TWI724777B - Power control circuit - Google Patents
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- TWI724777B TWI724777B TW109103379A TW109103379A TWI724777B TW I724777 B TWI724777 B TW I724777B TW 109103379 A TW109103379 A TW 109103379A TW 109103379 A TW109103379 A TW 109103379A TW I724777 B TWI724777 B TW I724777B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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本發明係關於一被動式填谷式(valley-fill)功率因子校正(power factor correction,PFC)架構,其將交流電壓轉換為一直流電壓,尤其關於開關模式電源(switching-mode power supply,SMPS)在電磁干擾(electromagnetic interference,EMI)上的改良。 The present invention relates to a passive valley-fill (valley-fill) power factor correction (PFC) architecture, which converts AC voltage to DC voltage, especially regarding switching-mode power supply (SMPS) Improvements in electromagnetic interference (EMI).
功率因子對於判斷電子產品是否有效地工作而言是很重要的,功率因子可透過將實功率(real power)與視在功率(apparent power)進行比較來計算。實功率係用來表示工作的有效性,並且僅包括交流電源的實部成份,而視在功率則是電流與電壓的平均乘積,包括交流電源的實部分量以及虛部分量。 The power factor is very important for judging whether the electronic product works effectively. The power factor can be calculated by comparing the real power with the apparent power. Real power is used to express the effectiveness of work and only includes the real component of AC power, while apparent power is the average product of current and voltage, including the real and imaginary components of AC power.
在產生相同大小的可用電源的情況下,具有較低功率因子的電源系統會比具有較高功率因子的電源系統消耗更多的循環電流(circulating current),這是因為返回到負載的電源較大,導致增加分配系統(distribution system)整體的電源損耗。換言之,較低的功率因子代表著操作效率也隨之較低,這導致裝置需要更大的容量以及更多的導體。根據能源之星規範(ENERGY STAR Lamps V2.1 Final Specification),對於總輸出功率小於5瓦特(watts)的照明產品的規定是功率因子必須大於0.5,且對於總輸出功率大於5瓦特的照明產品的規定是功率 因子必須大於0.7。 In the case of generating usable power of the same size, a power system with a lower power factor will consume more circulating current than a power system with a higher power factor, because the power returned to the load is larger , Resulting in an increase in the overall power loss of the distribution system. In other words, a lower power factor means that the operating efficiency is also lower, which causes the device to require a larger capacity and more conductors. According to the ENERGY STAR Lamps V2.1 Final Specification, for lighting products with a total output power of less than 5 watts (watts), the power factor must be greater than 0.5, and for lighting products with a total output power greater than 5 watts The rule is power The factor must be greater than 0.7.
填谷式電路對於調整產品的功率因子扮演著重要的角色,其係為一種被動式功率因子校正(power factor correction,PFC)電路。請參考第1A圖,其係為習知的功率因子控制電路100的示意圖,如第1A圖所示,功率因子控制電路100包含交流電源10、二極體-橋式整流器(diode-bridge rectifier)15、EMI模組20、填谷式電路30、開關模式電源(switching-mode power supply,SMPS)40以及LED陣列50。EMI模組20係耦接於交流電源10,並且用來降低EMI排放。填谷式電路30係耦接於EMI模組20,並且用來改善功率因子控制電路100的功率因子。然而,功率因子控制電路100中設置有許多被動式元件,故需要填谷式電路30以及EMI模組20以分別改善功率因子以及降低EMI排放。
The valley-fill circuit plays an important role in adjusting the power factor of the product, and it is a passive power factor correction (PFC) circuit. Please refer to Figure 1A, which is a schematic diagram of a conventional power
此外,將交流電壓應用至功率因子控制電路100時,整流電壓會透過D2、Rv來對多個電容器(例如電容器CV1、CV2)進行充電,直到充至將近線電壓峰值的一半(參考第1A圖中的虛線箭頭所示的充電方向)。若是操作在谷相位(valley phase)則代表線電壓降至低於電壓峰值,此時CV1以及CV2會放電至負載(參考第1B圖中虛線箭頭所示的放電方向)。進一步而言,功率因子控制電路100係以串聯的方式充電並且以並聯的方式來放電,如此造成電流的不對稱性,可能導致更嚴重的總諧波失真(total harmonic distortions,THD)。綜上所述,實有需要一種新穎的方法以及架構來改善應用於電子裝置(諸如照明裝置)的SMPS驅動器的整體功率因子。
In addition, when AC voltage is applied to the power
本發明的一實施例提供一種電源控制電路,其包含有交流電源 (alternating current,AC)、整流器以及填谷式電路(valley-fill circuit)。該交流電源用以接收一交流電壓;該整流器用以將該交流電壓轉換為一整流的電壓;以及該填谷式電路包含有:一電感器,具有一第一端點,其耦接於該整流器,以及具有一第二端點;一第一電阻器,具有一第一端點,其耦接於該電感器的該第二端點,以及具有一第二端點;一二極體,具有一陰極,其耦接於該電感器的該第二端點,以及具有一陽極;以及一第一電容器,具有一第一端點,其耦接於該第一電阻器的該第二端點以及該二極體的該陽極,以及具有一第二端點,其耦接於地端。 An embodiment of the present invention provides a power control circuit, which includes an AC power supply (alternating current, AC), rectifier and valley-fill circuit. The AC power supply is used for receiving an AC voltage; the rectifier is used for converting the AC voltage into a rectified voltage; and the valley-filling circuit includes: an inductor having a first terminal coupled to the Rectifier, and has a second terminal; a first resistor, has a first terminal, which is coupled to the second terminal of the inductor, and has a second terminal; a diode, Having a cathode coupled to the second end of the inductor and having an anode; and a first capacitor having a first end coupled to the second end of the first resistor Point and the anode of the diode, and have a second terminal, which is coupled to the ground terminal.
100,200,300,500:功率因子控制電路 100, 200, 300, 500: power factor control circuit
10:交流電源 10: AC power
15:二極體-橋式整流器 15: Diode-bridge rectifier
20:EMI模組 20: EMI module
30:填谷式電路 30: Valley-filling circuit
40:開關模式電源 40: switch mode power supply
50:LED陣列 50: LED array
D,D1,D2,D3:二極體 D, D1, D2, D3: Diode
Rv,RF:電阻器 Rv, R F : resistor
CV,CV1,CV2,CF1,CF2:電容器 C V , C V1 , C V2 , C F1 , C F2 : Capacitor
VOUT:輸出電壓 V OUT : output voltage
Vrec:電壓節點 V rec : voltage node
L:電感器 L: Inductor
D:二極體 D: Diode
210:交流電流源 210: AC current source
220:保險絲 220: fuse
230:金氧壓敏電阻單元 230: Metal Oxygen Varistor Unit
240:整流電路 240: rectifier circuit
250:開關模式電源 250: switch mode power supply
260:LED陣列 260: LED array
270,370,570:填谷式電路 270,370,570: Valley-filling circuit
Vm:電壓峰值 Vm: peak voltage
V1,V2,VLED_max:電壓值 V1, V2, V LED_max : voltage value
t1,t2:時間點 t1, t2: time point
第1A圖係為習知的功率因子控制電路的示意圖。 Figure 1A is a schematic diagram of a conventional power factor control circuit.
第1B圖係為第1A圖中所示習知的功率因子控制電路的放電操作的示意圖。 FIG. 1B is a schematic diagram of the discharge operation of the conventional power factor control circuit shown in FIG. 1A.
第2圖係為根據本發明一實施例的功率因子控制電路的示意圖。 FIG. 2 is a schematic diagram of a power factor control circuit according to an embodiment of the invention.
第3圖係為根據本發明另一實施例的功率因子控制電路的示意圖。 FIG. 3 is a schematic diagram of a power factor control circuit according to another embodiment of the invention.
第4圖係為第3圖中所示的填谷式電路的輸出的示意圖。 Figure 4 is a schematic diagram of the output of the valley filling circuit shown in Figure 3.
第5圖係為根據本發明另一實施例的功率因子控制電路的示意圖。 Fig. 5 is a schematic diagram of a power factor control circuit according to another embodiment of the present invention.
在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解,硬體製造商可能會用不同的名詞來稱呼同樣的元件。本說明書及後續的申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及後續的請求項當中所提及的「包含」係為一開放式的用語,故應解釋成「包 含但不限定於」。另外,「耦接」一詞在此係包含任何直接及間接的電氣連接手段。因此,若文中描述一第一裝置耦接於一第二裝置,則代表該第一裝置可直接電氣連接於該第二裝置,或透過其他裝置或連接手段間接地電氣連接至該第二裝置。 In the specification and subsequent patent applications, certain words are used to refer to specific elements. Those with general knowledge in the field should understand that hardware manufacturers may use different terms to refer to the same components. The scope of this specification and subsequent patent applications does not use differences in names as a way of distinguishing elements, but uses differences in functions of elements as a criterion for distinguishing. The "include" mentioned in the entire manual and subsequent requests is an open term, so it should be interpreted as "includes Including but not limited to". In addition, the term "coupling" here includes any direct and indirect electrical connection means. Therefore, if it is described that a first device is coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connection means.
上述習知技術的解決方案(或習知技術的解決方案)係在提高成本、提高設計複雜度、增加被動元件數量(會相應地需要更大的電路面積)等等的情況下達到所需的功率控制能力,而本發明實施例所提供的新穎電路設計其具有降低的成本以及簡化的複雜度。 The above-mentioned conventional technology solution (or conventional technology solution) is to achieve the required under the condition of increasing cost, increasing design complexity, increasing the number of passive components (which will correspondingly require larger circuit area), etc. Power control capability, and the novel circuit design provided by the embodiments of the present invention has reduced cost and simplified complexity.
請參考第2圖,第2圖係為根據本發明一實施例的功率因子控制電路200的示意圖。如圖2所示,電感器L、二極體D、電阻器RV以及電容器CV可被共同視為一整合的EMI填谷式電路(即填谷式電路270),用以在不具前述缺點的情況下仍能夠提供理想的技術效果。除了填谷式電路270,功率因子控制電路200還包含交流電流源210、保險絲220、金氧壓敏電阻(metal-oxide varistor,MOV)單元230、整流電路240、開關模式電源(switching-mode power supply,SMPS)250以及LED陣列260。只要能夠達到相同/相仿的技術效果,第2圖中所描繪的一些元件可視實際設計需求予以省略。
Please refer to FIG. 2, which is a schematic diagram of a power
金氧壓敏電阻230係為具有電阻值的電子元件,其電阻值會隨著所施加的電壓不同而變化。金氧壓敏電阻230又被稱為壓敏電阻(voltage-dependent resistor,VDR),其具有非線性(nonlinear)、非歐姆性(non-ohmic)的電流-電壓特性,故相似於二極體。與二極管相反,壓敏電阻在兩個橫向電流方向上具有相同的特性。金氧壓敏電阻230可使用作為功率因子控制電路200中的控制或
補償元件,以提供優化的操作條件或對於過大的瞬態電壓(transient voltage)提供防治。
The gold-
整流電路240可為二極體-橋式整流器(或稱為橋式整流器),舉例而言(但不用以限定),二極體橋式整流器係為四個二極體所構成的橋式電路配置,其對輸出端提供了與輸入端相同的極性。橋式整流器被廣泛地應用於將交流電流輸入轉換為直流電流輸出。
The
開關模式電源250透過頻繁地對開關裝置進行開/關操作來轉換電源,並且於開關裝置處於非導通的狀態下利用儲存元件(諸如電感器或電容器)來進行供電。SMPS可用來對許多設備進行供電,諸如電腦設備、敏感的電子設備、仰賴電池供電的裝置,以及其他需要高效能供電的設備。
The switch-
進一步而言,電感器L以及電容器CV的配置可為功率因子控制電路200提供EMI抑制功能(EMI-suppressing ability),而二極體D、電阻器RV以及電容器CV的配置可為功率因子控制電路200提供填谷功能,其中二極體D、電阻器RV以及電容器CV的組合可提供近似於第1圖中所示RV、電容器CV以及二極體D3的功能。相較於第1A圖/第1B圖所示的充/放電方式,第2圖所示的充/放電方式可進一步改善對稱性(symmetry)的表現,因而解決習知術所面臨的技術問題。
Furthermore, the configuration of the inductor L and the capacitor C V can provide the power
請參考第3圖,第3圖係為根據本發明另一實施例的功率因子控制電路300的示意圖。功率因子控制電路300與功率因子控制電路200的差別在於,功率因子控制電路300中的填谷式電路370另包含電阻器RF以及電容器CF1。電容器
CF1、電感器L以及電容器CV的組合構成了一π型EMI電路,其可提供較佳的EMI抑制特性。
Please refer to FIG. 3, which is a schematic diagram of a power
為了確保開關模式電源250接收到優化後的輸入電壓,諸如第4圖中所示由填谷式電路370所輸出的整流後的正弦波,電容器CV的電容值應被進一步設計為符合特定條件,以第4圖為例,水平的虛線表示提供給LED陣列260的電壓,其大小為VLED_max。鋸齒狀虛線的上升部份表示一充電期間,而鋸齒狀虛線的下降部份表示維持期間(holding period)。VLED_max近乎恆定的能夠提供仔細設計的C V 值(其中斜體的C V 表示電容器CV的電容值),其中C V 值可從以下方程式推導:
請參考方程式1,C V 必須大於或等於給定值,以使LED陣列260能獲得所需的電源電壓,其中△VC代表V C 的電壓變化,Iload,max代表輸出負載的最大電流,Vm,min代表電壓振幅Vm的峰值的最小值,以及tHold代表電容器放電時間,其
可通過方程式2來計算。在方程式3中,電容器充電時間tchg可藉由自週期1/2f減去tHold來得到。Ichg係於方程式4中定義,且方程式6中的結果可簡單由方程式4以及方程式5來推得。此外,Ichg代表充電電流,以及R V 代表電阻器RV的電阻值。最後,方程式7中的結果可藉由將方程式6帶入方程式1來得到。
Please refer to
第5圖係為根據本發明另一實施例的功率因子控制電路500的示意圖,功率因子控制電路300與功率因子控制電路500的差別在於,在功率因子控制電路500中,填谷式電路570還包含電容器CF2,其有助於進一步提供優化的輸出。本實施例中一些元件係相同或相仿於以上實施例中的元件,為簡潔之故,詳細說明在此省略。
Figure 5 is a schematic diagram of a power
如上所述,本發明的實施例可在具有降低的成本以及簡化的複雜度的情況下改善電源控制電路的整體功率因子,以及提供EMI抑制能力。舉例來說,本發明的實施例採用了整合式EMI填谷電路的設計,其僅需要較少元件且不影響所欲達到的技術效果(相較於第1A、1B圖中習知技術的解決方案)。 As described above, the embodiments of the present invention can improve the overall power factor of the power supply control circuit and provide EMI suppression capabilities with reduced cost and simplified complexity. For example, the embodiment of the present invention adopts the design of an integrated EMI valley-filling circuit, which only requires fewer components and does not affect the desired technical effect (compared to the solution of the prior art in Figures 1A and 1B) Program).
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The foregoing descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made in accordance with the scope of the patent application of the present invention should fall within the scope of the present invention.
200:功率因子控制電路 200: Power factor control circuit
D:二極體 D: Diode
Rv:電阻器 Rv: resistor
CV:電容器 C V : Capacitor
VOUT:輸出電壓 V OUT : output voltage
Vrec:電壓節點 V rec : voltage node
L:電感器 L: Inductor
D:二極體 D: Diode
210:交流電流源 210: AC current source
220:保險絲 220: fuse
230:金氧壓敏電阻單元 230: Metal Oxygen Varistor Unit
240:整流電路 240: rectifier circuit
250:開關模式電源 250: switch mode power supply
260:LED陣列 260: LED array
270:填谷式電路 270: Valley Filling Circuit
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US9572206B2 (en) * | 2013-05-14 | 2017-02-14 | Atmel Corporation | Active valley fill power factor correction |
TWM477112U (en) * | 2013-06-19 | 2014-04-21 | Wintek Corp | Illumination device power control module |
CN103762868A (en) * | 2014-02-12 | 2014-04-30 | 魏其萃 | High-power factor active valley-fill type alternating current and direct current converter |
CN104079185A (en) * | 2014-06-18 | 2014-10-01 | 广州金升阳科技有限公司 | Valley fill circuit with protection function |
TW201838479A (en) * | 2017-04-05 | 2018-10-16 | 晶元光電股份有限公司 | Led driver |
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