TWI708434B - Highly-integrated multi-antenna array - Google Patents

Highly-integrated multi-antenna array Download PDF

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TWI708434B
TWI708434B TW108147962A TW108147962A TWI708434B TW I708434 B TWI708434 B TW I708434B TW 108147962 A TW108147962 A TW 108147962A TW 108147962 A TW108147962 A TW 108147962A TW I708434 B TWI708434 B TW I708434B
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slot structure
conductor layer
slot
antenna array
wavelength
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TW108147962A
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TW202125902A (en
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翁金輅
李偉宇
鍾蔿
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財團法人工業技術研究院
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Priority to CN201911390439.9A priority patent/CN113054409B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/50Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00Antenna arrays or systems
    • H01Q21/0006Particular feeding systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00Antenna arrays or systems
    • H01Q21/06Arrays of individually energised antenna units similarly polarised and spaced apart

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  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Aerials (AREA)

Abstract

The disclosure provides a highly-integrated multi-antenna array, comprising a first conductor layer, a second conductor layer, a plurality of conjoined connecting structures, a plurality of slot antennas and a conjoined slot structure. The second conductor layer is spaced apart from the first conductor layer at a first interval. The plurality of conjoined conducting structures electrically connect the first conductor layer and the second conductor layer. Each of the slot antennas includes a radiating slot structure and a signal coupling line which are partially overlapped or across each other. All of the radiating slot structures are formed at the second conductor layer. Each of the signal coupling lines is spaced apart from the second conductor layer at a coupling interval, and each of the signal coupling lines has a signal feeding point. Each of the slot antennas is excited to generate at least one resonant mode covering at least one identical first communication band. The conjoined slot structure is formed at the second conductor layer, and connects with all of the radiating slot structures.

Description

高整合度多天線陣列Highly integrated multi-antenna array

本發明所屬之技術領域係關於一種高整合度多天線設計,特別是關於一種能提高資料傳輸速度的高整合度多天線陣列設計架構。The technical field to which the present invention belongs relates to a highly integrated multi-antenna design, and particularly relates to a highly integrated multi-antenna array design architecture that can increase data transmission speed.

由於無線通訊訊號品質與傳輸速度需求的不斷提升,導致了多輸入多輸出(MIMO, Multi-Input Multi-Output System)多天線技術的的快速發展。多輸入多輸出多(MIMO)天線技術有機會能提高頻譜效率,增加通道容量及數據傳輸速率,並且有機會能提升通訊的接收訊號可靠度,因此成為多倍Gbps傳輸速率通訊系統的發展技術重點之一。Due to the continuous improvement of wireless communication signal quality and transmission speed requirements, the rapid development of MIMO (Multi-Input Multi-Output System) multi-antenna technology has resulted. Multiple input multiple output multiple (MIMO) antenna technology has the opportunity to improve spectrum efficiency, increase channel capacity and data transmission rate, and has the opportunity to improve the reliability of communication reception signals, so it has become the development technology focus of multiple Gbps transmission rate communication systems one.

然而,要如何才能夠成功將多天線陣列技術應用於各種不同的無線通訊裝置或設備當中,並且將多天線陣列設計達成具有良好匹配、高整合度、薄型化以及抵抗鄰近環境耦合干擾的優勢,卻是一項不易克服的技術挑戰,也是目前有待解決的一項重要課題。因為複數個相鄰相同頻段操作的天線,可能會產生相互耦合干擾以及鄰近環境耦合干擾的問題,因此可能會造成多天線間封包相關係數(ECC, Envelop Correlation Coefficient)提高,而導致天線輻射特性衰減的情形發生。因此,造成資料傳輸速度的下降,並增加了多天線整合設計的技術困難。However, how can we successfully apply the multi-antenna array technology to a variety of different wireless communication devices or equipment, and achieve the advantages of good matching, high integration, thinness, and resistance to coupling interference from adjacent environments? But it is a technical challenge that is not easy to overcome, and it is also an important subject to be solved at present. Because multiple adjacent antennas operating in the same frequency band may cause mutual coupling interference and adjacent environment coupling interference, it may increase the envelope correlation coefficient (ECC, Envelop Correlation Coefficient) between multiple antennas, and cause antenna radiation characteristics to attenuate The situation happened. Therefore, the data transmission speed is reduced, and the technical difficulty of multi-antenna integrated design is increased.

部分的先前技術文獻已提出在多天線間接地面上設計週期性結構作為能量隔離器,來提升多天線間能量隔離度以及抗鄰近環境干擾能力的設計方式。然而這樣的設計方法,卻有可能造成製程不穩定因素,進而可能造成量產成本提高。並且可能導致激發額外的耦合電流,進而造成多天線間的相關係數增加。此外也有可能增加多天線陣列的整體尺寸,因此較不易應用實現於各種不同的無線裝置或設備當中。Some prior art documents have proposed designing a periodic structure on the indirect ground of multiple antennas as an energy isolator to improve the energy isolation between multiple antennas and the ability to resist adjacent environment interference. However, such a design method may cause process instability, which may further increase the cost of mass production. And it may cause extra coupling current to be excited, which in turn causes the correlation coefficient between multiple antennas to increase. In addition, it is also possible to increase the overall size of the multi-antenna array, so it is less easy to apply to various wireless devices or devices.

因此需要一種可以解決上述這些問題的設計方式,以滿足未來高資料傳輸速度多天線通訊裝置或設備的實際應用需求。Therefore, a design method that can solve the above-mentioned problems is needed to meet the practical application requirements of multi-antenna communication devices or equipment with high data transmission speed in the future.

有鑑於此,本揭露的實施範例揭露一種高整合度多天線陣列。依據範例之一些實作例能解決上述等技術問題。In view of this, the embodiment of the present disclosure discloses a highly integrated multi-antenna array. Some practical examples based on the examples can solve the above technical problems.

根據一實施範例,本揭露提出一種高整合度多天線陣列。該高整合度多天線陣列,包含一第一導體層、一第二導體層、複數個連體導通結構、複數個槽孔天線以及一連體槽孔結構。該第二導體層與該第一導體層之間具有一第一間距。該複數個連體導通結構電氣連接該第一導體層以及該第二導體層。其中,各該槽孔天線均各自具有一輻射槽孔結構與一訊號耦合線。各該輻射槽孔結構與該訊號耦合線均彼此部分重疊或交錯。該複數個輻射槽孔結構均形成於該第二導體層。該複數個訊號耦合線均各自與該第二導體層之間具有一耦合間距,並且該複數個訊號耦合線均各自具有一訊號饋入端。各該槽孔天線均各自被激發產生至少一共振模態,該複數個共振模態涵蓋至少一相同的第一通訊系統頻段。該連體槽孔結構形成於該第二導體層,並且其連通該複數個輻射槽孔結構。According to an embodiment, the present disclosure proposes a highly integrated multi-antenna array. The highly integrated multi-antenna array includes a first conductor layer, a second conductor layer, a plurality of connected conductive structures, a plurality of slot antennas, and a connected slot structure. There is a first distance between the second conductor layer and the first conductor layer. The plurality of connected conductive structures are electrically connected to the first conductor layer and the second conductor layer. Wherein, each slot antenna has a radiation slot structure and a signal coupling line. Each of the radiation slot structure and the signal coupling line partially overlap or intersect each other. The plurality of radiation slot structures are all formed on the second conductor layer. Each of the plurality of signal coupling lines has a coupling distance with the second conductor layer, and each of the plurality of signal coupling lines has a signal feeding end. Each of the slot antennas is excited to generate at least one resonance mode, and the plurality of resonance modes cover at least one same frequency band of the first communication system. The conjoined slot structure is formed on the second conductor layer, and it communicates with the plurality of radiation slot structures.

為了對本案之上述及其他內容有更佳的瞭解,下文特舉實施例,並配合所附圖式,作詳細說明如下:In order to have a better understanding of the above and other contents of this case, the following examples are specially cited, in conjunction with the accompanying drawings, and detailed descriptions are as follows:

本揭露提供一高整合度多天線陣列的實施範例。該高整合度多天線陣列,包含一第一導體層、一第二導體層、複數個連體導通結構、複數個槽孔天線以及一連體槽孔結構。該第二導體層與該第一導體層之間具有一第一間距。該複數個連體導通結構電氣連接該第一導體層以及該第二導體層。其中,各該槽孔天線均各自具有一輻射槽孔結構與一訊號耦合線。各該輻射槽孔結構與該訊號耦合線均彼此部分重疊或交錯。該複數個輻射槽孔結構均形成於該第二導體層。該複數個訊號耦合線均各自與該第二導體層之間具有一耦合間距,並且該複數個訊號耦合線均各自具有一訊號饋入端。各該槽孔天線均各自被激發產生至少一共振模態,該複數個共振模態涵蓋至少一相同的第一通訊系統頻段。該連體槽孔結構形成於該第二導體層,並且其連通該複數個輻射槽孔結構。This disclosure provides an implementation example of a highly integrated multi-antenna array. The highly integrated multi-antenna array includes a first conductor layer, a second conductor layer, a plurality of connected conductive structures, a plurality of slot antennas, and a connected slot structure. There is a first distance between the second conductor layer and the first conductor layer. The plurality of connected conductive structures are electrically connected to the first conductor layer and the second conductor layer. Wherein, each slot antenna has a radiation slot structure and a signal coupling line. Each of the radiation slot structure and the signal coupling line partially overlap or intersect each other. The plurality of radiation slot structures are all formed on the second conductor layer. Each of the plurality of signal coupling lines has a coupling distance with the second conductor layer, and each of the plurality of signal coupling lines has a signal feeding end. Each of the slot antennas is excited to generate at least one resonance mode, and the plurality of resonance modes cover at least one same frequency band of the first communication system. The conjoined slot structure is formed on the second conductor layer, and it communicates with the plurality of radiation slot structures.

為了能夠成功達成高整合度以及薄型化的功效。本發明所提出該高整合度多天線陣列,其藉由設計該複數個輻射槽孔結構均形成於該第二導體層,並設計該複數個連體導通結構均電氣連接該第一導體層以及該第二導體層,來致使該第一導體層成功同時等效形成一多天線陣列輻射能量反射層以及一鄰近耦合能量屏蔽層,因此該第一導體層能夠成功導引多天線陣列輻射能量遠離鄰近耦合能量干擾。除此之外,其藉由設計各該輻射槽孔結構與該訊號耦合線均彼此部分重疊或交錯,以及設計該複數個訊號耦合線均各自與該第二導體層之間具有一耦合間距,該耦合間距之距離介於該第一通訊頻段最低操作頻率之0.001波長到0.035波長之間。並且設計一連體槽孔結構形成於該第二導體層,該連體槽孔結構連通該複數個輻射槽孔結構。如此該連體槽孔結構能夠有效降低該多天線陣列之等效寄生電容效應,成功補償藉該第一導體層與該第二導體層之間產生的耦合電容效應。因此各該槽孔天線均能成功被激發產生至少一匹配良好的共振模態涵蓋至少一相同的第一通訊頻段,並且該第一間距之距離僅需介於該第一通訊頻段最低操作頻率之0.001波長到0.038波長之間。因此本發明能成功達成良好匹配與高整合度以及薄型化的功效。In order to successfully achieve high integration and thinness. The highly integrated multi-antenna array proposed by the present invention is designed by designing the plurality of radiation slot structures to be formed on the second conductor layer, and designing the plurality of conjoined conductive structures to electrically connect the first conductor layer and The second conductor layer causes the first conductor layer to successfully form a multi-antenna array radiation energy reflection layer and an adjacent coupling energy shielding layer at the same time. Therefore, the first conductor layer can successfully guide the multi-antenna array radiation energy away from The adjacent coupling energy interference. In addition, by designing each of the radiation slot structure and the signal coupling line to partially overlap or interlace each other, and designing the plurality of signal coupling lines to each have a coupling interval with the second conductor layer, The coupling distance is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band. Furthermore, a conjoined slot structure is designed to be formed on the second conductor layer, and the conjoined slot structure is connected to the plurality of radiation slot structures. In this way, the conjoined slot structure can effectively reduce the equivalent parasitic capacitance effect of the multi-antenna array, and successfully compensate for the coupling capacitance effect generated between the first conductor layer and the second conductor layer. Therefore, each of the slot antennas can be successfully excited to generate at least one well-matched resonance mode covering at least one same first communication frequency band, and the distance of the first spacing only needs to be within the lowest operating frequency of the first communication frequency band Between 0.001 wavelength and 0.038 wavelength. Therefore, the present invention can successfully achieve good matching, high integration, and thinness.

第1A圖為本揭露一實施例高整合度多天線陣列1之結構圖。如第1A圖所示,該高整合度多天線陣列1,包含一第一導體層11、一第二導體層12、複數個連體導通結構111、112、113、114、115、116、117、118與複數個槽孔天線13、14以及一連體槽孔結構121。該第二導體層12與該第一導體層11之間具有一第一間距d1。該複數個連體導通結構111、112、113、114、115、116、117、118均電氣連接該第一導體層11以及該第二導體層12。該複數個連體導通結構111、112、113、114、115、116、117、118係為導體線。其中,各該槽孔天線13、14均各自具有一輻射槽孔結構131、141與一訊號耦合線132、142。該輻射槽孔結構131與該訊號耦合線132彼此交錯,該輻射槽孔結構141與該訊號耦合線142彼此部分重疊。該複數個輻射槽孔結構131、141均形成於該第二導體層12。該複數個訊號耦合線132、142均各自與該第二導體層12之間具有一耦合間距d3132、d4142。該複數個訊號耦合線132、142均各自具有一訊號饋入端1321、1421。該訊號饋入端1321、1421均各自電氣耦接於一訊號源13211、14211,該訊號源13211、14211可為阻抗匹配電路、傳輸線、微帶傳輸線、夾心帶線、基板整合波導、共面波導、放大器電路、積體電路晶片或射頻模組。各該槽孔天線13、14均各自被激發產生至少一共振模態133、143(如第1B圖所示),該複數個共振模態133、143涵蓋至少一相同的第一通訊系統頻段17(如第1B圖所示)。該連體槽孔結構121形成於該第二導體層12,並且其連通該複數個輻射槽孔結構131、141。該連體槽孔結構121係為多線形槽孔結構,其係由兩個彎折的線形槽孔以及一個直線形槽孔所組成。該第一間距d1之距離介於該第一通訊頻段17最低操作頻率之0.001波長到0.038波長之間。該輻射槽孔結構131形成於該第二導體層12,該訊號耦合線132形成於該第一導體層11,該輻射槽孔結構131與該訊號耦合線132彼此交錯,該訊號耦合線132與該第二導體層12之間具有一耦合間距d3132。該輻射槽孔結構141形成於該第二導體層12,該訊號耦合線142同樣形成於該第二導體層12,該輻射槽孔結構141與該該訊號耦合線142彼此部分重疊,該訊號耦合線142與該第二導體層12之間具有一耦合間距d4142。該耦合間距d3132、d4142之距離介於該第一通訊頻段17最低操作頻率之0.001波長到0.035波長之間。該輻射槽孔結構131具有一開口端1311位於該第二導體層12之一邊緣1221,該開口端1311至該輻射槽孔結構131與該連體槽孔結構121交接處12113具有一開槽孔間距d1331,該開槽孔間距d1331之距離介於該第一通訊頻段17最低操作頻率之0.01波長到0.29波長之間。該輻射槽孔結構141具有一閉口端1412位於該第二導體層12之一邊緣1222,該閉口端1412至該輻射槽孔結構141與該連體槽孔結構121交接處12114具有一閉槽孔間距d1441,該閉槽孔間距d1441之介於或等於該第一通訊頻段17最低操作頻率之0.05波長到0.59波長之間。該訊號耦合線132、142之長度介於該第一通訊頻段17最低操作頻率之0.03波長到0.33波長之間。該第二導體層12與該第一導體層11之間可具有一介質基板或具有一多層介質基板。該連體槽孔結構121也可為線形槽孔結構、方環形槽孔結構、圓環形槽孔結構、橢圓環形槽孔結構、菱環形槽孔結構、圓形槽孔結構、半圓形槽孔結構、橢圓形槽孔結構、半橢圓形槽孔結構、方形槽孔結構、矩形槽孔結構、菱形槽孔結構、平行四邊形槽孔結構、多邊形槽孔結構或其組合。FIG. 1A is a structural diagram of a highly integrated multi-antenna array 1 according to an embodiment of the disclosure. As shown in Figure 1A, the highly integrated multi-antenna array 1 includes a first conductor layer 11, a second conductor layer 12, and a plurality of connected conductive structures 111, 112, 113, 114, 115, 116, 117 , 118 and a plurality of slot antennas 13, 14 and a conjoined slot structure 121. There is a first distance d1 between the second conductive layer 12 and the first conductive layer 11. The plurality of connected conductive structures 111, 112, 113, 114, 115, 116, 117, and 118 are all electrically connected to the first conductor layer 11 and the second conductor layer 12. The plurality of connected conductive structures 111, 112, 113, 114, 115, 116, 117, and 118 are conductor wires. Each of the slot antennas 13 and 14 has a radiation slot structure 131 and 141 and a signal coupling line 132 and 142 respectively. The radiation slot structure 131 and the signal coupling line 132 are interlaced with each other, and the radiation slot structure 141 and the signal coupling line 142 are partially overlapped with each other. The plurality of radiation slot structures 131 and 141 are all formed on the second conductor layer 12. Each of the plurality of signal coupling lines 132 and 142 has a coupling distance d3132 and d4142 between each and the second conductor layer 12. Each of the plurality of signal coupling lines 132 and 142 has a signal feeding end 1321 and 1421 respectively. The signal feed ends 1321 and 1421 are each electrically coupled to a signal source 13211, 14211, which can be impedance matching circuit, transmission line, microstrip transmission line, sandwich strip line, substrate integrated waveguide, coplanar waveguide , Amplifier circuit, integrated circuit chip or radio frequency module. Each of the slot antennas 13, 14 is excited to generate at least one resonance mode 133, 143 (as shown in Figure 1B), and the plurality of resonance modes 133, 143 cover at least one same first communication system frequency band 17 (As shown in Figure 1B). The conjoined slot structure 121 is formed on the second conductor layer 12 and is connected to the plurality of radiation slot structures 131 and 141. The conjoined slot structure 121 is a multi-line slot structure, which is composed of two bent linear slot holes and one straight slot hole. The distance of the first spacing d1 is between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 17. The radiating slot structure 131 is formed on the second conductor layer 12, the signal coupling line 132 is formed on the first conductor layer 11, the radiating slot structure 131 and the signal coupling line 132 are interlaced with each other, and the signal coupling line 132 and There is a coupling distance d3132 between the second conductor layers 12. The radiating slot structure 141 is formed on the second conductor layer 12, the signal coupling line 142 is also formed on the second conductor layer 12, the radiating slot structure 141 and the signal coupling line 142 partially overlap each other, and the signal coupling There is a coupling distance d4142 between the line 142 and the second conductive layer 12. The distance between the coupling distances d3132 and d4142 is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 17. The radiation slot structure 131 has an open end 1311 located at an edge 1221 of the second conductor layer 12, and the open end 1311 to the junction 12113 of the radiation slot structure 131 and the connected slot structure 121 has a slot hole The distance d1331 is between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication band 17. The radiation slot structure 141 has a closed end 1412 located at an edge 1222 of the second conductor layer 12, and the closed end 1412 to the junction 12114 of the radiation slot structure 141 and the connected slot structure 121 has a closed slot. The distance d1441, the closed slot distance d1441 is between or equal to 0.05 wavelength to 0.59 wavelength of the lowest operating frequency of the first communication band 17. The length of the signal coupling lines 132 and 142 is between 0.03 wavelength and 0.33 wavelength of the lowest operating frequency of the first communication band 17. There may be a dielectric substrate or a multilayer dielectric substrate between the second conductive layer 12 and the first conductive layer 11. The conjoined slot structure 121 can also be a linear slot structure, a square ring slot structure, a circular ring slot structure, an elliptical ring slot structure, a diamond ring slot structure, a circular slot structure, or a semicircular slot. Hole structure, elliptical slot structure, semi-elliptical slot structure, square slot structure, rectangular slot structure, rhombus slot structure, parallelogram slot structure, polygon slot structure or a combination thereof.

為了能夠成功達成高整合度以及薄型化的功效。本發明所提出該高整合度多天線陣列1,其藉由設計該複數個輻射槽孔結構131、141均形成於該第二導體層12,並設計該複數個連體導通結構111、112、113、114、115、116、117、118均電氣連接該第一導體層11以及該第二導體層12,來致使該第一導體層11成功同時等效形成一多天線陣列之輻射能量反射層以及一鄰近耦合能量屏蔽層,因此該第一導體層11能夠成功導引多天線陣列輻射能量遠離鄰近耦合能量干擾。除此之外,其藉由設計各該輻射槽孔結構131、141與該訊號耦合線132、142均彼此部分重疊或交錯,以及設計該複數個訊號耦合線132、142均各自與該第二導體層12之間具有一耦合間距d3132、d4142,該耦合間距d3132、d4142之距離介於該第一通訊頻段17最低操作頻率之0.001波長到0.035波長之間。並且設計一連體槽孔結構121形成於該第二導體層12,該連體槽孔結構121連通該複數個輻射槽孔結構131、141。如此該連體槽孔結構121能夠有效降低該多天線陣列之等效寄生電容效應,成功補償藉該第一導體層11與該第二導體層12之間產生的耦合電容效應。因此各該槽孔天線13、14均能成功被激發產生至少一匹配良好的共振模態133、143涵蓋至少一相同的第一通訊頻段17,並且該第一間距d1之距離僅需介於該第一通訊頻段17最低操作頻率之0.001波長到0.038波長之間。因此本發明能成功達成良好匹配以及高整合度與薄型化的功效。In order to successfully achieve high integration and thinness. The highly integrated multi-antenna array 1 proposed by the present invention is designed by designing the plurality of radiation slot structures 131, 141 to be formed on the second conductor layer 12, and designing the plurality of connected conductive structures 111, 112, 113, 114, 115, 116, 117, and 118 are all electrically connected to the first conductor layer 11 and the second conductor layer 12, so that the first conductor layer 11 successfully forms a radiation energy reflection layer of a multi-antenna array at the same time. And an adjacent coupling energy shielding layer, so the first conductor layer 11 can successfully guide the radiation energy of the multi-antenna array away from adjacent coupling energy interference. In addition, by designing that each of the radiation slot structures 131, 141 and the signal coupling lines 132, 142 are partially overlapped or interlaced with each other, and designing the plurality of signal coupling lines 132, 142 to be each connected to the second There is a coupling interval d3132, d4142 between the conductor layers 12, and the distance between the coupling interval d3132 and d4142 is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 17. Furthermore, a conjoined slot structure 121 is designed to be formed on the second conductor layer 12, and the conjoined slot structure 121 is connected to the plurality of radiation slot structures 131 and 141. In this way, the conjoined slot structure 121 can effectively reduce the equivalent parasitic capacitance effect of the multi-antenna array, and successfully compensate the coupling capacitance effect generated between the first conductor layer 11 and the second conductor layer 12. Therefore, each of the slot antennas 13, 14 can be successfully excited to generate at least one well-matched resonance mode 133, 143 covering at least one same first communication frequency band 17, and the distance between the first spacing d1 only needs to be between the The lowest operating frequency of the first communication band 17 is between 0.001 wavelength and 0.038 wavelength. Therefore, the present invention can successfully achieve good matching, high integration and thinness.

第1B圖為本揭露實施例高整合度多天線陣列1之返回損失與隔離度曲線圖。其中,該槽孔天線13之返回損失曲線為1332,該槽孔天線14之返回損失曲線為1432,該槽孔天線13與槽孔天線14之隔離度曲線為1314。其選擇下列尺寸進行實驗:該第一間距d1之距離約為1.6mm;該開槽孔間距d1331之距離約為10.3 mm;該閉槽孔間距d1441之距離約為21.3mm;該耦合間距d3132之距離約為1.6mm;該耦合間距d4142之距離約為0.6mm;該訊號耦合線132之長度約為13mm;該訊號耦合線142之長度約為10 mm;該連體槽孔結構121之該彎折線形槽孔之長度約為23mm;該連體槽孔結構121之該直線形槽孔之長度約為14mm。如第1B圖所示,該槽孔天線13激發產生一匹配良好的共振模態133,該槽孔天線14激發產生一匹配良好的共振模態143,該共振模態133與共振模態143涵蓋至少一相同的第一通訊頻段17。在本實施例中,該第一通訊頻段17之頻段範圍為3400MHz~3600MHz,該第一通訊頻段17之最低操作頻率為3400MHz。如第1B圖所示,該槽孔天線13與槽孔天線14之隔離度曲線1314,於該第一通訊頻段17中均高於10dB,驗證能達成不錯的阻抗匹配與隔離度表現。FIG. 1B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 1 according to the embodiment of the disclosure. The return loss curve of the slot antenna 13 is 1332, the return loss curve of the slot antenna 14 is 1432, and the isolation curve of the slot antenna 13 and the slot antenna 14 is 1314. The following dimensions were selected for the experiment: the distance of the first spacing d1 was about 1.6mm; the distance of the slotted hole spacing d1331 was about 10.3 mm; the distance of the closed slot spacing d1441 was about 21.3mm; the coupling spacing d3132 The distance is about 1.6mm; the distance of the coupling interval d4142 is about 0.6mm; the length of the signal coupling line 132 is about 13mm; the length of the signal coupling line 142 is about 10 mm; the bending of the conjoined slot structure 121 The length of the broken-line slot is about 23mm; the length of the straight slot of the conjoined slot structure 121 is about 14mm. As shown in Figure 1B, the slot antenna 13 is excited to generate a well-matched resonance mode 133, and the slot antenna 14 is excited to generate a well-matched resonance mode 143. The resonance mode 133 and the resonance mode 143 cover At least one identical first communication frequency band 17. In this embodiment, the frequency range of the first communication frequency band 17 is 3400 MHz~3600 MHz, and the lowest operating frequency of the first communication frequency band 17 is 3400 MHz. As shown in Fig. 1B, the isolation curve 1314 of the slot antenna 13 and the slot antenna 14 is higher than 10dB in the first communication frequency band 17, which proves that good impedance matching and isolation performance can be achieved.

第1B圖所涵蓋之通訊系統頻段操作、實驗數據,僅是為了實驗證明第1A圖中本揭露一實施例高整合度多天線陣列1之技術功效。並未用來限制本揭露高整合度多天線陣列1於實際應用情況所能涵蓋的通訊頻段操作、應用與規格。本揭露高整合度多天線陣列1可以單一組或多組實現於通訊裝置當中,該通訊裝置可為行動通訊裝置、無線通訊裝置、行動運算裝置、電腦裝置、電信設備、基地台設備、無線橋接器設備、網路設備或電腦或網路的週邊設備等。The frequency band operation and experimental data of the communication system covered in Fig. 1B are only for experimental verification of the technical effect of the embodiment of the highly integrated multi-antenna array 1 disclosed in Fig. 1A. It is not used to limit the operation, application, and specifications of the communication frequency band that the highly integrated multi-antenna array 1 of the present disclosure can cover in actual applications. The highly integrated multi-antenna array 1 of the present disclosure can be implemented in a single group or multiple groups in a communication device. The communication device can be a mobile communication device, a wireless communication device, a mobile computing device, a computer device, a telecommunication device, a base station device, and a wireless bridge. Computer or network peripheral equipment, etc.

第2A圖為本揭露一實施例高整合度多天線陣列2之結構圖。如第2A圖所示,該高整合度多天線陣列2,包含一第一導體層21、一第二導體層22、複數個連體導通結構211、212、213、214、215、216、217、218、219與複數個槽孔天線23、24以及一連體槽孔結構221。該第二導體層22與該第一導體層21之間具有一第一間距d1。該第二導體層22與該第一導體層21之間具有一多層介質基板29。該複數個連體導通結構211、212、213、214、215、216、217、218、219均電氣連接該第一導體層21以及該第二導體層22。該複數個連體導通結構211、212、213、214、215、216、217、218、219係為導體通孔。其中,各該槽孔天線23、24均各自具有一輻射槽孔結構231、241與一訊號耦合線232、242。各該輻射槽孔結構231、241與該訊號耦合線232、242均彼此交錯。該複數個輻射槽孔結構231、241均形成於該第二導體層22。該複數個訊號耦合線232、242均各自與該第二導體層22之間具有一耦合間距d3132、d4142。該複數個訊號耦合線232、242均各自具有一訊號饋入端2321、2421。該訊號饋入端2321、2421均各自電氣耦接於一訊號源23211、24211,該訊號源23211、24211可為阻抗匹配電路、傳輸線、微帶傳輸線、夾心帶線、基板整合波導、共面波導、放大器電路、積體電路晶片或射頻模組。各該槽孔天線23、24均各自被激發產生至少一共振模態233、243(如第2B圖所示),該複數個共振模態233、243涵蓋至少一相同的第一通訊系統頻段27(如第2B圖所示)。該連體槽孔結構221形成於該第二導體層22,並且其連通該複數個輻射槽孔結構231、241。該連體槽孔結構221係為方形槽孔結構。該第一間距d1之距離介於該第一通訊頻段27最低操作頻率之0.001波長到0.038波長之間。該輻射槽孔結構231形成於該第二導體層22,該訊號耦合線232整合於該多層介質基板29並位於該第一導體層21與該第二導體層22之間。該輻射槽孔結構231與該訊號耦合線232彼此交錯,該訊號耦合線232與該第二導體層22之間具有一耦合間距d3132。該輻射槽孔結構241形成於該第二導體層22,該訊號耦合線242同樣整合於該多層介質基板29並位於該第一導體層21與該第二導體層22之間。該輻射槽孔結構241與該訊號耦合線242彼此交錯,該訊號耦合線242與該第二導體層22之間具有一耦合間距d4142。該耦合間距d3132、d4142之距離介於該第一通訊頻段27最低操作頻率之0.001波長到0.035波長之間。該輻射槽孔結構231具有一開口端2311位於該第二導體層22之一邊緣2221,該開口端2311至該輻射槽孔結構231與該連體槽孔結構221交接處22113具有一開槽孔間距d2331,該開槽孔間距d2331之距離介於該第一通訊頻段27最低操作頻率之0.01波長到0.29波長之間。該輻射槽孔結構241具有一開口端2411位於該第二導體層22之一邊緣2222,該開口端2411至該輻射槽孔結構241與該連體槽孔結構221交接處22114具有一開槽孔間距d2431,該開槽孔間距d2431之距離介等於該第一通訊頻段27最低操作頻率之0.01波長到0.29波長之間。該訊號耦合線232、242之長度介於該第一通訊頻段27最低操作頻率之0.03波長到0.33波長之間。該第二導體層22上方可具有一介質基板,該第一導體層21下方也可具有一介質基板。該連體槽孔結構221也可為線形槽孔結構、多線形槽孔結構、方環形槽孔結構、圓環形槽孔結構、橢圓環形槽孔結構、菱環形槽孔結構、圓形槽孔結構、半圓形槽孔結構、橢圓形槽孔結構、半橢圓形槽孔結構、矩形槽孔結構、菱形槽孔結構、平行四邊形槽孔結構、多邊形槽孔結構或其組合。FIG. 2A is a structural diagram of a highly integrated multi-antenna array 2 according to an embodiment of the disclosure. As shown in FIG. 2A, the highly integrated multi-antenna array 2 includes a first conductor layer 21, a second conductor layer 22, and a plurality of connected conductive structures 211, 212, 213, 214, 215, 216, 217 , 218, 219, a plurality of slot antennas 23, 24, and a conjoined slot structure 221. There is a first distance d1 between the second conductive layer 22 and the first conductive layer 21. A multilayer dielectric substrate 29 is provided between the second conductor layer 22 and the first conductor layer 21. The plurality of connected conductive structures 211, 212, 213, 214, 215, 216, 217, 218, and 219 are electrically connected to the first conductor layer 21 and the second conductor layer 22. The plurality of connected conductive structures 211, 212, 213, 214, 215, 216, 217, 218, and 219 are conductor vias. Each of the slot antennas 23 and 24 has a radiation slot structure 231 and 241 and a signal coupling line 232 and 242 respectively. The radiation slot structures 231 and 241 and the signal coupling lines 232 and 242 are interlaced with each other. The plurality of radiation slot structures 231 and 241 are all formed on the second conductor layer 22. Each of the plurality of signal coupling lines 232 and 242 has a coupling distance d3132 and d4142 between each and the second conductor layer 22. Each of the plurality of signal coupling lines 232 and 242 has a signal feeding terminal 2321 and 2421. The signal feed ends 2321, 2421 are electrically coupled to a signal source 23211, 24211, which can be impedance matching circuit, transmission line, microstrip transmission line, sandwich strip line, substrate integrated waveguide, coplanar waveguide , Amplifier circuit, integrated circuit chip or radio frequency module. Each of the slot antennas 23, 24 is excited to generate at least one resonance mode 233, 243 (as shown in Fig. 2B), and the plurality of resonance modes 233, 243 cover at least one same first communication system frequency band 27 (As shown in Figure 2B). The conjoined slot structure 221 is formed on the second conductor layer 22 and is connected to the plurality of radiation slot structures 231 and 241. The connected slot structure 221 is a square slot structure. The distance of the first spacing d1 is between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 27. The radiation slot structure 231 is formed on the second conductor layer 22, and the signal coupling line 232 is integrated in the multilayer dielectric substrate 29 and is located between the first conductor layer 21 and the second conductor layer 22. The radiation slot structure 231 and the signal coupling line 232 are interlaced with each other, and there is a coupling distance d3132 between the signal coupling line 232 and the second conductor layer 22. The radiation slot structure 241 is formed on the second conductor layer 22, and the signal coupling line 242 is also integrated in the multilayer dielectric substrate 29 and is located between the first conductor layer 21 and the second conductor layer 22. The radiation slot structure 241 and the signal coupling line 242 are interlaced with each other, and there is a coupling distance d4142 between the signal coupling line 242 and the second conductor layer 22. The distance between the coupling spacings d3132 and d4142 is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 27. The radiation slot structure 231 has an open end 2311 located at an edge 2221 of the second conductor layer 22, and the open end 2311 to the junction 22113 of the radiation slot structure 231 and the connected slot structure 221 has a slot hole The distance d2331 is between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication band 27. The radiation slot structure 241 has an open end 2411 at an edge 2222 of the second conductor layer 22, and the open end 2411 to the junction 22114 of the radiation slot structure 241 and the conjoined slot structure 221 has a slotted hole The distance d2431 is between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication frequency band 27. The length of the signal coupling lines 232 and 242 is between 0.03 wavelength and 0.33 wavelength of the lowest operating frequency of the first communication band 27. A dielectric substrate may be provided above the second conductive layer 22, and a dielectric substrate may also be provided below the first conductive layer 21. The conjoined slot structure 221 can also be a linear slot structure, a multi-line slot structure, a square ring slot structure, a circular ring slot structure, an elliptical ring slot structure, a diamond ring slot structure, and a circular slot structure. Structure, semi-circular slot structure, elliptical slot structure, semi-elliptical slot structure, rectangular slot structure, rhombus slot structure, parallelogram slot structure, polygon slot structure or a combination thereof.

第2A圖中本揭露一實施例該高整合度多天線陣列2,雖然其各部分的結構形狀與位置安排與該高整合度多天線陣列1並不完相同。然而該高整合度多天線陣列2,其同樣藉由設計該複數個輻射槽孔結構231、241均形成於該第二導體層22,並設計該複數個連體導通結構211、212、213、214、215、216、217、218、219均電氣連接該第一導體層21以及該第二導體層22,來致使該第一導體層21成功同時等效形成一多天線陣列之輻射能量反射層以及一鄰近耦合能量屏蔽層,因此該第一導體層21能夠成功導引多天線陣列輻射能量遠離鄰近耦合能量干擾。除此之外,其藉由設計各該輻射槽孔結構231、241與該訊號耦合線232、242均彼此交錯,以及設計該複數個訊號耦合線232、242均各自與該第二導體層22之間具有一耦合間距d3132、d4142,該耦合間距d3132、d4142之距離介於該第一通訊頻段27最低操作頻率之0.001波長到0.035波長之間。並且設計一連體槽孔結構221形成於該第二導體層22,該連體槽孔結構221連通該複數個輻射槽孔結構231、241。如此該連體槽孔結構221能夠有效降低該多天線陣列之等效寄生電容效應,成功補償藉該第一導體層21與該第二導體層22之間產生的耦合電容效應。因此各該槽孔天線23、24均能成功被激發產生至少一匹配良好的共振模態233、243涵蓋至少一相同的第一通訊頻段27(如第2B圖所示),並且該第一間距d1之距離僅需介於該第一通訊頻段27最低操作頻率之0.001波長到0.038波長之間。因此本發明多天線陣列2能成功達成良好匹配以及高整合度與薄型化的功效。FIG. 2A shows an embodiment of the highly integrated multi-antenna array 2, although the structure, shape and position arrangement of its parts are not exactly the same as the highly integrated multi-antenna array 1. However, the highly integrated multi-antenna array 2 is also formed by designing the plurality of radiation slot structures 231, 241 to be formed on the second conductor layer 22, and designing the plurality of connected conductive structures 211, 212, 213, 214, 215, 216, 217, 218, 219 are all electrically connected to the first conductor layer 21 and the second conductor layer 22, so that the first conductor layer 21 successfully forms a radiation energy reflection layer of a multi-antenna array simultaneously And an adjacent coupling energy shielding layer, so the first conductor layer 21 can successfully guide the radiation energy of the multi-antenna array away from adjacent coupling energy interference. In addition, by designing the radiation slot structures 231, 241 and the signal coupling lines 232, 242 to be interlaced with each other, and designing the plurality of signal coupling lines 232, 242 to be connected to the second conductor layer 22. There is a coupling interval d3132, d4142 therebetween, and the distance between the coupling interval d3132 and d4142 is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 27. Furthermore, a conjoined slot structure 221 is designed to be formed on the second conductor layer 22, and the conjoined slot structure 221 is connected to the plurality of radiation slot structures 231 and 241. In this way, the conjoined slot structure 221 can effectively reduce the equivalent parasitic capacitance effect of the multi-antenna array, and successfully compensate for the coupling capacitance effect generated between the first conductor layer 21 and the second conductor layer 22. Therefore, each of the slot antennas 23, 24 can be successfully excited to produce at least one well-matched resonance mode 233, 243 covering at least one same first communication frequency band 27 (as shown in Figure 2B), and the first distance The distance of d1 only needs to be between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 27. Therefore, the multi-antenna array 2 of the present invention can successfully achieve good matching, high integration, and thinness.

第2B圖為本揭露實施例高整合度多天線陣列2之返回損失與隔離度曲線圖。其中,該槽孔天線23之返回損失曲線為2332,該槽孔天線24之返回損失曲線為2432,該槽孔天線23與槽孔天線24之隔離度曲線為2324。其選擇下列尺寸進行實驗:該第一間距d1之距離約為1mm;該開槽孔間距d2331之距離約為8.2 mm;該開槽孔間距d2431之距離約為8.2mm;該耦合間距d3132之距離約為0.3mm;該耦合間距d4142之距離約為0.3mm;該訊號耦合線232之長度約為15mm;該訊號耦合線242之長度約為15 mm;該連體槽孔結構221之該矩形槽孔結構之面積約為327.6 mm2。如第2B圖所示,該槽孔天線23激發產生一匹配良好的共振模態233,該槽孔天線24激發產生一匹配良好的共振模態243,該共振模態233與共振模態243涵蓋至少一相同的第一通訊頻段27。在本實施例中,該第一通訊頻段27之頻段範圍為3300MHz~3800 MHz,該第一通訊頻段27之最低操作頻率為3300MHz。如第2B圖所示,該槽孔天線23與槽孔天線24之隔離度曲線2324,於該第一通訊頻段27中均高於11dB,驗證能達成不錯的阻抗匹配與隔離度表現。FIG. 2B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 2 according to the embodiment of the disclosure. The return loss curve of the slot antenna 23 is 2332, the return loss curve of the slot antenna 24 is 2432, and the isolation curve of the slot antenna 23 and the slot antenna 24 is 2324. The following dimensions were selected for the experiment: the distance of the first spacing d1 was about 1mm; the distance of the slotted hole spacing d2331 was about 8.2mm; the distance of the slotted hole spacing d2431 was about 8.2mm; the distance of the coupling spacing d3132 The length of the coupling distance d4142 is about 0.3 mm; the length of the signal coupling line 232 is about 15 mm; the length of the signal coupling line 242 is about 15 mm; the rectangular slot of the conjoined slot structure 221 The area of the hole structure is approximately 327.6 mm2. As shown in Figure 2B, the slot antenna 23 is excited to generate a well-matched resonance mode 233, and the slot antenna 24 is excited to generate a well-matched resonance mode 243. The resonance mode 233 and the resonance mode 243 cover At least one identical first communication frequency band 27. In this embodiment, the frequency range of the first communication frequency band 27 is 3300 MHz~3800 MHz, and the lowest operating frequency of the first communication frequency band 27 is 3300 MHz. As shown in FIG. 2B, the isolation curve 2324 of the slot antenna 23 and the slot antenna 24 is higher than 11dB in the first communication frequency band 27, which proves that good impedance matching and isolation performance can be achieved.

第2B圖所涵蓋之通訊系統頻段操作、實驗數據,僅是為了實驗證明第2A圖中本揭露一實施例高整合度多天線陣列2之技術功效。並未用來限制本揭露高整合度多天線陣列2於實際應用情況所能涵蓋的通訊頻段操作、應用與規格。本揭露高整合度多天線陣列2可以單一組或多組實現於通訊裝置當中,該通訊裝置可為行動通訊裝置、無線通訊裝置、行動運算裝置、電腦裝置、電信設備、基地台設備、無線橋接器設備、網路設備或電腦或網路的週邊設備等。The frequency band operation and experimental data of the communication system covered in Fig. 2B are only for experimental verification of the technical effects of the embodiment of the highly integrated multi-antenna array 2 disclosed in Fig. 2A. It is not used to limit the operation, application, and specifications of the communication frequency band that the highly integrated multi-antenna array 2 of the present disclosure can cover in actual applications. The highly integrated multi-antenna array 2 of the present disclosure can be implemented in a single group or multiple groups in a communication device. The communication device can be a mobile communication device, a wireless communication device, a mobile computing device, a computer device, a telecommunication device, a base station device, and a wireless bridge. Computer or network peripheral equipment, etc.

第3A圖為本揭露一實施例高整合度多天線陣列3之結構圖。如第3A圖所示,該高整合度多天線陣列3,包含一第一導體層31、一第二導體層32、複數個連體導通結構311、312、313、314、315、316、317、318、319、319、3110與複數個槽孔天線33、34以及一連體槽孔結構321。該第二導體層32與該第一導體層31之間具有一第一間距d1。該第二導體層32與該第一導體層31之間具有一多層介質基板39。該複數個連體導通結構311、312、313、314、315、316、317、318、319、3110均電氣連接該第一導體層31以及該第二導體層32。該複數個連體導通結構311、312、313、314、315、316、317、318、319、3110係為導體通孔。其中,各該槽孔天線33、34均各自具有一輻射槽孔結構331、341與一訊號耦合線332、342。該輻射槽孔結構331與該訊號耦合線332彼此交錯,該輻射槽孔結構341與該訊號耦合線342彼此部分重疊。該複數個輻射槽孔結構331、341均形成於該第二導體層32。該複數個訊號耦合線332、342均各自與該第二導體層32之間具有一耦合間距d3132、d4142。該複數個訊號耦合線332、342均各自具有一訊號饋入端3321、3421。該訊號饋入端3321、3421均各自電氣耦接於一訊號源33211、34211,該訊號源33211、34211可為阻抗匹配電路、傳輸線、微帶傳輸線、夾心帶線、基板整合波導、共面波導、放大器電路、積體電路晶片或射頻模組。各該槽孔天線33、34均各自被激發產生至少一共振模態333、343(如第3B圖所示),該複數個共振模態333、343涵蓋至少一相同的第一通訊系統頻段37(如第3B圖所示)。該連體槽孔結構321形成於該第二導體層32,並且其連通該複數個輻射槽孔結構331、341。該連體槽孔結構321係為一橢圓環形槽孔結構。該橢圓環形槽孔結構於該第二導體層32包圍形成一橢圓形導體區域,該橢圓形導體區域也可電氣耦接其他訊號源或電路。該第一間距d1之距離介於該第一通訊頻段37最低操作頻率之0.001波長到0.038波長之間。該輻射槽孔結構331形成於該第二導體層32,該訊號耦合線332整合於該多層介質基板39並位於該第一導體層31與該第二導體層32之間。該輻射槽孔結構331與該訊號耦合線332彼此交錯,該訊號耦合線332與該第二導體層32之間具有一耦合間距d3132。該輻射槽孔結構341形成於該第二導體層32,該訊號耦合線342同樣形成於該第二導體層32。該輻射槽孔結構341與該訊號耦合線342部分重疊,該訊號耦合線342與該第二導體層32之間具有一耦合間距d4142。該耦合間距d3132、d4142之距離介於該第一通訊頻段37最低操作頻率之0.001波長到0.035波長之間。該輻射槽孔結構331具有一開口端3311位於該第二導體層32之一邊緣3221,該開口端3311至該輻射槽孔結構331與該連體槽孔結構321交接處32113具有一開槽孔間距d3331,該開槽孔間距d3331之距離介於該第一通訊頻段37最低操作頻率之0.01波長到0.29波長之間。該輻射槽孔結構341具有一開口端3411位於該第二導體層32之一邊緣3222,該開口端3411至該輻射槽孔結構341與該連體槽孔結構321交接處32114具有一開槽孔間距d3431,該開槽孔間距d3431之距離介於該第一通訊頻段37最低操作頻率之0.01波長到0.29波長之間。該訊號耦合線332、342之長度介於該第一通訊頻段37最低操作頻率之0.03波長到0.33波長之間。該第二導體層32上方可具有一介質基板,該第一導體層31下方也可具有一介質基板。該連體槽孔結構321也可為線形槽孔結構、多線形槽孔結構、方環形槽孔結構、圓環形槽孔結構、菱環形槽孔結構、圓形槽孔結構、半圓形槽孔結構、橢圓形槽孔結構、半橢圓形槽孔結構、方形槽孔結構、矩形槽孔結構、菱形槽孔結構、平行四邊形槽孔結構、多邊形槽孔結構或其組合。FIG. 3A is a structural diagram of a highly integrated multi-antenna array 3 according to an embodiment of the disclosure. As shown in FIG. 3A, the highly integrated multi-antenna array 3 includes a first conductor layer 31, a second conductor layer 32, and a plurality of connected conductive structures 311, 312, 313, 314, 315, 316, 317 , 318, 319, 319, 3110 and a plurality of slot antennas 33, 34 and a conjoined slot structure 321. There is a first distance d1 between the second conductive layer 32 and the first conductive layer 31. There is a multilayer dielectric substrate 39 between the second conductive layer 32 and the first conductive layer 31. The plurality of connected conductive structures 311, 312, 313, 314, 315, 316, 317, 318, 319, 3110 are all electrically connected to the first conductor layer 31 and the second conductor layer 32. The plurality of connected conductive structures 311, 312, 313, 314, 315, 316, 317, 318, 319, and 3110 are conductor through holes. Wherein, each of the slot antennas 33 and 34 has a radiation slot structure 331 and 341 and a signal coupling line 332 and 342 respectively. The radiation slot structure 331 and the signal coupling line 332 are interlaced with each other, and the radiation slot structure 341 and the signal coupling line 342 are partially overlapped with each other. The plurality of radiation slot structures 331 and 341 are all formed on the second conductor layer 32. Each of the plurality of signal coupling lines 332 and 342 has a coupling distance d3132 and d4142 between each and the second conductor layer 32. Each of the plurality of signal coupling lines 332 and 342 has a signal feeding end 3321 and 3421 respectively. The signal feed ends 3321 and 3421 are electrically coupled to a signal source 33211, 34211, which can be impedance matching circuits, transmission lines, microstrip transmission lines, sandwich strip lines, substrate integrated waveguides, and coplanar waveguides. , Amplifier circuit, integrated circuit chip or radio frequency module. Each of the slot antennas 33, 34 is excited to generate at least one resonance mode 333, 343 (as shown in Fig. 3B), and the plurality of resonance modes 333, 343 cover at least one same first communication system frequency band 37 (As shown in Figure 3B). The conjoined slot structure 321 is formed on the second conductor layer 32 and is connected to the plurality of radiation slot structures 331 and 341. The connected slot structure 321 is an elliptical annular slot structure. The elliptical ring-shaped slot structure is surrounded by the second conductor layer 32 to form an elliptical conductor area, and the elliptical conductor area can also be electrically coupled to other signal sources or circuits. The distance of the first spacing d1 is between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 37. The radiation slot structure 331 is formed on the second conductive layer 32, and the signal coupling line 332 is integrated in the multilayer dielectric substrate 39 and is located between the first conductive layer 31 and the second conductive layer 32. The radiation slot structure 331 and the signal coupling line 332 are interlaced with each other, and there is a coupling distance d3132 between the signal coupling line 332 and the second conductive layer 32. The radiation slot structure 341 is formed on the second conductor layer 32, and the signal coupling line 342 is also formed on the second conductor layer 32. The radiation slot structure 341 partially overlaps the signal coupling line 342, and there is a coupling distance d4142 between the signal coupling line 342 and the second conductor layer 32. The distance between the coupling spacings d3132 and d4142 is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 37. The radiation slot structure 331 has an open end 3311 located at an edge 3221 of the second conductor layer 32, and the open end 3311 to the junction 32113 of the radiation slot structure 331 and the connected slot structure 321 has a slotted hole The distance d3331 is between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication band 37. The radiation slot structure 341 has an open end 3411 located at an edge 3222 of the second conductor layer 32, and the open end 3411 to the junction 32114 of the radiation slot structure 341 and the connected slot structure 321 has a slotted hole The distance d3431 is between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication band 37. The length of the signal coupling lines 332 and 342 is between 0.03 wavelength and 0.33 wavelength of the lowest operating frequency of the first communication band 37. A dielectric substrate may be provided above the second conductive layer 32, and a dielectric substrate may also be provided below the first conductive layer 31. The connected slot structure 321 can also be a linear slot structure, a multi-line slot structure, a square ring slot structure, a circular ring slot structure, a diamond ring slot structure, a circular slot structure, and a semicircular slot. Hole structure, elliptical slot structure, semi-elliptical slot structure, square slot structure, rectangular slot structure, rhombus slot structure, parallelogram slot structure, polygon slot structure or a combination thereof.

第3A圖中本揭露一實施例該高整合度多天線陣列3,雖然其各部分的結構形狀與位置安排與該高整合度多天線陣列1並不完相同。然而該高整合度多天線陣列3,其同樣藉由設計該複數個輻射槽孔結構331、341均形成於該第二導體層32,並設計該複數個連體導通結構311、312、313、314、315、316、317、318、319、3110均電氣連接該第一導體層31以及該第二導體層32,來致使該第一導體層31成功同時等效形成一多天線陣列之輻射能量反射層以及一鄰近耦合能量屏蔽層,因此該第一導體層31能夠成功導引多天線陣列輻射能量遠離鄰近耦合能量干擾。除此之外,其藉由設計各該輻射槽孔結構331、341與該訊號耦合線332、342均彼此交錯或部分重疊,以及設計該複數個訊號耦合線332、342均各自與該第二導體層32之間具有一耦合間距d3132、d4142,該耦合間距d3132、d4142之距離介於該第一通訊頻段37最低操作頻率之0.001波長到0.035波長之間。並且設計一連體槽孔結構321形成於該第二導體層32,該連體槽孔結構321連通該複數個輻射槽孔結構331、241。如此該連體槽孔結構321能夠有效降低該多天線陣列之等效寄生電容效應,成功補償藉該第一導體層31與該第二導體層32之間產生的耦合電容效應。因此各該槽孔天線33、34均能成功被激發產生至少一匹配良好的共振模態333、343涵蓋至少一相同的第一通訊頻段37(如第3B圖所示),並且該第一間距d1之距離僅需介於該第一通訊頻段37最低操作頻率之0.001波長到0.038波長之間。因此本發明多天線陣列3也能成功達成良好匹配以及高整合度與薄型化的功效。FIG. 3A shows an embodiment of the highly integrated multi-antenna array 3, although the structure, shape and position arrangement of its parts are not completely the same as the highly integrated multi-antenna array 1. However, the highly integrated multi-antenna array 3 is also formed by designing the plurality of radiation slot structures 331, 341 to be formed on the second conductor layer 32, and designing the plurality of connected conductive structures 311, 312, 313, 314, 315, 316, 317, 318, 319, and 3110 are all electrically connected to the first conductor layer 31 and the second conductor layer 32, so that the first conductor layer 31 successfully forms the radiation energy of a multi-antenna array simultaneously The reflective layer and an adjacent coupling energy shielding layer, so the first conductor layer 31 can successfully guide the multi-antenna array radiation energy away from adjacent coupling energy interference. In addition, by designing that each of the radiating slot structures 331, 341 and the signal coupling lines 332, 342 are all interlaced or partially overlapped with each other, and the plurality of signal coupling lines 332, 342 are designed to be connected to the second There is a coupling interval d3132, d4142 between the conductor layers 32, and the distance between the coupling intervals d3132 and d4142 is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 37. Furthermore, a conjoined slot structure 321 is designed to be formed on the second conductor layer 32, and the conjoined slot structure 321 is connected to the plurality of radiation slot structures 331 and 241. In this way, the conjoined slot structure 321 can effectively reduce the equivalent parasitic capacitance effect of the multi-antenna array, and successfully compensate for the coupling capacitance effect generated between the first conductor layer 31 and the second conductor layer 32. Therefore, each of the slot antennas 33, 34 can be successfully excited to produce at least one well-matched resonance mode 333, 343 covering at least one same first communication frequency band 37 (as shown in Figure 3B), and the first distance The distance of d1 only needs to be between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 37. Therefore, the multi-antenna array 3 of the present invention can also successfully achieve good matching, high integration and thinness.

第3B圖為本揭露實施例高整合度多天線陣列3之返回損失與隔離度曲線圖。其中,該槽孔天線33之返回損失曲線為3332,該槽孔天線34之返回損失曲線為3432,該槽孔天線33與槽孔天線34之隔離度曲線為3334。其選擇下列尺寸進行實驗:該第一間距d1之距離約為1.6mm;該開槽孔間距d3331之距離約為8.5 mm;該開槽孔間距d3431之距離約為9.3mm;該耦合間距d3132之距離約為0.8mm;該耦合間距d4142之距離約為0.9mm;該訊號耦合線332之長度約為15mm;該訊號耦合線342之長度約為10 mm;該連體槽孔結構321之該橢圓環形槽孔結構之槽孔環長度約為62.24mm。如第3B圖所示,該槽孔天線33激發產生一匹配良好的共振模態333,該槽孔天線34激發產生一匹配良好的共振模態343,該共振模態333與共振模態343涵蓋至少一相同的第一通訊頻段37。在本實施例中,該第一通訊頻段37之頻段範圍為3300 MHz~3800MHz,該第一通訊頻段37之最低操作頻率為3300 MHz。如第3B圖所示,該槽孔天線33與槽孔天線34之隔離度曲線3324,於該第一通訊頻段37中均高於10dB,驗證能達成不錯的阻抗匹配與隔離度表現。FIG. 3B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 3 according to the embodiment of the disclosure. The return loss curve of the slot antenna 33 is 3332, the return loss curve of the slot antenna 34 is 3432, and the isolation curve of the slot antenna 33 and the slot antenna 34 is 3334. The following dimensions were selected for the experiment: the distance of the first spacing d1 was about 1.6mm; the distance of the slotted hole spacing d3331 was about 8.5mm; the distance of the slotted hole spacing d3431 was about 9.3mm; the coupling spacing d3132 The distance is about 0.8mm; the distance of the coupling interval d4142 is about 0.9mm; the length of the signal coupling line 332 is about 15mm; the length of the signal coupling line 342 is about 10 mm; the ellipse of the conjoined slot structure 321 The length of the slot ring of the annular slot structure is about 62.24mm. As shown in Fig. 3B, the slot antenna 33 is excited to generate a well-matched resonance mode 333, and the slot antenna 34 is excited to generate a well-matched resonance mode 343. The resonance mode 333 and the resonance mode 343 cover At least one same first communication frequency band 37. In this embodiment, the frequency range of the first communication frequency band 37 is 3300 MHz~3800 MHz, and the lowest operating frequency of the first communication frequency band 37 is 3300 MHz. As shown in FIG. 3B, the isolation curve 3324 of the slot antenna 33 and the slot antenna 34 is higher than 10dB in the first communication frequency band 37, which verifies that good impedance matching and isolation performance can be achieved.

第3B圖所涵蓋之通訊系統頻段操作、實驗數據,僅是為了實驗證明第3A圖中本揭露一實施例高整合度多天線陣列3之技術功效。並未用來限制本揭露高整合度多天線陣列3於實際應用情況所能涵蓋的通訊頻段操作、應用與規格。本揭露高整合度多天線陣列3可以單一組或多組實現於通訊裝置當中,該通訊裝置可為行動通訊裝置、無線通訊裝置、行動運算裝置、電腦裝置、電信設備、基地台設備、無線橋接器設備、網路設備或電腦或網路的週邊設備等。The frequency band operation and experimental data of the communication system covered in Fig. 3B are only for experimental verification of the technical effects of the embodiment of the highly integrated multi-antenna array 3 disclosed in Fig. 3A. It is not used to limit the operation, application, and specifications of the communication frequency band that the highly integrated multi-antenna array 3 of the present disclosure can cover in actual applications. The highly integrated multi-antenna array 3 of the present disclosure can be implemented in a single group or multiple groups in a communication device. The communication device may be a mobile communication device, a wireless communication device, a mobile computing device, a computer device, a telecommunication device, a base station device, and a wireless bridge. Computer or network peripheral equipment, etc.

第4A圖為本揭露一實施例高整合度多天線陣列4之結構圖。如第4A圖所示,該高整合度多天線陣列4,包含一第一導體層41、一第二導體層42、複數個連體導通結構411、412、413、414、415、416、417與複數個槽孔天線43、44、45、46以及一連體槽孔結構421。該第二導體層42與該第一導體層41之間具有一第一間距d1。該第二導體層42與該第一導體層41之間具有一多層介質基板49。該複數個連體導通結構411、412、413、414、415、416、417均電氣連接該第一導體層41以及該第二導體層42。該複數個連體導通結構411、412、413、414、415、416、417係為導體通孔。其中,各該槽孔天線43、44、45、46均各自具有一輻射槽孔結構431、441、451、461與一訊號耦合線432、442、452、462。各該輻射槽孔結構431、441、451、461與該訊號耦合線432、442、452、462均彼此交錯。該複數個輻射槽孔結構431、441、451、461均形成於該第二導體層42。該複數個訊號耦合線432、442、452、462均各自與該第二導體層42之間具有一耦合間距d3132、d4142、d5152、d6162。該複數個訊號耦合線432、442、452、462均各自具有一訊號饋入端4321、4421、4521、4621。該訊號饋入端4321、4421、4521、4621均各自電氣耦接於一訊號源43211、44211、45211、46211,該訊號源43211、44211、45211、46211可為阻抗匹配電路、傳輸線、微帶傳輸線、夾心帶線、基板整合波導、共面波導、放大器電路、積體電路晶片或射頻模組。各該槽孔天線43、44、45、46均各自被激發產生至少一共振模態433、443、453、463(如第4B圖所示),該複數個共振模態433、443、453、463涵蓋至少一相同的第一通訊系統頻段47(如第4B圖所示)。該連體槽孔結構421形成於該第二導體層42,並且其連通該複數個輻射槽孔結構431、441、451、461。該連體槽孔結構421係為一圓環形槽孔結構。該圓環形槽孔結構於該第二導體層42包圍形成一圓形導體區域,該圓形導體區域也可電氣耦接其他訊號源或電路。該第一間距d1之距離介於該第一通訊頻段47最低操作頻率之0.001波長到0.038波長之間。該複數個輻射槽孔結構431、441、451、461均形成於該第二導體層42,該複數個訊號耦合線432、442、452、462均整合於該多層介質基板49並位於該第一導體層41與該第二導體層42之間。該輻射槽孔結構431與該訊號耦合線432彼此交錯,該訊號耦合線432與該第二導體層42之間具有一耦合間距d3132。該輻射槽孔結構441與該訊號耦合線442彼此交錯,該訊號耦合線442與該第二導體層42之間具有一耦合間距d4142。該輻射槽孔結構451與該訊號耦合線452彼此交錯,該訊號耦合線452與該第二導體層42之間具有一耦合間距d5152。該輻射槽孔結構461與該訊號耦合線462彼此交錯,該訊號耦合線462與該第二導體層42之間具有一耦合間距d6162。該耦合間距d3132、d4142、d5152、d6162之距離介於該第一通訊頻段47最低操作頻率之0.001波長到0.035波長之間。該輻射槽孔結構431具有一開口端4311位於該第二導體層42之一邊緣4221,該開口端4311至該輻射槽孔結構431與該連體槽孔結構421交接處42113具有一開槽孔間距d4331。該輻射槽孔結構441具有一開口端4411位於該第二導體層42之一邊緣4222,該開口端4411至該輻射槽孔結構441與該連體槽孔結構421交接處42114具有一開槽孔間距d4431。該輻射槽孔結構451具有一開口端4511位於該第二導體層42之一邊緣4223,該開口端4511至該輻射槽孔結構451與該連體槽孔結構421交接處42115具有一開槽孔間距d4531。該輻射槽孔結構461具有一開口端4611位於該第二導體層42之一邊緣4224,該開口端4611至該輻射槽孔結構461與該連體槽孔結構421交會處42116具有一開槽孔間距d4631。各該開槽孔間距d4331、d4431、d4531、d4631之距離介於該第一通訊頻段47最低操作頻率之0.01波長到0.29波長。該訊號耦合線432、442、452、462之長度介於該第一通訊頻段47最低操作頻率之0.03波長到0.33波長之間。該第二導體層42上方可具有一介質基板,該第一導體層41下方也可具有一介質基板。該連體槽孔結構421也可為線形槽孔結構、多線形槽孔結構、方環形槽孔結構、橢圓環形槽孔結構、菱環形槽孔結構、圓形槽孔結構、半圓形槽孔結構、橢圓形槽孔結構、半橢圓形槽孔結構、方形槽孔結構、矩形槽孔結構、菱形槽孔結構、平行四邊形槽孔結構、多邊形槽孔結構或其組合。FIG. 4A is a structural diagram of a highly integrated multi-antenna array 4 according to an embodiment of the disclosure. As shown in FIG. 4A, the highly integrated multi-antenna array 4 includes a first conductor layer 41, a second conductor layer 42, and a plurality of connected conductive structures 411, 412, 413, 414, 415, 416, 417 And a plurality of slot antennas 43, 44, 45, 46 and a connected slot structure 421. There is a first distance d1 between the second conductive layer 42 and the first conductive layer 41. There is a multilayer dielectric substrate 49 between the second conductive layer 42 and the first conductive layer 41. The plurality of conjoined conductive structures 411, 412, 413, 414, 415, 416, and 417 are all electrically connected to the first conductive layer 41 and the second conductive layer 42. The plurality of connected conductive structures 411, 412, 413, 414, 415, 416, and 417 are conductor vias. Each of the slot antennas 43, 44, 45, 46 has a radiation slot structure 431, 441, 451, 461 and a signal coupling line 432, 442, 452, 462. The radiation slot structures 431, 441, 451, and 461 and the signal coupling lines 432, 442, 452, and 462 are all interlaced with each other. The plurality of radiation slot structures 431, 441, 451, and 461 are all formed on the second conductive layer 42. Each of the plurality of signal coupling lines 432, 442, 452, and 462 has a coupling distance d3132, d4142, d5152, and d6162 between each and the second conductor layer 42. Each of the plurality of signal coupling lines 432, 442, 452, 462 has a signal feed-in terminal 4321, 4421, 4521, 4621. The signal feed-in terminals 4321, 4421, 4521, and 4621 are electrically coupled to a signal source 43211, 44211, 45211, 46211, and the signal sources 43211, 44211, 45211, 46211 can be impedance matching circuits, transmission lines, or microstrip transmission lines. , Sandwich strip line, substrate integrated waveguide, coplanar waveguide, amplifier circuit, integrated circuit chip or radio frequency module. Each of the slot antennas 43, 44, 45, 46 is excited to generate at least one resonance mode 433, 443, 453, 463 (as shown in Figure 4B), and the plurality of resonance modes 433, 443, 453, 463 covers at least one same first communication system frequency band 47 (as shown in Fig. 4B). The conjoined slot structure 421 is formed on the second conductor layer 42 and is connected to the plurality of radiation slot structures 431, 441, 451, 461. The connected slot structure 421 is an annular slot structure. The annular slot structure surrounds the second conductor layer 42 to form a circular conductor area, and the circular conductor area can also be electrically coupled to other signal sources or circuits. The distance of the first spacing d1 is between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 47. The plurality of radiation slot structures 431, 441, 451, and 461 are all formed on the second conductor layer 42, and the plurality of signal coupling lines 432, 442, 452, and 462 are all integrated on the multilayer dielectric substrate 49 and located on the first conductor layer. Between the conductor layer 41 and the second conductor layer 42. The radiation slot structure 431 and the signal coupling line 432 are interlaced with each other, and there is a coupling distance d3132 between the signal coupling line 432 and the second conductive layer 42. The radiation slot structure 441 and the signal coupling line 442 are interlaced with each other, and there is a coupling distance d4142 between the signal coupling line 442 and the second conductive layer 42. The radiation slot structure 451 and the signal coupling line 452 are interlaced with each other, and there is a coupling distance d5152 between the signal coupling line 452 and the second conductive layer 42. The radiation slot structure 461 and the signal coupling line 462 are interlaced with each other, and there is a coupling distance d6162 between the signal coupling line 462 and the second conductor layer 42. The coupling distances d3132, d4142, d5152, and d6162 are between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 47. The radiation slot structure 431 has an open end 4311 located at an edge 4221 of the second conductor layer 42, and the open end 4311 to the junction 42113 of the radiation slot structure 431 and the connected slot structure 421 has a slot hole Spacing d4331. The radiation slot structure 441 has an open end 4411 located at an edge 4222 of the second conductor layer 42. The open end 4411 has a slotted hole at the junction 42114 of the radiation slot structure 441 and the connected slot structure 421 Spacing d4431. The radiation slot structure 451 has an open end 4511 located at an edge 4223 of the second conductor layer 42. The open end 4511 has a slotted hole at the junction 42115 of the radiation slot structure 451 and the conjoined slot structure 421. Spacing d4531. The radiation slot structure 461 has an open end 4611 located at an edge 4224 of the second conductor layer 42. The open end 4611 has a slotted hole at the intersection 42116 of the radiation slot structure 461 and the conjoined slot structure 421 Spacing d4631. The distances between the slotted holes d4331, d4431, d4531, and d4631 are between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication band 47. The length of the signal coupling lines 432, 442, 452, 462 is between 0.03 wavelength and 0.33 wavelength of the lowest operating frequency of the first communication band 47. The second conductive layer 42 may have a dielectric substrate above, and the first conductive layer 41 may also have a dielectric substrate below. The conjoined slot structure 421 can also be a linear slot structure, a multi-line slot structure, a square ring slot structure, an elliptical ring slot structure, a diamond ring slot structure, a circular slot structure, and a semicircular slot structure. Structure, elliptical slot structure, semi-elliptical slot structure, square slot structure, rectangular slot structure, rhombus slot structure, parallelogram slot structure, polygon slot structure or a combination thereof.

第4A圖中本揭露一實施例該高整合度多天線陣列4,雖然其槽孔天線數目、各部分的結構形狀與位置安排與該高整合度多天線陣列1並不完相同。然而該高整合度多天線陣列4,其同樣藉由設計該複數個輻射槽孔結構431、441、451、461均形成於該第二導體層42,並設計該複數個連體導通結構411、412、413、414、415、416、417均電氣連接該第一導體層41以及該第二導體層42,來致使該第一導體層41成功同時等效形成一多天線陣列之輻射能量反射層以及一鄰近耦合能量屏蔽層,因此該第一導體層41能夠成功導引多天線陣列輻射能量遠離鄰近耦合能量干擾。除此之外,其藉由設計各該輻射槽孔結構431、441、451、461與該訊號耦合線432、442、452、462均彼此交錯,以及設計該複數個訊號耦合線432、442、452、462均各自與該第二導體層42之間具有一耦合間距d3132、d4142、d5152、d6162,該耦合間距d3132、d4142、d5152、d6162之距離介於該第一通訊頻段47最低操作頻率之0.001波長到0.035波長之間。並且設計一連體槽孔結構421形成於該第二導體層42,該連體槽孔結構421連通該複數個輻射槽孔結構431、441、451、461。如此該連體槽孔結構421能夠有效降低該多天線陣列之等效寄生電容效應,成功補償藉該第一導體層41與該第二導體層42之間產生的耦合電容效應。因此各該槽孔天線43、44、45、46均能成功被激發產生至少一匹配良好的共振模態433、443、453、463涵蓋至少一相同的第一通訊頻段47(如第4B圖所示),並且該第一間距d1之距離僅需介於該第一通訊頻段47最低操作頻率之0.001波長到0.038波長之間。因此本發明多天線陣列4也能成功達成良好匹配以及高整合度與薄型化的功效。FIG. 4A shows an embodiment of the highly integrated multi-antenna array 4, although the number of slot antennas, the structure shape and position arrangement of each part are not exactly the same as the highly integrated multi-antenna array 1. However, the highly integrated multi-antenna array 4 is also formed by designing the plurality of radiation slot structures 431, 441, 451, and 461 to be formed on the second conductor layer 42, and designing the plurality of connected conductive structures 411, 412, 413, 414, 415, 416, and 417 are all electrically connected to the first conductor layer 41 and the second conductor layer 42, so that the first conductor layer 41 successfully forms a radiation energy reflection layer of a multi-antenna array at the same time. And an adjacent coupling energy shielding layer, so the first conductor layer 41 can successfully guide the radiation energy of the multi-antenna array away from adjacent coupling energy interference. In addition, by designing each of the radiation slot structures 431, 441, 451, 461 and the signal coupling lines 432, 442, 452, 462 to be interlaced with each other, and designing the plurality of signal coupling lines 432, 442, 452 and 462 each have a coupling distance d3132, d4142, d5152, d6162 between each and the second conductor layer 42, and the distance between the coupling distances d3132, d4142, d5152, and d6162 is between the lowest operating frequency of the first communication band 47 Between 0.001 wavelength and 0.035 wavelength. In addition, a conjoined slot structure 421 is designed to be formed on the second conductor layer 42, and the conjoined slot structure 421 communicates with the plurality of radiation slot structures 431, 441, 451, and 461. In this way, the conjoined slot structure 421 can effectively reduce the equivalent parasitic capacitance effect of the multi-antenna array, and successfully compensate for the coupling capacitance effect generated between the first conductor layer 41 and the second conductor layer 42. Therefore, each of the slot antennas 43, 44, 45, 46 can be successfully excited to produce at least one well-matched resonance mode 433, 443, 453, 463 covering at least one same first communication frequency band 47 (as shown in Figure 4B Show), and the distance of the first spacing d1 only needs to be between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 47. Therefore, the multi-antenna array 4 of the present invention can also successfully achieve good matching, high integration and thinness.

第4B圖為本揭露實施例高整合度多天線陣列4之返回損失與隔離度曲線圖。其中,該槽孔天線43之返回損失曲線為4332,該槽孔天線44之返回損失曲線為4432,該槽孔天線45之返回損失曲線為4532,該槽孔天線46之返回損失曲線為4632。該槽孔天線43與槽孔天線44之隔離度曲線為4344,該槽孔天線44與槽孔天線45之隔離度曲線為4445,該槽孔天線45與槽孔天線46之隔離度曲線為4546,該槽孔天線43與槽孔天線46之隔離度曲線為4346。其選擇下列尺寸進行實驗:該第一間距d1之距離約為1 mm;該開槽孔間距d4331、d4431、d4531、d4631之距離均約為8.15 mm;該耦合間距d3132、d4142、d5152、d6162之距離均約為0.3 mm;該訊號耦合線432、442、452、462之長度均約為15mm;該連體槽孔結構421之該圓環形槽孔結構之槽孔環長度約為79.64 mm。如第4B圖所示,該槽孔天線43激發產生一匹配良好的共振模態433,該槽孔天線44激發產生一匹配良好的共振模態443,該槽孔天線45激發產生一匹配良好的共振模態453,該槽孔天線46激發產生一匹配良好的共振模態463。該複數個共振模態433、443、453、463涵蓋至少一相同的第一通訊頻段47。在本實施例中,該第一通訊頻段47之頻段範圍為3300MHz~4200MHz,該第一通訊頻段47之最低操作頻率為3300MHz。如第4B圖所示,該複數個槽孔天線43、44、45、46間之隔離度曲線4344、4445、4546、4346,於該第一通訊頻段47中均高於10dB,驗證能達成不錯的阻抗匹配與隔離度表現。FIG. 4B is a graph of the return loss and isolation of the highly integrated multi-antenna array 4 of the disclosed embodiment. The return loss curve of the slot antenna 43 is 4332, the return loss curve of the slot antenna 44 is 4432, the return loss curve of the slot antenna 45 is 4532, and the return loss curve of the slot antenna 46 is 4632. The isolation curve between the slot antenna 43 and the slot antenna 44 is 4344, the isolation curve between the slot antenna 44 and the slot antenna 45 is 4445, and the isolation curve between the slot antenna 45 and the slot antenna 46 is 4546 , The isolation curve between the slot antenna 43 and the slot antenna 46 is 4346. The following dimensions were selected for the experiment: the distance of the first spacing d1 was about 1 mm; the distances of the slotted hole spacings d4331, d4431, d4531, and d4631 were all about 8.15 mm; the coupling spacings d3132, d4142, d5152, and d6162 The distances are all about 0.3 mm; the lengths of the signal coupling lines 432, 442, 452, 462 are all about 15 mm; the length of the slot ring of the annular slot structure of the conjoined slot structure 421 is about 79.64 mm. As shown in Figure 4B, the slot antenna 43 is excited to produce a well-matched resonance mode 433, the slot antenna 44 is excited to produce a well-matched resonance mode 443, and the slot antenna 45 is excited to produce a well-matched resonance mode 433. In the resonance mode 453, the slot antenna 46 is excited to generate a well-matched resonance mode 463. The plurality of resonance modes 433, 443, 453, and 463 cover at least one same first communication frequency band 47. In this embodiment, the frequency range of the first communication frequency band 47 is 3300 MHz-4200 MHz, and the lowest operating frequency of the first communication frequency band 47 is 3300 MHz. As shown in Figure 4B, the isolation curves 4344, 4445, 4546, and 4346 between the plurality of slot antennas 43, 44, 45, 46 are all higher than 10dB in the first communication frequency band 47, and the verification can achieve good results The impedance matching and isolation performance.

第4B圖所涵蓋之通訊系統頻段操作、實驗數據,僅是為了實驗證明第4A圖中本揭露一實施例高整合度多天線陣列4之技術功效。並未用來限制本揭露高整合度多天線陣列4於實際應用情況所能涵蓋的通訊頻段操作、應用與規格。本揭露高整合度多天線陣列4可以單一組或多組實現於通訊裝置當中,該通訊裝置可為行動通訊裝置、無線通訊裝置、行動運算裝置、電腦裝置、電信設備、基地台設備、無線橋接器設備、網路設備或電腦或網路的週邊設備等。The frequency band operation and experimental data of the communication system covered in Fig. 4B are only for experimental verification of the technical effect of the embodiment of the highly integrated multi-antenna array 4 disclosed in Fig. 4A. It is not used to limit the operation, application, and specifications of the communication frequency band that the highly integrated multi-antenna array 4 of the present disclosure can cover in actual applications. The highly integrated multi-antenna array 4 of the present disclosure can be implemented in a single group or multiple groups in a communication device. The communication device can be a mobile communication device, a wireless communication device, a mobile computing device, a computer device, a telecommunication device, a base station device, and a wireless bridge. Computer or network peripheral equipment, etc.

第5A圖為本揭露一實施例高整合度多天線陣列5之結構圖。如第5A圖所示,該高整合度多天線陣列5,包含一第一導體層51、一第二導體層52、複數個連體導通結構511、512、513、514、515、516、517、518、519、5110、5111與複數個槽孔天線53、54、55、56以及一連體槽孔結構521。該第二導體層52與該第一導體層51之間具有一第一間距d1。該第二導體層52與該第一導體層51之間具有一介質基板58。該複數個連體導通結構511、512、513、514、515、516、517、518、519、5110、5111均電氣連接該第一導體層51以及該第二導體層52。該複數個連體導通結構511、512、513、514、515、516、517、518、519、5110、5111係為導體通孔。其中,各該槽孔天線53、54、55、56均各自具有一輻射槽孔結構531、541、551、561與一訊號耦合線532、542、552、562。各該輻射槽孔結構531、541、551、561與該訊號耦合線532、542、552、562均彼此部分重疊。該複數個輻射槽孔結構531、541、551、561均形成於該第二導體層52。該複數個訊號耦合線532、542、552、562均各自與該第二導體層52之間具有一耦合間距d3132、d4142、d5152、d6162。該複數個訊號耦合線532、542、552、562均各自具有一訊號饋入端5321、5421、5521、5621。該訊號饋入端5321、5421、5521、5621均各自電氣耦接於一訊號源53211、54211、55211、56211,該訊號源53211、54211、55211、56211可為阻抗匹配電路、傳輸線、微帶傳輸線、夾心帶線、基板整合波導、共面波導、放大器電路、積體電路晶片或射頻模組。各該槽孔天線53、54、55、56均各自被激發產生至少一共振模態533、543、553、563(如第5B圖所示),該複數個共振模態533、543、553、563涵蓋至少一相同的第一通訊系統頻段57(如第5B圖所示)。該連體槽孔結構521形成於該第二導體層52,並且其連通該複數個輻射槽孔結構531、541、551、561。該連體槽孔結構521係為一方形槽孔結構。該第一間距d1之距離介於該第一通訊頻段57最低操作頻率之0.001波長到0.038波長之間。該複數個輻射槽孔結構531、541、551、561均形成於該第二導體層52。該複數個訊號耦合線532、542、552、562同樣形成於該第二導體層52。該輻射槽孔結構531與該訊號耦合線532彼此部分重疊,該訊號耦合線532與該第二導體層52之間具有一耦合間距d3132。該輻射槽孔結構541與該訊號耦合線542彼此部分重疊,該訊號耦合線542與該第二導體層52之間具有一耦合間距d4142。該輻射槽孔結構551與該訊號耦合線552彼此部分重疊,該訊號耦合線552與該第二導體層52之間具有一耦合間距d5152。該輻射槽孔結構561與該訊號耦合線562彼此部分重疊,該訊號耦合線562與該第二導體層52之間具有一耦合間距d6162。該耦合間距d3132、d4142、d5152、d6162之距離介於該第一通訊頻段57最低操作頻率之0.001波長到0.035波長之間。該輻射槽孔結構531具有一閉口端5312位於該第二導體層52之一邊緣5221,該閉口端5312至該輻射槽孔結構531與該連體槽孔結構521交接處52113具有一閉槽孔間距d5341。該輻射槽孔結構541具有一閉口端5412位於該第二導體層52之一邊緣5222,該閉口端5412至該輻射槽孔結構541與該連體槽孔結構521交接處52114具有一閉槽孔間距d5441。該輻射槽孔結構551具有一閉口端5512位於該第二導體層52之一邊緣5223,該閉口端5512至該輻射槽孔結構551與該連體槽孔結構521交接處52115具有一閉槽孔間距d5541。該輻射槽孔結構561具有一閉口端5612位於該第二導體層52之一邊緣5224,該閉口端5612至該輻射槽孔結構561與該連體槽孔結構521交接處52116具有一閉槽孔間距d5641。各該閉槽孔間距d5341、d5441、d5541、d5641之距離均介於該第一通訊頻段57最低操作頻率之0.05波長到0.59波長。該訊號耦合線532、542、552、562之長度介於該第一通訊頻段57最低操作頻率之0.03波長到0.33波長之間。該第二導體層52上方可具有一介質基板,該第一導體層51下方也可具有一介質基板。該連體槽孔結構521也可為線形槽孔結構、多線形槽孔結構、方環形槽孔結構、圓環形槽孔結構、橢圓環形槽孔結構、菱環形槽孔結構、圓形槽孔結構、半圓形槽孔結構、橢圓形槽孔結構、半橢圓形槽孔結構、矩形槽孔結構、菱形槽孔結構、平行四邊形槽孔結構、多邊形槽孔結構或其組合。FIG. 5A is a structural diagram of a highly integrated multi-antenna array 5 according to an embodiment of the disclosure. As shown in FIG. 5A, the highly integrated multi-antenna array 5 includes a first conductor layer 51, a second conductor layer 52, and a plurality of connected conductive structures 511, 512, 513, 514, 515, 516, 517 , 518, 519, 5110, 5111 and a plurality of slot antennas 53, 54, 55, 56 and a connected slot structure 521. There is a first distance d1 between the second conductive layer 52 and the first conductive layer 51. There is a dielectric substrate 58 between the second conductive layer 52 and the first conductive layer 51. The plurality of connected conductive structures 511, 512, 513, 514, 515, 516, 517, 518, 519, 5110, and 5111 are electrically connected to the first conductor layer 51 and the second conductor layer 52. The plurality of connected conductive structures 511, 512, 513, 514, 515, 516, 517, 518, 519, 5110, and 5111 are conductor vias. Each of the slot antennas 53, 54, 55, and 56 has a radiation slot structure 531, 541, 551, 561 and a signal coupling line 532, 542, 552, 562, respectively. Each of the radiation slot structures 531, 541, 551, and 561 and the signal coupling lines 532, 542, 552, and 562 partially overlap each other. The plurality of radiation slot structures 531, 541, 551, and 561 are all formed on the second conductor layer 52. Each of the plurality of signal coupling lines 532, 542, 552, and 562 has a coupling distance d3132, d4142, d5152, and d6162 between each and the second conductor layer 52. The plurality of signal coupling lines 532, 542, 552, and 562 each have a signal feeding terminal 5321, 5421, 5521, 5621. The signal feed-in terminals 5321, 5421, 5521, 5621 are each electrically coupled to a signal source 53211, 54211, 55211, 56211. The signal sources 53211, 54211, 55211, 56211 can be impedance matching circuits, transmission lines, or microstrip transmission lines. , Sandwich strip line, substrate integrated waveguide, coplanar waveguide, amplifier circuit, integrated circuit chip or radio frequency module. Each of the slot antennas 53, 54, 55, and 56 are each excited to generate at least one resonance mode 533, 543, 553, 563 (as shown in Figure 5B), and the plurality of resonance modes 533, 543, 553, 563 covers at least one same first communication system frequency band 57 (as shown in Figure 5B). The conjoined slot structure 521 is formed on the second conductor layer 52, and it communicates with the plurality of radiation slot structures 531, 541, 551, 561. The connected slot structure 521 is a square slot structure. The distance of the first spacing d1 is between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 57. The plurality of radiation slot structures 531, 541, 551, and 561 are all formed on the second conductor layer 52. The plurality of signal coupling lines 532, 542, 552, and 562 are also formed on the second conductor layer 52. The radiation slot structure 531 and the signal coupling line 532 partially overlap each other, and there is a coupling distance d3132 between the signal coupling line 532 and the second conductive layer 52. The radiation slot structure 541 and the signal coupling line 542 partially overlap each other, and there is a coupling distance d4142 between the signal coupling line 542 and the second conductive layer 52. The radiation slot structure 551 and the signal coupling line 552 partially overlap each other, and there is a coupling distance d5152 between the signal coupling line 552 and the second conductive layer 52. The radiation slot structure 561 and the signal coupling line 562 partially overlap each other, and there is a coupling distance d6162 between the signal coupling line 562 and the second conductive layer 52. The coupling distances d3132, d4142, d5152, and d6162 are between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band 57. The radiation slot structure 531 has a closed end 5312 located at an edge 5221 of the second conductor layer 52, and the closed end 5312 to the junction 52113 of the radiation slot structure 531 and the connected slot structure 521 has a closed slot. Spacing d5341. The radiation slot structure 541 has a closed end 5412 located at an edge 5222 of the second conductor layer 52, and the closed end 5412 to the junction 52114 of the radiation slot structure 541 and the connected slot structure 521 has a closed slot. Spacing d5441. The radiation slot structure 551 has a closed end 5512 located at an edge 5223 of the second conductor layer 52, and the closed end 5512 to the junction of the radiation slot structure 551 and the connected slot structure 521 has a closed slot 52115 Spacing d5541. The radiation slot structure 561 has a closed end 5612 located at an edge 5224 of the second conductor layer 52, and the closed end 5612 to the junction 52116 of the radiation slot structure 561 and the connected slot structure 521 has a closed slot. Spacing d5641. The distances between the closed slot holes d5341, d5441, d5541, and d5641 are all between 0.05 wavelength and 0.59 wavelength of the lowest operating frequency of the first communication band 57. The length of the signal coupling lines 532, 542, 552, 562 is between 0.03 wavelength and 0.33 wavelength of the lowest operating frequency of the first communication band 57. The second conductive layer 52 may have a dielectric substrate above, and the first conductive layer 51 may also have a dielectric substrate below. The conjoined slot structure 521 can also be a linear slot structure, a multi-line slot structure, a square ring slot structure, a circular ring slot structure, an elliptical ring slot structure, a diamond ring slot structure, and a circular slot structure. Structure, semi-circular slot structure, elliptical slot structure, semi-elliptical slot structure, rectangular slot structure, rhombus slot structure, parallelogram slot structure, polygon slot structure or a combination thereof.

第5A圖中本揭露一實施例該高整合度多天線陣列5,雖然其槽孔天線數目、各部分的結構形狀與位置安排與該高整合度多天線陣列1並不完相同。然而該高整合度多天線陣列5,其同樣藉由設計該複數個輻射槽孔結構531、541、551、561均形成於該第二導體層52,並設計該複數個連體導通結構511、512、513、514、515、516、517、518、519、5110、5111均電氣連接該第一導體層51以及該第二導體層52,來致使該第一導體層51成功同時等效形成一多天線陣列之輻射能量反射層以及一鄰近耦合能量屏蔽層,因此該第一導體層51能夠成功導引多天線陣列輻射能量遠離鄰近耦合能量干擾。除此之外,其藉由設計各該輻射槽孔結構531、541、551、561與該訊號耦合線532、542、552、562均彼此部分重疊,以及設計該複數個訊號耦合線532、542、552、562均各自與該第二導體層52之間具有一耦合間距d3132、d4142、d5152、d6162,該耦合間距d3132、d4142、d5152、d6162之距離介於該第一通訊頻段57最低操作頻率之0.001波長到0.035波長之間。並且設計一連體槽孔結構521形成於該第二導體層52,該連體槽孔結構521連通該複數個輻射槽孔結構531、541、551、561。如此該連體槽孔結構521能夠有效降低該多天線陣列之等效寄生電容效應,成功補償藉該第一導體層51與該第二導體層52之間產生的耦合電容效應。因此各該槽孔天線53、54、55、56均能成功被激發產生至少一匹配良好的共振模態533、543、553、563涵蓋至少一相同的第一通訊頻段57(如第5B圖所示),並且該第一間距d1之距離僅需介於該第一通訊頻段57最低操作頻率之0.001波長到0.038波長之間。因此本發明多天線陣列5也能成功達成良好匹配以及高整合度與薄型化的功效。FIG. 5A shows an embodiment of the highly integrated multi-antenna array 5, although the number of slot antennas, the structural shape and position arrangement of each part are not exactly the same as those of the highly integrated multi-antenna array 1. However, the highly integrated multi-antenna array 5 is also formed by designing the plurality of radiation slot structures 531, 541, 551, 561 to be formed on the second conductor layer 52, and designing the plurality of connected conductive structures 511, 512, 513, 514, 515, 516, 517, 518, 519, 5110, and 5111 are all electrically connected to the first conductor layer 51 and the second conductor layer 52, so that the first conductor layer 51 is successfully and equivalently formed at the same time. The radiation energy reflection layer of the multi-antenna array and an adjacent coupling energy shielding layer, so the first conductor layer 51 can successfully guide the multi-antenna array radiation energy away from adjacent coupling energy interference. In addition, by designing the radiation slot structures 531, 541, 551, 561 and the signal coupling lines 532, 542, 552, 562 to partially overlap each other, and designing the plurality of signal coupling lines 532, 542 , 552, and 562 each have a coupling distance d3132, d4142, d5152, d6162 between each and the second conductor layer 52, and the distance between the coupling distances d3132, d4142, d5152, and d6162 is between the lowest operating frequency of the first communication band 57 Between 0.001 wavelength and 0.035 wavelength. Furthermore, a conjoined slot structure 521 is designed to be formed on the second conductor layer 52, and the conjoined slot structure 521 communicates with the plurality of radiation slot structures 531, 541, 551, 561. In this way, the conjoined slot structure 521 can effectively reduce the equivalent parasitic capacitance effect of the multi-antenna array, and successfully compensate the coupling capacitance effect generated between the first conductor layer 51 and the second conductor layer 52. Therefore, each of the slot antennas 53, 54, 55, and 56 can be successfully excited to generate at least one well-matched resonance mode 533, 543, 553, and 563 covering at least one same first communication frequency band 57 (as shown in Figure 5B). Show), and the distance of the first spacing d1 only needs to be between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band 57. Therefore, the multi-antenna array 5 of the present invention can also successfully achieve good matching, high integration and thinness.

第5B圖為本揭露實施例高整合度多天線陣列5之返回損失與隔離度曲線圖。其中,該槽孔天線53之返回損失曲線為5332,該槽孔天線54之返回損失曲線為5432,該槽孔天線55之返回損失曲線為5532,該槽孔天線56之返回損失曲線為5632。該槽孔天線53與槽孔天線54之隔離度曲線為5354,該槽孔天線54與槽孔天線55之隔離度曲線為5455,該槽孔天線55與槽孔天線56之隔離度曲線為5556,該槽孔天線53與槽孔天線56之隔離度曲線為5356。其選擇下列尺寸進行實驗:該第一間距d1之距離約為1.6 mm;該閉槽孔間距d5341、d5441、d5541、d5641之距離均約為17.5 mm;該耦合間距d3132、d4142、d5152、d6162之距離均約為0.5 mm;該訊號耦合線532、542、552、562之長度均約為15mm;該連體槽孔結構521之該矩形槽孔結構之面積約為106.1mm2。如第5B圖所示,該槽孔天線53激發產生一匹配良好的共振模態533,該槽孔天線54激發產生一匹配良好的共振模態543,該槽孔天線55激發產生一匹配良好的共振模態553,該槽孔天線56激發產生一匹配良好的共振模態563。該複數個共振模態533、543、553、563涵蓋至少一相同的第一通訊頻段57。在本實施例中,該第一通訊頻段57之頻段範圍為3400MHz~3600MHz,該第一通訊頻段57之最低操作頻率為3400MHz。如第5B圖所示,該複數個槽孔天線53、54、55、56間之隔離度曲線5354、5455、5556、5356,於該第一通訊頻段57中均高於9.5dB,驗證能達成不錯的阻抗匹配與隔離度表現。FIG. 5B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 5 according to the embodiment of the disclosure. The return loss curve of the slot antenna 53 is 5332, the return loss curve of the slot antenna 54 is 5432, the return loss curve of the slot antenna 55 is 5532, and the return loss curve of the slot antenna 56 is 5632. The isolation curve between the slot antenna 53 and the slot antenna 54 is 5354, the isolation curve between the slot antenna 54 and the slot antenna 55 is 5455, and the isolation curve between the slot antenna 55 and the slot antenna 56 is 5556 , The isolation curve between the slot antenna 53 and the slot antenna 56 is 5356. The following dimensions were selected for the experiment: the distance between the first pitch d1 was about 1.6 mm; the distance between the closed slot pitches d5341, d5441, d5541, and d5641 were all about 17.5 mm; the coupling pitches d3132, d4142, d5152, and d6162 The distances are all about 0.5 mm; the lengths of the signal coupling lines 532, 542, 552, and 562 are all about 15 mm; the area of the rectangular slot structure of the conjoined slot structure 521 is about 106.1 mm 2. As shown in Fig. 5B, the slot antenna 53 is excited to generate a well-matched resonance mode 533, the slot antenna 54 is excited to generate a well-matched resonance mode 543, and the slot antenna 55 is excited to generate a well-matched resonance mode 543. In the resonance mode 553, the slot antenna 56 is excited to generate a well-matched resonance mode 563. The plurality of resonance modes 533, 543, 553, and 563 cover at least one same first communication frequency band 57. In this embodiment, the frequency range of the first communication frequency band 57 is 3400 MHz~3600 MHz, and the lowest operating frequency of the first communication frequency band 57 is 3400 MHz. As shown in Figure 5B, the isolation curves 5354, 5455, 5556, and 5356 between the plurality of slot antennas 53, 54, 55, 56 are all higher than 9.5dB in the first communication frequency band 57. Good impedance matching and isolation performance.

第5B圖所涵蓋之通訊系統頻段操作、實驗數據,僅是為了實驗證明第5A圖中本揭露一實施例高整合度多天線陣列5之技術功效。並未用來限制本揭露高整合度多天線陣列5於實際應用情況所能涵蓋的通訊頻段操作、應用與規格。本揭露高整合度多天線陣列5可以單一組或多組實現於通訊裝置當中,該通訊裝置可為行動通訊裝置、無線通訊裝置、行動運算裝置、電腦裝置、電信設備、基地台設備、無線橋接器設備、網路設備或電腦或網路的週邊設備等。The frequency band operation and experimental data of the communication system covered in Fig. 5B are only for experimental verification of the technical effects of the embodiment of the highly integrated multi-antenna array 5 disclosed in Fig. 5A. It is not used to limit the operation, application, and specifications of the communication frequency band that the highly integrated multi-antenna array 5 of the present disclosure can cover in actual applications. The highly integrated multi-antenna array 5 of the present disclosure can be implemented in a single group or multiple groups in a communication device. The communication device can be a mobile communication device, a wireless communication device, a mobile computing device, a computer device, a telecommunication device, a base station device, and a wireless bridge. Computer or network peripheral equipment, etc.

第6圖為本揭露一實施例高整合度多天線陣列6之結構圖。如第6圖所示,該高整合度多天線陣列6,包含一第一導體層61、一第二導體層62、複數個連體導通結構611、612、613、614、615、616、617、618與複數個槽孔天線63、64、65、66以及一連體槽孔結構621。該第二導體層62與該第一導體層61之間具有一第一間距d1。該第二導體層62與該第一導體層61之間具有一介質基板68。該複數個連體導通結構611、612、613、614、615、616、617、618均電氣連接該第一導體層61以及該第二導體層62。該複數個連體導通結構611、612、613、614、615、616、617、618係為導體通孔。其中,各該槽孔天線63、64、65、66均各自具有一輻射槽孔結構631、641、651、661與一訊號耦合線632、642、652、662。各該輻射槽孔結構631、641、651、661與該訊號耦合線632、642、652、662均彼此部分重疊。該複數個輻射槽孔結構631、641、651、661均形成於該第二導體層62。該複數個訊號耦合線632、642、652、662均各自與該第二導體層62之間具有一耦合間距d3132、d4142、d5152、d6162。該複數個訊號耦合線632、642、652、662均各自具有一訊號饋入端6321、6421、6521、6621。該訊號饋入端6321、6421、6521、6621均各自電氣耦接於一訊號源63211、64211、65211、66211,該訊號源63211、64211、65211、66211可為阻抗匹配電路、傳輸線、微帶傳輸線、夾心帶線、基板整合波導、共面波導、放大器電路、積體電路晶片或射頻模組。各該槽孔天線63、64、65、66均各自被激發產生至少一共振模態,該複數個共振模態涵蓋至少一相同的第一通訊系統頻段。該連體槽孔結構621形成於該第二導體層62,並且其連通該複數個輻射槽孔結構631、641、651、661。該連體槽孔結構621係為一多邊形槽孔結構。該第一間距d1之距離介於該第一通訊頻段最低操作頻率之0.001波長到0.038波長之間。該複數個輻射槽孔結構631、641、651、661均形成於該第二導體層62。該複數個訊號耦合線632、642、652、662同樣形成於該第二導體層62。該輻射槽孔結構631與該訊號耦合線632彼此部分重疊,該訊號耦合線632與該第二導體層62之間具有一耦合間距d3132。該輻射槽孔結構641與該訊號耦合線642彼此部分重疊,該訊號耦合線642與該第二導體層62之間具有一耦合間距d4142。該輻射槽孔結構651與該訊號耦合線652彼此部分重疊,該訊號耦合線652與該第二導體層62之間具有一耦合間距d5152。該輻射槽孔結構661與該訊號耦合線662彼此部分重疊,該訊號耦合線662與該第二導體層62之間具有一耦合間距d6162。該耦合間距d3132、d4142、d5152、d6162之距離介於該第一通訊頻段最低操作頻率之0.001波長到0.035波長之間。該輻射槽孔結構631具有一閉口端6312位於該第二導體層62之一邊緣6221,該閉口端6312至該輻射槽孔結構631與該連體槽孔結構621交接處62113具有一閉槽孔間距d6341。該輻射槽孔結構641具有一開口端6411位於該第二導體層62之一邊緣6222,該開口端6411至該輻射槽孔結構641與該連體槽孔結構621交接處62114具有一開槽孔間距d6431。該輻射槽孔結構651具有一閉口端6512位於該第二導體層62之一邊緣6223,該閉口端6512至該輻射槽孔結構651與該連體槽孔結構621交接處62115具有一閉槽孔間距d6541。該輻射槽孔結構661具有一開口端6611位於該第二導體層62之一邊緣6224,該開口端6611至該輻射槽孔結構661與該連體槽孔結構621交接處62116具有一開槽孔間距d6631。各該開槽孔間距d6431、d6631之距離均介於該第一通訊頻段最低操作頻率之0.01波長到0.29波長。各該閉槽孔間距d6341、d6541之距離均介於該第一通訊頻段最低操作頻率之0.05波長到0.59波長。該訊號耦合線632、642、652、662之長度介於該第一通訊頻段最低操作頻率之0.03波長到0.33波長之間。該第二導體層62上方可具有一介質基板,該第一導體層61下方也可具有一介質基板。該連體槽孔結構621也可為線形槽孔結構、多線形槽孔結構、方環形槽孔結構、圓環形槽孔結構、橢圓環形槽孔結構、菱環形槽孔結構、圓形槽孔結構、半圓形槽孔結構、橢圓形槽孔結構、半橢圓形槽孔結構、方形槽孔結構、矩形槽孔結構、菱形槽孔結構、平行四邊形槽孔結構或其組合。FIG. 6 is a structural diagram of a highly integrated multi-antenna array 6 according to an embodiment of the disclosure. As shown in Figure 6, the highly integrated multi-antenna array 6 includes a first conductor layer 61, a second conductor layer 62, and a plurality of connected conductive structures 611, 612, 613, 614, 615, 616, 617 , 618 and a plurality of slot antennas 63, 64, 65, 66 and a connected slot structure 621. There is a first distance d1 between the second conductive layer 62 and the first conductive layer 61. A dielectric substrate 68 is provided between the second conductive layer 62 and the first conductive layer 61. The plurality of connected conductive structures 611, 612, 613, 614, 615, 616, 617, and 618 are all electrically connected to the first conductive layer 61 and the second conductive layer 62. The plurality of connected conductive structures 611, 612, 613, 614, 615, 616, 617, and 618 are conductor vias. Each of the slot antennas 63, 64, 65, and 66 has a radiation slot structure 631, 641, 651, 661 and a signal coupling line 632, 642, 652, 662. Each of the radiation slot structures 631, 641, 651, and 661 and the signal coupling lines 632, 642, 652, and 662 partially overlap each other. The plurality of radiation slot structures 631, 641, 651, and 661 are all formed on the second conductive layer 62. Each of the plurality of signal coupling lines 632, 642, 652, and 662 has a coupling distance d3132, d4142, d5152, and d6162 between each and the second conductor layer 62. The plurality of signal coupling lines 632, 642, 652, and 662 each have a signal feed-in terminal 6321, 6421, 6521, and 6621. The signal feed-in terminals 6321, 6421, 6521, and 6621 are each electrically coupled to a signal source 63211, 64211, 65211, 66211, the signal source 63211, 64211, 65211, 66211 can be impedance matching circuit, transmission line, microstrip transmission line , Sandwich strip line, substrate integrated waveguide, coplanar waveguide, amplifier circuit, integrated circuit chip or radio frequency module. Each of the slot antennas 63, 64, 65, 66 is excited to generate at least one resonance mode, and the plurality of resonance modes cover at least one same frequency band of the first communication system. The conjoined slot structure 621 is formed on the second conductor layer 62, and it communicates with the plurality of radiation slot structures 631, 641, 651, and 661. The connected slot structure 621 is a polygonal slot structure. The distance of the first spacing d1 is between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication band. The plurality of radiation slot structures 631, 641, 651, and 661 are all formed on the second conductive layer 62. The plurality of signal coupling lines 632, 642, 652, and 662 are also formed on the second conductor layer 62. The radiation slot structure 631 and the signal coupling line 632 partially overlap each other, and there is a coupling distance d3132 between the signal coupling line 632 and the second conductive layer 62. The radiation slot structure 641 and the signal coupling line 642 partially overlap each other, and there is a coupling distance d4142 between the signal coupling line 642 and the second conductor layer 62. The radiation slot structure 651 and the signal coupling line 652 partially overlap each other, and there is a coupling distance d5152 between the signal coupling line 652 and the second conductive layer 62. The radiation slot structure 661 and the signal coupling line 662 partially overlap each other, and there is a coupling distance d6162 between the signal coupling line 662 and the second conductive layer 62. The coupling distances d3132, d4142, d5152, and d6162 are between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication band. The radiation slot structure 631 has a closed end 6312 located at an edge 6221 of the second conductor layer 62, and the closed end 6312 to the junction of the radiation slot structure 631 and the connected slot structure 621 has a closed slot 62113 Spacing d6341. The radiation slot structure 641 has an open end 6411 located at an edge 6222 of the second conductor layer 62, and the open end 6411 to the junction of the radiation slot structure 641 and the conjoined slot structure 621 has a slotted hole 62114 Spacing d6431. The radiation slot structure 651 has a closed end 6512 located at an edge 6223 of the second conductor layer 62, and the closed end 6512 to the junction of the radiation slot structure 651 and the connected slot structure 621 has a closed slot 62115 Spacing d6541. The radiation slot structure 661 has an open end 6611 located at an edge 6224 of the second conductor layer 62, and the open end 6611 to the junction of the radiation slot structure 661 and the conjoined slot structure 621 has a slotted hole 62116 Spacing d6631. The distances between the slotted holes d6431 and d6631 are between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication frequency band. The distance between each of the closed slot holes d6341 and d6541 is between 0.05 wavelength and 0.59 wavelength of the lowest operating frequency of the first communication band. The length of the signal coupling lines 632, 642, 652, 662 is between 0.03 wavelength and 0.33 wavelength of the lowest operating frequency of the first communication band. A dielectric substrate may be provided above the second conductive layer 62, and a dielectric substrate may also be provided below the first conductive layer 61. The conjoined slot structure 621 can also be a linear slot structure, a multi-line slot structure, a square ring slot structure, a circular ring slot structure, an elliptical ring slot structure, a diamond ring slot structure, and a circular slot structure. Structure, semi-circular slot structure, elliptical slot structure, semi-elliptical slot structure, square slot structure, rectangular slot structure, rhombus slot structure, parallelogram slot structure or a combination thereof.

第6圖中本揭露一實施例該高整合度多天線陣列6,雖然其槽孔天線數目、各部分的結構形狀與位置安排與該高整合度多天線陣列1並不完相同。然而該高整合度多天線陣列6,其同樣藉由設計該複數個輻射槽孔結構631、641、651、661均形成於該第二導體層62,並設計該複數個連體導通結構611、612、613、614、615、616、617、618均電氣連接該第一導體層61以及該第二導體層62,來致使該第一導體層61成功同時等效形成一多天線陣列之輻射能量反射層以及一鄰近耦合能量屏蔽層,因此該第一導體層61能夠成功導引多天線陣列輻射能量遠離鄰近耦合能量干擾。除此之外,其藉由設計各該輻射槽孔結構631、641、651、661與該訊號耦合線632、642、652、662均彼此部分重疊,以及設計該複數個訊號耦合線632、642、652、662均各自與該第二導體層62之間具有一耦合間距d3132、d4142、d5152、d6162,該耦合間距d3132、d4142、d5152、d6162之距離介於該第一通訊頻段最低操作頻率之0.001波長到0.035波長之間。並且設計一連體槽孔結構621形成於該第二導體層62,該連體槽孔結構621連通該複數個輻射槽孔結構631、641、651、661。如此該連體槽孔結構621能夠有效降低該多天線陣列之等效寄生電容效應,成功補償藉該第一導體層61與該第二導體層62之間產生的耦合電容效應。因此各該槽孔天線63、64、65、66均能成功被激發產生至少一匹配良好的共振模態涵蓋至少一相同的第一通訊頻段,並且該第一間距d1之距離僅需介於該第一通訊頻段最低操作頻率之0.001波長到0.038波長之間。因此本發明多天線陣列6也能成功達成良好匹配以及高整合度與薄型化的功效。FIG. 6 shows an embodiment of the highly integrated multi-antenna array 6, although the number of slot antennas, the structural shape and position arrangement of each part are not completely the same as the highly integrated multi-antenna array 1. However, the highly integrated multi-antenna array 6 is also formed by designing the plurality of radiation slot structures 631, 641, 651, and 661 to be formed on the second conductor layer 62, and designing the plurality of connected conductive structures 611, 612, 613, 614, 615, 616, 617, and 618 are all electrically connected to the first conductor layer 61 and the second conductor layer 62, so that the first conductor layer 61 successfully forms the radiation energy of a multi-antenna array simultaneously The reflective layer and an adjacent coupling energy shielding layer, so the first conductor layer 61 can successfully guide the radiation energy of the multi-antenna array away from adjacent coupling energy interference. In addition, by designing the radiation slot structures 631, 641, 651, 661 and the signal coupling lines 632, 642, 652, 662 to partially overlap each other, and designing the plurality of signal coupling lines 632, 642 , 652, and 662 each have a coupling distance d3132, d4142, d5152, d6162 between each and the second conductor layer 62, and the distance between the coupling distances d3132, d4142, d5152, and d6162 is between the lowest operating frequency of the first communication band Between 0.001 wavelength and 0.035 wavelength. In addition, a conjoined slot structure 621 is designed to be formed on the second conductor layer 62, and the conjoined slot structure 621 is connected to the plurality of radiation slot structures 631, 641, 651, and 661. In this way, the conjoined slot structure 621 can effectively reduce the equivalent parasitic capacitance effect of the multi-antenna array, and successfully compensate for the coupling capacitance effect generated between the first conductor layer 61 and the second conductor layer 62. Therefore, each of the slot antennas 63, 64, 65, and 66 can be successfully excited to generate at least one well-matched resonance mode covering at least one same first communication frequency band, and the distance between the first spacing d1 only needs to be between the The lowest operating frequency of the first communication band is between 0.001 wavelength and 0.038 wavelength. Therefore, the multi-antenna array 6 of the present invention can also successfully achieve good matching, high integration and thinness.

本揭露高整合度多天線陣列6可以單一組或多組實現於通訊裝置當中,該通訊裝置可為行動通訊裝置、無線通訊裝置、行動運算裝置、電腦裝置、電信設備、基地台設備、無線橋接器設備、網路設備或電腦或網路的週邊設備等。The highly integrated multi-antenna array 6 of the present disclosure can be implemented in a single group or multiple groups in a communication device. The communication device can be a mobile communication device, a wireless communication device, a mobile computing device, a computer device, a telecommunication device, a base station device, and a wireless bridge. Computer or network peripheral equipment, etc.

綜上所述,雖然本案已以實施例揭露如上,然其並非用以限定本案。本案所屬技術領域中具有通常知識者,在不脫離本案之精神和範圍內,當可作各種之更動與潤飾。因此,本案之保護範圍當視後附之申請專利範圍所界定者為準。To sum up, although this case has been disclosed as above in an embodiment, it is not intended to limit the case. Those with ordinary knowledge in the technical field of the case can make various changes and modifications without departing from the spirit and scope of the case. Therefore, the scope of protection in this case shall be subject to the scope of the attached patent application.

1、2、3、4、5、6:高整合度多天線陣列 11、21、31、41、51、61:第一導體層 111、112、113、114、115、116、117、118、211、212、213、214、215、216、217、218、219、311、312、313、314、315、316、317、318、319、3110、411、412、413、414、415、416、417、511、512、513、514、515、516、517、518、519、5110、5111、611、612、613、614、615、616、617、618:連體導通結構 12、22、32、42、52、62:第二導體層 121、221、321、421、521、621:連體槽孔結構 1221、1222、2221、2222、3221、3222、4221、4222、4223、4224、5221、5222、5223、5224、6221、6222、6223、6224:第二導體層之邊緣 13、14、23、24、33、34、43、44、45、46、53、54、55、56、63、64、65、66:槽孔天線 131、141、231、241、331、341、431、441、451、461、531、541、551、561、631、641、651、661:輻射槽孔結構 132、142、232、242、332、342、432、442、452、462、532、542、552、562、632、642、652、662:訊號耦合線 1321、1421、2321、2421、3321、3421、4321、4421、4521、4621、5321、5421、5521、5621、6321、6421、6521、6621:訊號饋入端 13211、14211、23211、24211、33211、34211、43211、44211、45211、46211、53211、54211、55211、56211、63211、64211、65211、66211:訊號源 133、143、233、243、333、343、433、443、453、463、533、543、553、563:共振模態 1311、2311、2411、3311、3411、4311、4411、4511、4611、6411、6611:開口端 1412、5312、5412、5512、5612、6312、6512:閉口端 12113、12114、22113、22114、32113、32114、42113、42114、42115、42116、52113、52114、52115、52116、62113、62114、62115、62116:輻射槽孔結構與連體槽孔結構之交接處 d1:第一間距 d3132、d4142、d5152、d6162:耦合間距 d1331、d2331、d2431、d3331、d3431、d4331、d4431、d4531、d4631、d6431、d6631:開槽孔間距 d1441、d5341、d5441、d5541、d5641、d6341、d6541:閉槽孔間距 1332、1432、2332、2432、3332、3432、4332、4432、4532、4632、5332、5432、5532、5632:槽孔天線之返回損失曲線 1314、2324、3334、4344、4445、4546、4346、5354、5455、5556、5356:槽孔天線之隔離度曲線 17、27、37、47、57:第一通訊頻段 58、68:介質基板 29、39、49:多層介質基板1, 2, 3, 4, 5, 6: Highly integrated multi-antenna array 11, 21, 31, 41, 51, 61: first conductor layer 111, 112, 113, 114, 115, 116, 117, 118, 211, 212, 213, 214, 215, 216, 217, 218, 219, 311, 312, 313, 314, 315, 316, 317, 318, 319, 3110, 411, 412, 413, 414, 415, 416, 417, 511, 512, 513, 514, 515, 516, 517, 518, 519, 5110, 5111, 611, 612, 613, 614, 615, 616, 617, 618: Siamese conduction structure 12, 22, 32, 42, 52, 62: second conductor layer 121, 221, 321, 421, 521, 621: Siamese slot structure 1221, 1222, 2221, 2222, 3221, 3222, 4221, 4222, 4223, 4224, 5221, 5222, 5223, 5224, 6221, 6222, 6223, 6224: the edge of the second conductor layer 13, 14, 23, 24, 33, 34, 43, 44, 45, 46, 53, 54, 55, 56, 63, 64, 65, 66: slot antenna 131, 141, 231, 241, 331, 341, 431, 441, 451, 461, 531, 541, 551, 561, 631, 641, 651, 661: radiation slot structure 132, 142, 232, 242, 332, 342, 432, 442, 452, 462, 532, 542, 552, 562, 632, 642, 652, 662: signal coupling line 1321, 1421, 2321, 2421, 3321, 3421, 4321, 4421, 4521, 4621, 5321, 5421, 5521, 5621, 6321, 6421, 6521, 6621: signal feed end 13211, 14211, 23211, 24211, 33211, 34211, 43211, 44211, 45211, 46211, 53211, 54211, 55211, 56211, 63211, 64211, 65211, 66211: signal source 133, 143, 233, 243, 333, 343, 433, 443, 453, 463, 533, 543, 553, 563: resonance mode 1311, 2311, 2411, 3311, 3411, 4311, 4411, 4511, 4611, 6411, 6611: open end 1412, 5312, 5412, 5512, 5612, 6312, 6512: closed end 12113, 12114, 22113, 22114, 32113, 32114, 42113, 42114, 42115, 42116, 52113, 52114, 52115, 52116, 62113, 62114, 62115, 62116: the junction of the radiation slot structure and the conjoined slot structure d1: first spacing d3132, d4142, d5152, d6162: coupling pitch d1331, d2331, d2431, d3331, d3431, d4331, d4431, d4531, d4631, d6431, d6631: slot pitch d1441, d5341, d5441, d5541, d5641, d6341, d6541: closed slot pitch 1332, 1432, 2332, 2432, 3332, 3432, 4332, 4432, 4532, 4632, 5332, 5432, 5532, 5632: Return loss curve of slot antenna 1314, 2324, 3334, 4344, 4445, 4546, 4346, 5354, 5455, 5556, 5356: isolation curve of slot antenna 17, 27, 37, 47, 57: the first communication frequency band 58, 68: Dielectric substrate 29, 39, 49: multilayer dielectric substrate

第1A圖為本揭露一實施例高整合度多天線陣列1之結構圖。 第1B圖為本揭露一實施例高整合度多天線陣列1之返回損失與隔離度曲線圖。 第2A圖為本揭露一實施例高整合度多天線陣列2之結構圖。 第2B圖為本揭露一實施例高整合度多天線陣列2之返回損失與隔離度曲線圖。 第3A圖為本揭露一實施例高整合度多天線陣列3之結構圖。 第3B圖為本揭露一實施例高整合度多天線陣列3之返回損失與隔離度曲線圖。 第4A圖為本揭露一實施例高整合度多天線陣列4之結構圖。 第4B圖為本揭露一實施例高整合度多天線陣列4之返回損失與隔離度曲線圖。 第5A圖為本揭露一實施例高整合度多天線陣列5之結構圖。 第5B圖為本揭露一實施例高整合度多天線陣列5之返回損失與隔離度曲線圖。 第6圖為本揭露一實施例高整合度多天線陣列6之結構圖。 FIG. 1A is a structural diagram of a highly integrated multi-antenna array 1 according to an embodiment of the disclosure. FIG. 1B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 1 according to an embodiment of the disclosure. FIG. 2A is a structural diagram of a highly integrated multi-antenna array 2 according to an embodiment of the disclosure. FIG. 2B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 2 according to an embodiment of the disclosure. FIG. 3A is a structural diagram of a highly integrated multi-antenna array 3 according to an embodiment of the disclosure. FIG. 3B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 3 according to an embodiment of the disclosure. FIG. 4A is a structural diagram of a highly integrated multi-antenna array 4 according to an embodiment of the disclosure. FIG. 4B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 4 according to an embodiment of the disclosure. FIG. 5A is a structural diagram of a highly integrated multi-antenna array 5 according to an embodiment of the disclosure. FIG. 5B is a graph showing the return loss and isolation of the highly integrated multi-antenna array 5 according to an embodiment of the disclosure. FIG. 6 is a structural diagram of a highly integrated multi-antenna array 6 according to an embodiment of the disclosure.

1:高整合度多天線陣列 1: Highly integrated multi-antenna array

11:第一導體層 11: The first conductor layer

111、112、113、114、115、116、117、118:連體導通結構 111, 112, 113, 114, 115, 116, 117, 118: conjoined conduction structure

12:第二導體層 12: second conductor layer

121:連體槽孔結構 121: Siamese slot structure

1221、1222:第二導體層之邊緣 1221, 1222: the edge of the second conductor layer

13、14:槽孔天線 13, 14: Slot antenna

131、141:輻射槽孔結構 131, 141: Radiation slot structure

132、142:訊號耦合線 132, 142: signal coupling line

1321、1421:訊號饋入端 1321, 1421: signal feed end

13211、14211:訊號源 13211, 14211: signal source

1311:開口端 1311: open end

1412:閉口端 1412: closed end

12113、12114:輻射槽孔結構與連體槽孔結構之交接處 12113, 12114: The junction of the radiation slot structure and the conjoined slot structure

d1:第一間距 d1: first spacing

d3132、d4142:耦合間距 d3132, d4142: coupling pitch

d1331:開槽孔間距 d1331: Slotted hole spacing

d1441:閉槽孔間距 d1441: spacing between closed slots

Claims (14)

一種高整合度多天線陣列,包含: 一第一導體層; 一第二導體層,其與該第一導體層之間具有一第一間距; 複數個連體導通結構,其均電氣連接該第一導體層以及該第二導體層; 複數個槽孔天線,其中,各該槽孔天線均各自具有一輻射槽孔結構與一訊號耦合線,各該輻射槽孔結構與該訊號耦合線均彼此部分重疊或交錯,該複數個輻射槽孔結構均形成於該第二導體層,該複數個訊號耦合線均各自與該第二導體層之間具有一耦合間距,並且該複數個訊號耦合線均各自具有一訊號饋入端,各該槽孔天線均各自被激發產生至少一共振模態,該複數個共振模態涵蓋至少一相同的第一通訊頻段;以及 一連體槽孔結構,其形成於該第二導體層,並且該連體槽孔結構連通該複數個輻射槽孔結構。 A highly integrated multi-antenna array, including: A first conductor layer; A second conductor layer with a first distance between it and the first conductor layer; A plurality of connected conductive structures, all of which are electrically connected to the first conductor layer and the second conductor layer; A plurality of slot antennas, wherein each of the slot antennas has a radiation slot structure and a signal coupling line, each of the radiation slot structure and the signal coupling line partially overlap or intersect each other, and the plurality of radiation slots The hole structures are all formed in the second conductor layer, each of the plurality of signal coupling lines has a coupling interval with the second conductor layer, and each of the plurality of signal coupling lines has a signal feeding end, and each The slot antennas are each excited to generate at least one resonance mode, and the plurality of resonance modes cover at least one same first communication frequency band; and A conjoined slot structure is formed on the second conductor layer, and the conjoined slot structure communicates with the plurality of radiation slot structures. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該第一間距之距離介於該第一通訊頻段最低操作頻率之0.001波長到0.038波長之間。The highly integrated multi-antenna array described in claim 1 of the scope of patent application, wherein the distance of the first spacing is between 0.001 wavelength and 0.038 wavelength of the lowest operating frequency of the first communication frequency band. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該訊號耦合線係形成於該第一導體層、該第二導體層或位於該第一導體層與該第二導體層之間。The highly integrated multi-antenna array described in claim 1, wherein the signal coupling line is formed on the first conductor layer, the second conductor layer, or on the first conductor layer and the second conductor layer between. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該耦合間距之距離介於該第一通訊頻段最低操作頻率之0.001波長到0.035波長之間。The highly integrated multi-antenna array described in the first item of the scope of patent application, wherein the coupling distance is between 0.001 wavelength and 0.035 wavelength of the lowest operating frequency of the first communication frequency band. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該第二導體層與該第一導體層之間具有一介質基板。The highly integrated multi-antenna array described in the first item of the scope of patent application, wherein a dielectric substrate is provided between the second conductor layer and the first conductor layer. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該第二導體層與該第一導體層之間具有一多層介質基板。The highly integrated multi-antenna array described in the first item of the scope of patent application, wherein a multilayer dielectric substrate is provided between the second conductor layer and the first conductor layer. 如申請專利範圍第6項所述之高整合度多天線陣列,其中,該訊號耦合線整合於該多層介質基板。In the highly integrated multi-antenna array described in item 6 of the scope of patent application, the signal coupling line is integrated on the multilayer dielectric substrate. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該輻射槽孔結構具有一開口端位於該第二導體層之一邊緣,該開口端至該輻射槽孔結構與該連體槽孔結構之交接處具有一開槽孔間距,該開槽孔間距之距離介於該第一通訊頻段最低操作頻率之0.01波長到0.29波長之間。The highly integrated multi-antenna array described in claim 1, wherein the radiation slot structure has an open end located at an edge of the second conductor layer, and the open end is connected to the radiation slot structure and the connection The junction of the body slot structure has a slot hole pitch, and the slot hole pitch is between 0.01 wavelength and 0.29 wavelength of the lowest operating frequency of the first communication frequency band. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該輻射槽孔結構具有一閉口端位於該第二導體層之一邊緣,該閉口端至該輻射槽孔結構與該連體槽孔結構之交接處具有一閉槽孔間距,該閉槽孔間距之距離介於該第一通訊頻段最低操作頻率之0.05波長到0.59波長之間。The highly integrated multi-antenna array described in claim 1, wherein the radiation slot structure has a closed end located at an edge of the second conductor layer, and the closed end is connected to the radiation slot structure and the connection The junction of the body slot structure has a closed slot pitch, and the distance of the closed slot pitch is between 0.05 wavelength and 0.59 wavelength of the lowest operating frequency of the first communication frequency band. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該訊號耦合線之長度介於該第一通訊頻段最低操作頻率之0.03波長到0.33波長之間。For the highly integrated multi-antenna array described in claim 1, wherein the length of the signal coupling line is between 0.03 wavelength and 0.33 wavelength of the lowest operating frequency of the first communication frequency band. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該連體槽孔結構係為線形槽孔結構、多線形槽孔結構、方環形槽孔結構、圓環形槽孔結構、橢圓環形槽孔結構、菱環形槽孔結構、圓形槽孔結構、半圓形槽孔結構、橢圓形槽孔結構、半橢圓形槽孔結構、方形槽孔結構、矩形槽孔結構、菱形槽孔結構、平行四邊形槽孔結構、多邊形槽孔結構或其組合。The highly integrated multi-antenna array described in item 1 of the scope of patent application, wherein the conjoined slot structure is a linear slot structure, a multi-line slot structure, a square ring slot structure, and a circular ring slot structure , Oval ring slot structure, diamond ring slot structure, circular slot structure, semicircular slot structure, oval slot structure, semi-elliptical slot structure, square slot structure, rectangular slot structure, rhombus Slot structure, parallelogram slot structure, polygonal slot structure or a combination thereof. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該連體導通結構係為導體線或導體通孔。For the highly integrated multi-antenna array described in item 1 of the scope of patent application, the connected conductive structure is a conductor wire or a conductor through hole. 如申請專利範圍第1項所述之高整合度多天線陣列,其中,該訊號饋入端均各自電氣耦接於一訊號源。For the highly integrated multi-antenna array described in the scope of the patent application, each of the signal feed-in ends is electrically coupled to a signal source. 如申請專利範圍第13項所述之高整合度多天線陣列,其中,該訊號源係為阻抗匹配電路、傳輸線、微帶傳輸線、夾心帶線、基板整合波導、共面波導、放大器電路、積體電路晶片或射頻模組。The highly integrated multi-antenna array described in item 13 of the scope of patent application, wherein the signal source is impedance matching circuit, transmission line, microstrip transmission line, sandwich strip line, substrate integrated waveguide, coplanar waveguide, amplifier circuit, and product Bulk circuit chip or RF module.
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