TWI735819B - Substrate processing device, semiconductor device manufacturing method and recording medium - Google Patents

Abstract

Provides a technology that can perform uniform substrate processing. Provide a technology with the following composition: Processing room, which processes substrates; The substrate holding portion, which holds the aforementioned substrate; A gas introduction part, which introduces cooling gas into the aforementioned processing chamber; An exhaust part, which exhausts the cooling gas supplied to the processing chamber; Multiple microwave generators, which are used to generate microwaves; A temperature measuring part that measures the temperature of the central part and the edge part of the substrate held in the substrate holding part; and The control unit is configured to control the gas introduction unit and the plurality of microwave generators so as to adjust the introduction of the gas from the gas introduction unit in accordance with the temperature of the center and edge portions of the substrate measured by the temperature measurement unit The supply flow rate of the cooling gas is stopped, and at least one of the plurality of microwave generators is stopped.

Description

Substrate processing device, semiconductor device manufacturing method and recording medium

The present invention relates to a substrate processing device, a method of manufacturing a semiconductor device, and a recording medium.

As one of the manufacturing processes of semiconductor devices (semiconductor devices), for example, there are heating devices to heat the substrate in the processing chamber, to change the composition or crystal structure of the thin film formed on the surface of the substrate, or to repair the formed film The annealing treatment of crystal defects in the film is a typical modification treatment. In recent semiconductor devices, miniaturization and high integration have been remarkable, and accordingly, there has been a demand for a high-density substrate forming a pattern with a high aspect ratio to undergo a modification process. As a method of reforming such a high-density substrate, a heat treatment method using microwaves has been reviewed. Prior art literature Patent literature

Patent Document 1: Japanese Patent Application Publication No. 2015-070045

(The problem to be solved by the invention)

In the conventional heat treatment using microwaves, the substrate may not be heated uniformly, and the uniform treatment of the target film may not be possible.

The object of the present invention is to provide a technique that can perform uniform substrate processing. (Means to solve the problem)

According to one aspect of the present invention, a technology with the following constitution is provided: Processing room, which processes substrates; The substrate holding portion, which holds the aforementioned substrate; A gas introduction part, which introduces cooling gas into the aforementioned processing chamber; An exhaust part, which exhausts the cooling gas supplied to the processing chamber; Multiple microwave generators, which are used to generate microwaves; A temperature measuring part that measures the temperature of the central part and the edge part of the substrate held in the substrate holding part; and The control section is configured to control the gas introduction section and the plurality of microwave generators so that the temperature of the center and edge portions of the substrate measured by the temperature measurement section can be adjusted from the gas introduction section. The supply flow rate of the introduced cooling gas is stopped, and at least one of the plurality of microwave generators is stopped. [Effects of the invention]

According to the present invention, it is possible to provide a technology that can perform uniform substrate processing.

Hereinafter, the embodiments of the present invention will be described with reference to the drawings. However, in the following description, the same reference numerals may be attached to the same constituent elements to omit overlapping descriptions. In addition, in order to clarify the description, the drawings may schematically show the width, thickness, shape, etc. of each part compared to the actual form, but it is only an example after all, and does not limit the interpretation of the present invention.

<One embodiment of the present invention> Hereinafter, one embodiment of the present invention will be described based on the drawings.

(1) Configuration of substrate processing equipment In this embodiment, the substrate processing apparatus 100 of the present invention is a single-piece heat treatment apparatus configured to perform various heat treatments on wafers. In this embodiment, the substrate processing apparatus 100 will be described as an apparatus that performs an annealing process (modification process) using electromagnetic waves, which will be described later.

(Processing room) As shown in FIG. 1, the substrate processing apparatus 100 of this embodiment has: A processing box 102 that is a chamber (upper container) made of materials that reflect electromagnetic waves, such as metals; and A cylindrical reaction tube 103 is housed in the processing box 102 and the upper and lower ends in the vertical direction are opened. The reaction tube 103 is made of a material that transmits electromagnetic waves such as quartz. In addition, the flange cover (closing plate) 104 made of a metal material abuts against the upper end of the reaction tube 103 via an O-ring 220 as a sealing member (closing member) to close the upper end of the reaction tube 103. The processing chamber 102, the reaction tube 103, and the flange cover 104 mainly constitute a processing container for processing substrates such as silicon wafers, and in particular, the inner space of the reaction tube 103 is constituted as the processing chamber 201. The reaction tube 103 may not be provided, and the processing box 102 and the flange cover 104 may constitute a processing container. In this case, the internal space of the processing box 102 becomes the processing chamber 201. Moreover, the flange cover 104 may not be provided, and the processing tank 102 with the top closed may be used, and the processing tank 102 and the reaction tube 103, or the processing tank 102 may constitute a processing container.

Below the reaction tube 103 is a mounting table 210, and on the upper surface of the mounting table 210 is a wafer boat 217 on which a substrate holder (substrate holding portion) for holding a wafer 200 as a substrate is placed. In the wafer boat 217, the wafer 200 to be processed, the heating plates (susceptors) 1011a, 1011b that are placed up and down in the vertical direction of the wafer 200 so as to sandwich the wafer 200, and the heating plates 1011a, The quartz plates 101a and 101b, which are placed in the vertical direction up and down as heat shields, are held at predetermined intervals in the form of 1011b. That is, the heating plates 101a and 1011b are placed on the outside of the wafer 200 and inside the quartz plate 101a and the quartz plate 101b. The heating plates 1011a and 1011b are radiating plates or soaking plates that have the function of indirectly heating the wafer 200. A silicon plate (Si plate) or a silicon carbide plate (SiC plate) absorbs electromagnetic waves and is heated by itself. Formed by quality and other materials. With this configuration, the wafer 200 can be heated more efficiently and uniformly. In the present embodiment, the quartz plates 101a and 101b are the same parts. Hereinafter, when there is no need to distinguish them, they will be referred to as the quartz plate 101 for description. In addition, the heating plates 1011a and 1011b are the same parts. Hereinafter, when there is no need to distinguish them, they will be referred to as a heating plate 1011 for description.

On the side wall of the mounting table 210, a protruding portion (not shown) that protrudes in the radial direction of the mounting table 210 is provided on the bottom surface side of the mounting table 210. By this protruding portion approaching or contacting the partition plate 204 provided between the processing chamber 201 and the conveying space 203 described later, the atmosphere in the processing chamber 201 is prevented from moving to the conveying space 203 or the atmosphere in the conveying space 203 Move toward the processing chamber 201.

The processing box 102 as the upper container is, for example, a closed container with a circular cross section and a flat structure. In addition, the transport container 202 as the lower container is made of, for example, a metal material such as aluminum (Al) or stainless steel (SUS), or quartz. Below the processing container is a transfer area 203 in which wafers 200 such as silicon wafers are transferred. In addition, there is a space surrounded by the processing box 102 or a space surrounded by the reaction tube 103, and the space above the partition plate 204 is called the processing chamber 201 or the reaction area 201 as the processing space, and the space surrounded by the transfer container 202 The space, the space below the partition plate is referred to as the transport area 203 as the transport space. In addition, the processing chamber 201 and the conveying area 203 are not limited to being configured to be adjacent to the vertical direction as in the present embodiment, and may be configured to be adjacent to the horizontal direction, or the conveying area 203 may not be provided and only the processing chamber 201 may be configured.

On the side of the transfer container 202 is a substrate carry-in/outlet 206 with a gate valve 205, and the wafer 200 is moved between the substrate transfer chamber (not shown) via the substrate carry-in/outlet 206.

On the side surface of the processing box 102 is provided an electromagnetic wave supply unit as a heating device described in detail later. Electromagnetic waves such as microwaves supplied from the electromagnetic wave supply unit are introduced into the processing chamber 201 to heat the wafer 200 and the like, and the wafer 200 is processed.

The mounting table 210 is supported by a shaft 255 as a rotating shaft. The shaft 255 penetrates the bottom of the transport container 202 and is further connected to a drive mechanism 267 that performs rotation and elevation operations on the outside of the transport container 202. The driving mechanism 267 is actuated to rotate and lift the shaft 255 and the mounting table 210, whereby the wafer 200 placed on the wafer boat 217 can be rotated or lifted. In addition, the periphery of the lower end of the shaft 255 is covered with a corrugated tube 212, and the processing chamber 201 and the conveying area 203 are kept airtight.

The mounting table 210 is lowered so that the upper surface of the mounting table becomes the position (wafer conveying position) of the substrate carrying-in/outlet 206 when the wafer 200 is transported. When the wafer 200 is processed, it is as shown in FIG. 1. The wafer 200 rises to the processing position (wafer processing position) in the processing chamber 201. In addition, as described above, the processing chamber 201 and the conveying area 203 are adjacent to each other in the horizontal direction, or the conveying area 203 is not provided and only the processing chamber 201 is configured. The rotating mechanism of the mounting table.

(Exhaust part) Below the processing chamber 201, on the outer peripheral side of the mounting table 210, an exhaust part for exhausting the atmosphere of the processing chamber 201 is provided. As shown in FIG. 1, the exhaust port 221 is provided in the exhaust part. An exhaust pipe 231 is connected to the exhaust port 221, and the exhaust pipe 231 is connected in series with a pressure regulator 244 such as an APC valve that controls the opening of the valve in accordance with the pressure in the processing chamber 201, and a vacuum pump 246.

Here, the pressure regulator 244 is not limited to the APC valve as long as it can receive pressure information (feedback signal from the pressure sensor 245 described later) in the processing chamber 201 to adjust the displacement, and it is not limited to the APC valve, and it may be configured to use a common one in combination. On-off valve and pressure regulating valve.

The exhaust pipe 231 and the pressure regulator 244 mainly constitute an exhaust part (also referred to as an exhaust system or an exhaust line). In addition, the exhaust port may be provided so as to surround the mounting table 210 so that the gas can be exhausted from the entire circumference of the wafer 200. Moreover, a vacuum pump 246 may be added to the structure of the exhaust part.

(Gas supply part) The flange cover 104 provided in the upper part of the processing chamber 201 is provided with a gas inlet (gas inlet) 222, and the gas inlet 222 is connected to supply inert gas, raw material gas, reaction gas, etc. Various processing gases for substrate processing are supplied to the gas supply pipe 232 in the processing chamber 201. The gas supply pipe 232 is provided with a mass flow controller (MFC) 241 of a flow controller (flow control unit) and a valve 243 of an on-off valve in this order from the upstream. _{A nitrogen (N 2} ) gas source such as an inert gas is connected to the upstream side of the gas supply pipe 232, and the nitrogen (N ₂ ) gas is supplied into the processing chamber 201 from the gas inlet 222 via the MFC 241 and the valve 243.

In this embodiment, the gas inlet 222 can cool _{the edge of the wafer 200 with a cooling gas (for example, N 2} gas), so it is provided at the upper part of the flange cover 104 corresponding to the edge of the wafer 200 Place. _{Thereby, the N 2} gas as the cooling gas supplied from the gas inlet 222 into the reaction chamber 201 flows to the vicinity of the edge of the wafer 200, and the temperature of the edge of the wafer 200 can be cooled to a desired temperature. _{The N 2} gas flowing to the vicinity of the edge of the wafer 200 is exhausted from the exhaust port 221. In addition, the edge portion of the wafer 200 means the outer peripheral portion or the peripheral edge portion of the wafer 200.

When multiple types of gases are used during substrate processing, the multiple types of gases can be supplied by connecting the gas supply pipe. The gas supply pipe is located on the downstream side of the valve 243 of the gas supply pipe 232 and depends on the upstream direction. The MFC of the flow controller and the valve of the opening and closing valve are arranged in sequence. It is also possible to install a gas supply pipe equipped with MFC and valves for each gas type.

The gas supply system (gas supply unit) is mainly composed of the gas supply pipe 232, the MFC 241, the valve 243, and the gas inlet 222. When the inert gas flows to the gas supply system, it is also referred to as an inert gas supply system. As the inert gas, in addition to N ₂ gas, rare gases such as Ar gas, He gas, Ne gas, and Xe gas can be used.

In this embodiment, a configuration example in which one gas supply unit is provided is shown, but it is not limited to this. The gas supply part only needs to be installed at least one, and it may be installed in plural. In this case, the gas introduction port is also provided in the upper part of the flange cover 104 corresponding to the edge of the wafer 200. In addition, in the present embodiment, a configuration example of the flange cover 104 in which the gas introduction port 222 is provided in the upper portion of the processing chamber 201 is shown, but it is not limited to this. The gas inlet 222 may also be provided on the side wall of the processing chamber 201 (the side wall of the reaction tube 103).

(Temperature sensor) The flange cover 104 is provided with temperature sensors 263a and 263b as non-contact temperature measuring devices (temperature measuring parts). The output of the microwave generator 655 described later is adjusted based on the temperature information detected by the temperature sensors 263a and 263b, thereby heating the substrate, and the substrate temperature becomes a desired temperature distribution. The temperature sensors 263a and 263b are constituted by radiation thermometers such as IR (Infrared Radiation) sensors, for example.

The temperature sensor 263a is configured to measure the surface temperature of the center portion of the quartz plate 101a of the heat shield, the surface temperature of the center portion of the wafer 200, or the surface temperature of the center portion of the heating plate 1011a. The temperature sensor 263b is configured to measure the surface temperature of the edge portion of the heating plate 1011a. The edge part of the heating plate 1011a means the outer peripheral part or the part of the peripheral edge part of the heating plate 1011a.

The temperature sensor 263a, 263b is comprised so that the surface temperature of the center part and edge part of the heating plate 1011a which is a heating element may be measured. In this case, the wavelength detected by the temperature sensors 263a and 263b is the wavelength of the quartz plate 101a that passes through the heat shield, and preferably a wavelength of 1.5 μm. The in-plane temperature of the heating plate 1011a is almost the same as the in-plane temperature of the wafer 200. Therefore, the temperature sensors 263a and 263b are used to measure the surface temperature of the central part and the edge part of the heating plate 1011a. The surface temperature of the center part and the surface temperature of the edge part of the wafer 200 are estimated. Based on the estimated surface temperature of the center portion and the edge portion of the wafer 200, the output of the microwave generator 655, that is, the control of the heating device, the control of the flow rate adjustment of the MFC 241, and the control of the opening and closing of the valve 243 are performed.

In addition, when the temperature of the wafer 200 (wafer temperature) is described in the present invention, it refers to the wafer temperature converted based on the temperature conversion data described later, that is, the wafer temperature whose meaning is estimated, and the meaning is borrowed When the temperature obtained by directly measuring the temperature of the wafer 200 by the temperature sensor 263a, and when it means both of these will be described. The temperature sensors 263a and 263b are described as the temperature sensor 263 when there is no need to distinguish them.

In addition, when the temperature sensor 263b is used to measure the surface temperature of the edge of the quartz plate 101a and the wafer 200, the temperature sensor 263b is used to measure the temperature of the edge of the quartz plate 101a as described above. For the temperature of the edge of the circle 200, a measuring hole (not shown) is also provided on the quartz plate 101a and a measuring hole (not shown) is provided on the edge of the heating plate 1011a, and the temperature sensor 263b is used to measure the wafer The surface temperature of the edge.

As shown in FIG. 2, the surface temperature of the center part and the surface temperature of the edge part of the heating plate 1011a are measured by the temperature sensors 263a, 263b. As described above, the wavelength detected by the temperature sensors 263a and 263b is used as the wavelength (for example, 1.5 μm) transmitted through the quartz plate 101a, and the surface temperature of each is measured. In this embodiment, the temperature measurement of the surface temperature of the center part and the surface temperature of the edge part of the heating plate 1011a is utilized in the substrate processing process (modification process) mentioned later. When it is necessary to measure the surface temperature of the center portion and the surface temperature of the edge portion of the quartz plate 101a, the wavelength detected by the temperature sensors 263a and 263b may be used as the wavelength that does not pass through the quartz plate 101a, and the surface temperature of each can be measured.

In addition, as a means for measuring the temperature of the wafer 200, it is not limited to the above-mentioned radiation thermometer. Thermography or thermocouples can also be used for temperature measurement, or a combination of thermography, thermocouples and non-contact thermometers can also be used. Perform temperature measurement. However, when temperature measurement is performed using a thermocouple, it is necessary to arrange the thermocouple in the vicinity of the wafer 200 to perform temperature measurement. That is, because it is necessary to dispose a thermocouple in the processing chamber 201, the thermocouple itself is heated by microwaves supplied from a microwave generator described later, and therefore the temperature cannot be accurately measured. Therefore, it is ideal to use a non-contact thermometer as the temperature sensor 263.

In addition, the temperature sensor 263 is not limited to being provided on the flange cover 104, and may be provided on the mounting table 210. In addition, the temperature sensor 263 is not only directly installed on the flange cover 104 or the mounting table 210, but can also be configured to reflect the radiated light from the measurement window provided on the flange cover 104 or the mounting table 210 on a mirror or the like to indirectly地测。 Ground determination. In addition, the temperature sensors 263a and 263b are not limited to two, and a plurality of temperature sensors may be installed.

(Electromagnetic wave supply department) In FIG. 3, in order to avoid the complexity of the drawing, the illustration of the microwave generator 655 is omitted.

Next, the structure of the electromagnetic wave supply unit will be described with reference to FIGS. 1 and 3. In this embodiment, as shown in FIG. 3, a structure having six electromagnetic wave supply parts is illustrated and explained. In addition, in FIG. 1, for convenience, electromagnetic wave introduction ports 653-1, 653-4, waveguides 654-1, 654-4, microwave generator 655-1, and 655-4. The electromagnetic wave inlet port can also be regarded as an electromagnetic waveguide inlet.

As shown in Fig. 3, six electromagnetic wave introduction ports (first introduction port 653-1, second introduction port 653-2, third introduction port 653-3, The fourth inlet 653-4, the fifth inlet 653-5, and the sixth inlet 653-6). Each of the first introduction port 653-1 to the sixth introduction port 653-6 is connected to the six waveguides (the first waveguide 654-1, the second waveguide for supplying electromagnetic waves to the processing chamber 201). One end of each of the wave tube 654-2, the third wave guide tube 654-3, the fourth wave guide tube 654-4, the fifth wave guide tube 654-5, and the sixth wave guide tube 654-6). To the other end of each of the first wave guide tube 654-1 to the sixth wave guide tube 654-6, six microwave generators (No. 1 Microwave generator 655-1, second microwave generator 655-2, third microwave generator 655-3, fourth microwave generator 655-4, fifth microwave generator 655-5, sixth microwave generator 655 -6). The microwave generator can also be called an electromagnetic wave source (microwave source). In addition, although not shown in FIGS. 4 and 5, as described above, a fourth microwave generator 655 is connected to the other end of each of the fourth waveguide 654-4 and the fifth waveguide 654-5. -4. The fifth microwave generator 655-5.

As shown in FIGS. 3, 4, and 5, the wafer 200 is in this example, the substantially central part of the processing box 102, that is, in the side view of FIG. 4, is arranged in the electromagnetic wave introduction port 653-3 and The height position between 653-6, and, in the top view of FIG. Thereby, the microwaves supplied from the six electromagnetic wave introduction ports can be irradiated almost equally to the upper and lower surfaces or the whole of the wafer 200.

In addition, FIG. 3 shows an example of an electromagnetic wave supply unit provided with six electromagnetic wave introduction ports, but the number of electromagnetic wave introduction ports may also be four. In this case, for example, the electromagnetic wave introduction ports 653-2 and 653-5 and their associated waveguides 654-2 and 654-5, and the microwave generators 655-2 and 655-5 are removed. The electromagnetic wave supply unit uses 4 electromagnetic wave inlet ports 654-1, 654-3, 654-4, 654-6, and 4 waveguides 654-1, 654-3, 654-4, 654-6, It consists of 4 microwave generators 655-1, 655-3, 655-4, and 655-6. With this configuration, the distances of the four electromagnetic wave introduction ports 654-1, 654-3, 654-4, and 654-6 with respect to the wafer 200 in the processing box 102 or the processing chamber 201 are approximately equalized, thereby The microwaves from each electromagnetic wave introduction port can be applied to the wafer 200 substantially equally.

The microwave generators 655-1 to 655-6 respectively supply electromagnetic waves such as microwaves to the waveguides 654-1 to 654-6, and from the introduction ports 653- through the waveguides 654-1 to 654-6. 1~653-6 supplies electromagnetic waves into the processing chamber 201. In addition, magnetrons, klystrons, etc. can be used for each of the microwave generators 655-1 to 655-6. From now on, electromagnetic wave introduction ports 653-1 to 653-6, waveguides 654-1 to 654-6, and microwave generators 655-1 to 655-6 are described as electromagnetic wave introduction ports 653, The waveguide 654 and the microwave generator 655 will be described.

The frequency of the electromagnetic wave generated by the microwave generator 655 is ideally controlled to a frequency range above 13.56 MHz and below 24.125 GHz. It is ideal to control the frequency to 2.45GHz or 5.8GHz more appropriately. Here, the frequency of each of the microwave generators 655-1 to 655-6 may be set to the same frequency, or may be set to different frequencies.

In addition, in the present embodiment, six microwave generators 655 are described as being arranged on the side surface of the processing box 102, but it is not limited to this. In addition, the microwave generator 655 is provided on one side surface of the processing box 102, but it may be arranged on a different side surface such as the opposing side surface of the processing box 102.

The microwave generator 655-1~655-6, the waveguide 654-1~654-6 and the electromagnetic wave inlet 653-1~653-6 constitute the electromagnetic wave supply part (also called electromagnetic wave supply) as the heating device. Device, microwave supply unit, microwave supply device).

The controller 121 described later is connected to each of the microwave generators 655-1 to 655-6. The controller 121 is connected to a temperature sensor 263 that measures the temperature of the quartz plate 101 a or 101 b or the wafer 200 contained in the processing chamber 201. The temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the above method and transmits it to the controller 121. The controller 121 controls the output of the microwave generators 655-1 to 655-6. Heating of the wafer 200. In addition, as a method of heating control by the heating device, a method of controlling the heating of the wafer 200 by controlling the voltage input to the microwave generator 655, and by changing the power of the microwave generator 655 to ON The ratio of the time of) to the time of OFF is used to control the heating method of the wafer 200 and so on.

Here, the microwave generators 655-1 to 655-6 are controlled by the same control signal transmitted from the controller 121. However, it is not limited to this, and it may be configured to transmit individual control signals from the controller 121 to each of the microwave generators 655-1 to 655-6, thereby individually controlling the microwave generators 655-1 to 655-6.

(Control device) As shown in FIG. 6, the controller 121 of the control unit (control device, control means) is configured to include a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a memory device 121c, and an I/O port 121d. computer. The RAM 121b, the memory device 121c, and the I/O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e. An input/output device 122 configured as a touch pad or the like is connected to the controller 121.

The storage device 121c is constituted by, for example, flash memory, HDD (Hard Disk Drive), or the like. In the memory device 121c, a control program that controls the operation of the substrate processing apparatus, or a process recipe that records the annealing (modification) process, conditions, and the like is stored in a readable manner. The process recipe is a program function that is combined so that each program of the substrate processing process described later can be executed on the controller 121 and a predetermined result can be obtained. Hereinafter, this process recipe or control program is also referred to as a program in general. In addition, the process prescription is also referred to as a prescription for short. When using the term "program" in this manual, there are cases where only the prescription unit is included, when only the control formula unit is included, or when both of these are included. The RAM 121b is a memory area (work area) configured to temporarily hold programs, data, and the like read by the CPU 121a.

The I/O port 121d is connected to the aforementioned MFC 241, valve 243, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, driving mechanism 267, microwave generator 655, and the like.

The CPU 121a is configured to read a control program from the storage device 121c and execute it, and read the prescription from the storage device 121c in accordance with the input of an operation command from the input/output device 122 or the like. The CPU121a is configured to control the flow adjustment operation of various gases (cooling gas) by the MFC241, the opening and closing operation of the valve 243, and the APC valve 244 by the pressure sensor 245 in accordance with the contents of the read prescription. The pressure adjustment action of the vacuum pump 246, the start and stop of the vacuum pump 246, the output adjustment action of the microwave generator 655 according to the temperature sensor 263, the flow adjustment action of the MFC241 according to the temperature sensor 263 and the output adjustment action of the microwave generator 655, The rotation of the mounting table 210 (or the wafer boat 217) by the driving mechanism 267, the rotation speed adjustment action, or the lifting action, etc.

The controller 121 can be installed by the above-mentioned program stored in an external memory device (for example, a hard disk such as a disk, a CD such as an optical disk, an MO such as an optical disk, a USB memory, and other semiconductor memory) 123 Constructed on a computer. The storage device 121c or the external storage device 123 is configured as a computer-readable recording medium. The program stored in the recording medium readable by the computer includes a description related to the control of the output adjustment operation of the microwave generator 655 described in FIGS. 9, 10 and 11. Hereinafter, these collectives are also simply referred to as recording media. When the term "recording media" is used in this specification, there are cases where only the memory device 121c alone is included, when only the external memory device 123 alone is included, or when both of these are included. In addition, the provision of the computer program can also be performed by communication means such as the Internet or a dedicated line without using the external memory device 123.

(2) Substrate processing engineering Next, a substrate processing method using the processing furnace of the substrate processing apparatus 100 will be described. The substrate processing method described here is based on the processing flow shown in FIG. 7 to describe one of the processes of manufacturing a semiconductor device (device) in a processing furnace using the above-mentioned substrate processing apparatus 100, for example, as being formed on a substrate An example of the modification (crystallization) process of an amorphous silicon film containing a silicon film. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 121.

Here, when the term "wafer" is used in this specification, it means a wafer itself, or a laminate of a wafer and a predetermined layer or film formed on the surface of the wafer. When the term "surface of the wafer" is used in this specification, it means the surface of the wafer itself, or it means that it is formed on the surface of a predetermined layer or the like on the wafer. In this specification, when it says "form a predetermined layer on a wafer", it means that a predetermined layer is formed directly on the surface of the wafer itself, or it means that a predetermined layer is formed on a layer or the like formed on the wafer. Layer time. When the term "substrate" is used in this manual, it is also synonymous with the term "wafer".

(Board Import Project (S401)) As shown in FIG. 1, once a predetermined number of wafers 200 are transferred to the wafer boat 217, the drive mechanism 267 moves the wafer boat 217 into the processing chamber 201 inside the reaction tube 103 by raising the mounting table 210 (Wafer loading) (S401).

(Furnace pressure (S402)) Once the loading of the wafer boat 217 into the processing chamber 201 is completed, the atmosphere in the processing chamber 201 is controlled so that the pressure in the processing chamber 201 becomes a predetermined pressure (for example, 10 to 102000 Pa). Specifically, while exhaust is exhausted by the vacuum pump 246, the valve opening of the pressure regulator 244 is feedback-controlled based on the pressure information detected by the pressure sensor 245 to set the inside of the processing chamber 201 to a predetermined pressure .

(Inert Gas Supply Project (S403)) Once the pressure in the processing chamber 201 is controlled to a predetermined value by the furnace pressure S402, the drive mechanism 267 rotates the shaft 255 and rotates the wafer 200 via the wafer boat 217 on the mounting table 210. At this time, inert gas such as nitrogen gas is supplied through the gas supply pipe 232 (S403). At this time, the pressure in the processing chamber 201 is a predetermined value in the range of 10 Pa or more and 102000 Pa or less, and is adjusted to, for example, 101,300 Pa or more and 101650 Pa or less. In addition, the shaft may be rotated during the substrate loading process S401, that is, after the wafer 200 has been loaded into the processing chamber 201. In addition, this process can also be implemented simultaneously with furnace pressure S402 as a furnace pressure adjustment method.

(Upgrading Project (S404)) Once the inside of the processing chamber 201 is maintained at a predetermined pressure, the microwave generator 655 supplies microwaves into the processing chamber 201 via the above-mentioned parts. When microwaves are supplied into the processing chamber 201, the wafer 200 is heated to a temperature above 100°C and below 1000°C. It is suitable to be heated to a temperature above 400°C and below 900°C, and it is more suitable to be heated to a temperature above 500°C and 700°C. Temperature below ℃. By processing the substrate at such a temperature, the wafer 200 will be processed at a temperature that efficiently absorbs microwaves, and the speed of the modification processing can be increased. In other words, if the wafer 200 is processed at a temperature lower than 100° C. or a temperature higher than 1000° C., the surface of the wafer 200 is deteriorated and it is difficult to absorb microwaves, so it is difficult to heat the wafer 200. Therefore, it is better to perform substrate processing in the above-mentioned temperature range. In order to maintain such a temperature range for substrate processing, it is desirable to perform a cooling process in the reforming process (annealing process).

For example, in this embodiment where heating is performed by the heating method using electromagnetic waves, a standing wave is generated in the processing chamber 201, and a localized portion is generated on the wafer 200 (when the heating plate is placed, the heating plate is the same as the wafer 200). In order to suppress the deformation of the wafer 200 (the heating plate is the same as the wafer 200 when the heating plate is placed, the heating plate is also the same as the wafer 200) in the heating concentrated area (hot spot) where the ground is heated and the other unheated area (non-heating area). By controlling the ON/OFF of the power supply of the electromagnetic wave supply unit, the generation of hot spots on the wafer 200 is suppressed.

In the present embodiment, in order to prevent the wafer 200 from warping, particularly at the time of the temperature rise of the wafer 200 at the initial stage of microwave irradiation, the following 1) or 2), or a combination of 1) and 2) is implemented.

1) Start supplying microwaves to the wafer 200 from the microwave generator 655, and supply cooling gas to the reaction chamber 201 from the gas inlet 222 of the gas supply part, and measure the center of the wafer 200 by the temperature sensors 263a and 263b The temperature of the part and the edge part. When the temperature of the edge portion of the wafer 200 is higher than that of the center portion of the wafer 200, the temperature of the edge portion of the wafer 200 is lowered, (1) the gas introduction port 222 of the gas supply portion is supplied to the reaction chamber The supply flow rate of the cooling gas in 201 is increased, and (II) the electromagnetic field intensity for the wafer 200 becomes a predetermined electromagnetic field intensity (in a manner that the electromagnetic field intensity at the edge of the wafer 200 becomes weaker), and the microwaves from the plural numbers are stopped. Generators (1st microwave generator 655-1, 2nd microwave generator 655-2, 3rd microwave generator 655-3, 4th microwave generator 655-4, 5th microwave generator 655-5, 6th Microwave generator 655-6) generates microwaves from at least one of the microwave generators.

2) Start supplying microwaves to the wafer 200 from the microwave generator 655, and supply cooling gas to the reaction chamber 201 from the gas inlet 222 of the gas supply part, and measure the center of the wafer 200 by the temperature sensors 263a and 263b The temperature of the part and the edge part. When the temperature of the center part of the wafer 200 is higher than the edge part of the wafer 200, the temperature of the center part of the wafer 200 is lowered, (1) the gas introduction port 222 of the gas supply part is supplied to the reaction chamber The supply flow rate of the cooling gas in 201 is reduced or even lowered, and (II) the electromagnetic field intensity to the wafer 200 becomes a predetermined electromagnetic field intensity (in a manner that the electromagnetic field intensity at the center of the wafer 200 becomes weaker), and the electromagnetic field intensity is stopped from the plural numbers. Microwave generators (first microwave generator 655-1, second microwave generator 655-2, third microwave generator 655-3, fourth microwave generator 655-4, fifth microwave generator 655-5, The sixth microwave generator 655-6) generates microwaves by at least one of the microwave generators.

That is, in the reforming process (S404), the temperature of the wafer 200 (the heat insulating plate 101a or the heating plate 1011a) is measured by the temperature sensors 263a and 263b. As a result of the measurement, when the temperature of the edge portion of the wafer 200 is higher than the temperature of the center portion of the wafer 200, _{the supply flow rate of the cooling gas (for example, N 2} gas) supplied from the gas supply portion is adjusted (the supply flow rate is increased), and While maintaining the total output of microwaves from the plurality of microwave generators at a predetermined output value in such a way that the temperature of the edge portion of the substrate 200 is lowered, the plurality of microwave generators (the first microwave generator 655-1, the first microwave generator 655-1) are stopped. 2) At least one of the microwave generator 655-2, the third microwave generator 655-3, the fourth microwave generator 655-4, the fifth microwave generator 655-5, and the sixth microwave generator 655-6) , Supply microwaves to the wafer 200. For example, the fifth microwave generator 655-5 is stopped, and the first microwave generator 655-1, the second microwave generator 655-2, the third microwave generator 655-3, the fourth microwave generator 655-4, and the , The sixth microwave generator 655-6 supplies microwaves to the wafer 200.

In addition, in the upgrading process, the temperature of the wafer 200 (the heat shield 101a or the heating plate 1011a) is measured by the temperature sensors 263a and 263b. When the temperature of the wafer portion is high, adjust the supply flow rate of the cooling gas (for example, N ₂ gas) supplied from the gas supply portion (reduce the supply flow rate), and reduce the temperature of the center portion of the wafer 200 while reducing the microwave The total output of the microwaves of the generator is maintained at a predetermined output value, while stopping the plural microwave generators (the first microwave generator 655-1, the second microwave generator 655-2, the third microwave generator 655-3, and the At least one of the fourth microwave generator 655-4, the fifth microwave generator 655-5, and the sixth microwave generator 655-6) supplies microwaves to the wafer 200. For example, the second microwave generator 655-2 is stopped, and the first microwave generator 655-1, the third microwave generator 655-3, the fourth microwave generator 655-4, the fifth microwave generator 655-5, and the 6 The microwave generator 655-6 supplies microwaves to the wafer 200.

Thereby, the warpage of the wafer 200 generated in the initial stage of microwave irradiation can be prevented, and the temperature in the surface of the wafer 200 can be made uniform, so that uniform substrate processing can be performed.

By controlling the microwave generator 655 as described above, the wafer 200 is heated, and the amorphous silicon film formed on the surface of the wafer 200 is modified (crystallized) into a polysilicon film. That is, the wafer 200 can be uniformly modified.

In addition, when the measured temperature of the wafer 200 exceeds the above-mentioned critical value and becomes higher or lower, the microwave generator 655 may not be turned off, but the output of the microwave generator 655 may be controlled to reduce the output of the wafer 200. The temperature becomes the temperature in the predetermined range. In this case, it is controlled to increase the output of the microwave generator 655 once the temperature of the wafer 200 returns to a temperature within a predetermined range.

When the predetermined processing time has elapsed, the rotation of the wafer boat 217, the supply of gas, the supply of microwaves, and the exhaust of the exhaust pipe are stopped. Then, until the temperature of the wafer 200 reaches a predetermined temperature, the wafer 200 is cooled.

(Move out project (S405)) After returning the pressure in the processing chamber 201 to the atmospheric pressure, the driving mechanism 267 lowers the mounting table 210, thereby forming an opening in the furnace mouth, and carrying out the wafer boat 217 to the transport space 203 (wafer boat unloading). Then, the wafer 200 placed on the wafer boat is carried out to a transfer chamber located outside the transfer space 23 (S405).

By repeating the above operations, the processed wafer 200 is modified.

(3) Temperature control method Hereinafter, the temperature control method of the upgrading process S404 will be explained using the drawings. In the following description, the output (POWER) of the microwave generator 655 means the input power of microwaves irradiated into the processing box 102 or the processing chamber 201. In addition, as shown in FIGS. 1 and 3, when plural microwave generators 655-1 to 655-6 are provided, the output of the microwave generator 655 means that the output of the microwave generator 655 is from the plural microwave generators 655 when there is no special description. The total output of each microwave irradiated from -1 to 655-6. Example 1

The first embodiment will be described with reference to FIG. 8. In Example 1, it is explained that during the heating period of the reforming process (S404), the change of the electromagnetic field distribution by the optimization of the irradiation position of the microwaves from the plural microwave generators 655-1 to 665-6 is used to reduce crystals. A configuration example of the amount of curvature of the circle 200.

FIG. 9 is the same as FIG. 8 and representatively exemplifies a substrate import process (S401), an inert gas supply process (S403), a modification process (S404), and a substrate export process (S405) as a substrate processing process. In addition, the reforming process (S404) is divided into a heating period, a reforming period, and a cooling period, for example.

The output (POWER) of the microwave generator 655 supplied into the reaction chamber 201 is set to 10kW during the heating period and during the reforming process (S404), and the other substrate loading process (S401), inert gas During the cooling period of the supply process (S403) and the upgrading process (S404), and the substrate removal process (S405), the output (POWER) of the microwave generator 655 is 0 kW.

During the heating period of the upgrading process (S404), among the multiple microwave generators 655-1 to 655-6, the generation of microwaves from one microwave generator 655-5 will be stopped (0kW), and the remaining Five microwave generators (655-1, 655-2, 655-3, 655-4, 655-6) generate microwaves. The microwave generators (655-1, 655-2, 655-3, 655-4, and 655-6) each generate 2 kW of microwaves, and their total output (POWER) is 10 kW.

On the other hand, during the reforming period of the reforming process (S404), among the plurality of microwave generators 655-1 to 655-6, the generation of microwaves from one microwave generator 655-6 will be stopped (0kW) , Generate microwaves from the remaining 5 microwave generators (655-1, 655-2, 655-3, 655-4, 655-5). The microwave generators (655-1, 655-2, 655-3, 655-4, and 655-5) each generate 2 kW of microwaves, and their total output (POWER) is 10 kW.

By optimizing the microwave irradiation position during the heating period of the reforming process (S404), the electromagnetic field distribution in the reaction chamber 201 is appropriately changed, and the warpage of the wafer 200 during the heating period of the reforming process (S404) can be reduced. quantity. In this way, the in-plane temperature of the wafer 200 can be made uniform, so that uniform substrate processing can be performed. Example 2

The second embodiment will be described with reference to FIG. 9. In the second embodiment, during the heating period of the reforming process (S404), the cooling gas (N2 gas The supply of) and the change of the electromagnetic field distribution optimized by the irradiation position of the microwaves from the plural microwave generators 655-1 to 665-6.

As shown in Fig. 9, during the heating period of the reforming process (S404), the supply flow rate of the inert gas is set to 30 slm, the rotation speed of the wafer 200 is set to 5.0 rpm, and the multiple microwave generators 655-1~ Among 655-6, the generation of microwaves from one microwave generator 655-5 will be stopped (0kW), and the remaining five microwave generators (655-1, 655-2, 655-3, 655- 4. 655-6) Generate microwaves.

On the other hand, during the reforming period of the reforming process (S404), the supply flow rate of the inert gas is set to 5 slm, the rotation speed of the wafer 200 is set to 2.5 rpm, and the multiple microwave generators 655-1 to 655- Among 6, the generation of microwaves from one microwave generator 655-6 will be stopped (0kW), and the remaining five microwave generators (655-1, 655-2, 655-3, 655-4, 655-5) Generate microwaves. Example 3

The third embodiment will be described with reference to FIG. 10. Fig. 10 shows the control flow in the upgrading process (S404). Once the control process is started (start), the supply of microwaves into the reaction chamber 201 and the supply of cooling gas from the gas inlet 222 into the reaction chamber 201 are started (S90). Microwaves are generated (ON) from the microwave generators 655-1 to 655-5, and the microwave generator 655-6 is stopped. At this time, the supply flow rate of the inert gas as the cooling gas is 30 slm, and the rotation speed of the wafer 200 is 5.0 rpm.

Next, the temperature (Tc) of the center portion of the heating plate 1011a and the temperature (Te) of the edge portion of the heating plate 1011a will be detected by the temperature sensors 263a, 263b as described in FIG. 2(C) ( S91).

After S91, it is judged whether the temperature (Tc) of the center part of the heating plate 1011a is lower than the temperature (Te) of the edge part of the heating plate 1011a (Tc<Te) (S92). When the temperature (Tc) of the center part of the heating plate 1011a is lower than the temperature (Te) of the edge part of the heating plate 1011a (Tc<Te) (Y), it moves to S93. On the other hand, when the temperature (Tc) of the center part of the heating plate 1011a is higher than the temperature (Te) of the edge part of the heating plate 1011a (Tc>Te) (N), the process proceeds to S94.

In S93, since the temperature (Tc) of the central part of the heating plate 1011a is lower than the temperature (Te) of the edge part of the heating plate 1011a (Tc<Te), it can also be imagined that the temperature of the central part of the wafer 200 is higher than that of the wafer 200. The temperature of the edge is low. Furthermore, it is conceivable that the electric field intensity at the center of the wafer 200 is weaker than the electric field intensity at the edge of the wafer 200. Therefore, it is necessary to cool the edge of the wafer 200 more to make the in-plane temperature of the wafer 200 uniform. In addition, it is also necessary to control the electric field intensity at the center of the wafer 200 to be stronger than the electric field intensity at the edge of the wafer 200. Therefore, the cooling gas supply flow rate is adjusted (increased), for example, the fifth microwave generator 655-5 is stopped, and the sixth microwave generator 655-6 is activated (ON) (655-1 to 655-4, 655-6: ON).

On the other hand, in S94, since the temperature (Tc) of the central part of the heating plate 1011a is higher than the temperature (Te) of the edge part of the heating plate 1011a (Tc>Te), the temperature of the central part of the wafer 200 can also be imagined. The temperature is higher than that of the edge of the wafer 200. Furthermore, it is conceivable that the electric field intensity at the center of the wafer 200 is stronger than the electric field intensity at the edge of the wafer 200. Therefore, it is necessary to reduce the cooling of the edge portion of the wafer 200 to make the in-plane temperature of the wafer 200 uniform. In addition, it is also necessary to control the electric field intensity at the center of the wafer 200 to be weaker than the electric field intensity at the edge of the wafer 200. Therefore, the cooling gas supply flow rate is adjusted (reduced), for example, the second microwave generator 655-2 is stopped, and the sixth microwave generator 655-6 is activated (ON) (655-1, 655-3 to 655-6: ON).

Next, the temperature (Tc) of the central portion of the heating plate 1011a is detected, and it is determined whether the detected temperature is within the optimum temperature range of the wafer 200 during the reforming period (Ta1<Tc<Ta2) (S95). If the temperature (Tc) of the center portion of the heating plate 1011a is within the optimum temperature range of the wafer 200 during the reforming period (Ta1<Tc<Ta2) (Y), the process proceeds to S96. On the other hand, if the temperature (Tc) of the central part of the heating plate 1011a is not within the optimum temperature range of the wafer 200 during the reforming period (Ta1<Tc<Ta2) (N), the process moves to S91 again, and the implementation is repeated S92, S93, S94 and S95.

In S96, it is determined whether the preset processing time has elapsed, and if the preset processing time (Y) has elapsed, the control flow of the upgrading process of FIG. 11 ends. On the other hand, if the preset processing time (N) has not elapsed, the process moves to S91 again, and S92, S93, S94, S95, and S96 are repeated.

As described above, in the reforming process (S404), the reaction chamber is adapted to adjust the supply flow rate of the cooling gas according to the measured temperature at the edge and center of the wafer 200 and to optimize the position by the microwave irradiation. The electromagnetic field distribution in 201 can reduce the bending amount of wafer 200 in the modification process (S404). Thereby, the in-plane temperature of the wafer 200 can be made uniform, and uniform substrate processing can be performed.

(Experimental example and investigation example) Fig. 11 is a diagram showing an example of temperature transitions of the substrate and the heat insulating plate when microwaves are irradiated. A silicon substrate with a diameter of 300 mm doped with phosphorus is used as the substrate (hereinafter also referred to as wafer 200), a silicon substrate with a diameter of 300 mm is used as a heating plate 1011a, and transparent quartz is used as a heat shield 101a. The temperature of the wafer 200 and the heat insulating plate 101a changes in seconds.

FIG. 11 shows that the temperature of the wafer 200 and the heat insulating plate 101a is measured at the center. As shown in FIG. 11, even in the wafer 200 without a laminated film, when microwaves are irradiated, it is heated to a predetermined temperature.

If the substrate processing is performed with a microwave output of 10 kW, it takes about 120 seconds until the temperature of the wafer 200 stabilizes, and then the temperature of the wafer 200 stabilizes at around 800°C.

The transparent quartz heat insulation board 101a is not easy to act on microwaves. It is heated by the radiation from the heating plate 1011a. Therefore, the temperature of the heat insulation board 101a reaches 350°C in 300 seconds, but it is for the stability of the temperature of the heat insulation board 101a. , It will take a little longer.

At the initial stage of microwave irradiation (30 seconds) when the temperature of the wafer 200 rises, the wafer 200 is warped. In the temperature stable region (150 seconds) where the temperature of the wafer 200 is around 800°C, the warpage of the wafer 200 is reduced. This is almost the same as before the microwave irradiation (0 seconds).

The bending of the wafer 200 occurs about 60 seconds from the start of the microwave irradiation, and then the bending amount becomes smaller.

In this way, when a predetermined high microwave output (POWER) is irradiated to the wafer 200, the wafer 200 is warped at the initial stage (30 seconds) of the microwave irradiation in which the substrate temperature of the wafer 200 rises. This tendency is the same when there is a material or film that easily affects microwaves on the wafer 200. However, in this case, only the part where the material or film is likely to act on microwaves, the temperature of the material or film is higher than that of the wafer 200, and the desired temperature can be easily obtained even with a low microwave output (POWER).

FIG. 12 is a graph showing the temperature dependence of the microwave absorptivity and the microwave reflectivity of a silicon substrate. The microwave absorptivity and reflectivity are measured according to the free space method. The microwave is the case of measuring the frequency of 8.2 GHz and the frequency of 12.4 GHz.

The absorptivity of wafer 200 with frequencies of 8.2GHz and 12.4GHz is above 40% near room temperature, but as the temperature of wafer 200 becomes higher, the absorptivity decreases, and the temperature of wafer 200 is higher than 600°C. The absorption rate is about 13%.

The reflectance is about 20-50% in the low temperature region (room temperature to 200°C), but it becomes about 80% when the temperature of the wafer 200 is 400°C or higher.

The temperature of the wafer 200 at the initial stage (30 seconds) of microwave irradiation in which the temperature of the wafer 200 rises is from room temperature to about 400° C. at which the microwave is easily absorbed.

The temperature at the center of the wafer 200 during the 60 seconds from the start of the microwave irradiation caused by the bending of the wafer 200 is about 25°C to 740°C. The temperature rise process of the wafer 200 also includes 25°C to 400°C, which is easy to absorb microwaves. ℃ temperature band.

Generally, if the temperature difference between the temperature Tc of the center portion of the wafer 200 and the temperature Te of the outer peripheral portion (edge portion) of the wafer 200 is "the temperature Tc of the center portion <the temperature Te of the outer peripheral portion", the wafer 200 is bent into Saddle type. In addition, if the temperature difference of the wafer 200 is "the temperature Tc of the center part>the temperature Te of the outer peripheral part", the wafer 200 is bent into a dome shape. As far as the wafer 200 is bent from 5 mm to 10 mm, when the temperature of the wafer 200 is about 300° C. to 500° C., the temperature difference within the surface of the wafer 200 is about 45° C. to 85° C.

Considering the above, the structure in which the wafer 200 is warped can be thought of as follows.

When microwaves are irradiated with a relatively high output of 10 kW, the temperature range of the wafer 200 when the temperature rises from the start of the microwave output irradiation to 60 seconds is a temperature range in which the wafer 200 is more likely to absorb microwaves. Therefore, even if there is a slight uneven irradiation of the microwave, the temperature difference in the surface of the wafer 200 is likely to increase.

The temperature distribution of the wafer 200 is the temperature difference between the temperature Tc at the center of the wafer 200 and the temperature Te at the outer periphery (edge) of the wafer 200, which is "the temperature at the center Tc<the temperature Te at the outer periphery". The difference is about 45°C to 85°C. It is conceivable that the wafer 200 is bent into a saddle shape. Once the in-plane temperature difference of the wafer 200 becomes larger, the wafer 200 will bend more. Therefore, there is a risk of the wafer 200 colliding with the heating plate 1011a.

The processed sample shown in FIG. 13 has: a silicon (Si) substrate (Si-Sub), a thermal oxide film SiO ₂ formed on the Si substrate, and a phosphorus-containing silicon film formed on the thermal oxide film SiO ₂ (P-doped Si film). The film thickness of the thermal oxide film SiO _{2 is about 1000 Å.} This thermal oxide film SiO ₂ is, for example, a Si oxide film formed by diffusing oxygen O on the surface of a Si substrate in a 900° C. oxygen environment in a vertical substrate processing apparatus equipped with a resistance heating heater. The thickness of the P-doped Si film is about 3000 Å, and the phosphorus (P) concentration is 1e ²¹ atoms/cm ³ . This P-doped Si film is used, for example, in a vertical substrate processing apparatus equipped with a resistance heating heater. SiH ₄ (Silane: Monosilane) and PH ₃ (Trihydrogen Phosphorus: Phosphine), which is deposited and formed into a film on a substrate that has been transported and fixed in the reaction chamber in advance.

Once the processed sample of FIG. 13 is irradiated with microwaves, the amorphous P-doped Si film crystallizes. However, if the microwave irradiation time is lost halfway, uneven processing will occur. This is because the processing time of the microwave processor is not sufficient, so there are areas where the crystallization and the crystallization are insufficient, and processing unevenness appears as concentric interference fringes.

Once the microwave is irradiated into the reaction chamber 201, the frequency of the microwave generator, the size of the reaction chamber 201, and the materials in the reaction chamber 201 (wafer 200, heating plate 1011a, heat shield 101a, etc.) are inherent parameters. The electromagnetic field distribution will be formed in the reaction chamber 201. This electromagnetic field distribution also depends on the temperature of the material.

In the presence of such an electromagnetic field distribution, since the wafer 200 is rotating, the strength of the electromagnetic field appears on the wafer 200 in a pattern of 4 to 5 concentric circles. Although only a specific place is heated by the irradiation of microwaves, when a sufficient processing time can be ensured for a long time, the heat is conducted to the entire wafer 200 and the crystallization is completed in the entire wafer 200.

In other words, it means that if the processing time is not sufficient, what kind of electromagnetic field distribution becomes from the processing unevenness, forming a clue for verification.

This treatment unevenness can be quantified by measuring the sheet resistance value (Rs). The sheet resistance value (Rs) measured by the four-probe method is one of the quantities representing the electrical resistance of a thin film or thin-film material having the same thickness, and represents the difficulty of electrical passage of the material or material. If it is crystallized and activated, electricity is easy to flow, so the sheet resistance value (Rs) becomes small, and if it is amorphous, it becomes large. It is known that the amorphous P-Doped Si film is crystallized and activated at around 550°C or higher by thermal annealing. Therefore, by obtaining map data of the sheet resistance (Rs) of the entire wafer 200 of the amorphous P-Doped Si film, the electromagnetic field distribution in the reaction chamber 201 at around 550° C. can be grasped.

FIG. 14 is a graph showing the dependence of the in-plane distribution of the sheet resistance value (Rs) on the position of the microwave irradiation port. If microwave irradiation (4kW, 300 seconds, +9kW, 45 seconds) to the wafer 200 containing the amorphous P-Doped Si film of the structure of FIG. 13, the amorphous P-Doped Si film will partially crystallize. However, uneven treatment occurs.

The microwave irradiation port of the reaction chamber 201 is formed as shown in FIG. 3, but the irradiation position of the microwave irradiation port is changed, and the in-plane distribution of the sheet resistance value (Rs) when the amorphous P-Doped Si film is processed is As shown in the MAP part of Figure 14, they are different.

For example, when the microwave generator 655-2 is set to OFF and the microwave generators 655-1, 655-3 to 655-6 are used, the in-plane distribution of the sheet resistance (Rs) of the wafer 200 is that of the wafer 200 The sheet resistance (Rs) near the center tends to be high. This can be considered because the electromagnetic field distribution near the center of the wafer 200 is weak. The irradiation positions of the irradiation ports of the microwave generator 655 in this case are 653-1, 653-3, 653-4, 653-5, and 653-6 in FIG. 3. S94 in FIG. 10 is a person who uses this configuration.

Similarly, for example, when the microwave generator 655-5 is turned off and the microwave generators 655-1 to 655-4 and 655-6 are used, the in-plane distribution of the sheet resistance value (Rs) of the wafer 200 is that there is a wafer The sheet resistance value (Rs) in the vicinity of the outer circumference (edge) of 200 tends to be high. This can be considered because the electromagnetic field distribution at the outer periphery of the wafer 200 is weak. The irradiation positions of the irradiation ports of the microwave generator 655 in this case are 653-1, 653-2, 653-3, 653-4, and 653-6 in FIG. 3. S93 in Fig. 10 uses this configuration.

Similarly, for example, when the microwave generator 655-6 is turned off and the microwave generators 655-1 to 655-5 are used, the in-plane distribution of the sheet resistance (Rs) of the wafer 200 is approximately uniform in the in-plane It can be considered that the electromagnetic field distribution in the plane of the wafer 200 is approximately uniform. The irradiation positions of the irradiation ports of the microwave generator 655 in this case are 653-1, 653-2, 653-3, 653-4, and 653-5 in FIG. 3. The heating period and the reforming period of the reforming process (S404) in FIG. 7 are those using this configuration. (4) Effects according to this embodiment According to this embodiment, one or more effects shown below can be obtained.

1) Install a gas inlet at a position where the cooling gas can be introduced from the upper part of the reaction chamber to the edge of the substrate, and set an exhaust port at a position where the cooling gas can be discharged from the lower part of the reaction chamber, and supply the cooling gas to the edge to make the edge The temperature of the part is lower than that of the center part of the substrate. Thereby, the in-plane temperature of the substrate can be made uniform, so that uniform substrate processing can be performed.

2) Installation: multiple microwave generators that generate microwaves, and multiple microwave irradiation ports that irradiate the microwaves generated by the microwave generators to the substrate, so that the electromagnetic field intensity in the substrate is higher in the center than at the edges. Any one of the plural microwave generators is turned off, and the position of the microwave irradiation port is changed. Thereby, the in-plane temperature of the substrate can be made uniform, so that uniform substrate processing can be performed.

3) By combining the above 1) and the above 2), it is possible to prevent the bending of the substrate at the initial stage of microwave irradiation, and to make the temperature in the surface of the substrate uniform.

4) Start the supply of microwaves to the substrate and start the supply of cooling gas, measure the temperature of the center and the edge of the substrate, and when the temperature of the flow edge is higher than that of the center, the temperature of the edge becomes lower, ( I) increase the supply flow rate of the cooling gas, and (II) stop at least one of the plurality of microwave generators so that the electromagnetic field intensity of the substrate becomes a predetermined electromagnetic field intensity.

5) Also, start the supply of microwaves to the substrate, and start the supply of cooling gas, measure the temperature of the center and the edge of the substrate, and when the temperature of the center is higher than the edge, the temperature of the center will be lowered. (I) Decrease the supply flow rate of the cooling gas, and (II) stop at least one of the plurality of microwave generators so that the electromagnetic field intensity of the substrate becomes a predetermined electromagnetic field intensity.

6) By combining the above 4) and the above 5), it is possible to prevent the substrate from being warped in the initial stage of microwave irradiation, and to make the temperature in the surface of the substrate uniform. Thereby, uniform substrate processing can be performed.

<Other embodiments of the present invention> The substrate processing apparatus according to another embodiment of the present invention will be described with reference to FIG. 15. The substrate processing apparatus 100a shown in FIG. 15 is different from the substrate processing apparatus 100 shown in FIG. The point of the gas introduction port 222a and the point where the exhaust port 221 is provided so as to surround the mounting table 210. The other configuration is the same as that of FIG. 1, so the description is omitted.

The gas introduction port 222a is similar to the gas introduction port 222, and is provided at the upper portion of the edge portion of the wafer 200 corresponding to the flange cover 104 so that cooling gas can be supplied to the edge portion of the wafer 200. The cooling gas supplied into the reaction chamber 201 from the gas inlets 222 and 222a provided in the upper part of the reaction chamber 201 passes through the edge of the wafer 200 and its vicinity, and from the exhaust port provided so as to surround the mounting table 210 221 is discharged to the exhaust pipe 231 through the inside of the conveying space 203.

Thereby, even if the supply flow rate of the cooling gas supplied from the gas introduction ports 222 and 222a is increased, it can be quickly discharged from the exhaust port 221 provided so as to surround the mounting table 210.

As shown in FIG. 16, this embodiment is configured as a so-called vertical batch type substrate processing apparatus, which can hold a plurality of substrates in a vertical direction in multiple stages. In the wafer boat 217, a plurality of wafers 200 held in the vertical direction in multiple stages to be processed are placed in the vertical direction of the wafer 200 by sandwiching the plurality of wafers 200 as heat insulation. The quartz plates 101a, 101b, and the heating plates 1011a, 1011b of the plate are held at predetermined intervals. FIG. 16 is a configuration example in which the quartz plate 101c is not provided between the plurality of wafers 200. As shown in FIG. The other structure is the same as that of FIG. 1, and the description is omitted. The wafer 200 held in the wafer boat 217 is described as three wafers, but it is not limited to this. For example, a large number of wafers 200 such as 25 wafers or 50 wafers may be processed.

As mentioned above, the present invention has been explained based on the embodiments, but the above-mentioned embodiments or modifications can be appropriately combined and used, and the effects can also be obtained.

For example, in each of the above-mentioned embodiments, the process of modifying an amorphous silicon film into a polycrystalline silicon film as a film mainly composed of silicon is described, but it is not limited to this, and the supply may contain oxygen (O) and nitrogen ( At least one or more gases among N), carbon (C), and hydrogen (H) modify the film formed on the surface of the wafer 200. For example, when forming a hafnium oxide film (HfxOy film) as a high-dielectric film on the wafer 200, supplying a gas containing oxygen and heating while supplying microwaves can supplement the lack of oxygen in the hafnium oxide film. Improve the characteristics of the high-dielectric film.

In addition, the hafnium oxide film is shown here, but it is not limited to this. It contains aluminum (Al), titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), lanthanum (La), and cerium ( An oxide film of at least any one of metal elements such as Ce), yttrium (Y), barium (Ba), strontium (Sr), calcium (Ca), lead (Pb), molybdenum (Mo), tungsten (W), etc., also That is, it can also be applied to the case of a modified metal-based oxide film. That is, the above-mentioned film formation sequence is to modify the TiOCN film, the TiOC film, the TiON film, the TiO film, the ZrOCN film, the ZrOC film, the ZrON film, the ZrO film, the HfOCN film, the HfOC film, the HfON film, on the wafer 200. HfO film, TaOCN film, TaOC film, TaON film, TaO film, NbOCN film, NbOC film, NbON film, NbO film, AlOCN film, AlOC film, AlON film, AlO film, MoOCN film, MoOC film, MoON film, MoO film , WOCN film, WOC film, WON film, WO film is also applicable.

In addition, the film is not limited to a high-dielectric film, and a film containing silicon as a main component doped with impurities may be heated. Films with silicon as the main component include silicon nitride film (SiN film), silicon oxide film (SiO film), silicon oxycarbide film (SiOC film), silicon oxycarbonitride film (SiOCN film), and silicon oxynitride film. (SiON film) and other Si-based oxide films. The impurity includes, for example, at least one of boron (B), carbon (C), nitrogen (N), aluminum (Al), phosphorus (P), gallium (Ga), arsenic (As), and the like.

In addition, at least any one of polymethyl methacrylate (PMMA), epoxy resin, phenol resin, polyvinyl phenyl resin, and the like may be used as the base resist film.

In addition, the above is a description of one of the processes related to the manufacturing process of semiconductor devices, but it is not limited to this, in the patterning process of the manufacturing process of liquid crystal panels, the patterning process of the manufacturing process of solar cells, or the patterning process of the manufacturing process of power devices. Techniques for processing substrates such as processing are also applicable. [Industrial Utilization Possibility]

As described above, according to the present invention, it is possible to provide an electromagnetic wave heat treatment technology that can suppress the deformation or damage of the substrate and perform uniform substrate processing.

101a, 101b‧‧‧Quartz plate (quartz plate) 121‧‧‧Controller (control part) 200‧‧‧wafer (substrate) 201‧‧‧Processing room 221‧‧‧Exhaust port 222‧‧‧Gas inlet 263‧‧‧Temperature sensor 655‧‧‧Microwave Generator

FIG. 1 is a schematic configuration diagram of a single-wafer type processing furnace of a substrate processing apparatus to which an embodiment of the present invention is applied, and is a diagram showing a portion of the processing furnace in a vertical cross-sectional view. 2 is a diagram showing a temperature measurement method of a substrate processing apparatus applied to an embodiment of the present invention, and a diagram when the temperature of a hot plate is measured. 3 is a diagram showing a configuration example of an electromagnetic wave supply unit when six electromagnetic wave introduction ports are provided in a processing box in the substrate processing apparatus of FIG. 1. Fig. 4 is a top view of the processing box of Fig. 3. Fig. 5 is a side view of the processing box of Fig. 3. Fig. 6 is a schematic configuration diagram of a controller of a substrate processing apparatus to which the present invention is applied. Fig. 7 is a diagram showing a flow of substrate processing of the present invention. FIG. 8 is a diagram of an example of a temperature control method of Embodiment 1 of a substrate processing apparatus applied to an embodiment of the present invention. FIG. 9 is a diagram of an example of a temperature control method of Embodiment 2 of a substrate processing apparatus applied to an embodiment of the present invention. FIG. 10 is a diagram for explaining the control flow of Embodiment 3 of the substrate processing apparatus applied to one embodiment of the present invention. Fig. 11 is a diagram showing an example of temperature transitions of the substrate and the heat insulating plate when microwaves are irradiated used in an embodiment of the present invention. Fig. 12 is a graph showing the temperature dependence of the microwave absorptivity and the microwave reflectivity of a substrate used in an embodiment of the present invention. Fig. 13 is a cross-sectional view of a processed sample used in an embodiment of the present invention. Fig. 14 is a graph showing the dependence of the in-plane distribution of the sheet resistance value of the processed sample used in one embodiment of the present invention on the position of the microwave irradiation port. 15 is a schematic configuration diagram of a single wafer type processing furnace of a substrate processing apparatus to which another embodiment of the present invention is applied, and is a diagram showing the processing furnace part in a vertical cross-sectional view. Fig. 16 is a longitudinal sectional view showing a processing furnace portion of a substrate processing apparatus applied to another embodiment of the present invention.

100‧‧‧Substrate processing equipment

101a, 101b‧‧‧Quartz plate (quartz plate)

102‧‧‧Treatment box

103‧‧‧Reaction tube

104‧‧‧Flange cover

121‧‧‧Controller (control part)

200‧‧‧wafer (substrate)

201‧‧‧Processing room

202‧‧‧Conveyor

203‧‧‧Transportation area

204‧‧‧Spacer

205‧‧‧Gate valve

206‧‧‧PCB loading and unloading exit

210‧‧‧Placement table

212‧‧‧Corrugated pipe

217‧‧‧Crystal Boat

220‧‧‧O-ring

221‧‧‧Exhaust port

222‧‧‧Gas inlet

231‧‧‧Exhaust pipe

232‧‧‧Gas supply pipe

241‧‧‧Mass Flow Controller (MFC)

243‧‧‧valve

244‧‧‧Pressure Regulator

245‧‧‧Pressure sensor

246‧‧‧Vacuum pump

255‧‧‧axis

263a, 263b‧‧‧Temperature sensor

267‧‧‧Drive mechanism

653-1, 653-4‧‧‧Electromagnetic wave inlet

654-1, 654-4‧‧‧ stilling wave tube

655-1, 655-4‧‧‧Microwave generator

1011a, 1011b‧‧‧heating plate

Claims (11)

A substrate processing apparatus is characterized by having: a processing chamber, which processes substrates; a substrate holding part, which holds the aforementioned substrate; a gas introduction part, which introduces cooling gas into the aforementioned processing chamber; and an exhaust part, which The cooling gas exhaust supplied to the processing chamber; a plurality of microwave generators that generate microwaves; a temperature measuring section including: measuring the temperature of the central portion of the substrate held in the substrate holding section A first temperature measuring part, and a second temperature measuring part that measures the temperature of the edge; and a control part, which is configured to control the gas introduction part and the plurality of microwave generators so that in the state where the microwaves are generated, During the temperature rise period of the process of modifying the substrate, the result measured by the temperature measuring unit shows that when the temperature of the edge portion of the substrate is higher than the temperature of the center portion of the substrate, the gas introduced from the gas introduction portion is increased. The supply flow rate of the cooling gas is made so that the electric field intensity at the center of the substrate is stronger than the electric field intensity at the edge of the substrate, the irradiation position of the plurality of microwave generators is changed, and the plurality of microwave generators are stopped. At least one, when the temperature of the center part of the substrate is higher than the temperature of the edge part of the substrate, the supply flow rate of the cooling gas introduced from the gas introduction part is reduced, and the electric field intensity of the edge part of the substrate is formed The electric field intensity is stronger than the central part of the aforementioned substrate, and the aforementioned complex microwave production is changed At the irradiation position of the generator, stop at least one of the aforementioned plural microwave generators. For example, in the substrate processing apparatus of claim 1, wherein the control section is configured to control the plurality of microwave generators so that when the temperature of the edge of the substrate is higher than the temperature of the center of the substrate, The method of weakening the electromagnetic field intensity at the edge of the substrate is to stop at least one of the plurality of microwave generators while maintaining the output from the plurality of microwave generators at a predetermined output value. For example, in the substrate processing apparatus of claim 1, wherein the control unit is configured to control the plurality of microwave generators so that when the temperature of the center portion of the substrate is higher than the temperature of the edge portion of the substrate, The method in which the electromagnetic field intensity at the center portion of the substrate to be measured is weakened is to stop at least one of the plurality of microwave generators while maintaining the output from the plurality of microwave generators at a predetermined output value. As for the substrate processing apparatus of claim 1, wherein the gas introduction part is provided in the upper part of the processing chamber and corresponds to the position of the edge of the substrate held by the substrate holding part. For example, the substrate processing apparatus of the first item of the scope of patent application is provided with a loading and unloading port for loading and unloading the substrate into and out of the processing chamber, and the plurality of microwave generators are installed at the same as the loading and unloading port Opposite the side of the aforementioned processing chamber. A method of manufacturing a semiconductor device is characterized by: a process of carrying a substrate into a processing chamber; a process of irradiating the substrate with microwaves generated by a plurality of microwave generators to heat the substrate; by having: measuring the substrate The first temperature measuring part that holds the temperature of the central part of the substrate in the substrate holding part and the temperature measuring part of the second temperature measuring part that measures the temperature of the edge part measure the temperature of the central part and the edge part of the substrate Process; In the state of the microwave generation, during the temperature rise of the process of modifying the substrate, the result of the temperature measurement of the substrate shows that when the temperature of the edge of the substrate is higher than the temperature of the center of the substrate, increase The supply flow rate of the cooling gas supplied to the edge of the substrate is made so that the electric field intensity at the center of the substrate is stronger than the electric field intensity at the edge of the substrate, and the irradiation positions of the plural microwave generators are changed to make At least one microwave generator among the plurality of microwave generators is stopped, and when the temperature of the center part of the substrate is higher than the temperature of the edge part of the substrate, the cooling gas supplied to the edge part of the substrate is reduced. The flow rate is supplied, and the electric field intensity at the edge of the substrate is made stronger than the electric field intensity at the center of the substrate, and the irradiation position of the plurality of microwave generators is changed so that at least one of the plurality of microwave generators is The microwave generator is stopped, and the process of processing the substrate; and the process of removing the modified substrate from the processing chamber. For example, the method for manufacturing a semiconductor device according to the scope of the patent application, wherein, in the above-mentioned modification process, when the temperature of the edge portion of the substrate is higher than the temperature of the center portion of the substrate, the measured value of the substrate The method of weakening the electromagnetic field intensity at the edge portion stops at least one of the aforementioned plurality of microwave generators while maintaining a predetermined output value. For the method of manufacturing a semiconductor device according to the scope of the patent application, in the above-mentioned modification process, when the temperature of the center part of the substrate is higher than the temperature of the edge part of the substrate, the measured value of the substrate The electromagnetic field intensity in the center part is weakened, and at least one of the above-mentioned plural microwave generators is stopped while maintaining a predetermined output value. A recording medium that records a computer-readable recording medium that uses a computer to execute the following procedures in the program of the aforementioned substrate processing apparatus, and moves the substrate into the processing chamber of the substrate processing apparatus; The process of irradiating the microwave generated by the generator to the substrate to heat the substrate; by including: a first temperature measuring section that measures the temperature of the central portion of the substrate held in the substrate holding section, and measuring the temperature of the edge portion The second temperature measuring part of the temperature measuring part to measure the temperature of the central part and the edge part of the substrate; in the state of the microwave generation, during the heating period of the process of modifying the substrate, the temperature of the substrate is measured As a result, when the aforementioned substrate When the temperature of the edge portion is higher than the temperature of the center portion of the substrate, the supply flow rate of the cooling gas supplied to the edge portion of the substrate is increased, and the electric field intensity of the center portion of the substrate becomes higher than that of the edge portion of the substrate. The intensity is stronger. Change the irradiation position of the plurality of microwave generators to stop at least one of the plurality of microwave generators. When the temperature of the center part of the substrate is higher than the temperature of the edge part of the substrate When it is high, the supply flow rate of the cooling gas supplied to the edge of the substrate is reduced, and the electric field intensity of the edge of the substrate is made stronger than the electric field intensity of the center of the substrate, and the plurality of microwave generators are changed. At the irradiation position, at least one of the microwave generators in the plurality of microwave generators is stopped, and the process of processing the substrate; and the process of removing the modified substrate from the processing chamber. Such as the recording medium of claim 9, wherein in the aforementioned modification procedure, when the temperature of the edge portion of the substrate is higher than the temperature of the center portion of the substrate, the measured value of the edge portion of the substrate The method of weakening the electromagnetic field strength stops at least one of the aforementioned plurality of microwave generators while maintaining a predetermined output value. For example, the recording medium of claim 9, wherein, in the aforementioned modification procedure, when the temperature of the central part of the substrate is higher than the temperature of the edge part of the aforementioned substrate, the measured value of the central part of the substrate The method of weakening the electromagnetic field strength stops at least one of the aforementioned plurality of microwave generators while maintaining a predetermined output value.

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