W) flows; and the flow direction of the fluid in the flow path part (15A-15K) and The light path crosses the foreign body detection area (50) in the flow path part (15A-15K). The laser light irradiation part irradiates the laser light; the light receiving element (45A, 45B) receives the light transmitted through the foreign body detection area (50) ); Set on the optical path between the flow path part (15A ~ 15K) and the light receiving element (45A, 45B) to collect light to the light receiving element (45A, 45B) and form a light collecting lens (63) (57); A detection unit (6) for detecting foreign matter in the fluid based on the signal output from the aforementioned light receiving element (45A, 45B). The width of the light receiving area facing the light collecting spot (63) in the light receiving element (45A, 45B) is smaller than the width of the light collecting spot (63).

Description

Foreign body detection device, foreign body detection method and storage medium

[0001] The present invention relates to a foreign body detection device, a foreign body detection method, and a storage medium provided with a computer program for executing the method, which optically detect foreign bodies in a fluid supplied to a to-be-processed body.

[0002] In the manufacturing process of a semiconductor device, there is, for example, a process of liquid processing a semiconductor wafer (hereinafter referred to as a wafer). For example, in the process of forming a photoresist pattern, various chemical liquids such as photoresist are used. The chemical liquid is discharged from a chemical liquid bottle through a pipe that is a flow path through a device such as a valve, and is discharged onto a wafer through a nozzle. In the chemical liquid supplied to the wafer, particles adhering to the pipes or various devices may be mixed, and bubbles may also be generated in the chemical liquid. In addition, a chemical solution containing a resin material, such as a photoresist, may also contain a so-called abnormal polymer component that is larger than the normal polymer component. [0003] For example, when particles, bubbles, or abnormal polymers are mixed into the photoresist, they may become a cause of development defects. It is known to monitor these foreign matters until the amount of foreign matters is lower than a set value. Pursue the treatment technology of the liquid medicine in the system. As a method of monitoring the foreign matter, there is a method of using a particle counter that irradiates the liquid medicine in the flow path with laser light and receives scattered light from the foreign matter to measure the amount of the foreign matter.　　[0004] On the other hand, with the progress of the miniaturization of the design specifications of semiconductor devices, the allowable particle size tends to gradually become smaller, and a technique for detecting finer foreign objects with high accuracy is required. However, because the smaller the foreign object to be detected, the smaller S (signal level)/N (noise level), and high-precision detection becomes difficult. When an abnormal polymer with a large size is to be detected in the photoresist, since the laser light intensity corresponding to a normal polymer with a small size will become noise, the high-precision detection of the abnormal polymer becomes difficult. For example, Patent Document 1 describes a technique for detecting particles in a chemical liquid by passing laser light through a flow path, but it is required to detect foreign objects with higher accuracy. [Prior Art Document] [Patent Document] 　　[0005] 　　 [Patent Document 1] JP 2016-103590 A

[Problems to be Solved by the Invention] 　　[0006] The present invention was completed based on these circumstances, and its purpose is to provide a technology that can detect foreign objects flowing in the flow path with high accuracy. [Means to Solve the Problem] 　　[0007] The foreign object detection device of the present invention is a foreign object detection device that detects foreign objects in the fluid supplied to the object to be processed, and includes: 　　 flow of the fluid supplied to the object to be processed　　The laser light irradiating part that irradiates the foreign body detection area in the flow path part with laser light in such a way that the flow direction of the fluid in the flow path part crosses the light path; 　　 receives the light passing through the foreign body detection area The light-receiving element; 　　 is provided on the optical path between the flow path portion and the light-receiving element to collect light to the light-receiving element and form a light-collecting point; The detection part of the foreign matter in the fluid; 　　 wherein the width of the light receiving area facing the light collecting point in the light receiving element is smaller than the width of the light collecting point. [0008] The foreign object detection method of the present invention is a foreign object detection method for detecting foreign objects in a fluid supplied to a processed body, and includes: The process of fluid; 　　 the process of irradiating the foreign object detection area in the flow path with laser light by the laser light irradiating part in such a way that the flow direction of the fluid in the flow path crosses the light path; 　　 through the light receiving element The process of light in the aforementioned foreign matter detection area; 　　 the process of collecting light to the light-receiving element by a light-collecting lens arranged on the optical path between the flow path portion and the light-receiving element to form a light-collecting point; 　　 by detecting Part, the process of detecting foreign matter in the fluid based on the aforementioned signal; 　　 the width of the light-receiving area facing the light-collecting point in the light-receiving element is smaller than the width of the light-collecting point. [0009] The storage medium of the present invention is a storage medium that stores a computer program of a foreign object detection device for detecting foreign objects in a fluid supplied to a processed body, wherein the aforementioned computer program is grouped into a group of steps to execute this Invented foreign body detection method. [Effects of the invention] 　　[0010] The foreign object detection device of the present invention includes: the flow direction of the fluid in the flow path part through which the fluid supplied to the object flows crosses the optical path, and the flow The laser light irradiating part for irradiating the laser light in the foreign object detection area in the path, and the light collecting lens that collects the light passing through the foreign object detection area and forms the light collecting point on the light receiving element. The light receiving element faces the aforementioned The width of the light-receiving area of the light-gathering spot is smaller than the width of the light-gathering spot. With such a configuration, it is possible to suppress the inclusion of noise in the signal output from the light-receiving element, and it is possible to detect foreign objects with high accuracy.

[Embodiment] 　　[0012] Fig. 1 is a schematic diagram of a coating and developing device 1 to which a foreign matter detection device of the present invention is applied. The coating and developing device 1 includes: photoresist coating modules 1A, 1B for processing by supplying chemical solutions to substrates such as wafers W to be processed, anti-reflective film forming modules 1C, 1D, and protective film Form modules 1E, 1F. These modules 1A to 1F are chemical liquid supply modules for supplying chemical liquid to the wafer W for processing. The coating and developing device 1 supplies various chemicals to the wafer W from the modules 1A to 1F, and after forming an anti-reflection film, a photoresist film, and a protective film for protecting the photoresist film during exposure, For example, the immersion-exposed wafer W is developed.　　[0013] The above-mentioned modules 1A to 1F are equipped with a liquid medicine supply path, and the coating and developing device 1 can detect foreign objects in the liquid medicine flowing in the supply path. The chemical liquid circulating in the above-mentioned supply path is supplied to the wafer W. Then, the supply of the chemical solution to the wafer W and the detection of foreign objects are simultaneously performed. The foreign matter includes, for example, particles, bubbles, and abnormal polymers having a larger particle diameter than the normal polymers constituting the chemical liquid. The detection of foreign objects is specifically, for example, detection of the total number of foreign objects flowing through a predetermined detection area of the flow path of the medical solution and the size of each foreign object during a predetermined period. The coating and developing device 1 is provided with a light supply unit 2 which guides the laser light output from the light source 21, for example, with a wavelength of 532 nm, to the detection of foreign objects provided in the modules 1A to 1F through the optical fiber 23. Unit 4.　　[0014] The modules 1A to 1F have roughly the same configuration. Here, the schematic configuration of the photoresist coating module 1A shown in FIG. 1 will be described. The photoresist coating module 1A includes, for example, 11 nozzles 11A to 11K, and 10 nozzles 11A to 11J discharge a photoresist to the wafer W as a chemical solution to form a photoresist film as a coating film. The nozzle 11K discharges the diluent to the wafer W. The diluent is supplied to the wafer W before the photoresist is supplied, and is a pre-wetting chemical solution for improving the wettability of the photoresist, and is a solvent for the photoresist. [0015] The nozzles 11A-11J are connected to the downstream ends of the liquid chemical supply pipes 12A-12J forming the supply path of the liquid chemical, and the upstream ends of the liquid chemical supply pipes 12A-12J are respectively connected to the supply source of the photoresist through the valve V1 13A～13J. The supply sources 13A to 13J of each photoresist include a bottle storing, for example, the photoresist, and a pump that pressure-feeds the photoresist supplied from the bottle to the nozzles 11A to 11J. The types of photoresist stored in the bottles of the supply sources 13A to 13J are different from each other, and one type of photoresist selected from ten types of photoresist is supplied to the wafer W.　　[0016] The nozzle 11K is connected to the downstream end of the liquid chemical supply pipe 12K, and the upstream end of the liquid chemical supply pipe 12K is connected to the supply source 13K through the valve V1. The supply source 13K has the same configuration as the supply sources 13A to 13J except that the aforementioned diluent is stored instead of the photoresist. That is, when the wafer W is processed, the timing at which the chemical liquid flows through the chemical liquid supply pipes 12A to 12K are different from each other. The liquid medicine supply pipes 12A to 12K are made of a flexible material, such as resin, and are configured so as not to hinder the movement of the nozzles 11A to 11K described later. Between the nozzles 11A to 11K and the valve V1 in the chemical liquid supply pipes 12A to 12K, there are interposed spectroscopic liquid tanks 15A to 15K. The spectroscopic liquid tanks 15A to 15K are configured as flow passages for measuring foreign objects, and foreign objects passing through the inside are detected. The details of the spectroscopic liquid tanks 15A to 15K will be described later.　　[0017] FIG. 2 shows an example of a more detailed configuration of the photoresist coating module 1A. In the figure, 31 and 31 are turntables, which suck and hold the inner center portion of each wafer W to maintain the level while rotating the held wafer W around a vertical axis. In the figure, 32 and 32 are cups, which surround the lower side and the side of the wafer W held by the turntables 31 and 31 to suppress the scattering of the chemical liquid. 33 in the figure is a rotating table that rotates around a vertical axis. Above the rotating table 33, a vertical support 34 that can move freely in the horizontal direction and a holder 35 for the nozzles 11A to 11K are provided. 36 is a free liftable along the support 34. The elevating portion 37 is an arm that can freely move the elevating portion 36 in a horizontal direction perpendicular to the moving direction of the pillar 34. An attachment/detachment mechanism 38 for the nozzles 11A to 11K is provided at the tip of the arm 37. The nozzles 11A to 11K are moved on the turntables 31 and between the brackets 35 by the coordinated operation of the rotating table 33, the support column 34, the elevating portion 36, and the arm 37.　　[0018] On the side of the rotating table 33 and the cup 32, a foreign object detection unit 4 is provided so as not to interfere with the moving arm 37 and the support 34. The foreign object detection unit 4, the light supply unit 2 described above, and the control unit 6 described later constitute the foreign object detection device of the present invention. FIG. 3 shows a plan view of the foreign object detection unit 4. The foreign object detection unit 4 includes a laser light irradiation unit 51, a light receiving unit 52, and a flow path array 16, and is configured as a particle counter of a light scattering method using forward scattered light, for example. In other words, when the light-receiving element receives scattered light caused by a foreign object, the foreign object is detected based on a change in the signal output from the light-receiving element.　　[0019] The downstream end of the above-mentioned optical fiber 23 is connected to the laser light irradiation section 51 through a collimator 42. For example, during the operation of the coating and developing device 1, light is constantly supplied from the light supply unit 2 to the optical fiber 23, and the light path of the shutter 41 described below is switched to switch the state of supplying light to the flow path array 16 and stop The state in which light is supplied to the flow path array 16. The optical fiber 23 has flexibility so as not to hinder the movement of the laser light irradiation unit 51 described later.　　[0020] The flow path array 16 will be described with reference to the perspective view of FIG. 4. The flow path array 16 forming the flow path portion of the chemical solution is made of quartz, is configured as an angular, horizontally long block, and includes 11 through-holes respectively formed in the vertical direction. The through openings are arranged along the longitudinal direction of the flow path array 16, and the through openings and the walls around the through openings are configured as the aforementioned spectroscopic liquid tanks 15A to 15K. Next, the spectroscopic liquid tanks 15A to 15K are formed as upright pipes, and the chemical liquid flows from above to below through the respective through ports constituting the spectroscopic liquid tanks 15A to 15K. The respective through ports of the spectroscopic liquid tanks 15A to 15K are defined as flow paths 17A to 17K. The flow passages 17A to 17K are configured in the same manner as each other, and are respectively interposed in each of the medicinal solution supply pipes 12A to 12K as previously described.　　[0021] Return to Figure 3 to continue the description. The above-mentioned laser light irradiation unit 51 and the light receiving unit 52 are provided so as to face each other while sandwiching the flow path array 16 from front to back. In the figure, 43 denotes a stage that supports the laser light irradiating unit 51 and the light receiving unit 52 from the lower side of the flow path array 16, and is constituted by a drive mechanism not shown in the figure to move freely in the left and right directions. By moving the stage 43 in this way, the laser light irradiation unit 51 can irradiate the light derived from the optical fiber 23 to one of the channels 17 selected from the channel 17A to 17K, and the light receiving unit 52 receives the light and irradiates it to the channel in this way. 17 and the light passing through the flow path 17. In other words, an optical path is formed in the flow path 17 so as to cross with the flow direction of the chemical liquid.　　[0022] FIG. 5 is a schematic configuration diagram of the laser light irradiation unit 51 and the light receiving unit 52. For the convenience of description, the direction from the laser light irradiation unit 51 to the light receiving unit 52 is referred to as the rear. The laser light irradiation unit 51 includes an optical system, and the optical system includes, for example, a condensing lens 53. In addition, although illustration is omitted in FIG. 5, as shown in FIG. 3, the above-mentioned shutter 41 is provided in the laser light irradiation unit 51.　　[0023] The above-mentioned collimator 42 irradiates laser light in a horizontal direction toward the rear side. The shutter 41 moves between the shielding position (shown as a chain line in FIG. 3) that shields the optical path between the collimator 42 and the collecting lens 53 and the open position (shown as a solid line in FIG. 3) retreated from the optical path. , Make the light path open and close. The condensing lens 53 includes a cylindrical lens and a lens called Powell lens or a lens for generating a ray of light, for example. The vertical direction of the flow direction of the liquid medicine is longer than the flow direction of the liquid medicine, so that the laser light is flattened. On the front side than the condenser lens 53, the cross section of the optical path (the cross section when viewed in the front and rear direction) is, for example, a slightly rounded shape. , For example, an ellipse having a long diameter along the left-right direction.　　[0024] In the optical path formed in the flow path 17A, a light collection area with a higher energy density becomes a foreign object detection area 50, and foreign objects entering the detection area 50 are detected. Since the optical path is formed in the flow path 17A as described above, the detection area 50 is horizontally long from side to side, and the area ratio of the detection area 50 to the area of the flow path 17A when viewed in plan is large. By forming such a detection area 50, the ratio of the number of detected foreign objects among the total number of foreign objects flowing in the flow path 17A becomes higher.　　[0025] Next, the light receiving unit 52 will be described. The light receiving unit 52 includes an optical system 54, a mask 61, and a light detecting unit 40 that are sequentially arranged from the front side to the rear side. The optical system 54 includes an objective lens 56 and a condenser lens 57 arranged on the front side and the rear side, respectively. The objective lens 56 turns the light passing through the dichroic liquid tank 15A into parallel light and collects the light by the condenser lens 57 To the light detection section 40.　　[0026] Next, the light detection unit 40 will be described with reference to the front view of FIG. 6. In addition, FIG. 6 shows the light detection unit 40 when viewed from the front position of the mask 61 to the rear. The light detection unit 40 is constituted by, for example, 64 light receiving elements formed of respective photodiodes, and the light receiving elements have the same configuration as each other. The light-receiving elements are arranged with an interval therebetween so as to form a 2×32 row and column, for example. Let the light-receiving element arranged on the upper side be the light-receiving element 45A, and the light-receiving element arranged on the lower side as the light-receiving element 45B. The left and right widths of the light receiving elements 45A and 45B indicated by L4 in the figure are 53 μm in this example. The same is true for the cross section of the optical path irradiated to the light detecting section 40. The long side is a flat ellipse along the left and right direction, and the light receiving element 45A is located in the upper half of the optical path and the light receiving element 45B is located in the lower half of the optical path. , To arrange the respective light-receiving elements 45A, 45B. The light-receiving element 45A and the light-receiving element 45B at the same position in the left-right direction form a set. Regarding these light receiving elements 45A and 45B, when viewed to the rear side, they may be indicated as 1 channel, 2 channel, 3 channel, ... 32 channels (ch) in order from the left, with channel (ch) numbers attached.　　[0027] The foreign object detection unit 4 includes a total of 32 circuit sections 46 respectively provided corresponding to the respective channels of the light receiving elements 45A and 45B. Referring to FIG. 7 to describe the circuit section 46, the circuit section 46 includes: transimpedance amplifiers (TIA) 47A and 47B provided at the rear of the light-receiving element 45A and the light-receiving element 45B, respectively, and a differential circuit 48 provided at the rear of the TIA 47A, 47B, respectively . The light-receiving element 45A and the light-receiving element 45B supply currents corresponding to the light intensity of the received light to the TIA 47A and 47B, and the TIA 47A and 47B output voltage signals corresponding to the supplied currents to the differential circuit 48. The differential circuit 48 outputs the voltage signal of the difference between the voltage signal from the TIA47A and the voltage signal from the TIA47B to the control unit 6 described later. The control unit 6 detects foreign objects based on the signal output from the above-mentioned differential circuit 48. Such foreign object detection based on the signals corresponding to the difference of the respective outputs from the light receiving elements 45A and 45B is for removing noise that is commonly detected in the light receiving elements 45A and 45B. The same is true for the above-mentioned circuit unit 46, and there are cases where the same channel number is attached to the channel number of the connected light-receiving elements 45A and 45B.　　[0028] The relationship between the light-receiving elements 45A and 45B and the detection area 50 of the spectroscopic liquid tank will be described in more detail using the schematic diagram of FIG. 8. The arrow of the two-dot chain line in the figure indicates the optical path from the laser light irradiation unit 51 to the light receiving element 45A group when light is irradiated to the flow path 17A of the spectroscopic liquid tank 15A. In addition, in FIG. 8, the mask 61 is omitted for convenience of description. When viewing the front side in the optical path of the flow path 17A, the upper half of the light collection area, that is, the detection area 50, is divided into 32 divided detection areas in the longitudinal direction, each of which is called 1ch division in order from the right end Detection area ~ 32ch divided detection area. The left-right width of one divided detection area indicated by L21 in the figure is, for example, 0.85 μm, and a symbol 59 is attached to each divided detection area. [0029] In the optical system 54, the 1ch divided detection area 59 corresponds to the 1ch light-receiving element 45A in one-to-one correspondence, the 2ch divided detection area 59 corresponds to the 2ch light-receiving element 45A in one-to-one correspondence, and the 3ch division The detection area 59 corresponds to the light-receiving element 45A of the 3ch in a one-to-one correspondence, and similarly, the divided detection area 59 and the light-receiving element 45A of the same order are configured to correspond to the light-receiving element 45A in a one-to-one manner. That is, the reaction light (light perturbed by the reaction) generated by the reaction of the foreign matter in the 1ch divided detection area 59 is almost completely irradiated to the 1ch light receiving element 45A, and the 2ch divided detection area 59 reacts with the foreign matter. Almost all of the generated reaction light (light perturbed by the reaction) irradiates the 2ch light-receiving element 45A. In this way of receiving light, for example, 85% or more of the laser light passing through the divided detection area 59 of each channel is received by the light receiving element 45A of the corresponding channel. In FIG. 8, solid arrows and dashed arrows indicate the optical paths of the reaction light irradiated from the divided detection regions 59 of different channels to the light receiving elements 45A of different channels.　　[0030] Light irradiation is performed in this way, and a signal corresponding to the foreign matter entering the detection area 50 is generated from the light receiving element 45A in any channel. For example, if only the light-receiving element 45A of the channel corresponding to the reaction light is not irradiated and the light-receiving element 45A of the other channel enters the light, the level of the current flowing to the light-receiving element 45A will be lowered, and the detection accuracy will be lowered. In other words, by configuring the divided detection area 59 and the light receiving element 45A to correspond to each other as described above, the detection accuracy of foreign objects is improved. [0031] Similarly, each of the divided detection areas 59 divided into 32 longitudinally divided into the lower half of the detection area 50, which is the light collection area, is called 1ch divided detection area 59 to 32ch divided detection area In the case of the area 59, the divided detection area 59 of one channel corresponds to the light-receiving element 45B of one channel. That is, the optical system 54 is configured such that the reaction light of the divided detection area 59 of one channel is irradiated to the light receiving element 45B of one channel. [0032] Furthermore, the light receiving elements 45A, 45B having multiple channels as described above are constructed because the energy of the laser light received by one light receiving element 45 (45A, 45B) is suppressed, so that the The shooting noise caused by the fluctuation of the photon of the emitted light is reduced and the SN ratio (S/N) is increased. This is also because the number of normal polymers flowing through the detection area corresponding to one light receiving element 45 is suppressed. The noise caused by the polymer increases the SN ratio. In addition, although the optical path when the detection area 50 is formed in the spectroscopic liquid tank 15A is exemplified, the same optical path is formed when the detection area 50 is formed in the other spectroscopic liquid tanks 15B to 15K, and the detection of foreign objects is performed.　　[0033] Here, the mask 61 is explained in more detail. As shown in FIG. 6, the mask 61 includes, for example, 32 vertical and elongated openings 62, the openings 62 are arranged along the left and right, and the light-receiving elements 45A and 45B of each channel are located at the front. The left and right opening width L5 of the opening 62 is smaller than the width L4 of the light receiving elements 45A and 45B. Therefore, a part of the light irradiated from the divided detection area 59 to the light receiving elements 45A and 45B is blocked, and only the other part is received by the light receiving elements 45A and 45B. Among the light-receiving elements 45A and 45B, the area overlapping the opening 62 faces a light collecting point 63 described later, and forms a light-receiving area from which signals are output from the light-receiving elements 45A and 45B.　　 [0034] In FIG. 9, the optical path from the 3ch divided detection area 59 divided into the upper half of the detection area 50 to the 3ch light receiving element 45A is schematically represented by a dotted line. 9 and FIG. 6 show the condensing point 63 of laser light formed by irradiating the 3ch divided detection area 59 to the 3ch light receiving element 45A when the mask 61 is not provided. Because almost all of the light in the above-mentioned divided detection area 59 is irradiated to the light receiving element 45A corresponding to the divided detection area 59, the left and right width L6 of the light collection spot 63 is the same as the width L4 of the light receiving elements 45A and 45B, for example, 53μm. In other words, the width L5 of the opening 62 of the mask 61 is smaller than the width L6 of the light collecting spot 63. Therefore, when viewed in the direction in which the optical path is formed, that is, the front-rear direction, the area of the light-receiving regions of the light-receiving elements 45A and 45B is smaller than the area of the light-collecting spot 63.　　[0035] The same applies to the light receiving elements 45A and 45B other than the 3ch light receiving element 45A, facing the light collecting point 63 formed by irradiating light from the corresponding divided detection area 59 in the same manner. In other words, the light collecting point is formed from the light collecting lens 57 to cross the light receiving elements 45A and 45B of each channel for light irradiation. The light collecting point 63 shown in FIG. 6 and FIG. One of the light collection points of each of the light receiving elements 45A and 45B divides the detection area 59 into an area. That is, in this example, from the 64 divided detection areas 59 constituting each foreign object detection area, light is irradiated to each of the 64 light receiving elements 45 to form a light collection point 63, and the width of each light collection point 63 is larger than that of each light reception element. The width of the element 45 is still small.　　[0036] The reason for setting the above-mentioned mask 61 is explained. The photoresist flowing through the flow paths 17A to 17J contains a normal polymer for forming a photoresist film, and the polymer is irradiated to the light-receiving elements 45A, 45B by passing through the divided detection regions 59. The resulting scattered light generates background noise in the signals output from the light-receiving elements 45A and 45B. The larger the divided detection area 59 corresponding to one light receiving element 45A or 45B is, the larger the amplitude of the noise signal becomes because it is affected by the normal polymer.　　[0037] Even if a foreign object passes through the divided detection area 59 and a detection signal of the foreign object is output, it is difficult to detect a signal having an amplitude smaller than the amplitude of the noise signal. In other words, the smallest possible particle size (minimum measurable particle size) of the foreign matter is determined by the signal of the noise. Wherein, the above-mentioned mask 61 is provided so that the left and right widths of the light receiving elements 45A and 45B are smaller than the left and right widths of the light collection spot 63, thereby suppressing the area of the light receiving area in the light receiving elements 45A and 45B that can output signals due to light reception, The number of polymers detected is suppressed. Thereby, the level of the noise signal output from the light receiving elements 45A and 45B is suppressed, the SN ratio is improved, and smaller foreign objects can be detected, and the detection accuracy of foreign objects can be improved. [0038] In addition, because the amplitude of the noise signal is affected by the size of the polymer contained in the chemical solution and the refractive index difference between the polymer and the solvent, the appropriate cut value of the opening width L5 of the mask 61 depends on the drug. The type of liquid varies. As a representative here, as a setting method of the opening width L5 corresponding to the photoresist flowing through the flow path 17A, the setting method will be described with reference to the graph of FIG. 10. The horizontal axis of the graph represents the opening width L5 (unit: μm). The vertical axis of the graph represents the amplitude of the voltage signal output from the light receiving element 45A or 45B.　　[0039] The curve A1 of the graph is the one with the smallest particle size among the foreign objects to be detected in the photoresist, and represents the correspondence between the opening width L5 and the amplitude. Regarding the curve A1, the amplitude gradually increases as the opening width L5 shown in the graph increases, but the increase in the amplitude is gradually suppressed and finally reaches the apex. In addition, the corresponding relationship between the aperture width L5 and the noise amplitude output from the light receiving element 45A or 45B is expressed as a linear function shown by the straight line A2 in the graph. As the aperture width L5 increases, the noise amplitude also follows Get bigger. The fact that the characteristics of the detection signal of the foreign material and the noise are different from each other has become clear through experiments by the inventor. In addition, the curve A1 and the straight line A2 are calculated based on, for example, data obtained by experiments, for example, by the least square method. [0040] If the amplitude of the detection signal of the foreign object is smaller than the amplitude of the noise, it is difficult to distinguish the detection signal from the noise. Therefore, the signal intensity is set to the value of the opening width L5 in the range of the curve A1>the straight line A2. value. That is, the range of B1 to B2 shown in the graph becomes a candidate for the opening width L5. In addition, as in the case where the opening width L5 is small, the amount of polymer in the flow path 17A is small, and noise can be suppressed. However, as shown in the graph, the smaller the opening width L5 becomes, the steeper the slope of the curve A1 is. If the slope of the curve A1 becomes larger than the slope of the straight line A2, because the detected signal decreases faster than the noise, it is difficult to increase the SN Compare. Here, in the above-mentioned range of B1 to B2, it is preferable to set the opening width L5 so that the slope of the tangent to the curve A1 and the slope of the straight line A2 coincide with each other.　　[0041] The above-mentioned mutual agreement of the slopes means that when the slope of the straight line A2 is Y1/X1, the slope of the tangent to the curve A1 is included in the range of 0.95×(Y1/X1) to 1.05×(Y1/X1). In the figure, the tangent to the curve A1 whose slope coincides with the slope of the straight line A2 in this manner is represented as A3, and the opening width L5 corresponding to the tangent A3 is represented as B3. In addition, although the appropriate opening width L5 differs depending on the type of chemical liquid as described above, the appropriate opening width L5 is the same for the photoresist flowing through the flow paths 17A-17J. In this embodiment, the appropriate opening width L5 is the same. The flow paths 17A to 17J are provided as a common mask 61.　　[0042] Next, the control unit 6 (refer to FIG. 1) that is a detection unit for foreign matter installed in the coating and developing device 1 will be described. The control unit 6 is composed of, for example, a computer, and has a program storage unit (not shown). The program storage section stores the processing of the wafer W in each module, the detection of foreign matter based on the signal output from each channel of the light-receiving element as described above, and the in-coating performed by the transfer mechanism described later. A program in which commands (step groups) for each operation such as the transportation of the wafer W in the developing device 1 and the like are integrated. With this program, a control signal is output from the control section 6 to each section of the coating and developing device 1, thereby performing the above-mentioned operations. The program is stored in the program storage unit in a state of being stored in a storage medium such as a hard disk, an optical disk, a magneto-optical disk, or a memory card, for example.　　[0043] The modules other than the photoresist coating module 1A shown in FIG. 1 have been explained in advance, and the photoresist coating module 1B has the same configuration as the module 1A. Anti-reflective film forming modules 1C, 1D and protective film forming modules 1E, 1F, for example, in addition to supplying anti-reflective film forming chemicals and protective film forming chemicals instead of photoresist and diluents, and molds Groups 1A and 1B have the same configuration. The chemical solution for forming the anti-reflective film contains a polymer like the photoresist. For example, in the modules 1C to 1F, the chemical liquid is supplied to the wafer W as in the modules 1A and 1B.　　[0044] Next, referring to the sequence flow of FIG. 11, the processing of the wafer W and the detection of foreign matter performed in the photoresist coating module 1A will be described. In this sequence flow, each represents: the timing of setting the pressure of the pump in one of the supply sources 13 among 13A to 13K, and the movement of one nozzle 11 corresponding to one of the supply sources 13 among 11A to 11K by the arm 37 The time corresponding to the opening and closing time of the valve V1 of the liquid medicine supply tube 12 of one of the supply sources 13 from 12A to 12K, the time when the state of irradiating the laser light from the laser light irradiating section 51 and the state of stopping the laser light are switched, by The control unit 6 obtains the time point of the signal of each channel from the light detection unit 40. The above-mentioned time point at which the laser light irradiation state and the irradiation stop state are switched can also be referred to as the time point when the gate 41 of the foreign object detection unit 4 is opened and closed.　　[0045] Actually, although the wafer W is coated in the order of the diluent and the photoresist, for the convenience of description, the description will start from the operation when the photoresist is applied. First, in a state where the wafer W is transferred to the transfer turntable 31 and held, for example, the nozzle 11A is transferred to the wafer W, and the photoresist is sucked by the pump of the supply source 13A, thereby starting with a predetermined pressure. Perform tuning (time t1). For example, the movement of the nozzle and the operation of the pump are performed together, and the laser light irradiation unit 51 and the light receiving unit 52 are moved to a position where the spectroscopic liquid tank 15A is sandwiched. At this time, the shutter 41 of the foreign object detection unit 4 is closed.　　[0046] The nozzle 11A is stationary on the wafer W (time t2), and the wafer W is in a rotating state at a predetermined number of revolutions. Next, the valve V1 of the chemical liquid supply pipe 12A is opened, the shutter 41 is opened while the photoresist is pumped from the pump to the nozzle 11A at a predetermined flow rate, and the laser light is irradiated from the laser light irradiating unit 51 to pass through the spectroscopic liquid tank 15A. That is, in the flow path 17A of the spectroscopic liquid tank 15A, the detection area 50 is formed as described in FIGS. 8 and 9, and light is irradiated to the light receiving parts 45A and 45B (time t3). As illustrated in FIG. 9, a part of the light in the divided detection area 59 constituting the detection area 50 is shielded by the mask 61, and the signal output from each of the light receiving elements 45A and 45B to the circuit unit 46 is included in , The noise caused by the normal polymer in the photoresist becomes smaller.　　[0047] Next, the pressure-fed photoresist passes through the spectroscopic liquid tank 15A, and is ejected from the nozzle 11A to the center of the wafer W. The opening degree of the valve V1 increases until it reaches a predetermined opening degree and the increase in the opening degree stops (time t4). Then, the control unit 6 starts to obtain the output signal from the circuit unit 46 of each channel (time t5). When the foreign material flows through the flow path 17A and the detection area 50 flows from the top to the bottom, the light-receiving element 45A or the light-receiving element 45B corresponding to the channel of the divided detection area 59 through which the foreign material flows is outputted by the signal corresponding to the foreign matter, from the circuit The level of the output signal of section 46 changes. After that, the control unit 6 stops obtaining the output signal from the light receiving element 45 of each channel (time t6), and then closes the shutter 41, stops the light irradiation from the laser light irradiation unit 51, and closes the valve of the chemical liquid supply pipe 12A V1 (time t7), the discharge of the photoresist to the wafer W is stopped. The ejected photoresist extends to the periphery of the wafer W due to the centrifugal force, forming a photoresist film.　　[0048] Between the aforementioned time t5 and t6, the foreign matter count for each channel of the light-receiving element 45 is performed based on the output signal obtained from the circuit section 46 of each channel. Then, based on the output signal, the particle size of the foreign matter is measured and classified. In other words, the number of foreign objects is counted in each range of the plural number of particle diameters. Next, the number of foreign objects detected in each channel is totaled, and the number of foreign objects detected in the entire detection area 50 (as the total number of foreign objects) is calculated. Then, it is judged whether the total number of foreign substances is equal to or greater than the threshold value, and whether the number of foreign substances larger than a predetermined particle diameter is equal to or greater than the threshold value is judged. [0049] Next, when it is determined that the total number of foreign materials is greater than the threshold or the number of foreign materials larger than the predetermined particle size is determined to be greater than the threshold, the operation of the module 1A is stopped while a warning is output, and the wafer W is stopped. deal with. Specifically, the warning is, for example, a predetermined display on a monitor constituting the control unit 6 or a predetermined sound output from a speaker constituting the control unit 6. In addition, the output of the warning includes, for example, a display or a sound output for notifying the user of the spectroscopic liquid tank 15 whose output is abnormal among 15A to 15K. When it is determined that the total number of foreign materials is not greater than the threshold value and the number of foreign materials larger than the predetermined particle diameter is not determined to be greater than the threshold value, a warning output is not performed, and the operation of the module 1A is not stopped. In addition, each calculation and each determination mentioned above are performed by the control part 6 which forms a counting part. [0050] When the diluent is discharged to the wafer W, the nozzle 11K is transported to the wafer W instead of the nozzle 11A, the pump of the supply source 13A is replaced, and the pump of the supply source 13K is operated, and the liquid chemical supply pipe 12A is replaced. The valve V1 opens and closes the valve V1 of the chemical liquid supply pipe 12K, and instead of irradiating light to the spectroscopic liquid tank 15A and irradiating light to the spectroscopic liquid tank 15K, each part is operated in accordance with the sequence flow of FIG. 11. With this operation, along with the supply of the diluent to the wafer W, detection of foreign matter in the diluent is performed. In addition, although no polymer was contained in the diluent, as shown in the evaluation test described later, it was confirmed that by appropriately setting the opening width L5 of the mask 61, the impurities can be increased as in the case of detecting foreign matter in the photoresist. The signal is reduced and the detection accuracy of foreign objects is improved. The diluent supplied to the wafer W is supplied to the entire surface of the wafer W by the rotation of the wafer W like the photoresist. The photoresist supplied through the aforementioned flow path 17A supplies the wafer W supplied with the diluent in this manner. [0051] After supplying the diluent to the wafer W, when the photoresist included in a supply source other than the supply source 13A is supplied to the wafer W, the nozzle except for the used photoresist is transported to the wafer W , The pump corresponding to the supply source of the photoresist used is activated, the valve V1 of the supply pipe corresponding to the photoresist used is opened and closed, and the light is irradiated outside the spectroscopic liquid tank corresponding to the photoresist used, and the supply source 13A is connected The operation is the same when the photoresist is supplied to the wafer W. [0052] In the detection of foreign matter described in the flowchart of FIG. 11, in order to improve the measurement accuracy by detecting the foreign matter in a stable state in the liquid flow of the spectroscopic liquid tank 15A, the valve is adjusted as described above. The timing of the V1 switch and the timing when the control unit 6 starts and ends the acquisition of the output signal are shifted from each other. For example, the aforementioned time period t4 to t5 is 10 microseconds to 1000 microseconds, and the time period t6 to t7 is 10 microseconds to 100 microseconds. Although the operation of the module 1A will be described as a representative, the other modules 1B to 1F also perform the supply of the chemical solution to the wafer W and the detection of foreign objects like the module 1A. [0053] According to the coating and developing device 1, a part of the flow path of the photoresist supplied to the wafer W, that is, the spectroscopic liquid tanks 15A to 15K constituting the measurement area of the foreign matter in the photoresist, is provided, and the The light-receiving elements 45A, 45B, which are irradiated by the light irradiating section 51 and transmitted through the spectroscopic liquid tanks 15A to 15K, and the width ratios of the regions for enabling the light of the light-receiving elements 45A, 45B to be detected, are formed in the spectroscopic liquid tanks 15A to 15K. The width of the light collection point 63 of each of the divided detection areas 59 of the detection area 50 is also a small mask 61. Therefore, the level of noise included in the output signal from the light receiving elements 45A and 45B is suppressed, and as a result, the SN ratio of the output signal can be increased. Next, the control unit 6 provided in the coating and developing device 1 can detect foreign matter in the photoresist with high accuracy. In addition, the appropriate correspondence between the width of the light collecting spot 63 and the width of the light receiving elements 45A and 45B is determined in accordance with the chemical liquid. That is to say, when the mask 61 is not provided, because the widths of the appropriate light-collecting lens 57 and the light-receiving elements 45A and 45B are different for each chemical solution, the widths need to be adjusted in order to set the appropriate correspondence relationship as described above, but the same as this When the mask 61 is provided in the embodiment, the opening width (width of the slit) of the mask 61 is adjusted in accordance with the chemical solution used in the device by simple adjustment, so that the appropriate correspondence relationship described above can be set. Therefore, it is possible to prevent the condensing lens 57 and the light-receiving elements 45A, 45B from increasing in size and simplify the device configuration, which has the advantage that the manufacturing cost of the device can be reduced.　　[0054] In addition, by performing such foreign matter detection, the cleanliness of the photoresist supplied to the wafer W can be monitored. Then, when the cleanness of the photoresist is lower than the predetermined reference, the operation of the module is stopped as described above, thereby suspending the processing of the subsequent wafer W in the module. Therefore, since the photoresist with low cleanliness can be prevented from being supplied to the subsequent wafer W, the reduction in production capacity can be prevented. Furthermore, among the chemical liquid supply pipes 12A to 12K, because the supply pipe 12 where the foreign matter is detected is specified, the user of the coating and developing device 1 can quickly perform maintenance and repairs after the operation of the module is stopped. . Therefore, it is possible to suppress the increase in the time during which the operation of the module is stopped, and as a result, it is possible to suppress the decrease in the productivity of the semiconductor product in the coating and developing device 1. [0055] Furthermore, when it is determined that the total number of foreign objects circulating in the detection area 50 is greater than or equal to the threshold as described above, and/or when it is determined that the number of foreign objects having a particle size larger than a predetermined particle size is greater than or equal to the threshold, it is regarded as The processing corresponding to this is not limited to warning output and module operation stop. For example, among the supply sources 13A to 13J of the photoresist, the photoresist is supplied to the nozzle 11 as the cleaning solution of the supply tube 12 from the supply source 13 corresponding to the spectroscopic liquid tank 15 that has made this determination, and the chemical liquid supply tube 12 is supplied to the nozzle 11 The foreign matter contained in it is removed from the nozzle 11. That is, the liquid medicine supply tube 12 is automatically washed. After this operation, the subsequent wafer W may be processed again.　　[0056] Next, a specific configuration example of the coating and developing device 1 will be described with reference to FIGS. 12 and 13. 12 and 13 are a plan view and a schematic longitudinal side view of the coating and developing device 1, respectively. The coating and developing device 1 is formed by linearly connecting a carrier block D1, a processing block D2, and an interface block D3. The interface block D3 is connected to the exposure device D4. The carrier block D1 carries the carrier C into and out of the coating and developing device 1, and is equipped with: a carrier C mounting table 71, a switch section 72, and a switch section 72 for transporting wafer W from the carrier C Agency 73.　　[0057] The processing block D2 is formed by sequentially layering the first to sixth unit blocks E1 to E6 for liquid processing of the wafer W from bottom to top. While dividing the unit blocks E1 to E6 into each other, the transfer mechanisms F1 to F6 are respectively provided, and the wafers W are transferred and processed in parallel to each other in the unit blocks E. Here, among the unit blocks, the third unit block E3 will be described with reference to FIG. 12 as a representative. The conveyance area 74 extends from the carrier block D1 to the interface block D3, and the aforementioned conveyance mechanism F3 is provided in the conveyance area 74. In addition, when viewed from the carrier block D1 to the interface block D3, a shelf unit U is arranged on the left side of the transport area 74. The shed unit U is equipped with a heating module. Moreover, when viewed from the carrier block D1 to the interface block D3, on the right side of the conveying area 74, the photoresist coating module 1A and the protective film forming module 1E are installed along the conveying area 74.　　[0058] The fourth unit block E4 and the third unit block E3 have the same configuration, and are provided with a photoresist coating module 1B and a protective film forming module 1F. In the unit blocks E1 and E2, in addition to the anti-reflective film forming modules 1C and 1D respectively replacing the photoresist coating modules 1A and 1B and the protective film forming modules 1E and 1F, and the unit blocks E3 and E4 Have the same composition. The unit blocks E5 and E6 are equipped with a developing module that supplies a developing liquid to the wafer W to develop the photoresist film. The development module has the same configuration as the modules 1A to 1F except for supplying the development liquid to the wafer W as a chemical liquid. [0059] On the side of the carrier block D1 in the processing block D2, there are provided: a tower T1 that spans the unit blocks E1 to E6 and extends up and down, and is freely liftable for receiving and transferring wafers W to the tower T1 The transport mechanism 75. The tower T1 is composed of a plurality of modules stacked on each other. The modules installed at each height of the unit blocks E1 to E6 can receive wafers between the transport mechanisms F1 to F6 of the unit blocks E1 to E6 W. These modules include: a receiving module TRS installed at the height position of each unit block, a temperature control module CPL for adjusting the temperature of the wafer W, a buffer module for temporarily storing a plurality of wafers W, And a hydrophobization treatment module that hydrophobizes the surface of the wafer W. In order to simplify the description, the above-mentioned hydrophobic treatment module, temperature control module, and the above-mentioned buffer module are omitted in the drawings. [0060] The interface block D3 is provided with towers T2, T3, and T4 extending up and down across the unit blocks E1 to E6, and is provided with a free lift for receiving and transferring the wafer W to the tower T2 and the tower T3. The transfer mechanism 76 is the transfer mechanism 76, the transfer mechanism 77 that is the liftable transfer mechanism for receiving and transferring the wafers W to the tower T2 and the tower T4, and the transfer mechanism 77 is used to transfer the wafer W between the tower T2 and the exposure device D4. The transfer agency 78 of the acceptance and entitlement. [0061] The towers T2 are stacked on each other: a receiving module TRS, a buffer module storing and holding a plurality of wafers W before exposure processing, a buffer module storing a plurality of wafers W after exposure processing, It is configured as a temperature control module for adjusting the temperature of the wafer W, but the drawings of the buffer module and the temperature control module are omitted here.　　[0062] The aforementioned light supply unit 2 is provided above the processing block D2, and the optical fiber 23 is routed downward in order to connect the light supply unit 2 to the modules 1A to 1F of the unit blocks E1 to E4. In addition, the above-mentioned control unit 6 is formed above the processing block D2, and is provided with the calculation of the number of foreign matter per channel based on the output signal from the circuit section 46 of each channel described above, the calculation of the total number of foreign matter, and the calculation of each channel. The calculation unit 60 for calculating the particle size of the foreign matter connects the calculation unit 60 and the modules 1A to 1F by wiring not shown.　　[0063] The following describes the transport path of the wafer W of the coating and developing device 1. The wafer W is transported from the carrier C by the transport mechanism 73 to the receiving module TRS0 of the tower T1 in the processing block D2. From the receiving module TRS0, the wafer W is distributed and transported to the unit blocks E1 and E2. For example, when the wafer W is transferred to the unit block E1, among the transfer module TRS of the tower T1, compared to the transfer module TRS1 corresponding to the unit block E1 (the transfer mechanism F1 can perform the wafer W The receiving and receiving module) to receive the wafer W from the aforementioned TRS0. When the wafer W is transferred to the unit block E2, among the transfer modules TRS of the tower T1, the transfer module TRS2 corresponding to the unit block E2 receives the wafer W from the aforementioned TRS0. The transfer of these wafers W is performed by the transfer mechanism 75. [0064] The wafer W distributed in this way is transported in the order of TRS1 (TRS2)→anti-reflective film forming module 1C(1D)→heating module→TRS1(TRS2), and then distributed to the corresponding by the transport mechanism 75 The receiving module TRS3 of the unit block E3 and the receiving module TRS4 corresponding to the unit block E4. [0065] The wafer W allocated to TRS3 (TRS4) in this way is divided into TRS3 (TRS4)→photoresist coating module 1A(1B)→heating module→protective film forming module 1E(1F)→heating mold The group is transported in the order of the receiving module TRS of the tower T2. Then, the wafer W is transported into the exposure apparatus D4 through the tower T3 by the transport mechanisms 76 and 78. The exposed wafer W is transported between the towers T2 and T4 by the transport mechanisms 78 and 77, and is transported to the receiving modules TRS15 and TRS16 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Then, it is conveyed in the order of heating module → developing module → heating module → receiving module TRS5 (TRS6), and is returned to the carrier C by the conveying mechanism 73.　　[0066] At this time, as shown in FIG. In addition, the light collection point 63 shown in FIG. 14 is a point formed on the front surface of the light receiving element 45 and on the same plane as the front surface. In other words, even if the mask 61 is not provided, the width of the light-receiving area that can detect light in the light-receiving elements 45A and 45B is smaller than the width L6 of the light-collecting spot 63, which can suppress normal polymers and solvents. The scattered light is irradiated to the light receiving elements 45A and 45B. [0067] In addition, the number of light receiving elements 45A corresponding to one light collecting point 63 is not limited to one, and a plurality of minute light receiving elements 45A are arranged corresponding to one light collecting point 63, and the output signals of each light receiving element 45A are summed up. Checkout is also possible. Similarly, for the light receiving element 45B, a plurality of light collecting points 63 may be provided. Also, in the aforementioned example, although a plurality of light-receiving elements 45 are provided and the light is condensed to each light-receiving element 45, only one light-receiving element 45 is provided, and one light-receiving element 45 is formed so as to face the light-receiving element 45. The aforementioned light collection point 63 may be configured such that the width of the light receiving area of the light receiving element 45 is smaller than the width of the light collection point 63.　　[0068] In addition, in the light receiving unit 52 shown in FIG. 15, the aforementioned mask 61 is provided so as to overlap in the front-rear direction. The light receiving unit is provided with a moving mechanism 64 that moves the masks 61 in the left-right direction. When each moving mechanism 64 moves the mask 61, the width of the overlapping area of the opening 62 of each mask 61 changes. The two masks 61 form one mask 65, and the opening width L5 of the mask 65 can be changed by the movement of each mask 61. With this configuration, among the flow paths 17A to 17K, the positions of the masks 61 in the light receiving unit 52 are adjusted so as to correspond to the opening width L5 of the liquid medicine flowing in the flow path for detecting foreign objects. . Therefore, in the mask 65, the size of the opening width L5 is changed in accordance with the chemical liquid that is the detection target of the foreign matter. Therefore, it is possible to detect foreign matter in the liquid medicine in each flow path with higher accuracy. [0069] In addition, although an example in which the present invention is applied to a light-scattered light method that uses forward scattered light is described, the present invention can also be applied to the diffraction light (diffraction pattern) generated by irradiating a foreign object with laser light. The particle counter that receives light by the light-receiving unit 40 and detects foreign matter based on the change in the output signal caused by the received light of the diffraction pattern can also be applied to a particle counter that detects foreign matter by a method called the IPSA method. In other words, the application of the present invention is not limited to a particle counter having a specific measurement principle.　　[0070] In addition, the chemical liquid that is the subject of foreign matter detection is not limited to the above-mentioned photoresist and diluent. For example, the present invention is applicable to protective film forming modules 1E, 1F, and developing modules, and it is also possible to detect foreign matter in a chemical solution for protective film formation and foreign matter in a developing solution. Others, for example, a chemical solution supply device for forming an insulating film on the wafer W, a cleaning device for supplying a cleaning solution that is a chemical solution for cleaning the wafer W, and a device for bonding a plurality of wafers W to each other The adhesive can also be applied to the present invention as a device for supplying the chemical liquid to the wafer W and other chemical liquid supply devices.　　[0071] In addition, the present invention is not limited to being applied to a medical liquid supply device. For example, the flow path array 16 is provided with a spectroscopic liquid tank 15 common to a gas flow different from the spectroscopic liquid tank 15 through which the chemical liquid flows. Then, the atmosphere of the area where the wafer W is transported, such as the transport area 74 in the coating and developing device 1, can be supplied to the spectroscopic liquid tank 15 for the gas flow by a suction pump or the like. The area where the wafer W is transported also includes the area where the wafer W is processed such as the photoresist coating module 1A. Next, as in the case of detecting foreign matter in the chemical solution, a spectroscopic liquid tank common to gas flow is used in the flow of gas, and an optical path is formed in the spectroscopic liquid tank to detect foreign matter. Therefore, the present invention can not only detect foreign objects contained in the liquid supplied to the wafer W, but also detect foreign objects contained in the surrounding environment. In other words, foreign objects contained in the fluid can be detected. In addition, the present invention is not limited to the above-mentioned respective embodiments, and the respective embodiments can be combined with each other and changed as appropriate.　　[0072] [Evaluation Test] The evaluation test performed in connection with the present invention will be described.・Evaluation test 1 　　 As evaluation test 1, in the foreign object detection unit 4 provided with the above-mentioned mask 61, laser light is irradiated to the light receiving section 52 from the laser light irradiating section 51 through the flow path 17 (17A to 17K), and the measurement The noise level output by the light-receiving elements 45A and 45B. The noise level is the difference between the peaks in the voltage waveform. In addition, the flow state of the liquid medicine in the flow path 17 during laser light irradiation was changed in each test.　　[0073] In the evaluation test 1, in the laser light irradiation, a state where pure water was stored in the flow path 17 without forming a liquid stream was regarded as the evaluation test 1-1. A person who circulates pure water at 5 mL/min in the flow path 17 was used as the evaluation test 1-2. A person who circulated the diluent at 5 mL/min in the flow path 17 was used as the evaluation test 1-3. An evaluation test 1-4 was used to circulate a drug solution for forming an anti-reflection film in the flow path 17 at 5 mL/min. In addition, with respect to each of these evaluation tests 1-1 to 1-4, multiple masks 61 with different opening widths L5 were used for multiple times, and the opening width L5 was 5 μm, 15 μm, or 53 μm.　　[0074] The graph in FIG. 16 shows the result of Evaluation Test 1, the horizontal axis of the graph represents the opening width of the mask 61 (unit: μm), and the vertical axis of the graph represents the noise level (unit: mVpp). According to the graph, it is known that in the evaluation tests 1-2 to 1-4 in which the liquid medicine flows through the flow path 17, the smaller the opening width, the smaller the noise level, and there is roughly a linear relationship between the noise level and the opening width. Therefore, it is found that the straight line A2 described in FIG. 10 can be obtained. In addition, by appropriately setting the opening width, the noise level can be reduced and the SN ratio can be improved.　　[0075] ・Evaluation test 2 　　 In the foreign object detection unit 4, the laser light is irradiated to the light receiving unit 52 from the laser light irradiating unit 51 through the flow path 17, and the SN ratio is detected from the signals output by the light receiving elements 45A and 45B. In this light-receiving unit 52, a mask 61 was provided in the same way as the light-receiving unit 52 used in the evaluation test 1. In addition, in the irradiation of the laser light to the flow path 17, the chemical liquid circulating in the flow path 17 is changed for each test. As the evaluation test 2-1, pure water was circulated in the flow path 17, as the evaluation test 2-2, the diluent was circulated in the flow path 17, and as the evaluation test 2-3, the anti-reflection film formation chemical solution was circulated in the flow path 17. , As the evaluation test 2-4, let the photoresist circulate in the flow path 17. However, in these evaluation tests 2-1 to 2-4, in each of the chemical liquids circulating in the flow path 17, particles formed of PSL (polystyrene latex) with a particle size of 46 nm were mixed as foreign matter. For each of these evaluation tests 2-1 to 2-4, the measurement was performed using a mask 61 having an opening width L5 of 5 μm, 25 μm, and 53 μm, respectively. The width L6 of the light collecting spot 63 in this evaluation test is 53 μm as in the embodiment of the invention.　　[0076] The graph in FIG. 17 shows the result of Evaluation Test 2, the horizontal axis of the graph represents the opening width L5 of the mask 61 (unit: μm), and the vertical axis of the graph represents the SN ratio (unitless). As shown in the graph, in the evaluation tests 2-1 to 2-4, the SN ratio when the opening width is 25 μm and 5 μm is larger than when the opening width is 53 μm, and the SN ratio when the opening width is 25 μm is particularly large. When the opening width is 5μm or 53μm, the smallest measurable particle size is about 60nm, but when the opening width is 25μm, the smallest measurable particle size is about 40nm. By setting the opening width L5 to be smaller than the width L6 of the light collecting spot 63 in this way, the SN ratio becomes higher, and the effect of the present invention is exhibited.

[0077]1‧‧‧Coating and developing device 1A, 1B‧‧‧Photoresist coating module 15A～15K‧‧‧Spectroscopic liquid tank 17A～17K‧‧‧Flow path 4‧‧‧Foreign object detection unit 40‧‧‧Light detection part 50‧‧‧Detection area 51‧‧‧Laser light irradiation part 45A, 45B‧‧‧Light receiving element 6‧‧‧Control part 61‧‧‧Mask 62‧‧‧Aperture

[0011] 　　 [FIG. 1] A schematic configuration diagram of a coating and developing device according to an embodiment of the present invention.　　[Figure 2] A perspective view of the photoresist coating module included in the aforementioned coating and developing device.　　 [FIG. 3] A schematic configuration diagram of a foreign matter detection unit included in the aforementioned coating and developing device.　　 [FIG. 4] A perspective view of the constituent members constituting the flow path of the liquid medicine of the foreign body detection unit.　　[Figure 5] A plan view of the aforementioned foreign object detection unit.　　 [Fig. 6] A front view of the light detection part and the mask constituting the foreign object detection unit.　　 [FIG. 7] shows a block diagram of the circuit configuration included in the aforementioned foreign object detection unit.　　 [FIG. 8] shows a schematic diagram of the optical path in the aforementioned foreign object detection unit.　　 [FIG. 9] shows a plan view of the optical path from the flow path to the light receiving element forming the light detecting portion.　　[Figure 10] is used to illustrate the appropriate opening width of the aforementioned mask.　　[Figure 11] shows the sequence flow of the operations of each part of the coating and developing device.　　[Figure 12] A plan view of the aforementioned coating and developing device.　　 [Figure 13] A schematic side view of the aforementioned coating and developing device.　　 [Fig. 14] A schematic diagram showing the configuration of another foreign object detection unit.　　 [FIG. 15] A schematic diagram showing the configuration of the light receiving section of the foreign object detection unit.　　[Figure 16] shows the graph of the evaluation test results.　　[Figure 17] shows the graph of the evaluation test results.

17A‧‧‧Flow Path

40‧‧‧Light Detection Department

45A‧‧‧Light receiving element

50‧‧‧Checkout area

56‧‧‧Objective lens

57‧‧‧Condensing lens

59‧‧‧Divided detection area

62‧‧‧Opening

63‧‧‧Light Spot

Claims (7)

A foreign object detection device detects foreign objects in a fluid supplied to an object to be processed, and includes: a flow path part in which the fluid supplied to the object to be processed flows; and the flow direction and optical path of the fluid in the flow path part In an intersecting manner, a laser light irradiating section that irradiates laser light on the foreign body detection area in the flow path section; a light receiving element that receives light passing through the foreign body detection area; and light disposed between the flow path section and the light receiving element On the road, a light-collecting lens for collecting light to the light-receiving element and forming a light-collecting point; a detection unit for detecting foreign objects in the fluid based on the signal output from the light-receiving element; wherein, in the light-receiving element The width of the light-receiving area facing the light-collecting point is smaller than the width of the light-collecting point; and a mask provided with an opening for forming the light-receiving area is provided. The foreign body detection device according to claim 1, wherein the fluid is a chemical liquid containing a polymer for forming a film on the object to be processed. The foreign object detection device according to claim 1, wherein the fluid is a chemical liquid containing the polymer, and the width of the opening is changed in accordance with the type of chemical liquid flowing through the flow path. The foreign object detection device according to claim 1, wherein the width of the light-receiving area and the amplitude of the signal output from the light-receiving element are set on the horizontal axis and the vertical axis, respectively. The curve of the characteristic of the signal output from the light receiving element is set to the width of the light receiving area in a range that is larger in terms of the amplitude than the straight line representing the characteristic of the signal of the noise output from the light receiving element. The foreign object detection device according to claim 4, wherein in the pattern, the width of the light receiving area is set such that the slope of the tangent to the curve coincides with the slope of the straight line. A method for detecting foreign objects that detects foreign objects in a fluid supplied to an object to be processed, and includes: a process of supplying the fluid to the flow path part in order to supply the fluid to the object to be processed; The process of irradiating laser light on the foreign body detection area in the flow path part in the way that the flow direction of the fluid in the aforementioned flow path section crosses the light path; the process of receiving the light passing through the foreign body detection area through the light-receiving element; The process of collecting light to the light-receiving element and forming a light-collecting point by a light-collecting lens arranged on the optical path between the flow path part and the light-receiving element; the detection part detects the fluid in the fluid based on the signal foreign body The width of the light-receiving area facing the light-collecting point in the light-receiving element is smaller than the width of the light-collecting point; a mask with an opening for forming the light-receiving area is provided. A storage medium that stores a computer program of a foreign object detection device for detecting foreign objects in a fluid supplied to a processed body, wherein the aforementioned computer program is grouped into a group of steps to execute the foreign object detection method described in claim 6 .

Images