TWI685280B - Air plasma surface treatment apparatus for surface modification of tube inner wall by grafting - Google Patents

Air plasma surface treatment apparatus for surface modification of tube inner wall by grafting Download PDF

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TWI685280B
TWI685280B TW108100734A TW108100734A TWI685280B TW I685280 B TWI685280 B TW I685280B TW 108100734 A TW108100734 A TW 108100734A TW 108100734 A TW108100734 A TW 108100734A TW I685280 B TWI685280 B TW I685280B
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gas
tube
surface treatment
wall
atmospheric plasma
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TW108100734A
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TW202027562A (en
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謝章興
陳榮三
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明志科技大學
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Abstract

An air plasma surface treatment apparatus for surface modification of tube inner wall by grafting, adapted to treat a tube, is provided. The air plasma surface treatment apparatus includes a pulse generator, a first gas source, a second gas source, a monomer source, a nozzle, a first gas path, a second gas path, and a conductive plate. The pulse generator is utilized for generating a high-voltage pulse. The first gas path is connected from the first gas source to the nozzle. The high-voltage pulse is applied to the first gas path for generating air plasma in the tube. The second gas path is connected from the second gas source through the monomer source to the nozzle for providing monomers to the tube. The conductive plate is aligned to the nozzle. The tube is disposed between the nozzle and the conductive plate.

Description

用於管內壁接枝改質之大氣電漿表面處理設備 Atmospheric plasma surface treatment equipment for graft modification of inner wall of pipe

本發明係關於電漿表面處理設備,尤其是關於用於管內壁接枝改質之大氣電漿表面處理設備。 The invention relates to plasma surface treatment equipment, in particular to atmospheric plasma surface treatment equipment used for graft modification of inner wall of pipes.

近年來,人工合成材料在生醫應用上的進展十分迅速。許多人工材料在物理性質上幾乎可以媲美自然組織。但是,因為材料表面特性與人體生化構造不相容,在實際應用上會面臨一些棘手的問題,例如血栓、發炎及感染等。因此,許多表面處理技術已經開發出來,以提升材料之生物相容性。 In recent years, the progress of synthetic materials in the application of biomedicine is very rapid. Many artificial materials are almost comparable to natural tissues in physical properties. However, because the surface characteristics of the material are incompatible with the biochemical structure of the human body, it will face some difficult problems in practical application, such as thrombosis, inflammation and infection. Therefore, many surface treatment technologies have been developed to enhance the biocompatibility of materials.

在這些表面處理技術中,電漿表面處理技術可以針對材料表面10微米深度內之範圍進行作用,不會損及材料主體之特性。此外,電漿表面處理亦可透過改變其進氣種類、處理功率、處理時間等參數,得到多樣化之材料表面特性,以符合實際需求。因此,電漿表面處理之技術,在生醫材料表面改質方面,已獲得廣泛使用。 Among these surface treatment technologies, plasma surface treatment technology can act on the surface of the material within a depth of 10 microns, without compromising the characteristics of the material body. In addition, plasma surface treatment can also obtain diverse material surface characteristics by changing its air intake type, processing power, processing time and other parameters to meet actual needs. Therefore, the technology of plasma surface treatment has been widely used in the surface modification of biomedical materials.

不過,受限於所產生之電漿距離與範圍,傳統之電漿表面處理技術無法有效針對管材(如人工血管、導管等)之內壁進行表面處理。 However, due to the distance and range of the generated plasma, the traditional plasma surface treatment technology cannot effectively perform surface treatment on the inner wall of the pipe (such as artificial blood vessels, catheters, etc.).

有鑑於此,本發明提供一種用於管內壁接枝改質之大氣電漿表面處理設備,可針對管材內壁進行表面處理。 In view of this, the present invention provides an atmospheric plasma surface treatment device for graft modification of the inner wall of a pipe, which can perform surface treatment on the inner wall of the pipe.

本發明之一實施例提供一種用於管內壁接枝改質之大氣電漿表面處理設備,用以對一管材內壁進行表面處理。此大氣電漿表面處理設備包括一脈衝產生器、一第一氣體源、一第二氣體源、一高分子單體(monomer)源、一噴嘴、一第一氣體流路、一第二氣體流路與一導電板。其中,脈衝產生器包括一正極與一負極,以產生一高壓脈衝。第一氣體源係用以提供一第一氣體。第二氣體源係用以提供一第二氣體作為一載氣。高分子單體源係用以提供一高分子單體。載氣係用以攜帶高分子單體。噴嘴係用以連接管材。第一氣體流路係由第一氣體源連接至噴嘴,並且,脈衝產生器所產生之高壓脈衝係施加於此第一氣體流路,以產生大氣電漿由噴嘴噴發。第二氣體流路係由第二氣體源透過高分子單體源連接至噴嘴,以提供高分子單體至管材內部。導電板係對準噴嘴之一噴發方向。管材係設置於噴嘴與導電板之間。 An embodiment of the present invention provides an atmospheric plasma surface treatment device for graft modification of an inner wall of a pipe, which is used for surface treatment of an inner wall of a pipe. The atmospheric plasma surface treatment equipment includes a pulse generator, a first gas source, a second gas source, a monomer source, a nozzle, a first gas flow path, and a second gas flow Road and a conductive board. The pulse generator includes a positive electrode and a negative electrode to generate a high-voltage pulse. The first gas source is used to provide a first gas. The second gas source is used to provide a second gas as a carrier gas. The polymer monomer source is used to provide a polymer monomer. The carrier gas is used to carry high molecular monomers. The nozzle is used to connect the pipe. The first gas flow path is connected to the nozzle by the first gas source, and the high-pressure pulse generated by the pulse generator is applied to the first gas flow path to generate atmospheric plasma to be emitted from the nozzle. The second gas flow path is connected to the nozzle by the second gas source through the polymer monomer source to provide the polymer monomer to the inside of the pipe. The conductive plate is aligned with one of the nozzles. The pipe is arranged between the nozzle and the conductive plate.

相較於傳統之電漿表面處理技術,本發明 所提供之大氣電漿表面處理設備,可以在大氣環境內生成長距離之電漿,以利於對管材內壁進行清潔、交聯(cross-linking)、機能化(functionalization)、聚合化(polymerization)等表面處理。 Compared with the traditional plasma surface treatment technology, the present invention The provided atmospheric plasma surface treatment equipment can generate a long distance plasma in the atmospheric environment to facilitate the cleaning, cross-linking, functionalization and polymerization of the inner wall of the pipe Wait for surface treatment.

本發明所採用的具體實施例,將藉由以下之實施例及圖式作進一步之說明。 The specific embodiments adopted by the present invention will be further described by the following embodiments and drawings.

10,20‧‧‧管材 10,20‧‧‧tube

100,200‧‧‧大氣電漿表面處理設備 100,200‧‧‧Atmospheric plasma surface treatment equipment

120,220‧‧‧脈衝產生器 120,220‧‧‧Pulse generator

130,230‧‧‧第一氣體源 130,230‧‧‧First gas source

140‧‧‧第二氣體源 140‧‧‧Second gas source

150‧‧‧高分子單體源 150‧‧‧polymer monomer source

160,260‧‧‧噴嘴 160,260‧‧‧ nozzle

170,270‧‧‧第一氣體流路 170,270‧‧‧ First gas flow path

180‧‧‧第二氣體流路 180‧‧‧ Second gas flow path

172,182,272‧‧‧流量控制器 172,182,272‧‧‧Flow controller

190,290‧‧‧導電板 190,290‧‧‧ conductive plate

122,222‧‧‧正極 122,222‧‧‧Positive

124,224‧‧‧負極 124,224‧‧‧Negative

D1‧‧‧預設距離 D1‧‧‧Preset distance

第一圖係本發明之用於管內壁接枝改質之大氣電漿表面處理設備第一實施例之配置示意圖。 The first figure is the configuration diagram of the first embodiment of the atmospheric plasma surface treatment equipment for graft modification of the inner wall of the present invention.

第二圖係本發明之大氣電漿表面處理設備第二實施例之配置示意圖。 The second figure is a schematic configuration diagram of a second embodiment of the atmospheric plasma surface treatment device of the present invention.

下面將結合示意圖對本發明的具體實施方式進行更詳細的描述。根據下列描述和申請專利範圍,本發明的優點和特徵將更清楚。需說明的是,圖式均採用非常簡化的形式且均使用非精準的比例,僅用以方便、明晰地輔助說明本發明實施例的目的。 The specific embodiments of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be clearer from the following description and patent application scope. It should be noted that the drawings are in a very simplified form and all use inaccurate proportions, which are only used to conveniently and clearly assist the purpose of explaining the embodiments of the present invention.

第一圖係本發明之用於管內壁接枝改質之大氣電漿表面處理設備第一實施例之配置示意圖。此大氣電漿表面處理設備100係用以對一管材10內壁進行表面處理。此管材10可以是人工血管、導管等應用於生醫領域之人工裝置。管材10可由聚對苯二甲酸乙二酯 (PET或PETE),聚四氟乙烯(PTFE),聚乙烯(PE),矽橡膠(silicon rubber),聚氯乙烯(PVC)、聚氨酯(PU)等高分子材料所構成。不過,亦不限於此。任何可透過電漿處理進行高分子接枝之材質,均可適用於本發明。 The first figure is the configuration diagram of the first embodiment of the atmospheric plasma surface treatment equipment for graft modification of the inner wall of the present invention. The atmospheric plasma surface treatment device 100 is used to perform surface treatment on the inner wall of a pipe 10. The tubing 10 may be artificial devices such as artificial blood vessels and catheters, which are applied in the field of biomedicine. The pipe 10 may be made of polyethylene terephthalate (PET or PETE), polytetrafluoroethylene (PTFE), polyethylene (PE), silicon rubber (silicon rubber), polyvinyl chloride (PVC), polyurethane (PU) and other polymer materials. However, it is not limited to this. Any material that can be polymer grafted by plasma treatment can be applied to the present invention.

如圖中所示,此大氣電漿表面處理設備100包括一脈衝產生器120、一第一氣體源130、一第二氣體源140、一高分子單體(monomer)源150、一噴嘴160、一第一氣體流路170、一第二氣體流路180與一導電板190。 As shown in the figure, the atmospheric plasma surface treatment device 100 includes a pulse generator 120, a first gas source 130, a second gas source 140, a monomer source 150, a nozzle 160, A first gas flow path 170, a second gas flow path 180 and a conductive plate 190.

其中,脈衝產生器120包括一正極122與一負極124,以產生一高壓脈衝。就一實施例而言,此脈衝產生器可以是一直流脈衝產生器(DC pulse generator),其正極122係一鎢電極,負極124係接地。不過,本發明並不限於此。此脈衝產生器120亦可以是一交流脈衝產生器(AC pulse generator)或射頻脈衝產生器(RF pulse generator)。 The pulse generator 120 includes a positive electrode 122 and a negative electrode 124 to generate a high voltage pulse. For an embodiment, the pulse generator may be a DC pulse generator, the positive electrode 122 is a tungsten electrode, and the negative electrode 124 is grounded. However, the present invention is not limited to this. The pulse generator 120 may also be an AC pulse generator or an RF pulse generator.

第一氣體源130係用以提供一第一氣體。此第一氣體係用以產生大氣電漿。就一實施例而言,此第一氣體係氦氣(He)、氖氣(Ne)或氬氣(Ar)等惰性氣體。 The first gas source 130 is used to provide a first gas. This first gas system is used to generate atmospheric plasma. In an embodiment, the first gas system is an inert gas such as helium (He), neon (Ne), or argon (Ar).

第二氣體源140係用以提供一第二氣體。此第二氣體係作為一載氣,以攜帶高分子單體至管材10。就一實施例而言,第二氣體也是氦氣(He)、氖氣(Ne)或氬氣(Ar)等惰性氣體。在一實施例中,第二氣體與第一氣體相同。又,在一實施例中,第一氣體之流量大於第二氣體之流量。 The second gas source 140 is used to provide a second gas. The second gas system serves as a carrier gas to carry the polymer monomer to the pipe 10. In one embodiment, the second gas is also an inert gas such as helium (He), neon (Ne), or argon (Ar). In one embodiment, the second gas is the same as the first gas. Furthermore, in an embodiment, the flow rate of the first gas is greater than the flow rate of the second gas.

高分子單體源150係用以提供一高分子單體至管材10內壁,以進行沉積(deposition)、聚合等表面處理。就一實施例而言,此高分子單體具有至少一官能基。此官能基係選自由胺基(-NH2)、羧酸基(-COOH)、羥基(-OH)、醛基(-CHO)構成之一群組。在一實施例中,此高分子單體係環丙胺(Cyclopropylamine)、烯丙胺(Allylamine)、環己二胺(diaminocyclohexane)、正庚胺(heptylamine)、乙二胺(ethylenediamine)、正丁胺(butylamine)、丙炔胺(propargylamine)或正丙胺(propylamine)。此高分子單體源150可提供氣態或液態之高分子單體。 The polymer monomer source 150 is used to provide a polymer monomer to the inner wall of the pipe 10 for surface treatment such as deposition and polymerization. For an embodiment, the polymer monomer has at least one functional group. The functional group is selected from the group consisting of amine group (-NH 2 ), carboxylic acid group (-COOH), hydroxyl group (-OH), and aldehyde group (-CHO). In one embodiment, this single polymer system cyclopropylamine (Cyclopropylamine), allylamine (allylamine), cyclohexane diamine (diaminocyclohexane), n-heptyl amine (Heptylamine), ethylenediamine (ethylenediamine), n-butyl amine ( butylamine), propargylamine or propylamine. The polymer monomer source 150 can provide gaseous or liquid polymer monomers.

第一氣體流路170係由第一氣體源130連接至噴嘴160。第一氣體流路170上設置有一流量控制器172以控制第一氣體之流量。管材10則是連接至噴嘴160。脈衝產生器120之正極與負極係緊靠於第一氣體流路170,以將高壓脈衝施加於第一氣體流路170,藉以產生大氣電漿由噴嘴160噴發至管材10內部。 The first gas flow path 170 is connected to the nozzle 160 by the first gas source 130. A flow controller 172 is provided on the first gas flow path 170 to control the flow rate of the first gas. The pipe 10 is connected to the nozzle 160. The positive electrode and the negative electrode of the pulse generator 120 are in close proximity to the first gas flow path 170 to apply high-pressure pulses to the first gas flow path 170, thereby generating atmospheric plasma to be emitted from the nozzle 160 into the tube 10.

第二氣體流路180係由第二氣體源140透過高分子單體源150連接至噴嘴160。第二氣體流路180上設置有一流量控制器182以控制第二氣體之流量。第二氣體源140所提供之第二氣體流經高分子單體源150後,會攜帶高分子單體至管材10內壁進行反應,以形成高分子鍍層或是改變管材內壁之高分子材料的特性。 The second gas flow path 180 is connected to the nozzle 160 by the second gas source 140 through the polymer monomer source 150. A flow controller 182 is provided on the second gas flow path 180 to control the flow rate of the second gas. After the second gas provided by the second gas source 140 flows through the polymer monomer source 150, it will carry the polymer monomer to the inner wall of the tube 10 to react to form a polymer coating or change the polymer material on the inner wall of the tube Characteristics.

導電板190係對準噴嘴160之噴發方向,以提升電漿之噴發距離。管材10係設置於噴嘴160與導電板 190之間。在一實施例中,此導電板190係一接地之銅板。在一實施例中,導電板190係設置於管材10之一末端後方一預設距離D1,而未與管材10相接觸。就一實施例而言,此預設距離D1係小於1公分。 The conductive plate 190 is aligned with the spray direction of the nozzle 160 to increase the spray distance of the plasma. The tube 10 is disposed on the nozzle 160 and the conductive plate Between 190. In one embodiment, the conductive plate 190 is a grounded copper plate. In one embodiment, the conductive plate 190 is disposed at a predetermined distance D1 behind one end of the pipe 10 without contacting the pipe 10. For an embodiment, the predetermined distance D1 is less than 1 cm.

下表(表一)列出本發明之大氣電漿表面處理設備100實際進行管內壁接枝改質處理之實驗數據,以說明此大氣電漿表面處理設備100之特性與優點。值得注意的是,此實驗數據僅為輔助說明本發明之目的與優點,並不對本發明之範圍進行任何限制。 The following table (Table 1) lists the experimental data of the atmospheric plasma surface treatment equipment 100 of the present invention actually undergoing graft modification treatment on the inner wall of the tube to illustrate the characteristics and advantages of the atmospheric plasma surface treatment equipment 100. It is worth noting that the experimental data is only to help explain the purpose and advantages of the present invention, and does not limit the scope of the present invention.

Figure 108100734-A0101-12-0006-1
Figure 108100734-A0101-12-0006-1

本發明大氣電漿表面處理設備100進行表面處理之管材內徑為3mm,長度為11.5cm。依據此實驗數據實際產生用於管內壁接枝改質之環丙胺接枝濃度為9.514*10-7mol/cm2The inner diameter of the pipe for surface treatment by the atmospheric plasma surface treatment device 100 of the present invention is 3 mm, and the length is 11.5 cm. According to the experimental data, the concentration of the grafting of cyclopropylamine used for graft modification of the inner wall of the tube was 9.514*10-7mol/cm 2 .

第二圖係本發明之大氣電漿表面處理設備第二實施例之配置示意圖。此大氣電漿表面處理設備200係用以對一管材20內壁進行表面處理。此管材20可以是人工血管、導管等應用於生醫領域之人工裝置。管材20可包含聚對苯二甲酸乙二酯(PET或PETE),聚四氟乙烯(PTFE),聚乙烯(PE),矽橡膠(silicon rubber),聚氯乙烯(PVC)、聚氨酯(PU)等高分子材料。 The second figure is a schematic configuration diagram of a second embodiment of the atmospheric plasma surface treatment device of the present invention. The atmospheric plasma surface treatment device 200 is used to perform surface treatment on the inner wall of a pipe 20. The tubing 20 may be artificial devices such as artificial blood vessels and catheters, which are applied in the field of biomedicine. The pipe 20 may include polyethylene terephthalate (PET or PETE), polytetrafluoroethylene (PTFE), polyethylene (PE), silicon rubber (silicon rubber), polyvinyl chloride (PVC), polyurethane (PU) And other polymer materials.

相較於第一圖之大氣電漿表面處理設備100,本實施例之大氣電漿表面處理設備200並不具有第二氣體源140與高分子單體源150。本實施例之大氣電漿表面處理設備200所具有之脈衝產生器220、正極222、負極224、第一氣體源230、噴嘴260、第一氣體流路270、流量控制器272與導電板290類似於第一圖之實施例中之對應元件,在此不予贅述。 Compared with the atmospheric plasma surface treatment apparatus 100 of the first figure, the atmospheric plasma surface treatment apparatus 200 of this embodiment does not have the second gas source 140 and the polymer monomer source 150. The pulse generator 220, the positive electrode 222, the negative electrode 224, the first gas source 230, the nozzle 260, the first gas flow path 270, and the flow controller 272 of the atmospheric plasma surface treatment apparatus 200 of this embodiment are similar to the conductive plate 290 Corresponding elements in the embodiment of the first figure will not be repeated here.

此大氣電漿表面處理設備200並不提供高分子單體至管材20內壁進行沉積、聚合等表面處理,而是著重於利用長距離之電漿對管材20內壁進行表面清潔、表面強化,或是搭配反應氣體之使用以達到活化管材內壁之效果。 The atmospheric plasma surface treatment device 200 does not provide polymer monomers to the inner wall of the pipe 20 for deposition, polymerization and other surface treatments, but focuses on the surface cleaning and surface strengthening of the inner wall of the pipe 20 using long-distance plasma. Or it can be used with reactive gas to activate the inner wall of the pipe.

相較於傳統之電漿表面處理技術,本發明所提供之大氣電漿表面處理設備,可以在大氣環境內生成長距離之電漿,以利於對管材內壁進行清潔、交聯、機能化、聚合化等表面處理。 Compared with the traditional plasma surface treatment technology, the atmospheric plasma surface treatment equipment provided by the present invention can generate long-distance plasma in the atmospheric environment to facilitate the cleaning, cross-linking, and functionalization of the inner wall of the pipe. Surface treatment such as polymerization.

上述僅為本發明較佳之實施例而已,並不對本發明進行任何限制。任何所屬技術領域的技術人 員,在不脫離本發明的技術手段的範圍內,對本發明揭露的技術手段和技術內容做任何形式的等同替換或修改等變動,均屬未脫離本發明的技術手段的內容,仍屬於本發明的保護範圍之內。 The above are only preferred embodiments of the present invention, and do not limit the present invention in any way. Anyone skilled in the technical field Members, within the scope of not departing from the technical means of the present invention, any equivalent replacement or modification of the technical means and technical contents disclosed in the present invention is any form of content that does not deviate from the technical means of the present invention and still belongs to the present invention Within the scope of protection.

10‧‧‧管材 10‧‧‧tube

100‧‧‧大氣電漿表面處理設備 100‧‧‧Atmospheric plasma surface treatment equipment

120‧‧‧脈衝產生器 120‧‧‧Pulse generator

130‧‧‧第一氣體源 130‧‧‧First gas source

140‧‧‧第二氣體源 140‧‧‧Second gas source

150‧‧‧高分子單體源 150‧‧‧polymer monomer source

160‧‧‧噴嘴 160‧‧‧ nozzle

170‧‧‧第一氣體流路 170‧‧‧ First gas flow path

180‧‧‧第二氣體流路 180‧‧‧ Second gas flow path

172,182‧‧‧流量控制器 172,182‧‧‧Flow controller

190‧‧‧導電板 190‧‧‧conductive plate

122‧‧‧正極 122‧‧‧Positive

124‧‧‧負極 124‧‧‧Negative

D1‧‧‧預設距離 D1‧‧‧Preset distance

Claims (8)

一種用於管內壁接枝改質之大氣電漿表面處理設備,用以對一管材內壁進行表面處理,該大氣電漿表面處理設備包括:一脈衝產生器,包括一正極與一負極,用以產生一高壓脈衝;一第一氣體源,用以提供一第一氣體;一第二氣體源,用以提供一第二氣體作為一載氣;一高分子單體(monomer)源,用以提供一高分子單體;一噴嘴;一第一氣體流路,由該第一氣體源連接至該噴嘴,並且,該脈衝產生器產生之該高壓脈衝係施加於該第一氣體流路,以產生大氣電漿由該噴嘴噴發;一第二氣體流路,由該第二氣體源透過該高分子單體源連接至該噴嘴,以提供該高分子單體進行接枝改質;以及一導電板,對準該噴嘴之一噴發方向,該管材係設置於該噴嘴與該導電板之間;其中,該第一氣體之流量大於該第二氣體之流量,且該管材係一高分子管材。 An atmospheric plasma surface treatment device for graft modification of the inner wall of a tube is used for surface treatment of the inner wall of a tube. The atmospheric plasma surface treatment device includes: a pulse generator, including a positive electrode and a negative electrode, It is used to generate a high-pressure pulse; a first gas source is used to provide a first gas; a second gas source is used to provide a second gas as a carrier gas; and a monomer source is used To provide a polymer monomer; a nozzle; a first gas flow path, connected to the nozzle by the first gas source, and the high-pressure pulse generated by the pulse generator is applied to the first gas flow path, To generate atmospheric plasma from the nozzle; a second gas flow path, connected to the nozzle from the second gas source through the polymer monomer source, to provide the polymer monomer for graft modification; and a The conductive plate is aligned with one of the spraying directions of the nozzle, the tube is disposed between the nozzle and the conductive plate; wherein the flow rate of the first gas is greater than the flow rate of the second gas, and the tube is a polymer tube . 如申請專利範圍第1項之用於管內壁接枝改質之大氣電漿表面處理設備,其中,該第一氣體係氦氣(He)、氖氣(Ne)或氬氣(Ar)。 For example, the atmospheric plasma surface treatment equipment used for graft modification of the inner wall of a tube in the first scope of the patent application, wherein the first gas system is helium (He), neon (Ne) or argon (Ar). 如申請專利範圍第1項之用於管內壁接枝改質之大氣電漿表面處理設備,其中,該第二氣體係氦 氣(He)、氖氣(Ne)或或氬氣(Ar)。 Such as the atmospheric plasma surface treatment equipment used for graft modification of the inner wall of the tube in the first scope of the patent application, in which the second gas system is helium Gas (He), neon (Ne) or argon (Ar). 如申請專利範圍第1項之用於管內壁接枝改質之大氣電漿表面處理設備,其中,該高分子單體具有至少一官能基,該官能基係選自由胺基(-NH2)、羧酸基(-COOH)、羥基(-OH)、醛基(-CHO)構成之一群組。 For example, the atmospheric plasma surface treatment equipment for graft modification of the inner wall of the tube of the patent application item 1, wherein the polymer monomer has at least one functional group selected from the group consisting of an amine group (-NH 2 ), carboxylic acid group (-COOH), hydroxyl group (-OH), aldehyde group (-CHO) form a group. 如申請專利範圍第1項之用於管內壁接枝改質之大氣電漿表面處理設備,其中,該高壓脈衝係一直流脈衝或是一射頻脈衝。 For example, the atmospheric plasma surface treatment equipment used for graft modification of the inner wall of the tube of the patent application item 1, wherein the high voltage pulse is a DC pulse or a radio frequency pulse. 如申請專利範圍第1項之用於管內壁接枝改質之大氣電漿表面處理設備,其中,該導電板係一銅板。 For example, the atmospheric plasma surface treatment equipment used for graft modification of the inner wall of the tube in the first scope of the patent application, wherein the conductive plate is a copper plate. 如申請專利範圍第1項之用於管內壁接枝改質之大氣電漿表面處理設備,其中,該導電板係設置於該管材之一末端之後方一預設距離,該預設距離小於1公分。 For example, the atmospheric plasma surface treatment equipment used for graft modification of the inner wall of the tube of the patent application item 1, wherein the conductive plate is arranged at a predetermined distance behind one end of the tube, and the predetermined distance is less than 1 cm. 如申請專利範圍第1項之用於管內壁接枝改質之大氣電漿表面處理設備,其中,該管材係一人工血管。 For example, the atmospheric plasma surface treatment equipment used for graft modification of the inner wall of the tube in the scope of patent application item 1, wherein the tube is an artificial blood vessel.
TW108100734A 2019-01-08 2019-01-08 Air plasma surface treatment apparatus for surface modification of tube inner wall by grafting TWI685280B (en)

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TW200927994A (en) * 2007-12-25 2009-07-01 Univ Chung Yuan Christian Method for forming composite membrane having porous coating layer and apparatus thereof
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