TWI732010B - Manufacturing method of packaged device wafer - Google Patents

Abstract

[Problem] To provide a method for manufacturing a packaged device chip that allows the remaining mold resin to remain on the side of the packaged device chip. [Solution] A method of manufacturing a packaged device wafer, comprising: a groove forming step of forming a groove along a predetermined dividing line on the front surface of the wafer with the front surface of the device formed thereon; and a package wafer forming step of filling a mold resin In the groove and cover the front surface of the wafer; the outer peripheral edge removal step, along the outer peripheral edge, remove the mold resin and the front side of the wafer to remove 1/3~2/3 of the groove depth to expose the groove; the alignment step is based on the outer peripheral edge The exposed grooves are used to find the position of the dividing grooves; and the dividing step is to form the dividing grooves according to the found positions. Even if the grooves are formed obliquely in the depth direction, the positions of the grooves detected in the calibration step can still be averaged .

Description

Manufacturing method of packaged device wafer Field of invention

The invention relates to a method for manufacturing a packaged device wafer.

Background of the invention

There is known a manufacturing method in which the semiconductor wafer is divided into individual device wafers by irradiation with a cutting knife or laser light. It is a common practice to fix the divided device chips on a motherboard, etc., wire them with wires, etc., and then encapsulate them with a plastic resin. However, due to the minute cracks on the side of the device wafer, if the device is operated for a long time, the cracks may expand and the device may be damaged. Therefore, it has been developed to cover the side of the device wafer with a mold resin to make the outside The environmental factors do not affect the packaged device wafer of the device (see, for example, Patent Document 1).

Prior art literature Patent literature

Patent Document 1: Japanese Patent Laid-Open No. 2002-100709

Summary of the invention

When manufacturing the packaged device wafer shown in Patent Document 1, it is necessary to A groove filled with mold resin is formed on the semiconductor wafer along the planned dividing line. When the groove is formed with a cutting blade, the interval between the grooves may vary in units of μm under the influence of the bending of the cutting blade, the expansion and contraction of the shaft of the cutting device, and the positioning accuracy. In particular, a low-dielectric constant insulator film (Low-k film) is formed on the front surface of a semiconductor wafer, and the low-dielectric constant film is removed by laser ablation. If it is cut along the removed shallow groove, it will Under the influence of the heat of laser ablation, the vicinity of the shallow groove becomes hard, and the bending of the cutter becomes prone to occur.

When manufacturing the packaged device wafer shown in Patent Document 1, if the cutting blade is bent, the groove in the cross section may be inclined with respect to the thickness direction of the semiconductor wafer. If the groove is inclined with respect to the thickness direction of the semiconductor wafer, when the mold resin filled in the groove is further divided into individual package devices, the mold resin will not remain on the side surface of the package device chip Case. In particular, in order to increase the number of packaged devices that can be manufactured from a single semiconductor wafer, if the width of the planned dividing line is narrowed, the mold resin will not remain in the packaged device due to the variation of the groove interval. The doubt on the side of the chip becomes higher.

The present invention is an invention made in view of such problems, and provides a method for manufacturing a packaged device chip that makes it possible to make the mold resin remain on the side surface of the packaged device chip.

In order to solve the above-mentioned problems and achieve the objective, the method for manufacturing a packaged device wafer of the present invention is a method for manufacturing a packaged device wafer, which is characterized by including: a groove forming step, where a plurality of predetermined dividing lines are intersected A groove along the predetermined dividing line is formed on the front surface of the wafer on which the front surface of the device is formed in the divided regions; the package wafer forming step is to fill the groove with a mold resin and cover it with the mold resin The front side of the wafer is formed to form a packaged wafer; the outer periphery removal step is to remove the mold resin and the front side of the wafer along the outer periphery of the packaged wafer by 1/3~2/3 of the depth of the groove, so that The groove filled with the molding resin is exposed at the outer periphery; the calibration step is to find the position of the dividing groove of the package wafer to be formed along the groove according to the groove exposed at the outer periphery; and the dividing step is based on the The division groove is formed along the groove at the position found in the calibration step. Even if the groove is formed obliquely in the depth direction, the position of the groove detected in the calibration step can be averaged.

After the packaging wafer forming step and before the outer peripheral edge removal step, a grinding step may be provided. The grinding step is to grind the wafer after attaching a protective member to the mold surface side of the packaging wafer Thinning is performed on the back side of the resin, and the groove filled with the mold resin is exposed.

In the dividing step, the mold resin may be removed by laser light or a cutter.

In the method of manufacturing a packaged device wafer of the present invention, even if the groove filled with the mold resin is formed obliquely, the edge trimming (removal process along the outer periphery) is implemented deeper, and the position of the groove is recognized in the calibration step. It can be recognized by averaging, and it can make the mold resin remain in the sealing The side surface of the device-mounted wafer becomes a feasible effect.

10: Cutting device

11, 21, 31: working clamp table

11a, 21a, 31a: keep the surface

12: Cutting equipment

13: Cutter

14, 33: Y-axis mobile device

15: Z-axis mobile device

16, 37: camera equipment

17, 32: control equipment

20: Grinding device

22: Grinding grindstone

30: Laser processing device

34: Laser light irradiation equipment

35: Rotary drive source

36: X-axis mobile device

100, 100’: exposed

a, b: end

a1, a2, a1’, a2’, b1, b2, b1’, b2’: edge

BP: bump

c1, c2, c1’, c2’: the center in the width direction

D: Device

DD: segmentation groove

DDP, DDP’: Line segment

DDK, DDK’: distance

DP, DP’: depth

DR: device area

DT, DT’: ditch

F: ring frame

G1, G2: Camera image

GR: Peripheral remaining area

L: Pre-divided line

LR: Laser light

MR: Molded resin

PD: Packaged device wafer

PP: Protective member

PW, PW’: Packaged wafer

SB: Substrate

SD: side

ST1: Groove formation step

ST2: Package wafer formation steps

ST3: Grinding steps

ST4: Reposting steps

ST5: Outer edge removal step

ST6: Calibration procedure

ST7: Segmentation step

T: Cutting tape

W, W’: Wafer

WR: Back

WS, WS’: front

X, Y, Z: direction

Xa1, Xb1, Xa2, Xb2, Xc1, Xc2: The position of the edge of the dividing groove in the X-axis direction

Xc1, Xc2: The position of the center of the dividing groove in the X-axis direction

Yc1, Yc2: The position of the center of the dividing groove in the Y-axis direction

Ya1, Yb1, Ya2, Yb2, Yc1, Yc2: The position of the edge of the dividing groove in the Y-axis direction

Fig. 1(a) is a perspective view of a wafer constituting a packaged wafer to be processed in the manufacturing method of a packaged device wafer of Embodiment 1, and Fig. 1(b) is a perspective view of a device of the wafer shown in Fig. 1(a) .

2 is a cross-sectional view of a main part of a packaged wafer to be processed in the method of manufacturing a packaged device wafer of the first embodiment.

3 is a perspective view showing a packaged device chip manufactured by the method of manufacturing a packaged device chip of the first embodiment.

4 is a flowchart showing the flow of the manufacturing method of the packaged device wafer of the first embodiment.

FIG. 5 is a perspective view showing a schematic configuration of a cutting device used in the groove forming step of the method of manufacturing the packaged device wafer shown in FIG. 4. FIG.

6(a) is a cross-sectional view of the main part of the wafer in the groove forming step of the manufacturing method of the packaged device wafer shown in FIG. 4, and FIG. 6(b) is one of the manufacturing methods of the packaged device wafer shown in FIG. 4 A cross-sectional view of the main part of the wafer after the groove formation step. FIG. 6(c) is a perspective view of the wafer after the groove formation step in the manufacturing method of the packaged device wafer shown in FIG. 4.

FIG. 7 is a perspective view of the package wafer formed by the package wafer forming step of the method of manufacturing the package device wafer shown in FIG. 4.

Fig. 8(a) is a side view showing the grinding step of the manufacturing method of the packaged device wafer shown in Fig. 4, and Fig. 8(b) is the package after the grinding step of the manufacturing method of the packaged device wafer shown in Fig. 4 Cross-sectional view of the wafer.

FIG. 9 is a diagram showing a change in the manufacturing method of the packaged device chip shown in FIG. 4 A perspective view of the pasting steps.

10 is a perspective view showing a step of removing the outer periphery of the manufacturing method of the packaged device wafer shown in FIG. 4.

Fig. 11 is a cross-sectional view taken along line XI-XI in Fig. 10.

Fig. 12 is a cross-sectional view taken along line XII-XII in Fig. 10.

FIG. 13 is a perspective view showing the laser processing apparatus used in the calibration step and the dividing step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG.

14 is an enlarged perspective view showing the main part of the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4;

FIG. 15 is a plan view showing a calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG.

16 is a diagram showing an example of a captured image taken in the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4.

FIG. 17 is a diagram showing another example of the captured image taken in the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG.

18 is a diagram showing an example of the coordinates of the groove registered in the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4;

19 is a cross-sectional view of the main part of the packaged wafer after the dividing step of the manufacturing method of the packaged device wafer shown in FIG. 4.

20 is a side view of a packaged wafer with an exposed surface formed by the method of manufacturing a packaged device wafer of the first embodiment.

Fig. 21 is a side view of a package wafer with an exposed surface formed by the manufacturing method of the comparative example.

The form used to implement the invention

The form (embodiment) for implementing the present invention will be described in more detail with reference to the drawings. This invention is not an invention limited by the content described in the following embodiment. In addition, the constituent elements described below include those that can be easily imagined by a person having ordinary knowledge in the technical field to which the present invention pertains or are substantially the same. In addition, the configurations described below can be combined as appropriate. In addition, various configurations can be omitted, replaced, or changed without departing from the scope of the present invention.

[Embodiment 1]

The manufacturing method of the packaged device wafer of Embodiment 1 will be described with reference to the drawings. Fig. 1(a) is a perspective view of a wafer constituting a packaged wafer to be processed in the method of manufacturing a packaged device wafer of the first embodiment. Fig. 1(b) is a perspective view of the wafer device shown in Fig. 1(a). 2 is a cross-sectional view of a main part of a packaged wafer to be processed in the method of manufacturing a packaged device wafer of the first embodiment. 3 is a perspective view showing a packaged device chip manufactured by the method of manufacturing a packaged device chip of the first embodiment.

The package wafer PW shown in FIG. 2 which is the processing object of the manufacturing method of the packaged device wafer of the first embodiment is composed of the wafer W shown in FIG. 1. The wafer W shown in FIG. 1(a) is a disc-shaped semiconductor wafer or optical device wafer with silicon, sapphire, gallium arsenide, or the like as the substrate SB in the first embodiment. As shown in FIG. 1, the wafer W includes on its front surface WS: device regions DR, respectively, in a plurality of regions divided by a plurality of intersecting (orthogonal in the first embodiment) planned dividing lines L A device D is formed; and a peripheral remaining region GR surrounds the device region DR. On the front side of device D, As shown in FIG. 1(b), bumps BP with a plurality of protruding electrodes are formed.

As shown in FIG. 2, in the wafer W, the front surface WS of the device region DR and the groove DT formed along the planned dividing line L are covered with a mold resin MR to form a package wafer PW. The packaged wafer PW is divided along the planned dividing line L into the packaged device wafer PD shown in FIG. 3. In the package device wafer PD, the front surface WS and all the side surfaces SD of the substrate SB are covered with the mold resin MR, and the bumps BP are protruded from the mold resin MR, and the bumps BP are exposed.

Next, a method of manufacturing a packaged device wafer will be described with reference to the drawings. 4 is a flowchart showing the flow of the manufacturing method of the packaged device wafer of the first embodiment. FIG. 5 is a perspective view showing a schematic configuration of a cutting device used in the groove forming step of the method of manufacturing the packaged device wafer shown in FIG. 4. FIG. FIG. 6(a) is a cross-sectional view of the main part of the wafer in the groove forming step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. FIG. 6(b) is a cross-sectional view of the main part of the wafer after the groove forming step in the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. FIG. 6(c) is a perspective view of the wafer after the groove forming step in the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. FIG. 7 is a perspective view of the package wafer formed by the package wafer forming step of the method of manufacturing the package device wafer shown in FIG. 4. FIG. 8(a) is a side view showing the grinding step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. FIG. 8(b) is a cross-sectional view of the packaged wafer after the grinding step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. FIG. 9 is a perspective view showing the replacement step of the manufacturing method of the packaged device wafer shown in FIG. 4. 10 is a perspective view showing a step of removing the outer periphery of the manufacturing method of the packaged device wafer shown in FIG. 4. Fig. 11 is a cross-sectional view taken along line XI-XI in Fig. 10. Fig. 12 is a cross-sectional view taken along line XII-XII in Fig. 10. Figure 13 shows A perspective view of the laser processing device used in the calibration step and the dividing step of the manufacturing method of the packaged device wafer shown in FIG. 4. 14 is an enlarged perspective view showing the main part of the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4; FIG. 15 is a plan view showing a calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. 16 is a diagram showing an example of a captured image taken in the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. 17 is a diagram showing another example of the captured image taken in the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4. FIG. 18 is a diagram showing an example of the coordinates of the groove registered in the calibration step of the manufacturing method of the packaged device wafer shown in FIG. 4; 19 is a cross-sectional view of the main part of the packaged wafer after the dividing step of the manufacturing method of the packaged device wafer shown in FIG. 4.

The manufacturing method of the packaged device wafer of the first embodiment (hereinafter, only described as the manufacturing method) is to cut the packaged wafer PW shown in FIG. 2 along the planned dividing line L to manufacture the packaged device wafer PD shown in FIG. 3 Methods.

As shown in FIG. 4, the manufacturing method includes a groove formation step ST1, a package wafer formation step ST2, a grinding step ST3, a replacement step ST4, an outer periphery removal step ST5, an alignment step ST6, and a dividing step ST7.

The trench forming step ST1 is a step of forming trenches DT along each planned dividing line L on the front surface WS of the wafer W. The groove forming step ST1 is to form a groove DT along the longitudinal direction of each planned division line L on each planned division line L. The depth DP of the trench DT formed in the trench forming step ST1 is greater than the finished thickness of the substrate SB of the package device wafer PD. Also, in the first embodiment Among them, the width of the groove DT is 40 μm or more and 80 μm or less. In the first embodiment, the groove forming step ST1 is to suck and hold the back side WR of the back side of the front side WS of the wafer W on the holding surface 11a of the work chuck 11 of the cutting device 10 shown in FIG. 5, as shown in FIG. 6( The cutting blade 13 of the cutting device 12 is used as shown in a), and a groove DT is formed on the front surface WS of the wafer W as shown in FIG. 6(b).

In the groove forming step ST1, the work chuck table 11 is moved in the X-axis direction parallel to the horizontal direction by the X-axis moving device not shown in the figure, and the cutting tool 13 of the cutting device 12 is moved by the Y-axis moving device 14 It moves in the Y-axis direction parallel to the horizontal direction and orthogonal to the X-axis direction, and the cutting blade 13 of the cutting device 12 is moved in the Z-axis direction parallel to the vertical direction by the Z-axis moving device 15, as shown in the figure A groove DT is formed on the front surface WS of each planned dividing line L of the wafer W as shown in 6(c).

In addition, the cutting device 10 is provided with a control device 17 that controls: the work chuck table 11 is rotated around an axis parallel to the Z-axis direction, a rotation drive source not shown in the figure, and the crystal is photographed for calibration. The imaging device 16 of the circle W and the packaged wafer PW, the X-axis moving device, the Y-axis moving device 14, the Z-axis moving device 15, the rotation driving source, and the cutting device 12. The control device 17 is a computer that causes the cutting device 10 to perform processing operations on the wafer W and the packaged wafer PW.

The control device 17 has: an arithmetic processing device with a microprocessor such as a CPU (central processing unit), a processing device such as a ROM (read only memory) or RAM (random access memory) memory) storage device and input/output interface device. Operation of control device 17 The processing device performs arithmetic processing in accordance with the computer program stored in the storage device, and outputs the control signal for controlling the cutting device 10 to the above-mentioned constituent elements of the cutting device 10 through the input and output interface device. In addition, the control device 17 can be connected to a display device and an input device not shown in the figure. The display device is constituted by a liquid crystal display device that displays the status and images of the processing operation. The input device is the operator's registration processing The equipment used for content information, etc. The input device is constituted by at least one of a touch panel, a keyboard, etc., provided on the display device.

As shown in FIG. 7, the package wafer forming step ST2 is a step of filling the groove DT with a mold resin MR and covering the front surface WS of the wafer W with the mold resin MR to form a package wafer PW. In the first embodiment, the package wafer forming step ST2 is to hold the back surface WR of the wafer W on the holding table of the resin coating device not shown, and drop the molding resin MR on the front surface WS of the wafer W, and by The holding table is rotated around the axis parallel to the vertical direction to cover the entire front WS and the groove DT with the mold resin MR. In Embodiment 1, a thermosetting resin is used as the mold resin MR. The package wafer forming step ST2 is to heat and harden the mold resin MR covering the entire front surface WS of the wafer W and the groove DT. In addition, although the first embodiment covers the entire front surface WS and the groove DT with the mold resin MR, the bumps BP are exposed, but the present invention can also perform polishing processing on the hardened mold resin MR to make the bumps BP sure. To expose. Furthermore, in the package wafer forming step ST2, in addition to dropping the mold resin MR onto the wafer W, the wafer W may be embedded in the mold frame, and the mold resin MR may be filled in the gap between the wafer W and the mold frame. After making it harden.

The grinding step ST3 is a step performed after the package wafer forming step ST2 and before the outer periphery removing step ST5. As shown in FIG. 8(a), the grinding step ST3 is to grind the back surface WR side of the wafer W after attaching the protective member PP to the mold surface side covered with the mold resin MR that encapsulates the wafer PW. And as shown in FIG. 8(b), the groove DT filled with the mold resin MR is exposed to the back surface WR side, and the process of thinning the board|substrate SB to the thickness of a finished product. As shown in FIG. 8(a), in the grinding step ST3, after the protective member PP is attached to the mold resin MR side of the package wafer PW, the protective member PP is sucked and held on the work clamp table 21 of the grinding device 20. On the surface 21a, the back surface WR of the package wafer PW is brought into contact with the grinding stone 22, and the work clamp table 21 and the grinding stone 22 are rotated around the axis to align the back surface of the package wafer PW. WR implements grinding processing. As shown in FIG. 8(b), the grinding step ST3 thins the package wafer PW.

The replacement step ST4 is a step of attaching the dicing tape T to the back surface WR of the package wafer PW, and peeling off the protective member PP from the mold surface. As shown in FIG. 9, the exchange step ST4 is to attach the back surface WR of the package wafer PW to the dicing tape T to which the ring frame F has been attached to the outer periphery, and peel off the protective member PP from the mold surface.

The outer periphery removal step ST5 is to remove the mold resin MR and the front WS side of the wafer W along the outer periphery of the package wafer PW to remove the groove DT depth DP (as shown in FIG. 8(b)) of 1/3~2/ 3. A step of exposing the groove DT filled with the mold resin MR at the outer periphery. In the first embodiment, the outer periphery removing step ST5 is to remove the mold resin MR and the front surface WS of the wafer W covering the entire periphery of the outer periphery of the remaining area GR of the outer periphery of the package wafer PW. In implementation In the form 1, the outer peripheral edge removal step ST5 is the same as the groove formation step ST1, and as shown in FIG. 10, the back surface WR of the package wafer PW is sucked and held on the holding surface 11a of the work chuck 11 of the cutting device 10, so that The rotary drive source rotates the work chuck table 11 around the axis parallel to the Z-axis direction and makes the cutting tool 13 from the front WS to a position that becomes 1/3~2/3 of the depth DP of the groove DT, To make the cutting blade 13 cut into the mold resin MR on the outer periphery of the outer periphery remaining area GR and the front surface WS of the wafer W. As shown in FIGS. 11 and 12, the outer periphery removal step ST5 removes the mold resin MR on the entire periphery of the outer periphery of the outer periphery remaining area GR of the package wafer PW and the front surface WS of the wafer W to form the outer periphery remaining area The exposed surface 100 of the substrate SB is exposed on the entire circumference of the outer periphery of the GR. Furthermore, the bumps BP are omitted from FIGS. 9 to 12.

The calibration step ST6 is a step of finding the position of the dividing groove DD shown in FIG. 19 of the package wafer PW to be formed along the groove DT based on the groove DT exposed on the exposed surface 100 on the outer periphery of the outer periphery remaining region GR . As shown in FIG. 13, the calibration step ST6 exposes the groove DT filled with the mold resin MR and attracts and holds the package wafer PW on the holding surface 31 a of the work clamp table 31 of the laser processing device 30.

The laser processing device 30 moves the work clamp table 31 in the indexing feed direction, that is, in the Y-axis direction parallel to the horizontal direction by the Y-axis moving device 33, and makes the laser light irradiation device 34 face the plurality of predetermined divisions. One of the lines L is a predetermined dividing line L. In addition, the laser processing device 30 rotates the work chuck table 31 around the Z axis parallel to the vertical direction by rotating the drive source 35, and forms the planned dividing line L facing the laser beam irradiation equipment 34 Parallel to the processing feed direction, that is, parallel to the horizontal direction and The X-axis direction orthogonal to the Y-axis direction is parallel. The laser processing device 30 irradiates the laser light LR from the laser light irradiating device 34 and causes the X-axis moving device 36 to move the work clamp table 31 in the X-axis direction, and adjusts the predetermined dividing line facing the laser light irradiating device 34 L is irradiated with laser light LR to perform ablation processing.

In addition, the laser processing apparatus 30 includes a control device 32 that controls the imaging device 37, the X-axis moving device 36, the Y-axis moving device 33, the rotation drive source 35, and the laser that photograph the packaged wafer PW for calibration. Light irradiation equipment 34. The control device 32 is a computer that causes the laser processing device 30 to perform processing operations on the packaged wafer PW.

The control device 32 has: an arithmetic processing device with a microprocessor such as a CPU (central processing unit), a processing device such as ROM (read only memory) or RAM (random access memory) memory) storage device and input/output interface device. The arithmetic processing device of the control device 32 implements arithmetic processing in accordance with the computer program stored in the storage device, and outputs the control signal for controlling the laser processing device 30 to the laser processing device 30 through the input and output interface device. Elements. In addition, the control device 32 can be connected to a display device and an input device not shown in the figure. The display device is constituted by a liquid crystal display device that displays the status and images of the processing operation, and the input device is an operator registration processing The equipment used for content information, etc. The input device is constituted by at least one of a touch panel, a keyboard, etc., provided on the display device.

As shown in Figure 14 and Figure 15, the calibration step ST6 will rotate The drive source 35 rotates the work chuck 31 around the axis, so that the extending direction of the groove DT that has been exposed on the exposed surface 100 on the outer periphery of the outer peripheral residual area GR, that is, the longitudinal direction, is similar to that shown in FIG. 19 When the dividing groove DD is used, the machining feed direction of the machining feed table 31, that is, the X-axis direction is parallel. In the calibration step ST6, the control device 32 will make the rotary drive source 35 rotate the work chuck table 31 around the axis according to the image of the groove DT formed on the predetermined dividing line L taken by the imaging device 37 As shown in FIG. 15, the groove DT formed on the planned dividing line L of one of the planned dividing lines L orthogonal to each other is made parallel to the X-axis direction.

In the calibration step ST6, the two ends a and b of the plurality of grooves DT exposed on the exposed surface 100 of the outer periphery of the remaining area GR are photographed by the imaging device 37, as shown in FIGS. 16 and 17 taken from the imaging device 37 Find and register the coordinate information (X, Y) of both ends a, b or one side of the groove DT on the holding surface 31a of the work clamp table 31 in the captured images G1 and G2. The coordinate information (X, Y) of the groove DT will show the position in the X-axis direction and the position in the Y-axis direction. In the calibration step ST6, the arithmetic processing device of the control device 32 will find the coordinate information (X, Y), and store it, that is, register it in the storage device.

The calibration step ST6 calculates the position of the packaged wafer PW from the image captured by the imaging device 37. For example, detect the three coordinates of the outer periphery of the packaged wafer PW, find the center coordinate of the packaged wafer PW, and find the position of the packaged wafer PW on the holding surface 31a from the diameter of the packaged wafer PW registered in advance. position. As shown in FIG. 14, based on the detected position information of the packaged wafer PW, the X-axis moving device 36 and the Y-axis moving device 33 are used to move the work clamp table 31 and the imaging device 37 along the outer periphery of the packaged wafer PW. Move relatively, and sequentially photograph the grooves DT in the circumferential direction along the outer periphery of the package wafer PW to photograph both ends a and b of all grooves DT, and register the coordinate information (X, Y). Furthermore, although the first embodiment is that the calibration step ST6 will register the coordinate information (X, Y) of both ends a and b of all grooves DT, the present invention can also register a predetermined number of grooves DT every preset. Coordinate information (X, Y) of both ends a and b.

In the calibration step ST6, the control device 32 is made to extract the groove DT from the captured image G1 in FIG. 16, and calculate the position Xa1 in the X-axis direction of one of the edges a1 in the width direction of one end a of the long side direction of the groove DT With the position Ya1 in the Y-axis direction, the position Xa1 and Ya1 are used as the coordinate information (X, Y) of one of the edges a1 of the groove DT, as shown in FIG. 18, and registered in correspondence with the groove DT. In the calibration step ST6, the control device 32 is made to calculate the position Xb1 in the X-axis direction and the position Yb1 in the Y-axis direction of the other edge b1 in the width direction of one end a of the long side direction of the groove DT, and calculate the position Xb1 , Yb1 is the coordinate information (X, Y) of the other edge b1 of the groove DT, which is registered in correspondence with the groove DT as shown in FIG. 18.

Also, in the calibration step ST6, the control device 32 is made to extract the groove DT from the captured image G2 in FIG. 17, and calculate the X axis direction of one of the edges a2 in the width direction of the other end b in the longitudinal direction of the groove DT The position Xa2 and the position Ya2 in the Y-axis direction, and the position Xa2 and Ya2 as the coordinate information (X, Y) of one of the edges a2 of the groove DT, are registered as shown in FIG. 18 by establishing a correspondence with the groove DT. In the calibration step ST6, the control device 32 is made to calculate the position in the X-axis direction Xb2 and the position in the Y-axis direction of the other edge b2 in the width direction of the other end b in the longitudinal direction of the groove DT Yb2, and use the positions Xb2 and Yb2 as the coordinate information (X, Y) of the other edge b2 of the groove DT, and register it in correspondence with the groove DT as shown in FIG. 18.

In the first embodiment, in the calibration step ST6, the control device 32 is made to register the coordinate information Xa1, Ya1, Xb1, Yb1, Xa2, Ya2, Xb2, Yb2, but the coordinate information Xa1, Ya1, Xb1, and Yb1 of one end a in the longitudinal direction of all grooves DT may be registered. In addition, the present invention can also register coordinate information Xa1, Ya1, Xb1, Yb1, Xa2, Ya2, Xb2, Yb2 of the two ends a, b or one end a of the groove DT set in advance every predetermined number. In addition, in the first embodiment, in the calibration step ST6, the control device 32 is made to register the coordinates of both ends a and b that are 1 mm to 3 mm closer to the center than the outer edge of the package wafer PW in the longitudinal direction of the groove DT. Information Xa1, Ya1, Xb1, Yb1, Xa2, Ya2, Xb2, Yb2. Thereby, even if the cutting blade 13 is bent when the groove DT penetrates the outer peripheral edge of the package wafer PW, and the groove DT is snaked near the entrance or the exit, the influence can be eliminated.

The calibration step ST6 calculates the positions Xc1, Yc1, Xc2 of the dividing groove DD shown in Fig. 18 formed along the groove DT based on the coordinate information Xa1, Ya1, Xb1, Yb1, Xa2, Ya2, Xb2, and Yb2 of the registered groove DT , Yc2. In the calibration step ST6, the control device 32 takes the position Xc1 in the X-axis direction and the position Yc1 in the Y-axis direction of the widthwise center c1 of one end a in the longitudinal direction of each groove DT as the position of the dividing groove DD And calculate. In the calibration step ST6, the control device 32 uses the position Xc2 in the X-axis direction and the position Yc2 in the Y-axis direction of the center c2 in the width direction of the other end b in the longitudinal direction of each groove DT as the position of the dividing groove DD Bit Set and calculate.

The dividing step ST7 is a step of forming a dividing groove DD along the groove DT based on the positions Xc1, Yc1, Xc2, and Yc2 of the dividing groove DD found in the calibration step ST6. The dividing groove DD divides the mold resin MR filled in the groove DT, and divides the package wafer PW into the package device wafer PD. In the first embodiment, the width of the dividing groove DD is 15 μm or more and 30 μm or less.

In the dividing step ST7, according to the positions Xc1, Yc1, Xc2, and Yc2 of the dividing groove DD calculated by the control device 32, the X-axis moving device 36 and the Y-axis moving device 33 are controlled so that the laser light LR irradiates and fills each The mold resin MR of the groove DT, as shown in FIG. 19, forms the dividing groove DD. In the dividing step ST7, a dividing groove DD is formed by dividing the mold resin MR in the groove DT into two by the laser beam LR. In this way, the manufacturing method of the first embodiment is to remove the mold resin MR on the outer periphery and the front WS of the wafer W from the front surface WS of the wafer W to a position that becomes 1/3 to 2/3 of the depth DP of the groove DT , And the exposed surface 100 is formed. The manufacturing method of the first embodiment allows the control device 32 to calculate the positions of the division grooves DD Xc1, Yc1, Xc2, Yc2 from the captured images G1, G2 of the grooves DT exposed on the exposed surface 100, so it can be The positions of the grooves DT detected in the calibration step ST6 are averaged. Since the manufacturing method of Embodiment 1 controls the X-axis moving device 36 and Y-axis moving device 33 based on the positions Xc1, Yc1, Xc2, and Yc2 of the dividing groove DD calculated by the control device 32, the laser light LR is irradiated The mold resin MR is filled in each groove DT, so even if the groove DT is inclined in the thickness direction of the wafer W in the depth direction Ground formation, the dividing groove DD is also formed so that the dividing groove DD bisects the mold resin MR in the groove DT.

In the first embodiment, although the laser processing device 30 is used in the calibration step ST6 and the dividing step ST7, the cutting device 10 shown in FIG. 5 can also be used in the present invention. In summary, in the present invention, in the dividing step ST7, the mold resin MR filled in the groove DT may be removed by the cutter 13 to form the dividing groove DD.

The manufacturing method of the first embodiment is formed by removing the mold resin MR on the outer periphery and the front WS of the wafer W from the front surface WS of the wafer W to a position that becomes 1/3 to 2/3 of the depth DP of the groove DT. Exposure of the face 100. In the manufacturing method of the first embodiment, the control device 32 is caused to calculate the positions Xc1, Yc1, Xc2, and Yc2 of the dividing grooves DD from the captured images G1, G2 of the grooves DT exposed on the exposed surface 100. The groove DT filled with the mold resin MR is formed obliquely with respect to the thickness direction of the wafer W, and still exhibits the following effect: the mold resin MR filled in the groove DT can be divided into two by the dividing groove DD, and The mold resin MR remains on the side surface SD of the substrate SB of the package device chip PD.

Next, the inventors of the present invention compared the package wafer PW shown in FIG. 20 with the exposed surface 100 formed by the manufacturing method of the first embodiment and the package wafer PW' of the comparative example shown in FIG. 21. 20 is a side view of a packaged wafer with an exposed surface formed by the method of manufacturing a packaged device wafer of the first embodiment. Fig. 21 is a side view of a package wafer with an exposed surface formed by the manufacturing method of the comparative example.

In addition, Figure 20 is marked with the same symbols as in the first embodiment To illustrate, FIG. 21 shows the part corresponding to FIG. 20 with "'" at the end of the symbol in FIG. 20 for description. The packaging wafer PW shown in FIG. 20 and the packaging wafer PW' shown in FIG. 21 are formed by forming the grooves DT, DT' obliquely with respect to the thickness direction of the wafers W, W', and the grooves DT, DT' The angles with respect to the thickness direction of the wafers W and W'are formed to be equal. The package wafer PW shown in FIG. 20 has an exposed surface 100 formed at a position that is 1/2 of the depth DP of the trench DT, and the package wafer PW' shown in FIG. 21 has an exposed surface 100' formed at It becomes a position closer to the front surface WS' than the 1/2 of the depth DP' of the groove DT', and the distance from the front surface WS' of the wafer W'is 10 μm.

The shortest distance DDK of the line segment DDP parallel to the thickness direction of the wafer W through the positions C1 and C2 of the dividing groove DD of the package wafer PW in FIG. The shortest distance DDK' between the positions C1' and C2' of the dividing groove DD of the circle PW' and the line segment DDP' parallel to the thickness direction of the wafer W'from the inner surface of the groove DT' is greater. Therefore, it is clear that, compared with the package wafer PW' shown in FIG. 21, the package wafer PW shown in FIG. 20 can be formed on the substrate SB of the package device chip PD even if the trenches DT and DT' are formed obliquely. The side SD allows the mold resin MR to remain. As a result, it is clear that when the mold resin MR and the front WS side of the wafer W are removed less than 1/3 of the depth DP of the groove DT, and when the mold resin MR and the front WS of the wafer W are removed When the side removal exceeds 2/3 of the depth DP of the groove DT, compared to the position from the front WS to the position 1/3~2/3 of the depth DP of the groove DT, the mold resin MR is combined with the front WS of the wafer W. When the side is removed, it becomes difficult to leave the mold resin MR on the side surface of the package device chip PD.

In addition, the present invention is not limited to the invention of the above-mentioned embodiment. That is, various modifications can be made and implemented without departing from the gist of the present invention. For example, in Embodiment 1, although the groove DT is formed by the cutting blade 13 in the groove forming step ST1, in the present invention, in addition to the cutting performed by the cutting blade 13 in the groove forming step ST1, it is also possible to use laser The processing performed by ablation forms the trench DT.

ST1‧‧‧Gully formation steps

ST2‧‧‧Packaging wafer formation steps

ST3‧‧‧Grinding steps

ST4‧‧‧Replacement steps

ST5‧‧‧Outer periphery removal step

ST6‧‧‧Calibration procedure

ST7‧‧‧Split step

Claims (3)

A method for manufacturing a packaged device wafer, characterized by comprising: a groove forming step: forming an edge on the front surface of a wafer having a front surface of a device formed in a plurality of regions divided by a plurality of intersecting predetermined dividing lines The groove of the predetermined dividing line; the step of forming a package wafer, filling the groove with a mold resin and covering the front surface of the wafer with the mold resin to form a package wafer; the step of removing the outer periphery, along the package wafer Remove the molding resin and the front side of the wafer by 1/3~2/3 of the depth of the groove, so that the groove filled with the molding resin is exposed on the outer periphery; the calibration step is based on the outer periphery The exposed groove is used to find the position of the dividing groove of the package wafer to be formed along the groove; and the dividing step is to form the dividing groove along the groove according to the position found in the alignment step, even if the groove is in It is formed obliquely in the depth direction, and the position of the groove detected in the calibration step can still be averaged. The method for manufacturing a packaged device wafer of claim 1, which includes a grinding step after the packaging wafer forming step and before the outer peripheral edge removal step, and the grinding step is on the mold surface side of the package wafer After the protective member is attached, the back side of the wafer is ground to be thinned, and the groove filled with the mold resin is exposed. The method for manufacturing a packaged device wafer of claim 1 or 2, wherein, in the dividing step, the mold resin is removed by laser light or a cutter.

Images