TWI737474B - Solid-state optical phased scanning component - Google Patents
Solid-state optical phased scanning component Download PDFInfo
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- TWI737474B TWI737474B TW109129754A TW109129754A TWI737474B TW I737474 B TWI737474 B TW I737474B TW 109129754 A TW109129754 A TW 109129754A TW 109129754 A TW109129754 A TW 109129754A TW I737474 B TWI737474 B TW I737474B
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Abstract
Description
本發明是有關於一種固態光學相位掃描構件,用於光達、全像術掃描及結構光掃描。The invention relates to a solid-state optical phase scanning component, which is used for lidar, holographic scanning and structured light scanning.
光達係一光偵測及測距感測器,其用光束來掃描待偵測目標並反射至光達模組所花的時間來量測待偵測目標的距離,其具有高可靠度、長使用壽命、尺寸小、重量輕、成本低等優點。Lidar is a light detection and ranging sensor, which uses a beam of light to scan the target to be detected and reflect the time it takes to measure the distance of the target to be detected. It has high reliability, Long service life, small size, light weight, low cost and other advantages.
習知光達一般是設計為包括複數個點光源矩陣,再透過機械移動掃描構件來調整各別點光源之光束角度,因此機械移動掃描構件結構複雜、製程不易、成本高,且各別機械移動掃描構件之作動可能因製造或/及控制等誤差,存在精確度不足之疑慮。The conventional LiDAR is generally designed to include a plurality of point light source matrices, and then adjust the beam angle of each point light source by mechanically moving the scanning member. Therefore, the mechanically movable scanning member has a complicated structure, difficult manufacturing process, high cost, and separate mechanically moved scanning members. The operation may be due to manufacturing or/and control errors, and there is a doubt about insufficient accuracy.
因此,有必要提供一種新穎且具有進步性之固態光學相位掃描構件,以解決上述之問題。Therefore, it is necessary to provide a novel and progressive solid-state optical phase scanning component to solve the above-mentioned problems.
本發明之主要目的在於提供一種固態光學相位掃描構件,可控制光束相位進而調製光束方向以進行掃描。The main purpose of the present invention is to provide a solid-state optical phase scanning component, which can control the phase of the beam and then modulate the direction of the beam for scanning.
為達成上述目的,本發明提供一種固態光學相位掃描構件,包括:複數光學單元,各該光學單元包括一高介電層、及位於該高介電層二側之一第一電極及一第二電極,各該高介電層可在該第一及第二電極施加不同供電條件時具有不同之折射率;及一透鏡單元,位於面對該複數光學單元之一出光側,包括一入光面及一出光面,被配置成可將自該入光面入射之光束導射至該複數光學單元而改變該光束之路徑後由該出光面射出。To achieve the above object, the present invention provides a solid-state optical phase scanning component, including: a plurality of optical units, each of the optical units includes a high dielectric layer, and a first electrode and a second electrode located on both sides of the high dielectric layer Electrodes, each of the high dielectric layers can have different refractive indexes when the first and second electrodes are applied with different power supply conditions; and a lens unit is located on the light-exit side facing the plurality of optical units and includes a light-incident surface And a light-emitting surface configured to guide the light beam incident from the light-incident surface to the plurality of optical units to change the path of the light beam and then be emitted from the light-emitting surface.
以下僅以實施例說明本發明可能之實施態樣,然並非用以限制本發明所欲保護之範疇,合先敘明。The following examples are only used to illustrate the possible implementation aspects of the present invention, but they are not intended to limit the scope of protection of the present invention, and are described first.
請參考圖1至4,其顯示本發明之一較佳實施例,本發明之固態光學相位掃描構件1包括複數光學單元10及一透鏡單元20。Please refer to FIGS. 1 to 4, which show a preferred embodiment of the present invention. The solid-state optical
各該光學單元10包括一高介電層11、及位於該高介電層11二側之一第一電極12及一第二電極13,各該高介電層11可在該第一及第二電極12, 13施加不同供電條件時具有不同之折射率,該供電條件可為電壓、或其他能影響該高介電層11之折射率的供電條件,各該光學單元10可為反射式或穿透式;該透鏡單元20位於面對該複數光學單元10之一出光側14,該透鏡單元20包括一入光面21及一出光面22,該透鏡單元20被配置成可將自該入光面21入射之光束100導射至該複數光學單元10而改變該光束100之路徑後由該出光面22射出,該光束100可為紅外線光束或具有其他波長之光束。其中,該複數光學單元10之高介電層11可建構成可被單獨、分群、或全部一起控制其折射率之變化。藉此,可將單一光源透過不同供電條件簡單地改變該高介電層11之折射率,使光束之間產生相位差,以實現控制光束相位進而調製光束方向,以進行掃描。此外,該複數光學單元10之間的間距可造成各光束之間的光程差,因此再加上改變該高介電層11之折射率所造成之相位差,可達雙重的調校效果。Each of the optical units 10 includes a high
該複數光學單元10較佳呈矩陣排列,亦可依據需求成不同排列、組合。該高介電層11為碳化鈦層、氮化矽層、氮化鋁層、鈦酸鋇層、二氧化矽層或壓電陶瓷層,各該高介電層11可為單一層一體成型之高介電薄膜之一部分。該高介電層11之製程上,可使用單晶矽材料,其結構體積小、熱光係數大、調節相位較為容易;而使用氮化矽材料,其損耗小、加工誤差容忍度較大,有利相位的精確控制。該第一電極12位於該透鏡單元20與該高介電層11之間且為接地,該第一電極12為可透光之銀(Ag)、銅(Cu)、金(Au)或透明導電薄膜,該第一電極12之厚度較佳不大於100奈米而允許透光。各該第一電極12為單一層一體成型之金屬薄膜之一部分。各該光學單元10之第二電極13相互獨立地位於該高介電層11之遠離該透鏡單元20之一側,該第二電極13為不透光且包括設於一基層(較佳為不允許透光)上之銀(Ag)、銅(Cu)金(Au)或導電薄膜(其厚度較佳為不小於10奈米),該第二電極13之總厚度較佳不大於100奈米而不允許透光。選擇性地,該透鏡單元可直接結合於該高介電層11之一側或直接結合於該第一電極12之一側而成一體結構,無需另外配置獨立之透鏡單元。The plurality of optical units 10 are preferably arranged in a matrix, and can also be arranged and combined according to requirements. The high
在其他實施例中,該第二電極13可配置成面向該透鏡單元20,該第一電極12配置成位於該高介電層11之遠離該透鏡單元20之一側;該透鏡單元可直接結合於該高介電層之一側而成一體結構。In other embodiments, the
在本實施利中,各該光學單元10另包括一背層30,該背層30位於該高介電層11之遠離該透鏡單元20之一側。該背層30為藍寶石層,具有良好散熱、支撐及保護作用。各該背層30為單一層一體成型之藍寶石薄膜之一部分,該第二電極13位於與該高介電層11與該背層30之間。In this embodiment, each of the optical units 10 further includes a
該透鏡單元20包括矽(Si)稜鏡或二氧化矽(SiO
2)透鏡,該透鏡亦可為球面或非球面鏡,依據不同需求,該透鏡單元20可包括單一或多數透鏡。在本實施利中,該透鏡單元20包括一個三稜鏡,該金屬薄膜設於該三稜鏡之其中一面,該入光面21及該出光面22分別設於該三稜鏡之其他二面。
The
機制上,當光束100入射時,可透過一控制單元40調控輸入不同的供電條件至該複數光學單元10之第一及第二電極12, 13,以使該複數光學單元10之高介電層11具有不同折射率,自該入光面21進入該透鏡單元20之光束100穿過該第一電極12後,射入該高介電層11並經該第二電極13反射並於該高介電層11折射後穿過該第一電極12而由該出光面22射出。具不同折射率之高介電層11使得自部分或全部光學單元10射出之光束100轉向且產生相位差,透過調控光束100之間的相位關係,可對指定方向產生相長干涉從而實現高強度具指向性光束(其它方向產生相消干涉而無光束輸出),因此可以將一束或多束高強度光束的照射方向使用供電條件控制實現空間中一維/二維/三維之掃描。該光束100較佳係於一光纖50內傳輸,且經過一準直器60後,射入該固態光學相位掃描構件1並投射至待掃描物,掃描後之反射光束例如可使用紅外光相機或其他光接收器接收,再經後端處理裝置取得掃描結果。In mechanism, when the
1:固態光學相位掃描構件1: Solid-state optical phase scanning component
10:光學單元10: Optical unit
11:高介電層11: High dielectric layer
12:第一電極12: The first electrode
13:第二電極13: second electrode
14: 出光側14: Light emitting side
20:透鏡單元20: lens unit
21:入光面21: Glossy surface
22:出光面22: Glossy surface
30:背層30: back layer
40:控制單元40: control unit
50:光纖50: Optical fiber
60:準直器60: collimator
100:光束100: beam
圖1為本發明一較佳實施例之固態光學相位掃描構件示意圖。 圖2為本發明一較佳實施例之固態光學相位掃描構件立體圖。 圖3為本發明一較佳實施例之固態光學相位掃描構件分解圖。 圖4為本發明一較佳實施例之作用示意圖。 FIG. 1 is a schematic diagram of a solid-state optical phase scanning component according to a preferred embodiment of the present invention. Fig. 2 is a perspective view of a solid-state optical phase scanning component according to a preferred embodiment of the present invention. Fig. 3 is an exploded view of a solid-state optical phase scanning component according to a preferred embodiment of the present invention. Fig. 4 is a schematic diagram of the function of a preferred embodiment of the present invention.
1:固態光學相位掃描構件 1: Solid-state optical phase scanning component
11:高介電層 11: High dielectric layer
12:第一電極 12: The first electrode
30:背層 30: back layer
100:光束 100: beam
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Citations (5)
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CN1276521A (en) * | 2000-06-29 | 2000-12-13 | 上海交通大学 | Attenuater of laser intensity |
TW200717389A (en) * | 2005-10-21 | 2007-05-01 | Hewlett Packard Development Co | Luminance adjustment |
TW201100879A (en) * | 2009-06-22 | 2011-01-01 | Hon Hai Prec Ind Co Ltd | Image sensor module and image obtainning module |
EP3418780A2 (en) * | 2017-06-20 | 2018-12-26 | Samsung Electronics Co., Ltd. | Beam-steering device and optical apparatus including the same |
WO2019202761A1 (en) * | 2018-04-20 | 2019-10-24 | 株式会社村田製作所 | Spectrometer, imaging device, scanning device, and position measuring device |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1276521A (en) * | 2000-06-29 | 2000-12-13 | 上海交通大学 | Attenuater of laser intensity |
TW200717389A (en) * | 2005-10-21 | 2007-05-01 | Hewlett Packard Development Co | Luminance adjustment |
TW201100879A (en) * | 2009-06-22 | 2011-01-01 | Hon Hai Prec Ind Co Ltd | Image sensor module and image obtainning module |
EP3418780A2 (en) * | 2017-06-20 | 2018-12-26 | Samsung Electronics Co., Ltd. | Beam-steering device and optical apparatus including the same |
WO2019202761A1 (en) * | 2018-04-20 | 2019-10-24 | 株式会社村田製作所 | Spectrometer, imaging device, scanning device, and position measuring device |
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