TWI712937B - Capacitance detection circuit and operation method the same - Google Patents
Capacitance detection circuit and operation method the same Download PDFInfo
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本發明涉及一種電容偵測電路及其運作方法,且特別涉及一種能整合於單一晶片又達到較高偵測分辨率的電容偵測電路及其運作方法。The invention relates to a capacitance detection circuit and an operation method thereof, and more particularly to a capacitance detection circuit and an operation method thereof that can be integrated into a single chip and achieve higher detection resolution.
電容式觸控已成為現今產品的必要功能,而且電容式觸控裝置為利用電容偵測電路來偵測作為按鍵的導體(例如,銅片)與使用者手指間所形成的手指電容。舉例來說,請參閱圖1,圖1是習知電容偵測電路的示意圖。電容偵測電路10可整合於單一晶片中,且其耦接一個微控制器(圖1未示)和至少一個被用來實現作為按鍵的導體,並外掛一個儲存電容Cs。為了方便以下說明,圖1的電容偵測電路10僅採用耦接一個導體12的例子,且電容偵測電路10包括開關SW1、開關SW2、開關SW3及電壓偵測器101。Capacitive touch has become a necessary function of today's products, and the capacitive touch device uses a capacitance detection circuit to detect the finger capacitance formed between the conductor (for example, copper sheet) used as the button and the user's finger. For example, please refer to FIG. 1, which is a schematic diagram of a conventional capacitance detection circuit. The
仔細地說,電容偵測電路10是通過節點A耦接導體12,且開關SW1耦接於節點A及儲存電容Cs間。開關SW2耦接於節點A及電源電壓VDD間,開關SW3則耦接於接地電壓GND及儲存電容Cs間,且開關SW3和開關SW1共同通過節點B耦接儲存電容Cs的第一端,儲存電容Cs的第二端則耦接接地電壓GND。另外,電壓偵測器101是由一比較器CP所實現,且比較器CP的正相輸入端也耦接於節點B,反相輸入端則接收參考電壓Vref。Specifically, the
如圖1所示,晶片外的感應電容除了手指電容Cf,還有一個主要來自於印刷電路板(Printed Circuit Board,PCB)上的寄生電容Cd,且電容偵測電路10的運作方法是先導通開關SW3,使得提供一條放電路徑將儲存電容Cs的電壓Vcs放電至為零的接地電壓GND。其次,截止開關SW3並導通開關SW2,使得提供一條充電路徑將寄生電容Cd和手指電容Cf的電壓Vdf充電至電源電壓VDD。As shown in Figure 1, in addition to the finger capacitance Cf, the inductive capacitance outside the chip also has a parasitic capacitance Cd mainly derived from the Printed Circuit Board (PCB), and the operation method of the
接著,截止開關SW2並導通開關SW1,使得提供一條電荷轉移路徑將寄生電容Cd和手指電容Cf所儲存的電荷轉移至儲存電容Cs,並再重複地對寄生電容Cd和手指電容Cf進行充電,以及將其所儲存的電荷轉移至儲存電容Cs,或者是說循環地導通開關SW2和開關SW1,直到儲存電容Cs的電壓Vcs達到參考電壓Vref。在此過程中,如果寄生電容Cd和手指電容Cf越大的話,則每次導通開關SW1時所轉移至儲存電容Cs的電荷就越多,且需要導通開關SW2和開關SW1的循環次數就越少。Next, switch SW2 is turned off and switch SW1 is turned on, so as to provide a charge transfer path to transfer the charge stored in parasitic capacitance Cd and finger capacitance Cf to storage capacitance Cs, and then repeatedly charge parasitic capacitance Cd and finger capacitance Cf, and The stored charge is transferred to the storage capacitor Cs, or the switch SW2 and the switch SW1 are turned on cyclically, until the voltage Vcs of the storage capacitor Cs reaches the reference voltage Vref. In this process, if the parasitic capacitance Cd and the finger capacitance Cf are larger, the more charge is transferred to the storage capacitor Cs each time the switch SW1 is turned on, and the number of cycles required to turn on the switch SW2 and SW1 is less .
然而,因為手指11沒有按壓導體12時的手指電容Cf為零,但有按壓導體12時的手指電容Cf約為0.5pF,使得微控制器可根據導通開關SW2和開關SW1的循環次數來判斷手指11是否有按壓導體12。也就是說,如果寄生電容Cd的電容值越大的話,電容偵測電路10所能偵測到的手指電容Cf的電容變化量則越少。另外,隨著每個觸控按鍵(即每個導體)的位置不同,PCB走線方式和長度也就不同,而且走線容易受接地端影響,使得寄生電容Cd的電容值在每個觸控按鍵上又都不一致,所以電容式觸控裝置上的PCB設計就變得非常困難。However, because the finger capacitance Cf when the
另一方面,因為儲存電容Cs通常為大於3000pF,以至於其無法和電容偵測電路10整合於單一晶片中,而且除了用來比較電壓Vcs和參考電壓Vref的比較器CP難以實現高分辨率外,儲存電容Cs還因外掛而容易受環境溫濕度的變化影響,造成偵測的誤判。另外,電容式觸控按鍵也容易受外部訊號的干擾,例如射頻干擾、輻射干擾和電源噪聲干擾等。因此,如何設計出一種能整合於單一晶片又達到較高偵測分辨率的電容偵測電路則成為本領域的一項重要課題。On the other hand, because the storage capacitor Cs is usually greater than 3000 pF, it cannot be integrated with the
有鑑於此,本發明實施例提供一種電容偵測電路,耦接一導體,且其包括一儲存電容和一可變電容。所述電容偵測電路用來於自適應電容模式下調整可變電容的電容值,並於觸控按鍵模式下偵測感應電容的電容值變化,以產生有關該導體的觸控值。在自適應電容模式下,所述電容偵測電路用來進行:步驟A,提供第一充電路徑將感應電容的電壓充電至第一電源電壓,並且提供第二充電路徑將儲存電容的電壓充電至第二電源電壓,其中第二電源電壓小於第一電源電壓,且感應電容包括寄生電容和手指電容;步驟B,提供放電路徑將可變電容的電壓放電至接地電壓,並且提供第一電荷轉移路徑將感應電容所儲存的電荷轉移至儲存電容;步驟C,提供第一充電路徑將感應電容的電壓充電至第一電源電壓,並且提供第二電荷轉移路徑將儲存電容所儲存的電荷轉移至可變電容,然後對經電荷轉移至可變電容後的儲存電容的電壓和第二電源電壓進行比較,並且根據比較結果來調整可變電容的該電容值;以及步驟D,重複步驟B和步驟C,直到經電荷轉移至可變電容後的儲存電容的電壓等於第二電源電壓,所述電容偵測電路才完成自適應電容模式。In view of this, an embodiment of the present invention provides a capacitance detection circuit, which is coupled to a conductor and includes a storage capacitor and a variable capacitor. The capacitance detection circuit is used to adjust the capacitance value of the variable capacitor in the adaptive capacitance mode, and to detect the change in the capacitance value of the sensing capacitor in the touch button mode to generate a touch value related to the conductor. In the adaptive capacitance mode, the capacitance detection circuit is used to perform: Step A, providing a first charging path to charge the voltage of the sensing capacitor to the first power supply voltage, and providing a second charging path to charge the voltage of the storage capacitor to The second power supply voltage, wherein the second power supply voltage is less than the first power supply voltage, and the sensing capacitor includes parasitic capacitance and finger capacitance; step B, providing a discharge path to discharge the voltage of the variable capacitor to the ground voltage, and providing a first charge transfer path The charge stored in the sensing capacitor is transferred to the storage capacitor; step C, a first charging path is provided to charge the voltage of the sensing capacitor to the first power supply voltage, and a second charge transfer path is provided to transfer the charge stored in the storage capacitor to the variable And then compare the voltage of the storage capacitor after the charge is transferred to the variable capacitor with the second power supply voltage, and adjust the capacitance value of the variable capacitor according to the comparison result; and step D, repeat step B and step C, The capacitance detection circuit does not complete the adaptive capacitance mode until the voltage of the storage capacitor after the charge is transferred to the variable capacitor is equal to the second power supply voltage.
除此之外,本發明實施例另提供一種用於電容偵測電路的運作方法。所述電容偵測電路具有一自適應電容模式和一觸控按鍵模式,且其包括儲存電容和可變電容。所述運作方法包括如下步驟。在自適應電容模式下,所述電容偵測電路用來進行:步驟A,提供第一充電路徑將感應電容的電壓充電至第一電源電壓,並且提供第二充電路徑將儲存電容的電壓充電至第二電源電壓,其中第二電源電壓小於第一電源電壓,且感應電容包括寄生電容和手指電容;步驟B,提供放電路徑將可變電容的電壓放電至接地電壓,並且提供第一電荷轉移路徑將感應電容所儲存的電荷轉移至儲存電容;步驟C,提供第一充電路徑將感應電容的電壓充電至第一電源電壓,並且提供第二電荷轉移路徑將儲存電容所儲存的電荷轉移至可變電容,然後對經電荷轉移至可變電容後的儲存電容的電壓和第二電源電壓進行比較,並且根據比較結果來調整可變電容的該電容值;以及步驟D,重複步驟B和步驟C,直到經電荷轉移至可變電容後的儲存電容的電壓等於第二電源電壓,所述電容偵測電路才完成自適應電容模式。In addition, the embodiment of the present invention further provides an operating method for the capacitance detection circuit. The capacitance detection circuit has an adaptive capacitance mode and a touch button mode, and it includes a storage capacitor and a variable capacitor. The operation method includes the following steps. In the adaptive capacitance mode, the capacitance detection circuit is used to perform: Step A, providing a first charging path to charge the voltage of the sensing capacitor to the first power supply voltage, and providing a second charging path to charge the voltage of the storage capacitor to The second power supply voltage, wherein the second power supply voltage is less than the first power supply voltage, and the sensing capacitor includes parasitic capacitance and finger capacitance; step B, providing a discharge path to discharge the voltage of the variable capacitor to the ground voltage, and providing a first charge transfer path The charge stored in the sensing capacitor is transferred to the storage capacitor; step C, a first charging path is provided to charge the voltage of the sensing capacitor to the first power supply voltage, and a second charge transfer path is provided to transfer the charge stored in the storage capacitor to the variable And then compare the voltage of the storage capacitor after the charge is transferred to the variable capacitor with the second power supply voltage, and adjust the capacitance value of the variable capacitor according to the comparison result; and step D, repeat step B and step C, The capacitance detection circuit does not complete the adaptive capacitance mode until the voltage of the storage capacitor after the charge is transferred to the variable capacitor is equal to the second power supply voltage.
為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.
以下是通過特定的具體實施例來說明本發明的實施方式,本領域技術人員可由本說明書所提供的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所提供的內容並非用以限制本發明的保護範圍。The following are specific examples to illustrate the implementation of the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content provided in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual dimensions, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the provided content is not intended to limit the protection scope of the present invention.
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者訊號,但這些元件或者訊號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一訊號與另一訊號。另外,本文中所使用的術語“或”,應視實際情況可能包含相關聯的列出項目中的任一個或者多個的組合。It should be understood that although terms such as “first”, “second”, and “third” may be used in this document to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one element from another, or one signal from another signal. In addition, the term "or" used in this article should, depending on the actual situation, possibly include any one or a combination of more of the associated listed items.
請參閱圖2,圖2是本發明實施例所提供的電容偵測電路的示意圖。電容偵測電路20可同樣整合於單一晶片中,且其也耦接一個微控制器和至少一個被用來實現作為按鍵的導體(圖2皆未示)。為了方便以下說明,圖2的電容偵測電路20也僅採用耦接一個導體的例子,但不同於圖1的電容偵測電路10,電容偵測電路20除了包括相互並聯的儲存電容Cs2和可變電容Cr外,更包括由五個開關SW1a、SW1b、SW2a、SW2b、SW3a所組成的電荷轉移架構。在本實施例中,電容偵測電路20是通過接腳P1耦接該導體,且開關SW1b耦接於節點C及儲存電容Cs2間,節點C則位於接腳P1及開關SW1b間。Please refer to FIG. 2. FIG. 2 is a schematic diagram of a capacitance detection circuit provided by an embodiment of the present invention. The
另外,開關SW2a耦接於節點C及第一電源電壓Va間,開關SW3a則耦接於第二電源電壓Vb及儲存電容Cs2間,且開關SW3a和開關SW1b共同通過節點D耦接儲存電容Cs2的第一端,儲存電容Cs2的第二端則耦接接地電壓GND。最後,開關SW2b耦接於節點D及可變電容Cr間,開關SW1a則耦接於接地電壓GND及可變電容Cr間,且開關SW1a和開關SW2b共同通過節點E耦接可變電容Cr的第一端,可變電容Cr的第二端則也耦接接地電壓GND。換句話說,電容偵測電路20還可包括一個用來產生多個控制信號(圖2未示),以分別控制導通或截止五個開關SW1a、SW1b、SW2a、SW2b、SW3a的路徑選擇電路(圖2未示),但本發明並不限制路徑選擇電路的具體實現方式,因此有關其細節於此就不再多加贅述。In addition, the switch SW2a is coupled between the node C and the first power voltage Va, the switch SW3a is coupled between the second power voltage Vb and the storage capacitor Cs2, and the switch SW3a and the switch SW1b are commonly coupled to the storage capacitor Cs2 through the node D. The first terminal and the second terminal of the storage capacitor Cs2 are coupled to the ground voltage GND. Finally, the switch SW2b is coupled between the node D and the variable capacitor Cr, the switch SW1a is coupled between the ground voltage GND and the variable capacitor Cr, and the switch SW1a and the switch SW2b are jointly coupled to the first of the variable capacitor Cr through the node E At one end, the second end of the variable capacitor Cr is also coupled to the ground voltage GND. In other words, the
需說明的是,相較於電容偵測電路10的運作方法,電容偵測電路20則用來於一自適應電容模式下調整可變電容Cr的電容值,並於一觸控按鍵模式下偵測感應電容(Cd+Cf)的電容值變化,以產生有關該導體的觸控值(圖2未示)。因此,如圖2所示,在自適應電容模式下,電容偵測電路20是會先同時導通開關SW2a和開關SW3a,使得提供第一充電路徑將感應電容(Cd+Cf)的電壓Vdf充電至第一電源電壓Va,並且提供第二充電路徑將儲存電容Cs2的電壓Vcs2充電至第二電源電壓Vb,然後再同時截止開關SW2a和開關SW3a。It should be noted that, compared to the operation method of the
如前所述,由於晶片外的感應電容除了手指電容Cf,還有一個主要來自於PCB上的寄生電容Cd,所以本實施例可將感應電容簡化表示為(Cd+Cf)。另外,第二電源電壓Vb則小於第一電源電壓Va,且電容偵測電路20還可包括一個用來產生第一電源電壓Va和第二電源電壓Vb的內部穩壓器(圖2未示),但本發明亦不限制內部穩壓器的具體實現方式,因此有關其細節於此就不再多加贅述。總而言之,本實施例可假設第一電源電壓Va為2伏特,且第二電源電壓Vb為1伏特(即Vb=Va/2)。As mentioned above, in addition to the finger capacitance Cf, the inductive capacitance outside the chip also has a parasitic capacitance Cd mainly from the PCB. Therefore, in this embodiment, the inductive capacitance can be simplified as (Cd+Cf). In addition, the second power supply voltage Vb is less than the first power supply voltage Va, and the
其次,電容偵測電路20會同時導通開關SW1a和開關SW1b,使得提供放電路徑將可變電容Cr的電壓放電至接地電壓GND,並且提供第一電荷轉移路徑將感應電容(Cd+Cf)所儲存的電荷轉移至儲存電容Cs2,然後再同時截止開關SW1a和開關SW1b。接著,電容偵測電路20會同時導通開關SW2a和開關SW2b,使得提供第一充電路徑將感應電容(Cd+Cf)的電壓Vdf充電至第一電源電壓Va,並且提供第二電荷轉移路徑將儲存電容Cs2所儲存的電荷轉移至可變電容Cr,然後再同時截止開關SW2a和開關SW2b,以及對經電荷轉移至可變電容Cr後的儲存電容Cs2的電壓Vcs2和第二電源電壓Vb進行比較,並且根據比較結果來調整可變電容Cr的電容值。Secondly, the
舉例來說,如果這時候的電壓Vcs2大於第二電源電壓Vb的話,代表可變電容Cr的電容值過小,所以電容偵測電路20可通過一可變電容控制器(圖2未示)來調大可變電容Cr的電容值;相對地,如果這時候的電壓Vcs2小於第二電源電壓Vb的話,代表可變電容Cr的電容值過大,所以電容偵測電路20可通過可變電容控制器來調小可變電容Cr的電容值,但本發明亦不限制可變電容控制器的具體實現方式,因此有關其細節於此就不再多加贅述。需說明的是,電容偵測電路20可反複地提供可變電容Cr的放電路徑加第一電荷轉移路徑以及第一充電路徑加第二電荷轉移路徑,或者是說循環地導通開關SW1a加SW1b和開關SW2a加SW2b,直到經電荷轉移至可變電容Cr後的儲存電容Cs2的電壓Vcs2等於第二電源電壓Vb,或者電壓Vcs2和第二電源電壓Vb趨近為一致,電容偵測電路20才算完成自適應電容模式。For example, if the voltage Vcs2 at this time is greater than the second power supply voltage Vb, it means that the capacitance value of the variable capacitor Cr is too small, so the
換句話說,自適應電容模式的目的在於,調整使得可變電容Cr的電容值等於或趨近於當前感應電容(Cd+Cf)的電容值。另外,應當理解的是,儲存電容Cs2是由感應電容(Cd+Cf)來對它進行充電,並且由它來對可變電容Cr進行放電。因此,本實施例可只需要將儲存電容Cs2設計約為200pF,使得它和電容偵測電路20可整合於單一晶片中。如此一來,電容偵測電路20不需外掛電容組件,以至於其可避免受環境溫濕度的變化影響而造成偵測的誤判。相對地,內置約200pF的小電容並不會衰減觸控值的變化量,反而能達到較高的偵測分辨率。In other words, the purpose of the adaptive capacitance mode is to adjust the capacitance value of the variable capacitor Cr to be equal to or close to the capacitance value of the current sensing capacitor (Cd+Cf). In addition, it should be understood that the storage capacitor Cs2 is charged by the inductive capacitor (Cd+Cf), and the variable capacitor Cr is discharged by it. Therefore, in this embodiment, it is only necessary to design the storage capacitor Cs2 to be about 200 pF, so that it and the
另外,為了避免感應電容(Cd+Cf)因受外部影響而發生變化,所以電容偵測電路20必須先完成自適應電容模式後才能進入觸控按鍵模式。換句話說,電容偵測電路20需要在固定一段時間內進行自適應電容模式,而且在進入觸控按鍵模式後,不同於圖1的電容偵測電路10使用一般的電壓偵測方式,即使用比較器CP來偵測電壓Vcs是否達到參考電壓Vref,電容偵測電路20更包括壓控振盪器(VCO)201,用來同時振盪出第一頻率和第二頻率(圖2皆未示),其中第一頻率是由電壓Vcs2控制所產生,而第二頻率是由第二電源電壓Vb控制所產生。因此,當外部電源受到噪聲干擾時,電壓Vcs2和第二電源電壓Vb也會同時受到噪聲干擾,且第一頻率和第二頻率互相抵減的頻率仍趨近一致,以至於電容偵測電路20可達到去除外部電源受到噪聲干擾,或者是說使用壓控振盪器201能同步抵減外部電源的噪聲干擾,以也達到較高的偵測分辨率。In addition, in order to prevent the sensing capacitance (Cd+Cf) from changing due to external influences, the
需說明的是,在導通開關SW1b以將感應電容(Cd+Cf)所儲存的電荷轉移至儲存電容Cs2後,儲存電容Cs2的電壓Vcs2可表示為:
,其中
為在導通開關SW1b以將感應電容(Cd+Cf)所儲存的電荷轉移至儲存電容Cs2前的電壓Vcs2。另外,在導通開關SW2b以將儲存電容Cs2所儲存的電荷轉移至可變電容Cr後,儲存電容Cs2的電壓Vcs2又可表示為:
,其中
為在導通開關SW2b以將儲存電容Cs2所儲存的電荷轉移至可變電容Cr前的電壓Vcs2。由此可見,假如
,則每次從感應電容(Cd+Cf)轉移至儲存電容Cs2和從儲存電容Cs2轉移至可變電容Cr的電荷量相等,所以在完成自適應電容模式時,儲存電容Cs2的電壓Vcs2將等於第二電源電壓Vb,或者是說儲存電容Cs2的電壓Vcs2可穩定保持在第二電源電壓Vb附近,使得壓控振盪器201可穩定振盪出相同或趨近一致的第一頻率和第二頻率。由於調整可變電容Cr的細節已如同前述內容所述,故於此就不再多加贅述。
It should be noted that after the switch SW1b is turned on to transfer the charge stored in the sensing capacitor (Cd+Cf) to the storage capacitor Cs2, the voltage Vcs2 of the storage capacitor Cs2 can be expressed as: ,among them It is the voltage Vcs2 before the switch SW1b is turned on to transfer the charge stored in the sensing capacitor (Cd+Cf) to the storage capacitor Cs2. In addition, after the switch SW2b is turned on to transfer the charge stored in the storage capacitor Cs2 to the variable capacitor Cr, the voltage Vcs2 of the storage capacitor Cs2 can be expressed as: ,among them This is the voltage Vcs2 before the switch SW2b is turned on to transfer the charge stored in the storage capacitor Cs2 to the variable capacitor Cr. It can be seen that if , The amount of charge transferred from the sensing capacitor (Cd+Cf) to the storage capacitor Cs2 and from the storage capacitor Cs2 to the variable capacitor Cr is equal each time, so when the adaptive capacitor mode is completed, the voltage Vcs2 of the storage capacitor Cs2 will be The second power supply voltage Vb, or the voltage Vcs2 of the storage capacitor Cs2, can be stably maintained near the second power supply voltage Vb, so that the voltage-controlled
另一方面,如圖2所示,在觸控按鍵模式下,電容偵測電路20是會先同時導通開關SW1a和開關SW1b,提供放電路徑將可變電容Cr的電壓放電至接地電壓GND,並且提供第一電荷轉移路徑將感應電容(Cd+Cf)所儲存的電荷轉移至儲存電容Cs2,然後再同時截止開關SW1a和開關SW1b。其次,電容偵測電路20會同時導通開關SW2a和開關SW2b,使得提供第一充電路徑將感應電容(Cd+Cf)的電壓充電至第一電源電壓Va,並且提供第二電荷轉移路徑將儲存電容Cs2所儲存的電荷轉移至可變電容Cr,然後再同時截止開關SW2a和開關SW2b,並且根據經電荷轉移至可變電容Cr後的儲存電容Cs2的電壓Vcs2來偵測感應電容(Cd+Cf)的電容值變化。On the other hand, as shown in FIG. 2, in the touch button mode, the
請注意,通過前述內容已能清楚瞭解,電容偵測電路20並非使用電壓檢測值,但事實上,壓控振盪器201所振盪出的第一頻率和第二頻率還是反映電壓Vcs2和第二電源電壓Vb。因此,這時候的電容偵測電路20仍可視為對經電荷轉移至可變電容Cr後的儲存電容Cs2的電壓Vcs2和第二電源電壓Vb進行比較,並且根據比較結果來偵測感應電容(Cd+Cf)的電容值變化。舉例來說,如果這時候的電壓Vcs2等於第二電源電壓Vb的話,代表感應電容(Cd+Cf)的電容值沒有變化。相對地,如果這時候的電壓Vcs2大於第二電源電壓Vb的話,代表感應電容(Cd+Cf)的電容值變大,所以電容偵測電路20可反複地提供可變電容Cr的放電路徑加第一電荷轉移路徑以及第一充電路徑加第二電荷轉移路徑,或者是說循環地導通開關SW1a加SW1b和開關SW2a加SW2b,直到一固定時間後,如果電壓Vcs2和第二電源電壓Vb的電壓差距越來越大,或者是說電壓差距趨於穩定,這時候的微控制器就可根據感應電容(Cd+Cf)的電容值變化來判斷手指(圖2未示)有按壓該導體,而如果電壓Vcs2和第二電源電壓Vb的電壓差距越來越小的話,微控制器也可判斷手指正遠離該導體。Please note that it can be clearly understood from the foregoing that the
另外,如圖2所示,電容偵測電路20更可包括計數器203,耦接壓控振盪器201,用來儲存壓控振盪器201所產生的至少一數值,並且依據該至少一數值,計數器203能夠產生觸控值,以反映感應電容(Cd1+Cf1)的電容值變化。舉例來說,當手指有按壓該導體時,即使寄生電容Cd保持不變,但手指電容Cf卻從0pF變成約為0.5pF,以至於充電增加,使得電壓Vcs2上升,且壓控振盪器201所振盪出的第一頻率也相對上升。因此,在一固定時間內,計數器203所儲存的數值將變大並產生相應的觸控值,使得微控制器可根據觸控值來判斷手指有按壓該導體。相對地,當手指離開該導體時,手指電容Cf則恢復為0pF,以至於充電減少,使得電壓Vcs2下降,且壓控振盪器201所振盪出的第一頻率也相對下降。因此,在一固定時間內,計數器203所儲存的數值將變小並產生相應的觸控值,使得微控制器可根據觸控值來判斷手指沒有按壓該導體。總而言之,計數器203所產生觸控值及微控制器所藉由計數器203上的觸控值來判斷手指壓鍵狀態的運作原理已皆為本技術領域中具有通常知識者所習知,因此其細節就不再多加贅述。In addition, as shown in FIG. 2, the
值得一提的是,如前所述,寄生電容Cd的電容值在每個觸控按鍵(即導體)上又都不一致。因此,對於具有多個觸控按鍵的產品來說,電容偵測電路20就能讓每個觸控按鍵都具有對應一個可變電容Cr的電容值,並藉由在自適應電容模式下,調整可變電容Cr的電容值,讓每個觸控按鍵在計數器203上的觸控值能達到一致。換句話說,本實施例可解決了多個觸控按鍵在PCB佈板時因寄生電容Cd不同所造成觸控值不一致的問題。It is worth mentioning that, as mentioned above, the capacitance value of the parasitic capacitance Cd is not consistent on each touch button (ie, conductor). Therefore, for products with multiple touch buttons, the
最後,為了更進一步說明關於電容偵測電路20的運作流程,本發明進一步提供其運作方法的一種實施方式。請參閱圖3,圖3是本發明實施例所提供的運作方法的步驟流程圖。需說明的是,圖3的運作方法可以是用於圖2的電容偵測電路20中,因此請一併參照圖2以利理解,但本發明並不限制圖3的運作方法僅能夠用於圖2的電容偵測電路20中。同樣,為了方便以下說明,圖3也僅示意電容偵測電路20為耦接一個導體的運作方法,但針對電容偵測電路20為耦接多個導體的運作方法,本技術領域中具有通常知識者應可由本說明書所提供的內容加以修改和擴充。另外,由於詳細步驟流程如前述實施例所述,故於此僅作概述而不再多加冗述。Finally, in order to further explain the operation flow of the
如圖3所示,在自適應電容模式下的步驟S301中,提供第一充電路徑將感應電容(Cd+Cf)的電壓Vdf充電至第一電源電壓Va,並且提供第二充電路徑將儲存電容Cs2的電壓Vcs2充電至第二電源電壓Vb。其次,在自適應電容模式下的步驟S302中,提供放電路徑將可變電容Cr的電壓放電至接地電壓GND,並且提供第一電荷轉移路徑將感應電容(Cd+Cf)所儲存的電荷轉移至儲存電容Cs2。As shown in FIG. 3, in step S301 in the adaptive capacitance mode, a first charging path is provided to charge the voltage Vdf of the sensing capacitor (Cd+Cf) to the first power supply voltage Va, and a second charging path is provided to charge the storage capacitor The voltage Vcs2 of Cs2 is charged to the second power supply voltage Vb. Next, in step S302 in the adaptive capacitance mode, a discharge path is provided to discharge the voltage of the variable capacitor Cr to the ground voltage GND, and a first charge transfer path is provided to transfer the charge stored in the sensing capacitor (Cd+Cf) to Storage capacitor Cs2.
接著,在自適應電容模式下的步驟S303中,提供第一充電路徑將感應電容(Cd+Cf)的電壓Vdf充電至第一電源電壓Va,並且提供第二電荷轉移路徑將儲存電容Cs2所儲存的電荷轉移至可變電容Cr。然後,在自適應電容模式下的步驟S304中,檢查經電荷轉移至可變電容Cr後的儲存電容Cs2的電壓Vcs2是否等於第二電源電壓Vb。若不是,即執行步驟S305,根據電壓Vcs2和第二電源電壓Vb的比較結果來調整可變電容Cr的電容值,並且在完成步驟S305後,返回執行步驟S302至步驟S304。換句話說,步驟S302至步驟S305會重複地被執行,直到經電荷轉移至可變電容Cr後的儲存電容Cs2的電壓Vcs2等於第二電源電壓Vb,電容偵測電路20才算完成自適應電容模式。Next, in step S303 in the adaptive capacitance mode, a first charging path is provided to charge the voltage Vdf of the sensing capacitor (Cd+Cf) to the first power supply voltage Va, and a second charge transfer path is provided to store the storage capacitor Cs2 The charge is transferred to the variable capacitor Cr. Then, in step S304 in the adaptive capacitance mode, it is checked whether the voltage Vcs2 of the storage capacitor Cs2 after the charge is transferred to the variable capacitor Cr is equal to the second power supply voltage Vb. If not, step S305 is executed to adjust the capacitance value of the variable capacitor Cr according to the comparison result of the voltage Vcs2 and the second power supply voltage Vb, and after step S305 is completed, step S302 to step S304 are returned to. In other words, steps S302 to S305 are repeatedly executed until the voltage Vcs2 of the storage capacitor Cs2 after the charge is transferred to the variable capacitor Cr is equal to the second power supply voltage Vb, and then the
另外,在觸控按鍵模式下的步驟S306中,提供放電路徑將可變電容Cr的電壓放電至接地電壓GND,並且提供第一電荷轉移路徑將感應電容(Cd+Cf)所儲存的電荷轉移至儲存電容Cs2。接著,在觸控按鍵模式下的步驟S307中,提供第一充電路徑將感應電容(Cd+Cf)的電壓充電至第一電源電壓Va,並且提供第二電荷轉移路徑將儲存電容Cs2所儲存的電荷轉移至可變電容Cr。然後,在觸控按鍵模式下的步驟S308中,根據經電荷轉移至可變電容Cr後的儲存電容Cs2的電壓Vcs2來偵測感應電容(Cd+Cf)的電容值變化,並且在完成步驟S308後,返回執行步驟S306至步驟S308。換句話說,步驟S306至步驟S308會重複地被執行,使得電容偵測電路20可產生有關該導體的觸控值,以反映感應電容(Cd+Cf)的電容值變化。In addition, in step S306 in the touch key mode, a discharge path is provided to discharge the voltage of the variable capacitor Cr to the ground voltage GND, and a first charge transfer path is provided to transfer the charge stored in the sensing capacitor (Cd+Cf) to Storage capacitor Cs2. Next, in step S307 in the touch key mode, a first charging path is provided to charge the voltage of the sensing capacitor (Cd+Cf) to the first power supply voltage Va, and a second charge transfer path is provided to store the storage capacitor Cs2 The charge is transferred to the variable capacitor Cr. Then, in step S308 in the touch key mode, the capacitance value change of the sensing capacitor (Cd+Cf) is detected according to the voltage Vcs2 of the storage capacitor Cs2 after the charge is transferred to the variable capacitor Cr, and the step S308 is completed After that, return to step S306 to step S308. In other words, steps S306 to S308 are repeatedly executed, so that the
綜上所述,本發明實施例提供一種電容偵測電路及其運作方法,通過將儲存電容整合於單一晶片中,以避免受環境溫濕度的變化影響而造成偵測的誤判,並且藉由在自適應電容模式下,調整可變電容的電容值,讓每個觸控按鍵在計數器上的觸控值能達到一致,或者是說解決了多個觸控按鍵在PCB佈板時因寄生電容不同所造成觸控值不一致的問題。另外,所述電容偵測電路使用壓控振盪器,能同步抵減外部電源的噪聲干擾,以達到較高的偵測分辨率。In summary, the embodiments of the present invention provide a capacitance detection circuit and an operating method thereof. The storage capacitor is integrated into a single chip to avoid false detection caused by changes in environmental temperature and humidity. In adaptive capacitance mode, adjust the capacitance value of the variable capacitor, so that the touch value of each touch button on the counter can be consistent, or it can solve the problem of different parasitic capacitances when multiple touch buttons are arranged on the PCB. The resulting inconsistent touch values. In addition, the capacitance detection circuit uses a voltage-controlled oscillator, which can simultaneously reduce the noise interference of the external power supply to achieve a higher detection resolution.
以上所提供的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。The content provided above is only the preferred and feasible embodiments of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.
10、20:電容偵測電路 11:手指 12:導體 101:電壓偵測器 201:壓控振盪器 203:計數器 CP:比較器 Cs、Cs2:儲存電容 Cf:手指電容 Cd:寄生電容 Cr:可變電容 SW1、SW2、SW3、SW1a、SW1b、SW2a、SW2b、SW3a:開關 VDD、Va、Vb:電源電壓 GND:接地電壓 Vref:參考電壓 Vcs、Vcs2、Vdf:電壓 A、B、C、D、E:節點 P1:接腳 S301~S308:流程步驟 10.20: Capacitance detection circuit 11: fingers 12: Conductor 101: Voltage Detector 201: Voltage Controlled Oscillator 203: Counter CP: Comparator Cs, Cs2: storage capacitor Cf: Finger capacitance Cd: Parasitic capacitance Cr: variable capacitance SW1, SW2, SW3, SW1a, SW1b, SW2a, SW2b, SW3a: switch VDD, Va, Vb: power supply voltage GND: Ground voltage Vref: reference voltage Vcs, Vcs2, Vdf: voltage A, B, C, D, E: node P1: pin S301~S308: Process steps
圖1是習知電容偵測電路的示意圖。Figure 1 is a schematic diagram of a conventional capacitance detection circuit.
圖2是本發明實施例所提供的電容偵測電路的示意圖。FIG. 2 is a schematic diagram of a capacitance detection circuit provided by an embodiment of the present invention.
圖3是本發明實施例所提供的運作方法的步驟流程圖。FIG. 3 is a flow chart of the steps of the operation method provided by the embodiment of the present invention.
20:電容偵測電路 20: Capacitance detection circuit
201:壓控振盪器 201: Voltage Controlled Oscillator
203:計數器 203: Counter
Cs2:儲存電容 Cs2: storage capacitor
Cf:手指電容 Cf: Finger capacitance
Cd:寄生電容 Cd: Parasitic capacitance
Cr:可變電容 Cr: variable capacitance
SW1a、SW1b、SW2a、SW2b、SW3a:開關 SW1a, SW1b, SW2a, SW2b, SW3a: switch
Va、Vb:電源電壓 Va, Vb: power supply voltage
GND:接地電壓 GND: Ground voltage
Vcs2、Vdf:電壓 Vcs2, Vdf: voltage
C、D、E:節點 C, D, E: node
P1:接腳 P1: pin
Claims (9)
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI444877B (en) * | 2010-07-05 | 2014-07-11 | Holtek Semiconductor Inc | Capacitive touching apparatus |
US8841927B2 (en) * | 2011-04-21 | 2014-09-23 | Silicon Works Co., Ltd. | Touch sensing circuit |
TW201629735A (en) * | 2015-02-02 | 2016-08-16 | 新唐科技股份有限公司 | Sensing device |
TW201716970A (en) * | 2015-11-11 | 2017-05-16 | 敦泰電子有限公司 | Touch apparatus, capacitive touch detecting circuit thereof and touch detecting method using the same |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI444877B (en) * | 2010-07-05 | 2014-07-11 | Holtek Semiconductor Inc | Capacitive touching apparatus |
US8841927B2 (en) * | 2011-04-21 | 2014-09-23 | Silicon Works Co., Ltd. | Touch sensing circuit |
TW201629735A (en) * | 2015-02-02 | 2016-08-16 | 新唐科技股份有限公司 | Sensing device |
TW201716970A (en) * | 2015-11-11 | 2017-05-16 | 敦泰電子有限公司 | Touch apparatus, capacitive touch detecting circuit thereof and touch detecting method using the same |
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