TWI706050B - Device for supplying process gas in coating device - Google Patents
Device for supplying process gas in coating device Download PDFInfo
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- TWI706050B TWI706050B TW106100834A TW106100834A TWI706050B TW I706050 B TWI706050 B TW I706050B TW 106100834 A TW106100834 A TW 106100834A TW 106100834 A TW106100834 A TW 106100834A TW I706050 B TWI706050 B TW I706050B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本發明係有關於一種用於在塗佈裝置中提供製程氣體之裝置,該裝置具有殼體(1)及佈置於該殼體中且包含用於液態或固態起始材料之蒸發裝置(3、3'、3")的源殼體(2),具有通入該源殼體(2)以產生穿過該源殼體(2)之第一氣流(5)的第一氣體輸送管線(4),具有將該第一氣流(5)自該源殼體(2)排入運送管線(7)之第一排氣通道(6),具有通入該殼體(1)以產生在該源殼體(2)外穿過該殼體(1)之第二氣流(9)的第二氣體輸送管線(8),且具有將該第二氣流(9)自該殼體(1)排入該運送管線(7)之第二排氣通道(10),該第二排氣通道將該第一排氣通道(6)包圍,並且在該第二排氣通道中佈置有反向擴散障壁(11)。根據本發明,該反向擴散障壁(11)被構建為能實現該排氣通道(6)之兩個特別是相對佈置的壁段相對地改變位置。 The present invention relates to a device for providing process gas in a coating device. The device has a housing (1) and an evaporation device (3, 3', 3") source housing (2), with a first gas delivery line (4) that opens into the source housing (2) to generate a first gas flow (5) passing through the source housing (2) ), having a first exhaust channel (6) that discharges the first airflow (5) from the source housing (2) into the conveying pipeline (7), and has a first exhaust passage (6) that passes into the housing (1) to generate in the source The second gas delivery line (8) of the second gas flow (9) passing through the casing (1) outside the casing (2), and having the second gas flow (9) discharged from the casing (1) The second exhaust passage (10) of the conveying pipeline (7), the second exhaust passage surrounds the first exhaust passage (6), and a reverse diffusion barrier (10) is arranged in the second exhaust passage ( 11) According to the present invention, the reverse diffusion barrier (11) is constructed to enable the two particularly oppositely arranged wall sections of the exhaust channel (6) to relatively change positions.
Description
本發明係有關於一種用於在塗佈裝置中提供製程氣體之裝置,該裝置具有用於液態或固態起始材料的蒸發裝置,該蒸發裝置佈置在源殼體中。藉由第一氣體輸送管線將具有液態或固態氣膠粒子之氣膠輸入源殼體。氣膠粒子在該處被蒸發。蒸汽透過排氣通道自源殼體排出。藉由運送管線將蒸發裝置所形成的蒸汽輸入製程室,排氣機構位於該製程室中,蒸汽透過該排氣機構排出,以便冷凝在佈置在製程室中、特別是佈置在經冷卻之基座上的基板上。 The present invention relates to a device for supplying process gas in a coating device. The device has an evaporation device for liquid or solid starting materials, and the evaporation device is arranged in a source housing. The aerosol with liquid or solid aerosol particles is input into the source housing through the first gas delivery pipeline. The aerosol particles are evaporated there. The steam is discharged from the source shell through the exhaust passage. The steam formed by the evaporation device is fed into the process chamber through the conveying line, the exhaust mechanism is located in the process chamber, and the steam is discharged through the exhaust mechanism so as to be condensed in the process chamber, especially on the cooled base On the substrate.
WO 2012/175128 A1描述一種蒸發裝置,其在氣膠之流動方向上具有兩個相繼佈置之傳熱元件。此二傳熱元件由導電的固態發泡體構成,固態發泡體以通電方式被加熱。WO 2012/175124 A1、WO 2010/175126 A1、DE 10 2011 051 261 A1或DE 10 2011 051 260 A1描述類似裝置。 WO 2012/175128 A1 describes an evaporation device which has two heat transfer elements arranged one after the other in the flow direction of the aerosol. The two heat transfer elements are made of conductive solid foam, and the solid foam is heated by energization. WO 2012/175124 A1, WO 2010/175126 A1, DE 10 2011 051 261 A1 or DE 10 2011 051 260 A1 describe similar devices.
由US 4,769,296及US 4,885,211已知由有機起始材料構成之發光二極體(OLED)的製造。為製造OLED,必須將固態或液態起始材料轉化為氣態。此點用蒸發器來實施。 From US 4,769,296 and US 4,885,211, the production of light emitting diodes (OLED) composed of organic starting materials is known. In order to manufacture OLEDs, solid or liquid starting materials must be converted into a gaseous state. This is done with an evaporator.
DE 10 2014 115 497 A1描述一種用於沉積OLED之裝置。其中描述了一種用於在塗佈裝置中提供製程氣體之裝置,其中 液態或固態起始材料被蒸發裝置所蒸發。透過第一排氣通道將運載氣體所運送之蒸汽自源殼體引入運送管線。第二氣體輸送管線為排出第二氣流而與該運送管線連通,用該第二氣流將包含蒸汽的第一氣流稀釋。 DE 10 2014 115 497 A1 describes a device for depositing OLEDs. It describes a device for supplying process gas in a coating device, where The liquid or solid starting material is evaporated by the evaporation device. The steam carried by the carrier gas is introduced from the source shell into the conveying pipeline through the first exhaust passage. The second gas conveying line is connected to the conveying line for discharging the second gas stream, and the first gas stream containing steam is diluted with the second gas stream.
DE 10 2014 109 196描述一種用於以固態或液態起始材料為CVD或PVD裝置產生蒸汽之裝置,其中藉由第一輸送管線將第一氣流輸入源殼體。第一輸送管線由管道構成,此等管道之開口端與傳熱元件連通。其他傳熱元件位於此傳熱元件下游,此等其他傳熱元件分別以通電方式被加熱。 DE 10 2014 109 196 describes a device for generating steam from a solid or liquid starting material as a CVD or PVD device, in which a first gas stream is fed into a source housing through a first delivery line. The first transfer pipeline is composed of pipes, and the open ends of these pipes are in communication with the heat transfer element. Other heat transfer elements are located downstream of this heat transfer element, and these other heat transfer elements are respectively heated by energization.
US 2010/0206231 A1、US 2010/0012036 A1、JP 0800823 A及EP 2 819 150 A2描述一種在CVD反應器之製程室下游佈置在排氣管內之迷宮式密封裝置或反向擴散障壁,以防止反向擴散至製程室。
US 2010/0206231 A1, US 2010/0012036 A1, JP 0800823 A, and
本發明之目的在於,對用於提供製程氣體之裝置進行改良以利其使用。 The purpose of the present invention is to improve the device for supplying process gas to facilitate its use.
本發明用以達成上述目的之解決方案首先且大體上在於一種用於在塗佈裝置中提供製程氣體之裝置,該裝置具有殼體及佈置於該殼體中且包含用於液態或固態起始材料之蒸發裝置的源殼體,具有通入該源殼體以產生穿過該源殼體之第一氣流的第一氣體輸送管線,具有將該第一氣流自該源殼體排入該運送管線之第一排氣通道,具有通入該殼體以產生在該源殼體外穿過該殼體之第二氣流的第二氣體輸送管線,且具有將該第二氣流自該殼體排入該運送管線之第二排氣通道,該第二排氣通道將該第一排氣通道包 圍,並且在該第二排氣通道中佈置有反向擴散障壁。 The solution of the present invention to achieve the above-mentioned objects first and generally consists in a device for providing process gas in a coating device, the device has a housing and is arranged in the housing and includes a device for liquid or solid starting The source housing of the material evaporating device has a first gas delivery line that passes into the source housing to generate a first gas flow through the source housing, and has a first gas delivery line that discharges the first gas flow from the source housing into the transport The first exhaust passage of the pipeline has a second gas delivery pipeline that opens into the housing to generate a second air flow through the housing outside the source housing, and has a second gas delivery line that discharges the second air flow from the housing The second exhaust passage of the conveying pipeline, the second exhaust passage encloses the first exhaust passage And a reverse diffusion barrier is arranged in the second exhaust passage.
附屬項除為此種裝置之有益改良方案外,亦為此項目的之獨創解決方案。 In addition to a beneficial improvement plan for this device, the accessory item is also an original solution for this project.
以下特徵用於獨立或組合地達成該目的,即對前述裝置進行技術優化:源殼體可在第二排氣通道之區域內小幅地相對容置該源殼體之殼體位移,此點隨著該第二排氣通道之兩個相對佈置之壁部的距離發生改變而進行。反向擴散障壁允許此種相對位移的發生。反向擴散障壁由多個障壁元件構成。第一障壁元件可被固定在源殼體上。第二障壁元件可被固定在將該源殼體包圍之裝置殼體上。第二排氣通道之一壁部由源殼體之組成部分構成,第二排氣通道之另一壁部由裝置殼體之組成部分構成。第二排氣通道之橫截面呈環形,其中徑向內側的通道壁部由源殼體構成,徑向外側的通道壁部由裝置殼體構成。固定在源殼體上之第一障壁元件具有自由邊緣,該障壁元件以該自由邊緣與第二排氣通道之相對佈置的壁部隔開。第二障壁元件被固定在裝置殼體上且具有自由邊緣,該自由邊緣與排氣通道之相對佈置的壁部隔開。該二障壁元件可相對位移。本發明提出,該二障壁元件以密封之方式相接觸。該二障壁元件可施加剪力地沿接觸面滑動。該等障壁元件中的至少一者可為透氣的。透氣的障壁元件可具有數個通氣孔。氣體障壁元件可由環盤形體構成。與源殼體連接之第一障壁元件具有徑向內邊緣及徑向外邊緣,該內邊緣係指固定邊緣,第一障壁元件以該固定邊緣固定在該源殼體上,該外邊緣係指自由邊緣。第二障壁元件具有徑向外邊緣,該外邊緣為固定邊緣,該障壁元件以該固定邊緣固定在裝置殼體上。第二障壁元件具有自由邊緣,該自由邊緣與第二排氣通道之
相對佈置的壁部隔開。因此,該二較佳障壁元件要麼以不可動之方式相對裝置殼體固定在源殼體上,要麼相對源殼體可動地以不可動之方式固定在裝置殼體上。本發明提出,不透氣的障壁元件以相互背離之表面以接觸之方式各貼靠在一具有通氣孔之障壁元件上。不透氣的障壁元件可固定在裝置殼體上。該二具有通氣孔之障壁元件可固定在源殼體上。但亦可採用相反的配置方案。障壁元件可為扁平的環形體,其在第二氣流之流動方向上交替地以接觸之方式彼此貼靠。此種障壁元件交替地固定在第二排氣通道之相對佈置的壁部上,較佳交替地固定在源殼體上或裝置殼體上。該源殼體可相對該裝置殼體在平面內移動,障壁元件可在該平面內相對地位移。引發此種移動之原因可能在於加熱蒸發裝置時的熱膨脹。通氣孔被以某種方式構建及佈置,使其在障壁元件相對位移時不會被封閉。本發明特別提出,透氣的障壁元件之通氣孔與該障壁元件之自由邊緣的距離大於不透氣的障壁元件之自由邊緣與固定邊緣的距離。該二障壁元件與第二排氣通道之可相對位移的壁部對應,使得即使在排氣通道之該二壁部的極端相對位移位置上,通氣孔亦不會被封閉,但確保相對位移中之障壁元件相互重疊。為此,本發明特別提出,不透氣的障壁元件之自由邊緣與固定邊緣的距離與透氣的障壁元件之自由邊緣與其固定邊緣的距離之和大於第二排氣通道之該二保持該等障壁元件的壁部之間的最大可能距離。藉此,確保至少兩個障壁元件即使在源殼體相對裝置殼體達到最大位移程度時亦在第二排氣通道之整個周向延伸範圍內相互重疊。源殼體可具有下端面,障壁元件固定在該下端面上。該下端面將第一排氣通道之開口包圍,包含蒸汽之第一氣流穿過該第一排氣通道排出。源殼體之大
體上呈管道形的區段構成該開口或端緣。該管道形區段之徑向內壁構成第一排氣通道之壁部。該管道形區段之徑向朝外的壁部構成第二排氣通道之壁部。間隙空間在流動方向上位於第一排氣通道之出口的下游,該間隙空間將運送管線環形包圍。擴散障壁之通氣孔與該間隙空間連通。可用特別是用於加熱構成蒸發裝置之固態發泡體的加熱裝置,將該蒸發裝置及源殼體加熱至一高於裝置殼體所保持之溫度的溫度。因此,該裝置具有第一殼體,在該第一殼體中佈置有通氣孔且該第一殼體之溫度可高於第二殼體,該第二殼體將該第一殼體包圍且通過沖洗氣體,該沖洗氣體在運送管線中與通過該第一殼體之氣流混合,為此,為防止自該運送管線向該第二殼體之包圍該第一殼體的體積區域發生反向擴散而設置反向擴散障壁,構成該第二氣流之沖洗氣流必須穿過該反向擴散障壁。反向擴散障壁之通氣孔導致局部流速變大。蒸發裝置具有包含開口之傳熱元件,輸送管插設在該開口中。輸送管之出口位於第二傳熱元件之上游區域內。可在該二傳熱元件之間設置一中間室。此種蒸發元件之技術方案請參閱DE 10 2014 109 196之內容,該案的全部內容皆納入本申請之揭示內容。DE 10 2014 115 497描述一種輸送管線系統,用該輸送管線系統將在蒸發裝置中產生之蒸汽經過多次稀釋引入反應器之製程室中,該案的揭示內容皆納入本專利申請之揭示內容。根據一種較佳的技術方案,該裝置具有三個環,其中至少兩個環具有均勻分佈在圓弧線上之孔洞,該等孔洞形成通氣孔。該等環係相疊佈置且交替地內外居中。藉此防止反向擴散,並且以該源殼體相對該裝置殼體之中心位置觀之,對相關公差實施補償。因通氣孔之均勻佈局而形成均勻的流體分佈。該裝置用於蒸發液態或粉末狀材
料,且由佈置在第一殼體中之蒸發單元構成。第二殼體將第一殼體封裝且具有殼體壁,該等殼體壁與該第一殼體之壁部隔開,從而形成將該第一殼體包圍之空腔。該第一殼體具有將包含蒸汽之第一氣流排出的排氣通道。該排氣通道形成收集區,所形成之蒸汽收集在該收集區內,且已蒸發之材料穿過該收集區到達一介面,在該介面上將第二氣流輸入。用該第二氣流沖洗該介面,使得蒸汽無法回流入第二殼體之將第一殼體包圍的空腔。反向擴散障壁係被構建成使得第一殼體之區域內的溫度變化不會導致該介面中之氣流發生改變。設有用於氣體流量控制之裝置。為此,可使用質量流量控制器或類似控制器。由環形元件構成之障壁元件可以匹配之形狀疊置。
The following features are used to achieve this goal independently or in combination, that is, the technical optimization of the aforementioned device: the source housing can be slightly displaced relative to the housing housing the source housing in the area of the second exhaust passage, and this point varies with The second exhaust passage changes the distance between the two oppositely arranged walls. The back diffusion barrier allows this relative displacement to occur. The reverse diffusion barrier is composed of multiple barrier elements. The first barrier element may be fixed on the source housing. The second barrier element can be fixed on the device casing surrounding the source casing. One wall of the second exhaust passage is constituted by a component of the source casing, and the other wall of the second exhaust passage is constituted by a component of the device casing. The cross section of the second exhaust passage is annular, in which the radially inner passage wall is constituted by the source casing, and the radially outer passage wall is constituted by the device casing. The first barrier wall element fixed on the source housing has a free edge, and the barrier wall element is separated from the oppositely arranged wall portion of the second exhaust channel by the free edge. The second barrier wall element is fixed on the device housing and has a free edge which is separated from the oppositely arranged wall of the exhaust channel. The two barrier elements can be relatively displaced. The present invention proposes that the two barrier elements are in contact with each other in a sealed manner. The two barrier elements can slide along the contact surface with shear force. At least one of the barrier elements may be breathable. The air-permeable barrier element may have several vent holes. The gas barrier element may be composed of an annular disc-shaped body. The first barrier element connected to the source housing has a radial inner edge and a radial outer edge. The inner edge refers to a fixed edge. The first barrier element is fixed on the source housing by the fixed edge, and the outer edge refers to Free edge. The second barrier element has a radially outer edge, the outer edge is a fixed edge, and the barrier element is fixed on the device housing by the fixed edge. The second barrier element has a free edge, and the free edge is between the second exhaust channel
The oppositely arranged walls are separated. Therefore, the two preferred barrier elements are either fixed to the source housing relative to the device housing in an immovable manner, or fixed to the device housing in a movable manner relative to the source housing. The present invention proposes that the air-impermeable barrier elements are each abutted on a barrier element with a vent hole in a manner of contacting surfaces facing away from each other. The air-impermeable barrier element can be fixed on the device housing. The two barrier elements with vent holes can be fixed on the source housing. But the opposite configuration scheme can also be adopted. The barrier element may be a flat annular body, which abuts against each other in a contacting manner alternately in the flow direction of the second air flow. Such barrier elements are alternately fixed on oppositely arranged walls of the second exhaust passage, preferably alternately fixed on the source housing or the device housing. The source housing can move in a plane relative to the device housing, and the barrier element can be relatively displaced in the plane. This movement may be caused by thermal expansion when heating the evaporation device. The vent is constructed and arranged in a certain way so that it will not be closed when the barrier element is relatively displaced. The present invention specifically proposes that the distance between the vent hole of the air-permeable barrier element and the free edge of the barrier element is greater than the distance between the free edge and the fixed edge of the air-impermeable barrier element. The two barrier wall elements correspond to the relatively displaceable wall of the second exhaust passage, so that even at the extreme relative displacement position of the two walls of the exhaust passage, the vent hole will not be closed, but the relative displacement is ensured The barrier elements overlap each other. For this reason, the present invention specifically proposes that the sum of the distance between the free edge of the air-impermeable barrier element and the fixed edge and the distance between the free edge of the air-permeable barrier element and the fixed edge is greater than that of the second exhaust channel. The maximum possible distance between the walls. Thereby, it is ensured that at least two barrier elements overlap each other within the entire circumferential extension range of the second exhaust channel even when the source housing reaches the maximum displacement relative to the device housing. The source housing may have a lower end surface, and the barrier element is fixed on the lower end surface. The lower end surface surrounds the opening of the first exhaust passage, and the first airflow containing steam is discharged through the first exhaust passage. Source shell size
The pipe-shaped section on the body constitutes the opening or the end edge. The radial inner wall of the pipe-shaped section constitutes the wall of the first exhaust passage. The radially outward wall of the pipe-shaped section constitutes the wall of the second exhaust passage. The clearance space is located downstream of the outlet of the first exhaust passage in the flow direction, and the clearance space surrounds the conveying pipeline annularly. The vent hole of the diffusion barrier is connected with the interstitial space. A heating device, particularly for heating the solid foam constituting the evaporation device, can be used to heat the evaporation device and the source housing to a temperature higher than the temperature maintained by the device housing. Therefore, the device has a first housing in which a vent is arranged and the temperature of the first housing can be higher than that of the second housing, which surrounds the first housing and With the flushing gas, the flushing gas is mixed in the conveying line with the airflow passing through the first housing. For this reason, to prevent the reversal from the conveying line to the volume area of the second housing surrounding the first housing A reverse diffusion barrier is provided for diffusion, and the flushing airflow constituting the second airflow must pass through the reverse diffusion barrier. The vent holes of the back diffusion barrier cause the local flow velocity to increase. The evaporator has a heat transfer element including an opening, and the conveying tube is inserted in the opening. The outlet of the conveying pipe is located in the upstream area of the second heat transfer element. An intermediate chamber can be arranged between the two heat transfer elements. Please refer to the content of
1‧‧‧殼體 1‧‧‧Shell
2‧‧‧源殼體 2‧‧‧Source shell
3‧‧‧蒸發裝置 3‧‧‧Evaporation device
3'‧‧‧蒸發裝置 3'‧‧‧evaporator
3"‧‧‧蒸發裝置 3"‧‧‧evaporator
4‧‧‧第一氣體輸送管線 4‧‧‧The first gas transmission pipeline
5‧‧‧第一氣流 5‧‧‧First Air
6‧‧‧第一排氣通道 6‧‧‧First exhaust passage
7‧‧‧運送管線 7‧‧‧Transportation pipeline
8‧‧‧第二氣體輸送管線 8‧‧‧Second gas pipeline
9‧‧‧第二氣流 9‧‧‧Second Airflow
10‧‧‧第二排氣通道 10‧‧‧Second exhaust channel
11‧‧‧擴散障壁 11‧‧‧Diffusion barrier
12‧‧‧障壁元件 12‧‧‧Barrier element
13‧‧‧通氣孔 13‧‧‧Vent
14‧‧‧障壁元件 14‧‧‧Barrier element
15‧‧‧通氣孔 15‧‧‧Vent
16‧‧‧障壁元件 16‧‧‧Barrier element
17‧‧‧間隙空間 17‧‧‧Interstitial space
18‧‧‧罩蓋 18‧‧‧Cover
19‧‧‧端面 19‧‧‧End face
20‧‧‧階梯 20‧‧‧Stairs
Z‧‧‧中心線 Z‧‧‧Centerline
下面結合所附圖式詳細闡述本發明。其中:圖1為裝置沿中心Z剖開後之截面圖,圖2為根據圖1中的局部II之截面圖,圖3為根據圖1中的局部III之截面圖,圖4為沿圖1中的IV-IV線剖開後之截面圖,圖5為圖1中繪示為橫截面之裝置剖開後的透視圖,圖6為根據圖2之示意圖,但具有偏心偏移量,及圖7為具有該偏心偏移量的根據圖3之示意圖。 The present invention will be described in detail below in conjunction with the accompanying drawings. Among them: Fig. 1 is a cross-sectional view of the device taken along the center Z, Fig. 2 is a cross-sectional view according to part II in Fig. 1, Fig. 3 is a cross-sectional view according to part III in Fig. 1, and Fig. 4 is taken along Fig. 1 A cross-sectional view taken along the line IV-IV in FIG. 5 is a perspective view of the device shown as a cross-section in FIG. 1, and FIG. 6 is a schematic diagram according to FIG. 2, but with an eccentric offset, and Fig. 7 is a schematic diagram according to Fig. 3 with the eccentric offset.
如DE 10 2014 109 196中所述,圖式中所繪示之裝置為應用於CVD或PVD裝置的蒸汽源,或者如DE 10 2014 115 497所述,將該裝置在CVD或PVD裝置中用作系統組件。
As described in
裝置採用兩個殼體1、2大體上圍繞中心線Z旋轉對
稱之佈局。第一殼體構成被裝置殼體包圍之源殼體2,該裝置殼體構成第二殼體1。一空腔位於殼體1之內壁與佈置在殼體1中之源殼體2的外壁之間。源殼體2內同樣存在空腔。源殼體2固定在殼體1之罩蓋18上,可將該罩蓋與殼體1之柱形側壁或與源殼體2之柱形側壁連接。
The device uses two
第一氣體輸送管線4穿過罩蓋18伸入源殼體2之空腔。三個在流動方向上相繼佈置之蒸發裝置3、3'、3"位於源殼體2內,該等蒸發裝置可以通電方式被加熱,並且該等蒸發裝置由開孔發泡體構成。蒸發裝置3、3'、3"將源殼體2之腔體的橫截面完全裝滿。透過第一氣體輸送管線4並藉由運載氣體流將具有液態或固態有機粒子之氣膠輸入。氣膠自第一氣體輸送管線4之開口排入蒸發裝置3、3'、3"中的一者,氣膠粒子在該處吸熱蒸發。為此將蒸發裝置3、3'、3"加熱至升高的溫度T1,該溫度高於冷凝溫度,即高於有機粒子之蒸發溫度。形成包含已蒸發氣膠粒子之蒸汽的第一氣流5。蒸發裝置3、3'、3"之工作原理及其他可能的技術方案請參閱DE 10 2014 109 196。
The first gas delivery line 4 extends through the
第一氣流5穿過橫截面縮小的區段進入第一排氣通道6,該排氣通道具有圓盤形橫截面,且由源殼體2之呈管道形的出口段構成。出口段構成包圍第一排氣通道6之排出口的端面19。
The
端面19與階梯20相對佈置,該階梯由殼體1之壁段形成。階梯20上連接有運送管線7,該運送管線將第一氣流5導入CVD或PVD裝置之製程室,在該製程室中將OLED層沉積在位於基座上的基板上。運送管線系統之可能的技術方案請參閱DE 10 2014 115 497。
The
在罩蓋18中佈置有相對第一氣體輸送管線4徑向向外偏移的第二氣體輸送管線8,可透過該第二氣體輸送管線將運載氣體或沖洗氣體輸入殼體1之包圍源殼體2的腔體,從而形成從源殼體2旁邊流過之第二氣流9。第二氣流9穿過圓環形空腔,該空腔沿下游方向橫截面縮小且在該處構成第二排氣通道10。第二排氣通道10之內壁由源殼體2之管道形端部形成。因此,管道形端部以其內側構成第一排氣通道6之壁部且以其外側構成第二排氣通道10之壁部。第二排氣通道10將第一排氣通道6環形包圍。第二排氣通道10之第二壁部由殼體1之區段構成。第二排氣通道10與間隙空間17連通,該間隙空間將第一排氣通道6及運送管線7之出口環形包圍。間隙空間在端面19與階梯20之間延伸。
A second
為防止第一氣流5中所包含之已蒸發的有機起始材料之蒸汽流入第二排氣通道10之較冷區域,在第二排氣通道10與第一排氣通道6之間的介面上設有擴散障壁11。該擴散障壁防止有機蒸汽反向擴散進包圍源殼體2的腔體,該腔體之壁部保持一溫度T2,該溫度低於蒸汽之冷凝溫度,否則蒸汽可能凝聚於該處。
In order to prevent the vapor of the evaporated organic starting material contained in the
擴散障壁11由多個扁平之環形障壁元件12、14、16構成。障壁元件12、14、16各具有一固定邊緣及一自由邊緣,該等障壁元件藉由該固定邊緣固定在第二排氣通道10之一壁部上,且該自由邊緣與第二排氣通道10之相對佈置的壁部隔開。基於該間隙且由於分配給第二排氣通道10之不同壁部的障壁元件12、14、16僅以接觸之方式抵靠,源殼體2之出口端可相對殼體1位移。圖2示出源殼體2相對殼體1之相對位置,在該相對位置上殼體1與源殼體2之中心軸Z一致。上述方案係指源殼體2相對殼體1之
中心佈局。
The
圖6及圖7示出源殼體2相對殼體1之偏心佈局。此種偏心佈局之原因可能在於源殼體2之機械變形,由於蒸發裝置3、3'、3"內的升高溫度T1而導致該變形。蒸發裝置3、3'、3"之溫度高於蒸汽之冷凝溫度,且高於殼體1之壁部溫度T2。
6 and 7 show the eccentric layout of the
環盤形障壁元件12具有數個沿障壁元件12整周分佈於一圓弧線上的通氣孔13。通氣孔13緊鄰源殼體2之外壁。障壁元件12以其固定邊緣固定在源殼體2或出口段之端面19的環形凹槽中。障壁元件12之自由邊緣段與第二排氣通道10之相對佈置的壁部隔開,該第二排氣通道由殼體1形成。
The annular disc-shaped
障壁元件14在流動方向上在障壁元件12前被固定在第二排氣通道10之徑向內側的壁部上,且同樣具有在圓形周界線上均勻分佈之通氣孔15。
The
障壁元件16以固定邊緣段被固定在第二排氣通道10之徑向外壁上。該障壁元件16位於該二障壁元件12、14之間且形成兩個相互背離之寬面區。在該等寬面區中的每一者上以接觸的方式抵靠有障壁元件12、14中之一者的寬面區。因此,障壁元件12、14間之距離等於障壁元件16之材料厚度。障壁元件12、14、16以接觸及密封的方式貼靠疊置,且可在垂直於中心線Z延伸之平面內相對位移,例如自圖2及圖3中所繪示之位置位移至圖6及圖7中所繪示之位置。
The
通氣孔13、15與所屬之障壁元件12、14的自由邊緣間隔一定距離,此距離使得通氣孔即使在極端位移位置上亦不會被障壁元件16封閉。因此,障壁元件16僅以一距離伸入第二排氣通
道10,該距離小於或等於通氣孔13、15與障壁元件12、14之相應自由邊緣的距離。此外,障壁元件12、14、16亦具有一即使在源殼體2相對裝置殼體1達到最大位移程度時亦使其整周重疊的寬度。為此,透氣的障壁元件12、14之通氣孔13、15與障壁元件之自由邊緣的徑向距離構成第一距離。不透氣的障壁元件16之自由邊緣與固定邊緣的距離,即該障壁元件之徑向寬度,構成第二距離。第三距離為透氣的障壁元件12、14之自由邊緣與其固定邊緣的距離,即障壁元件在第二排氣通道10內之徑向寬度。第四距離為第二排氣通道10之最大寬度,即第二排氣通道10之由源殼體2所構成之壁部與殼體1所構成之壁部之間的最大距離。本發明特別提出,第一距離大於第二距離,且第二距離與第三距離之和大於第四距離。
The air vents 13 and 15 are spaced from the free edges of the
障壁元件12、14、16較佳由耐腐蝕金屬或陶瓷材料製成。上述方案係指在其自由邊緣區域內以接觸及密封之方式相互重疊的障壁元件12、14、16,其中障壁元件12、14、16呈圓環形,且障壁元件16不透氣,並且較佳地,兩個與第二排氣通道10之同一壁部固定連接的障壁元件12、14具有較佳彼此錯開佈置之通氣孔13、15。第二氣流9穿過上游的通氣孔15進入環形的中間室,該中間室形成於該二障壁元件12、14之間。第二氣流9穿過通氣孔13自該中間室排入間隙空間17,該間隙空間環形包圍運送管線7之出口。自間隙空間17排出之第二氣流9連同自第一排氣通道6排出之第一氣流5進入運送管線7,該二氣流在該處混合。第二氣流9可由不易發生反應的惰性氣體構成。第一氣流5包含透過第一氣體輸送管線4輸入之運載氣體,特別是惰性運載氣體,及在蒸發
裝置3、3'、3"中所形成之蒸汽。因此,將第二氣流9輸入第一氣流5便能取得稀釋效果。
The
前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之進一步方案:一種用於在塗佈裝置中提供製程氣體之裝置,該裝置具有殼體1及佈置於該殼體中且包含用於液態或固態起始材料之蒸發裝置3、3'、3"的源殼體2,具有通入源殼體2以產生穿過源殼體2之第一氣流5的第一氣體輸送管線4,具有將第一氣流5自源殼體2排入運送管線7之第一排氣通道6,具有通入殼體1以產生在源殼體2外穿過殼體1之第二氣流9的第二氣體輸送管線8,且具有將第二氣流9自殼體1排入運送管線7之第二排氣通道10,該第二排氣通道將第一排氣通道6包圍且在該第二排氣通道中佈置有反向擴散障壁11。
The foregoing embodiments are used to illustrate the inventions contained in the application as a whole. These inventions independently constitute a further solution to the prior art through at least the following feature combinations: a device for supplying process gas in a coating device, the device There is a
一種裝置,其特徵在於,反向擴散障壁11被構建為能實現排氣通道6之兩個特別是相對佈置的壁段相對地改變位置。
A device is characterized in that the
一種裝置,其特徵在於,反向擴散障壁11具有至少一不可動地固定在源殼體2上之第一障壁元件12及至少一不可動地固定在殼體1上之第二障壁元件16,其中該二障壁元件12、16以密封且可相對位移之方式相接觸,並且至少一障壁元件12、16為透氣的。
A device characterized in that the
一種裝置,其特徵在於,反向擴散障壁11之透氣的障壁元件12具有數個通氣孔13。
A device characterized in that the gas-
一種裝置,其特徵在於,反向擴散障壁11之不透氣
的障壁元件以相互背離之表面以接觸之方式各貼靠在一具有通氣孔13、15之障壁元件12、14上。
A device characterized in that the
一種裝置,其特徵在於,反向擴散障壁11具有至少一障壁元件12、14,該障壁元件以固定邊緣固定在第二排氣通道10之由源殼體2構成的壁部上且具有自由邊緣,該自由邊緣與第二排氣通道10之由殼體1構成的相對佈置的壁部隔開,並且反向擴散障壁具有至少一障壁元件16,該障壁元件以其固定邊緣固定在第二排氣通道10之由殼體1構成的壁部上,且其自由邊緣與第二排氣通道10之由源殼體2構成的相對佈置的壁部隔開。
A device, characterized in that the
一種裝置,其特徵在於,障壁元件12、14、16為扁平的環形體,其在第二氣流9之流動方向上交替地佈置在第二排氣通道10之由源殼體2形成的內壁上或第二排氣通道10之由殼體1形成的外壁上。
A device characterized in that the
一種裝置,其特徵在於,透氣的障壁元件12、14之通氣孔13、15與障壁元件12、14之自由邊緣的第一距離大於不透氣的障壁元件16之自由邊緣與其固定邊緣的第二距離,且第二距離與透氣的障壁元件12、14之自由邊緣與其固定邊緣的第三距離之和大於第二排氣通道10之該二保持障壁元件12、14、16的壁段之間的最大可能距離。
A device characterized in that the first distance between the air holes 13, 15 of the air-
一種裝置,其特徵在於,由多個障壁元件12、14、16構成之反向擴散障壁11佈置在源殼體2之固定在殼體1之罩蓋18上的下游自由端上,源殼體之端面19在垂直方向上與階梯20隔開,使得擴散障壁11之通氣孔13與間隙空間17連通。
A device characterized in that a
一種裝置,其特徵在於,擴散障壁之自由通氣橫截面
在障壁元件12發生相對位移時保持不變。
A device characterized in that the free venting cross section of the diffusion barrier
When the
一種裝置,其特徵在於,蒸發裝置3、3'、3"可被加熱至溫度T1,該溫度高於殼體1之溫度T2。
A device characterized in that the
一種裝置,其特徵在於,蒸發裝置3、3'、3"由開孔的固態發泡體構成,該等固態發泡體可以通電方式被加熱至升高的溫度T1。
A device characterized in that the
一種裝置,其特徵在於,該裝置為具有製程室的CVD或PVD裝置之組成部分,運送管線7與該製程室連通,且在該製程室中對基板實施塗佈。
A device is characterized in that the device is a component of a CVD or PVD device having a process chamber, a conveying
所有已揭露特徵(自身或其組合即)為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於在該等請求項基礎上進行分案申請。 All the disclosed features (by themselves or in combination) are the essence of the invention. Therefore, the disclosed content of this application also includes all the content disclosed in the related/attached priority files (copy of the earlier application), and the features described in these files are also included in the scope of patent application of this application. The appendix describes the characteristics of the improvement scheme of the present invention with respect to the prior art, and its purpose is to make a divisional application on the basis of these claims.
1‧‧‧殼體 1‧‧‧Shell
2‧‧‧源殼體 2‧‧‧Source shell
3‧‧‧蒸發裝置 3‧‧‧Evaporation device
3'‧‧‧蒸發裝置 3'‧‧‧evaporator
3"‧‧‧蒸發裝置 3"‧‧‧evaporator
4‧‧‧第一氣體輸送管線 4‧‧‧The first gas transmission pipeline
5‧‧‧第一氣流 5‧‧‧First Air
6‧‧‧第一排氣通道 6‧‧‧First exhaust passage
7‧‧‧運送管線 7‧‧‧Transportation pipeline
8‧‧‧第二氣體輸送管線 8‧‧‧Second gas pipeline
9‧‧‧第二氣流 9‧‧‧Second Airflow
10‧‧‧第二排氣通道 10‧‧‧Second exhaust channel
11‧‧‧擴散障壁 11‧‧‧Diffusion barrier
12‧‧‧障壁元件 12‧‧‧Barrier element
17‧‧‧間隙空間 17‧‧‧Interstitial space
18‧‧‧罩蓋 18‧‧‧Cover
19‧‧‧端面 19‧‧‧End face
20‧‧‧階梯 20‧‧‧Stairs
Z‧‧‧中心線 Z‧‧‧Centerline
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102016100625.4A DE102016100625A1 (en) | 2016-01-15 | 2016-01-15 | Device for providing a process gas in a coating device |
DE102016100625.4 | 2016-01-15 |
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TW201734257A TW201734257A (en) | 2017-10-01 |
TWI706050B true TWI706050B (en) | 2020-10-01 |
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TW106100834A TWI706050B (en) | 2016-01-15 | 2017-01-11 | Device for supplying process gas in coating device |
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KR (1) | KR20180102168A (en) |
CN (1) | CN108699689B (en) |
DE (1) | DE102016100625A1 (en) |
TW (1) | TWI706050B (en) |
WO (1) | WO2017121704A1 (en) |
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DE102020110571A1 (en) * | 2020-04-17 | 2021-10-21 | Apeva Se | Powder dispenser for an aerosol generator |
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US20100206231A1 (en) * | 2007-09-04 | 2010-08-19 | Eugene Technology Co., Ltd. | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
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DE3640206A1 (en) | 1986-11-25 | 1988-06-01 | Basf Ag | METHANOL / AIR FUEL CELL BATTERIES WITH HIGH ENERGY AND PERFORMANCE DENSITY |
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US6391147B2 (en) * | 1994-04-28 | 2002-05-21 | Tokyo Electron Limited | Plasma treatment method and apparatus |
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JP2003218042A (en) * | 2002-01-25 | 2003-07-31 | Sony Corp | Method of supplying gas, method and device for preventing back diffusion of gas, operating valve with reverse gas diffusion preventing mechanism, vaporizer with reverse gas diffusion preventing mechanism, method and device for vaporizing and supplying liquid material, method of supplying gas for semiconductor manufacturing device, and semiconductor manufacturing apparatus |
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KR101709921B1 (en) | 2011-06-22 | 2017-02-24 | 아익스트론 에스이 | Vapor deposition material source and method for making same |
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2016
- 2016-01-15 DE DE102016100625.4A patent/DE102016100625A1/en active Pending
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- 2017-01-10 KR KR1020187023579A patent/KR20180102168A/en not_active Application Discontinuation
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CN1319682A (en) * | 2000-01-27 | 2001-10-31 | 硅谷集团热系统责任有限公司 | Free floating barrier and semiconductor technological system |
US20100206231A1 (en) * | 2007-09-04 | 2010-08-19 | Eugene Technology Co., Ltd. | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
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KR20180102168A (en) | 2018-09-14 |
CN108699689A (en) | 2018-10-23 |
DE102016100625A1 (en) | 2017-07-20 |
TW201734257A (en) | 2017-10-01 |
CN108699689B (en) | 2021-06-15 |
WO2017121704A1 (en) | 2017-07-20 |
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