TWI720093B - Display device and its manufacturing method and manufacturing device - Google Patents
Display device and its manufacturing method and manufacturing device Download PDFInfo
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- TWI720093B TWI720093B TW105142216A TW105142216A TWI720093B TW I720093 B TWI720093 B TW I720093B TW 105142216 A TW105142216 A TW 105142216A TW 105142216 A TW105142216 A TW 105142216A TW I720093 B TWI720093 B TW I720093B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
Abstract
本發明的課題為提供一種能夠抑制起因於亮點缺陷之顯示品質的降低之顯示裝置與其製造方法以及製造裝置。解決手段是在顯示裝置中,於第1玻璃基板以及第2玻璃基板的至少一者的內部中,具有從顯示面側觀看覆蓋亮點缺陷部之減光部。減光部包含有顏色與第1玻璃基板以及第2玻璃基板均不同之著色層、與含有複數個空隙之空隙層。The subject of the present invention is to provide a display device, its manufacturing method, and its manufacturing device capable of suppressing the degradation of display quality due to bright spot defects. The solution is that in the display device, at least one of the first glass substrate and the second glass substrate has a dimming portion that covers the defect portion of the bright spot when viewed from the display surface side. The light-reducing part includes a colored layer whose color is different from that of the first glass substrate and the second glass substrate, and a void layer containing a plurality of voids.
Description
發明領域 Invention field
本發明是有關於一種顯示裝置與其製造方法及製造裝置。 The present invention relates to a display device and its manufacturing method and manufacturing device.
發明背景 Background of the invention
各種顯示裝置之中,例如液晶顯示裝置是藉由將發生於像素電極與共通電極之間的電場施加在被一對基板夾持的液晶層來驅動液晶,藉此調整穿透畫素電極與共通電極之間的區域的光量,而進行圖像顯示。 Among various display devices, for example, the liquid crystal display device drives the liquid crystal by applying an electric field generated between the pixel electrode and the common electrode to the liquid crystal layer sandwiched by a pair of substrates, thereby adjusting the penetrating pixel electrode and the common electrode. The amount of light in the area between the electrodes is used for image display.
已知以往有在例如液晶顯示裝置中,像素的顯示亮度變得比所希望的亮度更高之所謂的亮點缺陷(亦稱為像素缺陷。)之問題。亮點缺陷是因為下述情形而產生:例如,在液晶顯示裝置的製造工序中,於一對基板間混入異物,並藉由此異物,將液晶的配向攪亂、或使像素電極與共通電極短路。 It is known that, for example, in a liquid crystal display device, there is a problem of so-called bright point defects (also referred to as pixel defects) in which the display brightness of pixels becomes higher than desired brightness. The bright spot defect is caused by, for example, in the manufacturing process of the liquid crystal display device, foreign matter is mixed between a pair of substrates, and the foreign matter disturbs the alignment of the liquid crystal or short-circuits the pixel electrode and the common electrode.
修正前述亮點缺陷的方法已揭示於例如專利文獻1中。在專利文獻1的方法中,是對玻璃基板內部照射雷射光,並使著色層形成為從平面觀看覆蓋產生亮點缺陷的區域,來使光的透射量減少。
The method of correcting the aforementioned bright spot defect has been disclosed in
專利文獻1:日本專利特開2015-175857號公報 Patent Document 1: Japanese Patent Laid-Open No. 2015-175857
發明概要 Summary of the invention
然而,如以往一般地僅用著色層時,有時會有著色變得不充分的情況,而無法充分地修正亮點缺陷的不良。 However, when only the colored layer is generally used as in the past, the coloring may become insufficient, and the defect of the bright spot defect may not be sufficiently corrected.
本發明是有鑒於前述實際狀況而作成的發明,其在於提供一種能夠抑制起因於亮點缺陷之顯示品質的降低之顯示裝置與其製造方法以及製造裝置。 The present invention is an invention made in view of the foregoing actual situation, and it is to provide a display device, a manufacturing method thereof, and a manufacturing device capable of suppressing the degradation of display quality caused by bright spot defects.
為了解決前述課題,本發明的1種態樣之顯示裝置是具備第1玻璃基板、及第2玻璃基板的顯示裝置,該第2玻璃基板與前述第1玻璃基板相向且位於顯示面側,在前述第1玻璃基板以及前述第2玻璃基板的至少一者的內部中,具有從前述顯示面側觀看,覆蓋亮點缺陷部之減光部,前述減光部包含:著色層,顏色與前述第1玻璃基板以及前述第2玻璃基板不同;及空隙層,含有複數個空隙,前述複數個空隙之每一個的直徑在1nm以上且50μm 以下。 In order to solve the aforementioned problems, a display device of one aspect of the present invention is a display device including a first glass substrate and a second glass substrate. The second glass substrate faces the first glass substrate and is located on the display surface side. The inside of at least one of the first glass substrate and the second glass substrate has a dimming portion that covers the defect portion of the bright spot as viewed from the display surface side. The dimming portion includes a colored layer, a color, and the first The glass substrate and the aforementioned second glass substrate are different; and the void layer contains a plurality of voids, and each of the plurality of voids has a diameter of 1 nm or more and 50 μm the following.
依據本發明的前述態樣,能夠抑制起因於亮點缺陷之顯示品質的降低。 According to the aforementioned aspect of the present invention, it is possible to suppress the degradation of the display quality caused by the bright spot defect.
1、1a:減光部 1.1a: Dimming part
2:著色層 2: Coloring layer
3:空隙層 3: void layer
4:超短脈衝雷射光 4: Ultra-short pulse laser light
5:折射率變化層 5: Refractive index change layer
6:亮點缺陷修正裝置 6: Bright spot defect correction device
7:超短脈衝雷射光振盪機構 7: Ultra-short pulse laser light oscillation mechanism
8:高聚光透鏡 8: High condensing lens
30:資料線驅動電路 30: Data line drive circuit
31:閘極線驅動電路 31: Gate line drive circuit
32:開口部 32: Opening
33、1000、1001:異物 33, 1000, 1001: foreign body
34:背光光線 34: Backlight light
90:檢查裝置 90: check device
91:演算部 91: Calculus Department
92:移動裝置 92: mobile device
93:控制裝置 93: control device
95:顯示裝置之製造裝置 95: Manufacturing device of display device
100:紫外線或迦瑪(γ)射線 100: Ultraviolet or gamma (γ) rays
133:亮點缺陷部 133: Bright spot defect department
134:背光照明 134: Backlighting
A1、A2:線 A1, A2: line
AF:配向膜 AF: Alignment film
BM:黑矩陣 BM: black matrix
CF:彩色濾光片 CF: Color filter
CIT:共通電極 CIT: Common electrode
CONT:接觸孔 CONT: contact hole
DL:資料線 DL: Data line
DM:汲極電極 DM: Drain electrode
DP:顯示面板 DP: display panel
F:焦點 F: Focus
GB:玻璃基板 GB: Glass substrate
GB1:第1玻璃基板 GB1: The first glass substrate
GB2:第2玻璃基板 GB2: The second glass substrate
GSN:閘極絕緣膜 GSN: Gate insulating film
GL:閘極線 GL: Gate line
LC:液晶層 LC: liquid crystal layer
LCD:液晶顯示裝置 LCD: Liquid crystal display device
OC:塗覆層 OC: Coating
P:像素 P: pixel
PAS:絕緣膜 PAS: insulating film
PIT:像素電極 PIT: pixel electrode
POL1、POL2:偏光板 POL1, POL2: Polarizing plate
SEM:半導體層 SEM: semiconductor layer
SM:源極電極 SM: Source electrode
SUB1:TFT基板 SUB1: TFT substrate
SUB2:CF基板 SUB2: CF substrate
UPAS:上層絕緣膜 UPAS: upper insulating film
圖1是顯示本發明之第1實施形態的液晶顯示裝置之整體構成之圖。 Fig. 1 is a diagram showing the overall configuration of a liquid crystal display device according to a first embodiment of the present invention.
圖2是顯示圖1之液晶顯示裝置的顯示面板的一部分的構成之平面圖。 FIG. 2 is a plan view showing the structure of a part of a display panel of the liquid crystal display device of FIG. 1. FIG.
圖3是以圖2之A1-A2線切斷而成的切斷部之端視圖。 Fig. 3 is an end view of a cut portion cut along the line A1-A2 in Fig. 2;
圖4是示意地顯示在圖1的液晶顯示裝置中的亮點缺陷之一例的剖面圖。 Fig. 4 is a cross-sectional view schematically showing an example of a bright spot defect in the liquid crystal display device of Fig. 1.
圖5是顯示在第1實施形態的液晶顯示裝置中,具有減光部的像素之構成的剖面圖。 5 is a cross-sectional view showing the structure of a pixel having a dimming portion in the liquid crystal display device of the first embodiment.
圖6是在玻璃基板內部中的非橋接氧空孔中心形成的示意圖。 Fig. 6 is a schematic diagram of the formation of the center of a non-bridging oxygen void in the interior of the glass substrate.
圖7之(a)、(b)是多光子吸收的示意圖。 Figure 7 (a) and (b) are schematic diagrams of multiphoton absorption.
圖8是顯示使超短脈衝雷射光聚光在玻璃基板的內部之時的能量密度中的加工現象之圖。 FIG. 8 is a diagram showing the processing phenomenon in the energy density when the ultrashort pulse laser light is condensed inside the glass substrate.
圖9是顯示在圖1的液晶顯示裝置的減光部之加工原理的示意圖。 FIG. 9 is a schematic diagram showing the processing principle of the dimming part of the liquid crystal display device of FIG. 1.
圖10是加工後的雷射光因空隙而散射之情形的示意圖。 Fig. 10 is a schematic diagram of the situation where the processed laser light is scattered by the gap.
圖11是顯示在第1實施形態的第1變形例之液晶顯示裝置中,具有減光部的像素之其他構成的剖面圖。 11 is a cross-sectional view showing another structure of a pixel having a dimming portion in the liquid crystal display device of the first modification of the first embodiment.
圖12A是顯示在第2實施形態的液晶顯示裝置中,亮點缺陷之修正方法的流程圖。 Fig. 12A is a flowchart showing a method of correcting a bright spot defect in the liquid crystal display device of the second embodiment.
圖12B是能夠實施亮點缺陷的修正方法的顯示裝置之製造裝置的方塊圖。 FIG. 12B is a block diagram of a manufacturing apparatus of a display device capable of implementing a method for correcting a bright spot defect.
圖13是顯示在第2實施形態的變形例之液晶顯示裝置中,亮點缺陷的修正方法之流程圖。 FIG. 13 is a flowchart showing a method of correcting a bright spot defect in a liquid crystal display device according to a modification of the second embodiment.
圖14是顯示第2實施形態之液晶顯示裝置的製造裝置之構成的示意圖。 Fig. 14 is a schematic diagram showing the structure of a manufacturing apparatus of a liquid crystal display device according to a second embodiment.
圖15是顯示其他的變形例之液晶顯示裝置的製造裝置之構成的示意圖。 FIG. 15 is a schematic diagram showing the structure of a manufacturing apparatus of a liquid crystal display device according to another modification.
用以實施發明之形態 The form used to implement the invention
以下,針對本發明的實施形態,一邊參照圖式一邊進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
在以下的實施形態中,雖然舉液晶顯示裝置為例,但本發明之顯示裝置並非是限定為液晶顯示裝置之顯示裝置,也可以是例如有機EL顯示裝置或電漿顯示器面板等。 In the following embodiments, although a liquid crystal display device is taken as an example, the display device of the present invention is not limited to a display device of a liquid crystal display device, and may be, for example, an organic EL display device or a plasma display panel.
(第1實施形態) (First Embodiment)
圖1是顯示本發明之第1實施形態的液晶顯示裝置LCD之整體構成的平面圖。 Fig. 1 is a plan view showing the overall structure of a liquid crystal display device LCD according to the first embodiment of the present invention.
液晶顯示裝置LCD包含有:顯示圖像的顯示面板DP、驅動顯示面板DP的顯示面板用驅動電路(資料線驅動電路30、閘極線驅動電路31)、控制顯示面板用驅動電路的控制電路(圖未示)、與將由背面側照射光的背光光線照射到顯
示面板DP的背光照明134。
The liquid crystal display device LCD includes: a display panel DP that displays images, a drive circuit for the display panel (data
圖2是顯示顯示面板DP的一部分之構成的平面圖。圖3是以圖2之A1-A2線切斷而成的切斷部之端視圖。再者,在圖2以及圖3中所顯示的是1個像素P。 FIG. 2 is a plan view showing the structure of a part of the display panel DP. Fig. 3 is an end view of a cut portion cut along the line A1-A2 in Fig. 2; Furthermore, one pixel P is shown in FIG. 2 and FIG. 3.
顯示面板DP包含有配置在背面側的薄膜電晶體基板SUB1(以下稱為TFT基板SUB1。)(第1基板)、配置在顯示面側且與TFT基板SUB1相向的彩色濾光片基板SUB2(以下稱為CF基板SUB2。)(第2基板)、與被夾持在TFT基板SUB1以及CF基板SUB2之間的液晶層LC。 The display panel DP includes a thin film transistor substrate SUB1 (hereinafter referred to as TFT substrate SUB1.) (first substrate) arranged on the back side, and a color filter substrate SUB2 (hereinafter referred to as TFT substrate SUB1) arranged on the display surface side and facing the TFT substrate SUB1. It is called a CF substrate SUB2.) (second substrate), and a liquid crystal layer LC sandwiched between the TFT substrate SUB1 and the CF substrate SUB2.
於TFT基板SUB1上形成有在列方向上延伸的複數條資料線DL、與在行方向上延伸的複數條閘極線GL,在複數條資料線DL與複數條閘極線GL的各自的交叉部附近形成有薄膜電晶體TFT。又,將由相鄰的2條資料線DL與相鄰的2條閘極線GL所包圍的矩形區域規定為1個像素P。在TFT基板SUB1中,將複數個像素P配置成矩陣狀。 A plurality of data lines DL extending in the column direction and a plurality of gate lines GL extending in the row direction are formed on the TFT substrate SUB1. At the respective intersections of the plurality of data lines DL and the plurality of gate lines GL A thin film transistor TFT is formed nearby. In addition, a rectangular area surrounded by two adjacent data lines DL and two adjacent gate lines GL is defined as one pixel P. In the TFT substrate SUB1, a plurality of pixels P are arranged in a matrix.
於像素P上形成有由氧化銦錫(ITO)等的透明(透光性)導電膜構成之像素電極PIT(顯示用電極)。如圖2所示,像素電極PIT具有開口部32(例如狹縫),並形成為條紋狀。薄膜電晶體TFT在閘極絕緣膜GSN(參照圖3)上,形成有由非晶質矽(aSi)構成的半導體層SEM,且於半導體層SEM上形成有汲極電極DM以及源極電極SM(參照圖2)。汲極電極DM是電連接到資料線DL。源極電極SM與像素電極PIT是透過接觸孔CONT而互相電連接。 A pixel electrode PIT (display electrode) made of a transparent (translucent) conductive film such as indium tin oxide (ITO) is formed on the pixel P. As shown in FIG. 2, the pixel electrode PIT has an opening 32 (for example, a slit), and is formed in a stripe shape. Thin film transistor TFT has a semiconductor layer SEM made of amorphous silicon (aSi) formed on the gate insulating film GSN (refer to FIG. 3), and a drain electrode DM and a source electrode SM are formed on the semiconductor layer SEM (Refer to Figure 2). The drain electrode DM is electrically connected to the data line DL. The source electrode SM and the pixel electrode PIT are electrically connected to each other through the contact hole CONT.
構成像素P的各部之積層構造,並非限定為 圖3之構成的構造,且能夠適用習知之構成。例如在圖3所示的構成中,在TFT基板SUB1中,可於第1玻璃基板GB1上形成閘極線GL(參照圖2),且將閘極絕緣膜GSN形成為覆蓋閘極線GL。又,於閘極絕緣膜GSN上形成資料線DL,且將絕緣膜PAS形成為覆蓋資料線DL。又,絕緣膜PAS上形成有共通電極CIT(顯示用電極),且將上層絕緣膜UPAS形成為覆蓋共通電極CIT。此外,上層絕緣膜UPAS上形成有像素電極PIT,且將配向膜AF形成為覆蓋像素電極PIT。第1玻璃基板GB1的背面側形成有偏光板POL1(第1偏光板)。 The layered structure of each part constituting the pixel P is not limited to The structure of the structure shown in Fig. 3 can be adapted to the conventional structure. For example, in the configuration shown in FIG. 3, in the TFT substrate SUB1, a gate line GL (refer to FIG. 2) may be formed on the first glass substrate GB1, and the gate insulating film GSN may be formed to cover the gate line GL. In addition, the data line DL is formed on the gate insulating film GSN, and the insulating film PAS is formed to cover the data line DL. In addition, a common electrode CIT (display electrode) is formed on the insulating film PAS, and the upper insulating film UPAS is formed to cover the common electrode CIT. In addition, the pixel electrode PIT is formed on the upper insulating film UPAS, and the alignment film AF is formed to cover the pixel electrode PIT. A polarizing plate POL1 (first polarizing plate) is formed on the back side of the first glass substrate GB1.
又,在CF基板SUB2中,於第2玻璃基板GB2(圖3的第2玻璃基板GB2的下表面側)上形成有黑矩陣BM(遮光部)以及彩色濾光片CF(例如,紅色部、綠色部、藍色部)(透光部),且以將這些覆蓋的方式形成有塗覆層OC。第2玻璃基板GB2的顯示面側形成有偏光板POL2(第2偏光板)。據此,第2玻璃基板GB2是與第1玻璃基板GB1相向且位在顯示面側,並且將液晶層LC配置在第1玻璃基板GB1與第2玻璃基板GB2之間。 In addition, in the CF substrate SUB2, a black matrix BM (light-shielding portion) and a color filter CF (for example, the red portion, The green part, the blue part) (light-transmitting part), and the coating layer OC is formed to cover these. A polarizing plate POL2 (second polarizing plate) is formed on the display surface side of the second glass substrate GB2. Accordingly, the second glass substrate GB2 faces the first glass substrate GB1 and is positioned on the display surface side, and the liquid crystal layer LC is arranged between the first glass substrate GB1 and the second glass substrate GB2.
依據圖3所示的構成,液晶顯示裝置LCD雖然具有所謂的IPS(板內切換(In Plane Switching))方式之構成,但第1實施形態之液晶顯示裝置LCD並不限定於此。 According to the structure shown in FIG. 3, although the liquid crystal display device LCD has a structure of a so-called IPS (In Plane Switching) method, the liquid crystal display device LCD of the first embodiment is not limited to this.
接著,簡單說明液晶顯示裝置LCD的驅動方法。將由閘極線驅動電路31輸出的掃瞄用之閘極電壓供給到閘極線GL,並將由資料線驅動電路30輸出的映象用之
資料電壓供給到資料線DL。當將閘極導通電壓供給到閘極線GL時,會使薄膜電晶體TFT的半導體層SEM成為低電阻,而使供給到資料線DL的資料電壓透過源級電極SM供給到像素電極PIT。又,將從共通電極驅動電路(圖未示)輸出的共通電壓供給到共通電極CIT。藉此,在像素電極PIT與共通電極CIT之間產生電場(驅動用電場),並藉由該電場驅動液晶層LC、顯示圖像。
Next, the driving method of the liquid crystal display device LCD will be briefly described. The gate voltage for scanning output from the gate
在此,液晶顯示裝置LCD在其製造工序中,有時會發生像素的顯示亮度比所期望的亮度變得更高之亮點缺陷(像素缺陷)。在圖4中所示為像素P成為亮點缺陷部133時的一個例子。在圖4中所例示的是,在液晶顯示裝置LCD的製造工序中,有機物或金屬等異物33混入TFT基板SUB1與CF基板SUB2之間的情況。在圖4所示的像素P中,液晶的配向會因異物(混入物)33而被擾亂,藉此產生背光光線34的漏光,而成為有亮點缺陷的亮點缺陷部133。
Here, in the manufacturing process of the liquid crystal display device LCD, a bright spot defect (pixel defect) in which the display brightness of the pixel becomes higher than the desired brightness may occur. FIG. 4 shows an example when the pixel P becomes the bright
在第1實施形態的液晶顯示裝置LCD中,具有用於抑制前述亮點缺陷的構成。具體而言,是如圖5所示,於CF基板SUB2的第2玻璃基板GB2的內部形成有使背光光線34的透射量減少之減光部1。減光部1是平面地排列,且形成為從第2玻璃基板GB2的顯示面側觀看時,遮蓋異物33所造成的亮點缺陷部133。亦即,在第1玻璃基板GB1以及第2玻璃基板GB2的至少一者的內部中,配置有從顯示面側觀看,會覆蓋亮點缺陷部133的減光部10。減光部1包含顏色與第1玻璃基板GB1以及第2玻璃基板GB2
的每一個均不同的著色層2、與著色層2之下的形成有複數個(亦即多數個)空隙之空隙層3。著色層2是由非橋接氧空孔中心所構成。
The liquid crystal display device LCD of the first embodiment has a structure for suppressing the aforementioned bright spot defect. Specifically, as shown in FIG. 5, the dimming
圖6是在第2玻璃基板GB2的內部中的非橋接氧空孔中心形成的示意圖。圖7是多光子吸收的示意圖。圖8是顯示使超短脈衝雷射光於玻璃基板進行內部聚光之時的能量密度中之加工現象的圖。圖9是顯示減光部1之加工原理的示意圖。圖10是顯示加工後的雷射光因空隙而散射之情形的聚光點附近的放大圖。
Fig. 6 is a schematic view showing the formation of the center of the non-bridging oxygen hole in the inside of the second glass substrate GB2. Figure 7 is a schematic diagram of multiphoton absorption. FIG. 8 is a diagram showing the processing phenomenon in the energy density when the ultrashort pulse laser light is internally focused on the glass substrate. FIG. 9 is a schematic diagram showing the processing principle of the light-reducing
如圖6所示,當將紫外線或迦瑪射線(γ射線)100對在玻璃基板GB內部的非橋接氧照射時,會放出1個電子,而形成非橋接氧空孔中心。此非橋接氧空孔中心,具有從紫外光區至可見光區的吸收性,且呈現紅褐色。通常,此非橋接氧孔穴中心,雖然是藉由照射紫外線或迦瑪射線等的短波長光線來形成,但藉由利用稱為多光子吸收的現象之作法,也能夠藉由更長之波長的光線照射來形成。如圖7(a)所示,短波長的光線所具有的能量較大,在1個光子的吸收下,非橋接氧就會放出1個電子,並形成非橋接氧空孔中心。另一方面,長波長的光線所具有的能量較小,要以1個光子放出電子時,並無法賦予充分的能量。但是,在飛秒雷射光之類的超短脈衝雷射光的情形下,由於電場強度非常強,因此有可在聚光區域中同時吸收複數個光子之情形。此種情形稱為多光子吸收(參照圖7(b)),藉由多光子吸收,非橋接氧能夠獲得放出電子所需的充分的能量(從
基底狀態至激發狀態的能量),並形成非橋接氧空孔中心。當將聚光區域的能量密度在空間上形成得更大時,能夠引發所謂的折射率變化、或空孔形成、或裂隙形成之現象。使用高聚光透鏡使超短脈衝雷射光4聚光在玻璃基板GB的內部時,當將超短脈衝雷射光4的脈衝能量設為適當的值時,會在焦點F上引發直徑1nm以上且50μm以下的微小之空孔形成(參照圖8之空孔形成)。由於藉由使超短脈衝雷射光4與玻璃基板GB的位置在玻璃基板GB的面方向上相對地移動,可如圖9所示,在玻璃基板GB的內部一邊使焦點F在面方向上移動一邊將超短脈衝雷射光4照射在玻璃基板GB上,因此可在面方向上形成多數個直徑1nm以上且50μm以下的微小之空孔,而形成空隙層3。此時,在玻璃基板GB之比焦點F更接近表面之處,雖然能量密度沒有變高到可形成空孔的程度,但存在有在形成非橋接氧空孔中心上會保有充分的能量之區域。藉由使超短脈衝雷射光4與玻璃基板GB的位置在面方向上相對地移動,以於玻璃基板GB的內部在面方向上將此區域擴散,而形成著色層2。相對於由此著色層2與空隙層3構成的減光部1,從玻璃基板GB的背面照射的背光光線34首先是藉由空隙層3而被散射得很細。然後,由於可藉由著色層2吸收被散射且透射而來的光的方式來進行減光,並使已被減光的光出來到玻璃基板GB的表面,因此能夠抑制起因於亮點缺陷之顯示品質的降低。又,使超短脈衝雷射光4與玻璃基板GB的位置在面方向上相對地移動之時,超短脈衝雷射4在焦點F上聚
光後,未使用於加工的光會擴散並且通過玻璃基板GB,而照射到在其前面的彩色濾光片CF或液晶層LC。從焦點F至玻璃基板GB的背面的距離較短時,會成為在光充分擴散且能量密度下降前就照射到彩色濾光片CF或液晶層LC的情形,恐有使彩色濾光片CF或液晶層LC蒙受損傷的疑慮。不過,藉由在那樣的照射下所形成的空隙層3,如圖10所示,可將未使用於加工的光線散射得很細,而降低能量密度。藉此,通過玻璃基板GB的光即使照射到彩色濾光片CF或液晶層LC,使彩色濾光片CF或液晶層LC蒙受的損傷還是很小的。超短脈衝雷射光4需要有能夠在玻璃基板GB的內部引發多光子吸收之類的脈衝寬度、波長以及脈衝能量,且較理想的是,波長為100以上且10000nm以下,脈衝寬度為1fs以上~100ps以下,脈衝能量為1μJ以上且20μJ以下。又,高聚光透鏡宜為NA(數值孔徑)是0.3以上且0.6以下,且更佳為具有像差補正功能之透鏡。藉由將此條件的雷射光4照射到玻璃基板GB,可在焦點F的位置上形成如圖9的含有多數個空孔的空隙層3,且在比焦點F的位置更接近玻璃基板GB之表面的位置上形成著色層2。
As shown in FIG. 6, when ultraviolet rays or gamma rays (γ rays) 100 are irradiated to the non-bridging oxygen inside the glass substrate GB, one electron is released to form the center of the non-bridging oxygen hole. The center of the non-bridging oxygen hole has absorption from the ultraviolet light region to the visible light region, and is reddish-brown. Usually, this non-bridging oxygen hole center is formed by irradiating short-wavelength light such as ultraviolet rays or gamma rays, but by using a phenomenon called multiphoton absorption, it can also be formed by longer wavelengths. Light shines to form. As shown in Figure 7(a), short-wavelength light has greater energy. Under the absorption of one photon, the non-bridging oxygen will release an electron and form the center of the non-bridging oxygen hole. On the other hand, long-wavelength light has low energy, and when it is necessary to emit electrons with one photon, sufficient energy cannot be given. However, in the case of ultra-short pulse lasers such as femtosecond lasers, since the electric field is very strong, there are cases where multiple photons can be absorbed in the condensing area at the same time. This situation is called multiphoton absorption (refer to Figure 7(b)). Through multiphoton absorption, non-bridging oxygen can obtain sufficient energy for electron emission (from
The energy from the basal state to the excited state), and form a non-bridging oxygen hole center. When the energy density of the condensing area is made larger spatially, it can cause the phenomenon of so-called refractive index change, or formation of voids, or formation of cracks. When a high condensing lens is used to condense the ultra-short
依據第1實施形態,在第1玻璃基板GB1與第2玻璃基板GB2的至少一者的內部中,具有從顯示面側觀看可覆蓋亮點缺陷部133的減光部1,並且減光部1是由顏色與第1玻璃基板GB1以及第2玻璃基板GB2均不同的著色層2、與包含複數個空隙之空隙層3所構成。藉由如此地構成,能夠抑制使彩色濾光片CF以及液晶層LC蒙受的損
傷,且能夠抑制起因於亮點缺陷之顯示品質的降低。
According to the first embodiment, in the inside of at least one of the first glass substrate GB1 and the second glass substrate GB2, there is a dimming
(第1變形例) (First modification)
圖11是顯示在第1實施形態的第1變形例之液晶顯示裝置LCD中,用於抑制前述亮點缺陷之其他的構成。再者,在圖11中,為了簡便起見,雖然所例示的是以下的第2變形例以及第3變形例也存在的例子,但並非限定於此例,除了第1實施形態之外,也可以僅存在第1變形例~第3變形例的任1個,當然也可以是這些之中的任意的組合。 FIG. 11 shows another structure for suppressing the aforementioned bright spot defect in the liquid crystal display device LCD of the first modification of the first embodiment. In addition, in FIG. 11, for the sake of simplicity, although the following examples of the second modification and the third modification also exist, they are not limited to this example, and in addition to the first embodiment, There may be only any one of the first modification to the third modification, and of course any combination of these may be used.
形成減光部1之時,藉由加工條件能夠在著色層2(第1著色層)與空隙層3之間形成間隙。由於照射到此間隙之光的能量密度比形成著色層2時高,且比形成空隙層3時低,因此如在圖8一般,可形成有使玻璃基板GB的折射率(1.4~1.6)最大增加0.02之折射率變化層5(第1折射率變化層)。換言之,減光部1在第1著色層2與空隙層3之間,更包含顯示比第1玻璃基板GB1以及第2玻璃基板GB2更大的折射率之折射率變化層5。由於藉由此折射率變化層5,能夠更高精度地遮蔽亮點缺陷的光,因此更能夠防止顯示裝置之顯示品質的降低。
When forming the light-reducing
(第2變形例) (Second modification)
接著,以下說明第1實施形態的第2變形例。也可以設成在比焦點F(空隙層3)更深的位置(第1玻璃基板GB1側)上也形成著色層2a(第2著色層)。此時,空隙層3是位在第1著色層2與第2著色層2a之間。第2著色層2a的顏色與第1玻璃基板GB1以及第2玻璃基板GB2的每一個均不同。這
是因為在焦點F上形成空隙層3後的透射光之能量密度十分大,因此可以作為藉由非橋接氧空孔中心形成所造成的引發著色之結果,而形成第2著色層2a。不過,由於第2著色層2a的著色濃度依存於能量密度,因此藉由透射光所形成的第2著色層2a的著色濃度會比藉由入射光所形成的第1著色層2更低。藉由如此地形成的第2著色層2a,以使減光部1的減光能力更加提升。
Next, a second modification of the first embodiment will be described below. It is also possible to provide the
(第3變形例) (3rd modification)
接著,以下說明第1實施形態的第3變形例。減光部1宜做成更包含第2折射率變化層5a,該第2折射率變化層5a是位在空隙層3與第2著色層2a之間並藉由在焦點F上形成空隙層3後的透射光而形成,且顯示比第1玻璃基板GB1或第2玻璃基板GB2還大的折射率。在此情況下,由於折射率的增加量依存於能量密度,因此藉由透射光所形成的第2折射率變化層5a之折射率會比藉由入射光所形成的折射率變化層5更小。第1折射率變化層5與第1玻璃基板GB1以及第2玻璃基板GB2的折射率之差,最大為0.015左右。第2折射率變化層5a是形成在離異物33更近的位置上。因此,背光光線34即使因異物33的影響而在傾斜方向上擴散時,也能以第2折射率變化層5a使其折射,而能夠縮小背光光線34的擴散角度。藉此,可抑制背光光線34的擴散,且相較於未形成有第2折射率變化層5a的情況,也使入射到空隙層3的背光光線34增加。因此,使減光部1的減光能力提升。
Next, a third modification of the first embodiment will be described below. The dimming
在此,第2變形例之第2著色層2a是使用波長
為200nm以上且9000nm以下、脈衝寬度為2fs以上~90ps以下、且脈衝能量為2μJ以上且18μJ以下的雷射光而形成。將雷射光聚光之透鏡的NA是0.35以上且0.55以下。
Here, the second
第3變形例之第2折射率變化層5a是使用波長為300nm以上且8000nm以下、脈衝寬度為3fs以上~80ps以下、且脈衝能量為3μJ以上且17μJ以下的雷射光而形成。將雷射光聚光之透鏡的NA是0.4以上且0.5以下。
The second refractive
(第4變形例) (4th modification)
接著,以下說明第1實施形態的第4變形例。當將脈衝能量降低至1μJ以上且4μJ以下來照射雷射光時,雖然可在焦點F形成空隙層3,但在比焦點F更接近玻璃基板GB的表面之位置上,則不會形成著色層2、或成為目視下幾乎無法辨識的薄的著色。亦即,僅空隙層3單獨被形成。空隙層3即使單獨存在,雖然也具有使背光光線34散射的效果,但並無減光的效果。在此狀態下,可將脈衝能量提高至3μJ以上且13μJ以下,並將雷射光照射成聚光在比單獨的空隙層3更接近玻璃基板GB的表面之位置上,以形成上述實施形態以及變形例之減光部1。此時,在焦點F被聚光,且在其附近發生所謂的著色或空隙形成的反應。雖然可將未使用於此反應的能量一邊擴散一邊向玻璃基板GB的背面照射,但由於其間存在單獨空隙層3,因此雷射光會藉由空隙層3的多數個空隙而散射,並使能量密度降低。藉此,能夠抑制對於位在接近玻璃基板GB的背面的位置上之彩色濾光片CF以及液晶層LC的損傷。加工後,可使由空隙層3與著
色層2構成的減光部1形成在比單獨空隙層更接近玻璃基板GB的表面之位置上。
Next, a fourth modification of the first embodiment will be described below. When the pulse energy is reduced to 1 μJ or more and 4 μJ or less to irradiate laser light, although the
(其他之變形例) (Other variants)
減光部1也可以形成在TFT基板SUB1的第1玻璃基板GB1上。又,減光部1也可以在第1玻璃基板GB1以及第2玻璃基板GB2的兩者都形成。亦即,減光部1只要形成在TFT基板SUB1的第1玻璃基板GB1以及CF基板SUB2的第2玻璃基板GB2的至少任何一者上即可。
The
當在第1玻璃基板GB1與第2玻璃基板GB2的兩者都形成減光部1時,能夠使減光能力提升。此時,在兩者都形成減光部1的情況,亦可使各自的減光部1的減光量,無論那一個都比僅使其形成在其中一者的玻璃基板GB的情況更小。因此,能夠降低照射在各個玻璃基板的超短脈衝雷射光4的輸出,而變得難以變成透射光所造成之對下層的損傷。
When the
又,僅在第1玻璃基板GB1與第2玻璃基板GB2的兩者中的任何一者的玻璃基板GB上形成減光部1時,以在第2玻璃基板GB2上形成減光部1為較佳。其原因在於,藉由因異物33形成的亮點缺陷而照射的光,在比異物33更靠顯示像素側遮斷的作法更能夠提升顯示品質。尤其是,顯示裝置具有位在第1玻璃基板GB1與第2玻璃基板GB2之間的液晶層LC,且在此液晶層LC內含有因異物33形成的亮點缺陷部133的情況下,宜在第2玻璃基板GB2形成減光部1。這是為了遮斷起因於因異物33而產生之液晶
分子的配置排列紊亂的光。
In addition, when the dimming
又,形成在第1玻璃基板GB1的減光部1之在第1玻璃基板GB1的內部的位置、與形成在第2玻璃基板GB2的減光部1之在第2玻璃基板GB2的內部的位置,可以是相同的,也可以是不同的。例如,可將減光部1形成在第1玻璃基板GB1的內部的背光照明側,也可將減光部1形成在第2玻璃基板GB2的內部的液晶層LC側。不過,以盡量使減光部1形成在接近異物33的位置之作法為較佳。至於原因,則是因為在形成的減光部1的面積相同之情況下,使其形成在接近異物33的部位之作法,可以對由於異物33而在傾斜方向上擴散的光也進行減光。
In addition, the position of the dimming
依據前述的構成,由於能夠降低成為亮點缺陷部133的像素之亮度,因此能夠使亮點缺陷(漏光)變得不明顯。藉此,能夠抑制起因於亮點缺陷之顯示品質的降低,並且能夠提高液晶顯示裝置LCD的製造成品率。
According to the aforementioned configuration, since the brightness of the pixel that becomes the bright
(第2實施形態) (Second Embodiment)
接著,作為本發明的第2實施形態,針對第1實施形態之液晶顯示裝置LCD的製造方法進行說明。該方法是針對具備第1玻璃基板GB1、及與前述第1玻璃基板GB1相向且位於顯示面側的第2玻璃基板GB2的顯示裝置之製造方法來進行說明。此顯示裝置的製造方法具有:檢測工序,進行前述顯示裝置的亮燈檢查以檢測前述像素的亮點缺陷;及照射工序,對前述第1或第2玻璃基板GB1或GB2照射雷射光4來形成著色層2以及空隙層3,以覆蓋前述亮點缺陷。
在前述照射工序所照射的雷射光4是波長為100nm以上且10000nm以下、脈衝寬度為1飛秒以上且100皮秒以下、脈衝能量為1μJ以上且20μJ以下,並且是以NA為0.3以上且0.6以下的透鏡聚光。
Next, as a second embodiment of the present invention, a method of manufacturing the liquid crystal display device LCD of the first embodiment will be described. This method is demonstrated about the manufacturing method of the display device provided with the 1st glass substrate GB1, and the 2nd glass substrate GB2 which opposes the said 1st glass substrate GB1, and is located on the display surface side. The manufacturing method of this display device includes: an inspection step of performing a light-on inspection of the display device to detect bright spot defects of the pixels; and an irradiation step of irradiating the first or second glass substrate GB1 or GB2 with
更詳細而言,本製造方法包含有TFT基板SUB1的製造工序、CF基板SUB2的製造工序、TFT基板SUB1以及CF基板SUB2的貼合工序、液晶注入工序、顯示面板DP的亮燈檢查工序、與亮點缺陷修正工序。 In more detail, this manufacturing method includes the manufacturing process of the TFT substrate SUB1, the manufacturing process of the CF substrate SUB2, the bonding process of the TFT substrate SUB1 and the CF substrate SUB2, the liquid crystal injection process, the lighting inspection process of the display panel DP, and Bright spot defect correction process.
前述各工序之中,TFT基板SUB1的製造工序、CF基板SUB2的製造工序、TFT基板SUB1以及CF基板SUB2的貼合工序、液晶注入工序以及亮燈檢查工序能夠適用習知的方法。 Among the aforementioned processes, the manufacturing process of the TFT substrate SUB1, the manufacturing process of the CF substrate SUB2, the bonding process of the TFT substrate SUB1 and the CF substrate SUB2, the liquid crystal injection process, and the lighting inspection process can apply conventional methods.
例如,TFT基板SUB1的製造工序包含在第1玻璃基板GB1上形成閘極線GL、資料線DL、像素電極PIT、共通電極CIT、各種絕緣膜以及偏光板POL1的工序。使在TFT基板SUB1所規定的像素P包含對應於紅色的紅色像素Pr、對應於綠色的綠色像素Pg、以及對應於藍色的藍色像素Pb亦可。又,CF基板SUB2的製造工序包含在第2玻璃基板GB2上形成黑矩陣BM、彩色濾光片CF、以及偏光板POL2的工序。 For example, the manufacturing process of the TFT substrate SUB1 includes a process of forming a gate line GL, a data line DL, a pixel electrode PIT, a common electrode CIT, various insulating films, and a polarizing plate POL1 on the first glass substrate GB1. The pixel P defined on the TFT substrate SUB1 may include a red pixel Pr corresponding to red, a green pixel Pg corresponding to green, and a blue pixel Pb corresponding to blue. In addition, the manufacturing process of the CF substrate SUB2 includes a process of forming the black matrix BM, the color filter CF, and the polarizing plate POL2 on the second glass substrate GB2.
以下,針對本製造方法之中的亮燈檢查工序以及亮點缺陷修正工序進行說明。 Hereinafter, the lighting inspection process and the bright point defect correction process in this manufacturing method will be described.
圖12A是顯示亮點缺陷的修正方法之流程圖。圖12B是顯示能夠實施亮點缺陷之修正方法的顯示裝置之製造裝
置95的方塊圖。
Fig. 12A is a flowchart showing a method for correcting a bright spot defect. FIG. 12B shows the manufacturing device of the display device capable of implementing the correction method of the bright
顯示裝置的製造裝置95至少具備有進行顯示裝置的亮燈檢查以檢測像素的亮點缺陷之檢查裝置90、與亮點缺陷修正裝置6。製造裝置95也可以更具備有控制裝置93與演算部91。控制裝置93會分別對檢查裝置90、演算部91與亮點缺陷修正裝置6進行動作控制。演算部91是如後述地進行預定的演算。
The
首先,在亮燈檢查工序中,是藉由檢查裝置90檢測亮點缺陷。例如,檢查裝置90可使顯示面板DP全部亮燈或使其1排排地亮燈,來測定各像素的亮度(步驟S001)。
First, in the lighting inspection process, the
接著,檢查裝置90會將被測定出亮度超出閾值的像素作為亮點缺陷部133(像素缺陷部)而檢測(步驟S002)。檢查裝置90會將作為亮點缺陷部133而檢測出的像素之位置資訊輸出到後述的亮點缺陷修正裝置6。亮點缺陷部133的檢測也可以藉由作業者的目視來進行。當檢測出亮點缺陷部133後,即可轉移至亮點缺陷修正工序(步驟S030)。未檢測出亮點缺陷部133時,即結束此流程。
Next, the
於圖14所示的是用於進行亮點缺陷修正工序(步驟S030)的亮點缺陷修正裝置6之概要構成。亮點缺陷修正裝置6包含有超短脈衝雷射振盪機構7、與高聚光透鏡8等之光學系統。
Shown in FIG. 14 is a schematic configuration of the bright spot
在第2實施形態中,是作為超短脈衝雷射振盪機構7而使用1552nm的雷射光波長以及脈衝寬度800fs
的雷射光,來作為一個例子。
In the second embodiment, a laser wavelength of 1552nm and a pulse width of 800fs are used as the ultrashort pulse
亮點缺陷修正工序(步驟S030)包含步驟S003~步驟S006的工序。 The bright spot defect correction process (step S030) includes the processes from step S003 to step S006.
在亮點缺陷修正工序(步驟S030)中,首先,是令亮點缺陷修正裝置6從檢查裝置90取得亮點缺陷的像素之位置資訊以及形狀資訊(例如,位置、大小、形狀)(步驟S003)。
In the bright spot defect correcting process (step S030), first, the bright spot
接著,依據所取得的形狀資訊,在演算部91演算照射超短脈衝雷射光4而形成的減光部1之形狀以及位置資訊(例如,位置、大小、形狀)(步驟S004)。
Next, based on the obtained shape information, the
接著,在控制裝置93的控制下,根據在演算部91演算而取得的減光部1之位置資訊,將亮點缺陷修正裝置6的高聚光透鏡8等之光學系統對位。
Next, under the control of the
接著,在控制裝置93的控制下,亮點缺陷修正裝置6會調整成使超短脈衝雷射光4的焦點F的位置對準於第2玻璃基板GB2的內部的所期望之位置。焦點F的位置是例如,根據成為亮點缺陷的原因之異物的大小或所測定的亮度值而調整。例如,如圖14所示,在第2玻璃基板GB2的內部調整成使超短脈衝雷射光4的焦點F對準於異物33的附近側。
Next, under the control of the
接著,在控制裝置93的控制下,亮點缺陷修正裝置6會從超短脈衝雷射振盪機構7射出超短脈衝雷射光4。藉此,可將從超短脈衝雷射振盪機構7射出的超短脈衝雷射光4,藉由高聚光透鏡8聚光於第2玻璃基板GB2的
內部的焦點F來照射。
Next, under the control of the
接著,在控制裝置93的控制下,藉由在以移動裝置92使超短脈衝雷射光4的照射位置移動時,並且連續地照射超短脈衝雷射光4之作法,來形成減光部1(步驟S005),而完成亮點缺陷修正工序(步驟S030)(步驟S006)。
Next, under the control of the
依據前述實施形態之製造方法或製造裝置,由於能夠使用現有的檢查裝置進行檢查,並且僅使有缺陷者流到修正工序上,因此具有不會對整體的工序節拍造成影響之優點。 According to the manufacturing method or manufacturing apparatus of the foregoing embodiment, since the existing inspection device can be used for inspection, and only defective ones are flowed to the correction process, it has the advantage of not affecting the overall process tempo.
(變形例) (Modification)
圖13是作為第2實施形態的變形例而顯示亮點缺陷的其他之修正方法的流程圖。 Fig. 13 is a flowchart showing another method of correcting a bright spot defect as a modification of the second embodiment.
首先,在檢查裝置90中,使顯示裝置亮燈(步驟S007),檢測亮點缺陷(步驟S008)。檢查裝置90是與步驟S002同樣地,將被測定亮度超出閾值的像素作為亮點缺陷部133(像素缺陷部)而檢測。檢查裝置會將作為亮點缺陷部133而檢測出的像素之位置資訊輸出到亮點缺陷修正裝置6。亮點缺陷部133的檢測也可以藉由作業者的目視來進行。當檢測出亮點缺陷部133時,即可轉移至亮點缺陷修正工序(步驟S040)。未檢測出亮點缺陷部133時,即結束此流程。
First, in the
亮點缺陷修正工序(步驟S040)包含步驟S009~步驟S013。 The bright spot defect correction process (step S040) includes step S009 to step S013.
在亮點缺陷修正工序(步驟S040)中,首先,是令亮點缺陷修正裝置6從檢查裝置90取得亮點缺陷的像
素之位置資訊以及形狀資訊(例如,位置、大小、形狀)(步驟S009)。
In the bright spot defect correction step (step S040), first, the bright spot
接著,依據所取得的形狀資訊,在演算部91演算照射超短脈衝雷射光4而形成的減光部1之形狀以及位置資訊(例如,位置、大小、形狀)(步驟S010)。
Next, based on the obtained shape information, the
接著,在控制裝置93的控制下,根據在演算部91演算而取得的減光部1之位置資訊,將亮點缺陷修正裝置6的高聚光透鏡8等之光學系統對位。
Next, under the control of the
接著,在控制裝置93的控制下,亮點缺陷修正裝置6會調整成使超短脈衝雷射光4的焦點F的位置對準於第2玻璃基板GB2的內部的所期望之位置。焦點F的位置是例如,根據成為亮點缺陷的原因之異物的大小或所測定的亮度值而調整。例如,如圖14所示,在第2玻璃基板GB2的內部調整成使作為高能量光束之超短脈衝雷射光4的焦點F對準於異物33的附近側。
Next, under the control of the
接著,在控制裝置93的控制下,亮點缺陷修正裝置6會從超短脈衝雷射振盪機構7射出超短脈衝雷射光4。藉此,可將從超短脈衝雷射振盪機構7射出的超短脈衝雷射光4,藉由高聚光透鏡8聚光於第2玻璃基板GB2的內部的焦點F來照射。
Next, under the control of the
接著,在控制裝置93的控制下,藉由在以移動裝置92使超短脈衝雷射光4的照射位置移動時,並且連續地照射超短脈衝雷射光4之作法,來形成減光部1(步驟S011)。
Next, under the control of the
已形成減光部1後,在控制裝置93的控制下,再度進行亮燈檢查(步驟S012),並確認亮點缺陷消失之情形,而完成亮點缺陷修正工序(步驟S040)(步驟S013)。
After the dimming
在控制裝置93的控制下,在第2次以後的亮燈檢查工序中檢測出亮點缺陷的情況下,返回到步驟S009,並再度進行亮點缺陷修正(從步驟S009至S011)。在第2次以後的亮點缺陷修正中,亦可為與在第1次形成的減光部1形狀或大小不同。
Under the control of the
像這樣,在第2實施形態或其變形例之亮點缺陷修正工序(步驟S030或S040)中,由於藉由將焦點對焦於玻璃基板GB來照射高能量光束,而使玻璃材料著色,因此不會使玻璃基板本身的形狀產生變化。不會有例如,將玻璃基板GB的內部或表面破壞而使外形變化之情形。因此,可以在例如TFT基板SUB1以及CF基板SUB2上形成有偏光板POL1、POL2的狀態下,亦即在顯示面板DP的完成後,執行前述亮點缺陷修正工序(步驟S030或S040)。又,由於減光部1與玻璃基板GB皆由相同材料構成,因此也不會有折射率變化之情形。
In this way, in the bright point defect correction step (step S030 or S040) of the second embodiment or its modification, the glass material is colored by focusing the focus on the glass substrate GB and irradiating the high-energy beam to color the glass material. The shape of the glass substrate itself is changed. For example, there is no case where the inside or surface of the glass substrate GB is destroyed to change the shape. Therefore, the aforementioned bright spot defect correction process (step S030 or S040) can be performed in a state where the polarizing plates POL1 and POL2 are formed on, for example, the TFT substrate SUB1 and the CF substrate SUB2, that is, after the display panel DP is completed. In addition, since the dimming
根據此變形例,藉由在修正後進行再度檢查,能夠確認修正是否已充分進行、有無因著色而形成黑點不良化之情形。 According to this modified example, it is possible to check whether the correction has been sufficiently performed and whether the black spots are defective due to coloring by performing a re-inspection after the correction.
(其他之變形例) (Other variants)
再者,在亮點缺陷修正工序(步驟S030或S040)中,亦可因應對應於成為亮點缺陷的亮點缺陷部133的像素之顏
色,而調整超短脈衝雷射光4的強度來照射。藉此,減光部1會因應對應於亮點缺陷部133的像素之顏色而形成為使透光率不同。例如,亦可將覆蓋對應於綠色像素的亮點缺陷部133之減光部1形成為使該減光部1的透光率,比覆蓋對應於其他顏色的像素(例如,紅色像素、藍色像素)的亮點缺陷部133之減光部1的透光率更低。
Furthermore, in the bright point defect correction process (step S030 or S040), it is also possible to respond to the color of the pixel corresponding to the bright
在前述的說明中,雖然所顯示的是在TFT基板SUB1與CF基板SUB2之間混入有異物33之情況下的亮點缺陷,但亮點缺陷的原因並不限定於此。並可引發例如,薄膜電晶體TFT的不良狀況所造成的漏光、或起因於配置在基板間的間隔物(spacer)的漏光等。第2實施形態或其變形例之亮點缺陷修正方法也能夠適用在這些亮點缺陷上。
In the foregoing description, although the bright spot defect is shown when the
又,可產生亮點缺陷的異物33之混入位置並不限定於在TFT基板SUB1與CF基板SUB2之間。例如,在第1玻璃基板GB1與偏光板POL1之間混入有異物的情況下也可能產生亮點缺陷。在此情況下,亦可將減光部1形成在第1玻璃基板GB1的內部中的異物之附近。又,在第2玻璃基板GB2與偏光板POL2之間混入有異物的情況下,也可能產生亮點缺陷。在此情況下,亦可將減光部1形成在第2玻璃基板GB2的內部中的異物之附近。像這樣,異物可能混入到顯示面板DP的不特定的位置。因此,例如,如圖15所示,在1片顯示面板DP中,使其產生亮點缺陷的異物1001、1000已混入在第1玻璃基板GB1及偏光板POL1之間(第1位置)、與第2玻璃基板GB2及偏光板POL2之間(第
2位置)時,亦可將第1減光部1對應於第1位置的異物1000,而形成在第1玻璃基板GB1的內部中的異物1000之附近,並將第2減光部1a對應於第2位置的異物1001而形成在第2玻璃基板GB2中的內部的異物1001之附近。再者,在此情況下,考慮亮點缺陷修正工序的作業效率,而將第1減光部1及第2減光部1a兩者都形成在第2玻璃基板GB2的顯示面側亦可。又,亦可將第1減光部1與第2減光部1a形成為透射率互相不同。具體而言,是在圖15所示的位置上配置第2減光部1a。在此情況下,在像素P內,於圖15中,是使異物1000存在於第2玻璃基板GB2與偏光板POL2的界面的偏右處,異物1001存在於第1玻璃基板GB1與偏光板POL1的界面的偏左處,且異物1000以及異物1001皆比異物33小。為了修正這些異物1000、異物1001所造成的亮點缺陷,如圖15所示,在異物1000的液晶層LC側設置第1減光部1,且在異物1001的液晶層LC側設置第2減光部1a。藉此,能夠更有效率地進行亮點缺陷的修正。
In addition, the mixing position of the
以上,雖然針對本發明的實施形態進行了說明,但本發明並非限定於前述各實施形態者,在不脫離本發明的宗旨之範圍內,本發明所屬技術領域中具有通常知識者從前述各實施形態中進行了適宜變更的形態也可包含於本發明的技術範圍中。 Although the embodiments of the present invention have been described above, the present invention is not limited to the foregoing embodiments, and within the scope not departing from the spirit of the present invention, those with ordinary knowledge in the technical field to which the present invention pertains can implement from the foregoing. The form in which the form is suitably changed can also be included in the technical scope of this invention.
又,可以藉由將前述各種實施形態或變形例之中的任意之實施形態或變形例適宜組合,以發揮各自具有之效果。又,實施形態彼此之組合或實施例彼此之組合 或實施形態與實施例之組合皆是可能的,並且不同之實施形態或實施例中的特徵彼此之組合也是可能的。 In addition, by appropriately combining any of the aforementioned various embodiments or modifications, the effects possessed by each can be exerted. Also, the combination of the embodiments or the combination of the embodiments Or the combination of the embodiment and the embodiment is possible, and the combination of the features in different embodiments or embodiments with each other is also possible.
本發明之前述態樣之顯示裝置與其製造方法以及製造裝置能夠抑制起因於亮點缺陷之顯示品質的降低,尤其是對內建顯示裝置的液晶顯示器或有機EL平面面板顯示器是有用的,且能夠廣泛地利用在要求高亮度、高精細、畫質均一性的顯示器之顯示裝置與其製造方法以及製造裝置等、以及具有顯示裝置之電氣機器或裝置上。 The display device of the foregoing aspect of the present invention, its manufacturing method, and its manufacturing device can suppress the degradation of display quality caused by bright spot defects, and is particularly useful for liquid crystal displays or organic EL flat panel displays with built-in display devices, and can be widely used. It is widely used in display devices, manufacturing methods and manufacturing devices of displays that require high brightness, high definition, and image quality uniformity, as well as electrical equipment or devices with display devices.
1‧‧‧減光部 1‧‧‧Dimming part
2‧‧‧著色層 2‧‧‧Coloring layer
3‧‧‧空隙層 3‧‧‧Void layer
33‧‧‧異物 33‧‧‧Foreign body
34‧‧‧背光光線 34‧‧‧Backlight
133‧‧‧亮點缺陷部 133‧‧‧Bright spot defect department
134‧‧‧背光照明 134‧‧‧Backlighting
A1、A2‧‧‧線 Line A1, A2‧‧‧
AF‧‧‧配向膜 AF‧‧‧Orientation film
BM‧‧‧黑矩陣 BM‧‧‧Black matrix
CF‧‧‧彩色濾光片 CF‧‧‧Color filter
CIT‧‧‧共通電極 CIT‧‧‧Common electrode
DL‧‧‧資料線 DL‧‧‧Data line
GB1‧‧‧第1玻璃基板 GB1‧‧‧The first glass substrate
GB2‧‧‧第2玻璃基板 GB2‧‧‧Second glass substrate
GSN‧‧‧閘極絕緣膜 GSN‧‧‧Gate insulation film
LC‧‧‧液晶層 LC‧‧‧Liquid crystal layer
OC‧‧‧塗覆層 OC‧‧‧Coating
PIT‧‧‧像素電極 PIT‧‧‧Pixel electrode
POL1、POL2‧‧‧偏光板 POL1, POL2‧‧‧Polarizer
PAS‧‧‧絕緣膜 PAS‧‧‧Insulating film
SUB1‧‧‧TFT基板 SUB1‧‧‧TFT substrate
SUB2‧‧‧CF基板 SUB2‧‧‧CF substrate
UPAS‧‧‧上層絕緣膜 UPAS‧‧‧Upper insulating film
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