TWI704172B - Base layer, polishing pad with base layer and polishing method - Google Patents

Abstract

A base layer, a polishing pad with a base layer and a polishing method are provided. The polishing pad includes a polishing layer and a base layer. The base layer is disposed below the polishing layer, and the test curve of the base layer includes first slope and second slope wherein the angle formed between the first slope and the second slope is from 80∘to 130∘while the base layer is under dynamic compression test with cycling amplitude of 0.03 mm.

Description

Base layer, polishing pad with base layer and polishing method

The present invention relates to a base layer, a polishing pad, and a polishing method, and more particularly to a base layer that has a relatively fast and stable compression characteristic, a polishing pad having the foregoing base layer, and a polishing method.

With the advancement of the industry, the planarization process is often adopted as a process for producing various components. In the planarization process, the polishing process is often used by the industry. The polishing process is to adsorb the polishing object to the polishing head of the polishing system, and apply a pressure to press it on the polishing pad, and allow the polishing object and the polishing pad to move relative to each other to gradually flatten the surface to achieve flattening the goal of. In addition, it is also possible to choose to supply a polishing liquid with a chemical mixture on the polishing pad during the polishing process. Under the combined action of mechanical and chemical effects, the surface of the polishing object can be flattened.

At present, most polishing pads used in semiconductor wafers have a double-layer structure. The polishing pad includes a polishing layer and a base layer. The base layer is adhered under the polishing layer and fixed on the polishing platform, and the base layer is mostly porous. The base layer usually has a larger compression rate than the polishing layer. During the polishing process, the surface of the polishing pad and the polishing object can be uniformly contacted to help improve the polishing performance. Therefore, how to provide the compression characteristics with faster and stable The base layer has become a very important research topic.

The invention provides a base layer, a polishing pad with the base layer, and a polishing method, so that the polishing pad has a relatively fast and stable compression characteristic and improves the polishing efficiency.

The substrate layer provided by the present invention is suitable for the polishing layer of the pad polishing pad, wherein the substrate layer is subjected to a dynamic compression test with a cyclic amplitude of 0.03 mm to obtain a test curve of vertical displacement versus compression times. The test curve includes a first slope and a first slope. Two slopes, and the angle formed by the first slope and the second slope is between 80 degrees and 130 degrees.

The substrate layer provided by the present invention is suitable for the polishing layer of the pad polishing pad, wherein the substrate layer is subjected to a dynamic compression test with a cyclic amplitude of 0.03 mm to obtain a test curve of vertical displacement versus compression times. The test curve includes a first slope and a first slope. Two slopes, and the compression times of the first slope and the second slope turning point are less than 4000 times.

The polishing pad provided by the present invention includes a polishing layer and a base layer. The base layer is located below the polishing layer, where the base layer is subjected to a dynamic compression test with a cyclic amplitude of 0.03 mm to test the vertical displacement versus compression times. The test curve includes a first slope and a second slope, and the first slope and the second slope The formed angle is between 80 degrees and 130 degrees.

The polishing pad provided by the present invention includes a polishing layer and a base layer. The base layer is located below the polishing layer, where the base layer is subjected to a dynamic compression test with a cyclic amplitude of 0.03 mm to test the vertical displacement versus compression times. The test curve includes a first slope and a second slope, and the first slope and the second slope The number of compressions at the turning point is less than 4000.

The polishing method provided by the present invention is used for polishing an object, including providing the above-mentioned polishing pad; applying pressure to the object to press it on the polishing pad; and providing relative movement to the object and the polishing pad.

Based on the above, the test curve of vertical displacement versus compression times obtained after the dynamic compression test of the substrate layer includes a first slope and a second slope, and the angle formed by the first slope and the second slope is between 80 degrees and 130 degrees. between. In addition, the number of times of compression at the turning point of the first slope and the second slope is less than 4000. Therefore, the base layer has a relatively fast and stable compression characteristic, which can improve the polishing performance of the polishing pad.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

The foregoing and other technical content, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, for example: up, down, left, right, front or back, etc., are only directions for referring to the attached drawings. Therefore, the directional terms used are used to illustrate but not to limit the present invention.

FIG. 1 is a schematic diagram of applying a polishing pad with a base layer according to an embodiment of the present invention to a polishing system. According to this embodiment, the polishing pad 100 includes a polishing layer 102 and a base layer 104, and the base layer 104 is disposed under the polishing layer 102.

In this embodiment, the polishing layer 102 is, for example, composed of a polymer substrate, where the polymer substrate can be polyester, polyether, polyurethane, polycarbonate, Polyacrylate (polyacrylate), polybutadiene (polybutadiene), or other polymer substrates synthesized by suitable thermosetting resin or thermoplastic resin. In addition to the polymer substrate, the polishing layer 102 may also include conductive materials, abrasive particles, micro-spheres, or soluble additives in the polymer substrate.

The base layer 104 is suitable for the polishing layer 102 in the backing polishing pad 100, and its main material is, for example, polyethylene, polypropylene, a copolymer of polyethylene and ethylene vinyl acetate, or a copolymer of polypropylene and ethylene vinyl acetate. Or any currently known material that can be used in the base layer of the polishing pad. In one embodiment, the base layer 104 may be polypropylene, high density polyethylene, or medium density polyethylene, for example. Among them, the base layer 104 includes a foaming agent added to it. The foaming agent can generate gas after pyrolysis to form a porous base layer 104. The gas generated can be nitrogen or carbon dioxide, which is not limited here. , It depends on the type of blowing agent used. When the blowing agent is Azodicarbonamide, the gas generated by pyrolysis is nitrogen; when the blowing agent is sodium hydrogen carbonate, for example, the gas generated by pyrolysis is carbon dioxide. The bridging agent is, for example, dicumyl peroxide. In addition, the base layer 104 may further include a foaming aid, a lubricant, or a filler, but the invention is not limited thereto.

In order to describe the embodiments of the present invention more clearly, please refer to FIG. 2 first. 2 is a test curve diagram of the vertical displacement versus the number of compressions obtained by performing a dynamic compression test on the base layer of an embodiment of the present invention. In this embodiment, the base layer is subjected to a dynamic compression test at a temperature of 50°C, a cycle amplitude of 0.03 mm, a frequency of 2 times per second, and a preload of 20 kg, for example. Since the base layer under the polishing layer in the polishing pad is elastic, the vertical displacement here refers to when the polishing pad is subjected to a downward pressure (for example, in FIG. 1 of the present invention, it means that the polishing pad 100 faces the polishing platform 120). The applied force), the middle value of the displacement of the polishing pad in the Z-axis direction (that is, the direction perpendicular to the polishing surface).

It can be seen from Fig. 2 that the test curve has a first slope m1 and a second slope m2. The included angle formed by the first slope m1 and the second slope m2 may be, for example, between 80 degrees and 130 degrees, preferably between 90 degrees and 120 degrees, but the invention is not limited thereto. In addition, the number of times of compression at the turning point of the first slope m1 and the second slope m2 is less than 4000. In other words, when the base layer is subjected to cyclic pressure, the compression times at which its compression characteristics become stable are less than 4000 times. For the non-woven fabric impregnated resin material or foam material commonly used in the traditional base layer, the angle formed by the first slope and the second slope is greater than 135 degrees, and the number of compressions at the turning point is greater than 4,500, which is the traditional substrate When the layer is subjected to cyclic pressure, the compression times of its compression characteristics become more than 4500 times, so the traditional base layer is slow to reach stable compression characteristics.

Next, please continue to refer to Figure 1. In this embodiment, the polishing pad 100 further includes a first adhesive layer 106 and a second adhesive layer 108. The first adhesive layer 106 is disposed between the polishing layer 102 and the base layer 104. The material of the first adhesive layer 106 is, for example, UV curing adhesive, hot melt adhesive, moisture curing adhesive, or pressure sensitive adhesive (Pressure Sensitive Adhesive, PSA). The second adhesive layer 108 is disposed at the bottom of the base layer 104. The second adhesive layer 108 can closely adhere to the base layer 104 and the polishing platform 120, so that the polishing pad 100 can maintain a good adhesion to the polishing platform 120 during the polishing process. Wherein, the second adhesive layer 108 is, for example, a double-sided adhesive layer (for example, a double-sided pressure sensitive adhesive).

In addition, according to the polishing method proposed in the present invention, the polishing pad disclosed in the present invention is applied to a polishing process for polishing an object, please refer to FIG. 3. First, proceed to step S301 to provide a polishing pad. The polishing pad includes a polishing layer and a base layer, and the base layer is disposed under the polishing layer. Then, step S302 is performed to apply pressure to the object to place it on the polishing pad to make the object contact the polishing pad. After that, step S303 is performed to provide relative movement to the object and the polishing pad to polish the object with the polishing pad to achieve the goal of planarization. For the related description of the polishing pad here, please refer to the foregoing embodiment, which will not be repeated here.

The polishing pads in the above embodiments can be applied to polishing equipment and processes used in the production of components such as semiconductors, integrated circuits, micro-electro-mechanics, energy conversion, communications, optics, storage discs, and displays, to produce these components The polishing object used may include semiconductor wafers, IIIV group wafers, storage device carriers, ceramic substrates, polymer substrates, and glass substrates, but it is not intended to limit the scope of the present invention.

In summary, according to the base layer, the polishing pad with the base layer, and the polishing method provided by the present invention, by providing the base layer with the characteristics of rapid recovery and stability on the polishing pad, the polishing pad is not easily deformed after being stressed. , So that the surface of the polishing pad is in uniform contact with the polishing object, and the polishing performance is improved.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100‧‧‧Grinding pad 102‧‧‧Grinding layer 104‧‧‧Base layer 106‧‧‧First adhesion layer 108‧‧‧Second adhesion layer 120‧‧‧Grinding platform m1‧‧‧First slope m2‧‧ ‧Second slope S301, S302, S303‧‧‧Step

FIG. 1 is a schematic diagram of applying a polishing pad with a base layer according to an embodiment of the present invention to a polishing system. 2 is a test curve diagram of the vertical displacement versus the number of compressions obtained by performing a dynamic compression test on the base layer of an embodiment of the present invention. Fig. 3 is a flowchart of a polishing method according to an embodiment of the present invention.

m1‧‧‧first slope

m2‧‧‧second slope

Claims (29)

A base layer, which is suitable for a polishing layer of a backing-grinding pad, is characterized in that: the base layer is subjected to a dynamic compression test with a cyclic amplitude of 0.03 mm to obtain a test curve of vertical displacement versus compression times. The test curve includes a first A slope and a second slope, and the angle formed by the first slope and the second slope is between 80 degrees and 130 degrees. The base layer according to the first item of the patent application, wherein the angle formed by the first slope and the second slope is between 90 degrees and 120 degrees. The base layer according to item 1 of the scope of patent application, wherein the number of times of compression of the turning point of the first slope and the second slope is less than 4000 times. The base layer according to the first item of the patent application, wherein the material of the base layer includes polyethylene, polypropylene, copolymer of polyethylene and ethylene vinyl acetate, or copolymer of polypropylene and ethylene vinyl acetate . The base layer according to item 1 of the scope of patent application, wherein the base layer is a porous material, and the porous material is made by adding one of the foaming agents to generate gas after pyrolysis. In the base layer described in item 5 of the scope of patent application, the gas generated is nitrogen or carbon dioxide. The substrate layer according to item 5 of the scope of patent application, wherein the foaming agent is azobisformamide or sodium bicarbonate. The base layer according to item 4 of the scope of patent application, wherein the base layer further includes a bridging agent, and the bridging agent is dicumyl peroxide. A base layer, which is suitable for a polishing layer of a backing-grinding pad, is characterized in that: the base layer is subjected to a dynamic compression test with a cyclic amplitude of 0.03 mm to obtain a test curve of vertical displacement versus compression times. The test curve includes a first A slope and a second slope, and the compression times of the turning point of the first slope and the second slope are less than 4000 times. The base layer described in item 9 of the scope of the patent application, wherein the material of the base layer includes polyethylene, polypropylene, a copolymer of polyethylene and ethylene vinyl acetate, or a copolymer of polypropylene and ethylene vinyl acetate . The base layer according to item 9 of the scope of patent application, wherein the base layer is a porous material, and the porous material is made by adding one of the foaming agents to generate gas after pyrolysis. The substrate layer described in item 11 of the scope of patent application, wherein the gas generated is nitrogen or carbon dioxide. The substrate layer described in item 11 of the scope of patent application, wherein the foaming agent is azobismethamide or sodium bicarbonate. The base layer according to item 10 of the scope of patent application, wherein the base layer further includes a bridging agent, wherein the bridging agent is dicumyl peroxide. A polishing pad includes: a polishing layer; and a base layer located below the polishing layer, wherein the base layer is subjected to a dynamic compression test with a cyclic amplitude of 0.03 mm, and a test curve of vertical displacement versus compression times is obtained. Including a first slope And a second slope, and the angle formed by the first slope and the second slope is between 80 degrees and 130 degrees. According to the polishing pad described in claim 15, wherein the angle formed by the first slope and the second slope is between 90 degrees and 120 degrees. According to the polishing pad described in item 15 of the scope of patent application, the number of times of compression of the turning point of the first slope and the second slope is less than 4000 times. The polishing pad described in item 15 of the scope of the patent application, wherein the material of the base layer includes polyethylene, polypropylene, a copolymer of polyethylene and ethylene vinyl acetate, or a copolymer of polypropylene and ethylene vinyl acetate . The polishing pad described in item 15 of the scope of patent application, wherein the base layer is a porous material, and the porous material is made by adding one of the foaming agents to generate gas after pyrolysis. The polishing pad described in item 19 of the scope of patent application, wherein the gas generated is nitrogen or carbon dioxide. The polishing pad described in item 19 of the scope of patent application, wherein the foaming agent is azobisformamide or sodium bicarbonate. According to the polishing pad described in item 18 of the patent application, the base layer further includes a bridging agent, and the bridging agent is dicumyl peroxide. A polishing pad, comprising: a polishing layer; and a base layer located below the polishing layer, wherein the base layer is obtained by a dynamic compression test with a cyclic amplitude of 0.03 mm A test curve of vertical displacement versus number of compressions, the test curve including a first slope and a second slope, and the number of compressions at the turning point of the first slope and the second slope is less than 4000 times. The polishing pad according to item 23 of the scope of patent application, wherein the material of the base layer includes polyethylene, polypropylene, a copolymer of polyethylene and ethylene vinyl acetate, or a copolymer of polypropylene and ethylene vinyl acetate . The polishing pad described in item 23 of the scope of patent application, wherein the base layer is a porous material, and the porous material is made by adding one of the foaming agents to generate gas after pyrolysis. In the polishing pad described in item 25 of the scope of patent application, the gas generated is nitrogen or carbon dioxide. The polishing pad described in item 25 of the scope of patent application, wherein the foaming agent is azobisformamide or sodium bicarbonate. According to the polishing pad described in claim 24, the base layer further includes a bridging agent, and the bridging agent is dicumyl peroxide. A polishing method for polishing an object, including: providing the polishing pad as described in any one of the 15th to 28th patent applications; applying a pressure to the object to press the polishing pad; and The object and the polishing pad provide a relative movement.

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