TWI724487B - Current controlling device - Google Patents

Current controlling device Download PDF

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TWI724487B
TWI724487B TW108127787A TW108127787A TWI724487B TW I724487 B TWI724487 B TW I724487B TW 108127787 A TW108127787 A TW 108127787A TW 108127787 A TW108127787 A TW 108127787A TW I724487 B TWI724487 B TW I724487B
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current control
conductive substrate
current
control device
item
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TW108127787A
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TW202107952A (en
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蔡秉諭
林煜喆
陳忠慶
洪鄰安
陳怡君
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瑩耀科技股份有限公司
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Abstract

A current controlling device includes a conductive substrate and at least one current controlling structure. The at least one current controlling structure is formed on the conductive substrate. When a current is inputted into the conductive substrate, the current is blocked or split, thereby forming a uniform current intensity distribution on the conductive substrate. Therefore, the current controlling device has a uniform current intensity in a large area, and can be applied on a large area display device with uniform brightness and color distribution.

Description

電流控制裝置 Current control device

本發明係關於一種控制裝置,特別是關於一種可使電流強度分佈均勻之電流控制裝置。 The present invention relates to a control device, in particular to a current control device that can make the current intensity distribution uniform.

現代電子器件,多需要供電啟動。因此,電流源或電壓源為必須。此外,隨電子器件結構的不同複雜程度,其所使用之均流裝置亦具有不同的架構。舉例而言,基於現代人對於視覺娛樂的需求,顯示器尺寸已逐漸朝向大尺寸方向發展。當顯示器尺寸越大,其內之均流裝置之架構越複雜,因此,對電流分佈之控制越困難。現今此種大型顯示器,仍遭遇因電流分佈不均,致使其亮度或色彩不均的問題。因此,仍須發展可均勻控制電流強度分佈的電流控制裝置。 Modern electronic devices often require power supply to start. Therefore, a current source or a voltage source is necessary. In addition, with the different complexity of the structure of the electronic device, the current sharing device used in it also has a different structure. For example, based on the demand of modern people for visual entertainment, the size of the display has gradually developed in the direction of large size. As the size of the display is larger, the structure of the current sharing device is more complicated, and therefore, it is more difficult to control the current distribution. Nowadays, such large displays still suffer from uneven current distribution, resulting in uneven brightness or color. Therefore, it is still necessary to develop a current control device that can uniformly control the current intensity distribution.

依據本發明一實施方式,提供一種電流控制裝置,其包含一導電基材以及至少一電流控制結構。至少一電流控制結構形成於導電基材上。其中當自導電基材輸入一電流時,透過至少一電流控制結構令電流被截斷或分流,令導電基材上形成均勻之一電流強度分佈。 According to one embodiment of the present invention, a current control device is provided, which includes a conductive substrate and at least one current control structure. At least one current control structure is formed on the conductive substrate. When a current is input from the conductive substrate, the current is cut off or shunted through at least one current control structure, so that a uniform current intensity distribution is formed on the conductive substrate.

於上述實施方式的電流控制裝置中,導電基材之材質可為一銦錫氧化物。 In the current control device of the above embodiment, the material of the conductive substrate may be an indium tin oxide.

於上述實施方式的電流控制裝置中,電流控制結構可為一溝槽。 In the current control device of the above embodiment, the current control structure may be a groove.

於上述實施方式的電流控制裝置中,溝槽可透過一物理性破壞方式或一化學性破壞方式形成。 In the current control device of the above embodiment, the trench can be formed by a physical destruction method or a chemical destruction method.

於上述實施方式的電流控制裝置中,電流控制結構之數量為二或以上。各電流控制結構彼此平行或垂直間隔排列。 In the current control device of the above embodiment, the number of current control structures is two or more. The current control structures are arranged in parallel or perpendicularly spaced apart from each other.

於上述實施方式的電流控制裝置中,各電流控制結構間之一垂直距離可相同或相異。 In the current control device of the above embodiment, one of the vertical distances between the current control structures may be the same or different.

依據本發明另一實施方式,提供一種電流控制裝置,其包含一導電基材以及至少一電流控制結構。至少一電流控制結構形成於導電基材上。其中當自導電基材輸入一電流時,透過至少一電流控制結構令電流被增益或分流,令導電基材上形成均勻之一電流強度分佈。 According to another embodiment of the present invention, a current control device is provided, which includes a conductive substrate and at least one current control structure. At least one current control structure is formed on the conductive substrate. When a current is input from the conductive substrate, the current is increased or shunted through at least one current control structure, so that a uniform current intensity distribution is formed on the conductive substrate.

於上述實施方式的電流控制裝置中,導電基材之材質可為一銦錫氧化物、氟摻雜氧化錫導電玻璃、銻摻雜氧化錫、鋁摻雜氧化鋅、鎵摻雜氧化鋅或銦摻雜氧化鋅。 In the current control device of the above embodiment, the material of the conductive substrate can be an indium tin oxide, fluorine-doped tin oxide conductive glass, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, or indium Doped with zinc oxide.

於上述實施方式的電流控制裝置中,電流控制結構包含一可導電材質。 In the current control device of the above embodiment, the current control structure includes a conductive material.

於上述實施方式的電流控制裝置中,電流控制結構可透過點膠、網印、蒸鍍、濺鍍、塗佈、噴霧、物理沉積或化學沉積形成於導電基材上。 In the current control device of the above embodiment, the current control structure can be formed on the conductive substrate through dispensing, screen printing, evaporation, sputtering, coating, spraying, physical deposition or chemical deposition.

於上述實施方式的電流控制裝置中,電流控制結構之數量為二或以上。各電流控制結構可形成於導電基材上之一中央區域或一邊緣區域。 In the current control device of the above embodiment, the number of current control structures is two or more. Each current control structure can be formed on a central area or an edge area on the conductive substrate.

依據本發明又一實施方式,提供一種電流控制裝置,包含一導電基材以及至少一電流控制單元。至少一電流控制單元導通連接於導電基材外部。其中當自導電基材輸入一電流時,透過至少一電流控制單元令電流於導電基材外被分流,令導電基材上形成均勻之一電流強度分佈。 According to another embodiment of the present invention, a current control device is provided, which includes a conductive substrate and at least one current control unit. At least one current control unit is conductively connected to the outside of the conductive substrate. When a current is input from the conductive substrate, the current is shunted outside the conductive substrate through at least one current control unit, so that a uniform current intensity distribution is formed on the conductive substrate.

於上述實施方式的電流控制裝置中,電流控制單元可為一導電線或一可變電阻。 In the current control device of the above embodiment, the current control unit may be a conductive wire or a variable resistor.

於上述實施方式的電流控制裝置中,電流控制單元之一端連接導通導電基材之一端,電流控制單元之另一端連接導通導電基材之另一端。 In the current control device of the above embodiment, one end of the current control unit is connected to one end of the conductive substrate, and the other end of the current control unit is connected to the other end of the conductive substrate.

100‧‧‧電流控制裝置 100‧‧‧Current control device

101‧‧‧電流控制結構 101‧‧‧Current control structure

102‧‧‧電流控制結構 102‧‧‧Current control structure

103‧‧‧電流控制結構 103‧‧‧Current control structure

104‧‧‧狹縫 104‧‧‧Slit

105‧‧‧電流控制結構 105‧‧‧Current control structure

106‧‧‧電流控制單元 106‧‧‧Current Control Unit

110‧‧‧導電基材 110‧‧‧Conductive substrate

A‧‧‧區域 A‧‧‧area

B‧‧‧區域 B‧‧‧area

I‧‧‧電流 I‧‧‧Current

d1‧‧‧垂直距離 d1‧‧‧Vertical distance

d2‧‧‧垂直距離 d2‧‧‧Vertical distance

第1圖係繪示一電流輸入至一導電基材之電流分佈狀況示意圖;第2圖係繪示本發明之電流控制裝置之第一種架構示意圖;第3圖係繪示本發明之電流控制裝置之第二種架構示意圖;第4圖係繪示本發明之電流控制裝置之第三種架構示意圖;第5圖係繪示本發明之電流控制裝置之第四種架構示意圖;以及第6圖係繪示本發明之電流控制裝置之第五種架構示意圖。 Figure 1 is a schematic diagram of the current distribution of a current input to a conductive substrate; Figure 2 is a schematic diagram of the first structure of the current control device of the present invention; Figure 3 is a schematic diagram of the current control of the present invention A schematic diagram of the second structure of the device; Figure 4 is a schematic diagram of the third structure of the current control device of the present invention; Figure 5 is a schematic diagram of the fourth structure of the current control device of the present invention; and Figure 6 It is a schematic diagram showing the fifth structure of the current control device of the present invention.

於下列的描述中,將參照所附圖式說明本新型之具體實施例。許多實務上的細節將在以下敘述中一併說明。然而,這些實務上的細節不應該用以限制本新型。亦即,在本新型部分實施例中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之;並且重複之元件將可能使用相同的編號表示之。 In the following description, specific embodiments of the present invention will be described with reference to the accompanying drawings. Many practical details will be explained in the following description. However, these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some conventionally used structures and elements will be drawn in a simple schematic manner in the drawings; and repeated elements may be represented by the same numbers.

請參照第1圖。第1圖係繪示一電流I輸入至一導電基材110之電流分佈狀況示意圖。第1圖中,一電流I自導電基材110之一端輸入導電基材110。此時,電流I係擴散分佈於導電基材110上。然而,於靠近電流I之輸入端,其電流強度較強,而隨著越遠離導電基材110之輸入端,其電流強度將越減弱。換言之,第1圖中之區域A與區域B之電流強度分佈將不相等。區域A因靠近電流I之輸入端,其電流強度分佈將大於較遠離電流I之輸入端之區域B之電流強度分佈。習知解決此種電流強度分佈不均之方式,係由導電基材110之輸入端注入更大電流,然而其注入之比例不僅難以控制,且經常發生使元件燒毀之狀況。 Please refer to Figure 1. FIG. 1 is a schematic diagram showing the current distribution of a current I input to a conductive substrate 110. In FIG. 1, a current I is input into the conductive substrate 110 from one end of the conductive substrate 110. At this time, the current I is diffused and distributed on the conductive substrate 110. However, at the input terminal close to the current I, the current intensity is stronger, and as the distance from the input terminal of the conductive substrate 110 is, the current intensity decreases. In other words, the current intensity distributions of area A and area B in Figure 1 will not be equal. Since the area A is close to the input terminal of the current I, its current intensity distribution will be greater than that of the area B farther away from the input terminal of the current I. The conventional method to solve this uneven current intensity distribution is to inject a larger current from the input end of the conductive substrate 110. However, the injection ratio is not only difficult to control, but also often causes the device to burn out.

第2圖係繪示本發明之電流控制裝置100之第一種架構示意圖。第2圖中,電流控制裝置100包含一導電基材110、多個電流控制結構101、多個電流控制結構102及多個電流控制結構103。電流I自導電基材110之一端輸入導電基材 110,並擴散分佈於導電基材110上。各電流控制結構101間、各電流控制結構102間以及各電流控制結構103間彼此皆平行間隔排列。並且,各電流控制結構101間、各電流控制結構102間以及各電流控制結構103間形成一狹縫104。導電基材110之材質可為一銦錫氧化物(ITO),但不以此為限,亦可為氟摻雜氧化錫(FTO)、銻摻雜氧化錫(ATO)、鋁摻雜氧化鋅(AZO)、鎵摻雜氧化鋅(GZO)或銦摻雜氧化鋅(IZO)等透明導電膜。電流控制結構101、102、103可為一溝槽。當電流I流經溝槽時,將被截斷,因此由狹縫104分流而出。藉由此種方式,令靠近輸入端之電流I之強度減弱,令導電基材110上形成均勻之電流強度分佈。各電流控制結構101間及各電流控制結構102間相距一垂直距離d1;各電流控制結構102間及各電流控制結構103間相距一垂直距離d2。垂直距離d1及垂直距離d2可相同或相異,可視不同狀況調整電流I之分流比例。電流控制結構101、102、103可透過物理性或化學性破壞方式形成,例如雷射切割、研磨、刀具切割、離子束(或電子束)轟擊、化學蝕刻等,並無特別限制。 FIG. 2 is a schematic diagram of the first structure of the current control device 100 of the present invention. In FIG. 2, the current control device 100 includes a conductive substrate 110, a plurality of current control structures 101, a plurality of current control structures 102, and a plurality of current control structures 103. The current I is input into the conductive substrate from one end of the conductive substrate 110 110, and diffusely distributed on the conductive substrate 110. The current control structures 101, the current control structures 102, and the current control structures 103 are arranged in parallel and spaced apart from each other. In addition, a slit 104 is formed between each current control structure 101, between each current control structure 102, and between each current control structure 103. The material of the conductive substrate 110 can be an indium tin oxide (ITO), but is not limited to this, and can also be fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), or aluminum-doped zinc oxide. (AZO), gallium doped zinc oxide (GZO) or indium doped zinc oxide (IZO) and other transparent conductive films. The current control structure 101, 102, 103 may be a trench. When the current I flows through the trench, it will be cut off, so it is shunted out by the slit 104. In this way, the intensity of the current I close to the input terminal is weakened, and a uniform current intensity distribution is formed on the conductive substrate 110. The current control structures 101 and the current control structures 102 are separated by a vertical distance d1; the current control structures 102 and the current control structures 103 are separated by a vertical distance d2. The vertical distance d1 and the vertical distance d2 can be the same or different, and the shunt ratio of the current I can be adjusted according to different conditions. The current control structures 101, 102, 103 can be formed through physical or chemical destruction methods, such as laser cutting, grinding, knife cutting, ion beam (or electron beam) bombardment, chemical etching, etc., and there is no particular limitation.

現一併參照第3圖及第4圖。第3圖係繪示本發明之電流控制裝置100之第二種架構示意圖。第4圖係繪示本發明之電流控制裝置100之第三種架構示意圖。第3圖及第4圖中,電流控制裝置100皆包含一導電基材110以及至少一電流控制結構105。電流I自導電基材110之一端輸入導電基材110,並擴散分佈於導電基材110上。電流控制結構105可為一導電單元。導電單元可透過點膠、網印、蒸鍍、濺鍍、塗佈、 噴霧、物理沉積或化學沉積等方式形成於導電基材110上,並無特別限制。於一實施例中,電流控制結構105包含可導電材質(金屬或導電高分子等)。藉此,當電流I流經電流控制結構105時,透過電流控制結構105之連通導電,令離輸入端較近且具較強電流強度之區域之電流,可對離輸入端較遠且具較弱電流強度之區域之電流進行增益且分流,令導電基材110上形成均勻之電流強度分佈。第3圖中,電流控制結構105形成於導電基材110之邊緣區域;第4圖中,電流控制結構105則形成於導電基材110之中央區域。透過於導電基材110上不同位置形成之電流控制結構105,可獲得不同之電流強度增益效果。 Now refer to Figure 3 and Figure 4 together. FIG. 3 is a schematic diagram of the second structure of the current control device 100 of the present invention. FIG. 4 is a schematic diagram of a third structure of the current control device 100 of the present invention. In FIGS. 3 and 4, the current control device 100 includes a conductive substrate 110 and at least one current control structure 105. The current I is input into the conductive substrate 110 from one end of the conductive substrate 110, and is diffused and distributed on the conductive substrate 110. The current control structure 105 can be a conductive unit. The conductive unit can be through dispensing, screen printing, evaporation, sputtering, coating, It is formed on the conductive substrate 110 by spraying, physical deposition or chemical deposition, etc., and there is no particular limitation. In one embodiment, the current control structure 105 includes a conductive material (metal or conductive polymer, etc.). Thereby, when the current I flows through the current control structure 105, through the connection of the current control structure 105, the current in the area closer to the input terminal and with a stronger current intensity can be opposed to the area farther from the input terminal and has a higher current. The current in the area of weak current intensity is increased and shunted, so that a uniform current intensity distribution is formed on the conductive substrate 110. In Fig. 3, the current control structure 105 is formed in the edge area of the conductive substrate 110; in Fig. 4, the current control structure 105 is formed in the central area of the conductive substrate 110. Through the current control structures 105 formed at different positions on the conductive substrate 110, different current intensity gain effects can be obtained.

請參照第5圖。第5圖係繪示本發明之電流控制裝置100之第四種架構示意圖。第5圖中,電流控制裝置100包含一導電基材110及至少一電流控制單元106。電流控制單元106以跳線方式導通連接於導電基材110外部。第5圖中,電流I自導電基材110之一端輸入導電基材110,並擴散分佈於導電基材110上。電流控制單元106之一端連接導通導電基材110之一端,電流控制單元106之另一端連接導通導電基材110之另一端。藉此,透過電流控制單元106,可將靠近輸入端且電流強度較強之電流I,於導電基材110外被分流,令導電基材110之另一端亦可獲得電流強度相當之電流輸入,令導電基材110上形成均勻之電流強度分佈。電流控制單元106可為一導電線或一可變電阻。當使用可變電阻時,可以調整電流分流之比例,以適應各種不同狀況。 Please refer to Figure 5. FIG. 5 is a schematic diagram showing the fourth structure of the current control device 100 of the present invention. In FIG. 5, the current control device 100 includes a conductive substrate 110 and at least one current control unit 106. The current control unit 106 is conductively connected to the outside of the conductive substrate 110 in a jumper manner. In FIG. 5, the current I is input into the conductive substrate 110 from one end of the conductive substrate 110, and is diffused and distributed on the conductive substrate 110. One end of the current control unit 106 is connected to one end of the conductive substrate 110, and the other end of the current control unit 106 is connected to the other end of the conductive substrate 110. Thereby, through the current control unit 106, the current I, which is close to the input terminal and has a strong current intensity, can be shunted outside the conductive substrate 110, so that the other end of the conductive substrate 110 can also receive a current input of equivalent current intensity. A uniform current intensity distribution is formed on the conductive substrate 110. The current control unit 106 can be a conductive wire or a variable resistor. When a variable resistor is used, the ratio of current shunt can be adjusted to adapt to various conditions.

請參照第6圖。第6圖係繪示本發明之電流控制裝置100之第五種架構示意圖。第6圖中之電流控制裝置100為前述實施例之綜合運用。除使用電流控制結構101、102、103於導電基材110上進行電流I之截斷或分流、使用電流控制結構105於導電基材110上進行電流I之增益及分流,亦使用電流控制單元106自導電基材110外進行電流I之分流。藉此,整體導電基材110可獲得更均勻之電流強度分佈。當將上述電流控制裝置100應用於大面積之液晶(LCD)或有機發光二極體(OLED)顯示裝置時,得以簡易之方式獲致均勻之色彩及亮度分佈,令視覺觀感更加舒適。 Please refer to Figure 6. FIG. 6 is a schematic diagram showing the fifth structure of the current control device 100 of the present invention. The current control device 100 in Figure 6 is a comprehensive application of the foregoing embodiments. In addition to using the current control structure 101, 102, 103 to cut or shunt the current I on the conductive substrate 110, and the current control structure 105 to perform the gain and shunt of the current I on the conductive substrate 110, the current control unit 106 is also used to automatically The current I is shunted outside the conductive substrate 110. In this way, the overall conductive substrate 110 can obtain a more uniform current intensity distribution. When the above-mentioned current control device 100 is applied to a large-area liquid crystal (LCD) or organic light emitting diode (OLED) display device, a uniform color and brightness distribution can be obtained in a simple manner, which makes the visual perception more comfortable.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明的精神和範圍內,當可作各種的更動與潤飾,因此本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone who is familiar with the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be subject to the scope of the attached patent application.

100‧‧‧電流控制裝置 100‧‧‧Current control device

101‧‧‧電流控制結構 101‧‧‧Current control structure

102‧‧‧電流控制結構 102‧‧‧Current control structure

103‧‧‧電流控制結構 103‧‧‧Current control structure

104‧‧‧狹縫 104‧‧‧Slit

110‧‧‧導電基材 110‧‧‧Conductive substrate

I‧‧‧電流 I‧‧‧Current

d1‧‧‧垂直距離 d1‧‧‧Vertical distance

d2‧‧‧垂直距離 d2‧‧‧Vertical distance

Claims (12)

一種電流控制裝置,其包含:一導電基材;以及至少一電流控制結構,形成於該導電基材上;其中當自該導電基材輸入一電流時,透過該至少一電流控制結構令該電流被截斷或分流,令該導電基材上形成均勻之一電流強度分佈;其中該電流控制結構為一溝槽。 A current control device, comprising: a conductive substrate; and at least one current control structure formed on the conductive substrate; wherein when a current is input from the conductive substrate, the current is made through the at least one current control structure Being cut off or shunted, a uniform current intensity distribution is formed on the conductive substrate; wherein the current control structure is a trench. 如申請專利範圍第1項所述的電流控制裝置,其中該導電基材之材質為一銦錫氧化物、氟摻雜氧化錫導電玻璃、銻摻雜氧化錫、鋁摻雜氧化鋅、鎵摻雜氧化鋅或銦摻雜氧化鋅。 As for the current control device described in item 1 of the scope of patent application, the material of the conductive substrate is an indium tin oxide, fluorine-doped tin oxide conductive glass, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped Hetero zinc oxide or indium doped zinc oxide. 如申請專利範圍第1項所述的電流控制裝置,其中該溝槽係透過一物理性破壞方式或一化學性破壞方式形成。 According to the current control device described in item 1 of the scope of patent application, the groove is formed by a physical destruction method or a chemical destruction method. 如申請專利範圍第1項所述的電流控制裝置,其中該電流控制結構之數量為二或以上,各該電流控制結構彼此平行或垂直間隔排列。 For the current control device described in item 1 of the scope of patent application, the number of the current control structures is two or more, and the current control structures are arranged in parallel or at a vertical interval with each other. 如申請專利範圍第4項所述的電流控制裝置,其中各該電流控制結構間之一垂直距離相同或相異。 According to the current control device described in item 4 of the scope of patent application, one of the vertical distances between the current control structures is the same or different. 一種電流控制裝置,其包含:一導電基材;以及至少一電流控制結構,形成於該導電基材上;其中當自該導電基材輸入一電流時,透過該至少一電流控制結構令該電流被增益或分流,令該導電基材上形成均勻之一電流強度分佈;其中該電流控制結構包含一可導電材質。 A current control device, comprising: a conductive substrate; and at least one current control structure formed on the conductive substrate; wherein when a current is input from the conductive substrate, the current is made through the at least one current control structure By gaining or shunting, a uniform current intensity distribution is formed on the conductive substrate; wherein the current control structure includes a conductive material. 如申請專利範圍第6項所述的電流控制裝置,其中該導電基材之材質為一銦錫氧化物。 According to the current control device described in item 6 of the scope of patent application, the material of the conductive substrate is an indium tin oxide. 如申請專利範圍第6項所述的電流控制裝置,其中該電流控制結構係透過點膠、網印、蒸鍍、濺鍍、塗佈、噴霧、物理沉積或化學沉積形成於該導電基材上。 The current control device according to item 6 of the scope of patent application, wherein the current control structure is formed on the conductive substrate by dispensing, screen printing, evaporation, sputtering, coating, spraying, physical deposition or chemical deposition . 如申請專利範圍第6項所述的電流控制裝置,其中該電流控制結構之數量為二或以上,各該電流控制結構形成於該導電基材上之一中央區域或一邊緣區域。 According to the current control device described in item 6 of the scope of patent application, the number of the current control structures is two or more, and each current control structure is formed on a central area or an edge area of the conductive substrate. 一種電流控制裝置,其包含:一導電基材;以及至少一電流控制單元,導通連接於該導電基材外部且不接觸該導電基材本體;其中當自該導電基材輸入一電流時,透過該至少一電流控制單元令該電流於該導電基材外被分流,令該導電基材上形成均勻之一電流強度分佈。 A current control device comprising: a conductive substrate; and at least one current control unit, which is conductively connected to the outside of the conductive substrate and does not contact the conductive substrate body; wherein when a current is input from the conductive substrate, it passes through The at least one current control unit allows the current to be shunted outside the conductive substrate, so that a uniform current intensity distribution is formed on the conductive substrate. 如申請專利範圍第10項所述的電流控制裝置,其中該電流控制單元為一導電線或一可變電阻。 According to the current control device described in item 10 of the scope of patent application, the current control unit is a conductive wire or a variable resistor. 如申請專利範圍第10項所述的電流控制裝置,其中該電流控制單元之一端連接導通該導電基材之一端,該電流控制單元之另一端連接導通該導電基材之另一端。 According to the current control device described in claim 10, one end of the current control unit is connected to one end of the conductive substrate, and the other end of the current control unit is connected to the other end of the conductive substrate.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386104B (en) * 2006-07-14 2013-02-11 Wolfson Microelectronics Plc Protection circuit and method
CN105120599A (en) * 2015-09-08 2015-12-02 广州兴森快捷电路科技有限公司 Impedance control method of isolated lines of circuit board
CN105210219A (en) * 2013-02-26 2015-12-30 威拓股份有限公司 Current density distributor for use in an electrode
TWM541121U (en) * 2017-02-06 2017-05-01 Sunyeer Technology Co Ltd LED light emitting packaging module with power supply
CN107394769A (en) * 2017-09-04 2017-11-24 北京星网卫通科技开发有限公司 Power supply protector and communication in moving satellite communication antenna equipment
TWI683494B (en) * 2015-02-17 2020-01-21 美商力特福斯股份有限公司 Overcurrent protection device and protection circuit integrated into silicon substrate, and limiting current method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386104B (en) * 2006-07-14 2013-02-11 Wolfson Microelectronics Plc Protection circuit and method
CN105210219A (en) * 2013-02-26 2015-12-30 威拓股份有限公司 Current density distributor for use in an electrode
TWI683494B (en) * 2015-02-17 2020-01-21 美商力特福斯股份有限公司 Overcurrent protection device and protection circuit integrated into silicon substrate, and limiting current method
CN105120599A (en) * 2015-09-08 2015-12-02 广州兴森快捷电路科技有限公司 Impedance control method of isolated lines of circuit board
TWM541121U (en) * 2017-02-06 2017-05-01 Sunyeer Technology Co Ltd LED light emitting packaging module with power supply
CN107394769A (en) * 2017-09-04 2017-11-24 北京星网卫通科技开发有限公司 Power supply protector and communication in moving satellite communication antenna equipment

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