TWI702741B - Wafer level chip scale ultrasonic sensor module and manufacation method thereof - Google Patents

Abstract

A wafer level chip scale ultrasonic sensor module includes a substrate, a complex layer and a base layer. The substrate has a through groove that communicates with the upper surface of the substrate and the lower surface of the substrate. The complex layer is on the substrate. The complex layer includes an ultrasonic sensor member and a protective layer. The ultrasonic sensor is on upper surface of the substrate and the through groove exposes the lower surface of the substrate. The protective layer covers the upper surface of the ultrasonic sensor member and a portion of the substrate. The complex layer has a trench that communicates with the upper surface of the protective layer, the lower surface of the protective layer, and the through groove. The trench surrounds a part of the ultrasonic sensor member and the ultrasonic sensor member corresponds to the through groove. The base layer is located on the lower surface of the substrate and covers the through groove so that a space is formed between the through groove, the lower surface of the ultrasonic sensor member and the upper surface of the base layer. The space communicates with the groove.

Description

Wafer-level ultrasonic chip module with suspension structure and manufacturing method thereof

An ultrasonic transmission technology, especially a wafer-level ultrasonic chip module and its manufacturing method.

With the development of technology, smart electronic devices such as mobile phones, personal laptops or tablets have become essential tools in life. The public has become accustomed to storing important information or personal data in smart electronic devices. The functions or applications of electronic devices are also developing in a more personalized direction. In order to avoid the loss or misappropriation of important information, smart electronic devices are now widely used in fingerprint recognition to identify their users.

It has been seen that ultrasonic fingerprint recognition technology has been applied to smart electronic devices. Generally speaking, when using an ultrasonic module to integrate into a smart electronic device, the ultrasonic module sends an ultrasonic signal to the finger and receives the fingerprint by touching the upper cover of the ultrasonic module or the screen protection layer of the smart electronic device. The strength of the ultrasonic signal reflected from the peaks and valleys of the waves can identify fingerprints. However, the ultrasonic signal of the ultrasonic module can be transmitted to the area not in contact with the finger through the medium, so that the reflected ultrasonic signal received by the ultrasonic module is not necessarily reflected by the finger, so it is not easy to recognize the fingerprint.

An embodiment of the present invention provides a wafer-level ultrasonic wafer with a suspension structure The module includes a substrate, a composite layer, and a substrate. The substrate has a through groove, and the through groove communicates with the upper surface of the substrate and the lower surface of the substrate. The composite layer is located on the substrate. The composite layer includes an ultrasonic body and a protective layer. The ultrasonic body is located on the upper surface of the substrate and the through groove exposes the lower surface of the ultrasonic body. The protective layer covers the ultrasonic body and part of the upper surface of the substrate. The composite layer has a groove, which connects the upper surface of the protective layer, the lower surface of the protective layer, and the through groove, and the groove surrounds a part of the ultrasonic body and the ultrasonic body corresponds to the through groove. The substrate is located on the lower surface of the substrate and covers the through groove, so that a space is formed between the through groove, the lower surface of the ultrasonic body and an upper surface of the substrate, and the space communicates with the groove.

The present invention provides a method for manufacturing a wafer-level ultrasonic chip module, which includes forming an ultrasonic body on a substrate, forming a first protective material layer on the upper surface of the ultrasonic body and the upper surface of the substrate, and patterning the first protective material layer to form The first protective layer, the conductive material layer is formed on the upper surface of the first protective layer, the two circuit predetermined areas and the removal structure predetermined areas to form the circuit layer, the second electrode circuit and the removal structure, and the second protective layer is formed on the circuit layer , On the two electrode lines and the removal structure, from the upper surface of the second protection layer corresponding to the removal structure to remove part of the second protection layer, remove the structure and part of the substrate, from the lower surface of the substrate to the upper surface of the substrate A part of the substrate corresponding to the ultrasonic body is removed to expose the lower surface of the ultrasonic body and form a substrate on the lower surface of the substrate. In this embodiment, the ultrasonic body includes a first piezoelectric layer, a first electrode, a second piezoelectric layer, and a second electrode stacked in sequence on a substrate, wherein the second piezoelectric layer and the second electrode are not covered Part of the upper surface of the first electrode. The first protective layer has two predetermined areas for the circuit and a predetermined area for the removal structure, wherein the two predetermined areas for the circuit respectively expose part of the upper surface of the first electrode and part of the upper surface of the second electrode, and the predetermined area of the removal structure surrounds the ultrasonic body Part of and exposes part of the upper surface of the substrate.

In summary, an embodiment of the present invention provides a wafer-level ultrasonic chip module and a manufacturing method thereof, which form a groove around a part of the ultrasonic body and form a space under the ultrasonic body, and the space is connected to the groove To form an overall gap. Accordingly, through the design of the overall gap, the transmission speeds of the ultrasonic signal transmitted toward the upper surface of the ultrasonic body and the ultrasonic signal transmitted toward the substrate are different, so as to distinguish the ultrasonic signals from different directions. By filtering out the ultrasonic signal transmitted in the direction of the substrate, the fingerprint of the finger on the protective layer can be recognized by receiving the ultrasonic signal transmitted in the direction of the upper surface of the ultrasonic body, and the fingerprint pattern can be recognized by avoiding receiving the second ultrasonic signal. , Thereby improving the accuracy of fingerprint recognition. Another embodiment of the present invention is that the opening of the protective layer is provided with a conductive material. Since the ultrasonic signal can be better transmitted to the finger through the conductive material, the ultrasonic signal in different directions can be distinguished. Therefore, the fingerprint recognition can be improved. Accuracy.

100, 200, 200': Wafer-level ultrasonic chip module

110: substrate

120: composite layer

121: Ultrasonic Body

122: protective layer

123: Line layer

124: Electrode line

1211: first piezoelectric layer

1211': The first piezoelectric material layer

1212: first electrode

1212': first electrode material layer

1213: second piezoelectric layer

1213': second piezoelectric material layer

1214: second electrode

1214': second electrode material layer

1221: the first protective layer

1222: second protective layer

125: Remove structure

130: Substrate

140: Conductor layer

150: pad

160: conductive material

170: Another ultrasonic component

A, B: viscose material

C: circuit wiring

D: Carrier board

H1: Through groove

H2: groove

H21: Upper groove

H22: Middle groove

H23: Lower groove

H3: Space

H4: opening

V1: Route reservation area

V2: Remove structure predetermined area

110a, 122a, 121a, 123a, 130a, 1212a, 1214a, 1221a, 1222a: upper surface

110b, 121b, 122b, 130b: bottom surface

110c, 123c: side surface

FIG. 1 is a schematic structural diagram of a wafer-level ultrasonic chip module according to an embodiment of the invention.

2A is a schematic structural diagram of a wafer-level ultrasonic chip module according to another embodiment of the invention.

2B is a schematic structural diagram of a wafer-level ultrasonic chip module according to another embodiment of the present invention.

3A to 3N are schematic diagrams respectively formed in each step of a method for manufacturing a wafer-level ultrasonic chip module according to an embodiment of the present invention.

4A to 4C are respectively schematic diagrams formed in each step of a method for manufacturing a wafer-level ultrasonic chip module according to another embodiment of the present invention.

FIG. 5 is a schematic top view of a wafer-level ultrasonic chip module according to an embodiment of the invention.

FIG. 1 is a schematic structural diagram of a wafer-level ultrasonic chip module according to an embodiment of the invention. Please refer to FIG. 1, the wafer-level ultrasonic chip module 100 includes a substrate 110, a composite layer 120 and a substrate 130. The composite layer 120 is located on the upper surface 110 a of the substrate 110, and the substrate 130 is bonded to the lower surface 110 b of the substrate 110.

The substrate 110 has a through groove H1, and the through groove H1 penetrates from the upper surface 111a to the lower surface 111b of the substrate 110. The substrate 110 is used to carry the composite layer 120. In one embodiment, the substrate 110 may be a silicon substrate, a glass substrate, a sapphire substrate, a plastic substrate, or the like.

The composite layer 120 is disposed on the substrate 110. The composite layer 120 includes an ultrasonic body 121 and a protective layer 122. The ultrasonic body 121 is located on the upper surface 110a of the substrate 110, and at least a part of the lower surface 121b of the ultrasonic body 121 is exposed by the through groove H1. The protective layer 122 covers the ultrasonic body 121 and part of the upper surface 110 a of the substrate 110. The composite layer 120 has a groove H2. The groove H2 penetrates from the upper surface 122a of the composite layer 120 to the lower surface 122b of the composite layer 120, and the groove H2 communicates with the through groove H1. The ultrasonic body 121 corresponds to the through groove H1, and the groove H2 surrounds a part of the ultrasonic body 121, and the other part (the part not surrounded by the groove H2) around the ultrasonic body 121 is connected to the protective layer 122. Here, the groove H2 can prevent the ultrasonic signal of the ultrasonic body 121 from interfering with the signal of other electronic components (not shown). The ultrasonic body 121 corresponds to the through groove H1. In other words, the ultrasonic body 121 is located on the through groove H1 and is suspended and connected to the protective layer 122. The projection of the ultrasonic body 121 in the vertical projection direction of the substrate 110 overlaps the projection of the through groove H1. In one embodiment, the material of the protective layer 122 is, for example, but not limited to silicon dioxide (PE-SiO ₂ ).

The substrate 130 is located on the lower surface 110b of the substrate 110 and covers the through groove H1, so that the through groove H1, the lower surface 121b of the ultrasonic body 121 and the upper surface 130a of the substrate 130 are formed Space H3, and space H3 communicates with groove H2. In one embodiment, the substrate 130 may be disposed on the lower surface 110b of the substrate 110 through the adhesive material A. In one embodiment, the adhesive material A may be double-sided tape, adhesive ink, or adhesive coating. Here, the ultrasonic body 121 is suspended in the space H3, so that the ultrasonic body 121 easily vibrates. In other words, the projection of the ultrasonic body 121 in the vertical projection direction of the substrate 130 overlaps with the projection of the space H3, and the lower surface 121b of the ultrasonic body 121 is not in contact with the upper surface 130a of the substrate 130.

Accordingly, the first ultrasonic signal transmitted from the ultrasonic body 121 toward the upper surface 121a of the ultrasonic body 121 is generally transmitted through the solid medium (protective layer 122); and the ultrasonic signal transmitted from the ultrasonic body 121 toward the direction of the substrate 130 The second ultrasonic signal is generally transmitted through a gas medium and/or a solid medium (space H3 and/or substrate 130, etc.). In other words, the transmission of the first ultrasonic signal is through the same type of medium (solid medium), while the transmission of the second ultrasonic signal must be through different types of medium (gas medium and solid medium). Accordingly, the speed of the first ultrasonic signal returned after being reflected by the finger is different from the speed of the second ultrasonic signal returned after the air passing through the space H3 is reflected by the substrate 130. Here, the design of the overall gap can make the transmission speed of the first ultrasonic signal and the second ultrasonic signal different, and then identify and filter out the second ultrasonic signal and receive only the first ultrasonic signal. Therefore, the fingerprint of the finger on the upper surface of the protective layer 122 can be recognized through the first ultrasonic signal, and the interference of the second ultrasonic signal can be avoided, thereby improving the accuracy of fingerprint recognition. In addition, since the groove H2 surrounds a part of the periphery of the ultrasonic body 121, the groove H2 can prevent the ultrasonic signal of the ultrasonic body 121 from interfering with the signals of other electronic components, thereby better improving the accuracy of fingerprint recognition.

In another embodiment, as shown in FIG. 2A, the protective layer 122 has an opening H4, The opening H4 extends from the upper surface 122a of the protective layer 122 to the upper surface 121a of the ultrasonic body 121, and exposes a part of the upper surface 121a of the ultrasonic body 121. The wafer-level ultrasonic chip module 200 further includes a conductive material 160 located in the opening H4 and contacting the upper surface 121 a of the ultrasonic body 121. In one embodiment, the conductive material 160 may be polydimethylsiloxane (PDMS). The ultrasonic signal can be better transmitted to the finger through the conductive material 160. Accordingly, the first ultrasonic signal transmitted from the ultrasonic body 121 toward the upper surface 121a of the ultrasonic body 121 is generally transmitted through the solid medium (the protective layer 122 and the conductive material 160, etc.); and the ultrasonic body 121 emits toward the bottom The second ultrasonic signal transmitted in the direction of the material 130 is generally transmitted through a gas medium and/or a solid medium (substrate 130, space H3, etc.). In other words, the transmission of the first ultrasonic signal is through the same type of medium (solid medium), while the transmission of the second ultrasonic signal must be through different types of medium (gas medium and solid medium). Since the ultrasonic signal can be better transmitted to the finger through the conductive material 160, the second ultrasonic signal can be more distinguished and filtered and only the first ultrasonic signal can be received. Therefore, the accuracy of fingerprint recognition can be improved.

In a modified embodiment, as shown in FIG. 2B, the wafer-level ultrasonic chip module 200' may further include an upper cover 270, which may cover the conductive material 160 of the wafer-level ultrasonic chip module 200' and Cover trench H2. However, in another modified embodiment, the wafer-level ultrasonic chip module 100 may further include an upper cover, and the upper cover may cover the groove H2 (not shown) of the wafer-level ultrasonic chip module 100.

In one embodiment, as shown in FIGS. 1, 2A and 2B, the ultrasonic body 121 includes a first piezoelectric layer 1211, a first electrode 1212, a second piezoelectric layer 1213, and a second electrode 1214. The first piezoelectric layer 1211 is located on the substrate 110, and the first electrode 1212 is located on the first piezoelectric layer 1211, The second piezoelectric layer 1213 is located on the first electrode 1212, and the second electrode 1214 is located on the second piezoelectric layer 1213. Wherein, the second piezoelectric layer 1213 and the second electrode 1214 do not cover part of the upper surface 1212a of the first electrode 1212. In other words, part of the upper surface 1212 a of the first electrode 1212 is exposed to the second piezoelectric layer 1213 and the second electrode 1214. In one embodiment, the materials of the first piezoelectric layer 1211 and the second piezoelectric layer 1213 are, for example, but not limited to, aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), etc. material. In one embodiment, the materials of the first electrode 1212 and the second electrode 1214 are, for example, but not limited to, conductive materials such as aluminum (Al), tungsten (W), molybdenum (Mo), platinum (Pt), gold (Au), etc. .

In one embodiment, as shown in FIGS. 1, 2A, and 2B, the composite layer 120 further includes a circuit layer 123 and a two-electrode circuit 124. The protective layer 122 covers the circuit layer 123 and exposes the side surface of the circuit layer 123 (as shown in FIG. 1), where the circuit layer 123 can be electrically connected to an external circuit. The two electrode lines 124 are respectively located on part of the upper surface 1212 a of the first electrode 1212 and part of the upper surface 1214 a of the second electrode 1214, and the two electrode lines 124 are covered by the protective layer 122. In one embodiment, the two-electrode circuit 124 can be electrically connected to at least part of the circuit layer 123 according to the overall electrical connection requirements. Here, the circuit layer 123 can connect the electrical signals of the two-electrode circuit 124 and the ultrasonic body 121 Pass to the outside world. In one embodiment, the circuit layer may be a circuit electrically connected between the ultrasonic body 121 and/or other electronic components, such as circuit wiring, conductive pads, and the like. In another embodiment, the circuit layer 123 may be other electronic components. In one embodiment, the material of the circuit layer 123 and the two-electrode circuit 124 may be aluminum copper (AlCu).

In one embodiment, as shown in FIGS. 1, 2A, and 2B, the wafer-level ultrasonic chip module 100 includes a conductor layer 140 and at least one pad 150. The conductor layer 140 is located on the side surface 123 c of the circuit layer 123. In one embodiment, the conductive layer 140 may be further located on the side of the circuit layer 123 The surface 123c extends to the lower surface 130b of the substrate 130, and the conductor layer 140 is electrically connected to the side surface 123c of the circuit layer 123 exposed to the protective layer 122. The pad 150 is located on the conductive layer 140. Here, the circuit layer 123 can be electrically connected to the pad 150 through the conductor layer 140, so that the components (such as the ultrasonic body 121 and/or other electronic components) can be electrically connected to external circuits. In one embodiment, the pad 150 may be a solder ball or a bump.

3A to 3N are schematic diagrams respectively formed in each step of a method for manufacturing a wafer-level ultrasonic chip module according to an embodiment of the present invention. Please refer to Figure 3A to Figure 3N in order.

First, as shown in FIGS. 3A and 3B, an ultrasonic body 121 is formed on the upper surface 110 a of the substrate 110, wherein the ultrasonic body 121 includes a first electrode 1212 and a second electrode 1214 that is not connected to the first electrode 1212. In detail, as shown in FIG. 3A, the piezoelectric layer can be sequentially deposited on the substrate 110 through methods such as evaporation, chemical vapor deposition (CVD), or sputtering. Material to form a first piezoelectric material layer 1211', deposit a first electrode material to form a first electrode material layer 1212', deposit a piezoelectric material to form a second piezoelectric material layer 1213', deposit a second electrode material to form a first Two electrode material layer 1214'. Then, as shown in FIG. 3B, part of the second electrode material layer 1214' and the second piezoelectric material layer 1213' can be removed through wet etching and dry etching processes to form the second electrode 1214 and the second piezoelectric layer 1213. Part of the first electrode material layer 1212 ′ and the first piezoelectric material layer 1211 ′ can be removed through wet etching and dry etching processes to form the first electrode 1212 and the first piezoelectric layer 1211. Wherein, the second piezoelectric layer 1213 and the second electrode 1214 expose part of the upper surface 1212a of the first electrode 1212. Here, the ultrasonic body 121 includes a first piezoelectric layer 1211, a first electrode 1212, a second piezoelectric layer 1213, and a second electrode 1214 that are sequentially stacked on the substrate 110. Wherein, the second piezoelectric layer 1213 and the second electrode 1214 do not cover part of the upper surface of the first electrode 1212 1212a.

Next, a whole first protective material layer (not shown) is formed on the upper surface 121a of the ultrasonic body 121 and the upper surface 110a of the substrate 110 through methods such as spraying or sputtering. Then, as shown in FIG. 3C, the first protective material layer is patterned through a dry etching process to form the first protective layer 1221. Wherein, the first protection layer 1221 has two circuit predetermined regions V1 and a removal structure predetermined region V2. The two circuit predetermined regions V1 respectively correspond to and expose part of the upper surface 1212a of the first electrode 1212 and part of the upper surface 1214a of the second electrode 1214. The removal structure predetermined area V2 surrounds a part of the ultrasonic body 121 and exposes a part of the upper surface 110a of the substrate 110. In one embodiment, the material of the first protection layer 1221 is, for example, but not limited to, silicon dioxide (PE-SiO ₂ ).

As shown in FIG. 3D, a conductive material layer is formed on the upper surface 1221a of the first protection layer 1221, and the second circuit predetermined area V1 is removed on the substrate 110 by evaporation, chemical vapor deposition, or sputtering. The predetermined region V2 is structured to form the circuit layer 123, the two-electrode circuit 124 and the removal structure 125. In an implementation aspect of this step, the circuit layer 123, the second electrode circuit 124, and the removal structure 125 can be formed by depositing conductive materials and performing an etching process (for example, wet etching). In one embodiment, the material of the circuit layer 123, the two-electrode circuit 124, and the removal structure 125 may be aluminum copper (AlCu).

As shown in FIG. 3E, a second protective layer 1222 is formed on the circuit layer 123, the second electrode circuit 124 and the removal structure 125 by spraying or sputtering. In one embodiment, the material of the second protection layer 1222 may be the same as the material of the first protection layer to form the protection layer 122. In one embodiment, the material of the second protection layer 1222 is, for example, but not limited to, silicon dioxide (PE-SiO ₂ ).

As shown in FIG. 3F, the lower surface 110b of the substrate 110 is polished to thin the thickness of the substrate 110. This step is optional.

Next, a part of the second protection layer 1222, the removal structure 125 and a part of the substrate 110 are removed from the upper surface 1222a of the second protection layer 1222 corresponding to the removal structure 125 (that is, the upper surface 122a of the protection layer 122). For the following detailed description, please refer to Figure 3G to Figure 3I.

As shown in FIG. 3G, a portion of the second protective layer 1222 is removed by dry etching on the upper surface 1222a of the second protective layer 1222 corresponding to the removal structure 125 (that is, the upper surface 122a of the protective layer 122) to form an upper portion Groove H21. The upper trench H21 extends from the upper surface 1222 a of the second protection layer 1222 to the top of the removal structure 125, and the upper trench H21 exposes the removal structure 125.

As shown in FIG. 3H, the removal structure 125 is removed from the upper trench H21 by wet etching to form the middle trench H22. Wherein, the middle trench H22 communicates with the upper trench H21 and extends to the upper surface 110a of the substrate 110 and exposes the upper surface 110a of the substrate 110.

As shown in FIG. 3I, a portion of the substrate 110 removed from the middle trench H22 is dry-etched to form a lower trench H23 connected to the middle trench H22. Among them, the lower trench H23 does not penetrate the substrate 110.

As shown in FIG. 3J, a portion of the substrate 110 corresponding to the ultrasonic body 121 is removed from the lower surface 110b of the substrate 110 to the upper surface 110a of the substrate 110 by grinding or dry etching to expose the lower surface 121b of the ultrasonic body 121 to form Through groove H1. In detail, since the formation of the lower trench H23 can make the thickness of the substrate 110 corresponding to the lower trench H23 thinner (as shown in FIG. 3J), therefore, in this step, the lower surface 110b of the substrate 110 When part of the substrate 110 corresponding to the ultrasonic body 121 is removed from the upper surface 110a of the substrate 110, the portion corresponding to the lower groove H23 Part of the substrate 110 is first etched to form openings on the lower surface 110b of the substrate 110. Here, the opening may be used as a reference for removing a part of the substrate 110 corresponding to the ultrasonic body 121 from the lower surface 110 b of the substrate 110 and continue to perform grinding or etching until the lower surface 121 b of the ultrasonic body 121 is exposed.

As shown in FIG. 3K, a substrate 130 is formed on the lower surface 110b of the substrate 110, so that a space H3 is formed between the lower surface 121b of the ultrasonic body 121 and the upper surface 130a of the substrate 130. In one embodiment, the substrate 130 can be adhered to the lower surface 110b of the substrate 110 through the adhesive material A. In one embodiment, the adhesive material A may be double-sided tape, adhesive ink, or adhesive coating.

As shown in FIG. 3L, the circuit layer 123 and the substrate 110 are cut to expose the side surface 123c of the circuit layer 123 and the side surface 110c of the substrate 110.

As shown in FIG. 3M, the conductor layer 140 is formed on the side surface 123c of the circuit layer 123 by means of sputtering, spraying or coating. In one embodiment, the conductive layer 140 may be formed on the side surface 123c of the circuit layer 123 to the lower surface 130b of the substrate 130. The conductor layer 140 is electrically connected to the side surface 123 c of the circuit layer 123 exposed to the protective layer 122.

As shown in FIG. 3N, a pad 150 is formed on the conductive layer 140. Here, the circuit layer 123 can be electrically connected to the pad 150 through the conductor layer 140, so that the components (such as the ultrasonic body 121 and/or other electronic components) can be electrically connected to external circuits. In one embodiment, the pad 150 can be a solder ball or a bump, and can be formed by a solder ball placement process such as electroplating or printing.

4A to 4C are respectively schematic diagrams formed in each step of a method for manufacturing a wafer-level ultrasonic chip module according to another embodiment of the present invention. Please refer to FIGS. 4A to 4C in order. The following will only introduce the differences between this embodiment and the previous embodiment, and the same steps are And features are not repeated here.

The step of FIG. 4A is performed following the step of FIG. 3I. As shown in FIG. 4A, a portion is removed from the upper surface 1222a (that is, the upper surface 122a of the protective layer 122) of the second protective layer 1222 corresponding to the removal structure 125 After removing the structure 125 and part of the substrate 110, that is, after forming the lower trench H23, removing part of the second protection layer 1222 to expose part of the upper surface 121a of the ultrasonic body 121, To form an opening H4. Wherein, the opening H4 extends from the upper surface 122a of the protective layer 122 to the upper surface 121a of the ultrasonic body 121, and exposes a part of the upper surface 121a of the ultrasonic body 121. In one embodiment, as shown in FIG. 4A, a part of the second protective layer 1222 may be further removed to expose a part of the upper surface 123a of the circuit layer 123.

As shown in FIG. 4B, a carrier board D is covered to shield the upper surface 1222a of the second protection layer 1222, the trench H2, and the opening H4. Here, the carrier D is used as a cover for protecting the opening H4. In addition, the carrier D can also be used as a carrier substrate to facilitate subsequent steps. In one embodiment, the carrier D may be disposed on the upper surface 1222a, the groove H2, and the opening H4 of the second protection layer 1222 through the adhesive material B.

Next, proceed to the steps shown in Figure 3J to Figure 3N. Since these steps are roughly the same as the foregoing, the difference is roughly that the second protective layer 1222 of this embodiment has opened the opening H4, so it will not be repeated here.

Next, the step of FIG. 4C is performed following the step of FIG. 3N. As shown in FIG. 4C, after the step of forming the substrate 130 on the lower surface 110b of the substrate 110 to form the space H3, here is the step of forming the pad 150 in The step on the conductor layer 140 is to remove the carrier D, exposing the upper surface 1222a of the second protection layer 1222, the trench H2 and the opening H4.

Please refer to FIG. 2B again, and a conductive material 160 is filled in the opening H4. Here, the conductive material 160 is located in the opening H4 and contacts the upper surface 121 a of the ultrasonic body 121.

In one embodiment, the ultrasonic body 121 can use the ultrasonic signal as a carrier to transmit the sound information to be transmitted. Among them, the ultrasonic signal can send out a sound notification for a specific area of the space.

In one embodiment, the ultrasonic signal generated by the ultrasonic body 121 is reflected by the peaks and valleys of the fingerprint of the finger, and the lines of the fingerprint can be identified through the reflected ultrasonic signal. In addition, it can also be used to sense the ultrasonic signal reflected by the palm to realize gesture recognition.

In one embodiment, the wafer-level ultrasonic chip module 100 can be used as a distance sensor, a height sensor, or a direction sensor. The ultrasonic signal generated by the ultrasonic body 121 is reflected by the object and can be used to measure the distance between a person and the wafer-level ultrasonic chip module 100. Here, the ultrasonic body 121 can sense the distance or the moving direction of an object or human body close to the wafer-level ultrasonic chip module 100 to generate a distance signal or a direction signal. Here, the ultrasonic body 121 can generate a distance signal or a direction signal. It is a direction signal and generates an ultrasonic signal for a specific object or human body.

In one embodiment, the wafer-level ultrasonic chip module 100 can be used as a pressure sensor, such as but not limited to a water pressure sensor, an air pressure sensor, and an oil pressure sensor.

In one embodiment, the wafer-level ultrasonic chip module 100 can be used as a flow meter. The ultrasonic signal generated by the ultrasonic body 121 is propagated at a specific angle with the flow direction of a fluid. The flow rate is measured by the change in the propagation time of the ultrasonic signal. When the propagation speed of the ultrasonic signal becomes slow, it means that the direction of the ultrasonic signal passing through the fluid is opposite to the flow direction of the fluid. When the ultrasonic signal propagation speed becomes faster, it represents the direction of the ultrasonic signal passing through the fluid and the fluid The flow is the same.

FIG. 5 is a schematic top view of a wafer-level ultrasonic chip module according to an embodiment of the invention. Please refer to FIG. 5, the wafer-level ultrasonic chip module 100 or 200 may further include another ultrasonic element 170. The ultrasonic body 121 is surrounded by the trench H2, passes through the protective layer 122 and/or the circuit wiring C, and is connected to the protective layer 122 not passed through by the trench H2, so that it can be suspended in the space H3. The ultrasonic element 160 is not surrounded by the groove H2 and is not suspended above the space H3. Here, in one embodiment, the wafer-level ultrasonic chip module 100 or 200 can be used as an acceleration sensor. When the wafer-level ultrasonic chip module 100 or 200 is attached to the measured object and the measured object has not moved or rotated, the ultrasonic body 121 and the ultrasonic element 160 both emit ultrasonic signals respectively. When the object to be measured moves or rotates, since the ultrasonic body 121 is suspended above the space H3, the ultrasonic body 121 may deviate from its original position due to shaking due to force. Here, the ultrasonic body 121 and the ultrasonic element 160 are respectively received at different times of the reflected ultrasonic signal, so that the acceleration of the measured object can be obtained.

In another embodiment, the wafer-level ultrasonic chip module 100 or 200 can be used as a level. The wafer-level ultrasonic chip module may further include an upper cover, wherein the upper cover may cover the groove H2 (not shown in the figure) of the wafer-level ultrasonic chip module 100, or it may cover the wafer-level ultrasonic wafer mold Group of conductive materials 160 (such as the wafer-level ultrasonic chip module 200' of FIG. 2B). By attaching the wafer-level ultrasonic chip module 100 or 200 to the measured object, when the measured object is horizontally inclined, the distance between the ultrasonic body 121 and the ultrasonic element 160 to the ultrasonic signal reflected by the upper cover is different. This can tell whether the measured object has a horizontal tilt.

In summary, an embodiment of the present invention provides a wafer-level ultrasonic chip module and The manufacturing method includes forming a groove on a part of the periphery of the ultrasonic body and forming a space under the ultrasonic body, and the space is connected with the groove to form an overall gap. Accordingly, through the design of the overall gap, the transmission speeds of the ultrasonic signal transmitted toward the upper surface of the ultrasonic body and the ultrasonic signal transmitted toward the substrate are different, so as to distinguish the ultrasonic signals from different directions. By filtering out the ultrasonic signal transmitted in the direction of the substrate, the fingerprint of the finger on the protective layer can be recognized by receiving the ultrasonic signal transmitted in the direction of the upper surface of the ultrasonic body, and the fingerprint pattern can be recognized by avoiding receiving the second ultrasonic signal. , Thereby improving the accuracy of fingerprint recognition. Another embodiment of the present invention is that the opening of the protective layer is provided with a conductive material. Since the ultrasonic signal can be better transmitted to the finger through the conductive material, the ultrasonic signal in different directions can be distinguished. Therefore, the fingerprint recognition can be improved. Accuracy.

Although the technical content of the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Anyone who is familiar with this technique and makes some changes and modifications without departing from the spirit of the present invention should be covered by the present invention Therefore, the scope of protection of the present invention shall be subject to the scope of the attached patent application.

100: Wafer-level ultrasonic chip module

110: substrate

120: composite layer

121: Ultrasonic Body

122: protective layer

123: Line layer

124: Electrode line

1211: first piezoelectric layer

1212: first electrode

1213: second piezoelectric layer

1214: second electrode

130: Substrate

140: Conductor layer

150: pad

A: Viscose material

H1: Through groove

H2: groove

H3: Space

110a, 122a, 121a, 130a, 1212a, 1214a: upper surface

110b, 121b, 122b, 130b: bottom surface

123c: side surface

Claims (12)

A wafer-level ultrasonic chip module with a suspension structure includes: a substrate with a through groove that penetrates from the upper surface of the substrate to the lower surface of the substrate; a composite layer on the substrate, the The composite layer includes an ultrasonic body and a protective layer. The ultrasonic body is located on the upper surface of the substrate and the through groove exposes the lower surface of the ultrasonic body. The protective layer covers the ultrasonic body and part of the upper surface of the substrate. The composite layer has a groove that penetrates from the upper surface of the composite layer to the lower surface of the composite layer, and the groove communicates with the through groove, the groove surrounds a part of the ultrasonic body and the ultrasonic body Corresponding to the through groove, the ultrasonic body includes a first piezoelectric layer, a first electrode, a second piezoelectric layer, and a second electrode, the first piezoelectric layer is located on the substrate, and the first electrode Located on the first piezoelectric layer, the second piezoelectric layer is located on the first electrode, the second electrode is located on the second piezoelectric layer, and the second piezoelectric layer and the second electrode are not covered Part of the upper surface of the first electrode; and a substrate located on the lower surface of the substrate and covering the through groove, so that a gap is formed between the through groove, the lower surface of the ultrasonic body, and an upper surface of the substrate Space, the space communicates with the groove. The wafer-level ultrasonic chip module with a suspension structure according to claim 1, wherein the composite layer further includes a circuit layer and two electrode circuits, and the protective layer covers the circuit layer and exposes the side surface of the circuit layer , The protective layer covers the two electrode lines and the two electrode lines are respectively located on part of the upper surface of the first electrode and part of the upper surface of the second electrode, and the two electrode lines are electrically connected to the first electrode and the The second electrode. Wafer-level ultrasonic wafer mold with suspension structure as described in claim 2 The set further includes a conductive layer and at least one pad. The conductive layer is located from the side surface of the circuit layer to the lower surface of the substrate, and the at least one pad is located on the conductive layer. The wafer-level ultrasonic chip module with a suspension structure according to claim 1, wherein the ultrasonic body is located in the space and suspended connected to the protective layer, and the projection of the ultrasonic body in the vertical projection direction of the substrate is consistent with The projections of this space overlap. The wafer-level ultrasonic chip module with a suspension structure according to claim 1, wherein the protective layer has an opening that exposes part of the upper surface of the ultrasonic body, and the wafer-level ultrasonic chip module further includes A conductive material is located in the opening and contacts the upper surface of the ultrasonic body. A method for manufacturing a wafer-level ultrasonic chip module with a suspension structure includes: forming an ultrasonic body on a substrate, wherein the ultrasonic body includes a first piezoelectric layer and a first piezoelectric layer sequentially stacked on the substrate. Electrode, a second piezoelectric layer and a second electrode, wherein the second piezoelectric layer and the second electrode do not cover part of the upper surface of the first electrode; a first protective material layer is formed on the ultrasonic body The upper surface and the upper surface of the substrate; the first protective material layer is patterned to form a first protective layer, wherein the first protective layer has two circuit predetermined areas and a removal structure predetermined region, wherein the two circuit predetermined areas A part of the upper surface of the first electrode and a part of the upper surface of the second electrode are respectively exposed. The predetermined area of the removal structure surrounds a part of the ultrasonic body and exposes part of the upper surface of the substrate; a conductive material layer is formed on The upper surface of the first protective layer, the two circuit predetermined regions and the removal structure predetermined region to form a circuit layer, two electrode circuits and a removal structure; forming a second protective layer on the circuit layer and the two electrodes Above the line and the removal structure; A part of the second protective layer, the removed structure, and a part of the substrate are removed from the upper surface of the second protective layer corresponding to the removal structure; the ultrasonic wave is removed from the lower surface of the substrate to the upper surface of the substrate A part of the body of the substrate exposes the lower surface of the ultrasonic body; and a substrate is formed on the lower surface of the substrate so that a space is formed between the lower surface of the ultrasonic body and an upper surface of the substrate. The method for manufacturing a wafer-level ultrasonic wafer module with a suspension structure according to claim 6, wherein the step of forming the ultrasonic body on the substrate includes: sequentially forming the first piezoelectric material layer on the substrate, The first electrode material layer, the second piezoelectric material layer, and the second electrode material layer; and part of the first piezoelectric material layer, the first electrode material layer, the second piezoelectric material layer, and the The second electrode material layer to form a first piezoelectric layer, a first electrode, a second piezoelectric layer and a second electrode, wherein the second piezoelectric layer and the second electrode expose the first Part of the upper surface of the electrode. The method for manufacturing a wafer-level ultrasonic chip module with a suspension structure according to claim 6, further comprising: after forming a second protective layer on the upper surface of the conductive material layer, grinding the lower surface of the substrate to be thin Change the thickness of the substrate. The method for manufacturing a wafer-level ultrasonic chip module with a suspension structure according to claim 6, wherein a portion of the second protection layer and the removal are removed from the upper surface of the second protection layer corresponding to the removal structure The steps of the structure and part of the substrate include: removing part of the second protection from the upper surface of the second protection layer corresponding to the removal structure Layer to form an upper trench, wherein the upper trench exposes the removal structure; the removal structure is removed from the upper trench to form a middle trench, wherein the middle trench communicates with the upper trench and Exposing the upper surface of the substrate; and removing part of the substrate by the middle groove to form a lower groove communicating with the middle groove. The method for manufacturing a wafer-level ultrasonic chip module with a suspension structure according to claim 6, further comprising: cutting the circuit layer and the substrate to expose the side surface of the circuit layer and the side surface of the substrate; forming A conductor layer is formed on the side surface of the circuit layer to the lower surface of the substrate; and at least one pad is formed on the conductor layer, wherein the conductor layer is electrically connected to the circuit layer and the pad. The method for manufacturing a wafer-level ultrasonic chip module with a suspension structure according to claim 6, further comprising: removing a portion of the second protection layer from the upper surface of the second protection layer corresponding to the removal structure, After removing the structure and part of the substrate, remove part of the second protective layer to expose part of the upper surface of the ultrasonic body to form an opening; and cover a carrier plate to cover the upper surface of the second protective layer The surface, the groove and the opening. The method for manufacturing a wafer-level ultrasonic chip module with a suspension structure according to claim 11, further comprising: removing the carrier after the step of forming a substrate on the lower surface of the substrate to form the space; as well as Fill the opening with a conductive material.

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