TWI684292B - Light emitting diode structure - Google Patents
Light emitting diode structure Download PDFInfo
- Publication number
- TWI684292B TWI684292B TW107121077A TW107121077A TWI684292B TW I684292 B TWI684292 B TW I684292B TW 107121077 A TW107121077 A TW 107121077A TW 107121077 A TW107121077 A TW 107121077A TW I684292 B TWI684292 B TW I684292B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- semiconductor epitaxial
- substrate
- epitaxial structure
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 138
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 5
- 230000001568 sexual effect Effects 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Abstract
Description
本發明是有關於一種半導體結構,且特別是有關於一種發光二極體結構。The present invention relates to a semiconductor structure, and in particular to a light emitting diode structure.
一般而言,於製作發光二極體晶圓時,通常是先提供一基板,利用磊晶成長方式,於基板上形成一磊晶結構,接著在磊晶結構上配置電極以提供電能,便可利用光電效應而發光。之後,利用微影蝕刻技術在磊晶結構中形成複數個縱橫交錯之切割道。其中,每相鄰之二縱向的切割道與相鄰之二橫向的切割道共同定義出一發光二極體晶粒。之後,進行後段之研磨與切割製程,將發光二極體晶圓分成許多的發光二極體晶粒,進而完成發光二極體的製作。Generally speaking, when manufacturing a light-emitting diode wafer, a substrate is usually provided first, and an epitaxial structure is formed on the substrate by epitaxial growth, and then electrodes are arranged on the epitaxial structure to provide electrical energy. Use the photoelectric effect to emit light. Afterwards, a plurality of crisscross cutting channels are formed in the epitaxial structure by using lithography etching technology. Among them, each adjacent two longitudinal cutting lanes and two adjacent transverse cutting lanes together define a light-emitting diode grain. Afterwards, a subsequent grinding and cutting process is performed to divide the light-emitting diode wafer into a plurality of light-emitting diode crystal grains, and then the production of the light-emitting diode is completed.
為了增加發光二極體的出光效率,習知會於磊晶結構上依序增設歐姆接觸層、反射層以及阻障層,其中歐姆接觸層、反射層以及阻障層皆只覆蓋於部分磊晶結構上。雖然上述之方式可增加發光二極體的出光效率,但其出光效率無法滿足現今追求高出光效率的要求。因此,如何充分提高發光二極體的出光效率仍然是亟待克服的問題。In order to increase the light emitting efficiency of the light emitting diode, it is known to add an ohmic contact layer, a reflective layer and a barrier layer on the epitaxial structure in sequence, wherein the ohmic contact layer, the reflective layer and the barrier layer only cover part of the epitaxial structure on. Although the above-mentioned method can increase the light emitting efficiency of the light emitting diode, the light emitting efficiency cannot meet the requirements of today's pursuit of high light emitting efficiency. Therefore, how to fully improve the light emitting efficiency of the light emitting diode is still an urgent problem to be overcome.
本發明提供一種發光二極體結構,其具有良好的出光效率(light-emitting efficiency)。The invention provides a light-emitting diode structure, which has good light-emitting efficiency.
本發明的實施例的發光二極體結構包括基板、半導體磊晶結構、第一絕緣層、反射層、第二絕緣層以及至少一電極。半導體磊晶結構配置於基板上,且暴露出部分基板。第一絕緣層覆蓋部分半導體磊晶結構以及被半導體磊晶結構所暴露出之部分基板。反射層配置於第一絕緣層上,第二絕緣層,配置於反射層上。電極配置於第二絕緣層上並電極電性連接半導體磊晶結構。The light emitting diode structure of the embodiment of the present invention includes a substrate, a semiconductor epitaxial structure, a first insulating layer, a reflective layer, a second insulating layer, and at least one electrode. The semiconductor epitaxial structure is disposed on the substrate and exposes part of the substrate. The first insulating layer covers part of the semiconductor epitaxial structure and part of the substrate exposed by the semiconductor epitaxial structure. The reflective layer is disposed on the first insulating layer, and the second insulating layer is disposed on the reflective layer. The electrode is disposed on the second insulating layer and the electrode is electrically connected to the semiconductor epitaxial structure.
本發明的實施例的發光二極體結構包括基板、半導體磊晶結構、透明導電層、反射層、第一絕緣層以及至少一電極。半導體磊晶結構配置於基板上,且暴露出部分基板。透明導電層配置在半導體磊晶結構上。反射層配置在部分透明導電層上且延伸覆蓋被半導體磊晶層所暴露出之部分基板。第一絕緣層配置於反射層上。電極配置於第二絕緣層上,並電極電性連接半導體磊晶結構。The light emitting diode structure of the embodiment of the present invention includes a substrate, a semiconductor epitaxial structure, a transparent conductive layer, a reflective layer, a first insulating layer, and at least one electrode. The semiconductor epitaxial structure is disposed on the substrate and exposes part of the substrate. The transparent conductive layer is disposed on the semiconductor epitaxial structure. The reflective layer is disposed on the partially transparent conductive layer and extends to cover a part of the substrate exposed by the semiconductor epitaxial layer. The first insulating layer is disposed on the reflective layer. The electrode is disposed on the second insulating layer, and the electrode is electrically connected to the semiconductor epitaxial structure.
本發明的實施例的發光二極體結構包括基板、半導體磊晶結構、第一絕緣層、反射層、第二絕緣層以及至少一第一電極。半導體磊晶結構配置於基板上。第一絕緣層覆蓋部分半導體磊晶結構以及部分基板。反射層配置於第一絕緣層上,第二絕緣層配置於反射層上。第一電極配置於第二絕緣層上,並電極電性連接半導體磊晶結構。The light emitting diode structure of the embodiment of the present invention includes a substrate, a semiconductor epitaxial structure, a first insulating layer, a reflective layer, a second insulating layer, and at least one first electrode. The semiconductor epitaxial structure is disposed on the substrate. The first insulating layer covers part of the semiconductor epitaxial structure and part of the substrate. The reflective layer is disposed on the first insulating layer, and the second insulating layer is disposed on the reflective layer. The first electrode is disposed on the second insulating layer, and the electrode is electrically connected to the semiconductor epitaxial structure.
本發明的實施例的發光二極體結構包括基板、半導體磊晶結構、透明導電層、反射層、第一絕緣層以及至少一電極。半導體磊晶結構配置於基板上。透明導電層配置在半導體磊晶結構上。反射層位在基板上並覆蓋至少部分透明導電層及至少部分半導體磊晶結構。第一絕緣層覆蓋至少部分反射層及至少部分透明導電層及至少部分半導體磊晶結構。電極配置第二絕緣層上,並電極電性連接半導體磊晶結構。The light emitting diode structure of the embodiment of the present invention includes a substrate, a semiconductor epitaxial structure, a transparent conductive layer, a reflective layer, a first insulating layer, and at least one electrode. The semiconductor epitaxial structure is disposed on the substrate. The transparent conductive layer is disposed on the semiconductor epitaxial structure. The reflective layer is located on the substrate and covers at least part of the transparent conductive layer and at least part of the semiconductor epitaxial structure. The first insulating layer covers at least part of the reflective layer and at least part of the transparent conductive layer and at least part of the semiconductor epitaxial structure. The electrode is disposed on the second insulating layer, and the electrode is electrically connected to the semiconductor epitaxial structure.
基於上述,由於本發明的發光二極體結構具有反射導電結構層,且此反射導電結構層覆蓋部分半導體磊晶層以及被半導體磊晶層所暴露出之基板的部分。因此,反射導電結構層可有效反射來自半導體磊晶層的光線,且被半導體磊晶層所暴露出之基板的部分亦具有反射的功效。如此一來,反射導電結構層的設置可有效增加反射面積,進而可有效提高整體發光二極體結構的出光效率。Based on the above, since the light emitting diode structure of the present invention has a reflective conductive structure layer, and the reflective conductive structure layer covers part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer. Therefore, the reflective conductive structure layer can effectively reflect the light from the semiconductor epitaxial layer, and the portion of the substrate exposed by the semiconductor epitaxial layer also has a reflective effect. In this way, the reflective conductive structure layer can effectively increase the reflective area, and thus can effectively improve the light emitting efficiency of the overall light emitting diode structure.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.
圖1繪示為本發明的一實施例的一種發光二極體結構的剖面示意圖。請參考圖1,在本實施例中,發光二極體結構100a包括一基板110a、一半導體磊晶層120a(於以下段落中所指的半導體磊晶層亦可指代為半導體磊晶結構)以及一反射導電結構層130a。半導體磊晶層120a配置於基板110a上,且暴露出基板110a的一部分(圖1中的虛圓A處)。反射導電結構層130a配置於半導體磊晶層120a上,其中反射導電結構層130a覆蓋部分半導體磊晶層120a以及被半導體磊晶層120a所暴露出之基板110a的部分。FIG. 1 is a schematic cross-sectional view of a light-emitting diode structure according to an embodiment of the invention. Please refer to FIG. 1. In this embodiment, the light
更具體來說,在本實施例中,基板110a例如是一藍寶石基板,但並不以此為限,其中基板110a具有一上表面112a。半導體磊晶層120a包括依序配置於基板110a上的一第一型半導體層122a、一發光層124a以及一第二型半導體層126a。此處,第一型半導體層122a例如為一N型半導體層,而第二型半導體層126a例如為一P型半導體層,但並不以此為限。如圖1所示,半導體磊晶層120a並未完全覆蓋基板110a的上表面112a,而是暴露出基板110a的部分上表面112a。More specifically, in this embodiment, the
特別是,本實施例的反射導電結構層130a是由依序配置的一透明導電層132a、一反射層134a(於以下段落中所指的反射層亦可指代為第一反射層、第一金屬反射層或布拉格反射鏡層)以及一阻障層136a(於以下段落中所指的阻障層亦可指代為第二反射層或第二金屬反射層)所組成。透明導電層132a可視為一歐姆接觸層,其目的在於可以增加電流傳導且使電流能均勻散佈,其中透明導電層132a配置於半導體磊晶層120a上且覆蓋基板110a被半導體磊晶層120a所曝露出的上表面112a上。此處,透明導電層132a的材料係選自銦錫氧化物、摻鋁氧化鋅、銦鋅氧化物及上述此等所組成之族群其中之一。於本實例中的透明導電層132a係由銦錫氧化物所構成。反射層134a配置於透明導電層132a上。反射層134a可將來自半導體磊晶層120a的光線反射至基板110a,當本發明之發光二極體結構100a應用於例如是覆晶式發光二極體時,可使出光效率更佳。此處,反射層134a的材料例如是選自銀、鉻、鎳、鋁及上述此等所組成之族群其中之一;或者是,反射層134a例如是一布拉格反射鏡。於本實例中的反射層134a是由銀所構成。阻障層136a配置於反射層134a上且覆蓋基板110a被半導體磊晶層120a所曝露出的上表面112a上,其中阻障層136a除了也具有反射功能外,也可以保護反射層134a的結構,避免反射層134a中的金屬擴散。此處,阻障層136a的邊緣切齊於基板110a的邊緣,且阻障層136a的材料例如係選自是鈦鎢合金、鈦、鎢、氮化鈦、鉭、鉻、鉻銅合金、氮化鉭及上述此等所組成之族群其中之一,於本實施例中,阻障層136a係由鈦、鎢及鈦鎢合金所構成。In particular, the reflective
再者,本實施例的發光二極體結構100a更包括一絕緣層140a(於以下段落中所指的絕緣層亦可指代為第一絕緣層),其中絕緣層140a配置於基板110a與反射導電結構層130a之間以及半導體磊晶層120a與反射導電結構層130a之間,以有效電性絕緣於半導體磊晶層120a與反射導電結構層130a。如圖1所示,本實施例的絕緣層140a是直接配置於半導體磊晶層120a上,且沿著半導體磊晶層120a的側壁延伸配置於基板110a被半導體磊晶層120a所暴露出的上表面112a上。透明導電層132a與其上的反射層134a並未完全覆蓋絕緣層140a,而阻障層136a沿著透明導電層132a與反射層134a側壁延伸覆蓋至絕緣層140a上。此處,絕緣層140a邊緣亦切齊於阻障層136a的邊緣以及基板110a的邊緣。Furthermore, the light
此外,本實施例的發光二極體結構100a更包括一第一電極150a、一第二電極160a以及一連接層170a。半導體磊晶層120a具有一凹陷區域C,且凹陷區域C將半導體磊晶層120a區分為一第一半導體區塊S1與一第二半導體區塊S2。第一電極150a配置於第一半導體區塊S1上,而第二電極160a配置於第二半導體區塊S2上,其中第一電極150a與第二電極160a具有電性可提供電能。連接層170a配置於凹陷區域C內且電性連接第一電極150a與半導體磊晶層120a。此處,第一電極150a與連接層170a的材料可相同或不同,較佳是為不同材料。第一電極150a的材料係選自金、錫、金錫合金及上述此等所組成之族群其中之一。連接層170a的材料係選自鉻、鉑、金、鋁、上述材料之合金及上述此等所組成之族群其中之一。材料不同使得第一電極150a與連接層170a有更佳的電性連接,但於此並不加以限制。此處,第一電極150a透過連接層170a與半導體磊晶層120a之第一型半導體層122a電性連接,第二電極160a透過反射導電結構層130a與半導體磊晶層120a之第二型半導體層126a電性連接,透過第一電極150a和第二電極160a提供電能,使發光二極體結構100a發光。In addition, the light
另外,發光二極體結構100a可更包括一電性絕緣層145a(於以下段落中所指的電性絕緣層亦可指代為第二絕緣層),其中電性絕緣層145a至少配置於第一電極150a與反射導電結構層130a之間以及連接層170a與反射導電結構層130a之間,用以電性絕緣反射導電結構層130a、連接層170a與第一電極150a。此處,電性絕緣層145a的邊緣亦與阻障層136a的邊緣、絕緣層140的邊緣以及基板110a的邊緣切齊。In addition, the light emitting
由於本實施例的發光二極體結構100a具有反射導電結構層130a,且此反射導電結構層130a覆蓋部分半導體磊晶層120a以及被半導體磊晶層120a所暴露出之基板110a的部分。因此,反射導電結構層130a可有效反射來自半導體磊晶層120a的光線,且使被半導體磊晶層120a所暴露出之基板110a的部分亦具有反射的功效。如此一來,當發光二極體結構100a應用於例如覆晶式的設計上時,反射導電結構層130a的設置可有效增加反射面積,進而可有效提高整體發光二極體結構100a的出光效率。Since the light emitting
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments follow the element numbers and partial contents of the foregoing embodiments, wherein the same reference numbers are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
圖2繪示為本發明的另一實施例的一種發光二極體結構的剖面示意圖。請參考圖2,本實施例之發光二極體結構100b與圖1之發光二極體結構100a相似,惟二者主要差異之處在於:本實施例的基板110b具有一上表面112b以及一連接上表面112b的環狀傾斜面114b,其中絕緣層140b與阻障層136b從上表面112b延伸覆蓋於環狀傾斜面114b上。如圖2所示,反射導電結構層130b的透明導電層132b與反射層134b並未延伸覆蓋於環狀傾斜面114b上。2 is a schematic cross-sectional view of a light-emitting diode structure according to another embodiment of the invention. Please refer to FIG. 2, the light emitting
圖3繪示為本發明的另一實施例的一種發光二極體結構的剖面示意圖。請參考圖3,本實施例之發光二極體結構100c與圖2之發光二極體結構100b相似,惟二者主要差異之處在於:本實施例的反射導電結構層130c的透明導電層132c、反射層134c以及阻障層136c從上表面112b延伸覆蓋於環狀傾斜面114b上,且透明導電層132c的邊緣、反射層134c的邊緣以及阻障層136c的邊緣皆切齊於基板110b的邊緣。此種設計使得反射導電層130c不只配置於基板110b的上表面,更可延伸覆蓋於環狀傾斜面114b上,增加反射面積。3 is a schematic cross-sectional view of a light-emitting diode structure according to another embodiment of the invention. Please refer to FIG. 3, the light emitting
圖4繪示為本發明的另一實施例的一種發光二極體結構的剖面示意圖。請參考圖4,本實施例之發光二極體結構100d與圖2之發光二極體結構100b相似,惟二者主要差異之處在於:本實施例的反射導電結構層130d的透明導電層132d、反射層134d與阻障層136d以及絕緣層140d和電性絕緣層145d皆從上表面112b延伸配置覆蓋於環狀傾斜面114b上且收斂至同一位置。4 is a schematic cross-sectional view of a light-emitting diode structure according to another embodiment of the invention. Referring to FIG. 4, the light emitting
綜上所述,由於本發明的發光二極體結構具有反射導電結構層,且此反射導電結構層覆蓋部分半導體磊晶層以及被半導體磊晶層所暴露出之基板的部分。因此,反射導電結構層可有效反射來自半導體磊晶層的光線,且被半導體磊晶層所暴露出之基板的部分亦具有反射的功效。如此一來,反射導電結構層的設置可有效增加反射面積,進而可有效提高整體發光二極體結構的出光效率。In summary, since the light emitting diode structure of the present invention has a reflective conductive structure layer, and the reflective conductive structure layer covers part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer. Therefore, the reflective conductive structure layer can effectively reflect the light from the semiconductor epitaxial layer, and the portion of the substrate exposed by the semiconductor epitaxial layer also has a reflective effect. In this way, the reflective conductive structure layer can effectively increase the reflective area, and thus can effectively improve the light emitting efficiency of the overall light emitting diode structure.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.
100a、100b、100c、100d‧‧‧發光二極體結構110a、110b‧‧‧基板112a、112b‧‧‧上表面114b‧‧‧環狀傾斜面120a‧‧‧半導體磊晶層、半導體磊晶結構122a‧‧‧第一型半導體層124a‧‧‧發光層126a‧‧‧第二型半導體層130a、130b、130c、130d‧‧‧反射導電結構層132a、132b、132c、132d‧‧‧透明導電層134a、134b、134c、134d‧‧‧反射層、第一反射層、第一金屬反射層、布拉格反射鏡層136a、136b、136c、136d‧‧‧阻障層、第二反射層、第二金屬反射層140a、140d‧‧‧絕緣層145a、145d‧‧‧電性絕緣層、第二絕緣層150a‧‧‧第一電極160a‧‧‧第二電極170a‧‧‧連接層A‧‧‧虛圓C‧‧‧凹陷區域S1‧‧‧第一半導體區塊S2‧‧‧第二半導體區塊100a, 100b, 100c, 100d ‧‧‧
圖1繪示為本發明的一實施例的一種發光二極體結構的剖面示意圖。 圖2繪示為本發明的另一實施例的一種發光二極體結構的剖面示意圖。 圖3繪示為本發明的另一實施例的一種發光二極體結構的剖面示意圖。 圖4繪示為本發明的另一實施例的一種發光二極體結構的剖面示意圖。FIG. 1 is a schematic cross-sectional view of a light-emitting diode structure according to an embodiment of the invention. 2 is a schematic cross-sectional view of a light-emitting diode structure according to another embodiment of the invention. 3 is a schematic cross-sectional view of a light-emitting diode structure according to another embodiment of the invention. 4 is a schematic cross-sectional view of a light-emitting diode structure according to another embodiment of the invention.
100a‧‧‧發光二極體結構 100a‧‧‧ LED structure
110a‧‧‧基板 110a‧‧‧substrate
112a‧‧‧上表面 112a‧‧‧upper surface
120a‧‧‧半導體磊晶層、半導體磊晶結構 120a‧‧‧Semiconductor epitaxial layer, semiconductor epitaxial structure
122a‧‧‧第一型半導體層 122a‧‧‧Type 1 semiconductor layer
124a‧‧‧發光層 124a‧‧‧luminous layer
126a‧‧‧第二型半導體層 126a‧‧‧Second type semiconductor layer
130a‧‧‧反射導電結構層 130a‧‧‧Reflective conductive structure layer
132a‧‧‧透明導電層 132a‧‧‧Transparent conductive layer
134a‧‧‧反射層、第一反射層、第一金屬反射層、布拉格反射鏡層 134a‧‧‧Reflective layer, first reflective layer, first metal reflective layer, Bragg reflector layer
136a‧‧‧阻障層、第二反射層、第二金屬反射層 136a‧‧‧Barrier layer, second reflective layer, second metal reflective layer
140a‧‧‧絕緣層、第一絕緣層 140a‧‧‧Insulation layer, first insulation layer
145a‧‧‧電性絕緣層、第二絕緣層 145a‧‧‧Electrical insulating layer, second insulating layer
150a‧‧‧第一電極 150a‧‧‧First electrode
160a‧‧‧第二電極 160a‧‧‧Second electrode
170a‧‧‧連接層 170a‧‧‧ connection layer
A‧‧‧虛圓 A‧‧‧Virtual circle
C‧‧‧凹陷區域 C‧‧‧Sag area
S1‧‧‧第一半導體區塊 S1‧‧‧The first semiconductor block
S2‧‧‧第二半導體區塊 S2‧‧‧Second semiconductor block
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107121077A TWI684292B (en) | 2013-07-17 | 2013-07-17 | Light emitting diode structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107121077A TWI684292B (en) | 2013-07-17 | 2013-07-17 | Light emitting diode structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201834264A TW201834264A (en) | 2018-09-16 |
TWI684292B true TWI684292B (en) | 2020-02-01 |
Family
ID=64426320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107121077A TWI684292B (en) | 2013-07-17 | 2013-07-17 | Light emitting diode structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI684292B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201205871A (en) * | 2010-06-25 | 2012-02-01 | Showa Denko Kk | Semiconductor light-emitting element |
US20120049219A1 (en) * | 2010-08-27 | 2012-03-01 | Toyoda Gosei Co., Ltd. | Light emitting element |
TW201327917A (en) * | 2011-10-28 | 2013-07-01 | Lg Innotek Co Ltd | Light emitting device |
-
2013
- 2013-07-17 TW TW107121077A patent/TWI684292B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201205871A (en) * | 2010-06-25 | 2012-02-01 | Showa Denko Kk | Semiconductor light-emitting element |
US20120049219A1 (en) * | 2010-08-27 | 2012-03-01 | Toyoda Gosei Co., Ltd. | Light emitting element |
TW201327917A (en) * | 2011-10-28 | 2013-07-01 | Lg Innotek Co Ltd | Light emitting device |
Also Published As
Publication number | Publication date |
---|---|
TW201834264A (en) | 2018-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10886438B2 (en) | Manufacturing method of light-emitting device | |
US11721791B2 (en) | Light-emitting device with semiconductor stack and reflective layer on semiconductor stack | |
US20210249565A1 (en) | Light-emitting element | |
US9391239B2 (en) | Light emitting diode | |
KR100876737B1 (en) | Semiconductor light emitting device and manufacturing method thereof | |
US11929451B2 (en) | Semiconductor light emitting device | |
TWI527263B (en) | Light emitting diode structure | |
JP2014044971A (en) | Semiconductor light-emitting element | |
US10297718B2 (en) | Light-emitting device | |
US11038085B2 (en) | Light-emitting device with a plurality of electrodes on a semiconductor stack | |
CN108538984B (en) | Light emitting diode structure | |
TWI729641B (en) | Light emitting diode structure | |
TWI684292B (en) | Light emitting diode structure | |
TWI648873B (en) | Light emitting diode structure | |
TWI584497B (en) | Light emitting diode structure | |
US20240038938A1 (en) | Light-emitting structure, manufacturing method thereof, and light-emitting device | |
TW202345419A (en) | Light-emitting device | |
KR20230024121A (en) | Semiconductor light emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |