TWI697747B - Control method and testing method for micro-electro-mechanical systems device - Google Patents
Control method and testing method for micro-electro-mechanical systems device Download PDFInfo
- Publication number
- TWI697747B TWI697747B TW108101511A TW108101511A TWI697747B TW I697747 B TWI697747 B TW I697747B TW 108101511 A TW108101511 A TW 108101511A TW 108101511 A TW108101511 A TW 108101511A TW I697747 B TWI697747 B TW I697747B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- state
- signal
- time interval
- mems device
- Prior art date
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
Description
本揭露是有關於一種微機電系統裝置,特別是有關於一種微機電系統裝置之控制方法及測試方法。This disclosure relates to a micro-electro-mechanical system device, in particular to a control method and a test method of the micro-electro-mechanical system device.
對於許多現代應用而言,涉及半導體裝置的電子設備是很重要的。材料與設計的技術進展已經產生數代半導體裝置,每一代都比前一代具有更小且更複雜的電路。在進步與創新的過程中,通常會增加功能性設計(亦即每一晶片面積上的互連裝置之數目)而降低幾何尺寸(亦即使用製造製程可產生的最小元件)。此進展已增加處理與製造半導體裝置的複雜度。近來,已發展微機電系統(micro-electro mechanical system,MEMS)裝置,並且亦通常與電子設備有關。MEMS裝置係微尺寸裝置,通常為小於1微米至數毫米的範圍。MEMS裝置包含使用半導體材料的製造以形成機械與電性特徵。MEMS裝置可包含一些元件(例如靜態或可動元件),用於達到電機功能性。MEMS裝置廣泛使用於各種應用中。MEMS應用包含運動感測器、壓力感測器、印刷噴嘴、或類似物。其他的MEMD應用包含慣性感測器,例如用於量測線性加速度的加速度計,以及用於量測角速度的陀螺儀(gyroscope)。再者,MEMS應用延伸至光學應用,例如可動的反射鏡,以及無線射頻(radio frequency,RF)應用,例如RF開關或類似物。For many modern applications, electronic equipment involving semiconductor devices is very important. Technological advances in materials and design have produced generations of semiconductor devices, each with smaller and more complex circuits than the previous generation. In the process of progress and innovation, it is common to increase the functional design (that is, the number of interconnected devices per chip area) and reduce the geometric size (that is, the smallest component that can be produced using a manufacturing process). This progress has increased the complexity of processing and manufacturing semiconductor devices. Recently, micro-electro mechanical system (MEMS) devices have been developed, and they are also generally related to electronic equipment. MEMS devices are micro-sized devices, usually in the range of less than 1 micron to several millimeters. MEMS devices include manufacturing using semiconductor materials to form mechanical and electrical features. The MEMS device may include some elements (such as static or movable elements) to achieve motor functionality. MEMS devices are widely used in various applications. MEMS applications include motion sensors, pressure sensors, printing nozzles, or the like. Other MEMD applications include inertial sensors, such as accelerometers for measuring linear acceleration, and gyroscopes for measuring angular velocity. Furthermore, MEMS applications extend to optical applications, such as movable mirrors, and radio frequency (RF) applications, such as RF switches or the like.
本揭露的一實施例係關於一種微機電系統裝置的控制方法,該微機電系統裝置包含一第一電極及一第二電極,該方法包括:提供一開啟訊號,其中該開啟訊號具有一上升區段及一下降區段;施加該上升區段至該微機電系統裝置,使該第一電極移動以與該第二電極形成一開啟狀態;施加該下降區段至該微機電系統裝置,該第一電極與該第二電極維持在該開啟狀態;提供一關閉訊號;施加該關閉訊號至該微機電系統裝置,使該第一電極與該第二電極由該開啟狀態變為一關閉狀態。An embodiment of the present disclosure relates to a control method of a micro-electro-mechanical system device, the micro-electro-mechanical system device includes a first electrode and a second electrode, the method includes: providing a turn-on signal, wherein the turn-on signal has a rising area Section and a descending section; applying the ascending section to the MEMS device, so that the first electrode moves to form an open state with the second electrode; applying the descending section to the MEMS device, the first An electrode and the second electrode are maintained in the open state; an off signal is provided; the off signal is applied to the microelectromechanical system device, so that the first electrode and the second electrode change from the open state to an off state.
本揭露的另一實施例係關於一種微機電系統裝置的控制方法,該微機電系統裝置包含一第一電極及一第二電極,該方法包括:在一第一時間間隔,施加一正電流,使該第一電極移動以與該第二電極形成一開啟狀態;在一第二時間間隔,施加一負電流,使該第一電極與該第二電極維持在該開啟狀態;在一第三時間間隔,施加一關閉訊號,使該第一電極與該第二電極由該開啟狀態變為一關閉狀態。Another embodiment of the present disclosure relates to a method for controlling a MEMS device. The MEMS device includes a first electrode and a second electrode. The method includes: applying a positive current at a first time interval, Move the first electrode to form an open state with the second electrode; apply a negative current at a second time interval to maintain the first electrode and the second electrode in the open state; a third time At intervals, an off signal is applied to make the first electrode and the second electrode change from the open state to a closed state.
本揭露的另一實施例係關於一種微機電系統裝置的測試方法,該方法包括:提供該微機電系統裝置,其包含一第一電極及一第二電極;在一第一時間間隔,施加一正電流至該微機電系統裝置,使該第一電極移動以與該第二電極形成一開啟狀態;在一第二時間間隔,施加一負電流至該微機電系統裝置,使該第一電極與該第二電極維持在該開啟狀態;在一第三時間間隔,施加一關閉訊號至該微機電系統裝置,使該第一電極與該第二電極由該開啟狀態變為一關閉狀態。Another embodiment of the present disclosure relates to a method for testing a MEMS device. The method includes: providing the MEMS device, which includes a first electrode and a second electrode; and applying a A positive current is applied to the MEMS device to move the first electrode to form an open state with the second electrode; a negative current is applied to the MEMS device at a second time interval to make the first electrode and The second electrode is maintained in the open state; in a third time interval, an off signal is applied to the MEMS device, so that the first electrode and the second electrode change from the open state to an off state.
以下揭露提供用於實施所提供標的物之不同特徵之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露。此等僅為實例且不意欲為限制性的。例如,在下文描述中,一第一構件形成於一第二構件上方或上可包含其中第一構件及第二構件形成為直接接觸之實施例,且亦可包含其中額外構件可形成於第一構件與第二構件之間使得第一構件及第二構件可能未直接接觸之實施例。另外,本揭露可在各種實例中重複元件符號及/或字母。此重複係為簡單及清楚之目的,且本身不指定所論述之各種實施例及/或組態之間之一關係。The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and configurations are described below to simplify the disclosure. These are only examples and are not intended to be limiting. For example, in the following description, a first member formed on or on a second member may include an embodiment in which the first member and the second member are formed in direct contact, and may also include an additional member formed on the first member. An embodiment in which the first member and the second member may not be in direct contact between the member and the second member. In addition, the present disclosure may repeat element symbols and/or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself specify one of the relationships between the various embodiments and/or configurations discussed.
下文詳細論述本揭露之實施例。然而,應暸解,本揭露提供可在各種各樣的特定背景內容中體現之許多適用發明概念。所論述之特定實施例僅為闡釋性的,且不限制本揭露之範疇。The embodiments of the present disclosure are discussed in detail below. However, it should be understood that this disclosure provides many applicable inventive concepts that can be embodied in a variety of specific background content. The specific embodiments discussed are only illustrative and do not limit the scope of this disclosure.
此外,為便於描述,可在本文中使用空間相對術語(諸如「底下」、「下方」、「下」、「上方」、「上」、「下」、「左」、「右」及類似者)來描述一個元件或構件與另一(些)元件或構件之關係,如圖中所繪示。除圖中所描繪之定向之外,空間相對術語亦意欲涵蓋裝置在使用或操作中之不同定向。裝置可以其他方式定向(旋轉90度或成其他定向),且因此可同樣解釋本文中使用之空間相對描述符。將暸解,當一元件被稱作「連接至」或「耦合至」另一元件時,其可直接連接或耦合至另一元件,或可存在中介元件。In addition, for ease of description, spatially relative terms (such as "bottom", "below", "down", "above", "up", "down", "left", "right" and the like can be used in this text ) To describe the relationship between one element or component and another element or component(s), as shown in the figure. In addition to the orientations depicted in the figures, spatially relative terms are also intended to cover different orientations of the device in use or operation. The device can be oriented in other ways (rotated by 90 degrees or in other orientations), and therefore the spatial relative descriptors used in this article can also be interpreted. It will be understood that when an element is referred to as being “connected to” or “coupled to” another element, it can be directly connected or coupled to the other element, or intervening elements may be present.
由於微機電系統(micro-electro mechanical system,MEMS)裝置廣泛用於各種應用中,通常需要一個MEMS裝置的結構可容納超過一種形式的MEMS功能。例如,單一MEMS架構可包含加速度計與陀螺儀。關於此等MEMS裝置,最終產物經製造成為複合晶片,並且以縮小的晶粒尺寸執行功能。Since micro-electro mechanical system (MEMS) devices are widely used in various applications, it is usually necessary for a MEMS device structure to accommodate more than one form of MEMS function. For example, a single MEMS architecture can include an accelerometer and a gyroscope. Regarding these MEMS devices, the final product is manufactured into a composite wafer and performs functions with reduced grain size.
另一方面,在MEMS裝置中所觀察到之一種可靠度問題是黏附(stiction)或由於表面力之接觸表面的黏著。一般來說,黏附是需要被克服之靜摩擦力,為了使彼此接觸之靜止物體能夠進行相動運動。例如於MEMS裝置之中,當有面積位於公釐範圍以下之兩表面接近時,該兩表面會黏在一起,因而限制了MEMS裝置之可靠度。以此尺寸而言,MEMS裝置之主要失效原因是靜電的或由電荷引起的黏附。On the other hand, one of the reliability problems observed in MEMS devices is stiction or adhesion of contact surfaces due to surface forces. Generally speaking, adhesion is the static friction that needs to be overcome in order to enable the stationary objects in contact with each other to move together. For example, in a MEMS device, when two surfaces with an area below the millimeter range are close, the two surfaces will stick together, which limits the reliability of the MEMS device. In terms of this size, the main cause of failure of MEMS devices is electrostatic or adhesion caused by charges.
本揭露提供一種MEMS裝置控制方法與測試方法可減輕上述問題。圖1及圖2係根據一些實施例之MEMS裝置100之示意圖。MEMS裝置100包含一第一電極102及一第二電極104。在一些實施例中,MEMS裝置100還可以包含一第一基板101、一第二基板103及一介電層105。第一電極102與第一基板101連接,第二電極104與第二基板103連接,介電層105設置在第二電極104之上。需注意的是,為求清楚說明,圖1僅簡單表示MEMS裝置100的一部分結構,例如第一基板101僅顯示與第一電極102連接的部分,圖示之結構並非用以限制本揭露。The present disclosure provides a MEMS device control method and test method that can alleviate the above-mentioned problems. 1 and 2 are schematic diagrams of a
第一基板101及/或第二基板103包含半導體材料,例如矽。在一些實施例中,第一基板101及/或第二基板103可包含其他半導體材料,例如矽鍺、碳化矽、砷化鎵、或類似物。在一些實施例中,第一基板101及/或第二基板103為p型半導體基板(受體型)或n型半導體基板(供應者型)。或者,第一基板101及/或第二基板103包含另一元素半導體,例如鍺;化合物半導體,包含碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦、與/或銻化銦;合金半導體,包含SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP與/或GaInAsP;或其組合。又或者,第一基板101及/或第二基板103為絕緣體上覆半導體。在一些實施例中,第一基板101的材料可與第二基板103的材料相同。The
在一些實施例中,第一基板101可以接合至第二基板103。在某些實施例中,第一基板101是MEMS基板,而第二基板103是承載晶圓。相接合之第一基板101與第二基板103包含一可移動之MEMS區域,其係第一基板101與第二基板103之一區域,此區域上形成MEMS結構之可移動的特徵或部分,第一電極102與第二電極104的結構。In some embodiments, the
第一電極102為可動電極(movable electrode)。在一些實施例中,第一電極102可由導體或半導體材料形成,第一電極102可包含多晶矽。在一些實施例中,第一電極102具導電性與電容性。在一些實施例中,第一電極102為可動的或可振動的元件。在另一些實施例中,第一電極102為可動膜(movable membrane)或隔膜(diaphragm)。在一些實施例中,第一電極102形成於第一基板101中。例如:可使用電漿蝕刻製程來蝕刻第一基板101,以形成第一電極102。The
第二電極104可由導體形成。或者,第二電極104可由半導體材料形成。在一些實施例中,第二電極104可包含金屬,例如金、銀、鋁、鈦、銅、鎢、鎳、鈦、鉻、以及其合金、氧化物、或氮化物。The
在某些實施例中,第一電極102相對於第二電極104的位移會造成第一電極102與第二電極104之間的電容變化。在一些實施例中,第一電極102經配置以捕捉其與第一基板101之間的凹槽中之氣體移動造成的阻抗變化。而後,電容或阻抗變化由連接第一電極102或第二電極104的電路譯為電子信號。在一些實施例中,產生的電子信號被傳送至另一裝置、另一基板、或另一電路,用於進一步處理。In some embodiments, the displacement of the
介電層105含有矽,或其氧化物。或者,介電層105含有氮化矽。在一些實施例中,介電層105包括介電材料,例如可為氧化物(例如Ge氧化物)、氮氧化物(例如GaP氮氧化物)、二氧化矽(SiO
2)、承氮氧化物(nitrogen-bearing oxide)(例如承氮SiO2)、摻氮氧化物(例如植入N
2的SiO
2)、矽氮氧化物(Si
xO
yN
z)、以及類似物。
The
在某些實施例中,響應控制訊號,可移動之第一電極102會與第二電極104彼此接近(如圖2所示),第一電極102再回復至其原始的結構(如圖1所示)。在一些實施例中,在第一電極102與第二電極104彼此接近之後,第一電極102可能附接至介電層105,並且靜止一段期間。In some embodiments, in response to the control signal, the movable
在一些現有的控制方法中,於第一電極102的靜止期間,由於控制訊號為定電壓的訊號,會使得電荷由第一電極102注入介電層105,進而引起黏附的問題。為了解決上述問題,在本揭露的一些實施例中,提供一種MEMS裝置的控制方法。In some existing control methods, during the static period of the
圖3係根據一些實施例之MEMS裝置的控制訊號序列200之示意圖。控制訊號序列200具有開啟訊號300及關閉訊號400。在某些實施例中,開啟訊號300具有上升區段302及下降區段304。上升區段302及下降區段304例如是交替地產生,且上升區段302及下降區段304的數量並非限制性。FIG. 3 is a schematic diagram of a
在一些實施例中,上升區段302例如為正電流,在第一時間間隔T1,施加上升區段302至MEMS裝置100會使第一電極102移動以與第二電極104形成開啟狀態(如圖2所示)。於此,開啟狀態係指第一電極102與第二電極104彼此接近至第一位置以形成電性連接。在一些實施例中,可移動的第一電極102會附接至介電層105,並與第二電極104接近形成電性連接。由於第一電極102與第二電極104電性連接,因此第一電極102與第二電極104形成開啟狀態。In some embodiments, the rising
在一些實施例中,下降區段304例如為負電流,在第二時間間隔T2,施加下降區段304至MEMS裝置100。由於第一電極102與第二電極104之間的靜電作用力是與電壓的平方成正比,在固定電阻的情況下,電壓亦會與電流成正比,因此第一電極102與第二電極104之間的靜電作用力亦會與電流的平方成正比。換言之,即使下降區段304為負電流,第一電極102與第二電極104仍會彼此接近形成電性連接。因此,第一電極102仍會附接於介電層105,並與第二電極104形成電性連接,維持開啟狀態。In some embodiments, the falling
值得一提的是,上升區段302及下降區段304的數量並非限制性,例如於本實施例中,以三個上升區段302及三個下降區段304做說明,但其非限制性。其中,正電流(上升區段302)與負電流(下降區段304)可以是依序地產生。換言之,正電流之後產生負電流,負電流之後產生正電流。It is worth mentioning that the number of ascending
因此,藉由在開啟訊號300中調變改變電流的正負流向,可以避免如固定電壓的訊號會促使電荷由第一電極102注入介電層105,進而產生黏附的問題。Therefore, by adjusting the positive and negative flow direction of the current in the turn-on
在一些實施例中,在開啟訊號300之後,可以提供關閉訊號400。在第三時間間隔T3,關閉訊號400施加至MEMS裝置100,使第一電極102與第二電極104由開啟狀態變為關閉狀態(如圖1所示)。於此,關閉狀態係指第一電極102與第二電極104彼此遠離至第二位置以形成電性不連接。在一些實施例中,可移動的第一電極102會遠離介電層105,並與第二電極104形成電性不連接。換言之,第一電極102會回復至其原始的平直結構。In some embodiments, after the turn-on
承上所述,藉由在開啟訊號300中調變電流的正負流向,例如使用交流電訊號,可以減少電荷由第一電極102注入介電層105,進而減少黏附的問題。再者,開啟訊號300中上升區段302與下降區段304的時間間隔(例如,第一時間間隔T1或第二時間間隔T2)皆小於第一電極102回復至原始狀態所需時間間隔(例如,第三時間間隔T3),因此開啟訊號300中的調變並不會使第一電極102與第二電極104由開啟狀態變為關閉狀態。也就是說,開啟訊號300中調變的電性延遲(electrical delay)係小於第一電極102改變狀態的機械性延遲(mechanical delay),因此開啟訊號300中的調變不會對MEMS裝置的控制產生影響,且可減輕第一電極102與第二電極104黏附的問題。As mentioned above, by modulating the positive and negative flow direction of the current in the turn-on
圖4及圖5係根據另一些實施例之MEMS裝置400之示意圖。MEMS裝置400包含第一電極402及第二電極404。MEMS裝置400與圖1、圖2之MEMS裝置100的差異在於:MEMS裝置400包含第一基板401及第二基板403,但不包含介電層。第一電極402與第二電極404之間例如為間隙405。關於第一電極402、第二電極404、第一基板401及第二基板403的組成已於圖1、圖2中詳述,於此不再贅述。4 and 5 are schematic diagrams of a
如上所述,響應控制訊號,可移動之第一電極402會與第二電極404彼此接近至第一位置(如圖5所示),第一電極402再回復至其原始的結構(如圖4所示)。在一些實施例中,在第一電極402與第二電極404彼此接近之後,第一電極402與第二電極404之間仍具有間隙405,第一電極402可能會靜止一段期間。As described above, in response to the control signal, the movable
在一些現有的控制方法中,於第一電極402的靜止期間,由於控制訊號為固定電壓的訊號,會使得電荷游離產生靜電作用力,進而引起黏附的問題。因此,本揭露如圖3所述的實施例同樣可解決上述問題。In some existing control methods, during the static period of the
同上於圖3所述,藉由在開啟訊號300中調變改變電流的正負流向,可以避免如固定電壓的訊號會促使電荷由第一電極402游離,進而產生黏附的問題。As described above in FIG. 3, by modulating the positive and negative flow direction of the current in the turn-on
承上所述,藉由在開啟訊號300中調變電流的正負流向,例如使用交流電訊號,可以減少電荷由第一電極402游離產生靜電作用力,進而減少黏附的問題。再者,開啟訊號300中上升區段302與下降區段304的時間間隔(例如,第一時間間隔T1或第二時間間隔T2)皆小於第一電極402回復至原始狀態所需時間間隔(例如,第三時間間隔T3),因此開啟訊號300中的調變並不會使第一電極402與第二電極404由開啟狀態變為關閉狀態。換言之,開啟訊號300中調變的電性延遲係小於第一電極402改變狀態的機械性延遲,因此開啟訊號300中的調變不會對MEMS裝置的控制產生影響,且可減輕第一電極402與第二電極404黏附的問題。As mentioned above, by modulating the positive and negative flow direction of the current in the turn-on
圖6係繪示根據本揭露之一些實施例之MEMS裝置的控制方法600之一流程圖。如圖6中所示,控制方法600具有操作602、操作604、操作606及操作610。操作602係提供一開啟訊號,其中開啟訊號具有一上升區段及一下降區段。操作604係施加上升區段至微機電系統裝置,使第一電極移動以與第二電極形成一開啟狀態。操作606係施加下降區段至微機電系統裝置,第一電極與第二電極維持在開啟狀態。操作608係提供一關閉訊號。操作610係施加關閉訊號至微機電系統裝置,使第一電極與第二電極由開啟狀態變為一關閉狀態。由於MEMS裝置的控制方法600已於圖1、圖2、圖3、圖4及圖5中詳述,於此不再贅述。需注意的是,本實施例可於方法600之前、期間和之後增加額外之操作。FIG. 6 shows a flowchart of a
圖7係繪示根據本揭露之另一些實施例之MEMS裝置的控制方法700之一流程圖。如圖7中所示,控制方法700具有操作702、操作704及操作706。操作702係在一第一時間間隔,施加一正電流,使第一電極移動以與第二電極形成一開啟狀態。操作704係在一第二時間間隔,施加一負電流,使第一電極與第二電極維持在開啟狀態。操作706係在一第三時間間隔,施加一關閉訊號,使第一電極與第二電極由開啟狀態變為一關閉狀態。由於MEMS裝置的控制方法700已於圖1、圖2、圖3、圖4及圖5中詳述,於此不再贅述。需注意的是,本實施例可於方法700之前、期間和之後增加額外之操作。FIG. 7 shows a flowchart of a
圖8係繪示根據本揭露之一些實施例之MEMS裝置的測試方法800之一流程圖。如圖8中所示,測試方法800具有操作802、操作804、操作806及操作810。操作802係提供微機電系統裝置,其包含一第一電極及一第二電極。操作804係係在一第一時間間隔,施加一正電流,使第一電極移動以與第二電極形成一開啟狀態。操作806係在一第二時間間隔,施加一負電流,使第一電極與第二電極維持在開啟狀態。操作808係在一第三時間間隔,施加一關閉訊號,使第一電極與第二電極由開啟狀態變為一關閉狀態。MEMS裝置的測試方法800可以藉由類似於上述控制方法600、700的方式,對MEMS裝置進行測試,以判斷第一電極及第二電極是否有黏附的問題。由於控制方法600、700已於圖1、圖2、圖3、圖4及圖5中詳述,於此不再贅述。需注意的是,本實施例可於方法800之前、期間和之後增加額外之操作。FIG. 8 is a flowchart of a
綜上所述,藉由在開啟訊號中調變電流的正負流向,例如使用交流電訊號,可以減少電荷由第一電極注入介電層或者由第一電極游離產生靜電作用力,進而減少黏附的問題。再者,開啟訊號中上升區段與下降區段的時間間隔(例如,第一時間間隔或第二時間間隔)皆小於第一電極回復至原始狀態所需時間間隔(例如,第三時間間隔),因此開啟訊號中的調變並不會使第一電極與第二電極由開啟狀態變為關閉狀態。換言之,開啟訊號中調變的電性延遲係小於第一電極改變狀態的機械性延遲,因此開啟訊號中的調變不會對MEMS裝置的控制產生影響,且可減輕第一電極與第二電極黏附的問題。再者,於測試階段亦可先行判斷第一電極及第二電極是否有黏附的問題。In summary, by modulating the positive and negative current flow in the turn-on signal, such as using an AC signal, the charge injected from the first electrode into the dielectric layer or the electrostatic force generated by the first electrode can be reduced, thereby reducing adhesion problems . Furthermore, the time interval between the rising section and the falling section in the turn-on signal (for example, the first time interval or the second time interval) is less than the time interval required for the first electrode to return to the original state (for example, the third time interval) Therefore, the modulation in the turn-on signal does not cause the first electrode and the second electrode to change from the on state to the off state. In other words, the electrical delay of the modulation in the turn-on signal is less than the mechanical delay of the first electrode changing state, so the modulation in the turn-on signal will not affect the control of the MEMS device, and can reduce the first electrode and the second electrode The problem of adhesion. Furthermore, during the testing phase, it is also possible to determine whether the first electrode and the second electrode have adhesion problems.
在一些實施例中,提供一種微機電系統裝置的控制方法。微機電系統裝置包含一第一電極及一第二電極,控制方法包括以下操作。提供一開啟訊號,其中開啟訊號具有一上升區段及一下降區段。施加上升區段至微機電系統裝置,使第一電極移動以與第二電極形成一開啟狀態。施加下降區段至微機電系統裝置,第一電極與第二電極維持在開啟狀態。提供一關閉訊號。施加關閉訊號至微機電系統裝置,使第一電極與第二電極由開啟狀態變為一關閉狀態。In some embodiments, a method for controlling a MEMS device is provided. The MEMS device includes a first electrode and a second electrode, and the control method includes the following operations. An opening signal is provided, wherein the opening signal has a rising section and a falling section. Applying the rising section to the MEMS device to move the first electrode to form an open state with the second electrode. The descending section is applied to the MEMS device, and the first electrode and the second electrode are maintained in an on state. Provide a close signal. The off signal is applied to the micro-electromechanical system device to make the first electrode and the second electrode change from an open state to a closed state.
在另一些實施例中,提供一種微機電系統裝置的控制方法。微機電系統裝置包含一第一電極及一第二電極,控制方法包括以下操作。在一第一時間間隔,施加一正電流,使第一電極移動以與第二電極形成一開啟狀態。在一第二時間間隔,施加一負電流,使第一電極與第二電極維持在開啟狀態。在一第三時間間隔,施加一關閉訊號,使第一電極與第二電極由開啟狀態變為一關閉狀態。In some other embodiments, a method for controlling a MEMS device is provided. The MEMS device includes a first electrode and a second electrode, and the control method includes the following operations. In a first time interval, a positive current is applied to move the first electrode to form an open state with the second electrode. In a second time interval, a negative current is applied to maintain the first electrode and the second electrode in an on state. In a third time interval, an off signal is applied to make the first electrode and the second electrode change from an on state to an off state.
在另一些實施例中,提供一種微機電系統裝置的測試方法。測試方法包括以下操作。提供微機電系統裝置,其包含一第一電極及一第二電極。在一第一時間間隔,施加一正電流至微機電系統裝置,使第一電極移動以與第二電極形成一開啟狀態。在一第二時間間隔,施加一負電流至微機電系統裝置,使第一電極與第二電極維持在開啟狀態。在一第三時間間隔,施加一關閉訊號至微機電系統裝置,使第一電極與第二電極由開啟狀態變為一關閉狀態。In some other embodiments, a method for testing a MEMS device is provided. The test method includes the following operations. A MEMS device is provided, which includes a first electrode and a second electrode. In a first time interval, a positive current is applied to the MEMS device to move the first electrode to form an open state with the second electrode. During a second time interval, a negative current is applied to the MEMS device to maintain the first electrode and the second electrode in an on state. In a third time interval, an off signal is applied to the MEMS device, so that the first electrode and the second electrode change from an on state to an off state.
上文概括數個實施例之特徵,使得熟習此項技術者可更佳理解本揭露之態樣。熟習此項技術者應暸解,其等可容易使用本揭露作為設計或修改其他程序及結構之一基礎以實行本文中介紹之實施例之相同目的及/或達成相同優點。熟習此項技術者亦應認識到,此等等效構造不脫離本揭露之精神及範疇,且其等可在本文中作出各種改變、替換及更改而不脫離本揭露之精神及範疇。The features of several embodiments are summarized above, so that those familiar with the art can better understand the aspect of the disclosure. Those familiar with the technology should understand that they can easily use the present disclosure as a basis for designing or modifying other programs and structures to perform the same purpose and/or achieve the same advantages of the embodiments described herein. Those familiar with the technology should also realize that these equivalent structures do not depart from the spirit and scope of this disclosure, and various changes, substitutions and alterations can be made in this article without departing from the spirit and scope of this disclosure.
100、400:MEMS裝置100, 400: MEMS device
101、401:第一基板101, 401: first substrate
102、402:第一電極102, 402: first electrode
103、403:第二基板103, 403: second substrate
104、404:第二電極104, 404: second electrode
105:介電層105: Dielectric layer
200:控制訊號序列200: Control signal sequence
300:開啟訊號300: Turn on the signal
302:上升區段302: Ascending section
304:下降區段304: descending section
400:關閉訊號400: Turn off the signal
T1:第一時間間隔T1: the first time interval
T2:第二時間間隔T2: second time interval
T3:第三時間間隔T3: third time interval
600、700:控制方法600, 700: control method
602、604、606、608、610、702、704、706、802、804、806、808:操作602, 604, 606, 608, 610, 702, 704, 706, 802, 804, 806, 808: Operation
800:測試方法800: test method
在結合附圖閱讀時,自以下[實施方式]最佳理解本揭露之態樣。應注意,根據產業中之標準實踐,各種構件未按比例繪製。事實上,為清楚論述,各個構件之尺寸可任意增大或減小。 圖1及圖2係根據一些實施例之MEMS裝置之示意圖。 圖3係根據一些實施例之MEMS裝置的控制訊號序列之示意圖。 圖4及圖5係根據另一些實施例之MEMS裝置之示意圖。 圖6係繪示根據本揭露之一些實施例之MEMS裝置的控制方法之一流程圖。 圖7係繪示根據本揭露之另一些實施例之MEMS裝置的控制方法之一流程圖。 圖8係繪示根據本揭露之一些實施例之MEMS裝置的測試方法之一流程圖。 When reading in conjunction with the drawings, the aspect of this disclosure is best understood from the following [Embodiments]. It should be noted that according to standard practice in the industry, various components are not drawn to scale. In fact, for clear discussion, the size of each component can be increased or decreased arbitrarily. 1 and 2 are schematic diagrams of MEMS devices according to some embodiments. FIG. 3 is a schematic diagram of a control signal sequence of a MEMS device according to some embodiments. 4 and 5 are schematic diagrams of MEMS devices according to other embodiments. FIG. 6 is a flowchart showing a control method of a MEMS device according to some embodiments of the disclosure. FIG. 7 shows a flowchart of a control method of a MEMS device according to other embodiments of the disclosure. FIG. 8 shows a flowchart of a testing method of a MEMS device according to some embodiments of the disclosure.
600:控制方法 600: control method
602、604、606、608、610:操作 602, 604, 606, 608, 610: Operation
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108101511A TWI697747B (en) | 2019-01-15 | 2019-01-15 | Control method and testing method for micro-electro-mechanical systems device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108101511A TWI697747B (en) | 2019-01-15 | 2019-01-15 | Control method and testing method for micro-electro-mechanical systems device |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI697747B true TWI697747B (en) | 2020-07-01 |
TW202028896A TW202028896A (en) | 2020-08-01 |
Family
ID=72601966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108101511A TWI697747B (en) | 2019-01-15 | 2019-01-15 | Control method and testing method for micro-electro-mechanical systems device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI697747B (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1500063A (en) * | 2001-04-02 | 2004-05-26 | 艾利森电话股份有限公司 | Micro electromechanical switches |
WO2011148698A1 (en) * | 2010-05-28 | 2011-12-01 | 太陽誘電株式会社 | Mems switch |
US20130234263A1 (en) * | 2011-11-11 | 2013-09-12 | Tamio Ikehashi | Mems element |
CN103369441A (en) * | 2012-04-04 | 2013-10-23 | 英飞凌科技股份有限公司 | MEMS device, MEMS structure and method of making MEMS device |
TW201425205A (en) * | 2012-12-20 | 2014-07-01 | Ind Tech Res Inst | MEMS device with multiple electrodes and fabricating method thereof |
US20150212109A1 (en) * | 2014-01-29 | 2015-07-30 | Samsung Electro-Mechanics Co., Ltd. | Mems sensor |
JP2015174154A (en) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | Mems device and manufacturing method thereof |
TWI516135B (en) * | 2013-08-29 | 2016-01-01 | 鑫創科技股份有限公司 | Micro electro-mechanical system microphone device with multi-sensitivity outputs and circuit thereof |
US20180273372A1 (en) * | 2017-03-24 | 2018-09-27 | Cirrus Logic International Semiconductor Ltd. | Mems devices and processes |
-
2019
- 2019-01-15 TW TW108101511A patent/TWI697747B/en active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1500063A (en) * | 2001-04-02 | 2004-05-26 | 艾利森电话股份有限公司 | Micro electromechanical switches |
WO2011148698A1 (en) * | 2010-05-28 | 2011-12-01 | 太陽誘電株式会社 | Mems switch |
US20130234263A1 (en) * | 2011-11-11 | 2013-09-12 | Tamio Ikehashi | Mems element |
CN103369441A (en) * | 2012-04-04 | 2013-10-23 | 英飞凌科技股份有限公司 | MEMS device, MEMS structure and method of making MEMS device |
TW201425205A (en) * | 2012-12-20 | 2014-07-01 | Ind Tech Res Inst | MEMS device with multiple electrodes and fabricating method thereof |
TWI516135B (en) * | 2013-08-29 | 2016-01-01 | 鑫創科技股份有限公司 | Micro electro-mechanical system microphone device with multi-sensitivity outputs and circuit thereof |
US20150212109A1 (en) * | 2014-01-29 | 2015-07-30 | Samsung Electro-Mechanics Co., Ltd. | Mems sensor |
JP2015174154A (en) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | Mems device and manufacturing method thereof |
US20180273372A1 (en) * | 2017-03-24 | 2018-09-27 | Cirrus Logic International Semiconductor Ltd. | Mems devices and processes |
Also Published As
Publication number | Publication date |
---|---|
TW202028896A (en) | 2020-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8030690B2 (en) | Device sensitive to a movement comprising at least one transistor | |
CN107337175B (en) | Semiconductor structure and manufacturing method thereof | |
US10745273B2 (en) | Method of manufacturing a switch | |
US8338207B2 (en) | Bulk silicon moving member with dimple | |
US20190062153A1 (en) | Fence structure to prevent stiction in a mems motion sensor | |
JP5193639B2 (en) | Micromachine device and method of manufacturing micromachine device | |
US10266395B2 (en) | Semiconductive structure and manufacturing method thereof | |
EP1829074A2 (en) | Liquid metal switch employing micro-electromechanical system (mems) structures for actuation | |
US9776852B2 (en) | Method for controlling surface roughness in MEMS structure | |
US7999201B2 (en) | MEMS G-switch device | |
KR20190003284A (en) | Method of stiction prevention by patterned anti-stiction layer | |
TWI697747B (en) | Control method and testing method for micro-electro-mechanical systems device | |
TW201623137A (en) | MEMS chip | |
US8570122B1 (en) | Thermally compensating dieletric anchors for microstructure devices | |
CN111434605B (en) | Control method and test method for micro-electromechanical system device | |
Xiong et al. | A Low-g MEMS inertial switch based on direct contact sensing method | |
US11661333B2 (en) | Semiconductor structure and manufacturing method thereof | |
US20180111822A1 (en) | Contact point structure, electronic device, and electronic apparatus | |
US20230331544A1 (en) | Micromechanical sensor structure with damping structure | |
Mizuno | A Novel MEMS Actuator Driven with a Low DC Voltage. | |
CN112744779A (en) | Micro-electro-mechanical system and method of manufacturing the same | |
JP2009226498A (en) | Micromechanical apparatus and manufacturing method of micromechanical apparatus | |
JP2009178816A (en) | Micromachine apparatus and method for manufacturing the same |