TWI723279B - Conveying device and substrate processing device - Google Patents

Conveying device and substrate processing device Download PDF

Info

Publication number
TWI723279B
TWI723279B TW107129858A TW107129858A TWI723279B TW I723279 B TWI723279 B TW I723279B TW 107129858 A TW107129858 A TW 107129858A TW 107129858 A TW107129858 A TW 107129858A TW I723279 B TWI723279 B TW I723279B
Authority
TW
Taiwan
Prior art keywords
transfer machine
temperature sensor
wafer
temperature
conveying device
Prior art date
Application number
TW107129858A
Other languages
Chinese (zh)
Other versions
TW201921569A (en
Inventor
鄭傲
長谷川孝祐
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201921569A publication Critical patent/TW201921569A/en
Application granted granted Critical
Publication of TWI723279B publication Critical patent/TWI723279B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Robotics (AREA)
  • Automation & Control Theory (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

提供一種可提升搬送精度之搬送系統。 一實施形態之搬送裝置係具有：移載機，係會在測量被搬送物之溫度的測量位置與從該測量位置被隔離之待機位置之間進行移動；溫度感應器，係以使前端會從該移載機來突出之方式被安裝於該移載機，而在該測量位置中測量該被搬送物之溫度；以及引導部，係在從該待機位置朝該測量位置之移動方向側具有開口，而保護該溫度感應器之該前端。Provide a conveying system that can improve conveying accuracy. The conveying device of one embodiment has: a transfer machine, which moves between a measuring position for measuring the temperature of the conveyed object and a standby position isolated from the measuring position; a temperature sensor, so that the front end moves from The transfer machine is installed in the transfer machine in a protruding manner, and the temperature of the conveyed object is measured in the measurement position; and the guide part has an opening on the side of the moving direction from the standby position to the measurement position , And protect the front end of the temperature sensor.

Description

搬送裝置及基板處理裝置Conveying device and substrate processing device

本發明係關於一種搬送裝置及基板處理裝置The invention relates to a conveying device and a substrate processing device

自以往，便已知一種縱型熱處理裝置，係具有縱長之熱處理爐，且會在將複數片晶圓載置於晶舟之狀態下受納於熱處理爐，而進行加熱晶圓之熱處理(例如，參照專利文獻1)。From the past, a vertical heat treatment device has been known, which has a long heat treatment furnace, and is placed in the heat treatment furnace with a plurality of wafers placed in a wafer boat to perform heat treatment for heating the wafers (for example, , Refer to Patent Document 1).

縱型熱處理裝置中，係在對晶圓進行熱處理後，將晶舟從熱處理爐搬出，而經過既定冷卻時間後，搬送裝置便會從晶舟來將晶圓朝FOUP(Front-OpeningUnified Pod)內搬送而回收。冷卻時間係將晶圓冷卻至既定溫度(例如80℃)為止所需要的時間與既定等待時間(裕度時間)的總計時間。將晶圓冷卻至既定溫度為止所需要的時間會基於預備實驗的結果等來預先設定。 [先前技術文獻]In the vertical heat treatment device, after the wafer is heat treated, the wafer boat is removed from the heat treatment furnace, and after a predetermined cooling time, the transfer device will move the wafer from the wafer boat into the FOUP (Front-Opening Unified Pod) Transport and recycling. The cooling time is the sum of the time required to cool the wafer to a predetermined temperature (for example, 80° C.) and the predetermined waiting time (margin time). The time required to cool the wafer to a predetermined temperature is preset based on the results of preliminary experiments. [Prior Technical Literature]

[專利文獻] 專利文獻1：日本特開2016-178216號公報[Patent Document] Patent Document 1: JP 2016-178216 A

然而，上述裝置中，由於將既定等待時間包含在晶圓搬送所需要之時間，故會使到回收晶圓為止的時間加長了等待時間的部分。However, in the above-mentioned device, since the predetermined waiting time is included in the time required for wafer transfer, the time until the wafer is collected is increased by the waiting time.

於是，有鑑於上述課題，其目的在於縮短回收時間，並達成生產性之提升。Therefore, in view of the above-mentioned problems, the purpose is to shorten the recovery time and achieve an improvement in productivity.

為了達成上述目的，本發明一態樣之搬送裝置係具有：移載機，係會在測量被搬送物之溫度的測量位置與從該測量位置被隔離之待機位置之間進行移動；溫度感應器，係以使前端會從該移載機來突出之方式被安裝於該移載機，而在該測量位置中測量該被搬送物之溫度；以及引導部，係在從該待機位置朝該測量位置之移動方向側具有開口，而保護該溫度感應器之該前端。In order to achieve the above-mentioned object, the conveying device of one aspect of the present invention has: a transfer machine that moves between a measuring position for measuring the temperature of the conveyed object and a standby position isolated from the measuring position; a temperature sensor , Is installed in the transfer machine in such a way that the front end protrudes from the transfer machine, and the temperature of the transported object is measured in the measurement position; and the guide part is set toward the measurement from the standby position The moving direction side of the position has an opening to protect the front end of the temperature sensor.

根據所揭露之搬送裝置，便可縮短回收時間，並達成生產性之提升。According to the disclosed conveying device, the recycling time can be shortened and the productivity can be improved.

以下，便參照圖式就用以實施本發明之形態來加以說明。另外，本說明書及圖式中係對實質上相同之構成附加相同之符號並省略重複說明。Hereinafter, the mode for implementing the present invention will be described with reference to the drawings. In addition, in this specification and drawings, the same symbols are attached to substantially the same components, and repeated descriptions are omitted.

本發明實施形態相關之晶圓搬送裝置雖可適用於各種基板處理裝置，但為了容易理解，便舉使用縱型熱處理裝置來作為基板處理裝置一範例之情況為範例來加以說明。Although the wafer transfer apparatus related to the embodiment of the present invention can be applied to various substrate processing apparatuses, for easy understanding, a case where a vertical heat treatment apparatus is used as an example of the substrate processing apparatus will be described as an example.

關於具備有本發明一實施形態相關的晶圓搬送裝置之基板處理裝置的構成例，係參照圖1及圖2來加以說明。圖1係具備有本發明一實施形態相關之搬送裝置的基板處理裝置之概略構成圖。圖2係具備有本發明一實施形態相關之搬送裝置的基板處理裝置之概略平面圖。另外，圖2中為了簡化說明，係顯示未在圖1之裝載埠14的一邊及FIMS埠24載置有載具C的狀態。A configuration example of a substrate processing apparatus equipped with a wafer transfer apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. Fig. 1 is a schematic configuration diagram of a substrate processing apparatus equipped with a conveying apparatus according to an embodiment of the present invention. Fig. 2 is a schematic plan view of a substrate processing apparatus equipped with a conveying apparatus according to an embodiment of the present invention. In addition, in order to simplify the description, FIG. 2 shows a state where the carrier C is not placed on one side of the load port 14 and the FIMS port 24 of FIG. 1.

基板處理裝置1係構成為被收納於構成裝置之外裝體的框體2。框體2內係形成有載具搬送區域S2與晶圓搬送區域S2。載具搬送區域S1與晶圓搬送區域S2係藉由分隔壁4來被加以區隔。分隔壁4係設置有會讓載具搬送區域S1與晶圓搬送區域S2連通，並用以搬送晶圓W的搬送口6。搬送口6係藉由依照FIMS(Front-Opening Interface Mechanical Standard)規格的門機構8來加以開閉。門機構8係連接有蓋體開關裝置7之驅動機構，並構成為會藉由驅動機構來使門機構8在前後方向及上下方向自由移動，以開閉搬送口6。The substrate processing apparatus 1 is configured to be housed in a housing 2 that constitutes an exterior body of the apparatus. A carrier transport area S2 and a wafer transport area S2 are formed in the housing 2. The carrier transfer area S1 and the wafer transfer area S2 are partitioned by the partition wall 4. The partition wall 4 is provided with a transfer port 6 that allows the carrier transfer area S1 to communicate with the wafer transfer area S2 and is used to transfer the wafer W. The conveyance port 6 is opened and closed by a door mechanism 8 conforming to the FIMS (Front-Opening Interface Mechanical Standard) standard. The door mechanism 8 is connected to the drive mechanism of the cover switch device 7 and is configured to move the door mechanism 8 freely in the front-rear direction and the vertical direction by the drive mechanism to open and close the conveyance port 6.

以下，便使載具搬送區域S1及晶圓搬送區域S2之配列方向為前後方向(對應於下述第2水平方向)，使垂直於前後方向之水平方向為左右方向(對應於下述第1水平方向)。In the following, the arrangement direction of the carrier transfer area S1 and the wafer transfer area S2 is the front-rear direction (corresponding to the second horizontal direction described below), and the horizontal direction perpendicular to the front-rear direction is the left-right direction (corresponding to the first horizontal direction).

載具搬送區域S1係在大氣氛圍下之區域。載具搬送區域S1係將收納有為被搬送物之半導體晶圓(以下稱為「晶圓W」)之載具C在基板處理裝置1內之下述要素之間搬送，即從外部來搬入至基板處理裝置1內，或是從基板處理裝置1朝外部搬出之區域。載具C可為例如FOUP(Front-Opening Unified Pod)。藉由將FOUP內之清淨度保持在既定程度，便可防止異物朝晶圓W表面之附著或形成自然氧化膜。載具搬送區域S1係由第1搬送區域10與位在第1搬送區域10後方(晶圓搬送區域S2側)的第2搬送區域12所構成。The vehicle transport area S1 is an area under the atmospheric atmosphere. The carrier transport area S1 transports the carrier C containing the semiconductor wafer (hereinafter referred to as "wafer W") as the object to be transported between the following elements in the substrate processing apparatus 1, that is, it is carried in from the outside To the area inside the substrate processing apparatus 1 or carried out from the substrate processing apparatus 1 to the outside. The vehicle C may be, for example, FOUP (Front-Opening Unified Pod). By keeping the cleanliness in the FOUP at a predetermined level, it is possible to prevent foreign matter from adhering to the surface of the wafer W or forming a natural oxide film. The carrier transport area S1 is composed of a first transport area 10 and a second transport area 12 located behind the first transport area 10 (wafer transport area S2 side).

第1搬送區域10作為一範例係設置有在上下有2層(參照圖1)，且於各層左右還有2個(參照圖2)的裝載埠14。裝載埠14係在將載具C搬入至基板處理裝置1時，接收載具C的搬入用載置台。裝載埠14係設置於將框體2之壁部開放之處，而可從外部來進入至基板處理裝置1。具體而言，藉由基板處理裝置1外部所設置之搬送裝置(未圖示)，便可進行載具C朝裝載埠14上的搬入及載置以及載具C從裝載埠14朝外部之搬出。又，由於裝載埠14係例如於上下存在有2層，故可在兩邊進行載具C之搬出及搬出。在裝載埠14下層為了能夠保管載具C，係可具備有儲存部16。裝載部14載置載具C的面係在例如3處設置有將載具C定位之定位銷18。又，可構成為能在將載具C載置於裝載埠14上的狀態下，讓裝載埠14移動於前後方向。As an example, the first transfer area 10 is provided with two loading ports 14 on the top and bottom (refer to FIG. 1), and two (refer to FIG. 2) on the left and right of each layer. The loading port 14 is a loading table for receiving the carrier C when the carrier C is loaded into the substrate processing apparatus 1. The loading port 14 is provided at a place where the wall of the frame 2 is opened, and the substrate processing apparatus 1 can be accessed from the outside. Specifically, by means of a transport device (not shown) provided outside the substrate processing apparatus 1, it is possible to carry in and place the carrier C toward the load port 14 and carry out the carrier C from the load port 14 toward the outside. . In addition, since the loading port 14 has, for example, two levels on the top and bottom, it is possible to carry out and carry out the carrier C on both sides. In order to be able to store the carrier C at the lower level of the load port 14, a storage unit 16 may be provided. The surface of the loading section 14 on which the carrier C is placed is provided with positioning pins 18 for positioning the carrier C at three locations, for example. In addition, it may be configured to be able to move the loading port 14 in the front-rear direction while the carrier C is placed on the loading port 14.

第2搬送區域12下部係在上下方向排列配置有2個(參照圖1)FIMS埠24。FIMS埠24係在相對於晶圓搬送區域S2內之下述熱處理爐80來將載具C內之晶圓W搬入及搬出時，保持載具C之保持台。FIMS埠24係構成為可在前後方向自由移動。在FIMS埠24載置載具C的面亦與裝載埠14同樣地在3處設置有將載具C定位的定位銷18。In the lower part of the second transport area 12, two FIMS ports 24 (refer to FIG. 1) are arranged side by side in the vertical direction. The FIMS port 24 is a holding table for holding the carrier C when carrying the wafer W in the carrier C into and out of the following heat treatment furnace 80 in the wafer transfer area S2. The FIMS port 24 is configured to be freely movable in the front and rear directions. The surface on which the carrier C is placed on the FIMS port 24 is also provided with positioning pins 18 for positioning the carrier C at three places similarly to the loading port 14.

第2搬送區域12上部係設置有保管載具C的儲存部16。儲存部16係由例如3層之架所構成，各架係可在左右方向載置2個以上的載具C。又，為第2搬送區域12下部而未配置有載具載置台之區域亦可構成為配置有儲存部16。A storage unit 16 for storing the carrier C is provided on the upper part of the second transport area 12. The storage unit 16 is composed of, for example, three-layer racks, and each rack can mount two or more carriers C in the left-right direction. In addition, the area where the carrier mounting table is not arranged in the lower part of the second transport area 12 may be configured to have the storage unit 16 arranged.

第1搬送區域10與第2搬送區域12之間係設置有在裝載埠14、儲存部16以及FIMS埠24之間搬送載具C的載具搬送機構30。Between the first transport area 10 and the second transport area 12 is provided a carrier transport mechanism 30 that transports the carrier C between the load port 14, the storage unit 16, and the FIMS port 24.

載具搬送機構30係具備有第1引導部31、第2引導部32、移動部33、臂部35以及手部35。第1引導部31係構成為延伸於上下方向。第2引導部32係構成為連接於第1引導部31，並延伸於左右方向(第1水平方向)。移動部33係構成為一邊被導向第2引導部32，一邊移動於左右方向。臂部34係具有1個關節及2個臂部，且會被設置於移動部33。手部35係設置於臂部34前端。手部35係在3處設置有將載具C定位之銷18。The carrier transport mechanism 30 includes a first guide portion 31, a second guide portion 32, a moving portion 33, an arm portion 35, and a hand portion 35. The first guide portion 31 is configured to extend in the vertical direction. The second guide portion 32 is configured to be connected to the first guide portion 31 and extend in the left-right direction (first horizontal direction). The moving part 33 is configured to move in the left-right direction while being guided to the second guide part 32. The arm part 34 has one joint and two arm parts, and is provided in the moving part 33. The hand 35 is provided at the front end of the arm 34. The hand 35 is provided with three pins 18 for positioning the carrier C.

晶圓搬送區域S2係從載具C來取出晶圓W，而施予各種處理之區域。晶圓搬送區域S2為了防止於晶圓W形成有氧化膜，係成為非活性氣體氛圍，例如氮氣(N2 )氛圍。晶圓搬送區域S2係設置有下端會作為爐口來開口之縱型熱處理爐80。The wafer transfer area S2 is an area where the wafer W is taken out from the carrier C and various processes are applied. In order to prevent the formation of an oxide film on the wafer W, the wafer transfer area S2 is in an inert gas atmosphere, such as a nitrogen (N 2 ) atmosphere. The wafer transfer area S2 is provided with a vertical heat treatment furnace 80 whose lower end is opened as a furnace mouth.

熱處理爐80係具有可收納晶圓W，而用以進行晶圓W之熱處理之石英製的圓筒狀處理容器82。處理容器82周圍係配置有圓筒狀加熱器81，而藉由加熱器81之加熱來進行所收納之晶圓W的熱處理。處理容器82下方係設置有擋板(未圖示)。擋板係在將晶舟50從熱處理爐80搬出，而搬入下一個晶舟50的期間，覆蓋在熱處理爐80下端用的門。熱處理爐80下方係透過保溫筒52來在蓋體54上載置有為基板保持具之晶舟50。換言之，蓋體54係在晶舟50下方與晶舟50一體地被加以設置。The heat treatment furnace 80 has a cylindrical processing container 82 made of quartz capable of storing the wafer W and performing heat treatment of the wafer W. A cylindrical heater 81 is arranged around the processing container 82, and the heat treatment of the contained wafer W is performed by the heating of the heater 81. A baffle (not shown) is provided below the processing container 82. The baffle is a door that covers the lower end of the heat treatment furnace 80 while the wafer boat 50 is carried out from the heat treatment furnace 80 and is carried into the next wafer boat 50. Below the heat treatment furnace 80, a wafer boat 50 serving as a substrate holder is placed on the cover 54 through the heat preservation cylinder 52. In other words, the cover 54 is provided integrally with the wafer boat 50 under the wafer boat 50.

晶舟50係例如石英製，且會構成為於上下方向具有既定間隔，並會略水平地保持大口徑(例如直徑為300mm或450mm)的晶圓W。晶舟50所收納的晶圓W片數並未特別限制，可為例如50~200片。蓋體54係被升降機構(未圖示)所支撐，會藉由升降機構來使晶舟50相對於熱處理爐80而搬入或搬出。晶舟50與搬送口6之間係設置有晶圓搬送裝置60。The wafer boat 50 is made of, for example, quartz, and is configured to have a predetermined interval in the up-down direction and hold a large-diameter (for example, 300 mm or 450 mm in diameter) wafer W slightly horizontally. The number of wafers W contained in the wafer boat 50 is not particularly limited, and may be, for example, 50 to 200. The cover 54 is supported by a lifting mechanism (not shown), and the wafer boat 50 is moved in or out of the heat treatment furnace 80 by the lifting mechanism. A wafer transfer device 60 is provided between the wafer boat 50 and the transfer port 6.

晶圓搬送裝置60係在FIMS埠24上所保持的載具C與晶舟50之間進行晶圓W的移載。晶圓搬送裝置60係具有引導機構61、移動體62、叉部63、升降機構64以及旋轉機構65。引導機構61係長方體狀。引導機構61係被安裝在延伸於垂直方向的升降機構64，且會構成為可藉由升降機構64朝垂直方向移動，並可藉由旋轉機構65來旋轉。移動體62係設置為可在引導機構61上沿著長邊方向來進退移動。叉部63係透過移動體62來安裝的移載機，且可設置有複數片(例如5片)。藉由具有複數片叉部63，便可同時移載複數片晶圓W，而可縮短晶圓W搬送所需要的時間。其中，叉部63亦可為一片。The wafer transfer device 60 transfers the wafer W between the carrier C held on the FIMS port 24 and the wafer boat 50. The wafer transfer device 60 includes a guide mechanism 61, a movable body 62, a fork portion 63, an elevating mechanism 64, and a rotating mechanism 65. The guide mechanism 61 has a rectangular parallelepiped shape. The guide mechanism 61 is installed on the lifting mechanism 64 extending in the vertical direction, and is configured to be movable in the vertical direction by the lifting mechanism 64 and to be rotated by the rotating mechanism 65. The movable body 62 is provided to be movable forward and backward along the longitudinal direction on the guide mechanism 61. The fork 63 is a transfer machine installed through the movable body 62, and may be provided with a plurality of pieces (for example, 5 pieces). By having a plurality of forks 63, a plurality of wafers W can be transferred at the same time, and the time required for the transfer of the wafer W can be shortened. Among them, the fork portion 63 may also be one piece.

5片叉部63的至少任一者係設置有位置檢測感應器66及溫度感應器67。位置檢測感應器66及溫度感應器67會在之後詳述。At least any one of the five fork portions 63 is provided with a position detection sensor 66 and a temperature sensor 67. The position detection sensor 66 and the temperature sensor 67 will be described in detail later.

晶圓搬送區域S2之頂部或側壁部係可設置有過濾器單元(未圖示)。過濾器單元係可舉例有HEPA過濾器(High Efficiency Particulate Air Filter)、ULPA(Ultra-Low Penetration Air Filter)等。藉由設置過濾器單元，便可將清淨空氣供給至晶圓搬送區域S2。A filter unit (not shown) may be provided on the top or side wall of the wafer transfer area S2. The filter unit may be a HEPA filter (High Efficiency Particulate Air Filter), ULPA (Ultra-Low Penetration Air Filter), etc. By installing the filter unit, clean air can be supplied to the wafer transfer area S2.

如圖1及圖2所示，設置有會進行基板處理裝置1整體之控制的控制部100。控制部100係依照配方，並以在配方所示之各種處理條件下來進行熱處理之方式以控制基板處理裝置1內之各種機器的動作。又，控制部100係藉由接收來自基板處理裝置1內所設置之各種感應器的訊號，來掌握晶圓W的位置等，而進行推進程序的機制控制。進一步地，控制部100係可藉由接收基板處理裝置1內所設置之各種檢測器所檢測出的物理性測量值等，來掌握基板處理狀態，以進行為了適當進行基板處理所必要的反饋控制等。As shown in FIGS. 1 and 2, a control unit 100 that controls the entire substrate processing apparatus 1 is provided. The control unit 100 controls the actions of various machines in the substrate processing apparatus 1 in accordance with the recipe and performing heat treatment under various processing conditions indicated in the recipe. In addition, the control unit 100 receives signals from various sensors provided in the substrate processing apparatus 1 to grasp the position of the wafer W, etc., to control the mechanism of the advancement process. Furthermore, the control unit 100 can grasp the state of the substrate processing by receiving physical measurement values detected by various detectors provided in the substrate processing apparatus 1 and perform feedback control necessary for proper substrate processing. Wait.

控制部100係具備有CPU(Central Processing Unit)、ROM(Read Only Memory)、RAM(Random Access Memory)等的演算機構及記憶機構。控制部100係可構成為會從記憶有程式之記憶媒體來安裝進行配方處理的程式，而實行配方處理般之微電腦。又，控制部100亦可構成為ASIC(Application Specific Integrated Circuit)般之電子電路。The control unit 100 is provided with a calculation mechanism and a memory mechanism such as a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and the like. The control unit 100 may be configured to install a program for formula processing from a memory medium in which the program is stored, and execute a microcomputer like formula processing. In addition, the control unit 100 may be configured as an electronic circuit like an ASIC (Application Specific Integrated Circuit).

接著，便參照圖3至圖9，就叉部63所設置之位置檢測感應器66及溫度感應器67來加以說明。圖3係顯示叉部63的一範例之概略平面圖。圖4係顯示在測量晶圓溫度時之叉部63與晶圓W的位置關係之概略平面圖。圖4中係以虛線來顯示待機位置P1中的叉部63，以實線來顯示測量位置P2中的叉部63。圖5至圖7係顯示溫度感應器67及引導部68一範例的圖式。圖5(a)係圖3中之A部的放大圖，圖5(b)係圖5(a)中之一點鏈線B-B所裁切的剖面圖，圖5(c)係圖5(a)中之一點鏈線C-C所裁切的剖面圖。Next, referring to FIGS. 3 to 9, the position detection sensor 66 and the temperature sensor 67 provided on the fork portion 63 will be described. FIG. 3 is a schematic plan view showing an example of the fork portion 63. As shown in FIG. FIG. 4 is a schematic plan view showing the positional relationship between the fork portion 63 and the wafer W when the wafer temperature is measured. In FIG. 4, the fork portion 63 in the standby position P1 is shown by a broken line, and the fork portion 63 in the measurement position P2 is shown by a solid line. 5 to 7 are diagrams showing an example of the temperature sensor 67 and the guide portion 68. Fig. 5(a) is an enlarged view of part A in Fig. 3, Fig. 5(b) is a cross-sectional view cut by the one-point chain line BB in Fig. 5(a), and Fig. 5(c) is Fig. 5(a) ) A cross-sectional view cut by the chain line CC at one of the points.

叉部63係藉由雙股狀之平板構件所形成。叉部63係構成為可在待機位置P1與測量位置P2之間移動。待機位置P1係從測量位置P2所被隔離的位置，例如圖4所示，可為俯視觀察下，差部63與晶圓W不會重疊的位置。測量位置P2係測量晶圓W溫度之位置，例如圖4所示，較佳地係溫度感應器67在叉部63之插入方向中的晶圓W略中央之位置。藉此，便可測量溫度較高之部分的晶圓W溫度。叉部63之材料係可使用例如氧化鋁(Al2 O3 )、碳化矽(SiC)等的陶瓷。叉部63係設置有位置檢測感應器66、溫度感應器67、引導部68以及晶圓支撐部69。The fork 63 is formed by a double-strand-shaped flat member. The fork 63 is configured to be movable between the standby position P1 and the measurement position P2. The standby position P1 is a position isolated from the measurement position P2. For example, as shown in FIG. 4, it may be a position where the difference portion 63 and the wafer W do not overlap in a plan view. The measurement position P2 is a position for measuring the temperature of the wafer W. For example, as shown in FIG. 4, it is preferably a position of the temperature sensor 67 in the center of the wafer W in the insertion direction of the fork 63. In this way, the temperature of the wafer W at the higher temperature portion can be measured. For the material of the fork portion 63 , ceramics such as alumina (Al 2 O 3 ), silicon carbide (SiC), etc. can be used. The fork portion 63 is provided with a position detection sensor 66, a temperature sensor 67, a guide portion 68, and a wafer support portion 69.

位置檢測感應器66係被設置於叉部63前端內側的側面。位置檢測感應器66係例如對向型的一對光學檢測器。位置檢測感應器66會在將晶圓W保持於晶周50時，檢測出晶圓W是否有從晶舟50跳出，或是位置有無偏移等，以及晶圓W的位置是否為正常。位置檢測感應器66係由發光元件與感光元件所構成，而會從發光元件來發出光線，以感光元件來接收光線。在發光元件與感光元件之間並未存在有物(檢測對象物)的情況，感光元件便會接收來自發光元件之光線，在存在有物的情況，則來自發光元件之光線會被遮蔽，而使得感光元件無法接收光線。因此，由於在將晶圓W載置於晶舟50的高度下使叉部63靠近晶圓W，於晶圓W跳出的情況下，光會被遮光，而於未跳出的情況下則光不會被遮蔽，故可檢測出晶圓W之跳出。The position detection sensor 66 is provided on the side surface inside the front end of the fork 63. The position detection sensor 66 is, for example, a pair of opposing optical detectors. The position detection sensor 66 will detect whether the wafer W has jumped out of the wafer boat 50 or whether the position is shifted, etc., and whether the position of the wafer W is normal when the wafer W is held on the wafer periphery 50. The position detection sensor 66 is composed of a light-emitting element and a photosensitive element, and emits light from the light-emitting element, and receives the light by the photosensitive element. When there is no object (detection target) between the light-emitting element and the light-receiving element, the light-receiving element will receive the light from the light-emitting element. If there is an object, the light from the light-emitting element will be blocked, and Make the photosensitive element unable to receive light. Therefore, since the fork portion 63 is close to the wafer W when the wafer W is placed at the height of the wafer boat 50, the light will be shielded when the wafer W jumps out, and the light will not be lighted when the wafer W is not jumped out. Will be shielded, so the jump of wafer W can be detected.

溫度感應器67係被設置於叉部63前端之內側。溫度感應器67係以前端67a會從叉部63突出之方式來加以安裝。溫度感應器67係在測量位置P2中以非接觸來測量晶圓W之溫度。例如，藉由將叉部63插入至晶舟50所保持的複數片晶圓W之鄰接的2片晶圓W之間的測量位置P2，便會以非接觸來測量晶圓W溫度。又，例如藉由移動叉部63之位置，來測量晶圓搬送區域S2內之複數地點的溫度。又，例如藉由讓叉部63保持晶圓W，來測量所保持之晶圓W的溫度。溫度感應器67雖可使用各種熱電偶，但從快速的反應性，且能高精度地測量溫度的觀點看來，較佳地係使用極細線熱電偶(例如，前端線徑為25μm)。又，溫度感應器67亦可使用測溫阻抗體。又，叉部63內部係設置有用以將溫度感應器67之輸出供於外部的配線67b。另外，配線67b可被設置於叉部63表面或內面。The temperature sensor 67 is arranged inside the front end of the fork 63. The temperature sensor 67 is installed in such a way that the front end 67a protrudes from the fork 63. The temperature sensor 67 measures the temperature of the wafer W in a non-contact manner in the measurement position P2. For example, by inserting the fork portion 63 into the measurement position P2 between the two adjacent wafers W of the plurality of wafers W held by the wafer boat 50, the temperature of the wafer W is measured in a non-contact manner. In addition, for example, by moving the position of the fork 63, the temperature at a plurality of points in the wafer transfer area S2 is measured. In addition, for example, by allowing the fork portion 63 to hold the wafer W, the temperature of the held wafer W is measured. Although various thermocouples can be used for the temperature sensor 67, it is preferable to use an ultra-fine wire thermocouple (for example, a wire diameter of 25 μm at the tip) from the viewpoint of rapid reactivity and high-precision temperature measurement. In addition, the temperature sensor 67 may also use a temperature measuring resistor. In addition, a wiring 67b is provided inside the fork 63 to supply the output of the temperature sensor 67 to the outside. In addition, the wiring 67b may be provided on the surface or the inner surface of the fork portion 63.

引導部68係被設置於叉部63前端的內面。引導部68係從叉部63突出設置，且會在從待機位置P1朝測量位置P2的移動方向側(叉部63前端側)具有開口68a，並在俯視觀察下被形成為略U字狀。藉此，便可從接觸等所致的破損中來保護溫度感應器67之前端67a。又，在叉部63從待機位置P1朝測量位置P2移動時，如圖8(a)所示，可透過開口68a而使溫度感應器67之前端67a與測量位置P2中之氣體充分地熱接觸。因此，便可縮短溫度感應器67之溫度測量的反應時間。相對於此，如圖8(b)所示，在未有開口68a的情況，由於測量位置P2中之氣體會被引導部68所遮蔽，故無法使溫度感應器67之前端67a與測量位置P2中之氣體充分地熱接觸。另外，圖8係本發明實施形態相關之晶圓搬送裝置60的效果之說明圖。The guide portion 68 is provided on the inner surface of the front end of the fork portion 63. The guide portion 68 protrudes from the fork portion 63, has an opening 68a on the side of the movement direction from the standby position P1 to the measurement position P2 (the front end side of the fork portion 63), and is formed in a U-shape in a plan view. Thereby, the front end 67a of the temperature sensor 67 can be protected from damage caused by contact or the like. Moreover, when the fork portion 63 moves from the standby position P1 to the measurement position P2, as shown in FIG. 8(a), the front end 67a of the temperature sensor 67 can be sufficiently thermally contacted with the gas in the measurement position P2 through the opening 68a. Therefore, the reaction time of the temperature measurement of the temperature sensor 67 can be shortened. In contrast, as shown in FIG. 8(b), when there is no opening 68a, since the gas in the measurement position P2 will be shielded by the guide portion 68, the front end 67a of the temperature sensor 67 cannot be connected to the measurement position P2. The gas inside is in full thermal contact. In addition, FIG. 8 is an explanatory diagram of the effect of the wafer transfer device 60 according to the embodiment of the present invention.

如圖5所示，引導部68之略U字狀的兩側部68b之長度68L係形成為會較從叉部63所突出之溫度感應器67的前端67a的長度67L要長。藉此，便可從接觸等所致的破損中特別地保護溫度感應器67之前端67a。又，如圖6所示，引導部68之略U字狀的兩側部68b之長度68L亦可形成為等同於從叉部63所突出之溫度感應器67的前端67a的長度67L。進一步地，如圖7所示，引導部68可在俯視觀察下形成為略ㄈ字狀。在此情況下，引導部68之略ㄈ字狀的兩側部68b之長度68L便會形成為從叉部63所突出之溫度感應器67的前端67a的長度67L以上。As shown in FIG. 5, the length 68L of both sides 68b of the roughly U-shaped guide portion 68 is formed to be longer than the length 67L of the front end 67a of the temperature sensor 67 protruding from the fork portion 63. Thereby, the front end 67a of the temperature sensor 67 can be specially protected from damage caused by contact or the like. Furthermore, as shown in FIG. 6, the length 68L of the two sides 68b of the roughly U-shaped guide portion 68 may be formed to be equivalent to the length 67L of the front end 67a of the temperature sensor 67 protruding from the fork portion 63. Further, as shown in FIG. 7, the guide portion 68 may be formed in a slightly U-shape in a plan view. In this case, the length 68L of the two side portions 68b of the guide portion 68 that are slightly U-shaped is formed to be greater than the length 67L of the front end 67a of the temperature sensor 67 protruding from the fork portion 63.

引導部68之材料係可使用例如聚碳酸酯樹脂(PC：Poly Carbonate)、聚對苯二甲酸樹脂(PET：Poly Ethylene Terephthalate)、聚醚醚酮樹脂(PEEK：Poly Ether Ether Ketone)等的各種塑膠。其中，從耐熱性優異的觀點看來，較佳地係使用PEEK。The material of the guide portion 68 can be various types such as polycarbonate resin (PC: Poly Carbonate), polyethylene terephthalate resin (PET: Poly Ethylene Terephthalate), polyether ether ketone resin (PEEK: Poly Ether Ether Ketone), etc. plastic. Among them, from the viewpoint of excellent heat resistance, PEEK is preferably used.

晶圓支撐部69係在叉部63一邊的面上設置有4個。藉由將晶圓W外緣部載置於4個晶圓支撐部69，便可相對於叉部63而在定位好的狀態下來載置晶圓W。Four wafer support parts 69 are provided on the side surface of the fork part 63. By placing the outer edge portion of the wafer W on the four wafer supporting portions 69, the wafer W can be placed in a state of being positioned relative to the fork portion 63.

另外，上述範例中，雖已就將溫度感應器67設置於叉部63前端的情況來加以說明，但設置溫度感應器67之位置並不限於此。例如，如圖9所示，溫度感應器67亦可設置於叉部63之前後方向中的略中央。另外，圖9係顯示叉部63之其他範例的概略平面圖。In addition, in the above example, although the case where the temperature sensor 67 is installed at the front end of the fork portion 63 has been described, the position where the temperature sensor 67 is installed is not limited to this. For example, as shown in FIG. 9, the temperature sensor 67 may also be arranged at a substantially center in the front and rear direction of the fork portion 63. In addition, FIG. 9 is a schematic plan view showing another example of the fork portion 63.

接著，便就使用本發明實施形態相關之晶圓搬送裝置60時的溫度感應器67的反應性之評價結果來加以說明。具體而言，係在讓叉部63從待機位置P1朝測量位置P2移動，而在測量位置P2中使溫度感應器67所測量之溫度超過80℃後，再藉由溫度感應器67來測量使叉部63從測量位置P2退離至待機位置P1時之溫度。又，為了進行比較，便就使用具有未形成有開口的引導部的晶圓搬送裝置時之溫度感應器的反應性，以及使用不具有引導部之晶圓搬送裝置時之溫度感應器的反應性來加以評價。其中，比較例中係即便在測量位置P2中藉由溫度感應器67所測量之溫度超過80℃的情況下，仍不讓叉部63從測量位置P2退離至待機位置P1來進行評價。Next, the evaluation result of the reactivity of the temperature sensor 67 when the wafer transfer apparatus 60 according to the embodiment of the present invention is used will be described. Specifically, the fork 63 is moved from the standby position P1 to the measurement position P2, and the temperature measured by the temperature sensor 67 exceeds 80°C in the measurement position P2, and then the temperature sensor 67 is used to measure the The temperature when the fork 63 retreats from the measurement position P2 to the standby position P1. In addition, for comparison, the reactivity of the temperature sensor when using a wafer transfer device with a guide portion without openings, and the reactivity of the temperature sensor when using a wafer transfer device without a guide portion To be evaluated. Among them, in the comparative example, even when the temperature measured by the temperature sensor 67 in the measurement position P2 exceeds 80° C., the fork portion 63 is not allowed to retreat from the measurement position P2 to the standby position P1 for evaluation.

圖10係顯示溫度感應器之反應性的圖式。圖10中，橫軸係表示時間(min)，縱軸係表示溫度(℃)。又，圖10中，實線係表示使用本發明實施形態相關之晶圓搬送裝置60時的溫度感應器67之反應性。又，虛線係表示使用具有未形成有開口之引導部的晶圓搬送裝置時之溫度感應器的反應性。Figure 10 is a diagram showing the reactivity of the temperature sensor. In Fig. 10, the horizontal axis represents time (min), and the vertical axis represents temperature (°C). In addition, in FIG. 10, the solid line indicates the reactivity of the temperature sensor 67 when the wafer transfer apparatus 60 according to the embodiment of the present invention is used. In addition, the dashed line indicates the reactivity of the temperature sensor when using a wafer transfer device having a guide portion with no opening formed thereon.

如圖10所示，在使用本發明實施形態相關之晶圓搬送裝置60的情況，達到峰值溫度為止的時間係與使用不具有引導部68之晶圓搬送裝置之情況下相同而為1秒。亦即，得知具有高反應性。相對於此，在使用具有未形成有開口之引導部的晶圓搬送裝置之情況，達到峰值溫度為止的時間為60秒。As shown in FIG. 10, in the case of using the wafer transfer apparatus 60 according to the embodiment of the present invention, the time to reach the peak temperature is the same as that in the case of using the wafer transfer apparatus without the guide portion 68, which is 1 second. That is, it is known that it has high reactivity. On the other hand, in the case of using a wafer transfer apparatus having a guide portion with no opening formed thereon, the time until the peak temperature is reached is 60 seconds.

如上述說明，本發明實施形態中，由於可在短時間測量晶圓W溫度，故能即時地測量晶圓W溫度，而在所測量之溫度為閾值以下的時機點，便可迅速地將晶圓W從晶舟50移載至載具C。其結果，便可縮短晶圓W回收所需要的時間，而可達成生產性之提升。As explained above, in the embodiment of the present invention, since the temperature of the wafer W can be measured in a short time, the temperature of the wafer W can be measured immediately, and at the timing when the measured temperature is below the threshold, the wafer W can be quickly removed. The circle W is transferred from the wafer boat 50 to the carrier C. As a result, the time required for the recovery of the wafer W can be shortened, and productivity can be improved.

以上，雖已就用以實施本發明之形態來加以說明，但上述內容並不會限制發明內容，而可在本發明範圍內進行各種變形及改良。Although the form for implementing the present invention has been described above, the above content does not limit the content of the invention, and various modifications and improvements can be made within the scope of the present invention.

上述實施形態中，雖以將1個溫度感應器67設置於叉部63的情況為範例來加以說明，但不限於此，亦可將複數溫度感應器67設置於叉部63。在將複數溫度感應器67設置於叉部63的情況，便可測量晶圓W之面內分布。In the above embodiment, a case where one temperature sensor 67 is provided on the fork portion 63 is described as an example, but it is not limited to this, and a plurality of temperature sensors 67 may be provided on the fork portion 63. When a plurality of temperature sensors 67 are provided on the fork portion 63, the in-plane distribution of the wafer W can be measured.

1‧‧‧基板處理裝置50‧‧‧晶舟60‧‧‧晶圓搬送裝置63‧‧‧叉部66‧‧‧位置檢測感應器67‧‧‧溫度感應器67a‧‧‧前端67b‧‧‧配線68‧‧‧引導部68a‧‧‧開口80‧‧‧熱處理爐100‧‧‧控制部P1‧‧‧待機位置P2‧‧‧測量位置W‧‧‧晶圓1‧‧‧Substrate processing equipment 50‧‧‧ Wafer boat 60‧‧‧Wafer transport equipment 63‧‧‧Fork 66‧‧‧Position detection sensor 67‧‧‧Temperature sensor 67a‧‧‧Front end 67b‧‧ ‧Wiring 68‧‧‧Guiding part 68a‧‧‧Opening 80‧‧‧Heat treatment furnace 100‧‧‧Control part P1‧‧‧Standby position P2‧‧‧Measurement position W‧‧‧Wafer

[圖1]係具備有本發明一實施形態相關之搬送裝置的基板處理裝置之概略構成圖。 [圖2]係具備有本發明一實施形態相關之搬送裝置的基板處理裝置之概略平面圖。 [圖3]係顯示叉部之一範例的概略平面圖。 [圖4]係顯示在測量晶圓溫度時之叉部與晶圓的位置關係之概略平面圖。 [圖5]係顯示溫度感應器與引導部一範例之圖式(1)。 [圖6]係顯示溫度感應器與引導部一範例之圖式(2)。 [圖7]係顯示溫度感應器與引導部一範例之圖式(3)。 [圖8]係本發明一實施形態相關之晶圓搬送裝置的效果之說明圖。 [圖9]係顯示叉部其他範例之概略平面圖。 [圖10]係顯示溫度感應器之反應性的圖式。Fig. 1 is a schematic configuration diagram of a substrate processing apparatus equipped with a conveying apparatus according to an embodiment of the present invention. [Fig. 2] A schematic plan view of a substrate processing apparatus equipped with a conveying device according to an embodiment of the present invention. [Figure 3] A schematic plan view showing an example of the fork. [Figure 4] A schematic plan view showing the positional relationship between the fork and the wafer when measuring the wafer temperature. [Figure 5] Diagram (1) showing an example of the temperature sensor and the guiding part. [Fig. 6] A diagram (2) showing an example of the temperature sensor and the guiding part. [Fig. 7] A diagram (3) showing an example of the temperature sensor and the guiding part. [Fig. 8] is an explanatory diagram of the effect of the wafer transfer apparatus according to an embodiment of the present invention. [Figure 9] is a schematic plan view showing other examples of the fork. [Figure 10] A diagram showing the reactivity of the temperature sensor.

63‧‧‧叉部 63‧‧‧Fork

66‧‧‧位置檢測感應器 66‧‧‧Position detection sensor

67‧‧‧溫度感應器 67‧‧‧Temperature sensor

67a‧‧‧前端 67a‧‧‧Front end

67b‧‧‧配線 67b‧‧‧Wiring

68‧‧‧引導部 68‧‧‧Guide Department

68a‧‧‧開口 68a‧‧‧Opening

69‧‧‧晶圓支撐部 69‧‧‧Wafer Support

Claims (10)

一種搬送裝置係具有：移載機，係會在測量被搬送物之溫度的測量位置與從該測量位置被隔離之待機位置之間進行移動；溫度感應器，係以使前端會朝向該移載機的前端側從該移載機來突出之方式被安裝於該移載機，而在該測量位置中測量該被搬送物之溫度；引導部，係在該移載機的前端側具有開口，而保護該溫度感應器之該前端；以及配線，係設置在該移載機之內部，且用以將該溫度感應器之輸出供於外部；該配線係從該移載機之安裝部被往外部拉出；該測量位置係該溫度感應器在該移載機之插入方向中的該被搬送物略中央之位置。 A conveying device has: a transfer machine, which moves between a measuring position for measuring the temperature of the conveyed object and a standby position isolated from the measuring position; a temperature sensor, so that the front end will face the transfer The front end side of the machine is installed on the transfer machine in such a way that it protrudes from the transfer machine, and the temperature of the transported object is measured in the measuring position; the guide part has an opening on the front end side of the transfer machine, The front end of the temperature sensor is protected; and the wiring is set inside the transfer machine and used to supply the output of the temperature sensor to the outside; the wiring is routed from the installation part of the transfer machine Pull out from the outside; the measurement position is the position of the temperature sensor in the center of the conveyed object in the insertion direction of the transfer machine. 如申請專利範圍第1項之搬送裝置，其中該引導部係從該移載機來突出設置，而在俯視觀察下被形成為略U字狀或略ㄈ字狀。 For example, the conveying device of the first item of the scope of patent application, wherein the guide part is protruding from the transfer machine, and is formed in a U-shape or a U-shape in a plan view. 如申請專利範圍第2項之搬送裝置，其中該引導部係使略U字狀或略ㄈ字狀的開口側位在該移載機之前端側。 For example, the conveying device of the second item of the scope of patent application, wherein the guide part makes the slightly U-shaped or slightly U-shaped opening side positioned at the front end side of the transfer machine. 如申請專利範圍第3項之搬送裝置，其中該引導部之略U字狀或略ㄈ字狀的兩側部之長度係從該移載機所突出之該溫度感應器的該前端之長度以上。 For example, the conveying device of item 3 of the scope of patent application, in which the length of the two sides of the guide part in a U-shaped or slightly U-shaped shape is longer than the length of the front end of the temperature sensor protruding from the transfer machine . 如申請專利範圍第1項之搬送裝置，其中該溫度感應器係以非接觸來測量該被搬送物之溫度。 For example, the conveying device of the first item in the scope of patent application, wherein the temperature sensor measures the temperature of the conveyed object in a non-contact manner. 如申請專利範圍第1項之搬送裝置，其中該溫度感應器係被安裝於該移載機之前端。 For example, the conveying device of item 1 in the scope of patent application, wherein the temperature sensor is installed at the front end of the transfer machine. 如申請專利範圍第1項之搬送裝置，其中該溫度感應器係被安裝於該移載機之插入方向的略中央。 Such as the conveying device of the first item in the scope of patent application, wherein the temperature sensor is installed in the center of the insertion direction of the transfer machine. 如申請專利範圍第1項之搬送裝置，其中該移載機係設置有供該溫度感應器之輸出的配線。 For example, the transfer device of the first item of the scope of patent application, wherein the transfer machine is provided with wiring for the output of the temperature sensor. 如申請專利範圍第1項之搬送裝置，其中該溫度感應器係熱電偶或測溫阻抗體。 For example, the conveying device of item 1 in the scope of patent application, wherein the temperature sensor is a thermocouple or a temperature measuring resistor. 一種基板處理裝置，係具有：熱處理爐；基板保持具，係可在保持有複數基板的狀態下被收納於該熱處理爐；移載機，係會在測量該複數基板之溫度的測量位置與從該測量位置被隔離之待機位置之間進行移動；溫度感應器，係以使前端會朝向該移載機的前端側從該移載機突出之方式來被安裝於該移載機，而在該測量位置中測量該複數基板之溫度；引導部，係在該移載機的前端側具有開口，而保護該溫度感應器之該前端；以及配線，係設置在該移載機之內部，且用以將該溫度感應器之輸出供於外部；該配線係從該移載機之安裝部被往外部拉出；該測量位置係該溫度感應器在該移載機之插入方向中的該基板略中央之位置。 A substrate processing device is provided with: a heat treatment furnace; a substrate holder that can be stored in the heat treatment furnace while holding a plurality of substrates; a transfer machine is used to measure the temperature of the plurality of substrates at the measuring position and slave The measurement position is moved between the isolated standby positions; the temperature sensor is installed in the transfer machine in such a way that the front end protrudes from the transfer machine toward the front end side of the transfer machine, and The temperature of the plurality of substrates is measured in the measuring position; the guide part has an opening on the front end side of the transfer machine to protect the front end of the temperature sensor; and the wiring is set inside the transfer machine and used The output of the temperature sensor is provided to the outside; the wiring is pulled out from the mounting part of the transfer machine; the measurement position is the substrate of the temperature sensor in the insertion direction of the transfer machine. Central location.
TW107129858A 2017-08-30 2018-08-28 Conveying device and substrate processing device TWI723279B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-165154 2017-08-30
JP2017165154A JP6632583B2 (en) 2017-08-30 2017-08-30 Transfer device and substrate processing device

Publications (2)

Publication Number Publication Date
TW201921569A TW201921569A (en) 2019-06-01
TWI723279B true TWI723279B (en) 2021-04-01

Family

ID=65514775

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107129858A TWI723279B (en) 2017-08-30 2018-08-28 Conveying device and substrate processing device

Country Status (4)

Country Link
JP (1) JP6632583B2 (en)
KR (1) KR102349064B1 (en)
CN (1) CN109427639B (en)
TW (1) TWI723279B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7246256B2 (en) 2019-05-29 2023-03-27 東京エレクトロン株式会社 Conveying method and conveying system
JP7399035B2 (en) 2020-06-23 2023-12-15 東京エレクトロン株式会社 Teaching method, transport system and program
JP2022184175A (en) 2021-05-31 2022-12-13 東京エレクトロン株式会社 Information processing device, transfer position teaching method and substrate processing device
JP2022186429A (en) 2021-06-04 2022-12-15 東京エレクトロン株式会社 Information processing device, transfer position correction method and substrate processing device
JP2023027797A (en) 2021-08-18 2023-03-03 東京エレクトロン株式会社 Substrate processing device and imaging method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997787A (en) * 1995-09-30 1997-04-08 Tokyo Electron Ltd Processing device
JP2006080410A (en) * 2004-09-13 2006-03-23 Hitachi Kokusai Electric Inc Manufacturing method of semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217463A (en) * 1978-03-13 1980-08-12 National Distillers And Chemical Corporation Fast responsive, high pressure thermocouple
JPH04286143A (en) * 1991-03-14 1992-10-12 Hitachi Ltd Wafer treatment equipment
JPH05304196A (en) * 1992-04-27 1993-11-16 Mitsubishi Electric Corp Wafer conveyor
JPH07142549A (en) * 1993-11-22 1995-06-02 Hitachi Ltd Semiconductor production device
US9354121B2 (en) * 2011-10-13 2016-05-31 Micromold Products, Inc. Corrosion resistant thermowells with thin wall tips
JP2015031671A (en) * 2013-08-07 2015-02-16 中国電力株式会社 Guide pipe for thermocouple protective tube, and damage suppression method of thermocouple protective tube
JP6339040B2 (en) 2015-03-20 2018-06-06 東京エレクトロン株式会社 Protective cover and substrate processing apparatus using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997787A (en) * 1995-09-30 1997-04-08 Tokyo Electron Ltd Processing device
JP2006080410A (en) * 2004-09-13 2006-03-23 Hitachi Kokusai Electric Inc Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JP6632583B2 (en) 2020-01-22
KR20190024718A (en) 2019-03-08
JP2019046843A (en) 2019-03-22
KR102349064B1 (en) 2022-01-07
TW201921569A (en) 2019-06-01
CN109427639A (en) 2019-03-05
CN109427639B (en) 2023-07-21

Similar Documents

Publication Publication Date Title
TWI723279B (en) Conveying device and substrate processing device
KR101524177B1 (en) Thermal treatment apparatus and thermal treatment method
KR101877425B1 (en) Substrate transfer apparatus, substrate transfer method, and storage medium
JP5715904B2 (en) Heat treatment apparatus and substrate transfer method for transferring substrate to the same
US10978322B2 (en) Transfer device, substrate processing apparatus, and transfer method
TWI579953B (en) Substrate processing device and substrate transport method
CN108573902B (en) Longitudinal heat treatment apparatus and method for operating longitudinal heat treatment apparatus
CN111009485B (en) Substrate warehouse, substrate processing system and substrate inspection method
CN107731708B (en) Determination device
KR102521418B1 (en) Substrate processing apparatus, substrate transfer method and computer-readable recording medium storing substrate transfer program
JP6339040B2 (en) Protective cover and substrate processing apparatus using the same
TWI592495B (en) Magnetic annealing apparatus
TW202112640A (en) Substrate carrier apparatus and substrate carrying method
TW200945483A (en) Methods and apparatus for an integral local substrate center finder for I/O and chamber slit valves
JP6667576B2 (en) Transfer apparatus, substrate processing apparatus and transfer method
JP6533854B2 (en) Article monitoring apparatus, conveyance apparatus, heat treatment apparatus, and article monitoring method
JP2002270671A (en) Substrate processing apparatus
JP6675027B2 (en) Article monitoring apparatus, transport apparatus, heat treatment apparatus, and article monitoring method
JP6446211B2 (en) Article monitoring apparatus, transfer apparatus, heat treatment apparatus, and article monitoring method
JP2012195375A (en) Substrate processing device
TW201719689A (en) Magnetizing apparatus and magnetizing method
JP2011249642A (en) Substrate processing apparatus
KR20070076104A (en) Position testing apparatus of used in wafer transferring apparatus
KR20060002440A (en) Apparatus for fabricating semiconductor device
JP2010205880A (en) Substrate transfer device