TWI692089B - Display device - Google Patents
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- TWI692089B TWI692089B TW108112390A TW108112390A TWI692089B TW I692089 B TWI692089 B TW I692089B TW 108112390 A TW108112390 A TW 108112390A TW 108112390 A TW108112390 A TW 108112390A TW I692089 B TWI692089 B TW I692089B
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Abstract
Description
本發明是有關於一種顯示裝置,且特別是有關於一種資料線重疊於畫素電極之間的間隙的顯示裝置。The present invention relates to a display device, and particularly to a display device in which a data line overlaps a gap between pixel electrodes.
隨著科技進步,曲面顯示裝置的應用越來越廣泛。舉例而言,曲面顯示裝置已廣泛被應用在手機、穿戴式裝置、電視中。生活中經常使用的電子裝置都能加設曲面顯示裝置,這也代表著曲面顯示裝置的市場潛力大。With the advancement of technology, the application of curved display devices is becoming more and more widespread. For example, curved display devices have been widely used in mobile phones, wearable devices, and televisions. Curved display devices can be added to electronic devices that are often used in life, which also represents a large market potential for curved display devices.
一般而言,液晶顯示裝置中會設置有黑矩陣(Black matrix, BM)。黑矩陣被用來遮擋液晶排列較差的部分,藉此可以避免液晶顯示裝置漏光。目前,常藉由彎折液晶顯示裝置來製造曲面顯示裝置。然而,在彎折液晶顯示裝置的過程中,黑矩陣時常會偏離欲遮擋的位置,容易導致彎折後的液晶顯示裝置(即曲面顯示裝置)漏光。Generally speaking, a black matrix (BM) is provided in the liquid crystal display device. The black matrix is used to block the poorly arranged part of the liquid crystal, thereby avoiding light leakage of the liquid crystal display device. Currently, curved display devices are often manufactured by bending liquid crystal display devices. However, in the process of bending the liquid crystal display device, the black matrix often deviates from the position to be blocked, which may easily cause light leakage of the bent liquid crystal display device (ie, curved display device).
本發明提供一種顯示裝置,能改善彎折後產生的漏光問題。The invention provides a display device which can improve the light leakage problem after bending.
本發明的至少一實施例提供一種顯示裝置,包括第一基板、第一主動元件、第二主動元件、第一資料線、色彩轉換層、保護層、平坦層、遮蔽電極、第一畫素電極、第二畫素電極、第二基板以及顯示介質層。第一主動元件與第二主動元件位於第一基板上。第一資料線位於第一主動元件與第二主動元件之間。色彩轉換層位於第一主動元件與第二主動元件上。色彩轉換層具有第一開口以及第二開口。第一開口以及第二開口的位置分別對應第一主動元件的汲極與第二主動元件的汲極。保護層位於色彩轉換層上。平坦層位於保護層上。遮蔽電極位於保護層與平坦層之間。遮蔽電極具有第一通孔以及第二通孔。第一通孔以及第二通孔的位置分別對應第一開口與第二開口。第一畫素電極與第二畫素電極位於平坦層上。第一畫素電極與第二畫素電極分別電性連接第一主動元件與第二主動元件。第一畫素電極與第二畫素電極之間具有間隙。第一資料線重疊於間隙、部分第一畫素電極以及部分第二畫素電極。遮蔽電極重疊於第一畫素電極、第二畫素電極、第一資料線以及間隙。遮蔽電極遮蔽間隙。第二基板面對第一基板。顯示介質層位於第一基板與第二基板之間。At least one embodiment of the present invention provides a display device including a first substrate, a first active element, a second active element, a first data line, a color conversion layer, a protective layer, a flat layer, a shielding electrode, and a first pixel electrode , A second pixel electrode, a second substrate and a display medium layer. The first active element and the second active element are located on the first substrate. The first data line is located between the first active component and the second active component. The color conversion layer is located on the first active device and the second active device. The color conversion layer has a first opening and a second opening. The positions of the first opening and the second opening correspond to the drain of the first active element and the drain of the second active element, respectively. The protective layer is located on the color conversion layer. The flat layer is on the protective layer. The shielding electrode is located between the protective layer and the flat layer. The shielding electrode has a first through hole and a second through hole. The positions of the first through hole and the second through hole correspond to the first opening and the second opening, respectively. The first pixel electrode and the second pixel electrode are located on the flat layer. The first pixel electrode and the second pixel electrode are electrically connected to the first active element and the second active element, respectively. There is a gap between the first pixel electrode and the second pixel electrode. The first data line overlaps the gap, part of the first pixel electrode and part of the second pixel electrode. The shielding electrode overlaps the first pixel electrode, the second pixel electrode, the first data line and the gap. The shielding electrode shields the gap. The second substrate faces the first substrate. The display medium layer is located between the first substrate and the second substrate.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.
圖1A是依照本發明的一實施例的一種顯示裝置的上視示意圖。圖1B是沿著圖1A線aa’的剖面示意圖。圖1C是沿著圖1A線bb’的剖面示意圖。為了方便說明,圖1A省略繪示了圖1B以及圖1C中的部分構件。FIG. 1A is a schematic top view of a display device according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along line aa' of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along line bb' of Fig. 1A. For convenience of description, FIG. 1A omits the drawing of some components in FIGS. 1B and 1C.
請參考圖1A至圖1C,顯示裝置10包括第一基板SB1、第一主動元件T1、第二主動元件T2、第一資料線DL1、色彩轉換層CF、保護層PV2、絕緣層U、遮蔽電極SE、第一畫素電極PE1、第二畫素電極PE2、第二基板SB2以及顯示介質層M。在本實施例中,顯示裝置10還包括第一偏光片PL1、第二偏光片PL2、黑矩陣BM、保護層PV1、導線CL、第一掃描線SL1、第二掃描線SL2、第二資料線DL2、第三主動元件T3、第四主動元件T4、第三畫素電極PE3、第四畫素電極PE4、第一配向層AL1、第二配向層AL2、共用電極CE、覆蓋層OC以及間隙物PS。1A to 1C, the
第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4位於第一基板SB1上。第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4各自包括通道層AS、閘極G、源極S與汲極D。The first active element T1, the second active element T2, the third active element T3, and the fourth active element T4 are located on the first substrate SB1. The first active element T1, the second active element T2, the third active element T3, and the fourth active element T4 each include a channel layer AS, a gate G, a source S, and a drain D.
閘極G、第一掃描線SL1、第二掃描線SL2以及導線CL位於基板SB1上,在本實施例中,閘極G、第一掃描線SL1、第二掃描線SL2以及導線CL屬於同一導電膜層。閘極G電性連接至對應的掃描線,舉例來說,第一主動元件T1的閘極G與第二主動元件T2的閘極G電性連接至第一掃描線SL1,且第三主動元件T3的閘極G與第四主動元件T4的閘極G電性連接至第二掃描線SL2。The gate G, the first scan line SL1, the second scan line SL2, and the conductive line CL are located on the substrate SB1. In this embodiment, the gate G, the first scan line SL1, the second scan line SL2, and the conductive line CL belong to the same conductivity膜层。 Film layer. The gate G is electrically connected to the corresponding scan line. For example, the gate G of the first active element T1 and the gate G of the second active element T2 are electrically connected to the first scan line SL1, and the third active element The gate G of T3 and the gate G of the fourth active element T4 are electrically connected to the second scan line SL2.
通道層AS重疊於對應的閘極G,且通道層AS與閘極G之間夾有閘絕緣層GI。The channel layer AS overlaps the corresponding gate G, and a gate insulating layer GI is sandwiched between the channel layer AS and the gate G.
源極S與汲極D位於對應的通道層AS上,且源極S與汲極D電性連接至對應的通道層AS。第一資料線DL1與第二資料線DL2位於閘絕緣層GI上,且第一資料線DL1與第二資料線DL2電性連接至對應的源極S,舉例來說,第一資料線DL1電性連接至第一主動元件T1的源極S以及第三主動元件T3的源極S,且第二資料線DL2電性連接至第二主動元件T2的源極S以及第四主動元件T4的源極S。第一資料線DL1位於第一主動元件T1與第二主動元件T2之間。在本實施例中,第一資料線DL1與第二資料線DL2皆包括相連的第一部分X1以及第二部分X2。第二部分X2的寬度W大於第一部分X1的寬度y。第一部分X1的位置例如對應於第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4,藉此,第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4可以有較大的佈局空間。The source S and the drain D are located on the corresponding channel layer AS, and the source S and the drain D are electrically connected to the corresponding channel layer AS. The first data line DL1 and the second data line DL2 are located on the gate insulating layer GI, and the first data line DL1 and the second data line DL2 are electrically connected to the corresponding source electrode S. For example, the first data line DL1 is electrically Is electrically connected to the source S of the first active device T1 and the source S of the third active device T3, and the second data line DL2 is electrically connected to the source S of the second active device T2 and the source of the fourth active device T4极S. The first data line DL1 is located between the first active element T1 and the second active element T2. In this embodiment, both the first data line DL1 and the second data line DL2 include a connected first portion X1 and a second portion X2. The width W of the second portion X2 is greater than the width y of the first portion X1. The position of the first part X1 corresponds to, for example, the first active element T1, the second active element T2, the third active element T3, and the fourth active element T4, whereby the first active element T1, the second active element T2, the third active element The element T3 and the fourth active element T4 can have a larger layout space.
保護層PV1覆蓋源極S、汲極D、第一資料線DL1、第二資料線DL2與閘絕緣層GI。The protective layer PV1 covers the source electrode S, the drain electrode D, the first data line DL1, the second data line DL2 and the gate insulating layer GI.
色彩轉換層CF位於保護層PV1上,在本實施例中,色彩轉換層CF位於第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4上。舉例來說,色彩轉換層CF為彩色濾光層,且顯示裝置10具有彩色濾光層於畫素陣列上(color filter on array, COA)之結構。色彩轉換層CF例如包括紅色色彩轉換層、綠色色彩轉換層以及藍色色彩轉換層,且不同顏色的色彩轉換層交錯設置。The color conversion layer CF is located on the protective layer PV1. In this embodiment, the color conversion layer CF is located on the first active element T1, the second active element T2, the third active element T3, and the fourth active element T4. For example, the color conversion layer CF is a color filter layer, and the
色彩轉換層CF具有第一開口O1、第二開口O2、第三開口O3以及第四開口O4。第一開口O1、第二開口O2、第三開口O3以及第四開口O4的位置分別對應第一主動元件T1的汲極D、第二主動元件T2的汲極D、第三主動元件T3的汲極D以及第四主動元件T4的汲極D。The color conversion layer CF has a first opening O1, a second opening O2, a third opening O3, and a fourth opening O4. The positions of the first opening O1, the second opening O2, the third opening O3, and the fourth opening O4 respectively correspond to the drain D of the first active element T1, the drain D of the second active element T2, and the drain of the third active element T3 The pole D and the drain D of the fourth active element T4.
保護層PV2位於色彩轉換層CF上。遮蔽電極SE位於保護層PV2上。平坦層U位於遮蔽電極SE以及保護層PV2上。換句話說,遮蔽電極SE位於保護層PV2與平坦層U之間。遮蔽電極SE具有第一通孔TH1、第二通孔TH2、第三通孔TH3以及第四通孔TH4。第一通孔TH1、第二通孔TH2、第三通孔TH3以及第四通孔TH4的位置分別對應第一開口O1、第二開口O2、第三開口O3以及第四開口O4。The protective layer PV2 is located on the color conversion layer CF. The shielding electrode SE is located on the protective layer PV2. The flat layer U is located on the shielding electrode SE and the protective layer PV2. In other words, the shield electrode SE is located between the protective layer PV2 and the flat layer U. The shield electrode SE has a first through hole TH1, a second through hole TH2, a third through hole TH3, and a fourth through hole TH4. The positions of the first through hole TH1, the second through hole TH2, the third through hole TH3, and the fourth through hole TH4 correspond to the first opening O1, the second opening O2, the third opening O3, and the fourth opening O4, respectively.
遮蔽電極SE具有第一開孔C1、第二開孔C2、第三開孔C3以及第四開孔C4。第一開孔C1、第二開孔C2、第三開孔C3以及第四開孔C4的位置及大小分別對應第一主動元件T1的通道層AS、第二主動元件T2的通道層AS、第三主動元件T3的通道層AS以及第四主動元件T4的通道層AS。在本實施例中,遮蔽電極SE不重疊於第一主動元件T1的通道層AS、第二主動元件T2的通道層AS、第三主動元件T3的通道層AS以及第四主動元件T4的通道層AS,藉此避免遮蔽電極SE上的電場影響第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4的運作。在其他實施例中,遮蔽電極SE亦可以不具有第一開孔C1、第二開孔C2、第三開孔C3以及第四開孔C4。The shielding electrode SE has a first opening C1, a second opening C2, a third opening C3, and a fourth opening C4. The positions and sizes of the first opening C1, the second opening C2, the third opening C3, and the fourth opening C4 correspond to the channel layer AS of the first active element T1, the channel layer AS of the second active element T2, the first The channel layer AS of the three active elements T3 and the channel layer AS of the fourth active element T4. In this embodiment, the shielding electrode SE does not overlap the channel layer AS of the first active element T1, the channel layer AS of the second active element T2, the channel layer AS of the third active element T3, and the channel layer of the fourth active element T4 AS, thereby preventing the electric field on the shielding electrode SE from affecting the operation of the first active element T1, the second active element T2, the third active element T3, and the fourth active element T4. In other embodiments, the shielding electrode SE may not have the first opening C1, the second opening C2, the third opening C3, and the fourth opening C4.
平坦層U例如是感光壓克力樹脂或其他有機絕緣材料,但本發明不以此為限。平坦層U的厚度例如為1微米至4微米。平坦層U能使顯示裝置10的開口率與亮度提高。在本實施例中,平坦層U填入第一開口O1、第二開口O2、第三開口O3以及第四開口O4中,且具有分別對應第一開口O1、第二開口O2、第三開口O3以及第四開口O4的多個開口。換句話說,平坦層U露出位於第一開口O1、第二開口O2、第三開口O3以及第四開口O4底部的汲極D。The flat layer U is, for example, photosensitive acrylic resin or other organic insulating materials, but the invention is not limited thereto. The thickness of the flat layer U is, for example, 1 micrometer to 4 micrometers. The flat layer U can improve the aperture ratio and brightness of the
第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3與第四畫素電極PE4位於平坦層U上。The first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3 and the fourth pixel electrode PE4 are located on the flat layer U.
第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3與第四畫素電極PE4分別電性連接第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4。第一畫素電極PE1與第二畫素電極PE2之間以及第三畫素電極PE3與第四畫素電極PE4之間具有間隙GP。第一資料線DL1重疊於間隙GP、部分第一畫素電極PE1、部分第二畫素電極PE2、部分第三畫素電極PE3以及部分第四畫素電極PE4。舉例來說,第一資料線DL1的第二部分X2重疊於間隙GP、部分第一畫素電極PE1、部分第二畫素電極PE2、部分第三畫素電極PE3以及部分第四畫素電極PE4。The first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3 and the fourth pixel electrode PE4 are electrically connected to the first active element T1, the second active element T2, the third active element T3 and the first Four active components T4. There is a gap GP between the first pixel electrode PE1 and the second pixel electrode PE2 and between the third pixel electrode PE3 and the fourth pixel electrode PE4. The first data line DL1 overlaps the gap GP, part of the first pixel electrode PE1, part of the second pixel electrode PE2, part of the third pixel electrode PE3, and part of the fourth pixel electrode PE4. For example, the second portion X2 of the first data line DL1 overlaps the gap GP, part of the first pixel electrode PE1, part of the second pixel electrode PE2, part of the third pixel electrode PE3, and part of the fourth pixel electrode PE4 .
遮蔽電極SE重疊於第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3、第四畫素電極PE4、第一資料線DL1、第二資料線DL2以及間隙GP,且遮蔽電極SE遮蔽間隙GP。遮蔽電極SE可以降低第一資料線DL1以及第二資料線DL2上之電場對第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3以及第四畫素電極PE4所產生的影響。此外,遮蔽電極SE具有改善取向極化問題、提升儲存電容以及減少寄生電容等效果。The shielding electrode SE overlaps the first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3, the fourth pixel electrode PE4, the first data line DL1, the second data line DL2 and the gap GP, and shields The electrode SE shields the gap GP. The shielding electrode SE can reduce the electric field generated by the first data line DL1 and the second data line DL2 on the first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3, and the fourth pixel electrode PE4 influences. In addition, the shielding electrode SE has the effects of improving the orientation polarization problem, increasing the storage capacitance, and reducing the parasitic capacitance.
第一配向層AL1位於第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3以及第四畫素電極PE4上。第一配向層AL1具有第一配向方向。The first alignment layer AL1 is located on the first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3, and the fourth pixel electrode PE4. The first alignment layer AL1 has a first alignment direction.
第二基板SB2面對第一基板SB1。黑矩陣BM、覆蓋層OC、共用電極CE以及第二配向層AL2位於第二基板SB2上。黑矩陣BM重疊於第一掃描線SL1、第二掃描線SL2、第一主動元件T1、第二主動元件T2、第三主動元件T3、第四主動元件T4以及導線CL。黑矩陣BM具有對應第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3以及第四畫素電極PE4的開口。在本實施例中,第一畫素電極PE1與第二畫素電極PE2之間以及第三畫素電極PE3與第四畫素電極PE4之間的間隙GP沒有重疊於黑矩陣BM。The second substrate SB2 faces the first substrate SB1. The black matrix BM, the cover layer OC, the common electrode CE, and the second alignment layer AL2 are located on the second substrate SB2. The black matrix BM overlaps the first scan line SL1, the second scan line SL2, the first active element T1, the second active element T2, the third active element T3, the fourth active element T4, and the conductive line CL. The black matrix BM has openings corresponding to the first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3, and the fourth pixel electrode PE4. In this embodiment, the gap GP between the first pixel electrode PE1 and the second pixel electrode PE2 and between the third pixel electrode PE3 and the fourth pixel electrode PE4 does not overlap the black matrix BM.
覆蓋層OC位於黑矩陣BM上。共用電極CE位於覆蓋層OC上。在本實施例中,共用電極CE與遮蔽電極SE電性連接至相同的電壓,藉此進一步提升遮蔽電極SE的遮蔽效果,但本發明不以此為限。由於重疊於間隙GP的遮蔽電極SE與共用電極CE電性連接至相同的電壓,間隙GP周圍的液晶分子不容易受到第一資料線DL1電壓轉換的影響。但在黑畫面下,間隙GP周圍的液晶分子因感受的電壓差為0,所以呈透光狀態,光線可由間隙GP下方之第一資料線DL1遮蔽。The cover layer OC is located on the black matrix BM. The common electrode CE is located on the cover layer OC. In this embodiment, the common electrode CE and the shielding electrode SE are electrically connected to the same voltage, thereby further improving the shielding effect of the shielding electrode SE, but the invention is not limited thereto. Since the shield electrode SE and the common electrode CE overlapping the gap GP are electrically connected to the same voltage, the liquid crystal molecules around the gap GP are not easily affected by the voltage conversion of the first data line DL1. However, under the black screen, the liquid crystal molecules around the gap GP are in a light-transmitting state because the voltage difference sensed is zero, and the light can be blocked by the first data line DL1 below the gap GP.
第二配向層AL2位於共用電極CE上。第二配向層AL2具有第二配向方向。在本實施例中,第二配向層AL2的第二配向方向與第一配向層AL1的第一配向方向互相正交。第一配向層AL1與第二配向層AL2例如藉由摩擦(Rubbing)製程來進行配向。在本實施例中,第一基板SB1上更具有第一偏光片PL1,第一偏光片PL1的吸收軸垂直於第一配向層AL1的第一配向方向。在本實施例中,第二基板SB2上更具有第二偏光片PL2,第二偏光片PL2的吸收軸垂直於第二配向層AL2的第二配向方向。換句話說,本實施例中的顯示裝置10為扭曲向列型(twisted nematic, TN)液晶顯示裝置。在一些實施例中,第一基板SB1與第二基板SB2上還分別具有吸收軸彼此正交的兩個偏光片,但本發明不以此為限。The second alignment layer AL2 is located on the common electrode CE. The second alignment layer AL2 has a second alignment direction. In this embodiment, the second alignment direction of the second alignment layer AL2 and the first alignment direction of the first alignment layer AL1 are orthogonal to each other. The first alignment layer AL1 and the second alignment layer AL2 are aligned by a rubbing process, for example. In this embodiment, the first substrate SB1 further has a first polarizer PL1, and the absorption axis of the first polarizer PL1 is perpendicular to the first alignment direction of the first alignment layer AL1. In this embodiment, the second substrate SB2 further has a second polarizer PL2, and the absorption axis of the second polarizer PL2 is perpendicular to the second alignment direction of the second alignment layer AL2. In other words, the
顯示介質層M位於第一基板SB1與第二基板SB2之間。舉例來說,顯示介質層M位於第一配向層AL1與第二配向層AL2之間。顯示介質層M中例如包括液晶分子。在本實施例中,未對顯示介質層M施加電場時,液晶分子呈螺旋狀排列,並可使光線離開顯示裝置10。若通電後液晶分子漸漸往垂直方向排列,此時偏振光無法通過第二基板SB2上的第二偏光片PL2,並呈現黑畫面。The display medium layer M is located between the first substrate SB1 and the second substrate SB2. For example, the display medium layer M is located between the first alignment layer AL1 and the second alignment layer AL2. The display medium layer M includes, for example, liquid crystal molecules. In this embodiment, when an electric field is not applied to the display medium layer M, the liquid crystal molecules are arranged in a spiral shape, and light can leave the
間隙物PS位於第一基板SB1與第二基板SB2之間。舉例來說,間隙物PS位於第一配向層AL1與第二配向層AL2之間。間隙物PS可以用來維持顯示介質層M的厚度(或稱液晶盒間隙)。在本實施例中,間隙物PS重疊於第一主動元件T1、第二主動元件T2、第三主動元件T3以及第四主動元件T4,藉此,間隙物PS可以較佳的控制顯示介質層M的厚度。在一些實施例中,間隙物PS形成於第一基板SB1上,且是以光學間隙物形成於陣列上(photo spacer on array,POA)的製程來製做,藉此,顯示裝置10有較高的開口率,但本發明不以此為限。在其他實施例中,間隙物PS形成於第二基板SB2上。The spacer PS is located between the first substrate SB1 and the second substrate SB2. For example, the spacer PS is located between the first alignment layer AL1 and the second alignment layer AL2. The spacer PS can be used to maintain the thickness of the display medium layer M (or cell gap). In this embodiment, the spacer PS overlaps the first active element T1, the second active element T2, the third active element T3, and the fourth active element T4, whereby the spacer PS can better control the display medium layer M thickness of. In some embodiments, the spacer PS is formed on the first substrate SB1 and is made by a process of forming a photo spacer on array (POA), thereby the
在一些實施例中,彎折顯示裝置10以獲得曲面顯示裝置。舉例來說,曲面顯示裝置的彎折軸例如平行於第一資料線DL1以及第二資料線DL2的延伸方向。在彎折顯示裝置10後,由於黑矩陣BM與畫素電極(例如第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3與第四畫素電極PE4)之間的間距大,部分間隙GP容易在顯示裝置10被彎折以後偏離黑矩陣BM,也可以說部分間隙GP容易在垂直黑矩陣BM的方向上不與黑矩陣BM重疊。舉例來說,黑矩陣BM沿著第一掃描線SL1以及第二掃描線SL2的延伸方向偏離間隙GP。然而,由於第一資料線DL1重疊於間隙GP、部分第一畫素電極PE1以及部分第二畫素電極PE2,即使部分黑矩陣BM偏離間隙GP,依然可以藉由第一資料線DL1遮蔽間隙GP,藉此避免顯示裝置10的漏光問題。In some embodiments, the
在本實施例中,第一資料線DL1與畫素電極(例如第一畫素電極PE1、第二畫素電極PE2、第三畫素電極PE3與第四畫素電極PE4)之間具有垂直距離H。第一資料線DL1具有寬度W,H/W<23%。在本實施例中,第一畫素電極PE1與第二畫素電極PE2之間(或第三畫素電極PE3與第四畫素電極PE4之間)的間隙GP的寬度Z小於或等於寬度W。顯示介質層M的厚度LH與第一資料線DL1的寬度W的比值小於0.21。In this embodiment, there is a vertical distance between the first data line DL1 and the pixel electrodes (for example, the first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3 and the fourth pixel electrode PE4) H. The first data line DL1 has a width W, H/W<23%. In this embodiment, the width Z of the gap GP between the first pixel electrode PE1 and the second pixel electrode PE2 (or between the third pixel electrode PE3 and the fourth pixel electrode PE4) is less than or equal to the width W . The ratio of the thickness LH of the display medium layer M to the width W of the first data line DL1 is less than 0.21.
圖2是依照本發明的一些實施例的顯示裝置之視角亮度模擬圖。舉例來說,圖2中每條曲線所代表的顯示裝置之結構皆類似於圖1A的顯示裝置10,然而圖2中每條曲線所代表的顯示裝置之第一資料線DL1的寬度W各不相同。2 is a simulation diagram of viewing angle brightness of a display device according to some embodiments of the present invention. For example, the structure of the display device represented by each curve in FIG. 2 is similar to the
圖2的縱軸代表的是對應視角之亮度與正視視角(0度)之亮度的比值再除以50。舉例來說,當視角為0度時(即正視視角時),前述比值為1且於圖2縱軸對應的數值為1除以50(即0.02)。當60度視角與正視視角的比值小於150時(即縱軸小於圖2中的3),顯示裝置具有較佳的觀看品質。The vertical axis of FIG. 2 represents the ratio of the brightness of the corresponding viewing angle to the brightness of the front viewing angle (0 degrees) divided by 50. For example, when the viewing angle is 0 degrees (that is, the front viewing angle), the aforementioned ratio is 1 and the value corresponding to the vertical axis of FIG. 2 is 1 divided by 50 (that is, 0.02). When the ratio of the 60-degree viewing angle to the front viewing angle is less than 150 (that is, the vertical axis is less than 3 in FIG. 2), the display device has better viewing quality.
請參考圖2,當第一資料線DL1的寬度W大於14微米時,縱軸的數值小於3,顯示裝置具有較佳的觀看品質。Please refer to FIG. 2, when the width W of the first data line DL1 is greater than 14 μm, the value of the vertical axis is less than 3, and the display device has better viewing quality.
綜上所述,在本發明的顯示裝置中,即使部分間隙偏離黑矩陣,依然可以避免顯示裝置的漏光問題。In summary, in the display device of the present invention, even if a part of the gap deviates from the black matrix, the light leakage problem of the display device can still be avoided.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.
10:顯示裝置 AS:通道層 AL1:第一配向層 AL2:第二配向層 BM:黑矩陣 C1:第一開孔 C2:第二開孔 C3:第三開孔 C4:第四開孔 CE:共用電極 CF:色彩轉換層 CL:導線 D:汲極 DL1:第一資料線 DL2:第二資料線 G:閘極 GI:閘絕緣層 GP:間隙 H:垂直距離 LH:厚度 M:顯示介質層 O1:第一開口 O2:第二開口 O3:第三開口 O4:第四開口 OC:覆蓋層 PE1:第一畫素電極 PE2:第二畫素電極 PE3:第三畫素電極 PE4:第四畫素電極 PL1:第一偏光片 PL2:第二偏光片 PS:間隙物 PV1、PV2:保護層 S:源極 SB1:第一基板 SB2:第二基板 SE:遮蔽電極 SL1:第一掃描線 SL2:第二掃描線 T1:第一主動元件 T2:第二主動元件 T3:第三主動元件 T4:第四主動元件 TH1:第一通孔 TH2:第二通孔 TH3:第三通孔 TH4:第四通孔 U:絕緣層 W、y、Z:寬度 X1:第一部分 X2:第二部分 10: display device AS: channel layer AL1: the first alignment layer AL2: second alignment layer BM: Black matrix C1: the first opening C2: Second opening C3: third opening C4: Fourth opening CE: Common electrode CF: color conversion layer CL: wire D: Jiji DL1: the first data line DL2: The second data line G: gate GI: gate insulation GP: clearance H: vertical distance LH: thickness M: display medium layer O1: the first opening O2: second opening O3: third opening O4: Fourth opening OC: Overlay PE1: the first pixel electrode PE2: second pixel electrode PE3: third pixel electrode PE4: fourth pixel electrode PL1: the first polarizer PL2: second polarizer PS: gap PV1, PV2: protective layer S: source SB1: the first substrate SB2: second substrate SE: shielding electrode SL1: first scan line SL2: second scan line T1: the first active component T2: second active component T3: third active component T4: fourth active component TH1: the first through hole TH2: second through hole TH3: third through hole TH4: fourth through hole U: insulating layer W, y, Z: width X1: Part One X2: Part Two
圖1A是依照本發明的一實施例的一種顯示裝置的上視示意圖。 圖1B是沿著圖1A線aa’的剖面示意圖。 圖1C是沿著圖1A線bb’的剖面示意圖。 圖2是依照本發明的一些實施例的顯示裝置之視角亮度模擬圖。 FIG. 1A is a schematic top view of a display device according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along line aa' of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along line bb' of Fig. 1A. 2 is a simulation diagram of viewing angle brightness of a display device according to some embodiments of the present invention.
10:顯示裝置 10: display device
AS:通道層 AS: channel layer
C1:第一開孔 C1: the first opening
C2:第二開孔 C2: Second opening
C3:第三開孔 C3: third opening
C4:第四開孔 C4: Fourth opening
CF:色彩轉換層 CF: color conversion layer
CL:導線 CL: wire
D:汲極 D: Jiji
DL1:第一資料線 DL1: the first data line
DL2:第二資料線 DL2: The second data line
G:閘極 G: gate
GP:間隙 GP: clearance
O1:第一開口 O1: the first opening
O2:第二開口 O2: second opening
O3:第三開口 O3: third opening
O4:第四開口 O4: Fourth opening
PE1:第一畫素電極 PE1: the first pixel electrode
PE2:第二畫素電極 PE2: second pixel electrode
PE3:第三畫素電極 PE3: third pixel electrode
PE4:第四畫素電極 PE4: fourth pixel electrode
PS:間隙物 PS: gap
S:源極 S: source
SB1:第一基板 SB1: the first substrate
SE:遮蔽電極 SE: shielding electrode
SL1:第一掃描線 SL1: first scan line
SL2:第二掃描線 SL2: second scan line
T1:第一主動元件 T1: the first active component
T2:第二主動元件 T2: second active component
T3:第三主動元件 T3: third active component
T4:第四主動元件 T4: fourth active component
TH1:第一通孔 TH1: the first through hole
TH2:第二通孔 TH2: second through hole
TH3:第三通孔 TH3: third through hole
TH4:第四通孔 TH4: fourth through hole
W、y:寬度 W, y: width
X1:第一部分 X1: Part One
X2:第二部分 X2: Part Two
Claims (12)
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