TWI726677B - Method and system for regenerating acid etching waste liquid - Google Patents

Method and system for regenerating acid etching waste liquid Download PDF

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TWI726677B
TWI726677B TW109112040A TW109112040A TWI726677B TW I726677 B TWI726677 B TW I726677B TW 109112040 A TW109112040 A TW 109112040A TW 109112040 A TW109112040 A TW 109112040A TW I726677 B TWI726677 B TW I726677B
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etching solution
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liquid
electrolytic
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TW202138621A (en
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劉陽
胡波
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健鼎科技股份有限公司
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Abstract

A method for regenerating an acid etching waste liquid includes the following steps. (i) An etching solution to be processed including copper ions, cuprous ions, and chloride ions is provided. (ii) The etching solution to be processed is transferred to an electrolytic cell for electrolytic reaction to obtain an electrolytic regeneration solution, in which the anode of the electrolytic cell converts cuprous ions into copper ions and chloride ions into chlorine gas, and the cathode of the electrolytic cell converts copper ions into copper metal, in which a concentration of the cuprous ions in the electrolytic regeneration solution is lower than a concentration of cuprous ion in the etching solution to be processed. (iii) The chlorine gas obtained from the anode reacts with the electrolytic regeneration solution to convert the cuprous ion in the electrolytic regeneration solution to copper ions thereby obtaining a regenerated acid etching solution. (iv) The regenerated acid etching solution is transferred to a wet etching machine for use.

Description

再生酸蝕刻廢液的方法及其系統 Method and system for regenerating acid etching waste liquid

本發明係有關於一種再生酸蝕刻廢液的方法及其系統。特別有關於用於電路板結構的酸蝕刻廢液。 The present invention relates to a method and system for regenerating waste acid etching liquid. Especially with regard to the acid etching waste liquid used for circuit board structure.

印刷電路板(Printed Circuit Board;PCB)是依電路設計將連接電路零件的電子佈線製成圖形(Pattern),再經過特定的機械加工、處理等製程,於絕緣體上使電子導體重現所構成之電路板,主要目的是藉由電路板上的電路讓配置於電路板上的電子零件發揮功能。 Printed Circuit Board (PCB) is a pattern made of electronic wiring connecting circuit parts according to the circuit design, and then subjected to specific mechanical processing, processing and other processes to reproduce the electronic conductors on the insulator. The main purpose of the circuit board is to make the electronic parts arranged on the circuit board function through the circuit on the circuit board.

目前在PCB的內外層之圖形蝕刻,通常使用酸性蝕刻液,蝕刻後的廢液含有豐富的亞銅離子、銅離子、氯離子,直接販賣或者排放會造成資源浪費及環保問題,且用於酸性蝕刻液的氧化劑之購買成本持續偏高。因此,亟需一種可以有效再生酸蝕刻廢液的方法及系統。 At present, the pattern etching of the inner and outer layers of PCB usually uses an acidic etching solution. The waste solution after etching is rich in cuprous ions, copper ions, and chloride ions. Direct sales or discharge will cause waste of resources and environmental protection problems, and it is used for acid The purchase cost of the oxidizer of the etching solution continues to be high. Therefore, there is an urgent need for a method and system that can effectively regenerate the acid etching waste liquid.

在本發明的各種實施例中,將酸蝕刻廢液中的亞銅 離子電解再生為銅離子,並且可在陰極析出金屬銅,可選地加入少許蝕刻添加劑後,再回用至蝕刻產線上,以達到再生廢液的目的。 In various embodiments of the present invention, the cuprous acid in the acid etching waste liquid Ion electrolysis is regenerated into copper ions, and metallic copper can be precipitated at the cathode, optionally adding a small amount of etching additives, and then reused on the etching production line to achieve the purpose of regenerating the waste liquid.

在本發明的各種實施例中,一種電路板結構的製造方法,包含以下步驟:(i)提供待處理蝕刻液,包含銅離子、亞銅離子及氯離子;(ii)將待處理蝕刻液傳送電解槽進行電解反應,以得到電解再生液,其中電解槽的陽極將亞銅離子轉變為銅離子,且將氯離子轉變為氯氣,電解槽的陰極將銅離子轉變為銅金屬,其中電解再生液的亞銅離子的濃度低於待處理蝕刻液中的亞銅離子的濃度;(iii)將由陽極所得的氯氣與電解再生液反應,使電解再生液中的亞銅離子轉變銅離子,而得到再生酸蝕刻液;以及(iv)將再生酸蝕刻液傳送至濕式蝕刻機上使用。 In various embodiments of the present invention, a method for manufacturing a circuit board structure includes the following steps: (i) providing an etching solution to be processed, including copper ions, cuprous ions, and chloride ions; (ii) transferring the etching solution to be processed The electrolytic cell undergoes an electrolysis reaction to obtain an electrolytic regeneration solution. The anode of the electrolytic cell converts cuprous ions into copper ions and chlorine ions into chlorine gas, and the cathode of the electrolytic cell converts copper ions into copper metal, and the electrolytic regeneration solution The concentration of cuprous ions in the etching solution to be treated is lower than the concentration of cuprous ions in the etching solution to be processed; (iii) the chlorine gas obtained from the anode is reacted with the electrolytic regeneration solution to convert the cuprous ions in the electrolytic regeneration solution to copper ions to obtain regeneration Acid etching solution; and (iv) transferring the regenerated acid etching solution to the wet etching machine for use.

在本發明內容的多個實施例中,步驟(iii)更包含將未反應完氯氣傳送到氯氣吸收器而被吸收。 In many embodiments of the present invention, step (iii) further includes sending unreacted chlorine gas to a chlorine gas absorber to be absorbed.

在本發明內容的多個實施例中,在步驟(iv)之前,添加蝕刻添加劑於再生酸蝕刻液。 In many embodiments of the present invention, before step (iv), an etching additive is added to the regenerated acid etching solution.

在本發明內容的多個實施例中,待處理蝕刻液包含CuCl2In many embodiments of the present invention, the etching solution to be processed contains CuCl 2 .

在本發明內容的多個實施例中,待處理蝕刻液包含HCl。 In many embodiments of the present invention, the etching solution to be processed contains HCl.

在本發明內容的多個實施例中,一種再生酸蝕刻廢液的系統,包含:第一儲槽、電解槽、氣液反應器。第一儲槽,配置以儲存待處理蝕刻液;電解槽,配置以接收待 處理蝕刻液,以及對待處理蝕刻液進行電解反應,其中電解槽包含氣體出口以及液體出口;氣液反應器,配置以處理經電解反應的待處理蝕刻液,而得到再生酸蝕刻液,氣液反應器包含:第一液體入口、第二液體入口、氣體入口以及第一液體出口。第一液體入口,連通電解槽的液體出口,以接收經電解反應的待處理蝕刻液;第二液體入口,連接酸蝕刻廢液供應源;氣體入口,連接電解槽的氣體出口;以及第一液體出口,配置以輸出再生酸蝕刻液。 In many embodiments of the present invention, a system for regenerating acid etching waste liquid includes: a first storage tank, an electrolytic tank, and a gas-liquid reactor. The first storage tank is configured to store the etching solution to be processed; the electrolytic tank is configured to receive the etching solution to be processed The etching solution is processed, and the etching solution to be processed is electrolytically reacted, wherein the electrolytic tank includes a gas outlet and a liquid outlet; a gas-liquid reactor is configured to process the etching solution to be processed through the electrolysis reaction to obtain a regenerated acid etching solution, gas-liquid reaction The device includes: a first liquid inlet, a second liquid inlet, a gas inlet, and a first liquid outlet. The first liquid inlet is connected to the liquid outlet of the electrolytic cell to receive the etching solution to be treated after the electrolysis reaction; the second liquid inlet is connected to the acid etching waste liquid supply source; the gas inlet is connected to the gas outlet of the electrolytic cell; and the first liquid The outlet is configured to output the regenerated acid etching solution.

在本發明內容的多個實施例中,更包含第二儲槽,第二儲槽的入口連接電解槽的液體出口,以接收經電解反應的待處理蝕刻液,且第二儲槽的出口連接氣液反應器的第一液體入口。 In many embodiments of the present invention, a second storage tank is further included. The inlet of the second storage tank is connected to the liquid outlet of the electrolytic tank to receive the etching solution to be treated after the electrolysis reaction, and the outlet of the second storage tank is connected to The first liquid inlet of the gas-liquid reactor.

在本發明內容的多個實施例中,更包含氯氣吸收器,配置以吸收氯氣,氯氣吸收器包含:氯氣入口,其連通電解槽的氣體出口。 In many embodiments of the present invention, a chlorine gas absorber is further included, configured to absorb chlorine gas, and the chlorine gas absorber includes: a chlorine gas inlet connected to the gas outlet of the electrolytic cell.

在本發明內容的多個實施例中,氣液反應器更包含氣體出口、第二液體出口。氣體出口連通氯氣吸收器的氯氣入口;以及第二液體出口連接第一儲槽。 In many embodiments of the present invention, the gas-liquid reactor further includes a gas outlet and a second liquid outlet. The gas outlet is connected to the chlorine inlet of the chlorine absorber; and the second liquid outlet is connected to the first storage tank.

在本發明內容的多個實施例中,氣液反應器的第一液體出口連通濕式蝕刻機。 In many embodiments of the present invention, the first liquid outlet of the gas-liquid reactor is connected to the wet etching machine.

以下將以實施方式對上述之說明做詳細的描述,並對本發明之技術方案提供更進一步的解釋。 Hereinafter, the above description will be described in detail by way of implementation, and a further explanation will be provided for the technical solution of the present invention.

102:第一儲槽 102: first storage tank

103:電解槽 103: Electrolyzer

1030:回收銅金屬單元 1030: Recycling copper metal unit

103A:陽極室 103A: anode chamber

103B:陰極室 103B: Cathode chamber

104:氣液反應器 104: Gas-liquid reactor

105:第二儲槽 105: second storage tank

106:氯氣吸收器 106: Chlorine Absorber

107:濕式蝕刻機 107: Wet etching machine

108:酸蝕刻廢液供應源 108: Acid etching waste liquid supply source

109:比重控制器 109: Specific gravity controller

110:蝕刻劑儲存槽 110: Etchant storage tank

31G:氣體出口 31G: Gas outlet

31L:液體出口 31L: Liquid outlet

41L:第一液體入口 41L: first liquid inlet

41LE:第一液體出口 41LE: The first liquid outlet

41G:氣體入口 41G: gas inlet

41GL:氣體出口 41GL: Gas outlet

42L:第二液體入口 42L: second liquid inlet

42LE:第二液體出口 42LE: second liquid outlet

500:再生酸蝕刻廢液系統 500: Regenerated acid etching waste liquid system

51L:入口 51L: entrance

51LE:出口 51LE: Exit

61G:氯氣入口 61G: Chlorine gas inlet

S102、S104、S106、S108:步驟 S102, S104, S106, S108: steps

M100:方法 M100: method

為使本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,請詳閱以下的詳細敘述並搭配對應的圖式。 In order to make the above and other objectives, features, advantages, and embodiments of the present invention more obvious and understandable, please read the following detailed description and match the corresponding drawings.

第1圖是根據本發明一些實施例所繪示的再生酸蝕刻廢液系統。 Fig. 1 is a system for regenerating acid etching waste liquid according to some embodiments of the present invention.

第2圖是依照本發明一些實施例使用第1圖的系統所繪示之再生酸蝕刻廢液的方法流程圖。 FIG. 2 is a flowchart of a method for regenerating the acid etching waste liquid using the system depicted in FIG. 1 according to some embodiments of the present invention.

在實施方式與申請專利範圍中,除非內文中對於冠詞有所特別限定,否則「一」與「該」可泛指單一個或複數個。 In the implementation and the scope of the patent application, unless the article is specifically limited in the context, "a" and "the" can generally refer to a single or plural.

關於本文中所使用之「約」、「大約」或「大致」的用語一般通常係指數值之誤差或範圍約百分之二十以內,較佳地是約百分之十以內,更佳地則是約百分五之以內。 Regarding the terms "about", "approximately" or "approximately" used in this article, generally the error or range of the index value is generally within about 20%, preferably within about 10%, more preferably It is within about five percent.

第1圖是根據本發明一些實施例所繪示的再生酸蝕刻廢液系統500。請參照第1圖,再生酸蝕刻廢液系統500包含第一儲槽102、電解槽103、氣液反應器104、以及濕式蝕刻機107。濕式蝕刻機107容置有酸蝕刻液,用於印刷電路板的內外層的蝕刻製程。第一儲槽102、電解槽103及氣液反應器104配置以再生使用過的酸蝕刻液。 FIG. 1 shows a system 500 for regenerating acid etching waste liquid according to some embodiments of the present invention. Please refer to FIG. 1, the regeneration acid etching waste liquid system 500 includes a first storage tank 102, an electrolytic tank 103, a gas-liquid reactor 104, and a wet etching machine 107. The wet etching machine 107 contains an acid etching solution for the etching process of the inner and outer layers of the printed circuit board. The first storage tank 102, the electrolytic tank 103, and the gas-liquid reactor 104 are configured to regenerate the used acid etching solution.

第一儲槽102配置以儲存待處理蝕刻液。在一些實施例中,待處理蝕刻液包含銅離子(Cu2+)、亞銅離子(Cu+)以及氯離子(Cl-)。在其他實施例中,待處理蝕刻液包含CuCl2。在特定實施例中,待處理蝕刻液包含HCl。 The first storage tank 102 is configured to store the etching solution to be processed. In some embodiments, the etching solution to be processed includes copper ions (Cu 2+ ), cuprous ions (Cu + ), and chloride ions (Cl ). In other embodiments, the etching solution to be processed contains CuCl 2 . In a specific embodiment, the etching solution to be processed contains HCl.

電解槽103配置以接收待處理蝕刻液,以及對待處理蝕刻液進行電解反應。如第1圖所示,電解槽103連通至第一儲槽102。在多個實施例中,將待處理蝕刻液從第一儲槽102傳送至電解槽103進行電解反應,以得到電解再生液。 The electrolytic tank 103 is configured to receive the etching solution to be processed, and to perform an electrolytic reaction on the etching solution to be processed. As shown in FIG. 1, the electrolytic tank 103 is connected to the first storage tank 102. In many embodiments, the etching solution to be processed is transferred from the first storage tank 102 to the electrolytic tank 103 for electrolysis reaction, so as to obtain the electrolytic regeneration solution.

詳細地說,使用隔膜電解(Membrane Electrolysis)製程,其藉由微滲透膜(未繪示)將電解槽103分為陽極室103A和陰極室103B。當待處理蝕刻液進入電解槽103後,在電流作用下,如式一所示,電解槽的陽極將亞銅離子轉變為銅離子;如式二所示,在電解槽的陽極將氯離子轉變為氯氣;以及如式三所示,電解槽的陰極將銅離子轉變為銅金屬。 In detail, a membrane electrolysis (Membrane Electrolysis) process is used, which uses a micro-permeable membrane (not shown) to divide the electrolytic cell 103 into an anode chamber 103A and a cathode chamber 103B. When the etching solution to be processed enters the electrolytic cell 103, under the action of electric current, as shown in formula 1, the anode of the electrolytic cell converts cuprous ions into copper ions; as shown in formula 2, the anode of the electrolytic cell converts chloride ions It is chlorine gas; and as shown in formula three, the cathode of the electrolytic cell converts copper ions into copper metal.

式一:Cu+ → Cu2++e- A formula: Cu + → Cu 2+ + e -

式二:2Cl- → Cl2+2e- Two formulas: 2Cl - → Cl 2 + 2e -

式三:Cu2++2e- → Cu Three-: Cu 2+ + 2e - → Cu

再次參照第1圖,電解槽103包含氣體出口31G以及液體出口31L。氣體出口31G配置以輸送出陽極室103A的氯氣,且液體出口31L配置以輸送出陽極室103A 的電解再生液。 Referring to Fig. 1 again, the electrolytic cell 103 includes a gas outlet 31G and a liquid outlet 31L. The gas outlet 31G is configured to transport the chlorine gas out of the anode chamber 103A, and the liquid outlet 31L is configured to transport out the anode chamber 103A 的electrolyte regeneration solution.

值得注意的是,本發明藉由上述電解反應提供至少三個功效。第一個功效,在印刷電路板的內外層之銅蝕刻反應中,銅離子具蝕刻能力,但亞銅離子不具蝕刻能力。藉由電解反應,將待處理蝕刻液的亞銅離子轉變為銅離子,從而再生待處理蝕刻液的蝕刻能力。在多個實施例中,經電解後,電解再生液的亞銅離子的濃度低於待處理蝕刻液中的亞銅離子的濃度。表一為待處理蝕刻液在電解之前及之後的濃度。如表一所示,與電解之前相比,電解之後的電待處理蝕刻液的亞銅離子濃度下降。 It is worth noting that the present invention provides at least three effects through the above-mentioned electrolysis reaction. The first effect is that in the copper etching reaction of the inner and outer layers of the printed circuit board, the copper ion has the etching ability, but the cuprous ion does not have the etching ability. Through the electrolysis reaction, the cuprous ions of the etching solution to be processed are converted into copper ions, thereby regenerating the etching ability of the etching solution to be processed. In many embodiments, after electrolysis, the concentration of cuprous ions in the electrolytic regeneration solution is lower than the concentration of cuprous ions in the etching solution to be processed. Table 1 shows the concentration of the etching solution to be processed before and after electrolysis. As shown in Table 1, compared with before electrolysis, the concentration of cuprous ions in the electrolytic etching solution after electrolysis has decreased.

Figure 109112040-A0101-12-0006-1
Figure 109112040-A0101-12-0006-1

另一方面,電解時在陰極析出的金屬銅,具有經濟價值。如第1圖所示,可以藉由回收銅金屬單元1030,進一步販賣或者用於其他製程階段,以節省成本,此為第二個功效。 On the other hand, the metallic copper deposited at the cathode during electrolysis has economic value. As shown in Figure 1, the copper metal unit 1030 can be recycled and sold or used in other process stages to save costs. This is the second effect.

第三個功效,電解時所獲得的氯氣,可以回送至再生酸蝕刻廢液系統500中,作為電解再生液的氧化劑,使 得電解再生液的亞銅離子濃度進一步地降低,此將於下文詳述。使用電解反應所產生的氯氣作為電解再生液的氧化劑,有效減少氧化劑購買,可節省生產成本。 The third function is that the chlorine gas obtained during electrolysis can be returned to the regenerated acid etching waste liquid system 500 as the oxidant of the electrolytic regenerated liquid, so that The cuprous ion concentration of the obtained electrolytic regeneration solution is further reduced, which will be described in detail below. Using the chlorine produced by the electrolysis reaction as the oxidant of the electrolytic regenerating solution can effectively reduce the purchase of oxidants and save production costs.

再次參照第1圖,氣液反應器104,配置以處理經電解反應的待處理蝕刻液(即電解再生液),而得到再生酸蝕刻液。氣液反應器104包含第一液體入口41L、氣體入口41G、第一液體出口41LE、以及第二液體入口42L。 Referring to Fig. 1 again, the gas-liquid reactor 104 is configured to treat the etching solution to be treated (ie, the electrolytic regenerating solution) that undergoes the electrolysis reaction to obtain a regenerated acid etching solution. The gas-liquid reactor 104 includes a first liquid inlet 41L, a gas inlet 41G, a first liquid outlet 41LE, and a second liquid inlet 42L.

氣液反應器104的第一液體入口41L連通至電解槽103的液體出口31L,以接收經電解反應的待處理蝕刻液。氣液反應器104的氣體入口41G連接電解槽的氣體出口31G,以接收經電解反應所產生的氯氣。詳細地說,將由陽極室103A所得的氯氣與電解再生液於氣液反應器104中反應,如式四所示,使電解再生液中的亞銅離子轉變銅離子,而得到再生酸蝕刻液。 The first liquid inlet 41L of the gas-liquid reactor 104 is connected to the liquid outlet 31L of the electrolytic tank 103 to receive the etching liquid to be treated after the electrolysis reaction. The gas inlet 41G of the gas-liquid reactor 104 is connected to the gas outlet 31G of the electrolytic cell to receive the chlorine gas generated by the electrolysis reaction. In detail, the chlorine gas obtained from the anode chamber 103A and the electrolytic regeneration solution are reacted in the gas-liquid reactor 104, as shown in Equation 4, to convert the cuprous ions in the electrolytic regeneration solution to copper ions to obtain a regenerated acid etching solution.

式四:2CuCl+Cl2 → 2CuCl2 Formula 4: 2CuCl+Cl 2 → 2CuCl 2

值得注意的是,電解再生液的亞銅離子在氣液反應器中與氯氣反應生成具有蝕刻能力的銅離子,換句話說,藉由氯氣作為氧化劑以氧化電解再生液,使得其中的銅離子濃度得到再一次地提升。在多個實施例中,再生酸蝕刻液的銅離子的濃度大於電解再生液的銅離子的濃度。 It is worth noting that the cuprous ions in the electrolytic regeneration solution react with chlorine in the gas-liquid reactor to produce copper ions with etching ability. In other words, chlorine is used as an oxidant to oxidize the electrolytic regeneration solution to make the copper ion concentration Get promoted again. In many embodiments, the concentration of copper ions in the regenerated acid etching solution is greater than the concentration of copper ions in the electrolytic regeneration solution.

再生酸蝕刻廢液系統500可以進一步包含第二儲槽105,包含入口51L及出口51LE。第二儲槽105配 置以儲存電解再生液。第二儲槽的入口51L連接電解槽的液體出口31L,以接收經電解反應的待處理蝕刻液,且第二儲槽的出口51LE連接氣液反應器104的第一液體入口41L,以接收電解再生液。 The regenerated acid etching waste liquid system 500 may further include a second storage tank 105 including an inlet 51L and an outlet 51LE. The second storage tank 105 is equipped Set to store electrolytic regeneration solution. The inlet 51L of the second storage tank is connected to the liquid outlet 31L of the electrolysis tank to receive the etching solution to be processed by the electrolysis reaction, and the outlet 51LE of the second storage tank is connected to the first liquid inlet 41L of the gas-liquid reactor 104 to receive the electrolysis. Regeneration fluid.

繼續參照第1圖,氣液反應器104的第一液體出口41LE配置以輸出再生酸蝕刻液,將再生酸蝕刻液傳送至濕式蝕刻機107上使用。在多個實施例中,在濕式蝕刻機107進行的反應如式五所示,覆銅板(未繪示)上的金屬銅與氯化銅反應之後,消耗了具蝕刻能力的銅離子,且生成不具蝕刻能力的亞銅離子。 Continuing to refer to FIG. 1, the first liquid outlet 41LE of the gas-liquid reactor 104 is configured to output the regenerated acid etching solution, and the regenerated acid etching solution is sent to the wet etching machine 107 for use. In many embodiments, the reaction performed in the wet etching machine 107 is as shown in formula 5. After the metal copper on the copper clad plate (not shown) reacts with copper chloride, copper ions with etching ability are consumed, and Generate cuprous ions without etching ability.

式五:Cu+CuCl2 → 2CuCl Formula 5: Cu+CuCl 2 → 2CuCl

再生酸蝕刻廢液系統500可以進一步包含比重控制器109,配置以控制添加至濕式蝕刻機107的再生酸蝕刻液的流量,以調控濕式蝕刻機107的蝕刻液比重。 The regenerated acid etching waste solution system 500 may further include a specific gravity controller 109 configured to control the flow rate of the regenerated acid etching solution added to the wet etching machine 107 to adjust the specific gravity of the etching solution of the wet etching machine 107.

在一些實施例中,將再生酸蝕刻液傳送至濕式蝕刻機上使用之前,可選作地,添加蝕刻添加劑(未繪示)於再生酸蝕刻液。在一些實施例中,蝕刻添加劑包含氧化劑。在其他實施例中,蝕刻添加劑包含界面活性劑。 In some embodiments, before transferring the regenerated acid etching solution to the wet etching machine for use, optionally, an etching additive (not shown) is added to the regeneration acid etching solution. In some embodiments, the etching additive includes an oxidizing agent. In other embodiments, the etching additive includes a surfactant.

再生酸蝕刻廢液系統500可以進一步包含酸蝕刻廢液供應源108,氣液反應器104的第二液體入口42L連接酸蝕刻廢液供應源108。酸蝕刻廢液供應源108配置以控制由濕式蝕刻機107傳送至氣液反應器104之廢液的 流量。 The regenerated acid etching waste liquid system 500 may further include an acid etching waste liquid supply source 108, and the second liquid inlet 42L of the gas-liquid reactor 104 is connected to the acid etching waste liquid supply source 108. The acid etching waste liquid supply source 108 is configured to control the waste liquid sent from the wet etching machine 107 to the gas-liquid reactor 104 flow.

氣液反應器104進一步包含第二液體出口42LE。第二液體出口42LE連接第一儲槽102。詳細地說,經濕式蝕刻機107使用之後的廢液可以經由酸蝕刻廢液供應源108傳送至氣液反應器104,再與氣液反應器104中的氯氧進行式四的反應之後,經由第二液體出口42LE傳送至第一儲槽102準備再度回收再生。 The gas-liquid reactor 104 further includes a second liquid outlet 42LE. The second liquid outlet 42LE is connected to the first storage tank 102. In detail, the waste liquid after being used by the wet etching machine 107 can be sent to the gas-liquid reactor 104 via the acid etching waste liquid supply source 108, and then reacted with the chlorine oxygen in the gas-liquid reactor 104 after the formula 4 It is sent to the first storage tank 102 via the second liquid outlet 42LE to be recovered and regenerated again.

再生酸蝕刻廢液系統500可以進一步包含氯氣吸收器106,配置以吸收未反應的氯氣。氯氣吸收器106包含氯氣入口61G,以接收從陽極及氯氣吸收器106而來的氯氣。詳細地說,由陽極所產生的氯氣,一部份傳送至氯氣吸收器106進行反應之後,將未反應的氯氣傳送至氯氣吸收器106而被吸收,另一部份直接從陽極室傳送至氯氣吸收器106而被吸收。 The regenerated acid etching waste liquid system 500 may further include a chlorine gas absorber 106 configured to absorb unreacted chlorine gas. The chlorine gas absorber 106 includes a chlorine gas inlet 61G to receive the chlorine gas from the anode and the chlorine gas absorber 106. In detail, part of the chlorine generated by the anode is sent to the chlorine absorber 106 for reaction, and then the unreacted chlorine is sent to the chlorine absorber 106 to be absorbed, and the other part is sent directly from the anode chamber to the chlorine gas. The absorber 106 is absorbed.

基於上述的目的,氣液反應器104進一步包含氣體出口41GL。氣液反應器104的氣體出口41GL連通氯氣吸收器106的氯氣入口61G,將氯氣吸收器106中未反應完的氯氣傳送到氯氣吸收器106而被吸收。氯氣吸收器106的氯氣入口61G連通電解槽的氣體出口31G,將陽極室103B所產生氯氣直接傳送到氯氣吸收器106而被吸收。 For the above purpose, the gas-liquid reactor 104 further includes a gas outlet 41GL. The gas outlet 41GL of the gas-liquid reactor 104 is connected to the chlorine inlet 61G of the chlorine absorber 106, and the unreacted chlorine in the chlorine absorber 106 is transferred to the chlorine absorber 106 and absorbed. The chlorine gas inlet 61G of the chlorine gas absorber 106 is connected to the gas outlet 31G of the electrolytic cell, and the chlorine gas generated in the anode chamber 103B is directly transmitted to the chlorine gas absorber 106 to be absorbed.

在一些實施例中,氯氣吸收器可為鐵吸收缸,其包含氯化亞鐵、三氯化鐵及鐵屑。如式六所示,氯氣與氯化亞鐵反應生成三氯化鐵;如式七所示,三氯化鐵與鐵屑反 應而再生氯化亞鐵。在多個實施例中,三氯化鐵可以回收後外銷。 In some embodiments, the chlorine gas absorber may be an iron absorption cylinder, which includes ferrous chloride, ferric chloride, and iron filings. As shown in formula 6, chlorine gas reacts with ferrous chloride to produce ferric chloride; as shown in formula 7, ferric chloride reacts with iron filings. Instead, regenerate ferrous chloride. In many embodiments, the ferric chloride can be recovered and sold.

式六:2FeCl2+Cl2 → 2FeCl3 Formula 6: 2FeCl 2 +Cl 2 → 2FeCl 3

式七:Fe+2FeCl3→3FeCl2 Formula 7: Fe+ 2FeCl 3 →3FeCl 2

本發明的多個實施例的再生酸蝕刻廢液的系統可以進一步包含蝕刻劑儲存槽110,配置以儲存蝕刻劑,且連通濕式蝕刻機107。蝕刻劑可以從蝕刻劑儲存槽傳送至濕式蝕刻機107,以維持蝕刻劑的濃度。在多個實施例中,蝕刻劑包含HCl。在多個實施例中,蝕刻劑包含氧化劑。 The system for regenerating the acid etching waste liquid of various embodiments of the present invention may further include an etchant storage tank 110 configured to store the etchant and communicate with the wet etching machine 107. The etchant may be transferred from the etchant storage tank to the wet etcher 107 to maintain the concentration of the etchant. In various embodiments, the etchant includes HCl. In various embodiments, the etchant includes an oxidizing agent.

第2圖是依照本發明一些實施例使用第1圖的系統所繪示之再生酸蝕刻廢液的方法流程圖。方法M100包含步驟S102、步驟S104、步驟S106及步驟S108。 FIG. 2 is a flowchart of a method for regenerating the acid etching waste liquid using the system depicted in FIG. 1 according to some embodiments of the present invention. The method M100 includes step S102, step S104, step S106, and step S108.

方法M100始於步驟S102,如第1圖所示,提供待處理蝕刻液,包含銅離子、亞銅離子及氯離子。步驟S104接續步驟S102,如第1圖所示,將待處理蝕刻液傳送電解槽進行電解反應,以得到電解再生液,其中電解槽的陽極將亞銅離子轉變為銅離子,且將氯離子轉變為氯氣,電解槽的陰極將銅離子轉變為銅金屬,其中電解再生液的亞銅離子的濃度低於待處理蝕刻液中的亞銅離子的濃度。步驟S106接續步驟S104,如第1圖所示,將由陽極所得的氯氣與電解再生液反應,使電解再生液中的亞銅離子轉變銅離子,而得到再生酸蝕刻液。步驟S108接續步驟 S106,如第1圖所示,將再生酸蝕刻液傳送至濕式蝕刻機上使用。在一些實施例中,步驟S106更包含將未反應完氯氣傳送到氯氣吸收器而被吸收。在一些實施例中,在步驟S108之前,添加蝕刻添加劑於再生酸蝕刻液。 The method M100 starts at step S102. As shown in FIG. 1, an etching solution to be processed is provided, which includes copper ions, cuprous ions, and chloride ions. Step S104 is followed by step S102. As shown in Figure 1, the etching solution to be processed is transferred to the electrolytic cell for electrolysis to obtain an electrolytic regenerating solution, wherein the anode of the electrolytic cell converts cuprous ions into copper ions and changes chloride ions As chlorine gas, the cathode of the electrolytic cell converts copper ions into copper metal, and the concentration of cuprous ions in the electrolytic regeneration solution is lower than the concentration of cuprous ions in the etching solution to be processed. Step S106 is followed by step S104. As shown in Figure 1, the chlorine gas obtained from the anode is reacted with the electrolytic regenerating solution to convert the cuprous ions in the electrolytic regenerating solution to copper ions to obtain a regenerated acid etching solution. Step S108 Follow-up steps S106, as shown in Figure 1, transfer the regenerated acid etching solution to the wet etching machine for use. In some embodiments, step S106 further includes sending unreacted chlorine gas to a chlorine gas absorber for absorption. In some embodiments, before step S108, an etching additive is added to the regenerated acid etching solution.

本發明的再生酸蝕刻廢液的技術採用隔膜電解製程,通過微滲透膜將電解槽分為陰極室和陽極室,當待處理蝕刻液進入電解槽後,在電流作用下進行電解反應。在陽極室中,陽極將氯離子變成氯氣,亞銅離子變成銅離子,使蝕刻液蝕刻能力得以再生;在陰極室析出有經濟價值的副產品金屬銅。進一步地,電解再生液與陽極產出的氯氣反應,再度提升電解再生液中具有蝕刻能力之銅離子的濃度。再生蝕刻液通過比重自動控制器添加至濕式蝕刻機,以調整濕式蝕刻機內蝕刻液比重,綜上所述,達到酸性氯化銅蝕刻液銅回收和迴圈再生的雙重目的。 The technology for regenerating acid etching waste liquid of the present invention adopts a diaphragm electrolysis process. The electrolytic cell is divided into a cathode chamber and an anode chamber through a micro-permeable membrane. When the etching solution to be processed enters the electrolytic cell, the electrolytic reaction is carried out under the action of electric current. In the anode chamber, the anode changes chlorine ions into chlorine gas, and cuprous ions into copper ions, so that the etching ability of the etching solution can be regenerated; in the cathode chamber, the by-product metallic copper with economic value is precipitated. Furthermore, the electrolytic regeneration solution reacts with the chlorine produced by the anode to further increase the concentration of copper ions with etching ability in the electrolytic regeneration solution. The regeneration etching solution is added to the wet etching machine through the specific gravity automatic controller to adjust the specific gravity of the etching solution in the wet etching machine. In summary, the dual purpose of copper recovery and loop regeneration of the acid copper chloride etching solution is achieved.

本發明的再生酸蝕刻廢液的系統提供下列特點與優勢。(1)減少廢液處理量:蝕刻廢液將100%被電解,只有約5%電解後的廢液需要環保處理。(2)增加銅產量:目前蝕刻廢液含銅豐富(約150g/L),電解可以將其中95%的銅離子電解成金屬銅。(3)減少氧化劑購買:利用電解產生的氯氣作為氧化劑,有效減少氧化劑購買,節省生產成本。 The system for regenerating acid etching waste liquid of the present invention provides the following features and advantages. (1) Reduce the amount of waste liquid treatment: 100% of the etching waste liquid will be electrolyzed, and only about 5% of the electrolyzed waste liquid needs environmental protection treatment. (2) Increasing copper output: At present, the etching waste liquid is rich in copper (about 150g/L), and electrolysis can electrolyze 95% of the copper ions into metallic copper. (3) Reduce the purchase of oxidants: use the chlorine produced by electrolysis as the oxidant, which effectively reduces the purchase of oxidants and saves production costs.

雖然本發明內容已以實施方式揭露如上,然其並非用以限定本發明內容,任何熟習此技藝者,於不脫離本發明內容的精神和範圍內,當可作各種的變動與潤飾,因此 本發明內容的保護範圍當視後附的申請專利範圍及其均等方案所界定者為準。 Although the content of the present invention has been disclosed in the above embodiments, it is not intended to limit the content of the present invention. Anyone who is familiar with the art can make various changes and modifications without departing from the spirit and scope of the content of the present invention. Therefore, The scope of protection of the content of the present invention shall be subject to those defined by the attached patent application scope and its equivalent scheme.

102:第一儲槽 102: first storage tank

103:電解槽 103: Electrolyzer

1030:回收銅金屬單元 1030: Recycling copper metal unit

103A:陽極室 103A: anode chamber

103B:陰極室 103B: Cathode chamber

104:氣液反應器 104: Gas-liquid reactor

105:第二儲槽 105: second storage tank

106:氯氣吸收器 106: Chlorine Absorber

107:濕式蝕刻機 107: Wet etching machine

108:酸蝕刻廢液供應源 108: Acid etching waste liquid supply source

109:比重控制器 109: Specific gravity controller

110:蝕刻劑儲存槽 110: Etchant storage tank

31G:氣體出口 31G: Gas outlet

31L:液體出口 31L: Liquid outlet

41L:第一液體入口 41L: first liquid inlet

41LE:第一液體出口 41LE: The first liquid outlet

41G:氣體入口 41G: gas inlet

41GL:氣體出口 41GL: Gas outlet

42L:第二液體入口 42L: second liquid inlet

42LE:第二液體出口 42LE: second liquid outlet

500:再生酸蝕刻廢液系統 500: Regenerated acid etching waste liquid system

51L:入口 51L: entrance

51LE:出口 51LE: Exit

61G:氯氣入口 61G: Chlorine gas inlet

Claims (10)

一種再生酸蝕刻廢液的方法,包含:(i)提供一待處理蝕刻液,包含銅離子、亞銅離子及氯離子;(ii)將該待處理蝕刻液傳送一電解槽進行電解反應,以得到一電解再生液,其中該電解槽的一陽極將亞銅離子轉變為銅離子,且將氯離子轉變為氯氣,該電解槽的一陰極將銅離子轉變為銅金屬,其中該電解再生液的亞銅離子的濃度低於該待處理蝕刻液中的亞銅離子的濃度;(iii)將由該陽極所得的該氯氣與該電解再生液分別傳送至一氣液反應器進行反應,使該電解再生液中的亞銅離子轉變銅離子,而得到一再生酸蝕刻液;以及(iv)將該再生酸蝕刻液傳送至一濕式蝕刻機上使用。 A method for regenerating acid etching waste liquid, comprising: (i) providing an etching solution to be processed, including copper ions, cuprous ions, and chloride ions; (ii) transporting the etching solution to be processed to an electrolytic cell for electrolytic reaction, to Obtain an electrolytic regenerating solution, wherein an anode of the electrolytic cell converts cuprous ions into copper ions and chlorine ions into chlorine gas, and a cathode of the electrolytic cell converts copper ions into copper metal. The concentration of cuprous ions is lower than the concentration of cuprous ions in the etching solution to be processed; (iii) the chlorine gas obtained from the anode and the electrolytic regeneration solution are respectively sent to a gas-liquid reactor for reaction, so that the electrolytic regeneration solution The cuprous ions in the copper ions are converted to copper ions to obtain a regenerated acid etching solution; and (iv) the regenerated acid etching solution is transferred to a wet etching machine for use. 如請求項1所述的方法,其中步驟(iii)更包含將未反應完氯氣傳送到一氯氣吸收器而被吸收。 The method according to claim 1, wherein step (iii) further comprises sending unreacted chlorine gas to a chlorine gas absorber to be absorbed. 如請求項1所述的方法,其中在步驟(iv)之前,添加一蝕刻添加劑於該再生酸蝕刻液。 The method according to claim 1, wherein before step (iv), an etching additive is added to the regenerated acid etching solution. 如請求項1所述的方法,其中該待處理蝕刻液包含CuCl2The method according to claim 1, wherein the etching solution to be processed contains CuCl 2 . 如請求項1所述的方法,其中該待處理蝕刻液包含HCl。 The method according to claim 1, wherein the etching solution to be processed contains HCl. 一種再生酸蝕刻廢液的系統,包含:一第一儲槽,配置以儲存一待處理蝕刻液;一電解槽,配置以接收該待處理蝕刻液,以及對該待處理蝕刻液進行一電解反應,其中該電解槽包含一第一氣體出口以及一液體出口;一氣液反應器,配置以處理經該電解反應的該待處理蝕刻液,而得到一再生酸蝕刻液,該氣液反應器包含:一第一液體入口,連通該電解槽的該液體出口,以接收經該電解反應的該待處理蝕刻液;一第二液體入口,連接一酸蝕刻廢液供應源;一氣體入口,連接該電解槽的該第一氣體出口;以及一第一液體出口,配置以輸出該再生酸蝕刻液。 A system for regenerating acid etching waste liquid, comprising: a first storage tank configured to store an etching solution to be processed; an electrolytic tank configured to receive the etching solution to be processed, and perform an electrolytic reaction on the etching solution to be processed , Wherein the electrolytic tank includes a first gas outlet and a liquid outlet; a gas-liquid reactor configured to process the etching solution to be processed by the electrolysis reaction to obtain a regenerated acid etching solution, and the gas-liquid reactor includes: A first liquid inlet connected to the liquid outlet of the electrolytic cell to receive the etching solution to be treated after the electrolysis reaction; a second liquid inlet connected to an acid etching waste liquid supply source; a gas inlet connected to the electrolysis The first gas outlet of the tank; and a first liquid outlet configured to output the regenerated acid etching solution. 如請求項6所述的系統,更包含一第二儲槽,該第二儲槽的一入口連接該電解槽的該液體出口,以接收經該電解反應的該待處理蝕刻液,且該第二儲槽的一出口連接該氣液反應器的該第一液體入口。 The system according to claim 6, further comprising a second storage tank, an inlet of the second storage tank is connected to the liquid outlet of the electrolysis tank to receive the etching solution to be treated after the electrolysis reaction, and the second storage tank An outlet of the two storage tanks is connected to the first liquid inlet of the gas-liquid reactor. 如請求項7所述的系統,更包含:一氯氣吸收器,配置以吸收氯氣,該氯氣吸收器包含: 一氯氣入口,連通該電解槽的該第二氣體出口。 The system according to claim 7, further comprising: a chlorine gas absorber configured to absorb chlorine gas, the chlorine gas absorber comprising: A chlorine gas inlet is connected to the second gas outlet of the electrolytic cell. 如請求項8所述的系統,其中該氣液反應器更包含:一第二氣體出口,連通該氯氣吸收器的該氯氣入口;以及一第二液體出口,連接該第一儲槽。 The system according to claim 8, wherein the gas-liquid reactor further comprises: a second gas outlet connected to the chlorine inlet of the chlorine absorber; and a second liquid outlet connected to the first storage tank. 如請求項6所述的系統,其中該氣液反應器的該第一液體出口連通一濕式蝕刻機。 The system according to claim 6, wherein the first liquid outlet of the gas-liquid reactor is connected to a wet etching machine.
TW109112040A 2020-04-09 2020-04-09 Method and system for regenerating acid etching waste liquid TWI726677B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103628064A (en) * 2012-08-24 2014-03-12 成都虹华环保科技有限公司 Recycling system of acid etching liquid
TW201708615A (en) * 2015-08-31 2017-03-01 葉旖婷 Method for electrolytic recycling and regenerating acidic cupric chloride etchants
TW201800614A (en) * 2016-06-24 2018-01-01 惠州市臻鼎環保科技有限公司 Acid copper chloride spent etchant recycling apparatus and method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103628064A (en) * 2012-08-24 2014-03-12 成都虹华环保科技有限公司 Recycling system of acid etching liquid
TW201708615A (en) * 2015-08-31 2017-03-01 葉旖婷 Method for electrolytic recycling and regenerating acidic cupric chloride etchants
TW201800614A (en) * 2016-06-24 2018-01-01 惠州市臻鼎環保科技有限公司 Acid copper chloride spent etchant recycling apparatus and method thereof

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