TWI735862B - Ultrasonic inspection device and ultrasonic inspection method - Google Patents
Ultrasonic inspection device and ultrasonic inspection method Download PDFInfo
- Publication number
- TWI735862B TWI735862B TW108112441A TW108112441A TWI735862B TW I735862 B TWI735862 B TW I735862B TW 108112441 A TW108112441 A TW 108112441A TW 108112441 A TW108112441 A TW 108112441A TW I735862 B TWI735862 B TW I735862B
- Authority
- TW
- Taiwan
- Prior art keywords
- mentioned
- polarity
- inspected body
- peak
- local
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/06—Visualisation of the interior, e.g. acoustic microscopy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/023—Solids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/023—Solids
- G01N2291/0231—Composite or layered materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/044—Internal reflections (echoes), e.g. on walls or defects
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
本發明對自被檢查體之各測定點獲得之反射波擷取自被檢查體中之特定界面發生之局部峰,將擷取出之局部峰之極性與參考極性進行比較,並將擷取出之局部峰之極性與參考極性不同之測定點檢測為異常。The present invention extracts the reflected wave obtained from each measurement point of the inspected body from the local peaks generated from the specific interface in the inspected body, compares the polarities of the extracted local peaks with the reference polarity, and compares the extracted local peaks The measurement point whose polarity is different from the reference polarity is detected as abnormal.
Description
本發明係關於一種超音波檢查裝置及超音波檢查方法。The invention relates to an ultrasonic inspection device and an ultrasonic inspection method.
作為自被檢查體之圖像檢查缺陷之非破壞檢查方法,有使用對被檢查體照射超音波並檢測其反射波而產生之超音波圖像之方法。As a non-destructive inspection method for inspecting defects in the image of the inspected body, there is a method of irradiating the inspected body with ultrasonic waves and detecting the reflected waves to produce the ultrasonic image.
一般而言,為了以超音波檢測具有多層構造之被檢查體內存在之缺陷,利用聲阻抗不同之反射特性。超音波於液體或固體物質中傳播,並於聲阻抗不同之物質之邊界面或空隙處,產生反射波(回音)。Generally speaking, in order to detect defects existing in the inspected body with a multi-layer structure with ultrasonic waves, the reflection characteristics of different acoustic impedances are used. Ultrasonic waves propagate in liquid or solid materials, and produce reflected waves (echoes) at the boundary surfaces or gaps of materials with different acoustic impedances.
此處,來自剝離等缺陷之反射波與來自無缺陷之處之反射波相比,其強度較高。因此,藉由將被檢查體各層之邊界面中之反射強度圖像化,可獲得使存在於被檢查體內之剝離缺陷顯著化之圖像。Here, the reflected wave from defects such as peeling has a higher intensity than the reflected wave from a place where there is no defect. Therefore, by imaging the reflection intensity in the boundary surface of each layer of the inspected body, an image can be obtained that makes the peeling defect existing in the inspected body more conspicuous.
然而,近年來,以電子零件為代表之被檢查體之配線圖案逐漸微細化,待檢測之剝離亦變得微小,而難以僅根據反射強度來特定有無剝離。However, in recent years, the wiring patterns of the inspected objects represented by electronic components have gradually become finer, and the peeling to be detected has also become minute, and it is difficult to specify the presence or absence of peeling only based on the reflection intensity.
於超音波自聲阻抗較小之物質入射至較大之物質之情形時,來自剝離缺陷之反射波具有相對於來自無剝離之部位之反射波相位反轉之性質。可藉由進行捕捉該相位反轉檢測反射強度較低之剝離缺陷之處理而實現微小之剝離或空隙之高感度檢測。When ultrasonic waves are incident from a substance with a smaller acoustic impedance to a larger substance, the reflected wave from the peeling defect has the property of reversing the phase of the reflected wave from the part without peeling. High-sensitivity detection of tiny peeling or voids can be achieved by capturing the peeling defect with low reflection intensity of the phase reversal detection.
作為此種檢測剝離等之方法,有例如專利文獻1。於專利文獻1中,比較反射波之上升峰之極性與發送波之上升峰之極性,若極性不同則判定為剝離。
[先前技術文獻]
[專利文獻]As a method of detecting peeling etc., there is
[專利文獻1]日本專利特開2012-154877號公報[Patent Document 1] Japanese Patent Laid-Open No. 2012-154877
[發明所欲解決之問題][The problem to be solved by the invention]
專利文獻1之方法係由於對自各測定點獲得之每個反射波,將來自期望之界面之反射波之上升峰極性與發送波之上升峰極性進行比較,故無須將測定點間之峰建立對應。The method of
然而,若因被檢查體內之構造物之薄型化引起來自各界面之反射波(峰)之發生時間接近,則難以特定來自期望之界面之反射波。其結果,難以高感度地檢測微小之剝離等。However, if the occurrence time of the reflected wave (peak) from each interface is close due to the thinning of the structure in the subject, it is difficult to specify the reflected wave from the desired interface. As a result, it is difficult to detect minute peeling or the like with high sensitivity.
本發明之目的在於:被檢查體內之構造物薄型化之情形時,亦高感度地檢測微小之剝離等。 [解決問題之技術手段]The purpose of the present invention is to detect minute peeling and the like with high sensitivity even when the structure in the body to be inspected is thinner. [Technical means to solve the problem]
本發明之一態樣之超音波檢查裝置特徵在於具有處理部,其以超音波探頭掃描被檢查體之表面並自上述超音波探頭向被檢查體出射超音波,且接收自上述被檢查體返回之反射波並基於接收到之上述反射波之特徵檢查上述被檢查體之內部狀態;上述處理部對自上述被檢查體之各測定點獲得之上述反射波,擷取自上述被檢查體中之特定界面發生之局部峰,將擷取出之上述局部峰之極性與參考極性進行比較,並將擷取出之上述局部峰之極性與上述參考極性之不同之測定點檢測為異常。An ultrasonic inspection apparatus of one aspect of the present invention is characterized by having a processing unit that scans the surface of the inspected body with an ultrasonic probe and emits ultrasonic waves from the ultrasonic probe to the inspected body, and receives the return from the inspected body Reflected waves and inspect the internal state of the inspected body based on the characteristics of the received reflected waves; The processing unit extracts the reflected waves obtained from each measurement point of the inspected body from the inspected body Compare the polarity of the extracted local peak with the reference polarity for the local peaks that occur at the specific interface, and detect the measurement points where the polarity of the extracted local peaks are different from the reference polarity as abnormal.
本發明之一態樣之超音波檢查裝置特徵在於其係以超音波探頭掃描被檢查體之表面並自上述超音波探頭向被檢查體出射超音波,且接收自上述被檢查體返回之反射波並基於接收到之上述反射波之特徵檢查上述被檢查體之內部狀態者,且具有以下機構:於1個測定點之上述反射波內設定自上述被檢查體之期望之界面發生之局部峰;設定向上述被檢查體出射之上述超音波之一波長以下之時間長之門;設定自上述被檢查體之期望之異種界面發生之上述局部峰之極性;使用設定之上述時間長之上述門自其它之上述反射波之各者依序探索並特定與設定之上述局部峰相同之自上述異種界面發生之上述局部峰;基於特定出之上述局部峰之反射強度,產生上述異種界面之剖面圖像並顯示;及若自探索並特定出之各測定點獲得之上述反射波之上述局部峰之極性與設定之上述局部峰之極性不同,則判定為異常,並將判定為異常之測定部位顯示於上述產生之上述剖面圖像上並輸出。One aspect of the ultrasonic inspection device of the present invention is characterized in that it scans the surface of the inspected body with an ultrasonic probe, emits ultrasonic waves from the ultrasonic probe to the inspected body, and receives the reflected waves returned from the inspected body And check the internal state of the object under inspection based on the characteristics of the received reflected wave, and have the following mechanism: set a local peak generated from the desired interface of the object under inspection within the reflected wave at one measurement point; Set the gate for the length of time below one of the wavelengths of the ultrasonic wave emitted to the subject; set the polarity of the local peaks that occur from the desired heterogeneous interface of the subject; use the gate with the set length of the above time from other Each of the above-mentioned reflected waves sequentially explores and specifies the above-mentioned local peaks that are the same as the set above-mentioned local peaks, which are generated from the above-mentioned heterogeneous interface; based on the reflection intensity of the above-mentioned specified above-mentioned partial peaks, a cross-sectional image of the above-mentioned heterogeneous interface is generated and displayed ; And if the polarity of the local peak of the reflected wave obtained from each measurement point that is explored and identified is different from the polarity of the set local peak, it is judged to be abnormal, and the measurement site judged to be abnormal is displayed in the above generated The profile image is displayed and output.
本發明之一態樣之超音波檢查方法特徵在於:其係以超音波探頭掃描被檢查體之表面,並自上述超音波探頭向被檢查體出射超音波,且接收自上述被檢查體返回之反射波並基於接收到之上述反射波之特徵檢查上述被檢查體之內部狀態者,且對自上述被檢查體之各測定點獲得之上述反射波,擷取自上述被檢查體中之特定界面發生之局部峰,將擷取出之上述局部峰之極性與參考極性進行比較,並將擷取出之上述局部峰之極性與上述參考極性不同之測定點檢測為異常。 [發明之效果]The ultrasonic inspection method of one aspect of the present invention is characterized in that it scans the surface of the inspected body with an ultrasonic probe, and emits ultrasonic waves from the ultrasonic probe to the inspected body, and receives the return from the inspected body The reflected wave is used to inspect the internal state of the inspected body based on the characteristics of the received reflected wave, and the reflected wave obtained from each measurement point of the inspected body is extracted from a specific interface in the inspected body For the local peak that occurs, compare the polarity of the extracted local peak with the reference polarity, and detect the measurement point where the polarity of the extracted local peak is different from the reference polarity as an abnormality. [Effects of Invention]
根據本發明之一態樣,即使於被檢查體內之構造物薄型化之情形時,亦可高感度地檢測微小之剝離等。According to one aspect of the present invention, even when the structure in the subject is thinned, it is possible to detect minute peeling or the like with high sensitivity.
實施形態關於一種使用超音波進行有無存在於電子零件等被檢查體內部之剝離、空隙等缺陷之判定及內部狀態之可視化的超音波檢查裝置及超音波檢查方法。The embodiment relates to an ultrasonic inspection device and an ultrasonic inspection method that uses ultrasonic waves to determine the presence or absence of defects such as peeling, voids, etc., and visualize the internal state of an electronic component or other object to be inspected.
於以複雜且包含多層構造之2.5維、3維安裝零件等為對象之超音波檢查中,因表面之凹凸(例如,鑄模樹脂之厚度不均等)或內部構造物之傾斜及變形(例如,晶片之翹曲等)、或安裝零件之高度不同等,有異種界面間之距離因測定點變動之情況。In the ultrasonic inspection for 2.5-dimensional and 3-dimensional mounting parts with complex and multi-layered structures, the unevenness of the surface (e.g., the uneven thickness of the mold resin) or the inclination and deformation of the internal structure (e.g., chip The warpage, etc.), or the height of the installed parts is different, etc., and the distance between the dissimilar interfaces may vary due to the measurement point.
於此種情形時,於實施形態,例如對自具有複雜且多層構造之被檢查體獲得之各測定點之反射波,擷取局部峰並算出特徵量,且基於該特徵量於全反射波間進行考慮到極性反轉之局部峰之建立對應。又,藉由將全反射波間建立對應之特定之邊界面之局部峰與參考峰信號進行比較而檢測相位反轉之峰。In this case, in the implementation form, for example, for the reflected wave of each measurement point obtained from the inspected body with a complicated and multi-layer structure, the local peak is extracted and the characteristic quantity is calculated, and the total reflection wave is performed based on the characteristic quantity. Consider the establishment of correspondence between the local peaks of the polarity reversal. In addition, the phase inversion peak is detected by comparing the local peak of the specific boundary surface corresponding to the total reflection wave with the reference peak signal.
於實施形態,於超音波之非破壞檢查中,利用簡單之條件設定,辨識來自包含複雜且多層構造之被檢查體之異種邊界面之反射波,產生清晰之剖面圖像,且可特定發生了極性反轉之測定部位。例如,將IC(Integrated Circuit:積體電路)晶片等以矽鑄模之多層構造設為檢查對象,即使存在矽之厚度不均或構造物變形,亦僅以簡單之條件設定產生使用者期望之異種構造物之接合界面之圖像。In the implementation form, in the ultrasonic non-destructive inspection, the simple condition setting is used to identify the reflected wave from the heterogeneous boundary surface of the inspected body with complex and multi-layer structure, and produce a clear cross-sectional image, which can be specified. The part where the polarity is reversed. For example, IC (Integrated Circuit) chips, etc., have a multilayer structure of silicon mold as the inspection object. Even if there is an uneven thickness of silicon or deformation of the structure, only simple condition settings are used to generate the different species desired by the user. The image of the joint interface of the structure.
如此,於實施形態,於以半導體電子零件為對象之超音波檢查中,辨識自異種接合面反射並接收到之局部峰信號,並捕捉與參考信號之相位反轉。藉此,即使於被檢查體內之構造物薄型化之情形時,亦可高感度地檢測微小之剝離等。In this way, in the embodiment, in the ultrasonic inspection for semiconductor electronic parts, the local peak signal reflected and received from the dissimilar joint surface is recognized, and the phase inversion with the reference signal is captured. With this, even when the structure in the body to be inspected is thinner, it is possible to detect minute peeling and the like with high sensitivity.
以下,使用圖式對實施例進行說明。 [實施例]Hereinafter, the embodiment will be described using drawings. [Example]
作為超音波之特性,於被檢查體內部傳播,且當存在材料特性(聲阻抗)改變之邊界時,其一部分被反射。尤其,若存在空隙則大部分被反射,因而可根據超音波之反射強度高感度地檢測異種邊界面中之空隙或剝離等缺陷。以下,以多層構造品之異種接合界面中之剝離為檢測對象進行說明。As a characteristic of ultrasonic waves, it propagates inside the inspected body, and when there is a boundary where the material properties (acoustic impedance) change, part of it is reflected. In particular, if there are voids, most of them are reflected. Therefore, it is possible to detect defects such as voids or peeling in a heterogeneous boundary surface with high sensitivity based on the reflection intensity of ultrasonic waves. Hereinafter, the peeling in the dissimilar bonding interface of the multilayer structure product is used as the detection target for description.
參照圖2,對超音波檢查裝置之構成進行說明。
如圖2所示,超音波檢查裝置具有檢測部1與A/D(Analog/Digital:類比/數位)轉換機6、信號處理部7及全體控制部8。檢測部1具有超音波探針(超音波探頭)2及探傷儀3。探傷儀3藉由對超音波探針2賦予脈衝信號而驅動超音波探針2。由探傷儀3驅動之超音波探針2產生超音波,並以水為媒介發送至被檢查體即試料5。當發送之超音波入射至具有多層構造之試料5時,自試料5之表面或異種邊界面發生反射波4,由超音波探針2接收反射波4,並以探傷儀3實施必要之處理而轉換成反射強度信號。2, the structure of the ultrasonic inspection device will be described.
As shown in FIG. 2, the ultrasonic inspection apparatus has a
接著,該反射強度信號由A/D轉換器6轉換為數位波形資料,並輸入至信號處理部7。於試料5上之檢查區域內逐次掃描進行該超音波之發送及接收。另,為便於說明,將超音波探針2發生之超音波稱為「發送波」,將超音波探針2接收之超音波稱為「反射波」。Then, the reflection intensity signal is converted into digital waveform data by the A/
信號處理部7適當地具有圖像產生部7-1、缺陷檢測部7-2及資料輸出部7-3而構成。對於自A/D轉換器6輸入至信號處理部7之波形資料,於圖像產生部7-1中,進行稍後敘述之信號轉換,並自數位波形資料產生試料5之特定接合面之剖面圖像。缺陷檢測部7-2於由圖像產生部7-1產生之接合面之剖面圖像內,進行稍後敘述之處理,而檢測剝離等缺陷。於資料輸出部7-3中,產生作為由缺陷檢測部7-2檢測出之各個缺陷之資訊或剖面之觀察用圖像等檢查結果輸出之資料並輸出至全體控制部8。The
接著,參照圖3,對實現圖2所示之構成之具體之超音波檢查裝置100之一構成例進行說明。於圖3中,10表示X、Y、Z之正交3軸座標系統。圖3之1相當於圖2中說明之檢測部1。Next, referring to FIG. 3, a configuration example of a specific
檢測部1所含之11係掃描台,12係設置於掃描台11上之水槽,13係於掃描台11上以橫跨水槽12之方式設置之可於X、Y、Z方向移動的掃描器。掃描台11係大致水平設置之基台。於水槽12,將水14注入至虛線所示之高度,並於水槽12之底部(水中)放置試料5。試料5如上所述係包含多層構造等之封裝製品。水14係為使自超音波探針2出射之超音波於試料5之內部有效傳播所需之媒體。16係機械控制器,其沿X、Y、Z方向驅動掃描器13。The
對於試料5,超音波探針2自下端之超音波出射部發送超音波,並接收自試料5返回之反射波。超音波探針2安裝於固持器15,且藉由以機械控制器16驅動之掃描器13可沿X、Y、Z方向自由移動。藉此,超音波探針2可一面沿X、Y方向移動一面於試料5中事前設定之複數個測定點接收反射波,獲得測定區域(XY平面)內之接合面之二維圖像而檢查缺陷。超音波探針2經由電纜22與將反射波轉換為反射強度信號之探傷儀3連接。For the
如圖2所述,超音波檢查裝置100進而具有A/D轉換器6、信號處理部7、全體控制部8、及機械控制器16。As shown in FIG. 2, the
信號處理部7處理經A/D轉換機6之A/D轉換後之反射強度信號並檢測試料5之內部缺陷。信號處理部7具備圖像產生部7-1、缺陷檢測部7-2、資料輸出部7-3及參數設定部7-4。The
圖像產生部7-1根據數位資料產生圖像,該數位資料係將XY平面上預先設定之試料5之測定範圍中自表面及各異種邊界面等返回並由超音波探針2接收之反射波以A/D轉換機6進行A/D轉換而得。缺陷檢測部7-2處理圖像產生部7-1中產生之圖像使內部缺陷顯著化,或進行檢測。資料輸出部7-3輸出由缺陷檢測部7-2使內部缺陷顯著化或檢測出之檢查結果。參數設定部7-4受理自外部輸入之測定條件等參數,並對缺陷檢測部7-2及資料輸出部7-3進行設定。且,於信號處理部7中,例如參數設定部7-4與資料庫18連接。The image generating section 7-1 generates an image based on digital data. The digital data returns the reflection from the surface and various boundary surfaces of the
全體控制部8具備進行各種控制之CPU(Central Processing Unit:中央處理單元)(內置於全體控制部8),且受理來自使用者之參數等。再者,全體控制部8與具有顯示信號處理部7所檢測出之缺陷之圖像、缺陷數、各個缺陷之座標或尺寸等資訊之顯示機構及輸入機構的使用者介面部(GUI(Graphical User Interface:圖形使用者介面)部)17及記憶信號處理部7所檢測出之缺陷之特徵量或圖像等之記憶裝置18適當連接。機械控制器16基於來自全體控制部8之控制指令驅動掃描器13。另,信號處理部7、探傷儀3等亦根據來自全體控制部8之指令而被驅動。The
參照圖4,對試料5之一例進行說明。
此處,400係模式性顯示具有成為主要檢查對象之多層構造之電子零件(被檢查體)之縱構造之例。
被檢查體400係於最下層之印刷配線基板40上經由焊料球41接合有半導體器件42者。半導體器件42積層複數片晶片(此處為43、44、45之3片),且經由凸塊47與插入式基板46連接而形成,並以樹脂48(圖中之陰影部分)自外部保護。當超音波49自被檢查體400之表面側(圖中之上方)入射時,超音波49向被檢查體400之內部傳遞,並於表面及各晶片間之邊界面、凸塊層等聲阻抗不同之某部位反射,且該等作為1個反射波由超音波探針2接收。Referring to Fig. 4, an example of
圖5之50係由超音波探針2接收到之局部反射波之例,且係橫軸為接收時間(路程),縱軸為反射強度(峰值)時之波形。時間係表示被檢查體400之深度者,縱軸之峰值將中央處設為0,自該處往上之方向表示正極性,往下之方向表示負極性。反射波交替顯現極性不同之峰。以下,將各個峰記載為局部峰。50 in FIG. 5 is an example of the partial reflection wave received by the
於一般之門控制方式中,首先,設定用於檢測來自表面之反射波之S門51。接著,將S門設定之時間範圍中初次超越臨界值之峰之發生時序設為來自表面之反射信號,即觸發點。於圖中,53為觸發點。In the general door control method, first, the
接著,對自觸發點53僅延遲預先設定之時間之時間區域施加影像化門(F門)(圖中之52),於F門52內檢測具有預先設定之極性之峰中峰值最大(於極性為負之情形時係峰值最小)之局部峰。於設定正極性之情形時,檢測出局部峰54。為了進行此種處理,F門需設為包含極性為正之局部峰與負之局部峰兩者之至少一者以上之時間長。Next, apply a visualized gate (F gate) (52 in the figure) to the time region delayed from the
信號處理部7之圖像產生部7-1根據測定區域(XY平面)內掃描獲得之各反射波,算出觸發點,並將F門設定為僅延遲固定時間之時間區域,重複設定之極性中峰值最大之局部峰之檢測及將峰值轉換為濃淡值(例如,於產生256灰階之圖像之情形時為0~255),藉此生成距離表面固定深度之剖面之圖像。The image generation section 7-1 of the
如此,先前之門控制方式如圖4之400,於表面至各晶片之邊界面之距離固定之情形時有效。然而,於因鑄模樹脂之厚度之不均或內部之晶片翹曲等引起表面(觸發點)至各晶片邊界面之距離不均一之情形時,無法遍及測定區域全域地產生期望之邊界面之圖像。又,近年來,因電子零件之小型、薄型化之發展,內部構造物亦逐漸薄型化,若將F門設定為如圖5之52之時間長,則來自複數個邊界面之反射信號混存於F門內,導致檢測錯誤之邊界面之信號。In this way, the previous
此處,邊界面中之超音波之反射強度,即峰值係反射前後之材質之聲阻抗差異越大而增大。然而,若於邊界面存在剝離(空隙),則聲阻抗大致為0,故超音波被完全反射,且與無剝離之部位相比變大。又,於超音波自聲阻抗較小之物質入射至較大之物質之情形時,若於此存在剝離(空隙),則通常邊界處之反射波相對於無剝離之部位發生相位反轉。然而,於先前之門控制方式中,無法檢測極性之反轉。Here, the reflection intensity of the ultrasonic wave in the boundary surface, that is, the peak value increases as the difference between the acoustic impedance of the material before and after the reflection increases. However, if there is peeling (void) on the boundary surface, the acoustic impedance is approximately zero, so the ultrasonic wave is completely reflected and becomes larger than the portion without peeling. In addition, when ultrasonic waves are incident from a substance with a small acoustic impedance to a substance with a larger acoustic impedance, if there is separation (a void) here, the reflected wave at the boundary usually reverses the phase with respect to the portion where there is no separation. However, in the previous door control method, the polarity reversal cannot be detected.
相對於此,實施例之超音波檢查裝置於因鑄模樹脂之厚度不均(表面凹凸)或內部構造物之變形引起表面與各邊界面之距離不均一之情形時,亦於自整個測定區域獲得之反射波中特定與來自期望之邊界面之反射信號對應之局部峰。且,藉由檢測其極性之反轉,而不拘於峰值之大小來檢測剝離。In contrast, the ultrasonic inspection device of the embodiment is also obtained from the entire measurement area when the distance between the surface and each boundary surface is not uniform due to the uneven thickness of the mold resin (surface unevenness) or deformation of the internal structure The reflected wave specifies the local peak corresponding to the reflected signal from the desired boundary surface. Moreover, peeling is detected by detecting the reversal of its polarity, regardless of the magnitude of the peak.
參照圖1,對實施例之超音波檢查裝置之處理方法進行說明。本處理由圖2所示之圖像產生部7-1進行。 此處,圖像產生部7-1例如由以下機構構成:於1個測定點之反射波內設定自被檢查體(試料5)之期望界面發生之局部峰;設定向被檢查體(試料5)出射之超音波之一波長以下之時間長之門;設定自被檢查體(試料5)期望之異種界面發生之局部峰之極性;使用設定之時間長之上述門自其它反射波之各者依序探索並特定與設定之局部峰相同之自異種界面發生之局部峰;及基於特定出之局部峰之反射強度產生期望之異種界面之剖面圖像並顯示。1, the processing method of the ultrasonic inspection device of the embodiment will be described. This processing is performed by the image generating unit 7-1 shown in FIG. 2. Here, the image generation unit 7-1 is composed of, for example, the following mechanism: set the local peaks generated from the desired interface of the test object (sample 5) within the reflected wave of one measurement point; ) The gate for the length of time under one wavelength of the emitted ultrasonic wave; set the polarity of the local peak that occurs from the expected heterogeneous interface of the object to be inspected (sample 5); use the gate for the set time for the long time to be based on each of the other reflected waves The sequence explores and specifies the local peaks that are the same as the set local peaks that occur from the heterogeneous interface; and based on the reflection intensity of the specified local peaks, the desired cross-sectional image of the heterogeneous interface is generated and displayed.
若自探索並特定出之各測定點獲得之反射波之局部峰之極性與設定之局部峰之極性不同,則缺陷檢測部7-2判定為異常。資料輸出部7-3構成將判定為異常之測定部位顯示於產生之剖面圖像上並輸出之機構。If the polarities of the local peaks of the reflected waves obtained from the searched and identified measurement points are different from the polarities of the set local peaks, the defect detection unit 7-2 determines that it is abnormal. The data output unit 7-3 constitutes a mechanism for displaying and outputting the measurement location determined to be abnormal on the generated cross-sectional image.
此處,設定上述門之機構設定例如各包含1個極性為正與負之上述局部峰之時間長作為超音波之一波長以下之時間長。Here, the mechanism setting for setting the gate includes, for example, the time length of each of the above-mentioned local peaks each including one positive and negative polarity as the time length of one wavelength or less of the ultrasonic wave.
首先,作為自期望之邊界面檢測剝離之條件,輸入門位置(邊界面之深度)、門寬度(局部峰探索範圍)及參考極性等條件(S101)。條件基本由使用者設定,於圖6顯示其一例之概念圖。60係被檢查體,且顯示因存在鑄模樹脂之厚度不均引起表面不平坦之情況。First, as the conditions for detecting peeling from the desired boundary surface, input the conditions of the gate position (the depth of the boundary surface), the gate width (local peak search range), and the reference polarity (S101). The conditions are basically set by the user. Figure 6 shows a conceptual diagram of an example. 60 is the object to be inspected, and it shows that the surface is uneven due to the uneven thickness of the mold resin.
首先,於62所示之座標系統之XY面內對被檢查體60設定測定範圍,指定用於設定門之測定範圍內之任意測定點(圖中之M601)。601係自指定之測定點M601獲得之反射波,G601係設定之門之例。門寬度設定為各包含1個極性為正與負之局部峰左右之狹窄之時間長ΔT。此處,於作為參考極性設定「正」之情形時,選擇P601作為成為基準之局部峰。602表示自與測定點M601在XY空間上分開之測定點M602獲得之反射波。可知受鑄模樹脂之厚度不均之影響,相對於601,反射波602在時間上延遲接收到來自表面及界面之反射信號。First, set the measurement range on the
因此,將門偏移至適當之時間範圍(向G602移動),並選擇門G602內2個局部峰中特徵上與基準峰最相似之局部峰。藉由對自所有測定點獲得之反射波之各者進行該處理,不拘於局部峰之極性,而依序決定與設定峰P601對應之局部峰。Therefore, shift the gate to an appropriate time range (move to G602), and select the local peak of the two local peaks in gate G602 that is most similar to the reference peak in characteristics. By performing this processing on each of the reflected waves obtained from all the measurement points, the local peaks corresponding to the set peak P601 are sequentially determined regardless of the polarity of the local peaks.
因此,首先,於測定範圍內之各測定點取得反射波(S102)。接著,對輸入之測定範圍內之所有測定點,於完成取得反射波後(S103®Yes),於全反射波間進行局部峰之建立對應。Therefore, first, a reflected wave is acquired at each measurement point within the measurement range (S102). Then, for all the measurement points in the input measurement range, after the reflected wave is obtained (S103®Yes), the local peaks are established corresponding to the total reflected wave.
對各反射波,首先,檢測局部峰(S104)。作為局部峰檢測方法之一例,有二維多項式擬合之平滑化微分。其係對各反射波,以線性加權係數進行反摺積,藉此獲得微分波形(式1),使局部峰位於該微分波形之符號由正變負,或由負變正之處。此係局部峰檢測方法之一例,亦可為其他方法。For each reflected wave, first, a local peak is detected (S104). As an example of the local peak detection method, there is a smoothed differential of two-dimensional polynomial fitting. It deconvolves each reflected wave with a linear weighting coefficient to obtain a differential waveform (Equation 1), and the local peak is located where the sign of the differential waveform changes from positive to negative, or from negative to positive. This is an example of local peak detection method, but it can also be other methods.
S(z)= -(a*f(z-2)+b*f(z-1))+c*f(z)+(b*f(z+1)+c*f(z+2)) (式1) S(z):微分波形 f(z):反射回波 a=2,b=1,c=0S(z)= -(a*f(z-2)+b*f(z-1))+c*f(z)+(b*f(z+1)+c*f(z+2 )) (Formula 1) S(z): Differential waveform f(z): reflected echo a=2, b=1, c=0
接著,對檢測出之局部峰各者運算特徵量(S105)。作為一例,以其發生時間(z)、此時之峰值(f(z))為特徵量,但特徵量可為1以上之複數種,如發生時間附近之局部峰數(峰密度)、與參考波形之相互相關函數等,只要為表示局部峰之特徵者,則可為其他之特徵。又,以相互相關函數為特徵量時之參考波形可舉發送波、自良品獲得之反射波、來自表面之反射波等作為一例。Next, a feature amount is calculated for each of the detected local peaks (S105). As an example, the occurrence time (z) and the peak value (f(z)) at this time are the characteristic quantities. However, the characteristic quantities can be plural kinds of 1 or more, such as the number of local peaks (peak density) near the occurrence time, and The cross-correlation function of the reference waveform, etc., can be other characteristics as long as it is a characteristic of a local peak. In addition, the reference waveform when the cross-correlation function is used as the characteristic quantity can be a transmission wave, a reflection wave obtained from a good product, a reflection wave from a surface, etc. as an example.
且,根據是否位於初始設定之門G601內而將各局部峰分組為兩個級別,並賦予兩種標籤中之任一者(S106)。對檢測出之所有局部峰實施以上之S105、S106。And, according to whether it is located in the gate G601 of the initial setting, each partial peak is grouped into two levels, and any one of the two labels is assigned (S106). Perform the above S105 and S106 on all the detected local peaks.
圖7之70係反射波,P1~P8係自反射波70檢測出之局部峰之一部分。針對P1~P8各者,以位於設定門G701內部還是外部為局部峰之特徵量,並附加標籤。
圖7之71表示對局部峰P1~P8賦予標籤L0、L1之任一者之例。於本例中,分別對位於設定門G701內之P1、P2賦予標籤L0,對P3~P8賦予標籤L1。The 70 in FIG. 7 is the reflected wave, and P1 to P8 are part of the local peaks detected from the reflected
於對取得之全反射波進行S104~S106之後,於反射波間進行局部峰之建立對應(S107)。此係意指自全反射波特定自相同之邊界面發生之局部峰。After S104 to S106 are performed on the acquired total reflection waves, local peaks are established and corresponded between the reflection waves (S107). This refers to the local peaks that occur from the same boundary surface of the total reflection wave.
於圖8顯示局部峰之對應建立處理S107之一例。於自著眼之測定點U獲得之反射波81中,已將相對於基準峰之局部峰特定為P801。Fig. 8 shows an example of the local peak corresponding establishment processing S107. In the reflected
於實施例中,自已特定對應之局部峰之測定點U附近之測定點M、D獲得之反射波,特定對應於峰P801之局部峰。In the embodiment, the reflected waves obtained from the measurement points M and D near the measurement point U of the corresponding local peak are specified to correspond to the local peak of the peak P801.
首先,自測定點M獲得之反射波82之各局部峰,特定特徵與峰P801最相似之峰。於本例為P802。且,以包含P802之方式更新門位置(S108)。G802表示更新之門。與此同時,亦更新反射波82之局部峰之標籤。First, the local peaks of the reflected
接著,自測定點D獲得之反射波83之各局部峰,特定特徵與峰P802最相似之峰。於本例為P803。對XY空間上分開距離之測定點依序開展同樣之處理,藉此對全反射波進行峰之建立對應。Next, each of the local peaks of the reflected wave 83 obtained from the measurement point D specifies the peak with the most similar characteristic to the peak P802. In this case, it is P803. The same processing is carried out on the measurement points separated by the distance in the XY space in order to establish the correspondence between the peaks of the total reflection wave.
如上所述,一面使門沿時間方向偏移一面特定局部峰。藉此,可檢測如來自距離觸發點之時間差不固定,或,發生時間不固定之特定之界面之反射信號。又,藉由使用複數個特徵量評估相似度,可不拘於極性之不同,而建立對應。As described above, a specific local peak is shifted in the time direction while the gate is shifted. In this way, it is possible to detect if the time difference from the trigger point is not fixed, or the reflection signal from a specific interface where the time is not fixed can be detected. In addition, by using a plurality of feature quantities to evaluate the similarity, it is possible to establish a correspondence regardless of the difference in polarity.
於以上之說明中,顯示了藉由複數個特徵與更新狹窄之門來進行反射波間之局部峰與局部峰之建立對應之例,但亦可以基於動態規劃法之彈性匹配來進行反射波與反射波之統一之建立對應。如此建立對應之方法有複數種,但藉由於全反射波間進行局部峰之建立對應,而對於如無法獲得來自表面之反射信號之情形時,即,無法獲得觸發點之反射波,亦可獲得來自邊界面之反射信號。The above description shows an example of establishing correspondence between the local peaks and the local peaks between the reflected waves by using a plurality of features and updating the narrow gate. However, it is also possible to perform the reflected wave and the reflected wave based on the elastic matching of the dynamic programming method. Establish correspondence of the unity. There are multiple ways to establish correspondences in this way, but by establishing correspondences between local peaks due to the total reflection waves, when the reflected signal from the surface cannot be obtained, that is, the reflected wave from the trigger point cannot be obtained, but the reflected wave from the edge can also be obtained. The reflected signal of the interface.
圖9係相對於設定之基準峰P20,按照圖1之處理流程,自全反射波擷取對應於期望之界面之局部峰(於圖9為P21、P22、P23、P24)(S108)之結果的例。 於圖像產生部7-1中,將該等建立對應之局部峰之峰值轉換為濃淡值,並設為各測定點之像素值,藉此產生接合界面圖像1-1。Figure 9 is the result of extracting partial peaks corresponding to the desired interface from the total reflection wave (P21, P22, P23, P24 in Figure 9) (S108) according to the processing flow of Figure 1 relative to the set reference peak P20的例。 Examples. In the image generating section 7-1, the peak values of the local peaks corresponding to these are converted into shade values and set as the pixel values of each measurement point, thereby generating the bonding interface image 1-1.
另一方面,圖10之D20、D21、D22、D23、D24表示圖9中建立對應之局部峰(P21、P22、P23、P24)之路程。於圖像產生部7-1中,產生測定區域內之其等之路程分佈,並將此換算為距離而產生內部變形形狀1-3。藉此,可進行指定之界面中之構造物之傾斜或剝離角度之自動計測及可視化。On the other hand, D20, D21, D22, D23, and D24 in Fig. 10 represent the distances of establishing corresponding local peaks (P21, P22, P23, P24) in Fig. 9. In the image generating part 7-1, the distance distribution of the same in the measurement area is generated, and this is converted into a distance to generate an internal deformed shape 1-3. With this, automatic measurement and visualization of the inclination or peeling angle of the structure in the specified interface can be performed.
最後,於圖2之缺陷檢測部7-2中,比較以圖1之S101設定之參考極性與自各反射波特定出之來自期望之邊界面之局部峰之極性(S109),若極性與參考極性一致則正常,若不一致則擷取為剝離(1-2)。Finally, in the defect detection section 7-2 of Fig. 2, compare the reference polarity set in S101 of Fig. 1 with the polarity of the local peak from the desired boundary surface specified by each reflected wave (S109), if the polarity is consistent with the reference polarity It is normal, if not, it is captured as peeling (1-2).
改變顏色等將擷取結果重疊顯示於界面圖像1-1上。圖11之P110、P111、P112表示自反射波1100、1101、1102建立對應之來自同一界面之反射信號之例。於將參考極性設定為負之情形時,將極性為正之反射信號P110檢測為剝離缺陷。另,亦可將信號本身設定為參考值而非極性。Change the color, etc. to overlay the captured result on the interface image 1-1. P110, P111, and P112 in FIG. 11 represent examples of self-reflected
其一例為發送信號,將與發送信號相位反轉之反射信號檢測為剝離缺陷。又,亦可將來自表面之反射信號設定為參考信號,而將相位反轉之反射信號設為剝離缺陷。One example is the transmission signal, and the reflected signal whose phase is reversed from the transmission signal is detected as a peeling defect. In addition, it is also possible to set the reflected signal from the surface as the reference signal, and set the phase-inverted reflected signal as the peeling defect.
圖11之S110、S111、S112表示來自表面之反射信號。於該情形時,將反射信號P111、P112檢測為剝離缺陷。S110, S111, and S112 in Fig. 11 represent reflected signals from the surface. In this case, the reflected signals P111 and P112 are detected as peeling defects.
再者,於未設定參考極性或參考信號之情形時,亦可自建立對應之局部峰之特徵分佈檢測剝離。圖12之1200、1201為自各測定點檢測出之來自同一界面之反射信號之特徵分佈之例。分佈1200為檢測出之局部峰之極性分佈,且白色所示之部分表示正極性,黑色所示之部分表示負極性。可根據該黑色與白色區域之面積比或分佈之形狀,判斷正、負之哪一者相當於剝離部。此處,將面積較小且形狀擴展為圓狀之正極性之區域擷取為剝離。Furthermore, when the reference polarity or reference signal is not set, the peeling can also be detected by establishing the characteristic distribution of the corresponding local peak. 1200 and 1201 in Fig. 12 are examples of the characteristic distribution of the reflected signal from the same interface detected from each measurement point. The
1201為檢測出之局部峰之峰值與參考信號之峰值之比較值(強度差)之分佈。此處,將比較值大於固定之臨界值之區域設為剝離。又,亦可以1200、1201之組合來判定缺陷。特徵分佈不限於極性、與參考信號之強度差,亦可為與參考信號之相関函數、上升峰之極性、正峰與負峰之峰值比等任一者。1201 is the distribution of the comparison value (intensity difference) between the peak value of the detected local peak and the peak value of the reference signal. Here, the area where the comparison value is greater than the fixed critical value is referred to as peeling. In addition, a combination of 1200 and 1201 can also be used to determine defects. The characteristic distribution is not limited to the polarity, the intensity difference with the reference signal, and can be any of the correlation function with the reference signal, the polarity of the rising peak, the peak ratio between the positive peak and the negative peak, and so on.
如上所說明,根據實施例,對自被檢查體之測定區域獲得之全反射波,將自同一界面獲得之局部峰於反射波間不拘於極性之不同地建立對應,藉此可高精度地捕捉相位反轉之部位。藉此,可檢測微小之剝離或空隙等缺陷。As explained above, according to the embodiment, for the total reflection wave obtained from the measurement area of the subject, the local peaks obtained from the same interface and the reflected waves are matched irrespective of the difference in polarity, so that the phase can be captured with high precision. Reversal position. In this way, it is possible to detect defects such as tiny peeling or voids.
1‧‧‧檢測部 1-1‧‧‧界面圖像 1-2‧‧‧擷取剝離 1-3‧‧‧內部變形形狀 2‧‧‧超音波探針 3‧‧‧探傷儀 4‧‧‧反射波 5‧‧‧試料 6‧‧‧A/D轉換器 7‧‧‧信號處理部 7-1‧‧‧圖像產生部 7-2‧‧‧缺陷檢測部 7-3‧‧‧資料輸出部 7-4‧‧‧參數設定部 8‧‧‧全體控制部 10‧‧‧座標系統 11‧‧‧掃描台 12‧‧‧水槽 13‧‧‧掃描器 14‧‧‧水 15‧‧‧固持器 16‧‧‧機械控制器 17‧‧‧使用者介面 18‧‧‧資料庫 18‧‧‧記憶裝置 22‧‧‧電纜 40‧‧‧印刷配線基板 41‧‧‧焊料球 42‧‧‧半導體器件 43‧‧‧晶片 44‧‧‧晶片 45‧‧‧晶片 46‧‧‧插入式基板 47‧‧‧凸塊 48‧‧‧樹脂 49‧‧‧超音波 50‧‧‧局部反射波 51‧‧‧S門 52‧‧‧F門 53‧‧‧觸發點 54‧‧‧局部峰 60‧‧‧被檢查體 62‧‧‧座標系統 70‧‧‧反射波 71‧‧‧對局部峰賦予標籤 81‧‧‧反射波 82‧‧‧反射波 83‧‧‧反射波 100‧‧‧超音波檢查裝置 400‧‧‧被檢查體 601‧‧‧反射波 602‧‧‧反射波 1100‧‧‧反射波 1101‧‧‧反射波 1102‧‧‧反射波 1200‧‧‧分佈 1201‧‧‧分佈 D‧‧‧測定點 D20~D24‧‧‧路程 G601‧‧‧設定門 G602‧‧‧設定門 G701‧‧‧設定門 G802‧‧‧更新之門 L0‧‧‧標籤 L1‧‧‧標籤 M‧‧‧測定點 M601‧‧‧測定點 M602‧‧‧測定點 P1~P8‧‧‧局部峰之一部分 P20‧‧‧基準峰 P21~P24‧‧‧局部峰 P110~P112‧‧‧反射信號 P601‧‧‧設定峰 P602‧‧‧設定峰 P801‧‧‧峰 P802‧‧‧峰 P803‧‧‧峰 S101~S109‧‧‧步驟 S110~S112‧‧‧反射信號 U‧‧‧測定點 X‧‧‧方向 Y‧‧‧方向 Z‧‧‧方向1‧‧‧Testing Department 1-1‧‧‧Interface image 1-2‧‧‧Capture and peel 1-3‧‧‧Internal deformed shape 2‧‧‧Ultrasonic Probe 3‧‧‧Flaw detector 4‧‧‧Reflected wave 5‧‧‧Sample 6‧‧‧A/D converter 7‧‧‧Signal Processing Department 7-1‧‧‧Image Generation Department 7-2‧‧‧Defect Inspection Department 7-3‧‧‧Data output department 7-4‧‧‧Parameter setting section 8‧‧‧All control department 10‧‧‧Coordinate System 11‧‧‧Scanning table 12‧‧‧Sink 13‧‧‧Scanner 14‧‧‧Water 15‧‧‧Holder 16‧‧‧Mechanical Controller 17‧‧‧User Interface 18‧‧‧Database 18‧‧‧Memory device 22‧‧‧Cable 40‧‧‧Printed Wiring Board 41‧‧‧Solder Ball 42‧‧‧Semiconductor device 43‧‧‧Chip 44‧‧‧Chip 45‧‧‧chip 46‧‧‧Plug-in base plate 47‧‧‧ bump 48‧‧‧Resin 49‧‧‧Ultrasonic 50‧‧‧Partially reflected wave 51‧‧‧S door 52‧‧‧F door 53‧‧‧Trigger point 54‧‧‧Local Peak 60‧‧‧Subject 62‧‧‧Coordinate System 70‧‧‧reflected wave 71‧‧‧Label local peaks 81‧‧‧reflected wave 82‧‧‧reflected wave 83‧‧‧reflected wave 100‧‧‧Ultrasonic inspection device 400‧‧‧Examined body 601‧‧‧reflected wave 602‧‧‧reflected wave 1100‧‧‧reflected wave 1101‧‧‧reflected wave 1102‧‧‧reflected wave 1200‧‧‧distribution 1201‧‧‧distribution D‧‧‧Measurement point D20~D24‧‧‧Route G601‧‧‧Set door G602‧‧‧Set door G701‧‧‧Set door G802‧‧‧Gate of Renewal L0‧‧‧label L1‧‧‧label M‧‧‧Measurement point M601‧‧‧Measurement point M602‧‧‧Measurement point P1~P8‧‧‧Part of the local peak P20‧‧‧reference peak P21~P24‧‧‧Local peak P110~P112‧‧‧Reflected signal P601‧‧‧Set Peak P602‧‧‧Set Peak P801‧‧‧peak P802‧‧‧peak P803‧‧‧peak S101~S109‧‧‧Step S110~S112‧‧‧Reflected signal U‧‧‧Measurement point X‧‧‧direction Y‧‧‧ direction Z‧‧‧ direction
圖1係顯示實施例之具有多層構造體之半導體封裝之超音波檢查方法之處理程序之例的圖。 圖2係顯示實施例之超音波檢查裝置之概念之方塊圖。 圖3係顯示實施例之超音波裝置之概略構成之方塊圖。 圖4係實施例中具有設為檢查對象之多層構造體之半導體封裝之縱構造之模式圖。 圖5係顯示自具有設為檢查對象之多層構造體之半導體封裝獲得之反射回波與先前之門控制方式之門設定之例的圖。 圖6係顯示門設定之例之圖。 圖7係顯示局部峰之附加標籤之例之圖。 圖8係顯示局部峰之建立對應處理之例之圖。 圖9係顯示反射回波間之局部峰之建立對應之結果之例的圖。 圖10係顯示基於建立對應之局部峰之內部變形形狀計測之例之圖。 圖11係顯示建立對應之局部峰與參考信號之比較例之圖。 圖12係顯示本發明之實施例之建立對應之局部峰之特徵分佈例之圖。FIG. 1 is a diagram showing an example of a processing procedure of an ultrasonic inspection method of a semiconductor package with a multilayer structure according to the embodiment. Fig. 2 is a block diagram showing the concept of the ultrasonic inspection device of the embodiment. Fig. 3 is a block diagram showing the schematic structure of the ultrasonic device of the embodiment. 4 is a schematic diagram of the vertical structure of a semiconductor package having a multilayer structure as an inspection target in the embodiment. FIG. 5 is a diagram showing an example of the reflected echo obtained from a semiconductor package having a multilayer structure as an inspection target and the gate setting of the previous gate control method. Figure 6 is a diagram showing an example of door setting. Figure 7 is a diagram showing an example of labeling of local peaks. Fig. 8 is a diagram showing an example of the corresponding processing of establishing a local peak. Fig. 9 is a diagram showing an example of the result of establishing the correspondence between the local peaks between the reflected echoes. Fig. 10 is a diagram showing an example of internal deformation shape measurement based on the establishment of corresponding local peaks. FIG. 11 is a diagram showing a comparative example of establishing the corresponding partial peak and the reference signal. FIG. 12 is a diagram showing an example of the feature distribution of corresponding local peaks in the embodiment of the present invention.
1‧‧‧檢測部 1‧‧‧Testing Department
2‧‧‧超音波探針 2‧‧‧Ultrasonic Probe
3‧‧‧探傷儀 3‧‧‧Flaw detector
4‧‧‧反射波 4‧‧‧Reflected wave
5‧‧‧試料 5‧‧‧Sample
6‧‧‧A/D轉換器 6‧‧‧A/D converter
7‧‧‧信號處理部 7‧‧‧Signal Processing Department
7-1‧‧‧圖像產生部 7-1‧‧‧Image Generation Department
7-2‧‧‧缺陷檢測部 7-2‧‧‧Defect Inspection Department
7-3‧‧‧資料輸出部 7-3‧‧‧Data output department
8‧‧‧全體控制部 8‧‧‧All control department
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018076468A JP7042149B2 (en) | 2018-04-12 | 2018-04-12 | Ultrasonic inspection equipment and ultrasonic inspection method |
JP2018-076468 | 2018-04-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201944069A TW201944069A (en) | 2019-11-16 |
TWI735862B true TWI735862B (en) | 2021-08-11 |
Family
ID=68248462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108112441A TWI735862B (en) | 2018-04-12 | 2019-04-10 | Ultrasonic inspection device and ultrasonic inspection method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7042149B2 (en) |
KR (1) | KR20190119523A (en) |
CN (1) | CN110376280A (en) |
TW (1) | TWI735862B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111929361A (en) * | 2020-08-07 | 2020-11-13 | 广东汕头超声电子股份有限公司 | Ultrasonic detection auxiliary recording method |
KR20230027306A (en) * | 2020-09-03 | 2023-02-27 | 코니카 미놀타 가부시키가이샤 | Ultrasonic inspection device, support inspection method, and support inspection program |
JP7472775B2 (en) * | 2020-12-21 | 2024-04-23 | 株式会社島津製作所 | Waveform processing support device and waveform processing support method |
JP2022121859A (en) * | 2021-02-09 | 2022-08-22 | 株式会社日立パワーソリューションズ | Ultrasonic inspection device, ultrasonic inspection method and program |
JP2023008629A (en) * | 2021-07-06 | 2023-01-19 | 株式会社日立パワーソリューションズ | Ultrasonic inspection device and ultrasonic inspection method |
KR20230076184A (en) * | 2021-11-24 | 2023-05-31 | 주식회사 메타소닉 | Screening apparatus and method for latent defects of stack-type semiconductor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7477773B2 (en) * | 2003-10-17 | 2009-01-13 | Kabushiki Kaisha Toshiba | Method for inspecting a pattern and method for manufacturing a semiconductor chip having a circuit pattern |
TW201713946A (en) * | 2015-10-08 | 2017-04-16 | Hitachi Power Solutions Co Ltd | Defect inspection method and device thereof which separates internal defects from the normal pattern and conducts detection with high sensitivity during inspection of a test subject containing a fine and multilayer structure |
JP2017129444A (en) * | 2016-01-20 | 2017-07-27 | 株式会社日立パワーソリューションズ | Ultrasonic inspection method and device |
CN107710786A (en) * | 2015-06-30 | 2018-02-16 | 株式会社日立电力解决方案 | Ultrasonic probe and apparatus for ultrasonic examination |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8600444A (en) * | 1986-02-21 | 1987-09-16 | Optische Ind De Oude Delft Nv | DEVICE FOR ULTRA-SOUND DETECTION. |
US5641906A (en) * | 1988-03-23 | 1997-06-24 | Texas Instruments Incorporated | Apparatus and method for automated non-destructive inspection of integrated circuit packages |
JPH03223670A (en) * | 1990-01-30 | 1991-10-02 | Olympus Optical Co Ltd | Ultrasonic microscope |
JPH05232092A (en) * | 1992-02-21 | 1993-09-07 | Canon Inc | Supersonic wave inspection device |
JP2001215218A (en) * | 2000-02-02 | 2001-08-10 | Imc:Kk | Ultrasonic flaw detector |
KR101137141B1 (en) * | 2007-03-29 | 2012-04-20 | 파나소닉 주식회사 | Ultrasonic wave measuring method and apparatus |
JP5416726B2 (en) * | 2011-01-28 | 2014-02-12 | 株式会社日立パワーソリューションズ | Ultrasonic inspection apparatus and ultrasonic inspection method |
JP6540185B2 (en) * | 2015-04-16 | 2019-07-10 | 日本製鉄株式会社 | Defect inspection apparatus, control method therefor, program, and storage medium |
WO2017056968A1 (en) * | 2015-09-29 | 2017-04-06 | 株式会社資生堂 | Surface property measuring method, surface property measuring device, and surface property measuring program |
-
2018
- 2018-04-12 JP JP2018076468A patent/JP7042149B2/en active Active
-
2019
- 2019-04-04 KR KR1020190039447A patent/KR20190119523A/en not_active IP Right Cessation
- 2019-04-10 TW TW108112441A patent/TWI735862B/en active
- 2019-04-11 CN CN201910291011.2A patent/CN110376280A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7477773B2 (en) * | 2003-10-17 | 2009-01-13 | Kabushiki Kaisha Toshiba | Method for inspecting a pattern and method for manufacturing a semiconductor chip having a circuit pattern |
CN107710786A (en) * | 2015-06-30 | 2018-02-16 | 株式会社日立电力解决方案 | Ultrasonic probe and apparatus for ultrasonic examination |
TW201713946A (en) * | 2015-10-08 | 2017-04-16 | Hitachi Power Solutions Co Ltd | Defect inspection method and device thereof which separates internal defects from the normal pattern and conducts detection with high sensitivity during inspection of a test subject containing a fine and multilayer structure |
JP2017129444A (en) * | 2016-01-20 | 2017-07-27 | 株式会社日立パワーソリューションズ | Ultrasonic inspection method and device |
Also Published As
Publication number | Publication date |
---|---|
JP2019184449A (en) | 2019-10-24 |
JP7042149B2 (en) | 2022-03-25 |
CN110376280A (en) | 2019-10-25 |
KR20190119523A (en) | 2019-10-22 |
TW201944069A (en) | 2019-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI735862B (en) | Ultrasonic inspection device and ultrasonic inspection method | |
JP6546826B2 (en) | Defect inspection method and apparatus therefor | |
JP6608292B2 (en) | Ultrasonic inspection method and apparatus | |
JP6310814B2 (en) | Image processing method and ultrasonic inspection method and apparatus using the same | |
JP5154422B2 (en) | Ultrasonic measurement method and apparatus | |
TWI768448B (en) | Ultrasonic inspection device and ultrasonic inspection method | |
JP2010169558A (en) | Ultrasonic measuring device | |
US10663433B2 (en) | Ultrasound imaging device and method of generating image for ultrasound imaging device | |
JP6797646B2 (en) | Ultrasonic inspection equipment and ultrasonic inspection method | |
TWI824581B (en) | Ultrasonic inspection device and ultrasonic inspection method | |
WO2022173062A1 (en) | Ultrasonic wave inspection device, ultrasonic inspection method, and program | |
Diaz de Leon et al. | Failure analysis of flip-chip interconnections through acoustic microscopy | |
Mitsuta et al. | High Sensitivity Ultrasonic Inspection Technique Using Pulse Compression Method |