TWI706573B - Semiconductor device, manufacturing method of the same and biometric identification apparatus using the same - Google Patents

Abstract

A semiconductor device includes a conductive substrate and an encapsulation structure. The conductive substrate has a plurality of pixels. The encapsulation structure is disposed on the conductive substrate and includes at least one light- collimating unit. The light- collimating unit includes a transparent substrate and a patterned light-shielding layer. The patterned light-shielding layer is disposed on the transparent substrate. The patterned light-shielding layer has a plurality of holes disposed correspondingly to the pixels.

Description

Semiconductor device, its manufacturing method and biometric identification equipment using it

The disclosed embodiment relates to a semiconductor device, and more particularly to a semiconductor device with a light-collimating function, its manufacturing method, and a biometric device using it.

Semiconductor devices can be used in various applications. For example, the semiconductor device may be used as a biometric identification device (for example, at least a part of a fingerprint identification device, a face recognition device, an iris recognition device, etc.). The biometric device can be composed of a large number of optical components. For example, the above-mentioned optical element may include a collimator (collimator). The light collimator can be used to collimate light to reduce the energy loss caused by light divergence. Therefore, the optical collimator can be used in, for example, a biometric identification device (for example, a fingerprint identification device) to increase its identification performance.

However, the existing light collimator and its forming method are not satisfactory in all aspects.

The disclosed embodiments include a semiconductor device. The semiconductor device includes a conductive substrate and a packaging structure. The conductive substrate has a plurality of pixels. The packaging structure is disposed on the conductive substrate, and the packaging structure includes at least one light collimating unit. The light collimating unit includes a transparent substrate and a patterned light shielding layer. The patterned light shielding layer is arranged on the transparent substrate. The patterned light shielding layer has a plurality of holes arranged corresponding to the pixels.

The disclosed embodiments include a method of manufacturing a semiconductor device. The manufacturing method includes forming a light-shielding material on a transparent substrate. The manufacturing method further includes patterning the light-shielding material to form a patterned light-shielding layer with a plurality of holes. The transparent substrate and the patterned light-shielding layer define a light collimating unit. The manufacturing method includes forming a light collimating unit on a conductive substrate. The conductive substrate has a plurality of pixels, and the holes are arranged corresponding to the pixels.

The disclosed embodiment includes a biometric identification device. The biometric identification equipment includes the semiconductor device as described above. The biometric identification device further includes a light source layer and a cover plate. The light source layer is arranged on the semiconductor device, and the cover plate is arranged on the light source layer.

The following disclosure provides many different embodiments or examples to implement different features of this case. The following disclosure describes specific examples of each component and its arrangement to simplify the description. Of course, these specific examples are not meant to be limiting. For example, if the embodiment of the present disclosure describes that a first characteristic component is formed on or above a second characteristic component, it means that it may include an embodiment in which the first characteristic component and the second characteristic component are in direct contact. It may include an embodiment in which an additional characteristic part is formed between the first characteristic part and the second characteristic part, and the first characteristic part and the second characteristic part may not be in direct contact.

It should be understood that additional operation steps may be implemented before, during or after the method, and in other embodiments of the method, part of the operation steps may be replaced or omitted.

In addition, terms related to space may be used, such as "below", "below", "lower", "above", "above", "higher" and similar terms. These space-related terms are used to facilitate the description of the relationship between one element(s) or characteristic part and another (some) elements or characteristic parts in the illustration. These space-related terms include the difference between devices in use or operation. Position, and the position described in the diagram. When the device is turned in different directions (rotated by 90 degrees or other directions), the space-related adjectives used therein will also be interpreted according to the turned position.

In the manual, the terms "about", "approximately" and "approximately" usually mean within 20%, or within 10%, or within 5%, or within 3% of a given value or range. Or within 2%, or within 1%, or within 0.5%. The quantity given here is an approximate quantity, that is, the meaning of "about", "approximately" and "approximately" can still be implied without specifying "about", "approximately" or "approximately".

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings commonly understood by the general artisans to whom the disclosure belongs. It is understandable that these terms, such as those defined in commonly used dictionaries, should be interpreted as having meaning consistent with the relevant technology and the background or context of this disclosure, and should not be used in an idealized or overly formal way. Interpretation, unless there is a special definition in the embodiment of the present disclosure.

The different embodiments disclosed below may use the same reference symbols and/or marks repeatedly. These repetitions are for the purpose of simplification and clarity, and are not used to limit the specific relationship between the different embodiments and/or structures discussed.

FIG. 1 to FIG. 5 are a series of cross-sectional views, which illustrate a method of forming a semiconductor device 100 according to an embodiment of the present invention. It should be noted that, for the sake of brevity, some components may be omitted in Figures 1 to 5.

As shown in Figure 1, a transparent substrate 10 is provided. In some embodiments, the material of the transparent substrate 10 may include glass, quartz, polyimide (PI), liquid-crystal polymer (LCP), polycarbonate (PC), polypropylene (polypropylene, PP), polyethylene terephthalate (PET), other suitable materials, or combinations of the foregoing materials, but the embodiments of the disclosure are not limited thereto.

Next, the light shielding material 12 is formed on the transparent substrate 10. In some embodiments, the light-shielding material 12 may include metal, such as copper (Cu), silver (Ag), etc., but the embodiment of the disclosure is not limited thereto. In some embodiments, the light-shielding material 12 may include photoresist (for example, black photoresist or other suitable non-transparent photoresist), ink (for example, black ink or other suitable non-transparent ink), molding compound (molding compound) (for example, black molding compound or other suitable non-transparent molding compound), solder mask (for example, black solder mask or other suitable non-transparent solder mask), epoxy resin , Other suitable materials or combinations of the foregoing materials, but the embodiments of the present disclosure are not limited thereto.

In some embodiments, the light-shielding material 12 may be a photo-curable material, a heat-curable material, or a combination of the foregoing materials. For example, a spin-on coating process can be used to coat the light-shielding material 12 on the transparent substrate 10, but the embodiment of the disclosure is not limited to this.

Next, as shown in FIG. 2, a patterning process may be performed to pattern the light-shielding material 12 to form a patterned light-shielding layer 14 having a plurality of holes O1. In detail, the aforementioned patterning process can remove part of the shading material 12 to form a plurality of holes O1. In some embodiments, the aforementioned patterning process may include soft baking, mask aligning, exposure, post-exposure baking, developing, Rinsing, drying, other appropriate steps or a combination of the foregoing steps, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the transparent substrate 10 and the patterned light-shielding layer 14 may define a light collimating unit 16 (hereinafter referred to as the first light collimating unit 16).

In some embodiments, after the light-shielding material 12 is patterned, the transparent substrate 10 can be lapping to make the transparent substrate 10 have a predetermined thickness (for example, 80 μm), but the disclosed embodiment is not This is limited.

As shown in Figure 3, in some embodiments, the foregoing steps may be repeated to form a plurality of light collimating units. For example, another transparent substrate 18 may be provided and the shading material 12 may be formed on the transparent substrate 18 (for example, using a spin coating process), and then a patterning process may be performed to pattern the shading material 12 to form a plurality of A patterned light-shielding layer 20 with a hole O2. The transparent substrate 18 and the patterned light-shielding layer 20 can define a light collimating unit 22 (hereinafter referred to as the second light collimating unit 22). Similarly, after the light shielding material 12 is patterned, the transparent substrate 18 can be polished so that the transparent substrate 18 has a predetermined thickness. In some embodiments, the thickness of the transparent substrate 18 and the thickness of the transparent substrate 10 may be the same or different from each other. In some embodiments, the thickness of the patterned light shielding layer 20 and the thickness of the patterned light shielding layer 14 may also be the same as or different from each other.

In some embodiments, a third light collimating unit 28 may be further formed. The third light collimating unit 28 includes a transparent substrate 24 and a patterned light shielding layer 26. The patterned light shielding layer 26 is disposed on the transparent substrate 24, and the patterned light shielding layer 26 has a plurality of holes O3, but the embodiment of the disclosure is not limited thereto. In some embodiments, the thickness of the transparent substrate 24 may be the same as or different from the thickness of the transparent substrate 18 and the thickness of the transparent substrate 10. In some embodiments, the thickness of the patterned light shielding layer 26 may be the same as or different from the thickness of the patterned light shielding layer 20 and the thickness of the patterned light shielding layer 14.

Since the thickness of the transparent substrate 10, the thickness of the transparent substrate 18, and the thickness of the transparent substrate 24 may be different from each other, the thickness of the patterned light shielding layer 14, the thickness of the patterned light shielding layer 20, and the thickness of the patterned light shielding layer 26 may be different from each other, Therefore, the thickness T1 of the first light collimating unit 16, the thickness T2 of the second light collimating unit 22 and the thickness T3 of the third light collimating unit 28 may be different from each other, but the embodiment of the disclosure is not limited thereto. In some embodiments, the thickness T1 of the first light collimating unit 16, the thickness T2 of the second light collimating unit 22 and the thickness T3 of the third light collimating unit 28 may also be the same as each other. Here, the thickness of the light collimating unit refers to the sum of the thickness of the transparent substrate and the thickness of the patterned light shielding layer.

In some embodiments, the cross-sectional areas of the holes in the same patterned light shielding layer are the same. However, the cross-sectional areas of the holes in different patterned light-shielding layers may be different from each other. For example, the cross-sectional area of the hole O2 of the patterned light-shielding layer 20 may be smaller than the cross-sectional area of the hole O1 of the patterned light-shielding layer 14, and the cross-sectional area of the hole O1 of the patterned light-shielding layer 14 may be smaller than the hole of the patterned light-shielding layer 26 The cross-sectional area of O3, but the embodiment of the disclosure is not limited to this.

In some embodiments, a plurality of filter layers (not shown) may be formed in the holes O1 of the patterned light-shielding layer 14, the holes O2 of the patterned light-shielding layer 20 or the holes O3 of the patterned light-shielding layer 26. The filter layer may be formed of a polymer material or other suitable materials, which is used to restrict light of a specific wavelength to pass through these filter layers, while other wavelengths of light are blocked, but the embodiment of the disclosure is not limited thereto.

As shown in FIG. 4, the first light collimating unit 16, the second light collimating unit 22, and the third light collimating unit 28 are stacked and packaged on each other to form a package structure 30. In some embodiments, epoxy resin, other suitable encapsulating materials, or a combination of the above can be formed between the first light collimating unit 16 and the second light collimating unit 22, and the second light collimating unit 22 The package structure 30 is formed between the third light collimating unit 28 and the third light collimating unit 28, but the embodiment of the disclosure is not limited thereto.

In some embodiments, the holes O1 of the patterned light-shielding layer 14, the holes O2 of the patterned light-shielding layer 20 and the holes O3 of the patterned light-shielding layer 26 may be arranged corresponding to each other. It should be noted that although in the embodiment shown in FIG. 4, the second light collimating unit 22 is disposed on the first light collimating unit 16, and the third light collimating unit 28 is disposed on the second light collimating unit 22, so that the patterned light shielding layer 14 can be located between the transparent substrate 10 and the transparent substrate 18, and the patterned light shielding layer 20 can be located between the transparent substrate 18 and the transparent substrate 24, but the embodiment of the disclosure is not limited to this.

In some embodiments, the first light collimating unit 16, the second light collimating unit 22, and the third light collimating unit 28 may be stacked and packaged in other orders. In addition, the number of light collimating units of the package structure 30 is not limited to three. In some embodiments, the packaging structure 30 may only include a single light collimating unit and two light collimating units, or the packaging structure 30 may also include more than three light collimating units.

As shown in FIG. 5, the package structure 30 is formed on a conductive substrate 32 to form the semiconductor device 100. In some embodiments, the conductive substrate 32 may include elemental semiconductors (for example, silicon or germanium), compound semiconductors (for example, silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide ( InP)), alloy semiconductors (for example, SiGe, SiGeC, GaAsP or GaInP), other suitable semiconductors, or combinations of the foregoing, but the embodiments of the disclosure are not limited thereto. In some embodiments, the conductive substrate 32 may be a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate on the insulating layer may include a bottom plate, a buried oxide layer disposed on the bottom plate, and a semiconductor layer disposed on the buried oxide layer. In some embodiments, the conductive substrate 32 may be a semiconductor wafer (for example, a silicon wafer or other suitable semiconductor wafer).

In some embodiments, the conductive substrate 32 may include various p-type doped regions and/or n-type doped regions formed by processes such as ion implantation and/or diffusion. For example, the aforementioned doped regions can be configured to form transistors, photodiodes and/or light-emitting diodes, but the embodiments of the disclosure are not limited thereto.

In some embodiments, the conductive substrate 32 may include various isolation features to separate different device regions in the conductive substrate 32. For example, the isolation features may include shallow trench isolation (STI) features, but the embodiments of the disclosure are not limited thereto. In some embodiments, the step of forming shallow trench isolation may include etching a trench in the conductive substrate 32, and filling the trench with an insulating material (for example, silicon oxide, silicon nitride, or silicon oxynitride). ). The filled trench may have a multilayer structure (for example, a thermal oxide liner and silicon nitride filled in the trench). A chemical mechanical polishing (CMP) process can be performed to polish the excess insulating material and planarize the upper surface of the isolation feature.

In some embodiments, the conductive substrate 32 may include various conductive features (for example, conductive lines or vias). For example, the aforementioned conductive features can be formed of aluminum (Al), copper (Cu), tungsten (W), their respective alloys, other suitable conductive materials, or a combination of the foregoing.

In some embodiments, the conductive substrate 32 may include a plurality of pixels P, and the plurality of pixels P may be arranged in an array, but the embodiment of the disclosure is not limited thereto. In some embodiments, a pixel P of the conductive substrate 32 includes or corresponds to at least one photodiode and/or other suitable elements, which can convert the received optical signal into a current signal.

As shown in FIG. 5, the hole O1 of the patterned light-shielding layer 14, the hole O2 of the patterned light-shielding layer 20, and the hole O3 of the patterned light-shielding layer 26 can be arranged corresponding to the pixel P. In other words, the projection of the hole O1 of the patterned light-shielding layer 14, the hole O2 of the patterned light-shielding layer 20 and the hole O3 of the patterned light-shielding layer 26 on the top surface 32T of the conductive substrate 32 can overlap with the pixel P.

In the disclosed embodiment, the semiconductor device 100 can be used as a light collimator, which can adjust the holes O1 of the patterned light-shielding layer 14 according to the path of light, the holes O2 of the patterned light-shielding layer 20 and the holes O3 of the patterned light-shielding layer 26 The size of the light in the semiconductor device 100 is prevented from crosstalk. In addition, since the packaging structure 30 can be formed by packaging a plurality of light collimating units, the height and width of each of the light collimating units is relatively low (for example, between 0.5 and 15), thereby avoiding or reducing the collapse of the light collimating unit. At the same time, the semiconductor device 100 as a whole maintains good collimation performance (that is, the resolution sensed by the pixel P is improved).

Furthermore, since a plurality of light collimating units are first stacked and packaged to form a package structure 30, and then combined with the conductive substrate 32, the possibility of warpage of the conductive substrate 32 can be reduced, and the semiconductor device 100 can be increased. Reliability (reliability) and uniformity (uniformity).

FIG. 6 is a cross-sectional view of a biometric identification device 200 according to an embodiment of the invention. Here, the biometric recognition device 200 may be, for example, a fingerprint recognition device, but the embodiment of the disclosure is not limited thereto. It should be noted that for the sake of brevity, some components may be omitted in Figure 6.

As shown in FIG. 6, in some embodiments, the biometric device 200 may include a semiconductor device 100, a color filter layer 34, and a light source layer 36. The color filter layer 34 may be disposed between the semiconductor device 100 and the light source layer 36 .

For example, the semiconductor device 100 can be formed by the steps of the aforementioned FIGS. 1 to 5. Next, the color filter layer 34 can be disposed on the semiconductor device 100. The color filter layer 34 may be formed of a polymer material or other suitable materials, which is used to restrict light of a specific wavelength to pass through the color filter layer 34, and light of other wavelengths is blocked.

Then, the light source layer 36 can be disposed on the color filter layer 34. In some embodiments, the light source layer 36 may include light sources (for example, light emitting diodes) 38, and the light sources 38 may be arranged in an array, for example. In addition, the light source layer 36 may further include a barrier layer, other appropriate optical elements, or a combination of the foregoing (not labeled). A cover plate (for example, a glass cover plate) 40 may be provided on the top of the light source layer 36 to form a biometric identification device (for example, a fingerprint identification device). It should be understood that the light source layer 36 may include other components not shown in FIG. 6.

For example, the light emitted by the light source 38 may be blocked by external biological features (for example, fingerprint FP) to generate different reflected light L to pass through the color filter layer 34. The color filter layer 34 can restrict the light L1 of a specific wavelength corresponding to the pixel P (for example, including or corresponding to at least one photodiode and/or other suitable elements) to pass, and light of other wavelengths is blocked. The light L1 that has passed through the color filter layer 34 enters the third light collimating unit 28, the second light collimating unit 22 and the first light collimating unit 16 in sequence. Since the patterned light-shielding layer 26, the patterned light-shielding layer 20, and the patterned light-shielding layer 14 can be black (for example, formed of black photoresist, black ink, black molding compound or black solder mask), and the patterned light-shielding layer 14 The size (or cross-sectional area) of the hole O1, the hole O2 of the patterned light-shielding layer 20, and the hole O3 of the patterned light-shielding layer 26 are adjusted according to the light path, so that crosstalk between the lights L1 can be prevented and the biometric identification device 200 can be improved Recognition ability.

Following the above description, the packaging structure of the semiconductor device of the disclosed embodiment can be formed by a plurality of light collimating unit packages. The height and width of each of the light collimating units are relatively low, thereby avoiding or reducing the collapse of the light collimating unit. The semiconductor device as a whole maintains good collimation performance. Furthermore, since a plurality of light collimating units are first stacked and packaged to form a package structure, and then combined with the conductive substrate, the possibility of warping of the conductive substrate can be reduced, and the reliability and consistency of the semiconductor device can be increased. In addition, the identification capability of the biometric identification device using the semiconductor device of the embodiment of the disclosure can be effectively improved.

The components of the several embodiments are summarized above so that those with ordinary knowledge in the technical field of the present disclosure can better understand the viewpoints of the embodiments of the present disclosure. Those with ordinary knowledge in the technical field of the present disclosure should understand that they can design or modify other processes and structures based on the embodiments of the present disclosure to achieve the same purpose and/or advantages as the embodiments described herein. Those with ordinary knowledge in the technical field to which this disclosure belongs should also understand that such equivalent structures do not depart from the spirit and scope of this disclosure, and they can do everything without departing from the spirit and scope of this disclosure. Various changes, substitutions and replacements. Therefore, the protection scope of this disclosure shall be subject to the scope of the attached patent application. In addition, although the present disclosure has been disclosed in several preferred embodiments as described above, it is not intended to limit the present disclosure.

Reference to features, advantages, or similar language throughout this specification does not mean that all the features and advantages that can be achieved with the present disclosure should be or be in any single embodiment of the present disclosure. In contrast, language related to features and advantages is understood as meaning that a particular feature, advantage, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present disclosure. Thus, the discussion of features and advantages and similar language throughout the specification may but does not necessarily represent the same embodiment.

Furthermore, in one or more embodiments, the described features, advantages, and characteristics of the present disclosure may be combined in any suitable manner. Based on the description herein, those skilled in the relevant art will realize that the present disclosure can be implemented without one or more specific features or advantages of a specific embodiment. In other cases, additional features and advantages can be recognized in certain embodiments, and these features and advantages may not exist in all embodiments of the present disclosure.

100: Semiconductor device

10: Transparent substrate

12: Shading material

14: Patterned shading layer

16: Optical collimation unit

18: Transparent substrate

20: Patterned shading layer

22: Optical collimation unit

24: Transparent substrate

26: Patterned shading layer

28: Optical collimation unit

30: Package structure

32: conductive substrate

32T: Top surface

34: Color filter layer

36: light source layer

38: light source

40: cover

200: Biometric equipment

FP: Fingerprint

L, L1: light

O1, O2, O3: holes

P: pixel

T1, T2, T3: thickness

The embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings. It should be noted that the various characteristic components are not drawn to scale and are only used for illustrative purposes. In fact, the size of the element may be enlarged or reduced to clearly show the technical features of the embodiment of the disclosure. Figures 1 to 5 are a series of cross-sectional views illustrating a method of forming a semiconductor device according to an embodiment of the present invention. Figure 6 is a cross-sectional view of a biometric identification device according to an embodiment of the present invention.

100: Semiconductor device

10: Transparent substrate

14: Patterned shading layer

16: Optical collimation unit

18: Transparent substrate

20: Patterned shading layer

22: Optical collimation unit

24: Transparent substrate

26: Patterned shading layer

28: Optical collimation unit

30: Package structure

32: conductive substrate

32T: Top surface

O1, O2, O3: holes

P: pixel

Claims (20)

A semiconductor device, comprising: a conductive substrate having a plurality of pixels; and a packaging structure arranged on the conductive substrate, the packaging structure including a plurality of light collimating units, wherein each light collimating unit includes: a transparent A substrate; and a patterned light-shielding layer disposed on the transparent substrate, and the patterned light-shielding layer has a plurality of holes corresponding to the pixels. According to the semiconductor device described in item 1 of the scope of patent application, each pixel includes or corresponds to at least one photodiode. In the semiconductor device described in claim 1, wherein the light collimating units are stacked on each other. In the semiconductor device described in claim 3, the thickness of the light collimating units are different from each other. According to the semiconductor device described in claim 1, wherein the light collimating units include: a first light collimating unit, including a first transparent substrate and a first patterned light-shielding layer, the first patterned The light-shielding layer is disposed on the first transparent substrate, and the first patterned light-shielding layer has a plurality of first holes; and a second light collimating unit includes a second transparent substrate and a second patterned light-shielding layer, The second patterned shading layer is disposed on the second transparent substrate, and the second patterned shading layer has a plurality of second holes; wherein the first patterned shading layer is located on the first transparent substrate and the second transparent substrate between. For the semiconductor device described in item 5 of the scope of patent application, the first holes and the second holes are arranged corresponding to the pixels. In the semiconductor device described in claim 5, the cross-sectional area of each first hole is different from the cross-sectional area of each second hole. According to the semiconductor device described in claim 5, the thickness of the first transparent substrate is different from the thickness of the second transparent substrate. According to the semiconductor device described in claim 5, the thickness of the first patterned light-shielding layer is different from the thickness of the second patterned light-shielding layer. According to the first item of the patent application, the material of the transparent substrate includes glass, quartz, polyimide, liquid crystal polymer, polycarbonate, polypropylene, polyethylene terephthalate. According to the semiconductor device described in claim 1, wherein the material of the patterned light-shielding layer includes metal, photoresist, ink, molding compound, solder mask, epoxy resin, or a combination of the foregoing materials. According to the semiconductor device described in item 1 of the scope of patent application, each of the light collimating units further includes: a plurality of filter layers arranged in the holes. A method for manufacturing a semiconductor device includes: forming a light-shielding material on a transparent substrate; patterning the light-shielding material to form a patterned light-shielding layer with a plurality of holes, wherein the transparent substrate and the patterned light-shielding layer define A light collimating unit; forming a plurality of the light collimating units; stacking and packaging the light collimating units on each other to form a packaging structure; and The packaging structure is formed on a conductive substrate, wherein the conductive substrate has a plurality of pixels, and the holes are arranged corresponding to the pixels. According to the method of manufacturing a semiconductor device described in the scope of the patent application, the holes in the light collimating units are arranged corresponding to each other. According to the method of manufacturing a semiconductor device as described in claim 14, wherein the thicknesses of the light collimating units are different from each other. As described in item 13 of the scope of patent application, the method of manufacturing a semiconductor device further includes: polishing the transparent substrate. According to the manufacturing method of the semiconductor device described in the scope of patent application, the light shielding material is coated on the transparent substrate. The method for manufacturing a semiconductor device as described in item 13 of the scope of the patent application further includes forming a plurality of filter layers in the holes. A biometric identification device includes: the semiconductor device as described in any one of items 1 to 12 in the scope of the patent application; a light source layer arranged on the semiconductor device; and a cover plate arranged on the light source layer. As described in item 19 of the scope of patent application, the biometric identification device further includes: a color filter layer disposed between the semiconductor device and the cover plate.

Images