TWI696206B - Electron ray generation device and electron ray application device - Google Patents
Electron ray generation device and electron ray application device Download PDFInfo
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本發明的課題在於提供一種容易維護的電子射線產生裝置以及電子射線應用裝置。 An object of the present invention is to provide an electron ray generation device and an electron ray application device that are easy to maintain.
電子射線產生裝置係具備真空腔室、光電陰極支撐具、活性化容器以及腔室內動力傳達構件。光電陰極支撐具係能夠對著活性化容器相對移動。 The electron beam generating device includes a vacuum chamber, a photocathode support, an activation container, and a power transmission member in the chamber. The photocathode support can move relatively to the activation container.
Description
本發明係關於一種電子射線產生裝置(electron beam generator)以及電子射線應用裝置(electron beam applicator),特別是關於一種光電陰極支撐具(photocathode holder)能夠對著活性化容器相對移動的電子射線產生裝置以及電子射線應用裝置。 The present invention relates to an electron beam generator (electron beam generator) and an electron beam applicator (electron beam applicator), in particular to an electron beam generator (photocathode holder) capable of relatively moving against an activated container And electron beam application device.
以利用GaAs型半導體的光電陰極(photocathode)的電子束源(GaAs型光電陰極電子束源)來說,至今為止對加速器科學領域做出以下貢獻:作為擁有高極化度的自旋極化(spin polarization)電子束源的基本粒子、強粒子(hadron)物理實驗(溫伯格角(Weinberg angle)的精密測定)、作為能夠以高度反覆短脈衝(pulse)且大電流的高輝度(luminance)電子束源之1kW的紅外線自由電子雷射(InfraRed Free Electron Laser)產生等。 For the electron beam source (GaAs photocathode electron beam source) using a photocathode of a GaAs semiconductor, the following contributions have been made to the field of accelerator science: as spin polarization with a high degree of polarization ( spin polarization) basic particles of electron beam sources, physics experiments of hadrons (precision measurement of Weinberg angle), high brightness (luminance) that can repeat short pulses with high height and large current InfraRed Free Electron Laser (InfraRed Free Electron Laser) generation of 1kW of electron beam source, etc.
進一步地,GaAs型光電陰極電子束源係成為用於次世代放射光源用加速器之能夠以低放射率(emittance)(束在相 位空間中占的面積)且大電流的高輝度電子束源的有力候補,且在靠近宇宙誕生之謎的線形型之次世代加速器未來計畫「國際線性對撞機(linear collider)計畫」中,被認為是唯一實用的高性能自旋極化電子束源。 Further, the GaAs type photocathode electron beam source is used as an accelerator for the next-generation radiation light source and can be used at a low emissance The area occupied by the bit space) is a powerful candidate for a high-current high-brightness electron beam source, and the linear next-generation accelerator project "International Linear Collider Project" near the mystery of the birth of the universe. It is considered to be the only practical high-performance spin-polarized electron beam source.
另一方面,對半導體器件(device)的微細化或功能材料的高度化而言,構造內的電性特性計測、磁性特性計測與以原子規模(scale)的詳細之構造解析或元素分析一併被認為是不可或缺的。對於該要求有著超越現有性能的次世代之觀測技術、計測技術的需求,其中作為要素技術的電子束源之高性能化是不可或缺的。從高重複短脈衝、高輝度與高自旋極化的性能來看,GaAs型光電陰極電子束源作為用於次世代電子顯微鏡的電子束源被視為是有力的。 On the other hand, for the miniaturization of semiconductor devices or the advancement of functional materials, the measurement of electrical properties and magnetic properties within the structure are combined with detailed structural analysis or elemental analysis on an atomic scale It is considered indispensable. For this requirement, the next generation of observation technology and measurement technology that surpass the existing performance are required. Among them, the high performance of the electron beam source as an element technology is indispensable. From the point of view of the performance of high repetitive short pulse, high brightness and high spin polarization, the GaAs photocathode electron beam source is regarded as a powerful electron beam source for the next generation electron microscope.
GaAs型光電陰極電子束源係利用負電子親和力(Negative Electron Affinity(以下會有將「負電子親和力」記載為「NEA」的情形))(負電子親和力表面:真空位準(vacuum level)變得比傳導帶(conduction band)底更低的狀態)。藉由利用NEA表面,能夠將已從價帶(valence band)光激發到傳導帶底之潛在位準(potential level)的電子就這樣地作為電子束取出到真空中。圖1係表示從GaAs型光電陰極電子束源之電子束生成的概念,能夠說明接下來會說明的(1)激發過程(2)擴散過程(3)脫出過程之三步驟模型的現象論(參照非專利文獻1)。 The GaAs type photocathode electron beam source system utilizes negative electron affinity (Negative Electron Affinity (the following may describe "negative electron affinity" as "NEA")) (negative electron affinity surface: the vacuum level becomes Lower than the bottom of the conduction band). By using the NEA surface, electrons that have been excited from the valence band light to the potential level at the bottom of the conduction band can thus be taken out into the vacuum as electron beams. Figure 1 shows the concept of electron beam generation from a GaAs photocathode electron beam source, which can explain the phenomenology of the three-step model of (1) excitation process (2) diffusion process (3) extraction process ( Refer to Non-Patent Document 1).
(1)對光電陰極射入激發光,將價帶電子對傳導帶激發(激發過程)。 (1) The excitation light is injected into the photocathode to excite the valence band electrons to the conduction band (excitation process).
(2)對傳導帶激發的電子係向表面擴散(擴散過程)。 (2) The electron system excited by the conduction band diffuses to the surface (diffusion process).
(3)已到達表面的電子係將表面障壁作為通道(tunnel)向真空中脫出(脫出過程)。 (3) The electron system that has reached the surface pulls out the surface barrier as a tunnel into the vacuum (extraction process).
在GaAs半導體中有大約4eV的電子親和力(Electron Affinity;EA)(真空位準與傳導帶底的能量差),為了形成NEA表面狀態,下述的程序(process)是必要的。 In GaAs semiconductors, there is an electron affinity (Electron Affinity; EA) of about 4 eV (the energy difference between the vacuum level and the conduction band bottom). In order to form the NEA surface state, the following process is necessary.
(1)首先,在真空中加熱p型摻雜(doping)的GaAs半導體,去除氧化物或碳化物等的表面雜質地進行清淨。藉此,能夠使能帶彎折(band bending)產生於表面區域,將真空位準降低半導體之能帶隙(bandgap)的一半左右(φ B)。 (1) First, a p-type doping GaAs semiconductor is heated in a vacuum to remove surface impurities such as oxides or carbides for cleaning. In this way, band bending can be caused in the surface area, and the vacuum level can be reduced by about half of the semiconductor bandgap (φ B).
(2)接下來,為了於結晶表面得到微小的光電流,如圖2所示般先蒸鍍銫(cesium),之後,每當光電流飽和就交互地重複進行銫蒸鍍與氧附加,直到得到最大的光電流為止。依據此方法,能夠藉由降低剩下的真空位準(φ D)來形成NEA表面狀態(參照非專利文獻1)。 (2) Next, in order to obtain a tiny photocurrent on the crystal surface, cesium is first vapor-deposited as shown in FIG. 2, and then, each time the photocurrent is saturated, cesium vapor deposition and oxygen addition are repeatedly repeated until the Until the maximum photocurrent is obtained. According to this method, the NEA surface state can be formed by lowering the remaining vacuum level (φ D) (see Non-Patent Document 1).
另外,NEA表面狀態係指依照上述程序將光電陰極之真空位準的能量位準(energy level)設成比傳導帶底的能量位準更低的狀態的情形。然而,即使光電陰極之真空位準的能量位準比傳導帶底的能量位準更高,也能夠從光電陰極向真空中釋放出電子。又,即使是在將光電陰極處理成 NEA表面狀態後,若持續電子的釋放,也會有以下的情形:光電陰極之真空位準的能量位準從比傳導帶底的能量位準更低的位準返回高位準並且釋放出電子。因此,在將光電陰極作為電子束源使用的情形下,雖然較佳為盡可能地使光電陰極之真空位準的能量位準降低,但設成或維持成NEA表面狀態並非必須。因此,在本發明中的「電子親和力之降低處理」係指用以使光電陰極之真空位準的能量位準降低到能夠釋放出電子的位準之處理。以下,有將「電子親和力之降低處理」記載為「EA表面處理」、將光電陰極之真空位準的能量位準藉由「電子親和力之降低處理」降低到能夠釋放出電子的位準之狀態記載為「EA表面」的情形。 In addition, the NEA surface state refers to a case where the energy level of the vacuum level of the photocathode is set to a state lower than the energy level of the bottom of the conduction band according to the above procedure. However, even if the energy level of the vacuum level of the photocathode is higher than the energy level of the bottom of the conduction band, electrons can be released from the photocathode into the vacuum. Also, even if the photocathode is processed into After the surface state of NEA, if the electrons are continuously released, there will be the following situation: the energy level of the vacuum level of the photocathode returns from a lower level than the energy level at the bottom of the conduction band to a high level and releases electrons. Therefore, when a photocathode is used as an electron beam source, although it is preferable to reduce the energy level of the vacuum level of the photocathode as much as possible, it is not necessary to set or maintain the NEA surface state. Therefore, the "electron affinity reduction process" in the present invention refers to a process for reducing the energy level of the vacuum level of the photocathode to a level capable of releasing electrons. In the following, the "electron affinity reduction process" is described as "EA surface treatment", and the energy level of the photocathode vacuum level is reduced to a state where electrons can be released by the "electron affinity reduction process" The case described as "EA surface".
EA表面會因為微量的H2O、CO、CO2等的殘留氣體之吸附或已離子化(ionized)的殘留氣體向EA表面的逆流而劣化。因此,為了從光電陰極長期穩定地取出電子束,為了處理與維持,超高真空度是必要的。又,能夠從已進行EA表面處理的光電陰極取出的電子的量是有限的,在釋放出一定量的電子束之後,有再次將光電陰極表面進行EA表面處理的必要。 The EA surface deteriorates due to the adsorption of trace amounts of residual gas such as H 2 O, CO, CO 2 , or the backflow of ionized residual gas toward the EA surface. Therefore, in order to take out the electron beam from the photocathode stably for a long period of time, in order to handle and maintain, ultra-high vacuum is necessary. In addition, the amount of electrons that can be taken out of the photocathode that has been surface-treated with EA is limited. After a certain amount of electron beams are released, it is necessary to subject the photocathode surface to EA surface treatment again.
習知的使用已經過EA表面處理的光電陰極之電子槍係至少包含EA表面處理腔室(chamber)、電子槍腔室、已經過EA表面處理的光電陰極之運送構造。如上所述,已 經過EA表面處理的光電陰極必須在超高真空中進行EA處理後保持超高真空狀態且不暴露於外氣地裝填到電子槍,此外經過了一定時間的光電陰極有必要再次進行EA表面處理,但在習知上,EA表面處理腔室與電子槍腔室必須要個別地設置。其理由在於,習知的EA表面處理雖然是採用在腔室內直接於光電陰極蒸鍍表面處理材料的方法,但若在同一腔室內進行EA表面處理,EA表面處理材料會附著於電子槍腔室以及腔室內的各種裝置,尤其已附著在電極附近的EA表面處理材料會成為電場釋放暗電流(dark current)之產生原因,明顯降低電子槍的功能。 A conventional electron gun using a photocathode that has been surface-treated by EA includes at least a EA surface-processing chamber (chamber), an electron gun chamber, and a photocathode that has been surface-treated by EA. As mentioned above, The photocathode after the EA surface treatment must be EA treated in an ultrahigh vacuum to maintain the ultrahigh vacuum state and be loaded into the electron gun without being exposed to outside air. In addition, after a certain period of time, it is necessary to perform the EA surface treatment again, but Conventionally, the EA surface treatment chamber and the electron gun chamber must be set separately. The reason is that although the conventional EA surface treatment is a method of directly depositing surface treatment material on the photocathode in the chamber, if EA surface treatment is performed in the same chamber, the EA surface treatment material will adhere to the electron gun chamber and Various devices in the chamber, especially the EA surface treatment material that has been attached near the electrode, will cause the electric field to release dark current, which significantly reduces the function of the electron gun.
然而,在個別地設置EA表面處理腔室與電子槍腔室的情況下,首先需要兩個設為超高真空狀態的腔室,進一步地需要用以將已在EA表面處理腔室處理過的光電陰極持續保持在超高真空狀態地運送到電子槍腔室的運送構造,故有著電子槍裝置會非常地大型化的問題。又,由於需要將已經過EA表面處理的光電陰極在維持超高真空的狀態下從EA表面處理腔室移動、安裝到電子槍腔室且在光電陰極再次EA表面處理時從電子槍腔室移動、安裝到EA表面處理腔室的緣故,因此需要精密地設計裝置且需要適切的操作以使光電陰極不會在運送中脫落,存在著裝置管理變得繁雜的問題。 However, in the case where the EA surface treatment chamber and the electron gun chamber are separately provided, first two chambers set to an ultra-high vacuum state are required, and furthermore, a photoelectric chamber that has been processed in the EA surface treatment chamber is required. Since the cathode is continuously transported to the electron gun chamber while maintaining an ultra-high vacuum state, there is a problem that the electron gun device will be very large. In addition, due to the need to move the EA surface-treated photocathode from the EA surface treatment chamber while maintaining ultra-high vacuum, install it into the electron gun chamber, and move and install it from the electron gun chamber when the photocathode is EA surface-treated again Due to the EA surface treatment chamber, it is necessary to design the device precisely and appropriate operation to prevent the photocathode from falling off during transportation, and there is a problem that the device management becomes complicated.
所以,為了解決上述問題,在專利文獻1(日本特許第
5808021號公報)中將用以進行使光電陰極材料之電子親和力降低的處理的活性化容器配置在真空腔室內。亦即,在專利文獻1中將用以使電子束產生的腔室與用以進行EA表面處理的腔室共通化。
Therefore, in order to solve the above problems, Patent Document 1 (Japanese Patent No.
In No. 5808021), an activation container for processing to reduce the electron affinity of the photocathode material is placed in a vacuum chamber. That is, in
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
專利文獻1:日本特許第5808021號公報。 Patent Literature 1: Japanese Patent No. 5808021.
[非專利文獻] [Non-patent literature]
非專利文獻1:MRS-J NEWS,Vol.20,No.2,May 2008。 Non-Patent Literature 1: MRS-J NEWS, Vol. 20, No. 2, May 2008.
此外,在專利文獻1中記載有設置用以改變光電陰極支撐具之位置的驅動構造。在專利文獻1中,馬達(motor)等的驅動構造係被安裝於活性化容器,或是被安裝於真空腔室的內側。
In addition,
但是,在將馬達配置於真空腔室內的情形會產生以下問題。第一,在將真空腔室內設成高真空狀態的過程中,需要加熱真空腔室(例如攝氏200度左右),但藉由該加熱等會有馬達故障或磁鐵變弱的可能性。在馬達故障的情況下,必須解除真空腔室內的真空狀態將馬達予以修理或交 換。而要將真空腔室內設成高真空狀態需要長時間(例如一週)。因此,如果在高真空狀態實現後發現馬達故障,因為馬達的修理或交換的緣故,故花費在高真空狀態的實現之長時間準備作業變成白費。第二,馬達係包含有磁鐵等的磁場生成構件。因此,從光電陰極材料所取出的電子之軌道會因該磁場生成構件而遭扭曲。 However, when the motor is arranged in the vacuum chamber, the following problems occur. First, in the process of setting the vacuum chamber to a high vacuum state, it is necessary to heat the vacuum chamber (for example, about 200 degrees Celsius), but the motor or the magnet may be weakened by this heating or the like. In the case of a motor failure, the vacuum state in the vacuum chamber must be released to repair or deliver the motor change. It takes a long time (for example, one week) to set the vacuum chamber to a high vacuum state. Therefore, if a motor failure is found after the high vacuum state is realized, the preparation work that takes a long time to realize the high vacuum state becomes in vain because of the repair or exchange of the motor. Second, the motor system includes magnetic field generating members such as magnets. Therefore, the orbit of the electrons taken out of the photocathode material will be distorted by the magnetic field generating member.
所以,本發明之目的在於提供一種容易維護(maintenance)的電子射線產生裝置以及電子射線應用裝置。又,本發明之任意附加的目的係提供如下的電子射線產生裝置以及電子射線應用裝置:於真空腔室內配置了活性化容器的電子射線產生裝置中不設置用以在真空腔室內生成磁場的馬達,能夠抑制電子射線(electron beam)的軌道從希望的軌道偏離。 Therefore, an object of the present invention is to provide an electron beam generating device and an electron beam applying device which are easy to maintain. In addition, any additional object of the present invention is to provide the following electron beam generating device and electron beam application device: the electron beam generating device in which the activation container is arranged in the vacuum chamber is not provided with a motor for generating a magnetic field in the vacuum chamber It is possible to suppress the deviation of the orbit of the electron beam from the desired orbit.
如下所示,本發明係關於電子射線產生裝置以及電子射線應用。 As shown below, the present invention relates to electron beam generating devices and electron beam applications.
(1)一種電子射線產生裝置,係具備:真空腔室;光電陰極支撐具,係被配置於前述真空腔室內,用以支撐光電陰極材料;活性化容器,係被配置於前述真空腔室內,支撐使前述光電陰極材料之電子親和力降低的表面處理材料;以及腔室內動力傳達構件,係被配置於前述真空腔室 內,對前述光電陰極支撐具或前述活性化容器傳達驅動力(drive force);前述光電陰極支撐具係能夠對著前述活性化容器相對移動。 (1) An electron ray generating device, comprising: a vacuum chamber; a photocathode support, which is arranged in the vacuum chamber to support the photocathode material; an activation container, which is arranged in the vacuum chamber, Supporting a surface treatment material that reduces the electron affinity of the aforementioned photocathode material; and a power transmission member in the chamber, which is arranged in the aforementioned vacuum chamber Inside, the drive force is transmitted to the photocathode support or the activation container; the photocathode support is capable of relatively moving against the activation container.
(2)如前述(1)所記載之電子射線產生裝置,其中更具備:能量生成部,係用以生成驅動前述腔室內動力傳達構件的機械性能量;前述能量生成部係被配置於前述真空腔室之外。 (2) The electron beam generating device according to (1) above, further comprising: an energy generating section for generating mechanical energy for driving the power transmission member in the chamber; the energy generating section is arranged in the vacuum Outside the chamber.
(3)如前述(2)所記載之電子射線產生裝置,其中前述能量生成部係驅動源或手動操作構件。 (3) The electron beam generating device according to (2) above, wherein the energy generating unit is a driving source or a manual operation member.
(4)如前述(1)至(3)中任一項所記載之電子射線產生裝置,其中更具備被配置於前述真空腔室之外的腔室外動力傳達構件;前述腔室外動力傳達構件與前述腔室內動力傳達構件係經由前述真空腔室的無孔壁(holeless wall)而連接成能夠傳達動力。 (4) The electron beam generating device according to any one of (1) to (3) above, further comprising an external power transmission member disposed outside the vacuum chamber; the external power transmission member and The power transmission member in the chamber is connected via a holeless wall of the vacuum chamber to transmit power.
(5)如前述(4)所記載之電子射線產生裝置,其中前述腔室外動力傳達構件係對前述腔室內動力傳達構件純機械性地傳達驅動力。 (5) The electron beam generating device as described in (4) above, wherein the power transmission member outside the chamber transmits the driving force purely mechanically to the power transmission member inside the chamber.
(6)如前述(1)至(5)中任一項所記載之電子射線產生裝置,其中前述腔室內動力傳達構件係被配置於已從前述光電陰極支撐具之中心軸偏離中心的位置。 (6) The electron beam generating device according to any one of (1) to (5) above, wherein the power transmission member in the chamber is disposed at a position that has been deviated from the center of the center axis of the photocathode support.
(7)如前述(1)至(6)中任一項所記載之電子射線產生裝置,其中更具備:導引(guide)構件,係被配置於前述真空腔室內,且沿著第一方向延伸;前述導引構件係引導前述腔室內動力傳達構件的沿著前述第一方向的移動。 (7) The electron beam generating device as described in any one of (1) to (6) above, further comprising: a guide member arranged in the vacuum chamber and along the first direction Extension; the guide member guides the movement of the power transmission member in the chamber along the first direction.
(8)如前述(1)至(7)中任一項所記載之電子射線產生裝置,其中前述腔室內動力傳達構件係具有:旋轉構件;以及變換機構,係將前述旋轉構件的旋轉變換成前述光電陰極支撐具或前述活性化容器的直線移動。 (8) The electron beam generating device according to any one of (1) to (7) above, wherein the power transmission member in the chamber has: a rotating member; and a conversion mechanism that converts the rotation of the rotating member into The linear movement of the photocathode support or the activation container.
(9)如前述(1)至(8)中任一項所記載之電子射線產生裝置,其中更具備:陽極(anode),係已被配置於前述真空腔室內;以及護罩(shield),係用以抑制從前述真空腔室內之突起物產生放電;前述護罩係被配置於前述陽極與前述腔室內動力傳達構件的至少一部分之間。 (9) The electron beam generating device described in any one of (1) to (8) above, further comprising: an anode, which has been disposed in the vacuum chamber; and a shield, It is used to suppress the discharge from the protrusions in the vacuum chamber; the shield is arranged between the anode and at least a part of the power transmission member in the chamber.
(10)如前述(1)至(9)中任一項所記載之電子射線產生裝置,其中前述活性化容器係具有:第一孔,係能供被從前述光電陰極材料釋放出的電子或前述光電陰極材料通過;以及第二孔,係插通有前述腔室內動力傳達構件。 (10) The electron ray generating device as described in any one of (1) to (9) above, wherein the activation container has a first hole capable of supplying electrons or electrons released from the photocathode material or The photocathode material passes through; and the second hole is inserted through the power transmission member in the chamber.
(11)如前述(1)至(10)中任一項所記載之電子射線產生裝置,其中前述真空腔室係包含伸縮部;藉由使前述伸縮部伸縮來移動前述光電陰極支撐具或前述活性化容器。 (11) The electron beam generating device according to any one of (1) to (10) above, wherein the vacuum chamber includes a telescopic portion; the photocathode support or the foregoing is moved by expanding and contracting the telescopic portion Activation container.
(12)如前述(11)所記載之電子射線產生裝置,其中前述伸縮部係構成前述真空腔室的本體部之一部分,或被安裝於前述真空腔室的頂部。 (12) The electron beam generating device according to (11) above, wherein the telescopic portion is a part of a body portion constituting the vacuum chamber, or is mounted on the top of the vacuum chamber.
(13)如前述(1)所記載之電子射線產生裝置,其中更具備:能量生成部,係用以生成驅動前述腔室內動力傳達構件的熱能量。 (13) The electron beam generating device according to (1) above, further comprising: an energy generating section for generating thermal energy for driving the power transmitting member in the chamber.
(14)一種電子射線應用裝置,係包含前述(1)至(13)中任一項所記載之電子射線產生裝置;前述電子射線應用裝置 係電子槍、自由電子雷射加速器、電子顯微鏡、電子射線全像攝影(electron beam holography)裝置、電子射線描繪裝置、電子射線繞射(electron beam diffraction)裝置、電子射線檢查裝置、電子射線金屬積層造型裝置、電子射線微影法(electron beam lithography)裝置、電子射線加工裝置、電子射線硬化裝置、電子射線滅菌裝置、電子射線殺菌裝置、電漿(plasma)產生裝置、原子狀元素產生裝置、自旋極化電子射線產生裝置、陰極發光(cathode luminescence)裝置或逆光電子分光裝置。 (14) An electron ray application device including the electron ray generation device described in any one of (1) to (13); the electron ray application device Department of electron guns, free electron laser accelerators, electron microscopes, electron beam holography (electron beam holography) devices, electron beam drawing devices, electron beam diffraction (electron beam diffraction) devices, electron beam inspection devices, electron beam metal deposition modeling Device, electron beam lithography device, electron beam processing device, electron beam hardening device, electron beam sterilization device, electron beam sterilization device, plasma generation device, atomic element generation device, spin Polarized electron ray generation device, cathode luminescence device or backlight electron spectroscopic device.
依據本發明,能夠提供一種容易維護的電子射線產生裝置以及電子射線應用裝置。 According to the present invention, it is possible to provide an electron ray generation device and an electron ray application device which are easy to maintain.
1‧‧‧電子射線產生裝置 1‧‧‧ Electron ray generator
2‧‧‧真空腔室 2‧‧‧Vacuum chamber
3‧‧‧光電陰極支撐具 3‧‧‧Photocathode support
3a‧‧‧背面 3a‧‧‧Back
3b‧‧‧桿 3b‧‧‧rod
3c‧‧‧雌螺桿部 3c‧‧‧Female screw part
3d‧‧‧加熱器 3d‧‧‧heater
4‧‧‧活性化容器 4‧‧‧Activated container
5‧‧‧動力傳達機構 5‧‧‧Power transmission mechanism
5a‧‧‧腔室外動力傳達構件 5a‧‧‧Outdoor power transmission member
5b‧‧‧腔室內動力傳達構件 5b‧‧‧Power transmission member in the chamber
7‧‧‧能量生成部 7‧‧‧Energy Generation Department
7a‧‧‧驅動源 7a‧‧‧Drive source
7b‧‧‧手動操作構件 7b‧‧‧Manually operated components
10‧‧‧電子槍 10‧‧‧Electronic gun
11‧‧‧EA表面處理腔室 11‧‧‧EA surface treatment chamber
12‧‧‧電子槍腔室 12‧‧‧Electronic gun chamber
13‧‧‧運送構造 13‧‧‧Transport structure
20、20a‧‧‧本體部 20、20a‧‧‧Body
21‧‧‧頂部 21‧‧‧Top
21a‧‧‧凸緣部 21a‧‧‧Flange
22、26‧‧‧伸縮部 22, 26‧‧‧ Telescopic Department
24‧‧‧無孔壁 24‧‧‧No hole wall
28‧‧‧第二凸緣部 28‧‧‧Second flange part
30‧‧‧電性絕緣構件 30‧‧‧Electrical insulating member
42‧‧‧支撐構件 42‧‧‧Supporting member
44-1‧‧‧第一孔 44-1‧‧‧First hole
44-2‧‧‧第二孔 44-2‧‧‧Second hole
45‧‧‧孔 45‧‧‧ hole
52‧‧‧導引構件 52‧‧‧Guiding member
53‧‧‧軸 53‧‧‧axis
54‧‧‧萬向接頭 54‧‧‧Universal joint
58‧‧‧第一凸緣部 58‧‧‧First flange part
58c‧‧‧螺桿孔 58c‧‧‧Screw hole
58d‧‧‧貫通孔 58d‧‧‧Through hole
59‧‧‧螺桿棒 59‧‧‧Screw rod
60a、60b‧‧‧導入端子 60a, 60b‧‧‧Import terminal
60a1、60b1‧‧‧真空區域內端部 60a1, 60b1‧‧‧End in the vacuum area
60a2‧‧‧真空區域外端部 60a2‧‧‧Outer end of vacuum area
61a、61b、61c‧‧‧裸線 61a, 61b, 61c ‧‧‧ bare wire
62‧‧‧第一端子台 62‧‧‧First terminal block
63‧‧‧第二端子台 63‧‧‧Second terminal block
64‧‧‧接觸部 64‧‧‧Contact
72‧‧‧操作旋鈕 72‧‧‧Operation knob
74‧‧‧伸縮管 74‧‧‧Telescopic tube
76‧‧‧缸 76‧‧‧ cylinder
78‧‧‧活塞 78‧‧‧ Piston
80‧‧‧光源 80‧‧‧Light source
81‧‧‧光透過窗 81‧‧‧light through the window
82‧‧‧陽極 82‧‧‧Anode
83‧‧‧電源部 83‧‧‧Power Department
88‧‧‧護罩 88‧‧‧Shield
88a‧‧‧外表面 88a‧‧‧Outer surface
91‧‧‧真空泵 91‧‧‧Vacuum pump
92‧‧‧氣體供給裝置 92‧‧‧Gas supply device
95‧‧‧加熱構造 95‧‧‧Heating structure
96‧‧‧切口 96‧‧‧cut
97‧‧‧方向控制構造 97‧‧‧Direction control structure
98‧‧‧方向控制板 98‧‧‧Direction control board
100‧‧‧電子射線應用裝置 100‧‧‧Electronic ray application device
220‧‧‧內筒 220‧‧‧Inner tube
222‧‧‧外筒 222‧‧‧Outer cylinder
224‧‧‧膜 224‧‧‧membrane
531‧‧‧第一軸 531‧‧‧ First axis
532‧‧‧第二軸 532‧‧‧Second axis
533‧‧‧旋轉構件 533‧‧‧rotating member
533c‧‧‧雄螺桿部 533c‧‧‧Male screw
541‧‧‧第一萬向接頭 541‧‧‧The first universal joint
542‧‧‧第二萬向接頭 542‧‧‧Second universal joint
580‧‧‧導引構件 580‧‧‧Guiding member
A‧‧‧光電陰極材料 A‧‧‧Photocathode material
AR、AR’‧‧‧區域 AR, AR’‧‧‧ region
AX1‧‧‧中心軸 AX1‧‧‧Central axis
AX2‧‧‧旋轉軸 AX2‧‧‧rotation axis
B‧‧‧表面處理材料 B‧‧‧Surface treatment materials
C1‧‧‧第一室
C1‧‧‧
C2‧‧‧第二室 C2‧‧‧Second Room
D1‧‧‧箭頭 D1‧‧‧arrow
P‧‧‧泵 P‧‧‧Pump
P0‧‧‧內壓 P 0 ‧‧‧Internal pressure
P1、P2‧‧‧壓力 P 1 , P 2 ‧‧‧ pressure
V‧‧‧閥 V‧‧‧Valve
Z‧‧‧方向 Z‧‧‧ direction
圖1係表示從GaAs型光電陰極電子束源之電子束生成的概念。 FIG. 1 shows the concept of electron beam generation from a GaAs type photocathode electron beam source.
圖2係表示EA表面狀態的形成順序。 Fig. 2 shows the formation order of the surface state of EA.
圖3係第一實施形態中的電子射線產生裝置之概略剖視圖。 3 is a schematic cross-sectional view of the electron beam generating device in the first embodiment.
圖4係第一實施形態中的電子射線產生裝置之概略剖視圖。 4 is a schematic cross-sectional view of the electron beam generating device in the first embodiment.
圖5係表示驅動源之一例的概略剖視圖。 5 is a schematic cross-sectional view showing an example of a driving source.
圖6係表示伸縮部之一例的概念圖。 FIG. 6 is a conceptual diagram showing an example of a telescopic section.
圖7係第二實施形態中的電子射線產生裝置之概略剖視圖。 7 is a schematic cross-sectional view of an electron beam generating device in a second embodiment.
圖8A係圖7中的區域AR的放大圖。 FIG. 8A is an enlarged view of the area AR in FIG. 7.
圖8B係圖7中的區域AR’的放大圖。 Fig. 8B is an enlarged view of the area AR' in Fig. 7.
圖9係第三實施形態中的電子射線產生裝置之概略剖視圖。 9 is a schematic cross-sectional view of an electron beam generating device in a third embodiment.
圖10中的(a)以及圖10中的(b)係示意性地表示加熱構造之一例的圖。 (A) in FIG. 10 and (b) in FIG. 10 are diagrams schematically showing an example of a heating structure.
圖11係示意性地表示方向控制構造之一例的圖。 FIG. 11 is a diagram schematically showing an example of a direction control structure.
圖12係示意性地表示電極之配置的一例的圖。 12 is a diagram schematically showing an example of the arrangement of electrodes.
圖13係電子射線應用裝置的功能方塊圖(functional block diagram)。 FIG. 13 is a functional block diagram of an electron beam application device.
以下一邊參照圖式,一邊詳細說明實施形態中的電子射線產生裝置1以及電子射線應用裝置100。另外,在本說明書中,對具有同種功能的構件附加相同或類似的符號。而且,會有對已被附加相同或類似的符號的構件省略重複之說明的情形。
Hereinafter, referring to the drawings, the electron
(方向的定義) (Definition of direction)
在本說明書中,將光電陰極支撐具3朝活性化容器4的第一孔44-1移動的方向定義為Z方向。也可以取而代之地將自光電陰極(光電陰極材料)所釋放出的電子行進的方
向定義為Z方向。雖然Z方向例如是鉛直向下的方向,但Z方向並非被限定為鉛直向下的方向。
In this specification, the direction in which the
(第一實施形態的概要) (Outline of the first embodiment)
參照圖3至圖6,對第一實施形態中的電子射線產生裝置1進行說明。圖3以及圖4係第一實施形態中的電子射線產生裝置1之概略剖視圖。圖5係表示驅動源7a之一例的概略剖視圖。圖6係表示伸縮部之一例的概念圖。另外,圖3係表示執行EA表面處理時光電陰極支撐具3的位置,圖4係表示執行電子射線的產生處理時光電陰極支撐具3的位置。又,在圖4中,斜線部分係表示真空腔室2內的真空區域。進一步地,在圖4中,箭頭D1係表示從光電陰極(亦即光電陰極材料A)所釋放出的電子行進的方向。
The electron
電子射線產生裝置1係在真空氛圍中使電子射線產生生的裝置。真空氛圍係被實現在真空腔室2內。附帶地,電子射線產生裝置1也可以是在高電壓下使電子射線產生的裝置。在此情形下,從光電陰極所釋放出的電子之行進方向係依存於高電壓作用時真空腔室內的電場。
The electron
電子射線產生裝置1係具備真空腔室2、光電陰極支撐具3、活性化容器4以及被配置於真空腔室內的腔室內動力傳達構件5b。
The electron
真空腔室2係在電子射線產生裝置1中用以形成真空氛圍的構件。在電子射線產生裝置1的使用時,真空腔室2的內部壓力被設定在例如10-5Pa以下。為了使真空腔室2的內部壓力降低而使用真空泵(vacuum pump)91。真空泵91例如與電子射線產生裝置1分開地被準備,且經由配管連接於電子射線產生裝置1。又,亦可經由配管於真空腔室2連接有氣體供給裝置92,該氣體供給裝置92係供給用於EA表面處理的氣體。氣體供給裝置92供給的氣體例如是氧、NF3、N2等。
The
真空腔室2的形狀無特別限制,真空腔室2的形狀例如是圓筒形狀。於圖3記載之例中,真空腔室2係具備本體部20、頂部21以及底部。又,真空腔室2的材質例如是不鏽鋼、鈦、μ合金(mu-metal)等的金屬、玻璃、藍寶石(sapphire)、陶瓷等的非金屬。
The shape of the
光電陰極支撐具3係被配置於真空腔室2內,用以支撐光電陰極材料A。於圖3記載之例中,光電陰極支撐具3係被配置於活性化容器4內,該活性化容器4係被配置於真空腔室2內。
The
光電陰極支撐具3係能夠對著活性化容器4相對移動。光電陰極支撐具3位於在圖3中所示的位置時,將活
性化容器4所支撐的表面處理材料B予以活性化(氣化),藉此能夠使表面處理材料B蒸鍍於光電陰極材料A。又,光電陰極支撐具3位於在圖4中所示的位置時,對光電陰極支撐具3所支撐的光電陰極材料A照射光,藉此能夠使電子(電子射線)自光電陰極材料A產生。
The
另外,光電陰極支撐具3的材質無特別限制。例如可以使用鉬、鈦、鉭、不鏽鋼等作為光電陰極支撐具3的材質。
In addition, the material of the
又,只要是可EA表面處理的材料,則用以形成光電陰極的光電陰極材料A並無特別限制。作為光電陰極材料A而言,例如例示有III-V族半導體材料以及II-V族半導體材料。具體而言,例示有AlN、Ce2Te、GaN、K2CsSb、AlAs、GaP、GaAs、GaSb、InAs等。舉出金屬作為光電陰極材料A的其他例子,具體而言例示有Mg、Cu、Nb、LaB6、SeB6、Ag等。藉由將光電陰極材料A進行EA表面處理,能夠製作光電陰極。在使用已使用了光電陰極材料A之光電陰極的情形下,變得能夠在對應於半導體之隙能(gap energy)的近紫外光-紅外光波長區域選擇電子激發光。而且,藉由半導體的材料、構造的選擇,對應於電子束之用途的電子束源性能(量子產率(quantum yield)、耐久性、單色性、時間響應性、自旋極化度)成為可行。因此,用於電子激發的光源並非被限定於高輸出(瓦(watt)級)-高頻率 (數百MHz)-短脈衝(數百飛(femto)秒)的雷射。即使是相對低價的雷射二極體(laser diode),也變得能夠進行前所未有之高性能的束生成。 In addition, the photocathode material A used to form the photocathode is not particularly limited as long as it can be surface-treated with EA. As the photocathode material A, for example, group III-V semiconductor materials and group II-V semiconductor materials are exemplified. Specifically, examples include AlN, Ce 2 Te, GaN, K 2 CsSb, AlAs, GaP, GaAs, GaSb, InAs, and the like. Other examples of the metal as the photocathode material A are given, and specific examples include Mg, Cu, Nb, LaB 6 , SeB 6 , and Ag. By subjecting the photocathode material A to EA surface treatment, a photocathode can be produced. In the case of using a photocathode in which the photocathode material A has been used, it becomes possible to select electron excitation light in the near ultraviolet-infrared wavelength region corresponding to the gap energy of the semiconductor. Moreover, by selecting the material and structure of the semiconductor, the performance of the electron beam source (quantum yield, durability, monochromaticity, time response, spin polarization) corresponding to the application of the electron beam becomes feasible. Therefore, the light source for electronic excitation is not limited to high output (watt level)-high frequency (hundreds of MHz)-short pulse (hundreds of femto seconds) laser. Even relatively low-cost laser diodes (laser diodes) have become capable of beam generation with unprecedented high performance.
在電子射線產生裝置1的使用時,光電陰極材料A係被光照射。光電陰極材料A接受到光時便釋放出電子。在圖4記載之例中,被釋放出的電子係藉由在光電陰極支撐具3與陽極82之間所施加的電壓而沿Z方向移動。
When the electron
光電陰極材料A係被配置於光電陰極材料A可被光照射的位置。在圖4記載之例中,於光電陰極支撐具3的底面配置有光電陰極材料A。
The photocathode material A is arranged at a position where the photocathode material A can be irradiated with light. In the example shown in FIG. 4, the photocathode material A is arranged on the bottom surface of the
在圖3以及圖4記載之例中,為了使光電陰極支撐具3於在圖3中所示的位置與在圖4中所示的位置之間移動,對光電陰極支撐具3賦予有驅動力。
In the examples described in FIGS. 3 and 4, in order to move the
活性化容器4係被配置於真空腔室2內,用以支撐使光電陰極材料A的電子親和力降低之表面處理材料B。在活性化容器4內表面處理材料B被活性化(被氣化)。接下來,被活性化(被氣化)的表面處理材料B係被蒸鍍於光電陰極材料A。
The
活性化容器4係包含第一孔44-1。第一孔44-1是能夠
供由光電陰極支撐具3所支撐之光電陰極材料A通過的孔,或者是能夠供自光電陰極材料A所釋放出的電子通過的孔。第一孔44-1之大小只要為至少能供電子通過的大小即可。從易於加工的觀點、或是從易於調整自光電陰極材料A所釋放出的電子與第一孔44-1之間的位置關係的觀點等來看,第一孔44-1之徑例如是1nm以上10mm以下,更佳為50μm以上5mm以下。又,在使光電陰極材料A經由第一孔44-1露出於活性化容器4外的情形下(參照圖4),第一孔44-1之大小也可以比上述數值範圍的上限更大。
The
活性化容器4之材質無特別限制。例如可使用玻璃、鉬、陶瓷、藍寶石、鈦、鎢、鉭、不鏽鋼等的耐熱性材料(例如能耐300℃以上之熱、更佳為能耐400℃之熱的耐熱性材料)作為活性化容器4之材質。
The material of the
活性化容器4之形狀無特別限制。活性化容器4之形狀只要是能在內部支撐表面處理材料B的形狀即可。活性化容器4之形狀例如為圓筒形。
The shape of the
活性化容器4之內部與活性化容器4之外部係經由第一孔44-1或其他的孔45而連通。因此,活性化容器4之內部壓力係與活性化容器4之外部壓力實質上相等。由於活性化容器4被配置於真空腔室2內,故在電子射線產生裝置1的使用時活性化容器4之內部也被維持在真空狀態。
The inside of the
在電子射線產生裝置1的使用時,光電陰極材料A係釋放出電子。由於能自光電陰極材料A取出之電子的量為有限,故有必要將光電陰極表面再度進行EA表面處理。在實施形態的電子射線產生裝置1中,能夠在單一的真空腔室2內進行電子射線之產生與EA表面處理雙方。亦即,在圖3所示的狀態中,若將活性化容器4或表面處理材料B自身加熱而將表面處理材料B活性化(氣化),則表面處理材料B被蒸鍍於光電陰極材料A。這樣一來,能夠進行EA表面處理。又,在圖4所示的狀態中,若對光電陰極材料A照射光,能夠使電子射線產生。
When the electron
在本說明書中,表面處理材料B意指能夠將光電陰極材料進行EA表面處理的材料。只要是能夠進行EA表面處理的材料,則表面處理材料B沒有特別限制。例如例示有Li、Na、K、Rb、Cs、Te、Sb等作為構成表面處理材料B的元素。另外,在前述元素之中,Li、Na、K、Rb、Cs會單獨自燃,無法保存、利用。因此,對於Li、Na、K、Rb、Cs而言,有必要以這些元素之複合元素、含這些元素之化合物的形態使用。另一方面,在以化合物的形態使用的情形下,有必要在前述元素之蒸鍍時不讓雜質氣體產生。因此,在將自Li、Na、K、Rb、Cs中所選擇的元素作為表面處理材料B使用的情形下,較佳為組合如下的還原劑而使用:抑制Cs2CrO4、Rb2CrO4、Na2CrO4、K2CrO4等化合物與
雜質氣體之產生的還原劑。表面處理材料B係使用加熱構造而在活性化容器4內被氣化且被蒸鍍於光電陰極材料A。
In this specification, the surface treatment material B means a material capable of subjecting the photocathode material to EA surface treatment. The surface-treated material B is not particularly limited as long as it can be subjected to EA surface treatment. For example, Li, Na, K, Rb, Cs, Te, Sb, etc. are exemplified as elements constituting the surface treatment material B. In addition, among the aforementioned elements, Li, Na, K, Rb, and Cs ignite spontaneously and cannot be stored or used. Therefore, it is necessary for Li, Na, K, Rb, and Cs to be used in the form of a composite element of these elements or a compound containing these elements. On the other hand, when used in the form of a compound, it is necessary to prevent impurity gas from being generated during the vapor deposition of the aforementioned elements. Therefore, when an element selected from Li, Na, K, Rb, and Cs is used as the surface treatment material B, it is preferably used in combination with the following reducing agent: suppression of Cs 2 CrO 4 and Rb 2 CrO 4 , Na 2 CrO 4 , K 2 CrO 4 and other compounds and the reducing agent generated by the impurity gas. The surface treatment material B is vaporized in the
在圖3以及圖4記載之例中,活性化容器4係被固定於真空腔室2之內側的壁面,無法相對於真空腔室2的壁面移動。而且,驅動力從腔室內動力傳達構件5b被傳達到光電陰極支撐具3,光電陰極支撐具3相對於活性化容器4而移動。另外,如後述的第三實施形態般,活性化容器4亦可經由支撐構件而被固定在真空腔室2內。取而代之地,亦可將光電陰極支撐具3固著於真空腔室2之壁面,驅動力從腔室內動力傳達構件5b被傳達到活性化容器4。在此情形下,活性化容器4相對於光電陰極支撐具3移動。
In the examples shown in FIGS. 3 and 4, the
腔室內動力傳達構件5b係被配置於真空腔室2內且為用以對光電陰極支撐具3或活性化容器4傳達驅動力的構件。在第一實施形態中,腔室內動力傳達構件5b為非磁鐵(non-magnet)構件。在圖3記載之例中,被配置於真空腔室2內之腔室內動力傳達構件5b的數量為一個,該一個腔室內動力傳達構件5b為非磁鐵構件。在被配置於真空腔室2內的腔室內動力傳達構件5b的數量為N個(另外,「N」為1以上的自然數)時,N個腔室內動力傳達構件5b為非磁鐵構件。另外,非磁鐵構件意指:沒有被永久磁化的構件、或就算被永久磁化而永久磁化之程度也弱的構件,由於不產生磁場(或是弱磁場)的緣故,故不對自光電陰極材
料所釋放出之電子的電子射線軌道造成影響、或對自光電陰極材料所釋放出之電子的電子射線軌道造成的影響輕微的構件。在第一實施形態中,使用銅、鈦、不鏽鋼、鋁等無法永久磁化的金屬等作為腔室內動力傳達構件5b的材質。又,在第一實施形態中,在使用鐵、鎳等能夠永久磁化的金屬等作為腔室內動力傳達構件5b的至少一部分構件的材質之情形下,該構件係被配置於不會對電子射線軌道造成影響的位置。
The
在第一實施形態中,腔室內動力傳達構件5b較佳為非磁鐵構件。因此,腔室內動力傳達構件5b不會對電子射線軌道造成實質性的影響。這樣一來,抑制電子射線的軌道從所希望的軌道偏離的情形。
In the first embodiment, the
(在第一實施形態中任意附加的構成例) (A configuration example arbitrarily added in the first embodiment)
參照圖3至圖6,說明在第一實施形態中能夠附加地採用的構成例。 3 to 6, an example of a configuration that can be additionally adopted in the first embodiment will be described.
(構成例1) (Configuration example 1)
參照圖3對構成例1進行說明。構成例1係關於能量生成部7的構成例。
The configuration example 1 will be described with reference to FIG. 3. The configuration example 1 relates to a configuration example of the
在圖3記載之例中,能量生成部7係生成用以驅動腔室內動力傳達構件5b的機械性能量。接下來,藉由能量生
成部7所生成的機械性能量係經由腔室外動力傳達構件5a而被傳達到腔室內動力傳達構件5b。這樣一來,腔室內動力傳達構件5b被驅動(換言之,腔室內動力傳達構件5b移動)。又,藉由腔室內動力傳達構件5b移動,對光電陰極支撐具3賦予有驅動力。結果,光電陰極支撐具3相對於活性化容器4移動。如上述般,在本說明書中的「腔室內動力傳達構件5b」係意指用以將藉由能量生成部7所生成的機械性能量對光電陰極支撐具3「傳達」的構件,並不同於馬達等自行生成驅動力的驅動構造。另外,在圖3記載之例中,腔室內動力傳達構件5b與光電陰極支撐具3是被以一體成型製作的一個構件。也可以取而代之地將腔室內動力傳達構件5b與光電陰極支撐具3個別地製作,經由任意之結合構造將兩者連結。
In the example shown in FIG. 3, the
在圖3記載之例中,能量生成部7係驅動源(drive source)7a,用以生成機械性能量。驅動源7a例如是致動器(actuator)。致動器例如是藉由流體壓所驅動的致動器(空壓式的致動器、油壓式的致動器等)、電動致動器、螺線管(solenoid)致動器。
In the example shown in FIG. 3, the
圖5係表示驅動源7a為流體壓驅動的致動器之例。在圖5記載之例中,致動器係具備缸(cylinder)76以及活塞(piston)78。活塞78係被配置於缸76之內部,被連結於伸縮管(bellows)等之伸縮部22的端部。活塞78亦具有作為
連結於伸縮部22之無孔壁24的功能。活塞78係藉由空氣、油等流體自泵P被供給到缸76之第一室C1內而移動,或是藉由空氣、油等流體從第一室C1排出而移動。活塞78係連結於腔室內動力傳達構件5b。因此,當活塞78移動時,腔室內動力傳達構件5b也移動。
FIG. 5 shows an example in which the
在圖5記載之例中,缸76係具備第一室C1與第二室C2。而且,活塞78係藉由第一室C1內之壓力P1與第二室C2內之壓力P2的差壓而被驅動。另外,P0係真空腔室2內的內壓。在圖5記載之例中,缸76以及活塞78之受壓面至少具有作為腔室外動力傳達構件的功能。
In the example shown in FIG. 5, the
另外,在用以連結泵P與第一室C1的配管係配置有閥(valve)V,藉由閥V調整在配管內流動的流體之流量。 In addition, a valve V is arranged in the piping for connecting the pump P and the first chamber C1, and the flow rate of the fluid flowing in the piping is adjusted by the valve V.
在使用致動器作為驅動源7a的情形下,容易將光電陰極支撐具3定位於所希望的位置。為了將光電陰極支撐具3定位於所希望的位置,例如控制被供給到流體壓致動器之流體的流量、被供給到電動致動器之電流、或是被供給到螺線管致動器之電流等。
In the case of using an actuator as the driving
在構成例1中,能量生成部7(更具體而言為驅動源7a)被配置於真空腔室2之外。因此,即使在能量生成部7包含磁鐵等的磁場生成構件之情形下,該磁場生成構件對電
子射線軌道的干涉亦止於最小限度。又,在能量生成部7不包含磁場生成構件的情形下,能量生成部7不會干涉電子射線軌道。
In the configuration example 1, the energy generating unit 7 (more specifically, the driving
又,在構成例1中,由於能量生成部7(更具體而言為驅動源7a)被配置於真空腔室2之外的緣故,故即使在真空腔室2內成為高溫的情形下,亦抑制能量生成部7之溫度上升。因此,能量生成部7不易故障。進一步地,假設在能量生成部7已故障的情形下,能量生成部7的修理也是容易的。例如,即使在真空腔室2內已成為高真空狀態後確定了能量生成部7故障的情形下,能夠照常維持真空腔室2內的高真空狀態來進行能量生成部7的修理。
Moreover, in the configuration example 1, since the energy generating part 7 (more specifically, the driving
另外,在構成例1中,能量生成部7(更具體而言為驅動源7a)為線性(linear)致動器。取而代之地,能量生成部7亦可為轉動(rotary)致動器。在此情形下,可設置將轉動致動器的旋轉驅動力變換成光電陰極支撐具的直線運動之機構。又,在構成例1中,能量生成部7可以是手動操作構件而不是致動器等的驅動源。在此情形下,藉由人力生成機械性能量。
In addition, in the configuration example 1, the energy generator 7 (more specifically, the
又,在構成例1中說明了對光電陰極支撐具賦予有驅動力且光電陰極支撐具相對於活性化容器移動的例子。取而代之地,也可以設成對活性化容器賦予有驅動力且活性 化容器相對於光電陰極支撐具移動。在此情形下,在上述構成例1的說明中將「光電陰極支撐具」以及「活性化容器」分別改稱為「活性化容器」以及「光電陰極支撐具」即可。 In addition, in Configuration Example 1, an example in which the driving force is applied to the photocathode support tool and the photocathode support tool moves relative to the activation container has been described. Instead, it can be set to give a driving force and activity to the activation container The chemical container moves relative to the photocathode support. In this case, in the description of the above configuration example 1, the "photocathode support" and the "activation container" may be changed to the "activation container" and the "photocathode support", respectively.
(構成例2) (Configuration example 2)
參照圖3對構成例2進行說明。構成例2係關於動力傳達機構5的構成例。
The configuration example 2 will be described with reference to FIG. 3. Configuration example 2 is a configuration example of the
在構成例2中,能量生成部7係經由動力傳達機構5對光電陰極支撐具3賦予驅動力。結果,光電陰極支撐具3相對於活性化容器4移動。在圖3記載之例中,動力傳達機構5係包含被配置於能量生成部7與光電陰極支撐具3之間的軸(shaft)。
In the configuration example 2, the
另外,動力傳達機構5並非限定於軸。動力傳達機構5可以是齒輪(gear)機構、螺桿機構、連桿(link)機構、曲柄(crank)機構或萬向接頭(universal joint)等的接頭機構,或者包含這些的組合。
In addition, the
在圖3記載之例中,動力傳達機構5(例如軸)的一部分被配置於真空腔室2內,且動力傳達機構5(例如軸)的一部分被配置於真空腔室2外。換言之,動力傳達機構5係包含:腔室外動力傳達構件5a,係被配置於真空腔室外;以
及腔室內動力傳達構件5b,係被配置於真空腔室內。而且,腔室外動力傳達構件5a與腔室內動力傳達構件5b係經由真空腔室2的無孔壁24連接成能夠傳達動力。另外,亦可將腔室內動力傳達構件5b稱為第一動力傳達構件,將腔室外動力傳達構件5a稱為第二動力傳達構件。
In the example shown in FIG. 3, part of the power transmission mechanism 5 (for example, shaft) is arranged inside the
在動力傳達機構5的一部分被插通於設置在真空腔室之貫通孔的情形下,即使對貫通孔配置密封(seal)構件,也無法避開真空腔室內之真空度惡化。相對於此,在構成例2中,腔室外動力傳達構件5a與腔室內動力傳達構件5b經由真空腔室2的無孔壁24而連接成能夠傳達動力。因此,真空腔室內的真空度不會惡化。
When a part of the
如圖3所示般,電子射線產生裝置1亦可具備用以引導腔室內動力傳達構件5b之移動的導引構件52。在圖3記載之例中,導引構件52係沿第一方向(例如Z方向)延伸,引導腔室內動力傳達構件5b沿著第一方向的移動。由於導引構件52的存在,故抑制在光電陰極支撐具3移動時光電陰極支撐具3傾斜。在圖3記載之例中,導引構件52係被固定於真空腔室2(更具體而言是導引構件52的上端部被固定於真空腔室2的頂部21)。
As shown in FIG. 3, the electron
另外,從抑制光電陰極支撐具3之傾斜的觀點來看,導引構件52的數量較佳為兩個以上。但是,導引構件52
的數量也可為一個。
In addition, from the viewpoint of suppressing the tilt of the
在圖3記載之例中,腔室內動力傳達構件5b之中心軸與光電陰極支撐具3之中心軸AX1一致。因此,能夠將動力傳達機構5簡單化。
In the example shown in FIG. 3, the central axis of the
在構成例2中,對動力傳達機構5將來自能量生成部7的驅動力傳達至光電陰極支撐具3的例子進行了說明。亦可取而代之地設成:動力傳達機構5將來自能量生成部的動力傳達至活性化容器4。在此情形下,在上述構成例2的說明中,將「光電陰極支撐具」以及「活性化容器」分別改稱為「活性化容器」以及「光電陰極支撐具」即可。
In the configuration example 2, an example in which the
另外,在構成例2中,腔室內動力傳達構件5b之移動係沿Z方向的方向上的移動。換言之,腔室內動力傳達構件5b不在垂直於Z方向的方向上移動。因此,能夠將動力傳達機構5簡單化。又,由於腔室內動力傳達構件5b不在垂直於Z方向的方向上移動的緣故,故在真空腔室2中之其他的構成要件之配置自由度高。也可以取而代之地在構成例2中將腔室內動力傳達構件5b設成能夠在垂直於Z方向的方向上移動。
In addition, in the configuration example 2, the movement of the
(構成例3) (Configuration example 3)
參照圖3至圖6對構成例3進行說明。構成例3係關
於伸縮部22的構成例。在構成例3中,真空腔室2係包含伸縮部22。而且,在構成例3中,使用來自能量生成部7的驅動力使伸縮部22伸縮,藉此使光電陰極支撐具3移動。
The configuration example 3 will be described with reference to FIGS. 3 to 6. Composition example 3
A configuration example of the
在真空腔室2包含伸縮部22的情形下,能夠藉由使真空腔室2的容積變化來驅動真空腔室2內的光電陰極支撐具3。另外,藉由伸縮部22的存在,真空腔室2內的真空度不會惡化。
When the
在圖3記載之例中,伸縮部22係包含伸縮管(蛇腹構件)。而且,伸縮部22之一端部係連接於動力傳達機構5(更具體而言為無孔壁24),伸縮部22之另一端部係連接於真空腔室2(更具體而言為真空腔室2之凸緣(flange)部21a)。又,在圖3記載之例中,伸縮部22係被設於真空腔室2之頂部21。在將伸縮部22與能量生成部7雙方配置於真空腔室2之頂部21的情形下,能夠將電子射線產生裝置1的全體構造簡單化。
In the example shown in FIG. 3, the
另外,伸縮部22之配置以及構造並非被限定於在圖3記載之例。例如亦可如圖6所示般,藉由內筒220、外筒222以及連接內筒220與外筒222的膜224來構成伸縮部22。
In addition, the arrangement and structure of the
在構成例3中,對動力傳達機構5將來自能量生成部
7的驅動力傳達至光電陰極支撐具3的例子進行了說明。亦可取而代之地設成動力傳達機構5將來自能量生成部的驅動力傳達至活性化容器4的方式。在此情形下,在上述構成例3之說明中,將「光電陰極支撐具」以及「活性化容器」分別改稱為「活性化容器」以及「光電陰極支撐具」即可。
In the configuration example 3, the
(構成例4) (Configuration example 4)
參照圖3以及圖4對構成例4進行說明。構成例4係關於光源80之配置的構成例。
The configuration example 4 will be described with reference to FIGS. 3 and 4. The configuration example 4 is a configuration example regarding the arrangement of the
在構成例4中,光源80被配置在真空腔室2外。來自光源80的光係經由被配置在真空腔室2之壁部的光透過窗81而被照射到光電陰極材料A。在圖3記載之例中,光透過窗81係被配置得比光電陰極支撐具3更靠近Z方向側。取而代之地,光源80亦可被配置得比光電陰極支撐具更靠近Z方向的反方向側。亦即,亦可設成從光電陰極支撐具3的背面3a側(亦即,與光電陰極材料A所配置的面為反向的面側)輸入光的方式。在此情形下,可在光電陰極支撐具3配置能供光通過的孔或者是光透過材料(例如透明的材料)。進一步地,在圖3記載之例中,雖然光源80是被配置在真空腔室2外,但在朝向光電陰極材料A照射來自光纖(optical fiber)之光的情形下,該光纖的光射出端亦可被配置於真空腔室2內(光纖的光射出端亦可被取而代之
地配置於真空腔室外)。
In Configuration Example 4, the
(構成例5) (Configuration example 5)
參照圖3以及圖4對構成例5進行說明。構成例5係關於陽極82與電源部83的構成例。
A configuration example 5 will be described with reference to FIGS. 3 and 4. Configuration example 5 is a configuration example of the
在構成例5中,電子射線產生裝置1係具備:陽極82;以及電源部83,係將電壓施加在陽極82與光電陰極支撐具3(陰極電極)之間。陽極82係被配置在真空腔室2內,電源部83係被配置在真空腔室2之外。在圖3記載之例中,電源部83的陽極被電性連接於陽極82,電源部83的陰極經由腔室內動力傳達構件5b而被電性連接於光電陰極支撐具3。亦即,腔室內動力傳達構件5b亦具有作為導電構件的功能。
In Configuration Example 5, the electron
在第一實施形態中,亦可採用上述構成例1至構成例5中的任一構成例。在第一實施形態中亦可取而代之地採用上述構成例1至構成例5中的任兩個構成例。例如,在第一實施形態中亦可採用如下的構成例:構成例1、2;構成例1、3;構成例1、4;構成例1、5;構成例2、3;構成例2、4;構成例2、5;構成例3、4;構成例3、5或構成例4、5。在第一實施形態中亦可取而代之地採用上述構成例1至構成例5中的任三個構成例以上。 In the first embodiment, any of the above configuration examples 1 to 5 may be adopted. In the first embodiment, any two of the above configuration examples 1 to 5 may be used instead. For example, in the first embodiment, the following configuration examples may be adopted: configuration examples 1, 2; configuration examples 1, 3; configuration examples 1, 4; configuration examples 1, 5; configuration examples 2, 3; configuration example 2, 4; configuration examples 2, 5; configuration examples 3, 4; configuration examples 3, 5 or configuration examples 4, 5. In the first embodiment, any three or more of the above configuration examples 1 to 5 may be used instead.
另外,在將高電壓施加在陽極82與光電陰極支撐具3之間的情形下,亦可依照需求以電性絕緣構件形成電子射線產生裝置之構成構件的一部分。電性絕緣構件係以陶瓷等的周知的絕緣材料製作即可。在圖3記載之例中,在腔室外動力傳達構件5a與無孔壁24之間設有電性絕緣構件30;又,用以收容動力傳達機構5的容器亦由電性絕緣構件30所形成。另外,於圖3記載之電性絕緣構件30的位置僅為例示,只要是在「電源部83-陽極82-光電陰極支撐具3」所形成的電路以外能夠防止電在陽極82與光電陰極支撐具3之間流通的電路產生的地方,則不管設在哪都可以。例如,可用電性絕緣材料形成真空腔室2之本體部的一部分。又,在圖3記載之例中,雖然電源部83連接於陽極82與腔室內動力傳達構件5b,但只要能形成「電源部83-陽極82-光電陰極支撐具3」之電路,則亦可連接於其他構件。例如,亦可設成將電源83的一端連接於凸緣部21a,經由導引構件52、腔室內動力傳達構件5b而與光電陰極支撐具3電性連接的方式。另外,雖然在圖3中省略圖示,但亦可在「電源部83-陽極82-光電陰極支撐具3」所形成的電路以外形成用以加熱表面處理材料B的電路。以該電路而言,例如只要將導入端子固定於凸緣部21a並以電線連接真空區域內側之導入端子端部與表面處理材料B的加熱構造(後述)即可。又,有於光電陰極支撐具3設置用以加熱光電陰極之加熱器(heater)的情形。在設置加熱器的情形下,例如只要將導入端子固定於凸緣部21a並
以電線連接真空區域內側之導入端子的端部與加熱器即可。另外,在超高真空中無法使用氣體釋放量多的樹脂。因此,以作為電線而言,較佳為因應需求在露出金屬的裸線使用了陶瓷等絕緣材料製的管或絕緣珠(bead insulator)等的電線,而非以樹脂被覆的電線。
In addition, in the case where a high voltage is applied between the
在大氣中以下情形為可行:(1)於金屬表面容易生成有氧化膜,藉此金屬彼此間的摩擦係數被保持得低;(2)使用潤滑油進一步地降低摩擦係數。另一方面,在超高真空環境中齊備以下容易引發磨耗或固著等的條件:(3)當氧化膜因摩擦而遭到去除時,由於無法重新製作氧化膜的緣故,故引起金屬彼此間的凝集(agglutination),招致摩擦係數的顯著上升或固著;(4)無法使用會成為真空容器內之汙染的原因的潤滑油;(5)因沒有(氣體或潤滑油的)對流引起的熱傳達,招致熱釋放未被進行且擺動部的溫度上升等。因此,關於在真空區域內以與其他構件能夠相對移動地略接觸的方式被配置的構件,亦能以表面處理或非金屬材料製作相對移動的一方或雙方的構件。 The following situations are feasible in the atmosphere: (1) An oxide film is easily formed on the surface of the metal, whereby the coefficient of friction between the metals is kept low; (2) The friction coefficient is further reduced by using lubricating oil. On the other hand, in the ultra-high vacuum environment, the following conditions that easily cause abrasion or fixation are prepared: (3) When the oxide film is removed due to friction, because the oxide film cannot be remade, it causes metal to metal Agglutination, which causes a significant increase or fixation of the friction coefficient; (4) Unable to use lubricating oil that will cause contamination in the vacuum container; (5) Heat due to the absence of convection (of gas or lubricating oil) It is communicated that heat release is not performed and the temperature of the swinging part rises. Therefore, regarding a member arranged in a vacuum region so as to be in relatively movable contact with other members, one or both of the members that move relatively can also be produced by surface treatment or a non-metallic material.
在第一實施形態中,相對移動的構件的組合例如可列舉:腔室內動力傳達構件5b以及導引構件52、腔室內動力傳達構件5b以及凸緣部21a。
In the first embodiment, a combination of relatively moving members may include, for example, a chamber
以作為表面處理而言,只要金屬彼此間的凝集不產生、 摩擦係數能夠降低則無特別限制,例如可列舉DLC(Diamond like carbon;類鑽碳)塗覆(coating)、TiN塗覆、TiCN塗覆、CrN塗覆、S-AH塗覆等。以作為非金屬材料而言,只要在高溫的真空環境下具有耐性則無特別限制,可列舉陶瓷、C/C複合材料(carbon/carbon composite)等。 As a surface treatment, as long as the aggregation of metals does not occur, The friction coefficient can be reduced without particular limitation, and examples thereof include DLC (Diamond like carbon; diamond-like carbon) coating, TiN coating, TiCN coating, CrN coating, and S-AH coating. The non-metallic material is not particularly limited as long as it has resistance in a high-temperature vacuum environment, and examples include ceramics and C/C composite materials (carbon/carbon composite).
(第二實施形態) (Second embodiment)
參照圖7至圖9對第二實施形態進行說明。圖7係第二實施形態中的電子射線產生裝置1之概略剖視圖。圖8A係圖7中的區域AR之放大圖。圖8B係圖7中的區域AR’之放大圖。
The second embodiment will be described with reference to FIGS. 7 to 9. 7 is a schematic cross-sectional view of the electron
在第二實施形態中,動力傳達機構5以及能量生成部7之具體構成不同於第一實施形態中的動力傳達機構以及能量生成部之具體構成。因此,在第二實施形態中以動力傳達機構5以及能量生成部7為中心說明,對於其他構成則省略會重複的說明。
In the second embodiment, the specific configurations of the
在圖7記載之例中,腔室內動力傳達構件5b被配置於已從光電陰極支撐具3之中心軸AX1偏離中心之位置。在此情形下,變得能夠將來自光源80的光從光電陰極支撐具3的背面3a側導入至光電陰極材料A。另外,為了將來自光源80的光從光電陰極支撐具3的背面3a側導入至光電陰極材料A,較佳為光電陰極支撐具3的桿(rod)3b係具有
光導入孔,或者較佳為藉由光透過材料(透明的材料)所構成。
In the example shown in FIG. 7, the
另外,在圖7記載之例中,光源80被配置在真空腔室2之外。因此,光源80不會被暴露在真空腔室2內的苛刻環境。另外,在將光源80配置於真空腔室2之外的情形下,只要藉由光透過材料(例如透明的材料)構成真空腔室2之至少一部分即可。接下來,只要將來自光源80的光經由該光透過材料導入至真空腔室2內即可。
In the example shown in FIG. 7, the
另外,在第二實施形態中,光源80的配置並非被限定於在圖7記載之例。光源80亦可被配置於真空腔室2內。又,光源80的位置亦可與第一實施形態中的光源之位置相同。
In the second embodiment, the arrangement of the
在圖7記載之例中,腔室內動力傳達構件5b係具有:旋轉構件533,能夠繞與第一方向(Z方向)平行的軸旋轉;以及變換機構,係將旋轉構件533的旋轉變換成光電陰極支撐具3的直線移動(例如沿第一方向的移動)。在圖7記載之例中,變換機構為被設於旋轉構件533的雄螺桿部533c與被設於光電陰極支撐具3的雌螺桿部3c。雄螺桿部533c與雌螺桿部3c係互相地螺合。
In the example shown in FIG. 7, the
進一步地,在圖7記載之例中,腔室內動力傳達構件
5b係包含萬向接頭54。因此,動力傳達機構5的配置自由度提高。在圖7記載之例中,腔室內動力傳達構件5b係包含兩個萬向接頭54。但是,腔室內動力傳達構件5b所具備的萬向接頭54之數量並非被限定於兩個。萬向接頭54之數量可以是一個,也可以是三個以上。另外,在圖7記載之例中,雖然表示使用了萬向接頭作為腔室內動力傳達構件5b的例子,但只要是能在腔室內傳達動力的構件則亦可為其他的構件。例如,也可以使用金屬製的索(wire)等作為與萬向接頭同樣地傳達旋轉的構件。
Further, in the example shown in FIG. 7, the power transmission member in the chamber
The 5b system includes a universal joint 54. Therefore, the degree of freedom of arrangement of the
在圖7記載之例中,顯示在凸緣部21a與陽極82之間施加有電壓的例子。在高能量的電子射線為必要的情形下,有於陽極與陰極之間施加有高電壓的情形。此時,若在真空腔室2內存在突起物,則有從該突起物產生放電的疑慮。在腔室內動力傳達構件5b之中,從活性化容器4之第二孔44-2突出的部分也有成為使放電產生之突起物的可能性。因此,電子射線產生裝置1亦可因應需求而包含用以抑制從真空腔室2內之突起物產生放電之護罩88。
In the example shown in FIG. 7, an example in which a voltage is applied between the
在圖7記載之例中,腔室內動力傳達構件5b的一部分被活性化容器4覆蓋,腔室內動力傳達構件5b之中露出於活性化容器4之外部的部分係藉由護罩88而相對於陽極82被隱藏。換言之,護罩88被配置於陽極82與腔室內動力傳達構件5b的至少一部分(具體而言是腔室內動力傳達
構件5b之中露出於活性化容器4之外部的部分)之間。因此,抑制從腔室內動力傳達構件5b產生放電。
In the example shown in FIG. 7, a part of the
只要是能夠抑制從腔室內動力傳達構件5b產生放電,則護罩88之形狀以及配置為任意。在圖7記載之例中,護罩88之外表面88a係圓滑的曲面。又,於護罩88之外表面88a不存在角部分。
The shape and arrangement of the shield 88 are arbitrary as long as the discharge of power from the
較佳為使用不易產生放電的材料作為護罩88的材質。護罩88的材質例如是鈦、鉬、不鏽鋼、TiN等。亦可於護罩88的表面塗覆鈦、鉬、不鏽鋼、TiN等。 It is preferable to use a material that does not easily cause discharge as the material of the shield 88. The material of the shield 88 is, for example, titanium, molybdenum, stainless steel, TiN, or the like. The surface of the shield 88 may also be coated with titanium, molybdenum, stainless steel, TiN, or the like.
在圖7記載之例中,活性化容器4具有作為覆蓋腔室內動力傳達構件5b的一部分之第一護罩的功能,護罩88具有覆蓋腔室內動力傳達構件5b的其他一部分之第二護罩的功能。另外,如第一實施形態般,在腔室內動力傳達構件5b的全體被活性化容器4覆蓋的情形下,亦可省略具有作為第二護罩之功能的護罩88。又,在第二實施形態的情形下,若施加的電壓低則放電的疑慮也變少,故亦可省略護罩88。
In the example shown in FIG. 7, the
參照圖8A對第二實施形態中的能量生成部7之一例進行說明。圖8A係圖7中的區域AR之放大圖。
An example of the
在圖8A記載之例中,能量生成部7係手動操作構件7b。在圖8A記載之例中,若使手動操作構件7b之操作旋鈕72旋轉,則腔室外動力傳達構件5a會繞旋轉軸AX2旋轉。若腔室外動力傳達構件5a繞旋轉軸AX2旋轉,則無孔壁24會繞旋轉軸AX2公轉。另外,由於無孔壁24被固著於伸縮管74,故無法自轉。若無孔壁24繞旋轉軸AX2公轉,則腔室內動力傳達構件5b之第一軸531會繞旋轉軸AX2旋轉。這樣一來,來自能量生成部7的驅動力(換言之為機械性能量)會經由腔室外動力傳達構件5a被傳達至腔室內動力傳達構件5b。
In the example shown in FIG. 8A, the
另外,在圖7以及圖8A記載之例中,腔室外動力傳達構件5a與腔室內動力傳達構件5b也和第一實施形態之構成例2同樣地經由真空腔室2之無孔壁24而被連接成能夠傳達動力。因此,真空腔室2內之真空度不會惡化。
In addition, in the examples shown in FIGS. 7 and 8A, the
在圖7記載之例中,腔室內動力傳達構件5b係包含複數個軸53與複數個萬向接頭54。更具體而言,第一軸531的旋轉經由第一萬向接頭541而被傳達到第二軸532。又,第二軸532的旋轉經由第二萬向接頭542而被傳達到第三軸(旋轉構件533)。接下來,藉由第三軸(旋轉構件533)旋轉,光電陰極支撐具3直線地移動。
In the example shown in FIG. 7, the
第二實施形態係達到與第一實施形態同樣的功效。 The second embodiment achieves the same effect as the first embodiment.
又,在包含第二實施形態的幾個實施形態中,在腔室內動力傳達構件5b被配置在已從光電陰極支撐具3之中心軸偏離中心之位置的情形下,光源等的配置自由度提升。
In addition, in some embodiments including the second embodiment, when the
進一步地,在包含第二實施形態的幾個實施形態中,在腔室內動力傳達構件5b具有旋轉構件533與用以將旋轉構件之旋轉變換成光電陰極支撐具3的直線移動之變換機構的情形下,光電陰極支撐具3的定位控制變得容易。
Further, in several embodiments including the second embodiment, the
又,在包含第二實施形態的幾個實施形態中,在腔室內動力傳達構件5b包含萬向接頭的情形下,包含腔室內動力傳達構件5b之動力傳達機構的配置自由度提升。
In addition, in some embodiments including the second embodiment, when the
進一步地,在包含第二實施形態的幾個實施形態中,在電子射線產生裝置1包含護罩88的情形下,抑制從腔室內動力傳達構件5b等產生放電。
Further, in some embodiments including the second embodiment, when the electron
又,在包含第二實施形態的幾個實施形態中,在腔室外動力傳達構件5a與腔室內動力傳達構件5b經由真空腔室2之無孔壁24而被連接成能夠傳達動力的情形下,真空腔室內的真空度惡化被有效地抑制。
Furthermore, in several embodiments including the second embodiment, when the
另外,在第二實施形態中說明了動力傳達機構5將來
自能量生成部之驅動力傳達至光電陰極支撐具3的例子。取而代之地,亦可設成動力傳達機構5將來自能量生成部之驅動力傳達至活性化容器4的方式。
In addition, in the second embodiment, the
又,在第二實施形態中說明了能量生成部7為手動操作構件7b的例子。取而代之地,亦可設成藉由馬達或轉動致動器等來驅動操作旋鈕72等的方式。在此情形下,在第二實施形態中的能量生成部7變成驅動源7a。
In addition, in the second embodiment, an example in which the
關於在真空區域內被配置成能夠與其他的構件相對移動的構件,在第二實施形態中也跟第一實施形態同樣地能夠以表面處理或非金屬材料製作相對移動的一方或雙方的構件。在第二實施形態中之相對移動的構件之組合例如可舉出:第一軸531以及凸緣部21a、雄螺桿部533c以及雌螺桿部3c、導引構件52以及桿3b。
In the second embodiment, similar to the first embodiment, one or both of the relatively movable members can be produced by surface treatment or non-metallic material in the second embodiment in the relative arrangement of members that can move relative to other members in the vacuum area. The combination of relatively moving members in the second embodiment includes, for example, the
在第二實施形態中,也可跟第一實施形態同樣地設置用以加熱表面處理材料B的電路以及為了對用以加熱光電陰極的加熱器供給電的電路。圖8B係圖7中的區域AR’之放大圖,且為表示用以對加熱器供給電的電路之其他例子的圖。如上述般,用以形成電路的電線較佳為裸線。另一方面,若以裸線將在真空區域內可動的構件與構件予以連接,則裸線也在真空區域內變得可動,且有因與其他的構件接觸而短路或斷線的疑慮。因此,亦可設成能夠藉由 接點方式電性連接相對移動的構件與構件的形式。 In the second embodiment, a circuit for heating the surface treatment material B and a circuit for supplying electricity to the heater for heating the photocathode may be provided in the same manner as the first embodiment. 8B is an enlarged view of the area AR' in FIG. 7 and is a diagram showing another example of a circuit for supplying power to the heater. As described above, the wires used to form the circuit are preferably bare wires. On the other hand, if a member that is movable in the vacuum area is connected to the member with a bare wire, the bare wire also becomes movable in the vacuum area, and there is a possibility of short circuit or disconnection due to contact with other members. Therefore, it can also be set The contact method electrically connects the relatively moving member and the form of the member.
參照圖8B對藉由接點方式連接的例子更具體地說明。在圖8B記載之例中係包含:導入端子60a;第一端子台62;第二端子台63;連接部64,係以接點方式連接第一端子台62與第二端子台63;以及裸線61a、61b,係將這些構件予以連接。導入端子60a係以相對於凸緣部21a成為絕緣的方式被貫通、固定,且變得能在真空區域內端部60a1與真空區域外端部60a2中與電線連接。第一端子台62係被固定成以一端與凸緣部21a絕緣的方式。導入端子60a之真空區域內端部60a1與第一端子台62係以裸線61a連接。第二端子台63係被固定於光電陰極支撐具3。於第一端子台62係設有接觸於第二端子台63的接觸部64。接觸部64較佳為以板彈簧、線圈(coil)等可恆常接觸於第二端子台63的具有賦勢力之材料來形成。另外,接觸部64亦可設成設於第二端子台63且接觸於第一端子台62的方式。而且,以裸線61b連接第二端子台63與加熱器3d,藉此能夠從真空腔室的外側將電流動於加熱器3d。又,表面處理材料B之加熱構造(後述)係使用裸線61c與導入端子60b之真空區域內端部60b1連接即可,該導入端子60b係以相對於凸緣部21a成為絕緣的方式貫通、固定。在圖8B表示的實施形態中,相對移動的第一端子台62與第二端子台63藉由接觸部64接觸、通電,且裸線61a至裸線61c係連接不會相對移動的構件與構件。因此,在圖
8B表示的實施形態中,不會有因為配置於真空區域內的裸線與其他的構件接觸而短路或斷線的疑慮。另外,在圖8B表示的實施形態也可採用第一實施形態。又,在圖8B表示的實施形態係將接點方式之具體態樣的一個例子予以表示的形態,只要是以接點方式接觸、通電相對移動的構件與構件的話,也可以是其他的形態。
The example of connection by the contact method will be described more specifically with reference to FIG. 8B. The example shown in FIG. 8B includes: the lead-in terminal 60a; the first
(第三實施形態) (Third Embodiment)
參照圖9對第三實施形態進行說明。圖9係在第三實施形態中之電子射線產生裝置1的概略剖視圖。
The third embodiment will be described with reference to FIG. 9. 9 is a schematic cross-sectional view of the electron
在第三實施形態中,與第一實施形態中的電子射線產生裝置不同的點為:伸縮部26構成真空腔室2之本體部的一部分。又,在第三實施形態中,活性化容器4、動力傳達機構5以及能量生成部7之具體構成不同於第一實施形態中的活性化容器、動力傳達機構以及能量生成部之具體構成。因此,在第三實施形態中以伸縮部26、活性化容器4、動力傳達機構5以及能量生成部7為中心說明,對其他構成的會成為贅述之說明予以省略。
In the third embodiment, the difference from the electron beam generating device in the first embodiment is that the
請參照圖9,在第三實施形態中,伸縮部26(例如伸縮管)構成真空腔室2之本體部的一部分。更具體而言,伸縮部26係被配置在連結於真空腔室2之第一凸緣部58與連結於真空腔室2之第二凸緣部28之間,且將第一凸緣部
58與第二凸緣部28連接。因此,第一凸緣部58係能夠對著第二凸緣部28相對移動。
Referring to FIG. 9, in the third embodiment, the telescopic portion 26 (for example, a telescopic tube) constitutes a part of the body portion of the
若第一凸緣部58對著第二凸緣部28相對移動,則與第一凸緣部58一起移動的腔室內動力傳達構件5b也對著第二凸緣部28相對移動。結果,連結於腔室內動力傳達構件5b之光電陰極支撐具3相對於活性化容器4移動。
When the
在圖9記載之例中,腔室內動力傳達構件5b為軸。又,腔室內動力傳達構件5b與光電陰極支撐具3是被一體成型地製作的一個構件。取而代之地,亦可分別地製作腔室內動力傳達構件5b與光電陰極支撐具3,將兩者經由任意的結合構造來連結。
In the example shown in FIG. 9, the
在圖9記載之例中,腔室內動力傳達構件5b係被固著於真空腔室2的頂部(更具體而言是頂部的凸緣部21a)。取而代之地,腔室內動力傳達構件5b亦可被固著於真空腔室2的本體部20。
In the example shown in FIG. 9, the
接下來說明腔室外動力傳達構件5a與能量生成部7。在圖9記載之例中,腔室外動力傳達構件5a係包含連結於真空腔室2的第一凸緣部58。又,在圖9記載之例中,腔室外動力傳達構件5a係包含螺桿棒59。而且,在第一凸緣部58係設有用以與螺桿棒59螺合的螺桿孔58c。因此,
若使螺桿棒59繞螺桿棒的中心軸旋轉,則第一凸緣部58會直線地移動(例如於Z方向移動)。這樣一來,第一凸緣部58與第二凸緣部28之間的距離會變化,伸縮部26會伸縮。
Next, the
在圖9記載之例中,螺桿棒59係連接於能量生成部7。在圖9記載之例中,能量生成部7為手動操作構件7b。而且,若操作手動操作構件7b的操作旋鈕72,則螺桿棒59會繞螺桿棒的中心軸旋轉。另外,本體部20a也可以是電性絕緣構件。
In the example shown in FIG. 9, the
如圖9所示般,電子射線產生裝置1亦可具備引導第一凸緣部58之移動的導引構件580(例如導引棒)。在圖9記載之例中,導引構件580係被配置成貫通第一凸緣部58之貫通孔58d的方式。導引構件580的數量可以是一個,也可以是兩個以上。
As shown in FIG. 9, the electron
在第三實施形態中,真空腔室2包含伸縮部26。因此,藉由使真空腔室2的容積變化,能夠使真空腔室2內的腔室內動力傳達構件5b(以及光電陰極支撐具3)移動。另外,就算使真空腔室2的容積變化,真空腔室2內的真空度也不會惡化。
In the third embodiment, the
接下來對活性化容器4進行說明。在圖9記載之例中,
活性化容器4係經由支撐構件42而被安裝於真空腔室2。在圖9記載之例中,活性化容器4係藉由複數根支撐構件42而被懸吊支撐。
Next, the
活性化容器4係具備:第一孔44-1,係可供光電陰極材料A或從光電陰極材料A所釋放出的電子通過。又,活性化容器4係具備供腔室內動力傳達構件5b插通的第二孔44-2。在圖9記載之例中,第二孔44-2係被設於與第一孔44-1所設置的面為相反側的面。更具體而言,第一孔44-1係被設於活性化容器4的下表面,第二孔44-2係被設於活性化容器4的上表面。取而代之地,也可以像第二實施形態中的活性化容器般,第二孔44-2被設於活性化容器4的側面(參照圖7)。
The
在圖9記載之例中,活性化容器4經由支撐構件42而被支撐於真空腔室2。因此,比起第一實施形態中的活性化容器之尺寸,能夠把活性化容器4之尺寸設小。另外,支撐構件42較佳為從陽極82所配置之側的相反側支撐活性化容器4。換言之,較佳為活性化容器4被配置於支撐構件42與陽極82之間。藉由活性化容器4被配置在支撐構件42與陽極82之間,抑制從支撐構件42產生放電。
In the example shown in FIG. 9, the
第三實施形態係達到與第一實施形態相同樣的功效。 The third embodiment achieves the same effect as the first embodiment.
又,在包含第三實施形態的幾個實施形態中,在伸縮部26(例如伸縮管)構成真空腔室2之本體部的一部分的情形下,變得能夠僅單純地使伸縮部伸縮來使腔室內動力傳達構件5b移動。又,由於腔室內動力傳達構件5b的移動被限定為直線的移動的緣故,故能夠將動力傳達機構5簡單化。
In addition, in several embodiments including the third embodiment, when the telescopic portion 26 (for example, the telescopic tube) constitutes a part of the body portion of the
進一步地,在包含第三實施形態的幾個實施形態中,在活性化容器4經由支撐構件42而被安裝於真空腔室2的情形下,能夠將活性化容器4的容積設小。
Further, in several embodiments including the third embodiment, when the
又,在包含第三實施形態的幾個實施形態中,除了第一孔44-1以外,活性化容器4亦可具備供腔室內動力傳達構件5b插通的第二孔44-2。在此情形下,有表面處理材料B經由第二孔44-2而被釋放到活性化容器4之外的可能性。因此,亦可附加地將光電陰極支撐具3的外徑設大,藉此表面處理材料B不易從第二孔44-2被釋放出。
In addition, in some embodiments including the third embodiment, in addition to the first hole 44-1, the
另外,在第三實施形態中,已對動力傳達機構5將來自能量生成部7的驅動力傳達至光電陰極支撐具3的例子進行了說明。也可以取而代之地設成以下方式:動力傳達機構5將來自能量生成部7的驅動力傳達至活性化容器4。
In addition, in the third embodiment, the example in which the
又,在第三實施形態中已對能量生成部7為手動操作
構件7b的例子進行了說明。取而代之地,亦可設成藉由馬達或轉動致動器等來驅動操作旋鈕72等的方式。在此情形下,第三實施形態中的能量生成部7為驅動源7a。
Furthermore, in the third embodiment, the
(動力傳達機構的變化例1) (Change example 1 of power transmission mechanism)
在實施形態中的動力傳達機構5也可以是用以將腔室外動力傳達構件的振動變換成腔室內動力傳達構件的移動之動力傳達機構。在此情形下,使用超音波馬達等的振動源(驅動源)來作為能量生成部7即可。
The
(動力傳達機構的變化例2) (Change example 2 of power transmission mechanism)
在上述第一實施形態至第三實施形態以及動力傳達機構的變化例1中,已說明了腔室外動力傳達構件對腔室內動力傳達構件純機械性地傳達驅動力的例子。也可以取而代之地,將對腔室內動力傳達構件之驅動力的傳達的至少一部分以非機械性的方式進行。
In the above-described first to third embodiments and
在動力傳達機構的變化例2中以熱的方式進行對腔室內動力傳達構件之驅動力的傳達。例如,設想藉由形狀記憶合金來構成腔室內動力傳達構件的情形。在此情形下,藉由對腔室內動力傳達構件施加熱,能夠使由形狀記憶合金所構成的腔室內動力傳達構件伸縮。結果,連結於腔室內動力傳達構件的光電陰極支撐具3或活性化容器4會移動。這樣一來,光電陰極支撐具3會對著活性化容器4相
對移動。
In
另外,在動力傳達機構的變化例2中,能量生成部係藉由熱源所構成。而且,能量生成部(熱源)係生成將腔室內動力傳達構件予以驅動的熱能量。另外,熱源可以被配置於真空腔室內,也可以被配置於真空腔室外。
In addition, in
(動力傳達機構的變化例3) (Change example 3 of power transmission mechanism)
在上述第一實施形態至第三實施形態以及動力傳達機構的變化例1中,已說明了腔室外動力傳達構件對腔室內動力傳達構件純機械性地傳達驅動力的例子。又,在動力傳達機構的變化例2中,已說明了熱力學地對腔室內動力傳達構件傳達驅動力的例子。也可以取而代之地以磁性或電磁性的方式來進行對腔室內動力傳達構件之驅動力的傳達的至少一部分。
In the above-described first to third embodiments and
在變化例3中,被配置於真空腔室2外的腔室外動力傳達構件包含磁鐵,被配置於真空腔室內的腔室內動力傳達構件包含被磁鐵所拉引的強磁性材料。在此情形下,藉由使腔室外動力傳達構件移動,能夠使腔室內動力傳達構件移動。
In
另外,在動力傳達機構的變化例3中,以作為能量生成部7而言,可以採用用以由人力來使腔室外動力傳達構
件移動的手動操作構件,也可以採用用以由非人力來使腔室外動力傳達構件移動的驅動源。另外,在變化例3中,磁鐵係被配置於真空腔室2外。因此,磁鐵對於電子射線軌道的干涉係止於最小限度。
In addition, in
在上述實施形態以及變化例中已說明了各種動力傳達機構。但是,從盡可能地減少對由電子射線產生裝置1所生成的電子射線之軌道的影響之觀點來看以及從盡可能地正確地進行光電陰極支撐具3相對於活性化容器4的定位之觀點來看,動力傳達機構較佳為純機械性的動力傳達機構。換言之,較佳為腔室外動力傳達構件對腔室內動力傳達構件純機械性地傳達驅動力。在第三實施形態中,在真空區域內中,沒有以能夠相對移動地略接觸的方式被配置的構件。因此,與第一實施形態同樣地形成用以加熱表面處理材料B的電路、形成用以對加熱器通電之電路即可,其中該加熱器係用以加熱光電陰極。
Various power transmission mechanisms have been explained in the above-mentioned embodiments and modified examples. However, from the viewpoint of reducing the influence on the trajectory of the electron beam generated by the electron
(能夠於實施形態中採用之其他的構成) (Other structures that can be adopted in the embodiment)
參照圖10至圖12,對能夠在上述各實施形態中採用之其他的構成進行說明。 With reference to FIGS. 10 to 12, other configurations that can be adopted in the above embodiments will be described.
(加熱構造) (Heating structure)
參照圖10中的(a)以及圖10中的(b),對用以將表面處理材料B活性化的加熱構造進行說明。圖10中的(a)以及 圖10中的(b)係示意性地表示加熱構造之一例的圖。 The heating structure for activating the surface treatment material B will be described with reference to (a) in FIG. 10 and (b) in FIG. 10. (A) in Figure 10 and (B) in FIG. 10 is a diagram schematically showing an example of a heating structure.
加熱構造95係將表面處理材料B加熱而氣化。加熱構造95可以藉由加熱活性化容器4全體來間接地加熱被配置於內側的表面處理材料B,也可以僅直接加熱表面處理材料B。以作為前者的方法而言,可以舉出對活性化容器4配置電熱線圈等之加熱構造的方法,或使用電熱線圈、燈(lamp)加熱器等來加熱真空腔室2全體以將活性化容器4加熱的方法等。
The
又,如圖10中的(a)以及圖10中的(b)表示般,可舉出使用組合了加熱構造的表面處理材料B的方法來作為後者的方法。圖10中的(a)係表示在表面處理材料B之中組入了加熱構造95的例子。在圖10中的(a)記載之例中,於表面處理材料B的中心部插通有電熱線等的加熱構造95,且於表面處理材料B形成有長度方向的切口96。若對加熱構造95通電,則如圖10中的(b)表示般,切口96因加熱而變大,表面處理材料B的氣化氣體從變大的切口96被釋放出。此時,表面處理材料B的氣化氣體係從切口96具有指向性地被釋放出,故能夠將氣化氣體僅朝向光電陰極材料A的方向。
In addition, as shown in (a) and (b) of FIG. 10, a method using the surface treatment material B combined with a heating structure can be cited as the latter method. (A) in FIG. 10 shows an example in which the
(方向控制構造) (Direction control structure)
參照圖11,對用以控制已氣化之表面處理材料B(表面
處理材料B的氣化氣體)的飛散方向之方向控制構造97進行說明。圖11係示意性地表示方向控制構造97之一個例子的圖。
Referring to FIG. 11, the surface treatment material B (surface
The
在圖11記載之例中,將兩片方向控制板98以包夾表面處理材料B的方式配置。而且,將已氣化之表面處理材料B飛散的角度設成相對於連結第一孔44-1之端部的面能夠以大於0度小於90度的角度調整的方式。另外,方向控制板98的數量並非被限定於兩片。方向控制板98的數量可以是一片,也可以是三片以上。
In the example shown in FIG. 11, two
(電極的配置) (Configuration of electrode)
參照圖12對電極的配置之一例進行說明。圖12係示意性地表示電極的配置之一例的圖。 An example of the arrangement of electrodes will be described with reference to FIG. 12. 12 is a diagram schematically showing an example of the arrangement of electrodes.
在上述實施形態中,對光電陰極為負、陽極82為正的兩極構造之例進行了說明。也可以取而代之地如圖12所示般,藉由以導電性材料形成活性化容器4,且在光電陰極支撐具3不接觸於活性化容器4的狀態下使用,藉此作為三極構造來使用。在使用三極構造的情形下,將光電陰極之電壓VA與活性化容器4之電壓VB設成VA≠VB,VA與VB皆為0V以下即可。
In the above embodiment, an example of the bipolar structure in which the photocathode is negative and the
(EA表面處理方法) (EA surface treatment method)
對實施形態中被配置於電子射線產生裝置1內的光電陰極材料A之EA表面處理方法的一例進行說明。EA表面處理方法例如以接下來的(1)至(3)的順序所執行。另外,在EA表面處理時,光電陰極支撐具3與活性化容器4的相對位置關係例如被設定成在圖3中所示的位置關係、在圖7中所示的位置關係或是在圖9中所示的位置關係。
An example of the EA surface treatment method of the photocathode material A disposed in the electron
(1)將支撐有光電陰極材料A的光電陰極支撐具3在真空中加熱300℃至700℃且10分至1小時,將氧化物或碳化物等的表面雜質去除並清淨。加熱溫度以及時間係因應所使用的光電陰極材料而被適宜調整。藉此,能夠在光電陰極材料A使能帶彎折產生,將真空位準下降用以形成光電陰極之半導體的能帶隙的一半左右(φ B)。
(1) The
(2)蒸鍍表面處理材料B,俾使能在光電陰極材料A的結晶表面得到微小的光電流。之後,每當光電流飽和就將表面處理材料B之蒸鍍與因應需求的氧、NF3、N2等的氣體附加交互地重複進行,直到得到最大的光電流為止。藉由該方法,將殘餘的真空位準(φ D)降低,藉此能夠形成EA表面狀態。氣體的附加例如藉由將從氣體供給裝置92所供給的氣體噴附到光電陰極材料A的方式來進行。另外,在將複數種類的表面處理材料B例如Cs以及Te、Cs以及Sb等蒸鍍於光電陰極材料A的情形下,氣體之附加並非必要。
(2) The surface treatment material B is vapor-deposited so that a minute photocurrent can be obtained on the crystal surface of the photocathode material A. After that, whenever the photocurrent is saturated, the vapor deposition of the surface treatment material B and the gas such as oxygen, NF 3 , N 2, etc. according to the demand are alternately repeated until the maximum photocurrent is obtained. By this method, the residual vacuum level (φ D) is reduced, whereby the EA surface state can be formed. The gas is added, for example, by spraying the gas supplied from the
(3)進行一定時間的電子的釋放後,藉由進行上述(2) 的順序來進行EA表面之再處理。 (3) After releasing electrons for a certain period of time, by performing the above (2) EA surface reprocessing.
(電子射線應用裝置) (Electron ray application device)
參照圖13對電子射線應用裝置100進行說明。圖13係電子射線應用裝置100的功能方塊圖。
The electron
電子射線應用裝置100係使藉由電子射線產生裝置1所生成的電子朝所希望的方向飛翔的裝置。電子射線應用裝置100可以是向著目標照射電子的裝置。
The electron
電子射線應用裝置100係包含電子射線產生裝置1。電子射線應用裝置100例如是電子槍、自由電子雷射加速器、穿透型電子顯微鏡或掃描型電子顯微鏡等的電子顯微鏡、電子射線全像攝影裝置、電子射線描繪裝置、電子射線繞射裝置、電子射線檢查裝置、電子射線金屬積層造型裝置(3D印表機(printer))、電子射線微影法裝置、其他的電子射線加工裝置(架橋、聚合、沉積(deposition)、蝕刻(etching)、表面改質(surface modification)等)、電子射線硬化裝置、電子射線滅菌裝置、電子射線殺菌裝置、電漿產生裝置、原子狀元素(自由基(radical))產生裝置、自旋極化電子射線產生裝置、分析裝置(陰極發光裝置、逆光電子分光裝置)等。在上述各裝置中,對於電子射線產生裝置1以外之構成採用公知或周知的構成即可。因此,省略對各裝置的說明。
The electron
本發明並非限定於上述各實施形態,在本發明之技術思想的範圍內,各實施形態自可適宜變化或變更。又,能夠將在各實施形態、各構成例、各變化例中所使用的任意構成要件與其他實施形態組合,且能夠省略各實施形態中的任意之構成要件。 The present invention is not limited to the above-mentioned embodiments, and each embodiment can be appropriately changed or modified within the scope of the technical idea of the present invention. In addition, any constituent elements used in each embodiment, each configuration example, and each modification example can be combined with other embodiments, and any constituent elements in each embodiment can be omitted.
(產業可利用性) (Industry availability)
使用本發明之電子射線產生裝置以及電子射線應用裝置可使維護變得容易。因此,對製造電子射線產生裝置以及電子射線應用裝置的業者、使用電子射線產生裝置以及電子射線應用裝置來處理電子射線的業者來說是有用的。 The use of the electron beam generating device and the electron beam application device of the present invention can facilitate maintenance. Therefore, it is useful for a manufacturer who manufactures an electron ray generation device and an electron ray application device, and a manufacturer who uses an electron ray generation device and an electron ray application device to process electron rays.
1‧‧‧電子射線產生裝置 1‧‧‧ Electron ray generator
2‧‧‧真空腔室 2‧‧‧Vacuum chamber
3‧‧‧光電陰極支撐具 3‧‧‧Photocathode support
3a‧‧‧背面 3a‧‧‧Back
4‧‧‧活性化容器 4‧‧‧Activated container
5‧‧‧動力傳達機構 5‧‧‧Power transmission mechanism
5a‧‧‧腔室外動力傳達構件 5a‧‧‧Outdoor power transmission member
5b‧‧‧腔室內動力傳達構件 5b‧‧‧Power transmission member in the chamber
7‧‧‧能量生成部 7‧‧‧Energy Generation Department
7a‧‧‧驅動源 7a‧‧‧Drive source
20‧‧‧本體部 20‧‧‧Body
21‧‧‧頂部 21‧‧‧Top
21a‧‧‧凸緣部 21a‧‧‧Flange
22‧‧‧伸縮部 22‧‧‧Telescopic Department
24‧‧‧無孔壁 24‧‧‧No hole wall
30‧‧‧電性絕緣構件 30‧‧‧Electrical insulating member
44-1‧‧‧第一孔 44-1‧‧‧First hole
45‧‧‧孔 45‧‧‧ hole
52‧‧‧導引構件 52‧‧‧Guiding member
80‧‧‧光源 80‧‧‧Light source
81‧‧‧光透過窗 81‧‧‧light through the window
82‧‧‧陽極 82‧‧‧Anode
83‧‧‧電源部 83‧‧‧Power Department
91‧‧‧真空泵 91‧‧‧Vacuum pump
92‧‧‧氣體供給裝置 92‧‧‧Gas supply device
A‧‧‧光電陰極材料 A‧‧‧Photocathode material
AX1‧‧‧中心軸 AX1‧‧‧Central axis
B‧‧‧表面處理材料 B‧‧‧Surface treatment materials
Z‧‧‧方向 Z‧‧‧ direction
Claims (14)
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JPH09298032A (en) * | 1996-04-30 | 1997-11-18 | Hamamatsu Photonics Kk | Electron beam generating device |
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JP2015022810A (en) * | 2013-07-16 | 2015-02-02 | 国立大学法人名古屋大学 | Activation container and kit used for reduction processing device for electron affinity, reduction processing device for electron affinity with the kit, photocathode electron beam source, electron gun with photo cathode electron beam source, free electron laser accelerator, transmission electron microscope, scanning electron microscope, electron beam holography microscope, electron beam lithography device, electron beam diffraction device and electron beam inspection device |
TW201506390A (en) * | 2005-02-17 | 2015-02-16 | Ebara Corp | Electron beam device |
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JPH09298032A (en) * | 1996-04-30 | 1997-11-18 | Hamamatsu Photonics Kk | Electron beam generating device |
WO2002001597A1 (en) | 2000-06-27 | 2002-01-03 | Ebara Corporation | Charged particle beam inspection apparatus and method for fabricating device using that inspection apparatus |
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