TWI726815B - Antenna device and manufacturing method thereof - Google Patents

Antenna device and manufacturing method thereof Download PDF

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TWI726815B
TWI726815B TW109132815A TW109132815A TWI726815B TW I726815 B TWI726815 B TW I726815B TW 109132815 A TW109132815 A TW 109132815A TW 109132815 A TW109132815 A TW 109132815A TW I726815 B TWI726815 B TW I726815B
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substrate
antenna
chip
groove
antenna device
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TW109132815A
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TW202123415A (en
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陳忠宏
賴一丞
鄭翔及
郭世斌
馬丁 傑佛瑞 史凱特古德
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友達光電股份有限公司
德商Ses Rfid解決方案有限公司
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Abstract

An antenna device includes a substrate, a chip, and an antenna. The substrate has a first side, a second side, and at least two through holes wherein the first side and the second side are on the opposite sides of the substrate. The chip is disposed on the first side of the substrate. The chip has at least two pads on the side of the chip facing to the substrate. The at least two pads correspond to the at least two through holes respectively. The antenna is disposed on the second side of the substrate. At least a part of the antenna is located in the at least two through holes. The antenna electrically connects to the at least two pads by the at least two through holes.

Description

天線裝置及其製造方法Antenna device and manufacturing method thereof

本發明是有關於一種天線裝置及其製造方法,且特別是有關於一種具有通孔的天線裝置及其製造方法。The present invention relates to an antenna device and a manufacturing method thereof, and more particularly to an antenna device with a through hole and a manufacturing method thereof.

隨著時代的進展,無線射頻識別(Radio Frequency Identification,RFID)裝置逐漸受到重視。由於無線射頻識別裝置帶來的便利性,其被廣泛應用於各種領域中,如物流管理、倉儲管理、或身分識別等。With the progress of the times, Radio Frequency Identification (RFID) devices have gradually received attention. Due to the convenience brought by the radio frequency identification device, it is widely used in various fields, such as logistics management, warehouse management, or identity recognition.

目前,在一些無線射頻識別裝置的製造過程中,在天線基板上形成天線之後,將積體電路(integrated circuit,IC)晶片放置於天線基板上。如此,晶片與天線基板之間存在間隙,使得無線射頻識別裝置整體的厚度較厚且容易產生IC晶片破裂與天線與晶片接點斷裂等問題。另外,若使用塑膠積體電路(plastic integrated circuit)晶片等IC晶片,在將所述積體電路晶片接合於天線基板時,需要較傳統積體電路晶片更大的壓力及較長的壓合時間進行接合,因而存在壓力過大而使晶片容易產生破裂、天線容易斷線、及熱壓接合製程時間較長等問題。因此,目前亟需一種能解決前述問題的方法。At present, in the manufacturing process of some radio frequency identification devices, after the antenna is formed on the antenna substrate, an integrated circuit (IC) chip is placed on the antenna substrate. In this way, there is a gap between the chip and the antenna substrate, which makes the overall thickness of the radio frequency identification device thicker and is prone to problems such as cracking of the IC chip and breakage of the contact between the antenna and the chip. In addition, if IC chips such as plastic integrated circuit chips are used, when the integrated circuit chips are bonded to the antenna substrate, greater pressure and longer bonding time are required than traditional integrated circuit chips. For bonding, there are problems such as excessive pressure, which makes the chip easy to break, the antenna is easily broken, and the thermocompression bonding process takes a long time. Therefore, there is an urgent need for a method that can solve the aforementioned problems.

本發明提供一種天線裝置,可確保天線與晶片之間的電性連接,且可以避免晶片破裂、天線斷線等問題產生。The present invention provides an antenna device, which can ensure the electrical connection between the antenna and the chip, and can avoid problems such as chip cracking and antenna disconnection.

本發明另提供一種天線裝置的製造方法,能製作出可防止晶片破裂、天線斷線等問題產生的天線裝置,從而提升天線裝置的良率。The present invention also provides a method for manufacturing an antenna device, which can produce an antenna device that can prevent problems such as chip cracking, antenna disconnection, etc., thereby improving the yield of the antenna device.

本發明的至少一實施例提供一種天線裝置,包括基板、晶片以及天線。基板具有相反的第一面與第二面、以及至少兩個通孔。晶片設置於基板的第一面上,晶片於面向基板的表面具有分別對應至少兩個通孔的至少兩個接墊。天線設置於基板的第二面上,天線的至少一部分位於至少兩個通孔中,天線經由至少兩個通孔與至少兩個接墊電性連接。At least one embodiment of the present invention provides an antenna device including a substrate, a chip, and an antenna. The substrate has opposite first and second surfaces, and at least two through holes. The chip is disposed on the first surface of the substrate, and the surface of the chip facing the substrate has at least two pads respectively corresponding to at least two through holes. The antenna is disposed on the second surface of the substrate, at least a part of the antenna is located in at least two through holes, and the antenna is electrically connected to at least two pads through the at least two through holes.

本發明的至少一實施例提供一種天線裝置的製造方法,包括基板準備步驟、晶片放置步驟、及天線形成步驟等步驟。在基板準備步驟中,於基板中形成至少兩個通孔,基板具有相反的第一面與第二面。在晶片放置步驟中,將晶片放置於基板上的第一面上。晶片於面向基板的表面具有分別對應至少兩個通孔的至少兩個接墊。在天線形成步驟中,形成天線於基板的第二面上。天線的至少一部分位於至少兩個通孔中,天線經由至少兩個通孔與至少兩個接墊電性連接。At least one embodiment of the present invention provides a manufacturing method of an antenna device, which includes steps such as a substrate preparation step, a wafer placement step, and an antenna formation step. In the substrate preparation step, at least two through holes are formed in the substrate, and the substrate has opposite first and second surfaces. In the wafer placement step, the wafer is placed on the first surface on the substrate. The chip has at least two pads corresponding to at least two through holes on the surface facing the substrate. In the antenna forming step, the antenna is formed on the second surface of the substrate. At least a part of the antenna is located in at least two through holes, and the antenna is electrically connected to at least two pads through the at least two through holes.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

在整個說明書中,相同的附圖標記表示相同或類似的元件。在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。應當理解,當諸如層、膜、區域或基板的元件被稱為「在另一元件上」時,其可以直接在另一元件上,或者中間元件可以也存在。二元件互相「電性連接」可為二元件間存在其它元件。Throughout the specification, the same reference numerals indicate the same or similar elements. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on another element," it can be directly on the other element, or intervening elements may also be present. The "electrical connection" of two components to each other can mean that there are other components between the two components.

應當理解,儘管術語「第一」與「第二」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。It should be understood that although the terms "first" and "second" etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, and/or parts should not be affected by Limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section.

這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式「一」和「一個」旨在包括複數形式,包括「至少一個」。「至少兩個的一者」旨在表示複數形式中的至少一部分,其數量可為單數亦可為複數、而「至少兩個的另一者」表示除前述部分以外的另一部分,其數量可為單數亦可為複數。「或」表示「及/或」。還應當理解,當在本說明書中使用時,術語「包括」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used here is only for the purpose of describing specific embodiments and is not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "a" and "an" are intended to include plural forms, including "at least one." "One of at least two" is intended to mean at least a part of the plural form, the number of which may be singular or plural, and "the other of at least two" means another part other than the aforementioned part, the number of which may be It may be singular or plural. "Or" means "and/or". It should also be understood that when used in this specification, the terms "including" and/or "including" designate the presence of the features, regions, wholes, steps, operations, elements, and/or components, but do not exclude one or more The existence or addition of other features, regions as a whole, steps, operations, elements, components, and/or combinations thereof.

此外,諸如「下」或「底面」和「上」或「頂面」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「上」或「下」可以包括上方和下方的取向。In addition, relative terms such as “lower” or “bottom surface” and “upper” or “top surface” may be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper," depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" or "below" other elements will be oriented "above" the other elements. Thus, the exemplary terms "upper" or "lower" can include an orientation of above and below.

本文使用的「約」或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」或「實質上」可以表示在所述值的一個或多個標準偏差內,或±30%、20%、10%、5%內。再者,本文使用的「約」或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about" or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the error associated with the measurement A specific number (ie, the limit of the measurement system). For example, "about" or "substantially" can mean within one or more standard deviations of the stated value, or within ±30%, 20%, 10%, 5%. Furthermore, the "about" or "substantially" used herein can select a more acceptable deviation range or standard deviation based on optical properties, etching properties, or other properties, and not one standard deviation can be used for all properties.

除非另有定義,本文使用的所有術語包括技術和科學術語具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

圖1A是依照本發明的第一實施例的一種天線裝置的俯視示意圖;圖1B是依照本發明的第一實施例的一種天線裝置的仰視示意圖;圖1C為沿著圖1A中的X1-X2線段的局部剖面示意圖;圖1D為沿著圖1A的Y1-Y2線段的剖面示意圖。為方便說明,圖1A與圖1B中以虛線表示通孔102的位置。圖1B中以另一虛線表示晶片110的位置。1A is a schematic top view of an antenna device according to the first embodiment of the present invention; FIG. 1B is a bottom schematic view of an antenna device according to the first embodiment of the present invention; FIG. 1C is along X1-X2 in FIG. 1A A schematic partial cross-sectional view of the line segment; FIG. 1D is a schematic cross-sectional view along the line Y1-Y2 of FIG. 1A. For the convenience of description, the position of the through hole 102 is indicated by a dotted line in FIGS. 1A and 1B. Another dashed line in FIG. 1B indicates the position of the wafer 110.

請參照圖1A至圖1D,天線裝置10包括基板100、晶片110、以及天線120。基板100具有相反的第一面100a與第二面100b、以及至少兩個通孔102。在天線裝置的俯視方向上,通孔102貫穿整個基板100。晶片110設置於基板100的第一面100a上,且具有相反的主動面110a與背面110b。天線120相對於晶片110而設置於基板100的第二面100b上,且天線120經由通孔102接合至設置於晶片110的主動面110a上的接墊112。1A to 1D, the antenna device 10 includes a substrate 100, a chip 110, and an antenna 120. The substrate 100 has a first surface 100 a and a second surface 100 b opposite to each other, and at least two through holes 102. In the plan direction of the antenna device, the through hole 102 penetrates the entire substrate 100. The chip 110 is disposed on the first surface 100a of the substrate 100 and has opposite active surfaces 110a and back surfaces 110b. The antenna 120 is disposed on the second surface 100 b of the substrate 100 relative to the chip 110, and the antenna 120 is bonded to the pad 112 disposed on the active surface 110 a of the chip 110 through the through hole 102.

在本實施例中,基板100可為可撓式基板。基板100的材料可包括紙、聚乙烯對苯二甲酸酯(polyethylene terephthalate,PET)、聚氯乙烯(polyvinyl chloride,PVC)、塑膠膜、或其他適宜的材料等,本領域普通技術人員可依據設計需求選用基板100的材料,本發明並不以此為限。舉例來說,當將天線裝置10用於包裝盒(如牛奶盒、紙袋、餅乾袋等)上時,基板100例如為用於形成包裝盒的基材(如紙、牛皮紙、塑膠等)。In this embodiment, the substrate 100 may be a flexible substrate. The material of the substrate 100 may include paper, polyethylene terephthalate (PET), polyvinyl chloride (PVC), plastic film, or other suitable materials, etc., according to those of ordinary skill in the art The design needs to select the material of the substrate 100, and the present invention is not limited to this. For example, when the antenna device 10 is used on a packaging box (such as a milk box, a paper bag, a biscuit bag, etc.), the substrate 100 is, for example, a substrate (such as paper, kraft paper, plastic, etc.) used to form the packaging box.

請參照圖1C與圖1D,晶片110的主動面110a面向基板100,且在主動面110a上包括至少兩個接墊112。請參照圖1D,接墊112的側面與晶片110的側面例如相隔一距離D1,且距離D1的下限較佳為0.5 mm,更佳為1 mm。另外,距離D1的上限並無特別限定,只要大於0 mm即可。在一實施例中,距離D1例如為晶片110切割時之切割道的間距,藉此可避免晶片110切割時傷到接墊112。另一方面,也可避免天線120填充通孔102時,產生導電膠溢膠情形。在本實施例中,晶片110可為以塑膠為基底的積體電路元件,即為將主動元件與電路形成於如塑膠等可撓式基板上的晶片型態。主動面110a為包括薄膜電晶體TFT等積體電路的形成表面,在本實施例中,接墊112可作為電性連接至晶片110內部積體電路的接點。接墊112的材料包括導電材料,例如金、銀、銅、鋁、鉬、鈦或其他金屬或包含前述金屬的合金。1C and 1D, the active surface 110a of the chip 110 faces the substrate 100, and the active surface 110a includes at least two pads 112. 1D, the side surface of the pad 112 is separated from the side surface of the chip 110 by a distance D1, and the lower limit of the distance D1 is preferably 0.5 mm, more preferably 1 mm. In addition, the upper limit of the distance D1 is not particularly limited, as long as it is greater than 0 mm. In one embodiment, the distance D1 is, for example, the distance between the dicing lanes when the chip 110 is diced, so as to prevent the pad 112 from being damaged when the chip 110 is diced. On the other hand, it can also avoid the conductive glue overflow when the antenna 120 fills the through hole 102. In this embodiment, the chip 110 may be an integrated circuit component based on plastic, that is, a chip type in which active components and circuits are formed on a flexible substrate such as plastic. The active surface 110a is the formation surface of the integrated circuit including the thin film transistor TFT, etc. In this embodiment, the pad 112 can be used as a contact electrically connected to the internal integrated circuit of the chip 110. The material of the pad 112 includes conductive materials, such as gold, silver, copper, aluminum, molybdenum, titanium, or other metals or alloys containing the foregoing metals.

在本實施例中,晶片110的接墊112分別對應基板100的通孔102。舉例來說,在晶片110的4個角上分別設置有4個接墊112的情況下,4個通孔102分別對應4個接墊112而設置於基板100中。如圖1C所示,在晶片110的短邊方向X上,其中2個接墊112例如位於主動面110a的一短邊上,且沿短邊方向X而分別設置於鄰近晶片110的長邊的兩端,2個通孔102在俯視方向上與該2個接墊112重疊。需注意的是,雖然圖1C所繪示在晶片各短邊上的接墊數量與通孔數量以2個為例,但本發明不以此為限。在其他實施例中,在晶片各短邊上的接墊數量與通孔數量也可以是1個或大於等於2個,接墊的型態亦可以視不同的電性連接方式而進行調整,詳於後文說明。如圖1D所示,在晶片110的長邊方向Y上,另一接墊112例如相對於上述2個接墊112的其中一者而位於主動面110a沿長邊方向Y的一端。In this embodiment, the pads 112 of the chip 110 correspond to the through holes 102 of the substrate 100 respectively. For example, when four pads 112 are respectively provided on the four corners of the chip 110, the four through holes 102 are provided in the substrate 100 corresponding to the four pads 112, respectively. As shown in FIG. 1C, in the short-side direction X of the chip 110, two of the pads 112 are, for example, located on a short side of the active surface 110a, and are respectively disposed adjacent to the long side of the chip 110 along the short-side direction X. At both ends, the two through holes 102 overlap the two pads 112 in the top view direction. It should be noted that although the number of pads and the number of through holes on each short side of the chip shown in FIG. 1C are two as an example, the present invention is not limited thereto. In other embodiments, the number of pads and the number of through holes on each short side of the chip can also be 1 or greater than or equal to 2, and the type of the pads can also be adjusted according to different electrical connection methods. It will be explained later. As shown in FIG. 1D, in the longitudinal direction Y of the chip 110, the other pad 112 is located at one end of the active surface 110 a along the longitudinal direction Y, for example, relative to one of the two pads 112 described above.

請參照圖1B至圖1D,天線120例如為螺旋狀線圈或其他形狀,且天線120的兩端經由通孔102分別電性連接至晶片110的接墊112。在本實施例中,對天線120的兩端具體說明如下:天線120的一端為位於天線最外圈上,且自線圈最外圈的末端向內(向最內圈的方向)延伸、覆蓋基板的通孔且在俯視方向上橫跨晶片的短邊方向的特定線段,後文將此特定線段稱為天線120的第一接合線段122;另一端為位於天線最內圈上,且自最內圈的末端向外(向最外圈的方向)延伸、覆蓋基板的通孔且在俯視方向上橫跨晶片的短邊方向的特定線段,後文將此特定線段稱為天線120的第二接合線段124。1B to 1D, the antenna 120 is, for example, a helical coil or other shapes, and both ends of the antenna 120 are electrically connected to the pads 112 of the chip 110 through the through holes 102, respectively. In this embodiment, the two ends of the antenna 120 are specifically described as follows: one end of the antenna 120 is located on the outermost circle of the antenna, and extends inward (in the direction of the innermost circle) from the end of the outermost circle of the coil to cover the substrate A specific line segment across the short side of the chip in the top view direction. This specific line segment will be referred to as the first bonding line segment 122 of the antenna 120; the other end is located on the innermost circle of the antenna and starts from the innermost The end of the loop extends outward (in the direction of the outermost loop), covers the through hole of the substrate, and crosses the specific line of the short side of the chip in the top view direction. This specific line is hereinafter referred to as the second bonding of the antenna 120 Line 124.

在本實施例中,天線120的第一接合線段122與第二接合線段124分別完整覆蓋基板100的通孔102。進一步而言,如圖1B所示,在天線裝置的俯視方向上,第一接合線段122與第二接合線段124的覆蓋面積分別大於通孔102的面積。換句話說,通孔102與第一接合線段122的側面相隔一距離D3,通孔102與第二接合線段124的側面相隔一距離D4。在本實施例中,距離D3的下限較佳為0.5 mm,更佳為1 mm。距離D4的下限較佳為0.5 mm,更佳為1 mm。另外,距離D3及距離D4的上限並無特別限定,只要大於0 mm即可。如此一來,可增加第一接合線段122與第二接合線段124的結構強度,並確保天線120與晶片110的電性連接。再者,通孔102在基板100上的投影面積例如大於晶片110的接墊112在基板100上的投影面積。藉此,當天線120完整覆蓋通孔102時,可確保天線120與接墊112的接觸面積,從而可改善天線120與晶片110的電性連接。在本實施例中,天線120的材料包括導電材料,例如銀、銅、鋁、石墨烯或其他導電材料。此外,天線120的第一接合線段122與第二接合線段124的寬度亦可大於天線120其他部位的寬度。在基板100的第二面100b上,相較於其他部分的天線120,作為第一接合線段122的最外圈線段及作為第二接合線段124的最內圈線段在基板投影方向上具有較大的覆蓋面積,據此可以確保天線完整覆蓋通孔,從而確保天線與晶片之間的電性連接、以及避免天線產生斷線或破裂等不良。In this embodiment, the first bonding wire segment 122 and the second bonding wire segment 124 of the antenna 120 respectively completely cover the through hole 102 of the substrate 100. Furthermore, as shown in FIG. 1B, in the top view direction of the antenna device, the coverage areas of the first bonding wire segment 122 and the second bonding wire segment 124 are respectively larger than the area of the through hole 102. In other words, the through hole 102 is separated from the side surface of the first bonding line segment 122 by a distance D3, and the through hole 102 is separated from the side surface of the second bonding line segment 124 by a distance D4. In this embodiment, the lower limit of the distance D3 is preferably 0.5 mm, more preferably 1 mm. The lower limit of the distance D4 is preferably 0.5 mm, more preferably 1 mm. In addition, the upper limit of the distance D3 and the distance D4 is not particularly limited, as long as it is greater than 0 mm. In this way, the structural strength of the first bonding wire segment 122 and the second bonding wire segment 124 can be increased, and the electrical connection between the antenna 120 and the chip 110 can be ensured. Furthermore, the projected area of the through hole 102 on the substrate 100 is, for example, larger than the projected area of the pad 112 of the chip 110 on the substrate 100. In this way, when the antenna 120 completely covers the through hole 102, the contact area between the antenna 120 and the pad 112 can be ensured, so that the electrical connection between the antenna 120 and the chip 110 can be improved. In this embodiment, the material of the antenna 120 includes conductive materials, such as silver, copper, aluminum, graphene, or other conductive materials. In addition, the width of the first bonding wire segment 122 and the second bonding wire segment 124 of the antenna 120 may also be greater than the width of other parts of the antenna 120. On the second surface 100b of the substrate 100, compared with other parts of the antenna 120, the outermost circle segment as the first bonding line segment 122 and the innermost circle segment as the second bonding line segment 124 have a larger size in the projection direction of the substrate. Therefore, it can ensure that the antenna completely covers the through hole, thereby ensuring the electrical connection between the antenna and the chip, and avoiding defects such as disconnection or rupture of the antenna.

基於上述,藉由上述第一接合線段122及第二接合線段124,可確保天線120完整覆蓋通孔102,而可確保天線120與接墊112的接觸面積,並且也可以避免天線產生斷線等問題,從而改善天線120與晶片110之間的電性連接。Based on the above, the first bonding wire segment 122 and the second bonding wire segment 124 can ensure that the antenna 120 completely covers the through hole 102, and the contact area between the antenna 120 and the pad 112 can be ensured, and the antenna can also be prevented from disconnecting, etc. The problem is to improve the electrical connection between the antenna 120 and the chip 110.

在本實施例中,在基板100與晶片110之間還具有黏著層。In this embodiment, there is an adhesive layer between the substrate 100 and the wafer 110.

請參照圖1A、圖1C與圖1D,在基板100的第一面100a側,晶片110可藉由黏著層130而貼附固定於基板100上。黏著層130在基板投影方向上的面積例如大於或等於或小於晶片110在基板投影方向上的面積。如此一來,可以防止晶片110自基板100上脫落。在本實施例中,黏著層130的材料例如包括黏膠,如熱熔膠或其他適宜的黏著材料,但本發明不限於此。1A, 1C, and 1D, on the side of the first surface 100a of the substrate 100, the chip 110 can be attached and fixed on the substrate 100 by the adhesive layer 130. The area of the adhesive layer 130 in the projection direction of the substrate is, for example, greater than or equal to or smaller than the area of the wafer 110 in the projection direction of the substrate. In this way, the wafer 110 can be prevented from falling off from the substrate 100. In this embodiment, the material of the adhesive layer 130 includes, for example, adhesive, such as hot melt adhesive or other suitable adhesive materials, but the present invention is not limited thereto.

在本實施例中,黏著層130例如具有分別對應於多個通孔102的多個開孔132。在天線裝置的俯視方向上,開孔132貫穿整個黏著層130。據此,天線120可經由通孔102與開孔132接合至晶片110。In this embodiment, the adhesive layer 130 has, for example, a plurality of openings 132 corresponding to the plurality of through holes 102 respectively. In the top view of the antenna device, the opening 132 penetrates the entire adhesive layer 130. Accordingly, the antenna 120 can be bonded to the chip 110 through the through hole 102 and the opening 132.

在本實施例中,通孔102與開孔132例如可以在同一道製程中形成,因此,開孔132在基板100的投影與通孔102在基板100的投影實質上重疊。另外,開孔132在基板100的投影面積例如大於接墊112在基板100的投影面積。藉此,當天線120經由通孔102與開孔132接合至接墊112時,通孔102與開孔132之間無段差,可確保天線120填滿整個通孔102與開孔132,進而改善天線120與晶片110之間的電性連接。In this embodiment, the through hole 102 and the opening 132 can be formed in the same manufacturing process. Therefore, the projection of the opening 132 on the substrate 100 and the projection of the through hole 102 on the substrate 100 substantially overlap. In addition, the projected area of the opening 132 on the substrate 100 is, for example, larger than the projected area of the pad 112 on the substrate 100. Thereby, when the antenna 120 is joined to the pad 112 through the through hole 102 and the opening 132, there is no step difference between the through hole 102 and the opening 132, which can ensure that the antenna 120 fills the entire through hole 102 and the opening 132, thereby improving The electrical connection between the antenna 120 and the chip 110.

在一些實施例中,當黏著層130在基板投影方向上的面積大於晶片110在基板投影方向上的面積時,晶片110例如埋設於黏著層130的一部分內,使得位於基板100與晶片110之間的黏著層130的厚度小於位於晶片110周邊的黏著層130。舉例來說,黏著層130還可具有凹槽134,且晶片110例如埋設於凹槽134內。藉此,可增強晶片110與黏著層130之間的黏著力,進而可以防止晶片110自基板100上脫落。In some embodiments, when the area of the adhesive layer 130 in the projection direction of the substrate is greater than the area of the wafer 110 in the projection direction of the substrate, the wafer 110 is, for example, buried in a part of the adhesive layer 130 so as to be located between the substrate 100 and the wafer 110 The thickness of the adhesive layer 130 is smaller than that of the adhesive layer 130 located at the periphery of the chip 110. For example, the adhesive layer 130 may further have a groove 134, and the chip 110 is buried in the groove 134, for example. In this way, the adhesive force between the chip 110 and the adhesive layer 130 can be enhanced, and the chip 110 can be prevented from falling off the substrate 100.

在本實施例中,相較於傳統的天線裝置,天線裝置10具有較小的整體厚度,且天線印刷時晶片與基板之間的斷差小。舉例來說,相較於傳統的天線裝置(厚度大於100 μm),本發明之天線裝置10的厚度因僅包含基板100、晶片110、天線120、黏著層130的厚度,故天線裝置10的整體厚度可薄化至70 μm~80 μm。另外,天線120印刷時晶片與基板之間的斷差例如為23 μm。In this embodiment, compared with the conventional antenna device, the antenna device 10 has a smaller overall thickness, and the gap between the chip and the substrate during antenna printing is small. For example, compared with the conventional antenna device (thickness greater than 100 μm), the thickness of the antenna device 10 of the present invention only includes the thickness of the substrate 100, the chip 110, the antenna 120, and the adhesive layer 130, so the entire antenna device 10 The thickness can be thinned to 70 μm~80 μm. In addition, the gap between the wafer and the substrate when the antenna 120 is printed is, for example, 23 μm.

圖2A是依照本發明的第二實施例的一種天線裝置的俯視示意圖;圖2B是依照本發明的第二實施例的一種天線裝置的仰視示意圖;圖2C為沿著圖2A中的X1-X2線段的局部剖面示意圖;圖2D為沿著圖2A的Y1-Y2線段的剖面示意圖。在此必須說明的是,圖2A至圖2D的實施例沿用圖1A至圖1D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。為方便說明,圖2A與圖2B中仍繪示出位於保護層210與保護層210下的其他元件。2A is a schematic top view of an antenna device according to the second embodiment of the present invention; FIG. 2B is a bottom schematic view of an antenna device according to the second embodiment of the present invention; FIG. 2C is along X1-X2 in FIG. 2A A schematic partial cross-sectional view of the line segment; FIG. 2D is a schematic cross-sectional view along the line Y1-Y2 of FIG. 2A. It must be noted here that the embodiment of FIGS. 2A to 2D uses the element numbers and part of the content of the embodiment of FIGS. 1A to 1D, wherein the same or similar numbers are used to represent the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here. For the convenience of description, FIG. 2A and FIG. 2B still show other elements located under the protective layer 210 and the protective layer 210.

請參照圖2A至圖2D,本實施例之天線裝置20與第一實施例之天線裝置10的不同處為基板100的第一面100a側還具有凹槽200與保護層210;基板100的第二面100b側還具有保護層220。2A to 2D, the difference between the antenna device 20 of this embodiment and the antenna device 10 of the first embodiment is that the first surface 100a side of the substrate 100 further has a groove 200 and a protective layer 210; There is also a protective layer 220 on the side of the two sides 100b.

在本實施例中,可進一步於基板100中設置凹槽200(第一凹槽)。舉例來說,可在基板100的第一面100a上例如以沖壓的方式沖壓晶片預定形成區域的基板100,以薄化該晶片預定形成區域的基板厚度,而於該晶片預定形成區域處形成可容置晶片110的凹槽200。在一些實施例中,在位於凹槽200處的基板100的沖壓密度例如大於位於凹槽200的周圍處的基板100的沖壓密度,但本發明不以此為限。請參照圖2C與圖2D,凹槽200的側壁與基板100的第二面100b之間具有夾角θ1。舉例來說,夾角θ1可為銳角,但本發明不以此為限。In this embodiment, a groove 200 (first groove) may be further provided in the substrate 100. For example, the first surface 100a of the substrate 100 can be stamped on the first surface 100a of the substrate 100 in the predetermined region of the wafer, for example, to reduce the thickness of the substrate in the predetermined region of the wafer, and the wafer can be formed at the predetermined region of the wafer. The groove 200 for accommodating the wafer 110. In some embodiments, the punching density of the substrate 100 at the groove 200 is greater than the punching density of the substrate 100 at the periphery of the groove 200, but the present invention is not limited thereto. 2C and 2D, there is an included angle θ1 between the sidewall of the groove 200 and the second surface 100b of the substrate 100. For example, the included angle θ1 may be an acute angle, but the invention is not limited to this.

在本實施例中,基板100的通孔102例如設置於凹槽200底面200b的基板100內。請參照圖2D,通孔102例如與凹槽200的側壁相隔一距離D2,且距離D2大於或等於0 mm。舉例來說,距離D2的上限較佳為1.5 mm,更佳為1 mm。In this embodiment, the through hole 102 of the substrate 100 is, for example, provided in the substrate 100 on the bottom surface 200 b of the groove 200. 2D, for example, the through hole 102 is separated from the sidewall of the groove 200 by a distance D2, and the distance D2 is greater than or equal to 0 mm. For example, the upper limit of the distance D2 is preferably 1.5 mm, more preferably 1 mm.

晶片110例如設置於凹槽200內。圖2D中,是以凹槽200的深度與晶片110的高度實質上相同為例進行說明。再者,凹槽深度不大於基板整體的厚度,亦即在凹槽200的底面200b保留一定厚度的基板100。此外,凹槽200的深度不限於與晶片110的厚度一致,可視需求調整,本發明並不以此為限。在一實施例中,凹槽200的深度例如設置為小於位於凹槽200之外的基板100的厚度。舉例來說,凹槽200的深度例如為16 μm~20 μm。在本實施例中,凹槽200的深度可以晶片110的背面110b實質上切齊於基板100的第一面100a的方式來進行設置。換句話說,晶片110的背面110b與基板100的第一面100a可為共平面。在此,晶片110的背面110b與基板100的第一面100a之間的水平高度差位於標準偏差範圍內,都可視為本文所述之「共平面」,其中標準偏差範圍例如±30%內。The wafer 110 is disposed in the groove 200, for example. In FIG. 2D, the description is made by taking an example in which the depth of the groove 200 and the height of the wafer 110 are substantially the same. Furthermore, the depth of the groove is not greater than the thickness of the entire substrate, that is, a certain thickness of the substrate 100 is reserved on the bottom surface 200 b of the groove 200. In addition, the depth of the groove 200 is not limited to be consistent with the thickness of the wafer 110, and can be adjusted according to requirements, and the present invention is not limited thereto. In an embodiment, the depth of the groove 200 is set to be smaller than the thickness of the substrate 100 located outside the groove 200, for example. For example, the depth of the groove 200 is, for example, 16 μm to 20 μm. In this embodiment, the depth of the groove 200 can be set in such a manner that the back surface 110 b of the wafer 110 is substantially aligned with the first surface 100 a of the substrate 100. In other words, the back surface 110b of the chip 110 and the first surface 100a of the substrate 100 may be coplanar. Here, the level difference between the back surface 110b of the chip 110 and the first surface 100a of the substrate 100 is within the standard deviation range, and both can be regarded as "coplanar" as described herein, where the standard deviation range is within ±30%, for example.

另外,在天線裝置的俯視方向上,凹槽200不會貫穿整個基板100。換句話說,凹槽200的底面200b與基板100的第二面100b之間的距離不為0 μm。在一實施例中,凹槽200的底面200b與基板100的第二面100b之間的距離例如為16 μm~20 μm,可依據基板的強韌度來調整凹槽處的基板殘存厚度,本發明不限於此。In addition, in the planar direction of the antenna device, the groove 200 does not penetrate the entire substrate 100. In other words, the distance between the bottom surface 200b of the groove 200 and the second surface 100b of the substrate 100 is not 0 μm. In one embodiment, the distance between the bottom surface 200b of the groove 200 and the second surface 100b of the substrate 100 is, for example, 16 μm to 20 μm. The residual thickness of the substrate at the groove can be adjusted according to the strength of the substrate. The invention is not limited to this.

在一些實施例中,在基板100與晶片110之間具有黏著層130的情況下,黏著層130可位於凹槽200的底面200b,而可將晶片110貼附固定於凹槽200內。請參照圖2D,黏著層130的開孔132例如與凹槽200的側壁相隔一距離D2,且距離D2的上限較佳為1.5 mm,更佳為小於1 mm。另外,距離D2的下限並無特別限定,只要大於0 mm即可。In some embodiments, when there is an adhesive layer 130 between the substrate 100 and the chip 110, the adhesive layer 130 may be located on the bottom surface 200 b of the groove 200, and the chip 110 may be attached and fixed in the groove 200. 2D, the opening 132 of the adhesive layer 130 is separated from the sidewall of the groove 200 by a distance D2, and the upper limit of the distance D2 is preferably 1.5 mm, and more preferably less than 1 mm. In addition, the lower limit of the distance D2 is not particularly limited, as long as it is greater than 0 mm.

基於上述,藉由在基板設置如上的凹槽,不僅可降低天線裝置20的整體厚度,也可避免因晶片凸出基板而容易在製造過程中受到破壞而影響良率等問題。舉例來說,相較於傳統的天線裝置(厚度大於100 μm),本發明之天線裝置20的厚度因僅包含基板100與天線120的厚度,故天線裝置20的整體厚度可達小於50 μm的程度。另外,天線印刷時晶片與基板之間的斷差例如3 μm~9 μm,較佳為7 μm。Based on the above, by providing the above grooves on the substrate, not only the overall thickness of the antenna device 20 can be reduced, but also problems such as the wafer protruding from the substrate and easily damaged during the manufacturing process and affecting the yield rate can be avoided. For example, compared with the conventional antenna device (thickness greater than 100 μm), the thickness of the antenna device 20 of the present invention only includes the thickness of the substrate 100 and the antenna 120, so the overall thickness of the antenna device 20 can be less than 50 μm. degree. In addition, the gap between the wafer and the substrate during antenna printing is, for example, 3 μm to 9 μm, preferably 7 μm.

在本實施例中,基板100上還可選擇性地包括保護層。In this embodiment, the substrate 100 may also optionally include a protective layer.

請參照圖2A至圖2D,在基板100的第一面100a側,保護層210至少覆蓋形成有晶片110的區域;在基板100的第二面100b側,保護層220至少覆蓋形成有天線120的區域。換句話說,保護層210覆蓋晶片110及部分的基板100的第一面100a,保護層220覆蓋天線120及部分的基板100的第二面100b。另外,在基板100具有凹槽200的情況下,在天線裝置的俯視方向上,保護層210的覆蓋面積例如大於凹槽200的面積。藉此,可保護晶片與天線在製造過程中不會受到破壞,也可防止晶片與天線脫落。在本實施例中,保護層210及保護層220例如包括印刷保護層或是印刷材料等。舉例來說,當將天線裝置20用於包裝盒上時,保護層210及保護層220可為用於包裝盒外層的印刷層,即如用於印刷商標、包裝設計等的印刷材料。在其他實施例中,也可僅包含保護層210及保護層220的其中一者,本發明並不以此為限。舉例來說,當天線裝置20以晶片110側朝向包裝盒外側的方式應用於包裝盒上時,可僅形成保護層210;當天線裝置20以天線120側朝向包裝盒外側的方式應用於包裝盒上時,可僅形成保護層220。如此,可簡化製造步驟進而提升製程效率,並藉由保護層使天線裝置隱藏於印刷層的內部,進而可保護晶片或天線不受到損壞。2A to 2D, on the side of the first surface 100a of the substrate 100, the protective layer 210 covers at least the area where the wafer 110 is formed; on the side of the second surface 100b of the substrate 100, the protective layer 220 covers at least the area where the antenna 120 is formed. area. In other words, the protective layer 210 covers the chip 110 and part of the first surface 100a of the substrate 100, and the protective layer 220 covers the antenna 120 and part of the second surface 100b of the substrate 100. In addition, in the case where the substrate 100 has the groove 200, the covering area of the protective layer 210 is, for example, larger than the area of the groove 200 in the plan direction of the antenna device. Thereby, the chip and the antenna can be protected from being damaged during the manufacturing process, and the chip and the antenna can also be prevented from falling off. In this embodiment, the protective layer 210 and the protective layer 220 include, for example, a printed protective layer or a printed material. For example, when the antenna device 20 is used on a packaging box, the protective layer 210 and the protective layer 220 may be printed layers used for the outer layer of the packaging box, that is, printed materials used for printing trademarks, packaging designs, and the like. In other embodiments, only one of the protective layer 210 and the protective layer 220 may be included, and the present invention is not limited thereto. For example, when the antenna device 20 is applied to the packaging box with the chip 110 side facing the outside of the packaging box, only the protective layer 210 may be formed; when the antenna device 20 is applied to the packaging box with the antenna 120 side facing the outside of the packaging box During the application, only the protective layer 220 may be formed. In this way, the manufacturing steps can be simplified to improve the process efficiency, and the antenna device can be hidden inside the printed layer by the protective layer, thereby protecting the chip or the antenna from damage.

圖3A是依照本發明的第三實施例的一種天線裝置的俯視示意圖;圖3B是依照本發明的第三實施例的一種天線裝置的仰視示意圖;圖3C為沿著圖3A中的X1-X2線段的局部剖面示意圖;圖3D為沿著圖3A的Y1-Y2線段的剖面示意圖。在此必須說明的是,圖3A至圖3D的實施例沿用圖2A至圖2D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。3A is a schematic top view of an antenna device according to the third embodiment of the present invention; FIG. 3B is a bottom schematic view of an antenna device according to the third embodiment of the present invention; FIG. 3C is along X1-X2 in FIG. 3A A schematic partial cross-sectional view of the line segment; FIG. 3D is a schematic cross-sectional view along the line Y1-Y2 of FIG. 3A. It must be noted here that the embodiments of FIGS. 3A to 3D follow the element numbers and part of the content of the embodiments of FIGS. 2A to 2D, wherein the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here.

請參照圖3A至圖3D,本實施例之天線裝置30與第二實施例之天線裝置20的不同處為:本實施例之天線裝置30中,基板100在晶片周圍區域還具有溝槽300,藉此降低天線裝置30在製造過程中,晶片受到外力而斷裂等影響。如圖3A所示,溝槽300鄰近晶片110的短邊,且與晶片110相隔一距離。在本實施例中,溝槽300與晶片110相隔的距離例如為2 mm,但本發明不以此為限。需注意的是,雖然圖3A與圖3B所繪示的溝槽數量以2個為例,但本發明不以此為限。在其他實施例中,溝槽數量也可以是1個或大於等於2個。在本實施例中,溝槽300的長度延伸方向例如與晶片110的短邊方向X平行,溝槽300的長度例如大於或等於晶片110的寬度。溝槽300的深度例如小於或等於基板100的厚度,在本實施例中,溝槽300例如貫通基板100。據此,在製造過程中,當產生因基板與晶片之間的延展性不同而造成的晶片位置偏離時,溝槽可發揮緩衝的功能以避免晶片受到拉扯而斷裂,進而提升天線裝置的良率。3A to 3D, the difference between the antenna device 30 of this embodiment and the antenna device 20 of the second embodiment is: in the antenna device 30 of this embodiment, the substrate 100 further has a groove 300 in the area around the chip. This reduces the impact of chip breakage due to external force during the manufacturing process of the antenna device 30. As shown in FIG. 3A, the trench 300 is adjacent to the short side of the wafer 110 and is separated from the wafer 110 by a distance. In this embodiment, the distance between the trench 300 and the wafer 110 is, for example, 2 mm, but the invention is not limited to this. It should be noted that although the number of grooves shown in FIGS. 3A and 3B is two as an example, the present invention is not limited thereto. In other embodiments, the number of grooves may also be one or greater than or equal to two. In this embodiment, the longitudinal extension direction of the trench 300 is, for example, parallel to the short-side direction X of the wafer 110, and the length of the trench 300 is, for example, greater than or equal to the width of the wafer 110. The depth of the trench 300 is, for example, less than or equal to the thickness of the substrate 100. In this embodiment, the trench 300 penetrates the substrate 100, for example. Accordingly, in the manufacturing process, when the wafer position is deviated due to the difference in ductility between the substrate and the wafer, the groove can play a buffer function to prevent the wafer from being pulled and broken, thereby improving the yield of the antenna device. .

圖4A是依照本發明的第四實施例的一種天線裝置的俯視示意圖;圖4B是依照本發明的第四實施例的一種天線裝置的仰視示意圖;圖4C為沿著圖4A中的X1-X2線段的局部剖面示意圖;圖4D為沿著圖4A的Y1-Y2線段的剖面示意圖。在此必須說明的是,圖4A至圖4D的實施例沿用圖2A至圖2D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。為方便說明,圖4A中以虛線表示黏著層430與晶片110的位置。4A is a schematic top view of an antenna device according to the fourth embodiment of the present invention; FIG. 4B is a bottom schematic view of an antenna device according to the fourth embodiment of the present invention; FIG. 4C is along X1-X2 in FIG. 4A A schematic partial cross-sectional view of the line segment; FIG. 4D is a schematic cross-sectional view along the line Y1-Y2 of FIG. 4A. It must be noted here that the embodiment of FIGS. 4A to 4D uses the element numbers and part of the content of the embodiment of FIGS. 2A to 2D, wherein the same or similar numbers are used to denote the same or similar elements, and the same is omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here. For convenience of description, the positions of the adhesive layer 430 and the chip 110 are indicated by dotted lines in FIG. 4A.

請參照圖4A至圖4D,第四實施例以黏著層430(保護黏著層)替代第二實施例之黏著層130。本實施例之天線裝置40的黏著層430與第二實施例之天線裝置20的黏著層130的不同處為黏著層430是位於晶片110上。具體來說,在基板100的第一面100a側,天線裝置40的黏著層430位於晶片110上,且黏著層430例如包覆晶片110。換句話說,黏著層430例如覆蓋晶片110的背面110b及其側面。據此,晶片110可藉由黏著層430固定於基板100上,且可保護晶片110不受到破壞。在一實施例中,在未形成保護層210的情況下,黏著層430可替代保護層210而發揮保護晶片110的作用。4A to 4D, the fourth embodiment replaces the adhesive layer 130 of the second embodiment with an adhesive layer 430 (protective adhesive layer). The difference between the adhesive layer 430 of the antenna device 40 of this embodiment and the adhesive layer 130 of the antenna device 20 of the second embodiment is that the adhesive layer 430 is located on the chip 110. Specifically, on the first surface 100a side of the substrate 100, the adhesive layer 430 of the antenna device 40 is located on the chip 110, and the adhesive layer 430, for example, covers the chip 110. In other words, the adhesive layer 430 covers, for example, the back surface 110b of the chip 110 and the side surface thereof. Accordingly, the chip 110 can be fixed on the substrate 100 by the adhesive layer 430, and the chip 110 can be protected from damage. In one embodiment, when the protective layer 210 is not formed, the adhesive layer 430 can replace the protective layer 210 to protect the chip 110.

另外,在基板100具有凹槽200的情況下,黏著層430例如填滿晶片110與凹槽200之間的間隙,而可將晶片110固定於凹槽200內,進而確保晶片110不會自凹槽200脫落。In addition, when the substrate 100 has the groove 200, the adhesive layer 430 fills the gap between the wafer 110 and the groove 200, for example, and can fix the wafer 110 in the groove 200, thereby ensuring that the wafer 110 will not be self-depressed. The groove 200 falls off.

在本實施例中,相較於傳統的天線裝置(厚度大於100 μm),本發明之天線裝置40的厚度因僅包含基板100與天線120的厚度,故天線裝置40的整體厚度可達小於50 μm的程度。另外,天線印刷時晶片與基板之間的斷差例如3 μm~9 μm,較佳為7 μm。In this embodiment, compared with the conventional antenna device (thickness greater than 100 μm), the thickness of the antenna device 40 of the present invention only includes the thickness of the substrate 100 and the antenna 120, so the overall thickness of the antenna device 40 can be less than 50 μm. The degree of μm. In addition, the gap between the wafer and the substrate during antenna printing is, for example, 3 μm to 9 μm, preferably 7 μm.

以下,將說明依照本發明的第五實施例的一種天線裝置的製造流程。Hereinafter, a manufacturing process of an antenna device according to the fifth embodiment of the present invention will be explained.

圖5A至圖5E是依照本發明的第五實施例的一種天線裝置的製造方法的流程圖。在此必須說明的是,圖5A至圖5E的實施例沿用圖1A至圖1D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。在本實施例中,是以黏著層130在基板投影方向上的面積大於晶片110在基板投影方向上的面積為例進行說明。5A to 5E are flowcharts of a manufacturing method of an antenna device according to a fifth embodiment of the present invention. It must be noted here that the embodiment of FIGS. 5A to 5E follows the element numbers and part of the content of the embodiment of FIGS. 1A to 1D, wherein the same or similar numbers are used to denote the same or similar elements, and the same is omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here. In this embodiment, the description is made by taking an example that the area of the adhesive layer 130 in the projection direction of the substrate is larger than the area of the wafer 110 in the projection direction of the substrate.

請參照圖5A,提供基板100。接著,對應於後續步驟中晶片預定形成區域,在基板100的第一面100a上形成黏著層130。Referring to FIG. 5A, a substrate 100 is provided. Next, corresponding to the predetermined formation area of the wafer in the subsequent steps, an adhesive layer 130 is formed on the first surface 100 a of the substrate 100.

請參照圖5B,在基板100的第一面100a上形成印刷層500。在本實施例中,印刷層500還具有開口502,以暴露出部分的黏著層130。換句話說,印刷層500覆蓋黏著層130的表面130a的一部分。在本實施例中,黏著層130與印刷層500的開口502共同形成凹槽的形狀,即開口502所暴露出的黏著層130的表面130a例如為凹槽的底部,開口502的側壁例如為凹槽的側壁。在本實施例中,印刷層500的材料例如為用於印刷商標、包裝設計等的印刷油墨。Referring to FIG. 5B, a printing layer 500 is formed on the first surface 100a of the substrate 100. In this embodiment, the printing layer 500 further has an opening 502 to expose a part of the adhesive layer 130. In other words, the printed layer 500 covers a part of the surface 130a of the adhesive layer 130. In this embodiment, the adhesive layer 130 and the opening 502 of the printing layer 500 jointly form a groove shape, that is, the surface 130a of the adhesive layer 130 exposed by the opening 502 is, for example, the bottom of the groove, and the sidewall of the opening 502 is, for example, a recess. The sidewall of the groove. In this embodiment, the material of the printing layer 500 is, for example, printing ink used for printing trademarks, packaging designs, and the like.

請參照圖5C,對應於晶片上接墊的預定形成區域,例如藉由模具沖切或雷射等方法形成基板100的通孔102及黏著層130的開孔132中的至少一者。在本實施例中,通孔102與開孔132例如可以在上述製程中同時形成,但本發明不限於此。Referring to FIG. 5C, corresponding to the predetermined formation area of the pads on the chip, at least one of the through holes 102 of the substrate 100 and the openings 132 of the adhesive layer 130 is formed by die cutting or laser, for example. In this embodiment, the through hole 102 and the opening 132 may be formed simultaneously in the above-mentioned manufacturing process, for example, but the present invention is not limited to this.

請參照圖5D,將晶片110放置在黏著層130上,且晶片110的接墊112位於黏著層130的開孔132內。換句話說,晶片110設置於印刷層500的開口502內。在本實施例中,印刷層500與黏著層130共同形成凹槽,且凹槽的深度實質上與開口502的深度相同。舉例來說,開口502的深度例如設置為10 μm~20 μm,較佳為10 μm~15 μm。印刷層500的表面500a與晶片110的背面110b之間的水平高度差例如設置為7 μm以下。在一實施例中,開口502的深度例如設置為等於晶片110的厚度。具體而言,印刷層500的表面500a與黏著層130的表面130a之間的距離實質上等於晶片110的主動面110a與晶片110的背面110b之間的距離。換句話說,印刷層500的表面500a與晶片110的背面110b可為共平面。在此,印刷層500的表面500a與晶片110的背面110b之間的水平高度差位於標準偏差範圍內,都可視為本文所述之「共平面」,其中標準偏差範圍例如±25%內。Referring to FIG. 5D, the chip 110 is placed on the adhesive layer 130, and the pad 112 of the chip 110 is located in the opening 132 of the adhesive layer 130. In other words, the wafer 110 is disposed in the opening 502 of the printing layer 500. In this embodiment, the printed layer 500 and the adhesive layer 130 jointly form a groove, and the depth of the groove is substantially the same as the depth of the opening 502. For example, the depth of the opening 502 is set to, for example, 10 μm to 20 μm, preferably 10 μm to 15 μm. The level difference between the surface 500a of the printed layer 500 and the back surface 110b of the wafer 110 is set to, for example, 7 μm or less. In an embodiment, the depth of the opening 502 is set equal to the thickness of the wafer 110, for example. Specifically, the distance between the surface 500 a of the printing layer 500 and the surface 130 a of the adhesive layer 130 is substantially equal to the distance between the active surface 110 a of the chip 110 and the back surface 110 b of the chip 110. In other words, the surface 500a of the printing layer 500 and the back surface 110b of the wafer 110 may be coplanar. Here, the level difference between the surface 500a of the printed layer 500 and the back surface 110b of the wafer 110 is within the standard deviation range, and both can be regarded as "coplanar" as described herein, where the standard deviation range is, for example, within ±25%.

請參照圖5E,在基板100的第二面100b上形成天線120。在本實施例中,天線120的第一接合線段122與第二接合線段124分別填充通孔102與開孔132,而接合至晶片110的接墊112。至此,已大致完成本實施例的天線裝置50的製作。Referring to FIG. 5E, an antenna 120 is formed on the second surface 100b of the substrate 100. In this embodiment, the first bonding wire segment 122 and the second bonding wire segment 124 of the antenna 120 fill the through hole 102 and the opening 132 respectively, and are bonded to the pad 112 of the chip 110. So far, the fabrication of the antenna device 50 of this embodiment has been roughly completed.

基於上述,藉由在基板設置如上的印刷層,不僅可降低天線裝置50的整體厚度,也可保護晶片在製造過程中不會受到破壞而影響良率、或是可以使得天線與晶片的接合較不受接合面的地貌影響,避免天線產生斷線等情形。Based on the above, by providing the above printed layer on the substrate, not only the overall thickness of the antenna device 50 can be reduced, but also the chip can be protected from damage during the manufacturing process to affect the yield, or the bonding between the antenna and the chip can be improved. It is not affected by the topography of the joint surface and avoids disconnection of the antenna.

圖6A是依照本發明的第六實施例的一種天線裝置的俯視示意圖;圖6B是依照本發明的第六實施例的一種天線裝置的仰視示意圖;圖6C為沿著圖6A中的X1-X2線段的局部剖面示意圖;圖6D為沿著圖6A的Y1-Y2線段的剖面示意圖。在此必須說明的是,圖6A至圖6D的實施例沿用圖4A至圖4D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。6A is a schematic top view of an antenna device according to the sixth embodiment of the present invention; FIG. 6B is a bottom schematic view of an antenna device according to the sixth embodiment of the present invention; FIG. 6C is along X1-X2 in FIG. 6A A schematic partial cross-sectional view of the line segment; FIG. 6D is a schematic cross-sectional view along the line Y1-Y2 of FIG. 6A. It must be noted here that the embodiment of FIGS. 6A to 6D uses the element numbers and part of the content of the embodiment of FIGS. 4A to 4D, wherein the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here.

請參照圖6A至圖6D,本實施例之天線裝置60與第四實施例之天線裝置40的不同處為基板100在其第二面100b側還具有凹槽600(第二凹槽),且保護層620替代第四實施例之保護層220。6A to 6D, the difference between the antenna device 60 of this embodiment and the antenna device 40 of the fourth embodiment is that the substrate 100 further has a groove 600 (second groove) on the second surface 100b side thereof, and The protective layer 620 replaces the protective layer 220 of the fourth embodiment.

在本實施例中,凹槽600與凹槽200的不同處為可容置天線120,且天線120設置於凹槽600的底面600b上。請參照圖6D,在長邊方向Y上,凹槽600的側壁與基板100的第二面100b的延伸方向之間具有夾角θ2。舉例來說,夾角θ2可為銳角,但本發明不以此為限。In this embodiment, the difference between the groove 600 and the groove 200 is that the antenna 120 can be accommodated, and the antenna 120 is disposed on the bottom surface 600 b of the groove 600. 6D, in the longitudinal direction Y, there is an included angle θ2 between the sidewall of the groove 600 and the extending direction of the second surface 100b of the substrate 100. For example, the included angle θ2 may be an acute angle, but the invention is not limited to this.

在本實施例中,基板100的通孔102例如設置於凹槽200與凹槽600之間的基板100內。In this embodiment, the through hole 102 of the substrate 100 is provided in the substrate 100 between the groove 200 and the groove 600, for example.

圖6D中,是以凹槽600的深度與天線120的高度實質上相同為例進行說明。在其他實施例中,凹槽600的深度不限於與天線120的厚度一致,可視需求調整,本發明並不以此為限。舉例來說,凹槽600的深度例如為5 μm~15 μm,較佳為10 μm~12 μm。在本實施例中,凹槽600的深度可以天線120的表面實質上切齊於基板100的第二面100b的方式來進行設置。換句話說,天線120的表面與基板100的第二面100b可為共平面。在此,天線120的表面與基板100的第二面100b之間的水平高度差位於標準偏差範圍內,都可視為本文所述之「共平面」,其中標準偏差範圍例如±30%內。In FIG. 6D, the description is made by taking an example in which the depth of the groove 600 and the height of the antenna 120 are substantially the same. In other embodiments, the depth of the groove 600 is not limited to be consistent with the thickness of the antenna 120, and can be adjusted according to requirements, and the present invention is not limited thereto. For example, the depth of the groove 600 is, for example, 5 μm to 15 μm, preferably 10 μm to 12 μm. In this embodiment, the depth of the groove 600 can be set in such a way that the surface of the antenna 120 is substantially aligned with the second surface 100 b of the substrate 100. In other words, the surface of the antenna 120 and the second surface 100b of the substrate 100 may be coplanar. Here, the level difference between the surface of the antenna 120 and the second surface 100b of the substrate 100 is within the standard deviation range, which can be regarded as "coplanar" as described herein, where the standard deviation range is, for example, within ±30%.

在其他實施例中,凹槽600例如也可應用於前述實施例中,本發明不限於此。舉例來說,第二實施例之天線裝置20在基板100的第二面100b側也可具有凹槽600。In other embodiments, the groove 600 may also be applied to the foregoing embodiments, and the present invention is not limited thereto. For example, the antenna device 20 of the second embodiment may also have a groove 600 on the side of the second surface 100 b of the substrate 100.

在本實施例中,保護層620與第四實施例之保護層220的不同處為:保護層620在俯視方向上的覆蓋面積至少大於凹槽600的面積。藉此,可保護天線在製造過程中不會受到破壞,也可防止天線自凹槽600脫落。In this embodiment, the difference between the protective layer 620 and the protective layer 220 of the fourth embodiment is that the covering area of the protective layer 620 in the top view direction is at least larger than the area of the groove 600. Thereby, the antenna can be protected from being damaged during the manufacturing process, and the antenna can also be prevented from falling off from the groove 600.

在本實施例中,相較於傳統的天線裝置(厚度大於100 μm),本發明之天線裝置60的厚度因僅包含基板100的厚度,故天線裝置60的整體厚度可達小於30 μm的程度。另外,天線印刷時晶片與基板之間的斷差例如0 μm~7 μm,較佳為0 μm。In this embodiment, compared with the conventional antenna device (thickness greater than 100 μm), the thickness of the antenna device 60 of the present invention only includes the thickness of the substrate 100, so the overall thickness of the antenna device 60 can be less than 30 μm. . In addition, the gap between the wafer and the substrate during antenna printing is, for example, 0 μm to 7 μm, preferably 0 μm.

以下,將例示說明可應用於上述實施例中接墊的實施形態以及可應用於晶片的電路結構,但本發明並不限定於以下的實施形態。Hereinafter, embodiments that can be applied to the pads in the above-mentioned embodiments and the circuit structure that can be applied to a chip will be exemplified, but the present invention is not limited to the following embodiments.

圖7A是依照本發明的第七實施例的晶片的上視示意圖;圖7B是依照本發明的第八實施例的晶片的上視示意圖;圖8是依照本發明的第九實施例的晶片的電路結構示意圖。在此必須說明的是,圖7A、圖7B、圖8的實施例沿用圖1A至圖1D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。7A is a schematic top view of a wafer according to the seventh embodiment of the present invention; FIG. 7B is a schematic top view of a wafer according to the eighth embodiment of the present invention; FIG. 8 is a schematic view of a wafer according to the ninth embodiment of the present invention Schematic diagram of the circuit structure. It must be noted here that the embodiment of FIG. 7A, FIG. 7B, and FIG. 8 use the element numbers and part of the content of the embodiment of FIG. 1A to FIG. 1D, wherein the same or similar reference numbers are used to indicate the same or similar elements, and The description of the same technical content is omitted. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here.

請參照圖7A,晶片110的接墊例如包括多個接墊LA1及多個接墊LB1,其中在晶片110的長邊方向Y上,多個接墊LA1位於晶片110的一短邊上,且多個接墊LB1位於晶片110的另一短邊上。此處,接墊LA1及接墊LB1的結構類似於前述任一實施例中的接墊112,於此不再贅述。需注意的是,雖然圖7A所繪示接墊LA1與接墊LB1的數量分別以2個為例,但本發明不以此為限。在其他實施例中,接墊LA1與接墊LB1的數量也可以是大於等於2個。7A, the pads of the chip 110 include, for example, a plurality of pads LA1 and a plurality of pads LB1, wherein in the long side direction Y of the chip 110, the plurality of pads LA1 are located on a short side of the chip 110, and The multiple pads LB1 are located on the other short side of the chip 110. Here, the structure of the pad LA1 and the pad LB1 is similar to the pad 112 in any of the foregoing embodiments, and will not be repeated here. It should be noted that although the number of the pad LA1 and the number of the pad LB1 shown in FIG. 7A is two as an example, the present invention is not limited thereto. In other embodiments, the number of pads LA1 and LB1 can also be greater than or equal to two.

在一實施例中,對應於多個接墊LA1及多個接墊LB1,而可在基板中形成同等數量的通孔,且通孔在基板上的投影面積例如大於接墊LA1或接墊LB1的投影面積。舉例來說,對應於2個接墊LA1及2個接墊LB1,而形成4個通孔,並暴露出接墊LA1及接墊LB1,但本發明不限於此。藉此,天線120的兩端分別透過通孔接合至多個接墊LA1及多個接墊LB1,而電性連接至晶片110內的驅動電路,而可使接墊LA1及接墊LB1的其中一者作為輸入端、另一者作為輸出端。In one embodiment, corresponding to the plurality of pads LA1 and the plurality of pads LB1, the same number of through holes can be formed in the substrate, and the projected area of the through holes on the substrate is, for example, larger than that of the pad LA1 or the pad LB1 The projected area. For example, corresponding to two pads LA1 and two pads LB1, four through holes are formed and the pads LA1 and LB1 are exposed, but the invention is not limited to this. Thereby, both ends of the antenna 120 are respectively connected to the plurality of pads LA1 and the plurality of pads LB1 through the through holes, and are electrically connected to the driving circuit in the chip 110, so that one of the pads LA1 and the pads LB1 can be made One is used as the input and the other is used as the output.

請參照圖7B,晶片110的接墊例如包括接墊LA2及接墊LB2,其中在晶片110的長邊方向Y上,接墊LA2位於晶片110的一短邊上,且接墊LB2位於晶片110的另一短邊上。接墊LA2及接墊LB2例如為沿著晶片110的短邊方向X延伸的長條狀接墊。舉例來說,接墊LA2及接墊LB2可為長度小於晶片110的寬度的長條狀接墊。如此一來,可增加晶片110的接墊112與天線120之間的接觸面積。Referring to FIG. 7B, the pads of the chip 110 include, for example, a pad LA2 and a pad LB2. In the long-side direction Y of the chip 110, the pad LA2 is located on a short side of the chip 110, and the pad LB2 is located on the chip 110 On the other short side. The pad LA2 and the pad LB2 are, for example, elongated pads extending along the short side direction X of the chip 110. For example, the pad LA2 and the pad LB2 may be elongated pads with a length less than the width of the chip 110. In this way, the contact area between the pad 112 of the chip 110 and the antenna 120 can be increased.

在一實施例中,對應於接墊LA2及接墊LB2,而可在基板中形成相同形狀的通孔,且通孔在基板上的投影面積例如大於接墊LA2或接墊LB2的投影面積。舉例來說,對應於呈長條狀的接墊LA2及接墊LB2,而形成呈長條狀的通孔,並暴露出接墊LA2及接墊LB2,但本發明不限於此。藉此,天線120的兩端分別透過通孔接合至接墊LA2及接墊LB2,而電性連接至晶片110內的驅動電路,而可使接墊LA2及接墊LB2的其中一者作為輸入端、另一者作為輸出端。In one embodiment, corresponding to the pad LA2 and the pad LB2, through holes of the same shape can be formed in the substrate, and the projected area of the through hole on the substrate is, for example, larger than the projected area of the pad LA2 or the pad LB2. For example, corresponding to the elongated pad LA2 and the pad LB2, a elongated through hole is formed, and the pad LA2 and the pad LB2 are exposed, but the present invention is not limited thereto. Thereby, both ends of the antenna 120 are respectively connected to the pad LA2 and the pad LB2 through the through holes, and are electrically connected to the driving circuit in the chip 110, so that one of the pad LA2 and the pad LB2 can be used as an input The other is the output terminal.

請參照圖7,晶片110上的接墊LA例如為上述多個接墊LA1或接墊LA2,接墊LB例如為上述多個接墊LB1或接墊LB2,但本發明不限於此。接墊LA及接墊LB的其中一者例如可作為輸入端、另一者例如可作為輸出端。在本實施例中,電路結構700例如藉由接墊LA及接墊LB耦接晶片110,且與電容C並聯。電容C例如為調諧電容器(Tuning Capacitor)。在一實施例中,電路結構700可包括射頻區塊710及數位區塊720。射頻區塊710例如包括整流器(Rectifier)712與調變器(Modulator)714等,數位區塊720例如包括時脈產生器(Clock Generator)722、記憶體陣列(Memory Array)724與數位控制器(Digital Controller)726等,但本發明不限於此。在本實施例中,例如將接墊LA作為輸入端以接收來自電路結構700的輸入信號並將接墊LB作為輸出端以輸出信號至電路結構700。在透過天線接收信號後,此信號可經由接墊LB輸出至電路結構700,並且電路結構700藉由射頻區塊710及數位區塊720對此信號進行整流、調變、寫入或讀取等處理。在處理完信號後,電路結構700可將處理後的信號輸出至接墊LA。Referring to FIG. 7, the pads LA on the chip 110 are, for example, the above-mentioned multiple pads LA1 or LA2, and the pads LB are, for example, the above-mentioned multiple pads LB1 or LB2, but the present invention is not limited thereto. One of the pad LA and the pad LB may be used as an input terminal, and the other may be used as an output terminal, for example. In this embodiment, the circuit structure 700 is coupled to the chip 110 via the pad LA and the pad LB, for example, and is connected in parallel with the capacitor C. The capacitor C is, for example, a tuning capacitor (Tuning Capacitor). In an embodiment, the circuit structure 700 may include a radio frequency block 710 and a digital block 720. The radio frequency block 710 includes, for example, a rectifier (Rectifier) 712 and a modulator (Modulator) 714, and the digital block 720 includes, for example, a clock generator (Clock Generator) 722, a memory array (Memory Array) 724, and a digital controller ( Digital Controller) 726, etc., but the present invention is not limited to this. In this embodiment, for example, the pad LA is used as the input terminal to receive the input signal from the circuit structure 700 and the pad LB is used as the output terminal to output the signal to the circuit structure 700. After receiving the signal through the antenna, the signal can be output to the circuit structure 700 through the pad LB, and the circuit structure 700 uses the radio frequency block 710 and the digital block 720 to rectify, modulate, write or read the signal, etc. deal with. After the signal is processed, the circuit structure 700 can output the processed signal to the pad LA.

以下,將說明依照本發明一實施例的一種天線裝置的製造流程,其中下述內容是以捲對捲(roll-to-roll)製程進行說明,但本發明不限於此。Hereinafter, a manufacturing process of an antenna device according to an embodiment of the present invention will be described. The following content is described in a roll-to-roll process, but the present invention is not limited to this.

圖9A是依照本發明的第十實施例的一種天線裝置的製造方法的流程圖;圖9B為圖9A的製造方法的局部立體示意圖。9A is a flowchart of a manufacturing method of an antenna device according to a tenth embodiment of the present invention; FIG. 9B is a partial perspective view of the manufacturing method of FIG. 9A.

請參照圖9A與圖9B,基板準備步驟包括步驟S100、步驟S102、步驟S104、步驟S106、步驟S108等。9A and 9B, the substrate preparation steps include step S100, step S102, step S104, step S106, step S108, and so on.

在步驟S100中,藉由一進料滾筒將基板(原物料基板)輸入至印刷設備中。在本實施例中,基板例如紙、聚乙烯對苯二甲酸酯、聚氯乙烯、塑膠膜、或其他適宜的材料等,本發明並不以此為限。舉例來說,當欲將天線裝置用於包裝盒(如牛奶盒、紙袋、餅乾袋等)上時,基板可使用與用來形成包裝盒的基材(如紙、牛皮紙、塑膠等)相同的材料。In step S100, the substrate (raw material substrate) is input into the printing device by a feed roller. In this embodiment, the substrate is, for example, paper, polyethylene terephthalate, polyvinyl chloride, plastic film, or other suitable materials, and the present invention is not limited thereto. For example, when the antenna device is to be used on a packaging box (such as milk cartons, paper bags, biscuit bags, etc.), the substrate can be the same as the substrate used to form the packaging box (such as paper, kraft paper, plastic, etc.) material.

在步驟S102中,對應於後續步驟中晶片預定形成區域,在基板上印刷對位記號802並形成黏著層810。在本實施例中,黏著層810例如熱熔膠或其他適宜的黏著材料。在一些實施例中,黏著層810還可具有凹槽(例如圖1C之凹槽134)。In step S102, the alignment mark 802 is printed on the substrate and the adhesive layer 810 is formed corresponding to the predetermined formation area of the wafer in the subsequent step. In this embodiment, the adhesive layer 810 is, for example, hot melt adhesive or other suitable adhesive materials. In some embodiments, the adhesive layer 810 may further have a groove (for example, the groove 134 of FIG. 1C).

在一些實施例中,可以在形成黏著層810之前,在基板中形成凹槽。舉例來說,可在基板的後續欲承載晶片的一面中對應於晶片的預定形成區域形成如圖2A之凹槽200;另外,也可進一步在基板的後續欲承載天線的另一面中形成如圖6B之凹槽600,有關此部分的詳細說明可參照上述凹槽200與凹槽600的說明,在此不再贅述。在形成如圖2A之凹槽200般的凹槽的情況下,例如將黏著層810形成於該凹槽內。形成凹槽的方法例如以鋼印、沖壓等方式薄化晶片或天線的預定形成區域的基板厚度,而於該預定形成區域處形成可容置晶片或天線的凹槽,但本發明不限於此。In some embodiments, a groove may be formed in the substrate before the adhesion layer 810 is formed. For example, a groove 200 as shown in FIG. 2A can be formed on the subsequent side of the substrate to be loaded with the chip corresponding to the predetermined formation area of the chip; in addition, the groove 200 as shown in Figure 2A can also be further formed on the other side of the substrate to be subsequently loaded with the antenna. For the groove 600 of 6B, for the detailed description of this part, please refer to the description of the groove 200 and the groove 600, which will not be repeated here. In the case of forming a groove like the groove 200 of FIG. 2A, for example, an adhesive layer 810 is formed in the groove. The method of forming the groove is, for example, thinning the substrate thickness of the predetermined formation area of the chip or the antenna by stamping, stamping, etc., and forming a groove capable of accommodating the chip or the antenna at the predetermined formation area, but the present invention is not limited to this.

接著,在步驟S104中,乾燥黏著層810,使黏著層810固化。在本實施例中,乾燥黏著層810的方法並無特別限定,只要不會因後續製程而脫落即可。Next, in step S104, the adhesive layer 810 is dried to cure the adhesive layer 810. In this embodiment, the method of drying the adhesive layer 810 is not particularly limited, as long as it does not fall off due to subsequent manufacturing processes.

在步驟S106中,例如藉由沖孔製程等在基板中形成通孔804。通孔804貫穿整個基板與黏著層810,且對應於晶片上接墊的預定形成區域。換句話說,黏著層810具有分別對應於通孔804的開孔,使得後續在放置晶片時,黏著層810可暴露出晶片的接墊。需注意的是,雖然圖9B所繪示通孔數量以4個為例且位於黏著層810的四個角附近,但可依據接墊的型態調整通孔數量及其位置,本發明不以此為限。在一實施例中,在基板形成有凹槽的情況下,通孔804與凹槽的側壁之間的距離的下限較佳為1 mm,更佳為1.5 mm。通孔804與凹槽的側壁之間的距離的上限並無特別限定,只要大於0 mm即可。In step S106, a through hole 804 is formed in the substrate by, for example, a punching process or the like. The through hole 804 penetrates the entire substrate and the adhesive layer 810 and corresponds to the predetermined formation area of the pad on the chip. In other words, the adhesive layer 810 has openings respectively corresponding to the through holes 804, so that when the chip is subsequently placed, the adhesive layer 810 can expose the pads of the chip. It should be noted that although the number of through holes shown in FIG. 9B is 4 as an example and they are located near the four corners of the adhesive layer 810, the number and position of the through holes can be adjusted according to the type of the pad. This is limited. In an embodiment, when the substrate is formed with a groove, the lower limit of the distance between the through hole 804 and the side wall of the groove is preferably 1 mm, more preferably 1.5 mm. The upper limit of the distance between the through hole 804 and the side wall of the groove is not particularly limited, as long as it is greater than 0 mm.

在一實施例中,也可在沖孔製程中例如同時在基板中形成溝槽(未繪示)、或例如藉由裁切基板以形成溝槽(未繪示)。對應於後續步驟中晶片預定形成區域,溝槽的長度例如大於或等於晶片預定形成區域的寬度,且溝槽的深度例如小於或等於基板的厚度。在鄰近晶片預定形成區域的短邊,溝槽與晶片預定形成區域相隔一距離。舉例來說,溝槽與晶片預定形成區域之間的距離約為2 mm。溝槽的長度延伸方向例如與收料滾筒900的滾動方向平行,換句話說,溝槽的長度延伸方向例如與基板的移動方向平行。據此,在後續製程中,當產生因基板與晶片之間的延展性不同而造成的晶片位置偏離時,溝槽可發揮緩衝的功能以避免晶片受到拉扯而斷裂,進而提升天線裝置的良率。In an embodiment, it is also possible to form a trench (not shown) in the substrate at the same time during the punching process, or to form the trench (not shown) by cutting the substrate, for example. Corresponding to the predetermined formation area of the wafer in the subsequent steps, the length of the groove is, for example, greater than or equal to the width of the wafer predetermined formation area, and the depth of the groove is, for example, less than or equal to the thickness of the substrate. On the short side adjacent to the predetermined formation area of the wafer, the groove is spaced apart from the predetermined formation area of the wafer. For example, the distance between the groove and the predetermined formation area of the wafer is about 2 mm. The longitudinal extension direction of the groove is, for example, parallel to the rolling direction of the take-up drum 900, in other words, the longitudinal extension direction of the groove is, for example, parallel to the moving direction of the substrate. Accordingly, in the subsequent manufacturing process, when the wafer position deviation caused by the difference in ductility between the substrate and the wafer occurs, the groove can play a buffer function to prevent the wafer from being pulled and broken, thereby improving the yield of the antenna device. .

然後,在步驟S108中,藉由收料滾筒900捲取具有對位記號802、通孔804及黏著層810的基板800(半成品基板),並於接合設備中進行後續的步驟。Then, in step S108, the substrate 800 (semi-finished substrate) with the alignment mark 802, the through hole 804 and the adhesive layer 810 is taken up by the take-up roller 900, and the subsequent steps are performed in the bonding equipment.

在一些實施例中,也可在步驟S104與步驟S106之間,藉由如圖5A至圖5E所示的製造流程,在基板上形成具有開口的印刷層,且該開口例如暴露出部分的黏著層810。In some embodiments, between step S104 and step S106, through the manufacturing process shown in FIGS. 5A to 5E, a printed layer with an opening is formed on the substrate, and the opening exposes, for example, part of the adhesive层810.

圖10A與圖10B是圖9A與圖9B的下一道步驟的示意圖。為方便說明,圖10B中以虛線表示通孔804的位置。10A and 10B are schematic diagrams of the next step of FIGS. 9A and 9B. For ease of description, the position of the through hole 804 is indicated by a dotted line in FIG. 10B.

請參照圖10A與圖10B,晶片放置步驟包括步驟S110、步驟S112、步驟S114、步驟S116、步驟S118等。10A and 10B, the wafer placement step includes step S110, step S112, step S114, step S116, step S118, and so on.

在步驟S110中,將於步驟S108中捲取的基板800以表面800a朝上的方式輸入至接合設備中,如此使基板800的表面800a面向後續用於放置晶片的構件。在一實施例中,接合設備例如為覆晶封裝接合機(Flip Chip Bonding Machine)。In step S110, the substrate 800 to be wound up in step S108 is input into the bonding device with the surface 800a facing upwards, so that the surface 800a of the substrate 800 faces the subsequent member for placing the wafer. In one embodiment, the bonding equipment is, for example, a flip chip bonding machine (Flip Chip Bonding Machine).

在步驟S112中,拾取例如於晶圓上的晶片820並翻轉180度,使晶片820的接墊(未繪示)朝下。晶片820可包括兩個以上的接墊,其中接墊設置於晶片820的主動面上。舉例來說,接墊可為如圖7A所示的接墊LA1與接墊LB1、或如圖7B所示的接墊LA2與接墊LB2等,可依據設計需求調整接墊的配置,本發明並不以此為限。在本實施例中,晶片820可為以塑膠為基底的積體電路元件,即為將主動元件與電路形成於如塑膠等可撓式基板上的晶片型態。晶片820的主動面為包括薄膜電晶體TFT等積體電路的形成表面,接墊可作為電性連接至晶片820內部積體電路的接點。接墊的材料包括導電材料,例如金、銀、銅、鋁、鉬、鈦或其他金屬或包含前述金屬的合金。In step S112, pick up the chip 820 on the wafer and turn it over 180 degrees so that the pads (not shown) of the chip 820 face down. The chip 820 may include more than two pads, wherein the pads are disposed on the active surface of the chip 820. For example, the pads may be the pads LA1 and LB1 as shown in FIG. 7A, or the pads LA2 and LB2 as shown in FIG. 7B, etc. The configuration of the pads can be adjusted according to design requirements. The present invention Not limited to this. In this embodiment, the chip 820 may be an integrated circuit component based on plastic, that is, a chip type in which active components and circuits are formed on a flexible substrate such as plastic. The active surface of the chip 820 is the formation surface of integrated circuits including thin film transistors, TFTs, etc., and the pads can be used as contacts that are electrically connected to the internal integrated circuits of the chip 820. The material of the pad includes conductive materials, such as gold, silver, copper, aluminum, molybdenum, titanium, or other metals or alloys containing the foregoing metals.

在步驟S114中,將晶片820以主動面面向基板800的方式放置在基板800的表面800a上,且晶片820的接墊對應於通孔804。換句話說,通孔804暴露出晶片820的接墊,而可於後續製程中進行電性連接。In step S114, the chip 820 is placed on the surface 800a of the substrate 800 with the active surface facing the substrate 800, and the pads of the chip 820 correspond to the through holes 804. In other words, the through holes 804 expose the pads of the chip 820 and can be electrically connected in the subsequent manufacturing process.

在一實施例中,例如以晶片820的短邊方向X與基板的移動方向之間具有一夾角的方式,將晶片820放置在黏著層810上。晶片820的短邊方向X與基板的移動方向之間的夾角為小於或等於45度,較佳為0度。換句話說,晶片820的短邊方向X與基板的移動方向較佳為彼此平行。由於收料滾筒與晶片的接觸面積越大,越容易造成後續在捲取晶片時晶片的彎曲角度過大、使收料滾筒與晶片表面之間的摩擦力過大、或者增大晶片受到收料滾筒撞擊的影響等問題,進而造成晶片的損壞。然而,藉由以晶片820的短邊方向X與基板的移動方向之間具有夾角的方式放置晶片820,使晶片在滾動方向上的受力路徑較短、晶片的彎曲角度較小,而可大幅度降低晶片損壞的機會,進而改善良率。相對於此,若晶片820的短邊方向X與基板的移動方向彼此垂直,則測得的良率極低,例如為小於10%。In one embodiment, for example, the chip 820 is placed on the adhesive layer 810 in such a way that there is an angle between the short side direction X of the chip 820 and the moving direction of the substrate. The angle between the short-side direction X of the wafer 820 and the moving direction of the substrate is less than or equal to 45 degrees, preferably 0 degrees. In other words, the short-side direction X of the wafer 820 and the moving direction of the substrate are preferably parallel to each other. Because the larger the contact area between the receiving roller and the wafer, the easier it is to cause the subsequent bending angle of the wafer during the subsequent winding of the wafer, causing the friction between the receiving roller and the wafer surface to be too large, or increasing the impact of the wafer by the receiving roller And other issues, which in turn caused damage to the chip. However, by placing the chip 820 with an angle between the short-side direction X of the chip 820 and the moving direction of the substrate, the force path of the chip in the rolling direction is shorter, and the bending angle of the chip is smaller, which can be larger. This greatly reduces the chance of chip damage, thereby improving yield. In contrast, if the short-side direction X of the wafer 820 and the moving direction of the substrate are perpendicular to each other, the measured yield rate is extremely low, for example, less than 10%.

在一些實施例中,在基板800的表面800a還具有凹槽的情況下,晶片820例如放置於該凹槽內。據此,不僅可降低後續形成的天線裝置整體的厚度,也可避免因晶片凸出基板而容易在後續製程中破壞晶片而影響良率等問題。In some embodiments, when the surface 800a of the substrate 800 further has a groove, the wafer 820 is placed in the groove, for example. According to this, not only can the thickness of the antenna device to be formed later be reduced, but also problems such as the wafer protruding from the substrate can be easily damaged in the subsequent manufacturing process, which affects the yield.

接著,在步驟S116中,壓合固定晶片820。在本實施例中,壓合固定的方式例如為熱壓固定,以加熱黏著層810而使其熔融後,使晶片820經由黏著層810固定於基板800上。Next, in step S116, the wafer 820 is pressed and fixed. In this embodiment, the method of pressing and fixing is, for example, hot pressing. After the adhesive layer 810 is heated and melted, the wafer 820 is fixed on the substrate 800 via the adhesive layer 810.

然後,在步驟S118中,藉由收料滾筒900捲取載置有晶片820的基板800,並於印刷設備中進行後續的步驟。Then, in step S118, the substrate 800 on which the wafer 820 is placed is taken up by the take-up roller 900, and the subsequent steps are performed in the printing equipment.

圖11A與圖11B是圖10A與圖10B的下一道步驟的示意圖。為方便說明,圖11B中以虛線表示通孔804的位置。11A and 11B are schematic diagrams of the next step of FIGS. 10A and 10B. For the convenience of description, the position of the through hole 804 is indicated by a dotted line in FIG. 11B.

請參照圖11A與圖11B,天線形成步驟包括步驟S120、步驟S122、步驟S124、步驟S126等。Referring to FIG. 11A and FIG. 11B, the antenna formation steps include step S120, step S122, step S124, step S126, and so on.

在步驟S120中,將於步驟S118中捲取的基板800,即載置有晶片820的基板800,以表面800b朝上的方式輸入至印刷設備中,如此使基板800的表面800b面向後續用於形成天線的構件。In step S120, the substrate 800 that will be rolled up in step S118, that is, the substrate 800 on which the wafer 820 is placed, is input into the printing device with the surface 800b facing upwards, so that the surface 800b of the substrate 800 faces the subsequent use The component that forms the antenna.

在步驟S122中,印刷天線830。在本實施例中,天線830相對於晶片820而形成於基板800的表面800b上,且天線830例如為螺旋狀線圈或其他形狀。在本實施例中,天線830的材料例如為導電性的銀奈米油墨、石墨烯油墨或其他導電材料。印刷天線830的方法例如包括凸版印刷(Letterpress Printing)、凹版印刷(Gravure Printing)、網版印刷(Screen Printing)、微影(Lithography)、或熱轉印(thermal transfer)等方法,但本發明不限於此。In step S122, the antenna 830 is printed. In this embodiment, the antenna 830 is formed on the surface 800b of the substrate 800 relative to the chip 820, and the antenna 830 is, for example, a helical coil or other shapes. In this embodiment, the material of the antenna 830 is, for example, conductive silver nano ink, graphene ink, or other conductive materials. Methods of printing the antenna 830 include, for example, Letterpress Printing, Gravure Printing, Screen Printing, Lithography, or Thermal Transfer. However, the present invention does not Limited to this.

天線830的兩端分別經由通孔804電性連接至晶片820的接墊。在天線裝置的俯視方向上,在天線830經由通孔804與晶片820電性連接的位置,天線830在基板800上的投影面積例如大於通孔804在基板800上的投影面積。換句話說,天線830例如填滿整個通孔804,並覆蓋位於通孔804的周圍處的基板800的表面800b。Both ends of the antenna 830 are electrically connected to the pads of the chip 820 through the through holes 804, respectively. In the top view of the antenna device, where the antenna 830 is electrically connected to the chip 820 via the through hole 804, the projected area of the antenna 830 on the substrate 800 is, for example, larger than the projected area of the through hole 804 on the substrate 800. In other words, the antenna 830 fills the entire through hole 804, and covers the surface 800b of the substrate 800 located around the through hole 804, for example.

另一方面,通孔804在基板800上的投影面積例如大於晶片820的接墊在基板800上的投影面積。藉此,當天線830填滿整個通孔804時,可確保天線830與接墊的接觸面積,而可改善天線830與晶片820之間的電性連接。On the other hand, the projected area of the through hole 804 on the substrate 800 is, for example, larger than the projected area of the pad of the chip 820 on the substrate 800. Therefore, when the antenna 830 fills the entire through hole 804, the contact area between the antenna 830 and the pad can be ensured, and the electrical connection between the antenna 830 and the chip 820 can be improved.

在一實施例中,天線830可如同圖1A之天線120般包括第一接合線段122及第二接合線段124,相關說明可參照上述實施例,在此不再贅述。In an embodiment, the antenna 830 may include a first bonding wire segment 122 and a second bonding wire segment 124 like the antenna 120 of FIG. 1A. For related description, please refer to the above-mentioned embodiment, and will not be repeated here.

接著,在步驟S124中,乾燥天線830,使天線830固化。在本實施例中,乾燥天線830的方法例如包括熱固化、光固化、或風乾固化等,但本發明不限於此。在一實施例中,在使天線830固化之後,可於其上形成保護層(例如圖2B之保護層220、或圖6B之保護層620)。至此,已大致完成本實施例的天線裝置60的製作。最後,在步驟S126中,捲取天線裝置60。Next, in step S124, the antenna 830 is dried, and the antenna 830 is cured. In this embodiment, the method for drying the antenna 830 includes, for example, thermal curing, light curing, or air-drying curing, etc., but the present invention is not limited thereto. In one embodiment, after curing the antenna 830, a protective layer (such as the protective layer 220 in FIG. 2B or the protective layer 620 in FIG. 6B) may be formed thereon. So far, the fabrication of the antenna device 60 of this embodiment has been roughly completed. Finally, in step S126, the antenna device 60 is wound up.

在本實施例中,天線裝置60的厚度因僅包含基板800、黏著層810、晶片820與天線830的厚度,固天線裝置60的整體厚度可薄化至70 μm~80 μm。在一些實施例中,在晶片820放置於凹槽內的情況下,天線裝置60的整體厚度可達小於50 μm的程度。在另一些實施例中,在基板的兩面皆形成有凹槽的情況下,天線裝置60的整體厚度可達小於30 μm的程度。據此,相較於傳統的天線裝置(厚度大於100 μm),不僅大幅降低天線裝置整體的厚度,也可避免因晶片或天線凸出基板而容易在後續製程中受到破壞而影響良率等問題。另外,相較於傳統天線裝置的製造方法,本發明之天線裝置60的製造方法中例如可不須進行採用異方性導電膠(Anisotropic Conductive Paste,ACP)等的熱壓接合製程,因此步驟較少,而可提升製程效率。In this embodiment, since the thickness of the antenna device 60 only includes the thickness of the substrate 800, the adhesive layer 810, the chip 820, and the antenna 830, the overall thickness of the fixed antenna device 60 can be reduced to 70 μm-80 μm. In some embodiments, when the wafer 820 is placed in the groove, the overall thickness of the antenna device 60 can be less than 50 μm. In other embodiments, when grooves are formed on both sides of the substrate, the overall thickness of the antenna device 60 can be less than 30 μm. Accordingly, compared with the traditional antenna device (thickness greater than 100 μm), not only the overall thickness of the antenna device is greatly reduced, but also problems such as the chip or the antenna protruding from the substrate and easily damaged in the subsequent manufacturing process and affecting the yield rate can be avoided. . In addition, compared with the traditional antenna device manufacturing method, in the manufacturing method of the antenna device 60 of the present invention, for example, a thermal compression bonding process using anisotropic conductive paste (Anisotropic Conductive Paste, ACP), etc., is not required, so there are fewer steps. , And can improve the process efficiency.

圖12是依照本發明的第十一實施例的一種天線裝置的製造方法的流程圖。FIG. 12 is a flowchart of a manufacturing method of an antenna device according to an eleventh embodiment of the present invention.

請參照圖12,第十一實施例之製造方法與第十實施例之製造方法的不同處為:第十一實施例之製造方法是於同一捲對捲機台中進行天線裝置的製造流程。換句話說,例如可省略第十實施例之步驟S108、步驟S118、步驟S120等步驟。藉此,可提高製程效率。步驟S200~步驟S220所省略的部分技術說明可參照圖9A、圖10A、圖11A的相關內容,在此不再贅述。12, the difference between the manufacturing method of the eleventh embodiment and the manufacturing method of the tenth embodiment is: the manufacturing method of the eleventh embodiment is the manufacturing process of the antenna device in the same roll-to-roll machine station. In other words, for example, steps S108, S118, and S120 of the tenth embodiment can be omitted. In this way, the process efficiency can be improved. For the part of the technical description omitted from step S200 to step S220, please refer to the related content of FIG. 9A, FIG. 10A, and FIG. 11A, which will not be repeated here.

圖13是依照本發明的第十二實施例的一種天線裝置的製造方法的流程圖。在此必須說明的是,圖13的實施例沿用圖12的實施例的標號與部分內容,其中採用相同或近似的標號來表示相同或近似的流程,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。FIG. 13 is a flowchart of a manufacturing method of an antenna device according to a twelfth embodiment of the present invention. It must be noted here that the embodiment of FIG. 13 uses the reference numerals and part of the content of the embodiment of FIG. 12, wherein the same or similar reference numerals are used to indicate the same or similar processes, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here.

請參照圖13,第十二實施例之製造方法與第十一實施例之製造方法的不同處為:在步驟S212之後與步驟S214之前還包含步驟S213。具體來說,在步驟S202’中,對應於後續步驟中晶片預定形成區域,在基板上印刷對位記號或形成凹槽,而不在此形成黏著層,因此也省略進行第十一實施例的步驟S204。接著,在將晶片放置在基板上(步驟S212)之後,形成黏著層於晶片上(步驟S213),並壓合固定晶片(步驟S214)。Please refer to FIG. 13, the difference between the manufacturing method of the twelfth embodiment and the manufacturing method of the eleventh embodiment is that step S213 is further included after step S212 and before step S214. Specifically, in step S202', corresponding to the predetermined formation area of the wafer in the subsequent steps, an alignment mark is printed or a groove is formed on the substrate without forming an adhesive layer here, so the steps of the eleventh embodiment are also omitted. S204. Next, after placing the wafer on the substrate (step S212), an adhesive layer is formed on the wafer (step S213), and the wafer is pressed and fixed (step S214).

在本實施例中,黏著層例如包覆晶片。換句話說,黏著層例如覆蓋晶片的表面及其側面。據此,晶片可藉由黏著層固定於基板上,且可保護晶片不受到破壞。In this embodiment, the adhesive layer, for example, covers the chip. In other words, the adhesive layer, for example, covers the surface of the wafer and its side surfaces. Accordingly, the chip can be fixed on the substrate by the adhesive layer, and the chip can be protected from damage.

在一實施例中,在將晶片放置於凹槽內的情況下,黏著層例如填滿晶片與凹槽之間的間隙,而可將晶片固定於凹槽內,進而確保晶片不會自凹槽脫落。In one embodiment, when the chip is placed in the groove, the adhesive layer, for example, fills the gap between the chip and the groove, and the chip can be fixed in the groove to ensure that the chip does not come from the groove. Fall off.

圖14是依照本發明的第十三實施例的一種天線裝置的製造方法的立體示意圖,其中使用與圖9B、圖10B、圖11B相同的元件符號來代表相同或相似的構件,且所省略的部分技術說明,如各層或區域的尺寸、材料、功能等均可參照圖9B、圖10B、圖11B的相關內容,因此於下文不再贅述。14 is a perspective schematic view of a manufacturing method of an antenna device according to a thirteenth embodiment of the present invention, in which the same component symbols as in FIG. 9B, FIG. 10B, and FIG. 11B are used to represent the same or similar components, and omitted Part of the technical description, such as the size, material, function, etc. of each layer or area, can refer to the related content of FIG. 9B, FIG. 10B, and FIG.

請參照圖14,例如可重複進行上述實施例之製造方法,以在基板上形成多個天線裝置60。舉例來說,在一實施例中,可在基板準備步驟時重複進行步驟S102或步驟S202,以形成多個黏著層於基板上,接著在晶片放置步驟時重複進行步驟S112與步驟S114或步驟S210與步驟S212,以將多個晶片放置於黏著層上,然後在天線形成步驟時重複進行步驟S122或步驟S216,以將多個天線形成於基板的相對於晶片的一面上。在另一實施例中,可代替步驟S102或步驟S202而採用圖13中的步驟S213,以形成多個黏著層於晶片上,但本發明不以此為限。Please refer to FIG. 14, for example, the manufacturing method of the above-mentioned embodiment can be repeated to form a plurality of antenna devices 60 on the substrate. For example, in one embodiment, step S102 or step S202 can be repeated during the substrate preparation step to form multiple adhesive layers on the substrate, and then step S112 and step S114 or step S210 can be repeated during the wafer placement step. Same as step S212, to place a plurality of chips on the adhesive layer, and then repeat step S122 or step S216 during the antenna forming step to form a plurality of antennas on the side of the substrate opposite to the chip. In another embodiment, step S213 in FIG. 13 can be used instead of step S102 or step S202 to form a plurality of adhesive layers on the wafer, but the invention is not limited to this.

綜上所述,本發明的天線裝置藉由在基板中具有多個通孔,且天線透過通孔電性連接至晶片,可確保天線與晶片之間的電性連接,避免天線產生斷線等問題,進而提升天線裝置的良率。並且,本發明的天線裝置的製造方法中,藉由在基板中形成多個通孔,且天線透過通孔電性連接至晶片,可確保天線與晶片之間的電性連接,且可避免天線產生斷線等問題,進而提升天線裝置的良率。In summary, the antenna device of the present invention has a plurality of through holes in the substrate, and the antenna is electrically connected to the chip through the through holes, so that the electrical connection between the antenna and the chip can be ensured, and the antenna can be prevented from disconnecting, etc. Problems, and further improve the yield of the antenna device. Moreover, in the manufacturing method of the antenna device of the present invention, by forming a plurality of through holes in the substrate, and the antenna is electrically connected to the chip through the through holes, the electrical connection between the antenna and the chip can be ensured, and the antenna can be avoided. Problems such as disconnection occur, thereby improving the yield of the antenna device.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

10、20、30、40、50、60、70:天線裝置 100、800:基板 100a:第一面 100b:第二面 102、804:通孔 110、820:晶片 110a:主動面 110b:背面 112:接墊 120、830:天線 122:第一接合線段 124:第二接合線段 130、430、810:黏著層 130a、500a、800a、800b:表面 132:開孔 134、200、600:凹槽 200b、600b:底面 210、220、620:保護層 300:溝槽 500:印刷層 502:開口 700:電路結構 710:射頻區塊 712:整流器 714:調變器 720:數位區塊 722:時脈產生器 724:記憶體陣列 726:數位控制器 802:對位記號 900:收料滾筒 C:電容 D1、D2、D3、D4:距離 LA、LA1、LA2、LB、LB1、LB2:接墊 S100~S126、S200~S220:步驟 X:短邊方向 Y:長邊方向 θ1、θ2:夾角10, 20, 30, 40, 50, 60, 70: antenna device 100, 800: substrate 100a: First side 100b: second side 102, 804: through hole 110, 820: chip 110a: active side 110b: back 112: pad 120, 830: antenna 122: first joint line segment 124: Second joint line segment 130, 430, 810: Adhesive layer 130a, 500a, 800a, 800b: surface 132: Opening 134, 200, 600: groove 200b, 600b: bottom surface 210, 220, 620: protective layer 300: groove 500: printing layer 502: open 700: circuit structure 710: RF block 712: Rectifier 714: Modulator 720: digital block 722: Clock Generator 724: Memory Array 726: Digital Controller 802: Counterpoint 900: Receiving drum C: Capacitance D1, D2, D3, D4: distance LA, LA1, LA2, LB, LB1, LB2: pad S100~S126, S200~S220: steps X: Short-side direction Y: Long side direction θ1, θ2: included angle

圖1A是依照本發明的第一實施例的一種天線裝置的俯視示意圖。 圖1B是依照本發明的第一實施例的一種天線裝置的仰視示意圖。 圖1C是圖1A的X1-X2線段之局部剖面示意圖。 圖1D是圖1A的Y1-Y2線段之剖面示意圖。 圖2A是依照本發明的第二實施例的一種天線裝置的俯視示意圖。 圖2B是依照本發明的第二實施例的一種天線裝置的仰視示意圖。 圖2C是圖2A的X1-X2線段之局部剖面示意圖。 圖2D是圖2A的Y1-Y2線段之剖面示意圖。 圖3A是依照本發明的第三實施例的一種天線裝置的俯視示意圖。 圖3B是依照本發明的第三實施例的一種天線裝置的仰視示意圖。 圖3C是圖3A的X1-X2線段之局部剖面示意圖。 圖3D是圖3A的Y1-Y2線段之剖面示意圖。 圖4A是依照本發明的第四實施例的一種天線裝置的俯視示意圖。 圖4B是依照本發明的第四實施例的一種天線裝置的仰視示意圖。 圖4C是圖4A的X1-X2線段之局部剖面示意圖。 圖4D是圖4A的Y1-Y2線段之剖面示意圖。 圖5A至圖5E是依照本發明的第五實施例的一種天線裝置的製造方法的流程圖。 圖6A是依照本發明的第六實施例的一種天線裝置的俯視示意圖。 圖6B是依照本發明的第六實施例的一種天線裝置的仰視示意圖。 圖6C是圖6A的X1-X2線段之局部剖面示意圖。 圖6D是圖6A的Y1-Y2線段之剖面示意圖。 圖7A是依照本發明的第七實施例的晶片的上視示意圖。 圖7B是依照本發明的第八實施例的晶片的上視示意圖。 圖8是依照本發明的第九實施例的晶片的電路結構示意圖。 圖9A、圖10A、圖11A是依照本發明的第十實施例的一種天線裝置的製造方法的流程圖。 圖9B、圖10B、圖11B是依照本發明的第十實施例的一種天線裝置的製造方法的局部立體示意圖。 圖12是依照本發明的第十一實施例的一種天線裝置的製造方法的流程圖。 圖13是依照本發明的第十二實施例的一種天線裝置的製造方法的流程圖。 圖14是依照本發明的第十三實施例的一種天線裝置的製造方法的立體示意圖。 FIG. 1A is a schematic top view of an antenna device according to the first embodiment of the present invention. Fig. 1B is a schematic bottom view of an antenna device according to the first embodiment of the present invention. Fig. 1C is a schematic partial cross-sectional view of the line X1-X2 in Fig. 1A. Fig. 1D is a schematic cross-sectional view of the line Y1-Y2 in Fig. 1A. 2A is a schematic top view of an antenna device according to a second embodiment of the invention. 2B is a schematic bottom view of an antenna device according to the second embodiment of the present invention. Fig. 2C is a schematic partial cross-sectional view of the line X1-X2 in Fig. 2A. Fig. 2D is a schematic cross-sectional view of the line Y1-Y2 in Fig. 2A. 3A is a schematic top view of an antenna device according to a third embodiment of the present invention. 3B is a schematic bottom view of an antenna device according to the third embodiment of the present invention. Fig. 3C is a schematic partial cross-sectional view of the line X1-X2 in Fig. 3A. Fig. 3D is a schematic cross-sectional view of the line Y1-Y2 in Fig. 3A. 4A is a schematic top view of an antenna device according to a fourth embodiment of the present invention. 4B is a schematic bottom view of an antenna device according to the fourth embodiment of the present invention. Fig. 4C is a schematic partial cross-sectional view of the line X1-X2 in Fig. 4A. Fig. 4D is a schematic cross-sectional view of the line Y1-Y2 in Fig. 4A. 5A to 5E are flowcharts of a manufacturing method of an antenna device according to a fifth embodiment of the present invention. FIG. 6A is a schematic top view of an antenna device according to a sixth embodiment of the present invention. Fig. 6B is a schematic bottom view of an antenna device according to a sixth embodiment of the present invention. Fig. 6C is a schematic partial cross-sectional view of the line X1-X2 in Fig. 6A. Fig. 6D is a schematic cross-sectional view of the line Y1-Y2 in Fig. 6A. Fig. 7A is a schematic top view of a wafer according to a seventh embodiment of the present invention. Fig. 7B is a schematic top view of a wafer according to an eighth embodiment of the present invention. FIG. 8 is a schematic diagram of a circuit structure of a chip according to a ninth embodiment of the present invention. 9A, 10A, and 11A are flowcharts of a manufacturing method of an antenna device according to a tenth embodiment of the present invention. 9B, 10B, and 11B are partial three-dimensional schematic diagrams of a manufacturing method of an antenna device according to a tenth embodiment of the present invention. FIG. 12 is a flowchart of a manufacturing method of an antenna device according to an eleventh embodiment of the present invention. FIG. 13 is a flowchart of a manufacturing method of an antenna device according to a twelfth embodiment of the present invention. FIG. 14 is a schematic perspective view of a manufacturing method of an antenna device according to a thirteenth embodiment of the present invention.

100:基板 100: substrate

100a:第一面 100a: First side

100b:第二面 100b: second side

102:通孔 102: Through hole

110:晶片 110: chip

110a:主動面 110a: active side

110b:背面 110b: back

112:接墊 112: pad

120:天線 120: Antenna

122:第一接合線段 122: first joint line segment

124:第二接合線段 124: Second joint line segment

130:黏著層 130: Adhesive layer

132:開孔 132: Opening

134:凹槽 134: Groove

D1、D3、D4:距離 D1, D3, D4: distance

Y:長邊方向 Y: Long side direction

Claims (20)

一種天線裝置,包括: 基板,具有相反的第一面與第二面、以及至少兩個通孔; 晶片,設置於所述基板的所述第一面上,所述晶片於面向所述基板的表面具有分別對應所述至少兩個通孔的至少兩個接墊;以及 天線,設置於所述基板的所述第二面上,所述天線的至少一部分位於所述至少兩個通孔中,所述天線經由所述至少兩個通孔與所述至少兩個接墊電性連接。 An antenna device, including: The substrate has a first surface and a second surface opposite to each other, and at least two through holes; A chip disposed on the first surface of the substrate, and the chip has at least two pads corresponding to the at least two through holes on the surface facing the substrate; and An antenna disposed on the second surface of the substrate, at least a part of the antenna is located in the at least two through holes, and the antenna is connected to the at least two pads through the at least two through holes Electrical connection. 如請求項1所述的天線裝置,其中所述天線具有分別與所述至少兩個接墊電性連接的第一接合線段及第二接合線段,所述第一接合線段位於所述天線最外圈,且完整覆蓋所述至少兩個通孔的一者,所述第二接合線段位於所述天線最內圈,且完整覆蓋所述至少兩個通孔的另一者。The antenna device according to claim 1, wherein the antenna has a first bonding wire segment and a second bonding wire segment electrically connected to the at least two pads, and the first bonding wire segment is located at the outermost portion of the antenna And completely cover one of the at least two through holes, and the second bonding wire segment is located at the innermost circle of the antenna and completely covers the other of the at least two through holes. 如請求項1所述的天線裝置,更包括: 黏著層,位於所述基板與所述晶片之間。 The antenna device according to claim 1, further comprising: The adhesive layer is located between the substrate and the chip. 如請求項3所述的天線裝置,其中所述黏著層的面積大於所述晶片的面積, 所述晶片埋設於所述黏著層的一部分內,使得位於所述基板與所述晶片之間的所述黏著層的厚度小於位於所述晶片周邊的所述黏著層的厚度, 所述黏著層具有分別對應於所述至少兩個通孔的至少兩個開孔。 The antenna device according to claim 3, wherein the area of the adhesive layer is larger than the area of the chip, The chip is buried in a part of the adhesion layer, so that the thickness of the adhesion layer between the substrate and the chip is smaller than the thickness of the adhesion layer on the periphery of the chip, The adhesive layer has at least two openings respectively corresponding to the at least two through holes. 如請求項1所述的天線裝置,其更包括: 保護黏著層,配置於所述晶片上,所述保護黏著層覆蓋所述晶片, 所述保護黏著層的面積大於所述晶片的面積。 The antenna device according to claim 1, which further includes: The protective adhesive layer is disposed on the chip, and the protective adhesive layer covers the chip, The area of the protective adhesive layer is larger than the area of the chip. 如請求項1所述的天線裝置,其中所述基板於所述第一面更具有容置所述晶片的第一凹槽, 所述第一凹槽的側壁與所述基板的所述第二面之間具有夾角,且所述夾角為銳角, 所述至少兩個通孔設置於所述第一凹槽底面的所述基板內。 The antenna device according to claim 1, wherein the substrate further has a first groove for accommodating the chip on the first surface, There is an included angle between the side wall of the first groove and the second surface of the substrate, and the included angle is an acute angle, The at least two through holes are arranged in the substrate on the bottom surface of the first groove. 如請求項6所述的天線裝置,其中所述基板於所述第二面更具有容置所述天線的第二凹槽, 所述至少兩個通孔設置於所述第一凹槽與所述第二凹槽之間的所述基板內。 The antenna device according to claim 6, wherein the substrate further has a second groove for accommodating the antenna on the second surface, The at least two through holes are arranged in the substrate between the first groove and the second groove. 如請求項1所述的天線裝置,其更包括: 保護層,配置於所述晶片及所述天線中的至少一者上,所述保護層在所述基板上的投影面積大於所述晶片及所述天線中的至少一者在所述基板上的投影面積。 The antenna device according to claim 1, which further includes: A protective layer is disposed on at least one of the chip and the antenna, and the projected area of the protective layer on the substrate is larger than that of at least one of the chip and the antenna on the substrate shadow area. 如請求項1所述的天線裝置,其更包括: 印刷層,位於所述基板的所述第一面上, 所述印刷層具有開口,所述晶片位於所述開口內,且所述印刷層的表面與所述晶片的背面之間的水平高度差為7 μm以下。 The antenna device according to claim 1, which further includes: A printing layer located on the first surface of the substrate, The printed layer has an opening, the wafer is located in the opening, and the level difference between the surface of the printed layer and the back surface of the wafer is 7 μm or less. 如請求項1至請求項9中任一項所述的天線裝置,其中所述基板更包括溝槽, 所述溝槽鄰近所述晶片的短邊,且與所述晶片相隔一距離, 所述溝槽的長度大於或等於所述晶片的寬度。 The antenna device according to any one of claim 1 to claim 9, wherein the substrate further includes a groove, The groove is adjacent to the short side of the wafer and is separated from the wafer by a distance, The length of the groove is greater than or equal to the width of the wafer. 一種天線裝置的製造方法,包括: 基板準備步驟,於基板中形成至少兩個通孔,所述基板具有相反的第一面與第二面; 晶片放置步驟,所述基板以捲對捲的方式移動,並將晶片放置於所述基板的所述第一面上,所述晶片於面向所述基板的表面具有分別對應所述至少兩個通孔的至少兩個接墊;以及 天線形成步驟,形成天線於所述基板的所述第二面上,所述天線的至少一部分位於所述至少兩個通孔中,所述天線經由所述至少兩個通孔與所述至少兩個接墊電性連接。 A manufacturing method of an antenna device includes: In the substrate preparation step, at least two through holes are formed in the substrate, the substrate having opposite first and second surfaces; In the wafer placing step, the substrate is moved in a roll-to-roll manner, and the wafer is placed on the first surface of the substrate, and the surface of the wafer facing the substrate has a surface corresponding to the at least two channels respectively. At least two pads of the hole; and In the antenna forming step, an antenna is formed on the second surface of the substrate, at least a part of the antenna is located in the at least two through holes, and the antenna is connected to the at least two through holes through the at least two through holes. The pads are electrically connected. 如請求項11所述的天線裝置的製造方法,其中所述晶片的短邊方向與所述基板的移動方向之間具有夾角,所述夾角小於或等於45度。The method for manufacturing an antenna device according to claim 11, wherein an included angle is formed between the short side direction of the wafer and the moving direction of the substrate, and the included angle is less than or equal to 45 degrees. 如請求項11所述的天線裝置的製造方法,其中所述天線具有分別與所述至少兩個接墊電性連接的第一接合線段及第二接合線段, 所述第一接合線段位於所述天線最外圈,且以完整覆蓋所述至少兩個通孔的一者的方式橫跨所述晶片的短邊方向,所述第二接合線段位於所述天線最內圈,且以完整覆蓋所述至少兩個通孔的另一者的方式橫跨所述晶片的短邊方向。 The method for manufacturing an antenna device according to claim 11, wherein the antenna has a first bonding wire segment and a second bonding wire segment that are electrically connected to the at least two pads, respectively, The first bonding wire segment is located at the outermost circle of the antenna and traverses the short side direction of the chip in a manner of completely covering one of the at least two through holes, and the second bonding wire segment is located at the antenna The innermost ring, and spans the short side direction of the chip in a manner of completely covering the other of the at least two through holes. 如請求項11所述的天線裝置的製造方法,其中在所述基板準備步驟中,更包括: 於所述基板的所述晶片的預定形成區域形成黏著層。 The method for manufacturing an antenna device according to claim 11, wherein the substrate preparation step further includes: An adhesive layer is formed on the predetermined formation area of the wafer of the substrate. 如請求項14所述的天線裝置的製造方法,其中所述黏著層的面積大於所述晶片的面積, 在所述晶片放置步驟中,所述晶片埋設於所述黏著層的一部分內,使得位於所述基板與所述晶片之間的所述黏著層的厚度小於位於所述晶片周邊的所述黏著層的厚度, 所述黏著層具有分別對應於所述至少兩個通孔的至少兩個開孔,使得所述黏著層暴露出所述晶片的所述至少兩個接墊。 The method of manufacturing an antenna device according to claim 14, wherein the area of the adhesive layer is larger than the area of the chip, In the wafer placement step, the wafer is buried in a part of the adhesive layer, so that the thickness of the adhesive layer between the substrate and the wafer is smaller than that of the adhesive layer at the periphery of the wafer thickness of, The adhesive layer has at least two openings respectively corresponding to the at least two through holes, so that the adhesive layer exposes the at least two pads of the chip. 如請求項11所述的天線裝置的製造方法,其中在所述晶片放置步驟之後與所述天線形成步驟之前,更包括: 形成保護黏著層於所述晶片上,所述保護黏著層覆蓋所述晶片, 所述保護黏著層的面積大於所述晶片的面積。 The method for manufacturing an antenna device according to claim 11, wherein after the chip placing step and before the antenna forming step, the method further includes: Forming a protective adhesive layer on the chip, the protective adhesive layer covering the chip, The area of the protective adhesive layer is larger than the area of the chip. 如請求項11所述的天線裝置的製造方法,其中在所述基板準備步驟中,更包括: 第一凹槽形成步驟,在所述基板的所述第一面中對應於所述晶片的預定形成區域形成第一凹槽, 所述第一凹槽的側壁與所述基板的所述第二面之間具有夾角,且所述夾角為銳角, 所述至少兩個通孔設置於所述第一凹槽底面的所述基板內。 The method for manufacturing an antenna device according to claim 11, wherein the substrate preparation step further includes: The first groove forming step is to form a first groove in the first surface of the substrate corresponding to a predetermined formation area of the wafer, There is an included angle between the side wall of the first groove and the second surface of the substrate, and the included angle is an acute angle, The at least two through holes are arranged in the substrate on the bottom surface of the first groove. 如請求項17所述的天線裝置的製造方法,其中在所述基板準備步驟中,更包括: 第二凹槽形成步驟,在所述基板的所述第二面中對應於所述天線的預定形成區域形成第二凹槽, 所述至少兩個通孔設置於所述第一凹槽與所述第二凹槽之間的所述基板內。 The method for manufacturing an antenna device according to claim 17, wherein the substrate preparation step further includes: The second groove forming step is to form a second groove in the second surface of the substrate corresponding to a predetermined formation area of the antenna, The at least two through holes are provided in the substrate between the first groove and the second groove. 如請求項11所述的天線裝置的製造方法,其中在所述基板準備步驟中,更包括: 溝槽形成步驟,在所述基板中鄰近所述晶片的預定形成區域的短邊形成溝槽,且所述溝槽與所述預定形成區域相隔一距離。 The method for manufacturing an antenna device according to claim 11, wherein the substrate preparation step further includes: In the groove forming step, a groove is formed in the substrate adjacent to the short side of the predetermined formation area of the wafer, and the groove is separated from the predetermined formation area by a distance. 如請求項11所述的天線裝置的製造方法,其中在天線形成步驟中,形成有分別與所述至少兩個接墊電性連接的第一接合線段及第二接合線段,所述第一接合線段位於所述天線最外圈,且完整覆蓋所述至少兩個通孔的一者,所述第二接合線段位於所述天線最內圈,且完整覆蓋所述至少兩個通孔的另一者。The method of manufacturing an antenna device according to claim 11, wherein in the antenna forming step, a first bonding wire segment and a second bonding wire segment electrically connected to the at least two pads are formed, and the first bonding The line segment is located at the outermost circle of the antenna and completely covers one of the at least two through holes. The second bonding line segment is located at the innermost circle of the antenna and completely covers the other of the at least two through holes. By.
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