TWI738387B - Method, system and apparatus for measuring resistance of semiconductor device - Google Patents

Abstract

A method, an apparatus and a recording medium for measuring a resistance of a semiconductor device are provided. The method includes following steps: transferring a test device to a sample support, and sharpening the test device to be a needle-shaped micro sample; analysing a dopant concentration of the micro sample by using an atomic probe tomography device to obtain a distribution of the dopant concentration; and generating a cutting line cross a region of interest in the dopant concentration distribution with a linear fitting method, and analysing a change curve of the dopant concentration on the cutting line to measure a resistance of the region of interest.

Description

Method, system and device for measuring resistance value of semiconductor element

The disclosed embodiments relate to a method, system and device for measuring the resistance of a semiconductor device.

In the semiconductor manufacturing process, it is necessary to measure the electrical properties of semiconductor components, including resistance, resistivity, conductivity, etc., in order to detect component defects and modify the manufacturing process. Take Fin Field Effect Transistor (FinFET) as an example. It is necessary to measure the resistance value of each electrode (such as metal gate, metal source, metal drain) and the difference in the epitaxy layer. The resistance value between the electrodes.

The traditional resistance measurement method is to use a four-point probe measuring instrument to locate the area to be measured and use a probe for needle measurement. However, this measurement method requires four contact points to be created between the test probe and the object to be measured. Based on the specifications of the probe, it is difficult to achieve measurement for areas with a small size or a narrow structure.

The embodiments of the present disclosure provide a method for measuring the resistance of a semiconductor element, which is suitable for electronic devices with processors. This method includes the following steps: transfer the component to be tested to the sample support and use a cutting device to cut the component to be tested into a tip-shaped microscopic sample; use an atom probe analysis device to analyze the dopant concentration of the microscopic sample to obtain Doping concentration distribution; and using a linear fitting method to generate a tangent line across the region of interest in the doping concentration distribution, and analyze the change curve of the doping concentration on the tangent line to measure the resistance value of the region of interest.

The disclosed embodiment provides a semiconductor element resistance measurement system, which includes a transfer device, a cutting device, an atom probe analysis device, and a measurement device with a processor. The transfer device is used to transfer the component to be tested to the sample support. The cutting device is used to cut the component to be tested. The measurement device is coupled to the transfer device, the cutting device, and the atom probe analysis device, and is configured to: control the transfer device to transfer the component to be tested to the sample support, and control the cutting device to cut the component to be tested into a needle-shaped microscope Sample; control the atom probe analysis device to analyze the doping concentration of the microscopic sample to obtain the doping concentration distribution; and use the linear fitting method to generate a tangent line across the region of interest in the doping concentration distribution, and analyze the doping concentration on the tangent line , To measure the resistance value of the area of interest.

The embodiment of the disclosure provides a device for measuring the resistance of a semiconductor element, which includes a connection device, a storage device, and a processor. The connecting device is used for connecting the transfer device, the cutting device and the atom probe analysis device. The storage device is used for storing computer programs. The processor is coupled to the connection device and the storage device, and is configured to load and execute a computer program to: control the transfer device to transfer the component under test to the sample support, and control the cutting device to cut the component under test into a needle-shaped microscopic sample ; Control the atom probe analysis device to analyze the doping concentration of the microscopic sample to obtain the doping concentration distribution; and use the linear fitting method to generate a tangent across the region of interest in the doping concentration distribution, and analyze the doping concentration on the tangent Change the curve to measure the resistance value of the area of interest.

The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of elements and arrangements are described below to simplify the present invention. Of course, these are only examples and not intended to be limiting. For example, in the following description, forming the first feature on or on the second feature may include an embodiment in which the first feature and the second feature are formed in direct contact, and may also include the first feature and the second feature. An embodiment in which an additional feature may be formed between a feature and the second feature, so that the first feature and the second feature may not directly contact each other. In addition, the present invention may reuse reference numbers and/or letters in various examples. Such repeated use is for the sake of conciseness and clarity, and does not itself represent the relationship between the various embodiments and/or configurations discussed.

In addition, for ease of description, this article may use spatially relative terms such as "below", "below", "lower", "above", "upper" and other spatially relative terms to describe the Shows the relationship between one element or feature and another (other) element or feature. In addition to the orientations depicted in the drawings, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The device can have other orientations (rotated by 90 degrees or in other orientations), and the spatially relative descriptors used herein can also be interpreted accordingly.

In the disclosed embodiment, the Atom Probe Tomography (APT) technology is used to prepare a semiconductor element for electrical measurement into a microscopic sample that can be analyzed by an atom probe analysis device. After that, an atom probe analysis device is used to analyze the dopant (such as boron, phosphorus, arson, etc.) concentration of the microscopic sample to obtain the dopant concentration distribution, and the linear fitting method is used to find the desired measurement across the doping concentration distribution. The concentration curve of the area, and the resistance value of the measurement area is measured according to the curve change.

FIG. 1 is a block diagram of a system for measuring the resistance of a semiconductor device according to an embodiment of the disclosure. 1, the measurement system 10 of this embodiment includes a transfer device 12, a cutting device 14, an atom probe analysis device 16, and a measurement device 20, and its functions are described as follows:

The transfer device 12 is, for example, a micromanipulator, which can transfer a sample to a sample support, for example. The sample is, for example, a long strip or flake-like object obtained by using a focused ion beam (Focused Ion Beam, FIB) to trench, cut, etch, etc., a component to be tested (such as a semiconductor component). The material is, for example, tungsten, etc., which is not limited here. In one embodiment, the transfer device 12 welds the sample sheet to the sample support and cuts it into long strips for subsequent production of needle-shaped microscopic samples.

The cutting device 14 is, for example, a focused ion beam system, which uses a high-energy gallium ion beam (or helium ion beam, neon ion beam) to cut the test sample from top to bottom to produce a nanostructure. Among them, the cutting device 14 uses a patterned ion beam mask to shield the focused ion beam, so as to retain the shielded part of the test sample and remove the unshielded part, thereby cutting the test sample into a desired shape (such as a needle tip). ).

The atom probe analysis device 16 is, for example, an atom probe chromatograph, which applies high pressure to a needle-shaped microscopic sample under the conditions of ultra-high vacuum and liquid nitrogen cooling, so that atoms on the sample surface form ions and leave the needle tip. On the surface, the time of flight of the ion is measured by a time-of-flight mass spectrometer (mass spectrometer) to identify its composition. Among them, the atom probe analysis device 16 can draw a distribution map of the atoms of different elements in the sample in the nanospace by analyzing the atoms of different elements.

The measuring device 20 is, for example, a computer device such as a computer, a workstation, a server, etc., which is connected to the transfer device 12, the cutting device 14 and the atom probe analysis device 16 through a wired or wireless manner, for example, to control the transfer device 12, The cutting device 14 and the atom probe analysis device 16 operate and receive data to implement the resistance measurement method of the embodiment of the disclosure.

FIG. 2 is a block diagram of a device for measuring the resistance of a semiconductor device according to an embodiment of the present invention. Please refer to FIG. 1 and FIG. 2 at the same time. This embodiment illustrates the structure of the measurement device 20 in FIG. 1. The measurement device 20 includes components such as a connection device 22, a storage device 24, and a processor 26. The functions of these components are described as follows:

The connection device 22 is, for example, any wired or wireless interface device for connecting with the transfer device 12, the cutting device 14 and the atom probe analysis device 16 and transmitting commands or data. For wired methods, the connection device can be a universal serial bus (USB), RS232, a universal asynchronous receiver/transmitter (UART), an internal integrated circuit (I2C) or a serial Peripheral interface (serial peripheral interface, SPI), but not limited to this. For wireless methods, the connection device can support wireless fidelity (Wi-Fi), RFID, Bluetooth, infrared, near-field communication (NFC) or device-to-device (device-to-device). Device, D2D) and other communication protocol devices are not limited to this.

The storage device 24 is, for example, any type of fixed or removable random access memory (Random Access Memory, RAM), read-only memory (Read-Only Memory, ROM), flash memory (Flash memory), hard disk A disk or similar components or a combination of the above components are used to store computer programs that can be executed by the processor 26.

The processor 26 is, for example, a central processing unit (Central Processing Unit, CPU), or other programmable general-purpose or special-purpose microprocessors, microcontrollers, or digital signal processors. Processor, DSP), programmable controller, application specific integrated circuit (Application Specific Integrated Circuits, ASIC), programmable logic device (Programmable Logic Device, PLD) or other similar devices or a combination of these devices, the present invention does not This restriction. In this embodiment, the processor 26 can load a computer program from the storage device 24 to execute the resistance measurement method of the embodiment of the disclosure.

In detail, FIG. 3 is a flowchart of a method for measuring the resistance of a semiconductor device according to an embodiment of the disclosure. Please refer to FIG. 1, FIG. 2 and FIG. 3 at the same time. The method of this embodiment is applicable to the measurement device 20 shown in FIG. detailed steps.

In step S202, the processor 26 of the measuring device 20 controls the transfer device 12 to transfer the component to be tested to the sample support, and the cutting device 14 is used to cut the component to be tested into a needle-shaped microscopic sample. Among them, the cutting device 14 uses a high-energy ion beam to cut the component to be measured into a needle tip shape, for example. In order to prevent the device to be tested from being damaged during the cutting process, for example, before the device to be tested is transferred to the sample support, the device to be tested is subjected to a series of treatments, so as not to damage the electrical properties of the device to be tested. Strengthen the structure of the component under test.

In detail, FIG. 4 is a flowchart of a method for preparing a semiconductor device sample according to an embodiment of the disclosure. Please refer to FIG. 2 and FIG. 4 at the same time. The method of this embodiment is applicable to the measuring device 20 shown in FIG. 2, and the steps are as follows:

In step S402, the processor 26 controls a wafer delaminating device (not shown) to delaminate the protective layer on the device under test to expose the metal layer. In some embodiments, the processor 26 uses, for example, Chemical Mechanical Polishing (CMP) to remove the dielectric layer, deposited layer, etc. on the device under test, so as to expose the metal gate or other metal of the device under test. Floor. In some embodiments, the processor 26 uses ion etching to remove the passivation layer, insulating layer, etc. on the device under test, so as to expose the metal gate or other metal layers of the device under test. The embodiment of the present disclosure does not limit the type of de-layering device and the way of de-layering.

In some embodiments, when the processor 26 polishes the protective layer on the component to be tested, for example, it analyzes the element composition on the surface of the component after polishing, so that when the analyzed element composition includes a specific element, it is determined that the metal layer has been polished. , So as to control the wafer de-layering device to stop grinding. In some embodiments, the processor 26 determines that the metal layer has been polished to the metal layer when high-frequency oscillation (HfO) occurs in the analyzed signal, so as to control the wafer de-layering device to stop polishing.

In step S404, the processor 26 controls the etching device (not shown) to remove the electrode contacts on the metal layer. The etching device, for example, performs etching on a specific material (for example, tungsten, cobalt) to remove electrode contacts made of the specific material.

In step S406, the processor 26 controls the filling device (not shown) to fill the gap left by the electrode contact with the protective material. In some embodiments, the processor 26 uses physical vapor deposition (Physical Vapor Deposition, PVD), chemical vapor deposition (Chemical Vapor Deposition, CVD), atomic layer deposition (Atomic Layer Deposition, ALD), spin coating, for example. (Spin coating) and other technologies, replacing general metal gate protective materials (such as titanium nitride) with protective materials such as carbon, oxygen, or silicon dioxide organics or ALD compounds (compounds), and filling them until the electrode contacts are removed. The remaining gaps, thereby protecting the element structure of the filling area from being damaged during the subsequent cutting process.

For example, FIGS. 5A to 5E are examples of a method for preparing a semiconductor device sample according to an embodiment of the disclosure. 5A shows the structure of the device under test 50 after a complete manufacturing process, in which a metal gate MG and a metal drain MD are formed on the epitaxial layer EPI, and a metal gate MG and a metal drain MD are formed on the epitaxial layer EPI. Protection layer 52. In this embodiment, the protective layer 52 on the device under test 50 is removed by a wafer de-layering device to expose the metal gate MG and the metal drain MD (as shown in the device under test 50a in FIG. 5B), and then an etching device is used to remove The electrode contacts of the metal gate MG and the metal drain MD leave a gap 54 (as shown in the device under test 50b in FIG. 5C), and then a filling device is used to fill the gap 54 with a protective material 56 (as shown in FIG. 5D). The test component 50c is shown), and finally the processed component 50c is transferred and cut into a tip-shaped (the shape shown by the dashed line 58 in FIG. 5D) for subsequent analysis.

6A to 6D are microscopic images of the semiconductor device according to an embodiment of the disclosure. Among them, FIG. 6A is a microscopic image of the device under test after the electrode contacts are removed in FIG. 5C, and the image of the area 62 shows that the electrode contacts are removed and the gap is left. FIG. 6B is a microscopic image of the device under test after the protective material in FIG. 5D is filled. The image of the area 64 shows that the gap has been filled by the protective material. Fig. 6C is a microscopic image of the device under test of Fig. 5E being transferred to the sample support. Fig. 6D is a microscopic image of a microscopic sample in which the component to be tested is cut into a tip shape.

The disclosed embodiment is to perform atom probe analysis on the microscopic sample of the device to be tested prepared by the above-mentioned process to analyze the doping concentration of the microscopic sample, and to measure the region of interest in the microscopic sample according to this method. interest, ROI) resistance value.

Returning to the flow of FIG. 3, in step S304, the processor 26 uses the atom probe analysis device 16 to analyze the doping concentration of the microscopic sample to obtain the doping concentration distribution. Among them, the processor 26 will, for example, refer to the relative position of the area to be measured on the device to be measured, and adjust the atom probe analysis device 16 to analyze the doping concentration of the measurement area.

For example, FIG. 7 is a microscopic image of the semiconductor device according to an embodiment of the disclosure. Please refer to FIG. 7, the image 70 shows a semiconductor device, including source/drain regions (black regions) on both sides and a gate region (black regions) in the middle. Among them, the area where the resistance value needs to be measured includes the resistance R _{c of the source/drain electrode itself, the resistance R ch} of the gate electrode in the epitaxial layer 72, the resistance R _{ext of the} gate extension area, and the source/drain electrode and the gate electrode. The resistance between R _sd .

In order to measure the resistance value of a specific area, in some embodiments, when preparing a microscopic sample of the device to be tested, operations such as trenching, cutting, and etching can be performed on the device to be tested in the area to obtain a strip or sheet. The sample sheet is welded to the sample support to prepare a microscopic sample and used to measure the resistance value of the area. In some embodiments, according to the pattern of the region, a region conforming to the pattern can be found from the doping concentration distribution analyzed by the atom probe analysis device, so as to perform the subsequent resistance value measurement.

In step S306, the processor 26 uses a linear fitting method to generate a tangent line across the region of interest in the doping concentration distribution, and analyzes the change curve of the doping concentration on the tangent line to measure the resistance value of the region of interest. The linear fitting method is, for example, least square linear fitting (least square linear fitting). In the embodiment of the present disclosure, by performing the linear fitting method on the doping concentration distribution, it is possible to find the best linear equation that can fit the doping concentration distribution by minimizing the sum of squares of the error.

For example, FIG. 8 is a doping concentration distribution diagram drawn according to an embodiment of the present disclosure. Please refer to FIG. 8, the doping concentration distribution map 80 of this embodiment is drawn in the form of contour lines, which, for example, is based on the highest concentration in the doping concentration distribution, and every certain ratio or percentage (for example, 5%-20 %) Draw a curve to show the change in doping concentration and its distribution with the area of interest. Among them, the tangent line 82 is a straight line calculated by the linear fitting method, and its path passes through each concentration area on the doping concentration distribution map 80 and can be regarded as the best tangent line fitting the doping concentration distribution map 80.

In some embodiments, for the above-mentioned tangent line generated by the linear fitting method, the processor 26 may further determine whether the tangent line crosses the area to be measured by calculating the relationship between the length of the tangent line and the doping concentration distribution (ie , Area of interest) to obtain accurate measurement results. In detail, for multiple tangents across different regions of the doping concentration distribution, the processor 26, for example, calculates the ratio of the length of each tangent in the doping concentration distribution to the length of the doping concentration distribution, and compares the ratio with the preset valve Value comparison, so that when the calculated ratio is less than or equal to the preset threshold, the tangent is filtered out, and only the tangent that meets the requirements is retained for subsequent resistance value measurement. The preset threshold is, for example, any value between 0.6 and 0.9, which is not limited here.

For example, FIG. 9A and FIG. 9B show the method for correcting the fitting tangent of the doping concentration distribution according to the embodiment of the disclosure. Please refer to FIGS. 9A and 9B. In this embodiment, the doping concentration profile 80 of FIG. 8 is taken as an example, and the tangent lines 84 and 82 that can cross the doping concentration profile 80 are respectively obtained. In this embodiment, the length X of the tangent lines 84 and 82 in the doping concentration profile 80 is further calculated, and the ratio of this length to the length Y of the doping concentration profile 80 is calculated to determine whether the calculated ratio is greater than 0.7. Wherein, in FIG. 9A, the length X of the tangent line 84 is, for example, 35 nm, and the length Y of the doping concentration profile 80 is 80 nm, and the ratio 0.43 is less than 0.7. Therefore, it can be determined that the tangent line 84 is not a good fit. Line, but it can be filtered out. On the other hand, in FIG. 9B, the length X of the tangent line 82 is, for example, 60 nanometers, and the length Y of the doping concentration profile 80 is 80 nanometers, and the ratio of 0.75 is greater than 0.7. Therefore, it can be determined that the tangent line 82 is better The fitting line can be used for subsequent resistance measurement. With the above method, the poorly fitting tangent can be quickly filtered out, and the tangent that has a better chance of fitting with the doping concentration distribution can be found, and the accuracy of the measured resistance value can be improved.

In some embodiments, the processor 26 uses a learning model to identify features in the curve of the doping concentration to obtain the corresponding resistance value. Among them, the learning model is, for example, established using a machine learning algorithm, and by inputting the doping concentration variation curves of different test samples and their corresponding resistance values, the learning model can learn these doping concentration variation curves and The relationship between the corresponding resistance values is applied to actual measurement. In this way, the electrical properties of the semiconductor device can be quickly measured.

In summary, the embodiment of the present disclosure analyzes the doping concentration of the semiconductor device, and interprets the analysis result with a pre-trained learning model to measure the resistance value of the region of interest, and is not limited to the desired measurement. The area specification or structure can thus realize the rapid measurement of the electrical properties of the semiconductor device, and automatically generate data feedback to the generation to adjust or calibrate the process.

According to some embodiments, a method for measuring the resistance of a semiconductor element is provided, which is suitable for an electronic device with a processor. The method includes the following steps: transfer the component to be tested to the sample support and use a cutting device to cut the component to be tested into a tip-shaped microscopic sample; use an atom probe analysis device to analyze the doping concentration of the microscopic sample to obtain the doping concentration Distribution; and using a linear fitting method to generate a tangent line across the region of interest in the doping concentration distribution, and analyze the change curve of the doping concentration on the tangent line to measure the resistance value of the region of interest.

According to some embodiments, a device for measuring the resistance of a semiconductor element is provided, which includes a transfer device, a cutting device, an atom probe analysis device, and a processor. The transfer device is used to transfer the component to be tested to the sample support. The cutting device is used for cutting the component to be tested. The processor is coupled to the transfer device, the cutting device and the atom probe analysis device, and is configured to: control the transfer device to transfer the component under test to the sample support, and control the cutting device to cut the component under test into a needle-shaped microscopic sample ; Control the atom probe analysis device to analyze the doping concentration of the microscopic sample to obtain the doping concentration distribution; and use the linear fitting method to generate a tangent across the region of interest in the doping concentration distribution, and analyze the doping concentration on the tangent Change the curve to measure the resistance value of the area of interest.

According to some embodiments, a device for measuring the resistance of a semiconductor element is provided, which includes a connection device, a storage device, and a processor. The connecting device is used for connecting the transfer device, the cutting device and the atom probe analysis device. The storage device is used for storing computer programs. The processor is coupled to the connection device and the storage device, and is configured to load and execute a computer program to: control the transfer device to transfer the component under test to the sample support, and control the cutting device to cut the component under test into a needle-shaped microscopic sample ; Control the atom probe analysis device to analyze the doping concentration of the microscopic sample to obtain the doping concentration distribution; and use the linear fitting method to generate a tangent across the region of interest in the doping concentration distribution, and analyze the doping concentration on the tangent Change the curve to measure the resistance value of the area of interest.

The features of several embodiments are summarized above, so that those skilled in the art can better understand the various aspects of the present invention. Those skilled in the art should understand that they can easily use the present invention as a basis for designing or modifying other processes and structures to perform the same purpose as the embodiment described herein and/or achieve the same purpose as the embodiment described herein. Example of the same advantages. Those skilled in the art should also realize that these equivalent structures do not depart from the spirit and scope of the present invention, and they can make various changes, substitutions and alterations to it without departing from the spirit and scope of the present invention.

10: Measuring system 12: Transfer device 14: Cutting device 16: Atom probe analysis device 20: Measuring device 22: Connecting device 24: Storage device 26: Processor 50, 50a, 50b, 50c: Device under test 52 : Protective layer 54: void 56: protective material 58: dashed line 62, 64: area 70: image 72, EPI: epitaxial layer 80: doping concentration profile 82, 84: tangent MG: metal gate MD: metal drain R _c , R _ch , R _ext , R _sd : resistance S302~S306, S402~S406: steps

FIG. 1 is a block diagram of a system for measuring the resistance of a semiconductor device according to an embodiment of the disclosure. FIG. 2 is a block diagram of a device for measuring the resistance of a semiconductor device according to an embodiment of the present invention. FIG. 3 is a flowchart of a method for measuring the resistance of a semiconductor device according to an embodiment of the disclosure. FIG. 4 is a flowchart of a method for preparing a sample of a semiconductor device according to an embodiment of the disclosure. 5A to 5E are examples of the preparation method of the semiconductor device sample according to the embodiment of the disclosure. 6A to 6D are microscopic images of the semiconductor device according to an embodiment of the disclosure. FIG. 7 is a microscopic image of the semiconductor device according to an embodiment of the disclosure. FIG. 8 is a diagram showing a doping concentration distribution diagram according to an embodiment of the present disclosure. 9A and 9B are a method for correcting the fitting tangent of the doping concentration distribution according to an embodiment of the disclosure.

S302~S306: steps

Claims (10)

A method for measuring the resistance of a semiconductor element is suitable for an electronic device with a processor. The method includes the following steps: Transfer the component to be tested to the sample support and use a cutting device to cut the component to be tested into a needle-shaped microscopic sample; Analyzing the dopant concentration of the microscopic sample using an atom probe analysis device to obtain a dopant concentration distribution; and A linear fitting method is used to generate a tangent line across the region of interest in the doping concentration distribution, and the variation curve of the doping concentration on the tangent line is analyzed to measure the resistance value of the region of interest. The method according to claim 1, wherein before transferring the component under test to the sample support, it further comprises: Delayer (delayer) the protective layer on the device under test to expose the metal layer; Removing the electrode contacts on the metal layer; and The gap left after the electrode contact is removed is capped with a protective material. The method according to claim 2, wherein the step of removing the protective layer on the device under test to expose the metal layer includes: Grinding the protective layer on the component under test, and analyzing the element composition of the protective layer after the grinding; and When the analyzed element composition includes a specific element, the grinding is stopped. The method according to claim 1, wherein the step of analyzing the change curve of the doping concentration on the tangent line to measure the resistance value of the region of interest includes: Use the trained learning model to identify the change curve to output the resistance value corresponding to the change curve, where The learning model is established by using a machine learning algorithm, and learns the relationship between the change curve of the doping concentration and the corresponding resistance value of a plurality of different components to be tested. The method according to claim 1, wherein the step of using a linear fitting method to generate a tangent line across the region of interest in the doping concentration distribution further comprises: For a plurality of tangents across different regions of the doping concentration distribution, the ratio of the length of each tangent in the doping concentration distribution to the length of the doping concentration distribution is calculated and compared with a preset threshold Compare; and Filter out the tangent whose ratio is less than or equal to the preset threshold. A measuring system for the resistance of a semiconductor element, including: Transfer device, transfer the component to be tested to the sample support; A cutting device, which cuts the component to be tested; Atom probe analysis device; and A measurement device with a processor, coupled to the transfer device, the cutting device, and the atom probe analysis device, and is configured to: Controlling the transfer device to transfer the component under test to the sample support, and control the cutting device to cut the component under test into a needle-shaped microscopic sample; Controlling the atom probe analysis device to analyze the doping concentration of the microscopic sample to obtain a doping concentration distribution; and A linear fitting method is used to generate a tangent line across the region of interest in the doping concentration distribution, and the variation curve of the doping concentration on the tangent line is analyzed to measure the resistance value of the region of interest. The measurement system as described in claim 6, further including: A wafer de-layering device, which removes the protective layer on the device under test to expose the metal layer; An etching device to remove the electrode contacts on the metal layer; and The filling device is used to fill the gap left after the electrode contact is removed with a protective material. The measurement system described in claim 7 further includes: The analysis device analyzes the element composition of the protective layer after polishing when the wafer delayer device is polishing the protective layer on the component to be tested, wherein When the element composition analyzed by the analysis device includes a specific element, the measurement device controls the wafer delayer device to stop the grinding. The measurement system according to claim 6, wherein the measurement device uses a trained learning model to identify the change curve to output the resistance value corresponding to the change curve, wherein the learning model is the The measurement device is established by a machine learning algorithm, and learns the relationship between the change curve of the doping concentration and the corresponding resistance value of the different multiple components to be tested. A measuring device for the resistance value of a semiconductor element, comprising: Connecting device, connecting transfer device, cutting device and atom probe analysis device; Storage device to store computer programs; and The processor, coupled to the connecting device and the storage device, is configured to load and execute the computer program to: Controlling the transfer device to transfer the component under test to the sample support, and control the cutting device to cut the component under test into a needle-shaped microscopic sample; Controlling the atom probe analysis device to analyze the doping concentration of the microscopic sample to obtain a doping concentration distribution; and A linear fitting method is used to generate a tangent line across the region of interest in the doping concentration distribution, and the variation curve of the doping concentration on the tangent line is analyzed to measure the resistance value of the region of interest.

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