TWI713919B - Process control system and method - Google Patents

Process control system and method Download PDF

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TWI713919B
TWI713919B TW107138200A TW107138200A TWI713919B TW I713919 B TWI713919 B TW I713919B TW 107138200 A TW107138200 A TW 107138200A TW 107138200 A TW107138200 A TW 107138200A TW I713919 B TWI713919 B TW I713919B
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deposition
thickness
machine
target value
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TW202016352A (en
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吳皇衛
陳煌文
林政雲
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力晶積成電子製造股份有限公司
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

A process control system includes: a tool, a database, a predicted target unit, an advanced process control (APC) unit, and a manufacturing execution unit. The tool performs a chemical vapor deposition (CVD) process on wafers of a batch. The database is used to store and provide the history information of the tool. The predicted target unit calculates the target value of a physical property of the deposited film according to a sensor information from the outside of the tool and a database correlation table. A process parameter is decided by the APC unit according to the history information of the tool from the database, the product information of the batch, and the target value of the physical property of the deposited film from the predicted target unit. The manufacturing execution unit drives the tool to perform the CVD process according to the process parameter from the APC unit.

Description

製程控制系統與方法Process control system and method

本發明是有關於一種製程控制技術，且特別是有關於一種製程控制系統與方法。 The present invention relates to a process control technology, and particularly relates to a process control system and method.

沉積製程是半導體製程中最重要製程之一，例如化學氣相沉積(CVD)製程，通常是在機台內進行常壓或低壓的化學氣相沉積製程。目前已發展各種製程控制系統與方法來改善製程期間對於沉積膜層的品質與製程精確度。 The deposition process is one of the most important processes in the semiconductor process, such as a chemical vapor deposition (CVD) process, which is usually performed in a machine at atmospheric pressure or low pressure. At present, various process control systems and methods have been developed to improve the quality and process accuracy of deposited films during the process.

現有的製程控制方法往往著重於機台內部的控制以及機台本身的監控，對於機台之外的環境所造成的影響則沒有相應的解決辦法。由於外在環境中有許多不可控的因子，例如天氣變異與自然災害等，會直接或間接地影響機台內所進行的製程。譬如颱風會造成大氣壓力降低、地震會造成機台位移等。當這些不可控的因子發生且嚴重影響製程時，大多是採行停機的方式來避免產品品質不良。然而，一旦停機不但影響產品產期推移，還會造成堆貨狀態。 The existing process control methods often focus on the internal control of the machine and the monitoring of the machine itself, and there is no corresponding solution to the impact caused by the environment outside the machine. Because there are many uncontrollable factors in the external environment, such as weather variations and natural disasters, they will directly or indirectly affect the manufacturing process in the machine. For example, a typhoon can cause atmospheric pressure to drop, and an earthquake can cause machine displacement. When these uncontrollable factors occur and severely affect the manufacturing process, most of them use shutdown methods to avoid poor product quality. However, once the shutdown will not only affect the production period of the product, but also cause a stockpiling state.

本發明提供一種製程控制系統，可根據外在環境調整製程參數，以減少產品受外在環境影響的程度。 The present invention provides a process control system, which can adjust process parameters according to the external environment, so as to reduce the degree to which products are affected by the external environment.

本發明另提供一種製程控制方法，可根據外在環境中不可控的因子調控製程參數，以確保製程精確度。 The present invention also provides a process control method, which can adjust control process parameters based on uncontrollable factors in the external environment to ensure process accuracy.

本發明的製程控制系統，包括：機台、資料庫、目標值預測單元、先進製程控制(APC)單元以及製造執行單元。機台可對批次的多個晶圓進行化學氣相沉積製程。資料庫則用於儲存並提供所述機台的歷史資訊。目標值預測單元根據來自機台之外在環境的一感測器資訊與資料庫相關表單，求出沉積膜層的物理性質之目標值。先進製程控制單元根據來自上述資料庫的機台歷史資訊、批次的產品資訊以及來自上述目標值預測單元的物理性質之目標值來決定製程參數。製造執行單元根據來自先進製程控制單元的製程參數，驅動機台進行化學氣相沉積製程。 The process control system of the present invention includes: a machine, a database, a target value prediction unit, an advanced process control (APC) unit, and a manufacturing execution unit. The machine can perform chemical vapor deposition process on multiple wafers in batches. The database is used to store and provide historical information of the machine. The target value predicting unit obtains the target value of the physical properties of the deposited film according to a sensor information from the external environment of the machine and the related table of the database. The advanced process control unit determines the process parameters based on the machine history information from the database, the batch product information, and the target value of the physical property from the target value prediction unit. The manufacturing execution unit drives the machine to perform the chemical vapor deposition process according to the process parameters from the advanced process control unit.

本發明的製程控制方法，適用於對批次的多個晶圓進行化學氣相沉積製程。所述方法包括根據來自機台之外在環境的感測器資訊與資料庫相關表單，來求出沉積膜層的物理性質之目標值，再根據所述機台的歷史資訊、所述批次的產品資訊以及所述物理性質之所述目標值來決定製程參數，然後根據所述製程參數進行化學氣相沉積製程。 The process control method of the present invention is suitable for performing chemical vapor deposition processes on batches of multiple wafers. The method includes obtaining the target value of the physical properties of the deposited film according to the sensor information from the environment outside the machine and the database related table, and then according to the historical information of the machine, the batch The product information and the target value of the physical property determine the process parameters, and then the chemical vapor deposition process is performed according to the process parameters.

在本發明的各個實施例中，上述感測器資訊包括大氣壓力、酸鹼度、溫濕度、含鹽量或震度等外在環境因素。 In various embodiments of the present invention, the above-mentioned sensor information includes external environmental factors such as atmospheric pressure, pH, temperature and humidity, salt content, or vibration.

在本發明的各個實施例中，上述物理性質包括厚度、反射率、折射率(n值)或吸收係數(k值)。 In various embodiments of the present invention, the above-mentioned physical properties include thickness, reflectivity, refractive index (n value), or absorption coefficient (k value).

在本發明的各個實施例中，上述物理性質為厚度時，目標值是由下式(1)所算出：THK(T)=α+x(感測器資訊與資料庫相關表單) (1)式(1)中，α為所述化學氣相沉積製程下，所述沉積膜層的基本厚度值；x為在不同的所述感測器資訊下，所述沉積膜層的厚度調整值。 In each embodiment of the present invention, when the above physical property is thickness, the target value is calculated by the following formula (1): THK(T)=α+x (sensor information and database related table) (1) In formula (1), α is the basic thickness value of the deposited film under the chemical vapor deposition process; x is the adjusted value of the thickness of the deposited film under different sensor information.

在本發明的各個實施例中，上述製程參數與上述感測器資訊不相同。 In various embodiments of the present invention, the aforementioned process parameters are different from the aforementioned sensor information.

在本發明的各個實施例中，上述製程參數包括製程時間與製程溫度中的至少一者。 In various embodiments of the present invention, the aforementioned process parameters include at least one of process time and process temperature.

在本發明的各個實施例中，上述物理性質為厚度，則製程時間是由下式(2)所算出：

Figure 107138200-A0305-02-0005-2
式(2)中，timet為第t個批次的沉積時間，timet-i為第(t-i)個批次的 沉積時間，
Figure 107138200-A0305-02-0005-10
為第t-i個批次沉積時間調整權重，Tp為第 t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0005-11
為第(t-i)個批次的沉積厚度，
Figure 107138200-A0305-02-0005-12
為負載效應，感測器資訊
Figure 107138200-A0305-02-0006-13
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0006-14
為機台各參數對膜厚之影響效應，D.R.為前n批次中間位置的沉積速率的平均值。 In each embodiment of the present invention, the above physical property is thickness, and the process time is calculated by the following formula (2):
Figure 107138200-A0305-02-0005-2
 In formula (2), time t is the deposition time of the t-th batch, and time ti is the deposition time of the (ti)-th batch,
Figure 107138200-A0305-02-0005-10
Adjust the weight for the deposition time of the ti batch, T p is the target value of the thickness of the ti batch,
Figure 107138200-A0305-02-0005-11
Is the deposition thickness of the (ti) batch,
Figure 107138200-A0305-02-0005-12
For load effect, sensor information
Figure 107138200-A0305-02-0006-13
Is the target value of the physical property,
Figure 107138200-A0305-02-0006-14
It is the effect of the various parameters of the machine on the film thickness, and DR is the average value of the deposition rate in the middle of the first n batches.

在本發明的各個實施例中，上述物理性質為厚度，則製程溫度是由下式(3)所算出：

Figure 107138200-A0305-02-0006-3
式(3)中，tempt為第t個批次的沉積溫度，tempt-i為第(t-i)個批次的沉積溫度，
Figure 107138200-A0305-02-0006-53
為第t-i個批次沉積時間調整權重，Tp為 第t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0006-15
為第(t-i)個批次的沉積厚度，
Figure 107138200-A0305-02-0006-18
為負載效應，感測器資訊
Figure 107138200-A0305-02-0006-16
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0006-20
為機台各參數對膜厚之影響效應，T.A.Slot為溫度調整值，D.R.為前n批次中間位置的沉積速率的平均值。 In each embodiment of the present invention, the above physical property is thickness, and the process temperature is calculated by the following formula (3):
Figure 107138200-A0305-02-0006-3
 In formula (3), temp t is the deposition temperature of the t-th batch, and temp ti is the deposition temperature of the (ti)-th batch,
Figure 107138200-A0305-02-0006-53
Adjust the weight for the ti-th batch deposition time, T p is the target value of the ti-th batch thickness,
Figure 107138200-A0305-02-0006-15
Is the deposition thickness of the (ti) batch,
Figure 107138200-A0305-02-0006-18
For load effect, sensor information
Figure 107138200-A0305-02-0006-16
Is the target value of the physical property,
Figure 107138200-A0305-02-0006-20
It is the effect of the various parameters of the machine on the film thickness. TA Slot is the temperature adjustment value, and DR is the average value of the deposition rate in the middle of the previous n batches.

在本發明的各個實施例中，上述機台包括常壓化學氣相沉積機台或低壓化學氣相沉積機台。 In various embodiments of the present invention, the above-mentioned machine includes a normal pressure chemical vapor deposition machine or a low pressure chemical vapor deposition machine.

在本發明的各個實施例中，上述批次的產品資訊包括產品片數和產品特徵值。 In various embodiments of the present invention, the product information of the batch includes the number of product pieces and product characteristic values.

在本發明的各個實施例中，上述機台的歷史資訊包括歷 史的沉積時間、沉積溫度、沉積厚度、沉積速率等。 In the various embodiments of the present invention, the historical information of the aforementioned machine includes History of deposition time, deposition temperature, deposition thickness, deposition rate, etc.

基於上述，本發明可藉由來自機台之外在環境的感測器資訊與資料庫相關表單，先求出沉積膜層的物理性質之目標值(例如，厚度、反射率、n值、k值等)，再搭配機台的歷史資訊與批次的產品資訊來取得最佳的製程參數，以減小上述外在環境中不可控的因子(例如，大氣壓力、酸鹼度、溫濕度、含鹽量、震度等)對化學氣相沉積製程所造成的影響。因此，本發明的方法與系統可以有效地降低產品受外在環境的變異量、提高製程精確度，進而提高良率與產量。 Based on the above, the present invention can first obtain the target value of the physical properties of the deposited film (for example, thickness, reflectivity, n value, k Value, etc.), combined with historical information of the machine and batch product information to obtain the best process parameters to reduce the uncontrollable factors in the external environment (for example, atmospheric pressure, pH, temperature and humidity, salt The impact on the chemical vapor deposition process. Therefore, the method and system of the present invention can effectively reduce the variation of the product from the external environment, improve the accuracy of the manufacturing process, and thereby increase the yield and output.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

100:製程控制系統 100: Process control system

101:晶圓 101: Wafer

102:機台 102: Machine

104:資料庫 104: database

106:目標值預測單元 106: Target value prediction unit

108:先進製程控制單元 108: Advanced Process Control Unit

110:製造執行單元 110: Manufacturing Execution Unit

S200、S202、S204、S300、S302、S400、S402、S404、S406、S408、S410:步驟 S200, S202, S204, S300, S302, S400, S402, S404, S406, S408, S410: steps

圖1是依照本發明的第一實施例的一種製程控制系統的方塊圖。 Fig. 1 is a block diagram of a process control system according to a first embodiment of the present invention.

圖2是依照本發明的第二實施例的一種製程控制方法的步驟圖。 2 is a step diagram of a process control method according to the second embodiment of the present invention.

圖3是本發明的實施例中的目標值預測單元的分析步驟簡圖。 Fig. 3 is a simplified diagram of the analysis steps of the target value prediction unit in the embodiment of the present invention.

圖4是本發明的實施例中的先進製程控制單元的分析步驟簡圖。 4 is a simplified diagram of the analysis steps of the advanced process control unit in the embodiment of the present invention.

圖1是依照本發明的第一實施例的一種製程控制系統的方塊圖。 Fig. 1 is a block diagram of a process control system according to a first embodiment of the present invention.

請參照圖1，本實施例的製程控制系統100基本包括機台102、資料庫104、目標值預測單元106、先進製程控制(APC)單元108以及製造執行單元110。 1, the process control system 100 of this embodiment basically includes a machine 102, a database 104, a target value prediction unit 106, an advanced process control (APC) unit 108, and a manufacturing execution unit 110.

機台102可接收製造執行單元110所設定的製程參數，來對批次的多個晶圓101進行化學氣相沉積製程，並且於該次製程結束後將相關資訊傳送至資料庫104。所述機台102可為常壓化學氣相沉積(Atmospheric Pressure CVD)機台或低壓化學氣相沉積(Low-Pressure CVD)機台。 The machine 102 can receive the process parameters set by the manufacturing execution unit 110 to perform a chemical vapor deposition process on a plurality of wafers 101 in a batch, and send relevant information to the database 104 after the process is completed. The machine 102 can be an Atmospheric Pressure CVD machine or a Low-Pressure CVD machine.

資料庫104則用於儲存並提供所述機台102的歷史資訊，例如儲存來自機台102的歷史資訊例如歷史的沉積時間、沉積溫度、沉積厚度、沉積速率等，並將這些歷史資訊提供給先進製程控制單元108或目標值預測單元106，以供運算使用。 The database 104 is used to store and provide historical information of the machine 102, for example, to store historical information from the machine 102 such as historical deposition time, deposition temperature, deposition thickness, deposition rate, etc., and provide these historical information to The advanced process control unit 108 or the target value prediction unit 106 is used for calculation.

而目標值預測單元106根據來自機台102之外在環境的一感測器資訊與資料庫相關表單，求出沉積膜層的物理性質之目標值。舉例來說，外在環境中有許多屬於不可控的因子，例如天氣變異與自然災害等，會直接或間接地影響機台102內所進行的製程。因此藉由相應的感測器取得的感測器資訊(例如，大氣壓力、酸鹼度、溫濕度、含鹽量或震度)，反饋至目標值預測單元106 並根據資料庫104提供的相關表單來建立目標值。所述目標值是指沉積膜層在受到上述不可控的因子影響之下，其物理性質改變的數值。舉例來說，颱風會使外在環境的大氣壓力降低，而導致常壓化學氣相沉積的膜層厚度變薄，因此目標值即為厚度的變化值。在此情況下，目標值預測單元106可根據感測器資訊(如外在環境的大氣壓力值)，對照資料庫104提供的相關表單，採用迴歸分析方法或其它適合的方式建立沉積膜層的厚度與大氣壓力值之關係，以提供給先進製程控制單元108進行分析。上述沉積膜層的物理性質除了厚度之外，還可以是反射率、折射率(n值)、吸收係數(k值)等。 The target value predicting unit 106 obtains the target value of the physical properties of the deposited film according to a sensor information from the environment outside the machine 102 and a database related table. For example, there are many uncontrollable factors in the external environment, such as weather variation and natural disasters, which directly or indirectly affect the manufacturing process performed in the machine 102. Therefore, the sensor information (for example, atmospheric pressure, pH, temperature and humidity, salt content, or seismic intensity) obtained by the corresponding sensor is fed back to the target value prediction unit 106 The target value is established according to the relevant form provided by the database 104. The target value refers to the value at which the physical properties of the deposited film change under the influence of the aforementioned uncontrollable factors. For example, a typhoon will reduce the atmospheric pressure of the external environment and cause the film thickness of atmospheric chemical vapor deposition to become thinner. Therefore, the target value is the thickness change value. In this case, the target value predicting unit 106 can use the sensor information (such as the atmospheric pressure value of the external environment) to compare the relevant table provided by the database 104, and use a regression analysis method or other suitable methods to establish the deposition film. The relationship between the thickness and the atmospheric pressure value is provided to the advanced process control unit 108 for analysis. In addition to the thickness, the physical properties of the above-mentioned deposited film layer may also be reflectance, refractive index (n value), absorption coefficient (k value), and the like.

先進製程控制單元108根據來自資料庫104的機台的歷史資訊、批次的產品資訊以及來自目標值預測單元106的物理性質之目標值，能決定適當的製程參數，並將此製程參數傳送至製造執行單元110。在本實施例中，製程參數與上述感測器資訊不相同；譬如感測器資訊是大氣壓力值，則製程參數可能是製程時間與製程溫度，用以微調沉積膜層的厚度，但本發明並不限於此。 The advanced process control unit 108 can determine the appropriate process parameters based on the historical information of the machines from the database 104, the batch product information, and the target value of the physical properties from the target value prediction unit 106, and send the process parameters to Manufacture execution unit 110. In this embodiment, the process parameters are different from the above-mentioned sensor information; for example, if the sensor information is atmospheric pressure, the process parameters may be process time and process temperature to fine-tune the thickness of the deposited film. However, the present invention Not limited to this.

製造執行單元110則根據來自先進製程控制單元108的所述製程參數，驅動機台102進行晶圓的化學氣相沉積製程。 The manufacturing execution unit 110 drives the machine 102 to perform the chemical vapor deposition process of the wafer according to the process parameters from the advanced process control unit 108.

圖2是依照本發明的第二實施例的一種製程控制方法的步驟圖。 2 is a step diagram of a process control method according to the second embodiment of the present invention.

在圖2中，先進行步驟S200，根據來自機台之外在環境的感測器資訊與資料庫相關表單來求出沉積膜層的物理性質之目 標值。而且，步驟S200可利用圖1的系統中的目標值預測單元106執行。 In FIG. 2, step S200 is performed first, and the physical properties of the deposited film are obtained according to the sensor information from the external environment of the machine and the database related tables. Marked value. Moreover, step S200 can be performed by using the target value prediction unit 106 in the system of FIG. 1.

以下說明目標值預測單元106的分析流程，請參照圖3。在圖3中，先進行步驟S300，收集機台的歷史資訊及所有批次的產品資訊，其中所述歷史資訊例如歷史的沉積時間、沉積溫度、沉積厚度、沉積速率等；批次的產品資訊例如產品片數、產品特徵值等。然後，在步驟S302中，以迴歸分析的方法建立沉積膜層的物理性質與外在環境的感測器資訊之關係，其中沉積膜層的物理性質例如厚度、反射率、n值、k值等；感測器資訊例如大氣壓力、酸鹼度、溫濕度、含鹽量、震度等外在環境因素。 The following describes the analysis flow of the target value prediction unit 106, please refer to FIG. 3. In FIG. 3, step S300 is first performed to collect historical information of the machine and product information of all batches, where the historical information such as historical deposition time, deposition temperature, deposition thickness, deposition rate, etc.; batch product information For example, the number of product pieces, product feature values, etc. Then, in step S302, a regression analysis method is used to establish the relationship between the physical properties of the deposited film and the sensor information of the external environment, where the physical properties of the deposited film such as thickness, reflectivity, n value, k value, etc. ; Sensor information, such as external environmental factors such as atmospheric pressure, pH, temperature and humidity, salt content, and vibration.

在一實施例中，步驟S200的目標值在物理性質為厚度時，可由下式(1)所算出：THK(T)=α+x(感測器資訊與資料庫相關表單) (1)式(1)中，α為所述化學氣相沉積製程下，沉積膜層的基本厚度值；x為在不同的感測器資訊下，所述沉積膜層的厚度調整值。 In one embodiment, when the physical property of the target value of step S200 is thickness, it can be calculated by the following formula (1): THK(T)=α+x (sensor information and database related table) (1) In (1), α is the basic thickness value of the deposited film under the chemical vapor deposition process; x is the adjusted value of the thickness of the deposited film under different sensor information.

然後，如圖2所示，進行步驟S202，根據機台的歷史資訊、批次的產品資訊以及步驟S200所得的物理性質之目標值來決定製程參數。而且，步驟S202可利用圖1的系統中的先進製程控制單元108執行。 Then, as shown in FIG. 2, step S202 is performed, and the process parameters are determined according to the historical information of the machine, the product information of the batch, and the target value of the physical property obtained in step S200. Moreover, step S202 can be executed by the advanced process control unit 108 in the system of FIG. 1.

以下說明先進製程控制單元108的分析流程，請參照圖4。在步驟S400中，接收以下資訊：1.批次的產品資訊、2.機台的歷史資訊、3.目標值預測單元所算出的沉積膜層的物理性質之目 標值(如步驟S200)。然後，可區分為前饋控制(步驟S402及步驟S404)與回饋控制(步驟S406及步驟S408)。所述的前饋控制為收集此批次的產品片數、產品特徵值等，如負載效應(loading effect)(步驟S402)，並依據沉積膜層的物理性質之目標值，求出需補償的製程參數(步驟S404)。其中，在步驟S404中的製程參數例如製程時間或製程溫度或者製程時間與製程溫度，但本發明並不限於此，凡是能於製程期間調控沉積膜層的物理性質的參數皆能用於本發明。 The following describes the analysis flow of the advanced process control unit 108, please refer to FIG. 4. In step S400, the following information is received: 1. Batch product information, 2. Machine history information, 3. Target value prediction unit calculated by the target value prediction unit of the physical properties of the deposited film Mark value (as in step S200). Then, it can be divided into feedforward control (step S402 and step S404) and feedback control (step S406 and step S408). The feed-forward control is to collect the number of product pieces, product characteristic values, etc. of this batch, such as loading effect (step S402), and calculate the value to be compensated based on the target value of the physical properties of the deposited film Process parameters (step S404). Among them, the process parameters in step S404 such as process time or process temperature or process time and process temperature, but the present invention is not limited to this, any parameter that can control the physical properties of the deposited film during the process can be used in the present invention .

所述的回饋控制部分則先接收機台之前生產過的資訊(即機台的歷史資訊)(步驟S406)，再依據機台之前的生產結果，求出所需微調的製程參數(步驟S408)。因此，在步驟S410中，結合以上的前饋控制與回饋控制的數值取得最佳的製程參數。 The feedback control part first receives the information previously produced by the station (ie the historical information of the machine) (step S406), and then calculates the required fine-tuning process parameters based on the previous production results of the machine (step S408) . Therefore, in step S410, the above feedforward control and feedback control values are combined to obtain the best process parameters.

在一實施例中，若是物理性質為厚度，則先進製程控制單元108於步驟S404中對於製程時間的計算如下式(2)所示：

Figure 107138200-A0305-02-0011-4
式(2)中，timet為第t個批次的沉積時間，timet-i為第(t-i)個批次的沉積時間，
Figure 107138200-A0305-02-0011-54
為第t-i個批次沉積時間調整權重，Tp為第 t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0011-22
為第(t-i)個批次的沉積厚度，
Figure 107138200-A0305-02-0011-23
為負載效應，感測器資訊
Figure 107138200-A0305-02-0012-25
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0012-27
為機台各參數對膜厚之影響效應，D.R.為前n批次中間位置的沉積速率的平均值。也就是說，如果感測器資訊是大氣壓力值，則 感測器資訊
Figure 107138200-A0305-02-0012-28
為大氣壓力效應(Atmospheric pressure effect)影響 所述物理性質而導致之目標值。 In one embodiment, if the physical property is thickness, the advanced process control unit 108 calculates the process time in step S404 as shown in the following formula (2):
Figure 107138200-A0305-02-0011-4
 In formula (2), time t is the deposition time of the t-th batch, and time ti is the deposition time of the (ti)-th batch,
Figure 107138200-A0305-02-0011-54
Adjust the weight for the ti-th batch deposition time, T p is the target value of the ti-th batch thickness,
Figure 107138200-A0305-02-0011-22
Is the deposition thickness of the (ti) batch,
Figure 107138200-A0305-02-0011-23
For load effect, sensor information
Figure 107138200-A0305-02-0012-25
Is the target value of the physical property,
Figure 107138200-A0305-02-0012-27
It is the effect of the various parameters of the machine on the film thickness, and DR is the average value of the deposition rate in the middle of the first n batches. In other words, if the sensor information is the atmospheric pressure value, the sensor information
Figure 107138200-A0305-02-0012-28
It is the target value caused by the Atmospheric pressure effect affecting the physical properties.

在一實施例中，若是物理性質為厚度，則先進製程控制單元108於步驟S404中對於製程溫度的計算如下式(3)所示：

Figure 107138200-A0305-02-0012-6
式(3)中，tempt為第t個批次的沉積溫度，tempt-i為第(t-i)個批次的沉積溫度，
Figure 107138200-A0305-02-0012-55
為第t-i個批次沉積時間調整權重，Tp為 第t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0012-29
為第(t-i)個批次的沉積厚度
Figure 107138200-A0305-02-0012-33
為負載效應，感測器資訊
Figure 107138200-A0305-02-0012-31
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0012-32
為機台各參數對膜厚之影響效應，T.A.Slot為溫度調整值，D.R. 為前n批次中間位置的沉積速率的平均值。 In one embodiment, if the physical property is thickness, the advanced process control unit 108 calculates the process temperature in step S404 as shown in the following formula (3):
Figure 107138200-A0305-02-0012-6
 In formula (3), temp t is the deposition temperature of the t-th batch, and temp ti is the deposition temperature of the (ti)-th batch,
Figure 107138200-A0305-02-0012-55
Adjust the weight for the ti-th batch deposition time, T p is the target value of the ti-th batch thickness,
Figure 107138200-A0305-02-0012-29
Is the deposition thickness of the (ti) batch
Figure 107138200-A0305-02-0012-33
For load effect, sensor information
Figure 107138200-A0305-02-0012-31
Is the target value of the physical property,
Figure 107138200-A0305-02-0012-32
It is the effect of the various parameters of the machine on the film thickness. TA Slot is the temperature adjustment value, and DR is the average value of the deposition rate in the middle of the previous n batches.

之後，請再次參照圖2，進行步驟S204，根據步驟S202所取得的製程參數進行化學氣相沉積製程。而且，步驟S204可利用圖1的系統中的製造執行單元110執行。 After that, please refer to FIG. 2 again to perform step S204, and perform the chemical vapor deposition process according to the process parameters obtained in step S202. Moreover, step S204 may be executed by the manufacturing execution unit 110 in the system of FIG. 1.

綜上所述，針對外在環境中不可控的因子，例如天氣變 異與自然災害等所造成的大氣壓力、酸鹼度、溫濕度、含鹽量、震度等變化，本發明提供一種控制系統與方法來取得相應的製程參數，以減小上述外在環境中不可控因子對於化學氣相沉積製程所造成的影響，並藉此提高製程精確度，以提高良率與產量。 In summary, for the uncontrollable factors in the external environment, such as weather Changes in atmospheric pressure, pH, temperature and humidity, salinity, earthquake intensity, etc. caused by different and natural disasters. The present invention provides a control system and method to obtain corresponding process parameters to reduce the above-mentioned uncontrollable factors in the external environment For the impact of the chemical vapor deposition process, and to improve the accuracy of the process to improve the yield and yield.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100:製程控制系統 100: Process control system

101:晶圓 101: Wafer

102:機台 102: Machine

104:資料庫 104: database

106:目標值預測單元 106: Target value prediction unit

108:先進製程控制單元 108: Advanced Process Control Unit

110:製造執行單元 110: Manufacturing Execution Unit

Claims (18)

一種製程控制系統，包括：機台，對批次的多個晶圓進行化學氣相沉積製程；資料庫，用於儲存並提供所述機台的歷史資訊；目標值預測單元，根據來自所述機台之外在環境的感測器資訊與資料庫相關表單來求出沉積膜層的物理性質之目標值，且所述目標值為所述沉積膜層受到所述機台之外在環境影響下所述物理性質改變的數值，其中所述感測器資訊包括大氣壓力、酸鹼度、溫濕度、含鹽量或震度；先進製程控制單元，根據來自所述資料庫的所述機台的歷史資訊、所述批次的產品資訊以及來自所述目標值預測單元的所述物理性質之所述目標值來決定製程參數，其中所述物理性質為厚度時，所述目標值是由式(1)所算出：THK(T)=α+x(感測器資訊與資料庫相關表單) (1)式(1)中，α為所述化學氣相沉積製程下，所述沉積膜層的基本厚度值；x為在不同的所述機台之外在環境的所述感測器資訊下，所述沉積膜層的厚度調整值；以及製造執行單元，根據來自所述先進製程控制單元的所述製程參數，驅動所述機台進行所述化學氣相沉積製程。 A process control system includes: a machine for performing a chemical vapor deposition process on multiple wafers in batches; a database for storing and providing historical information of the machine; a target value prediction unit based on the The sensor information of the environment outside the machine and the database related tables are used to obtain the target value of the physical properties of the deposited film, and the target value is that the deposited film is affected by the environment outside the machine The value of the physical property change described below, wherein the sensor information includes atmospheric pressure, pH, temperature and humidity, salt content, or vibration; the advanced process control unit is based on the historical information of the machine from the database , The product information of the batch and the target value of the physical property from the target value prediction unit to determine the process parameter. When the physical property is thickness, the target value is determined by formula (1) Calculated: THK(T) = α + x (sensor information and database related tables) (1) In formula (1), α is the basic thickness of the deposited film under the chemical vapor deposition process Value; x is the adjusted value of the thickness of the deposited film under the sensor information of the environment outside of the different machine; and the manufacturing execution unit, according to the advanced process control unit The process parameters drive the machine to perform the chemical vapor deposition process. 如申請專利範圍第1項所述的製程控制系統，其中所述物理性質包括厚度、反射率、折射率或吸收係數。 The process control system according to the first item of the scope of patent application, wherein the physical properties include thickness, reflectivity, refractive index or absorption coefficient. 如申請專利範圍第1項所述的製程控制系統，其中所述製程參數與所述感測器資訊不相同。 The process control system described in the first item of the scope of patent application, wherein the process parameters are different from the sensor information. 如申請專利範圍第3項所述的製程控制系統，其中所述製程參數包括製程時間與製程溫度中的至少一者。 The process control system according to claim 3, wherein the process parameters include at least one of process time and process temperature. 如申請專利範圍第4項所述的製程控制系統，其中所述物理性質為厚度，所述製程時間是由下式(2)所算出：
Figure 107138200-A0305-02-0015-7
 式(2)中，timet為第t個批次的沉積時間，timet-i為第(t-i)個批次的沉積時間，
Figure 107138200-A0305-02-0015-56
為第t-i個批次沉積時間調整權重，Tp為第 t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0015-34
為第(t-i)個批次的沉積厚度，
Figure 107138200-A0305-02-0015-36
為 負載效應，感測器資訊
Figure 107138200-A0305-02-0015-35
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0015-37
為 機台各參數對膜厚之影響效應，D.R.為前n批次中間位置的沉積速率的平均值。 The process control system described in item 4 of the scope of patent application, wherein the physical property is thickness, and the process time is calculated by the following formula (2):
Figure 107138200-A0305-02-0015-7
 In formula (2), time t is the deposition time of the t-th batch, and time ti is the deposition time of the (ti)-th batch,
Figure 107138200-A0305-02-0015-56
Adjust the weight for the ti-th batch deposition time, T p is the target value of the ti-th batch thickness,
Figure 107138200-A0305-02-0015-34
Is the deposition thickness of the (ti) batch,
Figure 107138200-A0305-02-0015-36
For load effect, sensor information
Figure 107138200-A0305-02-0015-35
Is the target value of the physical property,
Figure 107138200-A0305-02-0015-37
It is the effect of the various parameters of the machine on the film thickness, and DR is the average value of the deposition rate in the middle of the first n batches. 如申請專利範圍第4項所述的製程控制系統，其中所述物理性質為厚度，所述製程溫度是由下式(3)所算出：
Figure 107138200-A0305-02-0015-8
 式(3)中，tempt為第t個批次的沉積溫度，tempt-i為第(t-i)個批次的沉積溫度，
Figure 107138200-A0305-02-0016-57
為第t-i個批次沉積時間調整權重，Tp為第 t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0016-38
為第(t-i)個批次的沉積厚度，
Figure 107138200-A0305-02-0016-40
為 負載效應，感測器資訊
Figure 107138200-A0305-02-0016-39
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0016-41
為 機台各參數對膜厚之影響效應，T.A.Slot為溫度調整值，D.R.為前n批次中間位置的沉積速率的平均值。 The process control system described in item 4 of the scope of patent application, wherein the physical property is thickness, and the process temperature is calculated by the following formula (3):
Figure 107138200-A0305-02-0015-8
 In formula (3), temp t is the deposition temperature of the t-th batch, and temp ti is the deposition temperature of the (ti)-th batch,
Figure 107138200-A0305-02-0016-57
Adjust the weight for the tith batch deposition time, Tp is the target value of the tith batch thickness,
Figure 107138200-A0305-02-0016-38
Is the deposition thickness of the (ti) batch,
Figure 107138200-A0305-02-0016-40
For load effect, sensor information
Figure 107138200-A0305-02-0016-39
Is the target value of the physical property,
Figure 107138200-A0305-02-0016-41
It is the effect of the various parameters of the machine on the film thickness. TA Slot is the temperature adjustment value, and DR is the average value of the deposition rate in the middle of the previous n batches. 如申請專利範圍第1項所述的製程控制系統，其中所述機台包括常壓化學氣相沉積機台或低壓化學氣相沉積機台。 According to the process control system described in item 1 of the scope of patent application, the machine includes a normal pressure chemical vapor deposition machine or a low pressure chemical vapor deposition machine. 如申請專利範圍第1項所述的製程控制系統，其中所述批次的產品資訊包括產品片數和產品特徵值。 For the process control system described in item 1 of the scope of patent application, the product information of the batch includes the number of product pieces and product characteristic values. 如申請專利範圍第1項所述的製程控制系統，其中所述機台的歷史資訊包括歷史的沉積時間、沉積溫度、沉積厚度與沉積速率。 The process control system described in the first item of the patent application, wherein the historical information of the machine includes historical deposition time, deposition temperature, deposition thickness, and deposition rate. 一種製程控制方法，適用於對批次的多個晶圓進行化學氣相沉積製程，所述方法包括：根據來自機台之外在環境的感測器資訊與資料庫相關表單來求出沉積膜層的物理性質之目標值，且所述目標值為所述沉積膜層受到所述機台之外在環境影響下所述物理性質改變的數值，其中所述感測器資訊包括大氣壓力、酸鹼度、溫濕度、含鹽量或震度；根據所述機台的歷史資訊、所述批次的產品資訊以及所述物理性質之所述目標值來決定製程參數，其中所述物理性質為厚度 時，所述目標值是由式(1)所算出：THK(T)=α+x(感測器資訊與資料庫相關表單) (1)式(1)中，α為所述化學氣相沉積製程下，所述沉積膜層的基本厚度值；x為在不同的所述機台之外在環境的所述感測器資訊下，所述沉積膜層的厚度調整值；以及根據所述製程參數進行所述化學氣相沉積製程。 A process control method, which is suitable for performing a chemical vapor deposition process on a batch of multiple wafers. The method includes: obtaining a deposited film based on sensor information from an environment outside the machine and a database related form The target value of the physical properties of the layer, and the target value is the value of the change of the physical properties of the deposited film layer under the influence of the environment outside the machine, wherein the sensor information includes atmospheric pressure, pH , Temperature and humidity, salt content or seismic intensity; the process parameters are determined according to the historical information of the machine, the product information of the batch, and the target value of the physical property. When the physical property is thickness, The target value is calculated by formula (1): THK(T) = α + x (sensor information and database related table) (1) In formula (1), α is the chemical vapor deposition process Below, the basic thickness value of the deposited film; x is the adjusted value of the thickness of the deposited film under the sensor information of the environment outside of the different machines; and according to the process parameters The chemical vapor deposition process is performed. 如申請專利範圍第10項所述的製程控制方法，其中所述物理性質包括厚度、反射率、折射率或吸收係數。 The process control method according to the 10th patent application, wherein the physical properties include thickness, reflectivity, refractive index, or absorption coefficient. 如申請專利範圍第10項所述的製程控制方法，其中所述製程參數與所述感測器資訊不相同。 According to the process control method described in claim 10, the process parameters are different from the sensor information. 如申請專利範圍第12項所述的製程控制方法，其中所述製程參數包括製程時間與製程溫度中的至少一者。 The process control method according to claim 12, wherein the process parameter includes at least one of process time and process temperature. 如申請專利範圍第13項所述的製程控制方法，其中當所述物理性質為厚度，在決定所述製程參數的步驟中，由下式(2)算出所述製程時間：
Figure 107138200-A0305-02-0017-42
 式(2)中，timet為第t個批次的沉積時間，timet-i為第(t-i)個批次的沉積時間，
Figure 107138200-A0305-02-0017-58
為第t-i個批次沉積時間調整權重，Tp為第 t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0017-43
為第(t-i)個批次的沉積厚度，
Figure 107138200-A0305-02-0017-44
為 負載效應，感測器資訊
Figure 107138200-A0305-02-0018-45
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0018-46
為機台各參數對膜厚之影響效應，D.R.為前n吡次中間位置的沉積速率的平均值。 The process control method described in item 13 of the scope of patent application, wherein when the physical property is thickness, in the step of determining the process parameters, the process time is calculated by the following formula (2):
Figure 107138200-A0305-02-0017-42
 In formula (2), time t is the deposition time of the t-th batch, and time ti is the deposition time of the (ti)-th batch,
Figure 107138200-A0305-02-0017-58
Adjust the weight for the ti-th batch deposition time, T p is the target value of the ti-th batch thickness,
Figure 107138200-A0305-02-0017-43
Is the deposition thickness of the (ti) batch,
Figure 107138200-A0305-02-0017-44
For load effect, sensor information
Figure 107138200-A0305-02-0018-45
Is the target value of the physical property,
Figure 107138200-A0305-02-0018-46
It is the effect of the various parameters of the machine on the film thickness, and DR is the average value of the deposition rate at the middle position of the previous n times. 如申請專利範圍第13項所述的製程控制方法，其中當所述物理性質為厚度，在決定所述製程參數的步驟中，由下式(3)算出所述製程溫度：
Figure 107138200-A0305-02-0018-9
 式(3)中，tempt為第t個批次的沉積溫度，tempt-i為第(t-i)個批次的沉積溫度，
Figure 107138200-A0305-02-0018-59
為第t-i個批次沉積時間調整權重，Tp為第 t-i個批次厚度的目標值，
Figure 107138200-A0305-02-0018-47
為第(t-i)個批次的沉積厚度，
Figure 107138200-A0305-02-0018-50
為 負載效應，感測器資訊
Figure 107138200-A0305-02-0018-49
為所述物理性質之所述目標值，
Figure 107138200-A0305-02-0018-51
為 機台各參數對膜厚之影響效應，T.A.Slot為溫度調整值，D.R.為前n批次中間位置的沉積速率的平均值。 The process control method according to item 13 of the scope of patent application, wherein when the physical property is thickness, in the step of determining the process parameters, the process temperature is calculated by the following formula (3):
Figure 107138200-A0305-02-0018-9
 In formula (3), temp t is the deposition temperature of the t-th batch, and temp ti is the deposition temperature of the (ti)-th batch,
Figure 107138200-A0305-02-0018-59
Adjust the weight for the ti-th batch deposition time, T p is the target value of the ti-th batch thickness,
Figure 107138200-A0305-02-0018-47
Is the deposition thickness of the (ti) batch,
Figure 107138200-A0305-02-0018-50
For load effect, sensor information
Figure 107138200-A0305-02-0018-49
Is the target value of the physical property,
Figure 107138200-A0305-02-0018-51
It is the effect of the various parameters of the machine on the film thickness. TA Slot is the temperature adjustment value, and DR is the average value of the deposition rate in the middle of the previous n batches. 如申請專利範圍第10項所述的製程控制方法，其中所述機台包括常壓化學氣相沉積機台或低壓化學氣相沉積機台。 According to the process control method described in item 10 of the scope of patent application, the machine includes a normal pressure chemical vapor deposition machine or a low pressure chemical vapor deposition machine. 如申請專利範圍第10項所述的製程控制方法，其中所述批次的產品資訊包括產品片數和產品特徵值。 The process control method described in item 10 of the scope of patent application, wherein the product information of the batch includes the number of product pieces and product characteristic values. 如申請專利範圍第10項所述的製程控制方法，其中所述機台的歷史資訊包括歷史的沉積時間、沉積溫度、沉積厚度與沉積速率。 According to the process control method described in claim 10, the historical information of the machine includes historical deposition time, deposition temperature, deposition thickness, and deposition rate.
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